Solid-state power controller and application structure for onboard 28VDC power distribution control
By adopting GaN power MOS tube parallel array and multi-layer PCB board structure in solid-state power controller, the problem of volume and heat dissipation limitation in large current situations is solved, and the effect of high power density and low temperature rise is achieved. Replaces traditional contactors.
Patent Information
- Application Number
- CN201910599773.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2019-07-04
- Publication Date
- 2024-12-10
- Estimated Expiration
- 2039-07-04
AI Technical Summary
The existing solid-state power controllers are limited by volume and heat dissipation in large current situations, and cannot reach the same level as traditional contactors in terms of power density, resulting in limited applications.
Using a power channel unit composed of a multiple GaN power MOS tube parallel array, combined with digital control loops and communication connectors, the multi-layer structure arrangement of the PCB board can achieve efficient electrical connection and heat dissipation, and replace the traditional in 28VDC power distribution control. Contactor.
A solid-state power controller with a large flow throughput is realized, which increases the power density, is comparable in volume to that of traditional contactors, and is low in power consumption and small temperature rise at high current conditions.
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Figure CN112187239B_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of onboard power distribution, in particular to a solid-state power controller for onboard 28VDC power distribution control and an application structure thereof. Background Art
[0002] The Solid State Power Controller (SSPC) receives control commands from the external bus, sends out the driving signal of the power MOS tube after solving the calculation, and distributes power to the corresponding load channel. In abnormal situations (such as overload or short circuit), the solid state power controller will pull down the driving signal of the power MOS tube, disconnect the load circuit, and protect the aircraft power distribution network. At the same time, the solid state power controller will also collect the status of the load channel, and send information such as voltage, current, channel on and off status, etc. to the external bus through the microprocessor.
[0003] Solid-state power controllers have been widely used in modern aircraft, such as A380, B787 and other typical civil aircraft, due to their characteristics of no contact, no arc and high reliability.
[0004] Although solid-state power controllers have been used for decades, their current applications are still limited to small current specifications. Currently, the maximum rated current of solid-state power controllers on civil aircraft is only 50A. The application of solid-state power controllers in high-power applications is limited by volume, heat dissipation, etc. Compared with traditional switching devices such as contactors, the current high-current SSPC design cannot achieve the same level of power density as electronic contactors (Electronic Load Control Contactor, ELCC).
[0005] See also Figure 1 Due to the influence of large current, the traditional method of connecting the two 28VDC bus bars on the machine still uses a contactor instead of a solid-state power controller. Summary of the invention
[0006] The technical problem solved by the present invention is that the existing solid-state power controller is stuck in the dilemma of small current specifications, and a new solid-state power controller is provided, and the controller is applied to the 28VDC power distribution control on board.
[0007] In order to achieve this purpose, the technical solution of the present invention is as follows: a solid-state power controller for onboard 28VDC power distribution control, comprising:
[0008] A power channel unit formed by a plurality of GaN power MOS tubes in parallel array.
[0009] As a preferred solution for the solid-state power controller for onboard 28VDC power distribution control, the plurality of GaN power MOS tubes are all arranged on the same plane.
[0010] As the preferred solution for the solid-state power controller for 28VDC power distribution control on board, it also includes:
[0011] PCB board body;
[0012] a digital control loop unit; and,
[0013] Communication connector unit;
[0014] The digital control loop unit outputs a corresponding switch driving signal to the power channel unit according to an external control signal from the communication connector unit, so as to control the operation of the power channel unit.
[0015] As a preferred solution for the solid-state power controller for 28VDC power distribution control on board, the PCB board body has a top surface layer, a middle copper layer, a prepreg layer and a bottom aluminum layer arranged in sequence from top to bottom, and the bottom aluminum layer is used as power input;
[0016] The top surface layer is divided into a surface front portion and a surface rear portion;
[0017] The power channel unit, the digital control loop unit and the communication connector unit are arranged on the front part of the surface layer;
[0018] An external copper layer is arranged on the rear of the surface layer, and the external copper layer serves as power output;
[0019] A first via is formed on the PCB body between the outer copper layer and the middle copper layer to achieve electrical connection between the outer copper layer and the middle copper layer;
[0020] The GaN power MOS tube has an input end, an output end and a control end;
[0021] A second via hole is formed on the PCB board body between the input end of the GaN power MOS tube and the bottom aluminum layer to achieve electrical connection between the input end of the GaN power MOS tube and the bottom aluminum layer;
[0022] A third via hole is formed on the PCB board body between the output end of the GaN power MOS tube and the middle copper layer to achieve electrical connection between the output end of the GaN power MOS tube and the middle copper layer;
[0023] A wiring for the control end of the GaN power MOS tube and the digital control loop unit is formed on the surface of the top surface layer to realize electrical connection between the control end of the GaN power MOS tube and the digital control loop unit;
[0024] The control end of the GaN power MOS tube is used to receive the switch drive signal, and selectively electrically connect or disconnect the bottom aluminum layer and the middle copper layer according to the switch drive signal.
[0025] The present invention also provides an application structure of a solid-state power controller for onboard 28VDC power distribution control, comprising:
[0026] Two 28VDC bus bars;
[0027] A solid-state power controller as described above, wherein the bottom aluminum layer in the solid-state power controller is connected to one of the 28VDC bus bars, and the outer copper layer in the solid-state power controller is connected to another 28VDC bus bar.
[0028] Compared with the prior art, the beneficial effects of the present invention are at least: large flow rate and increased power density.
[0029] In addition to the technical problems solved by the present invention, the technical features that constitute the technical solution, and the beneficial effects brought about by the technical features of the technical solution described above, other technical problems that can be solved by the present invention, other technical features included in the technical solution, and the beneficial effects brought about by these technical features will be further described in detail in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS
[0030] Figure 1 The figure is a schematic diagram of a conventional contactor structure for connecting two bus bars in the prior art.
[0031] Figure 2 It is a structural schematic diagram of an embodiment of the present invention.
[0032] Figure 3 FIG. 1 is a stacking view of a PCB body in an embodiment of the present invention (seen from the length direction). FIG.
[0033] Figure 4 FIG. 1 is a stacking view of a PCB body in an embodiment of the present invention (seen from the width direction). FIG.
[0034] Figure 5 This is a GaN drive signal routing diagram (routing on the top surface layer of the PCB body) in one embodiment of the present invention.
[0035] Figure 6 FIG. 1 is a schematic diagram of the chip pins of a GaN power MOS tube in an embodiment of the present invention.
[0036] Figure 7 Schematic diagram of the application structure of a solid-state power controller in one embodiment of the present invention.
[0037] Figure 8 Schematic diagram of the application structure of a solid-state power controller in one embodiment of the present invention. DETAILED DESCRIPTION
[0038] The present invention is further described in detail below by means of specific embodiments connected with the accompanying drawings. It should be noted that the description of these embodiments is used to help understand the present invention, but does not constitute a limitation of the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.
[0039] See also Figures 2 to 4 The figure shows a solid-state power controller for 28VDC power distribution control on board with a current capacity of 350A. The solid-state power controller is mainly composed of a PCB board body 1, a power channel unit 2, a digital control circuit unit 3 and a communication connector unit 4.
[0040] The PCB body 1 is a four-layer structure, having a top surface layer 11, a middle copper layer 12, a prepreg layer 13 and a bottom aluminum layer 14 arranged in sequence from top to bottom. The bottom aluminum layer 14 is used as a power input to receive a large current of power input.
[0041] The top surface layer 11 is divided into a surface front portion 111 and a surface rear portion 112. The surface front portion 111 and the surface rear portion 112 can be divided into half or other proportions.
[0042] The power channel unit 2, the digital control circuit unit 3 and the communication connector unit 4 are arranged on the front surface 111. The power channel unit 2 is located on the left side, and the digital control circuit unit 3 and the communication connector unit 4 are located on the right side. The digital control circuit unit 3 outputs a corresponding switch drive signal to the power channel unit 2 according to an external control signal from the communication connector unit 4 to control the operation of the power channel unit 2.
[0043] An external copper layer 6 is arranged on the surface rear portion 112. The external copper layer 6 is used as a power output for carrying a large current of the power output.
[0044] The power channel unit 2 is formed by a plurality of GaN power MOS tubes 20 connected in parallel. All the GaN power MOS tubes 20 are connected in parallel. The power channel unit 2 has only one channel. The plurality of GaN power MOS tubes 20 are arranged on the same plane.
[0045] A first via hole 51 is formed on the PCB body 1 between the outer copper layer 6 and the middle copper layer 12 to achieve electrical connection between the outer copper layer 6 and the middle copper layer 12 .
[0046] See also Figure 6 The GaN power MOS tube 20 has an input terminal (D pole), an output terminal (S pole) and a control terminal (G pole and SS pin).
[0047] A second via hole 52 is formed on the PCB body 1 between the input end of the GaN power MOS tube 20 and the bottom aluminum layer 14 to achieve electrical connection between the input end of the GaN power MOS tube 20 and the bottom aluminum layer 14 .
[0048] A third via hole 53 is formed on the PCB body 1 between the output end of the GaN power MOS tube 20 and the middle copper layer 12 to achieve electrical connection between the output end of the GaN power MOS tube 20 and the middle copper layer 12 .
[0049] The control terminal of the GaN power MOS tube 20 and the wiring of the digital control circuit unit 3 are formed on the surface of the top surface layer 11 to achieve electrical connection between the control terminal of the GaN power MOS tube 20 and the digital control circuit unit 3. All GaN power MOS tubes 20 (G and SS pins) are connected in parallel to each other and routed on the top surface layer 11. Figure 5 Only two GaN power drive traces are drawn.
[0050] The control end of the GaN power MOS tube 20 is used to receive the switch driving signal, and selectively electrically connect or electrically disconnect the bottom aluminum layer 14 and the middle copper layer 12 according to the switch driving signal.
[0051] In this embodiment, 50 GaN power MOS tubes 20 are selected to form a single power channel. The model of the GaN power MOS tube 20 is GS61008P, 7.6 mm long, 4.6 mm wide, 100V / 90A.
[0052] Due to the adoption of the compact design, the outer dimensions of the PCB body 1 can be controlled within a length of 100 mm and a width of 50 mm.
[0053] Considering that the height of the PCB body 1 can be controlled within 20 mm, the volume of the entire SSPC is equivalent to that of a conventional 80A coupling contactor (ELCC). That is, under this arrangement, the power density of the SSPC is increased by 3.5 times based on the original contactor solution.
[0054] The power consumption of the GaN power MOS tube 20 is calculated as follows: Since the overall flow rate is 350A, the current allocated to each GaN is 7A. The on-resistance Rdson of GS61008P is 7 mΩ, so the steady-state power consumption at 7A current is 0.343W. Due to the optimization of the package and the reduction of thermal resistance, the temperature rise of the GaN power MOS tube 20 is only 0.2°C at this power.
[0055] See also Figure 7 and 8 , the figure shows the application structure of the solid-state power controller for 28VDC power distribution control on board. The solid-state power controller is configured in the primary distribution panel box. The bottom aluminum layer 14 in the solid-state power controller is in surface contact with one of the 28VDC bus bars 7. The outer copper layer 6 in the solid-state power controller is in surface contact with another 28VDC bus bar 8. Through the above structure, power can be transmitted and heat can be dissipated. In principle, the solid-state power controller is essentially a switch, which replaces Figure 1 The contactor in.
[0056] The above only expresses the implementation mode of the present invention, and its description is relatively specific and detailed, but it cannot be understood as limiting the scope of the invention patent. It should be pointed out that for ordinary technicians in this field, several modifications and improvements can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be based on the attached claims.
Claims
1. Solid-state power controller for onboard 28VDC power distribution control, characterized in that: Contains: A power channel unit formed by a plurality of GaN power MOS tubes connected in parallel, wherein the plurality of GaN power MOS tubes are arranged on the same plane; PCB board body; a digital control loop unit; and, Communication connector unit; The digital control loop unit outputs a corresponding switch drive signal to the power channel unit according to an external control signal from the communication connector unit to control the operation of the power channel unit; The PCB board body comprises a top surface layer, a middle copper layer, a prepreg layer and a bottom aluminum layer arranged in sequence from top to bottom, and the bottom aluminum layer is used as a power input; The top surface layer is divided into a surface front portion and a surface rear portion; The power channel unit, the digital control loop unit and the communication connector unit are arranged on the front part of the surface layer; An external copper layer is arranged on the rear of the surface layer, and the external copper layer serves as power output; A first via is formed on the PCB body between the outer copper layer and the middle copper layer to achieve electrical connection between the outer copper layer and the middle copper layer; The GaN power MOS tube has an input end, an output end and a control end; A second via hole is formed on the PCB board body between the input end of the GaN power MOS tube and the bottom aluminum layer to achieve electrical connection between the input end of the GaN power MOS tube and the bottom aluminum layer; A third via hole is formed on the PCB board body between the output end of the GaN power MOS tube and the middle copper layer to achieve electrical connection between the output end of the GaN power MOS tube and the middle copper layer; A wiring for the control end of the GaN power MOS tube and the digital control loop unit is formed on the surface of the top surface layer to realize electrical connection between the control end of the GaN power MOS tube and the digital control loop unit; The control end of the GaN power MOS tube is used to receive the switch drive signal, and selectively electrically connect or disconnect the bottom aluminum layer and the middle copper layer according to the switch drive signal.
2. The application structure of the solid-state power controller for onboard 28VDC power distribution control is characterized in that: Contains: Two 28VDC bus bars; A solid-state power controller as described in claim 1, wherein the bottom aluminum layer in the solid-state power controller is connected to one of the 28VDC bus bars, and the outer copper layer in the solid-state power controller is connected to another 28VDC bus bar.
Citation Information
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