Substrate processing equipment

Abstract

A substrate processing device is provided. The substrate processing device includes a process chamber, a chuck, and a focus ring, wherein: the process chamber provides a process processing space for a substrate; the chuck supports the substrate; the focus ring is arranged to surround the edge of the chuck, wherein the focus ring includes a plurality of layers with different dielectric constants, and the dielectric constant and shape of each of the plurality of layers are determined to reduce the change of the electric field that changes with the etching of the focus ring.

Description

Technical Field

[0001] The invention relates to a substrate processing device. Background Art

[0002] When manufacturing semiconductor devices or display devices, various processes such as photolithography, etching, ashing, ion implantation, thin film deposition, and cleaning are performed. Here, the photolithography process includes coating, exposure, and development processes. A photosensitive liquid is coated on a substrate (i.e., a coating process), a circuit pattern is formed on the substrate with a photosensitive film (i.e., an exposure process), and the exposed area of ​​the substrate is selectively developed (i.e., a development process).

[0003] Generally, in a semiconductor manufacturing process, plasma can be used to etch a thin film formed on a wafer or a substrate. Through an electric field formed inside a process chamber, the plasma can collide with the wafer or the substrate, thereby achieving etching of the thin film.

[0004] In order to increase the concentration of plasma concentrated at the edge of the wafer or substrate, a ring member may be provided along the edge of the wafer or substrate. The plasma is concentrated at the edge of the wafer or substrate by the ring member, so that high-quality etching can be performed not only on the central portion of the wafer or substrate but also on the edge. Summary of the invention

[0005] Technical issues solved

[0006] The problem to be solved by the present invention is to provide a substrate processing device.

[0007] Problems of the present invention are not limited to the problems mentioned above, and other problems not mentioned will be clearly understood by those skilled in the art through the following description.

[0008] Solution to the problem

[0009] To solve the above-mentioned problems, one aspect of the substrate processing device of the present invention includes a process chamber, a chuck and a focus ring, wherein: the process chamber provides a process processing space for a substrate; the chuck supports the substrate; the focus ring is arranged around the edge of the chuck, wherein the focus ring includes a plurality of layers with different dielectric constants, and the dielectric constant and shape of each of the plurality of layers are determined so that the change of the electric field that changes with the etching of the focus ring is weakened.

[0010] The focusing ring includes a base layer and a reinforcement layer, wherein the reinforcement layer has a higher dielectric constant than the base layer and is stacked on the base layer, wherein the base layer includes a first plane portion, a second plane portion and an inclined portion, wherein: the first plane portion is parallel to the ground and adjacent to the substrate; the second plane portion is parallel to the ground and farther away from the substrate than the first plane portion; the inclined portion is inclined relative to the ground and connects the first plane portion and the second plane portion.

[0011] The inclined portion is formed such that a distance between the inclined portion and the ground increases as the inclined portion moves away from the substrate.

[0012] The reinforcing layer is formed to be thicker at the second planar portion than at the first planar portion and the inclined portion.

[0013] The reinforcing layer is formed so that its thickness increases as it becomes farther away from the substrate.

[0014] The reinforcement layer includes a plurality of sub-reinforcement layers having different dielectric constants.

[0015] The thickness of the plurality of sub-reinforcement layers becomes thicker in a direction from the uppermost sub-reinforcement layer toward the base layer.

[0016] The thicknesses of the plurality of sub-reinforcement layers become thinner in a direction from the uppermost sub-reinforcement layer toward the base layer.

[0017] To solve the above-mentioned problems, another aspect of the substrate processing device of the present invention includes a process chamber, a base plate, a chuck, a main body, a focusing ring and a ring support, wherein: the process chamber provides a process processing space for the substrate; the base plate is provided as an insulator; the chuck supports the substrate; the main body is arranged between the base plate and the chuck; the focusing ring is arranged to surround the edge of the chuck and includes a base layer and a reinforcement layer, wherein the reinforcement layer has a higher dielectric constant than the base layer and is stacked on the base layer; and the ring support supports the focusing ring relative to the base plate.

[0018] The above-mentioned base layer includes a first planar portion, a second planar portion and an inclined portion, wherein: the above-mentioned first planar portion is parallel to the ground and adjacent to the above-mentioned substrate; the above-mentioned second planar portion is parallel to the ground and farther away from the above-mentioned substrate than the above-mentioned first planar portion; the above-mentioned inclined portion is inclined relative to the ground and connects the above-mentioned first planar portion and the above-mentioned second planar portion.

[0019] The inclined portion is formed such that a distance between the inclined portion and the ground increases as the inclined portion moves away from the substrate.

[0020] The reinforcing layer is formed to be thicker at the second planar portion than at the first planar portion and the inclined portion.

[0021] The reinforcing layer is formed so that its thickness increases as it becomes farther away from the substrate.

[0022] The reinforcement layer includes a plurality of sub-reinforcement layers having different dielectric constants.

[0023] To solve the above-mentioned problems, one aspect of the substrate supporting portion of the present invention includes a base plate, a chuck, a main body, a focusing ring and a ring supporting body, wherein: the above-mentioned base plate is provided as an insulator; the above-mentioned chuck supports the substrate; the above-mentioned main body is arranged between the above-mentioned base plate and the above-mentioned chuck; the above-mentioned focusing ring is arranged to surround the edge of the above-mentioned chuck and includes a base layer and a reinforcement layer, wherein the above-mentioned reinforcement layer has a higher dielectric constant than the above-mentioned base layer and is stacked on the above-mentioned base layer; the above-mentioned ring supporting body supports the above-mentioned focusing ring relative to the above-mentioned base plate.

[0024] The above-mentioned base layer includes a first planar portion, a second planar portion and an inclined portion, wherein: the above-mentioned first planar portion is parallel to the ground and adjacent to the above-mentioned substrate; the above-mentioned second planar portion is parallel to the ground and farther away from the above-mentioned substrate than the above-mentioned first planar portion; the above-mentioned inclined portion is inclined relative to the ground and connects the above-mentioned first planar portion and the above-mentioned second planar portion.

[0025] The inclined portion is formed such that a distance between the inclined portion and the ground increases as the inclined portion moves away from the substrate.

[0026] The reinforcing layer is formed to be thicker at the second planar portion than at the first planar portion and the inclined portion.

[0027] The reinforcing layer is formed so that its thickness increases as it becomes farther away from the substrate.

[0028] The reinforcement layer includes a plurality of sub-reinforcement layers having different dielectric constants.

[0029] Specific details of other embodiments are included in the detailed description and accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 FIG. 1 is a diagram showing a substrate processing apparatus according to an embodiment of the present invention.

[0031] Figure 2 It is shown Figure 1 Diagram of the focus ring shown.

[0032] Figure 3 It is shown Figure 2 A diagram of a cross section of a focus ring is shown.

[0033] Figures 4 to 8is a diagram showing a cross section of a focus ring according to another embodiment of the present invention. DETAILED DESCRIPTION

[0034] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. With reference to the embodiments described in detail below in conjunction with the accompanying drawings, the advantages and features of the present invention and the methods for achieving the advantages and features will become clear. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various different forms, and the present embodiments are provided only to complete the disclosure of the present invention and to fully inform the scope of the invention to a person of ordinary skill in the art to which the present invention belongs, and the present invention is limited only by the scope of the claims. Throughout the specification, the same reference numerals refer to the same constituent elements.

[0035] When an element or layer is referred to as being "above" or "over" another element or layer, it includes not only being directly above another element or layer, but also including the case where another layer or element intervenes. Conversely, when an element is referred to as being "directly above" or "directly over," it means that there is no other element or layer intervening.

[0036] Spatially relative terms such as "below", "below", "lower", "above", "upper", etc. may be used to facilitate description of the relationship between an element or constituent element as shown in the figure and other elements or constituent elements. Spatially relative terms should be understood as terms that include different directions of the element when in use or in operation in addition to the direction shown in the figure. For example, in the case where the elements shown in the figure are flipped, an element described as being "below" or "below" another element may be positioned "above" another element. Therefore, the exemplary term "below" may include both below and above directions. Elements may also be oriented in other directions, and therefore spatially relative terms may be interpreted based on the orientation.

[0037] Although the terms first, second, etc. are used to describe various elements, constituent elements and / or parts, it is clear that these elements, constituent elements and / or parts are not limited by these terms. These terms are only used to distinguish one element, constituent element or part from other elements, constituent elements or parts. Therefore, within the technical concept of the present invention, the first element, first constituent element or first part mentioned below can obviously also be the second element, second constituent element or second part.

[0038] The terms used in this specification are used to describe the embodiments and are not intended to limit the present invention. In this specification, unless otherwise specified in a sentence, the singular form also includes the plural form. The "comprises" and / or "comprising" used in the specification means including the mentioned constituent elements, steps, operations and / or elements, without excluding the existence or addition of more than one other constituent elements, steps, operations and / or elements.

[0039] Unless otherwise defined, all terms (including technical terms and scientific terms) used in this specification can be used as meanings that are generally understood by those of ordinary skill in the art to which the present invention belongs. In addition, unless clearly and specifically defined, terms defined in commonly used dictionaries should not be interpreted in an idealized or excessive manner.

[0040] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, and when describing with reference to the accompanying drawings, the same or corresponding components are given the same reference numerals regardless of the drawing numbers, and repeated description thereof is omitted.

[0041] Figure 1 FIG. 1 is a diagram showing a substrate processing apparatus according to an embodiment of the present invention.

[0042] refer to Figure 1 The substrate processing device 10 is configured to include a process chamber 100, a substrate support part 200, a shower head 300, a first gas tank 410, a second gas tank 420, a first power supply part 510, a second power supply part 520, a third power supply part 530, a heater 600, a heat medium supply part 710 and a coolant supply part 720.

[0043] The process chamber 100 provides a processing space 101 for a substrate W. A discharge port 120 may be provided at a bottom surface of the process chamber 100. The discharge port 120 is connected to a discharge pipe 121. Byproducts and gases generated in the process of the substrate W may be discharged to the outside through the discharge port 120 and the discharge pipe 121.

[0044] The process chamber 100 may be provided with a liner 130 inside. The liner 130 may prevent the inner surface of the process chamber 100 from being damaged due to arc discharge, and may prevent impurities generated when a process is performed on the substrate W from being deposited into the process chamber 100. To this end, the liner 130 may be attached to the inner surface of the process chamber 100 to surround the substrate support part 200.

[0045] The substrate support part 200 plays a role of supporting the substrate W. The substrate support part 200 may be disposed at a lower portion of the processing space 101 .

[0046] The substrate support part 200 is configured to include a base plate 210 , a body 220 , a chuck 230 , a focus ring 240 , and a ring support 250 .

[0047] The base plate 210 plays a role of supporting the body 220, the chuck 230, the focus ring 240, and the ring support 250. The base plate 210 may be an insulator.

[0048] The main body 220 may be disposed between the base plate 210 and the chuck 230. A heat medium circulation pipe 221 and a refrigerant circulation pipe 222 may be disposed inside the main body 220. Heat medium may circulate through the heat medium circulation pipe 221, and refrigerant may circulate through the refrigerant circulation pipe 222. The heat medium circulation pipe 221 and the refrigerant circulation pipe 222 may be arranged in a spiral shape inside the main body 220. As heat medium circulates through the heat medium circulation pipe 221, the main body 220 may be heated, and as refrigerant circulates through the refrigerant circulation pipe 222, the main body 220 may be cooled.

[0049] The body 220 may be made of metal. The chuck 230 in close contact with the body 220 may be affected by the temperature of the body 220. As the body 220 is heated, the chuck 230 may be heated, and as the body 220 is cooled, the chuck 230 may be cooled.

[0050] A heat medium supply pipe 221a for supplying heat medium to an upper portion of the chuck 230 may be connected to the heat medium circulation pipe 221. The heat medium may be supplied to the substrate W through the heat medium supply pipe 221a.

[0051] The heat medium supply part 710 supplies heat medium to the heat medium circulation pipe 221, and the refrigerant supply part 720 may supply refrigerant to the refrigerant circulation pipe 222. In the present invention, the heat medium as an inert gas may be helium, but the heat medium of the present invention is not limited to helium.

[0052] The chuck 230 plays a role of supporting the substrate W. In the present invention, the chuck 230 may be an electrostatic chuck. That is, the chuck 230 may adsorb the substrate W by electrostatic force. However, the chuck 230 of the present invention is not limited to the electrostatic chuck, and the chuck 230 may also clamp and support the substrate W in a mechanized manner. Hereinafter, the case where the chuck 230 is an electrostatic chuck will be mainly described.

[0053] The body of the chuck 230 may be a dielectric. An electrostatic electrode 231 and a heating unit 232 may be provided inside the chuck 230. The electrostatic electrode 231 may be electrically connected to the second power supply part 520. The electrostatic electrode 231 may generate an electrostatic force by the power supplied from the second power supply part 520. The substrate W may be adsorbed onto the chuck 230 by the electrostatic force.

[0054] The heating unit 232 may be electrically connected to the third power supply part 530. The heating unit 232 may be heated by the power supplied from the third power supply part 530. The heat of the heating unit 232 may be transferred to the substrate W. The substrate W may be kept at a certain temperature by the heat of the heating unit 232. The heating unit 232 may be provided in the shape of a coil and arranged in a spiral shape inside the chuck 230.

[0055] The second power supply part 520 supplies power to the electrostatic electrode 231, and the third power supply part 530 may supply power to the heating unit 232. Here, the power supplied by the second power supply part 520 may be direct current power.

[0056] The focus ring 240 may be provided in a ring shape and arranged to surround the edge of the chuck 230. The focus ring 240 plays a role in adjusting the electric field formed at the edge of the chuck 230. To this end, the focus ring 240 may be formed of a material having a certain dielectric constant.

[0057] The ring support 250 may support the focus ring 240 relative to the base plate 210. The focus ring 240 may be maintained at a certain height relative to the base plate 210 by the ring support 250 and may be maintained in a state of surrounding the edge of the chuck 230. The ring support 250 may be formed of an insulating material.

[0058] While the process is performed on the substrate W by plasma, the focus ring 240 may be etched. As described above, the focus ring 240 has a certain dielectric constant and adjusts the electric field formed at the edge of the chuck 230, wherein when the focus ring 240 is etched, the overall dielectric constant changes, thereby possibly changing the shape of the electric field. The electric field may determine the direction of the plasma entering the substrate W. As the shape of the electric field changes, the direction of the plasma entering the substrate W changes, and an appropriate process may not be performed on the substrate W.

[0059] The focus ring 240 that cannot form an appropriate electric field may be replaced with a new focus ring 240. When the thickness of the focus ring 240 is formed thicker, the service life of the focus ring 240 may be increased, but when the focus ring 240 is too thick, an inappropriate electric field may also be formed.

[0060] Therefore, the focus ring 240 according to an embodiment of the present invention may be composed of a plurality of layers. The dielectric constant and shape of each of the plurality of layers may be determined so that the change in the electric field that changes as the focus ring 240 is etched is weakened. For example, the respective layers have different dielectric constants, and in the case where the upper layer is removed by etching, the focus ring 240 with a reduced height forms an electric field similar to the previous one. Figures 2 to 7 The focus ring 240 is described in detail.

[0061] The shower head 300 plays a role of spraying a process gas for performing a process on the substrate W toward the substrate W. The shower head 300 may be disposed at an upper portion of the processing space 101. The process gas sprayed from the shower head 300 is sprayed in a downward direction to reach the substrate W.

[0062] In the present invention, the process gas for processing the substrate W may include a first process gas GS1 and a second process gas GS2. The first process gas GS1 and the second process gas GS2 may flow into the processing space 101 through the process gas inlet 110. A first inflow pipe 111 and a second inflow pipe 112 may be connected to the process gas inlet 110. The first process gas GS1 moves through the first inflow pipe 111 and flows into the processing space 101, and the second process gas GS2 may move through the second inflow pipe 112 and flow into the processing space 101.

[0063] The first process gas GS1 and the second process gas GS2 may react with each other and be sprayed to the substrate W. For example, the first process gas GS1 acts as a reaction gas, and the second process gas GS2 acts as a source gas. That is, the first process gas GS1 may activate the second process gas GS2. The first process gas GS1 may react with the second process gas GS2 after being converted into plasma. Hereinafter, the plasma generated using the first process gas GS1 is referred to as the first plasma.

[0064] The nozzle 300 may spray the first process gas GS1 and the second process gas GS2 onto the substrate W. The first process gas GS1 and the second process gas GS2 may be sprayed sequentially. After being sprayed through the nozzle 300, the first process gas GS1 and the second process gas GS2 may collide with each other to react. In addition, the second process gas GS2 activated by the first process gas GS1 reaches the substrate W, thereby performing a process on the substrate W. For example, the activated second process gas GS2 may be deposited onto the substrate W in the form of a thin film.

[0065] The showerhead 300 is configured to include an electrode plate 310, a spray portion 320, and an annular dielectric plate 330. The electrode plate 310 can receive RF power. The RF power can be provided by a first power supply portion 510. A wider surface on one side of the electrode plate 310 can be arranged to be closely attached to the inner upper surface of the process chamber 100.

[0066] The injection part 320 is arranged at the lower side of the electrode plate 310 and plays the role of injecting the first process gas GS1 and the second process gas GS2. To this end, the injection part 320 may be provided with an injection hole SH for injecting the first process gas GS1 and the second process gas GS2. The first process gas GS1 and the second process gas GS2 may flow into the processing space 101 through the injection hole SH.

[0067] The annular dielectric plate 330 serves to electrically isolate the electrode plate 310 from the injection portion 320. To this end, the annular dielectric plate 330 may be made of a dielectric material and disposed between the electrode plate 310 and the injection portion 320. The annular dielectric plate 330 may be arranged in a ring shape at the edge between the electrode plate 310 and the injection portion 320. In addition, the electrode plate 310 and the injection portion 320, except for the edge, may be spaced apart from each other by a certain distance. Therefore, a certain space may be formed between the electrode plate 310 and the injection portion 320. Hereinafter, the space formed between the electrode plate 310 and the injection portion 320 is referred to as the gas processing space 102.

[0068] The gas processing space 102 may be communicated with the injection holes SH.

[0069] The second process gas GS2 supplied to the injection part 320 may be discharged through the injection hole SH while being diffused in the gas processing space 102. Hereinafter, the plasma generated using the second process gas GS2 is referred to as the second plasma. The second process gas GS2 may be provided as silane (SiH 4 ). The second plasma may include hydrogen plasma.

[0070] The first gas tank 410 may contain a first process gas GS1, and the second gas tank 420 may contain a second process gas GS2. A first valve V1 is provided on the first inflow pipe 111 connecting the first gas tank 410 and the process gas inlet 110, and similarly, a second valve V2 is provided on the second inflow pipe 112 connecting the second gas tank 420 and the process gas inlet 110. In the case of performing a process on the substrate W, the first valve V1 and the second valve V2 are opened so that the first process gas GS1 and the second process gas GS2 can be injected into the processing space 101 of the process chamber 100. In addition, at the end of the process on the substrate W, the first valve V1 and the second valve V2 are closed so that the first process gas GS1 and the second process gas GS2 can be blocked from being injected into the interior of the process chamber 100.

[0071] The heater 600 plays a role of heating the injection part 320. The second process gas GS2 injected into the injection part 320 may be injected through the injection hole SH after being heated. As the second process gas GS2 is heated, the reaction of the second process gas GS2 with the first plasma may be more actively performed.

[0072] Figure 2 It is shown Figure 1 The focus ring is shown in Figure 1. Figure 3 It is shown Figure 2 A cross-sectional view of the focus ring is shown, and Figures 4 to 8 is a diagram showing a cross section of a focus ring according to another embodiment of the present invention.

[0073] refer to Figure 2 and Figure 3 , the focusing ring 240 is configured to include a base layer 241 and a reinforcement layer 242 .

[0074] The base layer 241 and the reinforcement layer 242 have different dielectric constants, and the reinforcement layer 242 may be stacked on the base layer 241. Specifically, the reinforcement layer 242 may be formed of a material having a higher dielectric constant than the base layer 241.

[0075] The base layer 241 may include a first plane portion 241a, a second plane portion 241b, and an inclined portion 241c. The first plane portion 241a may be parallel to the ground and adjacent to the substrate W. The second plane portion 241b may be parallel to the ground and may be further away from the substrate W than the first plane portion 241a. The inclined portion 241c may be inclined relative to the ground and connect the first plane portion 241a and the second plane portion 241b.

[0076] The inclined portion 241 c may be formed such that the distance from the ground increases as it is farther away from the substrate W. Therefore, the height of the second plane portion 241 b may be formed to be higher than that of the first plane portion 241 a.

[0077] The reinforcement layer 242 may be formed to be stacked on the first plane portion 241a, the second plane portion 241b, and the inclined portion 241c as a whole. The reinforcement layer 242 may be formed to be thicker at the second plane portion 241b than at the first plane portion 241a and the inclined portion 241c. The thickness of the reinforcement layer (hereinafter referred to as the second plane layer 242b) stacked on the second plane portion 241b may be formed to be larger than the thickness D1 and D3 of the reinforcement layer (hereinafter referred to as the first plane layer 242a and the inclined layer 242c) stacked on the first plane portion 241a and the inclined portion 241c.

[0078] In the case where the focus ring 240 is etched while a process is performed on the substrate W, the second plane layer 242b may be etched prior to the first plane layer 242a and the inclined layer 242c. Since the second plane layer 242b is formed thicker, the first plane layer 242a and the second plane layer 242b may be etched at substantially the same time. Therefore, a change in the electric field generated as the reinforcing layer 242 and the base layer 241 are simultaneously exposed to the substrate processing space 101 may be prevented.

[0079] refer to Figure 4 , the focusing ring 810 is configured to include a base layer 811 , a reinforcement layer 812 and an additional reinforcement layer 813 .

[0080] The reinforcement layer 812 may include a first planar layer 812a, a second planar layer 812b, and an inclined layer 813c. The additional reinforcement layer 813 may be stacked on the second planar layer 812b. The dielectric constant of the additional reinforcement layer 813 may be the same as or greater than the dielectric constant of the reinforcement layer 812. In the case where the focus ring 810 is etched while the process is performed on the substrate W, the etching of the additional reinforcement layer 813 may be performed preferentially. Since the second planar layer 812b still exists even after the etching of the additional reinforcement layer 813 is completed, the change in the electric field caused by the etching of the focus ring 810 can be weakened.

[0081] refer to Figure 5 , the focusing ring 820 is configured to include a base layer 821 and a reinforcement layer 822 .

[0082] The reinforcing layer 822 may include a first plane layer 822a, a second plane layer 822b, and an inclined layer 822c. The reinforcing layer 822 may be formed such that its thickness becomes thicker as it moves away from the substrate W. The thickness of each of the first plane layer 822a, the second plane layer 822b, and the inclined layer 822c may gradually become thicker as it moves away from the substrate W along the first plane portion 821a, the second plane portion 821b, and the inclined portion 821c of the base layer 821.

[0083] refer to Figure 6 , the focusing ring 830 is configured to include a base layer 831 and a reinforcement layer 832 .

[0084] The reinforcement layer 832 may be configured to include a plurality of sub-reinforcement layers 832a and 832b having different dielectric constants. The uppermost sub-reinforcement layer 832b of the plurality of sub-reinforcement layers 832a and 832b has the highest dielectric constant, and the dielectric constant may decrease toward the lower side. That is, the uppermost sub-reinforcement layer 832b has the highest dielectric constant, the base layer 831 has the lowest dielectric constant, and the middle sub-reinforcement layer 832a may have a dielectric constant of an intermediate size.

[0085] Figure 6The reinforcement layer 832 is shown to include two sub-reinforcement layers 832a and 832b, but according to some embodiments of the present invention, the reinforcement layer 832 may include three or more sub-reinforcement layers.

[0086] The thickness of the sub-reinforcement layers 832a and 832b is as follows: Figure 6 The same may be shown, or Figure 7 and Figure 8 The shown may also be different.

[0087] refer to Figure 7 and Figure 8 , the focusing rings 840 and 850 are configured to include base layers 841 and 851 and reinforcement layers 842 and 852 .

[0088] The reinforcement layers 842 and 852 may be configured to include a plurality of sub-reinforcement layers 842a and 842b and 852a and 852b having different dielectric constants. The uppermost sub-reinforcement layers 842b and 852b of the plurality of sub-reinforcement layers 842a and 842b and 852a and 852b have the highest dielectric constant, and the dielectric constant may decrease toward the bottom.

[0089] like Figure 7 As shown in FIG. 1 , the thickness of the uppermost sub-reinforcement layer 842b among the plurality of sub-reinforcement layers 842a and 842b becomes thicker as it approaches the base layer 841, or as shown in FIG. Figure 8 As shown, the thicknesses of the plurality of sub-reinforcement layers 852 a and 852 b may become thinner in a direction from the uppermost sub-reinforcement layer 852 b toward the base layer 851 .

[0090] In order to make the base layer 851 have a thickness thinner than the sub reinforcement layers 852 a and 852 b , a base support layer 851 a having a dielectric constant different from that of the base layer 851 may be provided at a lower side of the base layer 851 .

[0091] The dielectric constants and thicknesses of the base layers 831 , 841 , and 851 and the sub-strengthening layers 832 a , 832 b , 842 a , 842 b , 852 a , and 852 b may be determined in various manners according to the process environment of the process chamber 100 .

[0092] The embodiments of the present invention are described above with reference to the accompanying drawings, but those skilled in the art will appreciate that the present invention can be implemented in other specific forms without changing its technical ideas or essential features. Therefore, it should be understood that the embodiments described above are exemplary in all aspects and not restrictive.

[0093] Description of Reference Numerals

[0094] 10: Substrate processing device 100: Process chamber

[0095] 110: process gas inlet 111: first inlet pipe

[0096] 112: Second inflow pipe 120: Exhaust port

[0097] 121: exhaust pipe 200: substrate support part

[0098] 210: Base plate 220: Main body

[0099] 230: Chuck

[0100] 240, 810, 820, 830, 840, 850: Focus ring

[0101] 241, 811, 821, 831, 841, 851: base layer

[0102] 242, 812, 822, 832, 842, 852: Strengthening layer

[0103] 250: Ring support 300: Spray head

[0104] 310: Electrode plate 320: Spraying part

[0105] 330: annular dielectric plate 410: first gas tank

[0106] 420: Second gas tank 510: First power supply unit

[0107] 520: Second power supply unit 530: Third power supply unit

[0108] 600: Heater 710: Heat medium supply unit

[0109] 720: Refrigerant Supply Department

Claims

1. A substrate processing device, comprising: A process chamber provides a process processing space for the substrate; A chuck supporting the substrate; as well as a focusing ring arranged around the edge of the chuck, Wherein, the focusing ring comprises a plurality of layers having different dielectric constants, and The dielectric constant and shape of each of the plurality of layers are determined to reduce the change in the electric field that changes with etching of the focus ring; Wherein, the focusing ring comprises a base layer, a reinforcement layer and an additional reinforcement layer; The additional reinforcement layer is formed on the second plane layer of the reinforcement layer and on a portion of the reinforcement layer.

2. The substrate processing apparatus according to claim 1, wherein: The reinforcing layer has a higher dielectric constant than the base layer and is stacked on the base layer, Wherein, the base layer includes: A first plane portion, parallel to the ground and adjacent to the substrate; a second plane portion, parallel to the ground and further away from the substrate than the first plane portion; and The inclined portion is inclined relative to the ground and connects the first planar portion and the second planar portion.

3. The substrate processing apparatus according to claim 2, wherein: The inclined portion is formed such that a distance between the inclined portion and the ground increases as the inclined portion moves away from the substrate.

4. The substrate processing apparatus according to claim 2, wherein: The reinforcement layer is formed to be thicker at the second planar portion than at the first planar portion and the inclined portion.

5. The substrate processing apparatus according to claim 2, wherein: The reinforcement layer is formed so that the thickness thereof becomes thicker as it becomes farther away from the substrate.

6. The substrate processing apparatus according to claim 2, wherein: The reinforcement layer includes a plurality of sub-reinforcement layers having different dielectric constants.

7. The substrate processing apparatus according to claim 6, wherein: The thicknesses of the plurality of sub-reinforcement layers become increasingly thicker in a direction from an uppermost sub-reinforcement layer toward the base layer.

8. The substrate processing apparatus according to claim 6, wherein: The thicknesses of the plurality of sub-reinforcement layers become thinner in a direction from the uppermost sub-reinforcement layer toward the base layer.

9. A substrate processing device, comprising: A process chamber provides a process processing space for the substrate; a base plate, provided as an insulator; A chuck supporting the substrate; A main body, disposed between the base plate and the chuck; a focus ring disposed around an edge of the chuck and comprising a base layer, a reinforcement layer, and an additional reinforcement layer, wherein the reinforcement layer has a higher dielectric constant than the base layer and is laminated on the base layer; and a ring support body, supporting the focus ring relative to the base plate; The additional reinforcement layer is formed on the second plane layer of the reinforcement layer and on a portion of the reinforcement layer.

10. The substrate processing apparatus according to claim 9, wherein: The base layer includes: A first plane portion, parallel to the ground and adjacent to the substrate; a second plane portion, parallel to the ground and further away from the substrate than the first plane portion; and The inclined portion is inclined relative to the ground and connects the first planar portion and the second planar portion.

11. The substrate processing apparatus according to claim 10, wherein: The inclined portion is formed such that a distance between the inclined portion and the ground increases as the inclined portion moves away from the substrate.

12. The substrate processing apparatus according to claim 10, wherein: The reinforcing layer is formed to be thicker at the second planar portion than at the first planar portion and the inclined portion.

13. The substrate processing apparatus according to claim 10, wherein: The reinforcement layer is formed so that the thickness thereof becomes thicker as it becomes farther away from the substrate.

14. The substrate processing apparatus according to claim 10, wherein: The reinforcement layer includes a plurality of sub-reinforcement layers having different dielectric constants.

15. A substrate support portion, comprising: a base plate, provided as an insulator; a chuck supporting a substrate; A main body, disposed between the base plate and the chuck; a focusing ring disposed around an edge of the chuck and comprising a base layer, a reinforcement layer, and an additional reinforcement layer, wherein the reinforcement layer has a higher dielectric constant than the base layer and is laminated on the base layer; and a ring support body, supporting the focus ring relative to the base plate; The additional reinforcement layer is formed on the second plane layer of the reinforcement layer and on a portion of the reinforcement layer.

16. The substrate support portion according to claim 15, wherein: The base layer includes: A first plane portion, parallel to the ground and adjacent to the substrate; a second plane portion, parallel to the ground and further away from the substrate than the first plane portion; and The inclined portion is inclined relative to the ground and connects the first planar portion and the second planar portion.

17. The substrate support portion according to claim 16, wherein: The inclined portion is formed such that a distance between the inclined portion and the ground increases as the inclined portion moves away from the substrate.

18. The substrate support portion according to claim 16, wherein: The reinforcing layer is formed to be thicker at the second planar portion than at the first planar portion and the inclined portion.

19. The substrate support portion according to claim 16, wherein: The reinforcement layer is formed so that the thickness thereof becomes thicker as it becomes farther away from the substrate.

20. The substrate support portion according to claim 16, wherein: The reinforcement layer includes a plurality of sub-reinforcement layers having different dielectric constants.

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