A three-dimensional micro-assembly low-frequency dual-band driving power amplifier

Abstract

The present invention relates to a three-dimensional micro-assembly low-frequency dual-band driving power amplifier, comprising a housing, an upper cover plate, and a lower cover plate, wherein the upper cover plate and the lower cover plate are respectively arranged at the upper and lower ends of the housing, a low-frequency connector, two radio frequency connectors, and two radio frequency glass beads are arranged on the outer surface of the housing, a driving power amplifier, an LTCC board, and two power amplifier carriers working in different bands are arranged inside the housing, control and power bare chips are mounted on the LTCC board through a micro-assembly process, the LTCC board is connected to the driving power amplifier through low-frequency glass beads, and components are arranged on the driving power amplifier; the low-frequency connector receives external power supply signals and control signals and transmits them to the control and power bare chips, and the control and power bare chips select the transmission path of the radio frequency signal according to the control signal. The present invention uses three-dimensional micro-assembly technology, has the characteristics of small size and high reliability, can work in low-frequency dual-bands, and meets the requirements of dual-frequency operation of active phased array radar.

Description

Technical Field

[0001] The invention relates to the field of microwave devices, and in particular to a three-dimensional micro-assembled low-frequency dual-band driving power amplifier. Background Art

[0002] In the design of active phased array radar T / R components, the driving power amplifier plays the role of excitation signal amplification, final power amplifier driving, and transceiver link switching. With the development of active phased array radar detection technology, single-frequency driving power amplifiers can no longer meet mission requirements. At the same time, in order to solve the problem of lightweight, micro-assembly technology gradually replaces discrete device assembly technology to achieve dual-frequency, high-integration and lightweight driving power amplifiers.

[0003] Currently, micro-assembly technology is widely used in power amplifiers in the S band and above. Low-frequency bands in the L band and below are mostly assembled using discrete devices. The driving power amplifiers generally operate at a single frequency, and the low frequency is achieved using discrete devices, which cannot meet the dual-frequency and lightweight requirements of active phased array radars. Summary of the invention

[0004] In order to solve the existing technical problems, the present invention provides a three-dimensional micro-assembled low-frequency dual-band driving power amplifier, which can be selected to work in a low-frequency dual-band to meet the requirements of multi-band operation and lightweight of active phased array radar.

[0005] The specific contents of the present invention are as follows:

[0006] A three-dimensional micro-assembly low-frequency dual-band driving power amplifier comprises a shell, an upper cover plate and a lower cover plate, wherein the upper cover plate and the lower cover plate are respectively arranged at the upper and lower ends of the shell, a low-frequency connector, two radio frequency connectors and two radio frequency glass beads are arranged on the outer surface of the shell, a driving power amplifier, an LTCC board and two power amplifier carriers working in different bands are arranged inside the shell, a control and power bare chip is mounted on the LTCC board through a micro-assembly process, the LTCC board is connected to the driving power amplifier through low-frequency glass beads, and components are arranged on the driving power amplifier; the low-frequency connector receives external power supply signals and control signals and transmits them to the control and power bare chips, and the control and power bare chips select the transmission path of the radio frequency signal according to the control signal.

[0007] Furthermore, the RF connector includes a first RF connector for inputting RF signals and a second RF connector for outputting RF signals. When the input RF signal is directly output without being processed, the second RF connector provides a switch path for the first RF connector.

[0008] Furthermore, the power amplifier chips are all connected to attenuators.

[0009] Furthermore, a partition is provided inside the shell, the driving amplifier is arranged below the partition, and the LTCC board and the amplifier carrier are arranged above the partition.

[0010] Furthermore, the partition includes platform parts located in the center and at both ends, the central platform part and the platform parts at both ends are connected by step parts, and a positioning device is provided above the central platform part inside the shell, and the shape of the LTCC board is adapted to the positioning device.

[0011] Furthermore, the shell is provided with a plurality of screw fixing holes, and the thickness of the shell at the positions where the screw fixing holes are located is smaller than the thickness of the entire shell.

[0012] Furthermore, the shell is made of aluminum alloy, and the top and bottom ends of the shell are provided with steps adapted to the edges of the upper cover plate and the lower cover plate respectively; screw fixing holes are provided at the four corners of the shell.

[0013] Furthermore, the upper cover plate and the lower cover plate are made of aluminum silicon material and are welded to the shell by airtight sealing welding technology; the power amplifier is fixed to the shell by screws, and the power amplifier carrier and the LTCC board and the attenuator are connected by gold wire bonding.

[0014] The present invention uses three-dimensional micro-assembly technology to design a low-frequency dual-band power amplifier, which has the characteristics of small size and high reliability, and can work in low-frequency dual bands to meet the dual-frequency operation requirements of active phased array radars. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The specific implementation of the present invention will be further explained below in conjunction with the accompanying drawings.

[0016] Figure 1 The schematic diagram of the structure of the three-dimensional micro-assembly low-frequency dual-band driving power amplifier of the present invention is shown in FIG. Figure 1 ;

[0017] Figure 2 The schematic diagram of the structure of the three-dimensional micro-assembly low-frequency dual-band driving power amplifier of the present invention is shown in FIG. Figure 2 ;

[0018] Figure 3 It is a schematic diagram of the exploded structure of the three-dimensional micro-assembled low-frequency dual-band driving power amplifier of the present invention. DETAILED DESCRIPTION

[0019] Combination Figure 1-Figure 3In the description of this embodiment, it should be understood that the directions or positional relationships indicated by directional words such as "front, back, up, down, left, right", "lateral, vertical, perpendicular, horizontal" and "top, bottom" are usually based on the directions or positional relationships shown in the drawings. They are only for the convenience of describing this embodiment and simplifying the description. Unless otherwise specified, these directional words do not indicate or imply that the devices or elements referred to must have a specific direction or be constructed and operated in a specific direction. Therefore, they cannot be understood as limiting the scope of protection of the present invention. The directional words "inside and outside" refer to the inside and outside relative to the outline of each component itself.

[0020] In the description of this embodiment, it should be understood that the use of terms such as "first" and "second" to limit components is only for the convenience of distinguishing the corresponding components. Unless otherwise stated, the above terms have no special meaning and therefore cannot be understood as limiting the scope of protection of the present invention.

[0021] This embodiment discloses a three-dimensional micro-assembled low-frequency dual-band driving power amplifier, comprising an upper cover plate 4, a lower cover plate 7, and a housing, wherein the upper cover plate 4 and the lower cover plate 7 are respectively covered at the upper and lower ends of the housing. Inside the housing, there are provided a driving amplifier 6, an LTCC board (low temperature co-fired ceramic) 5, two amplifier carriers 9 working in different bands, and two attenuators 10. The components on the driving amplifier 6 are mounted on a multi-layer printed circuit board by a microelectronic SMT mounting process, and the control and power bare chips are mounted on the LTCC board 5 by a micro-assembly process.

[0022] Two RF connectors 1 and a low-frequency connector 2 located between the two RF connectors 1 are provided in front of the housing, and two RF glass beads 3 are provided in the back of the housing. A partition is provided inside the housing, dividing the housing into two parts, the upper part is the front side, and the lower part is the back side, and both the front side and the back side are three-dimensionally stacked. The driving amplifier 6 is arranged below the partition, and the LTCC board 5, the amplifier carrier 9 and the attenuator 10 are arranged above the partition, and the driving amplifier 6 is connected to the LTCC board 5 through the low-frequency glass beads 8.

[0023] The low frequency connector 2 receives external power supply signals and control signals and transmits them to the control and power supply bare chip. The control and power supply bare chip selects a transmission path of the radio frequency signal according to the control signal.

[0024] The RF connector 1 includes a first RF connector (the RF connector on the right side in this embodiment) for inputting RF signals and a second RF connector (the RF connector on the left side in this embodiment) for outputting internal switch signals. When the input RF signal is directly output without being processed, it is directly output from the second RF connector, which is equivalent to the second RF connector acting as a switch path to directly output the input signal of the first RF connector.

[0025] The partition includes a platform portion located in the center and at both ends. The central platform portion and the platform portions at both ends are connected by a step portion. The LTCC board 5 is arranged on the central platform portion, and the driving amplifier 6 is arranged below the central platform portion and is located in a groove formed by the two step portions and the central platform portion.

[0026] The four corners of the push amplifier 6 are fixed to the partition by screws, and a positioning device integrated with the partition is provided above the partition corresponding to the screws, and the shape of the LTCC board 5 is adapted to the position of the positioning device. In this embodiment, the shape of the LTCC board 5 is a "cross", that is, the shape formed by cutting off a rectangular part from each of the four corners of the rectangular board, and the cut rectangular part can accommodate the positioning device. The shape of the positioning device is flat, extending from the edge of the step portion to the side of the shell. Through the setting of the positioning device, on the one hand, it is used to fix the screws of the push amplifier 6, and on the other hand, it can fix the LTCC board 5 to prevent the LTCC board 5 from shifting in the shell. In order to further fix the LTCC board 5 and the push amplifier 6, two screw holes are provided at the corresponding positions of the two and the central platform portion, and the three are further fixed by screws.

[0027] The low-frequency glass beads 3 are welded on the central platform and connected to the LTCC board 5 and the driving amplifier 6 respectively. The power signal and control signal input from the low-frequency connector 2 are transmitted to the driving amplifier 6, and then transmitted to the LTCC board 5 through the low-frequency glass beads 3 to reach the control and power bare chip. The power signal (±5V) provides power for the control and power bare chip. The control signal is a TTL control level. The control and power bare chip selects the transmission mode of the RF signal according to the control signal. At the same time, the low-frequency glass beads 3 also filter the burrs in the power signal and the control signal. In this embodiment, a total of 5 low-frequency glass beads 3 are set.

[0028] The power amplifier chip 9 is connected to the attenuator 10, both of which are arranged on the two end platforms, in a symmetrical arrangement, and are lower than the LTCC board 5 in space. The two RF glass beads 3 are respectively connected to the two attenuators 10. The two power amplifier chips 9 are power amplifier chips 9 of different bands. The attenuator 10 isolates the power amplifier chips 9 and attenuates the output power. The RF glass beads 3 are RF output ports of the dual-band power amplifier.

[0029] The overall shape of the shell is a rectangular parallelepiped, with screw fixing holes at the four corners of the shell. The four corners of the bottom of the shell are rounded, and the thickness of the shell at the location of the screw fixing holes is less than the thickness of the entire shell. During installation, the shell is installed on the heat dissipation cold plate by screws, and tin foil is placed on the bottom of the shell before installation to ensure good grounding and heat dissipation effects.

[0030] The top and bottom of the housing are both provided with steps adapted to the upper cover plate 4 and the lower cover plate 7, and steps are also provided at the edges of the upper cover plate 4 and the lower cover plate 7. In this embodiment, the upper cover plate 4 is an octagon and the lower cover plate 7 is a rounded rectangle.

[0031] In this embodiment, the housing is preferably made of aluminum alloy, the RF connector 1, the low-frequency connector 2 and the RF glass beads 3 are soldered to the housing by tin-lead welding, the upper cover plate 4 and the lower cover plate 7 are both made of aluminum silicon material, and are welded to the module housing by airtight sealing welding technology to ensure the shielding and airtightness of the module, and play an electromagnetic shielding and protection role. The RF part inside the module is interconnected by gold wire bonding.

[0032] The working process of this embodiment is as follows: the RF signal is input through the first RF connector, the power signal and the control signal are input to the driving amplifier through the low-frequency connector 2, and then transmitted to the control and power bare chip on the LTCC board 5 through the low-frequency glass bead. The control and power bare chip determines the processing method of the input RF signal according to the received control signal. This embodiment includes four processing methods: 1) the input signal is passed through the left power amplifier carrier 9 working in band 1, and the output signal is output through the left RF glass bead 3; 2) the input signal is passed through the right power amplifier carrier 9 working in band 2, and the output signal is output through the right RF glass bead 3; 3) no processing is performed, and the switch state signal is directly output through the second RF connector; 4) no output is performed, and the RF signal is absorbed by the components inside the power amplifier. Therefore, RF signal processing under different working modes can be realized.

[0033] The three-dimensional micro-assembled low-frequency dual-band driving power amplifier of the present application integrates the driving power amplifier 6, the power amplifier carrier 9, the control and power bare chip, the LTCC board 5 and the attenuator 10 on the front and back sides of the same driving power amplifier module through the three-dimensional micro-assembly technology. It has the characteristics of small size and high reliability. By switching the control and power bare chips, the driving power amplifier can choose to work in the low-frequency dual-band, meeting the needs of multi-band operation of the active phased array radar.

[0034] Many specific details are described in the above description to facilitate a full understanding of the present invention. However, the above description is only a preferred embodiment of the present invention. The present invention can be implemented in many other ways different from those described herein, so the present invention is not limited to the specific implementation disclosed above. At the same time, any person familiar with the art can make many possible changes and modifications to the technical solution of the present invention using the methods and technical contents disclosed above without departing from the scope of the technical solution of the present invention, or modify it into an equivalent embodiment of equivalent changes. Any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present invention without departing from the content of the technical solution of the present invention still falls within the scope of protection of the technical solution of the present invention.

Claims

1. A three-dimensional micro-assembly low-frequency dual-band driving power amplifier, characterized in that: It includes a shell, an upper cover plate and a lower cover plate. The upper cover plate and the lower cover plate are respectively arranged at the upper and lower ends of the shell. A low-frequency connector, two radio frequency connectors and two radio frequency glass beads are arranged on the outer surface of the shell. A driving amplifier, an LTCC board and two amplifier carriers working in different bands are arranged inside the shell. The control and power bare chips are mounted on the LTCC board through a micro-assembly process. The LTCC board is connected to the driving amplifier through a low-frequency glass bead. Components are arranged on the driving amplifier. The components on the driving amplifier are mounted on a multi-layer printed circuit board through a microelectronic SMT mounting process. The low-frequency connector receives external power signals and control signals and transmits them to the control and power bare chips. The control and power bare chips select the transmission path of the radio frequency signal according to the control signal. The RF connector includes a first RF connector for inputting RF signals and a second RF connector for outputting RF signals. When the input RF signal is directly output without being processed, the second RF connector provides a switch path for the first RF connector. A partition is provided inside the housing, the driving amplifier is arranged below the partition, and the LTCC board and the amplifier carrier are arranged above the partition; The partition includes platform parts located in the center and at both ends, the central platform part and the platform parts at both ends are connected by a step part, a positioning device is provided above the central platform part inside the shell, the shape of the LTCC board is adapted to the positioning device, and the power amplifier carrier is provided on the platform parts at both ends; the upper cover plate and the lower cover plate are made of aluminum silicon material and are welded to the shell by airtight sealing welding technology; the power amplifier is fixed to the shell by screws, and the power amplifier carrier and the LTCC board and the attenuator are connected by gold wire bonding.

2. The three-dimensional micro-assembly low-frequency dual-band driving power amplifier according to claim 1, characterized in that: The power amplifier chips are all connected to attenuators.

3. The three-dimensional micro-assembly low-frequency dual-band driving power amplifier according to claim 1, characterized in that: The shell is provided with a plurality of screw fixing holes, and the thickness of the shell at the positions where the screw fixing holes are located is smaller than the thickness of the entire shell.

4. The three-dimensional micro-assembly low-frequency dual-band driving power amplifier according to claim 3, characterized in that: The shell is made of aluminum alloy material, and the top and bottom ends of the shell are provided with steps adapted to the edges of the upper cover plate and the lower cover plate respectively; screw fixing holes are arranged at the four corners of the shell.

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