Display Devices

Abstract

A display device is provided. The display device includes: a substrate; a semiconductor layer disposed on the substrate and including a source region, a drain region, and a channel region; a first insulating layer disposed on the semiconductor layer; a gate line disposed on the first insulating layer in a first direction and overlapping the channel region; a second insulating layer disposed on the gate line; a data line disposed on the second insulating layer in a second direction crossing the first direction and contacting a portion of the source region; a third insulating layer disposed on the data line; a drain electrode disposed on the third insulating layer and contacting the drain region through a contact hole formed in the first insulating layer, the second insulating layer, and the third insulating layer; a first protective electrode disposed on the drain electrode to overlap the drain electrode; a fourth insulating layer disposed on the third insulating layer on which the first protective electrode is formed; and a pixel electrode disposed on the fourth insulating layer and contacting the first protective electrode through a contact hole formed in the fourth insulating layer.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2019-0074308, filed on June 21, 2019, in the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present disclosure relates to a display device and a method for manufacturing the display device. Background Art

[0004] As a result of the development of multimedia technology, the importance of display devices has been increasing. Therefore, various types of display devices are currently being used, for example, liquid crystal display (LCD) devices and organic light emitting display (OLED) devices.

[0005] Among display devices, LCD devices are one of the most widely used flat panel display devices. The LCD device is composed of two substrates on which electrodes such as pixel electrodes and common electrodes are formed to generate an electric field, and a liquid crystal layer is placed between the two substrates. Voltage is applied to the electrodes to form an electric field in the liquid crystal layer, so that the orientation of liquid crystal molecules contained in the liquid crystal layer is changed and the polarization of incident light is controlled to display an image.

[0006] Recently, as the resolution of liquid crystal displays increases, the physical distances between various signal lines tend to become closer and closer. Different signal lines can be arranged in different layers, and insulating layers are placed between different signal lines to prevent physical and electrical interference between different signal lines. Signal lines can be connected to lines arranged in different layers through contact holes.

[0007] It should be understood that this background section is intended in part to provide a useful background for understanding the technology. However, this background section may also include ideas, concepts or realizations that were not part of the known or understood part of a person skilled in the relevant art before the corresponding effective filing date of the subject matter disclosed herein. Summary of the invention

[0008] Aspects of the present disclosure provide a display device that improves image quality by forming a protection layer on a signal line and, for example, forming a protection electrode over a drain electrode.

[0009] However, aspects of the present disclosure are not limited to the aspects set forth herein. The above and other aspects of the present disclosure will become more apparent to those skilled in the art to which the present disclosure pertains by referring to the detailed description of the present disclosure given below.

[0010] According to one or more embodiments, a display device includes: a substrate; a semiconductor layer, arranged on the substrate and including a source region, a drain region and a channel region; a first insulating layer, arranged on the semiconductor layer; a gate line, arranged on the first insulating layer in a first direction and overlapping with the channel region; a second insulating layer, arranged on the gate line; a data line, arranged on the second insulating layer in a second direction crossing the first direction and contacting with a portion of the source region; a third insulating layer, arranged on the data line; a drain electrode, arranged on the third insulating layer and contacting with the drain region through a contact hole formed in the first insulating layer, the second insulating layer and the third insulating layer; a first protective electrode, arranged on the drain electrode to overlap with the drain electrode; a fourth insulating layer, arranged on the third insulating layer on which the first protective electrode is formed; and a pixel electrode, arranged on the fourth insulating layer and contacting with the first protective electrode through a contact hole formed in the fourth insulating layer.

[0011] The first protection electrode may be made of the same material as the pixel electrode.

[0012] The first protection electrode may be made of a transparent conductive material including at least one of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (ITZO), and aluminum zinc oxide (AZO).

[0013] The first protection electrode may be in physical contact with the pixel electrode, and the drain electrode may be in electrical contact with the pixel electrode.

[0014] The first protection electrode may be in electrical contact with the pixel electrode, and the drain electrode may be in electrical contact with the pixel electrode.

[0015] The drain electrode may include a triple layer of Ti / Al / Ti in which titanium is stacked on and under aluminum.

[0016] The drain electrode and the first protection electrode may not overlap the data line in a third direction crossing the first direction and the second direction.

[0017] The data line may contact the source region through another contact hole formed in the first insulating layer and the second insulating layer.

[0018] The display device may further include: a color filter layer arranged on the third insulating layer formed with the drain electrode and the first protective electrode and not overlapping with the contact holes formed in the first insulating layer, the second insulating layer and the third insulating layer, and the pixel electrode may be arranged on the color filter layer.

[0019] The display device may further include: a second protection electrode disposed between the fourth insulating layer and the pixel electrode, and the second protection electrode may extend from an end of the color filter layer to a portion of the contact hole adjacent to the end of the color filter layer.

[0020] The second guard electrode may be made of the same material as the first guard electrode.

[0021] The display device may further include an organic layer disposed on the fourth insulating layer and the pixel electrode.

[0022] An upper surface of the organic layer may be substantially coplanar with an upper surface of the color filter layer.

[0023] The gate line may extend in a first direction and may be bent in at least one direction to bypass the first protection electrode on a plane.

[0024] The gate line may include a first portion substantially parallel to the first direction, a second portion substantially parallel to the first direction and spaced apart from the first portion, and a third portion connecting the first portion with the second portion.

[0025] The display device may further include: a light shielding layer disposed on the substrate and overlapping the semiconductor layer; and a buffer layer disposed on the light shielding layer, wherein the semiconductor layer is disposed on the buffer layer.

[0026] The substrate may include a light-shielding region in which the light-shielding layer is disposed and a light-transmitting region in which the light-shielding layer is not disposed.

[0027] According to one or more embodiments, a method for manufacturing a display device includes: forming a semiconductor layer including a source region, a drain region and a channel region on a substrate; forming a first insulating layer on the semiconductor layer; forming a gate line on the first insulating layer in a first direction, the gate line overlapping the channel region; forming a second insulating layer on the gate line; forming a data line on the second insulating layer in a second direction intersecting the first direction, the data line contacting a portion of the source region; forming a third insulating layer on the data line; forming a contact hole in the first insulating layer, the second insulating layer and the third insulating layer to expose the drain region; forming a drain electrode on the third insulating layer, the drain electrode contacting the drain region exposed through the contact hole; forming a first protective electrode on the drain electrode to overlap with the drain electrode; forming a fourth insulating layer on the third insulating layer on which the first protective electrode is formed; forming a contact hole in the fourth insulating layer to expose the first protective electrode; and forming a pixel electrode on the fourth insulating layer, the pixel electrode contacting the first protective electrode exposed through the contact hole.

[0028] The first protection electrode may be formed by the same photolithography process as the drain electrode.

[0029] The first protection electrode may be formed by wet etching, and the drain electrode may be formed by dry etching.

[0030] The method for manufacturing a display device may further include: forming a color filter layer on the third insulating layer having a drain electrode and a first protective electrode, the color filter layer not overlapping with the contact holes in the first insulating layer, the second insulating layer and the third insulating layer, and the pixel electrode may be arranged on the color filter layer.

[0031] The method of manufacturing a display device may further include: forming a second protective electrode between the fourth insulating layer and the pixel electrode, wherein the second protective electrode may be arranged between an end of the color filter layer and a portion of a contact hole formed in the fourth insulating layer adjacent to the end of the color filter layer.

[0032] According to an embodiment of the present disclosure, the image quality of a display device may be improved by forming a protective layer on a signal line.

[0033] It should be noted that the effects of the present disclosure are not limited to those described above, and other effects of the present disclosure will be apparent to those skilled in the art from the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Additional understanding according to embodiments of the present disclosure will become more apparent by describing the embodiments of the present disclosure in detail with reference to the accompanying drawings, in which:

[0035] Figure 1 is a plan view schematically showing the layout of a pixel region and region A of a display device.

[0036] Figure 2 is a plan view of a single pixel of a display device according to an embodiment of the present disclosure.

[0037] Figure 3 is based on Figure 2 0 is a schematic cross-sectional view of a display device of the embodiment shown in , taken along line III-III′.

[0038] Figure 4A is based on Figure 2 0 is a schematic cross-sectional view of a display device of the embodiment shown in , taken along line IV-IV′.

[0039] Figure 4B is based on Figure 2 0 is a schematic cross-sectional view of a display device of the embodiment shown in , taken along line III-III′.

[0040] Figures 5 to 15 It is a graphic manufacturing Figures 1 to 4A A schematic cross-sectional view of a method of displaying a device as shown in FIG. 1 and illustrating, for example, the processing steps along the Figure 2 A schematic cross-sectional view taken along line IV-IV.

[0041] Fig.16 is based on Figure 2 0 is a schematic cross-sectional view of a display device of another embodiment shown in , taken along line III-III′.

[0042] Figures 17 to 19 It is a graphic manufacturing Fig.16 The method of the display device shown in FIG. 1 is a schematic cross-sectional view of the method, and for example, illustrates the processing steps along the Figure 2 A schematic cross-sectional view taken along line III-III'. DETAILED DESCRIPTION

[0043] In the following description, for the purpose of explanation, many details are set forth in order to provide a thorough understanding of various embodiments or implementations. As used herein, "embodiment" and "implementation" are interchangeable words for non-limiting examples of devices or methods using one or more inventive concepts disclosed herein. However, it is apparent that various embodiments can be practiced without these noted details or with one or more equivalent configurations. In other examples, known structures and devices can be shown in block diagram form to avoid unnecessarily obscuring various embodiments. Various embodiments can be different, but do not have to be exclusive. For example, without departing from the inventive concept and spirit and scope of the present invention, the shape, configuration and characteristics of the embodiment can be used or implemented in another embodiment.

[0044] Unless otherwise specified, the illustrated embodiments should be understood as providing various detailed features of some ways in which the inventive concept can be implemented in practice. Therefore, unless otherwise specified, the features, components, modules, layers, films, panels, regions and / or aspects, etc. (hereinafter individually or collectively referred to as "elements") of the various embodiments may be combined, separated, interchanged and / or reconfigured in other ways without departing from the inventive concept and spirit and scope of the present invention.

[0045] The use of cross-hatching and / or shading in the drawings is generally provided to clarify the boundaries between adjacent elements. Therefore, unless specified, the presence or absence of cross-hatching or shading cannot convey or indicate any preference or requirement for a specific material, material property, size, ratio, commonality between the illustrated elements and / or any other characteristics, attributes, properties, etc. of the elements. Further, in the drawings, the size and relative size of the elements may be exaggerated for clarity and / or descriptive purposes. When the embodiments may be implemented differently, the process may be performed in an order different from the described order. For example, two processes described in succession may be performed substantially simultaneously or in an order opposite to the described order. In addition, the same reference numerals refer to the same elements.

[0046] When an element such as a layer is referred to as "on" another element or layer, "connected to" or "coupled to" another element or layer, the element may be directly on, connected to or coupled to another element or layer, or there may be an intermediate element or layer. However, when an element or layer is referred to as "directly on" another element or layer, "directly connected to" or "directly coupled to" another element or layer, there is no intermediate element or layer. For this reason, the term "connection" may refer to a physical, electrical and / or fluid connection with or without an intermediate element. Further, the X-axis, Y-axis and Z-axis are not limited to the three axes of a rectangular coordinate system, such as an x-axis, a y-axis and a z-axis, and may be interpreted in a broader sense. For example, the X-axis, the Y-axis and the Z-axis may be perpendicular to each other, or may represent different directions that are not perpendicular to each other. For the purpose of this disclosure, "at least one of X, Y and Z" and "at least one selected from the group consisting of X, Y and Z" may be interpreted as any combination of only X, only Y, only Z or two or more of X, Y and Z, such as XYZ, XYY, YZ and ZZ. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0047] Although the terms "first", "second", etc. may be used herein to describe various types of elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another element. Therefore, without departing from the teachings of the present disclosure, the first element discussed below may be referred to as the second element.

[0048] For descriptive purposes, spatially relative terms such as "below," "beneath," "under," "below," "above," "upper," "above," "higher," "side" (e.g., in a "sidewall"), etc. may be used herein and, thereby, describe the relationship of one element to another element as illustrated in the accompanying drawings. In addition to the orientations depicted in the accompanying drawings, spatially relative terms are intended to cover different orientations of the device in use, operation, and / or manufacture. For example, if the device in the accompanying drawings is flipped, an element described as being "below" or "below" other elements or features will then be positioned as being "above" the other elements or features. Thus, the exemplary term "below" can cover both above and below orientations. In addition, the device can be positioned otherwise (e.g., rotated 90 degrees or positioned in other orientations), and, therefore, the spatially relative descriptors used herein are interpreted accordingly.

[0049] The term used herein is for the purpose of describing various embodiments, and is not intended to limit. As used herein, the singular "one" and "the" are intended to also include plural forms, unless the context clearly indicates otherwise. In addition, when used in this specification, the term "includes" and / or "comprising" specifies the existence of stated features, integers, steps, operations, elements, parts and / or its groups, but does not exclude the existence or addition of one or more other features, integers, steps, operations, elements, parts and / or its groups. It should also be noted that, as used herein, the term "substantially", "approximately" and other similar terms are used as approximate terms rather than degree terms, and therefore, are utilized to consider that those of ordinary skill in the art will recognize the inherent deviation of the value measured, calculated and / or provided.

[0050] Various embodiments are described herein with reference to cross-sectional illustrations and / or exploded illustrations as schematic illustrations of idealized embodiments and / or intermediate structures. Thus, variations in the illustrated shapes as a result of, for example, manufacturing techniques and / or tolerances may be expected. Therefore, the embodiments disclosed herein need not be construed as limited to the specific illustrated shapes of the regions, but should include deviations in shape resulting from, for example, manufacturing. In this manner, the regions illustrated in the drawings may be schematic in nature, and the shapes of these regions may not reflect the actual shapes of the regions of the device, and therefore need not be intended to be limiting.

[0051] As is customary in the art, some embodiments are described and illustrated in the accompanying drawings from the perspective of functional blocks, units and / or modules. It will be appreciated by those skilled in the art that these blocks, units and / or modules are physically implemented by electronic (or optical) circuits (such as logic circuits, discrete components, microprocessors, hard-wired circuits, memory elements, wiring connections, etc. that can be formed using semiconductor-based manufacturing techniques or other manufacturing techniques). In the case where blocks, units and / or modules are implemented by microprocessors or other similar hardware, software (e.g., microcode) can be used to program and control blocks, units and / or modules to perform the various functions discussed herein, and can be optionally driven by firmware and / or software. It is also contemplated that each block, unit and / or module can be implemented by dedicated hardware, or implemented as a combination of dedicated hardware that performs some functions and processors (e.g., one or more programmed microprocessors and associated circuits) that perform other functions. In addition, each block, unit and / or module of some embodiments can be physically divided into two or more interactive and discrete blocks, units and / or modules without departing from the spirit and scope of the inventive concept. Furthermore, the blocks, units and / or modules of some embodiments may be physically combined into more complex blocks, units and / or modules without departing from the spirit and scope of the inventive concept.

[0052] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as those commonly understood by those of ordinary skill in the art to which the present disclosure belongs. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and should not be interpreted in an idealized or overly formal sense, unless specifically defined as such herein.

[0053] Figure 1 is a plan view schematically showing the layout of a pixel region and region A of a display device. Figure 2 is a plan view of a single pixel of a display device according to an embodiment of the present disclosure. Figure 3 yes Figure 2 0 is a schematic cross-sectional view of the display device shown in taken along line III-III'. Figure 4A It is along Figure 2 A schematic cross-sectional view taken along line IV-IV'.

[0054] refer to Figures 1 to 4A , the display device 1 according to the embodiment of the present disclosure may include a first display substrate 100, a second display substrate 200 facing the first display substrate 100, and a liquid crystal layer 300 disposed between the first display substrate 100 and the second display substrate 200. Although not shown, the display device 1 may include a polarization unit. The polarization unit may be implemented as an element separated from the first display substrate 100 or the second display substrate 200. The display device 1 according to the embodiment of the present disclosure may include a backlight unit placed under the first display substrate 100. However, the display device 1 is not limited to a liquid crystal display device, and may be, for example, an organic light emitting display device.

[0055] The first display substrate 100 includes a pixel area PX and an area A in which an organic layer 130 may be arranged. The organic layer 130 will be described in detail later. A portion of each of the pixel areas PX may overlap with the area A. Another portion of each of the pixel areas PX that does not overlap with the area A may include a light-transmitting area TA through which light passes. The term overlap may include a layer, a stack, facing or facing, extending over, covering or partially covering, or any other suitable term as appreciated and understood by a person of ordinary skill in the art. The term "non-overlapping" may include "spaced apart" or "separated" or "deviation" and any other suitable equivalents as appreciated and understood by a person of ordinary skill in the art.

[0056] The first display substrate 100 may be an array substrate on which elements for driving liquid crystal molecules in the liquid crystal layer 300 , for example, switching elements such as thin film transistors, may be formed.

[0057] The second display substrate 200 may be a substrate facing the first display substrate 100 , for example, a counter substrate.

[0058] Hereinafter, the first display substrate 100 will be described.

[0059] The first substrate 110 may be an insulating substrate, and the insulating substrate may be transparent. For example, the first substrate 110 may be a glass substrate, a quartz substrate, a transparent resin substrate, etc., or any other suitable material. The first substrate 110 may include a highly heat-resistant polymer or plastic. In some embodiments, the first substrate 110 may be flexible. For example, the first substrate 110 may be deformable so that the first substrate 110 can be rolled up, folded, bent, etc.

[0060] For example, the flexible transparent insulating material may include polyimide (PI) resin, polyetherimide (PEI) resin, polyethylene terephthalate (PET) resin, polycarbonate (PC) resin, polymethyl methacrylate (PMMA) resin, polystyrene (PS) resin, styrene-acrylonitrile copolymer (SAN) resin, and silicon-acrylic resin.

[0061] The first substrate 110 may include a light-transmitting area TA and a light-blocking area BA. In the light-transmitting area TA, light provided from a backlight unit (not shown) located or arranged under the first substrate 110 may be transmitted to display an image. In the light-blocking area BA, light provided from the backlight unit may be blocked.

[0062] The light shielding layer 220 may be disposed on the first substrate 110. The light shielding layer 220 may block or absorb light introduced from the outside, and may overlap the light shielding area BA of the first substrate 110.

[0063] The light shielding layer 220 may be made of an opaque metal, for example, a metal or an alloy thereof that absorbs light, and may have a black-based color. For example, the light shielding layer 220 may be one of molybdenum (Mo), chromium (Cr), titanium (Ti), niobium (Nb), manganese (Mn), and tantalum (Ta), or an alloy thereof. However, it should be understood that the embodiments of the present disclosure are not limited thereto. Any metal that can absorb light may be adopted as the light shielding layer 220.

[0064] The buffer layer 181 covering the light shielding layer 220 may be disposed on the first substrate 110. The buffer layer 181 may prevent the penetration of impurity elements and may provide a flat surface. The buffer layer 181 may be formed of any of a variety of materials as long as the material can achieve the above-mentioned effects. For example, the buffer layer 181 may be made of a material selected from silicon nitride (SiN x ), silicon oxide (SiO 2 ) and silicon oxynitride (SiO x Ny ) is made from at least one of the group consisting of ).

[0065] The semiconductor layer 154 may be arranged on the buffer layer 181. The semiconductor layer 154 may overlap with the light shielding layer 220, and thus, the light shielding layer 220 may block the light introduced into the semiconductor layer 154, and may prevent leakage current caused by the light additionally introduced into the semiconductor layer 154. The semiconductor layer 154 may be made of a semiconductor material, which is at least one selected from the group consisting of polycrystalline silicon, amorphous silicon, and an oxide semiconductor. The semiconductor layer 154 includes a channel region 154A not doped with impurities, and a source region 154S and a drain region 154D formed by doping impurities on both sides of the channel region 154A. The impurity may be an n-type impurity or a p-type impurity, and may vary according to the type of the thin film transistor.

[0066] A first insulating layer 183 covering the semiconductor layer 154 may be disposed on the semiconductor layer 154. The first insulating layer 183 may be used to insulate the semiconductor layer 154 from a gate line 121 to be described later. The first insulating layer 183 may include a silicon nitride (SiN x ), silicon oxide (SiO 2 ), silicon oxynitride (SiO x N y ) and tetraethyl orthosilicate (TEOS), and can be made of a single layer or a multilayer.

[0067] like Figure 3 As shown in , the gate line 121 can be arranged on the first insulating layer 183. The gate line 121 sends a gate signal and can extend approximately in one direction. In the following description, for ease of illustration, the gate line 121 can extend in a horizontal direction or a first direction D1. As used herein, the expression that the gate line 121 extends in the first direction D1 covers: the gate line 121 can be completely parallel to the first direction D1, and even if some parts of the gate line 121 are not parallel to the first direction D1, the gate line 121 has directionality and can extend approximately in parallel with the first direction D1. The gate electrode can protrude from the gate line 121 and can be connected to the gate line 121. In some embodiments, the gate line 121 may include aluminum-based metals such as aluminum (Al) and aluminum alloys, silver-based metals such as silver (Ag) and silver alloys, copper-based metals such as copper (Cu) and copper alloys, molybdenum-based metals such as molybdenum (Mo) and molybdenum alloys, chromium (Cr), tantalum (Ta), titanium (Ti), etc.

[0068] The gate line 121 may extend in the first direction D1 and may be bent in at least one direction on a plane. The gate line 121 may include a first portion 121a extending substantially in parallel with the first direction D1, a second portion 121b extending substantially in parallel with the first direction D1 and spaced apart from the first portion 121a, and a third portion 121c connecting the first portion 121a with the second portion 121b. For example, the first portion 121a of the gate line 121 may extend in the first direction D1, the third portion 121c may be bent from the first portion 121a or the second portion 121b to extend in the second direction D2, and the second portion 121b may be bent from the third portion 121c to extend in the first direction D1. Therefore, the gate line 121 may extend in the first direction D1 and may bypass the first protective electrode 166, the drain electrode 165, or the second contact hole CH2 on a plane. In some embodiments, the third portion 121c may overlap with the first data line 171a or the second data line 171b, which will be described later.

[0069] The gate line 121 may extend in the first direction D1 and overlap the channel region 154A of the semiconductor layer 154. Although the second portion 121b of the gate line 121 overlaps the channel region 154A of the semiconductor layer 154 in the drawings, the present disclosure is not limited thereto. The first portion 121a may overlap the channel region 154A of the semiconductor layer 154. The portion of the gate line 121 overlapping the channel region 154A of the semiconductor layer 154 may be used as a gate electrode of a thin film transistor, which will be described later.

[0070] The second insulating layer 185 may be disposed on the gate line 121. The second insulating layer 185 may be made of an insulating material. For example, the insulating material may be a layer such as silicon nitride (SiN x ), silicon oxide (SiO 2 ) and silicon oxynitride (SiO x N y ) of inorganic materials.

[0071] A first contact hole CH1 exposing the source region 154S of the semiconductor layer 154 may be formed in the first insulating layer 183 and the second insulating layer 185 .

[0072] The first and second data lines 171a and 171b extending in the second direction D2 crossing the gate line 121 may be disposed on the second insulating layer 185. A data voltage may be applied to the first and second data lines 171a and 171b.

[0073] The first data line 171a may be formed by stacking two or more different types of metal layers having different electron mobilities. For example, the first data line 171a may be formed by stacking two or more metal layers selected from the group consisting of aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), copper (Cu), and alloys thereof.

[0074] At least a portion of the first data line 171a may directly contact and be electrically connected to the source region 154S exposed through the first contact hole CH1 of the semiconductor layer 154. The first data line 171a contacting the source region 154S may function as a source electrode of the thin film transistor.

[0075] The third insulating layer 187 may be disposed on the first data line 171a, the second data line 171b, and the second insulating layer 185. The third insulating layer 187 may be made of an insulating material. For example, the insulating material may be silicon nitride (SiN x ), silicon oxide (SiO 2 ) and silicon oxynitride (SiO x N y ) of inorganic materials.

[0076] like Figure 3 As shown in FIG. 1 , a second contact hole CH2 exposing the drain region 154D of the semiconductor layer 154 may be formed in the first insulating layer 183, the second insulating layer 185, and the third insulating layer 187. When viewed from the top, the gate line 121 may be substantially located or arranged between the first contact hole CH1 and the second contact hole CH2, and the first contact hole CH1 may be spaced apart from the second contact hole CH2 in a second direction D2 crossing the first direction D1, while the gate line 121 is between the first contact hole CH1 and the second contact hole CH2.

[0077] The drain electrode 165 may be disposed in the second contact hole CH2. The drain electrode 165 may be physically / electrically connected to the drain region 154D of the semiconductor layer 154 exposed through the second contact hole CH2. The drain electrode 165 and the first data line 171a may be spaced apart from each other in the first direction D1 when viewed from the top.

[0078] The drain electrode 165 may be formed by stacking two or more different types of metal layers having different electron mobilities. For example, the drain electrode 165 may be formed by stacking two or more metal layers selected from the group consisting of aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), copper (Cu) and alloys thereof. According to an embodiment of the present disclosure, the drain electrode 165 may be implemented as a triple layer of Ti / Al / Ti in which titanium is stacked on and under aluminum.

[0079] The first protection electrode 166 may be disposed on the drain electrode 165. According to an embodiment of the present disclosure, a metal layer for forming the drain electrode 165 may be deposited, and the first protection electrode 166 may be deposited. A single mask may be used to pattern the drain electrode 165 and the first protection electrode 166. The first protection electrode 166 may be made of a material selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium zinc tin oxide (IZTO), indium oxide (In 2 O 3 The first protection electrode 166 may be made of at least one of the transparent conductive oxides selected from the group consisting of indium gallium oxide (IGO) and aluminum zinc oxide (AZO). According to an embodiment of the present disclosure, the first protection electrode 166 may be indium tin oxide (ITO).

[0080] The fourth insulating layer 189, which will be described later, may be arranged on the first protective electrode 166. The drain electrode 165 may be exposed via the third contact hole CH3 formed in the fourth insulating layer 189 to be electrically connected to the pixel electrode 190, which will be described later. Since it is arranged on the drain electrode 165, the first protective electrode 166 may prevent damage to the drain electrode 165 during the process of forming the third contact hole CH3 in the fourth insulating layer 189. According to an embodiment of the present disclosure, the third contact hole CH3 of the fourth insulating layer 189 may be formed by dry etching. Since the first protective electrode 166 formed of a transparent conductive oxide may have a strong durability against dry etching, the drain electrode 165 arranged under the first protective electrode 166 may be prevented from being etched. Therefore, the contact between the drain electrode 165 and the pixel electrode 190 may be ensured, thereby improving the reliability of the display device 1.

[0081] like Figure 3 As shown in , the color filter layer 160 may be arranged on the third insulating layer 187. In an embodiment, the color filter layer 160 may display one of the primary colors such as red, green and blue. It should be noted that the three primary colors are not limited to red, green and blue, and may also include cyan, magenta, yellow and one of the colors based on white.

[0082] The color filter layer 160 may not overlap with the second contact hole CH2 and may be spaced apart from the second contact hole CH2 in the second direction D2 . The color filter layer 160 may overlap with a portion of the light shielding layer 220 .

[0083] The color filter layer 160 may include an organic material. The color filter layer 160 may be thicker than other layers. For example, a level difference may occur between an upper surface of the color filter layer 160 and an upper surface of the third insulating layer 187.

[0084] Although not shown in the drawings, an interlayer insulating film may be disposed on the drain electrode 165. When the interlayer insulating film is placed on the drain electrode 165, the color filter layer 160 may be located or disposed on the interlayer insulating film.

[0085] The fourth insulating layer 189 may be disposed on the third insulating layer 187, the first protective electrode 166, and the color filter layer 160. The fourth insulating layer 189 may include an inorganic material. For example, the fourth insulating layer 189 may include silicon nitride (SiN x ), silicon oxide (SiO x ), aluminum oxide (AlO x ), titanium oxide (TiO x ) and the like. However, it should be understood that the present disclosure is not limited thereto. The fourth insulating layer 189 can be implemented as an organic insulating layer. For example, the fourth insulating layer 189 can include general polymers such as polymethyl methacrylate (PMMA) and polystyrene (PS), polymer derivatives with phenol groups, acrylic polymers, imide polymers, aryl ether polymers, amide polymers, fluorinated polymers, p-xylene polymers, vinyl alcohol polymers, and blends thereof. The fourth insulating layer 189 and other insulating layers 183, 185, and 187 described above can be made of any suitable material as will be appreciated by those of ordinary skill in the art. The fourth insulating layer 189 can prevent moisture and / or oxygen penetration.

[0086] The pixel electrode 190 may be disposed on the fourth insulating layer 189. The pixel electrode 190 may be disposed to overlap the light-transmitting area TA and the light-blocking area BA. The pixel electrode 190 may be physically / electrically connected to the first protection electrode 166 through the third contact hole CH3, and may be electrically connected to the drain electrode 165.

[0087] The pixel electrode 190 may be formed of the same material or a similar material as the first protective electrode 166. For example, the pixel electrode 190 may be formed of a material selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium zinc tin oxide (IZTO), indium oxide (In 2 O 3), indium gallium oxide (IGO), and aluminum zinc oxide (AZO). Therefore, the contact between the drain electrode 165 and the pixel electrode 190 can be ensured, thereby improving the reliability of the display device 1.

[0088] like Figure 2 As shown in , the pixel electrode 190 may be arranged between the first data line 171a and the second data line 171b, and may not overlap with the first data line 171a and the second data line 171b. However, it should be understood that the present disclosure is not limited thereto. At least a portion of the pixel electrode 190 may overlap with the first data line 171a and / or the second data line 171b.

[0089] The organic layer 130 may be disposed on the fourth insulating layer 189. The organic layer 130 may be disposed on substantially the entire region except for the light-transmitting region TA. Figure 3 As shown in FIG. 1 , the organic layer 130 may be arranged to cover most of the light blocking area BA.

[0090] In a cross-sectional view, the organic layer 130 may partially overlap the color filter layer 160. The organic layer 130 may be arranged to provide a flat surface above the level difference that occurs through the color filter layer 160, and may be arranged to cover the side surface of the color filter layer 160. The upper surface of the organic layer 130 and the upper surface of the color filter layer 160 may be arranged on substantially a single plane. For example, the distance from the upper surface of the third insulating layer 187 to the upper surface of the organic layer 130 may be substantially equal to the distance from the upper surface of the third insulating layer 187 to the upper surface of the color filter layer 160. The distance from the upper surface of the first substrate 110 to the upper surface of the organic layer 130 may be substantially equal to the distance from the upper surface of the first substrate 110 to the upper surface of the color filter layer 160.

[0091] In some embodiments, the organic layer 130 may be a planarization layer. The organic layer 130 may include an organic material, and in some embodiments, the organic material may be a photosensitive organic material. For example, the organic layer 130 may include a negative photosensitive organic material or a positive photosensitive organic material. The organic layer 130 will be described in more detail below.

[0092] As described above, the color filter layer 160 may have a thickness of a predetermined level or more, and as an example, there may be a level difference between the upper surface of the third insulating layer 187 and the upper surface of the color filter layer 160. Due to the level difference occurring through the color filter layer 160, the liquid crystal layer 300 may be transferred along the side slope of the color filter layer 160. When this occurs, light may leak at the side slope portion of the color filter layer 160, and thus the image quality of the display device 1 may be deteriorated.

[0093] In contrast, by arranging the organic layer 130, a flat surface can be provided above the level difference occurring by the color filter layer 160, and thus the liquid crystal layer 300 may not be arranged along the side slope of the color filter layer 160. By doing so, the liquid crystal layer 300 can be uniformly arranged and aligned in the entire area of ​​the display device 1, and thus, light leakage that otherwise occurs at the side slope portion of the color filter layer 160 can be prevented.

[0094] Hereinafter, the second display substrate 200 will be described.

[0095] The second display substrate 200 may include a second base 210 and a common electrode 270 .

[0096] The second substrate 210 may be a transparent insulating substrate similar to the first substrate 110. The second substrate 210 may include a highly heat-resistant polymer or plastic. In some embodiments, the second substrate 210 may have flexibility.

[0097] The common electrode 270 may be disposed on a surface of the second substrate 210 facing the first display substrate 100. The common electrode 270 may be made of a transparent conductive material such as ITO and IZO. In some embodiments, the common electrode 270 may be formed over the entire surface of the second substrate 210. A common voltage may be applied to the common electrode 270 to form an electric field together with the pixel electrode 190.

[0098] The liquid crystal layer 300 may be disposed between the first display substrate 100 and the second display substrate 200. The liquid crystal layer 300 may include liquid crystal molecules having dielectric anisotropy. When an electric field is applied between the first display substrate 100 and the second display substrate 200, the liquid crystal molecules rotate along the direction between the first display substrate 100 and the second display substrate 200 to transmit or block light. Here, the term rotation may refer not only to the actual rotation of the liquid crystal molecules, but also to the change in the orientation of the liquid crystal molecules by the electric field.

[0099] Figure 4B is based on Figure 2 0 is a schematic cross-sectional view of a display device of the embodiment shown in , taken along line III-III′.

[0100] Figure 4B The embodiments shown in Figures 2 to 4A The embodiment shown in FIG. 1 is different in that the color filter layer 160 is removed, and the pixel defining layer PDL, the organic emission layer EL, the common electrode CAT, and the thin film encapsulation layer TFE are included.

[0101] For example, the fourth insulating layer 189 may be disposed on the first protective electrode 166. The first protective electrode 166 may be exposed via a third contact hole CH3 formed in the fourth insulating layer 189 to be electrically connected to the pixel electrode 190. The pixel electrode 190 may be physically / electrically connected to the first protective electrode 166, and may be electrically connected to the drain electrode 165. According to an embodiment of the present disclosure, the pixel electrode 190 may be an anode electrode.

[0102] Since the first protection electrode 166 is disposed on the drain electrode 165 , damage to the drain electrode 165 during a process of forming the third contact hole CH3 in the fourth insulating layer 189 may be prevented.

[0103] The organic layer 130 may be disposed on the fourth insulating layer 189. The organic layer 130 may be disposed in the emission region PXA and the non-emission region NPXA to be described below. In some embodiments, the organic layer 130 may be used as a planarization layer. The organic layer 130 may include an organic material, and in some embodiments, the organic material may be a photosensitive organic material.

[0104] The pixel defining layer PDL may be formed on edges of the organic layer 130 and the pixel electrode 190. The pixel defining layer PDL may include an opening OP for exposing the pixel electrode 190. The pixel defining layer PDL may define each of the pixel regions.

[0105] The pixel definition layer PDL may be an organic insulating layer made of an organic material. As the organic material, polyacrylic acid compounds, polyimide compounds, fluorine-based carbon compounds (such as Teflon TM ) and benzocyclobutene compounds.

[0106] The organic emission layer EL may be disposed in the opening of the pixel defining layer PDL.

[0107] The organic emission layer EL may include a low molecular weight material or a polymer material. The low molecular weight material may include copper phthalocyanine (CuPc), N, N'-di (naphthalene-1-yl) -N, N'-diphenyl-benzidine (NPB), tri-8-hydroxyquinoline aluminum (Alq3), etc., or other suitable materials known and appreciated by those of ordinary skill in the art. Such materials may be formed by vacuum deposition. The polymer material may include PEDOT, polyphenylene vinylene (PPV), polyfluorene, etc., or other suitable materials known and appreciated by those of ordinary skill in the art.

[0108] The organic emission layer EL may be implemented as a single layer, but may be implemented as a multilayer including various functional layers. When implemented as a multilayer, the organic emission layer EL may have a structure in which a hole injection layer, a hole transport layer, an emission layer, an electron transport layer, and an electron injection layer, etc. are stacked one on top of another as a single or complex structure.

[0109] The pixels may be arranged in the display area. The display area may include an emission area PXA and a non-emission area NPXA adjacent to the emission area PXA. The non-emission area NPXA may surround the emission area PXA. Figure 4B The emission region PXA may be defined in correspondence with a portion of the pixel electrode 190 exposed through the opening OP.

[0110] When the organic emission layer EL includes all the above-listed elements, a hole injection layer may be disposed on the pixel electrode 190 which may be an anode electrode, and a hole transport layer, an emission layer, an electron transport layer, and an electron injection layer may be sequentially stacked on one another.

[0111] The organic emission layer EL may include a red organic emission layer emitting red light, a green organic emission layer emitting green light, and a blue organic emission layer emitting blue light. The red organic emission layer, the green organic emission layer, and the blue organic emission layer may be formed in red pixels, green pixels, and blue pixels, respectively, to display a color image.

[0112] The organic emission layer EL can be stacked as a red organic emission layer, a green organic emission layer, and a blue organic emission layer in red pixels, green pixels, and blue pixels, respectively, and red, green, and blue color filters can be formed in each pixel to represent a color image.

[0113] As another example, a white organic emission layer emitting white light may be formed in all red, green, and blue pixels, and red, green, and blue color filters may be formed in the pixels, respectively, to display a color image.

[0114] It should be understood that the white organic emission layer described above may be formed not only as a single organic emission layer but also as a stack of organic emission layers to emit white light.

[0115] For example, white light can be emitted by combining at least one yellow organic emission layer and at least one blue organic emission layer, white light can be emitted by combining at least one cyan organic emission layer and at least one red organic emission layer, white light can be emitted by combining at least one magenta organic emission layer and at least one green organic emission layer, and so on.

[0116] The common electrode CAT may be disposed on the pixel defining layer PDL and the organic emission layer EL.

[0117] The common electrode CAT may be implemented as a metal layer such as silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir) and chromium (Cr) and / or a transparent conductive layer such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO) and indium tin zinc oxide (ITZO). According to an embodiment of the present disclosure, the common electrode CAT may be made of two or more layers including a metal thin film, for example, a three-layer of ITO / Ag / ITO.

[0118] As described above, since the pixel electrode 190 serves as the anode electrode of the organic light emitting diode, the common electrode CAT may serve as the cathode electrode of the organic light emitting diode.

[0119] However, it should be noted that in some embodiments, the pixel electrode 190 may be used as a cathode electrode, and the common electrode CAT may be used as an anode electrode. The pixel electrode 190, the organic emission layer EL, and the common electrode CAT form an organic light emitting diode.

[0120] The thin film encapsulation layer TFE may be disposed on the common electrode CAT to protect the organic light emitting diode. The thin film encapsulation layer TFE may be made of a single layer including one of a first inorganic layer, an organic layer, and a second inorganic layer, but may be made of a multilayer formed by stacking two or more layers.

[0121] In the following, the manufacturing process will be described. Figures 1 to 4A The method of the display device 1 shown in .

[0122] Figures 5 to 15 It is a graphic manufacturing Figures 1 to 4A A schematic cross-sectional view of a method of displaying a device as shown in FIG. 1 and illustrating, by way of example, the process steps along the Figure 2 A schematic cross-sectional view taken along line IV-IV.

[0123] First reference Figure 5 , a light shielding layer 220 may be formed on the first substrate 110 , and a buffer layer 181 may be formed on the light shielding layer 220 .

[0124] like Figure 3 and Figure 6 As shown in , a semiconductor layer 154 overlapping the light shielding layer 220 may be formed on the buffer layer 181. The semiconductor layer 154 may include a source region 154S, a drain region 154D, and a channel region 154A. The source region 154S and the drain region 154D may be formed by doping impurity ions. In the following description, for ease of illustration, the semiconductor layer 154 is referred to as the drain region 154D.

[0125] like Figure 7 As shown in FIG. 1 , a first insulating layer 183 may be formed on the drain region 154D and the buffer layer 181. The first insulating layer 183 may be made of, for example, silicon nitride (SiN x ), silicon oxide (SiO 2 ) and silicon oxynitride (SiO x N y ) and, in some embodiments, can be formed by high density plasma (HDP) deposition.

[0126] The gate line 121 may be formed on the first insulating layer 183. The gate line 121 may extend substantially along the first direction D1 and may be bent in at least one direction on a plane. For example, the first portion 121a of the gate line 121 may extend in the first direction D1, the third portion 121c may be bent from the first portion 121a or the second portion 121b to extend in the second direction D2, and the second portion 121b may be bent from the third portion 121c to extend in the first direction D1. Therefore, the gate line 121 may extend in the first direction D1 and may bypass the first protective electrode 166, the drain electrode 165, or the second contact hole CH2 on a plane. The gate line 121 may be formed so that the gate line 121 does not overlap with the drain region 154D of the semiconductor layer 154.

[0127] like Figure 8 As shown in FIG. 1 , a second insulating layer 185 covering a portion of the gate line 121 c may be formed on the first insulating layer 183. The second insulating layer 185 may be made of, for example, silicon nitride (SiN x ), silicon oxide (SiO 2 ) and silicon oxynitride (SiO x N y ) and, in some embodiments, can be formed by plasma CVD technology.

[0128] like Figure 3 As shown in FIG. 1 , a first contact hole CH1 exposing the source region 154S may be formed in the first insulating layer 183 and the second insulating layer 185 . Figure 2 As shown in , data lines extending along the second direction D2 and crossing the gate line 121, namely, the first data line 171a and the second data line 171b are formed. At least a portion of the first data line 171a may be arranged inside the first contact hole CH1, and may be physically / electrically connected to the source region 154S of the semiconductor layer 154 exposed through the first contact hole CH1. Therefore, a portion of the first data line 171a may be used as a source electrode of the thin film transistor. Fig. 9As shown in FIG. 1 , a third insulating layer 187 may be formed on the second insulating layer 185 and the data lines 171a and 171b. The third insulating layer 187 may be made of an insulating material. For example, the insulating material may be silicon nitride (SiN x ), silicon oxide (SiO 2 ) and silicon oxynitride (SiO x N y ) of inorganic materials.

[0129] like Fig.10 As shown in, a second contact hole CH2 exposing the drain region 154D of the semiconductor layer 154 may be formed in the first insulating layer 183, the second insulating layer 185, and the third insulating layer 187. A drain electrode layer 165' may be formed on the first insulating layer 183, the second insulating layer 185, the third insulating layer 187, and the second contact hole CH2. The drain electrode layer 165' may be physically / electrically connected to the drain region 154D of the semiconductor layer 154 exposed via the second contact hole CH2. The drain electrode layer 165' may be formed by stacking two or more different types of metal layers having different electron mobilities. For example, the drain electrode layer 165' may be formed by stacking two or more metal layers selected from the group consisting of aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), copper (Cu), and alloys thereof. According to an embodiment of the present disclosure, the drain electrode layer 165 ′ may be implemented as a triple layer of Ti / Al / Ti in which titanium is stacked on and under aluminum.

[0130] The first protective electrode layer 166' may be formed on the drain electrode layer 165'. The first protective electrode layer 166' may be made of a material selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium zinc tin oxide (IZTO), indium oxide (In 2 O 3 ), indium gallium oxide (IGO) and aluminum zinc oxide (AZO). According to an embodiment of the present disclosure, the first protective electrode layer 166 ′ may be indium tin oxide (ITO).

[0131] like Fig.11 As shown in , a photoresist pattern PR may be formed on the drain electrode layer 165' and the first protective electrode layer 166' by a photolithography process using a mask. The photoresist pattern PR may be arranged to overlap with the second contact hole CH2 to form the drain electrode 165 and the first protective electrode 166. Fig.11As shown in , the photoresist pattern PR may be formed to the peripheral area of ​​the second contact hole CH2, but the present disclosure is not limited thereto. The photoresist pattern PR may be formed inside the second contact hole CH2 or only inside the second contact hole CH2.

[0132] The first protective electrode layer 166' may be patterned by a wet etching process using the photoresist pattern PR, thereby forming the first protective electrode 166. The drain electrode layer 165' may be patterned by a dry etching process using the same photoresist pattern PR, thereby forming the drain electrode 165. The photoresist pattern PR remaining on the drain electrode 165 and the first protective electrode 166 may be removed by a stripping process.

[0133] Therefore, if Fig.12 As shown in , the drain electrode 165 and the first protection electrode 166 may be formed in the second contact hole CH2 and on the peripheral area.

[0134] like Figure 3 As shown in , the color filter layer 160 may be formed on the third insulating layer 187 in which the second contact hole CH2, the drain electrode 165, and the first protective electrode 166 may be formed. As described above, the color filter layer 160 overlaps a portion of the light shielding layer 220, but does not overlap the second contact hole CH2. The color filter layer 160 may include an organic material and may include a colorant having a color.

[0135] like Figure 3 and 13 As shown, a fourth insulating layer 189 may be formed on the color filter layer 160 and on a portion of the third insulating layer 187 where the color filter layer 160 is not formed. The fourth insulating layer 189 may be made of a material such as silicon nitride (SiN x ), silicon oxide (SiO 2 ) and silicon oxynitride (SiO x N y ) insulating material. However, it should be understood that the present disclosure is not limited thereto. The fourth insulating layer 189 may be implemented as an organic insulating layer. For example, the fourth insulating layer 189 may include a general polymer such as polymethyl methacrylate (PMMA) and polystyrene (PS), a polymer derivative having a phenol group, an acrylic polymer, an imide polymer, an aryl ether polymer, an amide polymer, a fluorinated polymer, a p-xylene polymer, a vinyl alcohol polymer, and a blend thereof.

[0136] A photoresist pattern PR may be formed on the fourth insulating layer 189 by a photolithography process using a mask. The photoresist pattern PR may be arranged on the fourth insulating layer 189 so that the photoresist pattern PR overlaps the second contact hole CH2 to form a third contact hole CH3. The third contact hole CH3 formed in the fourth insulating layer 189 may be smaller than the second contact hole CH2 formed in the first insulating layer 183, the second insulating layer 185, and the third insulating layer 187.

[0137] The fourth insulating layer 189 may be patterned through a dry etching process using the photoresist pattern PR to form a third contact hole CH3.

[0138] If the first protection electrode 166 is not arranged on the drain electrode 165, the drain electrode 165 may be damaged during the process of forming the third contact hole CH3 in the fourth insulating layer 189. According to an embodiment of the present disclosure, the drain electrode 165 may be implemented as a three-layer Ti / Al / Ti in which titanium is stacked on and under aluminum. In order to form the third contact hole CH3, the etching thickness may be greater than the thickness of the fourth insulating layer 189 to ensure that the drain electrode 165 covered by the fourth insulating layer 189 is exposed. In doing so, the aluminum (Al) layer and a portion of the upper titanium (Ti) layer of the drain electrode 165 may be etched. As appreciated and understood by those of ordinary skill in the art, if the photoresist pattern PR is patterned to be smaller than the width of the third contact hole CH3, or if the thickness of the fourth insulating layer 189 is relatively thick, a portion of the etched aluminum (Al) layer and the etched upper titanium (Ti) layer may not be removed, so that a fence-shaped protrusion may be formed on the aluminum (AL) layer. As a result, there may be a fault in the connection between the pixel electrode 190 and the drain electrode 165.

[0139] On the contrary, according to an embodiment of the present disclosure, the first protective electrode 166 is arranged on the drain electrode 165, and thus damage to the drain electrode 165 during the process of forming the third contact hole CH3 in the fourth insulating layer 189 can be prevented. Since the first protective electrode 166 formed of a transparent conductive oxide can have strong durability against dry etching, the first protective electrode 166 is rarely etched. Therefore, the drain electrode 165 arranged under the first protective electrode 166 can be prevented from being etched. Therefore, the contact between the drain electrode 165 and the pixel electrode 190 can be ensured, thereby improving the reliability of the display device 1.

[0140] The photoresist pattern PR remaining on the fourth insulating layer 189 may be removed through a stripping process.

[0141] As a result, Fig.14 As shown in FIG. 1 , a third contact hole CH3 may be formed in the fourth insulating layer 189 so that the first protection electrode 166 formed to overlap with the second contact hole CH2 may be exposed. Fig.15 and Fig.16 , a transparent conductive material may be deposited on the fourth insulating layer 189. The transparent conductive material may be patterned by a photolithography process using a mask to form a pixel electrode 190. The pixel electrode 190 ( Fig.16 190_1) can be through the third contact hole CH3 ( Fig.16 CH3_1) is physically / electrically connected to the first protection electrode 166.

[0142] The pixel electrode 190 may be formed of the same or similar material as the first protective electrode 166. For example, the pixel electrode 190 may include a material selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium zinc tin oxide (IZTO), indium oxide (In 2 O 3 ), indium gallium oxide (IGO) and aluminum zinc oxide (AZO). Therefore, the pixel electrode 190 ( Fig.16 190_1) can be electrically connected to the drain electrode 165. Therefore, it can be ensured that the drain electrode 165 and the pixel electrode 190 ( Fig.16 190_1) between them, thereby improving the reliability of the display device 1.

[0143] like Fig.15 As shown in FIG. 1 , an organic material may be applied over the surface of the first substrate 110 to form an organic material layer 130 ′. As described above, the organic material layer 130 ′ may include a photosensitive organic material. The photosensitive organic material may be a negative photosensitive organic material or a positive photosensitive organic material.

[0144] The organic material layer 130' may be formed to cover the entirety of the fourth insulating layer 189, the pixel electrode 190, and the third contact hole CH3. As an example, when viewed from the top, the organic material layer 130' may overlap the entire color filter layer 160. The distance from the upper surface of the third insulating layer 187 to the upper surface of the organic material layer 130' may be greater than the distance from the upper surface of the third insulating layer 187 to the upper surface of the color filter layer 160. In other words, the thickness of the organic material layer 130' in which the color filter layer 160 is not disposed may be greater than the thickness of the color filter layer 160.

[0145] The organic material layer 130' is exposed to light, and unnecessary portions are removed to form a Figure 3. For example, when the organic material layer 130' includes a negative photosensitive organic material, insufficient exposure is performed at a position where the organic layer 130 is to be formed to cure the organic material, and the unexposed organic material layer 130' is removed to form the organic layer 130. For example, when the organic material layer 130' includes a positive photosensitive organic material, the organic material layer 130' is exposed to light except for a portion where the organic layer 130 is to be formed, and the exposed portion of the organic material layer 130' is removed to form the organic layer 130.

[0146] In this way, Figures 1 to 4A The first display substrate 100 shown in FIG. Figure 1 and Figure 3 ) is formed, so that the display device 1 according to an embodiment of the present disclosure can be manufactured.

[0147] Hereinafter, embodiments of the present disclosure will be described. In the following description, the same or similar elements will be referred to by the same or similar reference numerals, and redundant descriptions will be omitted or briefly described. The description will focus on the differences from the above embodiments.

[0148] Fig.16 is based on Figure 2 0 is a schematic cross-sectional view of a display device of an exemplary embodiment shown in , taken along line III-III′.

[0149] Fig.16 The embodiments shown in Figure 3 The embodiment shown in FIG. 1 is different in that the second protective electrode 167 may be disposed on a portion of the fourth insulating layer 189 between one end portion of the color filter layer 160 and one end portion of the third contact hole CH3_1 .

[0150] The fourth insulating layer 189 may be disposed on the third insulating layer 187, the first protective electrode 166, and the color filter layer 160. The fourth insulating layer 189 may include an inorganic material. For example, the fourth insulating layer 189 may include silicon nitride (SiN x ), silicon oxide (SiO x ), aluminum oxide (AlO x ), titanium oxide (TiO x ) and the like. However, it should be understood that the present disclosure is not limited thereto. The fourth insulating layer 189 may be implemented as an organic insulating layer. For example, the fourth insulating layer 189 may include general polymers such as polymethyl methacrylate (PMMA) and polystyrene (PS), polymer derivatives having phenol groups, acrylic polymers, imide polymers, aryl ether polymers, amide polymers, fluorinated polymers, p-xylene polymers, vinyl alcohol polymers, and blends thereof. The fourth insulating layer 189 may prevent the penetration of moisture and / or oxygen.

[0151] The second protective electrode 167 may be disposed on the fourth insulating layer 189. The second protective electrode 167 may be disposed between an end portion of the color filter layer 160 positioned at a boundary between the light-transmitting area TA and the light-blocking area BA and an end portion of the third contact hole CH3_1.

[0152] The second protection electrode 167 may be made of a material selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium zinc tin oxide (IZTO), indium oxide (In 2 O 3 The second protection electrode 167 may be made of at least one of the transparent conductive oxides selected from the group consisting of indium gallium oxide (IGO) and aluminum zinc oxide (AZO). According to an embodiment of the present disclosure, the second protection electrode 167 may be indium tin oxide (ITO).

[0153] The pixel electrode 190_1 may be disposed on the second protection electrode 167 and the fourth insulating layer 189. The pixel electrode 190_1 may be disposed to overlap the light-transmitting area TA and the light-blocking area BA, and may be physically / electrically connected to the first protection electrode 166 and may be electrically connected to the drain electrode 165 through the third contact hole CH3_1.

[0154] The pixel electrode 190_1 may be formed of a material that is the same as or similar to the first protective electrode 166 and the second protective electrode 167. For example, the pixel electrode 190_1 may be formed of a material selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium zinc tin oxide (IZTO), indium oxide (In 2 O 3 ), indium gallium oxide (IGO), and aluminum zinc oxide (AZO). Therefore, the contact between the drain electrode 165 and the pixel electrode 190 can be ensured, thereby improving the reliability of the display device 1.

[0155] In a photolithography process for forming the third contact hole CH3_1 described later, the second protection electrode 167 may function as a protection layer to prevent damage to the color filter layer 160 even when the photoresist pattern PR may not be aligned with a position where the third contact hole CH3_1 is to be formed.

[0156] Figures 17 to 19 It is a graphic manufacturing Fig.16 A schematic cross-sectional view of a method of displaying a device as shown in FIG. 1 and illustrating, by way of example, the process steps along the Figure 2 A schematic cross-sectional view taken along line III-III'.

[0157] like Fig.17As shown in FIG. , the first protection electrode 166 may be formed in the second contact hole CH2 and on the peripheral area by a photolithography process.

[0158] The color filter layer 160 may be formed on the third insulating layer 187 in which the second contact hole CH2, the drain electrode 165, and the first protective electrode 166 may be formed. As described above, the color filter layer 160 overlaps a portion of the light shielding layer 220, but does not overlap the second contact hole CH2. The color filter layer 160 may include an organic material and may include a colorant having a color.

[0159] A fourth insulating layer 189 may be formed on the color filter layer 160 and on a portion of the third insulating layer 187 where the color filter layer 160 is not formed. The fourth insulating layer 189 may be made of a material such as silicon nitride (SiN x ), silicon oxide (SiO 2 ) and silicon oxynitride (SiO x N y ) insulating material. However, it should be understood that the present disclosure is not limited thereto. The fourth insulating layer 189 may be implemented as an organic insulating layer. For example, the fourth insulating layer 189 may include a general polymer such as polymethyl methacrylate (PMMA) and polystyrene (PS), a polymer derivative having a phenol group, an acrylic polymer, an imide polymer, an aryl ether polymer, an amide polymer, a fluorinated polymer, a p-xylene polymer, a vinyl alcohol polymer, and a blend thereof.

[0160] The second protective electrode layer 167' may be formed on the fourth insulating layer 189. The second protective electrode layer 167' may be made of a material selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium zinc tin oxide (IZTO), indium oxide (In 2 O 3 ), indium gallium oxide (IGO) and aluminum zinc oxide (AZO). According to an embodiment of the present disclosure, the second protective electrode layer 167 ′ may be indium tin oxide (ITO).

[0161] like Fig.18 As shown in FIG. 1 , a photoresist pattern PR may be formed on the second protective electrode layer 167 ′ by a photolithography process using a mask. The photoresist pattern PR may be disposed between one end of the color filter layer 160 and one end of the second contact hole CH2 to form the second protective electrode 167 .

[0162] like Fig.18 As shown in , the photoresist pattern PR may extend to the inside of the second contact hole CH2. However, it should be understood that the present disclosure is not limited thereto. The photoresist pattern PR may not overlap with the second contact hole CH2.

[0163] The second protective electrode layer 167' may be patterned through a wet etching process using the photoresist pattern PR, thereby forming the second protective electrode 167. The photoresist pattern PR remaining on the second protective electrode 167 may be removed through a stripping process.

[0164] refer to Fig.19 , a photoresist pattern PR may be formed on the fourth insulating layer 189 in which the second protection electrode 167 may be formed by a photolithography process using a mask. According to an embodiment of the present disclosure, a photoresist pattern PR may be arranged on the fourth insulating layer 189 so that the photoresist pattern PR may overlap with the second contact hole CH2, thereby forming a third contact hole CH3_1. The fourth insulating layer 189 may be patterned by a dry etching process using the photoresist pattern PR to form the third contact hole CH3_1. The photoresist pattern PR remaining on the fourth insulating layer 189 may be removed by a stripping process.

[0165] like Fig.19 As shown in , during the photolithography process, the photoresist pattern PR may not be aligned with the location where the third contact hole CH3_1 is to be formed (ie, the second contact hole CH2 ).

[0166] If the second protection electrode 167 is not disposed on the end of the color filter layer 160, there may be damage to the color filter layer 160 during the process of forming the third contact hole CH3_1 in the fourth insulating layer 189. Even a portion of the color filter layer 160 overlapping with the region where the photolithography pattern PR is not formed may be etched, so that an inverted cone may be formed at the region. As a result, the pixel electrode 190 may be disconnected.

[0167] In contrast, according to an embodiment of the present disclosure, the second protective electrode 167 is disposed on the color filter layer 160, and thus damage to the color filter layer 160 during the process of forming the third contact hole CH3_1 in the fourth insulating layer 189 can be prevented. Since the second protective electrode 167 formed of a transparent conductive oxide can have strong durability against dry etching, the second protective electrode 167 is rarely etched by dry etching. Therefore, the color filter layer 160 disposed under the second protective electrode 166 can be prevented from being etched. Therefore, the pixel electrode 190_1 can be prevented from being disconnected, thereby improving the reliability of the display device 1.

[0168] While the invention has been shown and described with reference to embodiments thereof, it will be apparent to those skilled in the art that various changes in form and details may be made without departing from the spirit and scope of the invention.

Claims

1. A display device, comprising: substrate; A semiconductor layer, arranged on the substrate and comprising a source region, a drain region and a channel region; A first insulating layer, arranged on the semiconductor layer; a gate line, arranged on the first insulating layer in a first direction and overlapping the channel region; A second insulating layer is arranged on the gate line; a data line arranged on the second insulating layer in a second direction crossing the first direction and contacting a portion of the source region; A third insulating layer is arranged on the data line; a drain electrode disposed on the third insulating layer and contacting the drain region through a contact hole formed in the first insulating layer, the second insulating layer and the third insulating layer; a first protection electrode disposed on the drain electrode to overlap with the drain electrode, the first protection electrode and the drain electrode having the same shape in a plan view; a fourth insulating layer, arranged on the third insulating layer on which the first protection electrode is formed; a pixel electrode disposed on the fourth insulating layer and contacting the first protective electrode through a contact hole formed in the fourth insulating layer; a color filter layer disposed on the third insulating layer on which the drain electrode and the first protective electrode are formed, and not overlapping with the contact holes formed in the first insulating layer, the second insulating layer, and the third insulating layer, wherein the pixel electrode is disposed on the color filter layer; as well as a second protection electrode, arranged between the fourth insulating layer and the pixel electrode, The second protection electrode extends from an end portion of the color filter layer to a portion of the contact hole formed in the fourth insulating layer adjacent to the end portion of the color filter layer. 2 . The display device according to claim 1 , wherein the first protective electrode is made of the same material as the pixel electrode. 3 . The display device according to claim 2 , wherein the first protective electrode is made of a transparent conductive material, the transparent conductive material comprising at least one of indium tin oxide, indium zinc oxide, indium zinc tin oxide, and aluminum zinc oxide. 4 . The display device according to claim 3 , wherein the first protection electrode is in physical contact with the pixel electrode, and wherein the drain electrode is in electrical contact with the pixel electrode. 5 . The display device according to claim 3 , wherein the first protection electrode is in electrical contact with the pixel electrode, and wherein the drain electrode is in electrical contact with the pixel electrode. 6 . The display device of claim 4 , wherein the drain electrode comprises a triple layer of titanium / aluminum / titanium, wherein titanium is stacked on and under aluminum. 7 . The display device of claim 6 , wherein the drain electrode and the first protection electrode do not overlap the data line in a third direction crossing the first direction and the second direction. 8 . The display device of claim 7 , wherein the data line contacts the source region through another contact hole formed in the first insulating layer and the second insulating layer. 9 . The display device according to claim 8 , wherein the second protective electrode is made of the same material as that of the first protective electrode.

10. The display device according to claim 9, further comprising: An organic layer is arranged on the fourth insulating layer and the pixel electrode. 11 . The display device of claim 10 , wherein an upper surface of the organic layer is coplanar with an upper surface of the color filter layer. 12 . The display device according to claim 11 , wherein the gate line extends in the first direction and is bent in at least one direction to bypass the first protection electrode on a plane. 13 . The display device of claim 12 , wherein the gate line includes a first portion parallel to the first direction, a second portion parallel to the first direction and spaced apart from the first portion, and a third portion connecting the first portion and the second portion.

14. The display device according to claim 12, further comprising: a light shielding layer, arranged on the substrate and overlapping the semiconductor layer; as well as A buffer layer is arranged on the light shielding layer, wherein the semiconductor layer is arranged on the buffer layer. 15 . The display device according to claim 14 , wherein the substrate includes a light shielding region in which the light shielding layer is arranged and a light transmitting region in which the light shielding layer is not arranged.

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