Filter and Radio Frequency Communication Device

Abstract

The filter and radio frequency communication device provided by this application relate to the field of wireless communication technologies. In this application, the filter includes: an inductance structure, which includes at least one inductance element; a capacitance structure, which includes at least one integrated capacitor chip; an acoustic wave resonance structure, which includes at least one integrated acoustic wave resonance chip; and a substrate structure, which is encapsulated together with the inductance structure, the capacitance structure, and the acoustic wave resonance structure, and at least part of the structure included in the inductance structure is located inside the substrate structure. Among them, at least one inductance element, at least one integrated capacitor chip, and at least one integrated acoustic wave resonance chip are electrically connected to form a filter circuit. Through the above arrangement, the problem of the large size of the filter structure due to the low integration degree in the existing device integration technology can be improved.

Description

Technical Field

[0001] This application relates to the field of wireless communication technologies, and more particularly, to a filter and a radio frequency communication device. Background Art

[0002] In the field of wireless communication technologies, the performance of radio frequency communication devices directly affects the quality of wireless communication. Among them, in radio frequency communication devices, in order to effectively process the received signals and the signals to be transmitted, corresponding filtering structures need to be provided.

[0003] It has been found by the inventors that in the existing filtering structures, due to the low integration degree of the filtering structures, there is a problem of large size of the filtering structures, which limits their application scope. Summary of the Invention

[0004] In view of this, the purpose of this application is to provide a filter and a radio frequency communication device to improve the problem of large size of the filtering structure due to low integration degree in the existing device integration technology, thereby broadening the application scope of the filtering structure.

[0005] To achieve the above purpose, the embodiments of this application adopt the following technical solutions:

[0006] A filter, comprising:

[0007] An inductance structure, which includes at least one inductance element;

[0008] A capacitance structure, which includes at least one integrated capacitance chip;

[0009] An acoustic wave resonance structure, which includes at least one integrated acoustic wave resonance chip;

[0010] A substrate structure, which is encapsulated together with the inductance structure, the capacitance structure and the acoustic wave resonance structure, and at least part of the structure included in the inductance structure is located inside the substrate structure;

[0011] Wherein, the at least one inductance element, the at least one integrated capacitance chip and the at least one integrated acoustic wave resonance chip are electrically connected to form a filtering circuit.

[0012] In a preferred selection of the embodiments of this application, in the above filter, each of the integrated capacitance chips includes:

[0013] A first substrate;

[0014] At least one capacitive element integrated on the first substrate, each of the capacitive elements including a first conductive layer, a first dielectric layer, and a second conductive layer, the first conductive layer being located on one side of the first substrate, the first dielectric layer being located on the side of the first conductive layer away from the first substrate, and the second conductive layer being located on the side of the first dielectric layer away from the first conductive layer.

[0015] In a preferred selection of the embodiments of the present application, in the above filter, at least part of the chip structure included in at least one of the integrated capacitor chips is located inside the substrate structure.

[0016] In a preferred selection of the embodiments of the present application, in the above filter, the capacitive structure further includes at least one plate capacitor, and each of the plate capacitors includes:

[0017] Two conductive layers arranged at intervals;

[0018] A second dielectric layer located between the two conductive layers;

[0019] Wherein, at least part of the layered structure included in the conductive layer and the second dielectric layer is located inside the substrate structure.

[0020] In a preferred selection of the embodiments of the present application, in the above filter, each of the integrated acoustic resonator chips includes:

[0021] A second substrate;

[0022] At least one acoustic resonator integrated on the second substrate.

[0023] In a preferred selection of the embodiments of the present application, in the above filter, at least part of the chip structure included in at least one of the integrated acoustic resonator chips is located inside the substrate structure.

[0024] In a preferred selection of the embodiments of the present application, in the above filter, each of the integrated capacitor chips includes a first substrate and at least one capacitive element integrated on the first substrate;

[0025] Wherein, the first substrate of at least one of the integrated capacitor chips and the second substrate of at least one of the integrated acoustic resonator chips belong to different regions of the same substrate, so that the at least one integrated capacitor chip and the at least one integrated acoustic resonator chip belong to the same integrated chip.

[0026] In a preferred selection of the embodiments of the present application, in the above filter, the inductive structure includes at least one spiral inductor;

[0027] Wherein, each of the spiral inductors is at least partially located inside the substrate structure.

[0028] In a preferred selection of the embodiments of the present application, in the above-mentioned filter, the inductance structure includes at least one planar inductor;

[0029] Wherein, each of the planar inductors is at least partially located inside the substrate structure.

[0030] On this basis, the embodiments of the present application further provide a radio frequency communication device, including:

[0031] A first filtering device for processing the received radio frequency signal;

[0032] A second filtering device for processing the radio frequency signal to be transmitted;

[0033] Wherein, among the first filtering device and the second filtering device, at least one filter is the above-mentioned filter.

[0034] The filter and the radio frequency communication device provided by the present application, on the basis of encapsulating the substrate structure, the inductance structure, the capacitance structure and the acoustic wave resonance structure into one body, arrange at least part of the structure included in the inductance structure inside the substrate structure, thereby improving the integration degree of the formed filter, enabling the size of the filter to be effectively reduced. In this way, the problem of the large size of the filtering structure due to the low integration degree in the existing device integration technology can be improved, and further, the application range of the filtering structure can be broadened. For example, the smaller the volume, the easier it is to be arranged in various application environments, making it highly practical and capable of being widely applied.

[0035] To make the above-mentioned objects, features and advantages of the present application more obvious and understandable, the following specifically gives preferred embodiments and, in conjunction with the accompanying drawings, makes a detailed description as follows. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] Figure 1 It is a structural block diagram of the radio frequency communication device provided by the embodiments of the present application.

[0037] Figure 2 It is a circuit schematic diagram of the radio frequency communication device provided by the embodiments of the present application.

[0038] Figure 3 It is a structural schematic diagram of the filter provided by the embodiments of the present application.

[0039] Figure 4 It is a schematic diagram of the positional relationship between the spiral inductor and the substrate structure provided by the embodiments of the present application.

[0040] Figure 5 It is a structural schematic diagram of the integrated capacitor chip provided by the embodiments of the present application.

[0041] Figure 6Schematic diagram of the structure of the plate capacitor provided by the embodiment of the present application.

[0042] Figure 7 Schematic diagram of the structure of the integrated acoustic wave resonator chip provided by the embodiment of the present application.

[0043] Figure 8 Schematic diagram of the structure of the first filter provided by the embodiment of the present application.

[0044] Figure 9 Schematic diagram of the structure of the second filter provided by the embodiment of the present application.

[0045] Figure 10 Schematic diagram of the structure of the third filter provided by the embodiment of the present application.

[0046] Figure 11 Schematic diagram of the structure of the fourth filter provided by the embodiment of the present application.

[0047] Figure 12 Schematic diagram of a positional relationship of arranging components inside a substrate structure provided by the embodiment of the present application.

[0048] Icon: 10 - Radio frequency communication device; 12 - First filtering device; 14 - Second filtering device; 100 - Filter; 110 - Inductance structure; 120 - Capacitance structure; 130 - Acoustic wave resonance structure; 140 - Substrate structure. Detailed implementation manners

[0049] To make the objectives, technical solutions, and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Apparently, the described embodiments are only some of the embodiments of the present application, rather than all of the embodiments. Usually, the components of the embodiments of the present application described and illustrated herein can be arranged and designed in various different configurations.

[0050] Therefore, the detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application claimed, but merely represents selected embodiments of the present application. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present application without creative efforts shall fall within the protection scope of the present application.

[0051] As Figure 1 shown, the embodiment of the present application provides a radio frequency communication device 10. Among them, the radio frequency communication device 10 may include a first filtering device 12 and a second filtering device 14.

[0052] Specifically, the first filtering device 12 can be used to process the radio frequency signals received by the radio frequency communication device 10, and the second filtering device 14 can be used to process the radio frequency signals to be transmitted by the radio frequency communication device 10.

[0053] Optionally, the specific settings of the first filtering device 12 and the second filtering device 14 are not limited and can be selected according to actual application requirements.

[0054] For example, in an alternative example, in combination with Figure 2 , in order to achieve efficient processing of radio frequency signals, the first filtering device 12 and the second filtering device 14 can be multiple respectively to form multiple filter banks (one filter bank can also be called a duplexer). Among them, each filter bank can include a first filtering device 12 and a second filtering device 14 to form a filtering channel (including transmission and reception) for a radio frequency signal.

[0055] It should be noted that in order to achieve effective reception and transmission of radio frequency signals, the radio frequency communication device 10 may further include an antenna, a radio frequency switch, a power amplifier, etc. Thus, the radio frequency switch can be respectively connected to the antenna, the first filtering device 12 and the second filtering device 14, and the first filtering device 12 and the second filtering device 14 can also be connected to the power amplifier (the specific connection relationship is not specifically limited in this embodiment).

[0056] Thus, for the received radio frequency signal, the radio frequency signal can sequentially pass through the antenna, the radio frequency switch, the first filtering device 12 and the power amplifier. For the radio frequency signal to be transmitted, the radio frequency signal can sequentially pass through the power amplifier, the second filtering device 14, the radio frequency switch and the antenna.

[0057] In combination with Figure 3 , the embodiment of the present application further provides a filter 100 that can be applied to the above-mentioned radio frequency communication device 10. That is to say, among the first filtering device 12 and the second filtering device 14 included in the radio frequency communication device 10, at least one of the filtering devices can be the filter 100.

[0058] For example, in an alternative example, the above-mentioned first filtering device 12 can be the filter 100. Again, for example, in another alternative example, the above-mentioned second filtering device 14 can be the filter 100. Still, for example, in another alternative example, both the above-mentioned first filtering device 12 and the second filtering device 14 can be the filter 100.

[0059] Among them, the filter 100 may include an inductance structure 110, a capacitance structure 120, an acoustic wave resonator structure 130, and a substrate structure 140. Moreover, the inductance structure 110 may include at least one inductance element. The capacitance structure 120 may include at least one capacitance element. The acoustic wave resonator structure 130 may include at least one acoustic wave resonator. The substrate structure 140 may be encapsulated together with the inductance structure 110, the capacitance structure 120, and the acoustic wave resonator structure 130.

[0060] Specifically, at least part of the structure included in the inductance structure 110 may be located inside the substrate structure 140. The at least one inductance element, the at least one capacitance element, and the at least one acoustic wave resonator may be electrically connected to form a filter circuit.

[0061] Based on this, on the basis of encapsulating the substrate structure 140 together with the inductance structure 110, the capacitance structure 120, and the acoustic wave resonator structure 130, at least part of the structure included in the inductance structure 110 is arranged inside the substrate structure 140, thereby improving the integration degree of the formed filter 100, enabling the size of the filter 100 to be effectively reduced, and improving the problem that the size of the filter structure is large due to the low integration degree in the existing device integration technology.

[0062] In a first aspect, regarding the inductance structure 110, it should be noted that the specific number of inductance elements included in the inductance structure 110 is not limited and can be selected according to actual application requirements.

[0063] For example, in an alternative example, the inductance structure 110 may include one inductance element. Again, for example, in another alternative example, the inductance structure 110 may include multiple inductance elements (the connection relationship between the multiple inductance elements is not specifically limited and can be selected according to actual application requirements, such as series connection, parallel connection, or they may not be directly connected, such as being connected to other elements, etc.).

[0064] Among them, the specific type of the inductance element included in the inductance structure 110 is also not limited and can be selected according to actual application requirements.

[0065] For example, in an alternative example, the inductance element included in the inductance structure 110 may be a spiral inductance. That is to say, the inductance element may be formed by a wire in a spiral shape (such as a metal wire).

[0066] Again, for example, in another alternative example, the inductance element included in the inductance structure 110 may be a planar inductance. That is to say, the inductance element may be formed by a conductive layer in a planar shape (such as a metal conductive layer).

[0067] For another alternative example, among the multiple inductance elements included in the inductance structure 110, some of the inductance elements can be spiral inductors, and some of the inductance elements can be planar inductors. Specifically, the quantity can be selected according to actual application requirements.

[0068] Moreover, the relative positional relationship between the inductance elements included in the inductance structure 110 and the substrate structure 140 is not limited either, and can also be selected according to actual application requirements.

[0069] For example, in an alternative example, when the inductance structure 110 includes at least one spiral inductor, it can be that at least part (i.e., all or part) of each of the spiral inductors is located inside the substrate structure 140 (as Figure 4 shown. In this way, the occupied space of the inductance structure 110 can be fully reduced, making the integrated size of the filter 100 smaller), or it can be that at least part of at least one spiral inductor is located inside the substrate structure 140.

[0070] For another example, in another alternative example, when the inductance structure 110 includes at least one planar inductor, it can be that at least part of each of the planar inductors is located inside the substrate structure 140 (in this way, the occupied space of the inductance structure 110 can be fully reduced, making the integrated size of the filter 100 smaller), or it can be that at least part of at least one planar inductor is located inside the substrate structure 140.

[0071] Among them, in a specific application example, when the inductance structure 110 includes at least one planar inductor, in order to fully reduce the integrated size of the filter 100, all of each of the planar inductors can be located inside the substrate structure 140.

[0072] Second, regarding the capacitance structure 120, it should be noted that the specific quantity of the capacitance elements included in the capacitance structure 120 is not limited and can be selected according to actual application requirements.

[0073] For example, in an alternative example, the capacitance structure 120 can include one capacitance element. For another example, in another alternative example, the capacitance structure 120 can include multiple capacitance elements (the connection relationship between the multiple capacitance elements is not specifically limited and can be selected according to actual application requirements, such as series connection, parallel connection, or they may not be directly connected, such as being connected to other elements, etc.).

[0074] Among them, the specific type of the capacitive elements included in the capacitive structure 120 is not limited either, and can also be selected according to actual application requirements.

[0075] For example, in an alternative example, the capacitive elements included in the capacitive structure 120 can be integrated capacitors (in this way, the integration degree of the formed filter 100 can be further improved, and the size of the device can be reduced). That is, in combination Figure 5 , the capacitive structure 120 can include an integrated capacitor chip (that is, the at least one inductive element, the at least one integrated capacitor chip, and the at least one acoustic resonator can be electrically connected to form a filter circuit). The integrated capacitor chip can include a first substrate and at least one capacitive element integrated on the first substrate.

[0076] Among them, the material of the first substrate is not limited. For example, it can include, but is not limited to, silicon, glass, quartz, sapphire, lithium niobate, or lithium tantalate, etc.

[0077] Moreover, the specific integration structure of the at least one capacitive element integrated on the first substrate is not limited either. For example, each capacitive element can include a first conductive layer, a first dielectric layer, and a second conductive layer. The first conductive layer can be located on one side of the first substrate, the first dielectric layer can be located on the side of the first conductive layer away from the first substrate, and the second conductive layer can be located on the side of the first dielectric layer away from the first conductive layer.

[0078] Again, for example, in another alternative example, in combination Figure 6 , the capacitive elements included in the capacitive structure 120 can be plate capacitors. That is, the capacitive elements can include a conductive layer and a second dielectric layer to form a plate capacitor.

[0079] Specifically, the conductive layer can be two layers, and the two conductive layers can be arranged at intervals. The second dielectric layer can be located between the two conductive layers. In this way, the plate capacitor can be formed by the two conductive layers and the second dielectric layer.

[0080] Optionally, in the above two examples, the specific composition of the conductive layer and the dielectric layer is not limited and can be selected according to actual application requirements, as long as the conductive layer can conduct electricity and the dielectric layer has a relatively appropriate dielectric constant.

[0081] For example, in an alternative example, the conductive layer can be a metal conductive layer, and the dielectric layer can be an inorganic material layer.

[0082] Moreover, the relative positional relationship between the capacitive elements included in the capacitive structure 120 and the substrate structure 140 is not limited either, and can also be selected according to actual application requirements.

[0083] For example, in an alternative example, when the capacitor structure 120 includes at least one integrated capacitor chip, it can be that at least part of the chip structure included in each integrated capacitor chip is located inside the substrate structure 140 (in this way, the integrated size of the filter 100 can be made smaller), or it can be that each integrated capacitor chip is located in the external region of the substrate structure 140.

[0084] For another example, in another alternative example, when the capacitor structure 120 includes at least one plate capacitor, it can be that at least part of the layered structure included in each plate capacitor is located inside the substrate structure 140 (in this way, the integrated size of the filter 100 can be made smaller).

[0085] Among them, in a specific application example, in order to fully reduce the integrated size of the filter 100, the capacitor elements included in the capacitor structure 120 can all be integrated capacitor chips, and all the chip structures of the integrated capacitor chips are located inside the substrate structure 140.

[0086] In the third aspect, regarding the acoustic wave resonator structure 130, it should be noted that the specific number of acoustic wave resonators included in the acoustic wave resonator structure 130 is not limited and can be selected according to actual application requirements.

[0087] For example, in an alternative example, the acoustic wave resonator structure 130 can include one acoustic wave resonator. For another example, in another alternative example, the acoustic wave resonator structure 130 can include multiple acoustic wave resonators (the connection relationship between the multiple acoustic wave resonators is not specifically limited and can be selected according to actual application requirements, such as series connection, parallel connection, or they may not be directly connected, such as being connected to other components, etc.).

[0088] Among them, the specific type of the acoustic wave resonators included in the acoustic wave resonator structure 130 is also not limited and can be selected according to actual application requirements.

[0089] For example, in an alternative example, the acoustic wave resonator can be a surface acoustic wave resonator (SAW). For another example, in another alternative example, the acoustic wave resonator can also be a solidly mounted resonator (SMR). For yet another example, in another alternative example, the acoustic wave resonator can also be a film bulk acoustic resonator (FBAR).

[0090] Among them, in order to further improve the integration degree of the formed filter 100, at least one acoustic resonator included in the acoustic wave resonance structure 130 may exist in the form of an integrated chip. That is to say, the acoustic wave resonance structure 130 may include at least one integrated acoustic wave resonance chip.

[0091] Specifically, in combination with Figure 7 , each of the integrated acoustic wave resonance chips may include a second substrate and at least one acoustic resonator. Among them, each of the acoustic resonators may be integrated (arranged) on the second substrate to form the integrated acoustic wave resonance chip.

[0092] Moreover, the relative positional relationship between the acoustic resonators included in the acoustic wave resonance structure 130 and the substrate structure 140 is not limited either, and can also be selected according to actual application requirements.

[0093] For example, in an alternative example, when the acoustic wave resonance structure 130 includes at least one integrated acoustic wave resonance chip, at least part of the chip structure included in each of the integrated acoustic wave resonance chips may be located inside the substrate structure 140.

[0094] Also, for example, in another alternative example, when the acoustic wave resonance structure 130 includes at least one integrated acoustic wave resonance chip, each of the integrated acoustic wave resonance chips may be located in the external region of the substrate structure 140.

[0095] Furthermore, for example, in another alternative example, when the acoustic wave resonance structure 130 includes multiple integrated acoustic wave resonance chips, it may be that at least part of the chip structure included in some of the integrated acoustic wave resonance chips is located inside the substrate structure 140, and another part of the integrated acoustic wave resonance chips is located in the external region of the substrate structure 140.

[0096] Among them, in a specific application example, when the acoustic wave resonance structure 130 includes at least one integrated acoustic wave resonance chip and the capacitor structure 120 includes at least one integrated capacitor chip, the second substrate included in at least one integrated acoustic wave resonance chip and the first substrate included in at least one integrated capacitor chip respectively belong to different regions of the same substrate, so that the acoustic resonator included in the integrated acoustic wave resonance chip and the capacitor element included in the integrated capacitor chip are integrated on the same substrate, and the at least one integrated capacitor chip and the at least one integrated acoustic wave resonance chip belong to the same integrated chip. In this way, the integration degree of the formed filter 100 can be further improved, and the size of the device can be made smaller.

[0097] Moreover, for an integrated chip including a capacitive element and a SAW resonator, the integrated chip can be partially or entirely located inside the substrate structure 140, or can be located outside the substrate structure 140, which can be selected according to specific integration processes and integration size requirements. For example, when a smaller size is required, the integrated chip can be entirely disposed inside the substrate structure 140.

[0098] Fourthly, regarding the substrate structure 140, it should be noted that the specific material of the substrate structure 140 is not limited and can be selected according to actual application requirements.

[0099] For example, in an alternative example, the material of the substrate structure 140 can include, but is not limited to, organic materials, ceramic materials, etc.

[0100] It should also be noted that for the substrate structure 140, in order to achieve electrical connections between different components (such as electrical connections between a capacitive element and a SAW resonator, electrical connections between a capacitive element and an inductive element, electrical connections between an inductive element and a SAW element, electrical connections between inductive elements), at least one conductive connection layer (such as a metal layer) can also be provided inside or on the surface of the substrate structure 140 for connecting to the components that need to be electrically connected respectively.

[0101] Among them, when it is necessary to achieve electrical connection between components disposed inside the substrate structure 140 and components disposed in the external area of the substrate structure 140, between the substrate structure 140 and the components disposed in the external area of the substrate structure 140, conductive structures such as solder balls and copper pillars can also be provided to electrically connect the substrate structure 140 and the components, or electrical connection can also be achieved by means of metal bonding.

[0102] Moreover, considering that among the components disposed inside the substrate structure 140, some components may be completely encapsulated inside the substrate structure 140. Thus, in order to achieve electrical connection between these components or electrical connection between these components and components disposed in the external area of the substrate structure 140, the substrate structure 140 can also be provided with vias, and conductive connection structures (such as metal wires or metal pillars, etc.) are provided in the vias to electrically connect different components.

[0103] Furthermore, in order to achieve electrical connection between the filter 100 and other devices (such as the power amplifier and RF switch included in the applied RF communication device 10), a conductive interface is also provided on the substrate structure 140, and the conductive interface can be electrically connected to each component included in the filter 100. Thus, after the conductive interface is electrically connected to other devices, the purpose of connecting each component included in the filter 100 to other devices can be achieved, thereby realizing input and output of RF signals.

[0104] Furthermore, for a better illustration of the filter 100 provided in the embodiments of the present application, the embodiments of the present application also provide specific application examples of the filter 100, which are specifically as follows.

[0105] Combined with Figure 8 , in the first application example, the filter 100 may include a substrate, a spiral inductor, an integrated capacitor chip, and an integrated acoustic resonator chip. Among them, the spiral inductor may be disposed inside the substrate, and the integrated capacitor chip and the integrated acoustic resonator chip may be disposed in the external region of the substrate (on the first side of the substrate). The integrated capacitor chip and the integrated acoustic resonator chip may be respectively connected to the spiral inductor through solder balls and / or other conductive materials (such as copper pillars), and the other conductive materials may penetrate the substrate to extend to the second side of the substrate (the other side opposite to the first side), thereby forming the external electrical connection interface of the filter 100.

[0106] Combined with Figure 9 , in the second application example, the filter 100 may include a substrate, a spiral inductor, and an integrated chip, and the integrated chip integrates a capacitor element and an acoustic resonator. Among them, the spiral inductor may be disposed inside the substrate, and the integrated chip may be disposed in the external region of the substrate (on the first side of the substrate). The integrated chip may be connected to the spiral inductor through solder balls and / or other conductive materials (such as copper pillars), and the other conductive materials may penetrate the substrate to extend to the second side of the substrate (the other side opposite to the first side), thereby forming the external electrical connection interface of the filter 100.

[0107] Combined with Figure 10 , in the third application example, the filter 100 may include a substrate, a spiral inductor, a plate capacitor, and an integrated acoustic resonator chip. Among them, the spiral inductor and the plate capacitor may be disposed inside the substrate, and the integrated acoustic resonator chip may be disposed in the external region of the substrate (on the first side of the substrate). The integrated acoustic resonator chip may be respectively connected to the spiral inductor and the plate capacitor through solder balls and / or other conductive materials (such as copper pillars), and the other conductive materials may penetrate the substrate and extend to the second side of the substrate (the other side opposite to the first side), thereby forming the external electrical connection interface of the filter 100.

[0108] Combined with Figure 11, in the fourth application example, the filter 100 may include a substrate, a spiral inductor, an integrated capacitor chip, and an integrated acoustic wave resonator chip. Among them, the spiral inductor, the integrated capacitor chip, and the integrated acoustic wave resonator chip may be disposed inside the substrate. The integrated capacitor chip and the integrated acoustic wave resonator chip may be respectively connected to the spiral inductor through solder balls / or other conductive materials (such as copper pillars), and the other conductive materials may extend to the external area of the substrate, thereby forming an external electrical connection interface of the filter 100.

[0109] It can be understood that in the previous description, "a plurality of" may mean two or more. For example, "a plurality of inductive elements" means two or more inductive elements.

[0110] Moreover, in the previous description, the statement that "all of the devices (such as an integrated capacitor chip or an integrated acoustic wave resonator chip) or inductive elements are located inside the substrate structure 140" should not be understood as meaning that there must be a sealed accommodation space inside the substrate structure 140, and the devices or elements are disposed in this accommodation space. Instead, it should be understood that the devices or elements can either be disposed in the sealed accommodation space inside the substrate structure 140, or partially on the outer surface or completely located between the two opposite outer surfaces of the substrate structure 140, but can be in contact with the external space of the substrate structure 140 (such as Figure 12 as shown, the inductive structure 110 is completely located between the two opposite outer surfaces of the substrate structure 140, but is in contact with the external space of the substrate structure 140, or part of its surface is exposed in the external space of the substrate structure 140).

[0111] In summary, for the filter 100 and the radio frequency communication device 10 provided in this application, on the basis of encapsulating the substrate structure 140, the inductive structure 110, the capacitive structure 120, and the acoustic wave resonant structure 130 into one body, at least part of the structure included in the inductive structure 110 is disposed inside the substrate structure 140, thereby improving the integration degree of the formed filter 100, enabling the size of the filter 100 to be effectively reduced. In this way, the problem of the large size of the filtering structure existing in the existing device integration technology due to the low integration degree can be improved, and further, the application range of the filtering structure can be broadened.

[0112] The above are only the preferred embodiments of this application and are not used to limit this application. For those skilled in the art, this application can have various changes and modifications. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of this application shall be included within the protection scope of this application.

Claims

1. A filter, characterized in that, Comprising: An inductance structure, which includes at least one inductance element; A capacitance structure, which includes at least one integrated capacitance chip; An acoustic wave resonance structure, which includes at least one integrated acoustic wave resonance chip; A substrate structure, which is encapsulated together with the inductance structure, the capacitance structure and the acoustic wave resonance structure, and at least part of the structure included in the inductance structure is located inside the substrate structure; Wherein, the at least one inductance element, the at least one integrated capacitance chip and the at least one integrated acoustic wave resonance chip are electrically connected to form a filtering circuit; Each of the at least one integrated acoustic wave resonance chip includes: A second substrate; At least one acoustic wave resonator integrated on the second substrate; Each of the at least one integrated capacitance chip includes a first substrate and at least one capacitance element integrated on the first substrate; Wherein, the first substrates of at least one of the at least one integrated capacitance chip and the second substrates of at least one of the at least one integrated acoustic wave resonance chip belong to different regions of the same substrate, so that the at least one integrated capacitance chip and the at least one integrated acoustic wave resonance chip belong to the same integrated chip.

2. The filter according to claim 1, wherein Each of the at least one integrated capacitance chip includes: A first substrate; At least one capacitance element integrated on the first substrate, and each capacitance element includes a first conductive layer, a first dielectric layer and a second conductive layer. The first conductive layer is located on one side of the first substrate, the first dielectric layer is located on the side of the first conductive layer away from the first substrate, and the second conductive layer is located on the side of the first dielectric layer away from the first conductive layer.

3. The filter according to claim 2, characterized in that At least part of the chip structure included in at least one of the at least one integrated capacitance chip is located inside the substrate structure.

4. The filter according to claim 1, wherein The capacitance structure further includes at least one plate capacitor, and each of the at least one plate capacitor includes: Two conductive layers arranged at intervals; A second dielectric layer located between the two conductive layers; Wherein, at least part of the layered structure included in the conductive layer and the second dielectric layer is located inside the substrate structure.

5. The filter according to claim 1, characterized in that At least part of the chip structure included in at least one of the at least one integrated acoustic wave resonance chip is located inside the substrate structure.

6. The filter according to any one of claims 1-4, characterized in that The inductance structure includes at least one spiral inductor; Wherein, at least part of each spiral inductor is located inside the substrate structure.

7. The filter according to any one of claims 1-4, characterized in that, The inductance structure includes at least one planar inductor; Wherein, at least part of each planar inductor is located inside the substrate structure.

8. A radio frequency communication device, characterized in that, Comprising: A first filtering device for processing the received radio frequency signal; A second filtering device for processing the radio frequency signal to be transmitted; Wherein, among the first filtering device and the second filtering device, at least one filter is the filter according to any one of claims 1-7.

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