New device and method for simultaneous complete equal-optical-path confocal imaging detection of adjacent double-sided crystal grains of semiconductor cooling devices

Abstract

The invention discloses a new device and method for detecting confocal imaging of adjacent double sides of semiconductor refrigeration device grains at the same time with completely equal optical path. A specially designed reflection transfer prism or a specially designed cubic beam splitter / image combiner is respectively used in the adjacent double-sided imaging light path to realize the detection of spatial separation of double-sided imaging. The new device can realize confocal imaging detection of adjacent double sides of semiconductor grains at the same time with completely equal optical path, but does not need to use a telecentric imaging lens with a large field of view or a polarization optical element or a CMOS polarization camera or a glass parallel plate image separation optical element, thereby effectively simplifying the optical and precision mechanical structure of the detection system and reducing the cost of the detection device.

Description

Technical field:

[0002] The invention belongs to the field of optical detection and machine vision, and in particular relates to a new device and method for simultaneous and complete equal-optical-path confocal imaging detection of adjacent double sides of a semiconductor cooling device crystal grain. Background technology:

[0004] Completely equal-path confocal imaging of the optical path for double-sided imaging detection of semiconductor crystals is one of the main core technical issues that need to be solved. Based on different methods, the patent applications submitted for the research on simultaneous defect imaging detection technology on adjacent double sides of semiconductor crystals include:

[0005] Figure 1 The application number is 202010171706X. The optical detection device and method proposed in the application have solved the problem of "quasi" confocal imaging detection of adjacent surfaces of semiconductor grains. However, there is still an optical path difference between the adjacent double-sided imaging light paths. In order to obtain simultaneous confocal imaging of adjacent surfaces, it is necessary to compensate for this small optical path difference by selecting a telecentric imaging lens with a sufficiently large depth of field. Therefore, it is necessary to find a new way to achieve completely equal-optical-path confocal imaging detection of adjacent surfaces of grains.

[0006] Figure 2 A new method for simultaneous and completely equal-path confocal imaging of adjacent surfaces of semiconductor grains based on dual-color separation imaging is proposed. Figure 3 , Figure 4 Using a polarization beam splitter, two illumination beams with mutually perpendicular polarization directions are obtained to illuminate the adjacent two sides of the semiconductor grain to be tested respectively. A method based on polarization light separation imaging (abbreviated as "polarization imaging") is further proposed: or a polarization camera is directly used to realize simultaneous and completely equal-optical confocal imaging detection of adjacent surfaces of semiconductor grains (such as Figure 3 or combined with a "polarization splitting prism assembly" and using a common CMOS or CCD camera to achieve simultaneous and completely equal-path confocal imaging detection of adjacent surfaces of semiconductor grains (as shown in Figure 4 as shown).

[0007] However, the above-mentioned devices and methods either use polarization optical elements or use CMOS polarization cameras, which makes the optical and precision mechanical structures of the detection system more complicated and increases the cost of the detection device. Summary of the invention:

[0009] The purpose of the present invention is to provide a new device and method for simultaneous and complete equal-optical-path confocal imaging detection of adjacent double sides of semiconductor refrigeration device grains. The device and method can obtain simultaneous and complete equal-optical-path confocal imaging detection of adjacent double sides of semiconductor grains, but do not need to use polarization optical elements and polarization CMOS sensors (cameras), or color cameras and their additional image processing, effectively improving the cost-effectiveness and detection efficiency of the detection device.

[0010] The invention discloses a novel device for simultaneous and completely equal-optical-path confocal imaging detection of adjacent double-sided surfaces of semiconductor cooling device crystal grains, which is characterized in that it comprises a CMOS or CCD camera, a telecentric imaging lens, a cubic beam splitter and a combiner, a semiconductor crystal grain and a transparent glass stage for holding the semiconductor crystal grain, a sky right-angle image rotation prism and a side right-angle image rotation prism are respectively arranged on the optical path between the semiconductor crystal grain and the cubic beam splitter and the combiner, the side right-angle image rotation prism and the sky right-angle image rotation prism are respectively located on the front side of the semiconductor crystal grain and directly above the sky surface, and the cubic beam splitter and the combiner are at the same horizontal height as the sky right-angle image rotation prism; the side right-angle image rotation prism and the cubic beam splitter and the combiner are located on the optical axis of the telecentric imaging lens, and at the same time, the first right-angle surface of the side right-angle image rotation prism is perpendicular to the optical axis of the telecentric imaging lens and is opposite to the first surface of the cubic beam splitter and the second ... The angle surface is parallel to and opposite to the side surface of the semiconductor crystal grain, and the inclined surface of the side right-angle image rotation prism is arranged to be inclined with the optical axis of the telecentric imaging lens; the first right-angle surface of the sky right-angle image rotation prism is parallel to the optical axis of the telecentric imaging lens and is opposite to the second surface of the cubic beam splitter and image combiner, the second right-angle surface of the sky right-angle image rotation prism is parallel to and opposite to the sky surface of the semiconductor crystal grain, and the inclined surface of the sky right-angle image rotation prism is arranged to be inclined with the optical axis of the telecentric imaging lens; the first surface and the second surface of the cubic beam splitter and image combiner form an optical wedge angle with the normal surface and the optical axis of the telecentric imaging lens respectively, and a coaxial external illumination light source is arranged beside the fourth surface opposite to the second surface of the cubic beam splitter and image combiner, and the sky surface and the side surface of the semiconductor crystal grain are respectively imaged on the camera sensor surface with complete equal optical path confocal imaging through the sky right-angle image rotation prism, the side right-angle image rotation prism and the cubic beam splitter and image combiner, so as to obtain independent images of both sides of the semiconductor crystal grain on a CMOS or CCD camera.

[0011] Furthermore, the optical wedge angles of the first and second surfaces of the above-mentioned cubic beam splitter and image combiner are α 1 and α 2 , α 1 and α 2 The two beam splitters that form the cubic beam splitter combiner deviate from the right angle of the wedge angle. The four angles of the cubic beam splitter combiner are 90°, 90°-α 1 , 90°, 90°+α 2； Wedge angle α 1 and α 2 The double-sided imaging beams are respectively displaced γ to the two sides of the optical axis of the cubic beam splitter and combiner. 1 and γ 2 , and γ 1 With γ 2 The size depends on the refractive index n of the cubic beam splitter and combiner glass and the equivalent glass wedge angle α 1 With α 2 ; The images of adjacent faces of semiconductor grains output from the cubic beam splitter and combiner are separated in space, and the wedge angle α 1The resulting angular displacement γ 1 = (n-1) x α 1 , γ 2 = (n-1) x α 2 , and the angular separation of the two-sided images is γ=γ 1 +γ 2 ; The distance between the center of the cubic beam splitter and combiner and the center of the inclined surface of the side reflection image transfer prism is D / 2+d, and the working distance of the side imaging light path is WD=D / 2+d / 2. The cubic beam splitter and combiner and the inclined surface of the ceiling reflection image transfer prism are at the same horizontal height, and the distance between them is D / 2+d. The working distance of the ceiling imaging light path is WD=D / 2+d / 2. D is the width of the transparent glass stage, and d is the length of the right-angle side of the prism.

[0012] Furthermore, the center of the cubic beam splitter and combiner, the center of the reflection surface of the two right-angle image-transfer prisms, and the center of the semiconductor grain are connected to form a square symmetrical optical path structure with a side length of D / 2+d=37.5mm, where D is the width of the transparent glass stage and d is the side length of the prism; the size of the cubic beam splitter and combiner is 15*15*15mm, aligned with the sides of the sky and side right-angle image-transfer prisms, and the wedge angle α of the equivalent glass wedge of the beam splitter prism of the cubic beam splitter and combiner is 1 =α 2 = 2°, the four angles of the cubic beam splitter and combiner are 90°, 88°, 90°, 92°

[0013] ; The glass material of the cubic beam splitter and combiner is K9, and the angular displacement γ is calculated 1 =γ 2 = (n-1) x α 2 =1.03°, the resulting double image angle displacement is γ=2.06°, the corresponding space δ=γxL=2.21mm, focal length f=51.5mm, WD=110 mm, (i is the thickness of the grain).

[0014] Furthermore, the size of the above-mentioned celestial reflection image relay prism is 15*15*15mm, the size of the side reflection image relay prism is 15*15*15mm, and the size of the cubic beam splitter and image combiner is 15*15*15mm; the working distance of the celestial imaging light path WD=D / 2+d / 2=30mm, the working distance of the side imaging light path WD=D / 2+d / 2=30mm, and the double image angle displacement error caused by the angular manufacturing tolerance (≤15 arc seconds) of the cubic beam splitter and image combiner and the image relay prism should be controlled within 2 arc minutes.

[0015] The invention discloses a method for detecting confocal imaging of adjacent double sides of semiconductor cooling device grains at the same time with completely equal optical path. The method is characterized in that: the new device for detecting confocal imaging of adjacent double sides of semiconductor cooling device grains at the same time with completely equal optical path comprises a CMOS or CCD camera, a telecentric imaging lens, a cubic beam splitter and a combiner, semiconductor grains and a transparent glass stage for holding the semiconductor grains arranged in the direction of the optical path; a sky right-angle image rotation prism and a side right-angle image rotation prism are respectively arranged on the optical path between the semiconductor grains and the cubic beam splitter and the combiner; the side right-angle image rotation prism and the sky right-angle image rotation prism are respectively located on the front side of the semiconductor grains and directly above the sky; the cubic beam splitter and the combiner are at the same horizontal height; the side right-angle image rotation prism and the cubic beam splitter and the combiner are located on the optical axis of the telecentric imaging lens; at the same time, the first right-angle surface of the side right-angle image rotation prism is perpendicular to the optical axis of the telecentric imaging lens and is opposite to the first surface of the cubic beam splitter and the combiner. , the second right-angle surface of the side right-angle image-turning prism is parallel to and opposite to the side surface of the semiconductor crystal grain, and the inclined surface of the side right-angle image-turning prism is inclined to the optical axis of the telecentric imaging lens; the first right-angle surface of the sky right-angle image-turning prism is parallel to the optical axis of the telecentric imaging lens and opposite to the second surface of the cubic beam splitter and combiner, the second right-angle surface of the sky right-angle image-turning prism is parallel to and opposite to the sky surface of the semiconductor crystal grain, and the inclined surface of the sky right-angle image-turning prism is inclined to the optical axis of the telecentric imaging lens; the first surface and the second surface of the cubic beam splitter and combiner form an optical wedge angle with the normal surface and the optical axis of the telecentric imaging lens respectively, and a coaxial external illumination light source is provided beside the fourth surface opposite to the second surface of the cubic beam splitter and combiner, and the sky surface and the side surface of the semiconductor crystal grain are respectively imaged on the camera sensor surface with complete equal optical path confocal imaging through the sky right-angle image-turning prism, the side right-angle image-turning prism, and the cubic beam splitter and combiner, so as to obtain independent images of both sides of the semiconductor crystal grain on the CMOS or CCD camera; during detection,

[0016] Double-sided lighting light path:

[0017] The coaxial external illumination light source is divided into two illumination beams when passing through the cubic beam splitter and combiner: one beam of light is reflected by the top surface and then transferred to the image transfer prism to illuminate the top surface of the semiconductor crystal grain to be tested on the glass object transfer disk; and the other illumination beam is reflected by the side surface and then transferred to the image transfer prism to illuminate the side surface of the semiconductor crystal grain to be tested. The two illumination beams illuminate two adjacent surfaces of the semiconductor crystal grain respectively.

[0018] Imaging detection optical path:

[0019] The two adjacent surfaces of the illuminated semiconductor crystal grain produce diffuse light. The imaging beam of the semiconductor crystal grain is transferred by the right-angle image transfer prism, and then reflected by the cubic beam splitter and combiner to reach the reference output surface. The outgoing imaging beam has an angular displacement γ to one side of the optical axis. 1The imaging beam on the side of the semiconductor crystal passes through the side right-angle image rotation prism, and then transmits through the cubic beam splitter and combiner to reach the reference output surface. The outgoing imaging beam also produces an angular displacement γ to the other side of the optical axis. 2 The angular displacement of adjacent faces output from the cubic beam splitter / combiner is γ = γ 1 +γ 2 The corresponding spacing between adjacent grain surfaces is δ=γx L, where L is the distance between the reflective image transfer prism and the equivalent object surface, and independent images of both surfaces are obtained on the CMOS or CCD camera. The cubic beam splitter and combiner can produce an expected angular displacement γ while combining the images. 1 and γ 2 , which is functionally equivalent to the integration of an image combiner and a glass wedge that can produce angular displacement of light.

[0020] The invention discloses a novel device for simultaneous complete equal-optical-path confocal imaging detection of adjacent double-sided surfaces of semiconductor cooling device crystal grains, characterized in that it comprises a CMOS or CCD camera, a telecentric imaging lens, a cubic beam splitter and image combiner, a semiconductor crystal grain and a transparent glass stage for holding the semiconductor crystal grain, a sky reflection image transfer prism and a side reflection image transfer prism are respectively arranged on the optical path between the semiconductor crystal grain and the cubic beam splitter and image combiner, the side reflection image transfer prism and the sky reflection image transfer prism are respectively located on the front side of the semiconductor crystal grain and directly above the sky surface, the cubic beam splitter and image combiner are at the same horizontal height; the side reflection image transfer prism and the cubic beam splitter and image combiner are located on the optical axis of the telecentric imaging lens, and at the same time, the first surface of the side reflection image transfer prism forms an optical wedge angle with the normal surface of the optical axis of the telecentric imaging lens, and forms an optical wedge angle with the cubic beam splitter and image combiner. The first surface of the beam combiner is opposite, the second surface of the side reflection image transfer prism is parallel to the side surface of the semiconductor crystal grain, and the inclined surface of the side reflection image transfer prism is inclined to the optical axis of the telecentric imaging lens; the first surface of the sky reflection image transfer prism forms an optical wedge angle with the optical axis of the telecentric imaging lens and is opposite to the second surface of the cubic beam splitter image combiner, the second surface of the sky reflection image transfer prism is parallel to the sky surface of the semiconductor crystal grain, and the inclined surface of the sky reflection image transfer prism is inclined to the optical axis of the telecentric imaging lens; a coaxial external illumination light source is arranged beside the fourth surface opposite to the second surface of the cubic beam splitter image combiner, and the sky surface and the side surface of the semiconductor crystal grain are respectively imaged on the camera sensor surface with complete equal optical path confocal imaging through the sky reflection image transfer prism, the side reflection image transfer prism and the cubic beam splitter image combiner, so as to obtain independent images of both sides of the semiconductor crystal grain on a CMOS or CCD camera.

[0021] The invention discloses a novel device for simultaneous and completely equal-optical-path confocal imaging detection of adjacent double-sided surfaces of semiconductor cooling device crystal grains, which is characterized in that: it comprises a CMOS or CCD camera, a telecentric imaging lens, a cubic beam splitter and image combiner, a semiconductor crystal grain and a transparent glass stage for holding the semiconductor crystal grain, a sky reflection image transfer prism and a side reflection image transfer prism are respectively arranged on the optical path between the semiconductor crystal grain and the cubic beam splitter and image combiner, the side reflection image transfer prism and the sky reflection image transfer prism are respectively located on the front side of the semiconductor crystal grain and directly above the sky surface, the cubic beam splitter and image combiner are at the same horizontal height; the side reflection image transfer prism and the cubic beam splitter and image combiner are located on the optical axis of the telecentric imaging lens, and the second surface of the side reflection image transfer prism forms an optical wedge angle with the optical axis of the telecentric imaging lens, and is at the same horizontal height with the side reflection image transfer prism of the semiconductor crystal grain. The first surface of the side reflection image transfer prism is parallel to the first surface of the cubic beam splitter image combiner, and the inclined surface of the side reflection image transfer prism is tilted to the optical axis of the telecentric imaging lens; the second surface of the sky reflection image transfer prism forms an optical wedge angle with the normal surface of the optical axis of the telecentric imaging lens and is opposite to the sky surface of the semiconductor crystal grain, the first surface of the sky reflection image transfer prism is parallel to the second surface of the cubic beam splitter image combiner, and the inclined surface of the sky reflection image transfer prism is tilted to the optical axis of the telecentric imaging lens; a coaxial external illumination light source is arranged beside the fourth surface opposite to the second surface of the cubic beam splitter image combiner, and the sky surface and the side surface of the semiconductor crystal grain are respectively imaged on the camera sensor surface with complete equal optical path confocal imaging through the sky reflection image transfer prism, the side reflection image transfer prism and the cubic beam splitter image combiner, so as to obtain independent images of the two sides of the semiconductor crystal grain on a CMOS or CCD camera.

[0022] Furthermore, the optical wedge angle between the top reflection image transfer prism and the first surface of the side reflection image transfer prism is α 1 and α 2 , which is the degree of deviation of the first surface of the two reflection image transfer prisms from the right angle. The three angles of the celestial reflection image transfer prism are 45°, 90°-α 1 , 45°+α 1； The three angles of the side reflection prism are 45°, 90°+α 2 、45°-α 2 , wedge angle α 1 and α 2 The double-sided imaging beams are respectively displaced γ to the two sides of the optical axis of the cubic beam splitter and combiner. 1 and γ 2 , and γ 1 With γ 2 The size depends on the refractive index n of the reflection image prism glass and the equivalent glass wedge angle α 1 With α 2 ; The images of adjacent faces of semiconductor grains output from the cubic beam splitter and combiner are separated in space, and the wedge angle α 1 The resulting angular displacement γ 1= (n-1) x α 1 , γ 2 = (n-1) x α 2 , and the angular separation of the two-sided images is γ=γ 1 +γ 2 ; The distance between the center of the cubic beam splitter and combiner and the center of the inclined surface of the side reflection image transfer prism is D / 2+d, and the working distance of the side imaging light path is WD=D / 2+d / 2. The cubic beam splitter and combiner and the inclined surface of the ceiling reflection image transfer prism are at the same horizontal height, and the distance between them is D / 2+d. The working distance of the ceiling imaging light path is WD=D / 2+d / 2. D is the width of the transparent glass stage, and d is the length of the right-angle side of the prism.

[0023] Furthermore, the center of the cubic beam splitter and combiner, the center of the reflection surface of the two reflection image transfer prisms, and the center of the semiconductor grain are connected to form a square symmetrical optical path structure with a side length of D / 2+d=37.5mm, D is the width of the transparent glass stage, and d is the side length of the prism; the size of the cubic beam splitter and combiner is 15*15*15mm, aligned with the sides of the sky and side reflection image transfer prisms, the wedge angle α of the equivalent glass wedge of the sky and side reflection image transfer prisms is 2°, the three angles of the sky reflection image transfer prism are 45°, 88°, and 47°; the three angles of the side reflection image transfer prism are 45°, 92°, and 43°; the glass material of the sky and side reflection image transfer prisms is K9, and the angular displacement γ is calculated 1 =γ 2 = (n-1) x α 2 =1.03°, the resulting double image angle displacement is γ=2.06°, the corresponding space δ=γxL=1.42mm, focal length f=51.5mm, WD=110 mm, (i is the thickness of the grain).

[0024] Furthermore, the size of the above-mentioned celestial reflection image relay prism is 15*15*15mm, the size of the side reflection image relay prism is 15*15*15mm, and the size of the cubic beam splitter and image combiner is 15*15*15mm; the working distance of the celestial imaging light path WD=D / 2+d / 2=30mm, the working distance of the side imaging light path WD=D / 2+d / 2=30mm, and the double image angle displacement error caused by the angular manufacturing tolerance (≤15 arc seconds) of the cubic beam splitter and image combiner and the image relay prism should be controlled within 2 arc minutes.

[0025] The invention discloses a method for detecting confocal imaging of adjacent double-sided surfaces of semiconductor cooling device grains at the same time with completely equal optical path. The new device for detecting confocal imaging of adjacent double-sided surfaces of semiconductor cooling device grains at the same time with completely equal optical path comprises a CMOS or CCD camera, a telecentric imaging lens, a cubic beam splitter and image combiner, a semiconductor grain and a transparent glass stage for holding the semiconductor grain, which are arranged in the direction of the optical path. A sky reflection image transfer prism and a side reflection image transfer prism are respectively arranged on the optical path between the semiconductor grain and the cubic beam splitter and image combiner. The side reflection image transfer prism and the sky reflection image transfer prism are respectively located at the front side of the semiconductor grain and directly above the sky. The cubic beam splitter and image combiner are at the same horizontal height as the sky reflection image transfer prism. The side reflection image transfer prism and the cubic beam splitter and image combiner are located on the optical axis of the telecentric imaging lens. At the same time, the first surface of the side reflection image transfer prism is shaped in a normal direction to the optical axis of the telecentric imaging lens. The first surface of the prism is parallel to the side surface of the semiconductor crystal grain, and the second surface of the prism is parallel to the side surface of the semiconductor crystal grain, and the inclined surface of the prism is inclined to the optical axis of the telecentric imaging lens; the first surface of the prism forms an optical wedge angle with the optical axis of the telecentric imaging lens, and is opposite to the second surface of the prism, the second surface of the prism is parallel to the prism, and the inclined surface of the prism is inclined to the optical axis of the telecentric imaging lens; a coaxial external illumination light source is arranged on the side of the fourth surface opposite to the second surface of the prism, and the prism and the side surface of the semiconductor crystal grain are respectively imaged on the camera sensor surface with complete equal optical path confocal imaging through the prism, the side reflection image transfer prism, and the prism, so as to obtain independent images of the two sides of the semiconductor crystal grain on the CMOS or CCD camera; during detection,

[0026] Double-sided lighting light path:

[0027] The coaxial external illumination light source is divided into two illumination beams when passing through the cubic beam splitter and combiner: one beam of light is reflected by the top surface and then transferred to the image transfer prism to illuminate the top surface of the semiconductor crystal grain to be tested on the glass object transfer disk; and the other illumination beam is reflected by the side surface and then transferred to the image transfer prism to illuminate the side surface of the semiconductor crystal grain to be tested. The two illumination beams illuminate two adjacent surfaces of the semiconductor crystal grain respectively.

[0028] Imaging detection optical path:

[0029] The two adjacent surfaces of the illuminated semiconductor crystal grain produce diffuse light. The imaging light beam of the semiconductor crystal grain is reflected by the prism and then emitted to one side of the optical axis, which produces an angular displacement γ. 1 , and then reflected by the cubic beam splitter and combiner to reach the reference output surface; while the imaging beam on the side of the semiconductor crystal grain is reflected by the side and the imaging beam emitted by the image transfer prism also produces an angular displacement γ to the other side of the optical axis 2, and then transmitted through the cubic beam splitter and combiner to reach the reference output surface. The angular displacement of the adjacent surface output from the cubic beam splitter and combiner is γ=γ 1 +γ 2 The corresponding interval of the equivalent space of adjacent surfaces of the grain is δ=γx L, where L is the distance between the reflection transfer prism and the equivalent object surface, and the independent images of both surfaces are obtained on the CMOS or CCD camera. The reflection transfer prism can generate an expected angular displacement γ while transferring the image. 1 and γ 2 , which is functionally equivalent to the integration of a right-angle image-turning prism and a glass wedge that can produce angular displacement of light.

[0030] The invention discloses a novel device for simultaneously and completely equal-optical-path confocal imaging detection of adjacent double-sided surfaces of semiconductor cooling device crystal grains, which is characterized by comprising: a CMOS or CCD camera, a telecentric imaging lens, a cubic beam splitter and a combiner, a semiconductor crystal grain and a transparent glass stage for holding the semiconductor crystal grain arranged in the direction of the optical path; a sky right-angle image rotation prism and a side right-angle image rotation prism are respectively arranged on the optical path between the semiconductor crystal grain and the cubic beam splitter and the combiner; the side right-angle image rotation prism and the sky right-angle image rotation prism are respectively located on the front side of the semiconductor crystal grain and directly above the sky surface; the cubic beam splitter and the combiner are at the same horizontal height; the side right-angle image rotation prism and the cubic beam splitter and the combiner are located on the optical axis of the telecentric imaging lens; at the same time, the first right-angle surface of the side right-angle image rotation prism is perpendicular to the optical axis of the telecentric imaging lens and is parallel to and opposite to the first surface of the cubic beam splitter and the side right-angle image rotation prism is arranged on the optical axis of the telecentric imaging lens; The second right-angle surface of the right-angle image-turning prism is parallel to and opposite to the side surface of the semiconductor crystal grain, the two right-angle sides of the side right-angle image-turning prism are unequal, and the inclined surface is arranged obliquely with the optical axis of the telecentric imaging lens; the first right-angle surface of the sky right-angle image-turning prism is parallel to the optical axis of the telecentric imaging lens, and is parallel to and opposite to the second surface of the cubic beam splitter and image combiner; the second right-angle surface of the sky right-angle image-turning prism is parallel to and opposite to the sky surface of the semiconductor crystal grain, the two right-angle sides of the sky right-angle image-turning prism are unequal, and the inclined surface is arranged obliquely with the optical axis of the telecentric imaging lens; a coaxial external illumination light source is arranged beside the fourth surface opposite to the second surface of the cubic beam splitter and image combiner, and the sky surface and the side surface of the semiconductor crystal grain are respectively imaged on the camera sensor surface with completely equal optical path confocally through the sky right-angle image-turning prism, the side right-angle image-turning prism, and the cubic beam splitter and image combiner, so as to obtain independent images of both sides of the semiconductor crystal grain on a CMOS or CCD camera.

[0031] Advantages of the new detection device and detection method of the present invention:

[0032] 1) The present application can realize the confocal imaging defect detection of adjacent two sides of semiconductor grains at the same time, without the need to use a telecentric imaging lens with a large field of view, thus solving the contradiction of being unable to simultaneously solve the confocal imaging of adjacent two sides with equal optical path and the spatial separation of the two-side images;

[0033] 2) In an embodiment of the present application, a specially designed skylight and side reflection image transfer prism with glass wedge function is used in the imaging optical path to obtain the desired angular displacement γ or spatial separation δ of double-sided imaging. The double image interval δ can be adjusted. The interval size depends on the design of the glass wedge angle of the skylight and the side reflection image transfer prism (90°-α 1 , 90°+α 2 );

[0034] 3) The specially designed cubic beam splitter and combiner with glass wedge function used in the imaging optical path of another embodiment of the present application can obtain the expected angular displacement γ or spatial separation δ of double-sided imaging; similarly, the double image interval δ can be adjusted, and the interval size depends on the design of the glass wedge angle of the cubic image combiner facing the sky and the side imaging optical path (90°-α 1 , 90°+α 2 );

[0035] 4) This application uses an ordinary beam splitter / image combiner, a reflective image transfer prism and a CMOS or CCD camera. There is no need to use additional glass parallel plates or large-field telecentric imaging lenses, and there is no need to use expensive polarization optical elements and polarization CMOS sensors (cameras). This can effectively reduce the cost of the detection device and improve the cost-effectiveness of the detection device.

[0036] 5) The semiconductor grain adjacent double-sided simultaneous imaging detection device has a simple and compact structure, is easy to assemble and debug, and has good reliability. Description of the drawings:

[0038] Figure 1-4 It is an existing optical device for detecting adjacent surfaces of semiconductor grains;

[0039] 1 is a black and white camera, 2 is a telecentric imaging lens, 3a or 3b is an image transfer prism, 3 is an image combining optical element, 4 is a semiconductor crystal, 5 is a transparent glass stage, 6 or 6a or 6b is an image transfer prism, 7 or 7a and 7b are light sources, 8 and 9 are filters, 8a is a polarizing prism, and 8b is a roof prism;

[0040] Figure 5 It is a schematic diagram of the principle of an embodiment of the device of the present invention;

[0041] Figure 6 yes Figure 5 Schematic diagram of the design of the mid-sky and side reflection image-transfer prisms;

[0042] Figure 7 yes Figure 5 A partial design diagram;

[0043] Figure 8 It is a schematic diagram of the principle of another embodiment of the device of the present invention;

[0044] Fig. 9 yes Figure 8 Schematic diagram of the design of the mid-sky and side reflection image-transfer prisms;

[0045] Fig.10 yes Figure 8 A partial design diagram;

[0046] Fig.11 It is a schematic diagram of the principle of another embodiment of the device of the present invention;

[0047] Fig.12 yes Fig.11 Schematic diagram of the design of the mid-sky and side reflection image-transfer prisms;

[0048] Fig.13 yes Fig.11 Schematic diagram of the local design.

[0049] Fig.14 It is a schematic diagram of the principle of another embodiment of the device of the present invention;

[0050] Fig.15 yes Fig.11 Schematic diagram of the design of the mid-sky and side reflection image-transfer prisms;

[0051] Fig.16 yes Fig.11 Schematic diagram of the local design. Specific implementation method:

[0053] Embodiment of the present invention Figure 5-7As shown, the new device for simultaneous complete equal-optical-path confocal imaging detection of adjacent double-sided semiconductor cooling device grains of the present invention comprises a CMOS or CCD camera 1, a telecentric imaging lens 2, a cubic beam splitter and image combiner 3, a semiconductor grain 5 and a transparent glass stage 6 for holding the semiconductor grain, which are arranged in the direction of the optical path. A sky right-angle image rotation prism 4a and a side right-angle image rotation prism 4b are respectively arranged on the optical path between the semiconductor grain and the cubic beam splitter and image combiner. The side right-angle image rotation prism 4b and the sky right-angle image rotation prism 4a are respectively located on the front side of the semiconductor grain and directly above the sky. The cubic beam splitter and image combiner are at the same horizontal height as the sky right-angle image rotation prism. The side right-angle image rotation prism and the cubic beam splitter and image combiner are located on the optical axis A of the telecentric imaging lens. At the same time, the first right-angle surface 401b of the side right-angle image rotation prism is perpendicular to the optical axis of the telecentric imaging lens and is opposite to the first surface 301 of the cubic beam splitter and image combiner. The second right-angle surface 402b of the side right-angle image rotation prism The first right-angle surface 401a of the right-angle image-transfer prism on the sky surface is parallel to the optical axis of the telecentric imaging lens and is opposite to the second surface 302 of the cubic beam splitter and combiner. The second right-angle surface 402a of the right-angle image-transfer prism on the sky surface is parallel to the sky surface of the semiconductor crystal grain, and the inclined surface 403a of the right-angle image-transfer prism on the sky surface is inclined to the optical axis of the telecentric imaging lens. The first surface 301 and the second surface 302 of the imager form an optical wedge angle with the normal surface of the optical axis and the optical axis of the telecentric imaging lens respectively. A coaxial external illumination light source 7 is provided on the side of the fourth surface opposite to the second surface of the cubic beam splitter and combiner. The top surface and the side surface of the semiconductor crystal grain are respectively imaged on the camera sensor surface with complete equal optical path confocal imaging through the top surface right-angle image rotation prism, the side surface right-angle image rotation prism and the cubic beam splitter and combiner, so as to obtain independent images of both sides of the semiconductor crystal grain on the CMOS or CCD camera.

[0054] The wedge angles of the first and second surfaces of the above-mentioned cubic beam splitter and combiner are α 1 and α 2 , α 1 and α 2 The two beam splitters that form the cubic beam splitter combiner deviate from the right angle of the wedge angle. The four angles of the cubic beam splitter combiner are 90°, 90°-α 1 , 90°, 90°+α 2； Wedge angle α 1 and α 2 The double-sided imaging beams are respectively displaced γ to the two sides of the optical axis of the cubic beam splitter and combiner. 1 and γ 2 , and γ 1 With γ 2 The size depends on the refractive index n of the cubic beam splitter and combiner glass and the equivalent glass wedge angle α 1 With α 2; The images of adjacent faces of semiconductor grains output from the cubic beam splitter and combiner are separated in space, and the wedge angle α 1 The resulting angular displacement γ 1 = (n-1) x α 1 , γ 2 = (n-1) x α 2 , and the angular separation of the two-sided images is γ=γ 1 +γ 2 ; The distance between the center of the cubic beam splitter and combiner and the center of the inclined surface of the side reflection image transfer prism is D / 2+d, and the working distance of the side imaging light path is WD=D / 2+d / 2. The cubic beam splitter and combiner and the inclined surface of the ceiling reflection image transfer prism are at the same horizontal height, and the distance between them is D / 2+d. The working distance of the ceiling imaging light path is WD=D / 2+d / 2. D is the width of the transparent glass stage, and d is the length of the right-angle side of the prism.

[0055] The center of the cubic beam splitter and combiner, the center of the reflection surface of the two right-angle image-transfer prisms, and the center of the semiconductor grain are connected to form a square symmetrical optical path structure with a side length of D / 2+d=37.5mm, where D is the width of the transparent glass stage and d is the side length of the prism; the size of the cubic beam splitter and combiner is 15*15*15mm, aligned with the sides of the sky and side right-angle image-transfer prisms, and the wedge angle α of the equivalent glass wedge of the beam splitter prism of the cubic beam splitter and combiner 1 =α 2 = 2°, the four angles of the cubic beam splitter and combiner are 90°, 88°, 90°, 92°

[0056] ; The glass material of the cubic beam splitter and combiner is K9, and the angular displacement γ is calculated 1 =γ 2 = (n-1) x α 2 =1.03°, the resulting double image angle displacement is γ=2.06°, the corresponding space δ=γxL=2.21mm, focal length f=51.5mm, WD=110 mm, (i is the thickness of the grain).

[0057] The size of the above-mentioned celestial reflection image relay prism is 15*15*15mm, the size of the side reflection image relay prism is 15*15*15mm, and the size of the cubic beam splitter and image combiner is 15*15*15mm; the working distance of the celestial imaging light path WD=D / 2+d / 2 =30mm, and the working distance of the side imaging light path WD= D / 2+d / 2=30mm. The double image angle displacement error caused by the angular manufacturing tolerance (≤15 arc seconds) of the cubic beam splitter and image combiner and the image relay prism should be controlled within 2 arc minutes.

[0058] The invention discloses a method for detecting confocal imaging of adjacent double sides of semiconductor cooling device grains at the same time with completely equal optical path. The method is characterized in that: the new device for detecting confocal imaging of adjacent double sides of semiconductor cooling device grains at the same time with completely equal optical path comprises a CMOS or CCD camera, a telecentric imaging lens, a cubic beam splitter and a combiner, semiconductor grains and a transparent glass stage for holding the semiconductor grains arranged in the direction of the optical path; a sky right-angle image rotation prism and a side right-angle image rotation prism are respectively arranged on the optical path between the semiconductor grains and the cubic beam splitter and the combiner; the side right-angle image rotation prism and the sky right-angle image rotation prism are respectively located on the front side of the semiconductor grains and directly above the sky; the cubic beam splitter and the combiner are at the same horizontal height; the side right-angle image rotation prism and the cubic beam splitter and the combiner are located on the optical axis of the telecentric imaging lens; at the same time, the first right-angle surface of the side right-angle image rotation prism is perpendicular to the optical axis of the telecentric imaging lens and is opposite to the first surface of the cubic beam splitter and the combiner. , the second right-angle surface of the side right-angle image-turning prism is parallel to and opposite to the side surface of the semiconductor crystal grain, and the inclined surface of the side right-angle image-turning prism is inclined to the optical axis of the telecentric imaging lens; the first right-angle surface of the sky right-angle image-turning prism is parallel to the optical axis of the telecentric imaging lens and opposite to the second surface of the cubic beam splitter and combiner, the second right-angle surface of the sky right-angle image-turning prism is parallel to and opposite to the sky surface of the semiconductor crystal grain, and the inclined surface of the sky right-angle image-turning prism is inclined to the optical axis of the telecentric imaging lens; the first surface and the second surface of the cubic beam splitter and combiner form an optical wedge angle with the normal surface and the optical axis of the telecentric imaging lens respectively, and a coaxial external illumination light source is provided beside the fourth surface opposite to the second surface of the cubic beam splitter and combiner, and the sky surface and the side surface of the semiconductor crystal grain are respectively imaged on the camera sensor surface with complete equal optical path confocal imaging through the sky right-angle image-turning prism, the side right-angle image-turning prism, and the cubic beam splitter and combiner, so as to obtain independent images of both sides of the semiconductor crystal grain on the CMOS or CCD camera; during detection,

[0059] Double-sided lighting light path:

[0060] The coaxial external illumination light source is divided into two illumination beams when passing through the cubic beam splitter and combiner: one beam of light is reflected by the top surface and then transferred to the image transfer prism to illuminate the top surface of the semiconductor crystal grain to be tested on the glass object transfer disk; and the other illumination beam is reflected by the side surface and then transferred to the image transfer prism to illuminate the side surface of the semiconductor crystal grain to be tested. The two illumination beams illuminate two adjacent surfaces of the semiconductor crystal grain respectively.

[0061] Imaging detection optical path:

[0062] The two adjacent surfaces of the illuminated semiconductor crystal grain produce diffuse light. The imaging beam of the semiconductor crystal grain is transferred by the right-angle image transfer prism, and then reflected by the cubic beam splitter and combiner to reach the reference output surface. The outgoing imaging beam has an angular displacement γ to one side of the optical axis. 1The imaging beam on the side of the semiconductor crystal passes through the side right-angle image rotation prism, and then transmits through the cubic beam splitter and combiner to reach the reference output surface. The outgoing imaging beam also produces an angular displacement γ to the other side of the optical axis. 2 The angular displacement of adjacent faces output from the cubic beam splitter / combiner is γ = γ 1 +γ 2 The corresponding spacing between adjacent grain surfaces is δ=γx L, where L is the distance between the reflective image transfer prism and the equivalent object surface, and independent images of both surfaces are obtained on the CMOS or CCD camera. The cubic beam splitter and combiner can produce an expected angular displacement γ while combining the images. 1 and γ 2 , which is functionally equivalent to the integration of an image combiner and a glass wedge that can produce angular displacement of light.

[0063] The illumination light source of the present invention can be monochromatic light, or a quasi-monochromatic light source with a certain spectral bandwidth or white light.

[0064] Embodiment 2 of the present invention Figure 8-10 As shown, a new device for simultaneous complete equal-optical-path confocal imaging detection of adjacent double-sided surfaces of semiconductor cooling device crystal grains comprises a CMOS or CCD camera 1, a telecentric imaging lens 2, a cubic beam splitter and image combiner 3, a semiconductor crystal grain 5 and a transparent glass stage 6 for holding the semiconductor crystal grain, arranged in the direction of the optical path, a sky reflection image transfer prism 4a and a side reflection image transfer prism 4b are respectively arranged on the optical path between the semiconductor crystal grain and the cubic beam splitter and image combiner, the side reflection image transfer prism 4b and the sky reflection image transfer prism 4a are respectively located on the front side of the semiconductor crystal grain and directly above the sky surface, the cubic beam splitter and image combiner 3 and the sky reflection image transfer prism 4a are at the same horizontal height; the side reflection image transfer prism 4b and the cubic beam splitter and image combiner 3 are located on the optical axis A of the telecentric imaging lens, and at the same time, the first surface 401b of the side reflection image transfer prism forms an optical wedge angle with the normal surface of the optical axis of the telecentric imaging lens, and forms an optical wedge angle with the first surface 301b of the cubic beam splitter and image combiner. 01, the second surface 402b of the side reflection image transfer prism is parallel to the side surface of the semiconductor crystal grain, and the inclined surface 403b of the side reflection image transfer prism is inclined to the optical axis of the telecentric imaging lens; the first surface 401a of the sky reflection image transfer prism forms an optical wedge angle with the optical axis of the telecentric imaging lens and is opposite to the second surface 302 of the cubic beam splitter and combiner, the second surface 402a of the sky reflection image transfer prism is parallel to the sky surface of the semiconductor crystal grain, and the inclined surface 403a of the sky reflection image transfer prism is inclined to the optical axis of the telecentric imaging lens; a coaxial external illumination light source 7 is provided on the side of the fourth surface 304 opposite to the second surface of the cubic beam splitter and combiner, and the sky surface and the side surface of the semiconductor crystal grain are respectively imaged on the camera sensor surface with complete equal optical path confocal imaging through the sky reflection image transfer prism 4a, the side reflection image transfer prism 4b and the cubic beam splitter and combiner 3, so as to obtain independent images of both sides of the semiconductor crystal grain on the CMOS or CCD camera.

[0065] The optical wedge angle between the zenith reflection image transfer prism and the first surface of the side reflection image transfer prism is α 1 and α 2 , which is the degree of deviation of the first surface of the two reflection image transfer prisms from the right angle. The three angles of the celestial reflection image transfer prism are 45°, 90°-α 1 , 45°+α 1； The three angles of the side reflection prism are 45°, 90°+α 2 、45°-α 2 , wedge angle α 1 and α 2 The double-sided imaging beams are respectively displaced γ to the two sides of the optical axis of the cubic beam splitter and combiner. 1 and γ 2 , and γ 1 With γ 2 The size depends on the refractive index n of the reflection image prism glass and the equivalent glass wedge angle α 1 With α 2 ; The images of adjacent faces of semiconductor grains output from the cubic beam splitter and combiner are separated in space, and the wedge angle α 1 The resulting angular displacement γ 1 = (n-1) x α 1 , γ 2 = (n-1) x α 2 , and the angular separation of the two-sided images is γ=γ 1 +γ 2 ; The distance between the center of the cubic beam splitter and combiner and the center of the inclined surface of the side reflection image transfer prism is D / 2+d, and the working distance of the side imaging light path is WD=D / 2+d / 2. The cubic beam splitter and combiner and the inclined surface of the ceiling reflection image transfer prism are at the same horizontal height, and the distance between them is D / 2+d. The working distance of the ceiling imaging light path is WD=D / 2+d / 2. D is the width of the transparent glass stage, and d is the length of the right-angle side of the prism.

[0066] The center of the cubic beam splitter and combiner, the center of the reflection surface of the two reflection image transfer prisms, and the center of the semiconductor grain are connected to form a square symmetrical optical path structure with a side length of D / 2+d=37.5mm. D is the width of the transparent glass stage, and d is the side length of the prism. The size of the cubic beam splitter and combiner is 15*15*15mm, which is aligned with the sides of the sky and side reflection image transfer prisms. The wedge angle α of the equivalent glass wedge of the sky and side reflection image transfer prisms is 2°. The three angles of the sky reflection image transfer prism are 45°, 88°, and 47°; the three angles of the side reflection image transfer prism are 45°, 92°, and 43°. The glass material of the sky and side reflection image transfer prisms is K9, and the angular displacement γ is calculated. 1 =γ 2 = (n-1) x α 2=1.03°, the resulting double image angle displacement is γ=2.06°, the corresponding space δ=γxL=1.42mm, focal length f=51.5mm, WD=110 mm, (i is the thickness of the grain).

[0067] The size of the above-mentioned celestial reflection image relay prism is 15*15*15mm, the size of the side reflection image relay prism is 15*15*15mm, and the size of the cubic beam splitter and image combiner is 15*15*15mm; the working distance of the celestial imaging light path WD=D / 2+d / 2 =30mm, and the working distance of the side imaging light path WD= D / 2+d / 2=30mm. The double image angle displacement error caused by the angular manufacturing tolerance (≤15 arc seconds) of the cubic beam splitter and image combiner and the image relay prism should be controlled within 2 arc minutes.

[0068] The invention discloses a method for detecting confocal imaging of adjacent double sides of a semiconductor cooling device grain at the same time with completely equal optical path. The device comprises a CMOS or CCD camera, a telecentric imaging lens, a cubic beam splitter and image combiner, a semiconductor grain and a transparent glass stage for holding the semiconductor grain, which are arranged in the direction of the optical path. A sky reflection image transfer prism and a side reflection image transfer prism are respectively arranged on the optical path between the semiconductor grain and the cubic beam splitter and image combiner. The side reflection image transfer prism and the sky reflection image transfer prism are respectively located on the front side of the semiconductor grain and directly above the sky surface. The cubic beam splitter and image combiner are at the same horizontal height as the sky reflection image transfer prism. The side reflection image transfer prism and the cubic beam splitter and image combiner are located on the optical axis of the telecentric imaging lens. At the same time, the first surface of the side reflection image transfer prism forms an optical wedge angle with the normal surface of the optical axis of the telecentric imaging lens and forms an optical wedge angle with the cubic beam splitter and image combiner. The first surface of the side reflection image transfer prism is opposite to the first surface of the semiconductor crystal grain, the second surface of the side reflection image transfer prism is parallel to the side surface of the semiconductor crystal grain, and the inclined surface of the side reflection image transfer prism is inclined to the optical axis of the telecentric imaging lens; the first surface of the sky reflection image transfer prism forms an optical wedge angle with the optical axis of the telecentric imaging lens and is opposite to the second surface of the cubic beam splitter and image combiner, the second surface of the sky reflection image transfer prism is parallel to the sky surface of the semiconductor crystal grain, and the inclined surface of the sky reflection image transfer prism is inclined to the optical axis of the telecentric imaging lens; a coaxial external illumination light source is arranged on the side of the fourth surface opposite to the second surface of the cubic beam splitter and image combiner, and the sky surface and the side surface of the semiconductor crystal grain are respectively imaged on the camera sensor surface with complete equal optical path confocal imaging through the sky reflection image transfer prism, the side reflection image transfer prism and the cubic beam splitter and image combiner, so as to obtain independent images of both sides of the semiconductor crystal grain on the CMOS or CCD camera; during detection,

[0069] Double-sided lighting light path:

[0070] The coaxial external illumination light source is divided into two illumination beams when passing through the cubic beam splitter and combiner: one beam of light is reflected by the top surface and then transferred to the image transfer prism to illuminate the top surface of the semiconductor crystal grain to be tested on the glass object transfer disk; and the other illumination beam is reflected by the side surface and then transferred to the image transfer prism to illuminate the side surface of the semiconductor crystal grain to be tested. The two illumination beams illuminate two adjacent surfaces of the semiconductor crystal grain respectively.

[0071] Imaging detection optical path:

[0072] The two adjacent surfaces of the illuminated semiconductor crystal grain produce diffuse light. The imaging light beam of the semiconductor crystal grain is reflected by the prism and then emitted to one side of the optical axis, which produces an angular displacement γ. 1 , and then reflected by the cubic beam splitter and combiner to reach the reference output surface; while the imaging beam on the side of the semiconductor crystal grain is reflected by the side and the imaging beam emitted by the image transfer prism also produces an angular displacement γ to the other side of the optical axis 2 , and then transmitted through the cubic beam splitter and combiner to reach the reference output surface. The angular displacement of the adjacent surface output from the cubic beam splitter and combiner is γ=γ 1 +γ 2 The corresponding interval of the equivalent space of adjacent surfaces of the grain is δ=γx L, where L is the distance between the reflection transfer prism and the equivalent object surface, and the independent images of both surfaces are obtained on the CMOS or CCD camera. The reflection transfer prism can generate an expected angular displacement γ while transferring the image. 1 and γ 2 , which is functionally equivalent to the integration of a right-angle image-turning prism and a glass wedge that can produce angular displacement of light.

[0073] Figure 11-13This is the third embodiment of the present invention. The difference between this embodiment and the second embodiment is that the surface of the side reflection image transfer prism and the sky reflection image transfer prism forming the optical wedge angle is not on the first surface, but on the second surface close to the semiconductor crystal grain. This embodiment includes a CMOS or CCD camera 1, a telecentric imaging lens 2, a cubic beam splitter and image combiner 3, a semiconductor crystal grain 5 and a transparent glass stage 6 for holding the semiconductor crystal grain arranged in the optical path direction. A sky reflection image transfer prism 4a and a side reflection image transfer prism 4b are respectively arranged on the optical path between the semiconductor crystal grain and the cubic beam splitter and image combiner. The side reflection image transfer prism and the sky reflection image transfer prism are respectively located on the front side of the semiconductor crystal grain and directly above the sky. The cubic beam splitter and image combiner 3 and the sky reflection image transfer prism 4a are at the same horizontal height. The side reflection image transfer prism 4b and the cubic beam splitter and image combiner 3 are located on the optical axis A of the telecentric imaging lens. At the same time, the second surface 402b of the side reflection image transfer prism forms an optical angle with the optical axis of the telecentric imaging lens. The first surface 401b of the side reflection image transfer prism is parallel to the first surface 301 of the cubic beam splitter and combiner, and the inclined surface 403b of the side reflection image transfer prism is inclined to the optical axis of the telecentric imaging lens; the second surface 402a of the sky reflection image transfer prism forms an optical wedge angle with the normal surface of the optical axis of the telecentric imaging lens, and is opposite to the sky surface of the semiconductor crystal grain, and the first surface 401a of the sky reflection image transfer prism is parallel to the second surface 302a of the cubic beam splitter and combiner. Relative to the line, the inclined surface 403a of the sky reflection image transfer prism is inclined with the optical axis of the telecentric imaging lens; a coaxial external illumination light source 7 is provided on the side of the fourth surface 304 opposite to the second surface of the cubic beam splitter and combiner, and the sky surface and the side surface of the semiconductor crystal grain are respectively imaged on the camera sensor surface with complete equal optical path confocal imaging through the sky reflection image transfer prism 4a, the side reflection image transfer prism 4b and the cubic beam splitter and combiner 3, so as to obtain independent images of both sides of the semiconductor crystal grain on the CMOS or CCD camera.

[0074] The working method of the third embodiment:

[0075] Double-sided lighting light path:

[0076] The coaxial external illumination light source is divided into two illumination beams when passing through the cubic beam splitter and combiner: one beam of light is reflected by the top surface and then transferred to the image transfer prism to illuminate the top surface of the semiconductor crystal grain to be tested on the glass object transfer disk; and the other illumination beam is reflected by the side surface and then transferred to the image transfer prism to illuminate the side surface of the semiconductor crystal grain to be tested. The two illumination beams illuminate two adjacent surfaces of the semiconductor crystal grain respectively.

[0077] Imaging detection optical path:

[0078] The two adjacent surfaces of the illuminated semiconductor crystal grain produce diffuse light. The imaging light beam of the semiconductor crystal grain is reflected by the prism and then emitted to one side of the optical axis, which produces an angular displacement γ. 1, and then reflected by the cubic beam splitter and combiner to reach the reference output surface; while the imaging beam on the side of the semiconductor crystal grain is reflected by the side and the imaging beam emitted by the image transfer prism also produces an angular displacement γ to the other side of the optical axis 2 , and then transmitted through the cubic beam splitter and combiner to reach the reference output surface. The angular displacement of the adjacent surface output from the cubic beam splitter and combiner is γ=γ 1 +γ 2 The corresponding interval of the equivalent space of adjacent surfaces of the grain is δ=γx L, where L is the distance between the reflection transfer prism and the equivalent object surface, and the independent images of both surfaces are obtained on the CMOS or CCD camera. The reflection transfer prism can generate an expected angular displacement γ while transferring the image. 1 and γ 2 , which is functionally equivalent to the integration of a right-angle image-turning prism and a glass wedge that can produce angular displacement of light.

[0079] Figure 14-16 This is the fourth embodiment of the present invention. The difference between the fourth embodiment and the second and third embodiments is that the surface of the side reflection image transfer prism and the sky reflection image transfer prism forming the optical wedge angle is not on the first surface or the second surface, but on the inclined surface.

[0080] The embodiment includes a CMOS or CCD camera 1, a telecentric imaging lens 2, a cubic beam splitter and image combiner 3, a semiconductor crystal grain 5 and a transparent glass stage 6 for holding the semiconductor crystal grain, and a sky reflection image transfer prism 4a and a side reflection image transfer prism 4b are respectively arranged on the optical path between the semiconductor crystal grain and the cubic beam splitter and image combiner. The side reflection image transfer prism and the sky reflection image transfer prism are respectively located on the front side of the semiconductor crystal grain and directly above the sky surface. The cubic beam splitter and image combiner 3 and the sky reflection image transfer prism 4a are arranged on the optical path between the semiconductor crystal grain and the cubic beam splitter and image combiner. The side reflective image transfer prism 4b and the cubic beam splitter and combiner 3 are located on the optical axis A of the telecentric imaging lens. At the same time, the first right-angle surface 401b of the side right-angle image transfer prism is perpendicular to the optical axis A of the telecentric imaging lens and parallel to the first surface 301 of the cubic beam splitter and combiner. The second right-angle surface 402b of the side right-angle image transfer prism is parallel to the side surface of the semiconductor grain. The two right-angle sides of the side right-angle image transfer prism are unequal and the inclined surface 403b is inclined to the optical axis of the telecentric imaging lens. The inclined surface forms an optical wedge angle γ 2 The first right-angle surface 401a of the right-angle image-transferring prism is parallel to the optical axis A of the telecentric imaging lens, and is parallel to and opposite to the second surface 302 of the cubic beam splitter and combiner. The second right-angle surface 402a of the right-angle image-transferring prism is parallel to and opposite to the zenith of the semiconductor crystal grain. The two right-angle sides of the right-angle image-transferring prism are unequal and the inclined surface 403a is inclined to the optical axis of the telecentric imaging lens. The inclined surface forms an optical wedge angle γ 1A coaxial external illumination light source 7 is provided on the side of the fourth surface opposite to the second surface of the cubic beam splitter and combiner. The top surface and the side surface of the semiconductor crystal grain are respectively imaged on the camera sensor surface with complete equal optical path and confocal imaging through the top surface right-angle image rotation prism, the side surface right-angle image rotation prism and the cubic beam splitter and combiner, so as to obtain independent images of both sides of the semiconductor crystal grain on the CMOS or CCD camera.

[0081] The degrees of the three angles of the top reflection image transfer prism 4a and the side reflection image transfer prism 4b are 45°+0.5α, 90°, and 45°-0.5α. One embodiment is γ 1、 γ 2等于2.06 The degrees of the three angles of the top reflection image transfer prism 4a and the side reflection image transfer prism 4b are 45.34°, 90°, and 44.66°, and the parameters and positional relationships of the other components are as follows: Fig.16 shown.

[0082] A cubic beam splitter and image combiner is a cubic beam splitter prism composed of two identical right-angle prisms. It functions as a beam splitter in the illumination light path and as an image combiner in the imaging light path. Its shape is cubic, hence the name. A beam splitter film with a transmission and reflection ratio of 50%:50% is plated on the inclined surface of a right-angle prism, and the inclined surfaces of two right-angle reflecting prisms are glued together.

[0083] Advantages of the new detection device and detection method of the present invention:

[0084] 1) The present application can realize the confocal imaging defect detection of adjacent two sides of semiconductor grains at the same time, without the need to use a telecentric imaging lens with a large field of view, thus solving the contradiction of being unable to simultaneously solve the confocal imaging of adjacent two sides with equal optical path and the spatial separation of the two-side images;

[0085] 2) In an embodiment of the present application, a specially designed skylight and side reflection image transfer prism with glass wedge function is used in the imaging optical path to obtain the desired angular displacement γ or spatial separation δ of double-sided imaging. The double image interval δ can be adjusted. The interval size depends on the design of the glass wedge angle of the skylight and the side reflection image transfer prism (90°-α 1 , 90°+α 2 );

[0086] 3) The specially designed cubic beam splitter and combiner with glass wedge function used in the imaging optical path of another embodiment of the present application can obtain the expected angular displacement γ or spatial separation δ of double-sided imaging; similarly, the double image interval δ can be adjusted, and the interval size depends on the design of the glass wedge angle of the cubic image combiner facing the sky and the side imaging optical path (90°-α 1 , 90°+α 2 );

[0087] 4) This application uses an ordinary beam splitter and combiner, a reflective image transfer prism and a CMOS or CCD camera. There is no need to use additional glass parallel plates or large-field telecentric imaging lenses, and there is no need to use expensive polarization optical elements and polarization CMOS sensors (cameras). This can effectively reduce the cost of the detection device and improve the cost-effectiveness of the detection device.

[0088] 5) The semiconductor grain adjacent double-sided simultaneous imaging detection device has a simple and compact structure, is easy to assemble and debug, and has good reliability.

[0089] The device of the present invention is similar to the Michelson double-beam equal-arm interferometer. The device uses the top surface and the side reflection image transfer prism or the two surfaces of the cubic beam splitter and combiner in the adjacent double-sided imaging optical path to realize the image transfer and also realize the angular displacement γ of the double-sided imaging optical path of the grain. The device obtains the spatial separation imaging of the adjacent surfaces under the condition of satisfying the complete equal-path confocal of the double-sided imaging, so that the simultaneous complete equal-path confocal imaging detection of the adjacent double surfaces of the semiconductor grain can be realized. The spatial position separation of the double images of the adjacent surfaces of the semiconductor grain on the sensor surface of the CMOS camera of the present invention is δ'=δβ (β is the magnification of the telecentric imaging lens), and the adjacent double-sided imaging of the semiconductor grain satisfies the complete equal-path confocal imaging.

[0090] Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the preferred embodiments, ordinary technicians in the field should understand that the specific implementation methods of the present invention can still be modified or some technical features can be replaced by equivalents without departing from the spirit of the technical solution of the present invention, which should be included in the scope of the technical solution for protection of the present invention.

Claims

1. A new device for simultaneous and complete equal-path confocal imaging detection of adjacent double-sided crystals of semiconductor cooling devices. Features: The invention comprises a CMOS or CCD camera, a telecentric imaging lens, a cubic beam splitter and a combiner, a semiconductor crystal grain and a transparent glass stage for holding the semiconductor crystal grain, wherein a sky right-angle image rotation prism and a side right-angle image rotation prism are respectively arranged on the optical path between the semiconductor crystal grain and the cubic beam splitter and the combiner, the side right-angle image rotation prism and the sky right-angle image rotation prism are respectively arranged on the positive side of the semiconductor crystal grain and directly above the sky surface, and the cubic beam splitter and the combiner are at the same horizontal height; the side right-angle image rotation prism and the cubic beam splitter and the combiner are located on the optical axis of the telecentric imaging lens, and at the same time, the first right-angle surface of the side right-angle image rotation prism is perpendicular to the optical axis of the telecentric imaging lens and is opposite to the first surface of the cubic beam splitter and the combiner, the second right-angle surface of the side right-angle image rotation prism is parallel to and opposite to the side surface of the semiconductor crystal grain, and the inclined surface of the side right-angle image rotation prism is opposite to the telecentric imaging lens. The optical axis of the lens is tilted; the first right-angle surface of the sky right-angle image-turning prism is parallel to the optical axis of the telecentric imaging lens and opposite to the second surface of the cubic beam splitter and combiner; the second right-angle surface of the sky right-angle image-turning prism is parallel to the sky surface of the semiconductor crystal grain and opposite to it; the inclined surface of the sky right-angle image-turning prism is tilted to the optical axis of the telecentric imaging lens; the first surface and the second surface of the cubic beam splitter and combiner form an optical wedge angle with the normal surface and the optical axis of the telecentric imaging lens respectively; a coaxial external illumination light source is provided on the side of the fourth surface opposite to the second surface of the cubic beam splitter and combiner; the sky surface and the side surface of the semiconductor crystal grain are respectively imaged on the camera sensor surface with complete equal optical path confocal imaging through the sky right-angle image-turning prism, the side right-angle image-turning prism and the cubic beam splitter and combiner, so as to obtain independent images of the two sides of the semiconductor crystal grain on the CMOS or CCD camera; the optical wedge angles of the first surface and the second surface of the cubic beam splitter and combiner are α 1 and α 2 , α 1 and α 2 The two beam splitters that form the cubic beam splitter combiner deviate from the right angle of the wedge angle. The four angles of the cubic beam splitter combiner are 90°, 90°-α 1 , 90°, 90°+α 2 ; Wedge angle α 1 and α 2 The double-sided imaging beams are respectively displaced γ to the two sides of the optical axis of the cubic beam splitter and combiner. 1 and γ 2 , and γ 1 With γ 2 The size depends on the refractive index n of the cubic beam splitter and combiner glass and the equivalent glass wedge angle α 1 With α 2 ; The images of adjacent faces of semiconductor grains output from the cubic beam splitter and combiner are separated in space, and the wedge angle α 1 The resulting angular displacement γ 1 = (n-1) x α 1 , γ 2 = (n-1) x α 2 , and the double image angular displacement is γ=γ 1 +γ 2 ; The distance between the center of the cubic beam splitter and combiner and the center of the inclined surface of the side reflection transfer prism is D / 2+d, and the working distance of the side imaging light path is WD=D / 2+d / 2. The cubic beam splitter and combiner and the inclined surface of the ceiling reflection transfer prism are at the same horizontal height. The distance between their centers is D / 2+d, and the working distance of the ceiling imaging light path is WD=D / 2+d / 2. D is the width of the transparent glass stage, and d is the length of the right-angled side of the prism.

2. The new device for simultaneous and complete equal-optical-path confocal imaging detection of adjacent double-sided surfaces of semiconductor cooling device crystal grains according to claim 1, Features: The center of the cubic beam splitter and combiner, the center of the reflection surface of the two right-angle image-transfer prisms, and the center of the semiconductor grain are connected to form a square symmetrical optical path structure with a side length of D / 2+d=37.5mm, where D is the width of the transparent glass stage and d is the side length of the prism; the size of the cubic beam splitter and combiner is 15*15*15mm, aligned with the sides of the sky and side right-angle image-transfer prisms, and the wedge angle α of the equivalent glass wedge of the beam splitter prism of the cubic beam splitter and combiner 1 =α 2 = 2°, the four angles of the cubic beam splitter and combiner are 90°, 88°, 90°, and 92°; the glass material of the cubic beam splitter and combiner is K9, and the angular displacement γ is calculated 1 =γ 2 = (n-1) x α 2 =1.03°, the resulting double image angle displacement is γ=2.06°, and the corresponding space interval δ=γxL=2.21mm, L is the distance between the reflection image transfer prism and the equivalent object plane, γ is the double image angle displacement; focal length f=51.5mm, WD=110 mm, the wedge angle of the equivalent glass wedge of the sky and side reflection image transfer prisms is α=2°, , i is the thickness of the grain; the size of the sky reflection image transfer prism is 15*15*15mm, the size of the side reflection image transfer prism is 15*15*15mm, and the size of the cubic beam splitter and image combiner is 15*15*15mm; the sky imaging optical path working distance WD=D / 2+d / 2 =30mm, the side imaging optical path working distance WD= D / 2+d / 2=30mm, the angular manufacturing tolerance of the cubic beam splitter and image combiner and the image transfer prism is ≤15 arc seconds, and the resulting double image angular displacement error is controlled within 2 arc minutes.

3. A method for detecting confocal imaging of adjacent double sides of a semiconductor cooling device grain simultaneously with complete equal optical path length, as claimed in claim 1, Features: The novel device for simultaneous and completely equal-optical-path confocal imaging detection of adjacent double-sided crystal grains of a semiconductor cooling device comprises a CMOS or CCD camera, a telecentric imaging lens, a cubic beam splitter and image combiner, a semiconductor crystal grain and a transparent glass stage for holding the semiconductor crystal grain, wherein a sky right-angle image rotation prism and a side right-angle image rotation prism are respectively arranged on the optical path between the semiconductor crystal grain and the cubic beam splitter and image combiner, the side right-angle image rotation prism and the sky right-angle image rotation prism are respectively located on the front side of the semiconductor crystal grain and directly above the sky surface, and the cubic beam splitter and image combiner are at the same horizontal height; the side right-angle image rotation prism and the cubic beam splitter and image combiner are located on the optical axis of the telecentric imaging lens, and the first right-angle surface of the side right-angle image rotation prism is perpendicular to the optical axis of the telecentric imaging lens and is opposite to the first surface of the cubic beam splitter and image combiner, and the second right-angle surface of the side right-angle image rotation prism is perpendicular to the optical axis of the telecentric imaging lens and is opposite to the first surface of the cubic beam splitter and image combiner, and the second right-angle surface of the side right-angle image rotation prism is opposite to the first surface of the semiconductor crystal grain. The side surfaces of the crystal grains are parallel to each other, and the inclined surface of the side right-angle image-turning prism is tilted to the optical axis of the telecentric imaging lens; the first right-angle surface of the sky right-angle image-turning prism is parallel to the optical axis of the telecentric imaging lens and is opposite to the second surface of the cubic beam splitter and combiner, the second right-angle surface of the sky right-angle image-turning prism is parallel to the sky surface of the semiconductor crystal grain, and the inclined surface of the sky right-angle image-turning prism is tilted to the optical axis of the telecentric imaging lens; the first surface and the second surface of the cubic beam splitter and combiner form an optical wedge angle with the normal surface and the optical axis of the telecentric imaging lens respectively, and a coaxial external illumination light source is arranged beside the fourth surface opposite to the second surface of the cubic beam splitter and combiner, and the sky surface and the side surface of the semiconductor crystal grain are respectively imaged on the camera sensor surface with complete equal optical path confocal imaging through the sky right-angle image-turning prism, the side right-angle image-turning prism, and the cubic beam splitter and combiner, so as to obtain independent images of both sides of the semiconductor crystal grain on the CMOS or CCD camera; during detection, Double-sided lighting light path: The coaxial external illumination light source is divided into two illumination beams when passing through the cubic beam splitter and combiner: one beam of light is reflected by the top surface and then transferred to the image transfer prism to illuminate the top surface of the semiconductor crystal grain to be tested on the transparent glass stage; and the other illumination beam is reflected by the side surface and then transferred to the image transfer prism to illuminate the side surface of the semiconductor crystal grain to be tested. The two illumination beams illuminate two adjacent surfaces of the semiconductor crystal grain respectively. Imaging detection optical path: The two adjacent surfaces of the illuminated semiconductor crystal grain produce diffuse light. The imaging beam of the semiconductor crystal grain is transferred by the right-angle image transfer prism, and then reflected by the cubic beam splitter and combiner to reach the reference output surface. The outgoing imaging beam has an angular displacement γ to one side of the optical axis. 1 The imaging beam on the side of the semiconductor crystal passes through the side right-angle image rotation prism, and then transmits through the cubic beam splitter and combiner to reach the reference output surface. The outgoing imaging beam also produces an angular displacement γ to the other side of the optical axis. 2 ; The angular displacement of adjacent faces output from the cubic beam splitter / combiner is γ = γ 1 +γ 2 The corresponding spacing between adjacent surfaces of the grains is δ=γx L, where L is the distance between the reflection image transfer prism and the equivalent object surface, and independent images of both surfaces are obtained on the CMOS or CCD camera. The cubic beam splitter and combiner can generate an expected angular displacement γ while combining the images. 1 and γ 2 .

4. A new device for simultaneous and complete equal-path confocal imaging detection of adjacent double-sided crystals of semiconductor cooling devices. Features: The invention comprises a CMOS or CCD camera, a telecentric imaging lens, a cubic beam splitter and image combiner, a semiconductor crystal grain and a transparent glass stage for holding the semiconductor crystal grain, wherein a sky reflection image transfer prism and a side reflection image transfer prism are respectively arranged on the light path between the semiconductor crystal grain and the cubic beam splitter and image combiner, the side reflection image transfer prism and the sky reflection image transfer prism are respectively arranged on the front side of the semiconductor crystal grain and directly above the sky surface, and the cubic beam splitter and image combiner are at the same horizontal height; the side reflection image transfer prism and the cubic beam splitter and image combiner are located on the optical axis of the telecentric imaging lens, and the first surface of the side reflection image transfer prism forms an optical wedge angle with the normal surface of the optical axis of the telecentric imaging lens and is opposite to the first surface of the cubic beam splitter and image combiner, and the second surface of the side reflection image transfer prism is parallel to the side surface of the semiconductor crystal grain. , the inclined surface of the side reflection image transfer prism is tilted to the optical axis of the telecentric imaging lens; the first surface of the sky reflection image transfer prism forms an optical wedge angle with the optical axis of the telecentric imaging lens and is opposite to the second surface of the cubic beam splitter and image combiner, the second surface of the sky reflection image transfer prism is parallel to the sky surface of the semiconductor crystal grain, and the inclined surface of the sky reflection image transfer prism is tilted to the optical axis of the telecentric imaging lens; a coaxial external illumination light source is arranged on the side of the fourth surface opposite to the second surface of the cubic beam splitter and image combiner, and the sky surface and the side surface of the semiconductor crystal grain are respectively imaged on the camera sensor surface with complete equal optical path confocal imaging through the sky reflection image transfer prism, the side reflection image transfer prism, and the cubic beam splitter and image combiner, so as to obtain independent images of the two sides of the semiconductor crystal grain on the CMOS or CCD camera; the optical wedge angle between the sky reflection image transfer prism and the first surface or the second surface of the side reflection image transfer prism is α 1 and α 2 , which is the degree of deviation of the first or second surface of the two reflection image transfer prisms from the right angle. The three angles of the celestial reflection image transfer prism are 45°, 90°-α 1 , 45°+α 1； The three angles of the side reflection prism are 45°, 90°+α 2 、45°-α 2 , wedge angle α 1 and α 2 The double-sided imaging beams are respectively displaced γ to the two sides of the optical axis of the cubic beam splitter and combiner. 1 and γ 2 , and γ 1 With γ 2 The size depends on the refractive index n of the reflection image prism glass and the equivalent glass wedge angle α 1 With α 2 ; The images of adjacent faces of semiconductor grains output from the cubic beam splitter and combiner are separated in space, and the wedge angle α 1 The resulting angular displacement γ 1 = (n-1) x α 1 , γ 2 = (n-1) x α 2 , and the double image angular displacement is γ=γ 1 +γ 2 ; The distance between the center of the cubic beam splitter and combiner and the center of the inclined surface of the side reflection transfer prism is D / 2+d, and the working distance of the side imaging light path is WD=D / 2+d / 2. The cubic beam splitter and combiner and the inclined surface of the ceiling reflection transfer prism are at the same horizontal height. The distance between their centers is D / 2+d, and the working distance of the ceiling imaging light path is WD=D / 2+d / 2. D is the width of the transparent glass stage, and d is the length of the right-angled side of the prism.

5. A new device for simultaneous and complete equal-path confocal imaging detection of adjacent double-sided crystals of semiconductor cooling devices. Features: The invention comprises a CMOS or CCD camera, a telecentric imaging lens, a cubic beam splitter and image combiner, a semiconductor crystal grain and a transparent glass stage for holding the semiconductor crystal grain, wherein a sky reflection image transfer prism and a side reflection image transfer prism are respectively arranged on the optical path between the semiconductor crystal grain and the cubic beam splitter and image combiner, the side reflection image transfer prism and the sky reflection image transfer prism are respectively arranged on the front side of the semiconductor crystal grain and directly above the sky surface, and the cubic beam splitter and image combiner are at the same horizontal height; the side reflection image transfer prism and the cubic beam splitter and image combiner are located on the optical axis of the telecentric imaging lens, and at the same time, the second surface of the side reflection image transfer prism forms an optical wedge angle with the optical axis of the telecentric imaging lens and is opposite to the side surface of the semiconductor crystal grain, the first surface of the side reflection image transfer prism is parallel to the first surface of the cubic beam splitter and image combiner, and ... The inclined surface of the image transfer prism is arranged obliquely with the optical axis of the telecentric imaging lens; the second surface of the sky reflection image transfer prism forms an optical wedge angle with the normal surface of the optical axis of the telecentric imaging lens and is opposite to the sky surface of the semiconductor crystal grain; the first surface of the sky reflection image transfer prism is parallel to the second surface of the cubic beam splitter and image combiner, and the inclined surface of the sky reflection image transfer prism is arranged obliquely with the optical axis of the telecentric imaging lens; a coaxial external illumination light source is arranged beside the fourth surface opposite to the second surface of the cubic beam splitter and image combiner; the sky surface and the side surface of the semiconductor crystal grain are respectively imaged on the camera sensor surface with complete equal optical path confocal imaging through the sky reflection image transfer prism, the side reflection image transfer prism and the cubic beam splitter and image combiner, so as to obtain independent images of the two sides of the semiconductor crystal grain on the CMOS or CCD camera; the optical wedge angle between the sky reflection image transfer prism and the first surface or the second surface of the side reflection image transfer prism is α 1 and α 2 , which is the degree of deviation of the first or second surface of the two reflection image transfer prisms from the right angle. The three angles of the celestial reflection image transfer prism are 45°, 90°-α 1 , 45°+α 1； The three angles of the side reflection prism are 45°, 90°+α 2 、45°-α 2 , wedge angle α 1 and α 2 The double-sided imaging beams are respectively displaced γ to the two sides of the optical axis of the cubic beam splitter and combiner. 1 and γ 2 , and γ 1 With γ 2 The size depends on the refractive index n of the reflection image prism glass and the equivalent glass wedge angle α 1 With α 2 ; The images of adjacent faces of semiconductor grains output from the cubic beam splitter and combiner are separated in space, and the wedge angle α 1 The resulting angular displacement γ 1 = (n-1) x α 1 , γ 2 = (n-1) x α 2 , and the double image angular displacement is γ=γ 1 +γ 2 ; The distance between the center of the cubic beam splitter and combiner and the center of the inclined surface of the side reflection transfer prism is D / 2+d, and the working distance of the side imaging light path is WD=D / 2+d / 2. The cubic beam splitter and combiner and the inclined surface of the ceiling reflection transfer prism are at the same horizontal height. The distance between their centers is D / 2+d, and the working distance of the ceiling imaging light path is WD=D / 2+d / 2. D is the width of the transparent glass stage, and d is the length of the right-angled side of the prism.

6. The new device for simultaneous and complete equal-optical-path confocal imaging detection of adjacent double-sided surfaces of semiconductor cooling device crystals according to claim 4 or 5, Features: The center of the cubic beam splitter and combiner, the center of the reflection surface of the two reflection image transfer prisms, and the center of the semiconductor grain are connected to form a square symmetrical optical path structure with a side length of D / 2+d=37.5mm. D is the width of the transparent glass stage, and d is the side length of the prism. The size of the cubic beam splitter and combiner is 15*15*15mm, which is aligned with the sides of the sky and side reflection image transfer prisms. The wedge angle α of the equivalent glass wedge of the sky and side reflection image transfer prisms is 2°. The three angles of the sky reflection image transfer prism are 45°, 88°, and 47°; the three angles of the side reflection image transfer prism are 45°, 92°, and 43°. The glass material of the sky and side reflection image transfer prisms is K9, and the angular displacement γ is calculated. 1 =γ 2 = (n-1) x α 2 =1.03°, the resulting double image angular displacement is γ=2.06°, the corresponding spatial spacing δ=γxL=1.42mm, focal length f=51.5mm, WD=110 mm, , i is the thickness of the grain; the size of the sky reflection image transfer prism is 15*15*15mm, the size of the side reflection image transfer prism is 15*15*15mm, and the size of the cubic beam splitter and image combiner is 15*15*15mm; the sky imaging optical path working distance WD=D / 2+d / 2 =30mm, the side imaging optical path working distance WD= D / 2+d / 2=30mm, the angular manufacturing tolerance of the cubic beam splitter and image combiner and the image transfer prism is ≤15 arc seconds, and the resulting double image angular displacement error is controlled within 2 arc minutes.

7. A method for detecting semiconductor cooling device crystal grains by simultaneous and complete equal optical path confocal imaging of two adjacent surfaces as claimed in claim 4 or 5, Features: The new device for detecting confocal imaging of adjacent double sides of semiconductor cooling device grains at the same time with completely equal optical path comprises a CMOS or CCD camera, a telecentric imaging lens, a cubic beam splitter and image combiner, a semiconductor grain and a transparent glass stage for holding the semiconductor grain, arranged in the direction of the optical path, a sky reflection image transfer prism and a side reflection image transfer prism are respectively arranged on the optical path between the semiconductor grain and the cubic beam splitter and image combiner, the side reflection image transfer prism and the sky reflection image transfer prism are respectively located on the front side of the semiconductor grain and directly above the sky, the cubic beam splitter and image combiner are at the same horizontal height, the side reflection image transfer prism and the sky reflection image transfer prism are located on the optical axis of the telecentric imaging lens, and the first surface of the side reflection image transfer prism forms an optical wedge angle with the normal surface of the optical axis of the telecentric imaging lens, and forms an optical wedge angle with the first surface of the cubic beam splitter and image combiner. The first surface of the zenith reflection image transfer prism is opposite to the second surface of the cubic beam splitter and combiner, the second surface of the zenith reflection image transfer prism is parallel to the zenith surface of the semiconductor crystal grain, and the inclined surface of the zenith reflection image transfer prism is inclined to the optical axis of the telecentric imaging lens; the first surface of the zenith reflection image transfer prism forms an optical wedge angle with the optical axis of the telecentric imaging lens and is opposite to the second surface of the cubic beam splitter and combiner, the second surface of the zenith reflection image transfer prism is parallel to the zenith surface of the semiconductor crystal grain, and the inclined surface of the zenith reflection image transfer prism is inclined to the optical axis of the telecentric imaging lens; a coaxial external illumination light source is arranged on the side of the fourth surface opposite to the second surface of the cubic beam splitter and combiner, and the zenith surface and the side surface of the semiconductor crystal grain are respectively imaged on the camera sensor surface with complete equal optical path confocal imaging through the zenith reflection image transfer prism, the side reflection image transfer prism, and the cubic beam splitter and combiner, so as to obtain independent images of both sides of the semiconductor crystal grain on the CMOS or CCD camera; during detection, Double-sided lighting light path: The coaxial external illumination light source is divided into two illumination beams when passing through the cubic beam splitter and combiner: one beam of light is reflected by the top surface and then transferred to the image transfer prism to illuminate the top surface of the semiconductor crystal grain to be tested on the transparent glass stage; and the other illumination beam is reflected by the side surface and then transferred to the image transfer prism to illuminate the side surface of the semiconductor crystal grain to be tested. The two illumination beams illuminate two adjacent surfaces of the semiconductor crystal grain respectively. Imaging detection optical path: The two adjacent surfaces of the illuminated semiconductor crystal grain produce diffuse light. The imaging light beam of the semiconductor crystal grain is reflected by the prism and then emitted to one side of the optical axis, which produces an angular displacement γ. 1 , and then reflected by the cubic beam splitter and combiner to reach the reference output surface; while the imaging beam on the side of the semiconductor crystal grain is reflected by the side and the imaging beam emitted by the image transfer prism also produces an angular displacement γ to the other side of the optical axis 2 , and then transmitted through the cubic beam splitter and combiner to reach the reference output surface. The angular displacement of the adjacent surface output from the cubic beam splitter and combiner is γ=γ 1 +γ 2 The corresponding interval of the equivalent space of adjacent surfaces of the grain is δ=γx L, where L is the distance between the reflection transfer prism and the equivalent object surface, and the independent images of both surfaces are obtained on the CMOS or CCD camera. The reflection transfer prism can generate an expected angular displacement γ while transferring the image. 1 and γ 2 .

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