Electroluminescent devices

Abstract

The present application relates to an electroluminescent device. The electroluminescent device includes an image sensor structure, a first light blocking structure, a first insulating layer and an electroluminescent structure stacked in sequence. The electroluminescent structure includes a lower electrode, a light emitting layer disposed on the lower electrode and an upper electrode disposed on the light emitting layer. The first light blocking structure has an effective pinhole. The image sensor structure includes an effective image sensor overlapping the effective pinhole. The lower electrode does not overlap the effective pinhole. The electroluminescent device has a good fingerprint recognition function.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2019-0086097 filed on July 17, 2019, in the Korean Intellectual Property Office, the contents of which are incorporated herein by reference in their entirety. Technical Field

[0003] Various embodiments of the present disclosure relate to electroluminescent devices. More particularly, embodiments of the present disclosure relate to electroluminescent devices including fingerprint sensors. Background Art

[0004] The electroluminescent device has a fast response speed and high luminous efficiency, brightness, and field of view by using a self-emitting light emitting diode. Recently, as electroluminescent devices such as smart phones and tablet PCs are used in various ways, biometric information authentication methods using a user's fingerprint, etc. have been widely used. In order to provide a fingerprint sensing function, the electroluminescent device is provided with a fingerprint sensor so that the fingerprint sensor is installed in the electroluminescent device or installed to the electroluminescent device.

[0005] For example, the fingerprint sensor may be configured as a light sensing type sensor. The light sensing fingerprint sensor includes a light source, a lens, and an optical sensor array. If the fingerprint sensor is attached to a light emitting panel, the thickness of the electroluminescent device may increase, and the production cost of the electroluminescent device may increase. Summary of the invention

[0006] Various embodiments of the present disclosure are directed to an electroluminescent device that is thinner than previous devices while having improved reliability.

[0007] An embodiment of the present disclosure provides an electroluminescent device, which includes a first insulating layer, an electroluminescent structure, a first light blocking structure and an image sensor structure, wherein: the electroluminescent structure includes a lower electrode arranged on the first insulating layer, a light-emitting layer arranged on the lower electrode and an upper electrode arranged on the light-emitting layer, the first light blocking structure is arranged below the first insulating layer and includes a first effective pinhole, the image sensor structure is arranged below the first light blocking structure and includes an effective image sensor overlapping with the first effective pinhole, wherein the lower electrode does not overlap with the first effective pinhole.

[0008] In an embodiment, the first light blocking structure further includes first dummy pinholes, wherein the first dummy pinholes are located between the first effective pinholes, and the first effective pinholes and the first dummy pinholes form a single grid arrangement in a plan view.

[0009] In an embodiment, the electroluminescent device also includes a second light blocking structure, which is arranged between the first light blocking structure and the image sensor structure and includes a second light blocking area and a second effective pinhole, wherein the second light blocking area does not overlap with the first effective pinhole and blocks light passing through the first dummy pinhole, and the second effective pinhole overlaps with the first effective pinhole.

[0010] In an embodiment, the electroluminescent device further comprises a second light blocking structure, the second light blocking structure being disposed between the first light blocking structure and the image sensor structure and comprising a second light blocking area and a second effective pinhole, wherein the second light blocking area does not overlap with the first effective pinhole, and the second effective pinhole overlaps with the first effective pinhole.

[0011] In an embodiment, the second light blocking area comprises an additional pinhole.

[0012] In an embodiment, the electroluminescent device further comprises a light blocking member disposed above or below the additional pinhole and overlapping the additional pinhole.

[0013] In an embodiment, the additional pinhole is smaller than the second effective pinhole.

[0014] In an embodiment, the shortest planar distance from the optical center of the first effective pinhole to the lower electrode is greater than the planar distance measured from the optical center of the first effective pinhole to the inner wall of the first effective pinhole in a first direction in which the shortest planar distance from the optical center of the first effective pinhole to the lower electrode is measured.

[0015] In an embodiment, the lower electrodes include a single first lower electrode closest to the optical center of the first effective pinhole in plan view and a single second lower electrode second closest to the optical center of the first effective pinhole in plan view.

[0016] In an embodiment, the shortest planar distance from the optical center of the first effective pinhole to the single second lower electrode is measured in the second direction, and the angle between the first direction and the second direction is not k×180°, where k is an integer other than zero.

[0017] In an embodiment, the lower electrodes include a single first lower electrode closest to the optical center of the first effective pinhole in plan view and at least two second lower electrodes next closest to the optical center of the first effective pinhole in plan view.

[0018] In an embodiment, the lower electrode includes at least two first lower electrodes that are closest to the optical center of the first effective pinhole in plan view.

[0019] In an embodiment, the electroluminescent device further includes a pixel defining layer disposed on the first insulating layer and covering an edge of the lower electrode, and a spacer disposed on the pixel defining layer to be higher than the pixel defining layer, wherein the shortest planar distance from the optical center of the first effective pinhole to the spacer is greater than the shortest planar distance from the optical center of the first effective pinhole to the lower electrode.

[0020] In an embodiment, the electroluminescent device also includes a touch sensing structure, the touch sensing structure includes a touch sensing electrode and a bridge portion and is located above the electroluminescent structure, wherein the bridge portion electrically connects two adjacent touch sensing electrodes to each other, and the shortest planar distance from the optical center of the first effective pinhole to the bridge portion is greater than the shortest planar distance from the optical center of the first effective pinhole to the spacer portion.

[0021] In an embodiment, the electroluminescent device also includes a pixel defining layer disposed on the first insulating layer and covering an edge of the lower electrode, and a spacer disposed on the pixel defining layer and higher than the pixel defining layer, wherein the shortest plane distance from the optical center of the first effective pinhole to the spacer is greater than the plane distance measured from the optical center of the first effective pinhole to the inner wall of the first effective pinhole in a third direction of measuring the shortest plane distance from the optical center of the first effective pinhole to the spacer.

[0022] In an embodiment, the spacers include a single first spacer that is closest to the optical center of the first effective pinhole in plan view and a single second spacer that is second closest to the optical center of the first effective pinhole in plan view.

[0023] In an embodiment, the shortest planar distance from the optical center of the first effective pinhole to the single second spacer is measured in the fourth direction, and the third direction and the fourth direction form a second angle, and the second angle is not m×180°, where m is an integer other than zero.

[0024] In an embodiment, the spacers include a single first spacer closest to the optical center of the first effective pinhole in plan view and at least two second spacers next closest to the optical center of the first effective pinhole in plan view.

[0025] In an embodiment, the spacers include at least two first spacers that are closest to an optical center of the first effective pinhole in a plan view.

[0026] In an embodiment, the electroluminescent device also includes a touch sensing structure, the touch sensing structure includes a touch sensing electrode and a bridge portion and is located above the electroluminescent structure, wherein the bridge portion electrically connects two adjacent touch sensing electrodes to each other, and the shortest planar distance from the optical center of the first effective pinhole to the bridge portion is greater than the shortest planar distance from the optical center of the first effective pinhole to the spacer portion.

[0027] In an embodiment, the electroluminescent device also includes a touch sensing structure, the touch sensing structure includes a touch sensing electrode and a bridging portion and is located above the electroluminescent structure, wherein the bridging portion electrically connects two adjacent touch sensing electrodes to each other, and the shortest plane distance from the optical center of the first effective pinhole to the bridging portion is greater than the plane distance measured from the optical center of the first effective pinhole to the inner wall of the first effective pinhole in the fifth direction of measuring the shortest plane distance from the optical center of the first effective pinhole to the bridging portion.

[0028] In an embodiment, the bridge portion includes a single first bridge portion closest to the optical center of the first effective pinhole in plan view and a single second bridge portion second closest to the optical center of the first effective pinhole in plan view.

[0029] In an embodiment, the shortest planar distance from the optical center of the first effective pinhole to the single second bridge portion is measured in the sixth direction, and the fifth direction and the sixth direction form a third angle, and the third angle is n×180°, where n is an integer other than zero.

[0030] In an embodiment, the bridge portion includes a single first bridge portion closest to the optical center of the first effective pinhole in plan view and at least two second bridge portions next closest to the optical center of the first effective pinhole in plan view.

[0031] In an embodiment, the bridge portion includes at least two first bridge portions that are closest to the optical center of the first effective pinhole in a plan view.

[0032] In an embodiment, the electroluminescent device also includes a touch sensing structure, the touch sensing structure includes a bridging portion and a touch sensing electrode arranged on a layer different from the bridging portion, and the touch sensing structure is located above the electroluminescent structure, wherein the bridging portion electrically connects two adjacent touch sensing electrodes to each other, the bridging portion includes an overlapping area overlapping with the touch sensing electrode, and the shortest plane distance from the optical center of the first effective pinhole to the overlapping area is greater than the plane distance measured from the optical center of the first effective pinhole to the inner wall of the first effective pinhole in the direction of measuring the shortest plane distance from the optical center of the first effective pinhole to the overlapping area.

[0033] In an embodiment, the electroluminescent structure has an overlap region where at least two light emitting layers overlap, and the first effective pinhole overlaps the overlap region.

[0034] In an embodiment, the electroluminescent device further includes a pixel defining layer disposed on the first insulating layer and covering an edge of the lower electrode, and a spacer disposed on the pixel defining layer to be higher than the pixel defining layer, wherein the overlapping area does not overlap the spacer.

[0035] In an embodiment, the electroluminescent device further includes a pixel defining layer disposed on the first insulating layer and covering an edge of the lower electrode, and a spacer disposed on the pixel defining layer to be higher than the pixel defining layer, wherein the spacer has a curved edge located between a side surface and an upper surface of the spacer in a cross section, the spacer has a curved edge in a plan view, and the spacer overlaps with the first effective pinhole.

[0036] In an embodiment, the image sensor structure further includes dummy image sensors located between the active image sensors.

[0037] An embodiment of the present disclosure provides an electroluminescent device, which includes an electroluminescent structure, a first light blocking structure and an image sensor structure, wherein the electroluminescent structure includes a lower electrode arranged on an insulating layer, a light-emitting layer arranged on the lower electrode and an upper electrode arranged on the light-emitting layer, the first light blocking structure is located on the same layer as the lower electrode, the image sensor structure is located below the insulating layer and includes an effective image sensor, wherein the electroluminescent structure includes a light-emitting area in which the lower electrode, the light-emitting layer and the upper electrode overlap each other to emit light, and the first light blocking structure includes a first effective pinhole overlapping the effective image sensor.

[0038] In an embodiment, the first light blocking structure is integrally formed with the lower electrode.

[0039] In an embodiment, the first light blocking structure is not electrically coupled to the lower electrode, the first light blocking structure has an island shape not surrounding the lower electrode, and the first light blocking structure is provided in plural.

[0040] In an implementation, the first light blocking structure is electrically coupled to the upper electrode.

[0041] In an embodiment, the first light blocking structure is not electrically coupled to the lower electrode, the first light blocking structure has a mesh shape having holes, and the holes surround the lower electrode.

[0042] In an implementation, the first light blocking structure is electrically coupled to the upper electrode.

[0043] In an embodiment, the electroluminescent device further comprises a second light blocking structure located between the first light blocking structure and the image sensor structure and comprising a second effective pinhole, wherein the first effective pinhole overlaps with the second effective pinhole and the first effective pinhole is smaller than the second effective pinhole.

[0044] An embodiment of the present disclosure provides an electroluminescent device, which includes an electroluminescent structure, a light blocking structure, an image sensor structure and a touch sensing structure, wherein the electroluminescent structure includes a lower electrode, a light-emitting layer arranged on the lower electrode and an upper electrode arranged on the light-emitting layer, the light blocking structure is arranged below the electroluminescent structure and includes an effective pinhole, the image sensor structure is arranged below the light blocking structure and includes an image sensor overlapping the effective pinhole, the touch sensing structure includes a touch sensing electrode and a bridge portion and is located above the electroluminescent structure, wherein the lower electrode does not overlap with the effective pinhole, the bridge portion electrically connects two adjacent touch sensing electrodes to each other, and at least one selected from the group of the touch sensing electrode and the bridge portion includes at least one opening overlapping with the effective pinhole.

[0045] In an embodiment, the electroluminescent structure includes a lower electrode, a light-emitting layer, and a light-emitting area where the upper electrode overlaps with each other to emit light, and at least one selected from the group of a touch sensing electrode and a bridge portion also includes a hole overlapping the light-emitting area, and a size of the opening is larger than a size of the hole. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] Figure 1A and Figure 1B is a plan view of an electroluminescent device according to an embodiment of the present disclosure.

[0047] Figure 2 According to the embodiments of the present disclosure Figure 1A or Figure 1B A cross-sectional view of the electroluminescent device shown in FIG.

[0048] Figure 3 According to the embodiments of the present disclosure Figure 2 A plan view of a light blocking structure.

[0049] Figure 4 According to the embodiments of the present disclosure, Figure 2 A plan view of an electroluminescent device having a light blocking structure.

[0050] FIG. 5A to FIG. 5D is a plan view of an arrangement of a pixel circuit, a pinhole, and an image sensor according to an embodiment of the present disclosure.

[0051] Figure 6 According to the embodiments of the present disclosure Figure 1A or Figure 1B A cross-sectional view of the electroluminescent device shown in FIG.

[0052] Figure 7 yes Figure 2 A plan view of the touch sensing structure shown in FIG.

[0053] Fig. 8A yes Figure 7 An enlarged plan view of portion EA1.

[0054] Figure 8B According to the embodiment of the present disclosure, Fig. 8A A cross-sectional view taken along line II'.

[0055] Figure 8C According to the embodiment of the present disclosure, Fig. 8A A cross-sectional view taken along line II'.

[0056] Fig.8D yes Fig. 8A An enlarged plan view of portion EA2.

[0057] Fig.9A According to the embodiments of the present disclosure Figure 6 A cross-sectional view of the electroluminescent device shown in FIG.

[0058] Fig. 9B yes Fig.9A An enlarged cross-sectional view of portion EA3.

[0059] Fig. 9C yes Fig.9A An enlarged cross-sectional view of portion EA4.

[0060] Fig.10 According to the embodiments of the present disclosure Figure 6 A cross-sectional view of the electroluminescent device shown in FIG.

[0061] Fig.11 According to the embodiments of the present disclosure Figure 6 A cross-sectional view of the electroluminescent device shown in FIG.

[0062] Fig.12 According to the embodiments of the present disclosure Figure 6 A cross-sectional view of the electroluminescent device shown in FIG.

[0063] Fig.13 According to the embodiments of the present disclosure Figure 6 A cross-sectional view of the electroluminescent device shown in FIG.

[0064] Fig.14 According to the embodiments of the present disclosure Figure 6 A cross-sectional view of the electroluminescent device shown in FIG.

[0065] Fig.15 According to the embodiments of the present disclosure Figure 6 A cross-sectional view of the electroluminescent device shown in FIG.

[0066] Fig.16 According to the embodiments of the present disclosure Figure 6A cross-sectional view of the electroluminescent device shown in FIG.

[0067] Fig.17 According to the embodiments of the present disclosure Figure 6 A cross-sectional view of the electroluminescent device shown in FIG.

[0068] Fig.18 According to the embodiments of the present disclosure Fig.17 A plan view of the electroluminescent device shown in FIG.

[0069] Fig.19 is a plan view of the positional relationship among an effective pinhole, a lower electrode, a spacer, and a bridge according to an embodiment of the present disclosure.

[0070] Fig. 20 is a plan view of the positional relationship among an effective pinhole, a lower electrode, a spacer, and a bridge according to an embodiment of the present disclosure.

[0071] Fig.21 According to the embodiments of the present disclosure Figure 1A or Figure 1B Circuit diagram of the pixel circuit shown in .

[0072] Fig. 22 According to the embodiments of the present disclosure Fig.21 A plan view of the pixel shown in FIG.

[0073] Fig.23 is along Fig. 22 A cross-sectional view taken along line II-II'.

[0074] Fig.24 According to the embodiments of the present disclosure Fig.21 A plan view of the pixel shown in FIG. DETAILED DESCRIPTION

[0075] As the present disclosure allows for various changes and numerous embodiments, specific embodiments will be illustrated in the drawings and described in detail in the written description.

[0076] Throughout the disclosure, the same reference numerals may refer to the same components in the various figures and embodiments of the present disclosure. The sizes of the elements in the drawings may be exaggerated for clarity of illustration.

[0077] Hereinafter, exemplary embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. The exemplary embodiments of the present disclosure are not mutually exclusive but may be used in combination.

[0078] Figure 1A and Figure 1B is a plan view of an electroluminescent device according to an embodiment of the present disclosure. More specifically, Figure 1A and Figure 1B is a plan view of an electroluminescent device having a display area in which an image sensor is positioned according to an embodiment of the present disclosure.

[0079] Reference Figure 1A and Figure 1B , the electroluminescent device 1 according to an embodiment of the present disclosure includes a display area DA and a non-display area NDA.

[0080] According to an embodiment, the electroluminescent device 1 may have various shapes. For example, the electroluminescent device 1 may have a flat rectangular shape having two pairs of parallel sides parallel to the first direction DR1 and the second direction DR2 substantially perpendicular to the first direction DR1, respectively. The electroluminescent device 1 may display visual information in an image display direction. The visual information may include text, video, photo, 3D stereoscopic image, etc.

[0081] Depending on the embodiment, the electroluminescent device 1 may be fully flexible or may be flexible only in some areas. As an example, when the electroluminescent device 1 is fully flexible, the electroluminescent device 1 is a rollable device. As another example, when only some areas of the electroluminescent device 1 are flexible, the electroluminescent device 1 is a foldable device.

[0082] According to an embodiment, the display area DA includes a pixel circuit PC. The pixel circuit PC is electrically connected to Figure 2 The electroluminescent unit ELU shown in . Fig.21 An electroluminescent unit ELU and a pixel circuit PC are shown in FIG.

[0083] According to an embodiment, the non-display area NDA is located on at least one side of the display area DA. For example, the non-display area NDA surrounds the display area DA. For example, the non-display area NDA is an area of ​​the electroluminescent device 1 other than the display area DA. Peripheral wiring, peripheral circuits, pads, dummy pixels, etc. are located in the non-display area NDA.

[0084] According to an embodiment, at least one area of ​​the display area DA is a sensing area SA capable of sensing a user's fingerprint or the like. As an example, Figure 1A As shown in , only some of the display area DA are sensing areas SA. As another example, Figure 1B As shown in FIG. 1 , the entire display area DA is the sensing area SA. The non-display area NDA surrounding the display area DA is the non-sensing area NSA. At least one image sensor 160 a (hereinafter, also referred to as an effective image sensor 160 a ) is located in the sensing area SA.

[0085] According to an embodiment, the electroluminescent device 1 has Figure 2The first surface 1a shown in FIG. 1 on which an image is displayed and Figure 2 The second surface 1b shown in FIG. 1 is opposite to the first surface 1a, and the image sensor 160a is closer to the second surface 1b than the first surface 1a. The electroluminescent unit ELU connected to the pixel circuit PC located in or adjacent to the sensing area SA is used as a light source for fingerprint sensing of the image sensor 160a. More specifically, as shown in FIG. Figure 2 As shown in FIG. 1 , the light EL emitted from the electroluminescent unit ELU is reflected by the user's finger to change into Figure 2 , and the image sensor 160a senses the reflected light RL. Therefore, both the electroluminescent unit ELU and the image sensor 160a are located in the sensing area SA. Since the electroluminescent device 1 does not use an external light source but uses the electroluminescent unit ELU as a light source, the thickness of the electroluminescent device 1 can be reduced, and its manufacturing cost can be reduced. However, the embodiments of the present disclosure may use a separate external light source to sense fingerprints without being limited to the above configuration.

[0086] According to an embodiment, in addition to sensing a fingerprint, the image sensor 160a may also perform various functions such as the functions of a touch sensor, a scanner, a camera, etc.

[0087] Figure 2 According to the embodiments of the present disclosure Figure 1A or Figure 1B A cross-sectional view of the electroluminescent device shown in FIG. Figure 3 According to the embodiments of the present disclosure Figure 2 A plan view of a light blocking structure. Figure 4 According to the embodiments of the present disclosure, Figure 2 A plan view of an electroluminescent device having a light blocking structure.

[0088] Reference Figures 1A to 4 According to an embodiment, the electroluminescent device 1 includes an electroluminescent panel 100 having an image sensor structure 160. The electroluminescent device 1 includes a touch sensing structure 200 located on the electroluminescent panel 100 and a window 300 located on the touch sensing structure 200.

[0089] According to an embodiment, the electroluminescent panel 100 displays an image. The electroluminescent panel 100 uses current as a driving power source. The electroluminescent panel 100 may be an organic electroluminescent panel or an inorganic electroluminescent panel. Alternatively, the electroluminescent device 1 may use a light-emitting panel using voltage as a driving power source instead of the electroluminescent panel 100. The light-emitting panel may be a liquid crystal panel, an electrophoretic panel, or an electrowetting panel.

[0090] According to an embodiment, the electroluminescent panel 100 includes a light emitting module 100 a , an image sensor structure 160 , and a protective layer 170 .

[0091] According to an embodiment, the light emitting module 100 a includes a transparent layer 110 , a light blocking structure 120 , a pixel circuit structure 130 , an electroluminescent structure 140 , and an encapsulation structure 150 .

[0092] According to an embodiment, the transparent layer 110 may include glass, tempered glass, transparent plastic, etc., and may be rigid or flexible. For example, the transparent layer 110 is a substrate. Here, the expression "the transparent layer 110 is a substrate" means that a stacking process is performed on the transparent layer 110 when the transparent layer 110 is located at the lowermost position, or after the stacking process is performed on the transparent layer 110, a structure located below the transparent layer 110 is separated from the transparent layer 110 so that the transparent layer 110 is located at the lowermost position.

[0093] According to an embodiment, the pixel circuit structure 130 is located above the transparent layer 110. The pixel circuit structure 130 includes at least one conductive layer and at least one insulating layer. The pixel circuit structure 130 includes a pixel circuit PC and wiring connected to the pixel circuit PC, the pixel circuit PC having a circuit element such as a transistor or a capacitor, and the wiring is such as a signal line or a power line. The pixel circuit structure 130 also includes peripheral wiring, peripheral circuits, etc. located in the non-display area NDA.

[0094] According to an embodiment, the electroluminescent structure 140 is disposed on the pixel circuit structure 130. The electroluminescent structure 140 includes an electroluminescent unit ELU connected to the pixel circuit PC of the pixel circuit structure 130 through a contact hole.

[0095] According to an embodiment, encapsulation structure 150 is disposed on electroluminescent structure 140 and covers at least display area DA of transparent layer 110. Encapsulation structure 150 includes a first inorganic layer, an organic layer on the first inorganic layer, and a second inorganic layer on the organic layer. Alternatively, encapsulation structure 150 may be a glass layer.

[0096] According to an embodiment, the light blocking structure 120 is located between the transparent layer 110 and the pixel circuit structure 130 at least in the sensing area SA. The light blocking structure 120 includes a pinhole 120a (hereinafter, also referred to as an effective pinhole 120a) and a light blocking area 120b. The light blocking area 120b includes a light blocking material capable of absorbing or reflecting light. For example, the light blocking area 120b includes an opaque metal. The pinhole 120a is a through hole. The focus F of the reflected light RL is located in the pinhole 120a.

[0097] According to an embodiment, the pinholes 120a have the same size. For example, the width of the pinholes 120a is about ten times or more the wavelength of the incident light in order to prevent diffraction of the light. Alternatively, in other embodiments, the sizes of the pinholes 120a may be different.

[0098] According to an embodiment, the pinholes 120a are spaced apart from each other at regular intervals. Figure 4 As shown in , the pinholes 120a form a grid structure. The distance between the pinholes 120a in the light blocking structure 120 is determined based on the distance between the light blocking structure 120 and the image sensor structure 160, the wavelength of the emitted light EL, and the field of view (FOV) required by the pinholes 120a. For example, 3 to 15 pixel circuits PC may be located between two adjacent pinholes 120a to sense the shape of a relatively clear fingerprint. Alternatively, in other embodiments, the distances between the pinholes 120a may not be consistent.

[0099] According to an embodiment, the plane shape of the pinhole 120a may be any one of a circle, an equilateral triangle, a square, and a regular hexagon. Alternatively, in other embodiments, the pinhole 120a may have a plane shape other than a circle, an equilateral triangle, a square, or a regular hexagon. The density of the pinholes 120a is uniform throughout the sensing area SA. Alternatively, in other embodiments, the density of the pinholes 120a is non-uniform, such that the density of the pinholes 120a is high in a first area of ​​the sensing area SA and low in a second area different from the first area.

[0100] According to an embodiment, the light blocking structure 120 selectively transmits the reflected light RL reflected by the fingerprint of the user contacting the first surface 1a of the electroluminescent device 1. Some of the reflected light RL incident on the light blocking structure 120 is blocked by the light blocking area 120b, and the remaining reflected light RL passes through the pinhole 120a to reach the image sensor structure 160 located below the light blocking structure 120.

[0101] According to an embodiment, in a plan view, the light blocking structure 120 has an area greater than or equal to the sensing area SA, so that the outline of the sensing area SA does not extend from the outline of the light blocking structure 120. As an example, when the sensing area SA is the entire display area DA, the light blocking structure 120 has an area greater than or equal to the area of ​​the display area DA. As another example, when the sensing area SA is a part of the display area DA, the light blocking structure 120 has an area equal to or greater than the sensing area SA and equal to or smaller than the display area DA, or has the same area as the sensing area SA.

[0102] According to an embodiment, the image sensor structure 160 is located below the transparent layer 110 and overlaps at least one area of ​​the light emitting module 100a. For example, the image sensor structure 160 is attached to the lower portion of the transparent layer 110. The image sensor structure 160 overlaps at least the sensing area SA. The image sensor structure 160 includes image sensors 160a spaced a predetermined distance apart to have a predetermined density.

[0103] According to an embodiment, the image sensor 160a receives the reflected light RL passing through the pinhole 120a and generates image data corresponding to the reflected light RL. The image data includes information about the valleys and ridges of the user's fingerprint, and the information is converted into a preliminary image. The reverse image is obtained by inverting the preliminary image relative to the optical center of the preliminary image. A single fingerprint image is obtained by combining the reverse images obtained from the image sensor 160a in a plan view. Here, the optical center of the preliminary image is the point where the preliminary image intersects a vertical line passing through the focus F.

[0104] According to an embodiment, protection layer 170 is located below image sensor structure 160. Protection layer 170 is attached to the lower surface of image sensor structure 160 through an adhesive layer.

[0105] According to an embodiment, the touch sensing structure 200 and the window 300 are located above the electroluminescent panel 100 .

[0106] According to an embodiment, the touch sensing structure 200 is located on the upper surface of the electroluminescent panel 100 and senses a touch of a user's finger.

[0107] According to an embodiment, the window 300 is located on the touch sensing structure 200. The window 300 protects the electroluminescent panel 100 from external impact. The window 300 may be flexible. In this case, the window 300 contains a colorless transparent plastic material, or the window 300 is a transparent glass layer having a thickness of about 25 μm to 150 μm. Alternatively, the window 300 may be rigid. In this case, the window 300 is a transparent glass layer having a thickness greater than 150 μm.

[0108] According to an embodiment, security disabling by fingerprint recognition includes at least first to seventh steps.

[0109] First, according to an embodiment, when it is determined by the touch sensing structure 200 that the user's finger has come into contact with the window 300, a first step is performed to determine whether to recognize a fingerprint.

[0110] As an example, if the contact lasts for a predetermined period of time, such as 0.5 seconds or longer, it can be determined that the contact is for fingerprint recognition. As another example, if the contact area is at least two or more fingers, such as by double-clicking with two fingers, it can be determined that the contact is for fingerprint recognition.

[0111] According to an embodiment, when it is determined at the first step that the contact is for identifying a fingerprint, the second step is performed to turn on at least one electroluminescent unit ELU corresponding to the contact area and emit light to the user's finger.

[0112] As an example, a plurality of electroluminescent units ELU located in the contact area are turned on to form a surface light source. More specifically, at least some of the electroluminescent units ELU located in the contact area emit light simultaneously.

[0113] As another example, a plurality of electroluminescent units ELU located in the contact area are turned on to form a linear light source. As an example, at least some of the electroluminescent units ELU located in the contact area emit light in sequence in a scanning manner. In this case, a linear light beam is emitted to form a straight line or a curve. In one example, the linear light beam scans the contact area from one side of the contact area to the other side of the contact area. In another example, the linear light beam scans the contact area from the center of the contact area to its edge. In yet another example, the linear light beam may scan the contact area from the edge of the contact area to its center.

[0114] As another example, only those electroluminescent units ELU in the contact area emit light of a specific color, such as blue with a short wavelength.

[0115] According to an embodiment, the third step is for at least one image sensor 160a to receive the reflected light RL from the user's finger. At the third step, the reflected light RL passes through the pinhole 120a and is incident on the image sensor 160a.

[0116] Subsequently, according to an embodiment, a fourth step is performed to obtain a preliminary image from the image data obtained from the image sensor 160a. More specifically, the image sensor 160a receives the reflected light RL passing through the pinhole 120a and generates image data corresponding to the reflected light RL. The image data has information about the valleys and ridges of the fingerprint of the user's finger and is converted into a preliminary image.

[0117] Next, a fifth step is performed to obtain a reverse image from the preliminary image. More specifically, the reverse image is obtained by inverting the preliminary image with respect to the optical center of the preliminary image.

[0118] Subsequently, according to an embodiment, a sixth step is performed to obtain a single comparative fingerprint image by combining the inverted images obtained from the image sensor 160 a together in a plan view.

[0119] Next, according to an embodiment, a seventh step is performed to compare the previously stored reference fingerprint image with the comparison fingerprint image and thereby determine whether they match each other. When the reference fingerprint image is identical to the comparison fingerprint image, i.e., the reference fingerprint image matches the comparison fingerprint image, security may be disabled. Conversely, if the reference fingerprint image is different from the comparison fingerprint image, i.e., does not match the comparison fingerprint image, security is not disabled.

[0120] According to an embodiment, the electroluminescent device 1 enhances the touch input of the touch sensing structure 200 through image sensing of the image sensor 160a. As an example, by simultaneously using a first sensing signal sensed in a contact area by the touch sensing structure 200 and a second sensing signal sensed from the image sensor 160a, more accurate contact information such as the position of the contact area can be obtained. Alternatively, if the image sensor 160a has a relatively high sensitivity, contact information such as the position of the contact area can be obtained without the touch sensing structure 200. In addition, if the image sensor 160a has a relatively high sensitivity, the image sensor 160a can be used as a camera for photographing an object far away from the electroluminescent device 1.

[0121] FIG. 5A to FIG. 5D is a plan view of the arrangement of a pixel circuit, a pinhole, and an image sensor according to an embodiment of the present disclosure. More specifically, FIG. 5A to FIG. 5D It is shown that the Figure 1A and Figure 1B 1 is a plan view of the relative sizes, resolutions and / or arrangements of the pixel circuit PC, the pinhole 120a and the image sensor 160a in the sensing area SA of the display area DA shown in FIG.

[0122] Reference Figure 5A According to an embodiment, the sensing area SA includes pinholes 120a and image sensors 160a, the number of pinholes 120a is less than the number of pixel circuits PC, and the number of image sensors 160a is less than the number of pixel circuits PC. For example, the pinholes 120a and the image sensors 160a are smaller in size than the pixel circuits PC, and in the sensing area SA, the distribution density of the pinholes 120a and the image sensors 160a is less than the distribution density of the pixel circuits PC. Alternatively, the density of the pinholes 120a and the image sensors 160a is not less than the density of the pixel circuits PC.

[0123] According to an embodiment, the number and interval of the pinholes 120a distributed in the sensing area SA are the same as the number and interval of the image sensors 160a distributed in the sensing area SA, so that there is a one-to-one correspondence between the pinholes 120a and the image sensors 160a. In this case, the pinholes 120a and the image sensors 160a overlap each other.

[0124] According to an embodiment, the pinhole 120a and the image sensor 160a have the same size. As an alternative, the pinhole 120a is larger than the image sensor 160a. As another alternative, the pinhole 120a is smaller than the image sensor 160a.

[0125] Reference Figure 5B According to an embodiment, the sensing area SA has fewer pinholes 120a than the pixel circuit PC, but the sensing area SA has more image sensors 160a than the pixel circuit PC. The sizes of the pinholes 120a and the image sensors 160a are smaller than the pixel circuit PC. The pinholes 120a have a lower distribution density in the sensing area SA than the pixel circuit PC, and the image sensors 160a are compactly distributed in the sensing area SA with a higher density than the pixel circuit PC.

[0126] According to an embodiment, some of the image sensors 160a overlap the pinholes 120a and / or the pixel circuits PC. Alternatively, some of the image sensors 160a overlap the pinholes 120a and / or the pixel circuits PC, while other image sensors 160a are located in gaps between the pixel circuits PC.

[0127] Reference Figure 5C and Figure 5D According to an embodiment, the image sensors 160a distributed in the sensing area SA have a ratio Figure 5B The image sensors 160a shown in the figure are smaller in size and higher in density. For example, the image sensors 160a in the sensing area SA are spaced apart at a spacing that is approximately 1 / 10 to 1 / 100 times smaller than the spacing of the pinholes 120a. In this case, the image sensors 160a can be compactly distributed in the sensing area SA, so that there is no longer a one-to-one correspondence between the image sensors 160a and the pixel circuits PC and / or the pinholes 120a. Therefore, regardless of the arrangement of the image sensors 160a relative to the pixel circuits PC and / or the pinholes 120a, the moiré phenomenon can be prevented or minimized.

[0128] According to an embodiment, the distribution density of the pinholes 120a in the sensing area SA is equal to or different from the distribution density of the pixel circuits PC. Figure 5C As shown in , the distribution density of the pinholes 120a in the sensing area SA is the same as the distribution density of the pixel circuits PC. As another example, Figure 5D As shown in , the distribution density of the pinholes 120a in the sensing area SA is lower than the distribution density of the pixel circuits PC.

[0129] like FIG. 5A to FIG. 5DAs shown in , according to an embodiment, the pinholes 120a and the image sensors 160a are regularly arranged in the sensing area SA. Alternatively, in other embodiments, the pinholes 120a and / or the image sensors 160a may be irregularly distributed in the sensing area SA, or may have different densities in different areas of the sensing area SA.

[0130] Figure 6 According to the embodiments of the present disclosure Figure 1A or Figure 1B The cross-sectional view of the electroluminescent device shown in FIG. Figure 2 The components of the electroluminescent device described in the description are the same as or similar to the components described in the description.

[0131] Reference Figure 6 According to an embodiment, the pixel circuit structure 130 is used as a first light blocking structure 130 to selectively block or transmit the reflected light RL reflected by the user's fingerprint. The first light blocking structure 130 includes a pinhole 130a (hereinafter, also referred to as an effective pinhole 130a).

[0132] According to an embodiment, the second light blocking structure 120 is located between the first light blocking structure 130 and the transparent layer 110. The first light blocking structure 130 has a plurality of pinholes 130a. The pinholes 130a of the first light blocking structure 130 overlap with the pinholes 120a of the second light blocking structure 120.

[0133] According to an embodiment, the pinhole 130a of the first light blocking structure 130 has the same size as the pinhole 120a of the second light blocking structure 120. Alternatively, in other embodiments, the pinhole 130a of the first light blocking structure 130 is different in size from the pinhole 120a of the second light blocking structure 120.

[0134] As an example, Figure 6 As shown in , the pinhole 130a of the first light blocking structure 130 has a smaller width than the pinhole 120a of the second light blocking structure 120. More specifically, the pinhole 130a of the first light blocking structure 130 and the pinhole 120a of the second light blocking structure 120 have a first width and a second width in the range of 5 μm to 20 μm, respectively, wherein the second width is greater than the first width. In this case, the focus F is located at the pinhole 130a of the first light blocking structure 130.

[0135] As another example, the pinhole 130a of the first light blocking structure 130 has a greater width than the pinhole 120a of the second light blocking structure 120. More specifically, the pinhole 130a of the first light blocking structure 130 and the pinhole 120a of the second light blocking structure 120 have a first width and a second width in the range of 5 μm to 20 μm, respectively, wherein the second width is smaller than the first width. In this case, the focus F is located at the pinhole 120a of the second light blocking structure 120.

[0136] Figure 7 yes Figure 2 A plan view of the touch sensing structure shown in FIG. Fig. 8A yes Figure 7 An enlarged plan view of portion EA1. Figure 8B According to the embodiment of the present disclosure, Fig. 8A A cross-sectional view taken along line II'. Figure 8C According to the embodiment of the present disclosure, Fig. 8A A cross-sectional view taken along line II'. Fig.8D yes Fig. 8A An enlarged plan view of portion EA2.

[0137] Reference FIG. 1A to FIG. 8D According to an embodiment, the touch sensing structure 200 is located above the electroluminescent panel 100. In addition, an intermediate insulating layer may be located between the encapsulation structure 150 and the touch sensing structure 200.

[0138] According to an embodiment, the touch sensing structure 200 includes a sensing area SA and a non-sensing area NSA surrounding at least a portion of the sensing area SA. The sensing area SA of the touch sensing structure 200 overlaps the display area DA of the electroluminescent panel 100.

[0139] According to an embodiment, the touch sensing structure 200 includes: a sensing electrode 220a, including a first sensing electrode 220a_1 and a second sensing electrode 220a_2; and a bridge portion 240a, including a first bridge portion 240a_1 and a second bridge portion 240a_2. The sensing electrode 220a and the bridge portion 240a are located in a sensing area SA of the touch sensing structure 200. The first sensing electrode 220a_1 and the first bridge portion 240a_1 are alternately connected in a first direction DR1, and the second sensing electrode 220a_2 and the second bridge portion 240a_2 are alternately connected in a second direction DR2. The first bridge portion 240a_1 and the second bridge portion 240a_2 intersect in a plan view. The touch sensing structure 200 also includes a first insulating layer 230 and a second insulating layer 250, and the structures of the first insulating layer 230 and the second insulating layer 250 will be referred to below. Figure 8B and Figure 8C Give a description.

[0140] According to an embodiment, the first bridge portion 240a_1 extends in the first direction DR1 and connects two adjacent first sensing electrodes 220a_1 to each other. Alternatively, the first bridge portion 240a_1 extends in the third direction DR3 and connects two adjacent first sensing electrodes 220a_1 in the first direction DR1 to each other. In addition, the first bridge portion 240a_1 extends in the fourth direction DR4 and connects two adjacent first sensing electrodes 220a_1 in the first direction DR1 to each other. In addition, the first portion of the first bridge portion 240a_1 extends in the third direction DR3, and the second portion connected to the first portion extends in the fourth direction DR4 and connects two adjacent first sensing electrodes 220a_1 in the first direction DR1 to each other.

[0141] According to an embodiment, the second bridge portion 240a_2 extends in the second direction DR2 and connects two adjacent second sensing electrodes 220a_2 in the second direction DR2 to each other. Alternatively, the second bridge portion 240a_2 extends in the third direction DR3 and connects two adjacent second sensing electrodes 220a_2 in the second direction DR2 to each other. Alternatively, the second bridge portion 240a_2 extends in the fourth direction DR4 and connects two adjacent second sensing electrodes 220a_2 in the second direction DR2 to each other. In addition, a first portion of the second bridge portion 240a_2 extends in the third direction DR3, and a second portion connected to the first portion extends in the fourth direction DR4 and connects two adjacent second sensing electrodes 220a_2 in the second direction DR2 to each other.

[0142] The first bridge 240a_1 and the first sensing electrode 220a_1 are located at different layers. Alternatively, the first bridge 240a_1 is integrated with the first sensing electrode 220a_1. The second bridge 240a_2 is integrated with the second sensing electrode 220a_2. Alternatively, the second bridge 240a_2 and the second sensing electrode 220a_2 are located at different layers.

[0143] According to an embodiment, the non-sensing area NSA of the touch sensing structure 200 overlaps the non-display area NDA of the electroluminescent panel 100. The pad area 260 including the pad 260a and the peripheral wiring 220b connecting the sensing electrode 220a and the pad 260a are located in the non-sensing area NSA of the touch sensing structure 200.

[0144] like Figure 7 As shown in FIG. 1 , according to an embodiment, the peripheral wiring 220 b includes a first peripheral wiring 220 b_1 connected to the first sensing electrode 220 a_1 and a second peripheral wiring 220 b_2 connected to the second sensing electrode 220 a_2 .

[0145] like Fig.8D As shown in FIG. 1 , according to an embodiment, the first sensing electrode 220 a_1 includes a conductive thin wire 280 and a hole H. The conductive thin wire 280 includes a first conductive thin wire 280 a and a second conductive thin wire 280 b .

[0146] As an example, the first sensing electrode 220a_1 includes a first conductive thin wire 280a extending parallel to the third direction DR3 and a second conductive thin wire 280b extending parallel to the fourth direction DR4. The first conductive thin wire 280a and the second conductive thin wire 280b are integrated with each other. Since the first sensing electrode 220a_1 includes the first conductive thin wire 280a and the second conductive thin wire 280b, the first sensing electrode 220a_1 has a mesh structure having holes H formed by the intersection of the first conductive thin wire 280a and the second conductive thin wire 280b.

[0147] According to an embodiment, the lower electrode (such as Fig.9A 143), light-emitting layer (such as Fig.9A 145) and the upper electrode (such as Fig.9A 147) are all overlapped with each other without an insulating layer interposed to substantially emit light is defined as a light emitting area. The hole H of the first sensing electrode 220a_1 overlaps the light emitting area. Therefore, even if the first sensing electrode 220a_1 includes a flexible opaque metal, it does not block the light emitted from the light emitting area. Like the first sensing electrode 220a_1, at least one of the second sensing electrode 220a_2, the first bridge 240a_1, and the second bridge 240a_2 has a mesh structure with holes H and includes a flexible opaque metal.

[0148] like Figure 8B As shown in FIG. 1 , according to an embodiment, first sensing electrode 220a_1, second sensing electrode 220a_2, and second bridge 240a_2 are disposed on package structure 150. Second sensing electrode 220a_2 is connected to second bridge 240a_2 in second direction DR2. Second sensing electrode 220a_2 is integrated with second bridge 240a_2.

[0149] According to an embodiment, a first insulating layer 230 covering the first sensing electrode 220a_1, the second sensing electrode 220a_2, and the second bridge 240a_2 is disposed on the package structure 150. The first insulating layer 230 includes a contact hole 270 exposing the first sensing electrode 220a_1.

[0150] According to an embodiment, the first bridge 240a_1 is disposed on the first insulating layer 230 and fills the contact hole 270. The first bridge 240a_1 is connected to the adjacent first sensing electrode 220a_1. The second insulating layer 250 is disposed to cover the first bridge 240a_1 on the first insulating layer 230.

[0151] According to an embodiment, the package structure 150 may be formed by performing a deposition process and an etching process directly on the package structure 150. Figure 8B The touch sensing structure 200 shown in FIG.

[0152] More specifically, according to an embodiment, a first metal layer is formed by performing a sputtering process on the package structure 150. Thereafter, the first sensing electrode 220a_1, the second sensing electrode 220a_2, and the second bridge 240a_2 are formed by performing an etching process on the first metal layer.

[0153] Subsequently, according to an embodiment, a preliminary insulating layer covering the first sensing electrode 220a_1, the second sensing electrode 220a_2, and the second bridge 240a_2 is formed by a chemical vapor deposition (CVD) process. Thereafter, a first insulating layer 230 having a contact hole 270 exposing the first sensing electrode 220a_1 is formed by performing an etching process on the preliminary insulating layer. A second metal layer is formed by performing a sputtering process on the first insulating layer 230. Subsequently, a first bridge 240a_1 connected to the first sensing electrode 220a_1 and filling the contact hole 270 is formed by performing an etching process on the second metal layer.

[0154] Alternatively, according to other embodiments, Figure 8C As shown in FIG. 1 , the first bridge portion 240 a_1 is placed on the package structure 150 . For example, the first bridge portion 240 a_1 is directly placed on the package structure 150 .

[0155] According to an embodiment, a first insulating layer 230 covering the first bridge 240a_1 is disposed on the package structure 150. The first insulating layer 230 includes a contact hole 270 exposing the first bridge 240a_1.

[0156] According to an embodiment, the first sensing electrode 220a_1 and the second bridge 240a_2 are disposed on the first insulating layer 230. The first sensing electrode 220a_1 fills the contact hole 270. The second bridge 240a_2 is disposed between adjacent first sensing electrodes 220a_1. The second insulating layer 250 is disposed on the first insulating layer 230 and covers the first sensing electrode 220a_1 and the second bridge 240a_2.

[0157] According to an embodiment, the package structure 150 may be formed by performing a deposition process and an etching process directly on the package structure 150. Figure 8C The touch sensing structure 200 shown in FIG.

[0158] More specifically, according to an embodiment, the first metal layer is formed by performing a sputtering process directly on the package structure 150. Thereafter, the first bridge portion 240a_1 is formed by performing an etching process on the first metal layer.

[0159] Subsequently, according to an embodiment, a preliminary insulating layer covering the first bridge portion 240a_1 is formed by a CVD process. Thereafter, a first insulating layer 230 having a contact hole 270 exposing the first bridge portion 240a_1 is formed by performing an etching process on the preliminary insulating layer. A second metal layer is formed by performing a sputtering process on the first insulating layer 230. Subsequently, a first sensing electrode 220a_1, a second sensing electrode 220a_2, and a second bridge portion 240a_2 are formed on the first insulating layer 230 by performing an etching process on the second metal layer. The second sensing electrode 220a_2 is connected to the second bridge portion 240a_2 in the second direction DR2. The second sensing electrode 220a_2 is integrated with the second bridge portion 240a_2.

[0160] According to an embodiment, the first sensing electrode 220 a_1 is connected to the first bridge 240 a_1 by filling the contact hole 270 .

[0161] like Fig. 8A As shown in , according to an embodiment, the touch sensing structure 200 includes a repeated arrangement of unit blocks UB, wherein each unit block UB includes portions of adjacent first sensing electrodes 220a_1 adjacent in a first direction DR1, a first bridge portion 240a_1 connecting the adjacent first sensing electrodes 220a_1, portions of adjacent second sensing electrodes 220a_2 adjacent in a second direction DR2, and a second bridge portion 240a_2 connecting the adjacent second sensing electrodes 220a_2.

[0162] Fig.9A According to the embodiments of the present disclosure Figure 6 More specifically, Fig.9A Shown is located Figure 1A and Figure 1B Five pixels in the sensing area of ​​the electroluminescent device shown in . Fig. 9B yes Fig.9A An enlarged cross-sectional view of portion EA3. Fig. 9C yes Fig.9A An enlarged cross-sectional view of portion EA4.

[0163] Reference Figures 1A to 9A and Fig. 9B According to an embodiment, the electroluminescent device 1 includes an electroluminescent panel 100 , a touch sensing structure 200 , and a window 300 .

[0164] According to an embodiment, the electroluminescent panel 100 includes a light emitting module 100a, an image sensor structure 160 and a protective layer 170. The light emitting module 100a includes a transparent layer 110, a second light blocking structure 120, an insulating layer 131, a first light blocking structure 130, an electroluminescent structure 140 and an encapsulation structure 150.

[0165] Reference Fig. 9C According to an embodiment, the touch sensing structure 200 has Figure 8B Alternatively, according to other embodiments, the touch sensing structure 200 has Figure 8C The structure described in .

[0166] According to an embodiment, the light emitting module 100a includes a pixel P. The pixel P includes a pixel circuit PC and an electroluminescent unit ELU electrically connected to the pixel circuit PC. Fig.9A As shown in , the pixel circuit PC and the electroluminescent unit ELU do not overlap each other. Alternatively, according to other embodiments, as Fig.15 and Fig.16 As shown in , at least a portion of the pixel circuit PC overlaps with at least a portion of the electroluminescent unit ELU.

[0167] Back to Fig.9A According to an embodiment, the pixel P includes a first pixel P1, a second pixel P2, and a third pixel P3. The pixel circuit PC includes a first pixel circuit PC1, a second pixel circuit PC2, and a third pixel circuit PC3.

[0168] According to an embodiment, the electroluminescent unit ELU includes a lower electrode 143, a light emitting layer 145 disposed on the lower electrode 143, and an upper electrode 147 disposed on the light emitting layer 145. The lower electrode 143 includes a first lower electrode 143a, a second lower electrode 143b, and a third lower electrode 143c. The light emitting layer 145 includes a first light emitting layer 145a, a second light emitting layer 145b, and a third light emitting layer 145c. The electroluminescent unit ELU may be defined in a region where the lower electrode 143 and the upper electrode 147 overlap each other. The electroluminescent unit ELU includes a first electroluminescent unit ELU1, a second electroluminescent unit ELU2, and a third electroluminescent unit ELU3.

[0169] More specifically, according to an embodiment, the first electroluminescent unit ELU1 includes a first lower electrode 143a, a first light emitting layer 145a disposed on the first lower electrode 143a, and an upper electrode 147 disposed on the first light emitting layer 145a. The second electroluminescent unit ELU2 includes a second lower electrode 143b, a second light emitting layer 145b disposed on the second lower electrode 143b, and an upper electrode 147 disposed on the second light emitting layer 145b. The third electroluminescent unit ELU3 includes a third lower electrode 143c, a third light emitting layer 145c disposed on the third lower electrode 143c, and an upper electrode 147 disposed on the third light emitting layer 145c.

[0170] like Fig.9A As shown in , according to an embodiment, the first electroluminescent unit ELU1 and the first pixel circuit PC1 do not overlap each other. Alternatively, in other embodiments, the first electroluminescent unit ELU1 overlaps the first pixel circuit PC1.

[0171] like Fig.9A As shown in , according to an embodiment, the second electroluminescent unit ELU2 and the second pixel circuit PC2 do not overlap each other. Alternatively, in other embodiments, the second electroluminescent unit ELU2 overlaps the second pixel circuit PC2.

[0172] like Fig.9A As shown in , according to an embodiment, the third electroluminescent unit ELU3 and the third pixel circuit PC3 do not overlap each other. Alternatively, in other embodiments, the third electroluminescent unit ELU3 overlaps the third pixel circuit PC3.

[0173] According to an embodiment, the second light blocking structure 120 includes an effective pinhole 120a and a light blocking area 120b. The second light blocking structure 120 selectively transmits the reflected light RL reflected by an object such as a user's finger on the first surface 1a of the electroluminescent device 1. Some of the reflected light RL incident on the second light blocking structure 120 is blocked by the light blocking area 120b, and at least a portion of the remaining reflected light RL passes through the effective pinhole 120a to reach the image sensor structure 160 located below the second light blocking structure 120.

[0174] According to an embodiment, the image sensor structure 160 includes an effective image sensor 160a and a dummy image sensor 160b, which are distributed at regular intervals to have a predetermined density. The effective image sensor 160a is used to sense an image on the first surface 1a, while the dummy image sensor 160b is not used to sense an image on the first surface 1a.

[0175] According to an embodiment, the effective image sensor 160a has the same structure as the dummy image sensor 160b. As an example, the upper surface of the effective image sensor 160a senses an image, and the upper surface of the dummy image sensor 160b can also sense an image. As another example, the upper and lower surfaces of the effective image sensor 160a can sense an image, and the upper and lower surfaces of the dummy image sensor 160b can also sense an image.

[0176] Alternatively, in other embodiments, the effective image sensor 160a has a structure different from that of the dummy image sensor 160b. As an example, only the upper surface of the effective image sensor 160a can sense an image, while only the lower surface of the dummy image sensor 160b can sense an image. As another example, only the upper surface of the effective image sensor 160a can sense an image, while both the upper and lower surfaces of the dummy image sensor 160b can sense an image. As another example, both the upper and lower surfaces of the effective image sensor 160a can sense an image, while only the lower surface of the dummy image sensor 160b can sense an image.

[0177] According to an embodiment, the effective image sensor 160a of the image sensor structure 160 is configured so that at least the upper surface can sense an image and output an electrical signal corresponding to the reflected light RL received by the upper surface through the effective pinhole 120a as a sensing signal. The effective image sensor 160a overlaps with the effective pinhole 120a of the second light blocking structure 120. The dummy image sensor 160b overlaps with the light blocking area 120b of the second light blocking structure 120, but does not overlap with the effective pinhole 120a of the second light blocking structure 120.

[0178] According to an embodiment, the insulating layer 131 is disposed on the second light blocking structure 120. The insulating layer 131 includes an inorganic insulator such as silicon nitride, silicon oxide, or silicon oxynitride to prevent impurities from the transparent layer 110 from penetrating into the electroluminescent unit ELU. However, in other embodiments, the insulating layer 131 includes an organic insulating material. The insulating layer 131 may have a single-layer structure or a multi-layer structure.

[0179] According to an embodiment, the first light blocking structure 130 is disposed on the insulating layer 131. The first light blocking structure 130 includes an effective pinhole 130a that helps sense an image and a dummy pinhole 130b that does not help sense an image. The first light blocking structure 130 includes at least one insulating layer and at least one conductive layer. More specifically, the first light blocking structure 130 includes: a first conductive pattern 137a and a first dummy conductive pattern 138a located on the insulating layer 131, a gate insulating layer 132 covering the first conductive pattern 137a and the first dummy conductive pattern 138a and located on the insulating layer 131, a second conductive pattern 137b and a second dummy conductive pattern 138b located on the gate insulating layer 132, a first interlayer insulating layer 133 covering the second conductive pattern 137b and the second dummy conductive pattern 138b and located on the gate insulating layer 132, and a third conductive pattern 137a and a third conductive pattern 138b located on the first interlayer insulating layer 133. Pattern 137c and a third dummy conductive pattern 138c, a second interlayer insulating layer 134 covering the third conductive pattern 137c and the third dummy conductive pattern 138c and located on the first interlayer insulating layer 133, a fourth conductive pattern 137d and a fourth dummy conductive pattern 138d located on the second interlayer insulating layer 134, a third interlayer insulating layer 135 covering the fourth conductive pattern 137d and the fourth dummy conductive pattern 138d and located on the second interlayer insulating layer 134, and a fifth conductive pattern 137e and a fifth dummy conductive pattern 138e located on the third interlayer insulating layer 135.

[0180] According to an embodiment, the first conductive pattern 137a may be Fig.23 The second conductive pattern 137b may be any one of the seventh source electrode SE7, the first drain electrode DE1, the 3bth active pattern ACT3b, the 3bth drain electrode DE3b, the 4bth drain electrode DE4b, and the 4ath drain electrode DE4a shown in FIG. Fig.23 The third conductive pattern 137c may be any one of the i+1 scan line Si+1, the i emission control line Ei, the i scan line Si, and the i-1 scan line Si-1 shown in FIG. Fig.23 The fourth conductive pattern 137d may be any one of the initialization power line IPL and the capacitor upper electrode UE shown in FIG. Fig.23 The fifth conductive pattern 137e may be any one of the pixel power line PL, the first connection line CNL1 and the second connection line CNL2 shown in FIG. Fig.23 The connection pattern shown in CNP.

[0181] According to an embodiment, the first dummy conductive pattern 138a may be Fig.23Any one of the seventh source electrode SE7, the first drain electrode DE1, the 3b-th active pattern ACT3b, the 3b-th drain electrode DE3b, the 4b-th drain electrode DE4b, and the 4a-th drain electrode DE4a shown in FIG. The second dummy conductive pattern 138b may be Fig.23 Any one of the i+1th scan line Si+1, the i-th emission control line Ei, the i-th scan line Si, and the i-1th scan line Si-1 shown in FIG. The third dummy conductive pattern 138c may be Fig.23 The fourth dummy conductive pattern 138d may be any one of the initialization power line IPL and the capacitor upper electrode UE shown in FIG. Fig.23 Any one of the first connection line CNL1, the second connection line CNL2, and the pixel power line PL shown in FIG. The fifth dummy conductive pattern 138e may be Fig.23 The connection pattern shown in CNP.

[0182] According to an embodiment, at least two of the first conductive pattern 137a, the second conductive pattern 137b, the third conductive pattern 137c, the fourth conductive pattern 137d, and the fifth conductive pattern 137e define, in a plan view, an effective pinhole 130a of the first light blocking structure 130. The effective pinhole 130a of the first light blocking structure 130 overlaps with the effective pinhole 120a of the second light blocking structure 120.

[0183] According to an embodiment, at least two of the first dummy conductive pattern 138a, the second dummy conductive pattern 138b, the third dummy conductive pattern 138c, the fourth dummy conductive pattern 138d, and the fifth dummy conductive pattern 138e define, in a plan view, a dummy pinhole 130b of the first light blocking structure 130. The dummy pinhole 130b of the first light blocking structure 130 overlaps with the light blocking region 120b of the second light blocking structure 120, but does not overlap with the effective pinhole 120a of the second light blocking structure 120.

[0184] According to an embodiment, the effective pinholes 130a of the first light blocking structure 130 may form a lattice arrangement in a plan view. In addition, the effective pinholes 130a and the dummy pinholes 130b of the first light blocking structure 130 may form a single lattice arrangement in a plan view.

[0185] According to an embodiment, at least some of the reflected light RL propagates to an area between the effective pinholes 130a of the first light blocking structure 130, an area between the dummy pinholes 130b of the first light blocking structure 130, and an area between the effective pinholes 130a and the dummy pinholes 130b of the first light blocking structure 130. However, at least some of the reflected light RL is blocked by the light blocking area 120b of the second light blocking structure 120.

[0186] According to an embodiment, the fifth interlayer insulating layer 136 is disposed on the third interlayer insulating layer 135 and covers the fifth conductive pattern 137 e and the fifth dummy conductive pattern 138 e .

[0187] According to an embodiment, the electroluminescent structure 140 includes first, second, and third electroluminescent units ELU1, ELU2, and ELU3, and is disposed on the fifth interlayer insulating layer 136.

[0188] According to an embodiment, the lower electrode 143 is disposed on the fifth interlayer insulating layer 136. The lower electrode 143 is a reflective individual electrode, and the upper electrode 147 is a transparent or semi-transparent common electrode. Alternatively, in other embodiments, the lower electrode 143 is a transparent or semi-transparent individual electrode, and the upper electrode 147 is a reflective common electrode.

[0189] According to an embodiment, two adjacent lower electrodes 143 are spaced apart from each other by a third distance I_3. Fig.9A As shown in FIG. 1 , the first lower electrode 143 a and the second lower electrode 143 b are spaced apart from each other by a third distance I_3 .

[0190] According to an embodiment, the effective pinhole 130a of the first light blocking structure 130 is located in the second pixel circuit PC2 and does not overlap the lower electrode 143. More specifically, the effective pinhole 130a of the first light blocking structure 130 does not overlap the second lower electrode 143b of the second electroluminescent unit ELU2.

[0191] According to an embodiment, the dummy pinhole 130b of the first light blocking structure 130 is located in the third pixel circuit PC3 and does not overlap with the lower electrode 143. More specifically, the dummy pinhole 130b of the first light blocking structure 130 located in the third pixel circuit PC3 does not overlap with the first lower electrode 143a, the second lower electrode 143b, and the third lower electrode 143c respectively included in the first electroluminescent unit ELU1, the second electroluminescent unit ELU2, and the third electroluminescent unit ELU3.

[0192] Alternatively, in other embodiments, the dummy pinhole 130b of the first light blocking structure 130 overlaps the lower electrode 143. In this case, the lower electrode 143 blocks the reflected light RL incident on the dummy pinhole 130b of the first light blocking structure 130. Therefore, the image sensor structure 160 can detect a relatively clear image.

[0193] like Fig.9AAs shown in , according to an embodiment, the optical center of the effective pinhole 130a located in the second pixel circuit PC2 of the second pixel P2 is spaced apart from the first lower electrode 143a by a first distance D1 in the fifth direction DR5, and the optical center of the effective pinhole 130a located in the second pixel circuit PC2 of the second pixel P2 is spaced apart from the second lower electrode 143b by a third distance D3 in the sixth direction DR6. The first distance D1 is equal to the third distance D3. Here, the optical center of the effective pinhole 130a is a point where a vertical line passing through the focal point F intersects with a plane of a central portion of the effective pinhole 130a. If the focal point F is formed in the effective pinhole 130a, the optical center of the effective pinhole 130a becomes the focal point F.

[0194] like Fig.9A As shown in , according to an embodiment, the optical center of the effective pinhole 130a is spaced apart from the inner wall ed of the effective pinhole 130a by a second distance D2 in the fifth direction DR5, and by a fourth distance D4 in the sixth direction DR6. The second distance D2 is equal to the fourth distance D4. The second distance D2 is less than the first distance D1. The fourth distance D4 is less than the third distance D3.

[0195] According to an embodiment, the electroluminescent structure 140 includes a pixel defining layer 141 and a spacer 142. The pixel defining layer 141 is disposed on the fifth interlayer insulating layer 136 and covers the edge of the lower electrode 143. The spacer 142 is disposed on the pixel defining layer 141. The spacer 142 is higher than the pixel defining layer 141. More specifically, the upper surface of the spacer 142 is higher than the upper surface of the pixel defining layer 141. The spacer 142 includes the same material as the pixel defining layer 141 and is integrated with the pixel defining layer 141. Two adjacent spacers 142 are spaced apart from each other by a sixth distance I_6.

[0196] According to an embodiment, the electroluminescent unit ELU further includes a first functional layer 144 disposed between the lower electrode 143 and the light emitting layer 145. The first functional layer 144 is a common layer. In this case, the first functional layer 144 is located above the lower electrode 143, the pixel defining layer 141 and the spacer 142.

[0197] According to an embodiment, when the lower electrode 143 is an anode, the first functional layer 144 may be a hole injection layer (HIL), a hole transport layer (HTL), or a multi-layer structure having the HIL and the HTL on the HIL.

[0198] According to an embodiment, the light emitting layer 145 is a separate layer. The light emitting layer 145 may include an organic electroluminescent material or an inorganic electroluminescent material. The first light emitting layer 145a, the second light emitting layer 145b, and the third light emitting layer 145c emit red light, green light, and blue light, respectively. Alternatively, in other embodiments, the first light emitting layer 145a, the second light emitting layer 145b, and the third light emitting layer 145c emit magenta light, cyan light, and yellow light, respectively.

[0199] According to an embodiment, at least two adjacent layers of the first light emitting layer 145a, the second light emitting layer 145b, and the third light emitting layer 145c overlap with a portion PT of the pixel defining layer 141 where the spacer 142 is not positioned. Fig. 9B As shown in FIG. 1 , the first light emitting layer 145a and the second light emitting layer 145b overlap with a portion PT of the pixel defining layer 141 where the spacer 142 is not positioned. The overlapping region E of the first light emitting layer 145a and the second light emitting layer 145b overlaps with the effective pinhole 130a of the first light blocking structure 130. Therefore, the distance between the first electroluminescent unit ELU1, the second electroluminescent unit ELU2, and the third electroluminescent unit ELU3 is reduced to obtain a higher resolution and reduce the scattering of the reflected light RL by the spacer 142, thereby obtaining a clearer fingerprint image.

[0200] According to an embodiment, the electroluminescent unit ELU further includes a second functional layer 146 disposed between the light emitting layer 145 and the upper electrode 147. The second functional layer 146 is a common layer. When the upper electrode 147 is a cathode, the second functional layer 146 may be an electron injection layer (EIL), an electron transport layer (ETL), or a multilayer structure having an EIL and an ETL located on the EIL.

[0201] According to an embodiment, the electroluminescent unit ELU includes an upper electrode 147 disposed on the second functional layer 146. The upper electrode 147 is a cathode. The upper electrode 147 is a common electrode.

[0202] According to an embodiment, encapsulation structure 150 is disposed on and covers upper electrode 147. Encapsulation structure 150 includes a first inorganic layer, an organic layer on the first inorganic layer, and a second inorganic layer on the organic layer. Alternatively, in other embodiments, encapsulation structure 150 is a glass layer.

[0203] like Fig.9AAs shown in , according to an embodiment, the optical center of the effective pinhole 130a located in the second pixel circuit PC2 of the second pixel P2 is spaced apart from the spacer 142 by a fifth distance D5 in the fifth direction DR5, and is spaced apart from the spacer 142 by a seventh distance D7 in the sixth direction DR6. The fifth distance D5 is equal to the seventh distance D7. The fifth distance D5 is greater than the first distance D1. The seventh distance D7 is greater than the third distance D3.

[0204] According to an embodiment, when the effective pinhole 130a and the spacer 142 of the first light blocking structure 130 overlap each other, the reflected light RL is absorbed or scattered by the spacer 142 before being incident on the effective pinhole 130a, which weakens the intensity of the reflected light RL and causes the definition of the fingerprint to be reduced due to the weakened reflected light RL. Therefore, the spacer 142 is disposed on the pixel defining layer 141 without overlapping the effective pinhole 130a, so that a relatively clear fingerprint image can be obtained.

[0205] Alternatively, in other embodiments, if the spacer 142 has a rounded or curved edge when viewed in a plane, and has a curved edge between the upper surface and the side surface when viewed in a cross section, so that the spacer 142 functions as a condensing lens, the spacer 142 overlaps with the effective pinhole 130a of the first light blocking structure 130. Since the spacer 142 functions as a condensing lens, the intensity of the reflected light RL is increased, so that a clearer fingerprint image can be obtained. In addition, since no luminescent material is applied to the upper surface of the spacer 142, a clearer fingerprint image can be obtained.

[0206] According to an embodiment, the bridge portion 240a of the touch sensing structure 200 does not overlap with the effective pinhole 130a of the first light blocking structure 130. When the bridge portion 240a overlaps with the effective pinhole 130a, the reflected light RL incident on the effective pinhole 130a is absorbed or reflected by the bridge portion 240a and is weakened. The weakened reflected light RL reduces the clarity of the fingerprint. Therefore, the bridge portion 240a is set not to overlap with the effective pinhole 130a, thereby preventing the intensity of the reflected light RL incident on the effective pinhole 130a from being reduced.

[0207] According to an embodiment, two adjacent bridge portions 240a in the horizontal direction may be spaced apart from each other by a seventh distance I_7 in the fifth direction DR5. Here, the seventh distance I_7 is greater than the sixth distance I_6.

[0208] like Fig.9AAs shown in , according to an embodiment, the optical center of the effective pinhole 130a of the first light blocking structure 130 located in the second pixel circuit PC2 of the second pixel P2 is spaced apart from the bridge portion 240a adjacent to the optical center by a ninth distance D9 in the fifth direction DR5, and by an eleventh distance D11 in the sixth direction DR6. The ninth distance D9 is equal to the eleventh distance D11. The ninth distance D9 is greater than the fifth distance D5. The eleventh distance D11 is greater than the seventh distance D7.

[0209] According to an embodiment, the first light blocking structure 130 includes a dummy pinhole 130b. The dummy pinhole 130b overlaps with the light blocking region 120b of the second light blocking structure 120. The dummy pinhole 130b overlaps with the dummy image sensor 160b. The reflected light RL passing through the dummy pinhole 130b is blocked by the light blocking region 120b of the second light blocking structure 120. Therefore, the reflected light RL does not reach the dummy image sensor 160b.

[0210] According to an embodiment, the size of the dummy pinhole 130b is equal to the size of the effective pinhole 130a. In this case, since the pixel circuit PC in which the effective pinhole 130a is formed and the pixel circuit PC in which the dummy pinhole 130b is positioned are identically designed, the formation consistency between the pixel circuits PC can be increased.

[0211] Alternatively, in other embodiments, the size of the dummy pinhole 130b is larger than the size of the effective pinhole 130a. The dummy pinhole 130b serves as a passage to remove gas or impurities that may remain in the pixel circuit structure 130 after forming the pixel circuit structure 130, thereby reducing defects that may occur when the gas or impurities gather in one location. When the size of the dummy pinhole 130b is larger than the size of the effective pinhole 130a, the gas or impurities can be removed more smoothly.

[0212] In addition, according to still other embodiments, the size of the dummy pinhole 130b is smaller than the size of the effective pinhole 130a, or the dummy pinhole 130b is not formed. Some of the reflected light RL passing through the dummy pinhole 130b may propagate to the effective pinhole 120a and pass through the effective pinhole 120a. Therefore, this is detected as noise by the effective image sensor 160a. In this case, an unclear fingerprint image is obtained. Therefore, the size of the dummy pinhole 130b is smaller than the size of the effective pinhole 130a, or the dummy pinhole 130b is not formed, thereby reducing noise.

[0213] The dummy pinhole 130b may not overlap with the spacer 142 and the bridge 240a. Alternatively, according to an embodiment, the dummy pinhole 130b overlaps with at least one of the spacer 142 and the bridge 240a. In this case, the reflected light RL incident on the dummy pinhole 130b may be reduced.

[0214] According to an embodiment, the intermediate layer 180 is disposed on the image sensor structure 160. The intermediate layer 180 attaches the image sensor structure 160 to the transparent layer 110. For example, the intermediate layer 180 is an optically clear adhesive (OCA).

[0215] According to an embodiment, a predetermined voltage is applied to the light blocking region 120 b of the second light blocking structure 120 .

[0216] When the second light blocking structure 120 is in an electrically floating state, the voltage of the second light blocking structure 120 changes according to external influences, thereby electrically and unpredictably affecting transistors and capacitors in the pixel circuit PC. Therefore, according to an embodiment, the second light blocking structure 120 has a base state that is one of a predetermined positive voltage, a predetermined negative voltage, and a predetermined 0V. That is, the second light blocking structure 120 is electrically biased. In addition, when the second light blocking structure 120 has a base state, the second light blocking structure 120 is connected to at least one electrical conductor in the electroluminescent device 1 to serve as a static electricity receiving member that releases any static electricity accumulated in the electrical conductor.

[0217] According to an embodiment, a portion of the inner wall ed of the effective pinhole 130a of the first light blocking structure 130 is defined by a portion of the outer wall of the lower electrode 143. In this case, the portion of the inner wall ed of the effective pinhole 130a of the first light blocking structure 130 and the portion of the outer wall of the lower electrode 143 vertically correspond to each other. This will refer to Fig.24 Describe in detail.

[0218] Fig.10 According to the embodiments of the present disclosure Figure 6 The cross-sectional view of the electroluminescent device shown in FIG. Figures 1A to 9C Description of the components described in .

[0219] Reference Figures 1A to 10 According to an embodiment, the second light blocking structure 120 has an additional pinhole 120c, and the first light blocking structure 130 includes a light blocking member 139 (hereinafter, also referred to as a lower light blocking member 139).

[0220] According to an embodiment, the additional pinhole 120c is used as a channel for removing gas or impurities to reduce defects that may occur when gas or impurities gather in one location. In addition, the additional pinhole 120c increases the surface area of ​​the second light blocking structure 120 to increase the adhesion between the insulating layer 131 and the second light blocking structure 120.

[0221] According to an embodiment, the additional pinhole 120c has the same size as the effective pinhole 120a. When the additional pinhole 120c has the same size as the effective pinhole 120a, holes of a mask for forming the first light blocking structure 130 may be uniformly formed, which simplifies the manufacturing process.

[0222] Alternatively, in other embodiments, the size of the additional pinhole 120c is larger than the size of the effective pinhole 120a. In this case, the additional pinhole 120c can remove gas or impurities more effectively.

[0223] Alternatively, in other embodiments, the size of the additional pinhole 120c is smaller than the size of the effective pinhole 120a. When the additional pinhole 120c is smaller than the effective pinhole 120a, the intensity of the reflected light RL passing through the additional pinhole 120c is weakened. Therefore, the noise generated by the reflected light RL passing through the additional pinhole 120c can be reduced.

[0224] According to an embodiment, the additional pinhole 120c overlaps the lower electrode 143. Therefore, the lower electrode 143 reduces the intensity of the reflected light RL reflected toward the additional pinhole 120c. As an example, the additional pinhole 120c located in the first pixel P1 overlaps the first lower electrode 143a. As another example, the additional pinhole 120c located in the third pixel P3 overlaps the third lower electrode 143c.

[0225] According to an embodiment, the first light blocking structure 130 includes a light blocking member 139. The light blocking member 139 overlaps the additional pinhole 120c and the first lower electrode 143a. Therefore, the light blocking member 139 reduces the intensity of the reflected light RL reflected toward the additional pinhole 120c. Therefore, the noise generated by the reflected light RL passing through the additional pinhole 120c can be reduced.

[0226] According to an embodiment, the size of the light blocking member 139 is greater than that of the additional pinhole 120c. Therefore, the light blocking member 139 effectively reduces the intensity of the reflected light RL incident on the additional pinhole 120c.

[0227] According to an embodiment, the light blocking member 139 is disposed on at least one of a first layer on which a first conductive pattern 137a is disposed, a second layer on which a second conductive pattern 137b is disposed, a third layer on which a third conductive pattern 137c is disposed, a fourth layer on which a fourth conductive pattern 137d is disposed, and a fifth layer on which a fifth conductive pattern 137e is disposed.

[0228] As an example, according to an embodiment, the light blocking member 139 has a single-layer structure. As another example, the light blocking member 139 has a multi-layer structure including a first light blocking layer, an insulating layer on the first light blocking layer, and a second light blocking layer on the insulating layer.

[0229] like Fig.10 As shown in , according to an embodiment, the light blocking member 139 is located above the second light blocking structure 120. Alternatively, in other embodiments, the light blocking member 139 is located below the second light blocking structure 120. In this case, the light blocking member 139 is located at least between the effective image sensor 160a and the additional pinhole 120c to block the reflected light RL passing through the additional pinhole 120c from propagating toward the effective image sensor 160a.

[0230] Fig.11 According to the embodiments of the present disclosure Figure 6 The cross-sectional view of the electroluminescent device shown in FIG. Figures 1A to 10 Description of the components described in .

[0231] Reference Figures 1A to 11 According to an embodiment, the third light blocking structure 190 is located below the intermediate layer 180 and between the image sensor structure 160 and the protective layer 170 .

[0232] According to an embodiment, the third light blocking structure 190 prevents light incident on the second surface 1b of the electroluminescent device 1 from propagating toward the image sensor structure 160. The third light blocking structure 190 includes a light blocking material, which may be a reflective material or a light absorbing material.

[0233] In addition, at least one intermediate layer may be located between the third light blocking structure 190 and the image sensor structure 160. The intermediate layer includes a transparent insulating material.

[0234] Fig.12 According to the embodiments of the present disclosure Figure 6 The cross-sectional view of the electroluminescent device shown in FIG. Figures 1A to 11 Description of the components described in .

[0235] Reference Figures 1A to 12 According to an embodiment, the third light blocking structure 190 has an effective pinhole 190a and a dummy pinhole 190b. The effective pinhole 190a overlaps with the dummy image sensor 160b of the image sensor structure 160 and the spacer 142 on the pixel defining layer 141 of the electroluminescent structure 140, but does not overlap with the effective image sensor 160a.

[0236] According to an embodiment, the effective pinhole 190a is filled with a transparent insulating layer 190a_1. The transparent insulating layer 190a_1 includes an organic material.

[0237] According to an embodiment, a portion of the light incident on the second surface 1b of the electroluminescent device 1 is blocked by the third light blocking structure 190, and a portion of the remaining light reaches the dummy image sensor 160b through the effective pinhole 190a. Of the upper and lower surfaces of the dummy image sensor 160b, at least the lower surface is configured to perform a light sensing function, thereby detecting a fingerprint of a user on the second surface 1b, etc. Here, when the optical recognition sensitivity of the dummy image sensor 160b is relatively high, the dummy image sensor 160b is used as a camera for photographing an object spaced apart from the second surface 1b.

[0238] In addition, at least one intermediate layer is located between the third light blocking structure 190 and the image sensor structure 160. The intermediate layer includes a transparent insulating material. In this case, the transparent insulating layer 190a_1 is a part of the intermediate layer.

[0239] According to an embodiment, the effective pinhole 190a is the same size as the dummy image sensor 160b, or is larger in size than the dummy image sensor 160b. In this case, a reduction in the intensity of light passing through the effective pinhole 190a and incident on the dummy image sensor 160b can be prevented.

[0240] Alternatively, in other embodiments, the effective pinhole 190a is smaller in size than the dummy image sensor 160b. In this case, the intensity of noise light that passes through the effective pinhole 190a and is then sensed by the effective image sensor 160a can be reduced.

[0241] According to an embodiment, the dummy pinhole 190b of the third light blocking structure 190 is located between adjacent effective pinholes 190a. Gas or impurities remaining in the electroluminescent device 1 can be discharged from the electroluminescent device 1 through the dummy pinhole 190b of the third light blocking structure 190. In addition, the dummy pinhole 190b increases the surface area of ​​the third light blocking structure 190, which increases the adhesive force between the intermediate layer 180 and the third light blocking structure 190.

[0242] According to an embodiment, the dummy pinhole 190b does not overlap with the effective image sensor 160a. Therefore, light passing through the dummy pinhole 190b from the second surface 1b is prevented from propagating to the effective image sensor 160a and acting as noise.

[0243] Alternatively, in other embodiments, the dummy pinhole 190b overlaps the effective image sensor 160a. In this case, the lower surface of the effective image sensor 160a is configured not to sense light. Therefore, it is possible to minimize the situation where light from the second surface 1b passing through the dummy pinhole 190b propagates to the effective image sensor 160a to act as noise.

[0244] According to an embodiment, the dummy pinhole 190b of the third light blocking structure 190 is smaller in size than the effective pinhole 190a. In this case, it is possible to prevent light incident through the dummy pinhole 190b from propagating to the dummy image sensor 160b or the effective image sensor 160a and acting as noise.

[0245] In addition, a light blocking member is located between the dummy pinhole 190b and the dummy image sensor 160b, or between the dummy pinhole 190b and the effective image sensor 160a. The light blocking member prevents light passing through the dummy pinhole 190b from propagating to the dummy image sensor 160b or the effective image sensor 160a and acting as noise.

[0246] Fig.13 According to the embodiments of the present disclosure Figure 6 The cross-sectional view of the electroluminescent device shown in FIG. Figures 1A to 12 Description of the components described in .

[0247] Reference Figures 1A to 13 According to an embodiment, the sensing electrode 220a includes an opening 220c. Fig.13 As shown in , the first sensing electrode 220a_1 includes an opening 220c. The opening 220c overlaps with the effective pinhole 130a. As an example, one opening 220c vertically corresponds to the effective pinhole 130a and overlaps with the effective pinhole 130a. As another example, at least two adjacent openings 220c vertically correspond to one effective pinhole 130a and overlap with one effective pinhole 130a.

[0248] According to an embodiment, the width of the opening 220c is equal to or greater than the width RLW of the reflected light RL measured by the sensing electrode 220a. Fig.13 As shown in FIG. 1 , when the focus F is located at the effective pinhole 130a of the first light blocking structure 130, the width of the opening 220c is greater than the width of the effective pinhole 130a. Therefore, the reflected light RL can be prevented from being absorbed or reflected by the sensing electrode 220a, thereby preventing the intensity of the reflected light RL from being reduced.

[0249] According to an embodiment, when the bridge portion 240a is relatively large, the bridge portion 240a further includes an effective pinhole overlapping the effective pinhole 130a. Therefore, the reflected light RL can be prevented from being absorbed or reflected by the bridge portion 240a, thereby preventing a decrease in the intensity of the reflected light RL.

[0250] According to an embodiment, the opening 220c is larger than Fig.9A The sensing electrode 220a includes a hole H. Fig.9A The holes H and Fig.13The bridge portion 240a also includes the opening 220c shown in FIG. Fig.9A The holes H and Fig.13 Both openings 220c are shown in FIG.

[0251] Fig.14 According to the embodiments of the present disclosure Figure 6 The cross-sectional view of the electroluminescent device shown in FIG. Figures 1A to 13 Description of the components described in .

[0252] Reference Figures 1A to 14 According to an embodiment, the electroluminescent device 1 includes a fourth light blocking structure 148 between the fifth interlayer insulating layer 136 and the pixel defining layer 141. For example, the fourth light blocking structure 148 is disposed on the same layer as the lower electrode 143. The fourth light blocking structure 148 has an island shape that does not surround the lower electrode 143.

[0253] According to an embodiment, the fourth light blocking structure 148 includes at least one of an effective pinhole 148 a and a dummy pinhole 148 b .

[0254] According to an embodiment, the effective pinhole 148a of the fourth light blocking structure 148, the effective pinhole 130a of the first light blocking structure 130, the effective pinhole 120a of the second light blocking structure 120, and the effective image sensor 160a overlap each other. Therefore, the reflected light RL may sequentially pass through the effective pinhole 148a, the effective pinhole 130a, and the effective pinhole 120a to be incident on the effective image sensor 160a.

[0255] According to an embodiment, the dummy pinhole 148b of the fourth light blocking structure 148, the dummy pinhole 130b of the first light blocking structure 130, the light blocking area 120b of the second light blocking structure 120, and the dummy image sensor 160b overlap with each other. Therefore, after the reflected light RL sequentially passes through the dummy pinhole 148b and the dummy pinhole 130b, the reflected light RL may be blocked by the light blocking area 120b and is not incident on the dummy image sensor 160b.

[0256] According to an embodiment, the dummy pinhole 148b of the fourth light blocking structure 148 overlaps the spacer 142 on the pixel defining layer 141 of the electroluminescent structure 140. Therefore, after the reflected light RL is absorbed or scattered by the spacer 142 and the intensity of the reflected light RL is reduced, the reflected light RL is incident on the dummy pinhole 148b.

[0257] According to an embodiment, the dummy pinhole 148b of the fourth light blocking structure 148 has the same size as the effective pinhole 148a. In this case, holes of a mask for forming the fourth light blocking structure 148 may be uniformly formed, which simplifies the manufacturing process.

[0258] Alternatively, in other embodiments, the dummy pinhole 148b of the fourth light blocking structure 148 is larger than the effective pinhole 148a. The dummy pinhole 148b serves as a passage for removing gas or impurities remaining in the electroluminescent device 1 to reduce defects that may occur when the gas or impurities gather in one location. When the size of the dummy pinhole 130b is larger than the size of the effective pinhole 148a, the gas or impurities can be removed more effectively.

[0259] Alternatively, in still other embodiments, the dummy pinhole 148b of the fourth light blocking structure 148 is smaller than the effective pinhole 148a. After the reflected light RL passing through the dummy pinhole 148b passes through the dummy pinhole 130b, most of the reflected light RL is blocked by the second light blocking structure 120. However, some of the reflected light RL may propagate through the effective pinhole 120a of the second light blocking structure 120, thereby acting as noise. Therefore, the dummy pinhole 148b of the fourth light blocking structure 148 may be formed to be smaller than the effective pinhole 148a to reduce noise.

[0260] According to an embodiment, the fourth light blocking structure 148 is not electrically connected to the lower electrode 143. As an example, the fourth light blocking structure 148 is electrically floating. As another example, a positive voltage, a negative voltage, or a zero voltage is constantly applied to the fourth light blocking structure 148. This can prevent crosstalk from occurring due to voltage fluctuations of the fourth light blocking structure 148.

[0261] According to an embodiment, the focus of the reflected light RL is on the effective pinhole 148a of the fourth light blocking structure 148. In this case, the ninth distance I_9 is greater than the eighth distance I_8, the seventh distance I_7 is greater than the ninth distance I_9, the fourth distance I_4 is greater than the eighth distance I_8, and the fifth distance I_5 is greater than the fourth distance I_4.

[0262] According to other embodiments, the focus of the reflected light RL is on the effective pinhole 130a of the first light blocking structure 130. In this case, the eighth distance I_8 is greater than the fourth distance I_4, the ninth distance I_9 is greater than the eighth distance I_8, the seventh distance I_7 is greater than the ninth distance I_9, and the fifth distance I_5 is greater than the fourth distance I_4.

[0263] According to still other embodiments, the focus of the reflected light RL is on the effective pinhole 120a of the second light blocking structure 120. In this case, the fourth distance I_4 is greater than the fifth distance I_5, the eighth distance I_8 is greater than the fourth distance I_4, the ninth distance I_9 is greater than the eighth distance I_8, and the seventh distance I_7 is greater than the ninth distance I_9.

[0264] According to an embodiment, the upper light blocking member is located above the dummy pinhole 148b of the fourth light blocking structure 148. The upper light blocking member prevents the reflected light RL from being incident on the dummy pinhole 148b. The upper light blocking member is wider than the dummy pinhole 148b.

[0265] According to an embodiment, the lower light blocking member is located below the dummy pinhole 148b of the fourth light blocking structure 148. The lower light blocking member blocks the reflected light RL that has passed through the dummy pinhole 148b. The lower light blocking member is wider than the dummy pinhole 148b. The lower light blocking member includes at least a portion of the light blocking layer in the first light blocking structure 130.

[0266] According to an embodiment, the light blocking layer is a conductive layer. For example, the light blocking layer includes an opaque metal. Alternatively, in other embodiments, the light blocking layer is an insulating layer. For example, the light blocking layer includes a black matrix material.

[0267] If the fourth light blocking structure 148 is in an electrically floating state, the voltage of the fourth light blocking structure 148 changes according to external influences, thereby electrically and unpredictably affecting transistors and capacitors in the pixel circuit PC. Therefore, according to an embodiment, the fourth light blocking structure 148 has a base state of one of a predetermined positive voltage, a predetermined negative voltage, and a predetermined 0V. That is, the fourth light blocking structure 148 is electrically biased. The fourth light blocking structure 148 is electrically connected to the upper electrode 147.

[0268] Fig.15 According to the embodiments of the present disclosure Figure 6 The cross-sectional view of the electroluminescent device shown in FIG. Figures 1A to 14 Description of the components described in .

[0269] Reference Figures 1A to 15 According to an embodiment, the electroluminescent structure 140 includes a fourth light blocking structure 148 having at least one of an effective pinhole 148a and a dummy pinhole 148b.

[0270] According to an embodiment, the fourth light blocking structure 148 is integrated with the lower electrode 143. As an example, the fourth light blocking structure 148 with an effective pinhole 148a located in the second pixel circuit PC2 of the second pixel P2 is integrated with the second lower electrode 143b. As another example, the fourth light blocking structure 148 with a dummy pinhole 148b located in the third pixel circuit PC3 of the third pixel P3 is integrated with the third lower electrode 143c.

[0271] According to an embodiment, due to Fig.15 The effective pinhole 148a and the dummy pinhole 148b shown in FIG. Fig.14The effective pinhole 148a and the dummy pinhole 148b described in FIG. 1 are substantially the same, and thus a detailed description thereof will be omitted here.

[0272] According to an embodiment, due to Fig.15 The upper light blocking member and the lower light blocking member are the same as those already described with reference to Fig.14 The described upper light blocking member and the lower light blocking member are substantially the same, and thus a detailed description thereof will be omitted here.

[0273] According to an embodiment, due to Fig.15 The relationship between the ninth distance I_9, the fourth distance I_4, the fifth distance I_5, the eighth distance I_8 and the seventh distance I_7 shown in FIG. Fig.14 The relationship between the ninth distance I_9, the fourth distance I_4, the fifth distance I_5, the eighth distance I_8 and the seventh distance I_7 described in are substantially the same, so a description thereof will be omitted here.

[0274] Fig.16 According to the embodiments of the present disclosure Figure 6 The cross-sectional view of the electroluminescent device shown in FIG. Figures 1A to 15 Description of the components described in .

[0275] Reference Figures 1A to 16 , the electroluminescent structure 140 includes a fourth light blocking structure 148 having at least one of an effective pinhole 148a and a dummy pinhole 148b.

[0276] As an example, the fourth light blocking structure 148 with an effective pinhole 148a in the second pixel circuit PC2 of the second pixel P2 is integrated with the first lower electrode 143a. As another example, the fourth light blocking structure 148 with a dummy pinhole 148b in the third pixel circuit PC3 of the third pixel P3 is integrated with the second lower electrode 143b.

[0277] According to an embodiment, due to Fig.16 The effective pinhole 148a and the dummy pinhole 148b shown in FIG. Fig.14 The effective pinhole 148a and the dummy pinhole 148b described in FIG. 1 are substantially the same, and thus a detailed description thereof will be omitted here.

[0278] According to an embodiment, due to Fig.16 The upper light blocking member and the lower light blocking member are the same as those already described with reference to Fig.14 The described upper light blocking member and the lower light blocking member are substantially the same, and thus a detailed description thereof will be omitted here.

[0279] According to an embodiment, due to Fig.16The relationship between the ninth distance I_9, the fourth distance I_4, the fifth distance I_5, the eighth distance I_8 and the seventh distance I_7 shown in FIG. Fig.14 The relationship between the ninth distance I_9, the fourth distance I_4, the fifth distance I_5, the eighth distance I_8 and the seventh distance I_7 described in are substantially the same, so a description thereof will be omitted here.

[0280] Fig.17 According to the embodiments of the present disclosure Figure 6 A cross-sectional view of the electroluminescent device shown in FIG. Fig.18 According to the embodiments of the present disclosure Fig.17 The plan view of the electroluminescent device shown in FIG. Figures 1A to 16 Description of the components described in .

[0281] Reference Figures 1A to 18 According to an embodiment, the electroluminescent device 1 includes a fourth light blocking structure 148 and a lower light blocking member 139. The fourth light blocking structure 148 has at least one of an effective pinhole 148a and a dummy pinhole 148b.

[0282] According to an embodiment, the fourth light blocking structure 148 and the lower electrode 143 are disposed on the same layer. The fourth light blocking structure 148 and the lower electrode 143 include the same material and are formed by the same process. The fourth light blocking structure 148 is spaced apart from the lower electrode 143. The fourth light blocking structure 148 has a mesh structure surrounding the lower electrode 143 in a plan view.

[0283] According to an embodiment, the fourth light blocking structure 148 includes an opaque material that can reflect or absorb light. For example, the fourth light blocking structure 148 includes an opaque conductive material. The opaque conductive material includes metal.

[0284] According to an embodiment, the fourth light blocking structure 148 is connected to the upper electrode 147 through a contact hole CH penetrating at least the pixel defining layer 141. As an example, the contact hole CH penetrates the pixel defining layer 141. As another example, the contact hole CH penetrates the pixel defining layer 141 and the spacer 142.

[0285] According to an embodiment, when the fourth light blocking structure 148 is connected to the upper electrode 147 through the contact hole CH and connected to Fig.21 When the second pixel power source ELVSS shown in , the voltage drop of the upper electrode 147 can be reduced.

[0286] If the fourth light blocking structure 148 is in an electrically floating state without being electrically connected to the upper electrode 147, the voltage of the fourth light blocking structure 148 changes according to external influences, thereby electrically and unpredictably affecting transistors and capacitors in the pixel circuit PC. Therefore, in other embodiments, if the fourth light blocking structure 148 is not electrically connected to the upper electrode 147, the fourth light blocking structure 148 has a ground state that is one of a predetermined positive voltage, a predetermined negative voltage, and a predetermined 0 V. That is, if the fourth light blocking structure 148 is not electrically connected to the upper electrode 147, the fourth light blocking structure 148 is electrically biased.

[0287] According to an embodiment, due to Fig.17 The effective pinhole 148a and the dummy pinhole 148b shown in FIG. Fig.14 The effective pinhole 148a and the dummy pinhole 148b described in FIG. 1 are substantially the same, and thus a detailed description thereof will be omitted here.

[0288] According to an embodiment, since the upper light blocking member is Fig.14 The described upper light blocking members are substantially the same, and thus a detailed description thereof will be omitted here.

[0289] According to an embodiment, the lower light blocking member 139 is located below the dummy pinhole 148b of the fourth light blocking structure 148. The lower light blocking member 139 blocks the reflected light RL passing through the dummy pinhole 148b. The lower light blocking member 139 is wider than the dummy pinhole 148b. The lower light blocking member 139 includes at least a portion of the light blocking layer in the first light blocking structure 130. In some embodiments, the light blocking layer is a conductive layer. For example, the light blocking layer includes the same material as the fifth conductive pattern 137e and the fifth dummy conductive pattern 138e disposed on the third interlayer insulating layer 135, and is formed in the same process. Alternatively, in other embodiments, the light blocking layer is an insulating layer. For example, the light blocking layer includes a black matrix material.

[0290] According to an embodiment, due to Fig.17 The relationship between the ninth distance I_9, the fourth distance I_4, the fifth distance I_5, the eighth distance I_8 and the seventh distance I_7 shown in FIG. Fig.14 The relationship between the ninth distance I_9, the fourth distance I_4, the fifth distance I_5, the eighth distance I_8 and the seventh distance I_7 described in are substantially the same, so a description thereof will be omitted here.

[0291] Fig.19 is a plan view of the positional relationship between the effective pinhole, the lower electrode, the spacer and the bridge according to an embodiment of the present disclosure. At least one effective pinhole needs to meet the reference Fig.19conditions described, but not all effective pinholes need to meet these conditions.

[0292] refer to Figures 1A to 8C as well as Fig.19 According to an embodiment, the effective pinhole EPH has a square shape in a plane. Alternatively, in other embodiments, the effective pinhole EPH may have a rectangular, circular, elliptical or polygonal shape in a plane.

[0293] According to an embodiment, in Fig.14 Among the effective pinholes 130a of the first light blocking structure 130, the effective pinholes 120a of the second light blocking structure 120, and the effective pinholes 148a of the fourth light blocking structure 148 shown in FIG. Fig.19 The effective pinhole EPH.

[0294] According to an embodiment, in a plan view, a plurality of lower electrodes 143, a plurality of spacers 142, and a plurality of bridges 240a are located around the effective pinhole EPH. The lower electrode 143 includes a first lower electrode 143a, a second lower electrode 143b, and a third lower electrode 143c. The spacers 142 include a first spacer 142a and a second spacer 142b. The bridge 240a includes a first bridge 240a_1 and a second bridge 240a_2.

[0295] According to an embodiment, the plurality of lower electrodes 143 include a single first lower electrode 143a that is closest to a focus F formed on the effective pinhole EPH in a plan view. The shortest distance between the single first lower electrode 143a and the focus F is a first distance D1, which is the length of the first line L1. The focus F is spaced apart from the inner wall ed of the effective pinhole EPH by a second distance D2 in the extending direction of the first line L1. The first distance D1 is equal to or greater than the second distance D2. For example, the first distance D1 is greater than the second distance D2.

[0296] According to an embodiment, the plurality of lower electrodes 143 include a single second lower electrode 143b that is second closest to the focus F formed on the effective pinhole EPH in a plan view. Alternatively, in other embodiments, the plurality of lower electrodes 143 include at least two second lower electrodes 143b that are second closest to the focus F in a plan view. The shortest distance between the second lower electrode 143b and the focus F is a third distance D3, which is the length of the second line L2. The focus F is spaced apart from the inner wall ed of the effective pinhole EPH by a fourth distance D4 in the extension direction of the second line L2. The third distance D3 is equal to or greater than the fourth distance D4. For example, the third distance D3 is greater than the fourth distance D4.

[0297] According to an embodiment, the plurality of spacers 142 include a single first spacer 142a that is closest to a focus F formed on the effective pinhole EPH in a plan view. The shortest distance between the single first spacer 142a and the focus F is a fifth distance D5, which is the length of the third line L3. The focus F is spaced apart from the inner wall ed of the effective pinhole EPH by a sixth distance D6 in the extending direction of the third line L3. The fifth distance D5 is equal to or greater than the sixth distance D6. For example, the fifth distance D5 is greater than the sixth distance D6.

[0298] According to an embodiment, the plurality of spacers 142 include a single second spacer 142b that is second closest to the focus F formed on the effective pinhole EPH in a plan view. Alternatively, in other embodiments, the plurality of spacers 142 include at least two second spacers 142b that are second closest to the focus F formed on the effective pinhole EPH in a plan view. The shortest distance between the second spacer 142b and the focus F is a seventh distance D7, which is the length of the fourth line L4. The focus F is spaced apart from the inner wall ed of the effective pinhole EPH by an eighth distance D8 in the extending direction of the fourth line L4. The seventh distance D7 is equal to or greater than the eighth distance D8. For example, the seventh distance D7 is greater than the eighth distance D8.

[0299] According to an embodiment, the plurality of bridges 240a include a single first bridge 240a_1 that is closest to a focus F formed on the effective pinhole EPH in a plan view. The shortest distance between the single first bridge 240a_1 and the focus F is a ninth distance D9, which is the length of the fifth line L5. The focus F is spaced apart from the inner wall ed of the effective pinhole EPH by a tenth distance D10 in the extending direction of the fifth line L5. The ninth distance D9 is equal to or greater than the tenth distance D10. For example, the ninth distance D9 is greater than the tenth distance D10.

[0300] According to an embodiment, the first bridge portion 240a_1 has Fig. 8A The first sensing electrodes 220a_1 shown in FIG. 2 overlap the overlapped area a_1, and the light transmittance of the touch sensing structure 200 is low at the overlapped area a_1. Therefore, the fifth line L5 may be disposed between the focus F and the overlapped area a_1 of the single first bridge 240a_1 closest to the focus F in the plane.

[0301] According to an embodiment, the plurality of bridges 240a include a single second bridge 240a_2 that is second closest to the focus F formed on the effective pinhole EPH in a plan view. Alternatively, in other embodiments, the plurality of bridges 240a include at least two second bridges 240a_2 that are second closest to the focus F formed on the effective pinhole EPH in a plan view. The shortest distance between the focus F and the second bridge 240a_2 that is second closest to the focus F in a plane is the eleventh distance D11, which is the length of the sixth line L6. The focus F is spaced apart from the inner wall ed of the effective pinhole EPH by a twelfth distance D12 in the extending direction of the sixth line L6. The eleventh distance D11 is equal to or greater than the twelfth distance D12. For example, the eleventh distance D11 is greater than the twelfth distance D12.

[0302] According to an embodiment, the second bridge portion 240a_2 has Fig. 8A The second sensing electrodes 220a_2 shown in FIG. 2 overlap the overlapping area a_2, and the light transmittance of the touch sensing structure 200 is low at the overlapping area a_2. Therefore, the sixth line L6 may be disposed between the focus F and the overlapping area a_2 of the single second bridge 240a_2 that is second closest to the focus F in the plane.

[0303] According to an embodiment, the first distance D1, the third distance D3, the fifth distance D5, the seventh distance D7, the ninth distance D9, and the eleventh distance D11 are respectively equal to or greater than the second distance D2, the fourth distance D4, the sixth distance D6, the eighth distance D8, the tenth distance D10, and the twelfth distance D12. Therefore, at least a portion of the optical path along which the reflected light RL propagates is blocked to prevent the intensity of the reflected light RL from being reduced.

[0304] According to an embodiment, the third distance D3 is equal to or greater than the first distance D1. The fifth distance D5 is equal to or greater than the third distance D3. The seventh distance D7 is equal to or greater than the fifth distance D5. The ninth distance D9 is equal to or greater than the seventh distance D7. The eleventh distance D11 is equal to or greater than the ninth distance D9. Therefore, the optical path of the reflected light RL can be fully ensured. Therefore, at least a portion of the optical path of the reflected light RL can be blocked to prevent the intensity of the reflected light RL from being reduced.

[0305] According to an embodiment, the sum of the fifth distance D5 and the seventh distance D7 is equal to or greater than the sum of the first distance D1 and the third distance D3. The sum of the ninth distance D9 and the eleventh distance D11 is equal to or greater than the sum of the fifth distance D5 and the seventh distance D7. Therefore, at least a portion of the optical path along which the reflected light RL propagates may be blocked to prevent the intensity of the reflected light RL from being reduced.

[0306] According to an embodiment, the first angle θ1 between the first line L1 and the second line L2 is not "k×180°". Here, "k" is an integer other than zero. The second angle θ2 between the third line L3 and the fourth line L4 is not "m×180°". Here, "m" is an integer other than zero. The third angle θ3 between the fifth line L5 and the sixth line L6 is not "n×180°". Here, "n" is an integer other than zero. At least one of the conditions of the first angle θ1, the second angle θ2, and the third angle θ3 may be satisfied. Therefore, the formation of the effective pinhole EPH does not hinder the increase in the resolution of the electroluminescent device 1.

[0307] Fig. 20 FIG. 1 is a plan view of the positional relationship between the effective pinhole, the lower electrode, the spacer, and the bridge according to an embodiment of the present disclosure. Fig.19 At least one valid pinhole needs to satisfy the reference Fig. 20 conditions described, but not all effective pinholes need to meet the above conditions.

[0308] Reference Figures 1A to 20 According to an embodiment, the electroluminescent device 1 includes at least two lower electrodes 143 closest to the focal point F formed on the effective pinhole EPH in a plan view. The shortest distance between the focal point F and the at least two lower electrodes 143 is a thirteenth distance D13. The thirteenth distance D13 may correspond to Fig.19 The first distance D1 or the third distance D3 shown in .

[0309] According to an embodiment, the electroluminescent device 1 includes at least two spacers 142 closest to the focal point F formed on the effective pinhole EPH in a plan view. The shortest distance between the focal point F and the at least two spacers 142 is a fourteenth distance D14. The fourteenth distance D14 may correspond to Fig.19 The fifth distance D5 or the seventh distance D7 shown in .

[0310] According to an embodiment, the electroluminescent device 1 includes at least two bridge portions 240a closest to the focal point F formed on the effective pinhole EPH in a plan view. The shortest distance between the focal point F and the at least two bridge portions 240a is a fifteenth distance D15. The fifteenth distance D15 may correspond to Fig.19 The ninth distance D9 or the eleventh distance D11 shown in .

[0311] According to an embodiment, the bridge portion 240a has Fig. 8AThe sensing electrodes 220a shown in FIG. 1 overlap the overlapping area a, and the light transmittance of the touch sensing structure 200 is low at the overlapping area a. Therefore, the fifteenth distance D15 may be set between the focus F and the overlapping area a of at least two bridge portions 240a closest to the focus F.

[0312] According to an embodiment, the fourteenth distance D14 is equal to or greater than the thirteenth distance D13. The fifteenth distance D15 is equal to or greater than the fourteenth distance D14. Therefore, the optical path of the reflected light RL can be fully ensured. Therefore, the intensity reduction of the reflected light RL can be prevented. The intensity reduction of the reflected light RL may be caused by blocking at least a portion of the optical path through which the reflected light RL propagates. In addition, the distance between the focus F formed on the effective pinhole EPH and the inner wall ed of the effective pinhole EPH is a length R1.

[0313] Fig.21 According to the embodiments of the present disclosure Figure 1A or Figure 1B Circuit diagram of the pixel circuit shown in .

[0314] Reference Figure 1A , Figure 1B and Fig.21 According to an embodiment, the pixel Pij is arranged in the i-th row and the j-th column of the display area DA of the electroluminescent device 1, where "i" is a natural number and "j" is a natural number. The pixel circuit PCij of the pixel Pij is connected to the i-th scan line Si and the j-th data line Dj of the display area DA. The pixel circuit PCij is connected to the first pixel power supply ELVDD and the second pixel power supply ELVSS.

[0315] According to an embodiment, the pixel Pij comprises a pixel circuit PCij and an electroluminescent unit ELUij. The pixel circuit PCij is electrically coupled to the electroluminescent unit ELUij. An outer portion of the pixel circuit PCij substantially has a quadrilateral shape such as a square or a rectangle.

[0316] According to an embodiment, the pixel circuit PCij is also coupled to at least one different scan line. For example, the pixel circuit PCij is also coupled to at least one of the i-1th scan line Si-1 and the i+1th scan line Si+1.

[0317] According to an embodiment, the pixel circuit PCij is further coupled to a third power source in addition to the first pixel power source ELVDD and the second pixel power source ELVSS. For example, the pixel circuit PCij is further coupled to an initialization power source Vint.

[0318] According to an embodiment, the pixel circuit PCij includes a first transistor T1, a second transistor T2, a third transistor T3, a fourth transistor T4, a fifth transistor T5, a sixth transistor T6, and a seventh transistor T7 and a storage capacitor Cst.

[0319] According to an embodiment, a source electrode of the first transistor T1 is coupled to the first pixel power source ELVDD via the fifth transistor T5. A drain electrode of the first transistor T1 is coupled to the electroluminescent unit ELUij via the sixth transistor T6. A gate electrode of the first transistor T1 is coupled to the first node N1. The first transistor T1 controls a driving current flowing between the first pixel power source ELVDD and the second pixel power source ELVSS in response to a voltage of the first node N1, so that the driving current flows through the electroluminescent unit ELUij.

[0320] According to an embodiment, the second transistor T2 is coupled between the j-th data line Dj and the source electrode of the first transistor T1. The gate electrode of the second transistor T2 is coupled to the i-th scan line Si. When a scan signal of a gate-on voltage (such as a low voltage) is received from the i-th scan line Si, the second transistor T2 is turned on to electrically connect the j-th data line Dj to the source electrode of the first transistor T1. Therefore, if the second transistor T2 is turned on, the data signal received from the j-th data line Dj is transmitted to the first transistor T1.

[0321] According to an embodiment, the third transistor T3 is coupled between the drain electrode of the first transistor T1 and the first node N1. The gate electrode of the third transistor T3 is coupled to the i-th scan line Si. When receiving a scan signal of a gate-on voltage from the i-th scan line Si, the third transistor T3 is turned on to electrically connect the drain electrode of the first transistor T1 to the first node N1.

[0322] According to an embodiment, the fourth transistor T4 is coupled between the first node N1 and the initialization power line IPL on which the initialization power Vint is transmitted. The gate electrode of the fourth transistor T4 is coupled to a previous scan line, such as the i-1th scan line Si-1. When a scan signal of a gate-on voltage is received from the i-1th scan line Si-1, the fourth transistor T4 is turned on so that the voltage of the initialization power Vint flows to the first node N1. Here, the initialization power Vint has a voltage equal to or less than the minimum voltage of the data signal.

[0323] According to an embodiment, the fifth transistor T5 is coupled between the first pixel power source ELVDD and the first transistor T1. The gate electrode of the fifth transistor T5 is coupled to a corresponding emission control line, such as the i-th emission control line Ei. When an emission control signal having a gate-off voltage is received through the i-th emission control line Ei, the fifth transistor T5 is turned off, and the fifth transistor T5 may be turned on in other cases.

[0324] According to an embodiment, the sixth transistor T6 is coupled between the first transistor T1 and the electroluminescent unit ELUij. The gate electrode of the sixth transistor T6 is coupled to the i-th emission control line Ei. When the emission control signal having the gate-off voltage is supplied to the i-th emission control line Ei, the sixth transistor T6 is turned off, and the sixth transistor T6 may be turned on in other cases.

[0325] According to an embodiment, the seventh transistor T7 is connected between the electroluminescent unit ELUij and the initialization power line IPL. The gate electrode of the seventh transistor T7 is connected to any one of the scan lines of the next stage, such as the i+1th scan line Si+1. When the scan signal of the gate-on voltage is supplied to the i+1th scan line Si+1, the seventh transistor T7 is turned on, so that the voltage of the initialization power supply Vint flows to the electroluminescent unit ELUij.

[0326] According to an embodiment, the storage capacitor Cst is coupled between the first pixel power source ELVDD and the first node N1. The storage capacitor Cst stores a voltage corresponding to the data signal supplied to the first node N1 during each frame period and a threshold voltage of the first transistor T1.

[0327] According to an embodiment, the anode of the electroluminescent unit ELUij is coupled to the first transistor T1 via the sixth transistor T6, and the cathode of the electroluminescent unit ELUij is coupled to the second pixel power supply ELVSS. The electroluminescent unit ELUij emits light having a predetermined brightness corresponding to the current received from the first transistor T1. The voltage of the first pixel power supply ELVDD transmitted to the pixel power line PL is higher than the voltage of the second pixel power supply ELVSS to allow current to flow to the electroluminescent unit ELUij. During the light emission period of the pixel Pij, the potential difference between the first pixel power supply ELVDD and the second pixel power supply ELVSS is equal to or higher than the threshold voltage of the electroluminescent unit ELUij.

[0328] Fig. 22 According to the embodiments of the present disclosure Fig.21 A plan view of the pixel shown in FIG. Fig.23 is along Fig. 22 A cross-sectional view taken along line II-II'.

[0329] According to an embodiment, among the scan lines Si-1, Si and Si+1 on which scan signals are transmitted, the i-1th scan line is referred to as the "i-1th scan line Si-1", the i-th scan line is referred to as the "i-th scan line Si", and the i+1th scan line is referred to as the "i+1th scan line Si+1". The i-th row emission control line on which the emission control signal is transmitted is referred to as the "i-th emission control line Ei". The j-th column data line on which the data signal is transmitted is referred to as the "j-th data line Dj". The j-th column pixel power line on which the first pixel power source ELVDD is transmitted is referred to as the "pixel power line PL".

[0330] Reference Figures 1A to 8C as well as Figure 21 to Figure 23 According to an embodiment, the pixel Pij is disposed on the transparent layer 110. The electroluminescent device 1 includes a display area DA and a non-display area NDA. The pixel Pij is disposed in the display area DA.

[0331] According to an embodiment, the scan lines Si-1, Si and Si+1 transmit scan signals to the pixel circuit PCij. The i-th emission control line Ei transmits an emission control signal to the pixel circuit PCij. The j-th data line Dj transmits a data signal to the pixel circuit PCij. The initialization power line IPL transmits initialization power to the pixel circuit PCij. The pixel power line PL transmits a first pixel power ELVDD to the pixel circuit PCij.

[0332] According to an embodiment, the scan lines Si-1, Si, and Si+1 extend along the first direction DR1 on the transparent layer 110. The scan lines Si-1, Si, and Si+1 are sequentially arranged in the second direction DR2. Each of the scan lines Si-1, Si, and Si+1 receives a scan signal. The scan lines Si-1, Si, and Si+1 are disposed on the gate insulating layer 132.

[0333] According to an embodiment, the i-th emission control line Ei extends in the first direction DR1 on the transparent layer 110 . The i-th emission control line Ei is disposed on the gate insulating layer 132 .

[0334] According to an embodiment, the j-th data line Dj extends in a second direction DR2 crossing the first direction DR1 on the transparent layer 110 . The j-th data line Dj receives a data signal. The j-th data line Dj is disposed on the second interlayer insulating layer 134 .

[0335] According to an embodiment, the pixel power line PL extends substantially in the same direction (which is the second direction DR2 ) as the j-th data line Dj on the transparent layer 110 . The first pixel power source ELVDD is transmitted on the pixel power line PL. The pixel power line PL is disposed on the second interlayer insulating layer 134 .

[0336] According to an embodiment, the initialization power line IPL extends in the first direction DR1 on the transparent layer 110 . The initialization power source Vint is transmitted on the initialization power line IPL. The initialization power line IPL is disposed on the first interlayer insulating layer 133 .

[0337] According to an embodiment, the pixel Pij includes: an electroluminescent structure 140 including at least one electroluminescent unit ELUij; a pixel circuit structure 130 including a pixel circuit PCij driving the electroluminescent unit ELUij; and a second light blocking structure 120 located between the pixel circuit structure 130 and the transparent layer 110 .

[0338] According to an embodiment, the pixel circuit structure 130 includes an effective pinhole 130a. Therefore, the pixel circuit structure 130 serves as a first light blocking structure 130 to selectively transmit the reflected light RL reflected by the user. Hereinafter, the pixel circuit structure 130 is referred to as a first light blocking structure 130.

[0339] According to an embodiment, the second light blocking structure 120 is disposed between the electroluminescent structure 140 and the image sensor structure 160 to selectively transmit the incident reflected light RL.

[0340] According to an embodiment, the second light blocking structure 120 includes an effective pinhole 120a and a light blocking area 120b. The light blocking area 120b includes a light blocking material. For example, the light blocking area 120b includes an opaque metal.

[0341] According to an embodiment, the first light blocking structure 130 comprises a pixel circuit PCij coupled to the electroluminescent unit ELUij.

[0342] According to an embodiment, the pixel circuit PCij includes first, second, third, fourth, fifth, sixth and seventh transistors T1, T2, T3, T4, T5, T6 and T7 and a storage capacitor Cst. The pixel circuit PCij is disposed on the insulating layer 131.

[0343] According to an embodiment, the first transistor T1 includes a first gate electrode GE1, a first active pattern ACT1, a first source electrode SE1, a first drain electrode DE1, and a first connection line CNL1. The first gate electrode GE1 is coupled to a 3b drain electrode DE3b of a 3b transistor T3b and a 4b drain electrode DE4b of a 4b transistor T4b.

[0344] According to an embodiment, the second transistor T2 includes a second gate electrode GE2 , a second active pattern ACT2 , a second source electrode SE2 , and a second drain electrode DE2 .

[0345] According to an embodiment, the third transistor T3 has a dual gate structure to prevent current leakage. In other words, the third transistor T3 includes a 3a transistor T3a and a 3b transistor T3b. The 3a transistor T3a includes a 3a gate electrode GE3a, a 3a active pattern ACT3a, a 3a source electrode SE3a, and a 3a drain electrode DE3a. The 3b transistor T3b includes a 3b gate electrode GE3b, a 3b active pattern ACT3b, a 3b source electrode SE3b, and a 3b drain electrode DE3b. The other end of the 3b drain electrode DE3b is coupled to the first gate electrode GE1 through the first and second contact holes CH1 and CH2 and the first connection line CNL1.

[0346] According to an embodiment, similar to the third transistor T3, the fourth transistor T4 has a dual gate structure to prevent current leakage. In other words, the fourth transistor T4 includes a 4a transistor T4a and a 4b transistor T4b. The 4a transistor T4a includes a 4a gate electrode GE4a, a 4a active pattern ACT4a, a 4a source electrode SE4a, and a 4a drain electrode DE4a. The 4b transistor T4b includes a 4b gate electrode GE4b, a 4b active pattern ACT4b, a 4b source electrode SE4b, and a 4b drain electrode DE4b. The 4a source electrode SE4a is coupled to the auxiliary connection line AUX through the ninth contact hole CH9. The 4b drain electrode DE4b is coupled to the first gate electrode GE1 of the first transistor T1 through the first contact hole CH1 and the second contact hole CH2 and the first connection line CNL1.

[0347] According to an embodiment, the fifth transistor T5 includes a fifth gate electrode GE5, a fifth active pattern ACT5, a fifth source electrode SE5, and a fifth drain electrode DE5. The fifth source electrode SE5 is coupled to the pixel power line PL through a fifth contact hole CH5.

[0348] According to an embodiment, the sixth transistor T6 includes a sixth gate electrode GE6, a sixth active pattern ACT6, a sixth source electrode SE6, and a sixth drain electrode DE6. The sixth source electrode SE6 is coupled to the first drain electrode DE1 and the 3a source electrode SE3a. The sixth drain electrode DE6 is coupled to the second connection line CNL2 through the seventh contact hole CH7. The second connection line CNL2 is coupled to the connection pattern CNP through the tenth contact hole CH10. The connection pattern CNP is coupled to the second connection line CNL2 through the tenth contact hole CH10 penetrating the third interlayer insulating layer 135, and is coupled to the lower electrode 143 of the electroluminescent structure 140 through the eleventh contact hole CH11 penetrating the fifth interlayer insulating layer 136.

[0349] According to an embodiment, the seventh transistor T7 includes a seventh gate electrode GE7, a seventh active pattern ACT7, a seventh source electrode SE7, and a seventh drain electrode DE7. The seventh source electrode SE7 is coupled to the sixth drain electrode DE6, and the seventh drain electrode DE7 is coupled to the initialization power line IPL through the eighth contact hole CH8, and is coupled to the 4a-th source electrode SE4a of the pixel P(i+1)j corresponding to the i+1-th row scan line.

[0350] According to an embodiment, the storage capacitor Cst includes a capacitor lower electrode LE and a capacitor upper electrode UE. The capacitor lower electrode LE is integrated with the first gate electrode GE1 of the first transistor T1. The capacitor upper electrode UE overlaps with the capacitor lower electrode LE and covers the capacitor lower electrode LE when viewed from a plane. The capacitor upper electrode UE is electrically connected to the pixel power line PL through the third contact hole CH3 and the fourth contact hole CH4. The capacitor upper electrode UE includes an opening OPN corresponding to the area in which the first contact hole CH1 is formed. The first gate electrode GE1 of the first transistor T1 is coupled to the first connection line CNL1 through the first contact hole CH1.

[0351] According to an embodiment, the electroluminescent unit ELUij includes a lower electrode 143, an upper electrode 147, and a light emitting layer 145 disposed between the lower electrode 143 and the upper electrode 147. All of the lower electrode 143, the light emitting layer 145, and the upper electrode 147 overlap each other without an intervening insulating layer, so that a region that actually emits light is a light emitting region.

[0352] According to an embodiment, the first light blocking structure 130 of the sensing area SA has an effective pinhole 130a that overlaps with the effective pinhole 120a of the second light blocking structure 120. The focus F of the reflected light RL is located on the effective pinhole 130a of the first light blocking structure 130. In this case, the size of the effective pinhole 130a of the first light blocking structure 130 is smaller than the size of the effective pinhole 120a of the second light blocking structure 120. Alternatively, in other embodiments, the focus F of the reflected light RL is located on the effective pinhole 120a of the second light blocking structure 120. In this case, the size of the effective pinhole 120a of the second light blocking structure 120 is smaller than the size of the effective pinhole 130a of the first light blocking structure 130.

[0353] According to an embodiment, the effective pinhole 130a of the first light blocking structure 130 is defined by at least two of the first conductive pattern 137a, the second conductive pattern 137b, the third conductive pattern 137c, the fourth conductive pattern 137d, and the fifth conductive pattern 137e.

[0354] For example, according to an embodiment, the first conductive pattern 137a is Fig.23The second conductive pattern 137b is one of the seventh source electrode SE7, the first drain electrode DE1, the 3bth active pattern ACT3b, the 3bth drain electrode DE3b, the 4bth drain electrode DE4b and the 4ath drain electrode DE4a shown in FIG. Fig.23 The third conductive pattern 137c is one of the i+1 scan line Si+1, the i emission control line Ei, the i scan line Si and the i-1 scan line Si-1. Fig.23 The fourth conductive pattern 137d is one of the initialization power line IPL and the capacitor upper electrode UE shown in FIG. Fig.23 The fifth conductive pattern 137e is a pixel power line PL, a first connection line CNL1, and a second connection line CNL2. Fig.23 The connection pattern shown in CNP.

[0355] According to an embodiment, the electroluminescent device 1 further comprises a touch sensing structure 200 disposed on the electroluminescent structure 140. Figure 7 and Fig.8D The touch sensing structure 200 is described in , and thus a repeated description thereof will be omitted here.

[0356] Fig.24 According to the embodiments of the present disclosure Fig.21 A plan view of the pixel shown in FIG.

[0357] According to an embodiment, Fig.24 The effective pinhole 130 a of the first light blocking structure 130 shown in FIG. 1 is defined by the j-th data line Dj, the pixel power line PL, the i-th emission control line Ei, and the lower electrode 143 .

[0358] According to an embodiment, a portion of the inner wall of the effective pinhole 130a of the first light blocking structure 130 is defined by a portion of the outer wall of the lower electrode 143. In other words, the portion of the inner wall of the effective pinhole 130a of the first light blocking structure 130 and the portion of the outer wall of the lower electrode 143 vertically correspond to each other. In this case, the lower electrode 143 is also included in the first light blocking structure 130.

[0359] While various exemplary embodiments have been described above, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the present disclosure.

[0360] Therefore, the exemplary embodiments disclosed in this specification are for illustrative purposes only, rather than limiting the technical spirit of the present disclosure. The scope of the exemplary embodiments of the present disclosure is defined by the appended claims.

[0361] The electroluminescent device according to the embodiment of the present disclosure can improve the accuracy of fingerprint sensing by using a light emitting element provided in a pixel as a light source and increasing the light amount of the light source.

[0362] In addition, the electroluminescent device according to an embodiment of the present disclosure has at least one effective pinhole arranged in a pixel, and the effective pinhole is spaced apart from some components of the touch sensing structure, thereby increasing the intensity (or amount) of reflected light incident on the image sensor, and thereby allowing the user's fingerprint to be accurately sensed and realizing a slimmer electroluminescent device.

Claims

1. Electroluminescent device, comprising: a first insulating layer; an electroluminescent structure, comprising a lower electrode disposed on the first insulating layer, a light-emitting layer disposed on the lower electrode, and an upper electrode disposed on the light-emitting layer; a first light blocking structure disposed below the first insulating layer and comprising a first effective pinhole; as well as an image sensor structure disposed below the first light blocking structure and comprising an effective image sensor overlapping the first effective pinhole, wherein the lower electrode does not overlap with the first effective pinhole; The electroluminescent structure has at least two overlapping regions where the light-emitting layers overlap, and the first effective pinhole overlaps the overlapping region.

2. An electroluminescent device according to claim 1, wherein: The first light blocking structure further includes a first dummy pinhole, The first dummy pinhole is located between the first effective pinholes, and The first effective pinholes and the first dummy pinholes form a single grid arrangement in a plan view.

3. The electroluminescent device according to claim 2, further comprising: a second light blocking structure disposed between the first light blocking structure and the image sensor structure and comprising a second light blocking area and a second effective pinhole, wherein: The second light blocking area does not overlap with the first effective pinhole and blocks light passing through the first dummy pinhole, and The second effective pinhole overlaps with the first effective pinhole.

4. The electroluminescent device according to claim 1, further comprising: a second light blocking structure disposed between the first light blocking structure and the image sensor structure and comprising a second light blocking area and a second effective pinhole, wherein: The second light blocking area does not overlap with the first effective pinhole, and The second effective pinhole overlaps with the first effective pinhole.

5. The electroluminescent device according to claim 4, wherein The second light blocking region includes an additional pinhole.

6. The electroluminescent device according to claim 5, further comprising: A light blocking member is disposed above or below the additional pinhole and overlaps the additional pinhole.

7. The electroluminescent device according to claim 5, wherein: The additional pinhole is smaller than the second effective pinhole.

8. The electroluminescent device according to claim 1, wherein The shortest planar distance from the optical center of the first effective pinhole to the lower electrode is greater than a planar distance measured from the optical center of the first effective pinhole to an inner wall of the first effective pinhole in a first direction in which the shortest planar distance from the optical center of the first effective pinhole to the lower electrode is measured.

9. The electroluminescent device according to claim 8, wherein The lower electrodes include a single first lower electrode that is closest to the optical center of the first effective pinhole in plan view and a single second lower electrode that is second closest to the optical center of the first effective pinhole in plan view.

10. An electroluminescent device according to claim 9, wherein: the shortest planar distance from the optical center of the first effective pinhole to the single second lower electrode is measured in a second direction, and The angle between the first direction and the second direction is not k×180°, where k is an integer other than zero.

11. The electroluminescent device according to claim 8, wherein The lower electrodes include a single first lower electrode that is closest to the optical center of the first effective pinhole in a plan view and at least two second lower electrodes that are next closest to the optical center of the first effective pinhole in a plan view.

12. The electroluminescent device according to claim 8, wherein The lower electrodes include at least two first lower electrodes that are closest to the optical center of the first effective pinhole in a plan view.

13. The electroluminescent device of claim 8, further comprising: a pixel defining layer disposed on the first insulating layer and covering an edge of the lower electrode, and a spacer, disposed on the pixel defining layer to be higher than the pixel defining layer, The shortest plane distance from the optical center of the first effective pinhole to the spacer is greater than the shortest plane distance from the optical center of the first effective pinhole to the lower electrode.

14. The electroluminescent device of claim 13, further comprising: A touch sensing structure, comprising a touch sensing electrode and a bridge portion and located above the electroluminescent structure, wherein: The bridge portion electrically connects two adjacent touch sensing electrodes to each other, and The shortest plane distance from the optical center of the first effective pinhole to the bridge portion is greater than the shortest plane distance from the optical center of the first effective pinhole to the spacer portion.

15. The electroluminescent device of claim 1, further comprising: a pixel defining layer disposed on the first insulating layer and covering an edge of the lower electrode, and a spacer, disposed on the pixel defining layer to be higher than the pixel defining layer, Wherein, the shortest plane distance from the optical center of the first effective pinhole to the spacer is greater than the plane distance measured from the optical center of the first effective pinhole to the inner wall of the first effective pinhole in the third direction of measuring the shortest plane distance from the optical center of the first effective pinhole to the spacer.

16. The electroluminescent device of claim 15, wherein The spacers include a single first spacer that is closest to the optical center of the first effective pinhole in a plan view and a single second spacer that is second closest to the optical center of the first effective pinhole in a plan view.

17. An electroluminescent device according to claim 16, wherein: The shortest planar distance from the optical center of the first effective pinhole to a single second spacer is measured in a fourth direction, and The third direction and the fourth direction form a second angle, and the second angle is not m×180°, where m is an integer other than zero.

18. The electroluminescent device of claim 15, wherein: The spacers include a single first spacer that is closest to the optical center of the first effective pinhole in a plan view and at least two second spacers that are second closest to the optical center of the first effective pinhole in a plan view.

19. The electroluminescent device of claim 15, wherein: The spacers include at least two first spacers that are closest to the optical center of the first effective pinhole in a plan view.

20. The electroluminescent device of claim 15, further comprising: A touch sensing structure, comprising a touch sensing electrode and a bridge portion and located above the electroluminescent structure, wherein: The bridge portion electrically connects two adjacent touch sensing electrodes to each other, and The shortest plane distance from the optical center of the first effective pinhole to the bridge portion is greater than the shortest plane distance from the optical center of the first effective pinhole to the spacer portion.

21. The electroluminescent device of claim 1, further comprising: A touch sensing structure, comprising a touch sensing electrode and a bridge portion and located above the electroluminescent structure, wherein: The bridge portion electrically connects two adjacent touch sensing electrodes to each other, and The shortest planar distance from the optical center of the first effective pinhole to the bridge portion is greater than a planar distance measured from the optical center of the first effective pinhole to an inner wall of the first effective pinhole in a fifth direction for measuring the shortest planar distance from the optical center of the first effective pinhole to the bridge portion.

22. An electroluminescent device according to claim 21, wherein The bridge portions include a single first bridge portion that is closest to the optical center of the first effective pinhole in a plan view and a single second bridge portion that is second closest to the optical center of the first effective pinhole in a plan view.

23. An electroluminescent device according to claim 22, wherein: The shortest planar distance from the optical center of the first effective pinhole to a single second bridge portion is measured in a sixth direction, and The fifth direction and the sixth direction form a third angle, and the third angle is n×180°, where n is an integer other than zero.

24. The electroluminescent device of claim 21, wherein: The bridge portion includes a single first bridge portion that is closest to the optical center of the first effective pinhole in a plan view and at least two second bridge portions that are next closest to the optical center of the first effective pinhole in a plan view.

25. The electroluminescent device of claim 21, wherein: The bridge portion includes at least two first bridge portions that are closest to the optical center of the first effective pinhole in a plan view.

26. The electroluminescent device of claim 1, further comprising: A touch sensing structure, comprising a bridge portion and a touch sensing electrode disposed on a layer different from the bridge portion, and the touch sensing structure is located above the electroluminescent structure, wherein: The bridge portion electrically connects two adjacent touch sensing electrodes to each other. The bridge portion includes an overlapping area overlapping with the touch sensing electrode, and The shortest planar distance from the optical center of the first effective pinhole to the overlapping area is greater than a planar distance measured from the optical center of the first effective pinhole to an inner wall of the first effective pinhole in a direction in which the shortest planar distance from the optical center of the first effective pinhole to the overlapping area is measured.

27. The electroluminescent device of claim 1, further comprising: a pixel defining layer disposed on the first insulating layer and covering an edge of the lower electrode, and a spacer, disposed on the pixel defining layer to be higher than the pixel defining layer, Wherein, the overlapping area does not overlap with the spacing portion.

28. The electroluminescent device of claim 1, further comprising: a pixel defining layer disposed on the first insulating layer and covering an edge of the lower electrode, and A spacer is disposed on the pixel defining layer to be higher than the pixel defining layer, wherein: The spacer has a curved edge between a side surface and an upper surface of the spacer in cross section, The spacer has a curved edge in plan view, and The spacer overlaps with the first effective pinhole.

29. The electroluminescent device of claim 1, wherein: The image sensor structure further includes dummy image sensors located between the effective image sensors.

30. Electroluminescent devices, comprising: An electroluminescent structure, comprising a lower electrode disposed on an insulating layer, a light-emitting layer disposed on the lower electrode, and an upper electrode disposed on the light-emitting layer; a first light blocking structure located on the same layer as the lower electrode; as well as An image sensor structure, located below the insulating layer and comprising an effective image sensor, wherein: The electroluminescent structure includes a light emitting region where the lower electrode, the light emitting layer, and the upper electrode overlap each other to emit light, and The first light blocking structure includes a first effective pinhole overlapping the effective image sensor; The electroluminescent structure has at least two overlapping regions where the light-emitting layers overlap, and the first effective pinhole overlaps the overlapping region.

31. An electroluminescent device according to claim 30, wherein The first light blocking structure is integrally formed with the lower electrode.

32. The electroluminescent device of claim 30, wherein: the first light blocking structure is not electrically coupled to the lower electrode, The first light blocking structure has an island shape that does not surround the lower electrode, and The first light blocking structure is provided in plurality.

33. An electroluminescent device according to claim 32, wherein The first light blocking structure is electrically coupled to the upper electrode.

34. The electroluminescent device of claim 30, wherein: the first light blocking structure is not electrically coupled to the lower electrode, The first light blocking structure has a grid shape having holes, and The hole surrounds the lower electrode.

35. An electroluminescent device according to claim 34, wherein The first light blocking structure is electrically coupled to the upper electrode.

36. The electroluminescent device of claim 30, further comprising a second light blocking structure, the second light blocking structure being located between the first light blocking structure and the image sensor structure and comprising a second effective pinhole, wherein: The first effective pinhole overlaps with the second effective pinhole, and The first effective pinhole is smaller than the second effective pinhole.

37. Electroluminescent device, comprising: An electroluminescent structure comprising a lower electrode, a light-emitting layer disposed on the lower electrode, and an upper electrode disposed on the light-emitting layer; a light blocking structure disposed below the electroluminescent structure and comprising an effective pinhole; an image sensor structure disposed below the light blocking structure and including an image sensor overlapping the effective pinhole; as well as A touch sensing structure, comprising a touch sensing electrode and a bridge portion and located above the electroluminescent structure, wherein: The lower electrode does not overlap with the effective pinhole, The bridge portion electrically connects two adjacent touch sensing electrodes to each other, and At least one selected from the group of the touch sensing electrode and the bridge portion includes at least one opening overlapping the effective pinhole.

38. An electroluminescent device according to claim 37, wherein: The electroluminescent structure includes a light emitting region where the lower electrode, the light emitting layer, and the upper electrode overlap each other to emit light, The at least one selected from the group of the touch sensing electrode and the bridge portion further includes a hole overlapping the light emitting area, and The size of the opening is larger than the size of the hole.

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