An air intake structure and a plasma etching equipment

Abstract

The present invention relates to the technical field of semiconductor integrated circuit manufacturing, and discloses an air intake structure and plasma etching equipment. That is, by controlling the on / off of a first valve, a plurality of air intake branches arranged side by side can be adjusted to be divided into two parts: one part arranges adjacent air intake branches to introduce one of the air intakes after distribution, and the other part arranges adjacent air intake branches to introduce another air intake after distribution, and then the adjustable combination of air intake branches can be used to achieve the adjustable combination of gas partitioning and indoor gas distribution influence areas, so that the boundary points of different indoor gas distribution influence areas are no longer solidified, which is convenient for users to customize, and finally achieves the purpose of flexibly controlling indoor gas distribution, expands the scope of application, and greatly increases the adjustment ability of plasma etching equipment in terms of uniformity and consistency, which can improve the product quality of etching process.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor integrated circuit manufacturing, and particularly relates to an air inlet structure and a plasma etching apparatus. Background Art

[0002] Etching technology is a technology for selectively etching or stripping the surface of a semiconductor substrate or a thin film covering the surface according to a mask pattern or design requirements in the semiconductor manufacturing process. It is not only a basic manufacturing process for semiconductor devices and integrated circuits, but also applied to the processing of thin film circuits, printed circuits, and other micro patterns. Currently, the etching methods can be divided into wet etching and dry etching. In dry etching, plasma etching is the most common form. Its principle is to form a plasma from the gas exposed in the electron region, thereby generating a gas composed of ionized gas and released high-energy electrons, thus forming plasma or ions. When the ionized gas atoms are accelerated by an electric field, they will release sufficient force to tightly bond with the surface repulsion force to etch the surface. The equipment for realizing the plasma etching process includes an etching reaction chamber, a power supply, and a vacuum part. Its working principle is: the workpiece to be etched is sent into the etching reaction chamber evacuated by a vacuum pump, external gas is introduced and exchanged with the plasma, the plasma reacts on the surface of the workpiece, and the volatile by-products of the reaction are pumped away by the vacuum pump.

[0003] Currently, in the plasma etching technology, there is a very important parameter - namely, the gas distribution in the etching reaction chamber. The difference in this gas distribution directly determines the etching uniformity, consistency, and etching effect. However, in the current plasma etching equipment, a dual-channel air inlet structure is mostly used to regionally adjust the gas distribution. For example Figure 1 As shown, the total intake air is divided into two intake air branches 2 by a gas distributor 1. One of the intake air branches 2 is connected to the middle gas partition 301 (the middle gas partition 301 will communicate with the top of the middle region of the indoor cavity of the etching reaction chamber 20 through the ventilation hole 21, thereby affecting the gas distribution in the indoor middle region), and the other intake air branch 2 is connected to the edge gas partition 302 independent of the middle gas partition 301 (the edge gas partition 302 will communicate with the top of the edge region of the indoor cavity of the etching reaction chamber 20 through another ventilation hole 21, thereby affecting the gas distribution in the indoor edge region). Since the intake air distribution ratio of the two intake air branches 2 is set by the gas distributor 1, the gas distribution in the middle region and the edge region inside the plasma etching chamber (i.e., inside the etching reaction chamber) can be adjusted by adjusting the intake air ratio of the two intake air branches 2.

[0004] However, the above intake structure design has the following disadvantages: Since the demarcation points of different gas distribution influence regions in the chamber (such as the middle region and the edge region) are fixed by the dual-channel intake structure and cannot be customized by the user during use, it is impossible to flexibly control the gas distribution, resulting in a limited scope of application. For example, when the local range that the user needs to control is smaller than the fixed middle region or edge region in the chamber, the control purpose cannot be achieved. Summary of the Invention

[0005] In order to solve the problem that the existing dual-channel intake structure cannot flexibly control the gas distribution in the chamber, resulting in a limited scope of application, the purpose of the present invention is to provide a new intake structure and plasma etching equipment, which can flexibly achieve the purpose of widely adjusting the gas distribution inside the plasma etching chamber, and thus facilitate obtaining an ideal gas distribution.

[0006] The technical solution adopted in the first aspect of the present invention is as follows:

[0007] An intake structure includes a gas distributor and at least three intake branches arranged side by side. Among them, the input end of the gas distributor serves as the total intake port;

[0008] The first ends of each intake branch are respectively and correspondingly connected to an independent gas partition, and the second end of one intake branch is connected to the first output end of the gas distributor, and the second end of another intake branch is connected to the second output end of the gas distributor. The multiple gas partitions are respectively used to correspondingly connect to different gas distribution influence regions in the inner cavity of the etching reaction chamber;

[0009] For two adjacent intake branches in the arrangement, the second end of one intake branch is connected to one end of a first valve, and the second end of the other intake branch is connected to the other end of the first valve.

[0010] Based on the above invention content, a multi-channel intake structure and plasma etching equipment that can flexibly adjust the gas distribution inside the plasma etching chamber in a wide range are provided. That is, by controlling the on / off of the first valve, multiple intake branches arranged side by side can be adjustable divided into two parts: one part of the adjacent intake branches introduces one of the divided intakes, and the other part of the adjacent intake branches introduces the other divided intake. Furthermore, through the adjustable combination of the intake branches, an adjustable combination of the gas partitions and the gas distribution influence regions in the chamber can be achieved, so that the demarcation points of different gas distribution influence regions in the chamber are no longer fixed, which is convenient for the user to customize, and finally the purpose of flexibly controlling the gas distribution in the chamber is realized, expanding the scope of application, and greatly increasing the adjustment ability of the plasma etching equipment in terms of uniformity and consistency, and improving the product quality of the etching process.

[0011] In a possible design, a controller is further included, wherein the output ends of the controller are respectively communicatively connected to the controlled ends of the gas distributor and the controlled end of the first valve.

[0012] In a possible design, for two non-adjacent intake branches, the second end of one of the intake branches communicates with one end of a second valve and communicates with the corresponding first valve through a third valve, and the second end of the other intake branch communicates with the other end of the second valve and communicates with the corresponding first valve through a fourth valve.

[0013] In a possible design, a controller is further included, wherein the output ends of the controller are respectively communicatively connected to the controlled ends of the second valve, the controlled end of the third valve, and / or the controlled end of the fourth valve.

[0014] In a possible design, a flow-limiting washer is arranged in the intake branch.

[0015] In a possible design, the intake branch includes an intake main path and at least one intake sub-path in parallel gas paths, wherein flow-limiting washers are respectively arranged in the intake main path and each intake sub-path, and a fifth valve is further arranged in the intake sub-path.

[0016] In a possible design, a controller is further included, wherein the output end of the controller is communicatively connected to the controlled end of the fifth valve.

[0017] In a possible design, the first valve is an electric valve, a hydraulic valve, or a pneumatic valve.

[0018] The technical solution adopted in the second aspect of the present invention is as follows:

[0019] A plasma etching device includes an intake structure as described in the first aspect and any possible design in the first aspect above, and further includes an etching reaction chamber, a ventilation hole, and a processing table, wherein each gas partition in the intake structure communicates with different regions at the top of the inner cavity of the etching reaction chamber through different ventilation holes, and the processing table is arranged in the inner cavity of the etching reaction chamber.

[0020] In a possible design, an air extraction port is further included, wherein the air extraction port communicates with the bottom of the inner cavity of the etching reaction chamber.

[0021] The beneficial effects of the present invention are as follows:

[0022] (1) The present invention provides a multi-channel air intake structure and plasma etching equipment that can flexibly adjust the gas distribution inside a plasma etching chamber over a wide range, that is, by controlling the on / off of a first valve, a plurality of parallel air intake branches can be adjustably divided into two parts: one part arranges adjacent air intake branches to introduce one of the air intakes after distribution, and the other part arranges adjacent air intake branches to introduce another air intake after distribution. Then, the adjustable combination of air intake branches can be used to achieve an adjustable combination of gas partitioning and indoor gas distribution influence areas, so that the boundary points of different indoor gas distribution influence areas are no longer fixed, which is convenient for users to customize, and ultimately achieves the purpose of flexibly controlling the indoor gas distribution, expands the scope of application, and greatly increases the adjustment ability of the plasma etching equipment in terms of uniformity and consistency, which can improve the product quality of the etching process;

[0023] (2) By designing a valve group including the second valve, the third valve, and the fourth valve, two non-adjacent air intake branches can be introduced into the same air intake path, further improving the adjustable combination flexibility of the air intake branches, thereby further flexibly achieving the adjustable combination of gas partitions and indoor gas distribution influence areas, and ultimately further achieving the purpose of flexibly controlling indoor gas distribution;

[0024] (3) By arranging the flow-limiting gaskets and the fifth valve in the main intake path and the branch intake path, multiple flow-limiting gaskets can be flexibly combined for use, further improving the control accuracy of the intake air flow rate to achieve an ideal flow rate. When multiple intake branches are introduced into the same intake path, different flow-limiting gaskets can be used in combination to make the intake air flow rates of these intake branches different, thereby further achieving the purpose of flexible adjustment of indoor gas distribution. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0026] Figure 1 It is a schematic diagram of the structure of a plasma etching device including a dual-channel air intake structure in the prior art.

[0027] Figure 2 It is a schematic structural diagram of a plasma etching device including a multi-channel air intake structure provided by the present invention.

[0028] Figure 3 It is a schematic structural diagram of the first plasma etching device provided by the present invention including a three-channel air intake structure.

[0029] Figure 4 It is a schematic structural diagram of the second plasma etching equipment including a three-channel air intake structure provided by the present invention.

[0030] In the above-mentioned drawings: 1 - gas distributor; 2 - air intake branch; 221 - main air intake path; 222 - air intake shunt; 201 - current-limiting washer; 3 - gas partition; 401 - first valve; 402 - second valve; 403 - third valve; 404 - fourth valve; 405 - fifth valve; 5 - controller; 20 - etching reaction chamber; 21 - ventilation hole; 22 - processing table; 23 - air extraction port; 30 - wafer. Detailed implementation manners

[0031] The present invention will be further described below in conjunction with the drawings and specific embodiments. It should be noted here that although the description of these embodiments is used to help understand the present invention, it does not constitute a limitation to the present invention. The specific structural and functional details disclosed herein are only used to describe the exemplary embodiments of the present invention. However, the present invention can be embodied in many alternative forms and should not be construed as limited to the embodiments described herein.

[0032] It should be understood that although terms such as first and second may be used herein to describe various units, these units should not be limited by these terms. These terms are only used to distinguish one unit from another. For example, the first unit can be called the second unit, and similarly, the second unit can be called the first unit, without departing from the scope of the exemplary embodiments of the present invention.

[0033] It should be understood that for the term "and / or" that may appear herein, it is only a description of the association relationship of associated objects, indicating that three relationships can exist. For example, A and / or B can represent: A exists alone, B exists alone, and both A and B exist simultaneously; for the term " / and" that may appear herein, it is a description of another association object relationship, indicating that two relationships can exist. For example, A / and B can represent: A exists alone, and both A and B exist; in addition, for the character " / " that may appear herein, generally it represents that the front and rear associated objects are in an "or" relationship.

[0034] It should be understood that when an element is referred to as being "connected", "coupled" or "linked" to another element herein, it can be directly connected or coupled to the other element, or intervening elements may be present. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element herein, it means that no intervening elements are present. Additionally, other words used to describe the relationship between elements (e.g., "between" versus "directly between", "adjacent" versus "directly adjacent", etc.) should be interpreted in a similar manner.

[0035] It should be understood that the terms used herein are for the purpose of describing particular embodiments only and are not intended to limit the exemplary embodiments of the present invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that when the terms "comprises", "comprising", "includes" and / or "including" are used herein, they specify the presence of the stated features, integers, steps, operations, elements and / or components, and do not preclude the presence or addition of one or more other features, numbers, steps, operations, elements, components and / or combinations thereof.

[0036] It should be understood that attention should also be paid to the fact that in some alternative embodiments, the functions / actions that occur may be different from the order shown in the figures. For example, depending on the functions / actions involved, they may actually be executed substantially concurrently, or sometimes the two figures shown consecutively may be executed in the reverse order.

[0037] It should be understood that specific details are provided in the following description to facilitate a complete understanding of the exemplary embodiments. However, those of ordinary skill in the art should understand that the exemplary embodiments can be implemented without these specific details. For example, a system may be shown in block diagrams to avoid obscuring the examples with unnecessary details. In other instances, well-known processes, structures and techniques may not be shown in unnecessary detail to avoid obscuring the exemplary embodiments.

[0038] Embodiment 1

[0039] As Figure 2As shown in the figure, the multi-channel intake structure provided in this embodiment includes a gas distributor 1 and at least three intake branches 2 arranged side by side. Among them, the input end of the gas distributor 1 serves as the total intake port; the first ends of each intake branch 2 are respectively and correspondingly connected to an independent gas partition 3, and the second end of one intake branch 2 is connected to the first output end of the gas distributor 1, and the second end of another intake branch 2 is connected to the second output end of the gas distributor 1. The multiple gas partitions 3 are respectively used to correspondingly connect to different gas distribution influence areas in the etching reaction chamber cavity; for two adjacent intake branches 2 arranged in a row, the second end of one intake branch 2 is connected to one end of a first valve 401, and the second end of the other intake branch 2 is connected to the other end of the first valve 401.

[0040] As Figure 2 shown, in the specific structure of the multi-channel intake structure, the gas distributor 1 is used to divide the total intake into two paths of intake. One path of intake is led out from the first output end, and the other path of intake is led out from the second output end, and the intake ratio of the two paths of intake can be adjusted to achieve the purpose of basic gas distribution adjustment by adjusting the gas distribution ratio. Specifically, it can be realized by using an existing gas distributor. The intake branch 2 is used to connect the gas distributor 1 and the corresponding gas partition 3 in a gas path. The gas partition 3 is used to correspondingly connect to the gas distribution influence areas in the etching reaction chamber cavity, so as to affect the gas distribution in the corresponding gas distribution influence areas in the chamber when introducing external gas. It can be, but is not limited to, a ring cavity structure, and as Figure 2 shown, the multiple gas partitions 3 are arranged in sequence from the center to the periphery, so that the uppermost intake branch 2 can affect the gas distribution in the middlemost gas distribution influence area, and the lowermost intake branch 2 can affect the gas distribution in the outermost gas distribution influence area. The first valve 401 is used to connect two adjacent intake branches 2 when it is turned on, and isolate two adjacent intake branches 2 when it is turned off; specifically, the first valve 401 can be realized by, but is not limited to, valve structures such as an electric valve, a hydraulic valve or a pneumatic valve, and an electromagnetic valve structure can be preferably used.

[0041] Thus, through the detailed description of the aforementioned multi-channel air intake structure, a multi-channel air intake structure is provided that can flexibly adjust the gas distribution inside the plasma etching chamber over a wide range, that is, through the on / off control of the first valve, multiple parallel air intake branches can be adjustably divided into two parts: one part arranges adjacent air intake branches to introduce one of the air intakes after distribution, and the other part arranges adjacent air intake branches to introduce the other air intake after distribution. Then, the adjustable combination of air intake branches can be used to achieve an adjustable combination of gas partitioning and indoor gas distribution influence areas, so that the boundary points of different indoor gas distribution influence areas are no longer solidified, which is convenient for users to customize, and ultimately achieves the purpose of flexible control of indoor gas distribution, expands the scope of application, and greatly increases the adjustment ability of plasma etching equipment in terms of uniformity and consistency, which can improve the product quality of the etching process. In addition, the air intake branch 2 (i.e., which is arranged first) is preferably Figure 2 The second end of the uppermost intake branch 2) is connected to the first output end of the gas distributor 1, and the intake branch 2 (i.e. Figure 2 The second end of the lowest air inlet branch 2) is connected to the second output end of the gas distributor 1 to achieve the purpose of maximum adjustability.

[0042] The optimized device further comprises a controller 5, wherein the output end of the controller 5 is respectively connected to the controlled end of the gas distributor 1 and the controlled end of the first valve 401 for communication. Figure 2 As shown, the controller 5 is used to realize the purpose of automatic control of the gas distributor 1 and the first valve 401 based on the user's customized control program, further improving the degree of automation of the multi-channel air intake structure; the controller 5 can be implemented by, but is not limited to, a programmable logic device or a single-chip microcomputer chip of the STM32F103 series.

[0043] like Figure 2 As shown, this embodiment also provides a plasma etching device, including the air intake structure as described above, and also including an etching reaction chamber 20, air vents 21 and a processing table 22, wherein each gas partition 3 in the air intake structure is connected to different areas of the top of the inner cavity of the etching reaction chamber 20 through different air vents 21, and the processing table 22 is arranged in the inner cavity of the etching reaction chamber 20.

[0044] like Figure 2As shown, in the specific structure of the plasma etching device, the gas inlet structure is used to introduce external gas for exchanging with plasma. The etching reaction chamber 20 is used to provide a place for plasma etching reaction, and its inner cavity needs to be evacuated by a vacuum pump before introducing external gas. The vent hole 21 is used to connect the corresponding gas partition 3 with the corresponding gas distribution influence area, so that the introduced gas can affect the gas distribution in the corresponding gas distribution influence area. The processing table 22 is used to carry the workpiece to be processed (for example Figure 2 The wafer 30 in the workpiece is placed in the workpiece so that the plasma can etch the workpiece surface. The etching reaction chamber 20, the vent hole 21 and the processing platform 22 can all be implemented using existing corresponding structures.

[0045] Optimized, such as Figure 2 As shown, the plasma etching device further includes a gas extraction port 23, wherein the gas extraction port 23 is connected to the bottom of the inner cavity of the etching reaction chamber 20. The gas extraction port 23 is used to connect to a vacuum pump so as to achieve the purpose of evacuation before introducing external gas, and after introducing external gas, the volatile byproducts of the reaction can be extracted by the vacuum pump.

[0046] In summary, the multi-channel air intake structure and plasma etching equipment provided by this embodiment have the following technical effects:

[0047] (1) This embodiment provides a multi-channel air intake structure and plasma etching equipment that can flexibly adjust the gas distribution inside a plasma etching chamber over a wide range, that is, by controlling the on / off control of a first valve, a plurality of parallel air intake branches can be adjustably divided into two parts: one part arranges adjacent air intake branches to introduce one of the air intakes after distribution, and the other part arranges adjacent air intake branches to introduce the other air intake after distribution. Then, through the adjustable combination of air intake branches, an adjustable combination of gas partitioning and indoor gas distribution influence areas can be achieved, so that the boundary points of different indoor gas distribution influence areas are no longer fixed, which can be convenient for users to customize, and ultimately the purpose of flexibly controlling the indoor gas distribution is achieved, the scope of application is expanded, and the adjustment capability of the plasma etching equipment in terms of uniformity and consistency is greatly increased, which can improve the product quality of the etching process.

[0048] Embodiment 2

[0049] like Figure 3As shown, based on the technical solution of Example 1, this embodiment specifically proposes a three-channel air intake structure and a plasma etching device including the three-channel air intake structure, that is, the three-channel air intake structure includes a first air intake branch, a second air intake branch and a third air intake branch arranged side by side from top to bottom, when the upper first valve 401 is turned on and the lower first valve 401 is turned off, the first air intake branch and the second air intake branch introduce the air intake from the first output end of the gas distributor 1, and the third air intake branch introduces the air intake from the second output end of the gas distributor 1, thereby expanding the gas distribution influence area in the middle of the room and reducing the gas distribution influence area at the edge of the room; when the upper first valve 401 is turned off and the lower first valve 401 is turned on, the first air intake branch introduces the air intake from the first output end of the gas distributor 1, and the second air intake branch and the third air intake branch introduce the air intake from the second output end of the gas distributor 1, thereby reducing the gas distribution influence area in the middle of the room and expanding the gas distribution influence area at the edge of the room. Therefore, by controlling the on / off of the first valve, users can easily customize the dividing points of the areas affected by different gas distributions in the room, ultimately achieving the purpose of flexibly controlling the indoor gas distribution, expanding the scope of application, and greatly increasing the adjustment ability of the plasma etching equipment in terms of uniformity and consistency, which can improve the product quality of the etching process.

[0050] The technical details, technical principles and technical effects of this embodiment can be directly derived from the first embodiment and will not be elaborated here.

[0051] Embodiment 3

[0052] like Figure 4 As shown, based on the technical solution of Example 2, this embodiment further specifically proposes another three-channel air intake structure and a plasma etching device including the three-channel air intake structure, which is different from Example 2 in that: for the two non-adjacent air intake branches 2 (for example, the top first air intake branch and the bottom third air intake branch), the second end of one of the air intake branches 2 is connected to one end of the second valve 402 and is connected to the corresponding first valve 401 through the third valve 403, and the second end of the other air intake branch 2 is connected to the other end of the second valve 402 and is connected to the corresponding first valve 401 through the fourth valve 404.

[0053] like Figure 4As shown, the second valve 402 is used to connect two non-adjacent intake branches 2 when it is open, and isolate two non-adjacent intake branches 2 when it is closed; the third valve 403 and the fourth valve 404 are respectively used to connect the second end of the corresponding intake branch 2 to the first valve 401 of the corresponding intake branch 2 when they are open, so that when the second valve 402 is closed, the second end of the corresponding intake branch 2 can be connected to another adjacent intake branch 2 through the first valve 401, and isolate the corresponding intake branch 2 from the first valve 401 of the corresponding intake branch 2 when they are closed. Specifically, the second valve 402, the third valve 403 or the fourth valve 404 can also but is not limited to adopt valve structures such as electric valves, hydraulic valves or pneumatic valves, and preferably adopt electromagnetic valve structures. Through the valve group design of the foregoing second valve 402, third valve 403 and fourth valve 404, two non-adjacent intake branches 2 can be introduced into the same intake path, further improving the adjustable combination flexibility of the intake branches. For example, by controlling the upper first valve 401 to be closed, the lower first valve 401 to be open, the second valve 402 to be open, the third valve 403 to be open and the fourth valve 404 to be closed, the first intake branch and the third intake branch can be introduced with intake air from the first output end of the gas distributor 1, and the second intake branch can be introduced with intake air from the second output end of the gas distributor 1, further flexibly achieving the adjustable combination of the gas partition and the area affecting the indoor gas distribution, and finally further realizing the purpose of flexibly controlling the indoor gas distribution.

[0054] Optimally, a controller is further included. Among them, the output end of the controller is respectively communicatively connected to the controlled end of the second valve 402, the controlled end of the third valve 403 and the controlled end of the fourth valve 404. The controller ( Figure 4 not shown) is also used to achieve the purpose of automatic control of the second valve 402, the third valve 403 and / or the fourth valve 404 based on the user's custom control program, further improving the automation degree of the three-channel intake structure.

[0055] Optimally, a flow-limiting washer 201 is arranged in the intake branch 2. As Figure 4 shown, the flow-limiting washer 201 is used to limit the flow rate of the intake air, so that the external gas enters the corresponding gas partition 3 and the corresponding area affecting the gas distribution in the etching reaction chamber cavity at an ideal flow rate. In addition, the flow-limiting washer 201 can be realized by using an existing structure.

[0056] Optimized, the intake branch 2 includes a main intake path 221 and at least one sub-intake path 222 with parallel gas paths. Among them, flow-limiting washers 201 are respectively arranged in the main intake path 221 and each sub-intake path 222, and a fifth valve 405 is also arranged in the sub-intake path 222. As Figure 4 shown, for example, the uppermost first intake branch includes a main intake path 221 and two sub-intake paths 222 with parallel gas paths, while the middle second intake branch includes a main intake path 221 and a sub-intake path 222. The fifth valve 405 is used to enable the flow-limiting washer 201 in the corresponding sub-intake path 222 when it is turned on, and to disable the flow-limiting washer 201 in the corresponding sub-intake path 222 when it is turned off; specifically, the fifth valve 405 can also but is not limited to be implemented by valve structures such as electric valves, hydraulic valves or pneumatic valves, and preferably an electromagnetic valve structure can also be used. Through the arrangement of the aforementioned flow-limiting washers 201 and the fifth valve 405 in the main intake path 221 and the sub-intake paths 222, multiple flow-limiting washers 201 can be flexibly combined and used, further improving the control accuracy of the intake air flow rate to make it reach the ideal flow rate, and when multiple intake branches 2 introduce the same intake air, different combinations of flow-limiting washers 201 can be used to make the intake air flow rates of these intake branches different, further achieving the purpose of flexibly adjusting the indoor gas distribution. In addition, different intake branches 2 can have the same main intake path and sub-path structure, or can have different main intake path and sub-path structures, as Figure 4 shown.

[0057] Further optimized, it further includes a controller, among which, the output end of the controller is communicatively connected to the controlled end of the fifth valve 405. The controller ( Figure 4 not shown in the figure) is also used to achieve the purpose of automatically controlling the fifth valve 405 based on the user's custom control program, further improving the automation degree of the three-channel intake structure.

[0058] Based on the technical effects of the first embodiment, the technical effects of this embodiment also include the following:

[0059] (1) Through the valve group design including the second valve, the third valve and the fourth valve, it is possible to introduce the same intake air into two non-adjacent intake branches, further improving the adjustable combination flexibility of the intake branches, and then further flexibly achieving the adjustable combination of the gas partition and the area affected by the indoor gas distribution, and finally further realizing the purpose of flexibly controlling the indoor gas distribution;

[0060] (2)By arranging the flow-limiting washers and the fifth valve in the main air intake path and the branched air intake paths, multiple flow-limiting washers can be used in a flexible combination, further improving the control accuracy of the air intake flow rate to achieve the ideal flow rate. Moreover, when introducing the same air intake into multiple branched air intake paths, different combinations of flow-limiting washers can be used to make the air intake flow rates of these branched air intake paths different, further achieving the purpose of flexibly adjusting the indoor gas distribution.

[0061] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements on some of the technical features. These modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

[0062] Finally, it should be noted that the present invention is not limited to the above optional embodiments, and any person can obtain other various forms of products under the inspiration of the present invention. The above specific embodiments should not be construed as limiting the protection scope of the present invention, and the protection scope of the present invention should be defined by the claims, and the specification can be used to interpret the claims.

Claims

1. An air intake structure, characterized in that, it includes a gas distributor (1) and at least three air intake branches (2) arranged side by side. Among them, the input end of the gas distributor (1) serves as the total air intake port; the first ends of each of the air intake branches (2) are respectively and correspondingly connected to an independent gas partition (3), and the second end of one of the air intake branches (2) is connected to the first output end of the gas distributor (1), and the second end of another air intake branch (2) is connected to the second output end of the gas distributor (1). The multiple gas partitions (3) are respectively used to correspondingly connect to different gas distribution influence regions in the inner cavity of the etching reaction chamber; For two adjacent air intake branches (2) arranged, one end of the second end of one of the air intake branches (2) is connected to one end of a first valve (401), and the second end of the other air intake branch (2) is connected to the other end of the first valve (401); For two non - adjacent air intake branches (2) arranged, one end of the second end of one of the air intake branches (2) is connected to one end of a second valve (402) and is connected to the corresponding first valve (401) through a third valve (403), and the second end of the other air intake branch (2) is connected to the other end of the second valve (402) and is connected to the corresponding first valve (401) through a fourth valve (404); the air intake branch (2) includes an air intake main path (221) and at least one air intake sub - path (222) with parallel gas paths. Among them, a flow - limiting washer (201) is respectively arranged in the air intake main path (221) and each air intake sub - path (222), and a fifth valve (405) is also arranged in the air intake sub - path (222).

2. The air intake structure according to claim 1, characterized in that, it further includes a controller (5). Among them, the output end of the controller (5) is respectively communicatively connected to the controlled end of the gas distributor (1) and the controlled end of the first valve (401).

3. The air intake structure according to claim 2, characterized in that, the output end of the controller (5) is also respectively communicatively connected to the controlled end of the second valve (402), the controlled end of the third valve (403) and / or the controlled end of the fourth valve (404).

4. The air intake structure according to claim 2, characterized in that, the output end of the controller (5) is also communicatively connected to the controlled end of the fifth valve (405).

5. The air intake structure according to claim 1, characterized in that, the first valve (401) adopts an electric valve, a hydraulic valve or a pneumatic valve.

6. A plasma etching device, characterized in that, it includes the air intake structure according to any one of claims 1 - 5, and also includes an etching reaction chamber (20), a ventilation hole (21) and a processing table (22). Among them, each gas partition (3) in the air intake structure is respectively connected to different regions at the top of the inner cavity of the etching reaction chamber (20) through different ventilation holes (21), and the processing table (22) is arranged in the inner cavity of the etching reaction chamber (20).

7. The plasma etching equipment according to claim 6, characterized in that, it further includes an air extraction port (23), wherein the air extraction port (23) communicates with the bottom of the inner cavity of the etching reaction chamber (20).

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