Substrate processing chamber including a showerhead having a cooled faceplate

Abstract

A showerhead for a substrate processing chamber comprises: inner walls; an inner plenum cavity located between the inner walls; a panel having a first surface and a second surface, the second surface being opposite the first surface; an aperture through the panel extending from the first surface to the second surface; a first inlet fluidly connected to the inner plenum cavity; an outer wall; a first outer plenum cavity located between the inner wall and the outer wall; a second outer plenum cavity located between the inner wall and the outer wall; and a coolant channel that: fluidly connects the first outer plenum cavity to the second outer plenum cavity; is disposed within the panel and between the first and second surfaces; and is fluidly isolated from the aperture. The showerhead also includes: a second inlet fluidly connected to the first outer plenum cavity.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to U.S. Patent Application No. 16 / 006,355 filed on June 12, 2018. The entire disclosure of the above-referenced application is incorporated herein by reference. Technical Field

[0003] The present disclosure relates to substrate processing systems, and more particularly to substrate processing chambers having cooled showerheads. Background Art

[0004] The background description provided here is for the purpose of generally presenting the context of the present disclosure. The work of the presently designated inventors is neither explicitly nor implicitly admitted to be prior art against the present disclosure to the extent that it is described in this background section and in aspects of the specification that were not determined to be prior art at the time the application was filed.

[0005] The substrate processing system can be used to process substrates such as semiconductor wafers. Exemplary processes that can be performed on a substrate include, but are not limited to, deposition, etching, cleaning, and other types of processes.

[0006] The substrate may be arranged on a substrate support, such as a pedestal or an electrostatic chuck (ESC), located in a process chamber. A showerhead within the process chamber distributes a gas or a gas mixture. A plasma is used to initiate a chemical reaction within the process chamber. Summary of the invention

[0007] In one feature, a showerhead for a substrate processing chamber is described. The showerhead includes: inner walls; an inner plenum cavity located between the inner walls; a panel having a first surface and a second surface, the second surface being opposite the first surface; an aperture through the panel extending from the first surface to the second surface; a first inlet fluidly connected to the inner plenum cavity; an outer wall; a first outer plenum cavity located between the inner wall and the outer wall; a second outer plenum cavity located between the inner wall and the outer wall; and a coolant channel that: fluidly connects the first outer plenum cavity to the second outer plenum cavity; is disposed within the panel and between the first and second surfaces; and is fluidly isolated from the aperture. The showerhead also includes: a second inlet fluidly connected to the first outer plenum cavity.

[0008] In other features, the direction in which the coolant passages pass through the panel is perpendicular to a second direction in which the holes pass through the panel.

[0009] In other features, the spray head includes: a stem portion including a first end and a second end and including a first diameter; and a base portion connected to the second end of the stem portion and including a second diameter greater than the first diameter.

[0010] In other features, each of the coolant channels is parallel to each of the other of the coolant channels.

[0011] In other features, the spray head further includes an outlet fluidly connected to the second outer air-filled chamber.

[0012] In other features, the spray head further includes a partition member disposed between the inner wall and the outer wall and fluidically isolating the first outer air-filled cavity from the second outer air-filled cavity.

[0013] In other features, the showerhead further includes a second hole that: extends from the second surface to the coolant channel; and does not extend to the first surface.

[0014] In other features, the second hole is parallel to the hole through the panel.

[0015] In other features, the second aperture is fluidly isolated from the aperture through the panel.

[0016] In other features, a processing system includes: the substrate processing chamber; the showerhead, wherein the showerhead is disposed within the substrate processing chamber; a coolant assembly configured to provide a coolant to the second inlet; and a temperature controller configured to control the coolant assembly to cool the coolant to less than or equal to a predetermined temperature during plasma enhanced chemical vapor deposition (PECVD) of a film on a substrate within the substrate processing chamber.

[0017] In other features, the film is silicon nitride (SiN).

[0018] In other features, the processing system further includes a system controller configured to flow silane and a gas containing nitrogen into the substrate processing chamber via the first inlet, the inner plenum, and the aperture for the PECVD of the film on the substrate.

[0019] In other features, the system controller is configured to generate a plasma between the showerhead and the substrate.

[0020] In other features, the temperature controller is further configured to control the coolant assembly to cool the coolant to less than or equal to the predetermined temperature during a purge of a film deposited on a substrate via plasma enhanced chemical vapor deposition (PECVD) from within the substrate processing chamber.

[0021] In other features, the film is silicon nitride (SiN).

[0022] In other features, the processing system further includes a system controller configured to flow nitrogen trifluoride (NF3) into the substrate processing chamber via the first inlet, the inner plenum, and the aperture during the purge.

[0023] In other features, the panel is constructed of aluminum.

[0024] Among other features, a showerhead for a substrate processing chamber is described. The showerhead includes: an inner plenum chamber; a panel having a first surface and a second surface, the second surface being opposite the first surface; a hole through the panel from the first surface to the second surface; a first inlet fluidly connected to the inner plenum chamber; a first outer plenum chamber disposed radially outward of the inner plenum chamber; a second outer plenum chamber disposed radially outward of the inner plenum chamber; a coolant channel that: fluidly connects the first outer plenum chamber to the second outer plenum chamber; is disposed within the panel and between the first surface and the second surface; and does not intersect the hole through the panel. The showerhead also includes: a second inlet fluidly connected to the first outer plenum chamber; and an outlet fluidly connected to the first outer plenum chamber.

[0025] In other features, a processing system includes: the substrate processing chamber; the showerhead, wherein the showerhead is disposed within the substrate processing chamber and the faceplate is formed of aluminum; and a coolant assembly configured to input a coolant to the second inlet and receive the coolant from the outlet; and a temperature controller configured to control the coolant assembly to cool the coolant to less than or equal to a predetermined temperature during: during plasma enhanced chemical vapor deposition (PECVD) of a film on a substrate within the substrate processing chamber; and during a purge of the film from within the substrate processing chamber.

[0026] In other features, the processing system further includes a system controller, which is configured to: for the PECVD of the film on the substrate, flow silane and a gas containing nitrogen into the substrate processing chamber through the first inlet, the inner gas chamber and the hole; and during the purge, flow nitrogen trifluoride (NF3) into the substrate processing chamber through the first inlet, the inner gas chamber and the hole, wherein the film is silicon nitride (SiN).

[0027] Further scope of applicability of the present disclosure will become apparent from the detailed description, claims and drawings.The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The present disclosure will be more fully understood from the detailed description and accompanying drawings, in which:

[0029] Figure 1 is a functional block diagram of an exemplary processing chamber;

[0030] Figure 2 A functional block diagram is included that includes an exemplary cooling system including a coolant assembly;

[0031] Figure 3 Included are cross-sectional views of exemplary showerheads.

[0032] Figure 4 Includes bottom view of an exemplary sprinkler head:

[0033] Figure 5 includes a cross-sectional view of an exemplary showerhead;

[0034] Figure 6 and 7 A 3D cross-sectional view of an example base portion containing a showerhead: and

[0035] Figure 8 Included are flow charts depicting exemplary methods for cooling a showerhead during (a) deposition of a film on a substrate and (b) purge of a processing chamber.

[0036] Among the drawings, reference numerals may be repeated to identify similar and / or identical elements. DETAILED DESCRIPTION

[0037] The substrate support supports the substrate in the process chamber. The showerhead distributes process gases in the process chamber. For example, during deposition, the showerhead distributes one or more precursor gases to deposit a film on the substrate. During a purge of the process chamber, the showerhead distributes one or more purge gases to remove the film from the showerhead and other surfaces in the process chamber.

[0038] Chamber sweeping is performed on an event basis or periodically (e.g., every predetermined number of deposition cycles) before the film begins to flake off the showerhead and / or other surfaces within the chamber. During deposition, flakes of film may fall onto the substrate, which increases defects.

[0039] Showerheads used for deposition, such as plasma enhanced chemical vapor deposition (PECVD), are not cooled. Showerheads in accordance with the present disclosure are cooled during deposition of the film and during purges of the process chamber.

[0040] The thickness of the film on the showerhead before flaking begins is related to the temperature of the showerhead. By cooling the showerhead during deposition, a thicker film can be allowed to accumulate on the showerhead before the film begins to flake from the showerhead. Therefore, when the showerhead is cooled, the purge cycle can be performed less frequently. In other words, when the showerhead is cooled, more substrates can be processed between consecutive purge cycles.

[0041] Cooling the faceplate of the spray head during purging reduces the amount of wear on the spray head during purging. Therefore, cooling the spray head during purging can increase the life of the spray head and increase the time between spray head replacements.

[0042] Reference now Figure 1 , an exemplary substrate processing system 100 is shown. By way of example only, the substrate processing system 100 can be used for chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD, etching, and / or one or more types of processing.

[0043] The substrate processing system 100 includes a processing chamber 102 that surrounds components of the substrate processing system 100 and contains a radio frequency (RF) plasma. Although an example of the substrate processing system 100 and the processing chamber 102 is shown, the present disclosure may also be applied to other types of substrate processing systems and processing chambers, such as substrate processing systems that generate plasma in situ, substrate processing systems that achieve remote plasma generation and delivery (e.g., using a plasma tube, a microwave tube), and the like.

[0044] The processing chamber 102 includes a substrate support 106, such as an electrostatic chuck (ESC). A substrate 108 is arranged on the substrate support 106, and one or more plasma processes are performed on the substrate 108. For example, a silicon nitride (SiN) film can be deposited on the substrate in the processing chamber 102. Although an example of a SiN film is provided, the present application can also be applied to the deposition of films of other chemicals.

[0045] The showerhead 109 acts as an upper electrode and introduces and distributes process gases into the processing chamber 102. The showerhead 109 is discussed further below.

[0046] The substrate support 106 may include a conductive bottom plate 110 as a lower electrode. The bottom plate 110 supports a ceramic layer 112. A thermal resistance layer 114 (e.g., a bonding layer) may be disposed between the ceramic layer 112 and the bottom plate 110. The bottom plate 110 may include one or more coolant channels 116 for flowing a coolant through the bottom plate 110. In some examples, a protective seal 176 may be disposed around the perimeter of the thermal resistance layer 114 between the ceramic layer 112 and the bottom plate 110.

[0047] The RF generation system 120 generates an RF voltage and outputs it to one of an upper electrode (e.g., showerhead 109) and a lower electrode (e.g., bottom plate 110 of substrate support 106) to ignite and maintain plasma. The other of the upper electrode and the lower electrode may be grounded by direct current (DC), grounded by alternating current (AC), or floating. For example only, the RF generation system 120 may include an RF voltage generator 122 for generating an RF voltage, which is fed to the upper electrode or the lower electrode through a matching and distribution network 124.

[0048] The gas delivery system 130 includes one or more gas sources 132-1, 132-2, ..., and 132-N (collectively referred to as gas sources 132), where N is an integer greater than zero. The gas source 132 supplies one or more deposition gases, etching gases, carrier gases, inert gases, and mixtures thereof. For example, the gas source 132 supplies one or more precursor gases to deposit a film on a substrate. Additionally or alternatively, the gas source 132 may provide one or more purge gases (e.g., molecular hydrogen) that may be used to purge a film from within the processing chamber 102. The gas source 132 also supplies a purge gas.

[0049] The gas source 132 is connected to a manifold 140 through valves 134-1, 134-2, ..., and 134-N (collectively referred to as valves 134) and mass flow controllers 136-1, 136-2, ..., and 136-N (collectively referred to as mass flow controllers 136). By way of example only, the output of the manifold 140 is fed to the showerhead 109 and output from the showerhead 109 to the processing chamber 102. Although one example of a manifold is provided, the showerhead 109 may receive gases from more than one manifold.

[0050] The temperature controller 142 may be connected to a plurality of heating elements, such as thermal control elements (TCEs) 144 disposed in the ceramic layer 112. For example, the TCEs 144 may include, but are not limited to, large heating elements corresponding to respective zones in the multi-zone heating plate and / or an array of micro-heating elements disposed across multiple zones of the multi-zone heating plate. The TCEs 144 may be, for example, resistive heaters (heaters that generate heat when power is applied to the heaters, respectively), or another suitable type of heating element. The temperature controller 142 controls the TCEs 144 to control the temperature at various locations on the substrate support 106 and the substrate 108.

[0051] The temperature controller 142 also communicates with the coolant assembly 146 and controls the flow of coolant (fluid) through the coolant channel 116. The coolant can be a liquid or a gas. The temperature controller 142 operates the coolant assembly 146 to selectively flow the coolant through the coolant channel 116 to cool the substrate support 106. Cooling the substrate support 106 is cooling the substrate on the substrate support 106. The temperature controller 142 can control the TCE 144 together with the coolant assembly 146 to achieve one or more target temperatures and / or one or more target coolant flow rates during one or more processes, for example.

[0052] The valve 150 and pump 152 may be used to evacuate (purge) reactants and other gases from the processing chamber 102. The system controller 160 may be used to control the components of the substrate processing system 100. The robot 170 may be used to transport substrates to and remove substrates from the substrate support 106. For example, the robot 170 may transfer substrates between the substrate support 106 and a load lock 172. Although shown as a separate controller, the temperature controller 142 may be implemented within the system controller 160.

[0053] In some examples, the substrate support 106 includes an edge ring 180. The edge ring 180 can move relative to the substrate 108 (e.g., can move up and down in a vertical direction). For example, the movement of the edge ring 180 can be controlled via an actuator in response to the system controller 160. In some examples, a user can input control parameters to the system controller 160 via a user interface 183, which includes one or more input mechanisms, a display, and the like.

[0054] The showerhead 109 includes a rod portion 182 including one end that can be connected to the top surface of the processing chamber 102. The showerhead 109 also includes a base portion 184 that extends radially outward from the opposite end of the rod portion 182 located at a position spaced apart from the top surface of the processing chamber 102. The rod portion 182 and the base portion 184 can be made of, for example, aluminum or another suitable conductive material. A faceplate 185 of the base portion 184 of the showerhead 109 includes a substrate-facing surface and includes a plurality of holes through which process gas flows.

[0055] The film deposited on the substrate also accumulates in the process chamber 102, for example, on the inner wall of the process chamber 102 and the showerhead 109. If the film is not swept / removed from the process chamber 102, the film may peel off during film deposition (for example, from the showerhead 109) and increase substrate defects.

[0056] The system controller 160 periodically executes a purge cycle of the process chamber 102, for example, whenever a predetermined event occurs or whenever a predetermined number of substrates have been processed in the process chamber 102. The predetermined number is calibrated and set to be less than the number of substrates at which the film begins to flake off from the showerhead 109 during film deposition. The system controller 160 uses plasma and one or more purge gases, such as nitrogen trifluoride (NF3), to purge the film from within the process chamber 102 and the showerhead 109. Although an example of nitrogen trifluoride is provided, another suitable purge gas chemistry may be used to purge the film.

[0057] According to the present application, via the coolant assembly 186, the temperature controller 142 cools the showerhead 109 during deposition of a film on a substrate and during a purge of the processing chamber 102. The coolant assembly 186 pumps a coolant through the showerhead 109 during deposition and during a purge to cool the faceplate 185 and the showerhead 109.

[0058] By cooling the showerhead 109 during deposition, a thicker film can be allowed to accumulate on the showerhead 109 before the film begins to flake off the showerhead 109. As a result, purge cycles can be performed less frequently. In other words, more substrates can be processed within the processing chamber 102 between consecutive purge cycles.

[0059] Cooling the faceplate of the showerhead 109 during purge reduces wear of the showerhead 109 caused by the purge gas. For example, changes in roughness and emissivity of the faceplate 185 caused by purge may be smaller when the showerhead 109 is cooled than when the showerhead 109 is not cooled or indirectly cooled (e.g., via coolant flow through the substrate support 108). Thus, cooling the showerhead 109 during purge may increase the life of the showerhead 109 and increase the time between showerhead replacements.

[0060] Figure 2 A functional block diagram is included, which includes an exemplary cooling system 200 including a coolant assembly 186. The cooling system 200 may include a first three-way proportional valve (hereinafter referred to as the first valve) 204, a second three-way proportional valve (hereinafter referred to as the second valve) 206, a third three-way proportional valve (hereinafter referred to as the third valve) 208, and first and second temperature control units (TCUs) (coolant sources) 216 and 218. The first TCU 216 supplies coolant at a first temperature. The second TCU 218 supplies coolant at a second temperature. Although an example of two TCUs is provided, only one TCU may be implemented or more than two TCUs may be implemented.

[0061] In certain implementations, the flow rate of each of the first TCU216 and the second TCU218 may be fixed. The flow rates of the first TCU216 and the second TCU218 may be the same or different. For example, the first TCU216 may have a first fixed flow rate, and the second TCU218 may have a second fixed flow rate that is the same as or different from the first fixed flow rate. The first TCU216 and the second TCU218 each include a pump. The pump of the first TCU216 pumps the coolant to the first valve 204, and the pump of the second TCU218 pumps the coolant to the second valve 206. The first TCU216 and the second TCU218 also each include one or more heating devices (e.g., electric heaters) and / or one or more cooling devices (e.g., coolers) for heating and / or cooling the coolant in the first TCU216 and the second TCU218.

[0062] The first valve 204 has an input port 220, a first output port 222, and a second output port (or bypass) 224. The second valve 206 has an input port 226, a first output port 228, and a second output port (or bypass) 230. The third valve 208 has an input port 232, a first output port 234, and a second output port 236.

[0063] The input port 220 of the first valve 204 receives coolant at a first temperature at a first fixed flow rate from the first TCU 216 via a first fluid line 238. The input port 226 of the second valve 206 receives coolant at a second temperature at a second fixed flow rate from the second TCU 218 via a second fluid line 240.

[0064] The first output port 222 of the first valve 204 outputs the first portion of the coolant received from the first TCU 216 into the supply line 242. The first output port 228 of the second valve 206 outputs the first portion of the coolant received from the second TCU 218 into the supply line 242. The first portions of the coolant output from the first output ports 222 and 228 of the first valve 204 and the second valve 206, respectively, are mixed in the supply line 242. The mixed coolant in the supply line 242 is input to the spray head 109.

[0065] The temperature controller 142 controls the first valve 204 and the second valve 206, thereby controlling the amount of the first portion of the coolant output from the first output ports 222 and 228 of the first valve 204 and the second valve 206, respectively, to the supply line 242. The temperature controller 142 controls the first valve 204 and the second valve 206, and determines the amount based on a target (or set point) temperature.

[0066] The temperature controller 142 sets the target temperature to a predetermined temperature during deposition of the film on the substrate and during the purge of the process chamber 102. The predetermined temperature is calibrated and may be, for example, less than or equal to approximately 380 degrees Celsius. In various implementations, the temperature controller 142 may set the target temperature to a predetermined temperature during deposition of the film on the substrate and to a second predetermined temperature (which is different from the first predetermined temperature) during the purge of the process chamber 102. The first and second predetermined temperatures are less than or equal to approximately 380 degrees Celsius. As used herein, the term about may mean a difference of + / - 10 percent from the relevant value. In various implementations, the temperature controller 142 may set the target temperature to one or more other temperatures at other times.

[0067] The second (remaining) portion of the coolant from the first TCU 216 received through the first valve 204 may be returned to the first TCU 216 via the second output port (or bypass) 224 of the first valve 204 and via the fluid line 244. The second (remaining) portion of the coolant from the second TCU 218 received through the second valve 206 may be returned to the second TCU 218 via the second output port (or bypass) 230 of the second valve 206 and via the fluid line 246.

[0068] Since the second portion of the coolant received through the first valve 204 and the second valve 206 is returned to the first TCU 216 and the second TCU 218, the first TCU 216 and the second TCU 218 can supply the coolant to the first valve 204 and the second valve 206 at a corresponding fixed flow rate. This can simplify the design of the first TCU 216 and the second TCU 218. For example, the pumps of the first TCU 216 and the second TCU 218 can be operated at a single speed. Although operating at a single speed, the target temperature can be achieved by adjusting the opening of the first valve 204 and / or the second valve 206.

[0069] The coolant output from the spray head 109 is received through the input port 232 of the third valve 208 via the return line 248. The third valve 208 distributes the returned coolant between the first TCU 216 and the second TCU 218. A first portion of the coolant received through the third valve 208 returns to the first TCU 216 via the first output port 234 of the third valve 208 and through the fluid line 250 and the fluid line 244. A second portion of the coolant received through the third valve 208 returns to the second TCU 218 via the second output port 236 of the third valve 208 and through the fluid line 252 and the fluid line 246.

[0070] The temperature controller 142 controls the third valve 208 and determines the appropriate or target amounts of the first and second portions of the coolant outputted from the first output port 234 and the second output port 236 of the third valve 208 to the first TCU 216 and the second TCU 218, respectively. For example, the temperature controller 142 monitors the liquid level of the coolant in the first TCU 216 and the second TCU 218 based on data received from the liquid level sensors 217 and 219 in the first TCU 216 and the second TCU 218. The temperature controller 142 determines the liquid level of the coolant in each of the first TCU 216 and the second TCU 218 and determines the amounts of the first and second portions of the coolant returned to the first TCU 216 and the second TCU 218 based on the liquid level.

[0071] A temperature sensor 254 (e.g., a thermocouple) senses the temperature of the coolant input to the showerhead 109. A flow rate sensor (e.g., a flow meter) 256 measures the flow rate of the coolant input to the showerhead 109 through the supply line 242. Although not shown, a second temperature sensor and a second flow meter may be coupled to the return line 248 and measure the temperature and flow rate of the coolant through the return line 248.

[0072] The temperature controller 142 may include a proportional integral derivative (PID) controller or another suitable type of closed loop controller. The temperature controller 142 controls the amount of coolant supplied through the first valve 204 and the second valve 206 based on a target temperature at which the coolant is to be supplied to the showerhead 109. For example, the temperature controller 142 may control the first valve 204 and the second valve 206 to adjust the temperature measured by the temperature sensor 254 toward or to the target temperature.

[0073] In addition, the temperature controller 142 controls the amount of coolant supplied through the first valve 204 and the second valve 206 based on the target flow rate at which the coolant is to be supplied to the showerhead 109. For example, the temperature controller 142 may control the first valve 204 and the second valve 206 to adjust the flow rate measured by the flow rate sensor 256 toward or to the target flow rate.

[0074] Figure 3 18 is a cross-sectional view of an example of the spray head 109. As described above, the spray head 109 includes a stem portion 182 and a base portion 184. The base portion 184 includes a face plate 185.

[0075] An inner plenum 312 is disposed between the inner walls 308. Process gas flows from the manifold 140 into the inner plenum 312 via a first inlet 316. The process gas flows from the inner plenum 312 into the processing chamber 102 via holes 314 through the faceplate 185. A baffle 320 may be disposed within the inner plenum 312. The baffle 320 may be configured to distribute the process gas within the inner plenum 312 in a radially outward manner.

[0076] The first outer plenum cavity 324 and the second outer plenum cavity 326 are disposed between the inner wall 308 and the outer wall 328 of the showerhead 109. The coolant flows from the coolant assembly 186 into the first outer plenum cavity 324 via the second inlet 332. The coolant flows from the first outer plenum cavity 324 to the second outer plenum cavity 326 via the coolant passage 336 through the panel 185. The coolant passage 336 is formed between the holes 314 through the panel 185. The coolant passage 336 is distributed throughout the panel 185 so that the temperature across the entire panel 185 is approximately equal. The coolant flows from the second outer plenum cavity 326 to the coolant assembly 186 via the outlet 340. The coolant passage 336 may be perpendicular to the hole 314.

[0077] Figure 4 A bottom view of an exemplary implementation of the showerhead 109 is included, looking toward the panel 185. Figure 4 , material between the coolant channels 336 and the substrate-facing surface of the faceplate 185 has been removed to illustrate the coolant channels 336 and the holes 314 .

[0078] The partition member 404 extends through the stem portion 182 and the base portion 184. The partition member 404 separates the first outer plenum chamber 324 from the second outer plenum chamber 326 so that coolant can flow from the first outer plenum chamber 324 to the second outer plenum chamber 326 only through the coolant passages 336. For example, the partition members 404 can be disposed 180 degrees relative to each other around the spray head 109. Each of the coolant passages 336 can be parallel to the rest of the coolant passages 336. The distances between adjacent ones of the coolant passages 336 can be the same, different, or a combination of the same and different distances.

[0079] Although exemplary hole numbers and arrangements are provided, the present application may also be applied to other hole numbers and / or arrangements. Similarly, although exemplary coolant channel numbers and arrangements are provided, the present application may also be applied to other coolant channel numbers and / or arrangements.

[0080] Figure 5 A cross-sectional view of an exemplary implementation including a showerhead 109. Figure 5In the example of , the cross section is obtained at the partition member 404. As shown, each coolant channel 336 may include a group of two or more individual coolant channels 504. Although an example of three individual coolant channels 504 is provided, each coolant channel 336 may include one, two, or more than two individual coolant channels. When each coolant channel 336 includes two or more individual coolant channels, cooling of the faceplate 185 throughout the showerhead may be more uniform. In various implementations, the isolation member 508 may be implemented within the inner plenum cavity 312.

[0081] Figure 6 A three-dimensional cross-sectional view of an exemplary implementation of a base portion 184 including a showerhead 109. Figure 6 In the example of FIG. 4 , the cross section is again obtained at the partition member 404. For illustration purposes only, the length of the coolant channel 336 has been truncated. The coolant channel 336 extends to the radially outer edge of the spray head 109, where the coolant channel 336 opens into the first outer plenum cavity 324 and the second outer plenum cavity 326. Figure 6 In the example of FIG. 5 , the outer wall 328 forming the outer wall of the first outer air-filled cavity 324 and the second outer air-filled cavity 326 is not shown.

[0082] Figure 7 A three-dimensional cross-sectional view of an exemplary implementation of a base portion 184 including a showerhead 109. In various implementations, a coolant can both cool the showerhead 109 and can be injected into the process chamber 102. Specifically, holes 704 can be formed through the panel 185 to the coolant channel 336 to allow coolant to flow from the coolant channel 336 into the process chamber 102. In various implementations, the partition member 404 can be omitted so that the first outer plenum cavity 324 is not separated from the second outer plenum cavity 326, and the showerhead 109 includes one outer plenum cavity. In such an embodiment, the outlet 340 can be omitted and can be replaced by one or more additional coolant inlets.

[0083] For illustration purposes only, the length of the coolant passage 336 has been truncated again. The coolant passage 336 extends to the radially outer edge of the spray head 109, where the coolant passage 336 opens into the first outer plenum cavity 324 and the second outer plenum cavity 326. Figure 7 In the example of FIG. 5 , the outer wall 328 forming the outer wall of the first outer air-filled cavity 324 and the second outer air-filled cavity 326 is not shown.

[0084] Figure 8A flow chart depicting an exemplary method for cooling the showerhead 109 during deposition of a film on a substrate and during a purge of the process chamber 102 is included. Control may begin by placing a substrate on the substrate support 106 within the process chamber 102. At 804, the temperature controller 142 controls the coolant assembly 186 to provide coolant to the showerhead 109 at a predetermined temperature (e.g., approximately 380 degrees Celsius or less) for deposition of a film (e.g., silicon nitride) on the substrate.

[0085] At 808, the system controller 160 may determine whether the temperature of the coolant is less than or equal to a predetermined temperature. If 808 is true, control may continue to 812. If 808 is false, control may return to 804 to continue cooling the spray head 109. In various implementations, 808 may be omitted.

[0086] At 812, deposition of a film on the substrate is initiated, and the temperature controller 142 continues to control the coolant assembly 186 to provide a coolant at a predetermined temperature to the showerhead 109 for deposition of the film on the substrate. At 816, the system controller 160 controls the gas delivery system 130 to provide one or more precursor gases (e.g., silane (SiH4) and nitrogen-containing gases (e.g., molecular nitrogen (N2), nitrous oxide (N2O))) to the processing chamber 102 via the showerhead 109 to deposit a film on the substrate. One or more inert gases (carrier gases) (e.g., argon or helium) may also be provided to the processing chamber 102 via the showerhead 109 to deposit a film on the substrate.

[0087] At 820, the system controller 160 controls the RF generation system 120 to energize a plasma within the process chamber 102 to deposit a film (e.g., silicon nitride) on the substrate. By cooling the showerhead 109 and the faceplate 185 during deposition, a thicker film layer can be formed on the faceplate 185 without the film peeling off the showerhead 109. This allows more substrates to be processed within the process chamber 102 between successive purge cycles of the process chamber 102.

[0088] At 824, the system controller 160 may open the valve 150 and start the pump 152 to purge the gas from the processing chamber 102. In various implementations, 824 may be omitted or may be performed after deposition is complete.

[0089] At 828, the system controller 160 determines whether the deposition of the film on the substrate is complete. For example, the system controller 160 may determine whether the time period since the deposition of the film on the substrate began (e.g., since the first instance of 812) is greater than a predetermined deposition time period. If 828 is true, control continues to 832. If 828 is false, control may return to 812 to continue deposition.

[0090] At 832, the robot 170 or another robot can remove the substrate from the processing chamber 102. The robot 170 or another robot can move the substrate to another processing chamber for additional processing. Alternatively, additional processing can be performed on the substrate within the processing chamber 102.

[0091] At 836 , the system controller 160 may increment the count value (eg, add 1 to the count value). Thus, the count value corresponds to the number of substrates that have been deposited on the processing chamber 102 since the processing chamber 102 was last purged to remove the film from the processing chamber 102 .

[0092] At 840, the system controller 160 may determine whether the count value is less than a predetermined value. The predetermined value may be corrected and is an integer greater than one. The predetermined value corresponds to the number of substrates to be processed (having films deposited on the substrates) between consecutive cleaning cycles of the processing chamber 102. If 840 is true, the robot 170 or another robot may load the next substrate onto the substrate support 106 within the processing chamber 102 at 842, and control may return to 804 to start deposition of the film on the next substrate. If 840 is false, control may continue to 844. In various implementations, additionally or alternatively, a cleaning cycle of the processing chamber 102 may be performed every predetermined time period and / or in response to user input to perform cleaning.

[0093] At 844, the temperature controller 142 controls the coolant assembly 186 to provide coolant to the spray head 109 at a predetermined temperature for purging. At 848, the system controller 160 may determine whether the temperature of the coolant is less than or equal to the predetermined temperature. If 848 is true, control continues to 852. If 848 is false, control may return to 844 to continue cooling the spray head 109. In various implementations, 848 may be omitted.

[0094] At 852, the purge is initiated, and the temperature controller 142 continues to control the coolant assembly 186 for the purge to provide the coolant at a predetermined temperature to the showerhead 109. At 856, the system controller 160 controls the gas delivery system 130 to provide one or more purge gases (e.g., nitrogen trifluoride (NF3)) to the processing chamber 102 through the showerhead 109 to purge the film (e.g., silicon nitride) from within the processing chamber 102 and the showerhead 109.

[0095] At 860, the system controller 160 also controls the RF generation system 120 to energize plasma within the processing chamber 102 to sweep the film (e.g., silicon nitride) from the processing chamber 102. By cooling the showerhead 109 to a predetermined temperature during the sweep, changes (e.g., roughness and emissivity) in the showerhead 109 caused by the sweep are reduced. This minimizes wear on the showerhead and allows the showerhead 109 to be used for a longer period of time before the showerhead 109 is replaced.

[0096] The film may vaporize and may be evacuated from the process chamber 102 via operation of the pump 152. At 864, the system controller 160 may open the valve 150 and start the pump 152 to purge the vaporized film from the process chamber 102. In various implementations, 864 may be omitted or may be performed after the purge is complete.

[0097] At 868, the system controller 160 determines whether the purge is complete. For example, the system controller 160 may determine whether the time period since the purge began (e.g., since the first event of 852) is greater than a predetermined purge time period. If 868 is true, control may transfer to 842, as described above. If 868 is false, control may return to 852 to continue the purge of the processing chamber 102.

[0098] The foregoing description is merely illustrative in nature and is by no means intended to limit the present disclosure, its application or use. The broad teachings of the present disclosure can be implemented in various forms. Therefore, although the present disclosure includes specific examples, the true scope of the present disclosure should not be so limited, because when studying the drawings, the specification and the appended claims, other modifications will become apparent. It should be understood that one or more steps in the method can be performed in different orders (or simultaneously) without changing the principles of the present disclosure. In addition, although each embodiment is described above as having certain features, any one or more of those features described relative to any embodiment of the present disclosure can be implemented in the features of any other embodiment and / or combined with the features of any other embodiment, even if the combination is not explicitly described. In other words, the described embodiments are not mutually exclusive, and the replacement of one or more embodiments with each other remains within the scope of the present disclosure.

[0099] Various terms are used to describe the spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.), including "connected," "engaged," "coupled," "adjacent," "next to," "on top of," "above," "below," and "disposed." Unless the relationship between a first and a second element is explicitly described as "direct," when such a relationship is described in the above disclosure, the relationship can be a direct relationship, in which there are no other intervening elements between the first and second elements, but can also be an indirect relationship, in which there are one or more intervening elements (spatially or functionally) between the first and second elements. As used herein, the phrase "at least one of A, B, and C" should be interpreted to mean a logical (A or B or C), using a non-exclusive logical OR, and should not be interpreted to mean "at least one of A, at least one of B, and at least one of C."

[0100] In some implementations, the controller is part of a system, which can be part of the above examples. Such a system can include a semiconductor processing device, which includes one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems can be integrated with electronic devices for controlling their operations before, during, and after the processing of semiconductor wafers or substrates. The electronic device can be referred to as a "controller", which can control various components or subcomponents of one or more systems. Depending on the processing requirements and / or the type of system, the controller can be programmed to control any process disclosed herein, including the delivery of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer in and out tools and other transfer tools and / or load locks connected to or connected to a specific system through an interface.

[0101] In general, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable sweep operations, enable endpoint measurements, and the like. The integrated circuit may include a chip in the form of firmware that stores program instructions, a digital signal processor (DSP), a chip defined as an application specific integrated circuit (ASIC), and / or one or more microprocessors, or a microcontroller that executes program instructions (e.g., software). The program instructions may be instructions sent to the controller in the form of various individual settings (or program files) that define operating parameters for performing a particular process on or for a semiconductor wafer or system. In some embodiments, the operating parameters may be part of a recipe defined by a process engineer to accomplish one or more processing steps during the manufacture of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0102] In some implementations, the controller may be part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller may be in the "cloud" or all or part of a wafer fab host system that may allow remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of a manufacturing operation, check the history of past manufacturing operations, check trends or performance criteria for multiple manufacturing operations, change parameters of a current process, set processing steps to follow the current process, or start a new process. In some examples, a remote computer (e.g., a server) may provide a process recipe to the system via a network (which may include a local network or the Internet). The remote computer may include a user interface that enables input or programming of parameters and / or settings, which are then sent from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control. Thus, as described above, the controller may be distributed, for example, by including one or more discrete controllers networked together and working toward a common purpose (e.g., the process and control described herein). An example of a distributed controller for such a purpose is one or more integrated circuits on a chamber communicating with one or more integrated circuits remotely (e.g., at a platform level or as part of a remote computer), which combine to control the process on the chamber.

[0103] Example systems may include, but are not limited to, plasma etch chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, sweep chambers or modules, chamfer edge etch chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etch (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing system that may be associated with or used in the manufacture and / or preparation of semiconductor wafers.

[0104] As described above, depending on one or more processing steps to be performed by the tool, the controller can communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the factory, a host computer, another controller, or tools used in material transport to transport wafer containers to and from tool locations and / or load ports in a semiconductor manufacturing facility.

Claims

1. A showerhead for a substrate processing chamber, the showerhead comprising: a rod portion including a first end and a second end and comprising a first diameter; a base portion connected to the second end of the stem portion and comprising a second diameter greater than the first diameter; Inner wall; an inner gas-filled cavity between said inner walls; The base portion includes a panel having a first surface and a second surface, the second surface being opposite to the first surface; an aperture through the panel extending from the first surface to the second surface; a first inlet fluidly connected to the inner gas-filled chamber; outer wall; a first outer plenum chamber within the stem portion and the base portion and defined by the inner wall and the outer wall; a second outer plenum chamber within the stem portion and the base portion and defined by the inner wall and the outer wall; Coolant channels which: fluidly connecting the first outer air-filled cavity with the second outer air-filled cavity; disposed within the panel and between the first and second surfaces; and fluidly isolated from the aperture, wherein each of the coolant passages comprises a plurality of vertically displaced coolant passages; and A second inlet is fluidly connected to the first outer air-filled cavity.

2. The spray head according to claim 1, further comprising a second hole, wherein the second hole: extending from the second surface to the coolant passage; being fluidly connected to the coolant passage; and does not extend to the first surface. 3 . The showerhead of claim 1 , wherein a direction in which the coolant channel passes through the panel is perpendicular to a second direction in which the hole passes through the panel.

4. The showerhead of claim 1, wherein each of the coolant channels is parallel to each of the other of the coolant channels.

5. The spray head of claim 1, further comprising an outlet fluidly connected to the second outer air-filled chamber. 6 . The spray head according to claim 1 , further comprising a partition member disposed between the inner wall and the outer wall and fluidically isolating the first outer air-filled cavity from the second outer air-filled cavity.

7. The showerhead of claim 2, wherein the second hole is parallel to the hole through the face plate.

8. The showerhead of claim 2, wherein the second aperture is fluidly isolated from the aperture through the faceplate.

9. A substrate processing system, comprising: the substrate processing chamber; The showerhead according to claim 1, wherein the showerhead is disposed in the substrate processing chamber; a coolant assembly configured to provide coolant to the second inlet; as well as A temperature controller is configured to control the coolant assembly to cool the coolant to less than or equal to a predetermined temperature during plasma enhanced chemical vapor deposition (PECVD) of a film on a substrate in the substrate processing chamber.

10. The substrate processing system of claim 9, wherein the membrane is silicon nitride (SiN).

11. The substrate processing system of claim 10 further comprising a system controller configured to flow silane and a gas comprising nitrogen into the substrate processing chamber via the first inlet, the inner plenum, and the aperture for the PECVD of the film on the substrate.

12. The substrate processing system of claim 11, wherein the system controller is configured to generate a plasma between the showerhead and the substrate.

13. The substrate processing system of claim 9, wherein the temperature controller is further configured to control the coolant assembly to cool the coolant to less than or equal to the predetermined temperature during a sweep of a film deposited on a substrate via plasma enhanced chemical vapor deposition (PECVD) from within the substrate processing chamber.

14. The substrate processing system of claim 13, wherein the membrane is silicon nitride (SiN).

15. The substrate processing system of claim 13, further comprising a system controller configured to flow nitrogen trifluoride (NF3) into the substrate processing chamber via the first inlet, the inner plenum, and the aperture during the purge.

16. The substrate processing system of claim 15, wherein the faceplate is comprised of aluminum.

17. A showerhead for a substrate processing chamber, the showerhead comprising: a rod portion including a first end and a second end and comprising a first diameter; a base portion connected to the second end of the stem portion and comprising a second diameter greater than the first diameter; Inner air-filled cavity; The base portion includes a panel having a first surface and a second surface, the second surface being opposite to the first surface; an aperture through the panel from the first surface to the second surface; a first inlet fluidly connected to the inner gas-filled chamber; a first outer plenum chamber within the stem portion and the base portion and disposed radially outward of the inner plenum chamber; a second outer plenum chamber within the stem portion and the base portion and disposed radially outward of the inner plenum chamber; Coolant channels which: fluidly connecting the first outer air-filled cavity with the second outer air-filled cavity; disposed within the panel and between the first surface and the second surface; and does not intersect said hole through said panel, wherein each of the coolant passages comprises a plurality of vertically displaced coolant passages; a second inlet fluidly connected to the first outer air-filled chamber; and An outlet is fluidly connected to the second outer air-filled chamber.

18. A substrate processing system comprising: the substrate processing chamber; The showerhead according to claim 17, wherein the showerhead is disposed in the substrate processing chamber and the faceplate is formed of aluminum; a coolant assembly configured to input a coolant into the second inlet and receive the coolant from the outlet; and a temperature controller configured to control the coolant assembly to cool the coolant to less than or equal to a predetermined temperature during: during plasma enhanced chemical vapor deposition (PECVD) of a film on a substrate within the substrate processing chamber; and During sweeping of the film from within the substrate processing chamber.

19. The substrate processing system of claim 18, further comprising a system controller, wherein the system controller is configured to: for the PECVD of the film on the substrate, flowing silane and a gas comprising nitrogen into the substrate processing chamber via the first inlet, the inner plenum, and the aperture; and During the purge, nitrogen trifluoride (NF3) is flowed into the substrate processing chamber via the first inlet, the inner plenum, and the aperture, The film is silicon nitride (SiN).

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