Split exposure mask, split exposure method, exposure pattern and touch sensor

Abstract

A split exposure mask, a split exposure method, an exposure pattern, and a touch sensor are provided. The split exposure mask is used to form a pattern by split exposure on a substrate having N split exposure regions, has a size corresponding to 2 to N-1 split exposure regions, and is split into 2 to N-1 regions.

Description

Technical Field

[0001] The present invention relates to a split exposure, and more particularly to a split exposure mask, a split exposure method, an exposure pattern and a touch sensor capable of preventing or minimizing the recognition of uneven traces at a split exposure boundary portion by minimizing differences such as step differences and line widths at the split exposure boundary portion. Background Art

[0002] In a display device, an array substrate may include a thin film transistor, a pixel electrode, etc. When forming the pixel electrode, etc., a pattern forming process is involved, and the pattern forming process includes deposition, photolithography, etching, etc., wherein the photolithography process performs the following process: a photoresist is applied to the entire surface of the substrate, and then a mask is placed on the substrate and exposed.

[0003] In recent years, with the development of large-scale display devices, patterns are usually formed on large-area substrates. In this case, it is difficult to form patterns on large-area substrates by single exposure. Therefore, a method of dividing the substrate into multiple exposure areas and exposing each divided exposure area in turn, that is, a divided exposure method, is applied.

[0004] Figure 1 A conventional split exposure method is shown.

[0005] like Figure 1 As shown, in the divided exposure, the substrate 10 may be divided into a plurality of divided exposure regions 11 to 13 , and a pattern may be formed on the entire substrate 10 while the respective divided exposure regions 11 to 13 are sequentially exposed through the exposure mask 20 .

[0006] However, when split exposure is performed while moving the exposure mask 20, misalignment may occur between adjacent split exposure areas 11 to 13 due to shift, rotation, deformation, etc., and in this case, due to overlapping exposure at the boundary portion, twice the light is applied to the photoresist, and as a result, the thickness or width of the pattern may change at the boundary portion.

[0007] When the pattern is a circuit wiring such as a touch sensor, a change in the thickness or width of the pattern changes the wiring resistance and causes problems such as signal delay. The thickness or width of the pattern may change at the boundary portion of the divided exposure area, in which case a difference in screen brightness may result, and as a result, uneven banding (stitch) may appear at the boundary portion of the divided exposure area, resulting in a decrease in screen quality.

[0008] Figure 1The case where the substrate 10 is divided into three divided exposure areas 11 to 13 is shown. In this case, two boundary portions B1 and B4 may be formed at the outermost sides of the exposure areas, and two boundary portions B2 and B3 may be formed between the divided exposure areas on the substrate 10. Here, regarding the unevenness of the traces, the second boundary portion B2 and the third boundary portion B3 within the display area are important. If a large difference in thickness or width is generated in these boundary portions B2 and B3, the possibility of the unevenness of the traces being visible to the naked eye increases.

[0009] exist Figure 1 In FIG. 1 , assuming that the exposure mask 20 forms pattern thicknesses a and b at the left and right ends of the exposure mask 20 respectively due to inherent exposure deviation, in the second boundary portion B2, the step difference of the boundary portion may occur in the form of b:a, and in the third boundary portion B3, the step difference of the boundary portion may occur in the form of b:a. Figure 1 In the exposure mask 20, since the exposure does not overlap, the exposure amount of the exposure mask 20 is 100% of the reference exposure amount. In this case, in the second boundary portion B2 and the third boundary portion B3, the difference in the step difference of the boundary portion can be an absolute value |ba| respectively. As described above, in Figure 1 In the prior art, the difference in pattern thickness, i.e., the difference in step difference, occurring at the boundary portion of the divided exposure region actually directly reflects the inherent exposure deviation of the exposure mask 20. If the inherent exposure deviation of the exposure mask 20 is large, the absolute value |ba| becomes large, and as a result, the possibility of recognizing uneven traces at the boundary portion of the divided exposure region becomes high.

[0010] In order to solve this problem, Korean Patent Publication No. 2006-0036606 (liquid crystal display device manufacturing method) proposes a method of overlapping split exposure in one or two mask processes of a mask process for forming a gate wiring, a mask process for forming an active layer, a mask process for forming a source / drain electrode, and a mask process for forming a contact hole on a protective film. However, Korean Patent Publication No. 2006-0036606 proposes a method of overlapping boundaries of different patterns (not one pattern), and has limitations in minimizing the variation in thickness or width of the pattern occurring at the boundary portion when forming one pattern.

[0011] Korean Patent Publication No. 2007-0052035 (Split Exposure Type Exposure Apparatus and Pattern Forming Method Using the Apparatus) proposes that the light shielding region is composed of a portion of the light transmitting portion whose transmittance gradually changes. However, Korean Patent Publication No. 2007-0052035 has limitations in reducing the difference in thickness or width of the pattern at the boundary portion because the boundary portion is widely expanded. Summary of the invention

[0012] Technical issues

[0013] In order to solve the problems of the prior art, the present invention aims to provide a segmented exposure mask and a segmented exposure method using the segmented exposure mask:

[0014] First, the difference in step difference, line width, etc. can be minimized at the boundary portion of the divided exposure area;

[0015] Second, it is possible to prevent the boundary of the divided exposure area from being recognized in a visual test by minimizing the difference in step and line width of the boundary portion.

[0016] Solutions for solving problems

[0017] The split exposure mask of the present invention for achieving this purpose is used to form a pattern by split exposure on a substrate having N split exposure areas, and the split exposure mask has a size corresponding to the size of 2 to (N-1) split exposure areas, and is divided into 2 to (N-1) areas. Wherein N can be a natural number greater than 3.

[0018] In the segmented exposure mask of the present invention, when the number of 2 to (N-1) (ie, the number of segmented mask regions) is M, the number of exposure shots may be N+M-1.

[0019] In the segmented exposure mask of the present invention, the segmented regions of the mask can be selectively composed of light-transmitting regions or light-shielding regions.

[0020] In the split exposure mask of the present invention, the first to M-th exposure shots expose the substrate from one end to the M-th split exposure area, and a mask split area can be added to the light-transmitting area in one direction of the substrate. At this time, the M-th exposure shot can constitute all the mask split areas as light-transmitting areas.

[0021] In the split exposure mask of the present invention, exposure shots from the M+1th to the N-2th are performed while moving one mask split area in sequence in the direction of the other end of the substrate in the Mth exposure shot, and all the mask split areas can be constructed as light-transmitting areas.

[0022] In the split exposure mask of the present invention, the exposure shots from the N-1th to the N+M-1th can expose the substrate from the other end along one direction to the Mth split exposure area, the N-1th exposure shot makes all the mask split areas into light-transmitting areas, and from the Nth exposure shot onwards, the light-shielding area can be sequentially increased by one mask split area in one direction of the substrate. In this case, the N+M-1th exposure shot can make M-1 mask split areas into light-shielding areas.

[0023] In the split exposure mask of the present invention, when a substrate is exposed using one exposure mask, the exposure amount irradiated is E, and the exposure amount can be adjusted to E / M times each exposure shot.

[0024] The division exposure method according to the present invention may be composed of a substrate division step, a mask division step, an exposure amount adjustment step, and a division exposure step.

[0025] The substrate segmentation step can segment the substrate into N segmented exposure regions, where N can be a natural number greater than or equal to 3.

[0026] In the mask dividing step, a divided exposure mask having a size corresponding to 2 to (N-1) divided exposure regions may be divided into 2 to (N-1) mask divided regions.

[0027] In the exposure amount adjustment step, when the number of 2 to (N-1) is M and the exposure amount irradiated when the substrate is exposed using one exposure mask is E, the exposure amount of the divided exposure mask is reduced to E / M.

[0028] In the split exposure step, the mask split regions can be selectively configured as light-transmitting regions or light-shielding regions. The split exposure step can sequentially expose the substrate from one end to the other end through N+M-1 exposure shots, and at least one mask split region can overlap.

[0029] In the split exposure step of the split exposure method according to the present invention, the first to M-th exposure shots expose the substrate from one end to the M-th split exposure area, and one mask split area can be sequentially added to the light-transmitting area in one direction of the substrate. At this time, the M-th exposure shot can constitute all the mask split areas as light-transmitting areas.

[0030] In the split exposure step of the split exposure method according to the present invention, exposure is performed while moving one mask split area in sequence in the direction of the other end of the substrate in the Mth exposure shot from the M+1th to the N-2th exposure shot, and all the mask split areas can be constructed as light-transmitting areas.

[0031] In the split exposure step of the split exposure method according to the present invention, the exposure shots from the N-1th to the N+M-1th can expose the substrate from the other end along one direction to the Mth split exposure area, the N-1th exposure shot makes all the mask split areas into light-transmitting areas, and from the Nth exposure shot, the light-shielding area can be sequentially increased by one mask split area in one direction of the substrate. In this case, the N+M-1th exposure shot can make M-1 mask split areas into light-shielding areas.

[0032] In the split exposure method according to the present invention, the split exposure step can reduce the difference in step or line width of the pattern at the boundary of the split exposure area of ​​the substrate by 1 / M times compared with non-overlapping split exposure.

[0033] The split exposure method according to the present invention can be used to form a pattern in a touch sensor.

[0034] Another aspect of the present invention may be a touch sensor, a liquid crystal display, etc. manufactured by the above-mentioned split exposure method.

[0035] The exposure pattern according to the present invention has a size corresponding to 2 to (N-1) divided exposure areas on a substrate having N divided exposure areas, and is an exposure pattern formed by performing divided exposure using a divided exposure mask divided into 2 to (N-1) divided exposure areas (N is a natural number greater than 3), and if the number of 2 to (N-1) is M, then when the relationship expression N>2M is satisfied, except for 2M boundary parts located on both sides, the difference in the boundary part step of the remaining N+1-2M boundary parts located at the center may be constant along the boundary of the boundary part or form a contour of a predetermined shape while changing. The contour of the predetermined shape may be repeated at the N+1-2M boundary parts.

[0036] In the exposure pattern according to the present invention, when the thickness or width of the pattern of the divided exposure mask decreases or increases nonlinearly from one end to the other end according to the inherent exposure deviation, the difference in the step difference of the boundary portion decreases from the central boundary portion to the two side boundary portions.

[0037] The exposure pattern according to the present invention may have a symmetrical structure centered on the central boundary portion.

[0038] In the exposure pattern according to the present invention, the same value in the difference of the step difference of the boundary portion may be a pattern thickness difference or a pattern width difference between both ends of the divided exposure mask.

[0039] In the exposure pattern according to the present invention, the difference in step of the boundary portion may be a thickness difference or a width difference of the pattern.

[0040] The touch sensor according to the present invention may include the exposure pattern having the above-described structure.

[0041] Effects of the Invention

[0042] According to the split exposure mask of the present invention having such a structure and the split exposure method using the split exposure mask, the difference in thickness, line width, etc. at the boundary portion of the split exposure area can be reduced in inverse proportion to the number M of the mask split areas.

[0043] Furthermore, according to the segmented exposure mask and the segmented exposure method using the segmented exposure mask of the present invention, it is possible to prevent the boundaries of the segmented exposure areas from being recognized in a visual test by significantly reducing the differences in step differences, line widths, etc. at the boundary portions of the segmented exposure areas. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] Figure 1 A conventional split exposure method is shown.

[0045] Figure 2 A split exposure mask according to a first embodiment of the present invention and a split exposure method using the split exposure mask are shown.

[0046] Figure 3 A split exposure mask and a split exposure method using the split exposure mask according to a second embodiment of the present invention are shown.

[0047] Figure 4 A split exposure mask and a split exposure method using the split exposure mask according to a third embodiment of the present invention are shown.

[0048] Figure 5 A split exposure mask and a split exposure method using the split exposure mask according to a fourth embodiment of the present invention are shown. DETAILED DESCRIPTION

[0049] Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

[0050] Figure 2 A split exposure mask according to a first embodiment of the present invention and a split exposure method using the split exposure mask are shown.

[0051] like Figure 2 As shown, in the first embodiment, the substrate 100 is divided into three divided exposure regions 110 to 130, and the divided exposure mask 200 is divided into two mask divided regions 210 and 220, so that the substrate 100 can be sequentially subjected to divided exposure.

[0052] The substrate 100 may be formed at an outer end ( Figure 2 A first boundary portion B1 is formed between the first divided exposure region 110 and the second divided exposure region 120, a second boundary portion B2 is formed between the second divided exposure region 120 and the third divided exposure region 130, and a third boundary portion B3 is formed at the outer end ( Figure 2 The right end in the middle forms a fourth boundary portion B4.

[0053] The segmented exposure mask 200 may consist of two, ie, first and second mask segmented regions 210 and 220. The segmented exposure mask 200 may correspond to the size of two segmented exposure regions 110 and 120 or 120 and 130 of the segmented exposure regions 110 to 130 of the substrate 100.

[0054] Assume that due to inherent exposure deviation, the divided exposure mask 200 is at the outer end ( Figure 2 ), the central boundary portion (ie, the boundary between the first mask segmentation region 210 and the second mask segmentation region 220), and the outer end of the second mask segmentation region 220 ( Figure 2 The right end in FIG. 1 is formed with pattern thicknesses a, b, and c, respectively. Here, a, b, and c may all be different values, or two or more may be the same value.

[0055] The split exposure mask 200 can selectively configure the mask split regions 210 and 220 as light-transmitting regions T or light-shielding regions C. For example, the split exposure mask 200 can configure the first mask split region 210 as the light-transmitting region T, the second mask split region 220 as the light-shielding region C, the first mask split region 210 and the second mask split region 220 as the light-transmitting region T, or the first mask split region 210 as the light-shielding region C and the second mask split region 220 as the light-transmitting region T.

[0056] In the split exposure method of the first embodiment using such split exposure mask 200, the number of times light is irradiated to split exposure mask 200 (i.e., the number of exposure shots) can be set to 4. In the first embodiment, the number of exposure shots (i.e., 4) is equal to the number obtained by subtracting 1 from the value obtained by adding the number of divisions of substrate 100 and the number of divisions of split exposure mask 200, i.e., equal to the number 3+2-1.

[0057] Looking at the four exposure shots S1 to S4 in detail, first, the first exposure shot S1 exposes two split exposure regions from the left end of the substrate 100, that is, the first split exposure region 110 and the second split exposure region 120. In this case, the split exposure mask 200 can constitute the first mask split region 210 as the light-transmitting region T, and the second mask split region 220 as the light-shielding region C.

[0058] The second exposure shot S2 may again expose two divided exposure regions 110 and 120 (i.e., first divided exposure region 110 and second divided exposure region 120) from the same position as the first exposure shot S1 (i.e., the left end of the substrate 100). In this case, the divided exposure mask 200 may constitute both the first mask divided region 210 and the second mask divided region 220 as light-transmitting regions T.

[0059] The third exposure shot S3 may expose the position of the second exposure shot S2 moved rightward by one divided exposure region (i.e., the second divided exposure region 120 and the third divided exposure region 130 of the substrate 100). In this case, the divided exposure mask 200 may constitute both the first mask divided region 210 and the second mask divided region 220 as the light-transmitting region T.

[0060] The fourth exposure shot S4 may expose the same position as the third exposure shot S3 again (i.e., the second divided exposure region 120 and the third divided exposure region 130 of the substrate 100). In this case, the divided exposure mask 200 may configure the first mask divided region 210 as the light shielding region C, and the second mask divided region 220 as the light transmitting region T.

[0061] The pattern thicknesses at the second boundary portion B2 and the third boundary portion B3 generated by the split exposure mask 200 of the first embodiment and the split exposure method using the split exposure mask 200 may be as follows.

[0062] like Figure 2 As shown, it is assumed that due to the inherent exposure deviation, the split exposure mask 200 is at the outer end of the first mask split region 210 ( Figure 2 ), the boundary between the first mask segmentation region 210 and the second mask segmentation region 220, and the outer end of the second mask segmentation region 220 ( Figure 2 The right end in the figure) is formed with pattern thicknesses a, b and c respectively, then in the second boundary portion B2, the boundary portion step difference can be generated as 2b:b+a, and in the third boundary portion B3, the boundary portion step difference can be generated as c+b:2b.

[0063] In addition, since the first embodiment irradiates the divided exposure areas 110 to 130 of the substrate 100 with two exposure shots through four exposure shots, a double exposure amount is irradiated to each of the divided exposure areas 110 to 130. Therefore, it is necessary to correct the exposure amount. That is, in the first embodiment, one exposure shot can be made 1 / 2 of the reference exposure amount.

[0064] If adjustment of 1 / 2 of the exposure amount is applied to the step difference of the boundary portion, the step difference of the second boundary portion B2 becomes 2b / 2: (b+a) / 2, and the step difference of the third boundary portion B3 becomes (c+b) / 2: 2b / 2.

[0065] Finally, the difference in the boundary portion step difference between the second boundary portion B2 and the third boundary portion B3 is obtained, and the absolute value at the second boundary portion B2 becomes |ba| / 2, and the absolute value at the third boundary portion B3 becomes |cb| / 2. As a result, compared with the absolute value |ba| of the difference in the boundary portion step difference between the boundary portions B2 and B3 described in the prior art, when it is assumed that the inherent exposure deviation of the divided exposure mask 200 is the same as or almost similar to the inherent exposure deviation of the exposure mask 20 described in the prior art, it can be seen that the difference in the boundary portion step difference between the second boundary portion B2 and the third boundary portion B3 formed by the present invention is reduced to about 1 / 2.

[0066] The reduction in the difference in step difference of the boundary portion may significantly reduce the possibility of recognizing trace unevenness at the boundary portion of the divided exposure regions 110 to 130 of the substrate 100 .

[0067] Figure 3 A split exposure mask and a split exposure method using the split exposure mask according to a second embodiment of the present invention are shown.

[0068] like Figure 3 As shown, the second embodiment shows a case where the substrate 100 is divided into four divided exposure regions 110 to 140 and the divided exposure mask 200 is divided into two mask divided regions 210 to 220 , thereby performing divided exposure on the substrate 100 .

[0069] Due to the four divided exposure regions 110 to 140 , the substrate 100 may form five boundary portions, ie, first to fifth boundary portions B1 to B5 .

[0070] The divided exposure mask 200 may be composed of two mask divided regions 210 and 220 and may have a size corresponding to the size of the two divided exposure regions (110 and 120, 120 and 130, or 130 and 140).

[0071] The divided exposure mask 200 can selectively configure the mask divided regions 210 and 220 as the light-transmitting region T or the light-shielding region C.

[0072] In the split exposure method of the second embodiment using such split exposure mask 200, the number of times light is irradiated to split exposure mask 200 (i.e., the number of exposure shots) can be set to 5. In the second embodiment, the number of exposure shots (i.e., 5 times) is equal to the number obtained by subtracting 1 from the value obtained by adding the number of divisions of substrate 100 and the number of divisions of split exposure mask 200, i.e., equal to the number 4+2-1.

[0073] Looking at the four exposure shots S1 to S5 in detail, first, the first exposure shot S1 exposes two split exposure regions from the left end of the substrate 100, that is, the first split exposure region 110 and the second split exposure region 120. In this case, the split exposure mask 200 can constitute the first mask split region 210 as the light-transmitting region T, and the second mask split region 220 as the light-shielding region C.

[0074] The second exposure shot S2 may expose the same position as the first exposure shot S1 again (ie, the first divided exposure area 110 and the second divided exposure area 120). In this case, the divided exposure mask 200 may constitute both the first mask divided area 210 and the second mask divided area 220 as light-transmitting areas T.

[0075] The third exposure shot S3 may expose the position of the second exposure shot S2 moved rightward by one divided exposure region (i.e., the second divided exposure region 120 and the third divided exposure region 130 of the substrate 100). In this case, the divided exposure mask 200 may constitute both the first mask divided region 210 and the second mask divided region 220 as the light-transmitting region T.

[0076] The fourth exposure shot S4 may expose the position of the third exposure shot S3 moved rightward by one divided exposure region (i.e., the third divided exposure region 130 and the fourth divided exposure region 140 of the substrate 100). In this case, the divided exposure mask 200 may constitute both the first mask divided region 210 and the second mask divided region 220 as the light-transmitting region T.

[0077] The fifth exposure shot S5 exposes the same position as the fourth exposure shot S4 again (i.e., the third divided exposure area 130 and the four divided exposure area 140 of the substrate 100). In this case, the divided exposure mask 200 can constitute the first mask divided area 210 as the light shielding area C, and the second mask divided area 220 as the light transmitting area T.

[0078] The thickness of patterns at the second to fourth boundary portions B2 to B4 generated by the split exposure mask 200 of the second embodiment and the split exposure method using the split exposure mask 200 may be as follows.

[0079] Assuming that the segmented exposure mask 200 is formed with pattern thicknesses a, b and c respectively at the left end of the first mask segmentation area 210, the boundary between the first mask segmentation area 210 and the second mask segmentation area 220, and the right end of the second mask segmentation area 220, then in the second boundary portion B2, the boundary portion step difference can be generated as 2b:b+a, in the third boundary portion B3, the boundary portion step difference can be generated as c+b:b+a, and in the fourth boundary portion B4, the boundary portion step difference can be generated as c+b:2b.

[0080] Furthermore, since the second embodiment irradiates two exposure shots to the divided exposure regions 110 to 140 of the substrate 100 respectively through five exposure shots, double exposure amount is irradiated to each of the divided exposure regions 110 to 140. Therefore, the exposure amount needs to be corrected, and in the second embodiment, one exposure shot can be reduced to 1 / 2 of the reference exposure amount.

[0081] If 1 / 2 of the exposure amount is reduced and applied to the step difference of the boundary portion, the boundary portion step difference of the second boundary portion B2 is corrected to 2b / 2:(b+a) / 2, the step difference of the third boundary portion B3 is corrected to (c+b) / 2:(b+a) / 2, and the step difference of the fourth boundary portion B4 is corrected to (c+b) / 2:2b / 2.

[0082] As a result, in the second embodiment, the difference in the boundary portion step difference from the second boundary portion B2 to the fourth boundary portion B4 is found, and the absolute value at the second boundary portion B2 becomes |ba| / 2, the absolute value at the third boundary portion B3 becomes |ca| / 2, and the absolute value at the fourth boundary portion B4 becomes |cb| / 2. As a result, compared with the absolute value |ba| of the difference in the boundary portion step difference at the boundary portions B2 and B3 described in the prior art, when it is assumed that the inherent exposure deviation of the divided exposure mask 200 is the same as or almost similar to the inherent exposure deviation of the exposure mask 20 described in the prior art, it can be seen that the difference in the boundary portion step difference at the second boundary portion B2 to the fourth boundary portion B4 of the second embodiment is reduced to about 1 / 2.

[0083] Figure 4 A split exposure mask and a split exposure method using the split exposure mask according to a third embodiment of the present invention are shown.

[0084] like Figure 4 As shown, the third embodiment shows the following situation: the substrate 100 is divided into four divided exposure regions 110 to 140 , and the divided exposure mask 200 is divided into three mask divided regions 210 to 230 , so as to perform divided exposure on the substrate 100 .

[0085] Due to the four divided exposure regions 110 to 140 , the substrate 100 may form five boundary portions, ie, first to fifth boundary portions B1 to B5 .

[0086] The divided exposure mask 200 may be composed of three mask divided regions 210 to 230 and may have a size corresponding to the size of the three divided exposure regions (110 to 130 or 120 to 140).

[0087] Assume that due to inherent exposure deviation, the divided exposure mask 200 is formed with pattern thicknesses a, b, c, and d at the boundaries of the first mask division area 210 to the third mask division area 230. Here, a, b, c, and d can all be different values, or two or more can be the same value.

[0088] The divided exposure mask 200 can selectively configure the mask divided regions 210 to 230 as the light-transmitting region T or the light-shielding region C.

[0089] In the split exposure method of the third embodiment using such split exposure mask 200, the number of times light is irradiated to split exposure mask 200 (i.e., the number of exposure shots) can be set to 6. In the third embodiment, the number of exposure shots (i.e., 6) is equal to the number obtained by subtracting 1 from the value obtained by adding the number of divisions of substrate 100 and the number of divisions of split exposure mask 200, i.e., equal to the number 4+3-1.

[0090] Looking at the six exposure shots S1 to S6 in detail, first, the first exposure shot S1 exposes three divided exposure regions from the left end of the substrate 100, that is, the first divided exposure region 110 to the third divided exposure region 130. In this case, the divided exposure mask 200 can constitute the first mask divided region 210 as the light-transmitting region T, and the second mask divided region 220 and the third mask divided region 230 as the light-shielding region C.

[0091] The second exposure shot S2 may expose the same position as the first exposure shot S1 again (i.e., the first to third divided exposure regions 110 to 130 of the substrate 100). In this case, the divided exposure mask 200 may configure the first mask divided region 210 and the second mask divided region 220 as the light-transmitting region T, and the third mask divided region 230 as the light-shielding region C.

[0092] The third exposure shot S3 may expose the same position as the second exposure shot S2 again (i.e., the first to third divided exposure regions 110 to 130 of the substrate 100). In this case, the divided exposure mask 200 may constitute all of the first to third divided mask regions 210 to 230 as light-transmitting regions T.

[0093] The fourth exposure shot S4 may be moved rightward by one segmented exposure region from the third exposure shot S3 (i.e., the second segmented exposure region 120 to the fourth segmented exposure region 140 of the substrate 100) for exposure. In this case, the segmented exposure mask 200 may constitute all of the first mask segmented region 210 to the third mask segmented region 230 as light-transmitting regions T.

[0094] The fifth exposure shot S5 can expose the same position as the fourth exposure shot S4 again (i.e., the second divided exposure area 120 to the fourth divided exposure area 140 of the substrate 100). In this case, the divided exposure mask 200 can configure the first mask divided area 210 as the light shielding area C, and configure the second mask divided area 220 and the third mask divided area 230 as the light transmitting area T.

[0095] The sixth exposure shot S6 may expose the same position as the fifth exposure shot S5 again (i.e., the second divided exposure region 120 to the fourth divided exposure region 140 of the substrate 100). In this case, the divided exposure mask 200 may configure the first mask divided region 210 and the second mask divided region 220 as the light shielding region C, and configure the third mask divided region 230 as the light transmitting region T.

[0096] The thickness of patterns at the second to fourth boundary portions B2 to B4 generated by the split exposure mask 200 of the third embodiment and the split exposure method using the split exposure mask 200 may be as follows.

[0097] Assuming that the segmented exposure mask 200 is formed with pattern thicknesses a, b, c, and d at the left end of the first mask segmentation area 210, the boundary between the first mask segmentation area 210 and the second mask segmentation area 220, the boundary between the second mask segmentation area 220 and the third mask segmentation area 230, and the right end of the third mask segmentation area 230, respectively, then in the second boundary portion B2, the boundary portion step difference can be generated as 3b:2b+a, in the third boundary portion B3, the boundary portion step difference can be generated as 2c+b:c+2b, and in the fourth boundary portion B4, the boundary portion step difference can be generated as d+2c:3c.

[0098] In addition, since the third embodiment irradiates three exposure shots to the divided exposure areas 110 to 140 of the substrate 100 respectively through six exposure shots, three times the exposure amount is irradiated to each of the divided exposure areas 110 to 140. Therefore, it is necessary to correct the exposure amount. That is, in the third embodiment, it is necessary to reduce one exposure shot to 1 / 3 of the reference exposure amount.

[0099] If 1 / 3 of the exposure amount is reduced and applied to the step difference of the boundary portion, the boundary portion step difference of the second boundary portion B2 is corrected to 3b / 3:(2b+a) / 3, the step difference of the third boundary portion B3 is corrected to (2c+b) / 3:(c+2b) / 3, and the step difference of the fourth boundary portion B4 is corrected to (d+2c) / 3:3c / 3.

[0100] As a result, in the third embodiment, the difference in the boundary portion step difference from the second boundary portion B2 to the fourth boundary portion B4 is found, and the absolute value at the second boundary portion B2 becomes |ba| / 3, the absolute value at the third boundary portion B3 becomes |cb| / 3, and the absolute value at the fourth boundary portion B4 becomes |dc| / 3. As a result, compared with the absolute value |ba| of the difference in the boundary portion step difference at the boundary portions B2 and B3 described in the prior art, it can be seen that the difference in the boundary portion step difference at the second boundary portion B2 to the fourth boundary portion B4 is reduced to about 1 / 3.

[0101] Figure 5 A split exposure mask and a split exposure method using the split exposure mask according to a fourth embodiment of the present invention are shown.

[0102] like Figure 5 As shown, the fourth embodiment shows the following situation: the substrate 100 is divided into five divided exposure regions 110 to 150, and the divided exposure mask 200 is divided into three mask divided regions 210 to 230, so as to perform divided exposure on the substrate 100.

[0103] Due to the five divided exposure regions 110 to 150 , the substrate 100 may form first to fifth boundary portions B1 to B6 .

[0104] The divided exposure mask 200 may be composed of three mask divided regions 210 to 230 and may have a size corresponding to the size of the three divided exposure regions (110 to 130, 120 to 140, or 130 to 150).

[0105] The divided exposure mask 200 can selectively configure the mask divided regions 210 to 230 as the light-transmitting region T or the light-shielding region C.

[0106] In the split exposure method of the fourth embodiment using such split exposure mask 200, the number of times light is irradiated to split exposure mask 200 (i.e., the number of exposure shots) can be set to 7. In the third embodiment, the number of exposure shots (i.e., 7 times) is equal to the number obtained by subtracting 1 from the value obtained by adding the number of divisions of substrate 100 and the number of divisions of split exposure mask 200, i.e., equal to the number 5+3-1.

[0107] Looking at the seven exposure shots S1 to S7 in detail, first, the first exposure shot S1 exposes three divided exposure regions from the left end of the substrate 100, that is, the first divided exposure region 110 to the third divided exposure region 130. In this case, the divided exposure mask 200 can constitute the first mask divided region 210 as the light-transmitting region T, and the second mask divided region 220 and the third mask divided region 230 as the light-shielding region C.

[0108] The second exposure shot S2 may expose the same position as the first exposure shot S1 again (i.e., the first to third divided exposure regions 110 to 130 of the substrate 100). In this case, the divided exposure mask 200 may configure the first mask divided region 210 and the second mask divided region 220 as the light-transmitting region T, and the third mask divided region 230 as the light-shielding region C.

[0109] The third exposure shot S3 may expose the same position as the second exposure shot S2 again (i.e., the first to third divided exposure regions 110 to 130 of the substrate 100). In this case, the divided exposure mask 200 may constitute all of the first to third divided mask regions 210 to 230 as light-transmitting regions T.

[0110] The fourth exposure shot S4 may be moved rightward by one segmented exposure region from the third exposure shot S3 (i.e., the second segmented exposure region 120 to the fourth segmented exposure region 140 of the substrate 100) for exposure. In this case, the segmented exposure mask 200 may constitute all of the first mask segmented region 210 to the third mask segmented region 230 as light-transmitting regions T.

[0111] The fifth exposure shot S5 may be moved rightward by one segmented exposure region from the fourth exposure shot S4 (i.e., the third segmented exposure region 130 to the fifth segmented exposure region 150 of the substrate 100) for exposure. In this case, the segmented exposure mask 200 may constitute all of the first mask segmented region 210 to the third mask segmented region 230 as light-transmitting regions T.

[0112] The sixth exposure shot S6 may expose the same position as the fifth exposure shot S5 again (i.e., the third to fifth segmented exposure regions 130 to 150 of the substrate 100). In this case, the segmented exposure mask 200 may configure the first mask segmented region 210 as the light shielding region C, and configure the second mask segmented region 220 and the third mask segmented region 230 as the light transmitting region T.

[0113] The seventh exposure shot S7 may expose the same position as the sixth exposure shot S6 (i.e., the third to fifth divided exposure regions 130 to 150 of the substrate 100) again. In this case, the divided exposure mask 200 may configure the first mask divided region 210 and the second mask divided region 220 as the light shielding region C, and configure the third mask divided region 230 as the light transmitting region T.

[0114] The thickness of patterns at the second to fifth boundary portions B2 to B5 generated by the split exposure mask 200 of the fourth embodiment and the split exposure method using the split exposure mask 200 may be as follows.

[0115] Assuming that the segmented exposure mask 200 is formed with pattern thicknesses a, b, c, and d at the left end of the first mask segmentation area 210, the boundary between the first mask segmentation area 210 and the second mask segmentation area 220, the boundary between the second mask segmentation area 220 and the third mask segmentation area 230, and the right end of the third mask segmentation area 230, respectively, then in the second boundary portion B2, the boundary portion step difference can be generated as 3b:2b+a, in the third boundary portion B3, the boundary portion step difference can be generated as 2c+b:c+b+a, in the fourth boundary portion B4, the boundary portion step difference can be generated as d+c+b:c+2b, and in the fifth boundary portion B5, the boundary portion step difference can be generated as d+2c:3.

[0116] In addition, since the fourth embodiment irradiates three exposure shots to the divided exposure areas 110 to 150 of the substrate 100 respectively through seven exposure shots, three times the exposure amount is irradiated to each of the divided exposure areas 110 to 150. Therefore, it is necessary to correct the exposure amount. That is, in the fourth embodiment, it is necessary to reduce one exposure shot to 1 / 3 of the reference exposure amount.

[0117] If 1 / 3 of the exposure amount is reduced and applied to the step difference of the boundary portion, the boundary portion step difference of the second boundary portion B2 is corrected to 3b / 3:(2b+a) / 3, the step difference of the third boundary portion B3 is corrected to (2c+b) / 3:(c+b+a) / 3, the step difference of the fourth boundary portion B4 is corrected to (d+c+b) / 3:(c+2b) / 3, and the step difference of the fifth boundary portion B5 is corrected to (d+2c) / 3:3c / 3.

[0118] As a result, in the fourth embodiment, the difference in the boundary portion step difference from the second boundary portion B2 to the fifth boundary portion B5 is found, and the absolute value at the second boundary portion B2 becomes |ba| / 3, the absolute value at the third boundary portion B3 becomes |ca| / 3, the absolute value at the fourth boundary portion B4 becomes |db| / 3, and the absolute value at the fifth boundary portion B5 becomes |dc| / 3. As a result, compared with the absolute value |ba| of the difference in the boundary portion step difference at the boundary portions B2 and B3 described in the prior art, it can be seen that the difference in the boundary portion step difference at the second boundary portion B2 to the fifth boundary portion B5 is reduced to about 1 / 3.

[0119] To summarize the first to fourth embodiments, when the substrate 100 is divided into N divided exposure regions, the divided exposure mask 200 has a size corresponding to 2 to (N-1) divided exposure regions, and the number of divisions may be 2 to (N-1). Here, N may be a natural number greater than 3.

[0120] When the number of divisions of the substrate 100 is N and the number of divisions of the divided exposure mask 200 is M, the number of exposure shots using the divided exposure mask 200 may be set to N+M−1.

[0121] The divided exposure mask 200 selectively configures the mask divided regions as the light-transmitting regions T or the light-shielding regions C, but in each exposure shot, the light-transmitting regions T and the light-shielding regions C may be arranged as follows.

[0122] The exposure shots from the first to the Mth time can expose the same position of the substrate 100, that is, from one end of the substrate 100 to the Mth split exposure region. In this case, the split exposure mask 200 can sequentially increase the light-transmitting region T by one mask split region in one direction of the substrate 100 while changing the exposure shots from the first to the Mth time. That is, in the first exposure shot, one mask split region in the split exposure mask 200 is set as the light-transmitting region T, and in the second exposure shot, two mask split regions in the split exposure mask 200 are set as transparent regions T, and by increasing the light-transmitting regions T one by one in this manner, the Mth exposure shot can constitute all the mask split regions as the light-transmitting regions T.

[0123] The exposure shots from the M+1th to the N-2th are performed while sequentially moving one mask division area in the direction of the other end of the substrate 100 in the Mth exposure shot, and all the mask division areas can be configured as the light-transmitting areas T.

[0124] The exposure shots from the N-1th to the N+M-1th times can expose the substrate 100 from the other end along one direction to the Mth divided exposure region, the N-1th exposure shot configures all the mask divided regions as the light-transmitting region T, and from the Nth exposure shot onwards, the light-shielding region C can be sequentially increased by one mask divided region in one direction of the substrate 100. In this case, the N+M-1th exposure shot can configure the entire region (i.e., M-1 mask divided regions) except the final mask divided region as the light-shielding region C.

[0125] Furthermore, when the substrate 100 is exposed using a plurality of exposure shots, since one divided exposure region is exposed according to the number of divisions of the divided exposure mask (i.e., M times), if the reference exposure amount irradiated to one divided exposure region is E, the exposure amount of each exposure shot needs to be reduced to 1 / M times the reference exposure amount. The exposure amount of each exposure shot can be adjusted to an exposure amount of E / M times.

[0126] Table 1 below shows the boundary portion step differences generated at the boundary portion of the substrate 100 when the divided exposure mask 200 having 2, 3 or 4 mask divided regions is subjected to divided exposure, respectively, for the substrate 100 having 8 divided exposure regions.

[0127]

Table 1

[0128]

[0129] Table 2 below shows the difference in step difference at the boundary portion after correcting the exposure amount in the step difference of Table 1 above.

[0130]

Table 2

[0131] Boundary part / mask division number M 2 3 4 B1 a a a B2 |ba| / 2 |ba| / 3 |ba| / 4 B3 |ca| / 2 |ca| / 3 |ca| / 4 B4 |ca| / 2 |da| / 3 |da| / 4 B5 |ca| / 2 |da| / 3 |ea| / 4 B6 |ca| / 2 |da| / 3 |eb| / 4 B7 |ca| / 2 |db| / 3 |ec| / 4 B8 |cb| / 2 |dc| / 3 |ed| / 4 B9 c d e

[0132] In the above Tables 1 and 2, when the relationship between the number N of exposure division areas of the substrate 100 and the number M of mask division areas of the divided exposure mask 200 satisfies N>2M, it can be seen that, except for the 2M boundary parts located on both sides, the difference in the boundary part step difference of the remaining N+1-2M boundary parts located in the center is the same value. Here, when one position is taken as the object, it can be determined that the difference in the boundary part step difference in the N+1-2M boundary parts is the same value. However, the boundary of the boundary part forms a boundary line, in which case, along the boundary line, the difference in the boundary part step difference at each position of the boundary part can be the same, but can also vary. As described above, when the difference in the boundary part step difference varies along the boundary line of the boundary part, the difference in the boundary part step difference of the boundary part can form a contour having a predetermined shape along the boundary line. In this case, the contour of the predetermined shape formed along the boundary line can be repeated in almost the same form even if it is not exactly the same in the N+1-2M boundary parts located in the center.

[0133] In addition, due to inherent exposure deviation, the pattern thicknesses a, b, c, d, e generated by the split exposure mask 200 generally have a pattern that decreases or increases nonlinearly from one end to the other end, and when this trend is applied to the difference in step difference of the boundary portion in Table 2, it can be seen that the difference in step difference of the boundary portion is the largest at the center portion and tends to gradually decrease as it moves toward both sides, and can also have a basically symmetrical shape with the center portion as the center.

[0134] Furthermore, it can be seen that the difference in step difference of the boundary portion having the same value is represented by the difference in pattern thickness or the difference in pattern width at both ends of the divided exposure mask 200 .

[0135] The difference in step of the boundary portion as described above may be a difference in thickness or a difference in width of the pattern.

[0136] The split exposure mask according to the present invention and the exposure method using the split exposure mask as described above can be applied to the manufacture of various display devices including liquid crystal display devices, and can also be applied to the manufacture of components used in display devices (for example, touch sensors, etc.).

[0137] In the above, the split exposure mask of the present invention and the exposure method using the split exposure mask have been described with respect to the pattern thickness, but the same can also be applied to the pattern line width and the like.

[0138] In addition, the segmented exposure mask of the present invention and the exposure method using the segmented exposure mask can be applied to any pattern forming process to which an exposure process such as an exposure process of a wiring pattern and an insulating layer pattern can be applied.

[0139] In the above, the present invention has been described as various examples, which are intended to illustrate the present invention. Those skilled in the art will be able to deform or modify these embodiments in other forms. However, since the scope of the present invention is limited by the appended claims, it is understood that such deformation or modification is included within the scope of the present invention.

[0140] [Description of Reference Numerals]

[0141] 10, 100: substrate

[0142] 20: Exposure mask

[0143] 11 to 13, 110 to 150: Split exposure area

[0144] 200: Split exposure mask

[0145] 210 to 230: Mask segmentation area

[0146] B1 to B6: Boundary parts of divided exposure areas

[0147] C: Light-shielding area

[0148] S1 to S7: Exposure shooting

[0149] T: Translucent area.

Claims

1. An exposure pattern having a size corresponding to 2 to N-1 divided exposure areas on a substrate having N divided exposure areas, and formed by performing divided exposure using a single divided exposure mask divided into 2 to N-1, wherein N is a natural number greater than or equal to 3, If the number from 2 to N-1 is M, when the relationship expression N>2M is satisfied, in the exposure pattern, except for the boundary parts between the 2M divided exposure areas on both sides, the thickness difference or width difference of the pattern in the remaining N+1-2M boundary parts located in the center is constant along the boundary line formed by the boundaries of the boundary parts or forms a contour of a predetermined shape while changing, and the contour of the predetermined shape is repeated at the N+1-2M boundary parts.

2. The exposure pattern according to claim 1, wherein When the thickness or width of the pattern of the divided exposure mask decreases or increases nonlinearly from one end to the other end according to the inherent exposure deviation, the thickness difference or width difference of the pattern in the exposure pattern decreases from the central boundary portion to the two side boundary portions.

3. A touch sensor having the exposure pattern according to claim 1 or 2.

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