A perovskite photovoltaic cell, a preparation method thereof, and a preparation method of an optoelectronic component

Abstract

The present invention relates to a perovskite photovoltaic cell, which comprises a substrate, a front electrode layer, a first carrier transport layer, a perovskite layer, a second carrier transport layer, and a top electrode layer. A cutting groove P1 is provided on the front electrode layer, and the front electrode layer is cut off by the cutting groove P1. The cutting groove P1 is filled with the same preparation material as the first carrier transport layer. A cutting groove P3 is provided on the top electrode layer, and the bottom of the cutting groove P3 exposes the front electrode layer. Isolation layers are respectively provided on the sides of the perovskite layer on both sides of the cutting groove P3 to shield the perovskite layer. A preparation material the same as the top electrode layer is filled on one side of the cutting groove P3 and is electrically connected to the top electrode layer. The present invention also discloses a preparation method of the perovskite photovoltaic cell. The isolation layer is prepared in advance in the present invention to protect the subsequently prepared perovskite layer, effectively avoiding the problems of perovskite material degradation and decreased electrode conductivity caused by the exposure of the side surface of the perovskite thin film.

Description

Technical Field

[0001] The present invention belongs to the technical field of perovskite photovoltaic cell preparation, and particularly relates to a perovskite photovoltaic cell, a preparation method thereof, and a preparation method of a photovoltaic module. Background Art

[0002] Perovskite is a general term for a class of crystalline materials with an ABX3 structure. It has been found that some halide perovskite materials have excellent semiconductor properties and can achieve high-quality mutual conversion of light energy and electrical energy. Therefore, they can be applied in multiple fields such as photovoltaic cells, light-emitting diodes, and detectors.

[0003] The perovskite tandem module is the main structure of a large-area perovskite optoelectronic conversion device. Currently, after the perovskite thin film is prepared, it is usually isolated into several individual small parts and then connected in series to improve the performance of the entire active area. However, the exposed side of the perovskite during the cutting process has a high reaction activity and is extremely prone to degradation due to reaction with water and oxygen. On the other hand, the direct contact between the side perovskite and the metal electrode leads to the formation of metal halides, resulting in a decrease in the conductivity of the electrode.

[0004] The patent with the publication number CN110534651A discloses a perovskite solar cell and module and a preparation method thereof, a protection method of coating an isolation layer on the side after cutting the active layer. This method has many defects in practical applications. For example, the dispensing operation has a long exposure time in the air, resulting in serious erosion of the perovskite by water and oxygen; the high-energy ultraviolet rays used for glue curing can cause perovskite degradation; there is volume expansion or contraction after the glue is cured, affecting the protection effect of the perovskite side. And using the evaporation method to prepare the isolation layer has very high requirements for the accuracy of the mask and is not applicable in actual production. Therefore, the method of cutting and segmenting after preparing the active layer in the traditional process is not applicable to perovskite thin film modules. Summary of the Invention

[0005] The technical problem to be solved by the present invention is to provide a new large-area perovskite photovoltaic cell, a preparation method thereof, and a preparation method of a photovoltaic module. First, prepare the isolation layer and then prepare the perovskite layer, and combine multiple isolation treatments in the isolation layer area to prepare the perovskite tandem module. Not only is the preparation method of the isolation layer more diverse, but also the problem of degradation of the perovskite material due to side exposure during the cutting process of the perovskite layer in the existing process is avoided.

[0006] The present invention is implemented as follows: A perovskite photovoltaic cell is provided. Its internal structure includes a substrate, a front electrode layer, a first carrier transport layer, a perovskite layer, a second carrier transport layer, and a top electrode layer in sequence from bottom to top. On the front electrode layer, n - 1 cutting grooves P1 are provided. The cutting grooves P1 divide the front electrode layer. The cutting grooves P1 are filled with the same preparation material as the first carrier transport layer and are electrically connected to the first carrier transport layer. On the top electrode layer, n - 1 cutting grooves P3 are provided. Each cutting groove P3 is located on one side of the corresponding cutting groove P1. The bottom of the cutting groove P3 exposes the front electrode layer. On the sides of the perovskite layer on both sides of the cutting groove P3, isolation layers are respectively provided to shield it. On one side of the cutting groove P3, the same preparation material as the top electrode layer is filled and is electrically connected to the top electrode layer. The perovskite photovoltaic cell is divided into n perovskite photovoltaic sub-cells under the combined action of the n - 1 cutting grooves P1 and the cutting grooves P3.

[0007] The present invention is implemented as follows: A perovskite photovoltaic cell is provided. Its internal structure includes a substrate, a front electrode layer, a first carrier transport layer, a perovskite layer, a second carrier transport layer, and a top electrode layer in sequence from bottom to top. On the first carrier transport layer, n - 1 cutting grooves P1 are provided. The cutting grooves P1 divide both the front electrode layer and the first carrier transport layer. The cutting grooves P1 are filled with the same preparation material as the perovskite layer and are electrically connected to the perovskite layer. On the top electrode layer, n - 1 cutting grooves P3 are provided. Each cutting groove P3 is located on one side of the corresponding cutting groove P1. The bottom of the cutting groove P3 exposes the front electrode layer. On the sides of the perovskite layer on both sides of the cutting groove P3, isolation layers are respectively provided to shield it. On one side of the cutting groove P3, the same preparation material as the top electrode layer is filled and is electrically connected to the top electrode layer. The perovskite photovoltaic cell is divided into n perovskite photovoltaic sub-cells under the combined action of the n - 1 cutting grooves P1 and the cutting grooves P3.

[0008] The present invention is implemented as follows: A preparation method of the perovskite photovoltaic cell as described above is provided, including the following steps:

[0009] Step 1: Scratch the front electrode layer prepared on the substrate to obtain the cutting grooves P1;

[0010] Step 2: Use a mask plate to prepare an isolation area with a thickness not less than the sum of the thicknesses of the first carrier transport layer and the perovskite layer at the position of the cutting groove P3 on one side of the cutting groove P1. The width of the hollowed area of the mask plate is greater than the width of the cutting groove P3;

[0011] Step 3: Use a mask plate opposite to the hollowed area in Step 2 to sequentially prepare the first carrier transport layer, the perovskite layer, and the second carrier transport layer;

[0012] Step 4: Scratch the middle area of the cut isolation area to obtain a cutting wire groove P2. There are isolation layers reserved on the left and right sides of the cutting wire groove P2, and the front electrode layer is exposed at the bottom.

[0013] Step 5: Prepare a top electrode layer on the substrate film processed in Step 4.

[0014] Step 6: Scratch the area where the cutting wire groove P2 is located to obtain a cutting wire groove P3. The front electrode layer is also exposed at the bottom. The width of the cutting wire groove P3 is smaller than that of the cutting wire groove P2. On the side of the cutting wire groove P3 close to the cutting wire groove P1, there is a preparation material for the top electrode layer reserved, and on the other side, it is adjacent to the isolation layer.

[0015] The present invention is implemented as follows. A preparation method of a perovskite photovoltaic cell as described above is provided, including the following steps:

[0016] Step I: Scratch the pre-prepared front electrode layer on the substrate to obtain a cutting wire groove P1.

[0017] Step II: Prepare a first carrier transport layer on the substrate film processed in Step I.

[0018] Step III: Use a mask plate to prepare an isolation area with a thickness not less than that of the perovskite layer on one side of the cutting wire groove P1 and at the position where the cutting wire groove P3 is located. The width of the hollowed area of the mask plate is greater than the width of the cutting wire groove P3.

[0019] Step IV: Use a mask plate opposite to the hollowed area in Step III to sequentially prepare a perovskite layer and a second carrier transport layer.

[0020] Step V: Scratch the middle area of the cut isolation area to obtain a cutting wire groove P2. There are isolation layers reserved on the left and right sides of the cutting wire groove P2, and the front electrode layer is exposed at the bottom.

[0021] Step VI: Prepare a top electrode layer on the substrate film processed in Step V.

[0022] Step VII: Scratch the area where the cutting wire groove P2 is located to obtain a cutting wire groove P3. The front electrode layer is also exposed at the bottom. The width of the cutting wire groove P3 is smaller than that of the cutting wire groove P2. On the side of the cutting wire groove P3 close to the cutting wire groove P1, there is a preparation material for the top electrode layer reserved, and on the other side, it is adjacent to the isolation layer.

[0023] The present invention is implemented as follows. A preparation method of a perovskite photovoltaic cell as described above is provided, including the following steps:

[0024] Step 1. On the pre-prepared front electrode layer of the substrate, use a mask or screen printing to prepare an isolation area at the position where the cutting groove P3 is located, with a thickness not less than the sum of the thicknesses of the first charge transport layer and the perovskite layer. The width of the hollowed-out area of the mask is greater than the width of the cutting groove P3;

[0025] Step 2. Prepare the first charge transport layer on the film processed in Step 1, and simultaneously scribe the first charge transport layer and the front electrode layer to obtain the cutting groove P1, the bottom of which exposes the substrate;

[0026] Step 3. Sequentially prepare the perovskite layer and the second charge transport layer on the first charge transport layer processed in Step 2;

[0027] Step 4. Scribe the middle area of the cutting isolation area to obtain the cutting groove P2. There are isolation layers reserved on both the left and right sides of the cutting groove P2, and its bottom exposes the front electrode layer;

[0028] Step 5. Prepare the top electrode layer on the substrate film processed in Step 4;

[0029] Step 6. Scribe the area where the cutting groove P2 is located to obtain the cutting groove P3, the bottom of which also exposes the front electrode layer. The width of the cutting groove P3 is smaller than that of the cutting groove P2. On the side of the cutting groove P3 close to the cutting groove P1, there is a preparation material for the top electrode layer reserved, and on the other side, it is adjacent to the isolation layer.

[0030] The present invention is implemented as follows. A method for preparing an optoelectronic component is provided. The internal structure of the optoelectronic component includes a substrate, and from bottom to top on the substrate, there are successively a front electrode layer, a first charge transport layer, a perovskite layer, a second charge transport layer, and a top electrode layer, including the following steps:

[0031] Step S1. Scribe the front electrode layer to obtain the first groove, and then prepare the first charge transport layer; use a mask to prepare an isolation area with a thickness not less than the thickness of the perovskite layer at one side of the first groove and at the position where the third groove is located. The width of the hollowed-out area of the mask is greater than the width of the third groove;

[0032] Step S2. Use a mask with a hollowed-out area opposite to that in Step S1 to sequentially prepare the perovskite layer and the second charge transport layer;

[0033] Step S3. Scribe the middle area of the isolation area to obtain the second groove, and there are isolation layers reserved on both the left and right sides of the second groove;

[0034] Step S4. Prepare the top electrode layer on the film processed in Step S3, scribe the area where the second groove is located to obtain the third groove, the width of the third groove is smaller than that of the second groove, and on one side of the third groove, there is a preparation material for the top electrode layer reserved, and on the other side, it is adjacent to the isolation layer.

[0035] The present invention is implemented as follows. A method for preparing an optoelectronic component is provided. The internal structure of the optoelectronic component includes a substrate, and from bottom to top on the substrate, there are successively a front electrode layer, a first carrier transport layer, a perovskite layer, a second carrier transport layer, and a top electrode layer. The method includes the following steps:

[0036] Step S5: First, prepare an isolation region on the front electrode layer. The thickness of the isolation region is greater than the sum of the thicknesses of the first carrier transport layer and the perovskite layer, and its width is greater than the width of the second wire groove; prepare the first carrier transport layer in the region outside the isolation region; simultaneously scribe the first carrier transport layer and the front electrode layer to obtain a first wire groove;

[0037] Step S6: Successively prepare a perovskite layer and a second carrier transport layer on the first carrier transport layer;

[0038] Step S7: Scribe the middle region of the isolation region to obtain a second wire groove, and isolation layers are respectively reserved on the left and right sides of the second wire groove;

[0039] Step S8: Prepare a top electrode layer on the film after the treatment in Step S7, scribe the region where the second wire groove is located to obtain a third wire groove. The width of the third wire groove is smaller than that of the second wire groove, and the preparation material of the top electrode layer is reserved on one side of the third wire groove, and the other side is adjacent to the isolation layer.

[0040] Compared with the prior art, the perovskite photovoltaic cell, its preparation method, and the preparation method of the optoelectronic component of the present invention have the following characteristics: An isolation layer is prepared in advance to protect the subsequently prepared perovskite layer, effectively avoiding the problems of perovskite material degradation and decreased electrode conductivity caused by the exposure of the side surface of the perovskite film in the cutting process used in the traditional preparation of series-connected perovskite photovoltaic components. Description of the Drawings

[0041] Figure 1 It is a schematic plan view of the internal structure of the perovskite photovoltaic cells of Embodiment 1 and Embodiment 3 of the present invention;

[0042] Figure 2 It is a schematic plan view of the internal structure of the perovskite photovoltaic cells of Embodiment 2 and Embodiment 5 of the present invention;

[0043] Figure 3 It is a schematic plan view of the internal structure of the perovskite photovoltaic cell of Embodiment 4 of the present invention;

[0044] Figure 4 It is a schematic plan view of the internal structure of the optoelectronic component of Embodiment 6 of the present invention;

[0045] Figure 5 It is a schematic plan view of the internal structure of the optoelectronic component of Embodiment 7 of the present invention. Detailed Embodiments

[0046] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention more clear and understandable, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0047] Embodiment 1

[0048] Please refer to Figure 1 As shown, in the first preferred embodiment of the perovskite photovoltaic cell of the present invention, its internal structure sequentially includes a substrate 1, a front electrode layer 2, a first carrier transport layer 3, a perovskite layer 4, a second carrier transport layer 5, a blocking layer 6, and a top electrode layer 7 from bottom to top.

[0049] On the front electrode layer 2, n - 1 cutting grooves P1 are provided. The cutting grooves P1 cut off the front electrode layer 2, and the cutting grooves P1 are filled with the same preparation material as the first carrier transport layer 3 and are electrically connected to the first carrier transport layer 3. On the top electrode layer 7, n - 1 cutting grooves P3 are provided. Each cutting groove P3 is located 75 μm to 350 μm to the right of the corresponding cutting groove P1, and the bottom of the cutting groove P3 exposes the front electrode layer 2.

[0050] On the side surfaces of the perovskite layer 4 on both sides of the cutting groove P3, isolation layers 8 are respectively provided to shield it. On one side of the cutting groove P3, the same preparation material as the top electrode layer 7 is filled and is electrically connected to the top electrode layer 7. The perovskite photovoltaic cell is divided into n perovskite photovoltaic sub - cells 9 under the combined action of the n - 1 cutting grooves P1 and the cutting grooves P3. On one side of each cutting groove P3 away from its corresponding cutting groove P1, an isolation layer 8 is provided to shield one side surface of the perovskite layer 4, and on the other side surface of the perovskite layer 4, another isolation layer 8 is provided to shield it. On the other side of the cutting groove P3, the same preparation material as the top electrode layer 7 is filled and is electrically connected to the top electrode layer 7, and the other isolation layer 8 is located between the perovskite layer 4 and the preparation material of the top electrode layer 7 filled in the cutting groove P3.

[0051] The preparation materials of the isolation layer 8 include any one of organic substances such as polymethyl methacrylate, polyvinyl butyral resin, ethylene methacrylic acid copolymer, polyethylene naphthalate, polyethylene terephthalate, tetrafluoroethylene copolymer, polyvinylidene chloride, polyvinylidene fluoride, and polyamide, or any one of inorganic substances such as magnesium oxide, aluminum oxide, silicon oxide, zinc sulfide, zirconium acetylacetonate, C3N4, boron nitride, carbon materials and their derivatives. The thickness of the isolation layer 8 exceeds the film thickness of the perovskite layer 4, and its film thickness is 400 nm to 1000 nm, and its width is 50 μm to 200 μm. The preparation method of the isolation layer 8 adopts any one of evaporation coating, spraying, screen printing, magnetron sputtering, dispensing coating, and atomic layer deposition processing methods.

[0052] The preparation materials of the perovskite layer 4 are halide crystals with an ABX3 type structure. Among them, A includes at least one of monovalent cations such as methylammonium (CH3NH3 + ), formamidinium (CH(NH2)2 + ), and cesium (Cs + ); B includes at least one of divalent cations such as lead ion (Pb 2 + ), stannous ion (Sn 2+ ); X includes at least one of halogen anions such as Cl - , Br - , and I - .

[0053] Ion dopants are added to the preparation materials of the perovskite layer 4. The ion dopants include at least one of organic amine cations such as guanidinium cation (C(NH2)3 + ), butylammonium cation (CH3(CH2)3NH3 + ), and phenethylammonium cation (C6H5(CH2)2NH3 + ), or at least one of cations of inorganic elements such as lithium, sodium, potassium, rubidium, boron, silicon, germanium, arsenic, antimony, beryllium, magnesium, calcium, strontium, barium, aluminum, indium, gallium, tin, thallium, lead, bismuth, lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, scandium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, yttrium, zirconium, niobium, molybdenum, ruthenium, rhodium, palladium, silver, cadmium, hafnium, tantalum, tungsten, rhenium, osmium, iridium, platinum, and gold, or also includes at least one of anions such as thiocyanate (SCN - ) and acetate ion (CH3COO - ).

[0054] Among them, the width of the cutting groove P1 is 25 μm to 200 μm, the width of the cutting groove P3 is 15 μm to 300 μm, and the distance between the cutting groove P1 and the nearest isolation layer 8 is 25 μm to 100 μm.

[0055] Example 2

[0056] Please refer to Figure 2 As shown, the second preferred embodiment of the perovskite photovoltaic cell of the present invention includes, from bottom to top, a substrate 1, a front electrode layer 2, a first carrier transport layer 3, a perovskite layer 4, a second carrier transport layer 5, a blocking layer 6, and a top electrode layer 7 in sequence inside its structure.

[0057] On the first carrier transport layer 3, n - 1 cutting grooves P1 are provided, and the cutting grooves P1 simultaneously cut through both the first carrier transport layer 3 and the front electrode layer 2. The cutting grooves P1 are filled with the same preparation material as the perovskite layer 4 and are electrically connected to the perovskite layer 4. On the top electrode layer 7, n - 1 cutting grooves P3 are provided, and each cutting groove P3 is located 75 μm to 350 μm to the left of the corresponding cutting groove P1, and the bottom of the cutting groove P3 exposes the front electrode layer 2.

[0058] On the sides of the perovskite layer 4 on both sides of the cutting groove P3, isolation layers 8 are respectively provided to shield it. On one side of the cutting groove P3, the same preparation material as the top electrode layer 7 is filled and is electrically connected to the top electrode layer 7. The perovskite photovoltaic cell is divided into n perovskite photovoltaic sub - cells 9 under the combined action of the n - 1 cutting grooves P1 and the cutting grooves P3. On the side of each cutting groove P3 away from its corresponding cutting groove P1, an isolation layer 8 is provided to shield one side of the perovskite layer 4, and on the other side of the perovskite layer 4, another isolation layer 8 is provided to shield it as well. On the other side of the cutting groove P3, the same preparation material as the top electrode layer 7 is filled and is electrically connected to the top electrode layer 7, and the isolation layer 8 is located between the perovskite layer 4 and the preparation material of the top electrode layer 7 filled in the cutting groove P3.

[0059] Other structures and features are the same as those in Example 1 and will not be elaborated here.

[0060] Example 3

[0061] Please refer to again Figure 1 As shown, the first embodiment of the preparation method of the perovskite photovoltaic cell of Example 1 of the present invention includes the following steps:

[0062] Step 11: The conductive glass substrate 1 deposited with the ITO front electrode layer 2 is scribed (laser cutting), and 100 μm width of ITO is etched away to obtain the cutting groove P1. Then the conductive glass substrate 1 is cleaned, dried with nitrogen, and treated with ultraviolet ozone.

[0063] The scribing methods include processing methods such as laser cutting and physical scribing, and the laser cutting method is adopted in this step. The same applies hereinafter.

[0064] Step 12: Cover a mask plate on the conductive substrate 1 processed in Step 11. The hollowed-out area of the mask plate corresponds to the position where the cutting groove P3 is located. The width of the hollowed-out area of the mask plate is 150 μm, and the width of the hollowed-out area of the mask plate is greater than the width of the cutting groove P3. It is located 50 μm to the right of the cutting groove P1. Use magnetron sputtering to deposit 500 nm thick silicon oxide as the isolation area. The thickness of the isolation area is not less than the sum of the thicknesses of the first carrier transport layer 3, the perovskite layer 4, the second carrier transport layer 5, and the barrier layer 6.

[0065] Step 13: Use a mask plate opposite to the hollowed-out area in Step 12 to successively prepare the first carrier transport layer 3, the perovskite layer 4, the second carrier transport layer 5, and the barrier layer 6 on the ITO front electrode layer 2.

[0066] Spray 20 nm hole transport material NiOx on the ITO front electrode layer 2 as the first carrier transport layer 3 (hole transport layer). After drying, keep the temperature of the substrate 1 at 70 °C, spray 0.7 mol / L lead iodide solution, use N,N-dimethylformamide and dimethyl sulfoxide with a volume ratio of 9:1 as the mixed solvent, and anneal at 70 °C for 10 min to obtain a 200 nm thick lead iodide layer. Spin-coat a mixed isopropanol solution of formamidinium hydroiodide and methylammonium hydrochloride with a molar ratio of 10:1 on it. Among them, the concentration of formamidinium hydroiodide is 60 mg / mL. Then anneal at 150 °C for 60 min. After cooling, quickly dissolve and remove the residual formamidinium hydroiodide and methylammonium hydrochloride on the surface with tert-butanol, and then anneal at 100 °C for 10 min to obtain the perovskite layer 4. Then spray 30 nm thick PC 71 BM, 5 nm thick zirconium acetylacetonate as the second carrier transport layer 5 (electron transport layer) and the barrier layer 6.

[0067] Step 14: Adopt a laser etching method to cut the middle area of the isolation area to obtain a cutting groove P2 with a width of 100 μm. There are isolation layers 8 with a width of 25 μm reserved on both the left and right sides of the cutting groove P2, and the front electrode layer 2 is exposed at the bottom.

[0068] Step 15: Vacuum deposit 150 nm thick silver on the substrate 1 film processed in Step 14 as the top electrode layer 7.

[0069] Step 16: Adopt a laser etching method to cut the area where the cutting groove P2 is located to obtain a cutting groove P3 with a width of 40 μm, and the front electrode layer 2 is also exposed at the bottom. The width of the cutting groove P3 is smaller than that of the cutting groove P2. The laser etches away the top electrode layer 7 in the cutting groove P3. On the side (left side) of the cutting groove P3 close to the cutting groove P1, the preparation material of the top electrode layer 7 is retained, and on the other side (right side), it is adjacent to the isolation layer 8.

[0070] Example 4

[0071] Please refer to Figure 3 shown in the second embodiment of the preparation method of the perovskite photovoltaic cell according to Embodiment 1 of the present invention, which comprises the following steps:

[0072] Step 21: Laser-etch the conductive glass substrate 1 deposited with the FTO front electrode layer 2, etch away the FTO with a width of 150 μm to obtain the cutting groove P1. Then clean the conductive glass substrate 1, dry it with nitrogen, and perform ultraviolet ozone treatment.

[0073] Step 22: Deposit 30 nm of SnO2 as the first carrier transport layer 3 (electron transport layer) on the substrate 1 film processed in Step 21.

[0074] Step 23: Cover a mask plate on the conductive substrate 1 processed in Step 22. The hollowed-out area of the mask plate corresponds to the position where the cutting groove P3 is located. The width of the hollowed-out area of the mask plate is 400 μm, and the width of the hollowed-out area of the mask plate is greater than the width of the cutting groove P3, and it is located 10 μm to the right of the cutting groove P1. Use magnetron sputtering to deposit 750 nm thick silicon nitride as the isolation area. The thickness of the isolation area is not less than the sum of the thicknesses of the perovskite layer 4, the second carrier transport layer 5, and the barrier layer 6. Then evaporate 20 nm thick hydrophobic material polystyrene on the surface of the isolation layer 8.

[0075] Step 24: Sequentially prepare the perovskite layer 4, the second carrier transport layer 5, and the barrier layer 6 on the first carrier transport layer 3.

[0076] Keep the temperature of the substrate 1 at 100 °C, and continuously slit-coat the perovskite precursor solution Cs 0.15 FA 0.85 PbI3 onto the first carrier transport layer 3. Among them, the concentration of the solution is 1 mol / L, and the solvent is 1,4-butyrolactone and a small amount of N-methylpyrrolidone. Anneal at 100 °C for 30 min to obtain a 600 nm thick perovskite layer 4. Dissolve the polystyrene with chlorobenzene to make the perovskite material on its surface fall off, and then blow the surface of the film clean with nitrogen.

[0077] Then spray 100 nm thick Spiro-MeOTAD (doped with lithium bis(trifluoromethanesulfonyl)imide, tert-butylpyridine) as the second carrier transport layer 5 (hole transport layer), and evaporate 20 nm thick MoO3 as the barrier layer 6.

[0078] Step 25: Adopt a laser-etching method to cut the middle area of the isolation area to obtain a cutting groove P2 with a width of 200 μm. Keep 100 μm wide isolation layers 8 on both the left and right sides of the cutting groove P2, and expose the front electrode layer 2 at the bottom.

[0079] Step 26: Vacuum deposit 150 nm thick copper on the substrate 1 film after the treatment in Step 25 as the top electrode layer 7.

[0080] Step 27: Use laser etching to cut the area where the cutting groove P2 is located to obtain a cutting groove P3 with a width of 100 μm, and its bottom also exposes the front electrode layer 2. The width of the cutting groove P3 is smaller than that of the cutting groove P2, and the laser etches away the top electrode layer 7 in the cutting groove P3. On one side of the cutting groove P3 close to the cutting groove P1, the preparation material of the top electrode layer 7 is retained, and on the other side, it is adjacent to the isolation layer 8.

[0081] Example 5

[0082] Please refer to Figure 2 shown. The first embodiment of the preparation method of the perovskite photovoltaic cell according to the second embodiment of the present invention includes the following steps:

[0083] Step 31: Clean the conductive flexible PEN substrate 1 with the deposited AZO front electrode layer 2, dry it with nitrogen, and perform ultraviolet ozone treatment. Use the screen printing method to deposit polyvinylidene fluoride with a thickness of 550 nm and a width of 300 μm on the AZO conductive glass substrate 1 as the isolation area, and the width of adjacent isolation areas is 10 mm. The thickness is not less than the sum of the thicknesses of the first carrier transport layer 3, the perovskite layer 4, and the second carrier transport layer 5, and the width of adjacent isolation areas is greater than the width of the cutting groove P3.

[0084] Step 32: Coating 20 nm thick PEDOT:PSS on the film processed in Step 31 as the first carrier transport layer 3 (hole transport layer), and performing laser etching on the first carrier transport layer 3 to obtain a cutting groove P1, whose bottom exposes the substrate 1. The cutting groove P1 is 20 μm to the right of the isolation area, and its width is 50 μm.

[0085] Step 33: Sequentially prepare the perovskite layer 4, the second carrier transport layer 5, and the barrier layer 6 on the first carrier transport layer 3 after the treatment in Step 32.

[0086] Coat a 1.2 mol / L solution of MAPbI3 methylamine acetate on the surface of the first carrier transport layer 3, anneal at 100 °C for 10 minutes to obtain a 500 nm perovskite layer. Then evaporate 30 nm of C 60 and 20 nm of chromium as the second carrier transport layer 5 (electron transport layer) and the barrier layer 6.

[0087] Step 34: Use laser etching to cut the middle area of the isolation area to obtain a cutting groove P2 with a width of 200 μm. On the left and right sides of the cutting groove P2, isolation layers 8 with a width of 50 μm are respectively retained, and its bottom exposes the front electrode layer 2.

[0088] Step 35: Magnetron sputter ITO with a thickness of 100 nm on the base film after the treatment in Step 4 as the top electrode layer 7.

[0089] Step 36: Use laser etching to cut the area where the cutting groove P2 is located to obtain a cutting groove P3 with a width of 100 μm, and its bottom also exposes the front electrode layer 2. The width of the cutting groove P3 is smaller than that of the cutting groove P2. The laser etches away the top electrode layer 7 in the cutting groove P3, and the preparation material of the top electrode layer 7 is reserved on one side of the cutting groove P3 close to the cutting groove P1, and the other side is adjacent to the isolation layer 8.

[0090] Example 6

[0091] Please refer to Figure 4 As shown in the first embodiment of the preparation method of the optoelectronic component of the present invention, the internal structure of the optoelectronic component includes a base 1, and from bottom to top on the base 1, there are successively a front electrode layer 2, a first carrier transport layer 3, a perovskite layer 4, a second carrier transport layer 5, and a top electrode layer 7, including the following steps:

[0092] Step S1: Scratch the front electrode layer 2 to obtain a first groove 10, and then prepare the first carrier transport layer 3; use a mask plate to prepare an isolation area with a thickness not less than that of the perovskite layer 4 at a position on one side of the first groove 10 and where the third groove 12 is located. The width of the hollowed-out area of the mask plate is greater than the width of the third groove 12.

[0093] Step S2: Use a mask plate opposite to the hollowed-out area in Step S1 to successively prepare the perovskite layer 4 and the second carrier transport layer 5.

[0094] Step S3: Laser cut the middle area of the isolation area to obtain a second groove 11, and isolation layers 8 are reserved on the left and right sides of the second groove 11 respectively.

[0095] Step S4: Prepare the top electrode layer 7 on the film after the treatment in Step S3, laser cut the area where the second groove 11 is located to obtain a third groove 12. The width of the third groove 12 is smaller than that of the second groove 11. The laser etches away the top electrode layer 7 in the third groove 12, and the preparation material of the top electrode layer 7 is reserved on one side of the third groove 12, and the other side is adjacent to the isolation layer 8.

[0096] The internal structure of the optoelectronic component shown in this embodiment can be applied to devices involving perovskite materials such as light-emitting diodes, detectors, and field-effect transistors.

[0097] Example 7

[0098] Please refer to Figure 5As shown, the second embodiment of the preparation method of the optoelectronic component of the present invention, the internal structure of the optoelectronic component includes a substrate 1, and from bottom to top on the substrate, there are a front electrode layer 2, a first carrier transport layer 3, a perovskite layer 4, a second carrier transport layer 5, and a top electrode layer 7 in sequence, including the following steps:

[0099] Step S5: First, prepare an isolation area on the front electrode layer 2. The thickness of the isolation area is not less than the sum of the thicknesses of the first carrier transport layer 3, the perovskite layer 4, and the second carrier transport layer 5, and its width is greater than the width of the second wire groove 11. Prepare the first carrier transport layer 3 in the area outside the isolation area. Simultaneously perform laser etching on the first carrier transport layer 3 and the front electrode layer 2 to obtain the first wire groove 10.

[0100] Step S6: Sequentially prepare the perovskite layer 4 and the second carrier transport layer 5 on the first carrier transport layer 3.

[0101] Step S7: Perform laser cutting on the middle area of the isolation area to obtain the second wire groove 11, and isolation layers 8 are respectively reserved on the left and right sides of the second wire groove 11.

[0102] Step S8: Prepare the top electrode layer 7 on the film after the treatment in Step S7, perform laser cutting on the area where the second wire groove 11 is located to obtain the third wire groove 12. The width of the third wire groove 12 is smaller than that of the second wire groove 11. The laser etches away the top electrode layer 7 in the third wire groove 12, and the preparation material of the top electrode layer 7 is reserved on one side of the third wire groove 12, and the other side is adjacent to the isolation layer 8.

[0103] Other structures and features are the same as those in Embodiment 6 and will not be elaborated.

[0104] The above are only the preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent replacements, and improvements made within the spirit and principles of the present invention shall be included within the protection scope of the present invention.

Claims

1. A method for preparing a perovskite photovoltaic cell, characterized in that, The perovskite photovoltaic cell has an internal structure that, from bottom to top, sequentially includes a substrate, a front electrode layer, a first carrier transport layer, a perovskite layer, a second carrier transport layer, and a top electrode layer. On the front electrode layer, n - 1 cutting grooves P1 are provided. The cutting grooves P1 divide the front electrode layer. The cutting grooves P1 are filled with the same preparation material as the first carrier transport layer and are electrically connected to the first carrier transport layer. On the top electrode layer, n - 1 cutting grooves P3 are provided. Each cutting groove P3 is located on one side of the corresponding cutting groove P1. The bottom of the cutting groove P3 exposes the front electrode layer. On the sides of the perovskite layer on both sides of the cutting groove P3, isolation layers are respectively provided to shield it. On one side of the cutting groove P3, the same preparation material as the top electrode layer is filled and is electrically connected to the top electrode layer. The perovskite photovoltaic cell is divided into n perovskite photovoltaic sub-cells under the combined action of the n - 1 cutting grooves P1 and the cutting grooves P3; The preparation method includes the following steps: Step 1: Scratch the pre-prepared front electrode layer on the substrate to obtain the cutting grooves P1; Step 2: Use a mask plate to prepare an isolation area with a thickness not less than the sum of the thicknesses of the first carrier transport layer and the perovskite layer at a position on one side of the cutting groove P1 where the cutting groove P3 is located. The width of the hollowed-out area of the mask plate is greater than the width of the cutting groove P3; Step 3: Use a mask plate opposite to the hollowed-out area in Step 2 to sequentially prepare the first carrier transport layer, the perovskite layer, and the second carrier transport layer; Step 4: Scratch the middle area of the isolation area to obtain the cutting groove P2. Isolation layers are respectively reserved on the left and right sides of the cutting groove P2, and its bottom exposes the front electrode layer; Step 5: Prepare the top electrode layer on the substrate film processed in Step 4; Step 6: Scratch the area where the cutting groove P2 is located to obtain the cutting groove P3, and its bottom also exposes the front electrode layer. The width of the cutting groove P3 is smaller than that of the cutting groove P2. On the side of the cutting groove P3 close to the cutting groove P1, the preparation material of the top electrode layer is reserved, and on the other side, it is adjacent to the isolation layer.

2. A method for preparing a perovskite photovoltaic cell, characterized in that, The perovskite photovoltaic cell has an internal structure that, from bottom to top, sequentially includes a substrate, a front electrode layer, a first carrier transport layer, a perovskite layer, a second carrier transport layer, and a top electrode layer. On the front electrode layer, n - 1 cutting grooves P1 are provided. The cutting grooves P1 divide the front electrode layer. The cutting grooves P1 are filled with the same preparation material as the first carrier transport layer and are electrically connected to the first carrier transport layer. On the top electrode layer, n - 1 cutting grooves P3 are provided. Each cutting groove P3 is located on one side of the corresponding cutting groove P1. The bottom of the cutting groove P3 exposes the front electrode layer. On the sides of the perovskite layer on both sides of the cutting groove P3, isolation layers are respectively provided to shield it. On one side of the cutting groove P3, the same preparation material as the top electrode layer is filled and is electrically connected to the top electrode layer. The perovskite photovoltaic cell is divided into n perovskite photovoltaic sub-cells under the combined action of the n - 1 cutting grooves P1 and the cutting grooves P3; The preparation method includes the following steps: Step Ⅰ: Scratch the pre-prepared front electrode layer on the substrate to obtain a cutting groove P1; Step Ⅱ: Prepare a first carrier transport layer on the substrate film processed in Step Ⅰ; Step Ⅲ: Use a mask plate to prepare an isolation region with a thickness not less than that of the perovskite layer on one side of the cutting groove P1 and at the position where the cutting groove P3 is located. The width of the hollowed-out area of the mask plate is greater than the width of the cutting groove P3; Step Ⅳ: Use a mask plate opposite to the hollowed-out area in Step Ⅲ to sequentially prepare a perovskite layer and a second carrier transport layer; Step Ⅴ: Scratch the middle area of the cut isolation region to obtain a cutting groove P2. Isolation layers are respectively reserved on the left and right sides of the cutting groove P2, and the front electrode layer is exposed at the bottom; Step Ⅵ: Prepare a top electrode layer on the substrate film processed in Step Ⅴ; Step Ⅶ: Scratch the area where the cutting groove P2 is located to obtain a cutting groove P3. The front electrode layer is also exposed at the bottom. The width of the cutting groove P3 is smaller than that of the cutting groove P2. The preparation material of the top electrode layer is reserved on one side of the cutting groove P3 close to the cutting groove P1, and the other side is adjacent to the isolation layer.

3. A preparation method of a perovskite photovoltaic cell, characterized in that, For the perovskite photovoltaic cell, its internal structure sequentially includes a substrate, a front electrode layer, a first carrier transport layer, a perovskite layer, a second carrier transport layer, and a top electrode layer from bottom to top. There are n - 1 cutting grooves P1 provided on the first carrier transport layer. The cutting grooves P1 simultaneously cut off the front electrode layer and the first carrier transport layer. The cutting grooves P1 are filled with the same preparation material as the perovskite layer and are electrically connected to the perovskite layer. There are n - 1 cutting grooves P3 provided on the top electrode layer. Each cutting groove P3 is located on one side of the corresponding cutting groove P1. The front electrode layer is exposed at the bottom of the cutting groove P3. Isolation layers are respectively provided on the side surfaces of the perovskite layer on both sides of the cutting groove P3 to shield it. The same preparation material as the top electrode layer is filled on one side of the cutting groove P3 and is electrically connected to the top electrode layer. The perovskite photovoltaic cell is divided into n perovskite photovoltaic sub-cells under the combined action of the n - 1 cutting grooves P1 and the cutting grooves P3; The preparation method includes the following steps: Step 1: Use a mask plate or screen printing on the pre-prepared front electrode layer on the substrate to prepare an isolation region with a thickness not less than the sum of the thicknesses of the first carrier transport layer and the perovskite layer at the position where the cutting groove P3 is located. The width of the hollowed-out area of the mask plate is greater than the width of the cutting groove P3; Step 2: Prepare a first carrier transport layer on the film processed in Step 1. Scratch both the first carrier transport layer and the front electrode layer to obtain a cutting groove P1, and the substrate is exposed at the bottom; Step 3: Sequentially prepare a perovskite layer and a second carrier transport layer on the first carrier transport layer processed in Step 2; Step 4: Scratch the middle area of the cut isolation region to obtain a cutting groove P2. Isolation layers are respectively reserved on the left and right sides of the cutting groove P2, and the front electrode layer is exposed at the bottom; Step 5: Prepare a top electrode layer on the substrate film processed in Step 4; Step 6: Scratch the area where the cutting wire groove P2 is located to obtain a cutting wire groove P3, the bottom of which also exposes the front electrode layer. The width of the cutting wire groove P3 is smaller than that of the cutting wire groove P2. On one side of the cutting wire groove P3 close to the cutting wire groove P1, the preparation material of the top electrode layer is reserved, and on the other side, it is adjacent to the isolation layer.

4. A method for preparing an optoelectronic component, the internal structure of the optoelectronic component comprising a substrate, and sequentially including a front electrode layer, a first charge carrier transport layer, a perovskite layer, a second charge carrier transport layer, and a top electrode layer from bottom to top on the substrate, characterized in that, It includes the following steps: Step S1: Scratch the front electrode layer to obtain a first wire groove, and then prepare a first carrier transport layer; Use a mask plate to prepare an isolation area with a thickness not less than that of the perovskite layer at the position of the first wire groove and the third wire groove on one side. The width of the hollowed-out area of the mask plate is greater than the width of the third wire groove; Step S2: Use a mask plate opposite to the hollowed-out area in Step S1 to successively prepare a perovskite layer and a second carrier transport layer; Step S3: Scratch the middle area of the isolation area to obtain a second wire groove, and isolation layers are respectively reserved on the left and right sides of the second wire groove; Step S4: Prepare a top electrode layer on the film after the treatment in Step S3, scratch the area where the second wire groove is located to obtain a third wire groove. The width of the third wire groove is smaller than that of the second wire groove. On one side of the third wire groove, the preparation material of the top electrode layer is reserved, and on the other side, it is adjacent to the isolation layer.

5. A method for preparing an optoelectronic component, the internal structure of the optoelectronic component comprising a substrate, and sequentially comprising a front electrode layer, a first carrier transport layer, a perovskite layer, a second carrier transport layer, and a top electrode layer from bottom to top on the substrate, characterized in that, It includes the following steps: Step S5: First, prepare an isolation area on the front electrode layer. The thickness of the isolation area is not less than the sum of the thicknesses of the first carrier transport layer and the perovskite layer, and its width is greater than the width of the second wire groove; Prepare the first carrier transport layer in the area outside the isolation area; Scratch the first carrier transport layer and the front electrode layer simultaneously to obtain a first wire groove; Step S6: Successively prepare a perovskite layer and a second carrier transport layer on the first carrier transport layer; Step S8: Scratch the middle area of the isolation area to obtain a second wire groove, and isolation layers are respectively reserved on the left and right sides of the second wire groove; Step S9: Prepare a top electrode layer on the film after the treatment in Step S8, scratch the area where the second wire groove is located to obtain a third wire groove. The width of the third wire groove is smaller than that of the second wire groove. On one side of the third wire groove, the preparation material of the top electrode layer is reserved, and on the other side, it is adjacent to the isolation layer.

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