Remote Capacitively Coupled Plasma Deposition of Amorphous Silicon

Abstract

A method for depositing an amorphous silicon material is provided, the method comprising: generating a plasma within a plasma cell in fluid communication with a process chamber; and flowing the plasma through an ion suppressor to generate an activation fluid containing reactive species and neutral species. The activation fluid is ion-free or contains a lower concentration of ions than the plasma. The method further comprises: flowing the activation fluid into a first inlet of a dual-channel showerhead within the process chamber; and flowing a silicon precursor into a second inlet of the dual-channel showerhead. Thereafter, the method comprises: flowing a mixture of the activation fluid and the silicon precursor from the dual-channel showerhead; and forming an amorphous silicon layer on a substrate disposed within the process chamber.

Description

Background Art

[0001] Description of Related Technology

[0002] Plasma deposition and etching processes for the manufacture of semiconductor integrated circuits have been widely used for decades. These processes typically involve forming a plasma from a plasma-generating gas that is exposed to an electric field of sufficient power within a process chamber to induce ionization of the gas. The temperature required to form these gases into a plasma can be much lower than the temperature required to thermally ionize the same gas. Therefore, plasma generation processes can be used to generate reactive radicals and ion species from the starting gas at significantly lower chamber processing temperatures than is possible by simply heating the gas. This allows the plasma to deposit and / or etch material from the substrate surface without raising the substrate temperature above a threshold that would melt, decompose, or otherwise damage the material on the substrate.

[0003] Exemplary plasma deposition processes include plasma-enhanced chemical vapor deposition (PECVD) of dielectric materials, such as silicon oxide or silicon nitride, onto exposed surfaces of substrates. Conventional PECVD involves mixing gases and / or deposition precursors in a process chamber and striking a plasma from the gases to generate reactive species that react and deposit material onto the substrate. The plasma is typically positioned close to the exposed surface of the substrate to promote efficient deposition of reaction products.

[0004] Similarly, the plasma etching process involves exposing selected portions of a substrate to plasma-activated etching species that chemically react with the substrate and / or physically sputter material. Adjustments to the etchant gas, plasma excitation energy, and electrical bias between the substrate and the charged plasma species, among other parameters, can be used to control the rate, selectivity, and direction of plasma-etched material removal. Some plasma techniques, such as high-density plasma chemical vapor deposition (HDP-CVD), rely on simultaneous plasma etching and deposition to create features on a substrate.

[0005] While plasma environments are generally less damaging to substrates than high-temperature deposition environments, they still present manufacturing challenges. Etch accuracy can be an issue with high-energy plasmas, which can over-etch shallow trenches and gaps. High-energy species in the plasma, especially ionized species, can produce undesirable reactions in the deposited material, adversely affecting its properties.

[0006] Therefore, there is a need for methods that provide more precise control over plasma deposition processes of silicon materials, such as amorphous silicon materials, on substrates during fabrication. Summary of the Invention

[0007] In one or more embodiments, a method for depositing an amorphous silicon material includes: generating a plasma in a plasma cell in fluid communication with a process chamber; and flowing the plasma through an ion suppressor to generate an activation fluid containing reactive species and neutral species. The activation fluid is ion-free or contains a lower concentration of ions than the plasma. The method further includes: flowing the activation fluid into a first inlet of a dual-channel showerhead in the process chamber; and flowing a silicon precursor into a second inlet of the dual-channel showerhead. Thereafter, the method includes: flowing a mixture of the activation fluid and the silicon precursor out of the dual-channel showerhead; and forming an amorphous silicon layer on a substrate disposed in the process chamber.

[0008] In another embodiment, a method for depositing an amorphous silicon material includes generating a plasma within a plasma cell in fluid communication with a process chamber; and flowing the plasma through an ion suppressor to generate an activation fluid comprising reactive species and neutral species. The activation fluid is ion-free or contains a lower concentration of ions than the plasma. The method further includes flowing the activation fluid, a silicon precursor, and a dopant precursor through a dual-channel showerhead to generate a mixture of the activation fluid, the silicon precursor, and the dopant precursor within the process chamber; and exposing a substrate disposed in the process chamber to the mixture to form an amorphous silicon layer on the substrate.

[0009] In another embodiment, a method for depositing an amorphous silicon material includes generating a plasma within an electron beam (eBeam) unit in fluid communication with a process chamber; and flowing the plasma through an ion suppressor to generate an activation fluid comprising reactive species and neutral species. The activation fluid is ion-free or contains a lower concentration of ions than the plasma. The method further includes flowing the activation fluid and a silicon precursor through a dual-channel showerhead to generate a mixture of the activation fluid and a dopant precursor within the process chamber; and exposing a substrate disposed in the process chamber to the mixture to form an amorphous silicon layer on the substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] In order that the above-mentioned features of the present disclosure may be understood in detail, the present disclosure, briefly summarized above, may be described in more detail by reference to embodiments, some of which are illustrated in the accompanying drawings. It should be noted, however, that the drawings illustrate only exemplary embodiments and are therefore not to be considered limiting of the scope, as the present disclosure may admit to other equally effective embodiments.

[0011] Figure 1Describes a capacitively coupled plasma chemical vapor deposition system for depositing amorphous silicon layers and other materials as discussed and described in one or more embodiments herein; and

[0012] Figure 2 Depicts a chemical vapor deposition system with an electron beam unit that can be used to deposit amorphous silicon layers and other materials as discussed and described in one or more embodiments herein.

[0013] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation. DETAILED DESCRIPTION

[0014] The embodiments discussed and described herein provide methods and systems for depositing amorphous layers and materials on substrates. Figure 1 A capacitively coupled plasma (CCP) chemical vapor deposition (CVD) system 100 is depicted that can be used to deposit amorphous silicon layers and other materials. In one or more embodiments, a method for depositing amorphous silicon material includes generating a plasma 110 within a plasma cell 120 in fluid communication with a process chamber 150. The plasma cell 120 can include a faceplate 122 and an ion blocker 124 separated by an isolator or ion suppressor 126. One or more carrier gases and / or one or more reactive gases (depicted as gas stream 108) can be introduced into the plasma cell 120 and ignited to generate or otherwise create the plasma 110 therebetween.

[0015] The plasma 110 can flow or pass through the ion suppressor 126 to produce an activated fluid 112 containing one or more reactive species and / or one or more neutral species. In some examples, the activated fluid 112 is free of ions or substantially free of ions. In other examples, the activated fluid 112 contains one or more ionic species, but has a lower concentration of ions than the plasma 110, such that the ion concentration of the activated fluid 112 is less than the ion concentration of the plasma. The ion suppressor 126 blocks most, if not all, ions from passing therethrough to produce an activated fluid 112 rich in reactive species and / or neutral species.

[0016] In one or more embodiments, the activated fluid 112 contains an ion concentration that is about 50%, about 65%, or about 80% to about 85%, about 90%, about 95%, about 97%, about 98%, about 99%, about 99.5%, or about 99.9% lower than the ion concentration of the plasma. For example, the activated fluid 112 contains an ion concentration that is about 50% to about 99.9%, about 50% to about 99%, about 50% to about 95%, about 50% to about 90%, about 50% to about 85%, about 50% to about 80%, about 70% to about 99.9%, about 70% to about 99%, about 70% to about 95%, about 70% to about 90%, about 70% to about 85%, about 70% to about 80%, about 90% to about 99.9%, about 90% to about 99%, about 90% to about 95%, or about 90% to about 92% lower than the ion concentration of the plasma.

[0017] The activation fluid 112 may be flowed or delivered to the first inlet 132 of the dual-channel showerhead 130 within the process chamber 150. One or more silicon precursors and / or one or more dopant precursors (e.g., boron or phosphorus precursors) (precursors indicated by arrows 140) may be flowed or delivered to one or more inlets 134 (e.g., one inlet is shown, but two, three, or more inlets may be included) on the dual-channel showerhead 130. The activation fluid, silicon precursor, and one or more optional dopant precursors may be mixed or otherwise combined within the dual-channel showerhead 130 to produce a gaseous or fluid mixture 114.

[0018] Thereafter, a mixture 114 containing the activation fluid, the silicon precursor, and one or more optional dopant precursors may be flowed or transferred from the dual channel showerhead 130 to a substrate 102 positioned below the dual channel showerhead 130, such as a substrate on a substrate support 104. An amorphous silicon layer is deposited or otherwise formed on the substrate 102 disposed in the process chamber 150.

[0019] Figure 2 A CVD system 200 is depicted having an electron beam unit 220 that can be used to deposit amorphous silicon layers and other materials. In one or more embodiments, a method for depositing an amorphous silicon material includes generating a plasma 210 within the electron beam unit 220 (also a plasma generator) in fluid communication with a process chamber 250. The electron beam unit 220 may include a faceplate 122 and an ion blocker 124 separated by an isolator or ion suppressor 126. One or more carrier gases and / or one or more reactive gases (depicted as gases 108) may be introduced into the electron beam unit 220 and these gases may be ignited to generate a plasma 210 therein via an electron beam or otherwise.

[0020] The plasma 210 can flow or pass through the ion suppressor 126 to produce an activated fluid 112 containing one or more reactive species and / or one or more neutral species. In some examples, the activated fluid 112 is free of ions or substantially free of ions. In other examples, the activated fluid 112 contains one or more ionic species, but has a lower concentration of ions than the plasma 210. The ion suppressor 126 blocks most, if not all, ions from passing therethrough to produce an activated fluid 112 rich in reactive species and / or neutral species.

[0021] The activation fluid 112 may be flowed or delivered to the first inlet 132 of the dual-channel showerhead 130 within the process chamber 250. One or more silicon precursors and / or one or more dopant precursors (e.g., boron or phosphorus precursors) (precursors indicated by arrows 140) may be flowed or delivered to one or more inlets 134 (e.g., one inlet is shown, but two, three, or more inlets may be included) on the dual-channel showerhead 130. The activation fluid, silicon precursor, and one or more optional dopant precursors may be mixed or otherwise combined within the dual-channel showerhead 130 to produce a gaseous or fluid mixture 114.

[0022] Thereafter, a mixture 114 containing the activation fluid, the silicon precursor, and one or more optional dopant precursors may be flowed or transferred from the dual channel showerhead 130 to a substrate 102 positioned below the dual channel showerhead 130, such as a substrate on a substrate support 104. An amorphous silicon layer is deposited or otherwise formed on the substrate 102 disposed in the process chamber 250.

[0023] Further details and disclosures related to the plasma unit 120, dual channel showerhead 130, process chamber 150, and other components of the systems 100, 200 are further described in US Pat. No. 9,144,147, which is incorporated herein by reference in its entirety.

[0024] The system 100, 200 may further include a power supply (not shown) electrically coupled to the CCP unit or plasma unit 120 or electron beam unit 220 to provide electrical power to the faceplate 122 and / or ion suppressor 124 to generate the plasma 110, 210 in the plasma excitation region. The power supply may be configured to deliver an adjustable amount of power to the unit 120, 220 depending on the process being performed. For example, in a deposition process, the power delivered to the unit 120, 220 may be adjusted to set the conformality of the deposited layer. Deposited dielectric films are generally more flowable at lower plasma powers and become more conformal from flowable when the plasma power is increased. For example, when the plasma or RF power is reduced from about 1000 watts to about 100 watts or less (e.g., about 900 watts, 800 watts, 700 watts, 600 watts, or 500 watts or less), the argon-containing plasma 110, 210 maintained in the plasma excitation region can produce a more flowable silicon layer, and when the plasma power is increased from about 1000 watts or more (e.g., about 1000 watts, 1100 watts, 1200 watts, 1300 watts, 1400 watts, 1500 watts, 1600 watts, 1700 watts or more), a more conformal layer can be produced. When the plasma power is increased from low to high, the transition from flowable to conformal deposited material or layer can be relatively smooth and continuous, or proceed through relatively discrete thresholds. The plasma power can be adjusted (alone or in addition to other deposition parameters) to select a balance between conformal and flowable properties of the deposited material or layer.

[0025] The plasma, RF, or electron beam power may be from about 10 W, about 50 W, about 100 W, about 150 W, about 200 W, about 300 W, or about 500 W to about 600 W, about 700 W, about 800 W, about 1000 W, about 1200 W, about 1500 W, about 1800 W, about 2000 W, or more. For example, the plasma, RF, or electron beam power may be from about 10 W to about 2000 W, about 10 W to about 1500 W, about 10 W to about 1000 W, about 10 W to about 500 W, about 10 W to about 100 W, about 100 W to about 2000 W, about 100 W to about 1500 W, about 100 W to about 1000 W, about 100 W to about 500 W, or about 100 W to about 250 W.

[0026] The pressure within the process chamber may be from about 0.1 Torr, about 1 Torr, about 5 Torr, about 10 Torr, about 25 Torr, or about 50 Torr to about 75 Torr, about 100 Torr, about 150 Torr, about 200 Torr, or about 300 Torr. For example, the pressure within the process chamber may be from about 0.1 Torr to about 300 Torr, about 0.1 Torr to about 200 Torr, about 0.1 Torr to about 100 Torr, about 0.1 Torr to about 50 Torr, about 0.1 Torr to about 10 Torr, about 10 Torr to about 300 Torr, about 10 Torr to about 200 Torr, about 10 Torr to about 100 Torr, or about 10 Torr to about 50 Torr.

[0027] The temperature of the panel may be about -50° C., about -25° C., about 0° C., about 20° C., about 30° C., or about 50° C. to about 80° C., about 100° C., about 150° C., about 200° C., or about 250° C. For example, the temperature of the panel may be about -50° C. to about 250° C., about -50° C. to about 200° C., about -50° C. to about 150° C., about -50° C. to about 100° C., about -50° C. to about 50° C., about -50° C. to about 0° C., about 0° C. to about 250° C., about 0° C. to about 200° C., about 0° C. to about 150° C., about 0° C. to about 100° C., about 0° C. to about 50° C., about 0° C. to about 25° C., about 25° C. to about 250° C., about 25° C. to about 200° C., about 25° C. to about 150° C., about 25° C. to about 100° C., or about 25° C. to about 50° C.

[0028] The temperature of the heater, substrate support, substrate and / or process chamber may be about -50°C, about -25°C, about 0°C, about 20°C, about 30°C, about 50°C, about 80°C, or about 100°C to about 150°C, about 200°C, about 250°C, about 300°C, about 350°C, about 400°C, or about 450°C. For example, the temperature of the heater, substrate support, substrate and / or process chamber may be about -50°C to about 450°C, -50°C to about 400°C, -50°C to about 350°C, -50°C to about 300°C, -50°C to about 250°C, -50°C to about 200°C, -50°C to about 150°C, -50°C to about 100°C, -50°C to about 50°C, -50°C to about 0°C, about 0°C to about 450°C, about 0°C to about 400°C, about 0°C to about 350°C, from about 0°C to about 300°C, from about 0°C to about 250°C, from about 0°C to about 200°C, from about 0°C to about 150°C, from about 0°C to about 100°C, from about 0°C to about 50°C, from about 0°C to about 25°C, from about 25°C to about 450°C, from about 25°C to about 400°C, from about 25°C to about 350°C, from about 25°C to about 300°C, from about 25°C to about 250°C, from about 25°C to about 200°C, from about 25°C to about 150°C, from about 25°C to about 100°C, or from about 25°C to about 50°C.

[0029] In one or more embodiments, one or more carrier gases and / or one or more reactive species gases flow into or are transferred to the plasma unit or electron beam unit and pass through the plasma unit or electron beam unit. The carrier gas and / or reactive species gas may be or include, but are not limited to, argon, neon, helium, krypton, carbon tetrafluoride, nitrogen, hydrogen, free radicals of the foregoing, or any combination of the foregoing. In one or more examples, hydrogen radicals are generated together with a neutral carrier gas and a free radical carrier gas to produce an activated gas or fluid. The silicon precursor may be or include, but are not limited to, silane, disilane, trisilane, trisilylamine (TSA: trisilylamine), disilylamine (DSA: disilylamine), one or more fluorosilanes, one or more chlorosilanes, or any combination of the foregoing. Fluorosilane may have SiF x H 4-x The chemical formula of chlorosilane is SiCl x H 4-x wherein x is an integer of 1, 2, 3 or 4.

[0030] The flow rate of the carrier gas and / or the reactive species gas may be from about 10 sccm to about 3000 sccm, about 10 sccm to about 2000 sccm, about 10 sccm to about 1000 sccm, about 10 sccm to about 500 sccm, or about 10 sccm to about 100 sccm. The flow rate of the silicon precursor may be from about 10 sccm to about 500 sccm, about 10 sccm to about 300 sccm, about 10 sccm to about 200 sccm, about 10 sccm to about 100 sccm, or about 10 sccm to about 50 sccm. The flow rate of the dopant precursor may be from about 1 sccm to about 100 sccm, about 1 sccm to about 80 sccm, about 1 sccm to about 50 sccm, about 1 sccm to about 30 sccm, about 1 sccm to about 20 sccm, about 1 sccm to about 10 sccm, or about 1 sccm to about 5 sccm.

[0031] In an embodiment, a dopant is used to produce a doped amorphous silicon material or layer, and the dopant precursor may be or include, but is not limited to, one or more of a boron-containing precursor, a phosphorus-containing precursor, a carbon-containing precursor, or any combination thereof. The boron-containing precursor may be or include, but is not limited to, diborane, triborane, one or more trialkylboranes (e.g., trimethylborane or triethylborane), one or more boron halides (e.g., boron trifluoride or boron trichloride), one or more triallylboranes, or any combination thereof. The phosphorus-containing precursor may be or include, but is not limited to, phosphine, phosphorus oxychloride, one or more alkyl phosphites (e.g., monomethyl phosphite, dimethyl phosphite, or trimethyl phosphite), or one or more of any combination thereof.

[0032] Embodiments of the present disclosure further relate to any one or more of the following paragraphs:

[0033] 1. A method comprising: generating a plasma in a plasma unit in fluid communication with a process chamber; flowing the plasma through an ion suppressor to generate an activated fluid comprising reactive species and neutral species, wherein the activated fluid is ion-free or contains ions at a lower concentration than the plasma; flowing the activated fluid into a first inlet of a dual-channel showerhead in the process chamber; flowing a silicon precursor into a second inlet of the dual-channel showerhead; flowing a mixture of the activated fluid and the silicon precursor out of the dual-channel showerhead; and forming an amorphous silicon layer on a substrate disposed in the process chamber.

[0034] 2. The method of paragraph 1, further comprising flowing a dopant precursor into the dual-channel showerhead, wherein the dopant precursor comprises a boron-containing precursor, a phosphorus-containing precursor, or any combination thereof.

[0035] 3. The method of paragraph 2, wherein the dopant precursor comprises a boron-containing precursor, and wherein the boron-containing precursor comprises diborane, triborane, trialkylborane, triallylborane, or any combination thereof.

[0036] 4. The method of paragraph 2 or 3, wherein the dopant precursor comprises a phosphorus-containing precursor, and wherein the phosphorus-containing precursor comprises phosphine, phosphorus oxychloride, an alkyl phosphite, or any combination thereof.

[0037] 5. The method of any one of paragraphs 1 to 4, wherein the silicon precursor comprises silane, disilane, trisilane, trisilylamine (TSA), disilylamine (DSA), fluorosilane (SiF x H 4-x ), chlorosilane (SiCl x H 4-x ) or any combination of the above, wherein x is an integer of 1, 2, 3 or 4.

[0038] 6. The method of any of paragraphs 1 to 5, further comprising flowing a carrier gas through the plasma cell, wherein the carrier gas comprises argon, helium, nitrogen, hydrogen, or any combination thereof.

[0039] 7. The method of any of paragraphs 1 to 6, wherein the plasma unit comprises a capacitively coupled plasma (CCP) unit or an electron beam.

[0040] 8. A method comprising: generating a plasma in a plasma unit in fluid communication with a process chamber; flowing the plasma through an ion suppressor to generate an activation fluid comprising reactive species and neutral species, wherein the activation fluid is ion-free or contains ions at a lower concentration than the plasma; flowing the activation fluid, a silicon precursor, and a dopant precursor through a dual-channel showerhead to generate a mixture of the activation fluid, the silicon precursor, and the dopant precursor within the process chamber; and exposing a substrate disposed in the process chamber to the mixture to form an amorphous silicon layer on the substrate.

[0041] 9. The method of paragraph 8, wherein the dopant precursor comprises a boron-containing precursor, a phosphorus-containing precursor, or any combination thereof.

[0042] 10. The method of paragraph 9, wherein the dopant precursor comprises a boron-containing precursor, and wherein the boron-containing precursor comprises diborane, triborane, trialkylborane, triallylborane, a boron halide, or any combination thereof.

[0043] 11. The method of paragraphs 9 or 10, wherein the dopant precursor comprises a phosphorus-containing precursor, and wherein the phosphorus-containing precursor comprises phosphine, phosphorus oxychloride, an alkyl phosphite, or any combination thereof.

[0044] 12. The method of any one of paragraphs 8 to 11, wherein the silicon precursor comprises silane, disilane, trisilane, trisilylamine (TSA), disilylamine (DSA), fluorosilane (SiF x H 4-x ), chlorosilane (SiCl x H 4-x ) or any combination of the above, wherein x is an integer of 1, 2, 3 or 4.

[0045] 13. The method of any of paragraphs 8 to 12, further comprising flowing a carrier gas through the plasma cell, wherein the carrier gas comprises argon, helium, nitrogen, hydrogen, or any combination thereof.

[0046] 14. The method of any of paragraphs 8 to 13, wherein the plasma unit comprises a capacitively coupled plasma (CCP) unit or an electron beam.

[0047] 15. A method comprising: generating a plasma in an electron beam unit in fluid communication with a process chamber; flowing the plasma through an ion suppressor to generate an activation fluid comprising reactive species and neutral species, wherein the activation fluid is ion-free or contains a lower concentration of ions than the plasma; flowing the activation fluid and a silicon precursor through a dual-channel showerhead to generate a mixture of the activation fluid and a dopant precursor within the process chamber; and exposing a substrate disposed in the process chamber to the mixture to form an amorphous silicon layer on the substrate.

[0048] 16. The method of paragraph 15, further comprising flowing a dopant precursor into the dual channel showerhead, wherein the dopant precursor comprises a boron-containing precursor, a phosphorus-containing precursor, or any combination thereof.

[0049] 17. The method of paragraph 16, wherein the dopant precursor comprises a boron-containing precursor, and wherein the boron-containing precursor comprises diborane, triborane, trialkylborane, triallylborane, a boron halide, or any combination thereof.

[0050] 18. The method of paragraphs 16 or 17, wherein the dopant precursor comprises a phosphorus-containing precursor, and wherein the phosphorus-containing precursor comprises phosphine, phosphorus oxychloride, an alkyl phosphite, or any combination thereof.

[0051] 19. The method of any one of paragraphs 15 to 18, wherein the silicon precursor comprises silane, disilane, trisilane, trisilylamine (TSA), disilylamine (DSA), fluorosilane (SiF x H 4-x ), chlorosilane (SiCl x H 4-x ) or any combination of the above, wherein x is an integer of 1, 2, 3 or 4.

[0052] 20. The method of any of paragraphs 15 to 19, further comprising flowing a carrier gas through the electron beam unit, wherein the carrier gas comprises argon, helium, nitrogen, hydrogen, or any combination thereof.

[0053] A composition, article, material, or film produced by the method of any of paragraphs 1 to 20.

[0054] Although the foregoing is directed to embodiments of the present disclosure, other and further embodiments may be devised without departing from the basic scope of the present disclosure, and the scope of the present disclosure is determined by the appended claims. All documents described herein are incorporated herein by reference, including any priority documents and / or testing procedures to the extent not inconsistent with this document. It is apparent from the foregoing general description and specific embodiments that, although the forms of the present disclosure have been illustrated and described, various modifications may be implemented without departing from the spirit and scope of the present disclosure. Therefore, it is not intended to limit the present disclosure thereby. Similarly, with respect to U.S. law, the term "comprising" is considered synonymous with the term "including." Similarly, whenever the transition phrase "comprising" is used before a composition, an element, or a group of elements, it should be understood that the same composition or group of elements as the transition phrase "consisting essentially of," "consisting of," "selected from a group consisting of," or "is" is used before the description of the composition, element, or multiple elements, and vice versa.

[0055] Certain embodiments and features have been described using a set of numerical upper limits and a set of numerical lower limits. It should be understood that, unless otherwise indicated, ranges including combinations of any two values ​​are contemplated, such as any lower value combined with any higher value, any two lower values ​​combined, and / or any two higher values ​​combined. Certain lower limits, upper limits, and ranges appear in one or more of the claims appended hereto.

Claims

1. A method comprising: generating a plasma within a plasma cell in fluid communication with the process chamber, wherein the plasma cell includes a faceplate and an ion blocker separated by an ion suppressor; flowing the plasma through the ion suppressor to generate an activated fluid comprising reactive species and neutral species, wherein the activated fluid has an ion concentration that is 50% to 99% less than an ion concentration of the plasma; allowing the activation fluid to flow into a first inlet of a dual-channel showerhead within the process chamber; allowing a silicon precursor to flow into the second inlet of the dual-channel showerhead; allowing the mixture of the activation fluid and the silicon precursor to flow out from the dual-channel showerhead; and An amorphous silicon layer is formed on a substrate disposed in the process chamber. 2 . The method of claim 1 , further comprising flowing a dopant precursor into the dual channel showerhead, wherein the dopant precursor comprises a boron-containing precursor, a phosphorus-containing precursor, or any combination thereof.

3. The method according to claim 2, wherein The dopant precursor includes the boron-containing precursor, and wherein the boron-containing precursor includes diborane, triborane, trialkylborane, triallylborane, or any combination thereof.

4. The method according to claim 2, wherein The dopant precursor includes the phosphorus-containing precursor, and wherein the phosphorus-containing precursor includes phosphine, phosphorus oxychloride, an alkyl phosphite, or any combination thereof.

5. The method according to claim 1, wherein The silicon precursor includes silane, disilane, trisilane, trisilylamine (TSA), disilylamine (DSA), fluorosilane (SiF x H 4-x ), chlorosilane (SiCl x H 4-x ) or any combination of the above, wherein x is an integer of 1, 2, 3 or 4.

6. The method of claim 1, further comprising flowing a carrier gas through the plasma cell, wherein the carrier gas comprises argon, helium, nitrogen, hydrogen, or any combination thereof.

7. The method according to claim 1, wherein The plasma unit includes a capacitively coupled plasma (CCP) unit or an electron beam.

8. A method comprising: generating a plasma within a plasma cell in fluid communication with the process chamber, wherein the plasma cell includes a faceplate and an ion blocker separated by an ion suppressor; flowing the plasma through the ion suppressor to generate an activated fluid comprising reactive species and neutral species, wherein the activated fluid has an ion concentration that is 50% to 99% less than an ion concentration of the plasma; flowing the activation fluid, the silicon precursor, and the dopant precursor into a dual-channel showerhead to produce a mixture of the activation fluid, the silicon precursor, and the dopant precursor; allowing a mixture of the activation fluid, the silicon precursor, and the dopant precursor to flow out of the dual-channel showerhead; and A substrate disposed in the process chamber is exposed to the mixture to form an amorphous silicon layer on the substrate.

9. The method according to claim 8, wherein The dopant precursor includes a boron-containing precursor, a phosphorus-containing precursor, or any combination thereof.

10. The method according to claim 8, wherein The dopant precursor comprises a boron-containing precursor, and wherein the boron-containing precursor comprises diborane, triborane, trialkylborane, triallylborane, a boron halide, or any combination thereof.

11. The method according to claim 8, wherein The dopant precursor comprises a phosphorus-containing precursor, and wherein the phosphorus-containing precursor comprises phosphine, phosphorus oxychloride, an alkyl phosphite, or any combination thereof.

12. The method according to claim 8, wherein The silicon precursor includes silane, disilane, trisilane, trisilylamine (TSA), disilylamine (DSA), fluorosilane (SiF x H 4-x ), chlorosilane (SiCl x H 4-x ) or any combination of the above, wherein x is an integer of 1, 2, 3 or 4.

13. The method of claim 8, further comprising flowing a carrier gas through the plasma cell, wherein the carrier gas comprises argon, helium, nitrogen, hydrogen, or any combination thereof.

14. The method according to claim 8, wherein The plasma unit includes a capacitively coupled plasma (CCP) unit or an electron beam.

15. A method comprising: generating a plasma within an electron beam unit in fluid communication with the process chamber, wherein the electron beam unit includes a faceplate and an ion blocker separated by an ion suppressor; flowing the plasma through the ion suppressor to generate an activated fluid comprising reactive species and neutral species, wherein the activated fluid has an ion concentration that is 50% to 99% less than an ion concentration of the plasma; allowing the activation fluid and the silicon precursor to flow into a dual-channel showerhead to produce a mixture of the activation fluid and the silicon precursor; allowing the mixture of the activation fluid and the silicon precursor to flow out from the dual-channel showerhead; and A substrate disposed in the process chamber is exposed to the mixture to form an amorphous silicon layer on the substrate.

16. The method of claim 15, further comprising flowing a dopant precursor into the dual channel showerhead, wherein the dopant precursor comprises a boron-containing precursor, a phosphorus-containing precursor, or any combination thereof.

17. The method according to claim 16, wherein The silicon precursor includes silane, disilane, trisilane, trisilylamine (TSA), disilylamine (DSA), fluorosilane (SiF x H 4-x ), chlorosilane (SiCl x H 4-x ) or any combination of the above, wherein x is an integer of 1, 2, 3 or 4.

18. The method according to claim 16, wherein The dopant precursor comprises a boron-containing precursor, and wherein the boron-containing precursor comprises diborane, triborane, trialkylborane, triallylborane, a boron halide, or any combination thereof.

19. The method according to claim 16, wherein The dopant precursor comprises a phosphorus-containing precursor, and wherein the phosphorus-containing precursor comprises phosphine, phosphorus oxychloride, an alkyl phosphite, or any combination thereof.

20. The method of claim 15, further comprising flowing a carrier gas through the electron beam unit, wherein the carrier gas comprises argon, helium, nitrogen, hydrogen, or any combination thereof.

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