Valve equipment and semiconductor device processing equipment

Abstract

The utility model discloses a valve device and a semiconductor device processing device. The valve apparatus includes: a valve body including an external coil therein; the valve plate is movably arranged in the valve body, and the opening degree of the valve equipment is adjusted by adjusting the pose of the valve plate; and an internal coil provided inside the valve plate, the internal coil generating an eddy current through an alternating magnetic field generated in the valve body by an alternating voltage applied to the external coil to inductively heat the valve plate. By means of the valve equipment, the surface of the valve plate can be directly heated, the temperature of the valve plate is increased, and therefore blockage of the valve plate caused by deposition of reaction by-products on the valve plate in the carbon mask deposition process is reduced.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor manufacturing, specifically relates to a valve equipment and a kind of processing equipment of conductor device. BACKGROUND

[0002] In the processing technology of semiconductor device, usually need to control the pressure in reaction cavity by the valve plate connected with reaction cavity, so that it meets the demand of process environment.

[0003] In carbon mask deposition process, reaction gas is usually hydrocarbon, and its byproduct is easy to adhere to valve plate in the form of carbon film. Moreover, since there is hydrogen after dissociation in byproduct, hydrogen itself can etch carbon film. And when the ambient temperature is higher, the ability of carbon film to absorb hydrogen is lower, and the etching ability of hydrogen is stronger. When the ambient temperature is lower, the etching ability of hydrogen is reduced, and it is easier to be absorbed by carbon film, thereby more byproducts are accumulated on valve plate, causing valve plate to be stuck or valve to be blocked.

[0004] In the prior art, heating method is usually used to effectively reduce the deposition rate of byproduct. The heating unit of current heating valve equipment is usually arranged at the flange position of valve body, which cannot directly heat valve plate, and increases the possibility of accumulating byproduct at valve plate. Moreover, if butterfly valve equipment is used, the flow resistance at valve plate is large, and the flow capacity is reduced, thereby further causing reaction byproduct to be easy to deposit at valve plate. Therefore, the inner wall of pipeline near valve plate and the surface of valve plate of current valve equipment are still easy to accumulate many difficult-to-clean byproducts.

[0005] In order to solve the above problems existing in the prior art, an improved valve equipment technology is urgently needed in the field, which can directly heat the surface of valve plate, increase the temperature at valve plate, and thereby reduce the deposition of reaction byproduct on valve plate in carbon mask deposition process, causing valve plate to be blocked. SUMMARY

[0006] The following gives a brief summary of one or more aspects to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all contemplated aspects, and neither is it intended to identify key or critical elements of all aspects nor to delineate the scope of any or all aspects. Its only purpose is to present some concepts of one or more aspects in a simplified form, before the more detailed description is given later.

[0007] In order to overcome the above-mentioned defects existing in the prior art, the utility model provides a kind of valve equipment and a kind of processing equipment of semiconductor device, which can directly heat the surface of valve plate, increase the temperature at valve plate, and thereby reduce the deposition of reaction byproduct on valve plate in carbon mask deposition process, causing valve plate to be blocked.

[0008] Specifically, according to the valve device provided by the first aspect of the utility model, it comprises: a valve body, which comprises an external coil inside; a valve plate, which is movably arranged in the valve body, and the opening degree of the valve device is adjusted by adjusting the position of the valve plate; and an internal coil, which is arranged inside the valve plate, and the internal coil generates eddy current by the alternating magnetic field generated in the valve body by applying alternating voltage to the external coil, so as to inductively heat the valve plate.

[0009] Further, in some embodiments of the utility model, the valve body comprises an annular valve body, and the valve plate is a circular valve plate, which is rotatably arranged in the annular valve body, and the opening degree of the valve device is adjusted by rotating the circular valve plate.

[0010] Further, in some embodiments of the utility model, the rotation angle range of the circular valve plate is 0-90°, wherein when the rotation angle of the circular valve plate reaches 90°, the eddy current energy inducted by the circular valve plate is maximum.

[0011] Further, in some embodiments of the utility model, the internal coil is an annular coil arranged inside the circular valve plate and matched with the shape of the circular valve plate.

[0012] Further, in some embodiments of the utility model, the middle part of the annular valve body is provided with a valve plate rotating shaft, and the valve plate rotating shaft penetrates through the circular valve plate to rotatably fix the circular valve plate in the annular valve body.

[0013] Further, in some embodiments of the utility model, the valve device further comprises: a controller connected with the valve body and the valve plate, which is used for controlling the position of the valve plate to adjust the valve plate to a preset opening degree.

[0014] Further, in some embodiments of the utility model, the lower part of the controller is provided with a cooling fin to dissipate heat when the controller works.

[0015] Further, in some embodiments of the utility model, a heating unit is arranged in the valve body to electrically heat the valve body.

[0016] Further, in some embodiments of the utility model, an ultrasonic transducer is further arranged in the valve body to provide vibration energy to the valve body, so that the deposits on the valve body are vibrated to separate from the valve body.

[0017] Furthermore, the processing equipment for the semiconductor device provided by the second aspect of the present application comprises: a reaction cavity; a gas source connected to the reaction cavity to provide a process gas required by a process procedure or a cleaning gas required by a cleaning procedure into the reaction cavity; the valve equipment provided by the first aspect of the present application is arranged in a front-stage vacuum pipeline between the gas source and the reaction cavity, and is used to deliver the process gas or the cleaning gas into the reaction cavity to perform the process procedure or the cleaning procedure. BRIEF DESCRIPTION OF DRAWINGS

[0018] The above features and advantages of the present application can be better understood by reading the detailed description of embodiments of the present application in conjunction with the following drawings, in which the components are not necessarily drawn to scale and components of similar or identical function or structure can have the same or similar reference numbers. The detailed description of the embodiments of the present application is provided with reference to the accompanying drawings.

[0019] Figure 1 Fig. 1 shows a structural schematic diagram of a valve equipment provided according to some embodiments of the present application;

[0020] Figure 2 Fig. 2 shows a partial enlarged view of the valve equipment shown in Fig. 1; and Figure 1 Fig. 3 shows a structural schematic diagram of the valve equipment after the valve plate is rotated according to some embodiments of the present application.

[0021] Figure 3 Fig. 3 shows a structural schematic diagram of the valve equipment after the valve plate is rotated according to some embodiments of the present application.

[0022] Reference signs: valve equipment

[0023] 100 valve equipment;

[0024] 110 valve body;

[0025] 120 valve plate;

[0026] 121 valve plate rotating shaft;

[0027] 130 controller;

[0028] 131 heat dissipation fin;

[0029] 140 flange;

[0030] 141 external lead wire; and

[0031] 210 inner coil. DETAILED DESCRIPTION

[0032] The following describes the embodiments of the present application by specific examples, and those skilled in the art can easily understand other advantages and effects of the present application from the disclosure. Although the description of the present application will be introduced in combination with the preferred embodiments, it does not mean that the features of the present application are limited to the embodiments. On the contrary, the purpose of introducing the present application in combination with the embodiments is to cover other options or modifications that can be extended based on the claims of the present application. In order to provide a deep understanding of the present application, many specific details will be included in the following description. The present application can also be implemented without using these details. In addition, in order to avoid confusion or obscure the focus of the present application, some specific details will be omitted in the description.

[0033] In the description of the present application, it should be pointed out that, unless otherwise explicitly specified and limited, the terms "mounting", "connection", "connection" should be understood broadly, for example, it can be fixed connection, or detachable connection, or integrally connected; it can be mechanical connection, or electrical connection; it can be directly connected, or indirectly connected through intermediate medium, or the communication inside two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0034] In addition, "up", "down", "left", "right", "top", "bottom", "horizontal", "vertical" used in the following description should be understood as the orientation shown in the paragraph and the related drawings. Such relative terms are only for the convenience of description, and they do not mean that the devices described should be manufactured or operated in a particular orientation, so they should not be understood as a limitation on the present application.

[0035] It can be understood that although the terms "first", "second", "third" and the like can be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below can be called the second component, region, layer and / or part without deviating from some embodiments of the present application.

[0036] As described above, the method of heating is commonly used in the prior art to effectively reduce the deposition rate of by-products, and the heating unit of the current heating valve device is usually arranged at the flange position of the valve body, which cannot directly heat the valve plate, increasing the possibility of accumulating by-products at the valve plate. Moreover, if butterfly valve equipment is used, the valve plate is controlled by rotating, and the flow resistance at the valve plate is large, so the flow capacity is reduced, which further causes the reaction by-products to easily deposit at the valve plate. Therefore, the current valve device still easily accumulates a lot of difficult-to-clean by-products on the inner wall of the pipeline near the valve plate and the surface of the valve plate.

[0037] In order to solve the above problems existing in the prior art, the utility model provides a valve device and a semiconductor device processing equipment, which can directly heat the surface of the valve plate, improve the temperature at the valve plate, and thus reduce the deposition of reaction by-products in the carbon mask deposition process on the valve plate to cause the valve plate to be blocked.

[0038] In some non-limiting embodiments, the above valve device provided by the first aspect of the utility model can be configured in the above semiconductor device processing equipment provided by the second aspect of the utility model.

[0039] The working principle of the above valve device will be described below in combination with some embodiments of the semiconductor device processing equipment. Those skilled in the art can understand that the embodiments of the semiconductor device processing equipment are only some non-limiting embodiments provided by the utility model, which are intended to clearly demonstrate the main concept of the utility model and provide some specific schemes for facilitating the public to implement, rather than for limiting the entire working mode or the entire function of the valve device. Similarly, the valve device is also only a non-limiting embodiment provided by the utility model, which does not limit other configuration objects in the semiconductor device processing equipment.

[0040] Specifically, in some embodiments of the utility model, the semiconductor device processing equipment can mainly include a reaction cavity, a gas source and a valve device. The process flow can be carried out in the reaction cavity. Specifically, after the substrate is sent into the reaction cavity, various types of thin film deposition process reactions can be carried out on the substrate. The reaction cavity can be connected to the process gas source to provide the process gas required by different processes into the reaction cavity. The valve device can be arranged in the foreline between the above-mentioned gas source and the reaction cavity, which is used to control the pressure in the reaction cavity and deliver the process gas into the reaction cavity to carry out the process flow.

[0041] In some optional embodiments, the semiconductor device processing equipment can select a plasma enhanced chemical vapor deposition (PECVD) device to carry out the carbon mask deposition process in the reaction cavity. Specifically, it can include forming an initial amorphous carbon hard mask layer on the semiconductor substrate, and then treating the initial amorphous carbon hard mask layer with a nitrogen-containing plasma to form a carbon hard mask layer. Amorphous carbon has some advantages that other materials do not have as a hard mask, for example, amorphous carbon has good light transmittance, which is more conducive to layer alignment in photolithography. In addition, amorphous carbon has high hardness, has high etching selectivity compared to other materials, and amorphous carbon is a very easy-to-remove material.

[0042] Further, please refer toFigure 1 , Figure 1 A schematic diagram of the structure of a valve device provided according to some embodiments of the present invention is shown.

[0043] like Figure 1 As shown, in some embodiments of this utility model, the valve device 100 mainly includes a valve body 110, a valve plate 120, and an internal coil. The interior of the valve body 110 may include an external coil (not shown in the drawings). The valve plate 120 may be movably disposed in the valve body 110, and the opening degree of the valve device 100 can be adjusted by adjusting the position of the valve plate 120.

[0044] Please refer to Figure 2 , Figure 2 for Figure 1 A partially enlarged view of the valve equipment shown. (See attached image.) Figure 2 As shown, the valve plate 120 may include an internal coil 210, also known as an induction coil. This internal coil can cooperate with an external coil located inside the valve body 110 to heat the valve plate 120 via electromagnetic induction (referred to as induction heating). Induction heating utilizes electromagnetic induction to generate an internal current in the material being heated, and then relies on the energy of these eddy currents to achieve the heating purpose. By directly heating the valve plate 120, the deposition of reaction byproducts on the valve plate 120 can be reduced.

[0045] Specifically, in some embodiments of this invention, after applying an alternating voltage to the external coil inside the valve body 110, the alternating current flowing through the external coil can generate an alternating magnetic field inside the valve body 110, wherein the alternating magnetic field passes through the valve plate 120 located inside the valve body 110. The alternating magnetic field can generate eddy currents in the valve plate 120, heating the valve plate 120.

[0046] Combination Figure 1 and Figure 2 As shown, optionally, the valve device 100 can be a butterfly valve. The valve body 110 may include an annular valve body, and the valve plate 120 may be a circular valve plate 120 corresponding to the size of the annular valve body 110. The circular valve plate 120 can be rotatably disposed in the annular valve body 110, and the opening degree of the butterfly valve device can be adjusted by rotating the circular valve plate 120. Specifically, as... Figure 2 As shown, a valve plate pivot 121 may be provided in the middle of the annular valve body 110. The valve plate pivot 121 can pass through the circular valve plate 120 to rotatably fix the circular valve plate 120 in the annular valve body 110.

[0047] Furthermore, the internal coil 210 can be made into different shapes depending on the object being heated. Optionally, since the valve plate 120 in the butterfly valve device is circular, the internal coil 210 can be configured as an annular coil that matches the shape of the circular valve plate.

[0048] Continuing to refer to Figure 1 As shown in the drawings, in some embodiments, the valve device 100 can further comprise a controller 130. The controller 130 can be connected to the valve body 110 and the valve plate 120, for controlling the position of the valve plate 120, so as to adjust the valve plate 120 to a preset opening degree. In the embodiment of the butterfly valve device, by rotating the circular valve plate 120, the flow capacity of the pipeline can be changed, and by adjusting the opening degree of the butterfly valve device, the pressure of the reaction chamber can be controlled. Alternatively, the valve device 100 can also be selected from other types of valve devices, such as plate valves, gate valves, etc., by adjusting the position of the valve plate to adjust the opening degree of the valve device. Those skilled in the art can understand that the specific type of the valve device is not limited to the several types provided by the present application, and the present case is taken as an example of the butterfly valve device for illustrative description.

[0049] As shown in the drawings, Figure 1 In some alternative embodiments, the controller 130 can further be provided with a cooling fin 131 below. Since the controller 130 internally includes many circuits that are not resistant to high temperature, the controller 130 can be cooled by the cooling fin 131.

[0050] Next, please refer to Figure 3 , Figure 3 Fig. 4 shows a structural schematic diagram of the valve device after the valve plate is rotated according to some embodiments of the present application.

[0051] As shown in the drawings, Figure 3 In some embodiments, in the butterfly valve device, the rotation angle range of the circular valve plate 120 can be 0-90°. That is, the rotation angle range of the internal coil 210 provided in the circular valve plate 120 can be 0-90°. In theory, after an alternating voltage is applied to the external coil, as long as the rotation angle of the circular valve plate 120 is greater than 0 degrees, eddy current can be generated to heat the valve plate 120, but the closer the rotation angle of the circular valve plate 120 to 90 degrees, the higher the heating efficiency. When the rotation angle of the circular valve plate 120 reaches 90°, the internal coil 210 is directly opposite the external coil in the valve body 110. After an alternating voltage is applied to the external coil, the internal coil 210 senses the eddy current (induced current) by electromagnetic induction, and the energy of the induced current is the largest, and the heating energy of the circular valve plate 120 is the largest.

[0052] As shown in the drawings, Figure 3 In some embodiments, the temperature adjustment of the valve plate 120 is open-loop control, which can be adjusted by the input power of the external coil.

[0053] Further, continuing to refer to Figure 1In some optional embodiments, a heating unit (not shown in the drawings) can also be arranged in the valve body 110 for electrically heating the valve body 110. For example, in a butterfly valve device, the heating unit arranged in the valve body 110 can be a heating ring.

[0054] In other embodiments, a heating unit can also be integrated in the valve plate 120 for electrically heating the valve plate 120, thereby reducing the accumulation of by-products by directly heating the valve plate 120.

[0055] In the above embodiments of the utility model, the valve plate 120 is inductively heated and the valve body 110 is electrically heated, which jointly act on each other by increasing the temperature of the valve plate 120 and the valve body 110, thereby reducing the hydrogen absorption capacity of the carbon film in the carbon mask deposition process and improving the etching capacity of hydrogen, which is conducive to preventing the formation of dense and difficult-to-clean deposits on the surface of the valve plate 120 and the inner wall of the valve body 110.

[0056] Further, in some preferred embodiments, the inside of the valve body 110 can also include an ultrasonic transducer (not shown in the drawings), which can be used to provide vibration energy to the valve body 110 to make the deposits on the valve body 110 vibrate and detach from the valve body 110. Specifically, it can be returned to Figure 1 As shown, the outer side of the valve body 110 can be connected to the pipeline through the flange 140. An ultrasonic transducer can be integrated in the valve body 110 and the outer wall of the flange 140, which can be used to further prevent the formation of dense and difficult-to-clean deposits on the inner wall of the pipeline near the valve body 110. As Figure 1 As shown, the ultrasonic transducer inside the valve body 110 can be connected to an external power source through an external lead 141.

[0057] So far, the specific structure of the valve device 100 provided by one aspect of the utility model has been introduced. Next, the specific application of the valve device 100 in the process equipment of semiconductor devices will be introduced through the carbon mask deposition process.

[0058] When the carbon mask deposition process flow is prepared in the reaction chamber of the process equipment of semiconductor devices, the process gas of hydrocarbon can be introduced into the reaction chamber through the process gas source. Then, the rotation opening of the valve plate 120 in the valve device 100 is adjusted to stabilize the pressure in the reaction chamber. At the same time, the valve plate 120 in the valve device 100 can be adjusted to the process preset opening to make the process gas enter the reaction chamber. After that, the radio frequency power can be input into the reaction chamber to excite the process gas in the reaction chamber to generate plasma, i.e. to start the glow, and to carry out the carbon mask deposition process.

[0059] At this time, the controller 130 can control to apply an alternating voltage to the external coil in the valve body 110, and the alternating current flowing through the external coil can generate an alternating magnetic field in the valve body 110, wherein the alternating magnetic field passes through the valve plate 120 located in the valve body 110. The alternating magnetic field can generate eddy current in the valve plate 120 to heat the valve plate 120. In addition, the controller 130 can also control to open the heating unit in the valve body 110 to electrically heat the valve body 110. That is, during the carbon mask deposition process, both the valve plate 120 and the valve body 110 in the valve device 100 can be kept in a heated state to at least reduce the deposition of reaction by-products on the valve plate 120.

[0060] In summary, the utility model provides a valve device and a processing equipment of semiconductor device, can directly heat valve plate surface, improve the temperature at valve plate, thereby reduce the deposition of reaction by-product in carbon mask deposition process on valve plate causes valve plate to be blocked.

[0061] The foregoing description of the present disclosure has been provided for the purposes of enabling any person skilled in the art to make or use the present disclosure. Various modifications to the present disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein can be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the present disclosure is not intended to be limited to the examples described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A valve apparatus, characterized by, The valve device comprises: a valve body, which internally comprises an external coil; a valve plate movably arranged in the valve body, and the opening degree of the valve device is adjusted by adjusting the position of the valve plate; and an internal coil arranged inside the valve plate, which generates eddy current to inductively heat the valve plate via the alternating magnetic field generated in the valve body by the alternating voltage applied to the external coil.

2. The valve apparatus of claim 1, wherein The valve body comprises an annular valve body, and the valve plate is a circular valve plate rotatably arranged in the annular valve body, and the opening degree of the valve device is adjusted by rotating the circular valve plate.

3. The valve apparatus of claim 2, wherein The rotation angle of the circular valve plate ranges from 0 to 90°, and when the rotation angle of the circular valve plate reaches 90°, the eddy current energy inducted by the circular valve plate is maximum.

4. The valve apparatus of claim 2, wherein The internal coil is an annular coil arranged inside the circular valve plate and matched with the shape of the circular valve plate.

5. The valve apparatus of claim 2, wherein The middle part of the annular valve body is provided with a valve plate rotating shaft, which penetrates the circular valve plate to rotatably fix the circular valve plate in the annular valve body.

6. The valve apparatus of claim 1, wherein Further comprising: a controller connected to the valve body and the valve plate, which is used to control the position of the valve plate to adjust the valve plate to a preset opening degree.

7. The valve apparatus of claim 6, wherein The lower part of the controller is provided with a cooling fin to dissipate heat when the controller is working.

8. The valve apparatus of claim 1, wherein The valve body is provided with a heating unit for electrically heating the valve body.

9. The valve apparatus of claim 8, wherein The valve body is also provided with an ultrasonic transducer for providing vibration energy to the valve body to make the deposits on the valve body vibrate and separate from the valve body.

10. A processing apparatus of a semiconductor device, characterized by comprising: Comprise: a reaction cavity; a gas source connected to the reaction cavity to provide process gas required by a process or cleaning gas required by a cleaning process into the reaction cavity; The valve device according to any one of claims 1-9 is arranged in a front-stage vacuum pipeline between the gas source and the reaction cavity, which is used to deliver the process gas or the cleaning gas into the reaction cavity to carry out the process or the cleaning process.

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