A micro-integrated multi-channel luminous controllable semiconductor laser array light source

Abstract

The present invention discloses a micro-integrated multi-channel controllable semiconductor laser array light source, including: a laser chip and a ceramic heat sink, the P surface of the laser chip is provided with a plurality of chip positive electrodes, and the plurality of chip positive electrodes are provided with an isolation groove 1, and the N surface of the laser chip is an integral chip negative electrode; the front of the ceramic heat sink is provided with a plurality of welding areas, and the plurality of welding areas are provided with an isolation groove 2 between the plurality of welding areas, and the plurality of welding areas are respectively welded and connected with the plurality of chip positive electrodes one by one; the two sides of the plurality of welding areas are respectively provided with negative electrode pads, and the negative electrode pads are connected with the chip negative electrode by gold wire bonding. The plurality of channels in the array of the present invention can emit light independently, and the light emission intensity and light emission timing can be controlled.

Description

Technical Field

[0001] The invention belongs to the technical field of optoelectronic devices, and more specifically relates to a micro-integrated multi-channel luminous controllable semiconductor laser array light source. Background Art

[0002] Semiconductor lasers have the advantages of small size, high reliability, and high electro-optical conversion efficiency. They have been widely used in various fields such as scientific research, industrial processing, laser communication, laser radar, laser lighting, and national defense.

[0003] Existing semiconductor laser sources are used for applications such as laser processing, laser communication, laser ranging, or laser pumping. Generally speaking, they have relatively simple functions and lack the characteristics of micro-integration. They cannot achieve independent light emission in multiple channels with adjustable and controllable light intensity and timing.

[0004] Therefore, how to provide a miniature integrated multi-channel light-emitting controllable semiconductor laser array light source is a problem that technical personnel in this field urgently need to solve. Summary of the invention

[0005] In view of this, the present invention provides a micro-integrated multi-channel controllable semiconductor laser array light source, in which multiple channels in the array can emit light independently, and the light intensity and light timing can be controlled.

[0006] In order to achieve the above object, the present invention adopts the following technical solution:

[0007] A micro-integrated multi-channel controllable semiconductor laser array light source comprises: a laser chip and a ceramic heat sink, wherein the P surface of the laser chip is provided with a plurality of chip positive electrodes, and isolation grooves 1 are provided between the plurality of chip positive electrodes, and the N surface of the laser chip is an integral chip negative electrode; the front surface of the ceramic heat sink is provided with a plurality of welding areas, and isolation grooves 2 are provided between the plurality of welding areas, and the plurality of welding areas are respectively welded and connected with the plurality of chip positive electrodes in a one-to-one correspondence; negative electrode pads are respectively provided on both sides of the plurality of welding areas, and the negative electrode pads are connected with the chip negative electrode by gold wire bonding.

[0008] Preferably, a metal solder area is provided on the surface of the welding region, and the metal solder area is processed by electroplating or sputtering.

[0009] Preferably, after the laser positive electrodes are welded one-to-one between the plurality of welding areas and the plurality of chip positive electrodes, they are led out by welding wires or leads.

[0010] Preferably, the etching depth of the isolation trench 1 penetrates the PN junction, and the spacing between adjacent isolation trenches 1 is 0.5 mm.

[0011] Preferably, the spacing between adjacent isolation grooves 2 is 0.5 mm.

[0012] Preferably, 20 chip positive electrodes and 20 welding areas are provided.

[0013] Preferably, it further comprises a heat dissipation block, and the back side of the ceramic heat sink is welded to the heat dissipation block.

[0014] Preferably, a ceramic welding layer is provided on the back side of the ceramic heat sink, and the ceramic heat sink is welded and connected to the heat dissipation block via the ceramic welding layer.

[0015] Preferably, the heat dissipation block is provided with a fixing hole.

[0016] The beneficial effects of the present invention are:

[0017] The present invention connects the laser chip and the ceramic heat sink by welding. During the welding process, multiple chip positive electrodes correspond to multiple welding areas one by one, and isolation groove 1 of the laser chip corresponds to isolation groove 2 of the ceramic heat sink one by one, thereby realizing independent light emission of multiple channel lasers, and the light emission intensity and light emission timing can be controlled. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying creative work.

[0019] Figure 1 The accompanying drawing is a schematic structural diagram of the present invention.

[0020] Figure 2 The attached picture is Figure 1 Side view of.

[0021] Figure 3 The attached picture is Figure 1 Top view of the .

[0022] Figure 4 The accompanying drawing is a side view of the laser chip of the present invention.

[0023] Figure 5 The accompanying drawing is a top view of the laser chip of the present invention.

[0024] Figure 6 The accompanying drawing is a side view of the ceramic heat sink of the present invention.

[0025] Figure 7 The accompanying drawing is a top view of the ceramic heat sink of the present invention.

[0026] Among them, in the figure:

[0027] 1-laser chip; 11-chip positive electrode; 12-chip negative electrode; 13-isolation groove one; 2-ceramic heat sink; 21-welding area; 22-isolation groove two; 23-ceramic welding layer; 24-negative electrode pad; 3-heat sink; 31-fixing hole; 4-laser positive electrode. DETAILED DESCRIPTION

[0028] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0029] Please refer to the attached Figure 1-7 The present invention provides a micro-integrated multi-channel controllable semiconductor laser array light source, including: a laser chip 1 and a ceramic heat sink 2. The P surface of the laser chip 1 is provided with 20 chip positive electrodes 11, and the 20 chip positive electrodes 11 are provided with isolation grooves 13. The isolation grooves 13 are realized by etching during the processing of the laser chip 1. The etching depth of the isolation grooves 13 penetrates the PN junction, and the spacing between adjacent isolation grooves 13 is 0.5mm. The N surface of the laser chip 1 is an integral chip negative electrode 12; the front of the ceramic heat sink 2 is provided with 20 welding areas 21, and the 20 welding areas 21 are provided with isolation grooves 22, and the spacing between adjacent isolation grooves 22 is 0.5mm. The 20 welding areas 21 are respectively welded and connected with the 20 chip positive electrodes 11 one by one; negative electrode pads 24 are respectively provided on both sides of the 20 welding areas 21, and the negative electrode pads 24 are connected with the chip negative electrode 12 by gold wire bonding.

[0030] The semiconductor laser array light source of the present invention adopts a high-power edge-emitting single bar as the laser chip 1. The laser operating wavelength can be selected according to actual needs, and the selectable wavelengths are usually 785nm, 8XXnm series, 9XXnm series, 13XXnm series, 14XXnm and 15XXnm series. The single bar is a standard 10mm width, and the period of a single light-emitting channel is 0.5mm, with a total of 20 channels.

[0031] In this embodiment, the ceramic heat sink 2 selects an aluminum nitride ceramic sheet with higher thermal conductivity. The aluminum nitride ceramic sheet is metallized on both sides, and the surface layer welded to the laser chip 1 is covered with a copper layer of about 0.6㎜, which is divided into 20 independent welding areas 21. The surface of each welding area 21 is provided with a metal solder area, and the metal solder area is processed by electroplating or sputtering. The length direction of the metal solder area is consistent with the cavity length direction of the laser chip 1. The size of the metal solder area corresponds to the chip positive electrode 11 of the laser chip 1 one by one, and is used for sintering the ceramic heat sink 2 and the laser chip 1. The copper layer surface of the negative electrode pad 24 is electroplated with gold.

[0032] The ceramic heat sink 2 is double-sided metallized, and the surface for welding the laser chip 1 is covered with a copper layer of a certain thickness to form 20 welding areas 21. The surface of the copper layer is electroplated with gold, and then gold-tin solder is prepared in the area for welding the laser chip 1 to facilitate welding the laser chip 1. No solder is prepared in the area where the laser chip 1 is not welded, and the outer layer is still a gold layer to facilitate electrode extraction.

[0033] In this embodiment, the 20 welding areas 21 correspond to the 20 chip positive electrodes 11 one by one. The laser positive electrode 4 is led out by welding wire or lead wire. There is no gold-tin solder on the surface of the laser positive electrode 4, only an electroplated gold layer, which is convenient for subsequent welding. The negative electrode pad 24 is connected to the chip negative electrode 12 by gold wire bonding to realize the lead-out of the common negative electrode. In this way, the lead-out of the 20 chip positive electrodes 11 and the common negative electrode is completed, and the corresponding drive and control parts can be connected to realize the separate control of 20 light-emitting points, and the lasers of 20 channels can realize simultaneous or sequential work.

[0034] The present invention further includes a heat sink 3, and the back of the ceramic heat sink 2 is welded to the heat sink 3. A ceramic welding layer 23 is provided on the back of the ceramic heat sink 2, and the ceramic heat sink 2 is welded to the heat sink 3 through the ceramic welding layer 23. The heat sink 3 is provided with a fixing hole 31, and the heat sink 3 can be fastened to the heat dissipation plane through the fixing hole 31 during use.

[0035] The present invention connects the laser chip and the ceramic heat sink by welding. During the welding process, multiple chip positive electrodes correspond to multiple welding areas one by one, and the isolation groove 1 of the laser chip corresponds to the isolation groove 2 of the ceramic heat sink one by one, thereby realizing the independent light emission of multiple channel lasers, and the light emission intensity and light emission timing can be controlled. It can work under continuous current or pulse current, and the repetition frequency, pulse width, peak current and other parameters can be adjusted. One light source can realize applications such as laser lighting, laser pumping, laser ranging, friend-or-foe identification, and short-distance laser information transmission.

[0036] The patented product of the present invention has 20 light-emitting channels, each of which can be individually adjusted and individually controlled in terms of working mode and working parameters, thus realizing miniaturized integration of a light source with multiple working modes and multiple working purposes. The laser chip in the present invention is packaged in a flip-chip (p-side down) manner, which has good heat dissipation characteristics. The drive control of the semiconductor laser array light source can adopt an integrated design to reduce the volume. According to the use requirements, the array light source can be optically shaped or fiber-coupled, which is flexible and convenient to use.

[0037] The present invention can use a micro lens array or an optical system to shape and process the beam, or can use an optical system to process and couple into a certain number of optical fibers or 20 optical fibers to achieve multiple channel optical fiber output or 20 channel optical fiber output. According to application requirements, some channels can use free space output and some channels can use optical fiber output.

[0038] The present invention can realize that a part of the light-emitting channels are used for laser pumping, a part of the light-emitting channels are used for laser illumination, and a part of the light-emitting channels are used for laser information transmission. The working purpose of the array laser can be arbitrarily allocated according to the usage situation.

[0039] In this specification, each embodiment is described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the embodiments can be referred to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant parts can be referred to the method part.

[0040] The above description of the disclosed embodiments enables one skilled in the art to implement or use the present invention. Various modifications to these embodiments will be apparent to one skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but rather to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A micro-integrated multi-channel controllable semiconductor laser array light source, characterized in that: The invention comprises: a laser chip and a ceramic heat sink, wherein the P surface of the laser chip is provided with a plurality of chip positive electrodes, and an isolation groove 1 is provided between the plurality of chip positive electrodes, and the N surface of the laser chip is an integral chip negative electrode; the front surface of the ceramic heat sink is provided with a plurality of welding areas, and an isolation groove 2 is provided between the plurality of welding areas, and the plurality of welding areas are respectively welded and connected with the plurality of chip positive electrodes in a one-to-one correspondence; negative electrode pads are respectively provided on both sides of the plurality of welding areas, and the negative electrode pads are connected with the chip negative electrode by gold wire bonding; A metal solder area is provided on the surface of each welding area. The metal solder area is processed by electroplating or sputtering. The length direction of the metal solder area is consistent with the cavity length direction of the laser chip. The size of the metal solder area corresponds to the chip positive electrode of the laser chip one by one, and is used for sintering the ceramic heat sink and the laser chip. The laser positive electrodes after welding the plurality of welding areas in one-to-one correspondence with the plurality of chip positive electrodes are led out by welding wires or leads; The etching depth of the isolation groove 1 penetrates the PN junction, and the spacing between adjacent isolation grooves 1 is 0.5 mm; The spacing between adjacent isolation grooves 2 is 0.5 mm.

2. A micro-integrated multi-channel controllable semiconductor laser array light source according to claim 1, characterized in that: There are 20 chip positive electrodes and 20 welding areas.

3. The micro-integrated multi-channel controllable semiconductor laser array light source according to claim 1, characterized in that: It also includes a heat dissipation block, on which the back side of the ceramic heat sink is welded.

4. The micro-integrated multi-channel controllable semiconductor laser array light source according to claim 3, characterized in that: A ceramic welding layer is disposed on the back of the ceramic heat sink, and the ceramic heat sink is welded and connected to the heat dissipation block via the ceramic welding layer.

5. A micro-integrated multi-channel controllable semiconductor laser array light source according to claim 3 or 4, characterized in that: The heat dissipation block is provided with fixing holes.

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