A preparation method of SIC based ohmic contacts with ultra-high heat dissipation performance

A technology of heat dissipation performance and ohmic contact, which is applied in the field of SiC-based ohmic contact preparation, can solve the problem of sacrificing specific contact resistivity, achieve good high-temperature electrical performance, and reduce the effect of specific contact resistivity

CN112054053BActive Publication Date: 2022-03-01XIDIAN UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Publication Date
2022-03-01

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Abstract

The invention discloses a method for preparing a SiC-based ohmic contact with ultra-high heat dissipation performance, comprising: selecting a SiC substrate; epitaxially growing graphene on the front side of the SiC substrate to form a graphene / SiC structure; Au film is deposited on the graphene; Ni metal is sputtered on the back of the SiC substrate to form the back electrode; the first transfer electrode pattern is formed on the Au film by photolithography; the Au not covered by the first transfer electrode pattern is etched away film; etch off the graphene not covered by the Au film; form the second transfer electrode pattern on the Au film by photolithography; etch the Au film not covered by the second transfer electrode pattern; deposit on the Au film Au material forms the front electrode and is annealed. The method of the present invention is a feasible preparation scheme. Compared with the traditional ohmic contact structure, the high-temperature electrical performance is better and more stable, and the specific contact resistivity can reach 10. ‑7 ~10 ‑8 order of magnitude.
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Description

technical field

[0001] The invention belongs to the technical field of SiC-based ohmic contacts, and in particular relates to a preparation method of SiC-based ohmic contacts with ultra-high heat dissipation performance. Background technique

[0002] In the field of integrated circuit manufacturing, the preparation of ohmic contacts is an essential key process. In recent years, due to the demand for the application of semiconductor devices under high temperature conditions, researchers have continued to study the heat dissipation capability and thermal stability of devices.

[0003] In the application environment of integrated circuits, there are many high-power situations such as engines, which tend to generate a lot of heat and increase the operating temperature of the device. At the same time, as the chip integration becomes higher and higher, the heat consumption becomes larger and larger. The high-temperature working environment will lead to deviation of device perfor...

Examples

Embodiment 1

[0046] In order to achieve the purpose of improving the heat dissipation performance and high temperature stability of the ohmic contact structure without sacrificing the specific contact resistivity as much as possible, please refer to figure 1 , Figure 2a ~ Figure 2h , figure 1 It is a schematic flow chart of a method for preparing a SiC-based ohmic contact with ultra-high heat dissipation performance provided by an embodiment of the present invention, Figure 2a ~ Figure 2h It is a schematic structural diagram of a method for preparing a SiC-based ohmic contact with ultra-high heat dissipation performance provided by an embodiment of the present invention. This embodiment provides a method for preparing a SiC-based ohmic contact with ultra-high heat dissipation performance. The method for preparing a SiC-based ohmic contact with ultra-high heat dissipation performance includes the following steps:

[0047] Step 1. Select a SiC substrate.

[0048] Specifically, the SiC s...