Light emitting device and method for manufacturing the same

Abstract

The present invention discloses a light-emitting device and a method for manufacturing the light-emitting device, wherein the light-emitting device comprises a substrate and at least one light-emitting unit formed on the substrate. The light-emitting unit comprises a receiving hole and a first light-emitting diode. The first light-emitting diode and the receiving hole are separated from each other, and the receiving hole is used to set a second light-emitting diode.

Description

Technical Field

[0001] The present invention relates to a light emitting device and a manufacturing method thereof, and in particular to a light emitting device including a repair line and a manufacturing method thereof. Background Art

[0002] In recent years, with the advancement of science and technology, information products have become indispensable daily necessities. Among them, the key components of information products include display devices, light source devices and / or various light-emitting devices that can generate light. When the component activity of the light-emitting device is high, its manufacturing difficulty is relatively high. Therefore, how to improve the pass rate of the light-emitting device is still an issue that the industry needs to continue to work on. Summary of the invention

[0003] One of the purposes of the present invention is to provide a light emitting device and a manufacturing method thereof. According to the structure and manufacturing method of the light emitting device of the present invention, defective light emitting units can be repaired more effectively to improve the process qualification rate.

[0004] An embodiment of the present invention provides a light emitting device, which includes a substrate and at least one light emitting unit located on the substrate. The light emitting unit includes a receiving hole and a first light emitting diode. The first light emitting diode and the receiving hole are separated from each other, and the receiving hole is used to set a second light emitting diode.

[0005] An embodiment of the present invention further provides a method for manufacturing a light-emitting device, which includes providing a substrate, forming a circuit layer on the substrate, then arranging a first light-emitting diode of a light-emitting unit on the substrate, and making a receiving hole of the light-emitting unit. The receiving hole is used to arrange a second light-emitting diode, and the receiving hole and the first light-emitting diode are separated from each other. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] Figure 1 FIG. 1 is a schematic top view of a first embodiment of a light emitting device of the present invention.

[0007] Figure 2 for Figure 1 The light emitting device is shown as a partial cross-sectional schematic diagram along the section line AA′ and the section line BB′.

[0008] Figures 3 to 6 FIG. 1 is a schematic flow chart of a first embodiment of a method for manufacturing a light emitting device according to the present invention.

[0009] Figure 7 It is a flow chart of a first embodiment of a method for manufacturing a light emitting device according to the present invention.

[0010] Figure 8 It is a partial cross-sectional schematic diagram of a first variation embodiment of the first embodiment of the light emitting device of the present invention.

[0011] Fig. 9 It is a partial cross-sectional schematic diagram of a second variation embodiment of the first embodiment of the light emitting device of the present invention.

[0012] Fig.10 It is a partial cross-sectional schematic diagram of a third variation embodiment of the first embodiment of the light emitting device of the present invention.

[0013] Fig.11 FIG. 1 is a partial cross-sectional schematic diagram of a second embodiment of a light emitting device of the present invention.

[0014] Fig.12 FIG. 4 is a schematic structural diagram of a third embodiment of a light emitting device of the present invention.

[0015] Fig.13 FIG. 4 is a schematic structural diagram of a fourth embodiment of a light emitting device according to the present invention.

[0016] Fig.14 It is a partial cross-sectional top view of a fifth embodiment of the light emitting device and the manufacturing method of the present invention.

[0017] Figure 15 to Figure 16 It is a schematic diagram of the manufacturing process of the sixth embodiment of the light emitting device and the manufacturing method of the present invention.

[0018] Fig.17 FIG. 1 is a schematic top view of a seventh embodiment of a light emitting device of the present invention.

[0019] Fig.18 for Fig.17 The light emitting device is shown in a schematic cross-sectional view along the section line CC'.

[0020] Description of reference numerals: 100-light-emitting device; 102-substrate; 104, 104a, 104b-light-emitting unit; 106-pixel definition layer; 1061-opening; 110-circuit layer; 112-buffer layer; 114-first insulating layer; 116-second insulating layer; 118-third insulating layer; 120-protective layer; 122, 124, 126-equivalent circuit line; 130-chip; 132-conductive glue; 134-nozzle; AH, AH1, A H2-housing hole; AHa-bottom surface; CE1, ce1, ce1'--first electrode; CE2, ce2, ce2'-second electrode; CL1-first wire; CL2-second wire; CM, CML-shared electrode wire; CME-shared electrode; CN-connection wire; CP-connection electrode; CT, CT'-open circuit process; DE-drain; Dx, Dy, Dz-direction; GE-gate; GI-gate insulation layer; LD1-first emitter Photodiode; LD2, LD2'-second light-emitting diode; ML1-first conductive layer; ML2-second conductive layer; ML5-fifth conductive layer; MQL-multiple quantum well layer; PL1-first flat layer; PL2-second flat layer; PL3-third flat layer; PTL-packaging layer; RE-reflective electrode; RL1, RL1'-first repair line; RL2-second repair line; RL21-first part; RL22-second part; RLa, RLb-part; SC-semiconductor layer; SE-source; SE1-first semiconductor layer; SE2-second semiconductor layer; SL-signal wire; SP1, SP2-spacing; SZ1, SZ2-size; TFT-thin film transistor; TH1, TH2, TH3, TH4, th1, th2, th3, th4, th1', th2', th3', th31', th32', th33', th4'-perforation; Wt1, Wt2-width. DETAILED DESCRIPTION

[0021] The present invention is described in detail below in conjunction with specific embodiments and drawings. It should be noted that in order to make it easier for readers to understand and the drawings are concise, the multiple drawings in the present invention only depict a portion of the device, and the specific elements in the drawings are not drawn according to the actual scale. In addition, the number and size of each element in the drawing are only for illustration and are not intended to limit the scope of the present invention.

[0022] Certain words are used throughout the specification and claims of the present invention to refer to specific components. It should be understood by those skilled in the art that electronic equipment manufacturers may refer to the same components by different names. It is not intended to distinguish between components that have the same function but different names. In the following specification and claims, the words "containing" and "including" are open-ended words, and therefore should be interpreted as "containing but not limited to...". When the terms "including", "including" and / or "having" are used in this specification, they specify the presence of the features, regions, steps, operations and / or elements, but do not exclude the presence or addition of one or more other features, regions, steps, operations, elements and / or combinations thereof. When an element or film layer is referred to as "on" or "connected to" another element or film layer, it can be directly on or directly connected to this other element or layer, or there are intervening elements or film layers between the two. Conversely, when an element is referred to as "directly" "on" or "directly connected to" another element or film layer, there are no intervening elements or film layers between the two.

[0023] Although terms such as "first", "second", "third", etc. may be used to describe or name different components, these components are not limited to these terms. These terms are only used to distinguish one component from other components in the specification, and have nothing to do with the order in which these components are manufactured. The same terms may not be used in the claims, and may be replaced by "first", "second", "third", etc. according to the order in which the elements are declared in the claims. Accordingly, in the following description, the first component may be the second component in the claims.

[0024] It should be understood that the features of several different embodiments may be replaced, reorganized, or mixed to complete other embodiments without departing from the spirit of the present invention.

[0025] Please refer to Figure 1 to Figure 2 , Figure 1 is a schematic top view of a first embodiment of a light emitting device of the present invention, Figure 2 for Figure 1The light emitting device shown is a partial cross-sectional schematic diagram along the section line A-A' and the section line BB'. The light emitting device 100 of the first embodiment of the present invention can be a light source device, a display device, a backlight device, a sensing device or a splicing device, but is not limited thereto. The light emitting device can be a bendable or flexible light emitting device. The light emitting device can include, for example, a light emitting diode, and the light emitting diode can include, for example, an inorganic light emitting diode (iLED), an organic light emitting diode (OLED), a sub-millimeter light emitting diode (mini LED, mini-meter-sized LED), a micro LED, micro-meter-sized LED or a quantum dot light emitting diode (quantum dot, QD, which can be, for example, QLED, QDLED), fluorescence, phosphorescence or other suitable materials, and the materials can be arranged and combined in any way, but are not limited thereto. The splicing device can be, for example, a spliced ​​light emitting device, but is not limited thereto. It should be noted that the light emitting device can be any arrangement and combination of the aforementioned, but is not limited thereto. The following will use a display device as a light-emitting device or a splicing device to illustrate the content of the present invention, but the present invention is not limited to this. Furthermore, the light-emitting device 100 can be applied to any electronic product or electronic device that requires a light source or a light-emitting device, such as but not limited to televisions, tablet computers, laptops, mobile phones, cameras, wearable devices, electronic entertainment devices, etc. This embodiment takes the light-emitting device 100 as an example including a display device, and this display device can generate light of different colors to display a color picture, but is not limited to this. The light-emitting device 100 includes a substrate 102 and at least one light-emitting unit 104 located on the substrate 102. Figure 1 The light emitting device 100 shown includes a plurality of light emitting units 104 arranged in an array along the horizontal direction Dx and the vertical direction Dy. Figure 2, the area of ​​the light-emitting unit 104 can be defined by the opening 1061 of the pixel definition layer 106, but not limited thereto. The light-emitting unit 104 includes a first light-emitting diode LD1, which is used to emit light. The first light-emitting diode LD1 can be an inorganic light-emitting diode (LED), an organic light-emitting diode (OLED) or other suitable types of light-emitting diodes or light-emitting elements. For example, the first light-emitting diode LD1 of the present embodiment can use an inorganic light-emitting diode, which can be a sub-micron light-emitting diode (mini LED) or a micro light-emitting diode (micro LED), but not limited thereto. The first light-emitting diode LD1 can, for example, include a first electrode CE1, a second electrode CE2, a first semiconductor layer SE1, a second semiconductor layer SE2, and a multi quantum well (MQW) layer MQL disposed between the first semiconductor layer SE1 and the second semiconductor layer SE2. The first semiconductor layer SE1 , the second semiconductor layer SE2 and the multiple quantum well layer MQL may form a pn diode. The first semiconductor layer SE1 is a p-type semiconductor layer, and the second semiconductor layer SE2 is an n-type semiconductor layer, or vice versa. Figure 1The first light emitting diode LD1 shown is a lateral light emitting diode, and its first electrode CE1 and a second electrode CE2 are both located on the upper surface of the first light emitting diode LD1, but the first light emitting diode LD1 of the present invention is not limited thereto, and may also be other types of light emitting diodes, such as vertical or flip-chip light emitting diodes. According to the present invention, each of the first light emitting diodes LD1 in the plurality of light emitting units 104 may be a light emitting diode of the same type or different types, for example, the first light emitting diodes LD1 in different light emitting units 104 may be light emitting diodes that generate light of the same color, such as (but not limited to) a white light emitting diode, a blue light emitting diode, or an ultraviolet light emitting diode. In some embodiments, the light-emitting unit 104 may further include a light-converting material disposed on the light-emitting diode, such as a quantum dot material. When the first light-emitting diodes LD1 are all blue light-emitting diodes or ultraviolet light-emitting diodes, different light-converting materials may be disposed in different light-emitting units 104, so that the plurality of light-emitting units 104 may emit light of different colors, such as blue light, green light and red light, but not limited thereto. For example, the light-emitting unit 104 may also generate yellow light. In addition, in some embodiments, the first light-emitting diodes LD1 of different light-emitting units 104 may be respectively provided with light-emitting diodes of different colors. For example, three adjacent light-emitting units 104 may respectively include a blue light-emitting diode, a red light-emitting diode and a green light-emitting diode, and these three light-emitting units 104 may respectively serve as a sub-pixel of the display device and together constitute a pixel. In some instances, it may also be designed so that four light-emitting units 104, each including a red light-emitting diode, a green light-emitting diode, a blue light-emitting diode and a white light-emitting diode, are grouped together to form a pixel, but not limited thereto. Any applicable sub-pixel combination may be applied in the present invention. The light-emitting unit 104 of the present embodiment further includes an accommodating hole AH, each accommodating hole AH is respectively located on one side of the first light-emitting diode LD1 in the same light-emitting unit 104, and the first light-emitting diode LD1 and the accommodating hole AH in the same light-emitting unit 104 are adjacent to each other and separated from each other, that is, there is a spacing distance between the first light-emitting diode LD1 and the accommodating hole AH, represented by the spacing SP1.

[0026] According to the present invention, the receiving hole AH can be used to set a second light emitting diode LD2. In other words, the receiving holes AH in some light emitting units 104 of the light emitting device 100 are not provided with the second light emitting diode LD2, while the receiving holes AH in other light emitting units 104 can be provided with the second light emitting diode LD2. Figure 1The two situations are respectively represented by the light emitting unit 104a and the light emitting unit 104b, wherein the partially enlarged cross-sectional schematic diagram of the light emitting unit 104a and the light emitting unit 104b is shown in FIG. Figure 2 In the light emitting unit 104b, a second light emitting diode LD2 is disposed in the receiving hole AH, and the type of the second light emitting diode LD2 may be the same as or different from the first light emitting diode LD1. Figure 2 The second light emitting diode LD2 is a horizontal light emitting diode as an example, and has a first electrode ce1 and a second electrode ce2 disposed on the upper surface of the second light emitting diode LD2, but is not limited thereto. The size of the second light emitting diode LD2 can be larger, smaller or the same as that of the first light emitting diode LD1. In some embodiments, the size of the second light emitting diode LD2 is smaller than or equal to that of the first light emitting diode LD1. Figure 2For example, the size of the second light-emitting diode LD2 is smaller than the first light-emitting diode LD1. For example, the size SZ1 (expressed as the lateral width in the cross-sectional view) of the first light-emitting diode LD1 is larger than the size SZ2 (expressed as the lateral width in the cross-sectional view) of the second light-emitting diode LD2, but the invention is not limited thereto. The ratio of the size (area) of the second light-emitting diode LD2 to the size (area) of the first light-emitting diode LD1 is exemplified as being greater than or equal to 0.1 to less than or equal to 1, but the invention is not limited thereto. Furthermore, the light-emitting device 100 may include a first planar layer PL1, which partially covers the first light-emitting diode LD1 and is partially formed in the opening 1061 of the pixel definition layer 106. The first planar layer PL1 may serve as a protective layer to protect the circuit layer and the first light-emitting diode LD1. The first planar layer PL1 may include an organic insulating material, such as perfluoroalkoxy alkane (PFA), epoxy or other resin materials, but not limited thereto. In other embodiments, the first planar layer PL1 may include an inorganic insulating material, such as silicon oxide (SiOx), silicon nitride (SiNx), aluminum oxide (AlOx) or silicon oxynitride (SiOxNy), but not limited thereto. The accommodation hole AH is located in the first planar layer PL1. For example, the first planar layer PL1 includes an accommodation hole AH in each of the light emitting unit 104a and the light emitting unit 104b. Furthermore, a first wire CL1 and a second wire CL2 may be disposed on the first flat layer PL1, and directly or indirectly electrically connect the first electrode CE1 and the second electrode CE2 of the first light-emitting diode LD1 through the through hole TH1 and the through hole TH2 in the first flat layer PL1, respectively. The first wire CL1 and the second wire CL2 may also be electrically connected to the electrical element located below the first light-emitting diode LD1 through the through hole TH3 and the through hole TH4 in the first flat layer PL1. The first wire CL1 and the second wire CL2 may be formed by the same conductive layer. Furthermore, the second light-emitting diode LD2 is disposed in the receiving hole AH in the light-emitting unit 104b, while no light-emitting diode is disposed in the receiving hole AH in the light-emitting unit 104a. In addition, the light-emitting device 100 may further include a second flat layer PL2 partially covering the first flat layer PL1 and partially filling the receiving hole AH, covering the second light-emitting diode LD2. The second flat layer PL2 may serve as a protective layer to protect the second light-emitting diode LD2. The second planar layer PL2 may include an organic insulating material or an inorganic insulating material, which may be the same as or different from the first planar layer PL1, and the second planar layer PL2 may include a material with a protective function, such as a material with a higher hardness or a function of being waterproof and oxygen-resistant, so the second planar layer PL2 may also be called a protective layer.The light emitting device 100 may further include a first repair line RL1 and a second repair line RL2 formed on the second flat layer PL2, wherein at least a portion RLa of the first repair line RL1 and the second repair line RL2 is located on the surface of the second flat layer PL2 and partially overlaps with the corresponding receiving hole AH in the thickness direction Dz of the substrate 102, that is, the portion RLa at least partially overlaps with the projection area of ​​the receiving hole AH on the surface of the substrate 102; another portion RLb of the first repair line RL1 and the second repair line RL2 may extend into the second flat layer PL2 in the receiving hole AH through the through holes th1 and th2 in the second flat layer PL2. The thickness direction Dz may be the normal direction of the plane of the substrate 102, or the direction of looking down at the substrate 102. In detail, in the light-emitting unit 104a, the first repair line RL1 and the portion RLb of the second repair line RL2 can extend in the second flat layer PL2 along the direction Dz (parallel to the thickness direction of the substrate 102) parallel to the thickness of the substrate 102 in the receiving hole AH, but the first repair line RL1 and the second repair line RL2 do not contact the bottom surface of the receiving hole AH, that is, there is a gap SP2 between the first repair line RL1 and the second repair line RL2 and the bottom surface AHa contacting the receiving hole AH, and the size of the gap SP2 is, for example, greater than or equal to 0.1 micrometers (μm) to less than or equal to 5 micrometers (μm), but not limited thereto, and this design can reduce the probability of generating additional leakage paths. On the other hand, the first repair line RL1 and the second repair line RL2 in the light-emitting unit 104b are electrically connected to the first electrode ce1 and the second electrode ce2 of the second light-emitting diode LD2 through the through hole th1 and the through hole th2, respectively. In addition, the first repair line RL1 can also be electrically connected to the first conductive line CL1 through the through hole th3 in the second flat layer PL2, and the second repair line RL2 can be electrically connected to the electrical element below the receiving hole AH through the through hole th4, wherein the through hole th4 can be formed in the second flat layer PL2, the first flat layer PL1, the pixel definition layer 106 and / or other insulating layers. It should be noted that the sidewalls of the first repair line RL1 and the second repair line RL2 that contact the through hole can be at least partially inclined or gently sloped.

[0027] According to the present invention, the second light-emitting diode LD2 can be used to replace the failed (abnormal light emission or unable to emit light) first light-emitting diode LD1, so that the light-emitting unit 104 can emit light normally and complete the repair operation. Abnormal light emission can be, for example, the color and / or brightness of the light emitted by the light-emitting diode does not meet the requirements, or the light emitted flickers abnormally, etc., all of which are abnormal light emission. For example, in the process of manufacturing the light-emitting device 100, when it is found that the first light-emitting diode LD1 in the light-emitting unit 104b cannot effectively provide the light-emitting function or has abnormal light emission, the second light-emitting diode LD2 can be set in the receiving hole AH of the light-emitting unit 104b, and the second light-emitting diode LD2 and the corresponding switch element are electrically connected by the first repair line ce1 and the second repair line ce2, and the defective first light-emitting diode LD1 in the light-emitting unit 104b is electrically isolated from the switch element below it, so that the second light-emitting diode LD2 can replace the first light-emitting diode LD1 and provide the light-emitting function. In addition, the light-emitting device 100 may further include a protective layer 120 covering the first repair line RL1, the second repair line RL2 and the second planar layer PL2. The protective layer 120 may include inorganic materials such as silicon oxide (SiOx), silicon nitride (SiNx), aluminum oxide (AlOx) or silicon oxynitride (SiOxNy), but is not limited to this. The protective layer 120 may also include organic materials, such as PFA materials.

[0028] The light emitting device 100 may further include a circuit layer 110 formed on the surface of the substrate 102. The circuit layer 110 may include a plurality of wires and various electrical elements, such as switch elements, drive elements, wires (such as gate scanning wires, data signal wires, shared electrode wires, power wires, etc.) and / or capacitors, but is not limited thereto. For example, the light emitting device 100 may be an active display device, and the circuit layer 110 may include a thin film transistor TFT, which includes a gate GE, a source SE, a drain DE and a semiconductor layer SC. The gate insulating layer GI separates the gate GE and the semiconductor layer SC. The thin film transistor TFT may be used as a switch element or a drive element of a light emitting diode. In the light-emitting unit 104a, the drain electrode DE of the thin film transistor TFT can be electrically connected to the first electrode CE1 of the first light-emitting diode LD1 through the first wire CL1, and in the light-emitting unit 104b, the drain electrode DE of the thin film transistor TFT can be electrically connected to the first electrode ce1 of the second light-emitting diode LD2 through the first repair line RL1, and the thin film transistor TFT and the first light-emitting diode LD1 can be electrically isolated through an electrical isolation process (for example, an open circuit process CT). In addition, the source electrode SE of the thin film transistor TFT can be electrically connected to the signal line, and the gate electrode GE can be electrically connected to the scan line, but it is not limited to this. The circuit layer 110 can also include a common electrode wire CM (or a common electrode), which is connected to a common voltage source or an operating voltage source, and each common electrode wire CM can be electrically connected to the corresponding second electrode CE2 of the first light-emitting diode LD1 or the second electrode ce2 of the second light-emitting diode LD2 through a connecting element or a connecting electrode CP. The circuit layer 110 may also selectively include a reflective electrode RE, which is disposed below the first light-emitting diode LD1 and the receiving hole AH. The reflective electrode RE may be in a floating state, electrically connected to a common electrode or grounded, and may be used as a reflector to reflect the light of the light-emitting diode. In some embodiments, the gate DE, the reflective electrode RE, and the common electrode conductor CM may be formed of the same conductive layer. Figure 2 The source electrode SE, the drain electrode DE and the connection electrode CP may be formed by the same conductive layer. Figure 2Represented by the second conductive layer ML2. The first conductive layer ML1 and the second conductive layer ML2 are exemplified as a metal layer, respectively, but not limited thereto. In addition, the circuit layer 110 may further include a buffer layer 112 disposed between the substrate 102 and the semiconductor layer SC, a first insulating layer 114 covering the first conductive layer ML1, a second insulating layer 116 that may be selectively disposed on the first insulating layer 114, and a third insulating layer 118 disposed on the second conductive layer ML2. The first insulating layer 114, the second insulating layer 116, and the third insulating layer 118 may serve as a passivation layer or a protective layer, and may include an inorganic material or an organic material, but not limited thereto. The circuit layer 110 may include a buffer layer 112 for lattice matching or protection between the substrate 102 and each layer of the circuit layer, and the material thereof may be an inorganic insulating material or an organic insulating material, or a combination thereof.

[0029] Please refer to Figures 3 to 7 ,in Figures 3 to 6 1 is a schematic diagram of a process flow of a first embodiment of a method for manufacturing a light emitting device according to the present invention, which shows a cross-sectional schematic diagram of the structure of the light emitting unit 104a and the light emitting unit 104b of the light emitting device, which correspond to Figure 1 The section line A-A' and the section line B-B', Figure 7 FIG. 1 is a flow chart of a first embodiment of a method for manufacturing a light emitting device according to the present invention. Figure 3 and Figure 7As shown, the first embodiment of the method for manufacturing the light emitting device of the present invention includes performing step S100, first providing a substrate 102, the substrate 102 can be a hard substrate or a flexible substrate, the material of the substrate 102 can include, for example, glass, quartz, sapphire, polyimide (PI), polycarbonate (PC) or polyethylene terephthalate (PET), or a combination thereof, but not limited thereto. Then, performing step S102, forming a circuit layer 110 on the substrate 102. The circuit layer 110 can include a plurality of wires and various electrical components as described above, which will not be repeated. The circuit layer 110 is formed by sequentially forming a buffer layer 112, a semiconductor layer SC, a gate insulating layer GI, a first conductive layer ML1, a first insulating layer 114, and an optional second insulating layer 116, then forming a through hole in the first insulating layer 114 and the second insulating layer 116, and then forming a second conductive layer ML2, so that a portion of the second conductive layer ML2 is filled in the through hole, and finally forming a third insulating layer 118. An adhesive layer can be selectively formed on the third insulating layer 118. Then, a pixel definition layer 106 can be selectively formed on the circuit layer 110, wherein the opening 1061 of the pixel definition layer 106 can define the range of the light-emitting unit 104a and the light-emitting unit 104b. Then, step S104 is performed to set the first light-emitting diode LD1 of the light-emitting unit 104 and the light-emitting unit 104b on the substrate 102. When the first light emitting diode LD1 is an inorganic light emitting diode, a plurality of first light emitting diodes LD1 can be simultaneously transferred and arranged in the openings 1061 of each light emitting unit 104 by means of mass transfer. For example, the first light emitting diode LD1 can be fixed on the third insulating layer 118 by means of an adhesive layer on the third insulating layer 118. In some embodiments, the first light emitting diode LD1 can be fixed on the third insulating layer 118 by means of molten metal. In other embodiments, the third insulating layer 118 itself can be adhesive to fix the first light emitting diode LD1.

[0030] Next, step S106 is performed to form a receiving hole AH for the light emitting unit 104 on the substrate 102. The method of forming the receiving hole AH includes first forming a first flat layer PL1 on the substrate 102 to cover the first light emitting diode LD1, and then Figure 4As shown, the first flat layer PL1 is patterned to remove a portion of the first flat layer PL1 to form a receiving hole AH in the first flat layer PL1, which is located on one side of the first light emitting diode LD1 of the light emitting unit 104a and the light emitting unit 104b. The receiving holes AH are respectively adjacent to the first light emitting diode LD1 in the same light emitting unit 104 and are separated from each other, that is, there is a spacing distance SP1 between the receiving hole AH and the corresponding first light emitting diode LD1. In this patterning process, a through hole TH1, a through hole TH2, a through hole TH3 and a through hole TH4 can also be formed in the first flat layer PL1 at the same time, wherein the through hole TH3 and the through hole TH4 can also pass through the third insulating layer 118 to expose the drain DE and the connecting electrode CP of the thin film transistor TFT. Then, please refer to Figure 5 , a conductive layer, such as a third conductive layer ML3, can be selectively formed, a portion of the third conductive layer ML3 is formed on the surface of the first flat layer PL1, and another portion of the third conductive layer ML3 is filled into the through hole TH1, the through hole TH2, the through hole TH3 and the through hole TH4. The formed third conductive layer ML3 constitutes the first conductive wire CL1 and the second conductive wire CL2, and the first conductive wire CL1 is electrically connected to the drain DE, and the second conductive wire CL2 is electrically connected to the common electrode conductive wire CM via the connecting electrode CP. After the first conductive wire CL1 and the second conductive wire CL2 are formed, the preliminary manufacturing of the light emitting device 100 of the present invention is completed. Then, the light emitting device 100 can be subjected to a detection procedure to detect the light emitting effect of each first light emitting diode LD1 or whether the first light emitting diode LD1 has an abnormal condition (such as abnormal light emission). When it is found that the light emitting effect of the first light emitting diode LD1 in one or more light emitting units 104 is not as expected or has an abnormal condition (such as abnormal light emission), the corresponding light emitting unit 104 can be repaired. The repair process includes setting the second light emitting diode LD2 in the receiving hole AH of these light emitting units 104. Figure 5 Take the case where the first light-emitting diode LD1 in the light-emitting unit 104b is detected to be defective as an example. According to the present invention, the repair process includes setting a second light-emitting diode LD2 in the receiving hole AH of the light-emitting unit 104b, and the setting method can be similar to the first light-emitting diode LD1, for example, the second light-emitting diode LD2 that has been manufactured is transferred and bonded to the receiving hole AH of the light-emitting unit 104 that needs to be repaired at the same time or separately, for example, the second light-emitting diode LD2 is fixed by using an adhesive layer. Then, a second flat layer PL2 is formed on the substrate 102, covering the second light-emitting diode LD2 and the first flat layer PL1 and filling the receiving hole AH of each light-emitting unit 104, wherein the second flat layer PL2 also covers the first flat layer PL1. The second flat layer PL2 can be used as a protective layer.

[0031] The method for manufacturing the light emitting device of the present invention may further include the step of forming a repair line, and using the repair line to electrically connect the second light emitting diode LD2 and the circuit layer 110. Figure 6 The step of forming the repair line may include patterning the second flat layer PL2, and forming a through hole th1, a through hole th2, a through hole th3, and a through hole th4 in the light-emitting unit 104a and the light-emitting unit 104b, wherein the through hole th1 and the through hole th2 extend along the direction Dz in the second flat layer PL2 in the receiving hole AH, the through hole th1 and the through hole th2 in the light-emitting unit 104a have approximately the same depth, and have a gap SP2 with the bottom surface of the receiving hole AH, and the through hole th1 and the through hole th2 in the light-emitting unit 104b expose the first electrode ce1 and the second electrode ce2 of the second light-emitting diode LD2 respectively. When patterning the second flat layer PL2, the first electrode ce1 and the second electrode ce2 can be used as an etching stop layer for etching the through hole th1 and the through hole th2. On the other hand, the through hole th3 exposes a portion of the first conductive line CL1, and the through hole th4 can extend to the surface of the third insulating layer 118 to expose the connecting electrode CP. In some embodiments, the maximum width Wt1 of perforation th1 and perforation th2 is greater than the maximum width Wt2 of perforation th3, that is, when performing a lithography and etching process or a patterning process, the top size of perforation th1 and perforation th2 is predetermined to be greater than the top size of perforation th3. Perforation th1 and perforation th2 are designed to have a larger width Wt1 because they are deeper, thereby reducing the aspect ratio and improving the filling effect of the subsequent conductive layer. For example, the maximum width Wt1 of perforation th1 is approximately greater than or equal to 2 microns (μm) to less than or equal to 10 microns (μm), and the maximum width Wt2 of perforation th3 is approximately greater than or equal to 1 micron (μm) to less than or equal to 5 microns (μm), but is not limited thereto. In the present embodiment, the size of perforation th4 may also be similar to perforation th1 and perforation th2, but is not limited thereto. Next, please refer to Figure 2, forming a conductive layer, such as a fourth conductive layer ML4, which is formed on a portion of the surface of the second flat layer PL2 and filled into the through hole th1, the through hole th2, the through hole th3 and the through hole th4 to form a first repair line RL1 and a second repair line RL2, wherein the first repair line RL1 can be directly connected to the first conductive line CL1, and the second repair line RL2 can be directly connected to the connection electrode CP adjacent to the receiving hole AH. In the light-emitting unit 104b, since the second light-emitting diode LD2 is provided, the first repair line RL1 can be directly connected to the first electrode ce1 of the second light-emitting diode LD2, so that the second light-emitting diode LD2 is electrically connected to the first conductive line CL1, and the second repair line RL2 can be directly connected to the second electrode ce2 of the second light-emitting diode LD2, so that the second light-emitting diode LD2 is electrically connected to the connection electrode CP adjacent to the receiving hole AH and the common electrode conductive line CM. It should be noted that the extension lengths of the first repair line RL1 and the second repair line RL2 in the light-emitting unit 104a in the receiving hole AH may be approximately the same, and may be greater than the extension lengths of the first repair line RL1 and the second repair line RL2 in the light-emitting unit 104b in the receiving hole AH. In addition, the method for manufacturing the light-emitting device of the present invention may further include an open process CT to electrically isolate the defective first light-emitting diode LD1 from the circuit layer 110, that is, to electrically isolate at least one of the first electrode CE1 and the second electrode CE2 of the defective first light-emitting diode LD1 from the corresponding thin film transistor TFT or the shared electrode conductor CM. For example, a laser cutting process may be performed to cut off the first conductor CL1 between the first light-emitting diode LD1 and the thin film transistor TFT in the light-emitting unit 104b to form an open circuit. Alternatively, a laser cutting process may also be performed to cut off the second conductor CL2 to form an open circuit between the second electrode CE2 and the shared electrode conductor CM. The open circuit process CT may be performed after the detection process and before forming the second light emitting diode LD2, may be performed after forming the second light emitting diode LD2 and before forming the second planar layer PL2, or may be performed before or after forming the repair line.

[0032] The light emitting device and the manufacturing method of the present invention are not limited to the above-mentioned embodiments. Other embodiments or variations of the present invention will be further disclosed below. In order to simplify the description and highlight the differences between the embodiments or variations, the same reference numerals are used to mark the same elements below, and the repeated parts will not be repeated. In addition, the materials and thicknesses of each film layer and the conditions of the process steps in the subsequent embodiments of the present invention can all refer to the first embodiment, so they will not be repeated.

[0033] Please refer to Figure 8 , Figure 8 FIG. 1 is a partial cross-sectional schematic diagram of a first variation of the first embodiment of the light emitting device of the present invention, wherein Figure 8The light emitting units 104a and 104b correspond to Figure 1 The light emitting unit 104a and the light emitting unit 104b are indicated by the section line AA' and the section line BB', Fig. 9 , Fig.10 and Fig.15 There are similar correspondences, which will not be repeated here. In this variant embodiment, the first repair line RL1 and the second repair line RL2 can be composed of the third conductive layer ML3, that is, composed of the same conductive layer as the first wire CL1 and the second wire CL2. The first repair line RL1 and the second repair line RL2 can extend from the surface of the first flat layer PL1 along the side wall of the receiving hole AH to the bottom surface AHa of the receiving hole AH. Furthermore, the second light-emitting diode LD2 of this variant embodiment is a flip-chip light-emitting diode, and its first electrode ce1 and second electrode ce2 are both located on the lower surface of the second light-emitting diode LD2. When the second light-emitting diode LD2 is disposed in the receiving hole AH, the first electrode ce1 and the second electrode ce2 of the second light-emitting diode LD2 can directly contact the first repair line RL1 and the second repair line RL2 thereunder and be electrically connected to each other. Figure 8 The second flat layer PL2 shown covers the first repair line RL1 and the second repair line RL2, and this variation embodiment may not have Figure 2 The protective layer 120 is shown. This variation embodiment can perform an open circuit process CT on the first light emitting element LD1 with defects or damage, for example, by cutting off the first conductive line CL1 in the light emitting unit 104b with a laser process, so that the first light emitting element LD1 is electrically isolated from the thin film transistor TFT. Other embodiments of the present invention can perform similar open circuit processes CT or electrical insulation processes on the damaged ones, which will not be described in detail.

[0034] Please refer to Fig. 9 , Fig. 91 is a partial cross-sectional schematic diagram of a second variation of the first embodiment of the light emitting device of the present invention. In this variation, the second light emitting diode LD2 is a vertical type light emitting diode, and its first electrode ce1 and second electrode ce2 are respectively located at the lower side and the upper side of the second light emitting diode LD2. The first repair line RL1 can be formed by the third conductive layer ML3, extending from the upper surface of the first flat layer PL1 along the side wall of the receiving hole AH to the bottom surface AHa of the receiving hole AH. The second repair line RL2 can include a first portion RL21 and a second portion RL22, wherein the second portion RL22 can be formed by the third conductive layer ML3, and is electrically connected to the common electrode conductor CM by penetrating the first flat layer PL1, the pixel definition layer 106 and the third insulating layer 118 through the through hole th4; the first portion RL21 of the second repair line RL2 can be formed by another conductive layer, for example, the fourth conductive layer ML4, which is located above the second flat layer PL2 and covers and contacts the second electrode ce2 of the second light emitting diode LD2, and the first portion RL21 can also be connected to the second portion RL22 through the through hole th4'. As can be seen from the above, the second repair line RL2 and the first repair line RL1 can be formed by different conductive layers, for example, the first repair line RL1 is formed by one conductive layer, and the second repair line RL2 is formed by two conductive layers, but not limited thereto. In this variation, the second planar layer PL2 and the fourth conductive layer ML4 can be provided with a protective layer 120.

[0035] Please refer to Fig.10 , Fig.10 FIG. 1 is a partial cross-sectional schematic diagram of a third variant embodiment of the first embodiment of the light emitting device of the present invention. Figure 8 Compared with the first variation embodiment shown, the first light emitting diode LD1 and the second light emitting diode LD2 of this variation embodiment are both flip-chip light emitting diodes, and the first electrode CE1 and the second electrode CE2 of the first light emitting diode LD1 are both facing the substrate 102 and contacting and electrically connected to the first wire CL1 and the second wire CL2 thereunder. Similarly, the first electrode ce1 and the second electrode ce2 of the second light emitting diode LD2 are facing the substrate 102 and contacting and electrically connected to the first repair line RL1 and the second repair line RL2 thereunder. In this variation embodiment, the first wire CL1, the second wire CL2, the first repair line RL1 and the second repair line RL2 may be formed by the same conductive layer, such as the third conductive layer ML3, wherein the third conductive layer ML3 may be located between the pixel definition layer 106 and the circuit layer 110, or between the first planar layer PL1 and the circuit layer 110, but is not limited thereto.

[0036] Please refer to Fig.11 , Fig.11FIG. 1 is a partial cross-sectional diagram of a second embodiment of the light emitting device of the present invention. In this embodiment, the light emitting device 100 may be a passive light emitting device, and each light emitting unit 104 may not have a corresponding driving element or switching element (such as a thin film transistor) in the circuit layer 110. For example, the circuit layer 110 may include a shared electrode wire CM and a signal wire SL, and a chip 130 may be disposed on the surface of the substrate 102. The shared electrode wire CM and the signal wire SL may be electrically connected to the chip 130, respectively. Fig.11 The equivalent circuit line 122 and the equivalent circuit line 124 represent the electrical connection relationship between the common electrode wire CM, the signal wire SL and the chip 130. When the light emitting device 100 is in operation, the chip 130 can provide a signal (such as a switch signal) required for the operation of the first light emitting diode LD1, and transmit the signal through the signal wire SL to turn on the first light emitting diode LD1.

[0037] Please refer to Fig.12 , Fig.12 is a top view of a third embodiment of a light emitting device of the present invention, and Fig.12 An enlarged schematic cross-sectional view of one of the light-emitting units is shown below. In the present embodiment, when the first light-emitting diode LD1 in a light-emitting unit 104 emits light abnormally or is defective, two second light-emitting diodes LD2 and LD2' may be provided in the same accommodation hole AH. The first repair line RL electrically connects the first electrode ce1 of the second light-emitting diode LD2 and the drain DE of the thin-film transistor TFT via the through hole th1 and the through hole th3, the first repair line RL' electrically connects the first electrode ce1' of the second light-emitting diode LD2' via the through hole th1', and electrically connects the first electrode ce1' to the connecting wire CN via the through hole th31', the through hole th32' and the through hole th33', wherein the connecting wire CN is electrically connected to the drain DE of the thin-film transistor TFT, Fig.12The electrical connection relationship between the two is represented by an equivalent circuit line 126. The connection wire CN may include a semiconductor layer SC, but is not limited thereto. In some embodiments, the connection wire CN may be formed by a first conductive layer ML1. Furthermore, the second light emitting diode LD2 and the second light emitting diode LD2' may share a second wire RL2 and be electrically connected to a common electrode wire CM, wherein the second wire RL2 electrically connects the second electrode ce2 of the second light emitting diode LD2 to the common electrode wire CM via a perforation th2 and a perforation th4, and electrically connects the second electrode ce2' of the second light emitting diode LD2' to the common electrode wire CM via a perforation th2' and a perforation th4, wherein the perforation th4 may penetrate the second flat layer PL2. In this embodiment, one receiving hole AH may be provided with two second light emitting diodes LD2 and LD2', and the sizes of the second light emitting diodes LD2 and LD2' may be the same or different from the first light emitting diode LD1. The two second light emitting diodes LD2 and LD2' may provide the same or different repair functions, and may also reduce the probability that both second light emitting diodes LD2 and LD2' have defects and cannot be successfully repaired. The size of the receiving hole AH in this embodiment is larger than that of the receiving hole AH in the previous embodiment, and Fig.12 The depicted receiving hole AH may be formed by the pixel definition layer 106 and the first planar layer PL1, that is, the sidewall of the receiving hole AH includes a portion of the pixel definition layer 106 and a portion of the first planar layer PL1, but the invention is not limited thereto. In some embodiments, the receiving hole AH may still be formed by the first planar layer PL1, that is, the receiving hole AH will not expose the pixel definition layer 106, and the first planar layer PL1 will cover the sidewall of the opening 1061 of the pixel definition layer 106. Similar to the aforementioned embodiment, the present implementation may perform an open circuit process CT to cut off the electrical connection between the first light emitting diode LD1 and the thin film transistor TFT. In some embodiments, when one second light emitting diode LD2 or LD2' can achieve the repair purpose, one of the second light emitting diodes LD2 and LD2' may also be electrically insulated from the thin film transistor TFT, but the invention is not limited thereto.

[0038] Please refer to Fig.13 , Fig.13 is a schematic top view of a fourth embodiment of a light emitting device of the present invention, and Fig.13 A cross-sectional enlarged schematic diagram of one of the light-emitting units is shown below. The difference between this embodiment and the third embodiment is that Fig.13The light emitting unit 104 includes two receiving holes AH1 and AH2. When the first light emitting diode LD1 of the light emitting unit 104 is defective, a second light emitting diode LD2 and a second light emitting diode LD2' can be respectively arranged in the receiving holes AH1 and AH2. The second light emitting diode LD2 and the second light emitting diode LD2' can share a second repair line RL2, wherein the second repair line RL2 can be electrically connected to the shared electrode conductor CM through the through hole th4. Fig.13 The through hole th4 in the first planar layer PL1 can penetrate the first planar layer PL1. The electrical connection between the second light emitting diode LD2 and the second light emitting diode LD2' and other components is similar to the third embodiment, and will not be described in detail.

[0039] Please refer to Fig.14 , Fig.14 1 is a partial cross-sectional top view of the fifth embodiment of the light emitting device and the manufacturing method of the present invention. In the light emitting unit 104 of the light emitting device 100 of the present embodiment, the receiving hole AH may have a larger size, and the receiving hole AH may be formed by a portion of the pixel definition layer 106, a portion of the first flat layer PL1, and a portion of the second flat layer PL2. In the manufacturing process of the light emitting device 100, if it is detected that the first light emitting diode LD1 of the light emitting unit 104b is defective, a second light emitting diode LD2 may be arranged in the receiving hole AH, and an open circuit process CT may be performed on the first light emitting diode LD1. Then, the detection step may be performed again to test the light emitting effect of the second light emitting diode LD2. If the second light emitting diode LD2 has an abnormal condition, another second light emitting diode LD2' (or may be called a third light emitting diode) may be arranged in the receiving hole AH, and an open circuit process CT' may be performed again to electrically insulate the second light emitting diode LD2 from the thin film transistor TFT or the common electrode conductor CM. After the second light emitting diode LD2' is manufactured, a third flat layer PL3 may be formed on the substrate 102 to cover the second light emitting diode LD2', and then a conductive layer, such as a fifth conductive layer ML5, may be formed on the third flat layer PL3, so that part of the fifth conductive layer ML5 is filled in the through hole th1' and the through hole th3' to form a first repair line RL1', and part of the fifth conductive layer ML5 is filled in the through hole th2' and the through hole th4' to form a second repair line RL2'. The light emitting device 100 may also selectively include a protective layer disposed on the fifth conductive layer ML5 and the third flat layer PL3 to provide a light emitting diode protection function.

[0040] Please refer to Figure 15 to Figure 16 , Figure 15 to Figure 16 This is a schematic diagram of the sixth embodiment of the light emitting device and the manufacturing method of the present invention. Fig.15Compared with the first embodiment, the light emitting device 100 of the present embodiment replaces the second flat layer PL2 with a packaging layer PTL, wherein the packaging layer PTL can be formed at the receiving hole AH by dispensing, so the packaging layer PTL may not cover the first light emitting diode LD1. The manufacturing method of the light emitting device 100 of the present embodiment is to perform a detection process after manufacturing the first light emitting diode PD1, the first wire CL1 and the second wire CL2, for example, to find out that the first light emitting diode LD1 of the light emitting unit 104b has an abnormality, while the first light emitting diode LD1 of the light emitting unit 104a has no abnormality. Then, the second light emitting diode LD2 is set in the receiving hole AH of the light emitting unit 104b, and then the packaging layer PTL is formed. The manufacturing method of the present embodiment is to perform a repair process on the abnormal light-emitting unit 104b to form a repair line. For example, a through hole th1, a through hole th2, a through hole th3 and a through hole th4 are formed in the packaging layer PTL of the light-emitting unit 104b by laser or etching. Then, a conductive paste 132 can be injected into the through hole th1, the through hole th2, the through hole th3 and the through hole th4 by dispensing a conductive paste (indicated by a nozzle 134 in the figure) to form a first repair line RL1 and a second repair line RL2. Fig.16 The conductive glue 132 may be silver glue, for example. According to this embodiment, the receiving hole AH of the light emitting unit 104a without abnormality will not form the first repair line RL1 and the second repair line RL2, nor will it have a through hole, but the present invention is not limited thereto.

[0041] Please refer to Figure 17 to Figure 18 , Fig.17 is a schematic top view of a seventh embodiment of a light emitting device of the present invention, Fig.18 for Fig.17 The light emitting device is shown as a cross-sectional diagram along the section line CC'. The light emitting device 100 of this embodiment uses the fourth conductive layer ML4 to make a shared electrode conductor CML. The shared electrode conductor CML can be located between adjacent light emitting units 104, extending along a direction (such as direction Dy) and connected to the chip 130. Taking the adjacent light emitting units 1041 and 1042 as an example, the second repair line RL2 therein can directly connect the shared electrode conductor CML between the two, and the chip 130 can provide a shared electrode signal through the shared electrode conductor CML. Fig.18In the embodiment, a portion of the shared electrode conductor CML can be electrically connected to the shared electrode CME via the through hole th4, but the invention is not limited thereto. In some embodiments, the light-emitting device 100 can have a touch or sensing function, and can use the shared electrode conductor CML and / or the shared electrode conductor CM to provide a shared signal and a touch or sensing signal according to different timings. For example, in the display operation timing, the shared electrode conductor CML and / or the shared electrode conductor CM will comprehensively provide a continuous shared signal to the second electrode CE2 of the first light-emitting diode LD1, and in the touch or sensing operation timing, the chip 130 can provide the shared electrode conductor CML and / or the shared electrode conductor CM with touch signals or sensing signals of different timings in different regions to control the opening and closing of the touch or sensing units in each region, such as providing a touch signal with a frequency of more than 60 Hz. Under this design, the shared electrode conductor CML and / or the shared electrode conductor CM can be used to achieve the display and touch or sensing functions.

[0042] The light-emitting device provided by the present invention may include more than one light-emitting unit, and the light-emitting unit has a first light-emitting diode and a receiving hole, and the receiving hole is used to reserve a second light-emitting diode for repair. In some embodiments, the repair line can be made in each light-emitting unit at one time by using the manufacturing method of a circuit array (array), so although the second light-emitting diode is not set in the receiving hole of some light-emitting units, there will still be a repair line near the receiving hole. The second light-emitting diode and the repair line are formed by the manufacturing method of the light-emitting device of the present invention, and a certain process efficiency can be maintained or improved while improving the qualified rate. In some embodiments, the repair line can be made separately for the abnormal light-emitting units by dispensing, and in this case, only some of the light-emitting units may have the repair line. In general, according to the spirit of the present invention, each light-emitting unit of the light-emitting device can include a first light-emitting diode and a receiving hole at the same time, and the receiving hole reserves a repair space, but only a small part of the receiving hole may be provided with a second light-emitting diode, for example, the number of the second light-emitting diode may be less than or much less than the number of the first light-emitting diode. Furthermore, the accommodation hole in the light-emitting unit can be filled with a planar layer or a packaging material, so that the display device has a flatter surface, which is convenient for subsequent manufacturing processes.

[0043] Without violating the spirit of the invention or without conflict, the features, structures and method steps in the aforementioned embodiments and variant embodiments may be mixed and used in any manner.

[0044] The above description is only an embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A light emitting device, characterized in that: include: a substrate; A light emitting unit is disposed on the substrate, and the light emitting unit comprises: A receiving hole; a first light emitting diode, wherein the first light emitting diode is separated from the receiving hole; A second light emitting diode is disposed in the receiving hole; a pixel definition layer, the pixel definition layer comprising an opening, and the first light emitting diode is disposed in the opening; and a first planar layer, disposed on the first light-emitting diode and in the opening of the pixel definition layer, and the first planar layer includes the receiving hole; and A thin film transistor is disposed on the substrate, the thin film transistor is electrically connected to the second light emitting diode, and the thin film transistor is electrically isolated from the first light emitting diode.

2. The light emitting device according to claim 1, characterized in that: Also includes: an insulating layer, disposed between the thin film transistor and the first light emitting diode, wherein the thin film transistor includes an electrode; as well as a first conductive layer, the first conductive layer comprising: the electrode of the thin film transistor; a first common electrode wire electrically connecting the first light emitting diode and a common voltage source; and A second shared electrode wire is electrically connected to the second light emitting diode and the shared voltage source.

3. The light emitting device according to claim 1, characterized in that: The invention also comprises a repair line, at least a part of which partially overlaps with the receiving hole in a thickness direction of the substrate, and the repair line is electrically connected to a conducting wire.

4. The light emitting device according to claim 1, characterized in that: The first light-emitting diode includes a semiconductor layer and an electrode, the electrode is arranged on the upper surface of the semiconductor layer, and the electrode is electrically connected to a first common electrode wire, the second light-emitting diode includes another semiconductor layer and another electrode, the other electrode is arranged on the upper surface of the other semiconductor layer, and the other electrode is electrically connected to a second common electrode wire, wherein in a cross-sectional view of the light-emitting device, the first light-emitting diode and the second light-emitting diode are arranged between the first common electrode wire and the second common electrode wire.

5. The light emitting device according to claim 4, characterized in that: The second light emitting diode is a flip-chip light emitting diode.

6. The light emitting device according to claim 1, characterized in that: The invention also comprises a protection layer which partially covers the first flat layer and partially fills the receiving hole.

7. The light emitting device according to claim 6, characterized in that: The invention also comprises a repair line, a part of which is arranged on the protection layer, and another part of which is extended in the protection layer along a thickness direction of the substrate.

8. The light emitting device according to claim 7, characterized in that: The other part of the repair line has a gap with the bottom of the receiving hole.

9. A light emitting device, characterized in that: include: a substrate; A light emitting unit is disposed on the substrate, and the light emitting unit comprises: A storage hole; a first light emitting diode, wherein the first light emitting diode is separated from the receiving hole; and A second light emitting diode is disposed in the receiving hole; a thin film transistor, disposed on the substrate, the thin film transistor being electrically connected to the second light emitting diode; an insulating layer disposed between the thin film transistor and the first light emitting diode, wherein the thin film transistor includes an electrode; and a first conductive layer, the first conductive layer comprising: the electrode of the thin film transistor; a first common electrode wire electrically connecting the first light emitting diode and a common voltage source; and A second shared electrode wire is electrically connected to the second light emitting diode and the shared voltage source.

10. The light emitting device according to claim 9, characterized in that: Also includes: a protective layer, which partially covers the first flat layer and partially fills the receiving hole; as well as A repair line, a portion of which is disposed on the protection layer, and another portion of which extends in the protection layer along a thickness direction of the substrate.

11. The light emitting device according to claim 9, characterized in that: The first light-emitting diode includes a semiconductor layer and an electrode, the electrode is arranged on the upper surface of the semiconductor layer, and the electrode is electrically connected to the first shared electrode wire, the second light-emitting diode includes another semiconductor layer and another electrode, the other electrode is arranged on the upper surface of the other semiconductor layer, and the other electrode is electrically connected to the second shared electrode wire, wherein in a cross-sectional view of the light-emitting device, the first light-emitting diode and the second light-emitting diode are arranged between the first shared electrode wire and the second shared electrode wire.

12. A method for manufacturing a light emitting device, characterized in that: include: providing a substrate; forming a circuit layer on the substrate, wherein the circuit layer includes a thin film transistor; forming a pixel definition layer on the substrate, wherein the pixel definition layer includes an opening; A first light emitting diode of a light emitting unit is arranged on the substrate in the opening; Disposing a first planar layer on the first light emitting diode and in the opening; Patterning the first flat layer to form a receiving hole of the light-emitting unit, wherein the receiving hole and the first light-emitting diode are separated from each other; A second light emitting diode of the light emitting unit is arranged in the receiving hole; electrically connecting the thin film transistor and the second light emitting diode; as well as The thin film transistor and the first light emitting diode are electrically isolated.

13. The method for manufacturing a light emitting device according to claim 12, characterized in that: Forming the circuit layer includes: forming an insulating layer between the thin film transistor and the first light emitting diode; and A first conductive layer is formed, wherein the first conductive layer comprises: an electrode of the thin film transistor; a first shared electrode wire, wherein the first shared electrode wire is electrically connected to the first light emitting diode and a shared voltage source; and A second shared electrode wire, wherein the second shared electrode wire is electrically connected to the second light emitting diode and the shared voltage source.

14. The method for manufacturing a light emitting device according to claim 13, characterized in that: The method further includes the step of forming a repair line, wherein the repair line electrically connects the second light emitting diode to the circuit layer.

15. The method for manufacturing a light emitting device according to claim 14, characterized in that: The method further includes forming a protective layer in the receiving hole, and the repair line extends into the protective layer along a thickness direction parallel to the substrate.

16. The method for manufacturing a light emitting device according to claim 13, characterized in that: The method further includes performing a detection procedure to confirm whether the first light emitting diode in the light emitting unit is abnormal. If an abnormality occurs, the second light emitting diode is arranged in the receiving hole of the light emitting unit.

17. The method for manufacturing a light emitting device according to claim 12, characterized in that: The method of manufacturing the receiving hole of the light emitting unit includes: forming the first planar layer on the substrate to cover the first light emitting diode; and A portion of the first planar layer is removed to form the receiving hole on one side of the first light emitting diode.

18. The method for manufacturing a light emitting device according to claim 17, characterized in that: The method also includes forming a protection layer on the substrate, partially covering the first flat layer and partially filling the receiving hole.

19. The method for manufacturing a light emitting device according to claim 12, characterized in that: The first light-emitting diode includes a semiconductor layer and an electrode, the electrode is arranged on the upper surface of the semiconductor layer, and the electrode is electrically connected to a first common electrode wire, the second light-emitting diode includes another semiconductor layer and another electrode, the other electrode is arranged on the upper surface of the other semiconductor layer, and the other electrode is electrically connected to a second common electrode wire, and in a cross-sectional view of the light-emitting device, the first light-emitting diode and the second light-emitting diode are arranged between the first common electrode wire and the second common electrode wire.

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