Organic light emitting diode display device and manufacturing method thereof

Abstract

An organic light emitting diode display device and a manufacturing method thereof are disclosed. The organic light emitting diode display device includes a pixel electrode, a pixel defining layer, an organic emission layer and a counter electrode. The pixel defining layer includes an opening that partially exposes the pixel electrode. The organic emission layer is disposed on the pixel electrode. The organic emission layer is disposed in the opening. The counter electrode is disposed on the organic emission layer. The counter electrode is opposite to the pixel electrode. The pixel defining layer includes a first pixel defining layer and a second pixel defining layer. The first pixel defining layer is disposed on the pixel electrode and includes an inorganic material. The second pixel defining layer is disposed on the first pixel defining layer and includes an organic material. The side wall of the first pixel defining layer closest to the opening is aligned with the side wall of the second pixel defining layer closest to the opening.

Description

[0001] This application claims priority to and the benefit of Korean Patent Application No. 10-2018-0089247, filed on Jul. 31, 2018, which is hereby incorporated by reference for all purposes as if fully set forth herein. Technical Field

[0002] Example embodiments generally relate to an organic light emitting diode display device and a method of manufacturing the organic light emitting diode display device. Background Art

[0003] An organic light emitting diode (OLED) display device is a self-luminous display device. An OLED display device generally includes an organic emission layer interposed between a pixel electrode and a counter electrode. Electrons and holes are injected into the emission layer from two opposing electrodes, respectively. Electrons and holes recombine to generate excitons. When the excitons relax from an excited state to a ground state, light is emitted.

[0004] Typically, in an OLED display device, a pixel defining layer is disposed on and around the edge of each pixel electrode to form a boundary between pixels. A spacer for maintaining a distance between a substrate and an encapsulation layer may be disposed on the pixel defining layer. When the pixel defining layer and the spacer are made of different materials, the number of process steps and masks increases. Therefore, a method is needed that can efficiently and cost-effectively manufacture an OLED display device and has improved productivity.

[0005] The above information disclosed in this section is only for understanding the background of the inventive concept and therefore it may contain information that does not form the prior art. Summary of the invention

[0006] Some exemplary embodiments provide an organic light emitting diode (OLED) display device that can be manufactured with a reduced number of masks and process steps, which can be facilitated by using a transflective mask (e.g., a halftone mask and / or a slit mask).

[0007] Some example embodiments provide a method of manufacturing an OLED display device with a reduced number of masks and process steps, which may be facilitated by using a transflective mask (eg, a halftone mask and / or a slit mask).

[0008] Additional aspects will be set forth in the detailed description which follows, and in part will be obvious from the disclosure, or may be learned by practice of the inventive concepts.

[0009] According to some exemplary embodiments, an OLED display device includes a pixel electrode, a pixel defining layer, an organic emission layer, and a counter electrode. The pixel defining layer includes an opening that partially exposes the pixel electrode. The organic emission layer is disposed on the pixel electrode. The organic emission layer is disposed in the opening. The counter electrode is disposed on the organic emission layer. The counter electrode is opposite to the pixel electrode. The pixel defining layer includes a first pixel defining layer and a second pixel defining layer. The first pixel defining layer is disposed on the pixel electrode and includes an inorganic material. The second pixel defining layer is disposed on the first pixel defining layer and includes an organic material. The side wall of the first pixel defining layer closest to the opening is aligned with the side wall of the second pixel defining layer closest to the opening.

[0010] In some exemplary embodiments, the second pixel defining layer may include a bank and a spacer protruding from the bank in a thickness direction.

[0011] In some exemplary embodiments, the shape of the spacer may be one of a truncated pyramid, a prism, a truncated cone, a cylinder, a hemisphere, and a semi-oblate spheroid.

[0012] In some exemplary embodiments, the first pixel defining layer may be a single-layer structure or a multi-layer structure, and the inorganic material may include silicon oxide (SiO 2 ) layer, silicon nitride (SiN x ) layer and silicon oxynitride (SiO 2 N x ) layer.

[0013] In some exemplary embodiments, the organic material may include at least one of benzocyclobutene, polyimide, polyamide, acrylic resin, and phenol resin.

[0014] In some exemplary embodiments, the OLED display device may further include an encapsulation substrate located on the counter electrode. The encapsulation substrate may include at least one inorganic encapsulation layer and at least one organic encapsulation layer.

[0015] According to some exemplary embodiments, an OLED display device includes a first electrode, a pixel defining layer, an organic emission layer, and a second electrode. The pixel defining layer includes an opening that partially exposes the first electrode. The organic emission layer is disposed on the first electrode. The organic emission layer is disposed in the opening. The second electrode is disposed on the organic emission layer so that the organic emission layer is located between the second electrode and the first electrode. The pixel defining layer includes a first pixel defining layer and a second pixel defining layer. The first pixel defining layer is disposed on the first electrode and includes an inorganic material. The second pixel defining layer is disposed on the first pixel defining layer and includes an organic material. The first pixel defining layer includes a first side wall closest to the opening, and the second pixel defining layer includes a second side wall closest to the opening. The first pixel defining layer includes a first region and a second region. The first region overlaps with the second pixel defining layer in a thickness direction. The second region protrudes from the second side wall of the second pixel defining layer. The second region does not overlap with the second pixel defining layer in a thickness direction. The average thickness of the second region of the first pixel defining layer is less than the average thickness of the first region.

[0016] In some exemplary embodiments, the thickness of the second region of the first pixel defining layer may decrease from a portion aligned with the second sidewall toward the first sidewall.

[0017] In some exemplary embodiments, the first sidewall may overlap the first electrode in the thickness direction, and the second sidewall may not overlap the first electrode in the thickness direction.

[0018] In some exemplary embodiments, the second pixel defining layer may include a bank and a spacer protruding from the bank in a thickness direction.

[0019] In some exemplary embodiments, the bank and the spacer may overlap the first region in the thickness direction.

[0020] In some exemplary embodiments, the second pixel defining layer may further include a third sidewall of the spacer, and the second sidewall may be aligned with the third sidewall.

[0021] In some exemplary embodiments, the OLED display device may further include an encapsulation substrate on the second electrode. The encapsulation substrate may include at least one inorganic encapsulation layer and at least one organic encapsulation layer.

[0022] According to some exemplary embodiments, a method for manufacturing an OLED display device includes the following steps: stacking an inorganic material layer on a substrate having a first electrode formed thereon; forming an organic layer pattern on the inorganic material layer, the organic layer pattern including a first portion having a first thickness, a second portion having a second thickness smaller than the first thickness, and an opening partially exposing the inorganic material layer, the opening partially overlapping the first electrode; and etching the inorganic material layer exposed by the organic layer pattern.

[0023] In some exemplary embodiments, the organic layer pattern may further include a third portion between the second portion and the opening, and the third portion may have an average thickness smaller than the second thickness.

[0024] In some exemplary embodiments, the thickness of the third portion may decrease from a boundary with the second portion toward the opening.

[0025] In some exemplary embodiments, the etching step of the inorganic material layer may be performed by dry etching the inorganic material layer.

[0026] In some exemplary embodiments, the etching step of the inorganic material layer may include etching the organic layer pattern together with the inorganic material layer such that the organic layer pattern is reduced in size.

[0027] In some exemplary embodiments, the organic layer pattern may include at least one of benzocyclobutene, polyimide, polyamide, acrylic resin, and phenol resin.

[0028] In some exemplary embodiments, the step of forming the organic layer pattern may include: disposing a transflective mask on the inorganic material layer, the transflective mask including a transmissive portion, a transflective portion having a transmittance lower than that of the transmissive portion, and a light blocking portion; and performing exposure and development processes using the transflective mask.

[0029] According to various exemplary embodiments, the number of masks and process steps for manufacturing an OLED display device can be reduced, thus improving productivity and reducing manufacturing costs.

[0030] The foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the claimed subject matter. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The accompanying drawings illustrate exemplary embodiments of the inventive concept and together with the description serve to explain the principles of the inventive concept. The accompanying drawings are included to provide a further understanding of the inventive concept and are incorporated in and constitute a part of this specification.

[0032] Figure 1 is a view illustrating an organic light emitting diode (OLED) display device according to some exemplary embodiments.

[0033] Figure 2 According to some exemplary embodiments, Figure 1 A cross-sectional view of the OLED display device taken along section line II'.

[0034] Figure 3 According to some exemplary embodiments Figure 2 Magnified view of area A.

[0035] Figure 4 is a part of an OLED display device according to some exemplary embodiments (eg, Figure 2 An enlarged view of the corresponding portion of area A).

[0036] Figure 5 is a part of an OLED display device according to some exemplary embodiments (eg, Figure 2 An enlarged view of the corresponding portion of area A).

[0037] Figures 6 to 8 are cross-sectional views of an OLED display device at various stages of fabrication according to some exemplary embodiments.

[0038] Fig. 9 and Fig.10 are cross-sectional views of an OLED display device at various stages of fabrication according to some exemplary embodiments.

[0039] Fig.11 is a cross-sectional view of an OLED display device at a manufacturing stage according to some exemplary embodiments. DETAILED DESCRIPTION

[0040] In the following description, for the purpose of explanation, many specific details are set forth to provide a thorough understanding of various exemplary embodiments. However, it is apparent that various exemplary embodiments may be implemented without these specific details or in the presence of one or more equivalent arrangements. In other cases, in order to avoid making various exemplary embodiments unnecessarily obscure, well-known structures and devices are shown in block diagram form. In addition, various exemplary embodiments may be different, but need not be exclusive. For example, without departing from the inventive concept, the specific shape, configuration and characteristics of an exemplary embodiment may be used or implemented in another exemplary embodiment.

[0041] Unless otherwise specified, the illustrated exemplary embodiments will be understood as providing exemplary features of the details of some exemplary embodiments. Therefore, unless otherwise specified, the various illustrated features, components, modules, layers, films, panels, regions, aspects, etc. (hereinafter, individually or collectively referred to as "elements" or "elements") may be further combined, separated, interchanged and / or rearranged without departing from the inventive concept.

[0042] The use of cross hatching and / or shadows is usually provided in the drawings to make the boundaries between adjacent elements clear. Thus, unless otherwise specified, the presence and absence of cross hatching or shadows do not express or indicate any preference or requirement for the specific material, material properties, size, ratio, commonality between the elements shown and / or any other characteristics, attributes, properties, etc. of the elements. In addition, in the drawings, for the purpose of clarity and / or descriptiveness, the size and relative size of the elements can be exaggerated. Thus, the size and relative size of each element are not necessarily limited to the size and relative size shown in the drawings. When the exemplary embodiment can be implemented differently, the specific process sequence can be performed differently from the described order. For example, two processes described in succession can be performed substantially simultaneously or in an order opposite to the described order. In addition, the same reference numerals represent the same elements.

[0043] When an element is referred to as "on" another element, "connected to" or "coupled to" another element, the element may be directly on the other element, directly connected to or directly coupled to the other element, or there may be an intermediate element. However, when an element is referred to as "directly on" another element, "directly connected to" or "directly coupled to" another element, there is no intermediate element. Other terms and / or phrases used to describe the relationship between elements should be interpreted in a similar manner, for example, "between..." and "directly between...", "adjacent" and "directly adjacent", "on..." and "directly on...", etc. In addition, the term "connection" may refer to physical connection, electrical connection and / or fluid connection. In addition, the D1 axis, the D2 axis and the D3 axis are not limited to the three axes of the rectangular coordinate system, and may be interpreted in a wider sense. For example, the D1 axis, the D2 axis and the D3 axis may be perpendicular to each other, or may represent different directions that are not perpendicular to each other. For the purpose of this disclosure, "at least one of X, Y, and Z" and "at least one selected from the group consisting of X, Y, and Z" may be understood as any combination of only X, only Y, only Z, or two or more of X, Y, and Z, such as, for example, XYZ, XYY, YZ, and ZZ. As used herein, the term "and / or" includes any and all combinations of one or more of the relevant listed items.

[0044] Although the terms "first", "second", etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another element. Therefore, the first element discussed below may be named as the second element without departing from the disclosed teachings.

[0045] For descriptive purposes, spatially relative terms such as "under," "below," "under," "down," "above," "up," "above," "higher," "side" (e.g., as in "sidewall"), etc., may be used herein to describe the relationship of one element to another (other) element as shown in the accompanying drawings. Spatially relative terms are intended to include different orientations of the device in use, operation, and / or manufacture in addition to the orientation depicted in the accompanying drawings. For example, if the device in the accompanying drawings is turned over, an element described as "under" or "beneath" other elements or features will subsequently be positioned as "above" the other elements or features. Thus, the exemplary term "under" can include both above and below orientations. In addition, the device can be positioned otherwise (e.g., rotated 90 degrees or at other orientations), and as such, the spatially relative descriptors used herein are interpreted accordingly.

[0046] The terms used herein are for the purpose of describing specific embodiments, and are not intended to be limited. As used herein, unless the context clearly indicates otherwise, the singular forms "one", "one (kind / person)" and "said (the)" are also intended to include plural forms. In addition, when the terms "comprise" and / or "include" and their variations are used in this specification, the stated features, integral bodies, steps, operations, elements, components and / or their groups are indicated, but the presence or addition of one or more other features, integral bodies, steps, operations, elements, components and / or their groups are not excluded. It should also be noted that, as used herein, the terms "substantially", "approximately" and other similar terms are used as approximate terms rather than as terms of degree, so that they are used to explain the inherent deviations of measured values, calculated values ​​and / or provided values ​​that will be recognized by those of ordinary skill in the art.

[0047] Various exemplary embodiments are described herein with reference to cross-sectional views, isometric views, perspective views, plan views, and / or exploded views that are schematic diagrams of idealized exemplary embodiments and / or intermediate structures. As such, variations in the shapes of the illustrations, such as those caused by manufacturing techniques and / or tolerances, are expected to occur. Therefore, the exemplary embodiments disclosed herein should not be construed as being limited to the shapes of the specifically illustrated regions, but rather will include deviations in shape caused by, for example, manufacturing. To this end, the regions illustrated in the drawings may be schematic in nature, and the shapes of these regions may not reflect the actual shapes of the regions of the device, and as such, no limitation is intended.

[0048] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art to which this disclosure is a part. Terms (such as those defined in general dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and will not be interpreted in an ideal or overly formal sense unless expressly so defined herein.

[0049] As is customary in the art, some exemplary embodiments are described and shown in the accompanying drawings with functional blocks, units and / or modules. It will be appreciated by those skilled in the art that these functional blocks, units and / or modules are physically implemented by electronic (or optical) circuits such as logic circuits, discrete components, microprocessors, hard-wired circuits, storage elements, wiring connections, etc., which can be formed using semiconductor-based manufacturing techniques or other manufacturing techniques. In the case where the functional blocks, units and / or modules are implemented by microprocessors or other similar hardware, they can be programmed and controlled using software (e.g., microcode) to perform the various functions discussed herein, and they can be optionally driven by firmware and / or software. It is also contemplated that each functional block, unit and / or module can be implemented by dedicated hardware, or as a combination of dedicated hardware that performs certain functions and processors that perform other functions (e.g., one or more programmed microprocessors and related circuits). In addition, without departing from the inventive concept, each functional block, unit and / or module of some exemplary embodiments can be physically separated into two or more interactive and discrete functional blocks, units and / or modules. Furthermore, the functional blocks, units and / or modules of some exemplary embodiments may be physically combined into more complex functional blocks, units and / or modules without departing from the inventive concept.

[0050] Hereinafter, various exemplary embodiments will be explained in detail with reference to the accompanying drawings.

[0051] Figure 1 is a view illustrating an organic light emitting diode (OLED) display device according to some exemplary embodiments.

[0052] Reference Figure 1 , the OLED display device 1 may include a display area DA and a non-display area NDA. The display area DA may be disposed in a central portion of the OLED display device 1, but exemplary embodiments are not limited thereto. The display area DA may include a plurality of pixels PX. Each pixel PX may emit light of a specific color. In some exemplary embodiments, the pixel PX may include a red pixel, a green pixel, and a blue pixel; however, pixels of any suitable color may be used in conjunction with exemplary embodiments.

[0053] The non-display area NDA may be disposed outside (eg, around) the display area DA. The non-display area NDA may include a driver unit (not shown). The driver unit may provide electrical signals (such as data signals and / or scan signals) to components (such as pixels PX) of the display area DA.

[0054] Figure 2 According to some exemplary embodiments, Figure 1 A cross-sectional view of the OLED display device taken along section line II'. Figure 3 According to some exemplary embodiments Figure 2 Magnified view of area A.

[0055] Reference Figure 2 and Figure 3 , the OLED display device 1 may include: a substrate 100 including a pixel region and a transistor region; a buffer layer 110 disposed on the substrate 100; a semiconductor layer ACT disposed on (e.g., above) the buffer layer 110 in the transistor region; a gate electrode GAT insulated from the semiconductor layer ACT; a gate insulating layer 120 insulating the semiconductor layer ACT from the gate electrode GAT; an interlayer dielectric layer 130 disposed on (e.g., above) the gate electrode GAT; a source / drain electrode SD insulated from the gate electrode GAT and electrically connected to the semiconductor layer ACT through a contact hole CNT1; a planarization layer 150 disposed on (e.g., above) the source / drain electrode SD; a first (e.g., pixel) electrode PE disposed on the planarization layer 150 and electrically connected to the source / drain electrode SD; and a first pixel defining layer PDL1 formed on (e.g., above) the first electrode PE and having an opening OP for exposing a portion of the first electrode PE to the outside to define the pixel region. For convenience of explanation, those components disposed between and including the planarization layer 150 and the substrate 100 are shown in FIG. Figure 3 Shown in FIG. 1 is a base structure 101 .

[0056] The substrate 100 may be made mainly of silicon dioxide (SiO 2 ) is made of a transparent glass material composed of. The substrate 100 is not necessarily limited to the aforementioned materials, but may be formed of a transparent plastic material. The plastic material used for the substrate 100 may be an insulating organic material. The plastic material may be an organic material selected from the group consisting of polyethersulfone (PES), polyacrylate (PAR), polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyallylate, polyimide, polycarbonate (PC), cellulose triacetate (TAC) and cellulose acetate propionate (CAP). It is also contemplated that one or more of the aforementioned materials may be used in conjunction with the exemplary embodiments.

[0057] When the OLED display device 1 is a bottom-emitting display device in which light is emitted through the substrate 100, the substrate 100 is formed of a transparent material. On the other hand, when the OLED display device 1 is a top-emitting display device in which light is emitted upward (such as away from the substrate 100), the substrate 100 may not necessarily be formed of a transparent material. For example, the substrate 100 may be made of a metal. When the substrate 100 is made of a metal, the metal may include, but is not limited to, one selected from the group consisting of iron, chromium, manganese, nickel, titanium, molybdenum, and stainless steel (SUS), or one or more of the foregoing materials. It is also contemplated that the substrate 100 may include carbon. The substrate 100 may be made of a metal foil.

[0058] A buffer layer 110 may also be formed on the substrate 100 to provide a flat and smooth surface and block impurity penetration. The buffer layer 110 may be silicon oxide (SiO x ) film, silicon nitride (SiN x ) film or silicon oxynitride (SiO 2 N x ) film or a multilayer thereof.

[0059] The semiconductor layer ACT is formed on the buffer layer 110. The semiconductor layer ACT may be made of silicon (Si) (e.g., amorphous silicon (a-Si)), or may be made of polycrystalline silicon (p-Si). In addition, the semiconductor layer ACT may be made of germanium (Ge), gallium phosphorus (GaP), gallium arsenide (GaAs), aluminum arsenic (AlAs), etc., but is not limited thereto. In addition, the semiconductor layer ACT may be a silicon semiconductor layer formed by diffusing n-type impurities into a silicon-on-insulator (SOI) substrate at, for example, a low concentration. In addition, the semiconductor layer ACT may be formed by doping a portion of amorphous silicon with p-type impurities or n-type impurities.

[0060] A gate insulating layer 120 that covers the semiconductor layer ACT and insulates the semiconductor layer ACT from the gate electrode GAT is disposed on the semiconductor layer ACT. Similar to the buffer layer 110, the gate insulating layer 120 may be silicon oxide (SiO 2 ) layer, silicon nitride (SiN x ) layer, silicon oxynitride (SiO 2 N x The gate insulating layer 120 may be formed of the same material as that of the buffer layer 110 or a material different from that of the buffer layer 110 .

[0061] The gate electrode GAT is formed on the gate insulating layer 120. The gate electrode GAT can apply a gate signal to control the emission of the pixel PX. The gate electrode GAT can be a single layer of aluminum (Al) or an aluminum alloy such as chromium-aluminum (Cr-Al), molybdenum-aluminum (Mo-Al), and aluminum-neodymium (Al-Nd), or can be composed of a multilayer of an aluminum alloy stacked on a chromium (Cr) or molybdenum (Mo) alloy. However, it is contemplated that any other suitable conductive material can be used.

[0062] The interlayer dielectric layer 130 is formed over the gate electrode GAT. The interlayer dielectric layer 130 electrically insulates the gate electrode GAT from the source / drain electrodes SD and may be made of silicon oxide (SiO 2 ) layer, silicon nitride (SiN x ) layer, silicon oxynitride (SiO 2 N x ) layer or multiple layers thereof, similar to the buffer layer 110.

[0063] A source / drain electrode SD electrically connected to the semiconductor layer ACT is formed on the interlayer dielectric layer 130. The source / drain electrode SD may be formed of at least one of molybdenum (Mo), chromium (Cr), tungsten (W), molybdenum-tungsten (MoW), aluminum (Al), aluminum-neodymium (Al-Nd), titanium (Ti), titanium nitride (TiN), copper (Cu), molybdenum alloy (Mo alloy), and copper alloy (Cu alloy). The source / drain electrode SD is electrically connected through the semiconductor layer ACT to apply a voltage to the first electrode PE.

[0064] An additional insulating layer 140 may be further disposed over the source / drain electrodes SD. A planarization layer 150 may be disposed on the additional insulating layer 140 to provide a flat surface. An organic acrylic material may be used as a material of the planarization layer 150; however, exemplary embodiments are not limited thereto.

[0065] The first electrode PE may be disposed on the planarization layer 150 and may be electrically connected to the source / drain electrode SD. The first electrode PE may be connected to the source / drain electrode SD via a contact hole CNT2 formed through the additional insulating layer 140 and the planarization layer 150. Therefore, a driving voltage may be applied from the source / drain electrode SD to the first electrode PE.

[0066] The first electrode PE may be made of a transparent conductive material. For example, the transparent conductive material may include at least one of indium tin oxide (ITO), indium zinc oxide (IZO), carbon nanotubes, conductive polymers, and nanowires. That is, the first electrode PE may be formed of a mixture of more than one transparent conductive material.

[0067] The first pixel defining layer PDL1 defining the pixel area may be formed on the first electrode PE. The first pixel defining layer PDL1 may be formed on the entire (or substantially the entire) surface of the substrate 100 to cover the planarization layer 150. The first pixel defining layer PDL1 has an opening OP for exposing a portion of the first electrode PE to the outside to define the pixel area. For example, the first pixel defining layer PDL1 may overlap with some areas including the edge of the first electrode PE in the thickness direction (for example, in a direction perpendicular to the upper surface of the substrate 100). The first pixel defining layer PDL1 may be made of an inorganic material, such as silicon oxide (SiO 2 ) layer, silicon nitride (SiN x ) layer, silicon oxynitride (SiO 2 N x ) layer or multiple layers thereof.

[0068] As described above, since the planarization layer 150 is formed of an organic material, outgassing may occur during a subsequent manufacturing process such as a sintering process. Outgassing may oxidize the first intermediate layer for transmitting electrons, which will be described later. As a result, the pixel area may be reduced or otherwise damaged. In other words, the life of the OLED display device 1 may be shortened. According to some exemplary embodiments, when the first pixel defining layer PDL1 is formed of an inorganic material disposed on the planarization layer 150, outgassing can be prevented from being discharged to the outside of the planarization layer 150. Therefore, the reliability, optical characteristics, and life deviation of the OLED display device 1 may be improved.

[0069] The OLED display device 1 may further include an organic emission layer ED on the first electrode PE in the pixel region, a second (eg, counter) electrode CE on the organic emission layer ED, and an encapsulation substrate (or structure) TFE.

[0070] The first electrode PE may be an anode electrode or a cathode electrode of the organic emission layer ED. In the following description, it is assumed that the first electrode PE is an anode electrode and the second electrode CE is a cathode electrode. However, it will be understood that the first electrode PE may be a cathode electrode and the second electrode CE may be an anode electrode.

[0071] The first electrode PE used as an anode electrode may be made of a conductive material having a high work function. When the OLED display device 1 is a bottom emission display device, the first electrode PE may be made of a conductive material such as ITO, IZO, zinc oxide (ZnO), and indium (III) oxide (In 2 O 3) or a stack thereof. When the OLED display device 1 is a top emission display device, the first electrode PE may further include a reflective layer, and the reflective layer is made of a material such as silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li) and calcium (Ca), or an alloy including at least one of the foregoing materials.

[0072] Although not shown in the drawings, a first intermediate layer may be formed on the first electrode PE exposed via the opening OP of the first pixel defining layer PDL1. The first intermediate layer may facilitate the injection or transport of electrons or holes between the first electrode PE and the second electrode CE. When the first electrode PE is an anode electrode, the first intermediate layer may be a layer related to the injection or transport of holes. For example, the first intermediate layer may include only a hole injection layer or a hole transport layer, or may include a stack of a hole injection layer and a hole transport layer.

[0073] The hole injection layer may be formed of, for example, a phthalocyanine (Pc) compound such as copper phthalocyanine (CuPc) or tris(4-carbazol-9-ylphenyl)amine (TCTA), 4,4',4"-tris[(3-methylphenyl)phenylamino]triphenylamine (m-MTDATA), and 1,3,5-tris[4-(3-methylphenylphenylamino)phenyl]benzene (m-MTDAPB) as a starburst amine. However, exemplary embodiments are not limited to these materials.

[0074] The hole transport layer may be formed of at least one selected from the group consisting of N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1-biphenyl]-4,4'-diamine (TPD) and N,N'-di(naphthalene-1-yl)-N,N'-diphenylbenzidine (α-NPD). However, exemplary embodiments are not limited to these materials.

[0075] The organic emission layer ED may be disposed on the first intermediate layer. The organic emission layer ED may be disposed to overlap the first electrode PE within the opening OP of the first pixel defining layer PDL1. The upper surface of the organic emission layer ED may be positioned lower than the upper surface of the first pixel defining layer PDL1. That is, the upper surface of the first pixel defining layer PDL1 may protrude upward from the organic emission layer ED, or in other words, the upper surface of the first pixel defining layer PDL1 may be farther away from the substrate 100 than the upper surface of the organic emission layer ED.

[0076] The organic emission layer ED may be formed of a polymer organic material or a small molecule organic material emitting one of red, green, and blue light, or may be formed of a mixture of polymer / small molecule organic materials.

[0077] In some exemplary embodiments, the organic emission layer ED may include a host material and a dopant material. Examples of the host material include, but are not limited to, tris(8-hydroxyquinoline)aluminum (Alq 3 ); 9,10-di(naphthalene-2-yl)anthracene (ADN); 3-tert-butyl-9,10-di(naphthalene-2-yl)anthracene (TBADN); 4,4'-bis(2,2-diphenyl-vinyl-1-yl)-4,4'-dimethylbenzene (DPVBi); 4,4'-bis(2,2-diphenyl-vinyl-1-yl)-4,4'-dimethylbenzene (p-DMDPVBi); tri(9 ,9-diarylfluorene)(TDAF); 2-(9,9'-spirobifluorene-2-yl)-9,9'-spirobifluorene (BSDF); 2,7-bis(9,9'-spirobifluorene-2-yl)-9,9'-spirobifluorene (TSDF); bis(9,9-diarylfluorene)(BDAF); 4,4'-bis(2,2-diphenyl-vinyl-1-yl)-4,4'-di-(tert-butyl)benzene (p -TDPVBi); 1,3-bis(carbazol-9-yl)benzene (mCP); 1,3,5-tri(carbazol-9-yl)benzene (TCP); 4,4',4"-tri(carbazol-9-yl)triphenylamine (TCTA); 4,4'-bis(carbazol-9-yl)biphenyl (CBP); 4,4'-bis(9-carbazolyl)-2,2'-dimethyl-biphenyl (CBDP); 4,4'-bis(carbazol-9-yl)-2,2'-dimethyl-biphenyl (CBDP); (Carbazole-9-yl)-9,9-dimethyl-fluorene (DMFL-CBP); 4,4'-bis(carbazole-9-yl)-9,9-bis(9-phenyl-9H-carbazole)fluorene (FL-4CBP); 4,4'-bis(carbazole-9-yl)-9,9-di-tolyl-fluorene (DPFL-CBP); 9,9-bis(9-phenyl-9H-carbazole)fluorene (FL-2CBP), etc.

[0078] Examples of dopant materials include, but are not limited to, 4,4′-bis[4-(di-p-tolylamino)phenylvinyl]biphenyl (DPAVBi), 9,10-di(naphthalene-2-yl)anthracene (ADN), 3-tert-butyl-9,10-di(naphthalene-2-yl)anthracene (TBADN), and the like.

[0079] The second pixel defining layer PDL2 may be disposed on an upper surface of the first pixel defining layer PDL1. The second pixel defining layer PDL2 may overlap the first pixel defining layer PDL1. That is, some regions including the edge of the pixel electrode PE, the first pixel defining layer PDL1, and the second pixel defining layer PDL2 may overlap each other in the thickness direction. The second pixel defining layer PDL2 is not formed in the opening OP of the first pixel defining layer PDL1, so the organic emission layer ED is not covered by the second pixel defining layer PDL2 but is exposed.

[0080] The sidewall of the first pixel defining layer PDL1 closer to the opening OP may be aligned with the sidewall of the second pixel defining layer PDL2 closer to the opening OP. The thickness PH1 of the first pixel defining layer PDL1 may be constant. The second pixel defining layer PDL2 may include: a bank BK; and a spacer SPC protruding from the bank BK in a thickness direction.

[0081] The second pixel defining layer PDL2 may be made of at least one organic material selected from the group consisting of benzocyclobutene (BCB), polyimide (PI), polyamide (PA), acrylic resin, and phenol resin.

[0082] The bank BK and the spacer SPC of the second pixel defining layer PDL2 may be integrally formed by a photolithography process using a photosensitive material. In other words, the bank BK and the spacer SPC of the second pixel defining layer PDL2 may be made of the same material as each other.

[0083] For example, by adjusting the amount of light via a transflective exposure process using, for example, a halftone mask or a slit mask, the embankment BK and the spacer SPC of the second pixel defining layer PDL2 can be formed together. However, it will be understood that the exemplary embodiments are not limited thereto. The embankment BK and the spacer SPC of the second pixel defining layer PDL2 may be formed sequentially or separately, and may be made of different materials from each other. The spacer SPC is formed on the interval between adjacent pixel electrodes PE, and may have the shape of a truncated pyramid, a prism, a truncated cone, a cylinder, a hemisphere, and a semi-oblate spheroid.

[0084] Although not shown in the drawings, the second intermediate layer may be formed on the exposed organic emission layer ED. The second intermediate layer may facilitate the injection or transport of electrons or holes between the first electrode PE and the second electrode CE. When the second electrode CE is a cathode electrode, the second intermediate layer may be a layer related to the injection or transport of electrons. For example, the second intermediate layer may include only an electron injection layer or an electron transport layer, or may include a stack of an electron injection layer and an electron transport layer.

[0085] The electron transport layer can be made of Alq 3 The electron injection layer can be made of materials such as lithium fluoride (LiF), sodium chloride (NaCl), cesium fluoride (CsF), lithium oxide (Li 2 O), barium oxide (BaO) and 8-hydroxyquinoline lithium (Liq).

[0086] The second electrode CE is formed on the second pixel defining layer PDL2. When the second electrode CE is used as a cathode electrode, it may be made of a conductive material having a low work function. The second electrode CE may be formed of Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, or Ca, or an alloy including at least one of the foregoing materials.

[0087] The encapsulation substrate TFE may be disposed on the second electrode CE. The encapsulation substrate TFE encapsulates the organic emission layer ED to prevent impurities (such as moisture and air) from penetrating from the outside of the OLED display device 1 and damaging or deforming the organic emission layer ED. In some exemplary embodiments, the encapsulation substrate TFE may be a thin encapsulation layer, which includes one or more inorganic encapsulation layers 161 and 163 and one or more organic encapsulation layers 162. The inorganic encapsulation layers 161 and 163 and the organic encapsulation layer 162 may be alternately disposed. For example, the encapsulation substrate TFE may include: a first inorganic encapsulation layer 161, disposed on the second electrode CE; an organic encapsulation layer 162, disposed on the first inorganic encapsulation layer 161; and a second inorganic encapsulation layer 163, disposed on the organic encapsulation layer 162. Although Figure 2 An encapsulation substrate TFE composed of three layers is shown, but this is illustrative only. In some exemplary embodiments, the encapsulation substrate TFE may further include a siloxane-based encapsulant layer, such as hexamethyldisiloxane (HMDSO).

[0088] In the following description, like reference numerals may denote features similar to those described in the above exemplary embodiment. In addition, redundant descriptions will be omitted, and the description will be focused on the differences from those previously described elements.

[0089] Figure 4 is a part of an OLED display device according to some exemplary embodiments (eg, Figure 2 An enlarged view of the corresponding part of area A).

[0090] Figure 4 The OLED display device 2 shown in FIG. Figure 2 and Figure 3The OLED display device 1 is different in that the side wall of the bank BK_1 closer to the opening OP_1 is not aligned with the side wall of the first pixel defining layer PDL1_1 closer to the opening OP_1. For example, the OLED display device 2 may include: a first electrode PE; a pixel defining layer PDL_1 defining an opening OP_1 for partially exposing the first electrode PE; an organic emission layer ED disposed on the first electrode PE in the opening OP_1 of the pixel defining layer PDL_1; and a second electrode CE_1 disposed on the organic emission layer ED. In addition, the OLED display device 2 may further include an encapsulation substrate (or structure) TFE_1 disposed on the second electrode CE_1.

[0091] The pixel defining layer PDL_1 may include: a first pixel defining layer PDL1_1 disposed on the first electrode PE and including an inorganic material; and a second pixel defining layer PDL2_1 disposed on the first pixel defining layer PDL1_1 and including an organic material. The first pixel defining layer PDL1_1 may include a first sidewall closer to the opening OP_1, and the second pixel defining layer PDL2_1 may include a second sidewall closer to the opening OP_1. That is, the first sidewall may overlap with the first electrode PE in the thickness direction, and the second sidewall may not overlap with the first electrode PE.

[0092] The first pixel defining layer PDL1_1 may include: a first area PA1, overlapping the second pixel defining layer PDL2_1 in the thickness direction; and a second area PA2, protruding from the second sidewall of the second pixel defining layer PDL2_1 and not overlapping the second pixel defining layer PDL2_1 in the thickness direction. The average thickness PH2_1 of the second area PA2 of the first pixel defining layer PDL1_1 may be less than the average thickness PH2 of the first area PA1. That is, the thickness of the second area PA2 of the first pixel defining layer PDL1_1 may decrease from the portion aligned with the second sidewall toward the first sidewall. According to the method of manufacturing an OLED display device to be described later, during, for example, a dry etching process, the second area PA2 of the first pixel defining layer PDL1_1 may be exposed for a longer time from the portion aligned with the second sidewall toward the first sidewall.

[0093] In addition, the height BH2 of the bank BK_1 of the second pixel defining layer PDL2_1 and the height SH2 of the spacer SPC_1 may be less than Figure 3 1 and 2. The height BH1 of the bank BK and the height SH1 of the spacer SPC are shown in FIG. According to the method of manufacturing the OLED display device to be described later, during, for example, a dry etching process, the upper surface of the bank BK_1 of the second pixel defining layer PDL2_1 and the upper surface of the spacer SPC_1 may be respectively greater than 1. Figure 3The upper surface of the bank BK and the upper surface of the spacer SPC shown in FIG. 5 are exposed for a longer time.

[0094] Figure 5 is a part of an OLED display device according to some exemplary embodiments (eg, Figure 2 An enlarged view of the corresponding portion of area A).

[0095] Reference Figure 5 , the bank BK_2 of the second pixel defining layer PDL2_2 of the pixel defining layer PDL_2 is combined with Figure 4 The difference described in is that the bank BK_2 is only provided in the region overlapping with the spacer SPC_2 in the thickness direction. For example, the OLED display device 3 may include: a first electrode PE; a pixel defining layer PDL_2 defining an opening OP_2 for partially exposing the first electrode PE; an organic emission layer ED provided on the first electrode PE in the opening OP_2 of the pixel defining layer PDL_2; and a second electrode CE_2 provided on the organic emission layer ED. In addition, the OLED display device 3 may further include an encapsulation substrate (or structure) TFE_2 provided on the second electrode CE_2.

[0096] The pixel defining layer PDL_2 may include: a first pixel defining layer PDL1_2 disposed on the first electrode PE and including an inorganic material; and a second pixel defining layer PDL2_2 disposed on the first pixel defining layer PDL1_2 and including an organic material. The first pixel defining layer PDL1_2 may include a third sidewall closer to the opening OP_2. The second pixel defining layer PDL2_2 may include a spacer SPC_2 and a bank BK_2 overlapping the spacer SPC_2 in the thickness direction, and may include a fourth sidewall closer to the opening OP_2. That is, the third sidewall may overlap the first electrode PE in the thickness direction, and the fourth sidewall may not overlap the first electrode PE.

[0097] The first pixel defining layer PDL1_2 may include a first region PA1_1 overlapping the spacer SPC_2 in the thickness direction, and a second region PA2_1 not overlapping the spacer SPC_2 in the thickness direction.

[0098] The average thickness PH3_1 of the second area PA2_1 of the first pixel defining layer PDL1_2 may be less than the average thickness PH3 of the first area PA1_1. That is, the thickness of the second area PA2_1 of the first pixel defining layer PDL1_2 may decrease from the portion aligned with the fourth sidewall of the second pixel defining layer PDL2_2 toward the third sidewall. According to the method of manufacturing an OLED display device to be described later, during, for example, a dry etching process, the second area PA2_1 of the first pixel defining layer PDL1_2 may be exposed for a longer time from the portion aligned with the fourth sidewall toward the third sidewall.

[0099] In addition, the height BH3 of the bank BK_2 of the second pixel defining layer PDL2_2 and the height SH3 of the spacer SPC_2 may be less than Figure 4 1 and 2. The height BH2 of the bank BK_1 and the height SH2 of the spacer SPC_1 are shown in FIG. According to the method of manufacturing the OLED display device to be described later, during, for example, a dry etching process, the upper surface of the spacer SPC_2 of the second pixel defining layer PDL2_2 may be higher than Figure 4 The upper surface of the spacer SPC_1 shown in FIG. 1 is exposed for a longer time.

[0100] Hereinafter, a method of manufacturing the above-mentioned OLED display device will be described. Figures 6 to 8 are cross-sectional views of an OLED display device at various stages of fabrication according to some exemplary embodiments.

[0101] Reference Figures 6 to 8 According to some exemplary embodiments, the process steps of the method for manufacturing an OLED display device may include: stacking an inorganic material layer 10 on a base structure 101 on which a first electrode PE is formed; sequentially stacking an organic material layer 20 on the inorganic material layer 10; forming an organic pattern, the organic pattern including a first portion P1 and a second portion P2, the first portion P1 having a first thickness on the inorganic material layer 10, the second portion P2 having a second thickness (which may be less than the first thickness), and the organic pattern including an opening OP partially overlapping the first electrode PE in a third portion P3, the opening OP exposing the inorganic material layer 10; and etching the inorganic material layer 10 exposed via the organic pattern.

[0102] like Figure 6 As shown in FIG. 1 , an inorganic material layer 10 is formed on a base structure 101 on which a first electrode PE is formed. The inorganic material layer 10 may be made of, for example, silicon oxide (SiO 2 ) layer, silicon nitride (SiN x ) layer and silicon oxynitride (SiO 2 N x ) layer or multiple layers thereof.

[0103] Although not shown in the drawings for ease of explanation, Figure 2 , the substrate structure 101 may include at least: a buffer layer 110; a semiconductor layer ACT, disposed above the buffer layer 110 in the transistor region; a gate electrode GAT, insulated from the semiconductor layer ACT; a gate insulating layer 120, insulating the semiconductor layer ACT from the gate electrode GAT; an interlayer dielectric layer 130, located above the gate electrode GAT; a source / drain electrode SD, insulated from the gate electrode GAT and electrically connected to the semiconductor layer ACT through a contact hole CNT1; and a planarization layer 150, disposed on the source / drain electrode SD. The first electrode PE disposed on the planarization layer 150 may be electrically connected to the source / drain electrode SD via a contact hole CNT2.

[0104] like Figure 7 As shown in FIG. 1 , an organic material layer 20 is formed on the inorganic material layer 10. The organic material layer 20 may be a photosensitive organic layer. The organic material layer 20 may be made of, for example, at least one organic material selected from the group consisting of benzocyclobutene (BCB), polyimide (PI), polyamide (PA), acrylic resin, and phenol resin.

[0105] The transflective exposure process may be performed using, for example, a halftone mask HM or a slit mask. In the following description, a photosensitive layer containing a positive photosensitive material is used to form the photosensitive organic material layer 20. However, it will be understood that exemplary embodiments are not limited thereto. In some exemplary embodiments, a photosensitive layer containing a negative photosensitive material may be used to form the photosensitive organic material layer 20. The photosensitive organic material layer 20 and the inorganic material layer 10 are exposed using a halftone mask HM or a slit mask including portions with different transmittances, so that there are regions where the photosensitive organic material layer 20 and the inorganic material layer 10 are removed, regions where the photosensitive organic material layer 20 is retained to form the embankment BK of the second pixel defining layer PDL2, and regions where the photosensitive organic material layer 20 is retained to form the spacer SPC of the second pixel defining layer PDL2.

[0106] According to some exemplary embodiments, the half-tone mask HM or the slit mask may include: a first transmission portion Ma that transmits a first amount (e.g., 100%) of light; a second transmission portion Mb that transmits a second amount (e.g., approximately half of the first amount) of light; and a third transmission portion Mc that transmits a third amount (e.g., hardly transmits) light. The half-tone mask HM or the slit mask is placed so that the first transmission portion Ma is aligned with a position where the photosensitive organic material layer 20 and the inorganic material layer 10 are to be removed, the second transmission portion Mb is aligned with a position where the photosensitive organic material layer 20 remains and the bank BK where the second pixel defining layer PDL2 is to be formed, and the third transmission portion Mc is aligned with a position where the photosensitive organic material layer 20 remains and the spacer SPC where the second pixel defining layer PDL2 is to be formed, and an exposure process is performed.

[0107] Under the first transmission part Ma that transmits, for example, 100% of the light, the photosensitive organic material layer 20 is removed by development, thereby exposing the inorganic material layer 10 thereunder. Under the third transmission part Mc that blocks, for example, 100% of the light, the photosensitive organic material layer 20 remains intact, thereby forming the spacer SPC of the second pixel defining layer PDL2. Under the second transmission part Mb that transmits, for example, approximately half of the light, approximately half of the photosensitive organic material layer 20 is retained, thereby forming the bank BK of the second pixel defining layer PDL2.

[0108] The first electrode PE may be exposed by etching (e.g., etching away) the underlying inorganic material layer 10 exposed through the patterned photosensitive organic material layer 20. As a result, the sidewall of the first pixel defining layer PDL1 closer to the opening OP may be aligned with the sidewall of the second pixel defining layer PDL2 closer to the opening OP, as shown in FIG. Figure 8 as shown in .

[0109] In some exemplary embodiments, the process of etching the patterned photosensitive organic material layer 20 may include etching away the photosensitive organic material layer 20 as well as the inorganic material layer 10. When a material having a low etching selectivity to the inorganic material layer 10 and the photosensitive organic material layer 20 is used as an etchant, the photosensitive organic material layer 20 and the inorganic material layer 10 may be etched together through the etching process. The etching rate of the inorganic material layer 10 as the main etching target may be higher than the etching rate of the photosensitive organic material layer 20, but is not limited thereto.

[0110] Although the inorganic material layer 10 exposed by the photosensitive organic material layer 20 is etched by the etchant, the photosensitive organic material layer 20 may be etched back so that the photosensitive organic material layer 20 may be substantially reduced in size and thinned. Near the opening OP (i.e., the reduced-size corner), the photosensitive organic material layer 20 is etched inward, and thus, the photosensitive organic material layer 20 may be more etched near the opening OP. Therefore, the thickness of the photosensitive organic material layer 20 may be the smallest near the opening OP and become larger away from the opening OP.

[0111] In some exemplary embodiments, the total thickness of the second pixel defining layer PDL2 may be the largest at a portion where the spacer SPC overlaps the bank BK, and may be the smallest at a sidewall of the bank BK closer to the opening OP. In some exemplary embodiments, the thickness of the second pixel defining layer PDL2 may decrease from a portion where the spacer SPC is provided toward a sidewall closer to the opening OP.

[0112] According to various exemplary embodiments, by placing a half-tone mask HM that may replace a photoresist layer over the photosensitive organic material layer 20 and performing an exposure process, a second pixel defining layer PDL2 including an organic material may be formed on a first pixel defining layer PDL1 including an inorganic material through a single mask process. In this way, the number of mask processes can be reduced from two times to one time, and a process of ashing or stripping the photoresist layer can be eliminated.

[0113] In the following description, the same reference numerals may denote features similar to those described above. In addition, redundant descriptions will be omitted, and the description will be focused on the differences.

[0114] Fig. 9 and Fig.10 are cross-sectional views of an OLED display device at various stages of fabrication according to some exemplary embodiments.

[0115] Fig. 9 and Fig.10 is used to show the manufacturing Figure 4 The method is a cross-sectional view of some process steps of the method for producing an OLED display device 2. Figures 6 to 8 The method described differs in that in Figure 8 An additional etching process is performed after the etching process.

[0116] For example, execute the same Figures 6 to 8 The described process is substantially the same process, that is, the first and second pixel defining layers PDL1 and PDL2 aligned with each other are formed using a transflective mask, and then an etching process is further performed on the first and second pixel defining layers PDL1 and PDL2.

[0117] According to some exemplary embodiments, Figure 8 After the process of , an etching process of selectively removing the first pixel defining layer PDL1 disposed on the edge of the substrate structure 101 and the first electrode PE through the pattern of the second pixel defining layer PDL2 may be further performed. Figure 8 The etching process is performed by using the same material as the etchant used in the etching process of the present invention. That is, by using a material having a low etching selectivity to the inorganic material layer 10 and the photosensitive organic material layer 20 as an etchant, the photosensitive organic material layer 20 as well as the inorganic material layer 10 can be etched through the etching process. However, it will be understood that the exemplary embodiments are not limited thereto. In this process, a material having the same etching selectivity as the inorganic material layer 10 and the photosensitive organic material layer 20 can also be used. Figure 8 The etching selectivity of an etchant is different from the etching selectivity of an etchant.

[0118] As mentioned earlier, in Figure 8After the process shown in FIG. 1 , the thickness of the second pixel defining layer PDL2 decreases from the portion where the spacer SPC is disposed toward the sidewall closer to the opening OP. Therefore, the thinner the second pixel defining layer PDL2 disposed on the upper surface of the first electrode PE is, the more the first pixel defining layer PDL1 is etched.

[0119] Reference Fig. 9 , in the early stage of the etching process, a portion of the first pixel defining layer PDL1 that is closer to the opening OP and covered by the thinnest portion of the second pixel defining layer PDL2 may be exposed to form the middle first pixel defining layer IPDL1_1. Therefore, the thickness H2 of the exposed portion of the middle first pixel defining layer IPDL1_1 that is closer to the middle opening IOP_1 may be less than the thickness H1 of the middle first pixel defining layer IPDL1_1 that overlaps the middle spacer ISPC_1 of the middle second pixel defining layer IPDL2_1 in the thickness direction. By performing the etching process, the thickness of the middle second pixel defining layer IPDL2_1 may also be substantially reduced (e.g., gradually reduced). In this way, the middle bank IBK_1 is also formed.

[0120] Reference Fig.10 As the etching process proceeds, the middle second pixel defining layer IPDL2_1 may be etched back and reduced in size to form a second pixel defining layer PDL2_1 including a spacer SPC_1 and a bank BK_1.

[0121] Therefore, the second pixel defining layer PDL2_1 can be removed in proportion to the thickness, and the exposed portion of the intermediate first pixel defining layer IPDL1_1 can also be expanded. The intermediate first pixel defining layer IPDL1_1 and the intermediate second pixel defining layer IPDL2_1 are exposed for a longer time from the intermediate bank IBK_1 of the intermediate second pixel defining layer IPDL2_1 toward the intermediate opening IOP_1 of the intermediate first pixel defining layer IPDL1_1, thereby forming the first pixel defining layer PDL1_1 and the second pixel defining layer PDL2_1 and the opening OP_1. That is, from the bank BK_1 of the second pixel defining layer PDL2_1 toward the opening OP_1 of the first pixel defining layer PDL1_1, the thickness of each of the first pixel defining layer PDL1_1 and the second pixel defining layer PDL2_1 can be substantially reduced. Therefore, the relative thickness of the first pixel defining layer PDL1_1 can be as follows and as Fig.10 As shown in: the thickness H1 of the portion overlapping the second pixel defining layer PDL2_1>the thickness H4 of the portion closer to the sidewall of the bank BK_1>the thickness H3 of the portion overlapping the edge of the first electrode PE>the thickness H2_1 of the portion closer to the sidewall of the opening OP_1.

[0122] It will be understood that, although according to some exemplary embodiments, Figure 8 After the process is performed separately Fig. 9 processes, but these processes can be performed continuously.

[0123] Fig.11 is a cross-sectional view of an OLED display device at a manufacturing stage according to some exemplary embodiments.

[0124] Fig.11 Shows the manufacturing Figure 5 The method is similar to the method described above with reference to FIG. Fig. 9 and Fig.10 The method described differs in that in Fig.10 An additional etching process is performed after the etching process.

[0125] According to some exemplary embodiments, Fig.10 After the process of , an etching process of selectively removing the first pixel defining layer PDL1_1 disposed on the edge of the substrate structure 101 and the first electrode PE through the pattern of the second pixel defining layer PDL2_1 may be further performed to form the first pixel defining layer PDL1_2, the second pixel defining layer PDL2_2 and the opening OP_2. Fig. 9 and Fig.10 The etching process can be performed by using the same material as the etchant used in the etching process of the present invention. That is, by using a material having a low etching selectivity to the inorganic material layer 10 and the photosensitive organic material layer 20 as an etchant, the photosensitive organic material layer 20 as well as the inorganic material layer 10 can be etched through the etching process. However, it will be understood that the exemplary embodiments are not limited thereto. In this process, a material having the same etching selectivity as the inorganic material layer 10 and the photosensitive organic material layer 20 can be used. Fig. 9 and Fig.10 The etching selectivity of an etchant is different from the etching selectivity of an etchant.

[0126] In some exemplary embodiments, when Fig.10 When an etching process is further performed after the process, the second pixel defining layer PDL2_1 may be etched back and reduced in size to form a second pixel defining layer PDL2_2 including a spacer SPC_2 and a dam BK_2. Therefore, the second pixel defining layer PDL2_1 may be removed in proportion to the thickness, and the first pixel defining layer PDL1_1 may be partially exposed and patterned to form the first pixel defining layer PDL1_2. For example, a portion of the first pixel defining layer PDL1_1 below the second pixel defining layer PDL2_1 having a small thickness is first exposed, and then a portion of the first pixel defining layer PDL1_1 below the second pixel defining layer PDL2_1 having a larger thickness is exposed, thereby forming the first pixel defining layer PDL1_2 and the second pixel defining layer PDL2_2. Due to Fig.11 The thickness of the second pixel defining layer PDL2_2 before etching becomes smaller from the bank BK_2 toward the opening OP_2, and thus the underlying first pixel defining layer PDL1_2 is exposed for a longer time from the bank BK_2 of the second pixel defining layer PDL2_2 toward the opening OP_2 of the first pixel defining layer PDL1_2. That is, the thickness of each of the first pixel defining layer PDL1_2 and the second pixel defining layer PDL2_2 may be substantially reduced from the bank BK_2 of the second pixel defining layer PDL2_2 toward the opening OP_2 of the first pixel defining layer PDL1_2.

[0127] Therefore, the relative thickness of the first pixel defining layer PDL1_2 may be as follows and as Fig.11 As shown in: the thickness H1 of the portion overlapping with the second pixel defining layer PDL2_2> the thickness H5 of the portion closer to the side wall of the embankment BK_2> the thickness H4_1 of the portion closer to the edge of the first electrode PE> the thickness H3_1 of the portion overlapping with the edge of the first electrode PE> the thickness H2_2 of the portion closer to the side wall of the opening OP_2.

[0128] By sufficiently performing the etching process, a portion of the second pixel defining layer PDL2_2 including only a relatively thin bank BK_2 may be completely removed, while a portion of the second pixel defining layer PDL2_2 including a relatively thick spacer SPC_2 may be retained. The retained portion of the second pixel defining layer PDL2_2 may include the bank BK_2 whose thickness is reduced and the spacer SPC_2 on the bank BK_2. A sidewall of one end of the retained bank BK_2 may be aligned with a sidewall of one end of the spacer SPC_2.

[0129] It will be understood that, although according to some exemplary embodiments, Fig.10 After the process is performed separately Fig.11 processes, but these processes can be performed continuously.

[0130] Although certain exemplary embodiments and implementations have been described herein, other embodiments and modifications will be apparent from this description. Therefore, the inventive concept is not limited to such embodiments, but to the broader scope of the claims and various obvious modifications and equivalent arrangements, as will be apparent to one of ordinary skill in the art.

Claims

1. An organic light emitting diode display device, comprising: a first electrode; a pixel defining layer, comprising an opening for partially exposing the first electrode; an organic emission layer, disposed on the first electrode, wherein the organic emission layer is disposed in the opening; as well as a second electrode disposed on the organic emission layer so that the organic emission layer is located between the second electrode and the first electrode, The pixel defining layer includes: a first pixel defining layer, which is disposed on the first electrode and includes an inorganic material; and a second pixel defining layer, which is disposed on the first pixel defining layer and includes an organic material. The first pixel defining layer includes a first side wall closest to the opening, The second pixel defining layer includes a second side wall closest to the opening, The first pixel defining layer includes: a first region overlapping with the second pixel defining layer in a thickness direction; and a second region protruding from the second side wall of the second pixel defining layer, the second region not overlapping with the second pixel defining layer in the thickness direction, wherein the average thickness of the second region of the first pixel defining layer is less than the average thickness of the first region, and Wherein, a thickness of the second region of the first pixel defining layer decreases from a portion aligned with the second sidewall toward the first sidewall.

2. The organic light emitting diode display device according to claim 1, wherein: The first side wall overlaps the first electrode in the thickness direction, and The second side wall does not overlap the first electrode in the thickness direction.

3. The organic light emitting diode display device according to claim 1, wherein: The second pixel defining layer comprises: dikes; and A spacer protrudes from the bank in the thickness direction.

4. The organic light emitting diode display device according to claim 3, wherein: The bank and the spacer overlap the first region in the thickness direction.

5. The organic light emitting diode display device according to claim 3, wherein: The second pixel defining layer further includes a third sidewall of the spacer, and The second side wall is aligned with the third side wall.

6. The organic light emitting diode display device according to claim 1, further comprising: A packaging substrate is located on the second electrode. Wherein, the encapsulation substrate includes at least one inorganic encapsulation layer and at least one organic encapsulation layer.

7. A method for manufacturing an organic light emitting diode display device, the method comprising the following steps: stacking an inorganic material layer on the substrate having the first electrode formed thereon; forming an organic layer pattern on the inorganic material layer, the organic layer pattern comprising: a first portion having a first thickness; a second portion having a second thickness smaller than the first thickness; an opening partially exposing the inorganic material layer, the opening partially overlapping the first electrode; and a third portion located between the second portion and the opening and having an average thickness smaller than the second thickness; and etching the inorganic material layer exposed by the organic layer pattern, The etched inorganic material layer includes a first sidewall closest to the opening, and Wherein, the thickness of the inorganic material layer after etching decreases from a portion of the third portion aligned with the second sidewall closest to the opening toward the first sidewall.

8. The method according to claim 7, wherein: The thickness of the third portion decreases from a boundary with the second portion toward the opening.

9. The method according to claim 7, wherein: The etching step of the inorganic material layer is performed by dry etching the inorganic material layer.

10. The method according to claim 7, wherein: The etching step of the inorganic material layer includes etching the organic layer pattern together with the inorganic material layer so that the organic layer pattern is reduced in size.

11. The method according to claim 7, wherein: The organic layer pattern includes at least one of benzocyclobutene, polyimide, polyamide, acrylic resin, and phenol resin.

12. The method according to claim 7, wherein: The step of forming the organic layer pattern comprises: disposing a transflective mask on the inorganic material layer, the transflective mask including a transmissive portion, a transflective portion having a transmittance lower than that of the transmissive portion, and a light blocking portion; and Exposure and development processes are performed using the transflective mask.

Images