A silicon-based OLED probe testing device and testing method thereof

Abstract

The present invention discloses a silicon-based OLED probe testing device and a testing method thereof. The testing device includes an electrical cabinet and a test bench provided on the electrical cabinet. The test bench is provided with a probe bench and a horizontally movable gantry located above the probe bench. The probe bench is provided with two probes for piercing the peripheral PAD of a wafer to illuminate the entire screen. The lower portion of the gantry is provided with a detection camera and a spectrometer corresponding to the probe bench. Two probes are used to pierce the peripheral PAD to power the die to illuminate the entire wafer screen. Then, an area array camera or a TDI linear array camera is used to perform rapid imaging analysis of the entire wafer screen. No probe card is required, and rapid testing can be performed, reducing the Tact Time by 76.8% compared to traditional automatic probe bench testing of silicon-based OLEDs, thereby improving test efficiency and preventing damage to the bonding pad.

Description

Technical Field

[0001] The present invention relates to the technical field of silicon-based OLED testing, and in particular to a silicon-based OLED probe testing device and a testing method thereof. Background Art

[0002] In the semiconductor display industry, especially the silicon-based OLED industry, automatic probe station testing of photoelectric parameters is a very important step. The existing testing solution is to use a probe card to penetrate the wafer surface and then move the AOI and spectrometer to test the photoelectric parameters of the die. However, because the silicon-based OLED industry requires spectral testing and AOI test defects, the probes on the probe card cannot cover the die display area. As a result, the probe card can only light up a few dies at a time. After testing several dies, it moves to the next group of dies to continue testing. This wastes time in wafer movement and complicates testing operations. In addition, the probes may damage the bonding pads. The more probes on the probe card, the higher the cost and the greater the chance of damage. Summary of the Invention

[0003] In view of the shortcomings of the existing technology, the present invention provides a silicon-based OLED probe testing device and a testing method thereof, which does not require a probe card, can quickly complete the test, and improves the test efficiency.

[0004] In order to solve the above technical problems, the technical solution adopted by the present invention is:

[0005] A silicon-based OLED probe testing device includes an electrical cabinet and a test bench arranged on the electrical cabinet. The test bench is provided with a probe station and a gantry located above the probe station and movable horizontally. The probe station is provided with two probes for piercing the peripheral PAD of the wafer for full-screen lighting. The lower part of the gantry is provided with a detection camera and a spectrometer corresponding to the probe station.

[0006] The detection camera and spectrometer at the lower part of the gantry can be adjusted to rise and fall in the vertical direction.

[0007] The detection camera is a line array camera or an area array camera.

[0008] The detection camera and spectrometer are arranged side by side.

[0009] The probe is a movably arranged probe structure.

[0010] The gantry is a platform that can move along the X / Y direction.

[0011] The movement accuracy of the gantry is 0.8-1 μm.

[0012] The movement accuracy of the detection camera and spectrometer is 0.08-0.1 μm.

[0013] A testing method using the silicon-based OLED probe testing device comprises the following steps:

[0014] The wafer peripheral PAD is designed at the edge of the wafer, and the pin-piercing PAD on each die is integrated into the wafer peripheral PAD through routing;

[0015] The wafer is placed on the probe station of the test bench, and the two probes provided by the probe station are used to poke the peripheral PADs of the wafer to light up the entire screen;

[0016] After fully lighting up the rear array or line array camera and adjusting the Z-axis focus, the wafer is quickly imaged along the X / Y direction. After the camera quickly images, the spectrometer performs spectrum testing on each die.

[0017] After the spectrometer test is completed, the wafer performs the unload motion, and the computer system starts to process the test data and output the test report.

[0018] The pin-piercing PAD on each die is led to the two large PADs on the periphery through wiring to light up.

[0019] Compared with the prior art, the present invention has the following advantages:

[0020] The silicon-based OLED probe test device and its test method are rationally designed. Two probes are used to penetrate the peripheral PAD to power the die and light up the entire wafer screen. Then, an area array camera or a TDI line array camera is used to quickly image and analyze the entire wafer screen. No probe card is required, and the rapid test reduces the Tact Time by 76.8% compared to traditional automatic probe station testing of silicon-based OLEDs, improving test efficiency without damaging the bonding pad. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The following is a brief description of the contents and symbols in the drawings of this specification:

[0022] Figure 1 Schematic diagram of the device of the present invention.

[0023] Figure 2 Schematic diagram of the test bench of the present invention.

[0024] Figure 3 Schematic diagram of the wafer sheet of the present invention.

[0025] Figure 4 This is a schematic diagram of the integration of the Die unit acupuncture module of the present invention.

[0026] In the picture:

[0027] 1. Display screen interactive system, 2. Loading and unloading mechanism, 3. Mechanical part, 4. Test bench, 401. Gantry, 402. Spectrometer, 403. Wafer, 4031. Die unit, 403101. Needle puncture module, 4032. Peripheral module, 404. Inspection camera, 405. Probe, 5. Electrical cabinet. DETAILED DESCRIPTION

[0028] The specific implementation of the present invention will be further explained in detail below through description of embodiments with reference to the accompanying drawings.

[0029] like Figures 1 to 4 As shown, the silicon-based OLED probe testing device includes an electrical cabinet 5 and a test bench 4 arranged on the electrical cabinet. The test bench is provided with a probe station and a gantry 401 which is located above the probe station and can be moved horizontally. The gantry can be moved in both X and Y directions so that any position on the plane can be reached. The probe station is provided with two probes 405 for piercing the peripheral PAD of the wafer sheet 403 for full-screen lighting. The lower part of the gantry is provided with a detection camera 404 and a spectrometer 402 corresponding to the probe station.

[0030] The device may also include a display screen interaction system 1, a loading and unloading mechanism 2 and a mechanism part 3. The mechanism part is arranged side by side with the electrical cabinet 5. The display screen interaction system and the loading and unloading mechanism are both arranged on the mechanism part to improve the testing efficiency; the mechanism part 3 mainly includes a manipulator film transfer mechanism, a wafer alignment mechanism and a buffer zone.

[0031] Gantry 401 is a platform that can move in the X and Y directions; the gantry's movement accuracy is 0.8-1μm. The inspection camera and spectrometer at the bottom of the gantry are both adjustable in the vertical direction; the movement accuracy of the inspection camera and spectrometer is 0.08-0.1μm.

[0032] The probe is a movable probe structure. The detection camera and the spectrometer are arranged side by side, and the detection camera is a line array camera or a surface array camera.

[0033] The testing method using the silicon-based OLED probe testing device comprises the following steps:

[0034] The wafer peripheral PAD is designed at the edge of the wafer, and the needle module 403101PAD on each die unit (chip unit) 4031 is integrated into the wafer peripheral module 4032PAD through routing;

[0035] The wafer is placed on the probe station of the test bench, and the two probes provided by the probe station are used to poke the peripheral PADs of the wafer to light up the entire screen;

[0036] After fully lighting up the rear array or line array camera and adjusting the Z-axis focus, the wafer is quickly imaged along the X / Y direction. After the camera quickly images, the spectrometer performs spectrum testing on each die.

[0037] After the spectrometer test is completed, the wafer performs the unload motion, and the computer system starts to process the test data and output the test report.

[0038] Furthermore, the pin-puncture pad on each die is led to the two large pads on the periphery through wiring for lighting.

[0039] The present invention changes the product design and connects all the lit PADs of the die to the PADs outside the wafer through wiring. The probe station uses movable probes instead of probe cards, saving the cost of replacing probe cards. The wafer does not need to be moved, and the test is performed by the area array or TDI linear array AOI and spectrometer, which improves the test efficiency.

[0040] Preferred specific examples are:

[0041] First, to fully illuminate the silicon-based OLED screen, you only need to pierce the GND pad and COM pad. During the product design process, connect the GND pad and COM pad of each die to a single main pad outside the wafer display area. At this time, you only need to apply positive voltage to GND and negative voltage to COM to illuminate the entire wafer screen.

[0042] The automatic probe station comes with two probes 405, and the probes 405 are adjustable. At this time, the probes 405 are inserted into the GND and COMP PAD to apply positive and negative pressure respectively, and the wafer will light up in full screen.

[0043] If the test image is only W, then the calculation is:

[0044] The automatic probe station is integrated with a TDI linear array camera AOI 404 or an area array camera AOI 404 to image the wafer. The application of the TDI linear array camera AOI 404 or the area array camera AOI404 will greatly shorten the AOI inspection time. According to tests, the time for a TDI linear array camera with an 8K phase element size of 3.1μm to test an 8-inch wafer is about 63s; the time for an 8K area array camera with a phase element size of 3.1μm to test an 8-inch wafer is about 66s.

[0045] The automatic probe station is integrated with a spectrometer 402. The time for the spectrometer 402 to test one die is about 1 second, and the time to move to the next die is about 1.5 seconds. Therefore, the total test time of the spectrometer is 650 seconds (based on 260 dies on the wafer). Therefore, the Tact Time of the automatic probe station to test the W screen is about 12.3 minutes, which is 76.8% lower than the Tact Time of 53.1 minutes of the existing probe station to test the W screen, and there is no probe card cost.

[0046] The present invention uses two probes to penetrate the peripheral PAD to power the die and light up the entire wafer screen. Then, an area array camera or a TDI line array camera is used to quickly image and analyze the entire wafer screen. No probe card is required, and rapid testing can be performed, reducing the Tact Time by 76.8% compared to traditional automatic probe station testing of silicon-based OLEDs, thereby improving test efficiency and causing no damage to the bonding pad.

[0047] The above is only an illustration of a preferred embodiment of the present invention. The above technical features can be arbitrarily combined to form multiple embodiments of the present invention.

[0048] The present invention is described above by way of example in conjunction with the accompanying drawings. It is obvious that the specific implementation of the present invention is not limited to the above-mentioned method. As long as various non-substantial improvements are made using the concept and technical solution of the present invention, or the concept and technical solution of the present invention are directly applied to other occasions without improvement, they are all within the scope of protection of the present invention.

Claims

1. A testing method using a silicon-based OLED probe testing device, characterized in that: The silicon-based OLED probe testing device includes an electrical cabinet and a test bench arranged on the electrical cabinet, the test bench is provided with a probe bench and a horizontally movable gantry located above the probe bench, the probe bench is provided with two probes for piercing two large PADs on the periphery of the wafer for full-screen lighting, the lower part of the gantry is provided with a detection camera and a spectrometer corresponding to the probe bench; the detection camera and spectrometer at the lower part of the gantry are both adjustable in the vertical direction; the detection camera and spectrometer are arranged side by side; the probe is a movably arranged probe structure; the gantry is a table movable in the X / Y direction; The test method comprises the following steps: Two large PADs are designed on the edge of the wafer. The pin-piercing PAD on each die is connected to the two large PADs on the wafer through integrated traces. The wafer is placed on the probe station of the test bench, and the two probes provided by the probe station are used to poke the two large PADs outside the wafer to light up the entire screen; After fully lighting up the rear array or line array camera and adjusting the Z-axis focus, the wafer is quickly imaged along the X / Y direction. After the camera quickly images, the spectrometer performs spectrum testing on each die. After the spectrometer test is completed, the wafer performs loading motion, and the computer system begins to process the test data and output the test report.

2. The testing method according to claim 1, wherein: The detection camera is a line array camera or an area array camera.

3. The testing method according to claim 1, wherein: The movement accuracy of the gantry is 0.8-1 μm.

4. The testing method according to claim 2, wherein: The movement accuracy of the detection camera and spectrometer is 0.08-0.1 μm.

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