Drive circuit arrangement

Abstract

A drive circuit device is provided. A gate driver (100) includes: a driver substrate (102, 104) capable of being mounted to an IGBT module (130) of an external device as a drive target; a gate drive circuit (122, 124) formed on the driver substrate (102, 104) and configured to apply a drive signal generated using a power supply and a signal input from outside an input connector (110) to a semiconductor element (Q1, Q2) of the IGBT module (130); and an insulating member (120) configured to surround a peripheral edge of the input-side driver substrate (102).

Description

TECHNICAL FIELD

[0001] The present application relates to a drive circuit device that drives an external device having a semiconductor element. BACKGROUND

[0002] Generally, a drive circuit device is used, for example, for driving a module having a power semiconductor such as an IGBT (Insulated Gate-Bipolar Transistor). In a publication issued by the Japan Patent Office (JP 5477157 B2), a conventional example of a power semiconductor module is disclosed.

[0003] The conventional example of the power semiconductor module has the following structure. That is, a semiconductor chip and a pattern for wiring are mounted on an insulating substrate, the conductors including the pattern for wiring are electrically insulated from each other by a ceramic layer and an insulating layer, and the entire module is encapsulated by a peripheral housing to be insulated from the outside.

[0004] On the encapsulation surface of the power semiconductor module, the conductors of external terminals for gate drive and main circuit terminals corresponding to the collector and the emitter are largely exposed. Therefore, from the viewpoint of the relationship with a gate driver or the like used in combination with the power semiconductor module, the terminals of the module as elements on the output side need to be reliably insulated from the elements on the input side of the gate driver. SUMMARY

[0005] An object of the present application is to provide a drive circuit device capable of ensuring insulation from an external device.

[0006] To achieve the above object, the present application adopts the following structure. Note that the bracket annotations in the following description are only references, and the present application is not limited thereto.

[0007] [First Structure]

[0008] The drive circuit device of the first structure can be used in a state where the circuit substrate is mounted to an external device as a drive target, and the drive circuit device applies a drive signal generated by a drive circuit formed on the circuit substrate to the external device. The external device uses a power semiconductor element such as an IGBT to switch a relatively large current (for example, a power generation current), for example, and from the viewpoint of the relationship with the drive circuit device, the entire external device becomes the output side, and a part of the drive circuit device becomes the input side. Therefore, insulation between the input side part of the drive circuit device and the external device as the output side needs to be reliably performed.

[0009] Insulation is ensured by sufficiently separating a physical space distance (= insulation distance) between the input-side element and the output-side element. However, if the necessary space is to be obtained, it is necessary to mount the circuit board separately from the external device, or to arrange the terminal of the external device at a position remote from the mounting area of the circuit board, thus making the entire body large in terms of mounting area and mounting height.

[0010] The driving circuit device of the first structure is capable of sufficiently ensuring the insulation distance while reducing the physical space distance that should be ensured between the driving circuit device and the external device, by arranging the insulating surrounding member in a manner of surrounding the periphery of the circuit board. Thus, even in a state where the external device and the driving circuit device are combined, the entire body can be made small, and a space-saving and high-density arrangement can be achieved.

[0011] [Second Structure]

[0012] The driving circuit device of the second structure has a plurality of circuit boards. The plurality of circuit boards can be mounted to the external device as a driving target in a state where the circuit surfaces face each other. By having a plurality of circuit boards that form driving circuits, the driving circuit device can further reduce the mounting area of the entire body. The driving circuit device applies a driving signal generated by the driving circuit formed in the plurality of circuit boards to the external device. Among them, if an input-side circuit is formed on a particular circuit board, the other circuit boards become output-side as with the external device, and thus insulation is required therebetween. Therefore, in the second structure, the input-side circuit and the output-side are insulated by maintaining a space between the circuit surfaces, but for the circuit board on which the input-side circuit is formed, an insulating surrounding member is arranged in a manner of surrounding the periphery thereof. Thus, the insulation distance can be sufficiently ensured while reducing the physical space distance that should be ensured between the driving circuit device and the external device. Also similarly, in a state where the external device and the driving circuit device are combined, the entire body can be made small, and a space-saving and high-density arrangement can be achieved.

[0013] In the second structure, a partition member can be further arranged between the plurality of circuit boards. In this case, even if the circuit surfaces of the circuit board on which the input-side circuit is formed and the other circuit boards face each other, the physical space distance that should be ensured therebetween can be reduced, and thus the mounting height (size in the direction in which the circuit boards overlap) of the driving circuit device can be further suppressed.

[0014] Further, the surrounding member used in the second structure can be integrated with the partition member, and in this case, a structural simplification, molding, and assembly simplification can be achieved. BRIEF DESCRIPTION OF DRAWINGS

[0015] Figure 1A and Figure 1Bis a perspective view and a plan view showing the structure of a gate driver of one embodiment.

[0016] Figure 2 is an exploded perspective view of the gate driver.

[0017] Figure 3 is an exploded perspective view of the gate driver.

[0018] Figure 4 is a separate perspective view showing a mounting example of the gate driver.

[0019] Figure 5 is a circuit diagram showing the connection relationship of the gate driver and an IGBT module.

[0020] Figure 6 is a longitudinal sectional view (a sectional view along the V-V line of Figure 1B ).

[0021] Figure 7 is a plan view showing the state where the gate driver is mounted on the IGBT module.

[0022] Figure 8 is a plan view showing the connection mode of a plurality of IGBT modules.

[0023] Figure 9 is a diagram showing the circuit structure of a plurality of IGBT modules connected.

[0024] Figure 10A and Figure 10B is a perspective view and a side view showing the structure of a gate driver of a reference example.

[0025] Figure 11 is a plan view showing an example of a gate driver using another embodiment. DETAILED DESCRIPTION

[0026] Embodiments of a drive circuit device will be described below with reference to the drawings. In the following embodiments, a gate driver is exemplified as an example of a drive circuit device, and an IGBT module is exemplified as an example of an external device which is a drive target, but the embodiments are not limited to these examples, and the external device can be another power semiconductor module, and the gate driver can be a packaged type.

[0027] Figure 1A is a perspective view showing the structure of a gate driver 100 of one embodiment, Figure 1B is a plan view thereof. In addition, Figure 2 and Figure 3 is an exploded perspective view of the gate driver 100.

[0028] [Circuit Substrate]

[0029] The gate driver 100 has two driver substrates 102, 104 arranged separately in the Z-axis direction (up and down). Figure 2 3 The gate driver 100 has two driver substrates 102, 104 arranged separately in the Z-axis direction (up and down).

[0030] On one of the driver substrates 104 (arranged on the upper side in the drawing), in addition to a DC-DC converter 106, an input connector 110, and various chip components not shown, a wiring pattern not shown is formed. Figures 1A to 3 The input connector 110 is capable of connecting a wiring connected to an external direct-current power supply or a control unit, etc. not shown. The DC-DC converter 106 converts an external input direct-current power supply (for example, DC+12V) into a driving current for the gate drive circuit. Note that the external power supply can also be an alternating-current power supply, in which case an AC-DC converter, etc. can be mounted to the driver substrate 102.

[0031] The two driver substrates 102, 104 are joined via a plurality of lead pins 112, the arrangement of which serves as an electrical connection between the driver substrates 102, 104, and support pins 114, the arrangement of which structurally joins the two driver substrates 102, 104 to each other, maintaining the space between the two driver substrates 102, 104 and the arrangement of the lead pins 112.

[0032] On the two driver substrates 102, 104, the gate drive circuit not shown is formed as described above, and is formed in a plurality of systems according to the circuit structure (semiconductor bridge) of the module that is the object of driving. Note that the manner of driving the semiconductor by the gate drive circuit is described further below.

[0033] In addition, the gate driver 100 is provided with an insulating member 120 arranged so as to surround one of the driver substrates 104. The insulating member 120 is formed, for example, of an insulating resin, and has a shape like a housing that covers the lower surface of the one driver substrate 104 while surrounding the periphery thereof.

[0034] [Surrounding member]

[0035] More specifically, one of the driver substrates 104 is arranged in one direction (the Z-axis direction) with respect to the other driver substrate 104. Figure 2 3 ​​The two edges in pairs are straight in the X-axis direction, and in the other direction ( Figure 2 , 3 The two edges in the Y-axis direction are in a crank shape (bent shape). Therefore, the insulating member 120 has a pair of planar walls 122 and a pair of curved walls 124 having shapes that follow the edge shapes of the corresponding driver substrates 104. Such an insulating member 120 is configured to stand upright on the circuit surface of another driver substrate 102.

[0036] [Component Division]

[0037] Additionally, the insulating component 120 has a flat partition 126 in the region covering the lower surface of a driver substrate 104. The periphery of the partition 126 is connected to the inner wall surfaces of the planar wall 122 and the curved wall 124. Furthermore, openings 128 and 129 are formed at appropriate locations in the partition 126, and the aforementioned lead pins 112 and support pins 114 are inserted into the openings 128 and 129. It should be noted that although in Figure 2 as well as Figure 3 Not shown, but the lower surface of partition 126 is positioned slightly above the lower ends of planar wall 122 and curved wall 124, ensuring space between partition 126 and the upper circuit surface of another driver substrate 102.

[0038] In another driver substrate 102 (in Figure 1A as well as Figure 1B The circuit board (located below) houses a pair of output connectors 108 and various chip components (not shown). The output connectors 108 are positioned on the circuit surface outside the insulating member 120, i.e., at a location separated from a driver substrate 102 by the insulating member 120. Due to the edge of the driver substrate 102 and the crank shape of the bent wall 124, the mounting range of the output connectors 108 on the circuit surface does not interfere with the placement range of the insulating member 120. It should be noted that the purpose of the output connectors 108 will be further explained later.

[0039] like Figure 4 As shown, the gate driver 100 can drive semiconductor elements (IGBTs) when mounted on the IGBT module 130, which is the object to be driven. Various connection terminals 132, 134, and 136 are provided in the IGBT module 130. The gate driver 100 is mounted, for example, with the lower surface terminals (not shown) of the driver substrate 102 pressed onto the connection terminals 136. Furthermore, a busbar or other main conductor (+ and -) is connected to the connection terminal 132 on one side of the IGBT module 130 along its long side, and a conductor for an intermediate potential between semiconductor elements is connected to the connection terminal 134 on the other side.

[0040] In the IGBT module 130, a mounting region of the gate driver 100 is secured in advance, which is defined by a dimension L in a long side direction of the IGBT module 130 and a dimension W in a width direction, for example. Therefore, the gate driver 100 is configured to control the outer dimensions of the driver substrate 102 to a size within the mounting region (dimensions L, W).

[0041] [Circuit configuration]

[0042] Figure 5 is a circuit diagram showing the connection relationship of the gate driver 100 with the IGBT module 130. As described above, when the gate driver 100 is mounted to the IGBT module 130, it becomes a state of being electrically connected to the IGBT module 130 through the connection terminal 136.

[0043] The gate driver 100 has two systems of gate drive circuits 141, 142, corresponding to the semiconductor elements Q1, Q2 in the IGBT module 130, respectively, and applies a gate drive signal to the semiconductor elements Q1, Q2 from each of the gate drive circuits 141, 142 via resistors R1, R2, respectively. Note that, from the gate driver 100, the IGBT module 130 as a whole can be considered as an external device as a drive object, or only the portions of the semiconductor elements Q1, Q2 can be considered as an external device.

[0044] As described above, in each of the gate drive circuits 141, 142, in addition to inputting a signal for control from the outside through the input connector 110 (not shown in Figure 5 ), a direct-current power supply is input (supplied) from the outside to the DC-DC converter 106. The drive current is supplied from the DC-DC converter 106 to each of the gate drive circuits 141, 142, respectively.

[0045] [Input side circuit]

[0046] At this time, the input side (primary side) circuit in the gate driver 100 and the output side (secondary side) circuit are in an electrically insulated state, and the input connector 110, the unillustrated primary side circuit in the DC-DC converter 106, the unillustrated primary side circuit in each of the gate drive circuits 141, 142, and resistors, wiring patterns, connection terminals, and the like thereof are included in the input side circuit PI.

[0047] [Output side circuit]

[0048] If the above is taken as the input-side circuit PI, the entirety of the IGBT module 130 observed in the mounted state of the gate driver 100 becomes the output-side circuit PO, and at this time, the output-side circuit PO also includes, in addition to the input-side circuit PI, a not-shown secondary-side circuit within the DC-DC converter 106, not-shown secondary-side circuits within each of the gate drive circuits 141, 142, and resistors Rl, R2, wiring patterns, connection terminals, and the like thereof, which are insulated from the input-side circuit PI.

[0049] Therefore, a proper insulation distance Id needs to be ensured between the input-side circuit PI and the output-side circuit PO, but as described above, the gate driver 100 is a structure mounted on the package surface of the IGBT module 130, and in addition, the gate driver 100 itself also needs to be as compact as possible in terms of mounting height and mounting area, and therefore, there are various restrictions in terms of structure in order to ensure the insulation distance Id.

[0050] The above restrictions in terms of structure would force a person of ordinary skill in the art to ensure the insulation distance Id by providing a large spatial distance between the gate driver 100 and the IGBT module 130 or by increasing the mounting height of the gate driver 100 itself. However, the inventors and the like have succeeded in reducing the physical spatial distance between the input-side circuit PI and the output-side circuit PO by appropriately configuring the insulating member 120. Hereinafter, the ensuring of the insulation distance Id (reduction of the spatial distance) in the mounted state will be described.

[0051] Next, reference will be made to Figure 6 and Figure 7 In Figure 6 , the IGBT module 130, which is the mounting destination, is indicated by a double-dotted line.

[0052] [Insulation distance Idl]

[0053] As described above, the input-side circuit PI includes the input connector 110, the primary-side circuit of the DC-DC converter 106, the primary-side circuit within each of the gate drive circuits 141, 142 (not shown in Figure 5 , Figure 6 ), and the like, and these circuits are configured within the range indicated by a thick broken line in Figure 6 and Figure 7 . Note that the insulating member 135 is mounted on the driver substrate 104, and the insulation distance Idl (about 14 mm according to the requirements of the standards) within the driver substrate 104 is ensured by the size (standard size) of the insulating member 135 itself.

[0054] In the gate driver 100, since the input-side circuit PI is also included in the output-side circuit PO, the lower driver substrate 102 must be arranged so as to secure a sufficient insulation distance between the input-side circuit PI. Assuming that this is secured by providing a physical spatial distance, a distance equivalent to the insulation distance Idl shown is required, in which case the two driver substrates 102, 104 must be arranged more distantly apart than in the illustrated state. However, if such a large spatial distance is left open to arrange the two driver substrates 102, 104, other problems arise in which the mounting height of the entire gate driver 100 becomes extremely high. Figure 5

[0055] [Insulation distance Id2]

[0056] Therefore, in the present embodiment, by partitioning between the two driver substrates 102, 104 (within the space) using the insulating partition wall 126, it is possible to secure the necessary insulation distance Id2 while reducing the physical spatial distance (smaller than the insulation distance Idl). Specifically, by having the partition wall 126 present between the input-side circuit PI and the circuit surface of the driver substrate 102 to improve the insulation performance, it is possible to correspondingly reduce the physical spatial distance. As a result, it is possible to suppress the mounting height of the entire gate driver 100 to be low, which contributes to compactness.

[0057] On the other hand, in the relationship between the gate driver 100 and the IGBT module 130, the connection terminal 132 is located in the vicinity of the input-side circuit PI in the mounting state of the gate driver 100, and considering that a bus bar is also connected thereto, it is originally necessary to secure a corresponding spatial distance between the input-side circuit PI and the connection terminal 132 (bus bar in the connected state). In this case, if the gate driver 100 is to be mounted within the given mounting area, the driver substrate 104 must be arranged so as to be substantially more distantly apart in the height direction than in the illustrated state. However, if the driver substrate 104 is arranged to such a height, the problem still arises in which the mounting height of the entire gate driver 100 becomes extremely high. Note that since the substrate area is limited, it is difficult to arrange the input-side circuit PI near the center of the driver substrate 104, but if the input-side circuit PI is arranged on the opposite side, the problem arises this time in which it is not possible to maintain the insulation distance from the other connection terminals 134.

[0058] [Insulation distance Id3]

[0059] ​Therefore, in the present embodiment, by disposing the insulating member 120 at the periphery of the driver substrate 104 that loads the input-side circuit PI, and surrounding it with the flat wall 122 and the curved wall 124, it is possible to ensure a sufficient insulation distance Id3 between the input-side circuit PI and the output-side circuit PO within the IGBT module 130 while reducing the physical space distance (smaller than the insulation distance Idl).

[0060] That is, in the example of Figure 6 , the insulation performance is improved by the presence of the flat wall 122 between the input-side circuit PI and the connection terminal 132 (or the bus bar in the connected state) of the IGBT module 130, and therefore it is possible to correspondingly reduce the physical space distance and arrange them in the vicinity of each other. Thus, it is possible to suppress the mounting height of the gate driver 100 as a whole, and contribute to compactness.

[0061] In addition, in the example of Figure 7 , the periphery (three directions) of the input-side circuit PI is surrounded by the flat wall 122 and the curved wall 124. Therefore, it is possible to arrange the output connector 108 in the vicinity of the input-side circuit PI, and effectively utilize the limited mounting area of the driver substrate 102 to improve the mounting density.

[0062] [Parallel driving]

[0063] The gate driver 100 of the present embodiment can output (apply) a drive signal to the IGBT module 130 as a mounting destination to drive a semiconductor element, and can also output (apply) a drive signal to other IGBT modules 131, 133 other than the mounting destination in parallel, and drive a plurality of IGBT modules 130, 131, 133 in parallel. Hereinafter, parallel driving will be described.

[0064] [Connection method]

[0065] In Figure 8 , the connection method of a plurality of IGBT modules 130, 131, 133 is shown.

[0066] [Relay substrate]

[0067] First, the connection relationship of the IGBT module 130 and the other two IGBT modules 131 will be described. The two IGBT modules 131 are arranged on both sides of the IGBT module 130 in which the gate driver 100 is installed as the center. In addition, a relay substrate 150 is installed on each of the IGBT modules 131, and a wiring pattern for relaying is formed on the relay substrate 150 in addition to the relay connectors 107, 109 and a chip component (a resistor for driving) not shown, which are respectively installed. Note that relay terminals not shown are arranged on the relay connectors 107, 109, and a circuit (not shown) that applies a driving signal input from the relay terminals to the IGBT module 131 as a mounting destination is formed on the relay substrate 150.

[0068] [Parallel driving terminal]

[0069] The external output terminals (parallel driving terminals) that can output the driving signals from each of the gate driving circuits 141, 142 to the outside are arranged on the output connector 108 of the gate driver 100, and the output connector 108 and the relay connectors 107 of each of the relay substrates 150 are connected by the relay wiring 152, respectively, thereby forming a connection relationship between the gate driver 100 and each of the relay substrates 150. In this way, the IGBT module 130 and each of the IGBT modules 131 on both sides are connected.

[0070] In addition, in the present embodiment, it is also possible to further connect the other IGBT module 133, and in this case, it is possible to connect the other IGBT module 133 (second external device) to each of the IGBT modules 131 (first external device) connected on both sides of the IGBT module 130.

[0071] That is, with respect to each of the IGBT modules 131 on both sides of which the connection relationship is shown above, the other IGBT module 133 (in Figure 8 which a double-dotted line is shown in the middle) is arranged adjacent to each of the IGBT modules 131, respectively. At this time, the relay substrate 150 identical to the above is also installed on the other IGBT module 133, and each of the IGBT modules 131 on both sides and the IGBT module 133 adjacent thereto can be connected by the relay wiring 152. In the connection of the relay wiring 152, the relay connectors 107, 109 of the adjacent relay substrates 150 are used. For example, the relay wiring 152 (partially broken in the middle) that extends from the relay connector 109 of the relay substrate 150 installed in each of the IGBT modules 131 on both sides is connected to the relay connector 107 of the relay substrate 150 installed in the other IGBT module 133 adjacent thereto. Figure 8

[0072] [Parallel driving circuit] ​

[0073] In Figure 9 A circuit structure in which a plurality of IGBT modules 130, 131 (133) are connected is shown.

[0074] As described above, the IGBT module 130 in which the gate driver 100 of the present embodiment is installed is taken as the center, and one IGBT module 131 is connected on each side. At this time, by installing the relay substrate 150 in each IGBT module 131, the drive signal output from each gate drive circuit 141, 142 of the gate driver 100 can also be applied to the semiconductor elements Ql, Q2 in each of the IGBT modules 131 on the two sides.

[0075] [Parallel drive example 1]

[0076] Thus, the gate drive circuits 141, 142 of the gate driver 100 externally output the drive signal from the external output terminal of the output connector 108 to the relay terminal of the relay connector 107 through the relay wiring 152, and thereby can drive each semiconductor element Ql, Q2 of each of the IGBT modules 130 on the two sides in parallel with the central IGBT module 130.

[0077] [Parallel drive example 2]

[0078] In addition, if other IGBT modules 133 are arranged adjacent to each of the IGBT modules 131 on the two sides and connected through the relay wiring 152 described above, the drive signal externally output from the gate drive circuits 141, 142 can be applied in parallel to a plurality of IGBT modules 130, 131, 133. Thus, the gate drive circuits 141, 142 can drive each semiconductor element Ql, Q2 of each of the other IGBT modules 133 adjacent thereto in parallel in addition to the central IGBT module 130 and each of the IGBT modules 131 on the two sides. Note that the number of the connected IGBT modules 133 is not limited to one, and further other IGBT modules 133 can be connected in a string form (any number can be connected within a range in which the attenuation of the drive signal is above a threshold value).

[0079] [Insulation distance]

[0080] In addition, as Figure 9 shown, it is understood that in a state in which a plurality of IGBT modules 130, 131 (133) are connected, the other IGBT modules 131 (133) are included in the output side circuit PO, and in this case, the insulation distance Id between the input side circuit PI can also be sufficiently ensured.

[0081] [Reference example]

[0082] Here, the usefulness of the present embodiment is explained by comparison with a reference example. In Figure 10A A reference example is shown in FIGS. 1 to 3. Note that this reference example is not prior art. Figure 10B A reference example is shown in FIGS. 1 to 3. Note that this reference example is not prior art.

[0083] In the gate driver 10 of the reference example, the insulating member 120 used in the present embodiment is not provided. Therefore, it is known that the periphery of the driver substrate 104 is open, and further, the two driver substrates 102, 104 are not partitioned.

[0084] In the gate driver 10 of such a reference example, one driver substrate 104 including the input-side circuit PI is close to the other driver substrate 102 without maintaining a spatial distance of a standard level, and therefore the insulating distance Id2 is not sufficient, and does not satisfy the criteria (standard requirement) of an actual product. Similarly, in relation to the IGBT module 130 as a mounting destination, the insulating distance Id3 between the input-side circuit PI and the connection terminal 132 is also not sufficient.

[0085] Therefore, in order to make the insulating distances Id2, Id3 sufficient in the gate driver 10 of the reference example, as described above, it is necessary to configure one driver substrate 102 to move from the other driver substrate 104 to a height at which a spatial distance satisfying the design requirement is obtained, and in this case, the mounting height (volume) of the entire gate driver 10 becomes large.

[0086] In this regard, in the gate driver 100 of the present embodiment, the insulating distances Id2, Id3 are sufficiently ensured, and therefore it is extremely superior in terms of being able to suppress the mounting height to a minimum and achieve compactness of the entire.

[0087] According to the gate driver 100 of the present embodiment, the following advantages can be obtained.

[0088] (1) It is possible to shorten the physical spatial distance and suppress the mounting height (volume) while sufficiently ensuring the insulating distances Id2, Id3 between the input-side circuit PI and the output-side circuit PO.

[0089] (2) Further, when the mounting region is prescribed in the IGBT module 130 as a drive object (mounting destination), it is also possible to make the most of the limited mounting region and configure a circuit structure with sufficient performance.

[0090] (3) Since the size is such that the gate driver 100 does not protrude to the outside of the IGBT module 130 in plan view, it is also possible to reduce the arrangement interval of the IGBT modules 130, 131 to a minimum when a plurality of them are connected as shown in Figure 8 ​

[0091] (4) As the structure of the insulating member 120, there are the flat wall 122, the curved wall 124, and the partition wall 126, each having an inherent insulating function, and since the entire structure is integrally formed, ease of manufacture and assembly can be achieved, production costs can be suppressed, and production efficiency can be improved.

[0092] (5) In addition, the insulating member 120 is disposed only at a position where an insulating distance is required, and a method of packaging the entire structure including the driver substrate 104 and the mounting member thereof is not employed, and thus reduction in the material and weight used can be achieved, production costs can be suppressed, and production efficiency can be improved.

[0093] (6) Since the insulating member 120 and the driver substrate 104 do not interfere with the mounting range of the output connector 108 used at the time of connection of the plurality of IGBT modules 130, 131, the required mounting members can be efficiently accommodated in a limited substrate area, and in addition, an increase in mounting density can be achieved.

[0094] [Other Embodiments]

[0095] An example of a gate driver 200 using another embodiment is shown in Figure 11 . The gate driver 200 of the other embodiment differs from the gate driver 100 of the one embodiment in that the peripheral shape of one driver substrate 204 is different from that of the preceding driver substrate 104, and thus the shape of the insulating member 220 is also different.

[0096] That is, the driver substrate 204 has a deformed H shape in plan view, and the arrangement of the output connector 108 is in line with the connection direction (lateral direction) of the IGBT modules 130, 131. In addition, with respect to the relay substrate 154 mounted to one IGBT module 131 on each side, the arrangement of the relay connectors 107, 109 is in line with the connection direction of the IGBT modules 130, 131. Note that the IGBT module 133 is not shown in Figure 11 , but can be connected to the other IGBT module 133 as in Figure 8 .

[0097] In the example of the gate driver 200 using such another embodiment, the following advantage is also achieved: the relay wiring 154 can be suppressed to the minimum length between the connected IGBT modules 130, 131, and the weight and material cost can be further suppressed. The more the number of connected IGBT modules 130, 131 (133), the more effective this is.

[0098] Furthermore, in this embodiment, an example with two driver substrates 102 and 104 for gate drivers 100 and 200 has been described. However, there may be three or more driver substrates. In this case, spacers 126 may be disposed between each other (at two or more locations) on the opposite circuit surfaces of the driver substrates, or multiple spacers 126 may be integrally formed as insulating members 120. Alternatively, a structure with only one driver substrate may be used. In this case, a structure in which the periphery of a single driver substrate is surrounded by insulating members 120 may be used, and spacers covering its lower surface may not be provided.

[0099] The insulating component 120 is not limited to having a planar wall 122, a curved wall 124, or a partition wall 126. For example, it may also be composed of an annular peripheral wall and a disc-shaped partition wall. In addition, the thickness, material, and shape of each part of the insulating component 120 are not limited to those listed in the embodiments. As long as the spatial distance can be reduced and the necessary insulation distance can be ensured, it can be modified in various ways.

[0100] The arrangement of the output connector 108 can also be, for example, from Figure 11 In other embodiments, the positions are further downward and closer together, positioned on both sides of the input connector 110. In this case, the driver substrate 104 and the insulating member 120 can be T-shaped when viewed from above.

[0101] Additionally, the output connector 108 may not be located at... Figure 8 When viewed from above, the driver substrate 104 may be mounted on both sides of the driver substrate 102, or two may be arranged in a row and mounted on one side of the driver substrate 102, or only one may be mounted on one side of the driver substrate 104. Alternatively, the driver substrate 104 may be rectangular when viewed from above.

[0102] exist Figure 8 , Figure 11 The example illustrates a configuration where other IGBT modules 131, 133, etc., are connected to both sides of IGBT module 130, but it is also possible to connect them only to one side. Furthermore, the number of other IGBT modules 131, 133 connected is not limited to the number shown; the number can vary even when connected to both sides.

[0103] Furthermore, the structures listed in the embodiments and application examples along with the illustrations are merely preferred examples, and various elements may be added to the basic structure or a portion may be replaced.

Claims

1. A driving circuit device for driving semiconductor elements of an external device that is the object of driving, characterized in that, The drive circuit device includes: a plurality of circuit boards capable of being mounted to external devices as drive targets in a state in which mutually opposing circuit surfaces are kept apart from each other; a drive circuit formed throughout the plurality of circuit boards, in which an input-side circuit is formed in a first circuit board among the plurality of circuit boards, and an output-side circuit insulated from the input-side circuit is formed in a second circuit board, so that a drive signal generated using a power source and a signal externally input to the input-side circuit is applied to the output-side circuit in the external device connected to the output-side circuit of the second circuit board; an insulating surrounding member configured to surround a periphery of the first circuit board with a wall having a shape along a peripheral shape of the first circuit board, so as to secure an insulating distance between the input-side circuit and the output-side circuit in the external device. Further, the drive circuit device includes:

2. The drive circuit arrangement of claim 1, wherein an insulating partition member configured to partition the space between the circuit surfaces.

3. The drive circuit device according to claim 2, wherein the surrounding member and the partition member are integrated in a state in which a periphery of the partition member is connected to the surrounding member.

4. The drive circuit device according to any one of claims 1 to 3, wherein the drive circuit device further includes a parallel drive terminal configured to the circuit board, capable of externally outputting the drive signal in parallel to another external device configured separately from the external device as a mounting destination, in a state in which a relay board having a circuit that applies the drive signal input from a predetermined relay terminal to another external device is mounted to the other external device, the drive circuit is capable of driving the other external device in parallel using the drive signal externally output to the relay terminal from the parallel drive terminal through a wire.

5. The drive circuit device according to claim 4, wherein another relay terminal is configured to the relay board, the other relay terminal applies the drive signal input from the relay terminal to another external device as a mounting destination, and is capable of externally outputting the drive signal in parallel to another other external device, in a state in which a first external device and a second external device as the other external devices respectively have the relay board, the parallel drive terminal, and the relay terminal of the relay board mounted to the first external device connected through a wire, and respective relay terminals between the first external device and the second external device are connected through a wire, the drive circuit is capable of driving the first external device and the second external device in parallel using the drive signal externally output from the parallel drive terminal. ​

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