LED chip and manufacturing method thereof, LED packaging device, and display device

Abstract

This invention provides an LED chip and its fabrication method, an LED packaging device, and a display device, comprising: a substrate; a chip body disposed on one side of the substrate; a semiconductor layer disposed on the chip body, the semiconductor layer including an N-type semiconductor layer and a P-type semiconductor layer; a first electrode layer disposed on the side of the semiconductor layer facing away from the substrate; a second electrode layer disposed on the side of the first electrode layer facing away from the substrate, the second electrode layer completely covering the first electrode layer; and a third electrode layer disposed on the side of the second electrode layer facing away from the first electrode layer. The second electrode layer reacts with a target solder that penetrates the third electrode layer to form a weld structure. This allows the third electrode layer to react with the target solder to form a weld layer, while simultaneously the target solder penetrating the third electrode layer reacts with the second electrode layer to form a stable weld layer. Without increasing the thickness of the third electrode layer, the target solder reacts with both the second and third electrode layers to form a stable weld structure, thereby enhancing the reliability of the weld.

Description

Technical Field

[0001] The embodiments of the present invention relate to, but are not limited to, the field of LED chips, and specifically, relate to, but are not limited to, LED chips and manufacturing methods thereof, LED packaging devices, and display devices. Background Art

[0002] LED (Light Emitting Diode) is a semiconductor device that uses energy released when carriers recombine to generate light. LED chips have many advantages such as low power consumption, pure color, long life, small size, fast response time, energy saving and environmental protection.

[0003] At present, in the related technology, LED chips are electroplated with Au (gold) and other metals as electrode layers, which are welded with solder to form a welding layer to play an electrical conductivity role. Due to the high cost of metals such as Au, the electrode layer is set to a thin layer. Therefore, the welding layer formed by welding the electrode layer of the LED chip and the solder is also a very thin welding layer. As the working time of the LED chip increases, voids will be formed in the welding layer formed by the electrode structure of the LED chip and the solder in the LED chip structure, resulting in a gradual loss of welding reliability, and finally causing the LED chip to be electrically open and lose its working function. Summary of the invention

[0004] The LED chip and its manufacturing method, LED packaging device, and display device provided by the embodiments of the present invention mainly solve the technical problem that in the related technology, the welding layer formed by the LED electrode and the solder is prone to form voids, resulting in low welding reliability.

[0005] In order to solve the above technical problems, an embodiment of the present invention provides an LED chip, comprising:

[0006] A substrate, a chip body disposed on one side of the substrate;

[0007] The chip body is provided with a semiconductor layer, and the semiconductor layer includes: an N-type semiconductor layer and a P-type semiconductor layer;

[0008] A first electrode layer is disposed on the side of the semiconductor layer facing away from the substrate;

[0009] A second electrode layer is disposed on the side of the first electrode layer facing away from the substrate, and the second electrode layer completely covers the first electrode layer;

[0010] A third electrode layer is disposed on a side of the second electrode layer facing away from the first electrode layer. The second electrode layer reacts with a target solder that penetrates the third electrode layer to form a welding structure.

[0011] Optionally, the LED chip further includes a reflective layer disposed between the semiconductor layer and the first electrode layer;

[0012] Optionally, the thickness of the second electrode layer is 0.4um-0.6um;

[0013] Optionally, the target solder is a tin-containing solder, and the second electrode layer is a metal electrode layer capable of reacting with the tin-containing solder;

[0014] Optionally, the thickness of the third electrode layer is 0.5um-0.7um;

[0015] Furthermore, this embodiment also provides a method for manufacturing the LED chip as described above, comprising:

[0016] forming a chip body on one side of the substrate;

[0017] The chip body comprises: a semiconductor layer, wherein the semiconductor layer comprises: an N-type semiconductor layer and a P-type semiconductor layer;

[0018] Disposing a first electrode layer on a side of the semiconductor layer away from the substrate;

[0019] Disposing a second electrode layer on a side of the first electrode layer away from the substrate, wherein the second electrode layer completely covers the first electrode layer;

[0020] A third electrode layer is arranged on a side of the second electrode layer facing away from the first electrode layer.

[0021] Optionally, providing a first electrode layer on a side of the semiconductor layer facing away from the substrate includes:

[0022] Disposing a reflective layer on a side of the semiconductor layer facing away from the substrate;

[0023] Disposing the first electrode layer on a side of the reflective layer away from the semiconductor layer;

[0024] Optionally, the material of the reflective layer includes at least one of ITO, Ag, Au, Al, Cr, Ni and Ti.

[0025] Furthermore, an embodiment of the present invention also provides an LED packaging device, including the LED chip as described above.

[0026] Furthermore, an embodiment of the present invention also provides a display device, comprising the LED chip as described above.

[0027] The LED chip provided according to the embodiment of the present invention comprises: a substrate, a chip body arranged on one side of the substrate; a semiconductor layer is arranged on the chip body, and the semiconductor layer comprises: an N-type semiconductor layer and a P-type semiconductor layer; a first electrode layer is arranged on the side of the semiconductor layer away from the substrate; a second electrode layer is arranged on the side of the first electrode layer away from the substrate, and the second electrode layer completely covers the first electrode layer; a third electrode layer is arranged on the side of the second electrode layer away from the first electrode layer, and the second electrode layer reacts with the target solder that penetrates the third electrode layer to form a welding structure. By adding a second electrode layer that can react with the target solder that penetrates the third electrode layer between the first electrode layer and the third electrode layer, the third electrode layer reacts with the target solder to obtain a welding layer, and the target solder that penetrates the third electrode layer reacts with the second electrode layer to obtain a stable welding layer. Without increasing the thickness of the third electrode layer, the target solder reacts with the second electrode layer and the third electrode layer to form a stable welding structure, thereby enhancing the reliability of welding and avoiding the problem that the welding layer formed by the LED electrode and the solder is easy to form voids, resulting in low welding reliability.

[0028] Other features and corresponding beneficial effects of the present invention are described in the latter part of the specification, and it should be understood that at least part of the beneficial effects become obvious from the description in the specification of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 A schematic diagram of the basic structure of an existing LED chip provided in Embodiment 1 of the present invention;

[0030] Figure 2 A schematic diagram of the basic structure of an LED chip provided in Embodiment 1 of the present invention;

[0031] Figure 3 A schematic diagram of the basic structure of another LED chip provided in the first embodiment of the present invention;

[0032] Figure 4 A schematic diagram of the basic process of the method for manufacturing an LED chip provided in the second embodiment of the present invention;

[0033] Figure 5 This is a schematic diagram of the basic structure of an LED chip provided in Embodiment 3 of the present invention. DETAILED DESCRIPTION

[0034] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the embodiments of the present invention are further described in detail below through specific implementation methods combined with the accompanying drawings. It should be understood that the specific embodiments described here are only used to explain the present invention and are not used to limit the present invention.

[0035] Embodiment 1:

[0036] At present, in the related technology, in the LED chip structure, such as Figure 1 As shown, by setting a first electrode layer 3 on the surface of the semiconductor layer 2, wherein the first electrode layer 3 has poor fusion with the solder, it is necessary to set a third electrode layer 5 on the side of the first electrode layer 3 away from the substrate 1, and form a welding layer through the third electrode layer 5 and the solder, wherein the third electrode layer 5 is usually welded with a metal material such as Au (gold) and the solder to form a welding layer, which plays a role in electrical conduction. Since metals such as Au are expensive, the third electrode layer 5 is set as a thin layer, and the welding layer formed by welding the third electrode layer 5 and the solder is also a very thin welding layer. As the working time of the LED chip increases, the welding layer formed by the third electrode layer 5 and the solder in the LED chip structure will form voids, resulting in a gradual loss of welding reliability, and finally causing the LED chip to be electrically open.

[0037] In order to solve the problem in the related art that the solder layer formed by the LED electrode and the solder is prone to form voids, resulting in low soldering reliability, please refer to Figure 2 The present embodiment provides an LED chip, which includes: a substrate 1, a chip body arranged on one side of the substrate 1; the chip body is provided with a semiconductor layer 2, and the semiconductor layer 2 includes: an N-type semiconductor layer 2 and a P-type semiconductor layer 2; a first electrode layer 3 is provided on the side of the semiconductor layer 2 away from the substrate 1; a second electrode layer 4 is provided on the side of the first electrode layer 3 away from the substrate 1, and the second electrode layer 4 completely covers the first electrode layer 3; a third electrode layer 5 is provided on the side of the second electrode layer 4 away from the first electrode layer 3, and the second electrode layer 4 reacts with a target solder that penetrates the third electrode layer 5 to form a welding structure. The LED chip provided in the present embodiment adds a second electrode layer 4 between the first electrode layer 3 and the third electrode layer 5 that can react with the target solder that penetrates the third electrode layer 5, so that the third electrode layer 5 and the target solder and the second electrode layer 4 and the target solder react respectively to obtain welding layers, and then the target solder, the second electrode layer 4 and the third electrode layer 5 form a stable welding structure. Without increasing the thickness of the third electrode layer 5, the reliability of welding is enhanced, and the problem of low welding reliability caused by the welding layer formed by the LED electrode and the solder being prone to forming voids is avoided.

[0038] In some examples of this embodiment, the material of the substrate 1 includes, but is not limited to: one or more of sapphire aluminum oxide, silicon carbide, silicon, gallium nitride, gallium arsenide, gallium phosphide, indium phosphide, aluminum gallium indium phosphide, and the like.

[0039] In some examples of this embodiment, the semiconductor layer 2 is a gallium nitride-based semiconductor layer 2, that is, the N-type semiconductor layer 2 and the P-type semiconductor layer 2 are both gallium nitride-based semiconductor layers 2; it should be understood that the semiconductor layer 2 provided in the embodiment of the present application can also be made of other materials, and this application does not make any specific restrictions on this.

[0040] It should be understood that the LED chip also includes structural layers such as a quantum well layer 7 and a conductive layer, which will not be described in detail here.

[0041] In some examples of this embodiment, the LED chip further includes a reflective layer 6 disposed between the semiconductor layer 2 and the first electrode layer 3. Figure 3 As shown, it should be understood that the reflective layer 6 is formed on the surface of the semiconductor layer 2 away from the substrate 1 by a deposition process, and the reflective layer 6 is made of one or more of ITO, Ag, Au, Al, Cr, Ni and Ti. The light emitted by the LED chip from the quantum well layer 7 is partly emitted directly from the side of the substrate 1, and partly emitted from the side away from the substrate 1, thereby reducing the light extraction efficiency. At present, in the related art, a distributed Bragg reflector (DBR) layer is formed on the side away from the substrate 1 to reflect the light on the side away from the substrate 1. However, the equipment for forming the DBR layer is expensive and the process is complicated. In some examples, the LED chip forms a reflective layer 6 on the surface of the semiconductor layer 2 to reflect the light on the side away from the substrate 1 back to the side of the substrate 1, thereby improving the light extraction efficiency of the chip and then improving the brightness of the chip.

[0042] In some examples of the present embodiment, a filling metal layer is deposited on the surface of the semiconductor layer 2 away from the substrate 1 by electron beam evaporation, magnetron sputtering, electroplating or chemical plating process to form a first electrode layer 3. When a reflective layer 6 exists on the surface of the LED chip semiconductor layer 2 away from the substrate 1, a filling metal layer is deposited on the surface of the reflective layer 6 away from the substrate 1 to form the first electrode layer 3. The thickness of the first electrode layer 3 is 0.2um-0.4um. The material of the first electrode layer 3 includes but is not limited to: a metal such as Cr, Ti, Al, Ni, Pt or a combination of multiple layers of metals, thereby forming the first electrode layer 3. Preferably, the thickness of the first electrode layer 3 is 0.2um.

[0043] In some examples of the present embodiment, a filling metal layer is deposited on the side of the first electrode layer 3 away from the substrate 1 by electron beam evaporation, magnetron sputtering, electroplating or chemical plating to form a second electrode layer 4, wherein the thickness of the second electrode layer 4 is 0.4um-0.6um, preferably, the thickness of the second electrode layer 4 is 0.4um; it should be noted that the target solder is a tin-containing solder, and the second electrode layer 4 is a metal electrode layer that can react with the tin-containing solder. The material of the target solder includes but is not limited to one or more mixtures of tin, tin-silver-copper, tin-bismuth-copper, lead-tin, etc., and the material of the second electrode layer 4 includes but is not limited to Cr, Ti, Ni, Pt, CU, etc. that react with the target The solder is one of the metals that can form a stable alloy structure. For example, the target solder is a tin paste solder, and the second electrode layer 4 is a Cu (copper) metal layer. At this time, the second electrode layer 4 and the target solder that penetrates the third electrode layer form a stable Cu6Sn5 welding layer. Without increasing the thickness of the third electrode layer 5, the welding stability is enhanced and the long-term operation reliability of the LED chip is improved. At the same time, the second electrode layer 4 completely covers the first electrode layer 3, avoiding the problem that the target solder penetrates into the first electrode layer 3 and affects the conductive effect. At the same time, the third electrode layer 5 is not changed, which avoids the electrical conductivity of the third electrode layer 5 from being affected, thereby ensuring the conductive efficiency of the third electrode layer 5.

[0044] In some examples of this embodiment, a filling metal layer is deposited on the side of the second electrode layer 4 away from the substrate 1 by electron beam evaporation, magnetron sputtering, electroplating or chemical plating process to form a third electrode layer 5, wherein the thickness of the third electrode layer 5 is 0.5um-0.7um, and the material of the third electrode layer 5 includes but is not limited to: AU, Pt and other metals or a combination of multiple metals, thereby forming the third electrode layer 5, preferably, the thickness of the third electrode layer 5 is 0.5um.

[0045] The LED chip provided in this embodiment includes: a substrate, a chip body arranged on one side of the substrate; a semiconductor layer is arranged on the chip body, and the semiconductor layer includes: an N-type semiconductor layer and a P-type semiconductor layer; a first electrode layer is arranged on the side of the semiconductor layer away from the substrate; a second electrode layer is arranged on the side of the first electrode layer away from the substrate, and the second electrode layer completely covers the first electrode layer; a third electrode layer is arranged on the side of the second electrode layer away from the first electrode layer, and the second electrode layer reacts with the target solder that penetrates the third electrode layer to form a welding structure. By adding a second electrode layer that can react with the target solder that penetrates the third electrode layer between the first electrode layer and the third electrode layer, the third electrode layer reacts with the target solder to obtain a welding layer, and the target solder that penetrates the third electrode layer reacts with the second electrode layer to obtain a stable welding layer. Without increasing the thickness of the third electrode layer, the target solder reacts with the second electrode layer and the third electrode layer to form a stable welding structure, thereby enhancing the reliability of welding and avoiding the problem that the welding layer formed by the LED electrode and the solder is prone to form voids, resulting in low welding reliability.

[0046] Embodiment 2:

[0047] This embodiment provides a method for manufacturing the LED chip as described above, such as Figure 4 As shown, it includes but is not limited to:

[0048] S401, forming a chip body on one side of the substrate;

[0049] In some examples of this embodiment, the material of the substrate includes, but is not limited to, one or more of sapphire aluminum oxide, silicon carbide, silicon, gallium nitride, gallium arsenide, gallium phosphide, indium phosphide, aluminum gallium indium phosphide, etc.; then the chip body is grown on the substrate using MOCVD (metal organic chemical vapor deposition equipment). For example, MOCVD is used to epitaxially grow an N-type semiconductor layer, a quantum well layer, and a P-type semiconductor layer on the substrate in sequence; or MOCVD is used to epitaxially grow a P-type semiconductor layer, a quantum well layer, and an N-type semiconductor layer on the substrate in sequence; wherein the P-type semiconductor layer and the N-type semiconductor layer are collectively referred to as semiconductor layers.

[0050] S402, disposing a first electrode layer on a side of the semiconductor layer away from the substrate;

[0051] In some examples of the present embodiment, a first electrode layer is provided on a side of the semiconductor layer away from the substrate. For example, when an N-type semiconductor layer, a quantum well layer and a P-type semiconductor layer are grown sequentially on the substrate, an etching process is used to peel off part of the quantum well layer and the P-type semiconductor layer to expose part of the N-type semiconductor layer, and a first electrode layer is formed on the surface of the P-type semiconductor layer and the exposed N-type semiconductor layer on one side of the substrate away from the deposited filling metal layer by electron beam evaporation, magnetron sputtering, electroplating or chemical plating process; or when a P-type semiconductor layer, a quantum well layer and an N-type semiconductor layer are grown sequentially on the substrate, an etching process is used to peel off part of the quantum well layer and the N-type semiconductor layer to expose part of the P-type semiconductor layer, and a filling metal layer is deposited on the surface of the N-type semiconductor layer and the exposed P-type semiconductor layer on the side away from the substrate to form a first electrode layer; wherein the thickness of the first electrode layer is 0.2um-0.4um, and the material of the first electrode layer includes but is not limited to: a metal such as Cr, Ti, Al, Ni, Pt or a combination of multiple metal layers.

[0052] It should be understood that the etching process provided in the embodiment of the present application can be a dry etching process or a wet etching process. The present application does not impose any specific limitation on this and needs to be selected according to the actual application.

[0053] It should be understood that, in some examples, providing the first electrode layer on the side of the semiconductor layer away from the substrate includes: providing a reflective layer on the side of the semiconductor layer away from the substrate; providing the first electrode layer on the side of the reflective layer away from the semiconductor layer, for example, using an etching process to expose part of the N-type semiconductor layer, and then using a deposition process to form the reflective layer on the surface of the P-type semiconductor layer and the exposed part of the N-type semiconductor layer away from the substrate, or using an etching process to expose part of the P-type semiconductor layer, and then using a deposition process to form the reflective layer on the surface of the N-type semiconductor layer and the exposed part of the P-type semiconductor layer away from the substrate, wherein the reflective layer is made of one or more of ITO, Ag, Au, Al, Cr, Ni and Ti. It should be understood that at this time, a filling metal layer is deposited on the surface of the reflective layer away from the substrate to form the first electrode layer.

[0054] S403, disposing a second electrode layer on a side of the first electrode layer away from the substrate, wherein the second electrode layer completely covers the first electrode layer;

[0055] In some examples of the present embodiment, a filling metal layer is deposited on the side of the first electrode layer away from the substrate to form a second electrode layer by electron beam evaporation, magnetron sputtering, electroplating or chemical plating process, wherein the thickness of the second electrode layer is 0.4um-0.6um. It should be noted that in some examples, the target solder is a tin-containing solder, and the second electrode layer is a metal electrode layer that can react with the tin-containing solder. For example, the target solder is a solder paste solder, and the second electrode layer is a Cu (copper) metal layer. At this time, the second electrode layer and the target solder that penetrates the third electrode layer form a stable Sn5Cu6 welding layer, which enhances the stability of the welding without increasing the thickness of the third electrode layer, and improves the long-term working reliability of the LED chip; at the same time, the second electrode layer completely covers the first electrode layer, avoiding the problem of the target solder penetrating into the first electrode layer, which affects the conductive effect.

[0056] S404, disposing a third electrode layer on a side of the second electrode layer away from the first electrode layer;

[0057] In some examples of this embodiment, a third electrode layer is formed by depositing a filling metal layer on the side of the second electrode layer away from the substrate through electron beam evaporation, magnetron sputtering, electroplating or chemical plating process, wherein the thickness of the third electrode layer is 0.5um-0.7um, and the material of the third electrode layer includes but is not limited to: a metal such as AU or an alloy combination of the metal, thereby forming the third electrode layer.

[0058] The manufacturing method of the LED chip provided in the present embodiment forms a chip body on one side of a substrate; the chip body includes: a semiconductor layer, the semiconductor layer includes: an N-type semiconductor layer and a P-type semiconductor layer; a first electrode layer is arranged on the side of the semiconductor layer away from the substrate; a second electrode layer is arranged on the side of the first electrode layer away from the substrate, and the second electrode layer completely covers the first electrode layer; a third electrode layer is arranged on the side of the second electrode layer away from the first electrode layer; in the LED chip manufactured by this method, a second electrode layer that can react with a target solder that penetrates the third electrode layer is added between the first electrode layer and the third electrode layer, so that the third electrode layer reacts with the target solder to obtain a welding layer, and the target solder that penetrates the third electrode layer reacts with the second electrode layer to obtain a stable welding layer. Without increasing the thickness of the third electrode layer, the target solder reacts with the second electrode layer and the third electrode layer respectively to form a stable welding structure, thereby enhancing the reliability of welding and avoiding the problem that the welding layer formed by the LED electrode and the solder is prone to form voids, resulting in low welding reliability.

[0059] Embodiment three:

[0060] In order to better understand the present invention, this embodiment provides a more specific example for explanation. Figure 5As shown, the LED chip includes but is not limited to: a substrate 1, an N-type semiconductor layer 21, a quantum well layer 7 and a P-type semiconductor layer 22 epitaxially grown in sequence on the substrate 1; and an etching process is used to peel off part of the quantum well layer 7 and the P-type semiconductor layer 22 to expose part of the N-type semiconductor layer 21, and a deposition process is used to form a reflective layer 6 on the surface of the P-type semiconductor layer 22 and the exposed N-type semiconductor layer 21 away from the substrate 1.

[0061] The substrate 1 is made of a silicon-free structure formed of titanium dioxide, the N-type semiconductor layer 21 and the P-type semiconductor layer 22 are both gallium nitride-based semiconductor layers, and the reflective layer 6 is made of ITO.

[0062] In some examples, the LED chip also includes forming a first electrode layer 3 by depositing and filling Cr on the surface of the reflective layer 6 away from the substrate 1 through an electroplating process, wherein the thickness of the first electrode layer 3 is 0.2um; after the first electrode layer 3 is formed, Cu is deposited on the surface of the first electrode layer 3 away from the semiconductor side to form a second electrode layer 4, wherein the thickness of the second electrode layer 4 is 0.4um; after the second electrode layer 4 is formed, an Au layer is deposited on the upper surface of the second electrode layer 42 to form a third electrode layer 5, wherein the thickness of the third electrode layer 5 is 0.5um.

[0063] The LED chip provided in this embodiment includes: a substrate 1, an N-type semiconductor layer 21, a quantum well layer 7 and a P-type semiconductor layer 22, a reflective layer 6, which are epitaxially grown in sequence on the substrate 1, and a first electrode layer 3 is arranged on the side of the semiconductor layer away from the substrate 1; a second electrode layer 4 is arranged on the side of the first electrode layer 3 away from the substrate 1, and the second electrode layer 4 completely covers the first electrode layer 3; a third electrode layer 5 is arranged on the side of the second electrode layer 4 away from the first electrode layer 3; by adding the second electrode layer 4 that can react with the target solder that penetrates the third electrode layer 5 between the first electrode layer 3 and the third electrode layer 5, so that the third electrode layer 5 reacts with the target solder to obtain a welding layer, and the target solder that penetrates the third electrode layer 5 reacts with the second electrode layer 4 to obtain a stable welding layer. Without increasing the thickness of the third electrode layer 5, the target solder reacts with the second electrode layer 4 and the third electrode layer 5 respectively to form a stable welding structure, thereby enhancing the reliability of welding and avoiding the problem that the welding layer formed by the LED electrode and the solder is prone to form voids, resulting in low welding reliability.

[0064] Furthermore, an embodiment of the present invention also provides an LED packaging device, including but not limited to the LED chip described in the above embodiments.

[0065] Furthermore, an embodiment of the present invention also provides a display device, including but not limited to the LED chip described in the above embodiments.

[0066] It should be understood that the LED provided in the above embodiments can be applied to various light-emitting fields, for example, it can be made into a backlight module for display backlight field (it can be a backlight module of a terminal such as a TV, a display, a mobile phone, etc.). At this time, it can be applied to a backlight module. In addition to being applicable to the display backlight field, it can also be applied to the key backlight field, the shooting field, the home lighting field, the medical lighting field, the decoration field, the automotive field, the transportation field, etc. When applied to the key backlight field, it can be used as a key backlight light source for mobile phones, calculators, keyboards, etc. with key devices; when applied to the shooting field, it can be made into a camera flash; when applied to the home lighting field, it can be made into a floor lamp, a table lamp, a lighting lamp, a ceiling lamp, a downlight, a projection lamp, etc.; when applied to the medical lighting field, it can be made into a surgical lamp, a low electromagnetic lighting lamp, etc.; when applied to the decoration field, it can be made into various decorative lamps, such as various colored lights, landscape lighting lamps, and advertising lamps; when applied to the automotive field, it can be made into car lights, car indicator lights, etc.; when applied to the transportation field, it can be made into various traffic lights, and it can also be made into various street lights. The above applications are merely several applications exemplified in this embodiment. It should be understood that the application of the LED in this embodiment is not limited to the several fields exemplified above.

[0067] It should be understood by those skilled in the art that all or some of the steps, systems, and functional modules / units in the above disclosed methods may be implemented as software (which may be implemented using computer program code executable by a computing device), firmware, hardware, and appropriate combinations thereof. In hardware implementations, the division between the functional modules / units mentioned in the above description does not necessarily correspond to the division of physical components; for example, a physical component may have multiple functions, or a function or step may be performed by several physical components in cooperation. Some or all physical components may be implemented as software executed by a processor, such as a central processing unit, a digital signal processor, or a microprocessor, or may be implemented as hardware, or may be implemented as an integrated circuit, such as an application-specific integrated circuit.

[0068] The above contents are further detailed descriptions of the embodiments of the present invention in combination with specific implementation methods, and it cannot be determined that the specific implementation of the present invention is limited to these descriptions. For ordinary technicians in the technical field to which the present invention belongs, several simple deductions or substitutions can be made without departing from the concept of the present invention, which should be regarded as falling within the scope of protection of the present invention.

Claims

1. An LED chip, characterized in that: include: A substrate, a chip body disposed on one side of the substrate; The chip body is provided with a semiconductor layer, and the semiconductor layer includes: an N-type semiconductor layer and a P-type semiconductor layer; A first electrode layer is disposed on the side of the semiconductor layer facing away from the substrate; A second electrode layer is disposed on the side of the first electrode layer facing away from the substrate, and the second electrode layer completely covers the first electrode layer; A third electrode layer is disposed on a side of the second electrode layer away from the first electrode layer, and the second electrode layer reacts with a target solder that penetrates the third electrode layer to form a welding structure; The third electrode layer reacts with the target solder and the second electrode layer reacts with the target solder to obtain welding layers, so that the target solder, the second electrode layer and the third electrode layer form a stable welding structure; The target solder is a tin-containing solder, and the third electrode layer is gold.

2. The LED chip according to claim 1, characterized in that: The LED chip further includes a reflective layer disposed between the semiconductor layer and the first electrode layer.

3. The LED chip according to any one of claims 1 to 2, characterized in that: The thickness of the second electrode layer is 0.4um-0.6um.

4. The LED chip according to claim 3, characterized in that: The second electrode layer is a metal electrode layer that can react with the tin-containing solder.

5. The LED chip according to claim 3, characterized in that: The thickness of the third electrode layer is 0.5um-0.7um.

6. A method for manufacturing an LED chip according to any one of claims 1 to 5, characterized in that: include: forming a chip body on one side of the substrate; The chip body comprises: a semiconductor layer, wherein the semiconductor layer comprises: an N-type semiconductor layer and a P-type semiconductor layer; Disposing a first electrode layer on a side of the semiconductor layer away from the substrate; Disposing a second electrode layer on a side of the first electrode layer away from the substrate, wherein the second electrode layer completely covers the first electrode layer; A third electrode layer is arranged on a side of the second electrode layer facing away from the first electrode layer.

7. The method for manufacturing an LED chip according to claim 6, wherein: The step of providing a first electrode layer on a side of the semiconductor layer facing away from the substrate comprises: Disposing a reflective layer on a side of the semiconductor layer facing away from the substrate; The first electrode layer is arranged on a side of the reflective layer facing away from the semiconductor layer.

8. The method for manufacturing an LED chip according to claim 7, wherein: The material of the reflective layer includes at least one of ITO, Ag, Au, Al, Cr, Ni and Ti.

9. An LED packaging device, characterized in that: The LED chip comprises the LED chip as described in any one of claims 1 to 5.

10. A display device, characterized in that: The LED chip comprises the LED chip as described in any one of claims 1 to 5.

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