Light emitting device and method of manufacturing the same

Abstract

The present application relates to a light emitting device and a method for manufacturing a light emitting device. The light emitting device includes a substrate having a light emitting region. A first electrode is located in the light emitting region. A second electrode is located in the light emitting region and is spaced apart from the first electrode. A light emitting element is located between the first electrode and the second electrode. A first contact electrode connects an end of the light emitting element to the first electrode. A second contact electrode connects another end of the light emitting element to the second electrode. The thickness of the first contact electrode is greater than or equal to the thickness of the first electrode and the thickness of the second contact electrode is greater than or equal to the thickness of the second electrode.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2018-0078428 filed on July 5, 2018, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference. Technical Field

[0003] Aspects of embodiments of the present disclosure relate to a light emitting device and a method of manufacturing the light emitting device. Background Art

[0004] Even in adverse environmental conditions, light emitting diodes (hereinafter referred to as LEDs) exhibit relatively satisfactory durability and have excellent performance in terms of life span and brightness. Recently, research on applying such LEDs to various light emitting devices has been actively conducted. As part of such research, there is a technology for manufacturing a tiny rod-type LED as small as a micrometer or nanometer level using an inorganic crystal structure (for example, a structure in which a nitride-based semiconductor is grown).

[0005] In an example, the LED may be manufactured to have a size small enough to constitute a pixel of a self-luminous display panel, etc. In order to manufacture a light-emitting device using such a stick-type LED, a scheme should be provided that enables the stick-type LED to be stably mounted so that even when subsequent processing is performed after the stick-type LED is aligned at a desired position, the stick-type LED is not separated from their aligned position. Summary of the invention

[0006] According to aspects of an embodiment of the present disclosure, a light emitting device capable of enhancing image quality and improving a manufacturing process and a method of manufacturing the light emitting device are provided.

[0007] According to one or more embodiments of the present disclosure, a light-emitting device includes: a substrate including a light-emitting area; a first electrode located in the light-emitting area; a second electrode located in the light-emitting area and spaced apart from the first electrode; a light-emitting element located between the first electrode and the second electrode; a first contact electrode connecting an end of the light-emitting element to the first electrode; and a second contact electrode connecting the other end of the light-emitting element to the second electrode, wherein a thickness of the first contact electrode is greater than or equal to a thickness of the first electrode and a thickness of the second contact electrode is greater than or equal to a thickness of the second electrode.

[0008] The light emitting device may further include wall structures disposed between the substrate and the first electrode and between the substrate and the second electrode, respectively.

[0009] The first electrode and the second electrode may completely cover the wall structure.

[0010] An end portion of the light emitting element may be located on the first electrode, and the other end portion of the light emitting element may be located on the second electrode.

[0011] The light emitting device may further include wall structures respectively arranged on the first electrode and the second electrode.

[0012] The light emitting element may have a cylindrical shape or a polygonal column shape in the micrometer or nanometer scale.

[0013] The first contact electrode and the second contact electrode may be transparent electrodes.

[0014] The light emitting device may further include a protection layer configured to protect the first electrode, the second electrode, the first contact electrode, the second contact electrode, and the light emitting element.

[0015] An end portion of the first electrode may be covered by the first contact electrode, an end portion of the second electrode may be covered by the second contact electrode, and the other ends of the first electrode and the second electrode may be covered by the protective layer.

[0016] An end portion of the light emitting element may be covered by the first contact electrode, and the other end portion of the light emitting element may be covered by the second contact electrode.

[0017] According to one or more embodiments of the present disclosure, a method for manufacturing a light-emitting device includes: forming a first electrode and a second electrode spaced apart from each other in a light-emitting region on a substrate; forming a shadow mask on the first electrode and the second electrode; aligning a light-emitting element between the first electrode and the second electrode; forming a first contact electrode and a second contact electrode by shadow deposition using the shadow mask; and removing the shadow mask.

[0018] The method may further include, before forming the first electrode and the second electrode, forming a wall structure on the substrate. The wall structure may be arranged between the substrate and the first electrode and between the substrate and the second electrode, respectively.

[0019] The first electrode and the second electrode may completely cover the wall structure.

[0020] An end portion of the light emitting element may be located on the first electrode, and the other end portion of the light emitting element may be located on the second electrode.

[0021] The method may further include forming a protection layer configured to protect the first electrode, the second electrode, the first contact electrode, the second contact electrode, and the light emitting element.

[0022] According to one or more embodiments of the present disclosure, a method for manufacturing a light-emitting device includes: forming a first electrode and a second electrode spaced apart from each other in a light-emitting region on a substrate; forming a shadow mask on the first electrode and the second electrode; aligning a light-emitting element between the first electrode and the second electrode; forming a first contact electrode and a second contact electrode by shadow deposition using the shadow mask; and forming a wall structure on the first electrode and the second electrode.

[0023] An end portion of the light emitting element may be located on the first electrode, and the other end portion of the light emitting element may be located on the second electrode.

[0024] The wall structure may be formed by heat shrinking a shadow mask.

[0025] The wall structure may be formed by dissolving the shadow mask.

[0026] The method may further include forming a protection layer configured to protect the wall structure, the first electrode, the second electrode, the first contact electrode, the second contact electrode, and the light emitting element.

[0027] According to aspects of the present disclosure, in a light emitting device and a method of manufacturing the same, a pixel has a symmetrical structure, so that an image with enhanced image quality can be displayed.

[0028] Furthermore, in the light emitting device and the method of manufacturing the light emitting device according to the present disclosure, the manufacturing process can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Some exemplary embodiments will now be described more fully herein with reference to the accompanying drawings; however, the present disclosure may be implemented in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that the present disclosure will be comprehensive and complete and will fully convey the scope of the embodiments to those skilled in the art.

[0030] In the accompanying drawings, the dimensions may be exaggerated for clarity. It should be understood that when an element is referred to as being "between" two elements, the element may be the only element between the two elements, or one or more intervening elements may also be present. Throughout the specification, the same reference numerals refer to the same elements.

[0031] Figure 1 is a schematic diagram showing a light emitting device according to an embodiment of the present disclosure.

[0032] FIG. 2A to FIG. 2C is a circuit diagram showing a pixel according to an embodiment of the present disclosure.

[0033] FIG. 3A to FIG. 3C is a circuit diagram showing a pixel according to an embodiment of the present disclosure.

[0034] FIG. 4A to FIG. 4D is a plan view showing a pixel structure according to an embodiment of the present disclosure.

[0035] Figure 5A and Figure 5B It is shown along Figure 4A 1 is a view of a cross section taken along line I1 - I1 ′ of the pixel structure shown in FIG.

[0036] Fig. 6A and Figure 6B It is shown along Figure 4B A view of a cross section taken along line I2 - I2 ′ of the pixel structure shown in FIG.

[0037] Figure 7 It is shown along Figure 4C A view of a cross section taken along line I3 - I3 ′ of the pixel structure shown in FIG.

[0038] Figure 8 It is shown along Figure 4D A view of a cross section taken along line I4 - I4 ′ of the pixel structure shown in FIG.

[0039] Fig.9A and Fig. 9B is a flowchart illustrating a method of manufacturing a light emitting device according to an embodiment of the present disclosure.

[0040] FIG. 10A to FIG. 10D is a view illustrating a method of manufacturing a light emitting device according to an embodiment of the present disclosure.

[0041] FIG. 11A to FIG. 11E is a view illustrating a method of manufacturing a light emitting device according to an embodiment of the present disclosure.

[0042] Fig.12 is a flowchart illustrating a method of manufacturing a light emitting device according to an embodiment of the present disclosure.

[0043] Fig.13 2 is a view showing a light emitting element according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0044] In the following detailed description, only certain exemplary embodiments of the present disclosure are shown and described by way of example. As will be appreciated by those skilled in the art, the described embodiments may be modified in various ways without departing from the spirit or scope of the present disclosure. Therefore, the drawings and descriptions are considered to be illustrative and not restrictive in nature.

[0045] The same reference numerals always represent the same elements, and a repeated description thereof may not be provided. For clarity, the thickness, proportions and sizes of the elements may be exaggerated in the drawings. As used herein, the term "and / or" includes any and all combinations of one or more of the related listed items.

[0046] It should be understood that although the terms "first", "second", etc. may be used herein to describe one or more elements, these terms should not be interpreted as limiting these elements. These terms are used to distinguish one element from another element. Therefore, without departing from the spirit and scope of the present disclosure, the "first" element may be referred to as the "second" element instead. Similarly, the "second" element may be referred to as the "first" element instead. Unless the context clearly indicates otherwise, the terms in the singular are also intended to include the plural form.

[0047] In addition, for ease of description, spatially relative terms such as "beneath", "below", "lower", "above", "upper", etc. may be used herein to describe the spatial relationship between one element and another element (or elements) as shown in the figure. It should be understood that in addition to the orientation depicted in the figure, the spatially relative terms are also intended to include different orientations of the device in use or operation. For example, if the device in the figure is turned over, the elements described as being "below" or "below" or "below" other elements or features will then be oriented "above" the other elements or features. Therefore, the exemplary terms "below" and "below" can include both above and below orientations. The device can be oriented in other ways (e.g., rotated 90 degrees or in other orientations), and the spatially relative descriptors used herein should be interpreted accordingly.

[0048] It should also be understood that when used in the present disclosure, the terms “includes” and “including” specify the presence of the stated features, integers, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or groups thereof.

[0049] In the specification, when an element is referred to as being "connected" or "coupled" to another element, the element may be directly connected or coupled to the other element, or may be indirectly connected or coupled to the other element with one or more intervening elements interposed therebetween. In addition, for the sake of clarity, some elements that are not necessary for a complete understanding of the present disclosure may be omitted. In addition, throughout the specification, the same reference numerals represent the same elements.

[0050] Figure 1is a schematic diagram showing a light emitting device 100 according to an embodiment of the present disclosure. In some embodiments, although Figure 1 A light emitting display device is shown as an example of a light emitting device using a light emitting element, but the light emitting device 100 according to the present disclosure is not limited thereto. In an example, the light emitting device 100 according to the present disclosure may be another type of light emitting device, such as a lighting device.

[0051] In some embodiments, the light emitting element may be a rod-type light emitting diode (LED).

[0052] refer to Figure 1 , the light emitting device 100 may include a pixel unit 110 , a scan driver 120 , a data driver 130 , and a timing controller 140 .

[0053] The pixel unit 110 may include a plurality of pixels PXL connected to scan lines S1 to Sn and data lines D1 to Dm.

[0054] The data lines D1 to Dm may extend along a first direction DR1 , and the scan lines S1 to Sn may extend along a second direction DR2 different from the first direction DR1 .

[0055] In an embodiment of the present disclosure, each of the pixels PXL may include Fig.13 At least one light emitting element nLED is shown.

[0056] For example, each of the pixels PXL may include at least one first color light emitting element, at least one second color light emitting element and / or at least one third color light emitting element. When a scan signal is supplied to the scan lines S1 to Sn, the light emitting elements included in the pixel PXL may selectively emit light corresponding to the data signal input from the data lines D1 to Dm. In the example, each of the pixels PXL may emit light having a brightness corresponding to the input data signal during each frame period. In an embodiment, the pixel PXL provided with a data signal corresponding to the black brightness does not emit light during the corresponding frame period, so that black can be displayed. In an embodiment, when the pixel unit 110 is an active display panel, in addition to the scan signal and the data signal, the pixel unit 110 may be driven by further being provided with a first pixel power supply and a second pixel power supply.

[0057] The scan driver 120 may be provided with a scan control signal from the timing controller 140 and generate a scan signal corresponding to the scan control signal. The scan signal generated by the scan driver 120 may be provided to the pixel PXL through the scan lines S1 to Sn.

[0058] The data driver 130 may be provided with a data control signal and image data from the timing controller 140, and generates a data signal corresponding to the data control signal and the image data. The data signal generated by the data driver 130 may be output to the data lines D1 to Dm. The data signal output to the data lines D1 to Dm may be input to the pixels PXL on the horizontal pixel line selected by the corresponding scan signal.

[0059] The timing controller 140 may receive various control signals and image data required to drive the pixel unit 110 from an external system (e.g., a system for transmitting image data). The timing controller 140 may reorganize the received image data and transmit the reorganized image data to the data driver 130. In addition, the timing controller 140 may generate a scan control signal and a data control signal required to drive the scan driver 120 and the data driver 130, and transmit the generated scan control signal and the generated data control signal to the corresponding scan driver 120 and the data driver 130.

[0060] Although Figure 1 The pixel unit 110 is shown as a component separate from the timing controller 140, the scan driver 120 and / or the data driver 130, but the present disclosure is not limited thereto. For example, at least one of the scan driver 120 and the data driver 130 may be integrated with the pixel unit 110, or may be mounted on the pixel unit 110. For example, the pixel unit 110 may be a display panel.

[0061] FIG. 2A to FIG. 2C is a circuit diagram showing a pixel PXL according to an embodiment of the present disclosure. Specifically, FIG. 2A to FIG. 2C Pixels having various structures applicable to passive light-emitting display panels are disclosed. For convenience, FIG. 2A to FIG. 2C : shows the j-th (j is a natural number) pixel PXL located on the i-th (i is a natural number) horizontal pixel line.

[0062] In an embodiment, the pixel PXL may emit light of any one of red, green, and blue. However, the present disclosure is not limited thereto. In some embodiments, the pixel PXL may be a pixel that emits light of another color (e.g., white light) in addition to red, green, and blue. The light emitting device 100 may be configured to Figure 1 The pixel unit 110 may overlap with the pixel unit 110, or may include a color filter layer formed integrally with the pixel unit 110.

[0063] refer to Figure 2A , the pixel PXL may include a light emitting element nLED (eg, a rod-type LED) that emits light of a certain color (eg, a predetermined color). For example, the pixel PXL may include a light emitting element nLED that can emit light of any one of red, green, and blue.

[0064] In some embodiments, the pixel PXL may be connected to the scan line Si and the data line Dj. In an example, the first electrode (e.g., the anode electrode) of the pixel PXL may be connected to the scan line Si, and the second electrode (e.g., the cathode electrode) of the pixel PXL may be connected to the data line Dj. When a voltage equal to or greater than the threshold voltage is applied to both ends of the pixel PXL, the pixel PXL may emit light having a brightness corresponding to the magnitude of the applied voltage. That is, the emission of the pixel PXL may be controlled by adjusting the voltage of the scan signal applied to the scan line Si and / or the voltage of the data signal applied to the data line Dj.

[0065] However, the present disclosure is not limited thereto. In some embodiments, the connection directions of the light emitting elements nLED may be set differently.

[0066] refer to Figure 2B In some embodiments, the pixel PXL may include a plurality of light emitting elements nLED connected in parallel. The brightness of the pixel PXL may correspond to the sum of the brightness of the plurality of light emitting elements nLED. When the pixel PXL includes a plurality of light emitting elements nLED, specifically, when the pixel PXL includes a large number of light emitting elements nLED, although a failure may occur in some of the light emitting elements nLED, the failure may prevent or substantially prevent the defect of the pixel PXL from occurring. In some embodiments, the connection direction of the light emitting elements nLED may be set differently.

[0067] refer to Figure 2C In some embodiments, the pixel PXL may include a plurality of light emitting elements nLED connected in different directions.

[0068] In an example, the pixel PXL may include at least one light emitting element nLED having a first electrode (anode electrode) connected to the scan line Si and a second electrode (cathode electrode) connected to the data line Dj, and at least one light emitting element nLED having a first electrode (anode electrode) connected to the data line Dj and a second electrode (cathode electrode) connected to the scan line Si.

[0069] In some embodiments, Figure 2C The pixel PXL may be DC driven or AC driven.

[0070] when Figure 2C When the pixel PXL is DC driven, the light emitting element nLED connected in the forward direction may emit light, and the light emitting element nLED connected in the reverse direction may not emit light.

[0071] In an embodiment, when Figure 2C When the pixel PXL is AC driven, the plurality of light emitting elements nLED connected in the forward direction may emit light according to the direction of the applied voltage. Figure 2C When the pixel PXL is AC driven, Figure 2C The plurality of light emitting elements nLED included in the pixel PXL may emit light alternately according to the direction of an applied voltage.

[0072] FIG. 3A to FIG. 3C is a circuit diagram showing a pixel PXL according to an embodiment of the present disclosure. Specifically, FIG. 3A to FIG. 3C Disclosed are pixels having various structures applicable to active light-emitting display panels. FIG. 3A to FIG. 3C In, with Figures 2A to 2C Similar or identical components are denoted by the same reference numerals, and a detailed description thereof will be omitted.

[0073] refer to Figure 3A , the pixel PXL may include a light emitting element nLED and a pixel circuit PXC connected to the light emitting element nLED.

[0074] A first electrode (eg, an anode electrode) of the light emitting element nLED may be connected to a first pixel power source ELVDD via a pixel circuit PXC, and a second electrode (eg, a cathode electrode) of the light emitting element nLED may be connected to a second pixel power source ELVSS.

[0075] The first pixel power source ELVDD and the second pixel power source ELVSS may have different potentials. In an example, the second pixel power source ELVSS may have a potential lower than the potential of the first pixel power source ELVDD by a threshold voltage of the light emitting element nLED. The light emitting element nLED may emit light having a brightness corresponding to the driving current controlled by the corresponding pixel circuit PXC.

[0076] Although Figure 3A An embodiment in which only one light emitting element nLED is included in the pixel PXL is shown, but the present disclosure is not limited thereto.

[0077] In some embodiments, Figure 3B and Figure 3C As shown in FIG. , the pixel PXL may include a plurality of light emitting elements nLED connected in parallel.

[0078] In some embodiments, the pixel circuit PXC may include a first transistor M1, a second transistor M2, and a storage capacitor Cst. However, the structure of the pixel circuit PXC is not limited to Figure 3A The embodiment shown in FIG.

[0079] The first electrode of the first transistor (switching transistor) M1 may be connected to the data line Dj, and the second electrode of the first transistor M1 may be connected to the first node N1. The first electrode and the second electrode of the first transistor M1 are different electrodes. For example, when the first electrode is a source electrode, the second electrode may be a drain electrode. In addition, the gate electrode of the first transistor M1 may be connected to the scan line Si. When a scan signal having a voltage (e.g., a low voltage) that can turn on the first transistor M1 is provided from the scan line Si, the first transistor M1 may be turned on to connect the data line Dj and the first node N1. The data signal of the corresponding frame is provided to the data line Dj. Therefore, the data signal is transmitted to the first node N1. The data signal transmitted to the first node N1 is charged into the storage capacitor Cst.

[0080] A first electrode of the second transistor (driving transistor) M2 may be connected to the first pixel power source ELVDD, and a second electrode of the second transistor M2 may be connected to the first electrode of the light emitting element nLED. The second transistor M2 controls the amount of driving current provided to the light emitting element nLED, and the amount of driving current corresponds to the voltage of the first node N1.

[0081] One electrode of the storage capacitor Cst may be connected to the first pixel power source ELVDD, and the other electrode of the storage capacitor Cst may be connected to the first node N1. The storage capacitor Cst charges a voltage corresponding to the data signal supplied to the first node N1 and maintains the charged voltage until a data signal of the next frame is supplied.

[0082] For convenience, Figure 3A The pixel PXL having a relatively simple structure is shown, which includes a first transistor M1 for transmitting a data signal to the inside of the pixel PXL, a storage capacitor Cst for storing the data signal, and a second transistor M2 for supplying a driving current corresponding to the data signal to the light emitting element nLED. However, the present disclosure is not limited thereto, and the structure of the pixel circuit PXC may be variously modified and implemented.

[0083] In the example, it will be apparent that the pixel circuit PXC may also include at least one transistor element, such as a transistor element for compensating for the threshold voltage of the second transistor M2, a transistor element for initializing the first node N1 and / or a transistor element for controlling the emission time; or may also include other circuit elements, such as a boost capacitor for boosting the voltage of the first node N1.

[0084] In addition, although FIG. 3A to FIG. 3CIt is shown that all transistors (ie, both the first transistor M1 and the second transistor M2 included in the pixel circuit PXC) are implemented with P-type transistors, but the present disclosure is not limited thereto. That is, at least one of the transistors M1 and M2 included in the pixel circuit PXC may be implemented with an N-type transistor.

[0085] refer to Figure 3B In some embodiments, the pixel PXL may include a plurality of light emitting elements nLED connected in parallel. The brightness of the pixel PXL may correspond to the sum of the brightness of the plurality of light emitting elements nLED. When the pixel PXL includes a plurality of light emitting elements nLED, specifically, when the pixel PXL includes a large number of light emitting elements nLED, although a failure may occur in some of the light emitting elements nLED, the failure may prevent or substantially prevent the defect of the pixel PXL from occurring. In some embodiments, the connection direction of the light emitting elements nLED may be set differently.

[0086] refer to Figure 3C In some embodiments, the pixel PXL may include a plurality of light emitting elements nLED connected in different directions. In this case, the pixel PXL may be DC driven or AC driven. Figure 2C description, and therefore, further detailed description will be omitted.

[0087] FIG. 4A to FIG. 4D is a plan view showing a pixel structure PXS of the light emitting device 100 according to an embodiment of the present disclosure.

[0088] Pixel structure PXS representation FIG. 2A to FIG. 2C The plane layout of the pixel PXL shown in FIG. However, the present disclosure is not limited thereto. Within the scope that can be applied by those skilled in the art, the plane layout of the pixel structure PXS described below can be applied to FIG. 3A to FIG. 3C The pixel PXL is shown in FIG.

[0089] For convenience, FIG. 4A to FIG. 4D 2 shows a case where the light emitting elements nLED are aligned in the horizontal direction, but the alignment direction of the light emitting elements nLED is not limited thereto. For example, at least one light emitting element nLED may be arranged in the diagonal direction between the first electrode PE1 and the second electrode PE2.

[0090] In addition, although FIG. 4A to FIG. 4D , a case where the pixel structure PXS includes six light emitting elements nLED is shown, but the present disclosure is not limited thereto.

[0091] In some embodiments, the number of light emitting elements nLED included in each pixel structure PXS may be variously modified and implemented.

[0092] refer to Figure 4AThe pixel structure PXS may include a first electrode PE1, a second electrode PE2, at least one light emitting element nLED disposed in the light emitting area EA, a first contact electrode CE1, and a second contact electrode CE2.

[0093] The light emitting device 100 according to an embodiment of the present disclosure may be a display device. The light emitting device 100 may include a light emitting display panel having a light emitting area EA corresponding to a pixel PXL.

[0094] The first electrode PE1 and the second electrode PE2 may be disposed to be spaced apart from each other. For example, the first electrode PE1 may be disposed in the emission area EA on the substrate. The second electrode PE2 may be disposed in the emission area EA to be spaced apart from the first electrode PE1.

[0095] At least one light emitting element nLED may be disposed between the first electrode PE1 and the second electrode PE2.

[0096] In some embodiments, Figure 4A As shown in FIG. 1 , at least one light emitting element nLED may be disposed on the same plane as the first electrode PE1 and the second electrode PE2 located on the substrate. At least one light emitting element nLED may be disposed to be spaced apart from the first electrode PE1 and the second electrode PE2.

[0097] The first electrode PE1 and the second electrode PE2 may be implemented with transparent electrodes.

[0098] The first contact electrode CE1 may connect one end of at least one light emitting element nLED to the first electrode PE1. A portion of a front surface (upper surface) of the first electrode PE1 may be covered by the first contact electrode CE1.

[0099] The second contact electrode CE2 may connect the other end of the at least one light emitting element nLED to the second electrode PE2. A portion of a front surface (upper surface) of the second electrode PE2 may be covered by the second contact electrode CE2.

[0100] In some embodiments, the first contact electrode CE1 and the second contact electrode CE2 may include transparent electrodes. For example, the first contact electrode CE1 and the second contact electrode CE2 may include at least one of indium tin oxide (ITO) and indium gallium oxide (IGO) as transparent electrodes. In an embodiment, the light emitting device 100 may be implemented as a bottom emission light emitting display device.

[0101] In some embodiments, the first contact electrode CE1 and the second contact electrode CE2 may include opaque electrodes. For example, the first contact electrode CE1 and the second contact electrode CE2 may include at least one of aluminum, titanium, chromium, indium, gold, and silver. The light emitting device 100 may be implemented as a top emission light emitting display device or a bottom emission light emitting display device.

[0102] For example, the first and second contact electrodes CE1 and CE2 may electrically or physically connect at least one light emitting element nLED with the first and second electrodes PE1 and PE2. The first and second contact electrodes CE1 and CE2 may improve connection stability between the light emitting element nLED and the electrodes PE1 and PE2.

[0103] In some embodiments, the first contact electrode CE1 and the second contact electrode CE2 may have different work functions. Therefore, the contact resistance generated by the first contact electrode CE1 and the second contact electrode CE2 may be minimized or reduced.

[0104] Each of the first contact electrode CE1 and the second contact electrode CE2 may be any one of an n-type contact electrode and a p-type contact electrode. The n-type contact electrode refers to an electrode having a relatively low work function, and the p-type contact electrode refers to an electrode having a relatively high work function. For example, the n-type contact electrode may include any one of aluminum, titanium, chromium, etc., and the p-type contact electrode may include any one of nickel, ITO, etc. The driving current may flow from the n-type contact electrode to the p-type contact electrode via the light emitting element nLED.

[0105] In some embodiments, when the first contact electrode CE1 is an n-type contact electrode, the second contact electrode CE2 may be a p-type contact electrode. In an embodiment, when the second contact electrode CE2 is an n-type contact electrode, the first contact electrode CE1 may be a p-type contact electrode.

[0106] The first electrode PE1 may be connected to the first electrode line and the second electrode PE2 may be connected to the second electrode line to be supplied with power or a signal (eg, predetermined power or signal).

[0107] In some embodiments, FIG. 2A to FIG. 2C The first electrode PE1 of the passive type light emitting display panel shown in FIG. 1 may be connected to the scan line Si supplied with a scan signal, and the second electrode PE2 of the passive type light emitting display panel may be connected to the data line Dj supplied with a data signal.

[0108] In some embodiments, FIG. 3A to FIG. 3C In the active light emitting display panel, at least one of the first electrode PE1 and the second electrode PE2 may be connected to the pixel circuit PXC.

[0109] In an implementation, during the manufacturing process of the light emitting device 100 , in the process of aligning at least one light emitting element nLED, the first electrode PE1 and the second electrode PE2 may be electrically connected to a first shorting bar and a second shorting bar (not shown), respectively.

[0110] The first shorting bar may be commonly connected to one end (first electrode) of the at least one light emitting element nLED, and the second shorting bar may be commonly connected to the other end (second electrode) of the at least one light emitting element nLED.

[0111] However, when at least one light emitting element nLED is independently driven after manufacturing the light emitting device 100, the connection between the first electrode PE1 and the second electrode PE2 of the at least one light emitting element nLED and the first shorting bar and the second shorting bar may be cut off. In an example, the first shorting bar and the second shorting bar may be formed outside the scribing line of the light emitting display panel so that the first electrode PE1 and the second electrode PE2 may be separated from the first shorting bar and the second shorting bar while performing the scribing process.

[0112] refer to Figure 4B The pixel structure PXS may include a first electrode PE1, a second electrode PE2, at least one light emitting element nLED disposed in the light emitting area EA, a first contact electrode CE1, and a second contact electrode CE2.

[0113] To avoid repetition, Figure 4B The following description omits Figure 4A Features that are the same or similar to those described in.

[0114] In some embodiments, Figure 4B As shown in FIG. 1 , at least one light emitting element nLED may be disposed on a plane different from the planes of the first electrode PE1 and the second electrode PE2. One end of the at least one light emitting element nLED may be disposed on the first electrode PE1, and the other end of the at least one light emitting element nLED may be disposed on the second electrode PE2.

[0115] refer to Figure 4C , the pixel structure PXS may include a wall structure WL, a first electrode PE1, a second electrode PE2, at least one light emitting element nLED disposed in the light emitting area EA, a first contact electrode CE1, and a second contact electrode CE2.

[0116] To avoid repetition, Figure 4C The following description omits Figure 4A The content overlaps the content.

[0117] In some embodiments, Figure 4C As shown in FIG. 1 , the wall structure WL may be disposed on the first electrode PE1 and the second electrode PE2 , respectively.

[0118] refer to Figure 4D, the pixel structure PXS may include a wall structure WL, a first electrode PE1, a second electrode PE2, at least one light emitting element nLED disposed in the light emitting area EA, a first contact electrode CE1, and a second contact electrode CE2.

[0119] To avoid repetition, Figure 4D The following description omits Figure 4C The content overlaps the content.

[0120] In some embodiments, Figure 4D As shown in FIG. 1 , at least one light emitting element nLED may be disposed on a plane different from the planes of the first electrode PE1 and the second electrode PE2. One end of the at least one light emitting element nLED may be located on the first electrode PE1, and the other end of the at least one light emitting element nLED may be located on the second electrode PE2.

[0121] Figure 5A and Figure 5B It is shown along Figure 4A 2 is a view of a cross section taken along line I1 - I1 ′ of the pixel structure PXS shown in FIG.

[0122] refer to Figure 5A , the light emitting device 100 according to the embodiment of the present disclosure may include a substrate ST, a first electrode PE1, a second electrode PE2, a light emitting element nLED, a first contact electrode CE1, a second contact electrode CE2, and a protective layer PSV.

[0123] The substrate ST may be an insulating substrate made of, for example, a transparent material. For example, the substrate ST may be a flexible substrate including at least one of polyethersulfone (PES), polyacrylate (PA), polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyarylate (PAR), polyimide (PI), polycarbonate (PC), triacetyl cellulose (TAC), and cellulose acetate propionate (CAP). In an embodiment, the substrate ST may be a rigid substrate including one of glass and tempered glass. In an embodiment, the substrate ST is not necessarily limited to a transparent substrate. In an example, the substrate ST may be an opaque substrate and / or a reflective substrate.

[0124] In some embodiments, the light emitting device 100 may further include a buffer layer (not shown) disposed on the substrate ST.

[0125] The first electrode PE1 and the second electrode PE2 may be disposed on the substrate ST to be spaced apart from each other.

[0126] In some embodiments, Figure 5A and Figure 5BAs shown in FIG. 1 , the first electrode PE1 and the second electrode PE2 may be spaced apart from each other by a distance longer than a length of the light emitting element nLED.

[0127] For example, the first electrode PE1 and the second electrode PE2 may be spaced apart from each other by a predetermined distance.

[0128] The first electrode PE1 and the second electrode PE2 may be formed of at least one of various conductive electrode materials.

[0129] In some embodiments, the first electrode PE1 and the second electrode PE2 may be disposed on the same plane on the substrate ST and may have the same thickness.

[0130] like Figure 5A As shown in FIG. 1 , one end of the first electrode PE1 may be covered by the first contact electrode CE1 , one end of the second electrode PE2 may be covered by the second contact electrode CE2 , and the other ends of the first electrode PE1 and the second electrode PE2 may be covered by the protection layer PSV.

[0131] The light emitting element nLED may be disposed between the first electrode PE1 and the second electrode PE2. For example, the light emitting element nLED may be disposed between the first electrode PE1 and the second electrode PE2 to be spaced apart from the first electrode PE1 and the second electrode PE2 by a certain distance (eg, a predetermined distance).

[0132] In some embodiments, the light emitting element nLED may be directly disposed on the substrate ST. In an embodiment, the first electrode PE1 and the second electrode PE2 may have the same thickness as the light emitting element nLED.

[0133] Reference Fig.13 The light emitting element nLED is described in further detail.

[0134] The first contact electrode CE1 and the second contact electrode CE2 may be disposed on the light emitting element nLED, the first electrode PE1, and the second electrode PE2.

[0135] The first contact electrode CE1 may connect one end of the light emitting element nLED to the first electrode PE1.

[0136] The second contact electrode CE2 may connect the other end of the light emitting element nLED to the second electrode PE2.

[0137] In some embodiments, the first contact electrode CE1 and the second contact electrode CE2 may be disposed on the same plane and may have the same thickness.

[0138] In an implementation, the thickness of the first and second contact electrodes CE1 and CE2 may be greater than or equal to the thickness of the first and second electrodes PE1 and PE2.

[0139] For example, the first contact electrode CE1 may cover one end of the light emitting element nLED and one end of the first electrode PE1. The second contact electrode CE2 may cover the other end of the light emitting element nLED and one end of the second electrode PE2. Therefore, both sides of the light emitting element nLED may be electrically connected to the first electrode PE1 and the second electrode PE2 through the first contact electrode CE1 and the second contact electrode CE2, respectively.

[0140] In some embodiments, the first contact electrode CE1 and the second contact electrode CE2 may be made of a transparent conductive material such as ITO, IZO, or ITZO, so that light emitted from the light emitting element nLED can be transmitted through the first contact electrode CE1 and the second contact electrode CE2. However, the present disclosure is not limited thereto, and the materials constituting the first contact electrode CE1 and the second contact electrode CE2 may be modified differently.

[0141] The protection layer PSV may be a layer for protecting at least one of the first electrode PE1, the second electrode PE2, the light emitting element nLED, the first contact electrode CE1, and the second contact electrode CE2 from external physical impact or chemical influence.

[0142] A protection layer PSV may be disposed over the first electrode PE1, the second electrode PE2, the light emitting element nLED, the first contact electrode CE1, and the second contact electrode CE2.

[0143] Although the protective layer PSV is not described or shown separately in other parts of this specification, Figure 5A The protection layer PSV shown in FIG. 1 , which is provided in the uppermost layer to protect the element, may be applied to other embodiments of the present disclosure.

[0144] refer to Figure 5B , the light emitting device 100 according to the embodiment of the present disclosure may include a substrate ST, a wall structure WL, a first electrode PE1, a second electrode PE2, a light emitting element nLED, a first contact electrode CE1, and a second contact electrode CE2.

[0145] To avoid repetition, Figure 5B The following description omits Figure 5A Features that are the same or similar to those described in.

[0146] and Figure 5A Compared to the light emitting device 100 shown in Figure 5B The light emitting device 100 shown in FIG. 1 may further include a wall structure WL.

[0147] The wall structures WL may be disposed on the substrate ST to be spaced apart from each other.

[0148] For example, the wall structure WL may be disposed between the substrate ST and the first electrode PE1 and between the substrate ST and the second electrode PE2.

[0149] The first electrode PE1 and the second electrode PE2 may be disposed on the wall structure WL and the substrate ST to be spaced apart from each other.

[0150] In some embodiments, the first electrode PE1 and the second electrode PE2 may completely cover the wall structure WL.

[0151] Fig. 6A and Figure 6B It is shown along Figure 4B 2 is a view of a cross section taken along line I2 - I2 ′ of the pixel structure PXS shown in FIG.

[0152] To avoid repetition, Fig. 6A The following description omits Figure 5A Features that are the same or similar to those described in.

[0153] Fig. 6A The position of the light emitting element nLED shown in FIG. Figure 5A The positions in the embodiment shown in FIG. 7 are different.

[0154] refer to Fig. 6A , the light emitting device 100 according to the embodiment of the present disclosure may include a substrate ST, a first electrode PE1, a second electrode PE2, a light emitting element nLED, a first contact electrode CE1, and a second contact electrode CE2.

[0155] The first electrode PE1 and the second electrode PE2 may be disposed on the substrate ST to be spaced apart from each other.

[0156] In some embodiments, Fig. 6A and Figure 6B As shown in FIG. 1 , the first electrode PE1 and the second electrode PE2 may be spaced apart from each other by a distance shorter than a length of the light emitting element nLED.

[0157] For example, the first electrode PE1 and the second electrode PE2 may be spaced apart from each other by such a distance that both ends of the light emitting element nLED may be connected between the first electrode PE1 and the second electrode PE2 while being stably located on the first electrode PE1 and the second electrode PE2 .

[0158] In some embodiments, the first electrode PE1 and the second electrode PE2 may be disposed on the same plane on the substrate ST and may have the same thickness. When the first electrode PE1 and the second electrode PE2 have the same thickness, the light emitting element nLED may be more stably located on the first electrode PE1 and the second electrode PE2.

[0159] In an embodiment, the first electrode PE1 and the second electrode PE2 may be as follows Figure 4B As shown in FIG. , it overlaps with the light-emitting element nLED in a plane.

[0160] The light emitting element nLED may be disposed between the first electrode PE1 and the second electrode PE2. For example, one end of the light emitting element nLED may be disposed on the first electrode PE1, and the other end of the light emitting element nLED may be disposed on the second electrode PE2.

[0161] In some embodiments, the light emitting element nLED may include an insulating film 14 formed on an outer circumferential surface thereof (see Fig.13 ). The insulating film 14 may prevent or substantially prevent the active layer of the light emitting element nLED from being short-circuited with the first and second electrodes PE1 and PE2. However, when the insulating film 14 is located between the light emitting element nLED and the first and second electrodes PE1 and PE2, the electrical connection between the light emitting element nLED and the first and second electrodes PE1 and PE2 may be interrupted.

[0162] Therefore, in some embodiments, the light emitting element nLED can be stably connected to the first electrode PE1 and the second electrode PE2 by removing at least a portion of the insulating film 14 or by additionally forming the first contact electrode CE1 and the second contact electrode CE2. The first contact electrode CE1 and the second contact electrode CE2 can provide a function of physically connecting the light emitting element nLED to the first electrode PE1 and the second electrode PE2.

[0163] In some embodiments, in order to stably fix the light emitting element nLED, a separate adhesive insulator, a fastener, etc. may be provided between the light emitting element nLED and the substrate ST.

[0164] refer to Figure 6B , the light emitting device 100 according to the embodiment of the present disclosure may include a substrate ST, a wall structure WL, a first electrode PE1, a second electrode PE2, a light emitting element nLED, a first contact electrode CE1, and a second contact electrode CE2.

[0165] To avoid repetition, Figure 6B The following description omits Fig. 6A Features that are the same or similar to those described in.

[0166] and Fig. 6A Compared to the light emitting device 100 shown in Figure 6B The light emitting device 100 shown in FIG. 1 may further include a wall structure WL. Figure 6B The position of the light emitting element nLED shown in FIG. Figure 5B The positions in the embodiment shown in FIG. 7 are different.

[0167] The wall structures WL may be disposed on the substrate ST to be spaced apart from each other.

[0168] For example, the wall structure WL may be disposed between the substrate ST and the first electrode PE1 and between the substrate ST and the second electrode PE2.

[0169] The first electrode PE1 and the second electrode PE2 may be disposed on the wall structure WL and the substrate ST to be spaced apart from each other.

[0170] In some embodiments, the first electrode PE1 and the second electrode PE2 may completely cover the wall structure WL.

[0171] Figure 7 It is shown along Figure 4C 0 is a view of a cross section taken along line I3 - I3 ′ of the pixel structure PXS shown in FIG.

[0172] refer to Figure 7 , the light emitting device 100 according to an embodiment of the present disclosure may include a wall structure WL, a substrate ST, a first electrode PE1, a second electrode PE2, a light emitting element nLED, a first contact electrode CE1, a second contact electrode CE2, and a protective layer PSV (not shown).

[0173] To avoid repetition, Figure 7 The following description omits Figure 5A Features that are the same or similar to those described in.

[0174] and Figure 5A Compared to the light emitting device 100 shown in Figure 7 The light emitting device 100 shown in FIG. 1 may further include a wall structure WL. Figure 7 The location of the wall structure WL shown in Figure 5B The positions in the embodiment shown in FIG. 7 are different.

[0175] The wall structures WL may be disposed on the first electrode PE1 and the second electrode PE2 to be spaced apart from each other, respectively.

[0176] For example, the wall structure WL may be disposed on a portion of the first electrode PE1 not covered by the first contact electrode CE1, and on a portion of the second electrode PE2 not covered by the second contact electrode CE2.

[0177] Figure 8 It is shown along Figure 4D 0 is a view of a cross section taken along line I4 - I4 ′ of the pixel structure PXS shown in FIG.

[0178] refer to Figure 8, the light emitting device 100 according to an embodiment of the present disclosure may include a wall structure WL, a substrate ST, a first electrode PE1, a second electrode PE2, a light emitting element nLED, a first contact electrode CE1, a second contact electrode CE2, and a protective layer PSV (not shown).

[0179] To avoid repetition, Figure 8 The following description omits Fig. 6A Features that are the same or similar to those described in.

[0180] and Fig. 6A Compared to the light emitting device 100 shown in Figure 8 The light emitting device 100 shown in FIG. 1 may further include a wall structure WL. Figure 8 The location of the wall structure WL shown in Figure 6B The positions in the embodiment shown in FIG. 7 are different.

[0181] The wall structures WL may be disposed on the first electrode PE1 and the second electrode PE2 to be spaced apart from each other.

[0182] For example, the wall structure WL may be disposed on a portion of the first electrode PE1 not covered by the first contact electrode CE1, and may be disposed on a portion of the second electrode PE2 not covered by the second contact electrode CE2.

[0183] Fig.9A and Fig. 9B is a flowchart illustrating a method of manufacturing a light emitting device according to an embodiment of the present disclosure. FIG. 10A to FIG. 10D is a view illustrating a method of manufacturing a light emitting device according to an embodiment of the present disclosure. FIG. 11A to FIG. 11E is a view illustrating a method of manufacturing a light emitting device according to an embodiment of the present disclosure.

[0184] In this article, we will refer to Figure 4A , Figure 4B , Figure 5A , Fig. 6A , Fig.9A and FIG. 10A to FIG. 10D Describe in more detail Fig.9A A method for manufacturing a light emitting device according to an embodiment of the present disclosure is shown in FIG.

[0185] A first electrode PE1 and a second electrode PE2 spaced apart from each other may be formed in the light emitting area EA on the substrate ST (S110). Fig. 10A As shown in FIG. 1 , the first electrode PE1 and the second electrode PE2 may be directly disposed on the substrate ST.

[0186] A shadow mask PR may be formed on the first electrode PE1 and the second electrode PE2 (S120). The shadow mask PR may refer to a photoresist used in a shadow deposition technique. In this specification, the shadow deposition technique may refer to one of photolithography techniques used in a semiconductor device process.

[0187] like Fig. 10B As shown in (a) and (b) in FIG. , the shadow mask PR may be one of a positive photoresist and a negative photoresist. The shapes of the positive photoresist and the negative photoresist may vary according to the properties of their materials. For example, the positive photoresist may have a width that narrows toward its height direction (e.g., the direction in which the element is deposited on the substrate ST so that its height increases). Conversely, the negative photoresist may have a width that widens toward its height direction.

[0188] The light emitting element nLED may be aligned between the first electrode PE1 and the second electrode PE2 (S130). For example, when a voltage (e.g., a predetermined voltage) is applied to the first electrode PE1 and the second electrode PE2, the light emitting element nLED may be aligned such that one end of the light emitting element nLED faces the first electrode PE1 and the other end of the light emitting element nLED faces the second electrode PE2.

[0189] In an embodiment, if Figure 4A , Figure 5A and Fig. 10C As shown in (a) and (b) of FIG. 1 , the light emitting element nLED may be directly disposed on the substrate ST to be spaced apart from the first electrode PE1 and the second electrode PE2. However, the present disclosure is not limited thereto. Figure 4B and Fig. 6A As shown in , one end of the light emitting element nLED may be disposed on the first electrode PE1, and the other end of the light emitting element nLED may be disposed on the second electrode PE2.

[0190] The first contact electrode CE1 and the second contact electrode CE2 may be formed on the first electrode PE1, the second electrode PE2, and the light emitting element nLED by a shadow deposition technique (S140).

[0191] like Fig. 10D As shown in (a) and (b) of FIG. 1 , when the material constituting the first contact electrode CE1 is ejected in the arrow direction, a partial area is covered by the shadow mask PR disposed on the first electrode PE1. Therefore, the first contact electrode CE1 may be disposed on the first electrode PE1 and the light emitting element nLED.

[0192] Similarly, if Fig. 10DAs shown in (c) and (d), when the material constituting the second contact electrode CE2 is ejected in the arrow direction, the partial area is covered by the shadow mask PR disposed on the second electrode PE2. Therefore, the second contact electrode CE2 may be disposed on the second electrode PE2 and the light emitting element nLED.

[0193] Although Fig. 10D (a) to (d) illustrate sequentially forming the first contact electrode CE1 and the second contact electrode CE2, but the present disclosure is not limited thereto. In some embodiments, the second contact electrode CE2 and the first contact electrode CE1 may be sequentially formed.

[0194] The ejection direction when using positive photoresist may be different from the ejection direction when using negative photoresist. For example, based on the substrate ST, the first ejection angle A1 when using positive photoresist may be greater than the second ejection angle A2 when using negative photoresist.

[0195] The shadow mask PR may be removed (S150). For example, a material deposited on the shadow mask PR may be removed together with the shadow mask PR.

[0196] A protective layer PSV may be formed (S160). Figure 5A As shown in FIG. 1 , a protection layer PSV may be disposed over the first and second electrodes PE1 and PE2 , the first and second contact electrodes CE1 and CE2 , and the light emitting element nLED.

[0197] In this article, we will refer to Figure 4A , Figure 4B , Figure 5B , Figure 6B , Fig. 9B and FIG. 11A to FIG. 11E Describe in more detail Fig. 9B A method for manufacturing a light emitting device according to an embodiment of the present disclosure is shown in FIG.

[0198] To avoid repetition, Fig. 9B The following description is omitted and referenced Fig.9A Describes the same or similar content.

[0199] In addition, for the convenience of description, FIG. 11A to FIG. 11E 2 shows the case where the shadow mask PR is a positive photoresist, but the present disclosure is not limited thereto.

[0200] and Fig.9A Compared with the method shown in Fig. 9B The method shown in may further include a step of forming a wall structure WL ( S100 ).

[0201] Wall structures WL spaced apart from each other may be formed on a substrate ST (S100). Fig.11A As shown in , the wall structures WL may be disposed on the substrate ST to be spaced apart from each other.

[0202] A first electrode PE1 and a second electrode PE2 spaced apart from each other may be formed in the light emitting area EA on the substrate ST (S110). For example, the first electrode PE1 and the second electrode PE2 may be formed to cover the wall structure WL, respectively. Fig. 11B As shown in , the first electrode PE1 and the second electrode PE2 may be directly disposed on the substrate ST and the wall structure WL. In addition, the wall structure WL may be disposed between the substrate ST and the first electrode PE1 and the second electrode PE2, respectively. In an embodiment, the first electrode PE1 and the second electrode PE2 may completely cover the wall structure WL.

[0203] like Fig. 11C As shown in FIG. 1 , a shadow mask PR may be formed on the first electrode PE1 and the second electrode PE2 ( S120 ).

[0204] The light emitting element nLED may be aligned between the first electrode PE1 and the second electrode PE2 ( S130 ).

[0205] In an embodiment, if Figure 4A , Figure 5B and Fig.11D As shown in FIG. 1 , the light emitting element nLED may be directly disposed on the substrate ST to be spaced apart from the first electrode PE1 and the second electrode PE2. However, the present disclosure is not limited thereto. Figure 4B and Figure 6B As shown in , one end of the light emitting element nLED may be disposed on the first electrode PE1, and the other end of the light emitting element nLED may be disposed on the second electrode PE2.

[0206] The first contact electrode CE1 and the second contact electrode CE2 may be formed on the first electrode PE1, the second electrode PE2, and the light emitting element nLED by a shadow deposition technique (S140).

[0207] like Fig.11E As shown in (a), when the material constituting the first contact electrode CE1 is ejected in the arrow direction, a partial area is covered by the shadow mask PR disposed on the first electrode PE1. Therefore, the first contact electrode CE1 may be disposed on the first electrode PE1 and the light emitting element nLED.

[0208] Similarly, if Fig.11E As shown in (b), when the material constituting the second contact electrode CE2 is ejected in the arrow direction, the partial area is covered by the shadow mask PR disposed on the second electrode PE2. Therefore, the second contact electrode CE2 may be disposed on the second electrode PE2 and the light emitting element nLED.

[0209] Although Fig.11E (a) and (b) show that the first contact electrode CE1 and the second contact electrode CE2 are sequentially formed, but the present disclosure is not limited thereto. In some embodiments, the second contact electrode CE2 and the first contact electrode CE1 may be sequentially formed.

[0210] The shadow mask PR may be removed (S150). In addition, the material deposited on the shadow mask PR may be removed together with the shadow mask PR. For example, the first and second electrodes PE1 and PE2, the first and second contact electrodes CE1 and CE2, and the light emitting element nLED may be removed as shown in FIG. Figure 5B Stack as shown in .

[0211] A protective layer PSV (see FIG. 1 ) may be formed on the first and second electrodes PE1 and PE2, the first and second contact electrodes CE1 and CE2, and the light emitting element nLED. Figure 5A )(S160).

[0212] Fig.12 is a flowchart illustrating a method of manufacturing a light emitting device according to an embodiment of the present disclosure.

[0213] In this article, we will refer to Figure 4C , Figure 4D , Figure 7 , Figure 8 and FIG. 10A to FIG. 10D Describe in more detail Fig.12 A method for manufacturing a light emitting device 100 according to an embodiment of the present disclosure is shown in FIG.

[0214] To avoid repetition, Fig.12 The following description omits Fig.9A The same or similar content as described in .

[0215] A first electrode PE1 and a second electrode PE2 spaced apart from each other may be formed in the light emitting area EA on the substrate ST (S210). Fig. 10A As shown in FIG. 1 , the first electrode PE1 and the second electrode PE2 may be directly disposed on the substrate ST.

[0216] A shadow mask PR may be formed on the first electrode PE1 and the second electrode PE2 ( S220 ).

[0217] like Fig. 10B As shown in (a) and (b) of FIG. 1 , the shadow mask PR may be one of a positive photoresist and a negative photoresist.

[0218] The light emitting element nLED may be aligned between the first electrode PE1 and the second electrode PE2 (S230). For example, when a voltage (e.g., a predetermined voltage) is applied to the first electrode PE1 and the second electrode PE2, the light emitting element nLED may be aligned such that one end of the light emitting element nLED faces the first electrode PE1 and the other end of the light emitting element nLED faces the second electrode PE2.

[0219] In an embodiment, if Figure 4C , Figure 7 and Fig. 10C As shown in FIG. 1 , the light emitting element nLED may be directly disposed on the substrate ST to be spaced apart from the first electrode PE1 and the second electrode PE2. However, the present disclosure is not limited thereto. Figure 4D and Figure 8 As shown in , one end of the light emitting element nLED may be disposed on the first electrode PE1, and the other end of the light emitting element nLED may be disposed on the second electrode PE2.

[0220] The first contact electrode CE1 and the second contact electrode CE2 may be formed on the first electrode PE1, the second electrode PE2, and the light emitting element nLED by a shadow deposition technique (S240).

[0221] like Fig. 10D As shown in (a) and (b) of FIG. 1 , when the material constituting the first contact electrode CE1 is ejected in the arrow direction, a partial area is covered by the shadow mask PR disposed on the first electrode PE1. Therefore, the first contact electrode CE1 may be disposed on the first electrode PE1 and the light emitting element nLED.

[0222] Similarly, if Fig. 10D As shown in (c) and (d), when the material constituting the second contact electrode CE2 is ejected in the arrow direction, the partial area is covered by the shadow mask PR disposed on the second electrode PE2. Therefore, the second contact electrode CE2 may be disposed on the second electrode PE2 and the light emitting element nLED.

[0223] A wall structure WL may be formed on the first electrode PE1 and the second electrode PE2 (S250). Figure 7 and Figure 8 As shown in FIG. 1 , the wall structure WL may be disposed on a portion of the first electrode PE1 and a portion of the second electrode PE2 .

[0224] In some embodiments, the wall structure WL may be formed by heat shrinking the shadow mask PR. When heat is applied to the shadow mask PR, the shadow mask PR shrinks. That is, the heat-treated shadow mask PR may be used for the wall structure WL.

[0225] In some embodiments, the wall structure WL may be formed by dissolving the shadow mask PR. The shadow mask PR may be dissolved by a solution. That is, the remaining shadow mask PR that is not dissolved may be used for the wall structure WL.

[0226] A protection layer PSV (see FIG. 1 ) may be formed on the wall structure WL, the first and second electrodes PE1 and PE2, the first and second contact electrodes CE1 and CE2, and the light emitting element nLED. Figure 5A )(S260).

[0227] Fig.13 is a view showing a light emitting element nLED according to an embodiment of the present disclosure.

[0228] Although Fig.13 A cylindrical light emitting element nLED is shown in FIG. 1 , but the present disclosure is not limited thereto.

[0229] refer to Fig.13 The light emitting element nLED includes a first conductive semiconductor layer 11, a second conductive semiconductor layer 13, and an active layer 12 interposed between the first conductive semiconductor layer 11 and the second conductive semiconductor layer 13. In an example, the light emitting element nLED may be implemented using a stacked structure in which the first conductive semiconductor layer 11, the active layer 12, and the second conductive semiconductor layer 13 are sequentially stacked.

[0230] In some embodiments, although Fig.13 , a cylindrical light emitting element nLED is shown, but the shape of the light emitting element nLED may be modified and implemented differently. In an example, the light emitting element nLED may have any of various polygonal column shapes including a rectangular parallelepiped shape, etc. In an embodiment, the light emitting element nLED may have a rod-like shape or a bar-like shape that is long in its length direction (i.e., its aspect ratio is greater than 1).

[0231] In some embodiments, the light emitting element nLED may further include an insulating film 14 .

[0232] Furthermore, in some embodiments, the light emitting element nLED may further include a first electrode and a second electrode.

[0233] The first electrode may be electrically connected to the first conductive semiconductor layer 11 , and the second electrode may be electrically connected to the second conductive semiconductor layer 13 .

[0234] For example, the first electrode may be formed through one surface (eg, Fig.13 The second electrode may be electrically connected to the light emitting element nLED through a surface of the second conductive semiconductor layer 13 not covered by the insulating film 14 (eg, Fig.13The upper surface of the light-emitting element nLED in the embodiment is electrically connected to the light-emitting element nLED.

[0235] In some embodiments, a contact electrode (not shown) may be further included between the first electrode and the first conductive semiconductor layer 11 and / or between the second electrode and the second conductive semiconductor layer 13 .

[0236] Furthermore, in some embodiments, the insulating film 14 may expose at least one region of the side of the first conductive semiconductor layer 11 and / or the second conductive semiconductor layer 13. That is, in the embodiments of the present disclosure, whether the insulating film 14 is included and / or the position of the insulating film 14 is not particularly limited.

[0237] In an embodiment, the light emitting element nLED may be manufactured small enough to have a diameter and / or length of, for example, micrometer or nanometer order. However, the size of the light emitting element nLED according to an embodiment of the present disclosure is not limited thereto, and the size of the light emitting element nLED may be changed to correspond to the required conditions of the light emitting device to which the light emitting element nLED is applied.

[0238] The first conductive semiconductor layer 11 may include, for example, at least one n-type semiconductor layer. For example, the first conductive semiconductor layer 11 may include at least one semiconductor material of InAlGaN, GaN, AlGaN, InGaN, AlN, and InN, and include a semiconductor layer doped with a first conductive dopant such as Si, Ge, or Sn. However, the material constituting the first conductive semiconductor layer 11 is not limited thereto, and the first conductive semiconductor layer 11 may include any one of various materials.

[0239] The active layer 12 is formed on the first conductive semiconductor layer 11 and may be formed as a single quantum well structure or a multi-quantum well structure. In some embodiments, a coating layer (not shown) doped with a conductive dopant may be formed on the top and / or bottom of the active layer 12. In an example, the coating layer may be implemented as an AlGaN layer or an InAlGaN layer. In addition, it will be apparent that materials such as AlGaN or AlInGaN may also be used for the active layer 12. When an electric field having a certain voltage (e.g., a predetermined voltage) or greater is applied to both ends of the light emitting element nLED, the light emitting element nLED emits light as electron-hole pairs recombine in the active layer 12.

[0240] The second conductive semiconductor layer 13 is formed on the active layer 12, and may include a semiconductor layer having a different type from that of the first conductive semiconductor layer 11. In an example, the second conductive semiconductor layer 13 may include at least one p-type semiconductor layer. For example, the second conductive semiconductor layer 13 may include at least one semiconductor material of InAlGaN, GaN, AlGaN, InGaN, AlN, and InN, and include a semiconductor layer doped with a second conductive dopant such as Mg. However, the material constituting the second conductive semiconductor layer 13 is not limited thereto, and any of various materials may be included in the second conductive semiconductor layer 13.

[0241] In some embodiments, the light emitting element nLED may further include another phosphor layer, another active layer, another semiconductor layer, and / or another electrode layer located on the top and / or bottom of each layer in addition to the first conductive semiconductor layer 11, the active layer 12, and the second conductive semiconductor layer 13. In addition, the light emitting element nLED may further include an insulating film 14. However, in some embodiments, the insulating film 14 may be omitted.

[0242] The insulating film 14 is formed to surround at least a portion of the outer circumferential surface of the first conductive semiconductor layer 11, the active layer 12, and / or the second conductive semiconductor layer 13. In an example, the insulating film 14 may be formed to surround at least the outer circumferential surface of the active layer 12. In some embodiments, the insulating film 14 may be formed of a transparent insulating material. For example, the insulating film 14 may include a layer made of SiO 2 、Si 3 N 4 、Al 2 O 3 and TiO 2 At least one insulating material selected from the group consisting of. However, the present invention is not limited thereto.

[0243] When the insulating film 14 is formed, the active layer 12 can be prevented or substantially prevented from being short-circuited with the first electrode (not shown) and / or the second electrode (not shown). In addition, when the insulating film 14 is formed, surface defects of the light-emitting element nLED can be minimized or reduced, thereby improving the life and efficiency of the light-emitting element nLED. In addition, when a plurality of light-emitting elements nLED are densely arranged, the insulating film 14 can prevent or substantially prevent an undesirable short circuit that may occur between the light-emitting elements nLED.

[0244] The light emitting element nLED described above can be used as a light emitting source of any of various display devices. In an example, the light emitting element nLED can be used as a light emitting source of a lighting device or a self-luminous display panel.

[0245] According to aspects, in the light emitting device and the method of manufacturing the same according to the present disclosure, pixels have a symmetrical structure, so that an image with enhanced image quality can be displayed.

[0246] Furthermore, in the light emitting device and the method of manufacturing the light emitting device according to the present disclosure, the manufacturing process can be improved.

[0247] Herein, some exemplary embodiments have been disclosed, and although specific terms are employed, they are used and interpreted in a general and descriptive sense and not for limiting purposes. In some cases, as will be apparent to one of ordinary skill in the art at the time of filing this application, unless otherwise expressly indicated, features, characteristics, and / or elements described in conjunction with a particular embodiment may be used alone or in conjunction with features, characteristics, and / or elements described in conjunction with other embodiments. Therefore, those skilled in the art will understand that various changes in form and detail may be made without departing from the spirit and scope of the present disclosure as set forth in the appended claims.

Claims

1. Light-emitting equipment, including: a substrate including a light emitting region; a first electrode located on the substrate in the light emitting region; a second electrode, located on the substrate in the light emitting region and spaced apart from the first electrode; A light emitting element, located between the first electrode and the second electrode; a first contact electrode, connecting an end of the light emitting element to the first electrode; as well as a second contact electrode, connecting the other end of the light emitting element to the second electrode, wherein the thickness of the first contact electrode is greater than or equal to the thickness of the first electrode and the thickness of the second contact electrode is greater than or equal to the thickness of the second electrode, and Wherein, the light emitting device further includes a wall structure formed on the first electrode and the second electrode respectively on a side opposite to the substrate.

2. The light emitting device according to claim 1, wherein The wall structure includes a material different from a material of the first electrode and the second electrode.

3. The light emitting device according to claim 1, wherein: The end portion of the light emitting element is located on the first electrode, and the other end portion of the light emitting element is located on the second electrode.

4. The light emitting device according to claim 1, wherein: The light emitting element has a cylindrical shape or a polygonal column shape in the micrometer or nanometer scale.

5. The light emitting device according to claim 1, wherein The first contact electrode and the second contact electrode are transparent electrodes.

6. The light emitting device according to claim 1, further comprising: A protection layer is configured to protect the wall structure, the first electrode, the second electrode, the first contact electrode, the second contact electrode, and the light emitting element.

7. The light emitting device according to claim 6, wherein: The end of the first electrode is covered by the first contact electrode, An end portion of the second electrode is covered by the second contact electrode, and The other end portion of the first electrode and the other end portion of the second electrode are covered by the protective layer.

8. The light emitting device according to claim 7, wherein: The end portion of the light emitting element is covered by the first contact electrode, and the other end portion of the light emitting element is covered by the second contact electrode.

9. A method of manufacturing a light emitting device, the method comprising: forming a first electrode and a second electrode spaced apart from each other in a light emitting region on a substrate; forming a shadow mask on the first electrode and the second electrode; aligning a light emitting element between the first electrode and the second electrode; forming a first contact electrode and a second contact electrode by shadow deposition using the shadow mask, wherein the first contact electrode connects an end of the light emitting element to the first electrode, and the second contact electrode connects the other end of the light emitting element to the second electrode; as well as The shadow mask is removed.

10. The method according to claim 9, further comprising: Before forming the first electrode and the second electrode, a wall structure is formed on the substrate, The wall structure is arranged between the substrate and the first electrode and between the substrate and the second electrode respectively.

11. The method according to claim 10, wherein: The first electrode and the second electrode completely cover the wall structure.

12. The method according to claim 9, wherein: An end portion of the light emitting element is located on the first electrode, and the other end portion of the light emitting element is located on the second electrode.

13. The method according to claim 9, further comprising: A protective layer configured to protect the first electrode, the second electrode, the first contact electrode, the second contact electrode, and the light emitting element is formed.

14. A method of manufacturing a light emitting device, the method comprising: forming a first electrode and a second electrode spaced apart from each other in a light emitting region on a substrate; forming a shadow mask on the first electrode and the second electrode; aligning a light emitting element between the first electrode and the second electrode; forming a first contact electrode and a second contact electrode by shadow deposition using the shadow mask, wherein the first contact electrode connects an end of the light emitting element to the first electrode, and the second contact electrode connects the other end of the light emitting element to the second electrode; as well as A wall structure is formed on the first electrode and the second electrode.

15. The method according to claim 14, wherein: The end portion of the light emitting element is located on the first electrode, and the other end portion of the light emitting element is located on the second electrode.

16. The method according to claim 14, wherein: The wall structure is formed by heat shrinking the shadow mask.

17. The method according to claim 14, wherein: The wall structure is formed by dissolving the shadow mask.

18. The method according to claim 14, further comprising: A protection layer configured to protect the wall structure, the first electrode, the second electrode, the first contact electrode, the second contact electrode, and the light emitting element is formed.

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