Substrate heat treatment apparatus, substrate heat treatment method, and storage medium

Abstract

The present invention provides a substrate heat treatment apparatus, a substrate heat treatment method, and a storage medium. The substrate heat treatment apparatus includes: a heating unit capable of supporting and heating a substrate formed with a coating film; a chamber that separates a processing space on the heating unit from an external space; a peripheral exhaust unit having an opening facing into the processing space at a position outside the periphery of the substrate to exhaust gas in the processing space; and an exhaust control unit that increases the discharge amount of the gas discharged by the peripheral exhaust unit as the heating time of the substrate by the heating unit elapses. According to the present invention, it is possible to effectively balance the film thickness uniformity of the coating film of the heat treatment object and the reliability of the recovery of the sublimates generated by the heat treatment.

Description

Technical Field

[0001] The present invention relates to a substrate heat treatment apparatus, a substrate heat treatment method, and a storage medium. Background Art

[0002] Patent Document 1 discloses a heat treatment apparatus including: a placement unit disposed in a processing container for placing a substrate; a heating unit placed on the placement unit for heating the substrate; and a peripheral exhaust port disposed circumferentially outside the substrate on the placement unit for exhausting the inside of the processing container.

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2016-115919. Summary of the Invention

[0006] The present invention provides a substrate heat treatment apparatus capable of effectively taking into account both the film thickness uniformity of a coating film on a heat treatment object and the reliability of recovery of sublimates generated by the heat treatment.

[0007] A substrate heat treatment apparatus according to one aspect of the present invention includes: a heating unit capable of supporting and heating a substrate formed with a coating film; a chamber that separates a processing space on the heating unit from an external space; a peripheral exhaust unit having an opening facing the inside of the processing space at a position outside the periphery of the substrate to exhaust the gas inside the processing space; and an exhaust control unit that increases the discharge amount of the gas discharged from the peripheral exhaust unit as the heating time of the substrate by the heating unit elapses.

[0008] According to the present invention, a substrate heat treatment apparatus can be provided that can effectively take into account both the film thickness uniformity of a coating film on a heat treatment object and the reliability of recovery of sublimates generated by the heat treatment. Brief Description of the Drawings

[0009] Figure 1 is a schematic diagram illustrating a schematic configuration of a substrate processing system.

[0010] Figure 2 is a schematic diagram illustrating a schematic configuration of a heat treatment unit.

[0011] Figure 3 is a block diagram illustrating a hardware configuration of a control unit.

[0012] Figure 4 is a flowchart illustrating a substrate heat treatment process.

[0013] Figure 5It is a schematic diagram showing the state of the heat treatment unit from the reception of the wafer to its setting in the heating unit.

[0014] Figure 6 It is a schematic diagram showing the heat treatment unit that increases the opening area of the outer peripheral exhaust part in the processing space according to the heating time.

[0015] Figure 7 It is a schematic diagram showing a modified example of the heat treatment unit.

[0016] Figure 8 It illustrates Figure 7 the operation of the heat treatment unit.

[0017] Explanation of reference numerals

[0018] 2... Coating and developing apparatus (substrate heat treatment apparatus), 20... Heating unit, 30... Chamber, 31, 60... Peripheral wall, 32... Top plate, 34... Processing space, 35... External space, 40, 70... Outer peripheral exhaust part, 41, 42, 43... Opening part, 50... Opening area changing part, 51... Lifting drive part, 90... Exhaust pipe, 112... Exhaust control part, W... Wafer (substrate). Detailed implementation mode

[0019] Hereinafter, with reference to the drawings, the implementation mode will be described in detail. In the description, the same reference numerals are assigned to the same elements or elements having the same function, and repeated descriptions are omitted.

[0020] (Substrate processing system)

[0021] As Figure 1 shown, the substrate processing system 1 is a system that forms a photosensitive coating film on a substrate, exposes the photosensitive coating film, and develops the photosensitive coating film. The substrate to be processed is, for example, a semiconductor wafer W. The photosensitive coating film is, for example, a resist film. The substrate processing system 1 includes a coating and developing apparatus 2 and an exposure apparatus 3. The exposure apparatus 3 performs an exposure process on the resist film (photosensitive coating film) formed on the wafer W (substrate). Specifically, energy rays are irradiated onto the exposure target part of the resist film by a method such as immersion exposure. The coating and developing apparatus 2 forms a resist film on the surface of the wafer W (substrate) before the exposure process by the exposure apparatus 3, and performs a developing process on the resist film after the exposure process.

[0022] (Coating processing apparatus)

[0023] Hereinafter, as an example of the substrate heat treatment apparatus, the structure of the coating and developing apparatus 2 will be described. The coating and developing apparatus 2 includes a carrier block 4, a processing block 5, an interface block 6, and a control unit 100.

[0024] The carrier block 4 performs the operations of loading the wafer W into the coating and developing apparatus 2 and unloading the wafer W from the coating and developing apparatus 2. For example, the carrier block 4 can carry a plurality of carriers C for the wafer W and is internally provided with a transfer arm A1. The carrier C houses, for example, a plurality of circular wafers W. The transfer arm A1 takes out the wafer W from the carrier C and transfers it to the processing block 5, receives the wafer W from the processing block 5, and returns it to the carrier C.

[0025] The processing block 5 has a plurality of processing modules 11, 12, 13, 14. The processing modules 11, 12, 13 are internally provided with a coating unit U1, a heat treatment unit U2, and a transfer arm A3 for transferring the wafer W to these units.

[0026] The processing module 11 forms a lower layer film on the surface of the wafer W by using the coating unit U1 and the heat treatment unit U2. The coating unit U1 of the processing module 11 coats the film-forming liquid for forming the lower layer film on the wafer W. The heat treatment unit U2 of the processing module 11 performs various heat treatments accompanying the formation of the lower layer film. As a specific example of the lower layer film, a so-called hard mask such as a spin-on carbon (SOC) film can be cited.

[0027] The processing module 12 forms a resist film on the lower layer film by using the coating unit U1 and the heat treatment unit U2. The coating unit U1 of the processing module 12 coats the film-forming liquid for forming the resist film on the lower layer film. The heat treatment unit U2 of the processing module 12 performs various heat treatments accompanying the formation of the resist film.

[0028] The processing module 13 forms an upper layer film on the resist film by using the coating unit U1 and the heat treatment unit U2. The coating unit U1 of the processing module 13 coats the film-forming liquid for forming the upper layer film on the resist film. The heat treatment unit U2 of the processing module 13 performs various heat treatments accompanying the formation of the upper layer film.

[0029] The processing module 14 is internally provided with a developing unit U3, a heat treatment unit U4, and a transfer arm A3 for transferring the wafer W to these units. The processing module 14 performs the development process of the exposed resist film by using the developing unit U3 and the heat treatment unit U4. After the developing liquid is coated on the surface of the exposed wafer W by the developing unit U3, it is rinsed with a rinsing liquid, thereby performing the development process of the resist film. The heat treatment unit U4 performs various heat treatments accompanying the development process. As specific examples of the heat treatment, heat treatment (PEB: Post Exposure Bake) before the development process, heat treatment (PB: Post Bake) after the development process, etc.

[0030] A shelf unit U10 is provided on the side of the carrier block 4 within the processing block 5. The shelf unit U10 is divided into a plurality of compartments arranged side by side in the vertical direction. A lifting arm A7 is provided near the shelf unit U10. The lifting arm A7 raises and lowers the wafer W between the compartments of the shelf unit U10.

[0031] A shelf unit U11 is provided on the side of the interface block 6 within the processing block 5. The shelf unit U11 is divided into a plurality of compartments arranged side by side in the vertical direction.

[0032] The interface block 6 performs the transfer of the wafer W between the exposure apparatuses 3. For example, a transfer arm A8 is built into the interface block 6 and is connected to the exposure apparatuses 3. The transfer arm A8 transfers the wafer W arranged in the shelf unit U11 to the exposure apparatus 3, receives the wafer W from the exposure apparatus 3, and returns it to the shelf unit U11.

[0033] The control unit 100 controls, for example, the coating and developing apparatus 2 to perform a coating and developing process in the following steps. First, the control unit 100 controls the transfer arm A1 to transfer the wafer W in the carrier C to the shelf unit U10, and controls the lifting arm A7 to arrange the wafer W in the compartment for the processing module 11.

[0034] Next, the control unit 100 controls the transfer arm A3 to transfer the wafer W in the shelf unit U10 to the coating unit U1 and the heat treatment unit U2 within the processing module 11, and controls the coating unit U1 and the heat treatment unit U2 to form a lower layer film on the surface of the wafer W. After that, the control unit 100 controls the transfer arm A3 to return the wafer W on which the lower layer film has been formed to the shelf unit U10, and controls the lifting arm A7 to arrange the wafer W in the compartment for the processing module 12.

[0035] Next, the control unit 100 controls the transfer arm A3 to transfer the wafer W in the shelf unit U10 to the coating unit U1 and the heat treatment unit U2 within the processing module 12, and controls the coating unit U1 and the heat treatment unit U2 to form a resist film on the lower layer film of the wafer W. After that, the control unit 100 controls the transfer arm A3 to return the wafer W to the shelf unit U10, and controls the lifting arm A7 to arrange the wafer W in the compartment for the processing module 13.

[0036] Next, the control unit 100 controls the transfer arm A3 to transfer the wafer W in the shelf unit U10 to the coating unit U1 and the heat treatment unit U2 within the processing module 13, and controls the coating unit U1 and the heat treatment unit U2 to form an upper layer film on the resist film of the wafer W. After that, the control unit 100 controls the transfer arm A3 to transfer the wafer W to the shelf unit U11. [[ID=D19]]

[0037] Next, the control unit 100 controls the transfer arm A8 to send out the wafer W of the shelf unit U11 from the exposure apparatus 3. After that, the control unit 100 controls the transfer arm A8 to receive the wafer W that has undergone the exposure process from the exposure apparatus 3 and arrange it in the chamber for the processing module 14 in the shelf unit U11.

[0038] Next, the control unit 100 controls the transfer arm A3 to transfer the wafer W of the shelf unit U11 to the developing unit U3 and the heat treatment unit U4 in the processing module 14, and controls the developing unit U3 and the heat treatment unit U4 to perform a developing process on the resist film of the wafer W. After that, the control unit 100 controls the transfer arm A3 to send back the wafer W to the shelf unit U10, and controls the lift arm A7 and the transfer arm A1 to send back the wafer W into the carrier C. Thus, the coating and developing process is completed.

[0039] In addition, the specific structure of the substrate processing apparatus is not limited to the structure of the coating and developing apparatus 2 exemplified above. The substrate processing apparatus only needs to include the heat treatment unit U2 and the control unit 100 that can control it, and can have any structure.

[0040] (Heat Treatment Unit)

[0041] Next, the structure of the heat treatment unit U2 of the processing module 11 will be specifically described. As Figure 2 shown, the heat treatment unit U2 has a heating unit 20, a chamber 30, a peripheral exhaust unit 40, and an opening area changing unit 50.

[0042] The heating unit 20 supports and heats the wafer W on which a coating film has been formed by applying and drying the processing liquid for forming the lower layer film. For example, the heating unit 20 has a hot plate 21 and a substrate lifting unit 22. The hot plate 21 supports and heats the wafer W arranged horizontally. The hot plate 21 is internally provided with a heater such as a heating wire as a heat source for heating.

[0043] The substrate lifting unit 22 raises and lowers the wafer W on the hot plate 21. For example, the substrate lifting unit 22 has a plurality of lifting pins 23 and a lifting drive unit 24. The plurality of lifting pins 23 support the wafer W by passing through the hot plate 21 from bottom to top. The lifting drive unit 24 uses, for example, a motor or a cylinder as a power source to raise and lower the plurality of lifting pins 23. As a result, the protruding height of the lifting pins 23 on the hot plate 21 changes, and the wafer W supported at the ends of the lifting pins 23 is raised and lowered.

[0044] The chamber 30 separates the processing space 34 above the heating unit 20 (e.g., on the hot plate 21) from the external space 35. For example, the chamber 30 has a peripheral wall 31 and a top plate 32. The peripheral wall 31 surrounds the heating unit 20 (hot plate 21) and the processing space 34. The top plate 32 closes the upper part of the peripheral wall 31.

[0045] The chamber 30 can also be configured to be opened and closed between the peripheral wall 31 and the top plate 32 by the lifting of the peripheral wall 31. For example, the peripheral wall 31 and the top plate 32 are separated between the upper end surface of the peripheral wall 31 and the lower end surface of the top plate 32.

[0046] The chamber 30 also has a top plate support portion 33 that supports the top plate 32 at a specified height (hereinafter referred to as the "opening and closing height") on the heating portion 20. The top plate 32 does not drop below the above-specified height. Therefore, when the peripheral wall 31 is lowered to a position of the top plate 32 that is away from the above-specified height, the space between the peripheral wall 31 and the top plate 32 can be opened. Thus, the wafer W can be fed into the processing space 34 and the wafer W can be sent out from the processing space 34 via the space between the peripheral wall 31 and the top plate 32.

[0047] The top plate support portion 33 is configured to be able to not prevent the top plate 32 from rising above the above-specified height. Therefore, when the peripheral wall 31 in contact with the top plate support portion 33 at the above-specified height is further raised, the peripheral wall 31 and the top plate 32 can be raised together.

[0048] In addition, it does not necessarily have to be a structure that can be opened and closed between the peripheral wall 31 and the top plate 32, and it can also be a structure that fixes the peripheral wall 31 and the top plate 32 to each other. In this case, the peripheral wall 31 and the top plate 32 are raised to open the space between the lower end of the peripheral wall 31 and the upper surface of the hot plate 21, so that the wafer W can be fed into the processing space 34 and the wafer W can be sent out from the processing space 34.

[0049] The outer peripheral exhaust portion 40 opens into the processing space 34 outside the periphery of the wafer W and is used to exhaust the gas in the processing space 34. The outer peripheral exhaust portion 40 can also be configured to be discharged to the exhaust pipe 90 outside the processing space 34 without discharging the gas in the processing space 34 to the external space 35. For example, the outer peripheral exhaust portion 40 has a plurality of rows (for example, 3 rows) of opening portions 41, 42, 43 arranged side by side in the height direction (the thickness direction of the wafer W) on the peripheral wall 31. The opening portions 41, 42, 43 are arranged in order from top to bottom. The opening portions 41, 42, 43 are each connected to the exhaust pipe 90 via a flow path separated from the external space 35 by a pipe or the like.

[0050] As an example, the outer peripheral exhaust portion 40 has an annular buffer space 44 formed in the peripheral wall 31 so as to surround the processing space 34, and the opening portions 41, 42, 43 are all connected to the exhaust pipe 90 via the buffer space 44.

[0051] For example, the opening portion 41 has a plurality of exhaust ports 45 provided on the peripheral wall 31 so as to connect the processing space 34 and the buffer space 44. The plurality of exhaust ports 45 are respectively provided at a plurality of portions surrounding the processing space 34 at the same height and penetrate between the inner peripheral surface of the peripheral wall 31 and the inner surface of the buffer space 44.

[0052] The opening 42 has a plurality of exhaust ports 46 provided on the peripheral wall 31 so as to connect the processing space 34 and the buffer space 44. The plurality of exhaust ports 46 are respectively provided at a plurality of positions surrounding the processing space 34 at the same height, and penetrate between the inner peripheral surface of the peripheral wall 31 and the inner surface of the buffer space 44.

[0053] The opening 43 has a plurality of exhaust ports 47 provided on the peripheral wall 31 so as to connect the processing space 34 and the buffer space 44. The plurality of exhaust ports 47 are respectively provided at a plurality of positions surrounding the processing space 34 at the same height, and penetrate between the inner peripheral surface of the peripheral wall 31 and the inner surface of the buffer space 44.

[0054] In addition, the number of rows of the openings 41, 42, and 43 is not particularly limited. Each of the openings 41, 42, and 43 is configured to be able to independently switch between a state of being connected to the exhaust pipe 90 and a state of not being connected to the exhaust pipe 90.

[0055] The opening area changing unit 50 changes the opening area of the outer peripheral exhaust portion 40 into the processing space 34. For example, the opening area changing unit 50 has a lifting drive unit 51. The lifting drive unit 51 lifts and lowers the peripheral wall 31 to change the number of rows of the openings that open into the processing space 34 among the multi-row openings 41, 42, and 43. For example, the lifting drive unit 51 uses an electric motor as a power source to lift and lower the peripheral wall 31.

[0056] The opening area changing unit 50 may also be configured to be able to change the opening area of the outer peripheral exhaust portion 40 at a specified position (a specified height on the heating unit 20) in the thickness direction of the wafer W. For example, the opening areas of the openings 41, 42, and 43 may be different from each other, and the opening area changing unit 50 changes the opening area of the outer peripheral exhaust portion 40 at the above-mentioned specified position according to which of the openings 41, 42, and 43 is arranged at the above-mentioned specified position.

[0057] As an example, it is also possible that the opening area of each of the openings 41, 42, and 43 becomes larger as it goes down. That is, it is also possible that the opening area of the opening 42 is larger than the opening area of the opening 41, and the opening area of the opening 43 is larger than the opening area of the opening 42. For example, the sum of the opening areas of the plurality of exhaust ports 46 is larger than the sum of the opening areas of the plurality of exhaust ports 45, and the sum of the opening areas of the plurality of exhaust ports 47 is larger than the sum of the opening areas of the plurality of exhaust ports 46.

[0058] More specifically, the number of exhaust ports 46 may be larger than the number of exhaust ports 45, and the number of exhaust ports 47 may be larger than the number of exhaust ports 46. Also, the opening area of each exhaust port 46 may be larger than the opening area of each exhaust port 45, and the opening area of each exhaust port 47 may be larger than the opening area of each exhaust port 46. Moreover, the number of exhaust ports 46 may be larger than the number of exhaust ports 45, the number of exhaust ports 47 may be larger than the number of exhaust ports 46, and the opening area of each exhaust port 46 may be larger than the opening area of each exhaust port 45, and the opening area of each exhaust port 47 may be larger than the opening area of each exhaust port 46.

[0059] The opening area changing unit 50 may also be configured to be able to increase the volume of the processing space 34 as the opening area of the outer peripheral exhaust portion 40 into the processing space 34 increases. For example, the lifting drive unit 51 lifts the peripheral wall 31 to change the number of rows of the openings that open into the processing space 34 among the openings 41, 42, and 43, and lifts the top plate 32 together with the peripheral wall 31.

[0060] More specifically, in a state where the peripheral wall 31 contacts the top plate 32 at the above-described opening / closing height, at least the opening 43 is set at a position lower than the processing space 34. As an example, in a state where the peripheral wall 31 contacts the top plate 32 at the above-described opening / closing height, only the uppermost row of the opening 41 opens into the processing space 34, and the openings 42 and 43 are located at positions lower than the processing space 34.

[0061] When the lifting drive unit 51 further raises the peripheral wall 31 that contacts the top plate 32 at the opening / closing height, the number of rows of the openings that open into the processing space 34 among the openings 41, 42, and 43 increases, and the top plate 32 and the peripheral wall 31 rise together to increase the volume of the processing space 34.

[0062] The coating unit U1 configured as described above is controlled by the control unit 100. The control unit 100 is configured to be able to perform a process of increasing the discharge amount of the gas discharged by the outer peripheral exhaust portion 40 at least as the heating time of the wafer W by the heating unit 20 elapses. For example, the control unit 100 has an opening / closing control unit 111, an exhaust control unit 112, and a substrate lifting control unit 113 as functional structures (hereinafter, referred to as "functional blocks").

[0063] The opening / closing control unit 111 controls the lifting drive unit 51 to open and close the chamber 30 by lifting and lowering the peripheral wall 31. For example, the opening / closing control unit 111 controls the lifting drive unit 51 to lower the peripheral wall 31 in a state where the top plate 32 is at the above-mentioned opening / closing height, thereby opening the space between the peripheral wall 31 and the top plate 32. In addition, the opening / closing control unit 111 controls the lifting drive unit 51 to raise the peripheral wall 31 until it contacts the top plate 32 at the above-mentioned opening / closing height, thereby closing the space between the peripheral wall 31 and the top plate 32.

[0064] The exhaust control unit 112 increases the discharge amount of the gas discharged by the outer peripheral exhaust unit 40 as the heating time of the wafer W by the heating unit 20 elapses. For example, the exhaust control unit 112 increases the opening area of the outer peripheral exhaust unit 40 into the processing space 34 by using the opening area changing unit 50 as the heating time of the wafer W by the heating unit 20 elapses.

[0065] The substrate lifting control unit 113 lifts and lowers the wafer W on the heating unit 20 (on the hot plate 21) by using the substrate lifting unit 22.

[0066] Figure 3 It is a block diagram showing the hardware structure of the control unit 100. The control unit 100 is composed of one or more control computers. As Figure 3 shown, the control unit 100 has a circuit 120. The circuit 120 includes at least one processor 121, a memory 122, a storage 123, and an input / output port 124. The storage 123 has a computer-readable storage medium such as a hard disk, for example. The storage 123 stores a program for causing the heat treatment unit U2 to execute the following steps: a step of discharging the gas in the processing space 34 by the outer peripheral exhaust unit 40 outside the periphery of the wafer W in a state where the wafer W is supported by the heating unit 20 and the processing space 34 is separated from the external space 35 by the chamber 30; and a step of increasing the discharge amount of the gas discharged by the outer peripheral exhaust unit 40 as the heating time of the wafer W by the heating unit 20 elapses. For example, the storage 123 stores a program for causing the control unit 100 to execute the step of increasing the discharge amount of the gas discharged by the outer peripheral exhaust unit 40 as the heating time of the wafer W by the heating unit 20 elapses.

[0067] The memory 122 temporarily stores the program loaded from the storage medium of the storage 123 and the operation results of the processor 121. The processor 121 constitutes the above-mentioned respective functional blocks by cooperatively executing the above program with the memory 122. The input / output port 124 inputs and outputs electrical signals between the lifting drive unit 24 and the lifting drive unit 51 according to instructions from the processor 121.

[0068] In addition, the hardware structure of the control unit 100 is not necessarily limited to each functional block being constituted by a program. For example, at least a part of the above-mentioned functional blocks of the control unit 100 may be constituted by a dedicated logic circuit or an ASIC (Application Specific Integrated Circuit) obtained by integrating them.

[0069] (Heat treatment step)

[0070] Next, as a specific example of the substrate heat treatment method, the substrate heat treatment process executed by the heat treatment unit U2 is illustrated. This process includes: a step of discharging the gas in the processing space 34 to the outside with the outer peripheral exhaust unit 40 outside the periphery of the wafer W in a state where the wafer W is supported by the heating unit 20 and the processing space 34 is separated from the external space 35 by the chamber 30; and a step of increasing the discharge amount of the gas discharged by the outer peripheral exhaust unit 40 as the heating time of the wafer W by the heating unit 20 elapses.

[0071] As Figure 4 shown, the control unit 100 first executes steps S01, S02, S03, S04, and S05. In step S01, with the opening between the peripheral wall 31 and the top plate 32, and the lifting pins 23 protruding on the hot plate 21, the opening / closing control unit 111 stands by until the wafer W is fed into the processing space 34 and placed on the lifting pins 23.

[0072] In step S02, the opening / closing control unit 111 raises the peripheral wall 31 using the lifting drive unit 51 to close the opening between the peripheral wall 31 and the top plate 32. More specifically, the opening / closing control unit 111 raises the peripheral wall 31 using the lifting drive unit 51 until it contacts the top plate 32 at the opening / closing height (refer to Figure 5 (a) and (b) of). In a state where the peripheral wall 31 contacts the top plate 32 at the opening / closing height, only the uppermost row of the opening portions 41 opens into the processing space 34, and the opening portions 42 and 43 are located at a position lower than the processing space 34. Hereinafter, the height at which the opening portion 41 is located in a state where the peripheral wall 31 contacts the top plate 32 at the opening / closing height is referred to as the "exhaust reference height".

[0073] In step S03, the substrate lifting control unit 113 lowers the lifting pins 23 using the lifting drive unit 24 until the ends of the lifting pins 23 are immersed in the hot plate 21. Thereby, the wafer W is set on the hot plate 21 (refer to Figure 5 (c) of). In step S04, the exhaust control unit 112 stands by until a predetermined heating time elapses.

[0074] In step S05, the exhaust control unit 112 confirms whether the height of the peripheral wall 31 has reached the rising end height. The rising end height is the height at which all of the opening portions 41, 42, and 43 are opened into the processing space 34.

[0075] When it is determined in step S05 that the height of the peripheral wall 31 has not reached the rising end height, the control unit 100 executes step S06. In step S06, the exhaust control unit 112 uses the lifting drive unit 51 to raise the peripheral wall 31 so that the number of rows of the opening portions that open into the processing space 34 among the opening portions 41, 42, and 43 increases by one row. For example, the exhaust control unit 112 uses the lifting drive unit 51 to raise the peripheral wall 31 until the opening portion in the row below the opening portion located at the above-mentioned exhaust reference height reaches the exhaust reference height. More specifically, when the opening portion 41 is at the exhaust reference height, the lifting drive unit 51 is used to raise the peripheral wall 31 until the opening portion 42 reaches the exhaust reference height (refer to Figure 6 of (a)). When the opening portion 42 is at the exhaust reference height, the lifting drive unit 51 is used to raise the peripheral wall 31 until the opening portion 43 reaches the exhaust reference height (refer to Figure 6 of (b)). Thereby, the opening area of the outer peripheral exhaust portion 40 at the exhaust reference height is changed.

[0076] After that, the control unit 100 returns the process to step S04. After that, while raising the peripheral wall 31 until the height of the peripheral wall 31 reaches the above-mentioned rising end height, the wafer W is continuously heated. Therefore, as the heating time of the wafer W by the heating unit 20 elapses, the discharge amount of the gas discharged from the outer peripheral exhaust portion 40 increases.

[0077] When it is determined in step S05 that the height of the peripheral wall 31 has reached the rising end height, the control unit 100 executes steps S07 and S08. In step S07, the substrate lifting control unit 113 uses the lifting drive unit 24 to raise the lifting pin 23 until the end of the lifting pin 23 protrudes from the hot plate 21. Thereby, the wafer W rises away from the hot plate 21.

[0078] In step S08, the opening / closing control unit 111 uses the lifting drive unit 51 to lower the peripheral wall 31 to open the space between the peripheral wall 31 and the top plate 32. More specifically, the opening / closing control unit 111 uses the lifting drive unit 51 to lower the peripheral wall 31 until the top plate 32 reaches the opening / closing use height position, and further lowers the peripheral wall 31 to open the space between the peripheral wall 31 and the top plate 32. Thereby, the wafer W can be sent out from the processing space 34. As described above, the substrate heat treatment process performed by the heat treatment unit U2 is completed.

[0079] (Modification example)

[0080] The heat treatment unit U2 only needs to be configured to increase the discharge amount of the gas discharged by the outer peripheral exhaust unit 40 as the heating time of the wafer W by the heating unit 20 elapses, and can be appropriately changed.

[0081] Figure 7 It is a schematic diagram showing a modified example of the heat treatment unit U2. Figure 7 In the heat treatment unit U2, instead of the number of rows of the openings opening into the processing space, the opening area of the outer peripheral exhaust unit into the processing space is changed by changing the distance between the peripheral wall and the heating unit. This heat treatment unit U2 is a unit in which the peripheral wall 31 and the outer peripheral exhaust unit 40 of the above heat treatment unit U2 are replaced with a peripheral wall 60 and an outer peripheral exhaust unit 70.

[0082] The peripheral wall 60 surrounds the processing space 34 on the heating unit 20. For example, the peripheral wall 60 has a main body portion 61, an extension portion 62, and an extension portion 63. The main body portion 61 surrounds the processing space 34 on the heating unit 20 (on the hot plate 21). The extension portion 62 extends downward from the lower end of the main body portion 61 and surrounds the processing space 34 between the heating unit 20 and the main body portion 61. The extension portion 63 extends downward from the lower end of the extension portion 62 and surrounds the heating unit 20 (hot plate 21).

[0083] The inner diameter of the extension portion 62 is larger than the inner diameter of the main body portion 61, and the inner diameter of the extension portion 63 is also larger than the inner diameter of the extension portion 62. Therefore, the lower end surface 61a of the main body portion 61, the lower end surface 62a of the extension portion 62, and the lower end surface 63a of the extension portion 63 are arranged in a stepped manner from the inner peripheral side to the outer peripheral side of the peripheral wall 60, and the lower end surface 61a and the lower end surface 62a face the upper surface of the hot plate 21.

[0084] The outer peripheral exhaust unit 70 is configured to be able to discharge gas from between the peripheral wall 60 and the heating unit 20. For example, the outer peripheral exhaust unit 70 is configured to be able to discharge gas from between the lower end surface 61a and the upper surface of the hot plate 21 and between the lower end surface 62a and the upper surface of the hot plate 21.

[0085] As an example, the outer peripheral exhaust unit 70 has a buffer space 71, a plurality of exhaust ports 72, and a plurality of exhaust ports 73. The buffer space 71 is an annular space formed in the main body portion 61 so as to surround the processing space 34, and is connected to the exhaust pipe 90.

[0086] The plurality of exhaust ports 72 are provided in the main body portion 61 so as to connect the upper surface of the hot plate 21 and the lower end surface 61a to the buffer space 71. In other words, the plurality of exhaust ports 72 penetrate between the inner surface of the buffer space 71 and the lower end surface 61a. The plurality of exhaust ports 72 are respectively provided at a plurality of positions surrounding the processing space 34.

[0087] A plurality of exhaust ports 73 are provided in the main body portion 61 in such a manner as to connect the upper surface of the hot plate 21 and the lower end surface 62a with the buffer space 71. In other words, the plurality of exhaust ports 73 penetrate between the inner surface of the buffer space 71 and the lower end surface 62a. The plurality of exhaust ports 73 are respectively provided at a plurality of positions surrounding the processing space 34.

[0088] With such an outer peripheral exhaust portion 70, the gas in the processing space 34 is discharged to the exhaust pipe 90 via between the lower end surfaces 61a, 62a and the upper surface of the hot plate 21. That is, between the lower end surfaces 61a, 62a and the upper surface of the hot plate 21 constitutes a part of the outer peripheral exhaust portion 70. Therefore, by changing the interval between the lower end surfaces 61a, 62a and the upper surface of the hot plate 21, the opening area of the outer peripheral exhaust portion 70 into the processing space 34 can be changed.

[0089] In Figure 7 the heat treatment unit U2, the opening area changing unit 50 is configured to be able to lift and lower the peripheral wall 60 by using the lifting drive unit 51 to change the interval between the peripheral wall 60 and the heating unit 20. For example, the opening area changing unit 50 uses the lowering drive unit 51 to lift and lower the peripheral wall 60 to change the interval between the lower end surfaces 61a, 62a and the upper surface of the hot plate 21 in a state where the extending portion 63 surrounds the hot plate 21.

[0090] The exhaust control unit 112, as the heating time of the heating unit 20 for the wafer W elapses, uses the lifting drive unit 51 to raise the peripheral wall 60 to increase the interval between the lower end surfaces 61a, 62a and the upper surface of the hot plate 21 (refer to Figure 8 (a) of

[0091] In addition, in this heat treatment unit U2, since the lower end surfaces 61a, 62a face the upper surface of the hot plate 21, the peripheral wall 60 cannot be lowered until the processing space 34 is opened. Therefore, instead of opening between the top plate 32 and the peripheral wall 60, the opening and closing control unit 111 opens between the lower end surface 63a and the upper surface of the hot plate 21 by raising the peripheral wall 60 (refer to Figure 8 (b) of

[0092] (Effects of this Embodiment)

[0093] As described above, the coating and developing apparatus 2 includes: a heating unit 20 capable of supporting and heating a wafer W formed with a coating film; a chamber �0 separating the processing space ݶ on the heating unit 20 from the external space ݵ; an outer peripheral exhaust portion 40 having an opening facing the processing space 34 at a position outside the periphery of the wafer W to discharge the gas in the processing space 34; and an exhaust control unit 112 that increases the discharge amount of the gas discharged from the outer peripheral exhaust portion 40 as the heating time of the heating unit 20 for the wafer W elapses.

[0094] According to the coating and developing apparatus 2, it is possible to suppress the air flow to be small in the initial stage of heating in the heating unit 20. Therefore, in the initial stage of heating, it is possible to suppress the unevenness of the film thickness of the coating film caused by the air flow and to promote the hardening of the coating film obtained by heating. On the other hand, as the hardening of the coating film progresses, the sublimates from the coating film accumulate, so it is necessary to discharge them. In this regard, the discharge amount of the gas discharged from the outer peripheral exhaust unit 40 is increased as the heating time of the wafer W by the heating unit 20 elapses, so that the accumulated sublimates can be sufficiently discharged. At this time, since the film thickness is not easily affected by the air flow due to the progress of the hardening of the coating film in the initial stage of heating, it is possible to suppress the unevenness of the film thickness caused by the increase in the discharge amount. Therefore, the coating and developing apparatus 2 can effectively balance the film thickness uniformity of the coating film and the reliability of the recovery of the sublimates.

[0095] The coating and developing apparatus 2 may further include an opening area changing unit 50 that can change the opening area of the outer peripheral exhaust unit 40 into the processing space 34, and the exhaust control unit 112 uses the opening area changing unit 50 to increase the opening area as the heating time of the wafer W by the heating unit 20 elapses. In this case, the structure for changing the discharge amount of the gas can be simplified.

[0096] The chamber 30 may also have a peripheral wall 31 that surrounds the heating unit 20, and the outer peripheral exhaust unit 40 has a plurality of rows of opening portions 41, 42, 43 that are arranged side by side in the thickness direction of the wafer W on the peripheral wall 31 and are respectively connected to the exhaust pipes. The opening area changing unit 50 has a lifting drive unit 51 that raises and lowers the peripheral wall 31 to change the number of rows of the opening portions 41, 42, 43 that open into the processing space 34. In this case, the structure for changing the discharge amount of the gas can be simplified.

[0097] The opening area changing unit 50 may also be configured to be able to change the opening area at a specified position in the thickness direction of the wafer W. In this case, the sublimates can be discharged more efficiently.

[0098] The chamber 30 may also have a peripheral wall 31 that surrounds the heating unit 20, and the outer peripheral exhaust unit 40 has a plurality of rows of opening portions 41, 42, 43 that are arranged side by side in the height direction on the peripheral wall 31 and are respectively connected to the exhaust pipes. The opening area changing unit 50 has a lifting drive unit 51 that raises and lowers the peripheral wall 31 to change the number of rows of the opening portions 41, 42, 43 that open into the processing space 34. The opening area of each of the plurality of rows of opening portions 41, 42, 43 becomes larger as it goes down. In this case, the sublimates can be discharged more efficiently.

[0099] The opening area changing section 50 may also be configured to increase the volume of the processing space 34 as the opening area increases. According to this coating and developing apparatus 2, at the initial stage of heating in the heating section 20, the natural convection of the gas in the processing space 34 can be suppressed by reducing the volume in the processing space 34. Therefore, at the initial stage of heating, the unevenness of the film thickness of the coating film caused by natural convection can be suppressed while the hardening of the coating film obtained by heating progresses. On the other hand, when the volume in the processing space 34 is maintained in a small state, the concentration of the sublimated substance becomes too high, and it is easy for the sublimated substance to leak from the chamber 30 and the sublimated substance to adhere to the chamber 30 or the like. In contrast, since the opening area changing section 50 is configured to increase the volume of the processing space 34 as the opening area increases, the volume of the processing space 34 also increases as the heating time elapses. Therefore, the excessive increase in the concentration of the sublimated substance can be suppressed. Therefore, it is possible to further effectively balance the film thickness uniformity of the coating film and the reliability of the recovery of the sublimated substance.

[0100] The chamber 30 may also include a peripheral wall 31 surrounding the heating section 20 and a top plate 32 closing the upper part of the peripheral wall 31. The outer peripheral exhaust section 40 has a plurality of rows of opening portions 41, 42, 43 which are arranged side by side in the height direction on the peripheral wall 31 and are respectively used for discharging the gas in the chamber 30. The opening area changing section 50 has a lifting drive section 51 which lifts the peripheral wall 31 and also lifts the top plate 32 together with the peripheral wall 31 to change the number of the opening portions 41, 42, 43 among the plurality of rows of opening portions 41, 42, 43 that open into the processing space 34. In this case, the structure for increasing the volume of the processing space 34 as the opening area increases can be simplified.

[0101] The chamber 30 may also have a peripheral wall 60 surrounding the processing space 34 above the heating section 20. The outer peripheral exhaust section 70 is configured to be able to discharge the gas from between the peripheral wall 60 and the heating section 20. The opening area changing section 50 is configured to be able to change the interval between the peripheral wall 60 and the heating section 20. In this case, the structure for changing the discharge amount of the gas can also be simplified.

[0102] As described above, the embodiments have been described, but the present invention is not necessarily limited to the above-described embodiments, and various modifications can be made without departing from the gist thereof. For example, the structures exemplified above can also be applied to the heat treatment unit U2 of the processing module 12 and the heat treatment unit U2 of the processing module 13. The substrate to be processed is not limited to a semiconductor wafer, and may be, for example, a peeling substrate, a mask substrate, an FPD (Flat Panel Display), or the like.

Claims

1. A substrate heat treatment apparatus, characterized in that, Comprising: A heating unit capable of supporting and heating a substrate formed with a coating film; A chamber that separates a processing space on the heating unit from the external space; An outer peripheral exhaust portion having an opening facing into the processing space at a position outside the peripheral edge of the substrate to exhaust the gas in the processing space; An opening area changing unit capable of changing the opening area of the outer peripheral exhaust portion into the processing space; And An exhaust control unit that, as the heating time of the substrate by the heating unit elapses, uses the opening area changing unit to increase the opening area, thereby increasing the discharge amount of the gas discharged by the outer peripheral exhaust portion, The chamber has a peripheral wall surrounding the heating unit, The outer peripheral exhaust portion has a plurality of rows of opening portions arranged side by side in the thickness direction of the substrate on the peripheral wall and respectively connected to exhaust pipes, The opening area changing unit has a lifting drive unit that lifts the peripheral wall to change the number of rows of the opening portions that open into the processing space among the plurality of rows of opening portions.

2. The substrate heat treatment apparatus according to claim 1, wherein: The opening area changing unit is configured to be able to change the opening area at a specified position in the thickness direction of the substrate.

3. The substrate heat treatment apparatus according to claim 1, wherein: The opening area of each of the plurality of rows of opening portions becomes larger towards the lower row.

4. The substrate heat treatment apparatus according to claim 1, wherein: The opening area changing unit is configured to be able to increase the volume of the processing space as the opening area increases.

5. The substrate heat treatment apparatus according to claim 4, wherein: The chamber further includes a top plate that closes the upper part of the peripheral wall, The lifting drive unit lifts the top plate together with the peripheral wall.

6. A substrate heat treatment apparatus, characterized in that, Comprising: A heating unit capable of supporting and heating a substrate formed with a coating film; A chamber that separates a processing space on the heating unit from the external space; An outer peripheral exhaust portion having an opening facing into the processing space at a position outside the peripheral edge of the substrate to exhaust the gas in the processing space; An opening area changing unit capable of changing the opening area of the outer peripheral exhaust portion into the processing space; And An exhaust control unit that, as the heating time of the substrate by the heating unit elapses, uses the opening area changing unit to increase the opening area, thereby increasing the discharge amount of the gas discharged by the outer peripheral exhaust portion, The chamber has a peripheral wall surrounding the processing space on the heating unit, The outer peripheral exhaust portion is configured to be able to exhaust the gas from between the peripheral wall and the heating unit, The opening area changing unit is configured to be able to change the interval between the peripheral wall and the heating unit.

7. A method for heat-treating a substrate, characterized in that, Comprising: A step of, in a state where a substrate is supported by a heating unit and a processing space on the heating unit is separated from the external space by a chamber, exhausting the gas in the processing space with an outer peripheral exhaust portion at a position outside the peripheral edge of the substrate; And A step of increasing the opening area of the outer peripheral exhaust portion into the processing space and further increasing the discharge amount of the gas discharged from the outer peripheral exhaust portion as the heating time of the substrate by the heating portion elapses. The chamber has a peripheral wall surrounding the heating portion. The outer peripheral exhaust portion has a plurality of rows of opening portions that are arranged side by side in the thickness direction of the substrate on the peripheral wall and are respectively connected to exhaust pipes. Using a lifting drive portion, the peripheral wall is lifted and lowered to change the number of rows of the opening portions that open into the processing space among the plurality of rows of opening portions, thereby changing the opening area of the outer peripheral exhaust portion into the processing space.

8. The substrate heat treatment method according to claim 7, wherein: It includes a step of discharging more gas in the processing space through the outer peripheral exhaust portion in the lower part than in the upper part of the processing space.

9. The substrate heat treatment method according to claim 7 or 8, wherein: It further includes a step of increasing the volume of the processing space as the heating time of the substrate by the heating portion elapses.

10. A computer-readable storage medium, wherein: It stores a program for causing a device to execute the substrate heat treatment method according to claim 7.

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