Laser beam combining device, laser beam combining method, laser and laser processing system

Abstract

The invention discloses a laser beam combining device, a laser beam combining method, a laser and a laser processing system. The laser beam combining device comprises a light source, a light beam modulation assembly, a spectrum beam combining assembly and an outer cavity assembly. The light source comprises at least two semiconductor laser chips, and the at least two semiconductor laser chips output laser beams with different wavelengths; the spectrum beam combining assembly comprises at least one triangular prism, laser beams output by the light source enter the beam modulation assembly, the beam modulation assembly is used for shortening the distance between the at least two laser beams and then entering the triangular prism, and the triangular prism combines the at least two laser beams and then outputs the combined laser beams; the outer cavity assembly is used for stabilizing the wavelength of the laser beam. According to the laser beam combining device, the triangular prism made of a special material is used as a dispersion element, the glass material for the prism is localized, an additional surface microstructure is not needed, therefore, the cost is very low, meanwhile, spectrum beam combining output can be achieved through the element, and the laser brightness is multiplied.

Description

Technical Field

[0001] The present invention relates to the field of laser technology, and in particular to a laser beam combining device, a beam combining method, a laser and a laser processing system. Background Art

[0002] Blue light semiconductor lasers with a wavelength range of 400nm to 500nm have the advantages of high stability and high electro-optical efficiency, and are widely used in laser processing (such as copper and gold), medical treatment, underwater detection, lighting, display, laser pumping, etc. Blue light lasers are widely used in additive manufacturing and welding processing of copper-based and other high-infrared laser reflective materials in electric vehicle electrodes, electronic components, and aerospace fields.

[0003] Among the many indicators of lasers, the improvement of brightness can greatly improve the efficiency of laser work. The improvement of laser brightness can be achieved by combining multiple lasers. In the application of blue spectrum beam combining, most manufacturers currently use gratings or optical devices with other surface microstructures as dispersion elements. These dispersion elements are very expensive and difficult to promote and apply. Summary of the invention

[0004] An embodiment of the present invention provides a laser beam combining device, a beam combining method, a laser and a laser processing system. The laser beam combining device uses a triangular prism made of a special material as a dispersion element. The glass material used for the prism has been domestically produced and no additional surface microstructure is required, so the cost is very low. At the same time, the element can be used to achieve spectral beam combining output, thereby doubling the laser brightness.

[0005] According to one aspect of the present invention, there is provided a laser beam combining device, comprising a light source, a beam modulation component, a spectrum combining component and an external cavity component;

[0006] The light source comprises at least two semiconductor laser chips, and the at least two semiconductor laser chips output laser beams of different wavelengths;

[0007] The beam combining component includes at least one triangular prism. The laser beam output by the light source is incident on the beam modulation component. The beam modulation component is used to shorten the distance between at least two laser beams before being incident on the triangular prism. The triangular prism combines at least two laser beams and then outputs them.

[0008] The external cavity component is arranged on the optical path between the light source and the beam modulation component or on the output optical path of the spectrum combining component, and the external cavity component is used to stabilize the wavelength of the laser beam.

[0009] Optionally, the triangular prism combines at least two laser light beams based on a dispersion effect and outputs the combined beams.

[0010] Optionally, a collimating lens group is further included, wherein the collimating lens group is arranged between the light source and the light beam modulation component, and the collimating lens group is used to collimate the laser beam output by the light source and then inject it into the light beam modulation component.

[0011] Optionally, the collimating lens group includes a fast-axis collimator and a slow-axis collimator, the number of the fast-axis collimator and the slow-axis collimator is the same as the number of the semiconductor laser chips, and the laser beam output by the semiconductor laser chip is collimated by the fast-axis collimator and the slow-axis collimator in sequence and then incident on the beam modulation component.

[0012] Optionally, a polarization beam combining component is further included, and the laser beam combining device includes a first spectrum beam combining module and a second spectrum beam combining module, the first spectrum beam combining module outputs a spectrum beam combining laser in a first polarization state, and the second spectrum beam combining module outputs a spectrum beam combining laser in a second polarization state, and the polarization beam combining component combines the spectrum beam combining laser in the first polarization state and the spectrum beam combining laser in the second polarization state and then outputs the combined laser beam;

[0013] Wherein, the first spectrum combining module and the second spectrum combining module both include the light source, the light beam modulation component, the spectrum combining component and the external cavity component.

[0014] Optionally, a polarization beam combining component is further included, wherein the polarization beam combining component at least includes a first polarization beam combining mirror and a second polarization beam combining mirror;

[0015] The light source at least comprises a first semiconductor laser chip, a second semiconductor laser chip, a third semiconductor laser chip and a fourth semiconductor laser chip, the laser beam output by the first semiconductor laser chip and the laser beam output by the second semiconductor laser chip are combined by the first polarization beam combiner and then output to the beam modulation component, the laser beam output by the third semiconductor laser chip and the laser beam output by the fourth semiconductor laser chip are combined by the second polarization beam combiner and then output to the beam modulation component;

[0016] Among them, the first semiconductor laser chip outputs a laser beam of a first polarization state and a first wavelength, the second semiconductor laser chip outputs a laser beam of a second polarization state and the first wavelength, the third semiconductor laser chip outputs a laser beam of the first polarization state and a second wavelength, and the fourth semiconductor laser chip outputs a laser beam of the second polarization state and the second wavelength.

[0017] Optionally, the light source includes a plurality of blue light semiconductor laser chips that output different wavelengths, and the external cavity component is used to lock the wavelengths of output light beams of the blue light semiconductor laser chips that output different wavelengths, and the wavelength difference between two adjacent wavelengths of the blue light semiconductor laser chips is in the nanometer range.

[0018] Optionally, the beam combining assembly includes a triangular prism group formed by at least two triangular prisms.

[0019] Optionally, the beam modulation component includes a reflector or a Fourier lens.

[0020] Optionally, the external cavity component includes a semi-transparent and semi-reflective mirror, which is arranged on the output light path of the spectrum combining component, or the external cavity component includes a volume Bragg grating, which is arranged on the light path between the light source and the beam modulation component.

[0021] According to another aspect of the present invention, a laser beam combining method is provided, which is applicable to the above-mentioned laser beam combining device, and the laser beam combining method comprises:

[0022] S1. Arrange the light source, the beam modulation component, the spectrum combining component and the external cavity component in sequence, wherein at least two semiconductor laser chips are arranged at a preset interval;

[0023] S2, adjusting the beam modulation component to shorten the distance between at least two laser beams and then incident on the triangular prism, and the triangular prism combines the at least two laser beams based on the dispersion effect and then outputs the combined beams;

[0024] S3. Adjust the external cavity component to stabilize the wavelength of the laser beam.

[0025] Optionally, the laser beam combining device further includes a polarization beam combining component, a first spectrum beam combining module, and a second spectrum beam combining module, and the laser beam combining method further includes:

[0026] S4, repeatedly executing S1 to S3 to form the first spectrum combining module and the second spectrum combining module, wherein the first spectrum combining module outputs a spectrum combining laser in a first polarization state, and the second spectrum combining module outputs a spectrum combining laser in a second polarization state;

[0027] S5. The polarization beam combining component is arranged on the output optical paths of the first spectrum beam combining module and the second spectrum beam combining module, and the polarization beam combining component combines the spectrum beam combining laser in the first polarization state and the spectrum beam combining laser in the second polarization state and outputs the combined laser beams.

[0028] Optionally, the laser beam combining device further includes a polarization beam combining component, the polarization beam combining component includes at least a first polarization beam combining mirror and a second polarization beam combining mirror, and the light source includes at least a first semiconductor laser chip, a second semiconductor laser chip, a third semiconductor laser chip and a fourth semiconductor laser chip; before S1, it also includes:

[0029] S0, setting the first polarization beam combiner on the output optical paths of the first semiconductor laser chip and the second semiconductor laser chip, and setting the second polarization beam combiner on the output optical paths of the third semiconductor laser chip and the fourth semiconductor laser chip;

[0030] Among them, the laser beam output by the first semiconductor laser chip and the laser beam output by the second semiconductor laser chip are combined by the first polarization beam combiner and then output to the beam modulation component, the laser beam output by the third semiconductor laser chip and the laser beam output by the fourth semiconductor laser chip are combined by the second polarization beam combiner and then output to the beam modulation component, the first semiconductor laser chip outputs a laser beam with a first polarization state and a first wavelength, the second semiconductor laser chip outputs a laser beam with a second polarization state and a first wavelength, the third semiconductor laser chip outputs a laser beam with a first polarization state and a second wavelength, and the fourth semiconductor laser chip outputs a laser beam with a second polarization state and a second wavelength.

[0031] According to another aspect of the present invention, there is provided a laser including the above-mentioned laser beam combining device.

[0032] According to yet another aspect of the present invention, a laser processing system is provided, comprising the above-mentioned laser.

[0033] The laser beam combining device provided by the embodiment of the present invention includes a light source, a beam modulation component, a spectrum combining component and an external cavity component; wherein the light source includes at least two semiconductor laser chips that output laser beams of different wavelengths, the spectrum combining component includes at least one triangular prism, and the external cavity component is arranged on the optical path between the light source and the beam modulation component or on the output optical path of the spectrum combining component. The laser beam output by the light source is incident on the beam modulation component, and the distance between at least two laser beams is shortened by the beam modulation component before being incident on the triangular prism, and the triangular prism combines at least two laser beams based on the dispersion effect and then outputs them, wherein the optical path of the triangular prism combining is the reverse optical path of the triangular prism dispersion optical path; the wavelength of the laser beam is stabilized by the external cavity component to achieve narrow spectrum combining, which can significantly reduce the cost compared with the prior art using gratings or other optical devices with surface microstructures as dispersion elements, and is conducive to popularization and application.

[0034] It should be understood that the contents described in this section are not intended to identify the key or important features of the embodiments of the present invention, nor are they intended to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0036] Figure 1 A structural block diagram of a laser beam combining device provided by an embodiment of the present invention;

[0037] Figure 2 A structural block diagram of another laser beam combining device provided by an embodiment of the present invention;

[0038] Figure 3 A schematic diagram of an optical path of a spectrum combining principle provided by an embodiment of the present invention;

[0039] Figure 4 A structural block diagram of another laser beam combining device provided in an embodiment of the present invention;

[0040] Figure 5 A schematic diagram of the structure of a laser beam combining device provided in an embodiment of the present invention;

[0041] Figure 6 A schematic diagram of the structure of another laser beam combining device provided in an embodiment of the present invention;

[0042] Figure 7 A schematic diagram of the structure of another laser beam combining device provided in an embodiment of the present invention;

[0043] Figure 8 A structural block diagram of another laser beam combining device provided in an embodiment of the present invention;

[0044] Fig. 9 A schematic diagram of a process of a laser beam combining method provided by an embodiment of the present invention;

[0045] Fig.10 A schematic diagram of a process flow of another laser beam combining method provided by an embodiment of the present invention;

[0046] Fig.11 A schematic flow chart of another laser beam combining method provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0047] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0048] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0049] The existing laser beam combining methods mainly include spatial beam combining, polarization beam combining, spectral beam combining, etc. Among them, spatial beam combining and polarization beam combining technologies are mature and the most common. Polarization beam combining can double the original brightness. Applying spectral beam combining first and then polarization beam combining can double the laser brightness again. However, in the existing technology, spectral beam combining mainly uses gratings or optical devices with other surface microstructures as dispersion elements, and these dispersion elements are very expensive.

[0050] In order to solve the above problems, an embodiment of the present invention provides a laser beam combining device, which uses a triangular prism made of a special material as a dispersion element. The glass material used for this prism has been domestically produced and no additional surface microstructure is required, so the cost is very low. At the same time, this element can be used to achieve spectral beam combining output, thereby doubling the laser brightness.

[0051] For example, Figure 1 A structural block diagram of a laser beam combining device provided in an embodiment of the present invention, Figure 2 A structural block diagram of another laser beam combining device provided in an embodiment of the present invention, referring to Figure 1 and Figure 2 The laser beam combining device comprises a light source 10, a beam modulation component 20, a spectrum combining component 30 and an external cavity component 40; the light source 10 comprises at least two semiconductor laser chips ( Figure 1 and Figure 2Two semiconductor laser chips 11 and 12 are schematically shown in the figure, which is not a limitation of the embodiment of the present invention. At least two semiconductor laser chips output laser beams of different wavelengths. In a specific implementation, the light source 10 may include a plurality of laser beams with a wavelength difference of a fixed value, and the wavelengths are γ1, γ2, γ3, ... n Blue laser, optionally, the light source 10 includes a plurality of blue light semiconductor laser chips that output different wavelengths, and the external cavity component 40 is used to lock the wavelengths of output light beams of the blue light semiconductor laser chips that output different wavelengths, and the wavelength difference between two adjacent wavelengths of the blue light semiconductor laser chips is in the nanometer range, that is, the wavelength difference between two adjacent wavelengths can be as low as 1nm. For example, in a certain embodiment, the light source 10 includes ten blue light semiconductor laser chips with a wavelength interval of 1nm, and their output wavelengths are 446nm, 447nm, 448nm, 449nm, 450nm, 451nm, 452nm, 453nm and 454nm respectively. The specific implementation can be designed according to actual conditions.

[0052] The beam combining assembly 30 includes at least one triangular prism ( Figure 1 and Figure 2 The laser beam output by the light source 10 is incident on the beam modulation component 20. The beam modulation component 20 is used to shorten the distance between at least two laser beams and then be incident on the triangular prism. The triangular prism combines at least two laser beams based on the dispersion effect and then outputs the combined beams. The external cavity component 40 is arranged on the optical path between the light source 10 and the beam modulation component 20 (refer to Figure 1 ) or arranged in the output optical path of the spectrum combining component 30 (reference Figure 2 ), the external cavity assembly 40 is used to stabilize the wavelength of the laser beam.

[0053] Figure 3 A schematic diagram of an optical path of a spectrum combining principle provided by an embodiment of the present invention, referring to Figure 3, taking the combination of three laser beams as an example, before the laser beam is incident on the beam modulation component 20, when the distance from the triangular prism 31 is L, the distance between two adjacent laser beams is d, and the beam modulation component 20 has the function of converging the beams, converging the three laser beams onto the triangular prism 31. In specific implementation, optionally, the beam modulation component 20 includes a reflector or a Fourier lens, for example, a reflector is set on the optical path of the upper beam and the lower beam, or a Fourier lens is set. It can be understood that when a beam of multi-wavelength laser is incident from the hypotenuse on the right side of the triangular prism 31, due to the dispersion effect, the laser will be dispersed when it is emitted from the right angle side on the left side of the triangular prism 31, and lasers of different wavelengths will have a certain distance. According to the reversible principle of the optical path, the directions of laser beams of different wavelengths are adjusted by the beam modulation component 20, so that the distance when the laser beams of each wavelength are incident on the right angle side on the left side of the triangular prism 31 is exactly equal to the distance of light separation when the light is dispersed, and a combined beam will be emitted from the hypotenuse on the right side of the triangular prism 31. According to actual process conditions, semiconductor laser chips can usually be arranged at a distance of about 0.4nm, that is, d=0.4nm. Based on this, the distance L for placing the beam modulation component can be calculated. In an embodiment of the present invention, by comprehensively considering factors such as the wavelength of the laser beam, the dispersion of the triangular prism, and the distance of laser beams of different wavelengths, the spectrum combination of multiple laser beams with different wavelengths is achieved. In other embodiments, in order to improve the beam combining effect, optionally, the spectrum combining component 40 includes a triangular prism group formed by at least two triangular prisms, which can be designed according to actual conditions during specific implementation.

[0054] exist Figure 1 In the embodiment shown, the external cavity assembly 40 may optionally include a semi-transparent and semi-reflective mirror, which is disposed on the output light path of the spectrum combining assembly 30, or on the Figure 2 In the illustrated embodiment, the external cavity component 40 may include a volume Bragg grating (VBG), which is disposed on the optical path between the light source 10 and the beam modulation component 20. Both the semi-transparent and semi-reflective mirrors and the VBG have the functions of wave locking and wave stabilization, which can prevent the wavelength from drifting and causing the failure of beam combining when the operating temperature, driving current, etc. change. In addition, the color resolution can be increased by designing a triangular prism group, and the wavelength can be strictly controlled by using external cavity technology. The two together can achieve a narrow spectrum beam combining effect, which can improve the system resolution, and the resolution can reach 1nm, which can replace the grating and reduce the cost.

[0055] Figure 4 A structural block diagram of another laser beam combining device provided in an embodiment of the present invention is shown in FIG. Figure 4Optionally, the laser beam combining device provided in this embodiment also includes a collimating lens group 50, which is arranged between the light source 10 and the beam modulation component 20, and the collimating lens group 50 is used to collimate the laser beam output by the light source 10 and then incident on the beam modulation component 20.

[0056] Optionally, the collimating lens group 50 includes a fast axis collimating lens and a slow axis collimating lens ( Figure 4 (not shown), the number of fast axis collimators and slow axis collimators is the same as the number of semiconductor laser chips. The laser beam output by the semiconductor laser chip is collimated by the fast axis collimator and the slow axis collimator in sequence and then incident on the beam modulation component 20.

[0057] Among them, due to the waveguide structure of the semiconductor laser chip, the laser emitted by the chip is usually elliptical, with a relatively large divergence angle in the vertical direction and good beam quality, which is called the "fast axis". The divergence angle in the horizontal direction is relatively small, and the beam quality is poor, which is called the "slow axis". In order to obtain a good coupling effect, the light beams in two directions need to be collimated separately, and the corresponding components are called fast axis collimators (FAC) and slow axis collimators (SAC).

[0058] For example, Figure 5 A schematic diagram of the structure of a laser beam combining device provided in an embodiment of the present invention, referring to Figure 5 The collimating lens group 50 includes a fast-axis collimating lens 51 and a slow-axis collimating lens 52 , the beam modulation component 20 includes a reflector 21 and a reflector 22 , the beam combining component 30 includes a triangular prism 31 , and the external cavity component 40 includes a semi-transparent and semi-reflective mirror 41 . Figure 5 Also shown is a receiving screen 60 for receiving the combined light beam for monitoring.

[0059] in, Figure 5 It is shown in the figure that the light source 10 includes three semiconductor laser chips. Since the output wavelengths of the three semiconductor laser chips are different, the distances between the semi-transparent and semi-reflective mirrors 41 and the three semiconductor laser chips are different to form resonant cavities at different distances, thereby stabilizing different wavelengths. The three semiconductor laser chips are used as three channels for wavelength testing. Table 1 is a numerical comparison of channels 1-3 before and after wavelength locking. It can be seen from Table 1 that the external cavity component 40 has the function of locking the wavelength. Only by strictly locking the wavelength through the external cavity component 40, combined with the dispersion parameters of the triangular prism and the beam distance, can narrow spectrum beam combining be achieved.

[0060] Table 1 Comparison of values ​​of channels 1-3 before and after wavelength locking

[0061] Channel 1 Channel 2 Channel 3 Initial Value 446.5 450.6 453.6 After locking 447.1 451.4 454.4

[0062] For example, Figure 6 A schematic diagram of the structure of another laser beam combining device provided in an embodiment of the present invention, Figure 6 Five semiconductor laser chips are shown in FIG. 4 , wherein the external cavity component includes a VBG 42 , and the beam combining component includes a dispersion prism group formed by a plurality of triangular prisms.

[0063] Understandably, Figure 5 In the embodiment, since the external cavity assembly 40 is formed by a semi-transparent and semi-reflective mirror 41, different cavity lengths are required to achieve different wavelength outputs, so different semiconductor laser chips are arranged with a certain offset, and the VBG is a wavelength device, so the semiconductor laser chips can be arranged in parallel.

[0064] Based on the spectrum beam combining method used in the above-mentioned embodiment, polarization beam combining can be further combined to improve the laser intensity. Figure 7 A schematic diagram of the structure of another laser beam combining device provided in an embodiment of the present invention, referring to Figure 7 Optionally, the laser beam combining device further includes a polarization beam combining component 70, the laser beam combining device includes a first spectrum beam combining module 100 and a second spectrum beam combining module 200, the first spectrum beam combining module 100 outputs a spectrum beam combining laser of a first polarization state, the second spectrum beam combining module 200 outputs a spectrum beam combining laser of a second polarization state, and the polarization beam combining component 70 combines the spectrum beam combining laser of the first polarization state and the spectrum beam combining laser of the second polarization state and then outputs the combined laser beam; wherein the first spectrum beam combining module 100 and the second spectrum beam combining module 200 both include a light source, a beam modulation component, a spectrum beam combining component and an external cavity component ( Figure 7 not shown).

[0065] It can be understood that in this embodiment, laser beams of different wavelengths are first spectrally combined, and then the spectrally combined light is polarized. The spectrally combined light beam in the first polarization state can be horizontally polarized (p) light, and the spectrally combined light beam in the second polarization state can be vertically polarized (s) light, or the spectrally combined light beam in the first polarization state can be s light, and the spectrally combined light beam in the second polarization state can be p light, and the polarization combining component 70 can be a polarization combining prism PBC. In a specific implementation, in order to reduce the volume, a reflector 80 can also be set in the optical path, and the optical path can be designed according to actual conditions in a specific implementation.

[0066] In another embodiment, light beams of the same wavelength may be polarization combined first and then spectrally combined. Figure 8 A structural block diagram of another laser beam combining device provided in an embodiment of the present invention is shown in FIG. Figure 8Optionally, the laser beam combining device further includes a polarization beam combining component 70, and the polarization beam combining component 70 includes at least a first polarization beam combining mirror 71 and a second polarization beam combining mirror 72; the light source 10 includes at least a first semiconductor laser chip 101, a second semiconductor laser chip 102, a third semiconductor laser chip 103 and a fourth semiconductor laser chip 104, the laser beam output by the first semiconductor laser chip 101 and the laser beam output by the second semiconductor laser chip 102 are combined by the first polarization beam combining mirror 71 and then output to the beam modulation component 20, the laser beam output by the third semiconductor laser chip 103 and the laser beam output by the fourth semiconductor laser chip 104 are combined by the second polarization beam combining mirror 72 and then output to the beam modulation component 20; wherein the first semiconductor laser chip 101 outputs a laser beam with a first polarization state and a first wavelength, the second semiconductor laser chip 102 outputs a laser beam with a second polarization state and a first wavelength, the third semiconductor laser chip 103 outputs a laser beam with a first polarization state and a second wavelength, and the fourth semiconductor laser chip 104 outputs a laser beam with a second polarization state and a second wavelength.

[0067] It can be understood that the difference between this embodiment and the previous embodiment is that polarization beam combining is performed first and then spectral beam combining. Other principles are similar to the previous embodiments and will not be described in detail here.

[0068] Based on the same inventive concept, an embodiment of the present invention further provides a laser beam combining method, which is applicable to the laser beam combining device provided in the above embodiment. Fig. 9 A schematic diagram of a laser beam combining method according to an embodiment of the present invention is provided. Fig. 9 , the laser beam combining method comprises:

[0069] S1. Arrange a light source, a beam modulation component, a spectrum combining component and an external cavity component in sequence, wherein at least two semiconductor laser chips are arranged at a preset interval.

[0070] In specific implementation, the external cavity component can select a semi-transparent and semi-reflective mirror and be arranged on the output optical path of the spectrum combining component, or the external cavity component can select a VBG and be arranged on the optical path of the light source and the beam modulation component.

[0071] S2. Adjust the beam modulation component to shorten the distance between at least two laser beams and then input them into the triangular prism. The triangular prism combines the at least two laser beams based on the dispersion effect and then outputs them.

[0072] The laser beam combining device may further include a collimating lens group, the collimating lens group including FAC and SAC. In a certain embodiment, referring to Figure 5, N (N≥2) semiconductor laser chips can be arranged along the fast axis with an interval of 0.4mm, and FAC and SAC are done well. A reflector is added after SAC to adjust the central light so that its directivity has no tilt along the fast axis and the slow axis. This light is the indicator light. The spectrum information of the receiving screen is monitored by a spectrometer, and the triangular prism is set in the light path at a distance L.

[0073] S3. Adjust the external cavity components to stabilize the wavelength of the laser beam.

[0074] Place the semi-transparent and semi-reflective mirror behind the triangular prism and adjust its three spatial angles so that the semi-transparent and semi-reflective mirror becomes the external cavity of the semiconductor laser to stabilize the wavelength. In another embodiment, a VBG can be inserted between the SAC and the triangular prism so that the laser emitted by the semiconductor laser chip is locked at γ1, γ2, γ3, ... γ n , and then incident on the triangular prism.

[0075] The above embodiment is the basic principle of spectrum beam combining. In another embodiment, polarization beam combining can be combined to achieve higher power laser output. Optionally, the laser beam combining device further includes a polarization beam combining component, a first spectrum beam combining module and a second spectrum beam combining module. Fig.10 A schematic diagram of another laser beam combining method provided by an embodiment of the present invention, referring to Fig.10 , the laser beam combining method comprises:

[0076] S1. Arrange a light source, a beam modulation component, a spectrum combining component and an external cavity component in sequence, wherein at least two semiconductor laser chips are arranged at a preset interval.

[0077] S2. Adjust the beam modulation component to shorten the distance between at least two laser beams and then input them into the triangular prism. The triangular prism combines the at least two laser beams based on the dispersion effect and then outputs them.

[0078] S3. Adjust the external cavity components to stabilize the wavelength of the laser beam.

[0079] S4, repeatedly executing S1 to S3 to form a first spectrum combining module and a second spectrum combining module, wherein the first spectrum combining module outputs a spectrum combining laser in a first polarization state, and the second spectrum combining module outputs a spectrum combining laser in a second polarization state.

[0080] S5. The polarization beam combining component is arranged on the output optical path of the first spectrum beam combining module and the second spectrum beam combining module. The polarization beam combining component combines the spectrum beam combining laser in the first polarization state and the spectrum beam combining laser in the second polarization state and outputs the combined laser beams.

[0081] Understandably, Fig.10 The method shown corresponds to Figure 7 The embodiment of first spectral beam combining and then polarization beam combining will not be described in detail here.

[0082] In another embodiment, polarization beam combining may be performed first and then spectral beam combining. Optionally, the laser beam combining device further includes a polarization beam combining component, the polarization beam combining component includes at least a first polarization beam combining mirror and a second polarization beam combining mirror, and the light source includes at least a first semiconductor laser chip, a second semiconductor laser chip, a third semiconductor laser chip and a fourth semiconductor laser chip. Fig.11 A schematic diagram of a process flow of another laser beam combining method provided by an embodiment of the present invention, referring to Fig.11 , the laser beam combining method comprises:

[0083] S0. Arrange the first polarization beam combiner on the output light paths of the first semiconductor laser chip and the second semiconductor laser chip, and arrange the second polarization beam combiner on the output light paths of the third semiconductor laser chip and the fourth semiconductor laser chip.

[0084] Among them, the laser beam output by the first semiconductor laser chip and the laser beam output by the second semiconductor laser chip are combined by the first polarization beam combiner and then output to the beam modulation component, the laser beam output by the third semiconductor laser chip and the laser beam output by the fourth semiconductor laser chip are combined by the second polarization beam combiner and then output to the beam modulation component, the first semiconductor laser chip outputs a laser beam with a first polarization state and a first wavelength, the second semiconductor laser chip outputs a laser beam with a second polarization state and a first wavelength, the third semiconductor laser chip outputs a laser beam with a first polarization state and a second wavelength, and the fourth semiconductor laser chip outputs a laser beam with a second polarization state and a second wavelength.

[0085] S1. Arrange a light source, a beam modulation component, a spectrum combining component and an external cavity component in sequence, wherein at least two semiconductor laser chips are arranged at a preset interval.

[0086] S2. Adjust the beam modulation component to shorten the distance between at least two laser beams and then input them into the triangular prism. The triangular prism combines the at least two laser beams based on the dispersion effect and then outputs them.

[0087] S3. Adjust the external cavity components to stabilize the wavelength of the laser beam.

[0088] Understandably, Fig.11 The method shown corresponds to Figure 8 The embodiment of first polarization beam combining and then spectral beam combining will not be described in detail here.

[0089] Based on the same inventive concept, an embodiment of the present invention further provides a laser, including any one of the laser beam combining devices provided in the above embodiments.

[0090] Since the laser provided in the embodiment of the present invention includes any one of the laser beam combining devices provided in the above embodiments, and has the same or corresponding technical effects as the laser beam combining device, it will not be described in detail here.

[0091] Based on the same inventive concept, an embodiment of the present invention further provides a laser processing system, including the laser provided by the above embodiment.

[0092] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A laser beam combining device, characterized in that: It includes a light source, a beam modulation component, a spectrum combining component and an external cavity component; The light source comprises at least two semiconductor laser chips, and the at least two semiconductor laser chips output laser beams of different wavelengths; The beam combining component includes at least one triangular prism. The laser beam output by the light source is incident on the beam modulation component. The beam modulation component is used to shorten the distance between at least two laser beams before being incident on the triangular prism. The triangular prism combines at least two laser beams and then outputs them. The external cavity component is arranged on the optical path between the light source and the beam modulation component or on the output optical path of the spectrum combining component, and the external cavity component is used to stabilize the wavelength of the laser beam.

2. The laser beam combining device according to claim 1, characterized in that: The triangular prism combines at least two laser beams based on the dispersion effect and then outputs the combined beams.

3. The laser beam combining device according to claim 1, characterized in that: It also includes a collimating lens group, which is arranged between the light source and the light beam modulation component. The collimating lens group is used to collimate the laser light beam output by the light source and then make it incident on the light beam modulation component.

4. The laser beam combining device according to claim 3, characterized in that: The collimating lens group includes a fast-axis collimating lens and a slow-axis collimating lens. The number of the fast-axis collimating lens and the slow-axis collimating lens is the same as the number of the semiconductor laser chips. The laser beam output by the semiconductor laser chip is collimated by the fast-axis collimating lens and the slow-axis collimating lens in sequence and then incident on the beam modulation component.

5. The laser beam combining device according to claim 1, characterized in that: It also includes a polarization beam combining component, the laser beam combining device includes a first spectrum beam combining module and a second spectrum beam combining module, the first spectrum beam combining module outputs a spectrum beam combining laser in a first polarization state, the second spectrum beam combining module outputs a spectrum beam combining laser in a second polarization state, and the polarization beam combining component combines the spectrum beam combining laser in the first polarization state and the spectrum beam combining laser in the second polarization state and then outputs the combined laser beam; Wherein, the first spectrum combining module and the second spectrum combining module both include the light source, the light beam modulation component, the spectrum combining component and the external cavity component.

6. The laser beam combining device according to claim 1, characterized in that: It also includes a polarization beam combining component, which includes at least a first polarization beam combining mirror and a second polarization beam combining mirror; The light source at least comprises a first semiconductor laser chip, a second semiconductor laser chip, a third semiconductor laser chip and a fourth semiconductor laser chip, the laser beam output by the first semiconductor laser chip and the laser beam output by the second semiconductor laser chip are combined by the first polarization beam combiner and then output to the beam modulation component, the laser beam output by the third semiconductor laser chip and the laser beam output by the fourth semiconductor laser chip are combined by the second polarization beam combiner and then output to the beam modulation component; Among them, the first semiconductor laser chip outputs a laser beam of a first polarization state and a first wavelength, the second semiconductor laser chip outputs a laser beam of a second polarization state and the first wavelength, the third semiconductor laser chip outputs a laser beam of the first polarization state and a second wavelength, and the fourth semiconductor laser chip outputs a laser beam of the second polarization state and the second wavelength.

7. The laser beam combining device according to claim 1, characterized in that: The light source comprises a plurality of blue light semiconductor laser chips outputting different wavelengths. The external cavity component is used to lock the wavelengths of output light beams of the blue light semiconductor laser chips outputting different wavelengths. The wavelength difference between two adjacent wavelengths of the blue light semiconductor laser chips is in the nanometer order.

8. The laser beam combining device according to claim 1, characterized in that: The beam combining assembly includes a triangular prism group formed by at least two triangular prisms.

9. The laser beam combining device according to claim 1, characterized in that: The beam modulation component includes a reflector or a Fourier lens.

10. The laser beam combining device according to claim 1, characterized in that: The external cavity component includes a semi-transparent and semi-reflective mirror, which is arranged on the output optical path of the spectrum combining component, or the external cavity component includes a volume Bragg grating, which is arranged on the optical path between the light source and the beam modulation component.

11. A laser beam combining method, characterized in that: Applicable to the laser beam combining device according to any one of claims 1 to 10, the laser beam combining method comprising: S1. Arrange the light source, the beam modulation component, the spectrum combining component and the external cavity component in sequence, wherein at least two semiconductor laser chips are arranged at a preset interval; S2, adjusting the beam modulation component to shorten the distance between at least two laser beams and then incident on the triangular prism, and the triangular prism combines the at least two laser beams based on the dispersion effect and then outputs the combined beams; S3. Adjust the external cavity component to stabilize the wavelength of the laser beam.

12. The laser beam combining method according to claim 11, characterized in that: The laser beam combining device further includes a polarization beam combining component, a first spectrum beam combining module and a second spectrum beam combining module, and the laser beam combining method further includes: S4, repeatedly executing S1 to S3 to form the first spectrum combining module and the second spectrum combining module, wherein the first spectrum combining module outputs a spectrum combining laser in a first polarization state, and the second spectrum combining module outputs a spectrum combining laser in a second polarization state; S5. The polarization beam combining component is arranged on the output optical path of the first spectrum beam combining module and the second spectrum beam combining module, and the polarization beam combining component combines the spectrum beam combining laser in the first polarization state and the spectrum beam combining laser in the second polarization state and outputs the combined laser beams.

13. The laser beam combining method according to claim 11, characterized in that: The laser beam combining device further includes a polarization beam combining component, the polarization beam combining component includes at least a first polarization beam combining mirror and a second polarization beam combining mirror, the light source includes at least a first semiconductor laser chip, a second semiconductor laser chip, a third semiconductor laser chip and a fourth semiconductor laser chip; before S1, it also includes: S0, setting the first polarization beam combiner on the output optical paths of the first semiconductor laser chip and the second semiconductor laser chip, and setting the second polarization beam combiner on the output optical paths of the third semiconductor laser chip and the fourth semiconductor laser chip; Among them, the laser beam output by the first semiconductor laser chip and the laser beam output by the second semiconductor laser chip are combined by the first polarization beam combiner and then output to the beam modulation component, the laser beam output by the third semiconductor laser chip and the laser beam output by the fourth semiconductor laser chip are combined by the second polarization beam combiner and then output to the beam modulation component, the first semiconductor laser chip outputs a laser beam with a first polarization state and a first wavelength, the second semiconductor laser chip outputs a laser beam with a second polarization state and a first wavelength, the third semiconductor laser chip outputs a laser beam with a first polarization state and a second wavelength, and the fourth semiconductor laser chip outputs a laser beam with a second polarization state and a second wavelength.

14. A laser, characterized in that: It comprises the laser beam combining device as described in any one of claims 1 to 10.

15. A laser processing system, characterized in that: Comprising the laser as claimed in claim 14.

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