semiconductor devices

Abstract

The present invention provides a semiconductor device capable of improving heat dissipation. The semiconductor device (10) includes: a semiconductor element (40), a bonding wire (50) electrically connected to the semiconductor element (40), a connection terminal (30), and a sealing component (60) that seals the semiconductor element (40), the bonding wire (50), and a portion of the connection terminal (30). In addition, the connection terminal (30) includes a pin portion (31) and an anchor portion (32), the pin portion (31) having a flat plate-shaped bonding area for bonding to the bonding wire (50), and the anchor portion (32) protruding from a first side portion of the pin portion (31). Since the semiconductor device (10) can make the back surface (21) and the back surface (31d) exposed from the sealing main surface (63) of the sealing component (60) occupy a predetermined area or more, the heat dissipation of the semiconductor device (10) can be improved.

Description

Technical Field

[0001] The present invention relates to a semiconductor device. Background Art

[0002] Semiconductor devices include, for example, IGBTs (Insulated Gate Bipolar Transistors), power MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), FWDs (Free Wheeling Diodes), and SBDs (Schottky Barrier Diodes). As needed, IGBTs and FWDs can be arranged on a substrate to implement a power conversion device (see, for example, Patent Document 1).

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2017-191895 Summary of the Invention

[0006] Technical issues

[0007] However, semiconductor devices like these generate heat due to handling high currents and voltages. This high temperature can cause semiconductor device failures and potentially reduce device reliability. Therefore, semiconductor devices need to have improved heat dissipation.

[0008] The present invention has been made in view of this point, and an object of the present invention is to provide a semiconductor device capable of improving heat dissipation performance.

[0009] Technical Solution

[0010] According to one aspect of the present invention, a semiconductor device is provided, comprising: a semiconductor element; a connecting component electrically connected to the semiconductor element; a connecting terminal having a pin portion and an anchor portion, the pin portion being flat and having a first front side including a bonding area bonded to the connecting component, a back side opposite to the first front side, and a first side portion located between the first front side and the back side, the anchor portion protruding from the first side portion; and a sealing component sealing the semiconductor element, the connecting component and a portion of the connecting terminal, and having a sealing main surface on the back side, the pin portion having an internal pin portion sealed by the sealing component at least a portion of the first front side and the first side portion, and an external pin portion extending from the first sealing side surface of the sealing component, wherein in a top view, the anchor portion protrudes from at least one side of the first side portion opposite to the bonding area with a predetermined protrusion length, and in a cross-sectional view perpendicular to the long side direction of the pin portion, the second front side of the anchor portion is in the same plane as the first front side, and the protrusion length decreases toward the back side.

[0011] Technical Effects

[0012] According to the disclosed technology, heat dissipation can be improved, and a decrease in the reliability of a semiconductor device can be suppressed. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 This is a diagram (part 1) for explaining a semiconductor device according to an embodiment.

[0014] 2(A) and 2(B) are diagrams (part 2) for explaining the semiconductor device according to the embodiment.

[0015] Figure 3 This is a diagram (part 3) for explaining the semiconductor device according to the embodiment.

[0016] Figure 4 This is a diagram (part 1) for explaining connection terminals included in the semiconductor device according to the embodiment.

[0017] Figure 5 This is a diagram (part 2) for explaining connection terminals included in the semiconductor device according to the embodiment.

[0018] Figure 6 This is a diagram showing a front view of another connection terminal included in the semiconductor device according to the embodiment.

[0019] Figure 7 1 is a flowchart illustrating a method for manufacturing a semiconductor device according to an embodiment.

[0020] Figure 8 It is a diagram for explaining a step of installing a metal frame included in a method for manufacturing a semiconductor device according to an embodiment.

[0021] Figure 9 It is a diagram for explaining a sealing step included in the method for manufacturing a semiconductor device according to the embodiment.

[0022] Figure 10 It is a diagram for explaining a plating treatment step included in the method for manufacturing a semiconductor device according to the embodiment.

[0023] Explanation of symbols

[0024] 10: Semiconductor devices

[0025] 20: Chip pad

[0026] 21: Back

[0027] 22: IV drip

[0028] 30: Connection terminal

[0029] 31: Pin

[0030] 31a: First front

[0031] 31b: Junction area

[0032] 31c: First side

[0033] 31d: Back

[0034] 31e: One end face

[0035] 31f: The other end

[0036] 31g: Internal pins

[0037] 31h: External pin part

[0038] 32: Anchoring part

[0039] 32a: Second front

[0040] 32c: Second side

[0041] 32c1: First surface

[0042] 32c2: Second surface

[0043] 32c3: Third surface

[0044] 40: Semiconductor components

[0045] 50: Bonding wire

[0046] 60: Sealing parts

[0047] 61, 62: Sealing side

[0048] 63: Sealing main surface

[0049] 70: Lead frame

[0050] 71: Frame

[0051] 71a: Stamping area

[0052] 72: Pull rod

[0053] 72a: Stamping area DETAILED DESCRIPTION

[0054] Hereinafter, referring to the accompanying drawings, Figures 1 to 3 A semiconductor device according to an embodiment will be described. Figures 1 to 3 1 is a diagram for explaining a semiconductor device according to an embodiment of the present invention. Figure 1 (A) shows the Figure 1 (B) is a perspective view of the semiconductor device 10 as viewed in the direction of the arrow. Figure 1 FIG2(B) shows a top view of the semiconductor device 10. FIG2(A) shows a bottom view of the semiconductor device 10, and FIG2(B) shows Figure 1 (B) and a cross-sectional view of the semiconductor device 10 at the dotted line XX in FIG. 2(A). Figure 3 1 shows a perspective top view of the semiconductor device 10 .

[0055] In addition, in the embodiment, the front side refers to Figure 1 The surface of the semiconductor device 10 facing upward, for example, the surface on which the semiconductor element 40 is mounted in the die pad 20 of FIG. 2(B) is the front surface. Figure 1 The surface facing downward in the semiconductor device 10. For example, in the die pad 20 of FIG2(B), the surface opposite to the surface on which the semiconductor element 40 is mounted is the back surface. Figure 1 In other figures, the front and back sides also refer to the same direction.

[0056] The semiconductor device 10 includes a die pad 20, a plurality of connection terminals 30, a semiconductor element 40 disposed on the die pad 20, and bonding wires 50 electrically connecting the semiconductor element 40 and the connection terminals 30. The semiconductor device 10 is formed by sealing these components with a sealing member 60 in a substantially cubic shape.

[0057] The chip pad 20 is made of a metal with excellent thermal conductivity, such as aluminum, iron, silver, copper, or an alloy containing at least one of them. In addition, the opposite short sides of the chip pad 20 are formed by a frame portion (described later) that is cut off to form a hanging pin portion 22 that supports the chip pad 20. Two hanging pin portions 22 can be formed on each of the opposite short sides of the chip pad 20. The back side 21 of such a chip pad 20 is exposed from the sealing main surface 63 of the sealing component 60 corresponding to the back side, and is in the same plane as the sealing main surface 63. In addition, the end face of the hanging pin portion 22 of the chip pad 20 is exposed from the two opposite sealing side surfaces 62 of the sealing component 60.

[0058] The connecting terminal 30 has a flat pin portion 31 that is joined to the bonding wire 50 and anchor portions 32 formed on both sides of the pin portion 31. It should be noted that the details of the structure of the connecting terminal 30 will be described later. Four connecting terminals 30 are arranged on each side of the chip pad 20. It should be noted that the number of connecting terminals 30 is an example and is not limited to this case. Furthermore, the back surface 31d of the connecting terminal 30 is exposed from the sealing main surface 63 of the sealing component 60 and is in the same plane as the sealing main surface 63 and the back surface 21 of the chip pad 20. In addition, the connecting terminal 30, including at least the anchor portion 32, is sealed by the sealing component 60, and one end surface 31e of the connecting terminal 30 protrudes from the sealing side surface 61 of the sealing component 60. It should be noted that the protrusion from the sealing side surface 61 to the one end surface 31e at this time is greater than 0.25μm and less than 0.30μm. In addition, the pin portion 31 is composed of an internal pin portion 31g, which is the portion sealed by the sealing member 60, and an external pin portion 31h extending from the sealing side 61 of the sealing member 60. Such a connection terminal 30 is made of a metal such as copper or a copper alloy with excellent electrical conductivity. In addition, in order to improve corrosion resistance, a plating film is formed on the surface by, for example, plating treatment using a material composed of tin, silver, a tin alloy or a silver alloy as a plating film. It should be noted that in the connection terminal 30, copper or a copper alloy is exposed on the first front surface and first side portion (described later) of the internal pin portion 31g and one end surface 31e of the external pin portion 31h (no plating film is formed). On the other hand, a plating film is formed on the back surface 31d of the pin portion 31 and the first front surface and first side portion (described later) of the external pin portion 31h. In the substantially rectangular sealing member 60 , the end surfaces of the hanging pins 22 of the die pad 20 are exposed from two opposing sealing side surfaces 62 , and the external pins 31 h of the connection terminals 30 extend from the other two opposing sealing side surfaces 61 .

[0059] The semiconductor element 40 includes, for example, switching elements such as IGBTs and power MOSFETs made of silicon or silicon carbide. Such a semiconductor element 40, for example, has an input electrode (drain electrode or collector electrode) as a main electrode on the back side, and a control electrode (gate electrode) and an output electrode (source electrode or emitter electrode) as a main electrode on the front side. The back side of the above-mentioned semiconductor element 40 is bonded to the chip pad 20 by solder (not shown). In addition, the semiconductor element 40 may include, for example, diodes such as SBDs and FWDs. Such a semiconductor element 40 has an output electrode (cathode electrode) as a main electrode on the back side, and an input electrode (anode electrode) as a main electrode on the front side. In addition, the semiconductor element 40 may be an RC (Reverse-Conducting)-IGBT element that constitutes a circuit in which an IGBT and a FWD are connected in reverse parallel.

[0060] The bonding wire 50 is made of a highly conductive metal such as aluminum or copper, or an alloy containing at least one of these. The bonding wire 50 of the semiconductor device 10 is made of copper or a copper alloy. Furthermore, its diameter is preferably not less than 100 μm and not more than 1 mm. Alternatively, a connecting member such as a plate-shaped lead frame or a thin ribbon can be used in place of the bonding wire 50. For example, a thermosetting resin such as a maleimide-modified epoxy resin, a maleimide-modified phenolic resin, or a maleimide resin can be used for the sealing member 60.

[0061] Next, use Figure 4 The connection terminal 30 included in the semiconductor device 10 will be described in detail. Figure 4 1 is a diagram for explaining connection terminals included in a semiconductor device according to an embodiment. Figure 4 (A) shows a perspective view of the anchor portion 32 side of the connection terminal 30, Figure 4 (B) shows a top view of the connecting terminal 30 on the anchor portion 32 side. Figure 4 (C) shows a front view of the other end face 31f of the connecting terminal 30 on the anchor portion 32 side. Figure 4 The plating film formed on the connection terminal 30 is omitted from illustration.

[0062] The connecting terminal 30 includes a pin portion 31 and an anchor portion 32. The pin portion 31 has a flat plate-shaped bonding area 31b for bonding to the bonding wire 50, and the anchor portion 32 protrudes from the first side portion 31c of the pin portion 31. The pin portion 31 also includes an internal pin portion 31g and an external pin portion 31h as described above. The internal pin portion 31g has a first side portion 31c and a first front surface 31a including the bonding area 31b, and is sealed by a sealing member 60. It should be noted that a film including gold, silver, a gold alloy, or a silver alloy can be formed in the bonding area 31b. The external pin portion 31h protrudes from the sealing side surface 61 of the sealing member 60. The thickness T of such a pin portion 31 is, for example, greater than 100 μm and less than 400 μm. The width W of the pin portion 31 is the same as the thickness T of the pin portion 31, or is greater than the thickness T, for example, greater than 200 μm and less than 500 μm. The length of the lead portion 31 is larger than the width W of the lead portion 31 , and varies depending on the setting of the semiconductor device 10 , but is, for example, 400 μm or more and 1000 μm or less.

[0063] The anchor portion 32 protrudes from at least one of the first side portions 31c opposite to the bonding region 31b with a predetermined protruding length in a top view. In addition, in a cross-sectional view perpendicular to the longitudinal direction of the pin portion 31, the second front surface 32a of the anchor portion 32 is flush with the first front surface 31a, and the protruding length decreases toward the back surface 31d of the pin portion 31. The following describes a more specific structure of the anchor portion 32. The anchor portion 32 has a shape as shown in FIG. Figure 4The second front side 32a and the second side 32c of the cross-sectional shape shown in (C) are shown. The second front side 32a of the anchor portion 32 is configured to be approximately flush with the first front side 31a of the pin portion 31. The second side 32c of the anchor portion 32 comprises, in order from the second front side 32a side: a first curved surface 32c1 having a concave curved surface when viewed toward the inner side of the pin portion 31, a second curved surface 32c2 having a convex curved surface, and a third curved surface 32c3 having a concave curved surface. The first curved surface 32c1 is configured to have a taper angle α relative to the second front side 32a of the anchor portion 32 at a corner portion thereof with the second front side 32a. The taper angle α is greater than or equal to 30° and less than or equal to 75°. The first curved surface 32c1 rises from the second front side 32a at such an angle and bends concavely toward the pin portion 31 side toward the back side 31d of the pin portion 31. The second curved surface 32c2 continues from the first curved surface 32c1 and curves convexly toward the outside of the lead portion 31, continuing toward the back surface 31d of the lead portion 31. Furthermore, the curvature of the second curved surface 32c2 is greater than that of the first curved surface 32c1 and the third curved surface 32c3. The third curved surface 32c3 continues from the second curved surface 32c2 and curves concavely toward the lead portion 31, connecting to the first side portion 31c of the lead portion 31. The creepage distance of the third curved surface 32c3 is longer than both the creepage distance of the first curved surface 32c1 and the creepage distance of the second curved surface 32c2. Furthermore, the curvature of the third curved surface 32c3 is smaller than that of the first curved surface 32c1 and the second curved surface 32c2. The thickness t at the thickest point of the anchor portion 32 constructed as described above is equal to or less than the thickness T of the lead portion 31, for example, not less than 100 μm and not more than 300 μm. Such anchoring portion 32 is formed by clamping and pressing a flat metal member having pin portion 31 using a predetermined mold. It should be noted that anchoring portion 32 is not limited to being formed on first side portion 31c on both sides of pin portion 31 of connection terminal 30 as in the present embodiment, but may also be formed on first side portion 31c on one side of pin portion 31.

[0064] Next, use Figure 5 The case where the connection terminal 30 having such an anchor portion 32 is sealed by the sealing member 60 will be described. Figure 5 1 is a diagram for explaining connection terminals included in a semiconductor device according to an embodiment. Figure 5 (A) and (B) respectively show a top view and a cross-sectional view of a connection terminal of a reference example. Figure 5 (B) shows Figure 5 FIG. 1 is a cross-sectional view of the connection terminal 130 taken along the dashed line YY in FIG. 1 . Figure 5 (C) shows a cross-sectional view of the other end face 31f (anchor portion 32) of the connection terminal 30. Figure 5 Detailed reference numerals for the configuration of the connection terminal 30 shown in (C) are provided. Figure 5The plating film formed on the connection terminal 30 is also omitted from illustration.

[0065] First, in the semiconductor device 10, a case where a connection terminal 130 is provided instead of the connection terminal 30 of the reference example is described. Such a connection terminal 130 includes a pin portion 131 and an anchor portion 132 formed on both sides of the pin portion 131. The connection terminal 130 is T-shaped in a top view. In addition, the pin portion 131 and the anchor portion 132 are configured to have the same height. A bonding wire 50 is bonded to such a connection terminal 130 and sealed with a sealing component 60. At this time, the entire back side of the connection terminal 130 is exposed from the sealing main surface 63 of the sealing component 60, and the entire exposed back side of the connection terminal 130 is in the same plane as the sealing main surface 63. In such a case, moisture sometimes penetrates from the outside between the sealing main surface 63 of the sealing component 60 and the connection terminal 130. The moisture thus penetrated is as follows Figure 5 The path indicated by the dotted arrow in (B) reaches the bonding wire 50 (the junction with the connection terminal 130). Copper corrodes when it is exposed to moisture. Therefore, if the bonding wire 50 is made of copper or a copper alloy, the bonding wire 50 may become detached from the connection terminal 130.

[0066] On the other hand, in the case of connecting terminal 30, Figure 5 The same as the case of (B), the moisture that penetrates from the outside into the gap between the sealing main surface 63 of the sealing member 60 and the connection terminal 30 is as follows Figure 5 The path indicated by the dotted arrow in (C) reaches the bonding wire 50 (joint portion with the connection terminal 30). However, in the case of the connection terminal 30, the second side portion 32c of the anchor portion 32 formed on the first side portion 31c on both sides of the lead portion 31 is formed into a curved structure. Therefore, the distance (creepage distance: Figure 5 (C) dashed arrow) than Figure 5 (B) Furthermore, the creepage distance can be extended by bonding the bonding wire 50 to the pin portion 31 in the connection terminal 30. Therefore, the amount of water that enters the connection terminal 30 can be reduced compared to the connection terminal 130. Consequently, the bonding wire 50 can be maintained in contact with the connection terminal 30.

[0067] Furthermore, as described above, the second side portion 32c of the anchor portion 32, formed on the first side portion 31c on both sides of the pin portion 31 of the connecting terminal 30, is formed into a curved structure consisting of a first curved surface 32c1, a second curved surface 32c2, and a third curved surface 32c3. Therefore, when sealing the connecting terminal 30, the sealing member 60 easily surrounds the second side portion 32c of the anchor portion 32 and seamlessly seals the boundary between it and the connecting terminal 30. This prevents the formation of gaps at the boundary between the sealing member 60 and the connecting terminal 30. Therefore, it is difficult for the sealing member 60 to peel off from the connecting terminal 30. Furthermore, because the first curved surface 32c1, the second curved surface 32c2, and the third curved surface 32c3 are smoothly curved, cracks that occur at the corners of the sealing member 60 can be prevented. Furthermore, the intrusion of moisture into the bonding area 31b of the bonding wire 50 can be reduced, thereby effectively maintaining the bonding of the bonding wire 50.

[0068] Semiconductor device 10 having such a configuration includes a semiconductor element 40, a bonding wire 50 electrically connected to semiconductor element 40, a connection terminal 30, and a sealing member 60 that seals semiconductor element 40, bonding wire 50, and a portion of connection terminal 30. Furthermore, connection terminal 30 includes a lead portion 31 and an anchor portion 32. Lead portion 31 is flat and has a first front surface 31a including a bonding region 31b for bonding with bonding wire 50, a back surface 31d opposite first front surface 31a, and a first side portion 31c located between first front surface 31a and back surface 31d. Anchor portion 32 protrudes from first side portion 31c. Furthermore, lead portion 31 includes an internal lead portion 31g, in which at least a portion of first front surface 31a and first side portion 31c are sealed by sealing member 60, and an external lead portion 31h that protrudes from a sealed side surface 61 of sealing member 60. The anchor portion 32 protrudes from at least one side of the first side portion 31c opposite the bonding region 31b in a top view with a predetermined protrusion length. In a cross-sectional view perpendicular to the longitudinal direction of the lead portion 31, the second front surface 32a is flush with the first front surface 31a, and the protrusion length decreases toward the rear surface 31d. The semiconductor device 10 can thus ensure that the rear surface 21 and rear surface 31d exposed from the sealing main surface 63 of the sealing member 60 occupy at least a predetermined area, thereby improving the heat dissipation performance of the semiconductor device 10. Furthermore, in the semiconductor device 10, the connection terminal 30 includes the lead portion 31 and the anchor portions 32 on the first side portions 31c on both sides of the lead portion 31. Although the connection terminal 30 is not sealed to the rear surface 31d by the sealing member 60, the anchor portions 32 maintain the area of ​​close contact with the sealing member 60 and prevent a decrease in close contact with the sealing member 60. Therefore, even if compression or expansion occurs in the sealing member 60 due to the thermal cycle environment of the semiconductor device 10 , the connection terminals 30 can be prevented from falling off from the sealing member 60 .

[0069] It should be explained that Figure 6 Another example of the connection terminal 30 will be described. Figure 6 1 is a diagram showing a front view of another connection terminal included in the semiconductor device of the embodiment. Figure 6 The connecting terminal 30 is shown with Figure 4 (C) corresponds to a front view of the other end surface 31f side. Figure 6 The thickness T of the pin portion 31 of the connecting terminal 30 shown is substantially the same as the thickness t of the thickest portion of the anchor portion 32. Figure 4 The connection terminal 30 is the same as that of the connection terminal 30. Even in this case, the connection terminal 30 can be obtained as Figure 4 The connecting terminal 30 shown has the same effect.

[0070] Next, use Figures 7 to 10 as well as Figures 1 to 3 A method for manufacturing such a semiconductor device 10 will be described. Figure 7 1 is a flowchart illustrating a method for manufacturing a semiconductor device according to an embodiment. Figure 8 is a diagram for explaining a metal frame installation step included in a method for manufacturing a semiconductor device according to an embodiment. Figure 9 : is a diagram for explaining a sealing step included in a method for manufacturing a semiconductor device according to an embodiment. Figure 10 This is a diagram for explaining the plating process steps included in the method for manufacturing a semiconductor device according to the embodiment. Figures 8 to 10 The main parts are shown.

[0071] [Step S1] A lead frame (described later) including the die pad 20 and the connection terminals 30, the semiconductor element 40, the sealing member 60, etc. are prepared in advance. The above-described components are prepared for the semiconductor element 40 and the sealing member 60. The lead frame is made of, for example, copper or a copper alloy.

[0072] [Step S2] The lead frame is set at a predetermined position. For example, Figure 8 The illustrated lead frame 70 includes a pair of frame portions 71 to which the die pad 20 is connected via hanging pin portions 22, and a tie rod 72 that connects the pair of frame portions 71 and to which the plurality of connection terminals 30 are connected. In this lead frame 70, the die pad 20 and the plurality of connection terminals 30 are integrally formed. Such a lead frame 70 can be formed by stamping a metal plate using a predetermined die. It should be noted that during stamping, the connection terminals 30 of the lead frame 70 are pre-formed with what will later become anchor portions 32. As described above, the anchor portions 32 are formed by clamping the plate-shaped connection terminals 30 using a predetermined die.

[0073] [Step S3] The semiconductor element 40 is placed on the die pad 20 of the lead frame 70 by soldering or the like, and the semiconductor element 40 and the tie bar 72 are electrically connected by the bonding wire 50. Note that illustration of this step is omitted.

[0074] [Step S4] Figure 9 As shown, the semiconductor element 40 arranged on the die pad 20 of the lead frame 70, the region including the anchor portion 32 of the connection terminal 30, and the bonding wire 50 are molded in a predetermined mold using a sealing member 60 and sealed using the sealing member 60. It should be noted that although the illustration is omitted, Figure 9 On the side opposite to the illustrated side, the back surfaces of the die pad 20 and the connection terminals 30 are exposed.

[0075] [Step S5] The exposed portions of the die pad 20 and the connection terminal 30 of the lead frame 70 are plated with tin, silver, tin alloy or silver alloy. Figure 9 On the opposite side of the illustrated side, the backsides of the die pad 20 and connecting terminals 30 are also plated. The die pad 20 and connecting terminals 30 are made of copper or a copper alloy. Solder easily adheres to the locations of the die pad 20 and connecting terminals 30 where the plating film, made of tin, silver, a tin alloy, or a silver alloy, is formed. Therefore, when soldering such a semiconductor device to an external wiring component, a good bond is achieved.

[0076] [Step S6] The die pad 20 and the connection terminal 30 sealed by the sealing member 60 are separated from the frame portion 71 and the tie rod 72 of the lead frame 70. Figure 10 As shown in FIG. 1 , the punching area 72a of the tie rod 72 is punched by a die. The connection terminal 30 extends from the opposite sealing side surface 61 of the sealing member 60. By punching the punching area 72a of the opposite sealing side surface 61 at the same time, the connection terminal 30 remaining on the sealing member 60 side can be punched without excessive deformation. Figure 1 ) produces a drooping surface (omitted from the figure) and no plating film is formed. The external pin portion 31h of such a connection terminal 30 produces a color difference depending on whether or not the plating film is formed. Therefore, by visually observing the one end surface 31e of the connection terminal 30 (refer to Figure 1 ) and the back side of the connecting terminal 30, so that it can be determined whether the connecting terminal 30 has been plated.

[0077] Alternatively, as a method of separating the tie rod 72 other than stamping, cutting with a dicing blade is also possible. However, soldering is not suitable for the connection terminal 30 separated by cutting. Therefore, soldering cannot reliably connect the wiring component to the connection terminal 30. For this reason, stamping is the preferred method for separating the tie rod 72.

[0078] Similarly, the die pad 20 is separated from the frame portion 71 by stamping the punched areas 71a of the hanging pins 22 using a die. The hanging pins 22 extend from the opposing sealing side surfaces 62 of the sealing member 60. By simultaneously stamping the stamped areas 71a of the opposing sealing side surfaces 62, the stamping can be performed without causing excessive deformation of the hanging pins 22 remaining in the sealing member 60. The exposed surfaces of the hanging pins 22 formed by such stamping have a drooping surface (not shown) and are not plated. Therefore, by visually inspecting the end surfaces of the hanging pins 22 and the back side of the die pad 20, it is possible to determine whether the die pad 20 has been plated. Furthermore, the hanging pins 22 and the connecting terminals 30 are respectively exposed from the perpendicular sealing side surfaces 61 and 62 of the sealing member 60 of the semiconductor device 10. It should be noted that the stamped areas 72a of the tie rod 72 and the stamped areas 71a of the hanging pins 22 can be stamped simultaneously. Through the above process, we can obtain Figures 1 to 4 The semiconductor device 10 is shown.

Claims

1. A semiconductor device, characterized in that: include: semiconductor components; a connecting component electrically connected to the semiconductor element; a connecting terminal having a pin portion and an anchor portion, wherein the pin portion is flat and has a first front surface including a bonding area to be bonded to the connecting member, a back surface opposite to the first front surface, and a first side portion located between the first front surface and the back surface, and the anchor portion protruding from the first side portion; as well as a sealing member that seals the semiconductor element, the connection member, and a portion of the connection terminal and includes a sealing main surface on the back surface; The pin portion includes an inner pin portion whose first front surface and at least a portion of the first side portion are sealed by the sealing member, and an outer pin portion extending from a first sealing side surface of the sealing member. In a plan view, the anchor portion protrudes from at least one side of the first side portion opposite to the bonding area with a predetermined protruding length, and in a cross-sectional view perpendicular to the long side direction of the pin portion, the second front surface of the anchor portion is flush with the first front surface, and the protruding length decreases toward the back surface. The anchor portion includes a second side portion, and in the cross-sectional view, the second side portion is inclined at an acute angle with respect to the second front surface at a corner portion with the second front surface. The second side portion includes, in order from the second front side, a first curved surface having a concave curved surface when viewed toward the inner side of the lead portion, a second curved surface having a convex curved surface, and a third curved surface having a concave curved surface. The curvature of the second curved surface is greater than the curvature of each of the first curved surface and the third curved surface.

2. The semiconductor device according to claim 1, wherein The anchor portion is formed on each of a pair of opposite sides of the lead portion sandwiching the bonding region in the plan view.

3. The semiconductor device according to claim 1 or 2, wherein: In the cross-sectional view, the angle formed between the second side portion and the second front surface at a corner portion thereof is not less than 30° and not more than 75°.

4. The semiconductor device according to claim 1, wherein The curvature of the third curved surface is smaller than the curvature of the first curved surface.

5. The semiconductor device according to claim 1, wherein The back surface of the internal pin portion is exposed from the sealing main surface, and the back surface of the internal pin portion and the sealing main surface form a flush plane.

6. The semiconductor device according to claim 1, wherein The semiconductor element has a control electrode and an output electrode on the front surface, and an input electrode on the back surface. The semiconductor device further includes a die pad having a device region on the front side and a back side of the semiconductor device. The sealing member seals the front surface and side surfaces of the die pad such that the sealing main surface exposes the back surface of the die pad.

7. The semiconductor device according to claim 6, wherein: The sealing member seals the plurality of connection terminals and further includes a second sealing side surface on the opposite side of the first sealing side surface across the die pad. One end surfaces of the plurality of connection terminals protrude from the first sealing side surface and the second sealing side surface, respectively.

8. The semiconductor device according to claim 7, wherein In the sealing member, the hanging pin portion of the die pad is exposed from a third sealing side surface and a fourth sealing side surface perpendicular to the first sealing side surface and the second sealing side surface, respectively.

9. The semiconductor device according to claim 6, wherein The sealing main surface of the sealing member and the exposed rear surface of the die pad are flush with each other.

10. The semiconductor device according to claim 1, wherein The connecting member is made of copper or a copper alloy.

11. The semiconductor device according to claim 1, wherein The connection terminal is made of copper or a copper alloy, and the bonding region is formed with a film including gold, silver, a gold alloy, or a silver alloy.

12. The semiconductor device according to claim 7, wherein The connecting terminal is made of copper or copper alloy. The first front surface and the first side portion of the inner pin portion are not formed with a plating film, and the end surface of the outer pin portion extending from the sealing member is not formed with a plating film, A plating film is formed on the rear surface of the lead portion and the first front surface and the first side portion of the external lead portion.

13. The semiconductor device according to claim 12, wherein: The plating film is composed of tin, silver, tin alloy or silver alloy.

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