Method for manufacturing display device

Abstract

A method for manufacturing a display device is provided, the method comprising the following steps: forming a plurality of display devices in a display area of ​​a substrate including an opening area and a display area surrounding the opening area; and forming an opening in the opening area, wherein the step of forming the opening comprises: performing a first scanning operation, thereby irradiating a laser beam onto an edge of the opening area in a direction of the substrate along a plurality of first unit paths; and performing a second scanning operation, thereby irradiating a laser beam onto an edge of the opening area in a direction of the substrate along a plurality of second unit paths different from the plurality of first unit paths.

Description

[0001] This application claims priority to and the benefit of Korean Patent Application No. 10-2018-0168716 filed on December 24, 2018, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference. Technical Field

[0002] An aspect of one or more embodiments is directed to a method of manufacturing a display device. Background Art

[0003] With the rapid development of the field of display technology for visualizing or graphically representing various electrical signal information, a wide range of flat panel display devices having excellent characteristics such as thinness, lightness, and low power consumption have been studied and developed. For example, an organic light emitting display device, which is a self-emitting display device that generally does not require a separate light source or backlight, can be driven by a relatively low voltage and can be formed to have a relatively thin and light structure while having superior characteristics such as a wide viewing angle, a high contrast ratio, a high response rate, etc. Therefore, the organic light emitting display device has attracted attention as a next-generation display device.

[0004] Recently, as display devices have been reduced in weight and have become more compact in size, the scope of use of display devices has steadily increased.

[0005] While increasing the ratio of the display area to the general area or the entire area of ​​the display device, various functions may be added to the display device.For example, according to some example embodiments, a display device having a display area including an opening may be formed.

[0006] The above information disclosed in this Background section is only for enhancement of understanding of the background and therefore it may contain information that does not constitute the prior art. Summary of the invention

[0007] Aspects of one or more embodiments relate to a method of manufacturing a display device, for example, to a method of manufacturing a display device capable of reducing damage to a processing area and improving production yield and throughput.

[0008] In the case of a display device including an opening, a method of implementing a delay time after a single processing operation can be used to reduce damage to the processing area when the opening is formed by operating with a laser beam. However, when the delay time increases, the production yield and production volume are reduced.

[0009] According to some example embodiments, in a method of manufacturing a display device, the method may be able to reduce damage to a processing area and improve production yield and throughput.

[0010] Additional aspects will be set forth in part in the description which follows and, in part, will be apparent from the description, or may be learned by practice of the presented example embodiments.

[0011] According to some example embodiments, in a method for manufacturing a display device, the method includes the steps of: forming a plurality of display devices in a display area of ​​a substrate including an opening area and a display area surrounding the opening area; and forming an opening in the opening area, wherein the step of forming the opening includes: performing a first scanning operation, thereby irradiating a laser beam onto an edge of the opening area in a direction of the substrate along a plurality of first unit paths; and performing a second scanning operation, thereby irradiating the laser beam onto the edge of the opening area in a direction of the substrate along a plurality of second unit paths different from the plurality of first unit paths.

[0012] According to some example embodiments, the step of forming the opening may include alternately and repeatedly performing a first scanning operation and a second scanning operation.

[0013] According to some example embodiments, in at least one of the first scanning operation and the second scanning operation, a time point at which irradiation of the laser beam along a previous unit path in adjacent unit paths is completed may be different from a time point at which irradiation of the laser beam along a next unit path in the adjacent unit paths is started.

[0014] According to some example embodiments, each of the plurality of first unit paths and the plurality of second unit paths may have at least a portion overlapping an edge of an open region.

[0015] According to some example embodiments, the plurality of first unit paths and the plurality of second unit paths may have the same shape.

[0016] According to some example embodiments, a point at which adjacent first unit paths among the plurality of first unit paths cross each other may be located in a perpendicular bisector of a second unit path among the plurality of second unit paths, the second unit path being located between the adjacent first unit paths.

[0017] According to some example embodiments, at least one of the plurality of first unit paths and the plurality of second unit paths may have an arc shape.

[0018] According to some example embodiments, at least one of the plurality of first unit paths and the plurality of second unit paths may have at least a portion having a bent shape.

[0019] According to some example embodiments, at least one of the plurality of first unit paths and the plurality of second unit paths may include at least two unit paths having different lengths from each other.

[0020] According to some example embodiments, forming the opening may further include performing a third scanning operation to irradiate the laser beam onto an edge of the opening region in a direction of the substrate along a plurality of third unit paths different from the plurality of first unit paths and the plurality of second unit paths.

[0021] According to some example embodiments, the method may further include forming a thin film encapsulation layer on the substrate to cover the plurality of display devices.

[0022] According to some example embodiments, the forming of the opening may include forming the opening to penetrate the substrate and the thin film encapsulation layer in a thickness direction of the substrate.

[0023] According to some example embodiments, forming the plurality of display devices may include forming a pixel circuit including a thin film transistor, forming a pixel electrode electrically connected to the thin film transistor, and forming an emission layer on the pixel electrode and forming a counter electrode on the emission layer.

[0024] According to some example embodiments, in a method for manufacturing a display device, the method includes the steps of: forming a plurality of display devices in a display area of ​​a substrate including an opening area and a display area surrounding the opening area; and forming an opening in the opening area, wherein the step of forming the opening in the opening area includes: repeating a first scanning operation n times, thereby irradiating a laser beam onto an edge of the opening area in a direction of the substrate along n (n is a natural number equal to or greater than 2) first unit paths; and repeating a second scanning operation n times, thereby irradiating a laser beam onto an edge of the opening area in a direction of the substrate along n second unit paths different from the n first unit paths.

[0025] According to some example embodiments, forming the opening in the opening region may include alternately and repeatedly performing a first scanning operation and a second scanning operation.

[0026] According to some example embodiments, in at least one of the first scanning operation and the second scanning operation, a time point at which irradiation of the laser beam along a previous unit path in adjacent unit paths is completed may be different from a time point at which irradiation of the laser beam along a next unit path in the adjacent unit paths is started.

[0027] According to some example embodiments, each of the n first unit paths and the n second unit paths may have at least a portion overlapping an edge of an open region.

[0028] According to some example embodiments, the n first unit paths and the n second unit paths may have the same shape.

[0029] According to some example embodiments, at least one of the n first unit paths and the n second unit paths may include at least two unit paths having different lengths from each other.

[0030] According to some example embodiments, forming the opening may further include performing a third scanning operation, thereby irradiating the laser beam onto an edge of the opening area in a direction of the substrate along n third unit paths different from the n first unit paths and the n second unit paths. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] These and / or other aspects will become clearer and more easily understood through the following description of embodiments in conjunction with the accompanying drawings, in which:

[0032] Figure 1 is a schematic plan view of a display device manufactured by using a method of manufacturing a display device according to some example embodiments;

[0033] Figure 2 is along Figure 1 An example cross-sectional view taken along line II-II';

[0034] Figure 3 is a schematic diagram of an example of a process of manufacturing a display device according to some example embodiments;

[0035] Figure 4A and Figure 4B yes Figure 3 A schematic diagram of another example of a process for manufacturing a display device;

[0036] Figure 5 is a schematic diagram of an example of a process of manufacturing a display device according to some example embodiments; and

[0037] Figure 6 is a schematic diagram of an example of a process of manufacturing a display device according to some example embodiments. DETAILED DESCRIPTION

[0038] Because the present disclosure allows for various changes and many embodiments, aspects of some example embodiments will be shown in the drawings and described in some detail in the written description. However, the example embodiments are not intended to limit the present disclosure to a specific mode of practice, and it will be understood that all changes, all equivalents, and all substitutes that do not depart from the spirit and technical scope of the present disclosure are included in the present disclosure. In the description of the present disclosure, certain detailed explanations of the related art may be omitted when it is considered that they would unnecessarily obscure the essence of the present disclosure.

[0039] It will be understood that although the terms "first", "second", etc. may be used herein to describe various components, these components should not be limited by these terms. These components are only used to distinguish one component from another.

[0040] It will be understood that when a layer, region or component is referred to as being formed “on” or “on” another layer, region or component, the layer, region or component may be formed “on” or “directly” or “indirectly”. That is, for example, intervening layers, regions or components may be present.

[0041] In the following examples, the x-axis, y-axis, and z-axis are not limited to the three axes of the rectangular coordinate system and can be interpreted in a broader sense. For example, the x-axis, y-axis, and z-axis can be perpendicular to each other, or can represent different directions that are not perpendicular to each other.

[0042] Hereinafter, reference will now be made in more detail to embodiments, examples of which are shown in the accompanying drawings, wherein the same reference numerals always represent the same elements. As used herein, the term "and / or" includes any and all combinations of one or more related listed items. Expressions such as "at least one (kind / person) of ... " modify the entire column of elements when located after a column of elements, without modifying the individual elements in the column. For ease of illustration, the size of the elements in the accompanying drawings may be exaggerated. In other words, since the size and thickness of the components in the accompanying drawings are arbitrarily shown for ease of illustration, the following embodiments are not limited thereto.

[0043] Figure 1 is a schematic plan view of a display device 10 manufactured by using a method of manufacturing a display device according to some example embodiments, Figure 2 is along Figure 1 An example cross-sectional view taken along line II-II'.

[0044] First, refer to Figure 1 , the display device 10 may include a display area DA for emitting light and a non-display area NDA not for emitting light. The non-display area NDA may be arranged adjacent to the display area DA. The display device 10 may provide or display a specific image by using light emitted from a plurality of pixels P arranged in the display area DA.

[0045] The display device 10 may include an opening area OA at least partially surrounded by the display area DA. According to some example embodiments, Figure 1The opening area OA is shown to be completely surrounded by the display area DA. The non-display area NDA may include a first non-display area NDA1 surrounding the opening area OA and a second non-display area NDA2 surrounding the outside of the display area DA. The first non-display area NDA1 may substantially surround the opening area OA, the display area DA may substantially surround the first non-display area NDA1, and the second non-display area NDA2 may substantially surround the display area DA.

[0046] Hereinafter, an organic light emitting display device is described as an example of a display device 10 according to some example embodiments. However, the display device according to the present disclosure is not limited thereto. According to some example embodiments, various types of display devices such as an inorganic light emitting display, a quantum dot light emitting display, etc. may be used.

[0047] Next, refer to Figure 2 The display device 10 may include an opening area OA, a display area DA, and a first non-display area NDA1 between the opening area OA and the display area DA. The display device 10 may include a first opening 10H corresponding to the opening area OA.

[0048] about Figure 2 In the display area DA shown in FIG. 1 , the thin film transistor TFT and the storage capacitor Cst may be disposed on the substrate 100 in the display area DA.

[0049] The substrate 100 may include a plurality of layers. For example, the substrate 100 may include a first base layer 101, a first barrier layer 102, a second base layer 103, and a second barrier layer 104 which are sequentially stacked.

[0050] Each of the first base layer 101 and the second base layer 103 may include a polymer resin. For example, the first base layer 101 and the second base layer 103 may include a polymer resin such as polyethersulfone, polyarylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyacrylate, polyphenylene sulfide, polyimide, polycarbonate, cellulose triacetate, cellulose acetate propionate, etc. The above polymer resin may be transparent.

[0051] Each of the first barrier layer 102 and the second barrier layer 104 may include a barrier layer that prevents penetration of external impurities, and may include a material including silicon nitride (SiN x ) and / or silicon oxide (SiO x ) of a single layer or multiple layers of inorganic material.

[0052] However, the substrate 100 is not limited thereto. The substrate 100 may include a rigid substrate including glass, reinforced plastic resin, or the like.

[0053] The buffer layer 201 may be formed on the substrate 100 to prevent or reduce the penetration of impurities into the semiconductor layer Act of the thin film transistor TFT. The buffer layer 201 may include a SiN x or SiO x and an inorganic insulating material, and may include a single layer or multiple layers containing the above-mentioned inorganic insulating material.

[0054] A pixel circuit including a thin film transistor TFT and a storage capacitor Cst may be disposed on the buffer layer 201 .

[0055] The thin film transistor TFT may include a semiconductor layer Act, a gate electrode GE, a source electrode SE, and a drain electrode DE. Figure 2 The thin film transistor TFT shown in the figure may correspond to the driving thin film transistor. According to some example embodiments, a top gate transistor is shown in which the gate electrode GE is arranged on the semiconductor layer Act and the gate insulating layer 203 is interposed between the gate electrode GE and the semiconductor layer Act. However, according to some example embodiments, the thin film transistor TFT may be a bottom gate transistor.

[0056] The semiconductor layer Act may include polycrystalline silicon. Alternatively, the semiconductor layer Act may include amorphous silicon, an oxide semiconductor, an organic semiconductor, etc. The gate electrode GE may include a low-resistance metal material. The gate electrode GE may include a conductive material such as Mo, Al, Cu, Ti, etc., and may include a single layer or multiple layers including the above materials.

[0057] The gate insulating layer 203 between the semiconductor layer Act and the gate electrode GE may include SiO x 、SiN x The gate insulating layer 203 may include an inorganic insulating material such as silicon oxynitride (SiON), aluminum oxide, titanium oxide, tantalum oxide, and hafnium oxide. The gate insulating layer 203 may include a single layer or a plurality of layers including the above materials.

[0058] The source electrode SE and the drain electrode DE may include a material having good conductivity. The source electrode SE and the drain electrode DE may include a conductive material such as Mo, Al, Cu, Ti, etc., and may include a single layer or a multilayer including the above materials. According to some example embodiments, the source electrode SE and the drain electrode DE may include a multilayer of Ti / Al / Ti.

[0059] The storage capacitor Cst may include a lower electrode CE1 and an upper electrode CE2 overlapped with each other, and a first interlayer insulating layer 205 is interposed between the lower electrode CE1 and the upper electrode CE2. The storage capacitor Cst may overlap with the thin film transistor TFT. In this regard, Figure 2It is shown that the gate electrode GE of the thin film transistor TFT corresponds to the lower electrode CE1 of the storage capacitor Cst. According to some example embodiments, the storage capacitor Cst may not overlap the thin film transistor TFT.

[0060] A pixel electrode 221 , an intermediate layer 222 , an opposing electrode 223 , and a capping layer 230 electrically connected to the thin film transistor TFT may be disposed in the display area DA. Insulating layers 203 , 205 , 207 , and 209 may be disposed between the semiconductor layer Act of the thin film transistor TFT and the pixel electrode 221 .

[0061] The pixel electrode 221 may include indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In 2 O 3 ), indium gallium oxide (IGO) or aluminum zinc oxide (AZO). According to some example embodiments, the pixel electrode 221 may include a reflective layer including Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr or a mixture thereof. According to some example embodiments, the pixel electrode 221 may also include a conductive oxide including ITO, IZO, ZnO or In above / below the reflective layer. 2 O 3 layer.

[0062] The pixel defining layer 211 may be formed on the pixel electrode 221. The pixel defining layer 211 may include an opening exposing an upper surface of the pixel electrode 221, and may cover an edge of the pixel electrode 221. The pixel defining layer 211 may include an organic insulating material or an inorganic insulating material, or may include an organic insulating material and an inorganic insulating material.

[0063] The intermediate layer 222 may include an emission layer. The emission layer may include a high molecular weight organic material or a low molecular weight organic material that emits light of a specific color. The intermediate layer 222 may include various functional layers having various functions above or below the emission layer.

[0064] The counter electrode 223 may include a conductive material having a low work function. For example, the counter electrode 223 may include a (semi) transparent layer including Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca or an alloy thereof. Alternatively, the counter electrode 223 may also include a conductive material such as ITO, IZO, ZnO or In on the (semi) transparent layer including the above materials. 2 O 3 The opposing electrode 223 may be formed not only in the display area DA but also in the first non-display area NDA1. The intermediate layer 222 and the opposing electrode 223 may be formed by using thermal deposition.

[0065] The display device including the pixel electrode 221, the intermediate layer 222, and the opposing electrode 223 may be covered by the thin film encapsulation layer 300. The thin film encapsulation layer 300 may include at least one organic encapsulation layer and at least one inorganic encapsulation layer. Figure 2 It is shown that the thin film encapsulation layer 300 includes a first inorganic encapsulation layer 310, a second inorganic encapsulation layer 330, and an organic encapsulation layer 320 disposed between the first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330. According to some example embodiments, the number of organic encapsulation layers, the number of inorganic encapsulation layers, and the order of stacking the inorganic encapsulation layers and the organic encapsulation layers may be changed.

[0066] The first inorganic encapsulation layer 310 may include aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, SiO x 、SiN x The organic encapsulation layer 320 may be formed of at least one inorganic insulating material such as SiON or SiO2, and may be formed by chemical vapor deposition (CVD) or the like. The organic encapsulation layer 320 may include a polymer material. The polymer material may include acrylic resin, epoxy resin, polyimide, polyethylene, or the like.

[0067] about Figure 2 The first non-display area NDA1 shown in FIG. 1 may include a first sub non-display area SNDA1 relatively adjacent to the display area DA and a second sub non-display area SNDA2 relatively adjacent to the opening area OA or the first opening 10H.

[0068] The first sub non-display area SNDA1 may be a signal line ( Figure 1 An area through which a data line DL, SL, etc.) (e.g., a data line DL) passes. Figure 2 The data line DL shown in FIG. 1 may be connected to the bypass opening area ( Figure 1 The first sub non-display area SNDA1 may be a data line DL and a scan line ( Figure 1 SL) through which the wiring area or data line DL and scan line ( Figure 1 The bypass area of ​​SL).

[0069] like Figure 2 As shown in , the data lines DL may be alternately arranged, and an insulating layer is placed between the data lines DL. Alternatively, according to some example embodiments, the data lines DL may be arranged on the same insulating layer. When adjacent data lines DL are arranged above and below each other and an insulating layer (e.g., a second interlayer insulating layer 207) is placed between adjacent data lines DL, the gap (spacing) between the adjacent data lines DL may be reduced, and thus the width of the first non-display area NDA1 may be reduced. Similarly, according to some example embodiments, the scan lines ( Figure 1The scan line ( SL) may be arranged on a layer different from that of the data line DL in the first sub non-display area SNDA1. Figure 1 The SL) may be located on the first interlayer insulating layer 205.

[0070] The second sub non-display area SNDA2 may be a groove area in which the groove is arranged. Figure 2 Three grooves in the second sub non-display area SNDA2 are shown. The grooves G may be formed in a plurality of layers including a first layer and a second layer, the first layer and the second layer including materials different from each other. Figure 2 As shown in , according to some example embodiments, a groove G may be formed adjacent to the first opening 10H of the substrate 100 .

[0071] The groove G may include an undercut portion UC that is concave in the thickness direction (ie, -z direction) of the substrate 100. Based on the undercut portion UC, some functional layers included in the intermediate layer 222 and the counter electrode 223 formed throughout the display area DA and the first non-display area NDA1 may be disconnected, thereby solving or preventing the problem of water infiltrating into the display area DA through the process surface of the first opening 10H.

[0072] Meanwhile, in the process of forming the first opening 10H by using the laser beam LB, thermal damage or cracks may occur in the processing area. For example, a separation defect may occur, whereby the interface surface of the display device including the pixel circuit including the thin film transistor TFT and the storage capacitor Cst, the pixel electrode 221, the intermediate layer 222, and the counter electrode 223 and the interface surface of the thin film encapsulation layer 300 covering the display device are separated from each other.

[0073] In the following, reference is made to Figures 3 to 6 , a method of forming the first opening 10H in the opening area OA of the substrate 100 by using the laser beam LB while reducing the above-mentioned thermal damage or crack will be described in more detail.

[0074] Figure 3 is a schematic diagram of an example of a process of manufacturing a display device according to some example embodiments, Figure 4A and Figure 4B yes Figure 3 Another schematic diagram of a process for manufacturing a display device.

[0075] Reference Figure 3 , according to the method of manufacturing a display device according to some example embodiments, an opening may be formed in the opening area OA through a preparing operation S0, a first operation S1, a second operation S2, a third operation S3, a fourth operation S4, . . . , and a 2nth operation S2n.

[0076] Here, in the formation Figure 2All components of the display device 10 shown in FIG. 1 (eg, the thin film transistor TFT, the storage capacitor Cst, the pixel electrode 221, the intermediate layer 222, the counter electrode 223, etc.) may then form openings.

[0077] Before directly forming the opening, a preparation operation S0 may be performed in which the opening area OA preset on the substrate 100 may be divided into a plurality of unit areas a1, a2, a3, ..., an-1 and an. Here, the number n into which the opening area OA is divided is a natural number equal to or greater than 2.

[0078] The opening area OA may be a display area ( Figure 1 The area surrounded by DA) and the area to be removed later by the laser process, as shown above Figure 1 Therefore, Figure 2 Like the first opening 10H shown in FIG. 1 , the substrate 100 may be provided with a first opening 10H in the thickness direction ( Figure 2 An opening penetrating the layer from the substrate 100 to the thin film encapsulation layer 300 is formed in the -z direction (in the -z direction of the thin film encapsulation layer).

[0079] Afterwards, the laser beam ( Figure 2 LB) performs a process of scanning the edge of the opening area OA along a preset path.

[0080] First, as shown in the first operation S1, a plurality of first unit paths PA1 may be respectively set with respect to the plurality of unit regions a1, a2, a3, ..., an-1, and an divided in the previous preparation operation S0. Here, the plurality of first unit paths PA1 may be set to correspond to the divided plurality of unit regions a1, a2, a3, ..., an-1, and an, respectively.

[0081] Each of the plurality of first unit paths PA1 may include a portion overlapping the edge of the opening area OA. Thus, the plurality of first unit paths PA1 may be gathered to form a curved line having the same (or substantially the same) shape as the edge of the opening area OA.

[0082] According to some example embodiments, each of the plurality of first unit paths PA1 may have an arc shape. Figure 3 As shown in , adjacent first unit paths PA1 among the plurality of first unit paths PA1 may be set to partially overlap each other. However, the embodiment is not necessarily limited thereto, and adjacent first unit paths among the plurality of first unit paths PA1 may be set to be spaced apart from each other.

[0083] As described above, along the set plurality of first unit paths PA1, the laser beam ( Figure 2 LB) on the substrate ( Figure 2Here, the laser beam LB may be sequentially moved along the plurality of first unit paths PA1 in the first scanning direction D1, and may be irradiated to the individual unit areas a1, a2, a3, ... an-1, and an along the corresponding first unit paths PA1 by moving in the second scanning direction D2 corresponding to the first scanning direction D1. As described above, after the laser beam LB has traveled around the edge of the opening area OA, the first scanning operation may be completed.

[0084] In the first scanning operation, the second scanning direction D2 with respect to the corresponding first unit path PA1 and the first scanning direction D1 with respect to the plurality of first unit paths PA1 may be set to substantially correspond to each other to effectively perform the operation of irradiating the laser beam LB.

[0085] Meanwhile, when the laser beam LB moves from a previous unit path among the first unit paths PA1 to a next unit path, the laser beam LB may be irradiated discontinuously. In other words, when the laser beam LB moves from a previous first unit path PA1 to a directly next first unit path PA1, a time point at which irradiation of the laser beam LB along the previous first unit path PA1 is completed may be different from a time point at which irradiation of the laser beam LB along the next first unit path PA1 is started.

[0086] Next, as shown in the second operation S2, a plurality of second unit paths PA2 may be set with respect to the plurality of unit regions a1, a2, a3, ..., an-1, and an, respectively. Here, the plurality of second unit paths PA2 may be set to correspond to the plurality of unit regions a1, a2, a3, ..., an-1, and an, respectively, and may have a different path from the plurality of first unit paths PA1.

[0087] According to some example embodiments, each of the plurality of second unit paths PA2 may be set in a region between adjacent first unit paths PA1 .

[0088] Each of the plurality of second unit paths PA2 may also include a portion overlapping the edge of the opening area OA. Therefore, the plurality of second unit paths PA2 may be gathered to form a curved line having substantially the same shape as the edge of the opening area OA.

[0089] According to some example embodiments, the plurality of second unit paths PA2 may be paths having the same shape as the plurality of first unit paths PA1. Therefore, when each of the plurality of first unit paths PA1 has an arc shape, each of the plurality of second unit paths PA2 may also have an arc shape.

[0090] According to some example embodiments, as shown in a 2nth operation S2n which is a final operation in a process of forming an opening, a point MP at which adjacent first unit paths PA1 among a plurality of first unit paths PA1 cross each other may be located in a perpendicular bisector V of a second unit path PA2 disposed between the adjacent first unit paths PA1.

[0091] Like the plurality of first unit paths PA1, adjacent second unit paths PA2 among the plurality of second unit paths PA2 may be set to partially overlap each other. However, the embodiment is not necessarily limited thereto. Adjacent second unit paths PA2 among the plurality of second unit paths PA2 may be set to be spaced apart from each other.

[0092] The laser beam ( Figure 2 LB) along the plurality of second unit paths PA2 set as described above on the substrate ( Figure 2 Here, the laser beam LB may sequentially move along the plurality of second unit paths PA2 in the first scanning direction D1, and the laser beam LB may be irradiated to the individual unit areas a1, a2, a3, ..., an-1, and an along the corresponding second unit paths PA2 by moving in the second scanning direction D2 corresponding to the first scanning direction D1. After the laser beam LB travels around the edge of the opening area OA as described above, the second scanning operation may be completed.

[0093] In the second scanning operation, the second scanning direction D2 with respect to the corresponding second unit paths PA2 and the first scanning direction D1 with respect to the plurality of second unit paths PA2 may be set to substantially correspond to each other to effectively perform the operation of irradiating the laser beam LB.

[0094] Next, as shown in the third operation S3, the laser beam LB may be irradiated onto the edge of the opening area OA along the plurality of first unit paths PA1 set in the first operation S1 in the direction of the substrate 100. That is, in the third operation S3, only the first scanning operation of the first operation S1 may be repeated.

[0095] Next, as shown in the fourth operation S4, the laser beam LB may be irradiated onto the edge of the opening area OA along the plurality of second unit paths PA2 set in the second operation S2 in the direction of the substrate 100. That is, in the fourth operation S4, only the second scanning operation of the second operation S2 may be repeated.

[0096] Thereafter, the first scanning operation of the first operation S1 and the second scanning operation of the second operation S2 may be performed alternately and repeatedly. Here, since the plurality of first unit paths PA1 as the scanning path of the first scanning operation are different from the plurality of second unit paths PA2 as the scanning path of the second scanning operation, the scanning operation of the second scanning operation may be performed by avoiding at least a portion of the area scanned in the previous first scanning operation. Therefore, at least a portion of the processing area of ​​the first scanning operation may have an effect of delay time during the second scanning operation, and therefore, the thermal effect or thermal damage to the processing area may be minimized.

[0097] After the first scanning operation and the second scanning operation as described above are alternately and repeatedly performed, as shown in the 2nth operation S2n, the edge of the opening area OA may be cut. Figure 1 The opening area of ​​10) Figure 1 OA) is formed on the substrate ( Figure 2 100) in the thickness direction ( Figure 2 -z direction) through the base ( Figure 2 100) to the thin film encapsulation layer ( Figure 2 The opening of the layer (300) Figure 2 10H).

[0098] at the same time, Figure 3 It is shown that each of the plurality of first unit paths PA1 has the same specific shape and the same specific length, and each of the plurality of second unit paths PA2 has the same specific shape and the same specific length. However, the embodiment is not limited thereto.

[0099] According to another embodiment, Figure 4A As shown in FIG, the plurality of first unit paths PA1 may include at least two unit paths PA1-1 and PA1-2 having different lengths or different shapes from each other.

[0100] For example, the plurality of first cell paths PA1 may include a first-first cell path PA1-1 and a first-second cell path PA1-2, wherein the first-first cell path PA1-1 and the first-second cell path PA1-2 may have different lengths or different shapes from each other.

[0101] As mentioned above, because the display area ( Figure 2 DA) is arranged around the opening area ( Figure 2Since the opening area OA has a portion that is adjacent to the organic layer included in the display area DA or adjacent to the micro-patterned portion, there may be a portion of the opening area OA for which the thermal effect must be minimized based on the position of the components provided in the display area DA. For example, for the portion of the opening area OA, the thermal effect due to the laser process must be minimized.

[0102] Therefore, in the portion of the opening area OA for which the thermal effect must be minimized, the scanning path of the laser beam LB can be set to a relatively short first-first unit path PA1-1, and in the other portion of the opening area OA, the scanning path of the laser beam LB can be set to a relatively long first-second unit path PA1-2. By doing so, when the opening is formed by using the laser beam LB, the occurrence of thermal damage or cracks in the display area DA surrounding the opening area OA can be prevented or reduced.

[0103] Likewise, if Figure 4B As shown in FIG. 1 , the plurality of second unit paths PA2 may include a second-first unit path PA2 - 1 and a second-second unit path PA2 - 2 having different lengths or shapes from each other.

[0104] Figure 5 is a schematic diagram of an example of a process of manufacturing a display device according to some example embodiments, Figure 6 is a schematic diagram of an example of a process of manufacturing a display device according to another embodiment.

[0105] first, Figure 5 The method for manufacturing a display device shown in Figure 3 The process and sequence of the method for manufacturing a display device shown in FIG. 1 are the same or substantially the same as the process and sequence, although the shape of the unit path and the like are different from those of FIG. 1 . Figure 3 Therefore, in the following, the method of manufacturing a display device shown in FIG. Figure 3 Methods of manufacturing a display device according to some example embodiments will be described with respect to aspects different from those of the method of manufacturing a display device shown in (hereinafter, referred to as “previous embodiment”).

[0106] According to some example embodiments, Figure 3 As in the embodiment shown in , an opening may be formed in the opening area OA through a preparation operation S0, a first operation S1, a second operation S2, a third operation S3, a fourth operation S4, . . . , and a 2nth operation S2n.

[0107] Here, it can be formed in Figure 2After all components of the display device 10 shown in FIG. 1 (eg, thin film transistor TFT, storage capacitor Cst, pixel electrode 221, intermediate layer 222, counter electrode 223, etc.) are formed, an opening is formed, which is the same as the above reference Figure 3 The embodiments described are the same.

[0108] First, before directly forming the opening, a preparation operation S0 may be performed. In this operation, the opening area OA preset on the substrate 100 may be divided into a plurality of unit areas a1, a2, a3, ..., an-1 and an. Here, the number n into which the opening area OA is divided is a natural number equal to or greater than 2.

[0109] Thereafter, as shown in the first operation S1, a plurality of first unit paths PA1 may be respectively set with respect to the plurality of unit regions a1, a2, a3, ..., an-1, and an divided in the previous preparation operation S0. Here, the plurality of first unit paths PA1 may be set to correspond to the divided plurality of unit regions a1, a2, a3, ..., an-1, and an, respectively.

[0110] Here, unlike the previous embodiment, each of the plurality of first unit paths PA1 may have at least a portion having a bent shape.

[0111] According to some example embodiments, each of the plurality of first unit paths PA1 may have a shape connecting three sides of a square, but is not necessarily limited thereto and may have a shape connecting two sides of a triangle or a shape connecting one or more sides of a polygon.

[0112] When the plurality of first unit paths PA1 are set to have a shape of one or more sides of a connected polygon as described above, the width of each of the unit areas a1, a2, a3, ..., an-1, and an scanned by the laser beam LB can be reduced. Therefore, the size of the area processed by a single scanning operation can be reduced, so that the number of repeated scanning operations can be increased. That is, the number of repeated micromachining operations can be increased to further improve the process quality.

[0113] Therefore, the plurality of first unit paths PA1 may be set to be spaced apart from each other. However, a possibility that the plurality of first unit paths PA1 overlap each other is not excluded.

[0114] When the laser beam ( Figure 2 LB) along the plurality of first unit paths PA1 set as described above on the substrate ( Figure 2When the laser beam LB is irradiated onto the edge of the opening area OA in a direction of 100) and the laser beam LB travels around the edge of the opening area OA, the first scanning operation can be completed. In the first scanning operation, the second scanning direction D2 relative to the corresponding first unit path PA1 and the first scanning direction D1 relative to the plurality of first unit paths PA1 can be set to partially correspond to each other to effectively perform the operation of irradiating the laser beam LB.

[0115] According to some example embodiments, when the laser beam LB moves from a previous unit path among the first unit paths PA1 to a next unit path, the laser beam LB may be irradiated discontinuously. In other words, when the laser beam LB moves from a previous first unit path PA1 to an immediately next first unit path PA1, a time point at which irradiation of the laser beam LB along the previous first unit path PA1 is completed may be different from a time point at which irradiation of the laser beam LB along the next first unit path PA1 is started.

[0116] Next, as shown in the second operation S2, a plurality of second unit paths PA2 may be set with respect to the plurality of unit regions a1, a2, a3, ..., an-1, and an, respectively. Here, the plurality of second unit paths PA2 may be set to correspond to the plurality of unit regions a1, a2, a3, ..., an-1, and an, respectively, and may have a different path from the plurality of first unit paths PA1.

[0117] According to some example embodiments, each of the plurality of second unit paths PA2 may be set in a region between adjacent first unit paths PA1. Here, each of the plurality of second unit paths PA2 may have a shape that bends and connects one or more sides of a polygon and may be set to be spaced apart from each other.

[0118] The laser beam ( Figure 2 LB) along the plurality of second unit paths PA2 set as described above on the substrate ( Figure 2 Thereafter, when the laser beam LB has traveled around the edge of the opening area OA, the second scanning operation may be completed.

[0119] Next, the first scanning operation of the first operation S1 and the second scanning operation of the second operation S2 may be alternately and repeatedly performed through the third operation S3, the fourth operation S4, etc. Here, since the plurality of first unit paths PA1 as the scanning path of the first scanning operation is different from the plurality of second unit paths PA2 as the scanning path of the second scanning operation, the scanning operation of the second scanning operation may be performed by avoiding at least a portion of the area scanned in the previous first scanning operation.

[0120] According to some example embodiments, an overlapping area between the plurality of first unit paths PA1 and the plurality of second unit paths PA2 may be smaller than in alternative embodiments, and thus an effect of a delay time in a processing area of ​​the first scanning operation during the second scanning operation may be increased.

[0121] After the first scanning operation and the second scanning operation as described above are alternately and repeatedly performed, the edge of the opening area OA may be cut as shown in the 2nth operation S2n. Figure 1 The opening area of ​​10) Figure 1 OA) is formed on the substrate ( Figure 2 100) in the thickness direction ( Figure 2 -z direction) through the base ( Figure 2 100) to the thin film encapsulation layer ( Figure 2 The opening of the layer (300) Figure 2 10H).

[0122] Meanwhile, according to some example embodiments, the plurality of first unit paths PA1 and the plurality of second unit paths PA2 may have at least two unit paths having different lengths or different shapes from each other.

[0123] Next, in terms of the number of unit paths, etc., according to Figure 6 The method of manufacturing a display device according to the embodiment shown in Figure 5 A method for manufacturing a display device according to an embodiment shown in FIG.

[0124] For example, according to Figure 6 In the embodiment shown in FIG. 1 , in addition to the plurality of first unit paths PA1 and the plurality of second unit paths PA2, a plurality of third unit paths PA3 are also set, so that Figure 3 and Figure 5 Unlike the embodiment shown in , the total scanning operation can be 3n times.

[0125] Here, the first scanning operation of the first operation S1, the second scanning operation of the second operation S2, and the third scanning operation of the third operation S3 may be performed alternately and repeatedly, and the alternating order may be the first scanning operation, the second scanning operation, and the third scanning operation, or the first scanning operation to the third scanning operation may be performed randomly.

[0126] The plurality of third unit paths PA3 may have different paths from the plurality of first unit paths PA1 and the plurality of second unit paths PA2, and thus, during the next scanning operation, the effect of the delay time in the processing area of ​​the previous scanning operation may be greater than that of the plurality of third unit paths PA3. Figure 5 The effect of delay time in the embodiment shown in FIG.

[0127] However, the number of scanning operations is not limited to 3n and may be increased to 4n, 5n, etc., depending on the size of the opening formed, the degree to which thermal effects must be prevented, etc.

[0128] As described above, in the method of manufacturing a display device according to some example embodiments, delay time may be reduced during a processing operation, and thus, production yield and throughput may be increased while reducing the occurrence of thermal damage or cracks.

[0129] It should be understood that the embodiments described herein should be considered in a descriptive sense only and not for purposes of limitation. Descriptions of features or aspects within each embodiment should typically be considered as available for other similar features or aspects in other embodiments.

[0130] Although one or more embodiments have been described with reference to the drawings, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope as defined by the claims and their equivalents.

Claims

1. A method for manufacturing a display device, the method comprising the following steps: forming a plurality of display devices in a display area of ​​a substrate, the substrate including an opening area, the display area surrounding the opening area; as well as forming an opening in the opening region, in, The step of forming the opening comprises: performing a first scanning operation, whereby a laser beam is irradiated onto an edge of the opening area in a direction of the substrate and the laser beam moves along a plurality of first unit paths at the edge of the opening area during irradiation, wherein the opening area is divided into a plurality of first unit areas, and the plurality of first unit paths are set to correspond to the plurality of first unit areas, respectively, and are gathered to form a curve having a shape substantially the same as that of the edge of the opening area; and A second scanning operation is performed, whereby the laser beam is irradiated onto the edge of the opening area in the direction of the substrate and during the irradiation, the laser beam moves along a plurality of second unit paths at the edge of the opening area that are different from the plurality of first unit paths, wherein the opening area is divided into a plurality of second unit areas, and the plurality of second unit paths are set to correspond to the plurality of second unit areas, respectively, and are gathered to form a curve having a shape substantially the same as that of the edge of the opening area.

2. The method according to claim 1, further comprising: A thin film encapsulation layer is formed on the substrate to cover the plurality of display devices.

3. The method according to claim 2, wherein: The step of forming the opening includes forming the opening to penetrate the substrate and the thin film encapsulation layer in a thickness direction of the substrate.

4. A method for manufacturing a display device, the method comprising the following steps: forming a plurality of display devices in a display area of ​​a substrate, the substrate including an opening area, the display area surrounding the opening area; as well as forming an opening in the opening region, in, The step of forming an opening in the opening region comprises: Repeating the first scanning operation n times, thereby irradiating the laser beam onto the edge of the opening area in the direction of the substrate and the laser beam moves along n first unit paths at the edge of the opening area during irradiation, wherein the opening area is divided into n first unit areas, and the n first unit paths are set to correspond to the n first unit areas, respectively, and are gathered to form a curve having a shape substantially the same as that of the edge of the opening area, wherein n is a natural number equal to or greater than 2; and The second scanning operation is repeatedly performed n times, thereby irradiating the laser beam onto the edge of the opening area in the direction of the substrate and during the irradiation, the laser beam moves along n second unit paths at the edge of the opening area that are different from the n first unit paths, wherein the opening area is divided into n second unit areas, and the n second unit paths are set to correspond to the n second unit areas, respectively, and are gathered to form a curve having a shape substantially the same as a shape of the edge of the opening area.

5. The method according to claim 4, wherein: The step of forming the opening in the opening region includes alternately and repeatedly performing the first scanning operation and the second scanning operation.

6. The method according to claim 4, wherein: In at least one of the first scanning operation and the second scanning operation, a time point at which irradiation of the laser beam along a previous unit path among adjacent unit paths is completed is different from a time point at which irradiation of the laser beam along a next unit path among the adjacent unit paths is started.

7. The method according to claim 4, wherein: Each of the n first unit paths and the n second unit paths has at least a portion overlapping the edge of the opening area.

8. The method according to claim 4, wherein: The n first unit paths and the n second unit paths have the same shape.

9. The method according to claim 4, wherein: At least one of the n first unit paths and the n second unit paths includes at least two unit paths having different lengths from each other.

10. The method according to claim 4, wherein: The step of forming an opening further includes performing a third scanning operation, thereby irradiating the laser beam onto the edge of the opening area in the direction of the substrate along n third unit paths different from the n first unit paths and the n second unit paths.

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