Deposition system and method for homogenous interface of PECVD metal-doped carbon hardmask

Abstract

A method for depositing a hard mask layer on a substrate comprises: nitriding a first layer of the substrate. The first layer is selected from the group consisting of silicon dioxide and silicon nitride. Depositing an amorphous carbon layer on the nitrided first layer by plasma enhanced chemical vapor deposition (PECVD). Depositing a monolayer on the amorphous carbon layer using a gas mixture and in the absence of plasma, the gas mixture comprising a metal precursor gas with a reducing agent. Depositing a bulk metal doped carbon hard mask layer on the monolayer.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to U.S. Utility Patent Application No. 15 / 816,268, filed on November 17, 2017. The entire disclosure of the above-referenced application is incorporated herein by reference. Technical Field

[0003] The present disclosure relates to substrate processing systems and methods, and more particularly to systems and methods for depositing a metal-doped carbon hard mask on a substrate. Background Art

[0004] The background description provided here is for the purpose of generally presenting the context of the present disclosure. Work by the presently designated inventors to the extent described in this background section and in aspects of the description that could not be determined as prior art at the time of filing the application is neither explicitly nor implicitly admitted to be prior art against the present disclosure.

[0005] During the processing of substrates such as semiconductor wafers, various substrate processing is performed, including performing deposition, patterning, and / or etching. A substrate processing system that performs deposition generally includes a processing chamber having a pedestal. A substrate (such as a semiconductor wafer) can be disposed on the pedestal. A process gas mixture including one or more precursor gases can be introduced into the processing chamber to deposit a film on the substrate. Plasma can be used to activate a chemical reaction.

[0006] Etching can be performed in a processing chamber by introducing an etching gas mixture into the processing chamber. Plasma can also be used during etching. During the etching process, it may be desirable to etch certain areas of the substrate without etching other areas of the substrate. Before etching, a hard mask film can be deposited and patterned on the substrate to prevent specific areas of the substrate under the hard mask film from being etched. The hard mask film must be hard and dense to resist the etching process. After etching is performed, the hard mask film needs to be removed using a hard mask removal process that will not damage the substrate.

[0007] Amorphous carbon and polysilicon based films can be used as hardmasks for etching high aspect ratio (HAR) features. In VNAND and dynamic random access memory (DRAM) applications, the hardmask film must have a high etch selectivity to the underlying dielectric layer. Therefore, the hardmask film must be hard and dense (while balancing ease of removal and etch selectivity) and provide control for hole etch uniformity adjustment.

[0008] Metal-doped carbon hardmasks can also be used for advanced memory patterning applications. Metal-doped carbon hardmasks can be used when the underlying dielectric layer comprises silicon dioxide (SiO2) and / or silicon nitride (Si3N4 or SiN). Metal-doped carbon hardmasks can be deposited in a plasma enhanced chemical vapor deposition (PECVD) chamber using a precursor gas mixture that includes a metal halide such as fluoride (F) and chloride (Cl) and a hydrocarbon (C x H y ) precursor gas, where x and y are integers greater than zero. Hard mask films deposited using precursor gases containing F or Cl species do not bond well with SiO2 or SiN films. Hydroxyl (-OH) groups in the underlying dielectric layer also do not bond well with metal-containing compounds. In addition, F and Cl-based free radicals can generate volatile compounds that are pumped away during processing.

[0009] Some adhesion / interfacial layers such as boron carbide (B4C), carbon (C), boron (B), or tungsten silicide (WSi2) are also evaluated. These materials provide good adhesion at the interface between the metal-doped carbon hard mask and silicon dioxide or silicon nitride. However, these materials are different from the substrate (SiO2 or SiN) and the hard mask (metal-doped carbon), which may cause problems when removing the mask after the pillar etch is completed, or require an additional step to strip the interfacial layer. Summary of the invention

[0010] A method for depositing a hard mask layer on a substrate comprises: nitriding a first layer of the substrate. The first layer is selected from the group consisting of silicon dioxide and silicon nitride. Depositing an amorphous carbon layer on the nitrided first layer by plasma enhanced chemical vapor deposition (PECVD). Depositing a monolayer on the amorphous carbon layer using a gas mixture and in the absence of plasma, the gas mixture comprising a metal precursor gas with a reducing agent. Depositing a bulk metal doped carbon hard mask layer on the monolayer.

[0011] In other features, the amorphous carbon layer has a thickness ranging from 2 nm to 10 nm. The reducing agent comprises a halide-based reducing agent. The first layer comprises silicon dioxide, and the nitriding of the first layer forms a silicon oxynitride interface. The first layer comprises a silicon nitride layer. The silicon nitride layer comprises a native silicon dioxide layer. The nitriding of the first layer forms a silicon oxynitride interface.

[0012] In other features, depositing the amorphous carbon layer includes supplying a gas mixture including a hydrocarbon precursor gas and an inert gas. The metal precursor gas includes a metal selected from the group consisting of tungsten (W), titanium (Ti), molybdenum (Mo), and aluminum (Al).

[0013] In other features, the bulk metal-doped carbon hard mask layer includes the metal.

[0014] In other features, the method is performed within a PECVD chamber.

[0015] In other features, nitriding includes: heating the substrate to a predetermined temperature in a temperature range of 350° C. to 550° C.; and supplying an inert gas mixture including molecular nitrogen.

[0016] A method of depositing a hard mask layer on a substrate, comprising: nitriding a first layer of the substrate. The first layer is selected from the group consisting of silicon dioxide and silicon nitride. The nitriding comprises: heating the substrate to a predetermined temperature in the temperature range of 350° C. to 550° C. and supplying an inert gas mixture comprising molecular nitrogen. The method comprises depositing an amorphous carbon layer on the nitrided first layer by plasma enhanced chemical vapor deposition (PECVD). The method comprises depositing a monolayer on the amorphous carbon layer having a thickness in the range of 2 nm to 10 nm using a gas mixture in the absence of plasma, the gas mixture comprising a metal precursor gas with a halide-based reducing agent. The method comprises depositing a bulk metal doped carbon hard mask layer on the monolayer.

[0017] In other features, the first layer comprises silicon dioxide, and nitriding the first layer forms a silicon oxynitride interface. The first layer comprises silicon nitride, wherein the silicon nitride layer comprises a native silicon dioxide layer, and wherein nitriding the first layer forms a silicon oxynitride interface.

[0018] In other features, the method includes depositing the amorphous carbon layer, wherein depositing the amorphous carbon layer includes: supplying a gas mixture including a carbon hydrogen precursor gas and an inert gas. The metal precursor gas includes a metal selected from the group consisting of tungsten (W), titanium (Ti), molybdenum (Mo), and aluminum (Al). The bulk metal-doped carbon hard mask layer includes the metal.

[0019] In other features, the method is performed within a PECVD chamber.

[0020] Further scope of applicability of the present disclosure will become apparent from the detailed description, claims and drawings.The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The present disclosure will be more fully understood from the detailed description and accompanying drawings, in which:

[0022] Figure 1 is a side cross-sectional view of a substrate comprising a silicon dioxide or silicon nitride layer;

[0023] Figure 2 is a side cross-sectional view of an example of a substrate after nitriding a silicon dioxide or silicon nitride layer, depositing an amorphous carbon layer and a metal monolayer, and depositing a bulk hard mask film according to the present disclosure;

[0024] Figure 3A-Figure 6 Examples illustrating the nitridation of silicon dioxide or silicon nitride layers and the deposition of amorphous silicon carbon layers and metal monolayers;

[0025] Figure 7 A functional block diagram illustrating an example of a substrate processing chamber for nitriding a silicon dioxide or silicon nitride layer, depositing an amorphous carbon layer and a metal monolayer, and depositing a bulk hard mask layer according to the present disclosure; and

[0026] Figure 8 A flow chart illustrating a method for nitriding a silicon dioxide or silicon nitride layer, depositing an amorphous carbon layer and a metal monolayer, and depositing a bulk hard mask layer according to the present disclosure.

[0027] Among the drawings, reference numerals may be repeated to identify similar and / or identical elements. DETAILED DESCRIPTION

[0028] The systems and methods disclosed herein are used to produce a homogenous interface between SiN and SiO2 layers and a bulk metal doped carbon hard mask layer. The homogenous interface disclosed herein has a substantially homogenous composition relative to the bulk metal doped carbon hard mask. The homogenous interface can be used in an integrated process flow designed for DRAM, VNSND and / or back-end of line (BEOL) applications.

[0029] The homogenous interface comprises the same elements as the bulk metal doped carbon hard mask. For example, the homogenous interface comprises carbon (C), hydrogen (H), and a metal such as tungsten (W), titanium (Ti), molybdenum (Mo), or aluminum (Al). In some examples, the homogenous interface is produced in the same processing chamber as the bulk metal doped carbon hard mask. In some examples, the bulk metal doped carbon hard mask comprises tungsten carbide (WC), titanium carbide (TiC), or other bulk metal doped carbon hard mask materials. An example of a process for depositing a bulk metal doped carbon hard mask film can be found in commonly assigned U.S. Patent No. 9,520,295 (“Metal Doping of Amorphous Carbon and Silicon Films Used as Hardmasks in Substrate Processing Systems”), which is incorporated herein by reference in its entirety.

[0030] This homogenous interface can be used for substrates containing exposed SiO2 or SiN films. rN s , where r and s are integers) the interface is made by nitriding the SiO2 or SiN layer. The substrate must be heated and immersed in one or more inert gases to nitridate the SiO2 or SiN layer. In some examples, the inert gas includes molecular nitrogen (N2) and may include one or more other inert gases, such as argon (Ar), helium (He), or a combination of the above gases.

[0031] In some examples, the temperature of the substrate is maintained between 350° C. and 550° C. during the soaking / heating process. In some examples, the pressure of the processing chamber is maintained in the range of 0.8 to 9 Torr during the soaking / heating process.

[0032] In some examples, the substrate is treated with a gas mixture comprising N2 and Ar. In some examples, the nitrogen gas is supplied at a flow rate of 100 sccm (standard cubic centimeters per minute) to 20,000 sccm, and the argon gas is supplied at a flow rate of 100 sccm to 35,000 sccm. In some examples, the N2 gas is supplied at a flow rate of 5,000 sccm and the Ar gas is supplied at a flow rate of 10,000 sccm. As can be understood, the flow rates depend on the volume of the processing chamber.

[0033] The initial soaking / heating causes the exposed SiO2 or SiN layer surface to nitride and create a SiON interface. For substrates containing exposed SiN, a native SiO2 layer is generally formed when the SiN is exposed to air. This soaking / heating step nitridates the native SiO2 layer.

[0034] After the amorphous carbon layer is deposited on the nitrided SiO2 or SiN layer. In some examples, the amorphous carbon layer is deposited by supplying a hydrocarbon precursor gas and a carrier gas into a PECVD chamber and igniting a plasma in the PECVD chamber. In some examples, the precursor gas is supplied during a predetermined time period ranging from 0.5 seconds to 1.5 seconds.

[0035] In some examples, the hydrocarbon precursor gas includes C x H y , where x and y are integers greater than or equal to 1. In some examples, the RF power of the plasma ranges from 400 W to 9 kW at a frequency of 13.56 MHz and from 400 W to 5 kW at a frequency of 430 kHz. In some examples, the chamber pressure is maintained in a predetermined pressure range of 0.8 Torr to 9 Torr. In some examples, the substrate temperature is maintained in a temperature range of 150° C. to 550° C. In some examples, the C3H6 and CH4 gas flow rates are 50 sccm to 1000 sccm.

[0036] In some examples, the carrier gas includes He, Ar, N2, molecular hydrogen (H2), and / or a combination thereof. The thickness and elemental composition of the amorphous carbon layer can be designed based on an integrated process flow. In some examples, the thickness of the amorphous carbon layer ranges from 2 nm to 10 nm.

[0037] The amorphous carbon layer can also be designed to reduce the hydrogen (H) content in the film. The more hydrogen in the amorphous carbon layer, the more metal can diffuse into the amorphous carbon layer in the subsequent steps. Therefore, the amount of hydrogen in the amorphous carbon layer can be used to adjust the metal doping in the amorphous carbon film. For example, if there is about 32% hydrogen atomic percentage in the amorphous carbon film, about 10-20% tungsten metal can be doped. However, if the amorphous carbon film is very dense (for example, the hydrogen atomic percentage is less than 10%), only about 5% tungsten metal can be doped.

[0038] After the amorphous carbon layer is deposited and the plasma is extinguished, the process gas in the process chamber is evacuated. An inert gas is supplied to the process chamber. In some examples, the inert gas includes He because Ar and N2 may modify the homogeneous interface. In the absence of a plasma ignited in the process chamber, a gas mixture is supplied to the process chamber for a predetermined period of time, the gas mixture including a metal-containing precursor gas with a halide-based reducing agent. The process repeats atomic layer deposition (ALD) and produces a metal monolayer. The underlying amorphous carbon layer includes H reduced by the flow of the halide-based metal precursor gas.

[0039] In this example, the homogenous interface contains metal-doped carbon of the same composition as the bulk metal-doped carbon hard mask layer. The homogenous interface allows the vertical structure to be tuned as desired using patterning and provides excellent adhesion to the substrate.

[0040] Reference now Figure 1 to Figure 2 , showing the processing of a substrate according to the present disclosure. Figure 1 In FIG. 1 , a substrate 10 is shown before depositing a bulk metal doped carbon hard mask layer. The substrate 10 comprises one or more underlying layers 20 and a SiO2 or SiN layer 24 disposed on the one or more underlying layers 20. Figure 2 , the substrate is shown after nitridation of the SiO2 or SiN layer (as indicated by reference numeral 24'). An amorphous carbon layer 26 and a metal monolayer 28 are deposited on the nitrided SiO2 or SiN layer 24', as will be further described below. The nitrided SiO2 or SiN layer 24', the amorphous carbon layer 26 and the metal monolayer 28 form a homogenous interface 30. Next, a bulk hard mask layer 32 is deposited on the homogenous interface 30.

[0041] Now refer to Figures 3A to 6 , showing an example of processing of a SiO2 layer prior to deposition of a bulk hard mask layer. FIG. 3A to FIG. 3BAs shown in FIG. 1 , the Si-H component of the SiO2 layer 24 is nitrided to form a silicon oxynitride (SiON) interface, as shown in FIG. Figure 3B The nitride SiO2 layer 24' is shown in FIG. Figure 4 In the embodiment, an amorphous carbon film 26 is deposited on the SiO2 nitride layer 24'. Figure 5 In the present invention, a tungsten (W) precursor gas with a halide-based reducing agent is supplied to the process chamber without igniting a plasma. A metal monolayer 28 (tungsten in this example) is formed as shown in FIG. Figure 6 Next, a bulk metal doped carbon hard mask layer is deposited over the metal monolayer.

[0042] Now refer to Figure 7 , according to the present disclosure, a substrate processing system 100 is shown for nitriding a SiO2 or SiN layer, depositing an amorphous carbon layer and a metal monolayer, and depositing a bulk hard mask layer. Although the foregoing examples are associated with a PECVD system, other plasma-based substrate processing chambers may also be used. Although the present disclosure describes performing nitridation, amorphous carbon layer and metal monolayer deposition, and bulk hard mask layer deposition in the same processing chamber, two or more separate processing chambers may also be used.

[0043] The substrate processing system 100 includes a processing chamber 102 that surrounds the other components of the substrate processing system 100 and contains an RF plasma when in use. The substrate processing system 100 includes an upper electrode 104 and a susceptor 106 including a lower electrode 107. A substrate 108 is disposed on the susceptor 106 between the upper electrode 104 and the lower electrode 107.

[0044] By way of example only, the upper electrode 104 may include a showerhead 109 that introduces and diffuses the process gas. Alternatively, the upper electrode 104 may include a guide plate, and the process gas may be introduced by other means. The lower electrode 107 may be disposed in a non-conductive pedestal. Alternatively, the pedestal 106 may include an electrostatic chuck having a conductive disk as the lower electrode 107.

[0045] When using plasma, the RF generation system 110 generates and outputs an RF voltage to one of the upper electrode and the lower electrode. The other electrode can be grounded by DC power, grounded by AC power, or floating. For example only, the RF generation system 110 can include an RF voltage generator 111 that generates an RF voltage that is fed to the upper electrode 104 or the lower electrode 107 through a matching and distribution network 112.

[0046] An example of a gas delivery system 130 is Figure 7As shown. The gas delivery system 130 includes one or more gas sources 132-1, 132-2 ... and 132-N (collectively referred to as gas sources 132), where N is an integer greater than zero. The gas source provides one or more precursors and mixtures thereof, and vaporized precursors may also be used. The gas source 132 is connected to the manifold 140 through gas valves 134-1, 134-2 ... and 134-N (collectively referred to as gas valves 134) and mass flow controllers 136-1, 136-2 ... and 136-N (collectively referred to as mass flow controllers 136). The output of the manifold is fed to the processing chamber 102. By way of example only, the output of the manifold is fed to the showerhead 109.

[0047] The heater 142 may be connected to a heating coil (not shown) disposed within the susceptor 106 to heat the susceptor 106. The heater 142 may be used to control the temperature of the susceptor 106 and the substrate 108. The valve 150 and the pump 152 may be used to evacuate the reactants from the processing chamber 102. The controller 160 may be used to control various components in the substrate processing system 100. By way of example only, the controller 160 may be used to control the flow of process gases, carrier gases, and precursor gases, ignite and extinguish plasma, remove reactants, monitor chamber parameters, and the like.

[0048] Now refer to Figure 8 , shows a method according to the present disclosure for nitriding a SiO2 or SiN layer, depositing an amorphous carbon layer and a metal monolayer, and depositing a bulk metal doped hard mask layer. At 204, a substrate including an exposed SiO2 or SiN layer is arranged on a susceptor in a process chamber. At 208, the substrate is heated to a predetermined temperature in an inert gas environment. The inert gas environment contains molecular nitrogen and may contain one or more other inert gases. At 216, the substrate is nitrided to produce a SiON interface.

[0049] At 220, amorphous carbon is deposited in a process chamber with a plasma gas mixture comprising a carbon-hydrogen precursor gas and an inert gas. In some examples, a metal-based precursor as described below is not supplied to the process chamber during deposition. In some examples, the amorphous carbon layer is deposited to a thickness in a range between 2 nm and 10 nm. At 222, the process chamber is purged. At 226, a metal precursor gas accompanied by a halide-based reducing agent is supplied to deposit one or more metal monolayers on the amorphous carbon layer. In some examples, the carbon-hydrogen precursor gas is not supplied during the deposition phase. In some examples, the metal precursor gas comprises tungsten hexafluoride (WF6), tetrakis(dimethylamino)titanium (TDMAT), tungsten chloride (WCl), titanium chloride (TiCl), or any other metal-containing precursor with a halide-based reducing agent. In some examples, the optional reducing agent comprises a F or Cl gas species. At 228, a bulk hard mask layer (such as a metal-doped carbon layer) is deposited on the one or more metal monolayers.

[0050] The foregoing description is merely illustrative in nature and is in no way intended to limit the present disclosure, its application or use. The broad teachings of the present disclosure can be implemented in various forms. Therefore, although the present disclosure includes specific examples, the true scope of the present disclosure should not be so limited, because other modifications will become apparent when studying the drawings, specifications and appended claims. As used herein, the phrase "at least one of A, B and C" should be interpreted as meaning the logic (A or B or C) using a non-exclusive logical or (OR), and should not be interpreted as meaning "at least one of A, at least one of B and at least one of C". It should be understood that one or more steps in the method can be performed in different orders (or simultaneously) without changing the principles of the present disclosure.

[0051] In some implementations, the controller is part of a system, which can be part of the above examples. Such a system can include a semiconductor processing device, which includes one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems can be integrated with electronic devices for controlling their operations before, during, and after the processing of semiconductor wafers or substrates. The electronic device can be referred to as a "controller", which can control various components or subcomponents of one or more systems. Depending on the processing requirements and / or system type, the controller can be programmed to control any process disclosed herein, including the delivery of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer in and out of tools and other transfer tools and / or load locks connected to or connected to a specific system through an interface.

[0052] In general, a controller can be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. The integrated circuit can include a chip in the form of firmware that stores program instructions, a digital signal processor (DSP), a chip defined as an application specific integrated circuit (ASIC), and / or one or more microprocessors, or a microcontroller that executes program instructions (e.g., software). The program instructions can be instructions sent to the controller in the form of various individual settings (or program files) that define operating parameters for performing a specific process on or for a semiconductor wafer or system. In some embodiments, the operating parameters can be part of a recipe defined by a process engineer to complete one or more processing steps during the manufacture of one or more (kinds of) layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0053] In some implementations, the controller may be part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller may be in the "cloud" or all or part of a wafer fab host system that may allow remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of a manufacturing operation, check the history of past manufacturing operations, check trends or performance criteria for multiple manufacturing operations, change parameters of a current process, set processing steps to follow the current process, or start a new process. In some examples, a remote computer (e.g., a server) may provide a process recipe to the system via a network (which may include a local network or the Internet). The remote computer may include a user interface that enables input or programming of parameters and / or settings, which are then sent from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control. Thus, as described above, the controller may be distributed, for example, by including one or more discrete controllers networked together and working toward a common purpose (e.g., the process and control described herein). An example of a distributed controller for such a purpose is one or more integrated circuits on a chamber communicating with one or more integrated circuits remotely (e.g., at a platform level or as part of a remote computer), which combine to control the process on the chamber.

[0054] Example systems may include, but are not limited to, plasma etch chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, chamfer edge etch chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etch (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing system that may be associated with or used in the manufacture and / or preparation of semiconductor wafers.

[0055] As described above, depending on one or more processing steps to be performed by the tool, the controller can communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the factory, a host computer, another controller, or tools used in material transport to transport wafer containers to and from tool locations and / or load ports in a semiconductor manufacturing facility.

Claims

1. A method for depositing a hard mask layer on a substrate, comprising: nitriding a first layer of the substrate, wherein the first layer is selected from the group consisting of silicon dioxide and silicon nitride; depositing an amorphous carbon layer on the nitrided first layer by plasma enhanced chemical vapor deposition (PECVD); depositing a monolayer on the amorphous carbon layer using a gas mixture comprising a metal precursor gas with a reducing agent and in the absence of a plasma; and A bulk metal doped carbon hard mask layer is deposited over the monolayer. 2 . The method according to claim 1 , wherein the amorphous carbon layer has a thickness ranging from 2 nm to 10 nm.

3. The method of claim 1, wherein the reducing agent comprises a halide-based reducing agent.

4. The method of claim 1, wherein the first layer comprises silicon dioxide and the nitriding of the first layer forms a silicon oxynitride interface.

5. The method of claim 1, wherein the first layer comprises a silicon nitride layer, wherein the silicon nitride layer comprises a native silicon dioxide layer, and wherein the nitriding of the first layer forms a silicon oxynitride interface. The method of claim 1 , wherein depositing the amorphous carbon layer comprises supplying a gas mixture comprising a carbon-hydrogen precursor gas and an inert gas.

7. The method of claim 1, wherein the metal precursor gas comprises a metal selected from the group consisting of tungsten (W), titanium (Ti), molybdenum (Mo), and aluminum (Al).

8. The method of claim 7, wherein the bulk metal doped carbon hard mask layer comprises the metal.

9. The method of claim 1, wherein the method is performed in a plasma enhanced chemical vapor deposition (PECVD) chamber.

10. The method of claim 1, wherein nitriding comprises: heating the substrate to a predetermined temperature within a temperature range of 350° C. to 550° C.; and An inert gas mixture comprising molecular nitrogen is supplied.

11. A method of depositing a hard mask layer on a substrate, comprising: nitriding the first layer of the substrate, wherein the first layer is selected from the group consisting of silicon dioxide and silicon nitride, and in, The nitridation includes: heating the substrate to a predetermined temperature in a temperature range of 350° C. to 550° C., and supplying an inert gas mixture including molecular nitrogen; depositing an amorphous carbon layer on the nitrided first layer by plasma enhanced chemical vapor deposition (PECVD); depositing a monolayer on the amorphous carbon layer having a thickness in the range of 2 nm to 10 nm using a gas mixture comprising a metal precursor gas with a halide-based reducing agent without plasma; and A bulk metal doped carbon hard mask layer is deposited over the monolayer.

12. The method of claim 11, wherein the first layer comprises silicon dioxide and the first layer is nitrided to form a silicon oxynitride interface.

13. The method of claim 11, wherein the first layer comprises silicon nitride, wherein the silicon nitride layer comprises a native silicon dioxide layer, and wherein the nitriding of the first layer forms a silicon oxynitride interface.

14. The method of claim 11, wherein depositing the amorphous carbon layer comprises supplying a gas mixture comprising a carbon-hydrogen precursor gas and an inert gas.

15. The method of claim 11, wherein the metal precursor gas comprises a metal selected from the group consisting of tungsten (W), titanium (Ti), molybdenum (Mo), and aluminum (Al).

16. The method of claim 15, wherein the bulk metal doped carbon hard mask layer comprises the metal.

17. The method of claim 11, wherein the method is performed in a PECVD chamber.

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