Semiconductor device package

Abstract

A semiconductor device package includes a substrate, a heat dissipating structure disposed on the substrate, and a first optical module disposed on the heat dissipating structure. The first optical module includes a housing, an optical assembly disposed on the housing, and a light emitting device disposed in the housing and capable of emitting light toward the first optical assembly.

Description

Technical Field

[0001] More particularly, the present invention relates to a semiconductor device package and a semiconductor device package having a plurality of modules. Background Art

[0002] Semiconductor device packages may include several integrated modules, such as optical modules, power modules, and communication modules. These modules may require relatively high precision to assemble to ensure the performance of the semiconductor device package. However, some methods used to manufacture the aforementioned semiconductor device packages can be relatively costly and large. Summary of the Invention

[0003] According to some example embodiments of the present invention, a semiconductor device package includes a substrate, a heat dissipation structure disposed on the substrate, and a first optical module disposed on the heat dissipation structure. The heat dissipation structure includes a housing, an optical component disposed on the housing, and a light emitting device disposed in the housing and capable of emitting light toward the first optical component.

[0004] According to some example embodiments of the present invention, a semiconductor device package includes a first substrate, a first optical module disposed on the first substrate, and a second optical module disposed on one side of the first optical module. The first optical module includes a housing, a first optical module disposed on the housing, and a light-emitting device disposed in the housing and emitting light toward the first optical module. The second optical module includes a second substrate disposed on the first substrate, a detector module disposed on the second substrate, and a first cover disposed on the detector module and having an extension portion in direct contact with the detector module. BRIEF DESCRIPTION OF THE DRAWINGS

[0005] When read in conjunction with the accompanying drawings, aspects of the present invention will be readily understood from the following detailed description. It should be noted that the various features may not be drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or decreased for clarity of discussion.

[0006] Figure 1 is a cross-sectional view of a semiconductor device package according to some embodiments of the present invention.

[0007] Figure 2 is a cross-sectional view of a semiconductor device package according to some embodiments of the present invention.

[0008] Figure 2A is a cross-sectional view of a semiconductor device package according to some embodiments of the present invention.

[0009] Figure 3 is a cross-sectional view of a semiconductor device package according to some embodiments of the present invention.

[0010] Figure 3A is a cross-sectional view of a semiconductor device package according to some embodiments of the present invention.

[0011] Figure 4 is a cross-sectional view of a semiconductor device package according to some embodiments of the present invention.

[0012] Figure 4A is a cross-sectional view of a semiconductor device package according to some embodiments of the present invention.

[0013] Figure 5 is a cross-sectional view of a semiconductor device package according to a comparative embodiment of the present invention. DETAILED DESCRIPTION

[0014] The following disclosure provides many different embodiments or examples for implementing the different features of the provided subject matter. Specific examples of components and arrangements are described below. Of course, these components and arrangements are merely examples and are not intended to be limiting. In the present invention, references in the following description to a first feature being formed above or on a second feature may include embodiments in which the first feature and the second feature are formed in direct contact, and may also include embodiments in which additional features may be formed between the first feature and the second feature so that the first feature and the second feature may not be in direct contact. In addition, the present invention may repeat reference numerals and / or letters in various examples. This repetition is for the purpose of simplicity and clarity and does not, in itself, specify the relationship between the various embodiments and / or configurations discussed.

[0015] The following describes embodiments of the present invention in detail. However, it should be understood that the present invention provides many applicable concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative and do not limit the scope of the present invention.

[0016] Figure 1 is a cross-sectional view of a semiconductor device package according to some embodiments of the present invention.

[0017] refer to Figure 1 The semiconductor device package 1 may include a substrate 10 , a semiconductor device 11 , a substrate 12 , an optical module 13 , another optical module 14 , and a reinforcement 16 .

[0018] The substrate 10 may include some conductive elements such as, but not limited to, conductive traces, pads, vias ( Figure 1 The substrate 10 may include a redistribution structure ( Figure 1 The substrate 10 may include a circuit system ( Figure 1(not shown). Substrate 10 may include an insulating material or a dielectric material. Substrate 10 may include a core or a relatively hard material. Substrate 10 may include a flexible or relatively soft material. Substrate 10 may include a surface 101 and another surface 102 opposite to surface 101.

[0019] The substrate 10 may include an insulating or dielectric material, which may include a resin such as bismaleimide triazine resin (BT). The substrate 10 may include an insulating or dielectric material, which may include glass fibers such as woven glass or pre-impregnated composite fibers (prepreg). The substrate 10 may include an insulating or dielectric material, which may include particles such as SiO particles. The substrate 10 may include an insulating or dielectric material, which may include an epoxy resin. The substrate 10 may include an insulating or dielectric material, which may include a molding compound or an encapsulation material.

[0020] The semiconductor device 11 may be disposed on the reinforcement 16. The semiconductor device 11 may be disposed in the substrate 10. The semiconductor device 11 may be embedded in the substrate 10. Figure 1 (not shown) may be formed in the substrate 10 to accommodate or receive the semiconductor device 11. The substrate 10 may define an opening ( Figure 1 The substrate 10 may define a through hole ( Figure 1 (not shown), the through hole penetrates the substrate 10 to accommodate or receive the semiconductor device 11. Figure 1 Although not shown, the substrate 10 may define a groove instead of a through opening to accommodate or house the semiconductor device 11 .

[0021] The semiconductor device 11 may include, for example but not limited to, a processor, a controller, a microcontroller (MCU), or other electronic components. The semiconductor device 11 may be electrically connected to the substrate 10. The semiconductor device 11 may be electrically connected to the substrate 10 via conductive wires W. The semiconductor device 11 may include a wire-bonded semiconductor die or chip. According to some other embodiments of the present invention, the semiconductor device 11 may include a flip-chip semiconductor die or chip.

[0022] The stiffener 16 may include a relatively hard material to reinforce the semiconductor device package 1. The stiffener 16 may be disposed on the surface 102 of the substrate 10. The stiffener 16 may be attached to the surface 102 of the substrate 10.

[0023] The substrate 12 may include an insulating or dielectric material 121 , a conductive structure 122 , and a conductive structure 123 .

[0024] The insulating or dielectric material 121 may include a resin (e.g., bismaleimide triazine resin (BT)). The insulating or dielectric material 121 may include glass fibers (e.g., woven glass, pre-impregnated composite fibers (prepreg)). The insulating or dielectric material 121 may include particles (e.g., SiO2 particles). The insulating or dielectric material 121 may include an epoxy resin. The insulating or dielectric material 121 may include a molding compound or an encapsulating material.

[0025] The substrate 12 may be disposed on the substrate 10. The substrate 12 may be disposed on the surface 101 of the substrate 10. The substrate 12 may be attached to the surface 101 of the substrate 10. The substrate 12 may be disposed on the semiconductor device 11. The substrate 12 may cover the semiconductor device 11. The substrate 12 may have a groove for accommodating or receiving the semiconductor device 11. The substrate 12 may have a groove for accommodating or receiving the conductive wire W.

[0026] The conductive structure 122 and the conductive structure 123 may be disposed in the insulating or dielectric material 121. The conductive structure 122 and the conductive structure 123 may be embedded in the insulating or dielectric material 121.

[0027] The conductive structure 122 may include a thermally conductive material. The conductive structure 122 may include a conductive material. The conductive structure 122 may include, for example, but not limited to, copper (Cu), aluminum (Al), gold (Au), silver (Ag), or other suitable materials. The conductive structure 122 may include a metal or an alloy. The conductive structure 122 may include a non-metallic material, such as, but not limited to, graphene, or other suitable materials.

[0028] The conductive structure 123 may include a thermally conductive material. The conductive structure 123 may include a conductive material. The conductive structure 123 may include, for example, but not limited to, copper (Cu), aluminum (Al), gold (Au), silver (Ag), or other suitable materials. The conductive structure 123 may include a metal or an alloy. The conductive structure 123 may include a non-metallic material, such as, but not limited to, graphene, or other suitable materials. The conductive structure 123 may include a relatively large pad 123a.

[0029] The substrate 12 may serve as a heat dissipation structure. The conductive structure 122 may serve as a heat dissipation structure. The conductive structure 123 may serve as a heat dissipation structure.

[0030] Substrate 12 may be electrically connected to substrate 10 through connection element 151. Substrate 12 may be thermally connected to substrate 10 through connection element 151. Conductive structure 122 may be in direct contact with connection element 151. Conductive structure 123 may be in direct contact with connection element 151.

[0031] The connection element 151 may include, for example but not limited to, solder, a conductive adhesive (such as a resin mixed with conductive particles), or other suitable bonding materials.

[0032] The optical module 13 may include an insulating or dielectric material 131 , a conductive structure 132 , a substrate 133 , an optical element 134 , and a semiconductor device 135 .

[0033] The optical module 13 may be disposed on the substrate 10 . The optical module 13 may be disposed on the substrate 12 .

[0034] Insulating or dielectric material 131 can be the same as or similar to insulating or dielectric material 121. Insulating or dielectric material 131 can be different from insulating or dielectric material 121.

[0035] The conductive structure 132 may include the same or similar material as the conductive structure 122. The conductive structure 132 may include the same or similar material as the conductive structure 122. The conductive structure 132 may be disposed or embedded in the insulating or dielectric material 131.

[0036] The base or conductive substrate 133 may include the same or similar material as the conductive structure 122. The base or conductive substrate 133 may include the same or similar material as the conductive structure 122. The base or conductive substrate 133 may be disposed or embedded in the insulating or dielectric material 131.

[0037] The conductive structure 132 and the base 133 may comprise a lead frame. The conductive structure 132 and the base 133 may comprise a portion of a lead frame. The conductive structure 132 and the base 133 may comprise a patterned copper plate or copper foil.

[0038] The conductive structure 132 and the substrate 133 can be connected by placing some conductive pillars or supports ( Figure 1 The conductive structure 132 may be formed by placing a conductive material (not shown) on a lead frame. Portions of the conductive structure 132 may be formed by electroplating techniques. The insulating or dielectric material 131 may encapsulate the conductive structure 132. The insulating or dielectric material 131 may encapsulate the substrate 133.

[0039] Semiconductor device 135 may include a wire-bonded semiconductor die or chip. Semiconductor device 135 may include a flip-chip semiconductor die or chip. Semiconductor device 135 may include, for example, but not limited to, a power die, an optical die, a light-emitting die (e.g., a light-emitter diode (LED) die, a vertical cavity surface-emitting laser), or the like. Semiconductor device 135 may emit visible light. Semiconductor device 135 may emit light having a wavelength within a range, such as infrared (IR) light.

[0040] The insulating or dielectric material 131, the conductive structure 132 and the substrate 133 may serve as a housing ( Figure 1(not shown). The housing may define a space or recess for accommodating or housing the semiconductor device 135. The semiconductor device 135 may be disposed on the conductive substrate 133. The semiconductor device 135 may be disposed on the conductive substrate 133 by a bonding material (e.g., an adhesive or a conductive adhesive). The substrate 133 may support the semiconductor device 135. The semiconductor device 135 may be electrically connected to the conductive structure 132. The substrate 133 may include a portion ( Figure 1 The base 133 may include a portion (not shown) exposed by the insulating material 131, and the portion may have substantially the same width as the pad 123a of the substrate 12. Figure 1 ), and the portion may have substantially the same area as the pad 123a of the substrate 12.

[0041] Optical component 134 may include a plate or film that is transparent to light having a wavelength within a range. For example, if the light emitted from semiconductor device 135 includes visible light, optical component 134 may include a glass plate (or film) or a plastic plate (or film) that is transparent to the human eye. For example, if the light emitted from semiconductor device 135 includes IR light, optical component 134 may include silicon or other materials that allow IR light to pass through. Optical component 134 may include, for example, but not limited to, a filter, a beam shaping element, a diffractive optical element (DOE), a diffuser, or a microlens array (MLA). Optical component 134 may include a conductive structure. Optical component 134 may include a transparent conductive structure, such as, but not limited to, indium tin oxide (ITO) or indium-doped zinc oxide (IZO).

[0042] Optical assembly 134 may be eliminated according to some other embodiments of the invention.

[0043] The optical component 134 may be electrically connected to the conductive structure 132. The optical component 134 may be electrically connected to the housing.

[0044] The optical module 13 may be electrically connected to the substrate 12 through the connection element 152. The optical module 13 may be thermally connected to the substrate 12 through the connection element 152. The conductive structure 132 may be in direct contact with the connection element 152. The conductive base 133 may be in direct contact with the connection element 152.

[0045] The connecting element 152 may comprise a similar or identical material to the connecting element 151. The connecting element 152 may comprise a different material than the connecting element 151.

[0046] The semiconductor device package 1 may support or facilitate, for example but not limited to, power supply, which means that the semiconductor device 135 (eg, the power die 135 ) may generate relatively large heat.

[0047] The semiconductor device package 1 may support or facilitate, for example but not limited to, virtual reality (VR) technology, augmented reality (AR) technology, mixed reality (MR) technology, or the like. Light emitted from the semiconductor device 135 may need to reach a target at a distance of approximately one to three meters from the semiconductor device package 1. In other words, the semiconductor device 135 may require a maximum of approximately two to four watts of power, which may generate relatively large amounts of heat during operation of the semiconductor device package 1.

[0048] Heat generated by semiconductor device 135 can be dissipated by substrate 12. A thermally conductive path, which may include conductive base 133, connecting element 152, conductive structure 123, and connecting element 151, can help transfer heat generated by semiconductor device 135 to substrate 10. A conductive base 133 having a relatively large width or cross-sectional area compared to conductive structure 132 can facilitate heat dissipation. Pad 123a having a relatively large width or cross-sectional area compared to conductive structure 122 can also facilitate heat dissipation.

[0049] The semiconductor device 135 may be controlled by the semiconductor device 11. The semiconductor device 135 may be electrically connected to the semiconductor device 11.

[0050] If optical component 134 is separated from housing or conductive structure 132, the disconnection can be detected by semiconductor device 11, and semiconductor device 11 can cut off power to semiconductor device 135. Therefore, if semiconductor device 135 is a light emitting device, semiconductor device 135 will cease operation, thereby avoiding direct light exposure to the eyes of a person (e.g., a person who may use a device including semiconductor device package 1), or avoiding light pollution or other undesirable light emission.

[0051] The optical module 14 may be disposed on the substrate 10. The optical module 14 may be disposed to one side of the optical module 13. The optical module 14 may be disposed to one side of the optical module 13 on the substrate 10. The optical module 14 may be electrically connected to the substrate 10. The optical module 14 may be electrically connected to the substrate 10 through the connection element 153.

[0052] The connecting element 153 may comprise a similar or identical material to the connecting element 151. The connecting element 153 may comprise a different material than the connecting element 151.

[0053] The optical module 14 may include a substrate 141 , a semiconductor device 142 , a connecting element 143 , a cover 144 , a lid 145 , another lid 146 , and a lens assembly 147 .

[0054] The substrate 141 may include a structure similar to or the same as the substrate 10. The substrate 141 may include a structure different from the substrate 10. The substrate 141 may be electrically connected to the substrate 10 through the connection element 153.

[0055] Semiconductor device 142 may be disposed on substrate 141. Semiconductor device 142 may include a wire-bonded semiconductor die or chip. Semiconductor device 142 may include a flip-chip semiconductor die or chip. Semiconductor device 142 may include, for example, but not limited to, a sensor die, an optical die, an optical sensor die (e.g., a photodetector die, a photodetector), or the like. Semiconductor device 142 may receive light passing through lens assembly 147. Semiconductor device 142 may receive light passing through cover 144.

[0056] The cover 144 may be disposed on the semiconductor device 142. The cover 144 may be attached to the semiconductor device 142. The cover 144 may be attached to the semiconductor device 142 via a connection element 143. The cover 144 may be sealed to the semiconductor device 142 via the connection element 143.

[0057] Cover 144 may include a plate or film that is transparent to light having a wavelength within a range. For example, if the light passing through lens assembly 147 includes visible light, cover 144 may include a glass plate (or film) or a plastic plate (or film) that is transparent to the human eye. For example, if the light passing through lens assembly 147 includes IR light, cover 144 may include silicon (Si) or other materials that allow IR light to pass through. Cover 144 may include an optical filter.

[0058] The connection element 143 may include, for example but not limited to, solder, adhesive (which may include a conductive adhesive (such as a resin mixed with conductive particles) or a non-conductive adhesive), or other suitable bonding materials.

[0059] The semiconductor device 142, the connecting element 143 and the cover 144 can serve as a detector module ( Figure 1 not shown).

[0060] The cover 145 may be disposed on the substrate 141. The cover 145 may be attached to the substrate 141. The cover 145 may cover the substrate 142. The cover 145 may cover the connecting element 143. The cover 145 may cover the cover 144. The cover 145 may cover the detector module. The cover 145 may define a space to accommodate or house the detector module. The cover 145 may be relatively small in size. The cover 145 may have a relatively small width.

[0061] The cover 145 may comprise, for example but not limited to, plastic, polymer, metal, or other suitable materials. The cover 145 may comprise a light-impermeable material. The cover 145 may comprise a material to prevent light pollution or other undesirable light emission.

[0062] Cover 146 may comprise the same or similar material as cover 145. Cover 146 may comprise a different material than cover 145.

[0063] A cover 146 can be disposed on the substrate 10. The cover 146 can be disposed on the substrate 141. The cover 146 can be disposed on the detector module. The cover 146 can be disposed on the cover 145. The cover 146 can be attached to the cover 145. The cover 146 can cover the cover 145. The cover 146 can be attached to the cover 145 by a connecting element 154. The connecting element 154 can be disposed between the cover 145 and the cover 146. The cover 146 can have a relatively small size. The cover 146 can have a relatively small width.

[0064] The cover 146 can have an extension portion 146a. The extension portion 146a of the cover 146 can be in direct contact with the detector module. The extension portion 146a of the cover 146 can be in direct contact with the cap 144. The extension portion 146a of the cover 146 can extend below the connecting element 154. The extension portion 146a of the cover 146 can extend above the connecting element 154. The extension portion 146a of the cover 146 can extend above an upper portion of the cover 145 (not shown in the middle). The extension portion 146a of the cover 146 can extend into a space bounded by the cover 145. Figure 1 The extension portion 146a of the cover 146 can extend into a space bounded by the cover 145.

[0065] The cover 146 can bound a space to accommodate or house a lens assembly 147.

[0066] The connecting element 154 can include, for example but not limited to, solder, adhesive (which can include conductive adhesive (e.g., resin mixed with conductive particles) or non-conductive adhesive), or other suitable bonding material.

[0067] The lens assembly 147 can include a lens 147a and a lens 147b. The lens assembly 147 can include more or less lenses. The lens 147a can be held by the cover 146. The lens 147b can be held by the cover 146. The lens 147a can be fixed or mounted to the cover 146. The lens 147b can be fixed or mounted to the cover 146. The lens assembly 147 and the cover 146 can be formed as a single piece.

[0068] A number of detector modules (each of which can include a semiconductor device 142, a connecting element 143, and a cap 144) can be formed by attaching the cap 144 to each of the semiconductor devices 142 of a wafer and sawing the wafer. Such pre-formed detector modules (which can be formed prior to assembly of the semiconductor device package 1) can prevent the semiconductor devices 142 from being contaminated (e.g., with dust, water, or other particles) during manufacturing.

[0069] Lens assembly 147 may be integrated with lid 146 prior to assembling semiconductor device package 1. Extension 146a may facilitate alignment of lens assembly 147 with semiconductor device 142. Extension 146a may facilitate height alignment of lens assembly 147 with semiconductor device 142. Extension 146a may ensure that the focus of lens assembly 147 falls substantially on the sensing surface or area of ​​semiconductor device 142. For example, during the operation of attaching lid 146 (which may be integrated with lens assembly 147) to cover 145, the operation may be stopped when extension 146a contacts cover cap 144.

[0070] The effective optical path or focal length between lens assembly 147 and semiconductor device 142 may depend on the length of extension portion 146a. The effective optical path or focal length between lens assembly 147 and semiconductor device 142 may depend on the thickness of extension portion 146a (which may be set accordingly). These arrangements can alleviate or minimize optical issues caused by assembly misalignment / deviation. These arrangements can alleviate or minimize optical issues caused by deviations from manufacturing tolerances / deviation.

[0071] Figure 2 is a cross-sectional view of a semiconductor device package according to some embodiments of the present invention.

[0072] The semiconductor device package 2 is similar to the reference Figure 1 The semiconductor device package 1 is shown and described except that another semiconductor device 136 is incorporated into the optical module 13 to form the optical module 13 ′; the substrate 10 is replaced by a substrate 10 ′, and the semiconductor device 11 may be disposed on the substrate 10 ′. The conductive structure 132 may be electrically connected to the semiconductor device 136 .

[0073] The semiconductor device 136 may include a wire-bonded semiconductor die or chip. The semiconductor device 136 may include a flip-chip semiconductor die or chip. The semiconductor device 136 may include, for example but not limited to, a sensor die, an optical die, an optical sensor die (e.g., a photodetector die, a photodetector), a microelectromechanical system (MEMS) die, a pressure sensor die, a humidity sensor die, or the like.

[0074] If optical component 134 separates from housing or conductive structure 132 , the disconnect may be detected by semiconductor device 11 , and semiconductor device 11 may cut off power to semiconductor device 135 .

[0075] If optical component 134 is separated from housing or conductive structure 132 , the change in light may be detected by semiconductor device 136 , which may trigger semiconductor device 11 to cut power to semiconductor device 135 .

[0076] If optical component 134 is separated from housing or conductive structure 132 , the change in pressure may be detected by semiconductor device 136 , which may trigger semiconductor device 11 to cut power to semiconductor device 135 .

[0077] If optical component 134 is separated from housing or conductive structure 132 , the change in humidity may be detected by semiconductor device 136 , which may trigger semiconductor device 11 to cut power to semiconductor device 135 .

[0078] Therefore, if the semiconductor device 135 is a light emitting device, the semiconductor device 135 will stop operating, thereby avoiding direct exposure of light to the eyes of a person (e.g., a person who may use an apparatus including the semiconductor device package 2), or avoiding light pollution or other undesirable light emission.

[0079] Figure 2A is a cross-sectional view of a semiconductor device package according to some embodiments of the present invention.

[0080] The semiconductor device package 2a is similar to the reference Figure 2 The semiconductor device package 2 is shown and described except that the conductive structure 132 of the optical module 13 ′ is replaced by a conductive structure 132 ′ to form the optical module 13 a ′.

[0081] The conductive structure 132' is similar to that shown in FIG. Figure 1 The conductive structure 132 is described and illustrated except that the conductive pillars or supports of the conductive structure 132 are eliminated. The insulating or dielectric material 131, the conductive structure 132' and the conductive substrate 133 may act as a housing ( Figure 2A The housing may be electrically disconnected from the optical component 134. The conductive structure 132' may be electrically disconnected from the optical component 134. The conductive structure 132' may be electrically connected to the semiconductor device 136.

[0082] If optical component 134 is separated from housing or conductive structure 132 , the change in light may be detected by semiconductor device 136 , which may trigger semiconductor device 11 to cut power to semiconductor device 135 .

[0083] If optical component 134 is separated from housing or conductive structure 132 , the change in pressure may be detected by semiconductor device 136 , which may trigger semiconductor device 11 to cut power to semiconductor device 135 .

[0084] If optical component 134 is separated from housing or conductive structure 132 , the change in humidity may be detected by semiconductor device 136 , which may trigger semiconductor device 11 to cut power to semiconductor device 135 .

[0085] Therefore, if the semiconductor device 135 is a light-emitting device, the semiconductor device 135 will stop operating, thereby avoiding direct exposure of light to the eyes of a person (e.g., a person who may use an apparatus including the semiconductor device package 2a), or avoiding light pollution or other undesirable light emission.

[0086] Figure 3 is a cross-sectional view of a semiconductor device package according to some embodiments of the present invention.

[0087] The semiconductor device package 3 is similar to that of the reference Figure 2 The semiconductor device package 2 is shown and described, except that the semiconductor device 11 may instead be attached to a substrate 12 .

[0088] Figure 3A is a cross-sectional view of a semiconductor device package according to some embodiments of the present invention.

[0089] The semiconductor device package 3a is similar to that of the reference Figure 2A The semiconductor device package 2 a is shown and described, except that the semiconductor device 11 may instead be attached to a substrate 12 .

[0090] Figure 4 is a cross-sectional view of a semiconductor device package according to some embodiments of the present invention.

[0091] The semiconductor device package 4 is similar to the reference Figure 2 The semiconductor device package 2 is shown and described except that the substrate 12 is replaced by a substrate 12 ′ and the optical module 13 ′ is replaced by an optical module 13 ″.

[0092] The substrate 12' is similar to that of the reference Figure 2 The substrate 12 is shown and described except that the conductive structure 122 is replaced by a relatively larger conductive structure 122' and the conductive structure 123 is replaced by a relatively larger conductive structure 123'. The insulating or dielectric material 121' can be the same as or similar to the insulating or dielectric material 121. The substrate 12' is similar to the substrate 120 as described in reference Figure 2 The substrate 12 is shown and described with the exception that the recess defined by the substrate 12 ′ may be closer to another side of the semiconductor device package 4 than to one side of the semiconductor device package 4 .

[0093] The optical module 13' is similar to the reference Figure 2 The optical module 13 is shown and described except that the conductive substrate 133 is replaced by a conductive substrate 133 ′. The conductive substrate 133 ′ may be disposed closer to another side of the semiconductor device package 4 than to one side of the semiconductor device package 4 .

[0094] Figure 4A is a cross-sectional view of a semiconductor device package according to some embodiments of the present invention.

[0095] The semiconductor device package 4a is similar to that of the reference Figure 4 The semiconductor device package 4 is shown and described except that the optical module 13 ″ is replaced by an optical module 13 a ″.

[0096] The conductive structure 132' is similar to that shown in FIG. Figure 4 The conductive structure 132 is described and illustrated except that the conductive pillars or supports of the conductive structure 132 are eliminated. The insulating or dielectric material 131, the conductive structure 132' and the conductive substrate 133 may act as a housing ( Figure 4A The housing may be electrically disconnected from the optical component 134. The conductive structure 132' may be electrically disconnected from the optical component 134. The conductive structure 132' may be electrically connected to the semiconductor device 136.

[0097] Figure 5 is a cross-sectional view of a semiconductor device package according to a comparative embodiment of the present invention.

[0098] Each of the semiconductor device packages 1, 2, 2a, 3, 3a, 4, and 4a may include a thermally resistive material. Each of the components of the semiconductor device packages 1, 2, 2a, 3, 3a, 4, and 4a may include a thermally resistive material. Each of the semiconductor device packages 1, 2, 2a, 3, 3a, 4, and 4a may include a thermally resistive material to ensure reliability after thermal cycles, such as reflow operations.

[0099] refer to Figure 5 The semiconductor device package 5 may include a substrate 10 ′, a semiconductor device 11 , a semiconductor device 142 , a semiconductor device 135 , a semiconductor device 136 , an optical component 134 , a carrier 20 , a ceramic housing 21 , a holding or clamping mechanism 22 , a cover 23 , a lens assembly 147 , and a stiffener 16 .

[0100] The carrier 20 may comprise a plastic material. The carrier 20 may be formed as a single piece. The carrier 20 may be formed by injection molding. The carrier 20 may include a side wall 201. The side wall 201 may have some threads ( Figure 5 The cover 23 may have some threads ( Figure 5(not shown). The threads of sidewall 201 may mate with the threads of cover 23. Cover 23 (with integrated lens assembly 147) may be screwed into sidewall 201. Cover 23 (with integrated lens assembly 147) may engage with sidewall 201. Cover 23 (with integrated lens assembly 147) may be driven into sidewall 201 to adjust or calibrate the distance from lens assembly 147 to semiconductor device 142. Sidewall 201 may have a relatively large size or width to reinforce the structure when providing the threads. Cover 23 may have a relatively large size or width to reinforce the structure when providing the threads. Engaging cover 23 with carrier 20 may be time-consuming for calibration.

[0101] The carrier 20 may include an extension portion 202. The transparent plate ( Figure 5 The transparent plate 202 may be attached to the extension portion 202 of the carrier 20. The transparent plate may be contaminated by particles from driving or screwing the cover 23, which may adversely affect the performance of the semiconductor device package 5.

[0102] The carrier 20 may include an extension 203. The extension 203 may support the ceramic housing 21. The ceramic housing 21 may be attached to the substrate ( Figure 5 (not shown), which may be attached to the extension portion 202 and electrically connected to the substrate 10'; the carrier 20 may have a relatively large size or width.

[0103] Heat from semiconductor device 135 may not be dissipated relatively well by carrier 20 .

[0104] The holding or clamping mechanism 22 may comprise a metal or alloy to prevent the optical component 134 from escaping the ceramic housing 21. The holding or clamping mechanism 22 may have a relatively large size or width.

[0105] As used herein, spatially relative terms such as "below," "beneath," "lower," "above," "upper," "lower," "left," "right," and the like may be used herein to describe the relationship of one element or feature to another element or feature as depicted in the figures. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be oriented in other ways (rotated 90 degrees or in other orientations) and the spatially relative descriptors used herein should likewise be interpreted accordingly. It should be understood that when an element is referred to as being "connected to" or "coupled to" another element, it can be directly connected to or coupled to the other element, or intervening elements may be present.

[0106] As used herein, the terms "approximately," "substantially," "roughly," and "about" are used to describe and account for small variations. When used in conjunction with an event or circumstance, the term may refer to instances where the event or circumstance clearly occurred as well as instances where the event or circumstance closely approximates occurrence. As used herein with respect to a given value or range, the term "approximately" generally means within ±10%, ±5%, ±1%, or ±0.5% of the given value or range. Ranges may be expressed herein as from one endpoint to another or between two endpoints. Unless otherwise specified, all ranges disclosed herein include endpoints. The term "substantially coplanar" may refer to two surfaces that are within a few microns (μm) along the same plane (e.g., within 10 μm, within 5 μm, within 1 μm, or within 0.5 μm along the same plane). When a value or characteristic is said to be "substantially" the same, the term may mean that the value is within ±10%, ±5%, ±1%, or ±0.5% of the average of the values.

[0107] The foregoing summarizes the features of several embodiments and detailed aspects of the present invention. The embodiments described herein may be readily utilized as a basis for designing or modifying other processes and structures for carrying out the same or similar purposes and / or achieving the same or similar advantages as the embodiments introduced herein. Such equivalent constructions do not depart from the spirit and scope of the present invention, and various changes, substitutions, and modifications may be made thereto without departing from the spirit and scope of the present invention.

Claims

1. A semiconductor device package, comprising: a first substrate having a first surface and a second surface opposite to the first surface; a heat dissipation structure disposed on the first surface of the first substrate; and A first optical module is disposed on the heat dissipation structure and comprises: a housing including a conductive substrate for dissipating heat; a first optical component disposed on the housing; and A light emitting device is disposed in the housing and directly above and in contact with the conductive substrate, the light emitting device being capable of emitting light toward the first optical component. 2 . The semiconductor device package according to claim 1 , wherein the housing comprises an insulating material, and the conductive substrate is used to support the light emitting device and is embedded in the insulating material. 3 . The semiconductor device package of claim 1 , wherein the heat dissipating structure has a first conductive structure connected to the conductive base, the first conductive structure of the heat dissipating structure being connected to the conductive base via a first conductive connecting element. 4 . The semiconductor device package of claim 1 , wherein the heat dissipating structure has a first conductive structure connected to the first substrate, the first conductive structure of the heat dissipating structure being connected to the conductive base via a second conductive connecting element. 5 . The semiconductor device package of claim 1 , wherein the housing comprises a conductive structure electrically connected to the first optical component and an insulating material, the conductive structure embedded in the insulating material and extending from a top surface to a bottom surface of the insulating material. 6 . The semiconductor device package of claim 5 , wherein the heat dissipation structure has a second conductive structure electrically connected to the conductive structure of the housing and the first substrate.

7. The semiconductor device package of claim 6 , further comprising a semiconductor device electrically connected to the first substrate and the second conductive structure of the heat dissipation structure, wherein the semiconductor device is configured to cut off power to the light emitting device in response to the first optical component being separated from the housing.

8. The semiconductor device package according to claim 1, further comprising a semiconductor device, wherein the heat dissipation structure has a recess for accommodating the semiconductor device, so that the semiconductor device and the first substrate are arranged in parallel, thereby reducing the size of the semiconductor device package. 9 . The semiconductor device package of claim 1 , further comprising a semiconductor device, wherein the semiconductor device is attached to a lower surface of the insulating material of the heat dissipation structure.

10. The semiconductor device package of claim 1, wherein the first optical module further comprises a detector disposed directly above and in contact with the conductive substrate, wherein the housing comprises a conductive structure electrically connected to the detector. 11 . The semiconductor device package of claim 10 , wherein the housing is electrically disconnected from the first optical component.

12. The semiconductor device package according to claim 1, further comprising a second optical module disposed on the first surface of the first substrate and on one side of the first optical component and comprising: a second substrate; a detector module disposed on the second substrate; and A first cover is placed on the detector module and has an extension portion that is in direct contact with the detector module.

13. The semiconductor device package according to claim 12, further comprising: a second cover disposed on the second substrate; and A connecting element is disposed between the first cover and the second cover. 14 . The semiconductor device package of claim 13 , wherein the first cover is disposed on the second cover, and wherein the extending portion of the first cover extends under the connecting element. 15 . The semiconductor device package according to claim 12 , wherein the detector module comprises a detector and a cover disposed on the detector, and wherein the extension portion of the first cover is in direct contact with the cover of the detector module.

16. A semiconductor device package, comprising: a first substrate; A first optical module is disposed on the first substrate and comprises: a housing including a conductive substrate for dissipating heat; a first optical component disposed on the housing; and a light emitting device disposed in the housing and directly above and in contact with the conductive substrate, the light emitting device emitting light toward the first optical component; and A second optical module is disposed on the first substrate and arranged in parallel on one side of the first optical component and includes: a second substrate disposed on the first substrate; a detector module disposed on the second substrate; and A first cover is placed on the detector module and has an extension portion that is in direct contact with the detector module. 17 . The semiconductor device package of claim 16 , wherein the first optical module further comprises a detector disposed directly above and in contact with the conductive substrate, wherein the housing comprises a conductive structure electrically connected to the detector. The semiconductor device package of claim 17 , wherein the housing is electrically disconnected from the first optical component.

19. The semiconductor device package of claim 18, further comprising a heat dissipation structure having the first conductive structure electrically connected to the housing and a second conductive structure of the first substrate.

20. The semiconductor device package of claim 19, further comprising a semiconductor device electrically connected to the first substrate and the second conductive structure of the heat dissipation structure.

21. The semiconductor device package of claim 17, further comprising: a second cover disposed on the second substrate; and A connecting element is disposed between the first cover and the second cover.

22. The semiconductor device package according to claim 21, wherein the first cover covers the second cover. 23 . The semiconductor device package of claim 21 , wherein the extending portion of the first cover extends over the connecting element. 24 . The semiconductor device package according to claim 16 , wherein the detector module comprises a detector and a cover disposed on the detector, and wherein the extension portion of the first cover is in direct contact with the cover of the detector module.

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