Semiconductor device, thermosetting resin composition used in its manufacture, and dicing-chip bonding integrated tape

Abstract

The semiconductor device of the present disclosure includes: a substrate; a first semiconductor element disposed on the substrate; a first sealing layer that seals the first semiconductor element; and a second semiconductor element that is disposed so as to cover a surface of the first sealing layer opposite to the substrate side and has an area larger than that of the first semiconductor element. The first sealing layer is formed of a cured product of a thermosetting resin composition, and the melt viscosity of the thermosetting resin composition at 120°C is 2500 to 11500 Pa·s.

Description

Technical Field

[0001] The present disclosure relates to a thermosetting resin composition used in semiconductor devices and their manufacturing, and a dicing-chip bonding integrated tape. Background Art

[0002] With the multifunctionalization of devices such as mobile phones, stacked MCPs (Multi Chip Packages) with increased capacity by stacking semiconductor elements in multiple layers are becoming popular. Film adhesives are widely used for mounting semiconductor elements. As an example of a multi-layer stacked package using a film adhesive, a wire-embedded package can be cited. This package is manufactured through the following process: a film adhesive is pressure-bonded to a semiconductor element with wire bonding on a substrate, thereby embedding the semiconductor element and the wire in the film adhesive.

[0003] As one of the important characteristics required for semiconductor devices such as the above-mentioned stacked MCPs, connection reliability can be cited. In order to improve connection reliability, film adhesives that take into account characteristics such as heat resistance, moisture resistance, and reflow resistance have been developed. For example, Patent Document 1 discloses an adhesive sheet having a thickness of 10 to 250 μm containing a thermosetting component and a filler. Patent Document 2 discloses an adhesive composition containing a mixture of an epoxy resin and a phenolic resin and an acrylic copolymer.

[0004] The connection reliability of semiconductor devices depends to a large extent on whether semiconductor elements can be mounted without generating voids on the bonding surface. Therefore, efforts have been made to use a highly fluid film adhesive so that semiconductor elements can be pressure-bonded without generating voids, or to use a film adhesive with a low melt viscosity so that the voids generated during the sealing process of semiconductor elements can disappear. For example, Patent Document 3 discloses an adhesive sheet with low viscosity and low adhesion strength.

[0005] Prior Art Documents

[0006] Patent Documents

[0007] Patent Document 1: International Publication No. 2005 / 103180

[0008] Patent Document 2: Japanese Patent Application Laid-Open No. 2002-220576

[0009] Patent Document 3: Japanese Patent Application Laid-Open No. 2009-120830 Summary of the Invention

[0010] Technical Problem to be Solved by the Invention

[0011] Since the adhesive sheets of Patent Documents 1 and 3 described above embed wires during crimping, they contain a relatively large amount of epoxy resin for the purpose of high fluidity. Thus, under the action of heat generated in the manufacturing process of the semiconductor device, thermal curing easily proceeds. As a result, the adhesive film becomes highly elastic. In other words, even under the high-temperature and high-pressure conditions during sealing, the adhesive sheet is difficult to deform, and the voids formed during crimping sometimes do not disappear finally. On the other hand, since the adhesive composition of Patent Document 2 has a low elastic modulus, although it can make the voids disappear during the sealing process, due to its high viscosity, the embedability of the wires during crimping tends to be insufficient.

[0012] In recent years, the high-speed operation of wire-embedded semiconductor devices has been emphasized. Conventionally, a controller chip for controlling the operation of the semiconductor device has been arranged at the uppermost stage of the stacked semiconductor elements. In order to achieve high-speed operation, a packaging technology for semiconductor devices in which a controller chip is arranged at the lowermost stage has been developed. As one form of such a package, a package in which a relatively thick film-like adhesive is used when crimping the semiconductor element in the second stage of the multi-stage stacked semiconductor elements and a controller chip is embedded inside the film-like adhesive has attracted attention. The film-like adhesive used in this application needs to have high fluidity capable of embedding the controller chip, the wires connecting it to the circuit pattern, and the height difference caused by the unevenness on the substrate surface. By using a highly fluid adhesive sheet such as the adhesive sheets of Patent Documents 1 and 3, this technical problem can be solved.

[0013] However, although the adhesive sheets described in Patent Documents 1 and 3 exhibit high fluidity before curing, the resin that flows during the embedding of the controller chip sometimes contaminates the surrounding circuits. Furthermore, due to the thermal curing after embedding, the adhesive sheet flows, the chip is displaced, or a phenomenon called "sink mark" occurs in which the resin enters the inside of the chip from the end face of the embedded chip like an ebb tide and the resin disappears from the chip end (see Figure 8 ). In particular, in recent years, in order to improve the embedability, thermal curing treatment is often performed under pressure conditions. If heat is applied from the outside in a pressurized state in this way, although the embedability is improved, the resin becomes more fluid, and the above problems often occur.

[0014] An object of the present disclosure is to provide a semiconductor device having excellent connection reliability. Another object of the present disclosure is to provide a thermosetting resin composition useful for manufacturing a semiconductor device having excellent connection reliability and a dicing-chip bonding integrated tape including an adhesive layer formed therefrom.

[0015] Means for Solving the Technical Problem

[0016] In order to develop a package in which a controller chip is embedded in a cured product of a film adhesive, the inventors of the present invention have repeatedly conducted in-depth studies on the selection of the resin of the film adhesive and the adjustment of its physical properties. As a result, the inventors of the present invention have found that the melt viscosity of the film adhesive is related to circuit contamination during embedding and sink marks generated during subsequent thermal processes.

[0017] The semiconductor device of the present disclosure includes: a substrate; a first semiconductor element disposed on the substrate; a first sealing layer configured to cover the region of the substrate on which the first semiconductor element is disposed and seal the first semiconductor element; and a second semiconductor element having an area larger than that of the first semiconductor element and configured to cover the surface of the first sealing layer opposite to the substrate side. The first sealing layer is formed of a cured product of a thermosetting resin composition, and the melt viscosity of the thermosetting resin composition at 120°C is 2500 to 11500 Pa·s.

[0018] The above semiconductor device can achieve high-speed operation by embedding the first semiconductor element (e.g., a controller chip) in a cured product of a thermosetting resin composition. Since the first sealing layer is a cured product of a thermosetting resin composition having a melt viscosity of 2500 to 11500 Pa·s at 120°C, there are sufficiently few voids at the interface with the substrate or the first semiconductor element, and at the same time, the occurrence of substrate contamination and sink mark problems can be sufficiently suppressed, so that excellent connection reliability between the substrate and the first semiconductor element can be achieved.

[0019] The semiconductor device of the present disclosure may further include: a circuit pattern formed on the surface of the substrate; and a first wire electrically connecting the first semiconductor element and the circuit pattern. The semiconductor device of the present disclosure may further include: a second wire electrically connecting the second semiconductor element and the circuit pattern; and a second sealing layer sealing the second semiconductor element and the second wire. The semiconductor device of the present disclosure may further include a third semiconductor element stacked on the second semiconductor element.

[0020] The thermosetting resin composition constituting the above-mentioned film adhesive preferably contains a low molecular weight component (e.g., epoxy resin) having a molecular weight of 10 to 1000 and a high molecular weight component (e.g., acrylic rubber) having a molecular weight of 100,000 to 1,000,000. The content M1 of the low molecular weight component is 23 to 35 parts by mass with respect to 100 parts by mass of the mass of the resin components contained in the thermosetting resin composition, and the content M2 of the high molecular weight component is 25 to 45 parts by mass with respect to 100 parts by mass of the mass of the resin components contained in the thermosetting resin composition. By using the thermosetting resin composition having such a composition, the low molecular weight component contributes to excellent embedability, while the high molecular weight component contributes to suppressing problems caused by excessive flow. The thermosetting resin composition preferably has a total amount (M1 + M2) of the low molecular weight component and the high molecular weight component of 54 to 76 parts by mass with respect to 100 parts by mass of the mass of the resin components contained in the thermosetting resin composition.

[0021] In addition, the molecular weight (weight average molecular weight) of the resin components contained in the thermosetting resin composition is a value obtained by measurement using gel permeation chromatography (GPC) and conversion using a standard curve obtained with standard polystyrene.

[0022] When a substrate having a circuit pattern on its surface is used, the semiconductor device of the present disclosure may further include a first wire that electrically connects the first semiconductor element to the circuit pattern, may further include a second wire that electrically connects the second semiconductor element to the circuit pattern, and a second sealing layer that seals the second semiconductor element and the second wire.

[0023] The thermosetting resin composition of the present disclosure is a thermosetting resin composition used in the manufacturing process of a semiconductor device. The semiconductor manufacturing process includes the following steps: After curing treatment of heating the thermosetting resin composition, a state is formed in which at least a part of the wire and at least one of the semiconductor elements are embedded in the cured thermosetting resin composition. The melt viscosity of the thermosetting resin composition at 120 °C is 2500 to 11500 Pa·s. According to the above thermosetting resin composition, while having fluidity capable of embedding semiconductor elements and the like, problems caused by contamination of the peripheral circuits during embedding and excessive flow of the resin in subsequent heat processes (curing treatment of the thermosetting resin composition) can be sufficiently suppressed.

[0024] The cutting-chip bonding integrated tape of the present disclosure includes an adhesive layer and a bonding layer formed of the above thermosetting resin composition.

[0025] Advantages of the Invention

[0026] According to the present disclosure, a semiconductor device having excellent connection reliability can be provided, and a thermosetting resin composition used in its manufacture and a dicing-chip bonding integrated tape having an adhesive layer formed therefrom can be provided. The thermosetting resin composition has excellent embedability capable of embedding at least one of semiconductor elements such as controller chips and wires, and can sufficiently suppress problems caused by contamination of peripheral circuits during embedding and excessive flow of the resin during subsequent thermal processes. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 FIG. is a cross-sectional view schematically showing an example of a semiconductor device.

[0028] Figure 2 FIG. is a cross-sectional view schematically showing an example of a laminate formed of a film-like adhesive and a second semiconductor element.

[0029] Figure 3 For schematically showing the manufacturing Figure 1 Cross-sectional view of the process of the semiconductor device shown.

[0030] Figure 4 For schematically showing the manufacturing Figure 1 Cross-sectional view of the process of the semiconductor device shown.

[0031] Figure 5 For schematically showing the manufacturing Figure 1 Cross-sectional view of the process of the semiconductor device shown.

[0032] Figure 6 For schematically showing the manufacturing Figure 1 Cross-sectional view of the process of the semiconductor device shown.

[0033] Figure 7 (a) to Figure 7 (e) are cross-sectional views schematically showing the process of manufacturing a laminate formed of a film-like adhesive and a second semiconductor element.

[0034] Figure 8 (a) is a photograph of a cross-section of a structure in which a phenomenon called "sink mark" does not occur, Figure 8 (b) is a photograph of a cross-section of a structure in which "sink mark" has occurred (depth of sink mark: 140 μm).

[0035] Figure 9 (a) is a cross-sectional view schematically showing a structure for evaluating the generation of voids, Figure 9 (b) is a photograph of a structure in which voids are not generated, Figure 9 (c) is a photograph of a structure in which voids are generated. DETAILED DESCRIPTION

[0036] The following is a reference to the attachedFigure 1 The embodiments of the present disclosure will be described in detail below. In the following description, the same or corresponding parts are denoted by the same reference signs, and redundant descriptions are omitted. In addition, the positional relationships such as up, down, left, and right are based on the positional relationships shown in the drawings unless otherwise specified. Furthermore, the dimensional ratios in the drawings are not limited to the ratios shown. In addition, the expression “(meth)acrylic acid” in this specification means “acrylic acid” and its corresponding “methacrylic acid”.

[0037] <Semiconductor device>

[0038] Figure 1 FIG. is a cross-sectional view schematically showing the semiconductor device of this embodiment. The semiconductor device 100 shown in this figure includes a substrate 10, a first semiconductor element Wa disposed on the surface of the substrate 10, a first sealing layer 20 that seals the first semiconductor element Wa, a second semiconductor element Wb disposed above the first semiconductor element Wa, and a second sealing layer 40 that seals the second semiconductor element Wb.

[0039] The substrate 10 has circuit patterns 10a and 10b on its surface. From the viewpoint of suppressing warping of the semiconductor device 100, the thickness of the substrate 10 is, for example, 90 to 180 μm, and may also be 90 to 140 μm. In addition, the substrate 10 may be an organic substrate or a metal substrate such as a lead frame.

[0040] In this embodiment, the first semiconductor element Wa is a controller chip for driving the semiconductor device 100. The first semiconductor element Wa is bonded to the circuit pattern 10a via an adhesive 15 and is also connected to the circuit pattern 10b via a first wire 11. The shape of the first semiconductor element Wa in plan view is, for example, rectangular (square or rectangular). The length of one side of the first semiconductor element Wa is, for example, 5 mm or less, and may also be 2 to 4 mm or 1 to 4 mm. The thickness of the first semiconductor element Wa is, for example, 10 to 150 μm, and may also be 20 to 100 μm.

[0041] The second semiconductor element Wb has an area larger than that of the first semiconductor element Wa. The second semiconductor element Wb is mounted on the substrate 10 via the first sealing layer 20 so as to cover the entire first semiconductor element Wa and a part of the circuit pattern 10b. The shape of the second semiconductor element Wb in plan view is, for example, rectangular (square or rectangular). The length of one side of the second semiconductor element Wb is, for example, 20 mm or less, and may also be 4 to 20 mm or 4 to 12 mm. The thickness of the second semiconductor element Wb is, for example, 10 to 170 μm, and may also be 20 to 120 μm. The second semiconductor element Wb is connected to the circuit pattern 10b via a second wire 12 and is sealed by a sealing layer 25.

[0042] The first sealing layer 20 is formed of a cured product of a film-shaped adhesive 20P (refer to Figure 2 ). In addition, as shown in Figure 2 , the film-shaped adhesive 20P and the second semiconductor element Wb are substantially the same size. Figure 2 The laminate 30 shown is formed of the film-shaped adhesive 20P and the second semiconductor element Wb, and is also called a semiconductor chip with an adhesive. As will be described later, the laminate 30 is manufactured through a dicing process and a pick-up process (refer to Figure 7 ).

[0043] <Manufacturing Method of Semiconductor Device>

[0044] Hereinafter, the manufacturing method of the semiconductor device 100 will be described. First, the structure 50 shown in Figure 3 is manufactured. That is, the first semiconductor element Wa is disposed on the surface of the substrate 10 via the adhesive 15. Thereafter, the first semiconductor element Wa is electrically connected to the circuit pattern 10b by the first wire 11.

[0045] Next, as shown in Figure 3 and Figure 4 , the film-shaped adhesive 20P of the separately prepared laminate 30 is pressed against the substrate 10. Thereby, the first semiconductor element Wa and the first wire 11 are buried in the film-shaped adhesive 20P. The thickness of the film-shaped adhesive 20P may be appropriately set according to the thickness of the first semiconductor element Wa or the like. For example, it may be in the range of 20 to 200 μm, and may be 30 to 200 μm or 40 to 150 μm. By making the thickness of the film-shaped adhesive 20P within the above range, the distance between the first semiconductor element Wa and the second semiconductor element Wb (the distance G in Figure 5 ) can be sufficiently ensured. The distance G is preferably 50 μm or more, for example, and may also be 50 to 75 μm or 50 to 80 μm.

[0046] The pressing of the film-shaped adhesive 20P against the substrate 10 is preferably performed at 80 to 180 °C and 0.01 to 0.50 MPa for 0.5 to 3.0 seconds.

[0047] Next, the film-shaped adhesive 20P is cured by heating. This curing treatment is preferably performed at 60 to 175 °C and 0.01 to 1.0 MPa for 5 minutes or more. Thereby, the first semiconductor element Wa is sealed with the cured product of the film-shaped adhesive 20P (the first sealing layer 20) (refer to Figure 6 ). The curing treatment of the film-shaped adhesive 20P can also be performed in a pressurized atmosphere from the viewpoint of reducing voids. After the second semiconductor element Wb is electrically connected to the circuit pattern 10b by the second wire 12, the second semiconductor element Wb is sealed with the second sealing layer 40, thereby completing the semiconductor device 100 (refer toFigure 1 ).

[0048] <Method for manufacturing semiconductor chip with adhesive>

[0049] One side reference Figure 7 (a)~ Figure 7 (e) One side Figure 2 An example of a method for producing the stacked body 30 (semiconductor chip with adhesive) shown in FIG. 1 is described. First, a dicing-chip bonding integrated tape 8 (hereinafter referred to as "tape 8" depending on the situation) is arranged on a predetermined device (not shown). The tape 8 has a base layer 1, an adhesive layer 2, and an adhesive layer 20A in order. The base layer 1 is, for example, a polyethylene terephthalate film (PET film). The semiconductor wafer W is, for example, a thin semiconductor wafer with a thickness of 10 to 100 μm. The semiconductor wafer W can be single crystal silicon, or it can be polycrystalline silicon, various ceramics, compound semiconductors such as gallium arsenic, etc.

[0050] like Figure 7 (a) and Figure 7 As shown in (b), the tape 8 is attached to one surface of the semiconductor wafer W in such a manner that the adhesive layer 20A contacts. This step is preferably performed at a temperature of 50 to 100° C., more preferably 60 to 80° C. When the temperature is 50° C. or higher, the semiconductor wafer W can obtain good adhesion with the adhesive layer 20A, and when the temperature is 100° C. or lower, the adhesive layer 20A can be prevented from excessively flowing during this step.

[0051] like Figure 7 As shown in (c), the semiconductor wafer W, the adhesive layer 2 and the adhesive layer 20A are cut. Thus, the semiconductor wafer W is made into a single piece, which becomes a semiconductor element Wb. The adhesive layer 20A is also made into a single piece, which becomes a film adhesive 20P. As a cutting method, a method using a rotary knife or a laser can be cited. In addition, the semiconductor wafer W can also be ground before cutting to make it thinner.

[0052] Next, when the adhesive layer 2 is, for example, a UV curing type, Figure 7 As shown in (d), the adhesive layer 2 is cured by irradiating the adhesive layer 2 with ultraviolet rays, thereby reducing the adhesive force between the adhesive layer 2 and the film adhesive 20P. Figure 7 As shown in (e), the semiconductor elements Wa are separated from each other by expanding the base material layer 1 at room temperature or under cooling conditions, and the film adhesive 20P of the stacked body 30 is peeled off from the adhesive layer 2 by pushing upward with a needle-like object 42, and the stacked body 30 is sucked and picked up by a suction chuck 44. The stacked body 30 obtained in this way is supplied to Figure 3 Fabrication of structure 50 is shown.

[0053] <Thermosetting resin composition>

[0054] The thermosetting resin composition constituting the film adhesive 20P will be described. In addition, the film adhesive 20P is a single piece of the adhesive layer 20A, and both are formed of the same thermosetting resin composition. This thermosetting resin composition is, for example, a composition that has passed through a semi-cured (B-stage) state and can become a fully cured product (C-stage) state through subsequent curing treatment.

[0055] The thermosetting resin composition preferably contains the following components.

[0056] (a) Thermosetting resin (hereinafter sometimes simply referred to as "(a) component")

[0057] (b) High molecular weight component (hereinafter sometimes simply referred to as "(b) component")

[0058] (c) Inorganic filler (hereinafter sometimes simply referred to as "(c) component")

[0059] In addition, in the present embodiment, when the (a) thermosetting resin contains an epoxy resin, the epoxy resin (hereinafter sometimes simply referred to as "(a1) component") corresponds to the "low molecular weight component". At this time, the (a) thermosetting resin preferably contains a phenolic resin (hereinafter sometimes simply referred to as "(a2) component") that can be a curing agent for the epoxy resin.

[0060] The thermosetting resin composition may further contain the following components.

[0061] (d) Coupling agent (hereinafter sometimes simply referred to as "(d) component")

[0062] (e) Curing accelerator (hereinafter sometimes simply referred to as "(e) component")

[0063] The above thermosetting resin composition preferably contains both a low molecular weight component ((a1) component) having a molecular weight of 10 to 1000 and a high molecular weight component ((b) component) having a molecular weight of 100,000 to 1,000,000. By using these components in combination, the low molecular weight component contributes to excellent embedability, while the high molecular weight component contributes to suppressing problems caused by excessive flow.

[0064] The content M1 of the low molecular weight component is preferably 23 to 35 parts by mass, more preferably 25 to 35 parts by mass, relative to 100 parts by mass of the resin component contained in the thermosetting resin composition. By the content M1 of the low molecular weight component being 23 parts by mass or more, excellent embedability is easily achieved, and by being 35 parts by mass or less, the effect of easily achieving excellent pick-up property can be exerted. In addition, the softening point of the low molecular weight component is preferably 50°C or lower, and can be, for example, 10 to 30°C.

[0065] The content M2 of the high molecular weight component is preferably 25 to 45 parts by mass, more preferably 30 to 40 parts by mass, relative to 100 parts by mass of the mass of the resin component contained in the thermosetting resin composition. By the content M2 of the high molecular weight component being 25 parts by mass or more, it is easy to suppress problems (such as contamination of the substrate, sink marks, and warpage) caused by excessive flow, and by being 45 parts by mass or less, the effect of easily achieving excellent embedability can be exhibited. In addition, the softening point of the high molecular weight component is preferably more than 50 °C and 100 °C or less.

[0066] The total amount (M1 + M2) of the low molecular weight component and the high molecular weight component is preferably 54 to 76 parts by mass, more preferably 55 to 75 parts by mass, relative to 100 parts by mass of the mass of the resin component contained in the thermosetting resin composition. By the total amount being 54 parts by mass or more, there is a tendency to fully exhibit the effects of using these components in combination, and by being 76 parts by mass or less, the effect of easily achieving excellent pick-up property can be exhibited. In addition, as substances other than the low molecular weight component and the high molecular weight component in the resin component contained in the thermosetting resin composition, mainly thermosetting resins having a molecular weight of 1001 to 99,000 can be cited.

[0067] From the viewpoint of connection reliability, the melt viscosity of the thermosetting resin composition at 120 °C is 2500 to 11500 Pa·s. By the melt viscosity being 2500 Pa·s or more, the occurrence of problems such as contamination of the substrate 10 and sink marks during crimping treatment can be sufficiently suppressed. For example, when there is a region (sink mark) where the cured product of the thermosetting resin composition does not exist between the second semiconductor element Wb and the substrate 10, the sealing material for the second sealing layer 40 intrudes into this region, and thus it is easy to occur a defect that the second semiconductor element Wb is easily peeled off. By the melt viscosity of the thermosetting resin composition at 120 °C being 11500 Pa·s or less, the voids at the interface with the substrate 10 or the first semiconductor element Wa can be sufficiently reduced. The melt viscosity is preferably 5000 to 11000 Pa·s, more preferably 5000 to 10000 Pa·s, and further preferably 5000 to 9000 Pa·s. In addition, the melt viscosity refers to the measured value when a 5% deformation is imparted to the thermosetting resin composition formed into a film shape using ARES (manufactured by TA Instruments) and the temperature is raised at a rate of 5 °C / min while measuring.

[0068] From the viewpoint of connection reliability, the melt viscosity of the thermosetting resin composition at 100°C is preferably 3,500 to 13,500 Pa·s. By having the melt viscosity of 3,500 Pa·s or more, the contamination of the substrate 10 and the occurrence of sink mark problems during the crimping process or the like can be sufficiently suppressed. And by having the melt viscosity of 13,500 Pa·s or less, the voids in the interface with the substrate 10 or the first semiconductor element Wa can be sufficiently reduced. The melt viscosity is preferably 5,500 to 10,500 Pa·s. In order to make the melt viscosity of the thermosetting resin composition at 100°C and 120°C within the above range, the amounts of (a) the thermosetting resin, (b) the high molecular weight component, and (c) the inorganic filler can be appropriately adjusted.

[0069] Figure 9 (a) is a structure including a transparent substrate 10, a first semiconductor element Wa thereon, a first sealing layer 20 (a cured product of the film-like adhesive 20P), and a second semiconductor element Wb thereon. Figure 9 (b) and Figure 9 (c) are photographs taken from the back side of the transparent substrate 10 ( Figure 9 (in the direction of the arrow in (a))). Figure 9 In the structure shown in (b), the embedability of the film-like adhesive is sufficient and no voids are generated. In contrast, in Figure 9 the structure shown in (c), the embedability of the film-like adhesive is insufficient and voids V are generated.

[0070] From the viewpoint of connection reliability, the storage elastic modulus of the cured product (C stage) of the thermosetting resin composition at 180°C is preferably 10 MPa or more, more preferably 25 MPa or more, and may also be 50 MPa or more or 100 MPa or more. In addition, the upper limit value of the storage elastic modulus is, for example, 600 MPa, and may also be 500 MPa. The storage elastic modulus of the cured product of the thermosetting resin composition can be measured using a dynamic viscoelasticity device with a product obtained by curing the film-like adhesive under the temperature condition of 175°C as a specimen.

[0071] <(a) thermosetting resin>

[0072] (a1) component can be used without particular limitation as long as it has an epoxy group in the molecule. As the (a1) component, for example, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolak type epoxy resin, cresol novolak type epoxy resin, bisphenol A novolak type epoxy resin, bisphenol F novolak type epoxy resin, epoxy resin containing dicyclopentadiene skeleton, stilbene type epoxy resin, epoxy resin containing triazine skeleton, epoxy resin containing fluorene skeleton, triphenol phenol methane type epoxy resin, biphenyl type epoxy resin, xylylene type epoxy resin, biphenyl aralkyl type epoxy resin, naphthalene type epoxy resin, polyfunctional phenols, dicyclic aromatic compounds such as anthracene and other diglycidyl ether compounds can be cited. These substances can be used alone or in combination of two or more. Among them, from the viewpoint of heat resistance, the (a1) component can be cresol novolak type epoxy resin, bisphenol F type epoxy resin, or bisphenol A type epoxy resin.

[0073] The epoxy equivalent of the (a1) component can be 90 to 300 g / eq, 110 to 290 g / eq, or 130 to 280 g / eq. When the epoxy equivalent of the (a1) component is in this range, it has a tendency to ensure fluidity while maintaining the bulk strength of the film adhesive.

[0074] The content of the (a1) component can be 5 to 50 parts by mass, 10 to 40 parts by mass, or 20 to 30 parts by mass relative to 100 parts by mass of the total mass of the (a) component, (b) component, and (c) component. When the content of the (a1) component is 5 parts by mass or more, the embeddability of the film adhesive tends to be better. When the content of the (a1) component is 50 parts by mass or less, there is a tendency to further suppress the occurrence of exudation.

[0075] (a2) component can be used without particular limitation as long as it has a phenolic hydroxyl group in the molecule. As the (a2) component, for example, phenolic novolak type phenolic resins obtained by condensing or polycondensing phenols such as phenol, cresol, resorcinol, catechol, bisphenol A, bisphenol F, phenylphenol, aminophenol, etc. and / or naphthols such as α-naphthol, β-naphthol, dihydroxynaphthalene, etc. with aldehyde group-containing compounds such as formaldehyde under an acidic catalyst, phenol aralkyl resins and naphthol aralkyl resins synthesized from allylated bisphenol A, allylated bisphenol F, allylated naphthalene diol, phenol novolak, phenols such as phenol, etc. and / or naphthols and dimethoxy-p-xylene or bis(methoxymethyl)biphenyl can be cited. These substances can be used alone or in combination of two or more. Among them, from the viewpoints of hygroscopicity and heat resistance, the (a2) component can be phenol aralkyl resin, naphthol aralkyl resin, or phenolic novolak type phenolic resin.

[0076] The hydroxyl equivalent of the component (a2) may be 80 to 250 g / eq, 90 to 200 g / eq, or 100 to 180 g / eq. When the hydroxyl equivalent of the component (a2) is in such a range, there is a tendency to maintain the adhesive strength higher while ensuring the fluidity of the film adhesive.

[0077] The softening point of the component (a2) may be 50 to 140 °C, 55 to 120 °C, or 60 to 100 °C.

[0078] The content of the component (a2) may be 5 to 50 parts by mass, 10 to 40 parts by mass, or 20 to 30 parts by mass with respect to 100 parts by mass of the total mass of the components (a), (b), and (c). When the content of the component (a2) is 5 parts by mass or more, there is a tendency to obtain better curability. When the content of the component (a2) is 50 parts by mass or less, there is a tendency for the embedability of the film adhesive to become better.

[0079] The ratio of the epoxy equivalent of the component (a1) to the hydroxyl equivalent of the component (a2) ((epoxy equivalent of the component (a1)) / (hydroxyl equivalent of the component (a2))) may be 0.30 / 0.70 to 0.70 / 0.30, 0.35 / 0.65 to 0.65 / 0.35, 0.40 / 0.60 to 0.60 / 0.40, or 0.45 / 0.55 to 0.55 / 0.45 from the viewpoint of curability. When this equivalent ratio is 0.30 / 0.70 or more, there is a tendency to obtain more sufficient curability. When this equivalent ratio is 0.70 / 0.30 or less, the viscosity can be prevented from becoming too high, and more sufficient fluidity can be obtained.

[0080] <(b) High molecular weight component>

[0081] The component (b) preferably has a glass transition temperature (Tg) of 50 °C or lower.

[0082] Examples of the component (b) include acrylic resins, polyester resins, polyamide resins, polyimide resins, silicone resins, butadiene resins, acrylonitrile resins, and modified products thereof.

[0083] From the viewpoint of fluidity, the component (b) may contain an acrylic resin. Here, the acrylic resin refers to a polymer containing a structural unit derived from (meth)acrylate. The acrylic resin preferably contains, as a structural unit, a structural unit derived from (meth)acrylate having a crosslinkable functional group such as an epoxy group, alcoholic or phenolic hydroxyl group, or carboxyl group. In addition, the acrylic resin may also be an acrylic rubber such as a copolymer of (meth)acrylate and acrylonitrile.

[0084] The glass transition temperature (Tg) of the acrylic resin can be -50 to 50 °C or -30 to 30 °C. When the Tg of the acrylic resin is above -50 °C, there is a tendency to prevent the softness of the adhesive composition from becoming too high. Thus, during wafer dicing, it is easy to cut the film-shaped adhesive and prevent the occurrence of burrs. When the Tg of the acrylic resin is below 50 °C, there is a tendency to suppress the decrease in the softness of the adhesive composition. Thus, when pasting the film-shaped adhesive onto the wafer, there is a tendency to easily and fully bury the voids. In addition, chipping during dicing due to reduced wafer adhesion can also be prevented. Here, the glass transition temperature (Tg) refers to the value measured using a DSC (Differential Scanning Calorimeter) (for example, "Thermo Plus 2" manufactured by Rigaku Corporation).

[0085] The weight average molecular weight (Mw) of the acrylic resin can be 100,000 to 3,000,000 or 500,000 to 2,000,000. When the Mw of the acrylic resin is in this range, film formability, strength under film form, flexibility, adhesiveness, etc. can be appropriately controlled, and the reflow property is excellent, and the embedding property can be improved. Here, Mw refers to the value obtained by measuring using gel permeation chromatography (GPC) and converting using a standard curve obtained from standard polystyrene.

[0086] As commercially available products of the acrylic resin, for example, SG-70L, SG-708-6, WS-023EK30, SG-280EK23, HTR-860P-3CSP, HTR-860P-3CSP-3DB (all manufactured by Nagasechemtex Corporation) can be cited.

[0087] (b) The content of the component can be 5 to 70 parts by mass, 10 to 50 parts by mass, or 15 to 30 parts by mass with respect to 100 parts by mass of the total mass of the (a) component, (b) component, and (c) component. When the content of the (b) component is 5 parts by mass or more, the control of fluidity during molding and processability at high temperatures can be made better. When the content of the (b) component is 70 parts by mass or less, the embedding property can be made better.

[0088] <(c) Inorganic filler>

[0089] As the (c) component, for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride, silicon dioxide, etc. can be cited. These substances can be used alone or in combination of two or more. Among them, from the viewpoint of compatibility with the resin, the (c) component can be silicon dioxide.

[0090] (c) The average particle diameter of the component can be 0.005 to 1 μm or 0.05 to 0.5 μm from the viewpoint of improving adhesiveness. Here, the average particle diameter refers to the value obtained by conversion from the BET specific surface area.

[0091] (c) The content of the component can be 5 to 50 parts by mass, 15 to 45 parts by mass, or 25 to 40 parts by mass with respect to 100 parts by mass of the total mass of the (a) component, (b) component, and (c) component. When the content of the (c) component is 5 parts by mass or more, there is a tendency for the fluidity of the film adhesive to be further improved. When the content of the (c) component is 50 parts by mass or less, there is a tendency for the cuttability of the film adhesive to become better.

[0092] <(d) Coupling agent>

[0093] (d) The component can be a silane coupling agent. Examples of the silane coupling agent include γ-ureidopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, 3-(2-aminoethyl)aminopropyltrimethoxysilane, etc. These substances can be used alone or in combination of two or more.

[0094] (d) The content of the component can be 0.01 to 5 parts by mass with respect to 100 parts by mass of the total mass of the (a) component, (b) component, and (c) component.

[0095] <(e) Curing accelerator>

[0096] (e) The component is not particularly limited, and components commonly used can be used. Examples of the (e) component include imidazoles and their derivatives, organic phosphorus compounds, secondary amines, tertiary amines, quaternary ammonium salts, etc. These substances can be used alone or in combination of two or more. Among them, from the viewpoint of reactivity, the (e) component can be imidazoles and their derivatives.

[0097] Examples of the imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, etc. These substances can be used alone or in combination of two or more.

[0098] (e) The content of the component can be 0.01 to 1 part by mass with respect to 100 parts by mass of the total mass of the (a) component, (b) component, and (c) component.

[0099] [Cut-chip bonding integrated type tape and its manufacturing method]

[0100] For Figure 7(a) The cutting-chip bonding integrated tape 8 and its manufacturing method will be described. The manufacturing method of the tape 8 includes the following steps: a step of coating a varnish of an adhesive composition containing a solvent on a base film (not shown); and a step of heating and drying the coated varnish at 50 to 150 °C to form an adhesive layer 20A.

[0101] The varnish of the adhesive composition can be prepared, for example, by mixing or kneading the components (a) to (c), the component (d) and the component (e) as required in a solvent. The mixing or kneading can be carried out by appropriately combining general mixers, grinders, three-roll mills, ball mills and other dispersers.

[0102] The solvent used for making the varnish is not limited as long as it can uniformly dissolve, knead or disperse the above-mentioned components, and conventionally known solvents can be used. As such solvents, for example, ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, dimethylformamide, dimethylacetamide, N-methylpyrrolidone, toluene, xylene, etc. are exemplified. From the viewpoints of fast drying speed and low price, it is preferable to use methyl ethyl ketone, cyclohexanone, etc.

[0103] The base film is not particularly limited, and examples thereof include polyester films, polypropylene films (such as OPP films), polyethylene terephthalate films, polyimide films, polyetherimide films, polyether naphthalate films, methylpentene films, etc.

[0104] As a method for coating the varnish on the base film, known methods can be used, such as doctor blade coating method, roll coating method, spraying method, gravure coating method, bar coating method, curtain coating method, etc. The conditions for heating and drying are not particularly limited as long as the solvent used is sufficiently volatilized. For example, it can be carried out by heating at 50 to 150 °C for 1 to 30 minutes. The heating and drying can also be carried out by gradually raising the temperature within the range of 50 to 150 °C. By heating and drying, the solvent contained in the varnish is volatilized, and a laminated film of the base film and the adhesive layer 20A can be obtained.

[0105] By pasting the laminated film thus obtained with a cutting tape (a laminate of a base layer 1 and an adhesive layer 2), the tape 8 can be obtained. As the base layer 1, for example, plastic films such as polytetrafluoroethylene films, polyethylene terephthalate films, polyethylene films, polypropylene films, methylpentene films, polyimide films, etc. are exemplified. In addition, the base layer 1 can be subjected to surface treatments such as primer coating, UV treatment, corona discharge treatment, polishing treatment, etching treatment, etc. as required. The adhesive layer 2 can be UV curable or pressure sensitive. The tape 8 can further include a protective film (not shown) covering the adhesive layer 2.

[0106] The above has described the embodiments of the present disclosure in detail, but the present invention is not limited to the above embodiments. For example, in the above embodiments, a package in which two semiconductor elements Wa and Wb are stacked is exemplified, but a third semiconductor element may be stacked above the second semiconductor element Wb, and one or more semiconductor elements may be further stacked above it.

[0107] Example

[0108] Examples are given below to describe the present disclosure more specifically. However, the present invention is not limited to the following examples.

[0109] (Examples 1 to 6 and Comparative Examples 1 and 2)

[0110] Varnishes (a total of six kinds) containing the components shown in Tables 1 and 2 were prepared as follows. That is, cyclohexanone was added to a composition containing an epoxy resin and a phenolic resin as thermosetting resins and an inorganic filler, and stirred. After adding an acrylic rubber as a high molecular weight component thereto and stirring, a coupling agent and a curing accelerator were further added, and stirred until all components became sufficiently uniform, thereby obtaining a varnish.

[0111] The components described in Tables 1 and 2 are as follows.

[0112] (Epoxy resin)

[0113] ·YDF-8170C (trade name): manufactured by Tohto Kasei Co., Ltd., bisphenol F type epoxy resin, epoxy equivalent of 159, liquid at room temperature, softening point of 10 to 30 °C, molecular weight of 100 to 1000 (low molecular weight component)

[0114] ·YDCN-700-10 (trade name): manufactured by Tohto Kasei Co., Ltd., cresol novolak type epoxy resin, epoxy equivalent of 210, softening point of 75 to 85 °C), molecular weight exceeding 1000

[0115] (Phenolic resin)

[0116] ·Milex XLC-LL (trade name): manufactured by Mitsui Chemicals, Inc., phenolic resin, hydroxyl equivalent of 175, softening point of 77 °C, molecular weight exceeding 1000

[0117] (Acrylic rubber)

[0118] ·HTR-860P-3CSP: manufactured by Nagasechemtex Corporation, weight average molecular weight of 800,000 (high molecular weight component)

[0119] (Inorganic filler)

[0120] · SC2050-HLG (Product Name): Manufactured by Admatechs Co., Ltd., silica filler dispersion liquid, average particle size 0.50 μm

[0121] (Curing Accelerator)

[0122] · Curezol 2PZ-CN (Product Name): Manufactured by Shikoku Kasei Kogyo Co., Ltd., 1-cyanoethyl-2-phenylimidazole

[0123] Filter the varnish containing the above components using a 100-mesh filter and perform vacuum degassing. Coat the vacuum-degassed varnish on a polyethylene terephthalate (PET) film (thickness 38 μm) that has been subjected to a release treatment. Heat and dry the coated varnish in two stages: 5 minutes at 90 °C and then 5 minutes at 140 °C. In this way, obtain an adhesive sheet having a film-like adhesive (thickness 60 μm) in the B-stage state on the PET film as the base material film.

[0124] (Measurement of the Melt Viscosity of the Film-Like Adhesive)

[0125] The melt viscosities of the film-like adhesive at 100 °C and 120 °C are measured by the following method. That is, stack 5 sheets of the film-like adhesive with a thickness of 60 μm to reach a thickness of 300 μm, punch it into a size of 10 mm × 10 mm to obtain a specimen for measurement. Install a circular aluminum plate fixture with a diameter of 8 mm in a dynamic viscoelasticity measuring device ARES (manufactured by TA Instruments), and then install the above specimen on it. After that, while applying a 5% deformation at 35 °C, raise the temperature at a rate of 5 °C / minute to 130 °C and perform measurement simultaneously, recording the values of the melt viscosities at 100 °C and 120 °C. The results are shown in Tables 1 and 2.

[0126] (Measurement of the Elastic Modulus of the Cured Product of the Film-Like Adhesive)

[0127] Measure the elastic modulus at 180 °C of the cured product of the film-like adhesive (obtained by curing it under the temperature condition of 175 °C). Use a dynamic viscoelasticity device (product name: Rheogel-E4000, manufactured by UBM Co., Ltd.) during the measurement, apply a tensile load to the specimen, and raise the temperature to 300 °C at a rate of 3 °C / minute with a frequency of 10 Hz, and measure the elastic modulus at 180 °C. The results are shown in Tables 1 and 2.

[0128]

[0129]

[0130] <Evaluation of the Film-Like Adhesive>

[0131] For film adhesives, the following items are evaluated.

[0132] [Embeddability]

[0133] The embeddability of the film adhesive is evaluated by the following method.

[0134] (Fabrication of the laminate formed by the first semiconductor element and the film adhesive)

[0135] A dicing-chip bonding integrated film HR-9004-10 (manufactured by Hitachi Chemical Co., Ltd., thickness of the adhesive layer: 10 μm, thickness of the bonding layer: 110 μm) is pasted on a semiconductor wafer (diameter: 8 inches, thickness: 50 μm). By dicing it, a first laminate formed by the first semiconductor element (controller chip, size: 3.0 mm × 3.0 mm) and the film adhesive is obtained.

[0136] (Fabrication of the laminate formed by the second semiconductor element and the film adhesive)

[0137] Dicing-chip bonding integrated films formed by each film adhesive (thickness: 120 μm) and a dicing adhesive film for the examples and comparative examples are fabricated. They are pasted on a semiconductor wafer (diameter: 8 inches, thickness: 30 μm). By dicing it, a second laminate formed by the second semiconductor element (size: 7.5 mm × 7.5 mm) and the film adhesive is obtained.

[0138] (Bonding of the first and second semiconductor elements)

[0139] A substrate for crimping the first and second semiconductor elements (maximum surface unevenness: 6 μm) is prepared. After the first semiconductor element is crimped on the substrate at 120°C, 0.20 MPa, for 2 seconds through the film adhesive, it is heated at 120°C for 2 hours to semi-cure the film adhesive.

[0140] Next, the second semiconductor element is crimped at 120°C, 0.20 MPa, for 2 seconds through the film adhesive to be evaluated in such a way as to cover the first semiconductor element. At this time, the alignment is performed so that the center positions of the previously crimped first semiconductor element and the second semiconductor element coincide in a top view.

[0141] The obtained structure was put into a pressure oven and heated from 35 °C at a heating rate of 3 °C per minute to 140 °C, and then heated at 140 °C for 30 minutes. The heated structure was analyzed using an ultrasonic imaging device SAT (manufactured by Hitachi Power Solutions Co., Ltd., model FS200II, probe: 25 MHz) to confirm the embeddability. The evaluation was carried out according to the following criteria. The results are shown in Tables 3 and 4.

[0142] A: The area ratio of voids in the specified cross-section is less than 5%.

[0143] B: The area ratio of voids in the specified cross-section is 5% or more.

[0144] [Presence or absence of encapsulant contamination and sink mark occurrence]

[0145] By observing the upper and side surfaces of the structure used for embeddability evaluation with a microscope, the presence or absence of contamination and the occurrence of sink marks were confirmed. For the specimens with sink marks, the depth of the sink marks (starting point: the end of the second semiconductor element) was measured. The results are shown in Tables 3 and 4.

[0146] [Measurement of adhesive strength]

[0147] The shear strength (adhesive strength) of the cured product of the film adhesive was measured by the following method. First, each film adhesive (thickness: 120 μm) of the examples and comparative examples was pasted on a semiconductor wafer (thickness: 400 μm) at 70 °C. By cutting it, a laminate formed by a semiconductor element (size: 5 mm × 5 mm) and the film adhesive was obtained. On the other hand, a substrate coated with solder resist ink (AUS308) on the surface was prepared. The semiconductor element was pressed onto the surface through the film adhesive under the conditions of 120 °C, 0.1 MPa, and 5 seconds. After that, it was heat-treated at 110 °C for 1 hour and further heated at 170 °C for 3 hours to cure the film adhesive, thereby obtaining a specimen for measurement. The specimen was placed at 85 °C and 60% RH for 168 hours. After that, the specimen was placed at 25 °C and 50% RH for 30 minutes, and then the shear strength was measured at 250 °C and used as the adhesive strength. The measurement of the shear strength was carried out using a universal Bondtester series 4000 manufactured by Dage. The results are shown in Tables 3 and 4.

[0148] [Evaluation of reflow resistance]

[0149] The reflow resistance of the film adhesive was evaluated using the following method. First, a structure identical to the structure to be supplied for the embedment evaluation was fabricated. The second semiconductor element of the structure was sealed using a mold sealing material (manufactured by Hitachi Chemical Co., Ltd., trade name: CEL-9750ZHF10) to obtain an evaluation package. In addition, the resin sealing conditions were 175°C / 6.7 MPa / 90 seconds, and the curing conditions were 175°C for 5 hours.

[0150] Twenty-four of the above packages were prepared and exposed to the environment specified by JEDEC (Level 3, 30°C, 60% RH, 192 hours) to allow them to absorb moisture. Subsequently, the moisture-absorbed packages were passed through an IR reflow oven (260°C, maximum temperature 265°C) three times. Evaluation was performed according to the following criteria. The results are shown in Tables 3 and 4.

[0151] A: None of the 24 packages showed breakage of the package, change in thickness, peeling at the interface between the film adhesive and the semiconductor element, etc.

[0152] B: At least one of the 24 packages showed breakage of the package, change in thickness, peeling at the interface between the film adhesive and the semiconductor element, etc.

[0153]

[0154]

[0155] It was confirmed from the results shown in Tables 3 and 4 that the film adhesive sheets of Examples 1 to 5 had excellent embedment properties after treatment using a pressure oven compared to the film adhesive sheets of Comparative Examples 1 to 3, and that the occurrence of package contamination and sink marks could be suppressed.

[0156] Industrial Applicability

[0157] According to the present disclosure, a thermosetting resin composition having fluidity capable of embedding at least one of semiconductor elements such as a controller chip and wires, and capable of sufficiently suppressing contamination of peripheral circuits during embedding and problems caused by excessive flow of resin during subsequent thermal processes, a semiconductor device manufactured using the thermosetting resin composition, and a manufacturing method thereof can be provided.

[0158] Symbol Explanation

[0159] 2 Adhesive layer, 8 Dicing-chip bonding integrated tape, 10 Substrate, 11 First wire, 12 Second wire, 10a, 10b Circuit pattern, 20 First sealing layer (cured product of film adhesive), 20A Adhesive layer, 20P Film adhesive, 40 Second sealing layer, 100 Semiconductor device, Wa First semiconductor element, Wb Second semiconductor element

Claims

1. A semiconductor device, comprising: A substrate; A first semiconductor element disposed on the substrate; A first sealing layer configured to cover the region of the substrate where the first semiconductor element is disposed and seal the first semiconductor element; and A second semiconductor element configured to cover the surface of the first sealing layer on the side opposite to the substrate side and having an area larger than that of the first semiconductor element, The first sealing layer is formed of a cured product of a thermosetting resin composition, and the melt viscosity of the thermosetting resin composition at 120°C is 6000 to 11500 Pa·s, The thermosetting resin composition contains a low molecular weight component having a molecular weight of 10 to 1000 and a high molecular weight component having a molecular weight of 100,000 to 1,000,000, The content M1 of the low molecular weight component is 23 to 35 parts by mass relative to 100 parts by mass of the resin component contained in the thermosetting resin composition, The content M2 of the high molecular weight component is 30 to 45 parts by mass relative to 100 parts by mass of the resin component contained in the thermosetting resin composition, The total amount of the low molecular weight component and the high molecular weight component is 54 to 76 parts by mass relative to 100 parts by mass of the resin component contained in the thermosetting resin composition.

2. The semiconductor device according to claim 1, further comprising: A circuit pattern formed on the surface of the substrate; and A first wire electrically connecting the first semiconductor element and the circuit pattern.

3. The semiconductor device according to claim 2, further comprising: A second wire electrically connecting the second semiconductor element and the circuit pattern; and A second sealing layer sealing the second semiconductor element and the second wire.

4. The semiconductor device according to any one of claims 1 to 3, further comprising a third semiconductor element stacked on the second semiconductor element.

5. A thermosetting resin composition, which is a thermosetting resin composition used in the manufacturing process of a semiconductor device, The manufacturing process includes the following steps: After curing the thermosetting resin composition by heating, a state is formed in which at least a part of a wire and at least one of semiconductor elements are buried in the cured thermosetting resin composition, The melt viscosity of the thermosetting resin composition at 120°C is 6000 to 11500 Pa·s, The thermosetting resin composition contains a low molecular weight component having a molecular weight of 10 to 1000 and a high molecular weight component having a molecular weight of 100,000 to 1,000,000, The content M1 of the low molecular weight component is 23 to 35 parts by mass relative to 100 parts by mass of the resin component contained in the thermosetting resin composition, The content M2 of the high molecular weight component is 30 to 45 parts by mass relative to 100 parts by mass of the resin component contained in the thermosetting resin composition, The total amount of the low molecular weight component and the high molecular weight component is 54 to 76 parts by mass relative to 100 parts by mass of the resin component contained in the thermosetting resin composition.

6. A cutting-chip bonding integrated tape, which includes an adhesive layer and an adhesive layer formed of the thermosetting resin composition according to claim 5.

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