Carriers used for post-production line processing

Abstract

A carrier assembly for back-end-of-line (BEOL) processing is provided. A carrier assembly is configured to support a wafer, including during back-end-of-line (BEOL) processing. The carrier assembly includes a dual carrier. A first carrier includes a stepped structure for positioning the wafer. One side of the wafer is bonded to the first carrier without adhesive. The first carrier is positioned on top of a second carrier for mechanical support. Each carrier is fabricated by wet etching laminated glass without mechanical polishing.

Description

[0001] This application claims the benefit of priority under 35 U.S.C. §119 to U.S. Provisional Application Serial No. 62 / 864,139, filed on June 20, 2019, the contents of which are hereby relied upon and incorporated herein by reference in their entirety. Technical Field

[0002] The present invention relates generally to integrated circuit fabrication and more particularly to interconnection of electronic devices. Background Art

[0003] Back-end-of-the-line (BEOL) processing is the second major step in integrated circuit (IC) fabrication, after IC components in the form of individual devices, such as transistors, capacitors, and resistors, have been fabricated. BEOL processing is performed to deposit metal wiring between individual devices, interconnecting the devices through metallization. BEOL includes multiple steps, including separating the wafer from the support structure, a process known as debonding. Summary of the Invention

[0004] The present disclosure relates to techniques for facilitating BEOL processing while protecting wafers from damage. Specifically, as described in greater detail below with reference to the following exemplary, non-limiting embodiments, the present disclosure describes apparatus and methods for facilitating the transfer of wafers to a dicing station to increase wafer yield, i.e., the proportion of wafers that do not need to be discarded due to manufacturing defects.

[0005] At least one embodiment of the present disclosure relates to a carrier assembly for supporting wafers, including during back-end-of-line (BEOL) processing. The carrier assembly includes a dual carrier. A first carrier includes a stepped structure for positioning the wafer. One side of the wafer is bonded to the first carrier without adhesive. The first carrier is positioned on top of a second carrier for mechanical support. Each carrier is fabricated by wet etching laminated glass rather than mechanical polishing.

[0006] At least one embodiment of the present disclosure is directed to a method for supporting a wafer during processing. The method includes positioning a wafer in a first carrier, and supporting the first carrier by a second carrier disposed at least partially below the first carrier. The first carrier and the second carrier provide a dual carrier in which the wafer is positioned. The method also includes transferring the wafer in situ to a cutting station while the wafer is in the dual carrier to cut the wafer.

[0007] Additionally, at least one embodiment of the present disclosure relates to a method for manufacturing a carrier assembly. The method includes constructing a first carrier of the carrier assembly by attaching a first cladding layer of the first carrier to a first core layer; and attaching a second cladding layer of the first carrier to the first core layer such that the first core layer is sandwiched between the first cladding layer and the second cladding layer of the first carrier. The method also includes performing a first etching process on the first carrier to expose a portion of the first core layer, and performing a second etching process on the first carrier to form a perforation. The formation of the perforation divides the first carrier into a first segment and a second segment.

[0008] These and other features, together with their organization and manner of operation, will become apparent from the following detailed description when taken in conjunction with the accompanying drawings, wherein like elements have like reference numerals throughout the several drawings described below. It should be understood that the combination of the foregoing concepts and additional concepts discussed in more detail below (provided such concepts are not mutually inconsistent) are considered part of the subject matter disclosed herein. In particular, all combinations of claimed subject matter appearing at the end of this disclosure are considered part of the subject matter disclosed herein. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] The foregoing features and other features of the present disclosure will become more fully apparent from the following description and appended claims, taken in conjunction with the accompanying drawings. It should be understood that these drawings depict only several embodiments of the present disclosure and are not, therefore, to be considered limiting of its scope, which will be described with additional particularity and detail through the use of the accompanying drawings.

[0010] According to at least one embodiment, Figure 1 is a cross-sectional view of a dual carrier with wafers positioned therein.

[0011] According to at least one embodiment, Figure 2A 2 is a cross-sectional view of the first carrier in the dual carrier before patterning.

[0012] According to at least one embodiment, Figure 2B 2 is a cross-sectional view of the first carrier in the dual carrier after patterning.

[0013] According to at least one embodiment, Figure 2C 2 is a cross-sectional view of the first carrier in the dual carrier after etching.

[0014] According to at least one embodiment, Figure 2D for Figure 2B A top view of the first carrier is shown.

[0015] According to at least one embodiment, Figure 2E for Figure 2C A top view of the first carrier is shown.

[0016] According to at least one embodiment, Figure 3A is a cross-sectional view illustrating a first carrier after patterning for forming through-holes.

[0017] According to at least one embodiment, Figure 3B A cross-sectional view of the first carrier is depicted after etching and perforation formation.

[0018] According to at least one embodiment, Figure 3C for Figure 3A A top view of the first carrier is shown.

[0019] According to at least one embodiment, Figure 3D for Figure 3B A top view of the first carrier is shown.

[0020] According to at least one embodiment, Figure 4A 2 is a cross-sectional view of the second carrier in the dual carrier after patterning.

[0021] According to at least one embodiment, Figure 4B is a cross-sectional view of the second carrier after etching to form a platform.

[0022] According to at least one embodiment, Figure 4C for Figure 4A A top view of the second carrier is shown.

[0023] According to at least one embodiment, Figure 4D for Figure 4B A top view of the second carrier is shown.

[0024] According to at least one embodiment, Figure 5A A cross-sectional view of a dual carrier with wafers attached.

[0025] According to at least one embodiment, Figure 5B A cross-sectional view of the dual carrier after wafer polishing.

[0026] According to at least one embodiment, Figure 5C FIG. 4 is a cross-sectional view of the dual carrier after the wafer is separated from the second carrier of the dual carrier.

[0027] According to at least one embodiment, Figure 5D A cross-sectional view of a portion of the dual carrier after wafer separation.

[0028] According to at least one embodiment, Figure 6A A cross-sectional view of a portion of a dual carrier positioned on a platform.

[0029] According to at least one embodiment, Figure 6BA cross-sectional view of a portion of a dual carrier positioned on a platform during wafer dicing.

[0030] According to at least one embodiment, Figure 6C is a cross-sectional view of a portion of a dual carrier positioned on a platform with wafers in a diced state.

[0031] According to at least one embodiment, Figure 7 A cross-sectional view of a glass product.

[0032] According to at least one embodiment, Figure 8 is a cross-sectional view of an overflow distributor that can be used to form glass articles.

[0033] According to at least one embodiment, Figure 9 Methods for making dual vectors are described.

[0034] In the following detailed description, reference is made to the accompanying drawings. Unless the context dictates otherwise, in the drawings, like symbols generally represent like parts. The exemplary embodiments described in the detailed description, drawings, and claims are not meant to be limiting. Other embodiments may be employed, and other changes may be made, without departing from the spirit and scope of the subject matter presented herein. It should be readily understood that aspects of the present disclosure, as generally described herein and illustrated in the drawings, may be arranged, substituted, combined, and designed in a variety of different configurations, all of which are contemplated and form part of this disclosure. DETAILED DESCRIPTION

[0035] Various exemplary embodiments provide a dual carrier for supporting wafers, such as silicon (Si) wafers, during back-end (BEOL) processing. More specifically, as described below, the dual carrier is formed from two carrier members, with a first carrier member positioned on top of a second carrier member. At least a portion of the dual carrier member supports the wafer during various stages of BEOL processing. Furthermore, at least a portion of the dual carrier member supports the wafer during dicing and supports individual dies after dicing, thereby eliminating the need for a separate debonding process.

[0036] In at least one embodiment, the dual carrier 100 is a glass article. In at least one embodiment, the glass article can be a glass article as described in U.S. Patent Application Publication No. 2017 / 0174564, published on June 22, 2017, which is a publication of U.S. Serial No. 15 / 129,278, filed on March 25, 2015, the entire contents of which are incorporated herein by reference, including the compositions and methods described therein.

[0037] Figure 7Depicted are glass articles in at least one embodiment. As used herein, the term "average coefficient of thermal expansion" refers to the average coefficient of thermal expansion of a given material or layer between 0° C. and 300° C. As used herein, unless otherwise indicated, the term "coefficient of thermal expansion" refers to the average coefficient of thermal expansion.

[0038] The strength of at least one glass article described herein was determined using ring-on-ring loading according to the test method described in ASTM C1499-08, Standard Test Method for Monotonic Biaxial Flexural Strength of Advanced Ceramics at Ambient Temperature. Generally, the ring-on-ring loading test method is used to determine the biaxial strength of advanced alkali metal materials at ambient temperature using a concentric ring configuration under monotonic biaxial loading and is widely accepted as a method for evaluating the surface strength of glass articles. The ring-on-ring loading results described herein were determined on a 2-inch square glass sheet using a 1-inch diameter support ring and a 0.5-inch diameter load ring. The ring contact radius was 1.6 mm, and the head speed was 1.2 mm / min (millimeters per minute).

[0039] As used herein, the term "residual strength" refers to the strength of a glass article determined after a flaw has been controlled introduced into the outer surface of the glass article. As used herein, the term "Knoop scratch threshold" refers to the load at which transverse cracking is first observed in a glass article in response to scratching the surface of the glass article with a Knoop diamond at increasing loads. The test is conducted at room temperature and 50% relative humidity.

[0040] As used herein, the term "indentation threshold" refers to the load at which cracks are first observed in a glass article in response to indenting the surface of the glass article with a Vickers indenter at increasing loads. Using the Vickers indenter, an indentation load is applied at a rate of 0.2 mm / min and then removed from the surface of the glass article. The maximum indentation load is maintained for 10 seconds. The indentation threshold is determined as the indentation load at which 50% of 10 indentations exhibit any number of radial / intermediate cracks extending from the corners of the indentation mark. The maximum indentation load is increased until the indentation threshold for a given glass article is reached. All indentation measurements are performed at room temperature and 50% relative humidity.

[0041] As used herein, the term "Vickers scratch threshold" refers to the load at which transverse cracking is first observed in a glass article in response to scratching the surface of the glass article with a Vickers indenter at increasing loads. The test procedure is similar to that used to determine the Knoop scratch threshold, but with a Vickers indenter substituted for the Knoop diamond. Transverse cracking is evidenced by a sustained crack in the glass article that is greater than twice the width of the original scratch or groove formed by the Vickers indenter.

[0042] In various embodiments, a glass article includes at least a first layer and a second layer. For example, the first layer comprises a core layer, and the second layer comprises one or more cladding layers adjacent to the core layer. The first layer and / or the second layer are glass layers comprising glass, glass ceramic, or combinations thereof. In some embodiments, the first layer and / or the second layer are transparent glass layers.

[0043] Figure 7 is a cross-sectional view of an exemplary embodiment of a glass article 200. In some embodiments, the glass article 200 comprises a laminate comprising a plurality of glass layers. The laminate may be as follows: Figure 7 The glass article 200 includes a core layer 102 disposed between a first cladding layer 104 and a second cladding layer 106. In some embodiments, the first cladding layer 104 and the second cladding layer 106 are as shown. Figure 7 In other embodiments, the first cladding layer and / or the second cladding layer is an intermediate layer disposed between the core layer and the outer layer.

[0044] Core layer 102 comprises a first major surface and a second major surface opposite the first major surface. In some embodiments, first cladding layer 104 is fused to the first major surface of core layer 102. Additionally or alternatively, second cladding layer 106 is fused to the second major surface of core layer 102. In such embodiments, the interface between first cladding layer 104 and core layer 102 and / or the interface between second cladding layer 106 and core layer 102 is free of any bonding material, such as an adhesive, coating, or any non-glass material added or configured to adhere the cladding layers to the core layer. Thus, first cladding layer 104 and / or second cladding layer 106 are directly fused to or directly adjacent to core layer 102. In some embodiments, the glass article comprises one or more interlayers disposed between the core layer and the first cladding layer and / or between the core layer and the second cladding layer. For example, the interlayer comprises an interlayer of glass and / or a diffusion layer formed at the interface between the core layer and the cladding layers. In some embodiments, the glass article 200 is formed as a glass-glass laminate, wherein the interface between immediately adjacent glass layers is a glass-glass interface.

[0045] In some embodiments, the core layer 102 comprises a first glass composition, and the first cladding layer 104 and / or the second cladding layer 106 comprises a second glass composition that is different from the first glass composition. Figure 7In the embodiment shown, the core layer 102 comprises a first glass composition, and the first cladding layer 104 and the second cladding layer 106 each comprise a second glass composition. In other embodiments, the first cladding layer comprises a second glass composition, and the second cladding layer comprises a third glass composition that is different from the first glass composition and / or the second glass composition.

[0046] The glass article can be formed using a suitable process, such as fusion draw, down draw, slot draw, up draw, or float. In some embodiments, the glass article is formed using a fusion draw process.

[0047] Figure 8 is a cross-sectional view of an exemplary embodiment of an overflow distributor 300 that can be used to form a glass article, such as glass article 200. Overflow distributor 300 can be constructed as described in U.S. Patent No. 4,214,886, which is incorporated herein by reference in its entirety. For example, overflow distributor 300 includes a lower overflow distributor 220 and an upper overflow distributor 240 located above the lower overflow distributor. Lower overflow distributor 220 includes a trough 222. A first glass composition 224 is melted and fed into trough 222 in a viscous state. As further described below, first glass composition 224 forms core layer 102 of glass article 200. Upper overflow distributor 240 includes a trough 242. A second glass composition 244 is melted and fed into trough 242 in a viscous state. As further described below, second glass composition 244 forms first cladding layer 104 and second cladding layer 106 of glass article 100.

[0048] The first glass composition 224 overflows the trough 222 and flows downwardly along opposing outer forming surfaces 226 and 228 of the underflow distributor 220. The outer forming surfaces 226 and 228 converge at a draw line 230. The separate streams of the first glass composition 224 flowing downwardly along the respective outer forming surfaces 226 and 228 of the underflow distributor 220 converge at the draw line 230 where they fuse together to form the core layer 102 of the glass article 100.

[0049] The second glass composition 244 overflows the trough 242 and flows downwardly along the opposing outer forming surfaces 246 and 248 of the upper overflow distributor 240. The second glass composition 244 is deflected outwardly by the upper overflow distributor 240 so that the second glass composition flows around the lower overflow distributor 220 and contacts the first glass composition 224 flowing over the outer forming surfaces 226 and 228 of the lower overflow distributor. The separate streams of the second glass composition 244 merge with the corresponding separate streams of the first glass composition 224 that flow downwardly along the corresponding outer forming surfaces 226 and 228 of the lower overflow distributor 220. Upon converging with the streams of the first glass composition 224 at the draw line 230, the second glass composition 244 forms the first cladding layer 104 and the second cladding layer 106 of the glass article 200.

[0050] In some embodiments, the first glass composition 224 of the core layer 102 in a viscous state is contacted with the second glass composition 244 of the first cladding layer 104 and the second cladding layer 106 in a viscous state to form a laminate. In some such embodiments, the laminate is formed from Figure 8 A portion of the glass ribbon exiting the draw line 230 of the underflow distributor 220 is shown. The glass ribbon can be drawn from the underflow distributor 220 by any suitable means, including, for example, gravity and / or pulling rollers. The glass ribbon cools as it exits the underflow distributor 220. The glass ribbon is cut to separate the laminates therefrom. Thus, the laminates are cut from the glass ribbon. The glass ribbon can be cut using any suitable technique, such as scoring, bending, thermal shock, and / or laser cutting. In some embodiments, the glass article 200 comprises a Figure 7 In other embodiments, the laminate can be further processed (eg, by cutting or molding) to form the glass article 200.

[0051] Although Figure 7 The glass article 200 shown includes three layers, but the present disclosure also includes other embodiments. In other embodiments, the glass article can have a certain number of layers, such as two layers, four layers, or more layers. Glass articles with a certain number of layers can be formed by modifying the overflow distributor accordingly.

[0052] In some embodiments, the glass article 200 comprises a thickness of at least about 0.05 mm, at least about 0.1 mm, at least about 0.2 mm, or at least about 0.3 mm. Additionally or alternatively, the glass article 200 comprises a thickness of up to about 2 mm, up to about 1.5 mm, up to about 1 mm, up to about 0.7 mm, or up to about 0.5 mm. In some embodiments, the ratio of the thickness of the core layer 102 to the thickness of the glass article 200 is at least about 0.8, at least about 0.85, at least about 0.9, or at least about 0.95. In some embodiments, the second layer (e.g., each of the first cladding layer 104 and the second cladding layer 106) has a thickness of about 0.01 mm to about 0.3 mm.

[0053] In some embodiments, the first glass composition and / or the second glass composition comprises a liquidus viscosity suitable for forming the glass article 200 using the fusion draw method described herein. For example, the first glass composition of the first layer (e.g., core layer 102) comprises a liquidus viscosity of at least about 100 kP, at least about 200 kP, or at least about 300 kP. Additionally or alternatively, the first glass composition comprises a liquidus viscosity of up to about 3000 kP, up to about 2500 kP, up to about 1000 kP, or up to about 800 kP. Additionally or alternatively, the second glass composition of the second layer (e.g., first cladding layer 104 and / or second cladding layer 106) comprises a liquidus viscosity of at least about 50 kP, at least about 100 kP, or at least about 200 kP. Additionally or alternatively, the second glass composition comprises a liquidus viscosity of up to about 3000 kP, up to about 2500 kP, up to about 1000 kP, or up to about 800 kP. The first glass composition can assist in loading the second glass composition into the overflow dispenser to form the second layer.Thus, the second glass composition can comprise a lower liquidus viscosity than is generally considered suitable for forming a monolayer using a fusion draw process.

[0054] In some embodiments, the glass article 200 is configured as a strengthened glass article. For example, in some embodiments, the second glass composition of the second layer (e.g., the first cladding layer 104 and / or the second cladding layer 106) comprises an average coefficient of thermal expansion (CTE) that is different from the first glass composition of the first layer (e.g., the core layer 102). For example, the first cladding layer 104 and the second cladding layer 106 are formed from a glass composition having a lower average CTE than the core layer 102. This CTE mismatch (i.e., the difference between the average CTE of the first cladding layer 104 and the second cladding layer 106 and the average CTE of the core layer 102) results in compressive stresses forming in the cladding layers and tensile stresses forming in the core layer after the glass article 200 cools. In various embodiments, the first cladding layer and the second cladding layer can each independently have a higher average CTE, a lower average CTE, or a substantially equal average CTE than the core layer.

[0055] In some embodiments, the average CTE of the first layer (e.g., core layer 102) differs from the average CTE of the second layer (e.g., first cladding layer 104 and / or second cladding layer 106) by at least about 5×10 -7 ℃ -1 , at least about 15×10 -7 ℃ -1 , or at least about 25×10 -7 ℃ -1 Additionally or alternatively, the average CTE of the first layer differs from the average CTE of the second layer by up to about 55×10 -7 ℃ -1 , up to about 50×10 -7 ℃ -1 , up to about 40×10 -7 ℃ -1 、The highest is about 30×10 -7 ℃ -1 , up to about 20×10 -7 ℃ -1 , or up to about 10×10 -7 ℃ -1 For example, in some embodiments, the average CTE of the first layer differs from the average CTE of the second layer by about 5×10 -7 ℃ -1 to about 30×10 -7 ℃ -1 , or about 5×10 -7 ℃ -1 to about 20×10 -7 ℃ -1 In some embodiments, the second glass composition of the second layer comprises up to about 40×10 -7 ℃ -1 , or up to about 35×10-7 ℃ -1 Additionally or alternatively, the second glass composition of the second layer comprises at least about 25×10 -7 ℃ -1 , or at least about 30×10 -7 ℃ -1 Additionally or alternatively, the first glass composition of the first layer comprises at least about 40×10 -7 ℃ -1 , at least about 50×10 -7 ℃ -1 , or at least about 55×10 -7 ℃ -1 Additionally or alternatively, the first glass composition of the first layer comprises a maximum of about 90×10 -7 ℃ -1 , the highest is about 85×10 -7 ℃ -1 , up to about 80×10 -7 ℃ -1 , the highest is about 70×10 -7 ℃ -1 , or up to about 60×10 -7 ℃ -1 The average CTE of

[0056] In various embodiments, the glass composition and relative thicknesses of the various glass layers can be selected to achieve a glass article having desired strength properties. For example, in some embodiments, the first glass composition of the first layer (e.g., core layer 102) and the second glass composition of the second layer (e.g., first cladding layer 104 and / or second cladding layer 106) are selected to achieve a desired CTE mismatch, and the respective thicknesses of the first and second layers are selected in conjunction with the desired CTE mismatch to achieve a desired compressive stress in the second layer, a desired tensile stress in the first layer, a desired residual strength, and / or a desired drop threshold.

[0057] In various embodiments, the glass compositions and relative thicknesses of the glass layers can be selected to achieve a glass article having desired strength properties. For example, in some embodiments, the first glass composition of the first layer (e.g., core layer 102), the second glass composition of the second layer (e.g., first cladding layer 104 and / or second cladding layer 106), and the respective thicknesses of the first and second layers are selected to achieve a glass article having a desired Knoop scratch threshold and / or a desired indentation threshold.

[0058] In some embodiments, the glass article has a Knoop scratch threshold of at least about 5 N, at least about 10 N, or at least about 15 N. Additionally or alternatively, the glass article has an indentation threshold of at least about 20 N, at least about 30 N, or at least about 40 N. Additionally or alternatively, the glass article has a Vickers scratch threshold of at least about 2 N, at least about 3 N, at least about 5 N, or at least about 7 N. Additionally or alternatively, the glass article has a drop threshold of at least about 100 cm, at least about 140 cm, or at least about 160 cm.

[0059] In some embodiments, the compressive stress of the coating is up to about 800 MPa, up to about 500 MPa, up to about 300 MPa, up to about 200 MPa, up to about 150 MPa, up to about 100 MPa, up to about 50 MPa, or up to about 40 MPa. Additionally, or alternatively, the compressive stress of the coating is at least about 10 MPa, at least about 20 MPa, at least about 30 MPa, at least about 50 MPa, or at least about 100 MPa.

[0060] The first glass composition of the first layer (eg, core layer 102) and the second glass composition of the second layer (eg, first cladding layer 104 and / or second cladding layer 106) can comprise suitable glass compositions capable of forming glass articles having the desired properties described herein.

[0061] In some embodiments, the first glass composition comprises a glass network former selected from the group consisting of SiO2, Al2O3, B2O3, and combinations thereof. For example, the first glass composition comprises at least about 50 mol% SiO2, at least about 55 mol% SiO2, at least about 60 mol% SiO2, or at least about 65 mol% SiO2. Additionally or alternatively, the first glass composition comprises up to about 80 mol% SiO2, up to about 70 mol% SiO2, up to about 68 mol% SiO2, or up to about 60 mol% SiO2. Additionally or alternatively, the first glass composition comprises at least about 5 mol% Al2O3, at least about 9 mol% Al2O3, or at least about 12 mol% Al2O3. Additionally or alternatively, the first glass composition comprises up to about 20 mol% Al2O3, up to about 17 mol% Al2O3, or up to about 11 mol% Al2O3. Additionally or alternatively, the first glass composition comprises at least about 3 mol% B2O3, at least about 6 mol% B2O3, or at least about 7 mol% B2O3. Additionally or alternatively, the first glass composition comprises up to about 11 mol% B2O3, up to about 8 mol% B2O3, or up to about 4 mol% B2O3. In some embodiments, the first glass composition is substantially free of B2O3. For example, the first glass composition comprises up to about 0.1 mol% B2O3.

[0062] In some embodiments, the first glass composition comprises an alkali metal oxide selected from the group consisting of Li2O, Na2O, KO, and combinations thereof. For example, the first glass composition comprises at least about 0.05 mol% Na2O, at least about 10 mol% Na2O, or at least about 13 mol% Na2O. Additionally or alternatively, the first glass composition comprises up to about 16 mol% Na2O, up to about 14 mol% Na2O, up to about 2 mol% Na2O, or up to about 0.1 mol% Na2O. Additionally or alternatively, the first glass composition comprises at least about 0.01 mol% KO, at least about 2 mol% KO, or at least about 8 mol% KO. Additionally or alternatively, the first glass composition comprises up to about 15 mol% KO, up to about 9 mol% KO, up to about 6 mol% KO, or up to about 0.1 mol% KO.

[0063] In some embodiments, the first glass composition comprises an alkaline earth metal oxide selected from the group consisting of MgO, CaO, SrO, BaO, and combinations thereof. For example, the first glass composition comprises at least about 1 mol% MgO, at least about 2 mol% MgO, at least about 3 mol% MgO, or at least about 4 mol% MgO. Additionally or alternatively, the first glass composition comprises up to about 8 mol% MgO, up to about 4 mol% MgO, or up to about 3 mol% MgO. Additionally or alternatively, the first glass composition comprises at least about 0.01 mol% CaO, at least about 2 mol% CaO, at least about 4 mol% CaO, at least about 5 mol% CaO, or at least about 6 mol% CaO. Additionally or alternatively, the first glass composition comprises up to about 8 mol% CaO, up to about 7 mol% CaO, up to about 0.1 mol% CaO, or up to about 0.01 mol% CaO. Additionally or alternatively, the first glass composition comprises at least about 3 mol% SrO, at least about 4 mol% SrO, at least about 5 mol% SrO, or at least about 6 mol% SrO. Additionally or alternatively, the first glass composition comprises up to about 7 mol% SrO, up to about 6 mol% SrO, or up to about 5 mol% SrO. Additionally or alternatively, the first glass composition comprises at least about 0.01 mol% BaO, at least about 0.02 mol% BaO, or at least about 0.07 mol% BaO. Additionally or alternatively, the first glass composition comprises up to about 0.1 mol% BaO, up to about 0.09 mol% BaO, up to about 0.05 mol% BaO, or up to about 0.01 mol% BaO. In some embodiments, the first glass composition is substantially free of SrO. For example, the first glass composition comprises up to about 0.1 mol% SrO.

[0064] In some embodiments, the first glass composition includes one or more additional components including, for example, SnO 2 , Sb 2 O 3 , As 2 O 3 , Ce 2 O 3 , Cl (eg, from KCl or NaCl), ZrO 2 , or Fe 2 O 3 .

[0065] In some embodiments, the second glass composition comprises a glass network former selected from the group consisting of SiO2, Al2O3, B2O3, and combinations thereof. For example, the second glass composition comprises at least about 60 mol% SiO2, at least about 62 mol% SiO2, or at least about 67 mol% SiO2. Additionally or alternatively, the second glass composition comprises up to about 70 mol% SiO2, up to about 68 mol% SiO2, up to about 65 mol% SiO2, or up to about 63 mol% SiO2. Additionally or alternatively, the second glass composition comprises at least about 6 mol% Al2O3, at least about 10 mol% Al2O3, or at least about 12 mol% Al2O3. Additionally or alternatively, the second glass composition comprises up to about 18 mol% Al2O3, up to about 13 mol% Al2O3, or up to about 8 mol% Al2O3. Additionally or alternatively, the second glass composition comprises at least about 4 mol% B2O3, at least about 6 mol% B2O3, at least about 9 mol% B2O3, or at least about 16 mol% B2O3. Additionally or alternatively, the second glass composition comprises up to about 21 mol% B2O3, up to about 18 mol% B2O3, or up to about 11 mol% B2O3.

[0066] In some embodiments, the second glass composition comprises an alkali metal oxide selected from the group consisting of Li2O, Na2O, KO, and combinations thereof. For example, the second glass composition comprises from about 0 mol% to about 0.1 mol% Na2O, or from about 0 mol% to about 0.06 mol% Na2O. Additionally or alternatively, the second glass composition comprises from about 0 mol% to about 0.05 mol% KO, or from about 0 mol% to about 0.03 mol% KO. In some embodiments, the second glass composition is substantially free of alkali metals. For example, the second glass composition comprises up to about 0.1 mol% alkali metal oxide. In other embodiments, the second glass composition comprises from about 5 mol% to about 10 mol% alkali metal oxide.

[0067] In some embodiments, the second glass composition comprises an alkaline earth metal oxide selected from the group consisting of MgO, CaO, SrO, BaO, and combinations thereof. For example, the second glass composition comprises at least about 0.2 mol% MgO, at least about 1 mol% MgO, or at least about 3 mol% MgO. Additionally or alternatively, the second glass composition comprises up to about 5 mol% MgO, up to about 4 mol% MgO, up to about 2 mol% MgO, or up to about 0.5 mol% MgO. Additionally or alternatively, the second glass composition comprises at least about 3 mol% CaO, at least about 4 mol% CaO, at least about 5 mol% CaO, or at least about 8 mol% CaO. Additionally or alternatively, the second glass composition comprises up to about 12 mol% CaO, up to about 9 mol% CaO, up to about 8 mol% CaO, or up to about 5 mol% CaO. Additionally or alternatively, the second glass composition comprises at least about 0.2 mol% SrO, at least about 1 mol% SrO, or at least about 2 mol% SrO. Additionally or alternatively, the second glass composition comprises up to about 3 mol% SrO, up to about 2 mol% SrO, or up to about 1 mol% SrO. Additionally or alternatively, the second glass composition comprises at least about 0.01 mol% BaO, at least about 0.02 mol% BaO, or at least about 1 mol% BaO. Additionally or alternatively, the second glass composition comprises up to about 2 mol% BaO, up to about 0.5 mol% BaO, up to about 0.03 mol% BaO, up to about 0.02 mol% BaO, or up to about 0.01 mol% BaO. In some embodiments, the second glass composition comprises from about 3 mol% to about 16 mol% alkaline earth oxide. Furthermore, in some embodiments, the second glass composition comprises one or more additional components, including, for example, SnO 2 , Sb 2 O 3 , As 2 O 3 , Ce 2 O 3 , Cl (eg, derived from KCl or NaCl), ZrO 2 , or Fe 2 O 3 . Figure 1 is a cross-sectional view of a dual carrier in which a wafer is positioned according to at least one embodiment. Figure 1 As shown, a wafer (Si wafer) 101 is located in a dual carrier 100. In at least one embodiment, the dual carrier 100 can be constructed from at least one glass article, such as the glass article 200 described above. In at least one embodiment, the dual carrier 100 is a carrier support structure or carrier assembly, which is formed by a first carrier 10 and a second carrier 20 located below the first carrier 10 to support the first carrier 10. The following describes the manufacture of each of the first carrier 10 and the second carrier 20 according to at least one embodiment.

[0068] Figures 2A-2E The preparation and formation of the first carrier 10 is depicted. Figure 2A is a cross-sectional view of the first carrier 10 of the dual carrier 100 before patterning according to at least one embodiment. Figure 2A As shown, the first carrier 10 includes a layer of core material 14, which is sandwiched between an upper cladding layer 12 and a lower cladding layer 18. In some embodiments, the core material 14 (core layer) can be glass, and the upper (first) cladding layer 12 and the lower (second) cladding layer 18 can be made of a laminate. Therefore, according to at least one embodiment, the first carrier 10 can be constructed in the form of a glass article 200, and the core material 14 is made of the same or similar composition as the core layer 102, the upper layer 12 is made of the same or similar composition as the first cladding layer 104, and the lower layer 18 is made of the same or similar composition as the second cladding layer 106, and the corresponding components are made by the same or similar processes as described above.

[0069] In various embodiments, the core material 14, as well as the upper and lower cladding layers 12 and 18, may be glasses having different compositions and properties. That is, the core material 14 may be different from the upper and lower cladding layers 12 and 18. Furthermore, in some embodiments, the cladding material of the upper layer 12 may be the same as or different from the cladding material of the lower layer 18. More specifically, in some embodiments, one or more of the core material 14, the upper layer 12, or the lower layer 18 may comprise laminated glass. In some embodiments, the ratio of the thickness of the core material 14 to the thickness of the first carrier is at least approximately 0.8, at least approximately 0.85, at least approximately 0.9, or at least approximately 0.95. Figure 2B is a cross-sectional view of a first carrier in a dual carrier after patterning according to at least one embodiment. Figure 2B As shown, an etch-resistant layer 16 is provided on top of the coating upper layer 12. The etch-resistant layer 16 is patterned to prepare the first carrier 10 to form one or more openings (holes) therein. The patterning of the etch-resistant layer 16 creates at least one opening in which the upper layer 12 is not covered, as discussed below. In some embodiments, the etch-resistant layer 16 can be a photoresist or a mask.

[0070] exist Figures 2A-2C In the embodiment, the first carrier 10 is depicted as having one opening in cross section. It should be understood that this is for ease of illustration, and the size and number of openings in the first carrier 10 may vary depending on certain embodiments. For example, Figures 2A-2C The depiction of the first carrier 10 in the figures may depict approximately half of the first carrier 10 (i.e., the portion of the carrier 10 having one opening), and the overall length of the first carrier 10 may be sized to accommodate two openings in the length direction of the carrier 10 and two openings in the width direction.

[0071] In some embodiments, the first carrier 10 can be sized to accommodate 2, 4, 6, 8, 10, or 12 openings, although a different number of openings can be provided in other embodiments. In particular, the number of openings can be varied to take into account the size of the wafer held by the first carrier 10. For example, if a silicon wafer having a diameter of approximately 12 inches (approximately 300 mm) is used, the first carrier 10 can have a size of approximately 800 mm x 800 mm and be provided with four openings. If a silicon wafer having a diameter of approximately 8 inches (approximately 200 mm) is used, the first carrier 10 can have a size of approximately 550 mm x 550 mm and be provided with four openings.

[0072] Figure 2D According to at least one embodiment of the present invention Figure 2B A top view of the first carrier is shown in FIG. Figure 2D As seen in FIG, when patterning is performed to form holes, the etching resist 16 is provided discontinuously on top of the cladding upper layer 12. More specifically, an opening 17 is provided through which the cladding upper layer 12 can be seen when viewed from the top.

[0073] Figure 2C FIG1 is a cross-sectional view of the first carrier of the dual carrier after etching according to at least one embodiment. In at least one embodiment, a first etching process is performed to form a hole in first carrier 10. This etching process removes a portion of the encapsulating upper layer 12, thereby expanding the opening between the sides of adhesive 16. Specifically, by removing the portion of upper layer 12 exposed by patterning, the etching increases the depth of at least opening 17.

[0074] Figure 2E According to at least one embodiment, Figure 2C A top view of the first carrier is shown. Figure 2E As shown, by etching to remove a portion of the cladding upper layer 12 , the core material 14 is directly exposed through the opening 17 and is visible when viewed from the top of the first carrier 10 .

[0075] Figure 3A According to at least one embodiment, a cross-sectional view of a first carrier after patterning to form openings 17 is depicted. Figure 3A As can be seen in FIG, patterning can be performed in a manner such that the etching prevention layer 16 is located not only above the cladding upper layer 12 but also on the sides of the opening 17, specifically, at the peripheral portion of the opening 17 adjacent to the remaining portion of the upper layer 12 and directly above the core material 14 not covered by the cladding upper layer 12. More specifically, the etching prevention layer 16 is configured such that a stepped portion 13 is present to border the opening 17, and the etching prevention layer 16 extends over the stepped portion 13 in the lateral direction (along the direction of the main axis of the first carrier 10).

[0076] Figure 3C According to at least one embodiment, Figure 3A A top view of the first carrier 10 is shown. Figure 3C The top view of the first carrier 10 shown may be similar to Figure 2E The top view of the first carrier 10 is shown, but due to the presence of the anti-etching layer 16 on the sides of the opening 17 , the proportion of the surface area covered by the anti-etching layer 16 is changed.

[0077] Figure 3B According to at least one embodiment, a cross-sectional view of a first carrier after etching and perforation formation is depicted. Figure 3B As shown, the cladding upper layer 12 is removed by the second etching process so that a first length in a lateral direction of the first carrier 10 is shorter than a length of the cladding lower layer 18 below the core material 14. According to some embodiments, the core material 14 and the cladding lower layer 18 may have substantially the same length.

[0078] The configuration of the cladding upper layer 12, which is provided along a shorter extent than the core material 14 and the cladding lower layer 18, is used to form a stepped or staggered opening 17 having an edge or sidewall 15 at the center of the first carrier 10. The stepped opening 17 is produced without mechanical polishing, but is formed by first and second etching processes. In other words, a T-shaped opening is formed, wherein the stem of the T has a first width, the width of the removed portion of the core material 14 and the cladding lower layer 18 being etched away, and the horizontal portion of the T perpendicular to the stem has a second width, the first width being the width of the removed portion of the cladding upper layer 12 being etched away, which exceeds the first width.

[0079] In at least one embodiment, the width of the stepped opening between the sidewall 15 and the edge of the core material 14 can be in the range of about 2 mm to about 5 mm. That is, the distance between the upper cladding layer 12 of the first section A of the first carrier 10 and the upper layer of the second section B exceeds the distance between the lower cladding layer 18 of the first section A and the lower layer 18 of the second section B. During wafer processing, a portion of the wafer adjacent to the sidewall 15 is typically removed because it is unusable. In at least one embodiment, the removed edge of the wafer is about 3 mm, and the first carrier 10 is configured to accommodate this removed edge.

[0080] Figure 3D According to at least one embodiment, Figure 3B The top view of the first carrier 10 is shown. Figure 3DAs shown, at least because the cladding upper layer 12 is provided over the entire core material 14, a portion of the core material 14 is visible when the opening 17 is expanded to produce a perforation through the core material 14 and the cladding lower layer 18. According to some embodiments, the resulting first carrier 10 is thus formed of two distinct components, namely, carrier sections A, B separated by the opening 17, as shown in FIG. Figure 3D What you see in .

[0081] Figures 4A-4D The preparation and formation of the second carrier 20 are depicted. When the first carrier 10 is placed on the second carrier 20, the second carrier 20 is a support member that supports the first carrier 10, such as Figure 1 shown.

[0082] In some embodiments, the processing and construction of the first carrier 10 and the second carrier 20 differ from each other. For example, according to some embodiments, the first carrier 10 is manufactured using two different etching processes, while in some embodiments, the second carrier 20 can be made using a single etching process. As another example, the structural configurations of the first and second carriers 10, 20 can differ in terms of carrier size and profile. As described above, the first carrier is provided with a stepped opening 17. In contrast, the second carrier 20 is provided as a single structure with protrusions, as described in more detail below.

[0083] According to at least one embodiment, Figure 4A FIG is a cross-sectional view of the second carrier 20 in the patterned dual carrier 100. The second carrier comprises a layer of core material 24 sandwiched between an upper layer 22 of cladding material and a lower layer 28 of cladding material. Figure 4A As shown, an etch-resistant layer 26 is provided on top of a portion of the upper layer 22 of cladding material.

[0084] It should be understood that this is for ease of illustration and that the size and number of openings in the second carrier 20 may vary depending on certain embodiments. For example, Figure 4C and 4D The depiction of the second carrier 20 in the figure can depict approximately half of the second carrier 20 (i.e., the portion of the carrier 10 having one opening), and the full length of the second carrier 20 can be sized to accommodate two openings in the length direction of the second carrier 20 and two openings in the width direction.

[0085] Figure 4C According to at least one embodiment, Figure 4A The top view of the second carrier 20 is shown. Figure 4C As shown, an etch-resistant layer 26 is located above the upper layer 22 of the encapsulating material, and at portions of the carrier 20 where the etch-resistant layer 26 is not provided, a lower layer 28 of the encapsulating material is visible when viewed from the top.

[0086] Figure 4B According to at least one embodiment, a cross-sectional view of the second carrier 20 after etching to form a platform is shown. More specifically, Figure 4B The second carrier 20 is depicted after being wet etched with acid. After etching, the portion of the core material 24 and the cladding upper layer 22 not covered by the etch-resistant layer 26 is no longer present. The remaining structure includes the cladding lower layer 28, which forms a platform or base for the remaining portion of the second carrier 20.

[0087] Specifically, the coating lower layer 28 is configured as an elongated planar portion. The core material 24 that is not removed by etching and the remaining portion of the coating upper layer 22 form a protrusion 23. The protrusion 23 is arranged on the coating lower layer 28 so that the coating lower layer 28 provides support for the protrusion 23 and provides structural stability to the second carrier 20, wherein the base formed by the lower layer 28 and the protrusion 23 serve as a platform. The materials of the core material 24 and the upper layer 22 and / or the lower layer 28 can be different in composition to provide different wet etching rates for selectivity. When the second carrier 20 is assembled with the first carrier, the lower layer 28 extends in a lateral direction on either side of the protrusion 23 to support the first segment and the second segment of the first carrier 10 on the opposite side of the protrusion 23.

[0088] Figure 4D According to at least one embodiment, Figure 4B The top view of the second carrier 20 is shown. Figure 4D As shown, when the second carrier 20 is etched, the etching-proof layer 26 protects a portion of the upper layer 22 of the cladding material above a portion of the core material 24, while the remaining upper layer 22 and the core material 24 are removed, thereby leaving only the lower layer 28 located below the protrusion 23. Therefore, as seen in the top view, only the cladding upper layer 22 and the cladding lower layer 28 are visible.

[0089] Figure 5A According to at least one embodiment, a cross-sectional view of a dual carrier 100 with a wafer 101 attached is shown. More specifically, Figure 5A A dual carrier 100 is depicted, formed by a first carrier 10 and a second carrier 20 assembled together, and a wafer 101 is arranged so that the main axis of the body 101 is supported by a protrusion 23 of the second carrier 20 below. When the first carrier 10 and the second carrier 20 are assembled together, at least part of the upper cladding layer 22 of the second carrier 20 is flush with (level with) at least part of the layer of the core material 14 of the first carrier 10, i.e., the level of at least part of the upper cladding layer 22 is the same level as that of at least part of the layer of the core material 14. Further, as Figure 5A As shown, the majority of the wafer is supported directly by protrusions 23. This configuration helps to secure wafer 101 in place.

[0090] Further, the portion of the wafer 101 that protrudes beyond the protrusion 23 in the length direction occupies the space formed by the opening 17 (step-shaped opening) of the staggered portion of the first carrier 10. That is, in some embodiments, the wafer 101 is positioned to occupy the space spanning the distance between the edges 15 of the opening 17. The wafer 101 is attached to the edge 15 of the first carrier 10. For example, in some embodiments, the wafer 101 is attached to the edge 15 with an adhesive 31 (e.g., a thermoplastic adhesive). More specifically, an adhesive 31 can be provided between the edge 15 of the first carrier 10 and a portion of the core material 24, extending over the cladding upper layer 22 of the second carrier 22, so that when the carrier 100 holds the wafer 101, the wafer 101 contacts the adhesive 31. In this way, the wafer 101 is physically attached to the first carrier 10.

[0091] Wafer 101 can be oriented so that its first surface 121 (e.g., top surface) is a free surface that does not contact dual carrier 100. Instead, second surface 111 (e.g., bottom surface), serving as the back surface, is positioned against the upper surface of protrusion 23, i.e., the upper surface of cladding upper layer 22 of second carrier 20. According to some embodiments, neither first surface 121 nor second surface 111 has adhesive applied thereto for attaching wafer 101 to carrier 101. Specifically, in at least one embodiment, the entire BEOL processing can be performed without ever applying adhesive to the top or bottom surfaces of wafer 101. At most, adhesive may be present at sidewalls 15 of opening 17 to secure the wafer in place.

[0092] Figure 5B According to at least one embodiment, a cross-sectional view of the dual carrier 100 after wafer thinning is shown. Figure 5B As reflected in FIG. 1 , the wafer 101 is thinned to reduce the height of the wafer 101. Specifically, in some embodiments, the wafer 101 can be thinned to reduce its height from its original height protruding above the cladding upper layer 12 of the first carrier 10 to be flush with the cladding upper layer 12.

[0093] In some embodiments, thinning of the wafer 101 may be achieved using polishing. Figure 5B As shown, when thinning is performed, the wafer 101 maintains the original orientation in which it was attached and connected to the dual carrier 100. That is, the free surface 121 of the wafer 101 is the uppermost surface aligned with the cladding upper layer 12, and the bottom surface 111 is positioned against the protrusion 23 of the second carrier 20. As described below, the same physical assembly of the wafer 101 in the first carrier 10 can be used both for thinning the wafer and for dicing the wafer on the dicing table.

[0094] Figure 5CAccording to at least one embodiment, the dual carrier 100 is a cross-sectional view after the wafer 101 is separated from the second carrier 20 of the dual carrier 100. More specifically, Figure 5C The first carrier 10 and wafer 101 are depicted after thinning the wafer 101 when detached from the second carrier 20. The first carrier 10 holding the wafer 101 is detached from the second carrier 20 in preparation for dicing. The thinned wafer 101 maintains its position relative to the first carrier 10 so as to be held between the edges 15 of the cladding upper layer 12 and supported by the portion of the core material 14 that extends beyond the edges 15 of the upper layer 12.

[0095] Figure 5D According to at least one embodiment, a cross-sectional view of a portion of the dual carrier 100 after being separated from the wafer 101 is shown. More specifically, Figure 5D The second carrier 20 is depicted detached from the first carrier 10 holding the thinned wafer 101. Second carrier 20 is detached from the first carrier, such that protrusions 23 no longer support wafer 101, and bottom surface 111 of wafer 101 no longer abuts protrusions 23. Instead, bottom surface 111 is free and unobstructed, except for those portions contacting edge 15 of upper layer 12 of the first carrier. In at least one embodiment, detachment of wafer 101 from dual carrier 100 can be achieved through van der Waals forces between the molecules of the associated components; alternatively or additionally, a heat-release bonding material can also be applied.

[0096] Figure 6A According to at least one embodiment, a cross-sectional view of a portion of a dual carrier 100 positioned on a platform is shown. Specifically, Figure 6A shows that, for example, compared to Figure 5C , with the first carrier 10 in an inverted orientation. In at least one embodiment, after the wafer 101 has been thinned and after the second carrier 20 has been detached from the first carrier, the assembly of the first carrier 10 holding the wafer 101 is flipped. That is, the wafer 101 is inverted without removing it from the first carrier 10. The semiconductor device 50 (e.g., an integrated circuit) made from the wafer 101 is held in the carrier 100.

[0097] like Figure 6A As shown, when inverted, surface 111 of wafer 101 is no longer the bottom surface of wafer 101; it is the top surface, and a large portion of surface 111 is exposed and unobstructed. Furthermore, when inverted, surface 121 of wafer 101 is no longer the free top surface, but the bottom surface of wafer 101. In the inverted state, the assembly of first carrier 10 and wafer 101 is positioned on top of cutting table 40 to prepare for cutting wafer 101. When wafer 101 is placed on cutting table 40, a cutting tool is positioned above wafer 101.

[0098] In this way, wafer 101 can be transported to dicing table 40 without removing wafer 101 from first carrier 10, thereby avoiding the need for a separate debonding process to detach the wafer from its support. In particular, the laser debonding process can be completely eliminated. By omitting the debonding process, the risk of damaging the fragile, thinned wafer 101 is reduced. In this way, wafer yield can be increased, i.e., fewer wafers are potentially damaged.

[0099] Figure 6B According to at least one embodiment, a cross-sectional view of a portion of a dual carrier positioned on a stage during wafer dicing is shown. A dicing tool is used to dice wafer 101 into a plurality of dies, for example, at demarcation points 60. The dicing tool is used while wafer 101 is still on carrier 101; in other words, wafer 101 does not need to be transported to another location, but can be diced in situ. In other words, thinned wafer 101 does not need to be transported from the location where it was thinned to the location where it is subsequently diced.

[0100] Figure 6C According to at least one embodiment, a cross-sectional view of a portion of dual carrier 100 is shown positioned on dicing table 40 with wafer 101 in a diced state. More specifically, after dicing with a dicing tool, wafer 101 is separated into a plurality of individual dies, including two outermost dies 103 (silicon edges) and inner dies 105. For various manufacturing reasons related to BEOL processing phenomena, the outermost dies 103 are generally inferior to the inner dies 105 and are typically discarded (i.e., these portions are the edges that are removed). The remaining dies 105 are then retained for further processing without the need for debonding, as the dies 105 have already been diced and can be removed from carrier 10.

[0101] According to some embodiments, after the first carrier 10 is separated from the second carrier 20, the second carrier 20 can be recycled. In some embodiments, after the wafer 101 is cut, the first carrier 10 and the second carrier 20 can be recycled at the same time. Figure 6C As shown, the outermost die 103 is adjacent to the position of the adhesive 31 on the edge 15 of the first carrier's encapsulated upper layer 12. When the first carrier 10 is recycled, the outermost die 103 and the adhesive 31 can be removed. The adhesive 31 can be removed by applying heat and / or a chemical composition to the adhesive.

[0102] It should be understood that the aforementioned embodiments are merely illustrative. Other dual carrier geometries may also be employed. Furthermore, carrier 100 is not limited to a two-component carrier, but may be formed from fewer or additional components. Furthermore, in some embodiments, further processing may be performed using the aforementioned first carrier 10 and / or second carrier 20 or other components. For example, in addition to dicing wafer 101, dicing table 40 may be used for processes including post-grinding and other BEOL processing of wafer 101. Figure 9 According to at least one embodiment, an exemplary process diagram of a method 900 for manufacturing a dual carrier is depicted. The method includes: constructing a first carrier 10 (901) according to the above-mentioned techniques. More specifically, the first carrier 10 is made of a core layer 14, a cladding upper layer 12, and a lower layer 18, and these components can be combined as described above. Figure 7 and 8 That is, it can be formed and assembled using Figure 8 The dispenser shown is made of an upper layer 12 and a lower layer 18. The cladding upper layer 12 and the lower layer 18 can be attached to the core layer 14, for example by fusing. The core layer 14 is thus sandwiched between the upper layer 12 and the lower layer 18. The second carrier 20 is made in a similar manner.

[0103] In at least one embodiment, after the first carrier 10 is manufactured, the first carrier 10 is subjected to a first patterning and etching process (902). More specifically, an etch-resistant layer 16 is provided on the cladding upper layer 12 for patterning, i.e., determining which portions will be retained or removed by etching. Next, etching (e.g., wet etching) is performed to remove a portion of the upper cladding layer 12, thereby exposing a portion of the core layer 14. In this way, a stepped portion of the carrier 10 is formed, in which sidewalls 15 are present. Next, a second patterning and etching process (903) is performed. In this second process, an etch-resistant layer 16 is provided to extend along the main surface of the cladding upper layer 12 through the sidewalls 15. Etching (e.g., wet etching) is performed to establish openings 17, which divide the first carrier 10 into the following sections: Figure 3B A first segment A and a second segment B are shown, thereby obtaining a segmented carrier (904).

[0104] Method 900 also involves constructing a second carrier 20 (905). Figure 7-8The core layer 24, the cladding upper layer 22, and the lower layer 28 are formed using the techniques shown and described, and the core 24 is attached to the upper layer 22 and the lower layer 28. Next, the second carrier 20 is subjected to patterning and etching (906). An etch-resistant layer 26 is provided on the cladding upper layer 22. Etching (e.g., wet etching) is performed so that the resulting carrier 20 includes a base for the cladding lower layer 28 and a protrusion 23 extending from the base and including the core layer 24 and the upper layer 22, which serves as a platform. Next, the first carrier 10 and the second carrier 20 are assembled together (907).

[0105] Specifically, section A of the first carrier 10 is positioned on a first side of the substrate of the second carrier 20, i.e., at the first substrate portion, and section B of the first carrier 10 is located on a second side of the substrate, i.e., at the second substrate portion opposite the first side, with the protrusion 23 located between sections A and B. As described above, when the second carrier 20 is assembled with the first carrier 10, the horizontal plane of the upper cladding layer 22 of the second carrier 20 is at the same height as the horizontal plane of the core material layer 14 of the first carrier 10. It should be understood that the first carrier 10 and the second carrier 20 can be constructed simultaneously, or the first carrier 10 can be constructed first and then the second carrier 20, or vice versa.

[0106] As used herein, the terms "connected," "coupled," and the like mean the connection of two components directly or indirectly to one another. Such connection may be fixed (e.g., permanent) or removable (e.g., removable or releasable). Such connection may be achieved by two components, or two components and any additional intermediate components, being integrally formed as a single unitary body with one another, or by two components, or two components and any additional intermediate components, being connected to one another.

[0107] References to element positions herein (e.g., "top," "bottom," "above," "below," etc.) are intended only to describe the orientation of the elements in the drawings. It should be noted that the orientation of the elements may differ according to other exemplary embodiments, and such variations are intended to be encompassed within the scope of the present disclosure.

[0108] It is important to note that the construction and arrangement of the various exemplary embodiments are illustrative only. Although only some embodiments are described in detail in this disclosure, those skilled in the art who review this disclosure will readily appreciate that many modifications (e.g., changes in the size, dimensions, structure, shape, and proportions of the various elements; various parameters; mounting arrangements; use of materials; orientation, etc.) can be made without materially departing from the novel teachings and advantages of the subject matter described herein.

[0109] For example, elements shown as integrally formed may be constructed from multiple parts or elements, the positions of elements may be interchanged or otherwise varied, and the nature, quantity, or position of discrete elements may be changed or altered. The order or sequence of any process or method steps may be altered or rearranged according to alternative embodiments. Other substitutions, modifications, changes, and omissions may also be made to the design, operating conditions, and arrangements of the various exemplary embodiments without departing from the scope of the concepts presented herein.

[0110] Although this specification contains many specific implementation details, these specific implementation details should not be construed as limiting the scope of any embodiment or the scope of what can be claimed, but rather as descriptions of specific implementation features of specific embodiments. In this specification, certain features described in the context of separate embodiments may also be implemented in combination in a single embodiment.

[0111] Conversely, various features described in the context of a single embodiment may also be implemented in multiple embodiments individually or in any suitable subcombination. Furthermore, although the features described above may function in certain combinations and may even be initially claimed as such, one or more features in a claimed combination may in some cases be removed from the combination, and the claimed combination may be directed to subcombinations or variations of subcombinations.

Claims

1. A carrier assembly comprising: a first carrier including an opening configured to receive a wafer, the first carrier being divided into a first section and a second section opposite the first section; and A second vector comprising: a protrusion configured to support a wafer; and a base disposed below the protrusion, the base being configured to extend in a lateral direction on either side of the protrusion to support the first section and the second section of the first carrier on opposite sides of the protrusion; The first carrier and the second carrier are constructed of a laminated glass product comprising a plurality of glass layers.

2. The carrier assembly according to claim 1, wherein: The second carrier is configured to support the wafer without adhesive between the bottom of the wafer and the second carrier.

3. The carrier assembly according to claim 1, wherein: The first section of the first carrier comprises: a first cladding layer; a second coating layer; and a core layer between the first cladding layer and the second cladding layer, The first cladding layer is configured to have a size shorter than the lengths of the second cladding layer and the core layer.

4. The carrier assembly according to claim 3, wherein: The core layer has a thermal expansion coefficient greater than that of the first cladding layer or the second cladding layer.

5. The carrier assembly according to claim 1, wherein: The first section of the first carrier comprises: a first cladding layer; a second coating layer; and a core layer between the first cladding layer and the second cladding layer; The opening is configured such that a distance between the first coating of the first section and the first coating of the second section exceeds a distance between the second coating of the first section and the second coating of the second section.

6. The carrier assembly according to claim 1, wherein: The first section and the second section of the first carrier each include: a first cladding layer; a second coating layer; and a core layer between the first cladding layer and the second cladding layer, The first cladding layer is configured to have a size shorter than the lengths of the second cladding layer and the core layer.

7. The carrier assembly according to any one of claims 1 to 5, wherein: The first carrier is configured to support the wafer when the second carrier is detached from the first carrier.

8. The carrier assembly according to any one of claims 1 to 5, wherein: The opening is formed into a T-shape.

9. The carrier assembly according to any one of claims 1 to 5, wherein: The first carrier is configured such that when the first carrier is inverted, the first carrier maintains the position of the wafer and the wafer is received in the opening.

10. The carrier assembly of any one of claims 1-5, further comprising a plurality of openings.

11. The assembly of claim 3, wherein: The ratio of the thickness of the core layer to the thickness of the first support is at least 0.

8.

12. A method for processing a wafer using the carrier assembly according to any one of claims 1 to 11, the method comprising: supporting a wafer in a first carrier, which is in turn supported by a second carrier; thinning the wafer while the wafer is in the first carrier; separating the first carrier from the second carrier; inverting the wafer and the first carrier; and The wafer and the first carrier are placed on a cutting table.

13. The method of claim 12, further comprising: While the wafer is inverted on the dicing table and held in the first carrier, the wafer is diced to obtain a plurality of dies.

14. The method of claim 13, further comprising removing the die while the die is on the dicing table and in the first carrier.

15. The method of any one of claims 12 to 14, further comprising: While the wafer is supported by the first carrier, the wafer is transported to a cutting station.

16. A method for manufacturing the carrier assembly according to any one of claims 1 to 11, the method comprising: The first vector of the vector assembly is constructed by the following steps: attaching a first cladding layer of a first carrier to the first core layer; as well as attaching the second cladding layer of the first carrier to the first core layer such that the first core layer is sandwiched between the first cladding layer and the second cladding layer of the first carrier; performing a first etching process on the first carrier to expose a portion of the first core layer; as well as A second etching process is performed on the first carrier to form a through-hole, wherein the formation of the through-hole divides the first carrier into a first section and a second section.

17. The method of claim 16, further comprising: The second vector was constructed by the following steps: attaching the first cladding layer of the second carrier to the second core layer; as well as attaching the second cladding layer of the second carrier to the second core layer such that the second core layer is sandwiched between the first cladding layer and the second cladding layer of the second carrier; The second carrier is subjected to a first etching process to produce protrusions and a base.

18. The method of claim 17 further comprising assembling the first carrier and the second carrier by placing the first segment on a first portion of a base of the second carrier at a first side of the protrusion, and placing the second segment on a second portion of the base of the second carrier at a second side of the protrusion opposite to the first side.

19. The method according to any one of claims 16 to 18, wherein The first etching process includes placing an etch-resistant layer on a portion of the first cladding layer of the first carrier, and the second etching process includes placing the etch-resistant layer to extend past an edge of the first cladding layer.

20. The method of claim 17, wherein: The first cladding layer and the second cladding layer of the first carrier are attached to the first core layer by a fusion process.

Images