Switching element, variable resistance memory device, and method of manufacturing switching element

By employing a multi-layer structure and switching patterns of varying densities in the switching elements, the problems of leakage current and threshold voltage uniformity in semiconductor memory devices are solved, resulting in higher reliability and lower power consumption.

CN110896087BActive Publication Date: 2026-07-17SAMSUNG ELECTRONICS CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SAMSUNG ELECTRONICS CO LTD
Filing Date
2019-09-11
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

Existing semiconductor memory devices suffer from leakage current problems and poor threshold voltage uniformity, which affect the reliability and power consumption of the devices.

Method used

The switching element employs a multi-layer structure, including a lower blocking electrode, a switching pattern, and an upper blocking electrode. The switching pattern consists of first and second switching patterns with different densities, and different inert gases are used to form gaps to regulate the threshold voltage and reduce leakage current.

Benefits of technology

It effectively reduces leakage current, improves the uniformity of threshold voltage, enhances the reliability of switching elements, and reduces power loss.

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Abstract

A switching element, a variable resistance memory device, and a method of manufacturing the switching element are provided. The switching element includes a lower barrier electrode disposed on a substrate, a switching pattern disposed on the lower barrier electrode, and an upper barrier electrode disposed on the switching pattern. The switching pattern includes a first switching pattern and a second switching pattern disposed on the first switching pattern and having a different density from the first switching pattern.
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