Metal-insulator-metal device and method of forming the same

Abstract

In some embodiments, the present invention relates to a metal-insulator-metal (MIM) device. The metal-insulator-metal device includes a substrate, and a first electrode and a second electrode stacked above the substrate. A dielectric layer is arranged between the first electrode and the second electrode. In addition, the metal-insulator-metal device includes a titanium gettering layer disposed above the substrate and separated from the dielectric layer by the first electrode. The titanium gettering layer has a higher hydrogen absorption capacity than the dielectric layer.

Description

Technical Field

[0001] The embodiments of the present invention relate to a metal-insulator-metal device and a method for forming the same. Background Art

[0002] Semiconductor device manufacturing is a process for producing integrated circuits found in everyday electronic devices. The manufacturing process is a multi-step sequence of photolithography and chemical processing steps during which electronic circuits are gradually built on a wafer. During manufacturing, byproducts (e.g., ions, gases, etc.) may remain in the critical layer of the semiconductor device, causing damage and thus shortening the life of the semiconductor device. In order to prevent damage caused by these byproducts, some semiconductor devices include a getter layer configured to absorb the byproducts. Therefore, the byproducts can accumulate in the getter layer instead of in the critical layer, thereby preventing damage to the semiconductor device by the byproducts. Summary of the invention

[0003] A metal-insulator-metal (MIM) device according to an embodiment of the present invention includes: a substrate; a first electrode and a second electrode stacked above the substrate; a dielectric layer arranged between the first electrode and the second electrode; and a titanium gettering layer disposed above the substrate and separated from the dielectric layer by the first electrode, wherein the titanium gettering layer has a higher hydrogen absorption capacity than the dielectric layer.

[0004] A metal-insulator-metal (MIM) device according to an embodiment of the present invention includes: a MIM stack disposed on a substrate, wherein the MIM stack includes a dielectric layer between a first electrode layer and a second electrode layer; a titanium gettering layer in contact with the first electrode layer and separated from the dielectric layer by the first electrode layer, wherein the titanium gettering layer has a higher hydrogen absorption capacity than the dielectric layer, and wherein the thickness of the titanium gettering layer is at least 20% of the thickness of the first electrode layer.

[0005] A method for forming a metal-insulator-metal (MIM) device according to an embodiment of the present invention includes: depositing a bottom electrode layer above a substrate; depositing a dielectric layer above the bottom electrode layer; depositing a top electrode layer above the dielectric layer; depositing a first titanium gettering layer above the top electrode layer; patterning the first titanium gettering layer, the top electrode layer, and the dielectric layer to expose a peripheral portion of the bottom electrode layer; and depositing a passivation layer over the substrate, the first titanium gettering layer, and a peripheral portion of the bottom electrode layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] The various aspects of the present invention will be best understood by reading the following detailed description in conjunction with the accompanying drawings. It should be noted that, according to standard practice in the industry, the various features are not drawn to scale. In fact, the size of the various features may be arbitrarily increased or reduced for clarity of discussion.

[0007] Figure 1A , Figure 1B , Figure 1C as well as Figure 1D Cross-sectional views of some embodiments of a metal-insulator-metal (MIM) device including a titanium gettering layer disposed above a top electrode are shown.

[0008] Figure 2A , Figure 2B as well as Figure 2C Cross-sectional views of some embodiments of a MIM device including a titanium gettering layer disposed below a bottom electrode are shown.

[0009] Figure 3A and Figure 3B Cross-sectional views of some embodiments of a MIM device including a first titanium gettering layer disposed above a top electrode and a second titanium gettering layer disposed below a bottom electrode are shown.

[0010] Figures 4 to 9 Cross-sectional views of some embodiments of forming a MIM device including a titanium gettering layer disposed above a top electrode are shown.

[0011] Fig.10 Shown as Figures 4 to 9 Flowcharts of some embodiments of the method are shown.

[0012] Figures 11 to 16 Cross-sectional views of some embodiments of forming a MIM device including a titanium gettering layer disposed below a bottom electrode are shown.

[0013] Fig.17 Shown as Figures 11 to 16 Flowcharts of some embodiments of the method are shown. DETAILED DESCRIPTION

[0014] The following disclosure provides many different embodiments or examples for implementing the different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present invention. Of course, these are only examples and are not intended to be limiting. For example, in the following description, the formation of a first feature above or on a second feature may include an embodiment in which the first feature is formed in direct contact with the second feature, and may also include an embodiment in which an additional feature may be formed between the first feature and the second feature so that the first feature and the second feature may not be in direct contact. In addition, the present invention may repeat the figure numbers and / or letters in various examples. This repetition is for the purpose of simplicity and clarity, and does not itself indicate the relationship between the various embodiments and / or configurations discussed.

[0015] Additionally, for ease of description, spatially relative terms such as "below," "beneath," "lower," "above," "upper," etc. may be used to describe the relationship of one element or feature to another element or feature as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations), and the spatially relative descriptors used herein should be interpreted accordingly.

[0016] A metal-insulator-metal (MIM) device includes a dielectric layer arranged between a top electrode and a bottom electrode. When a sufficient voltage bias is applied across the top electrode and the bottom electrode, the properties of the dielectric layer change due to the mechanism of the dielectric layer. The mechanism depends on the material of the dielectric layer. In some embodiments, the dielectric layer may include, for example, ceramics, metal oxides, nitrides, carbides, silicon oxides, or piezoelectrics. In some embodiments, the sufficient voltage bias causes a change in the mechanical properties of the dielectric layer. For example, in some embodiments, the dielectric layer may include a piezoelectric material, and a sufficient voltage bias applied to the top electrode and the bottom electrode may induce mechanical stress in the piezoelectric layer. The mechanical stress may be used, for example, for acoustic, mechanical, and / or optical applications. In other embodiments, the dielectric layer may include a ceramic material, and a sufficient voltage bias across the ceramic material may cause atoms to shift into a crystal structure formation, which changes the resistance of the ceramic material. The resistance state of the dielectric layer may be used, for example, to store data in a memory cell.

[0017] A MIM device can be formed by depositing a bottom electrode over a substrate, a dielectric layer over the bottom electrode, and a top electrode over the bottom electrode. Next, the top electrode and the dielectric layer are patterned using photolithography and etching so that a portion of the bottom electrode is exposed. Metal contacts are then formed on the top electrode and on the exposed portion of the bottom electrode so that a voltage bias can be applied across the top electrode and the bottom electrode.

[0018] However, it should be understood that due to the residual effect of the formation of the MIM device, the hydrogen ions that are difficult to remove may remain in the bottom electrode, the dielectric layer and / or the top electrode. For example, in some embodiments, a photoresist can be used for patterning the top electrode and the dielectric layer, and the stripping of the photoresist may cause the hydrogen ions to remain. In other embodiments, the wet etching and / or dry etching used to form the MIM device may also cause the hydrogen ions to remain. During the application of the MIM device, if a negative voltage is applied to the top electrode, hydrogen ions may accumulate at the first interface between the top electrode and the dielectric layer. On the contrary, if a positive voltage is applied to the top electrode, hydrogen ions may accumulate at the second interface between the bottom electrode and the dielectric layer. Hydrogen ions may generate hydrogen at the interface, thereby causing interface delamination, arc generation and final dielectric breakdown.

[0019] Various embodiments of the present invention provide a MIM device including a titanium gettering layer, the titanium gettering layer being configured to act as a hydrogen gettering layer. In some embodiments, the titanium gettering layer is disposed below a bottom electrode. In other embodiments, the titanium gettering layer is disposed above a top electrode. The titanium gettering layer has a higher affinity than a dielectric layer, so that the titanium gettering layer is more likely to absorb hydrogen than the dielectric layer (e.g., to form a compound with hydrogen to adsorb hydrogen). Therefore, hydrogen ions can accumulate in the titanium gettering layer away from the dielectric layer, and dielectric breakdown can be mitigated to increase the life of the MIM device. Therefore, embodiments of the present invention provide a method for manufacturing a MIM device having a titanium gettering layer to manufacture a reliable MIM device.

[0020] Figure 1A A cross-sectional view 100A of some embodiments of a metal-insulator-metal (MIM) device including a titanium gettering layer above a top electrode is shown.

[0021] The MIM device in cross-sectional view 100A includes a bottom electrode 104 disposed over a substrate 102. A dielectric layer 106 is disposed over the bottom electrode 104, and a top electrode 108 is disposed over the dielectric layer 106. In some embodiments, the dielectric layer 106 may include a ceramic, a metal oxide, an aluminum nitride, a piezoelectric material (e.g., lead zirconate titanate, barium titanate, lithium niobate, or the like), a silicon oxide, a carbide, or a nitride. In some embodiments, a titanium gettering layer 110 is disposed over the top electrode 108. The titanium gettering layer 110 may directly contact the top electrode 108. In some embodiments, the titanium gettering layer 110 is separated from the dielectric layer 106 by the top electrode 108.

[0022] The dielectric layer 106 has a first affinity for hydrogen, and the titanium gettering layer 110 has a second affinity for hydrogen that is greater than the first affinity. The greater second affinity for hydrogen makes it easier for the titanium gettering layer 110 to collect hydrogen (e.g., absorb hydrogen, adsorb hydrogen, form a compound with hydrogen) than the dielectric layer 106. Therefore, more hydrogen can be accumulated in the titanium gettering layer 110 than in the dielectric layer 106. For example, in some embodiments, the affinity for hydrogen can be quantified by measuring the hydrogen gettering capacity. It should be understood that throughout the present invention, when comparing gettering capacities or affinities, they are compared under the same environmental conditions (e.g., pressure, temperature, etc.). Therefore, the titanium gettering layer 110 can have a higher hydrogen gettering capacity than the dielectric layer 106. In other words, the titanium gettering layer 110 can be defined as a hydrogen gettering layer, wherein the gettering layer includes titanium. Additionally, in some embodiments, the top electrode 108 has a third affinity for hydrogen and the bottom electrode 104 has a fourth affinity for hydrogen, wherein the second affinity is greater than the third affinity and the fourth affinity. In such embodiments, the greater second affinity for hydrogen causes the titanium gettering layer 110 to absorb hydrogen more readily than the top electrode 108, the dielectric layer 106, and / or the bottom electrode 104.

[0023] In some embodiments, the titanium getter layer 110 comprises a material different from the top electrode 108 and the bottom electrode 104. In some embodiments, the titanium getter layer 110 comprises pure titanium to maximize the second affinity for hydrogen. In such embodiments, the titanium getter layer 110 may have a hydrogen gettering capacity of up to about 27 Pascal liters per milligram. In other embodiments, the titanium getter layer 110 comprises titanium and oxygen. In such other embodiments, the atomic ratio of oxygen to titanium in the titanium getter layer 110 is less than 50%. The atomic ratio of oxygen to titanium in the titanium getter layer 110 is less than 50% so that the second affinity for hydrogen is stronger than the first affinity.

[0024] In some embodiments, the titanium gettering layer 110 has a first thickness t1, and the top electrode 108 has a second thickness t2. In some embodiments, a first ratio of the first thickness t1 to the second thickness t2 is greater than 20% (i.e., t1 / t2>0.2). In other embodiments where the first ratio is less than 20%, the second affinity for hydrogen may not be effective. Therefore, in order to increase the accumulation of hydrogen in the titanium gettering layer 110, the first ratio is greater than 20%. In addition, in yet other embodiments, the bottom electrode 104 and / or the top electrode 108 may also include titanium. In such other embodiments, the third affinity and / or the fourth affinity may be substantially equal to the second affinity. Therefore, in such other embodiments, the bottom electrode 104 and / or the top electrode 108 may act as an additional hydrogen gettering layer to prevent hydrogen accumulation in the dielectric layer 106.

[0025] In some embodiments, the passivation layer 112 is disposed over and in contact with the top surface of the titanium gettering layer 110 and the substrate 102, in addition to the sidewalls of the titanium gettering layer 110, the top electrode 108, the dielectric layer 106, and the bottom electrode 104. In some embodiments, the titanium gettering layer 110 has a first width, the bottom electrode 104 has a second width, the dielectric layer 106 has a third width, and the top electrode 108 has a fourth width. In some embodiments, the second width of the bottom electrode 104 is greater than the first width, the third width, and the fourth width, such that a peripheral portion 104p of the bottom electrode 104 is not directly below the dielectric layer 106, the top electrode 108, or the titanium gettering layer 110. In such embodiments, the passivation layer 112 may be disposed on and in contact with the top surface of the bottom electrode 104. In some embodiments, the titanium gettering layer 110, the top electrode 108, and the dielectric layer 106 may be substantially aligned with each other.

[0026] In some embodiments, the first metal contact 114a may extend through the passivation layer 112 to contact the titanium gettering layer 110, such that the first metal contact 114a is electrically coupled to the top electrode 108. The second metal contact 114b may extend through the passivation layer 112 to contact the peripheral portion 104p of the bottom electrode 104. In some embodiments, the solder bump 116 may couple the wire 118 to the first metal contact 114a and the second metal contact 114b. In some embodiments, the wire 118 is coupled to a voltage source to apply a voltage bias across the bottom electrode 104 and the top electrode 108. In some embodiments, residual hydrogen ions in the MIM device accumulate in the titanium gettering layer 110 and away from the dielectric layer 106 so that the hydrogen ions do not damage the dielectric layer 106.

[0027] Figure 1B A cross-sectional view 100B is shown of some additional embodiments of a MIM device including a titanium gettering layer above a top electrode.

[0028] Figure 1B The cross-sectional view 100B of the MIM device includes Figure 1A 100A, except for the voltage terminal 120. In some embodiments, the wire 118 is coupled to the voltage terminal 120 so that the top electrode 108 is coupled to the negative voltage terminal and the bottom electrode 104 is coupled to the positive voltage terminal. In such embodiments, hydrogen ions having a positive charge may move in the negative direction of the voltage terminal 120. Therefore, the titanium gettering layer 110 is coupled to the negative side of the voltage terminal 120, so that the hydrogen ions are even more likely to accumulate in the titanium gettering layer 110 and away from the dielectric layer 106.

[0029] For example, Figure 1C Shown is drawn in the applied Figure 1B 100C is a graph of exemplary hydrogen content as a function of the position of the MIM device between two terminals (e.g., the bottom electrode 104 coupled to the positive voltage terminal and the top electrode 108 coupled to the negative terminal) after the bias conditions described in FIG. The depth can be divided into a top portion 170 including the top electrode 108 and the titanium gettering layer 110, a bottom portion 174 including the bottom electrode 104, and a middle portion 172 including the dielectric layer 106. The hydrogen intensity can be measured by an elemental analysis process (e.g., spectroscopy). The highest point 180 of the hydrogen intensity in the top portion 170 indicates that hydrogen has accumulated in the titanium gettering layer 110, which is away from the interface between the middle portion 172 and the top portion 170. Therefore, after the applied Figure 1B Following the bias conditions described in , an elemental analysis process may indicate the presence of a titanium gettering layer 110 above the top electrode 108 .

[0030] Figure 1DA cross-sectional view 100D is shown of some additional embodiments of a MIM device including a titanium gettering layer above a top electrode.

[0031] Figure 1D The MIM device in the cross-sectional view 100D includes Figure 1A 100A of the MIM device of the cross-sectional view 100D. In addition, the MIM device in the cross-sectional view 100D includes a first contact hole 150a, which extends through the passivation layer 112 to contact the titanium gettering layer 110. The second contact hole 150b extends through the passivation layer 112 to contact the bottom electrode 104. The first contact hole 150a and the second contact hole 150b are coupled to the metal line 154 and embedded in the inter-layer dielectric (ILD) structure 152. In other embodiments (not shown), the ILD structure 152 is also below the bottom electrode 104. In such other embodiments, the etch stop layer can be directly disposed below and in direct contact with the bottom electrode 104 instead of the substrate 102. In addition, in some embodiments, the ILD structure 152 and the passivation layer 112 include the same material.

[0032] Figure 2A A cross-sectional view 200A of some embodiments of a MIM device including a titanium gettering layer below a bottom electrode is shown.

[0033] Figure 2A The MIM device includes a titanium gettering layer 110 disposed over a substrate 102. A bottom electrode 104 is disposed over the titanium gettering layer 110. A top electrode 108 over a dielectric layer 106 is disposed over the bottom electrode 104. In some embodiments, a passivation layer 112 is disposed over and in contact with the top electrode 108 and a top surface of the substrate 102, in addition to being disposed on and in contact with the top electrode 108, the dielectric layer 106, the bottom electrode 104, and the surfaces of the sidewalls of the titanium gettering layer 110. Thus, in some embodiments, a peripheral portion 104p of the bottom electrode extends laterally through the dielectric layer 106 such that the peripheral portion 104p is not directly beneath the dielectric layer 106 or the top electrode 108. In some embodiments, the titanium gettering layer 110 is substantially aligned with a lower face of the bottom electrode 104 such that the titanium gettering layer 110 is directly beneath the peripheral portion 104p of the bottom electrode 104. In some embodiments, the top electrode 108 is substantially aligned with the top of the dielectric layer 106. In some embodiments, the outer sidewalls of the dielectric layer 106 and the outer sidewalls of the bottom electrode 104 are not aligned.

[0034] In some embodiments, the first metal contact 114a extends through the passivation layer 112 and is electrically coupled to the top electrode 108. Similarly, in some embodiments, the second metal contact 114b extends through the passivation layer 112, contacts the peripheral portion 104p of the bottom electrode 104, and is thus electrically coupled to the bottom electrode 104. In some embodiments, the bottom electrode 104 and the top electrode 108 are coupled to other devices within the circuit via solder bumps 116 and wires 118.

[0035] The dielectric layer 106 has a first affinity for hydrogen, and the titanium gettering layer 110 has a second affinity for hydrogen that is greater than the first affinity. The greater second affinity for hydrogen makes the titanium gettering layer 110 more easily absorb hydrogen than the dielectric layer 106. Therefore, hydrogen can accumulate in the titanium gettering layer 110 separated from the dielectric layer 106, and damage to the dielectric layer 106 caused by hydrogen accumulation can be reduced. In some embodiments, the top electrode 108 has a third affinity for hydrogen, and the bottom electrode 104 has a fourth affinity for hydrogen, wherein the second affinity is greater than the third affinity and the fourth affinity. Therefore, the second affinity for hydrogen is the strongest, so that hydrogen ions accumulate in the titanium gettering layer 110 separated from the dielectric layer 106. In some embodiments, the titanium gettering layer 110 has a fourth thickness t4, and the bottom electrode layer 104 has a third thickness t3. In some embodiments, the second ratio of the fourth thickness t4 to the third thickness t3 is greater than 20% to increase the effectiveness of the titanium gettering layer 110 as a hydrogen gettering layer.

[0036] In some embodiments, Figure 2A The titanium gettering layer 110 of the embodiment of the present invention is composed of titanium. In other embodiments, the titanium gettering layer 110 includes titanium and oxygen. In some embodiments, the atomic ratio of oxygen to titanium in the titanium gettering layer 110 is less than 50%. In other embodiments, the molar ratio, mass ratio and / or volume ratio of oxygen to titanium in the titanium gettering layer 110 is less than 50%. In addition, in still other embodiments, the bottom electrode 104 and / or the top electrode 108 may also include titanium. In some such embodiments, the third affinity and / or the fourth affinity may be substantially equal to the second affinity. Therefore, in such other embodiments, the bottom electrode 104 and / or the top electrode 108 may act as an additional hydrogen gettering layer to prevent hydrogen accumulation in the dielectric layer 106.

[0037] Figure 2B A cross-sectional view 200B is shown of some additional embodiments of a MIM device including a titanium gettering layer below a bottom electrode.

[0038] Figure 2B The cross-sectional view 200B of the MIM device includes Figure 2A200A, except for the voltage terminal 120. In some embodiments, the wire 118 is coupled to the voltage terminal 120 such that the top electrode 108 is coupled to the positive voltage terminal and the bottom electrode 104 is coupled to the negative voltage terminal. In such embodiments, hydrogen ions having a positive charge can move in the negative direction of the voltage terminal 120. Therefore, the titanium gettering layer 110 is below the bottom electrode 104 because the bottom electrode 104 is coupled to the negative side of the voltage terminal 120. Therefore, the hydrogen ions are even more likely to accumulate in the titanium gettering layer 110 away from the dielectric layer 106.

[0039] Figure 2C A cross-sectional view 200C is shown of some additional embodiments of a MIM device including a titanium gettering layer below a bottom electrode.

[0040] Figure 2C The cross-sectional view 200C of the MIM device includes the same Figure 2A 100A, 100B, 100C, 100C, 100A, 100B ...C, 100B, 100C, 100A, 100B, 100C, 100B, 100C, 100C, 100B, 100C, 100B, 100C, 100C, 100B, 100C, 100C, 100B, 100C, 100C, 100B, 100C, 100C, 100B, 100C, 100C, 100C, 100B, 100C, 100C, 100C, 100B, 100C, 100C, 100C, 100C, 100C, 100B, 100C, 100C, 100C, 100C, 100C, 100C, 100C, 100C, 100C, 100C, 100C, 100C, 100C,

[0041] Figure 3A A cross-sectional view 300A of some embodiments of a MIM device including a first titanium gettering layer above a top electrode and a second titanium gettering layer below a bottom electrode is shown.

[0042] In some embodiments, the first titanium gettering layer 310 is disposed above the top electrode 108, and the second titanium gettering layer 312 is arranged below the bottom electrode 104. In such embodiments, the first titanium gettering layer 310 may be spaced apart from the dielectric layer 106 by the top electrode 108, and the second titanium gettering layer 312 may be spaced apart from the dielectric layer 106 by the bottom electrode 104. The dielectric layer 106 has a first affinity for hydrogen, the first titanium gettering layer 310 and the second titanium gettering layer 312 have a second affinity for hydrogen, the top electrode 108 has a third affinity for hydrogen, and the bottom electrode 104 has a fourth affinity for hydrogen. In some embodiments, the second affinity is greater than the first affinity, the third affinity, and the fourth affinity, such that hydrogen ions accumulate in the first titanium gettering layer 310 and the second titanium gettering layer 312 instead of the dielectric layer 106.

[0043] In some embodiments, the first titanium gettering layer 310 and the second titanium gettering layer 312 are each composed of titanium to maximize the second affinity for hydrogen. In other embodiments, the first titanium gettering layer 310 and / or the second titanium gettering layer 312 may include titanium and oxygen. In such other embodiments, the atomic ratio of oxygen to titanium in the first titanium gettering layer 310 is less than 50%, so that the second affinity for hydrogen is still stronger than the first affinity. In addition, in such other embodiments, the atomic ratio of oxygen to titanium in the second titanium gettering layer 312 is less than 50%, so that the first affinity for hydrogen is still stronger than the third affinity.

[0044] Thus, in some embodiments, the first titanium gettering layer 310 and the second titanium gettering layer 312 include materials different from the top electrode 108 and the bottom electrode 104, such that the hydrogen ions accumulate away from the dielectric layer 106 and are spaced apart from the dielectric layer 106. However, in other embodiments, the bottom electrode 104 and / or the top electrode 108 also include titanium to assist in the accumulation of hydrogen ions. In such other embodiments, the second affinity for hydrogen may be substantially equal to the affinity of the bottom electrode 104 and / or the top electrode 108. Nevertheless, in such other embodiments, the hydrogen ions still accumulate away from the dielectric layer 106 to the top electrode 108, the bottom electrode, and / or the titanium gettering layer 110.

[0045] In some embodiments, the first titanium gettering layer 310 has a first thickness t1, the top electrode 108 has a second thickness t2, the bottom electrode 104 has a third thickness t3, and the second titanium gettering layer 312 has a fourth thickness t4. In some embodiments, a first ratio of the first thickness t1 to the second thickness t2 is greater than 20%. In some embodiments, a second ratio of the fourth thickness t4 to the third thickness t3 is also greater than 20%.

[0046] In some embodiments, the MIM device includes a first titanium gettering layer 310 above the top electrode 108 and a second titanium gettering layer 312 below the bottom electrode 104 because the voltage bias applied across the top electrode 108 and the bottom electrode 104 may be different in polarity. For example, in some embodiments, at a first time, the top electrode 108 may be coupled to a more positive voltage than the bottom electrode 104, and hydrogen ions having a positive charge may leave the top electrode 108 and move toward the bottom electrode 104. In such embodiments, at the first time, the second titanium gettering layer 312 accumulates hydrogen ions so that the hydrogen ions do not damage the interface of the bottom electrode 104 and the dielectric layer 106. Then, at a second time, the bottom electrode 104 may be coupled to a more positive voltage than the top electrode 108, and hydrogen ions having a positive charge may move away from the bottom electrode 104 and toward the top electrode 108. In such embodiments, at the second time, the first titanium gettering layer 310 accumulates hydrogen ions so that the hydrogen ions do not damage the interface of the top electrode 108 and the dielectric layer 106. Therefore, in some embodiments, the MIM device includes a first titanium gettering layer 310 above the top electrode 108 and a second titanium gettering layer 312 below the bottom electrode 104 to prevent hydrogen ions from accumulating in the dielectric layer 106 regardless of the polarity of the applied voltage bias.

[0047] Figure 3B A cross-sectional view 300B of some embodiments of a MIM device including a first titanium gettering layer above a top electrode and a second titanium gettering layer below a bottom electrode is shown.

[0048] Figure 3B The cross-sectional view 300B of the MIM device includes Figure 1D The cross-sectional view 100D of FIG. 1 shows the same features of the MIM device, except for the second titanium gettering layer 312 below the bottom electrode 104 .

[0049] Figures 4 to 9 The formation of a titanium gettering layer with a top electrode is shown. Figure 1A Some embodiments of the method of the MIM device are shown in cross-sectional view 400 to cross-sectional view 900. Although the method is described with respect to Figures 4 to 9 , but it should be understood that Figures 4 to 9 The structure disclosed in is not limited to this method, but can stand alone as a structure independent of the method.

[0050] like Figure 4As shown in the cross-sectional view 400 of , a substrate 102 is provided. In some embodiments, the substrate 102 may include, for example, silicon, glass, an oxide (e.g., silicon dioxide, aluminum oxide), or the like. A MIM stack 402 may then be formed over the substrate 102. The formation of the MIM stack 402 includes a bottom electrode 104 deposited over the substrate 102, a dielectric layer 106 deposited over the bottom electrode 104, and a top electrode 108 deposited over the dielectric layer 106. In some embodiments, the bottom electrode 104, the dielectric layer 106, and / or the top electrode 108 may each be deposited by a deposition process (e.g., chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), etc.). The bottom electrode 104 and the top electrode 108 may each include, for example, stainless steel, brass, copper, galvanized iron, mild steel, lead, monel, nickel, nichrome, zinc, phosphor bronze, aluminum, platinum, gold, ruthenium, copper alloys, graphite, calcium, cesium carbonate, lithium fluoride, molybdenum (IV) oxide, silver, carbon, palladium, tin, steel, scandium, titanium, vanadium, chromium, manganese, cobalt, gallium, indium, thallium, doped silicon, polysilicon, germanium, antimony, tungsten, hafnium, iridium, mixed metal oxides, titanium nitride, tantalum nitride, or the like. In some embodiments, the bottom electrode 104 includes the same material as the top electrode 108, while in other embodiments, the bottom electrode 104 may include a different material than the top electrode 108. In some embodiments, the dielectric layer 106 may include a ceramic, a metal oxide, aluminum nitride, a piezoelectric, a silicon oxide, a carbide, or a nitride.

[0051] Furthermore, in some embodiments, a titanium gettering layer 110 is deposited over the top electrode 108. In some embodiments, the titanium gettering layer 110 is deposited by a deposition process such as chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), sputtering, etc. The titanium gettering layer 110 has a second affinity for hydrogen that is greater than the affinity of the dielectric layer 106, the bottom electrode 104, and the top electrode 108. Furthermore, in some embodiments, the gettering layer 110 is composed of titanium. In other embodiments, the titanium gettering layer 110 includes titanium and oxygen, wherein the atomic ratio of oxygen to titanium in the titanium gettering layer 110 is less than 50%, such that the second affinity is not impaired. In some embodiments, the bottom electrode 104 and / or the top electrode 108 also include titanium to assist the accumulation of hydrogen ions. In such embodiments, the second affinity for hydrogen may be substantially equal to the affinity of the bottom electrode 104 and / or the top electrode 108. Nevertheless, in such embodiments, the hydrogen ions are still concentrated away from the dielectric layer 106 to the top electrode 108 , the bottom electrode, and / or the titanium gettering layer 110 .

[0052] Furthermore, in some embodiments, a first ratio of the first thickness t1 of the titanium gettering layer 110 to the second thickness t2 of the top electrode 108 is greater than 20%, such that the second affinity is not impaired. The bottom electrode 104 has a third thickness t3, and the dielectric layer 106 has a fifth thickness t5. In some embodiments, the second thickness t2, the third thickness t3, the fourth thickness t4, and the fifth thickness t5 may each be within a range between about 10 angstroms and about 100 angstroms. In other embodiments, the second thickness t2, the third thickness t3, the fourth thickness t4, and the fifth thickness t5 may each be within a range between about 10 angstroms and about 100 angstroms. T2 , the third thickness t3, the fourth thickness t4, and the fifth thickness t5 may each be in a range between about 100 angstroms and about 0.1 microns. In other embodiments, the second thickness t2, the third thickness t3, the fourth thickness t4, and the fifth thickness t5 may each be in a range between about 0.1 microns and about 1 micron. In other embodiments, the second thickness t2, the third thickness t3, the fourth thickness t4, and the fifth thickness t5 may each be in a range between about 1 micron and about 100 microns. In other embodiments, the second thickness t2, the third thickness t3, the fourth thickness t4, and the fifth thickness t5 may each be in a range between about 100 microns and about 1 millimeter. Nevertheless, the first ratio is greater than 50% to prevent damage at the dielectric layer 106.

[0053] like Figure 5 As shown in the cross-sectional view 500 of FIG. 1 , a patterning step is performed to remove portions of the titanium gettering layer 110, the top electrode 108, and the dielectric layer 106. The patterning step exposes the peripheral portion 104p of the bottom electrode 104. In some embodiments, the patterning step may be performed based on a mask layer (not shown) formed above the titanium gettering layer 110. In some embodiments, the mask layer may include a photosensitive material (e.g., photoresist) formed by a spin coating process. In such embodiments, the layer of photosensitive material is selectively exposed to electromagnetic radiation based on a photomask. The electromagnetic radiation modifies the solubility of the exposed areas within the photosensitive material to define soluble areas. Subsequently, the photosensitive material is developed by removing the soluble areas to define the mask layer. An etching process (e.g., wet etching, dry etching) may then remove portions of the titanium gettering layer 110, the top electrode 108, and the dielectric layer 106 based on the mask layer. In some embodiments, the etching process removes the titanium gettering layer 110, the top electrode 108, and the dielectric layer 106 in a single step using a single etchant. In other embodiments, the etching process may include multiple steps with different etchants.After the etching process, the mask layer may be stripped.

[0054] In some embodiments, the aforementioned patterning steps including photoresist and etching may leave residual hydrogen ions within the MIM stack 402. However, the hydrogen ions may accumulate in the titanium getter layer 110, which has a higher affinity for hydrogen than the layers in the MIM stack 402. Therefore, the titanium getter layer 110 prevents hydrogen from accumulating in the MIM stack 402, and thus, protects the MIM stack 402 from interface delamination, arcing, and ultimately device breakdown.

[0055] like Figure 6 As shown in the cross-sectional view 600 of FIG. 4 , in some embodiments, a passivation layer 112 may be deposited over the substrate 102 and the titanium gettering layer 110. In some embodiments, the passivation layer 112 may be deposited by a deposition process such as chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), sputtering, etc. The passivation layer 112 may include, for example, silicon oxide, silicon nitride, a metal oxide such as aluminum oxide, or the like to protect the MIM stack 402 and the titanium gettering layer 110 from environmental conditions. In some embodiments, the passivation layer 112 may have a thickness in a range between about 10 angstroms and about 100 angstroms. In other embodiments, the passivation layer 112 may have a thickness in a range between about 100 angstroms and about 0.1 microns. In other embodiments, the passivation layer 112 may have a thickness in a range between about 0.1 microns and about 1 micron. In other embodiments, the passivation layer 112 may have a thickness in a range between about 1 micron and about 100 microns. In other embodiments, the passivation layer 112 may have a thickness within a range between about 100 microns and about 1 millimeter.

[0056] like Figure 7 As shown in the cross-sectional view 700 of FIG. 1 , the passivation layer 112 may be patterned to define a first opening 702 and a second opening 704 in the passivation layer 112. The first opening 702 exposes the titanium gettering layer 110, and the second opening 704 exposes the peripheral portion 104p of the bottom electrode 104. In some embodiments, the patterning of the passivation layer 112 may be performed using photolithography and etching. In some embodiments, the first opening 702 and the second opening 704 each have a width in a range between about 10 microns and about 50 microns. In other embodiments, the first opening 702 and the second opening 704 each have a width in a range between about 50 microns and about 100 microns. In other embodiments, the first opening 702 and the second opening 704 each have a width in a range between about 100 microns and about 500 microns. In other embodiments, the first opening 702 and the second opening 704 each have a width in a range between about 500 microns and about 10 millimeters. In other embodiments, the first opening 702 and the second opening 704 each have a width within a range between about 10 millimeters and about 100 millimeters.

[0057] like Figure 8 As shown in the cross-sectional view 800 of FIG. 1 , in some embodiments, a metal layer 804 is deposited over the passivation layer 112. The metal layer 804 may be formed through a first opening ( Figure 7 The first opening 702 of the titanium absorber layer 110 is in contact with the titanium absorber layer 110, and the second opening ( Figure 7 The second opening 704 of the bottom electrode 104 is provided to contact the bottom electrode 104. In some embodiments, the metal layer 804 can be deposited to a certain thickness by a deposition process (e.g., chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), sputtering, etc.). For example, the metal layer 804 includes a conductive material such as copper, aluminum, or tungsten. In some embodiments, the thickness of the metal layer 804 can be in a range between about 10 angstroms and about 100 angstroms. In other embodiments, the thickness of the metal layer 804 can be in a range between about 100 angstroms and about 0.1 microns. In other embodiments, the thickness of the metal layer 804 can be in a range between about 0.1 microns and about 1 micron. In other embodiments, the thickness of the metal layer 804 can be in a range between about 1 micron and about 100 microns. In other embodiments, the thickness of the metal layer 804 can be in a range between about 100 microns and about 1 millimeter.

[0058] like Fig. 9 As shown in the cross-sectional view 900 of the patterned metal layer ( Figure 8 metal layer 804) to remove the first opening ( Figure 7 The first opening 702) and the second opening ( Figure 7 The metal layer ( Figure 8 The metal layer 804) is a part of the metal layer. Figure 8 The remaining portion of the metal layer 804 of FIG. 8 defines a first metal contact 114 a electrically coupled to the top electrode 108 and a second metal contact 114 b electrically coupled to the bottom electrode 104. In some embodiments, the first metal contact 114 a and the second metal contact 114 b may then be coupled to the wire 118 via the solder bump 116.

[0059] Fig.10 Shown as Figures 4 to 9 Flowchart of some embodiments of a method 1000 for a MIM device having a titanium gettering layer over a top electrode is shown in FIG.

[0060] Although the disclosed methods (e.g., method 1000 and method 1700) are illustrated and described as a series of actions or events, it should be understood that the illustrated ordering of such actions or events should not be interpreted in a limiting sense. For example, in addition to the actions or events shown and / or described herein, some actions may occur in a different order and / or simultaneously with other actions or events. In addition, not all of the actions shown may be required to implement one or more aspects or embodiments of the description herein. In addition, one or more of the actions depicted herein may be performed in one or more separate actions and / or stages.

[0061] At act 1002, a bottom electrode layer is deposited over a substrate.

[0062] At act 1004, a dielectric layer is deposited over the bottom electrode layer.

[0063] At act 1006 , a top electrode layer is deposited over the dielectric layer.

[0064] At act 1008, a titanium gettering layer is deposited over the top electrode layer. Figure 4 Cross-sectional view 400 is shown corresponding to some embodiments of act 1002 , act 1004 , act 1006 , and act 1008 .

[0065] At act 1010, the titanium gettering layer, the top electrode layer, and the dielectric layer are patterned to expose a peripheral portion of the bottom electrode layer. Figure 5 Cross-sectional view 500 is shown corresponding to some embodiments of act 1010 .

[0066] At act 1012, a passivation layer is deposited over the substrate, the titanium gettering layer, and a peripheral portion of the bottom electrode layer. Figure 6 A cross-sectional view 600 corresponding to some embodiments of act 1012 is shown.

[0067] At act 1014, a first metal contact and a second metal contact are formed. The first metal contact is coupled to the top electrode layer, and the second metal contact is coupled to the bottom electrode layer. Figure 7 and Figure 8 Cross-sectional view 700 and cross-sectional view 800 are shown corresponding to some embodiments of act 1014 .

[0068] Figures 11 to 16 The formation of a titanium gettering layer below the bottom electrode is shown. Figure 2A Some embodiments of the method of the MIM device are shown in cross-sectional views 1100 to 1500. Although the method is described with respect to Figures 11 to 16 , but it should be understood that Figures 11 to 16 The structure disclosed in is not limited to this method, but can stand alone as a structure independent of the method.

[0069] like Fig.11 As shown in a cross-sectional view 1100 of , a substrate 102 is provided. A titanium gettering layer 110 is deposited over the substrate 102, and a MIM stack 402 is deposited over the titanium gettering layer 110. The MIM stack 402 includes a dielectric layer 106 deposited over a bottom electrode 104 and a top electrode 108 deposited over the dielectric layer 106. In some embodiments, the MIM stack 402 and the titanium gettering layer 110 may each be deposited by a deposition process such as chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), sputtering, etc.

[0070] In some embodiments, the titanium gettering layer 110 has a second affinity for hydrogen that is greater than the affinity of the dielectric layer 106 and the bottom electrode 104. In addition, in some embodiments, the gettering layer 110 is composed of titanium. In other embodiments, the titanium gettering layer 110 includes titanium and oxygen, wherein the atomic ratio of oxygen to titanium in the titanium gettering layer 110 is less than 50%, such that the second affinity is not impaired. In addition, in some embodiments, the first ratio of the fourth thickness t4 of the titanium gettering layer 110 to the third thickness t3 of the bottom electrode 104 is greater than 20%, such that the second affinity is not impaired. In some embodiments, the bottom electrode 104 and / or the top electrode 108 also include titanium to assist in the accumulation of hydrogen ions. In such embodiments, the second affinity for hydrogen may be substantially equal to the affinity of the bottom electrode 104 and / or the top electrode 108. Nevertheless, in such embodiments, hydrogen ions are still gathered away from the dielectric layer 106 to the top electrode 108, the bottom electrode and / or the titanium gettering layer 110.

[0071] The top electrode 104 has a second thickness t2, and the dielectric layer 106 has a fifth thickness t5. In some embodiments, the second thickness t2, the third thickness t3, the fourth thickness t4, and the fifth thickness t5 may each be in the range between about 10 angstroms and about 100 angstroms. In other embodiments, the second thickness t2, the third thickness t3, the fourth thickness t4, and the fifth thickness t5 may each be in the range between about 100 angstroms and about 0.1 microns. In other embodiments, the second thickness t2, the third thickness t3, the fourth thickness t4, and the fifth thickness t5 may each be in the range between about 0.1 microns and about 1 micron. In other embodiments, the second thickness t2, the third thickness t3, the fourth thickness t4, and the fifth thickness t5 may each be in the range between about 1 micron and about 100 microns. In other embodiments, the second thickness t2, the third thickness t3, the fourth thickness t4, and the fifth thickness t5 may each be in the range between about 100 microns and about 1 millimeter. Nevertheless, the first ratio is greater than 50% to prevent damage at the dielectric layer 106.

[0072] like Fig.12As shown in the cross-sectional view 1200 of FIG. 1 , a patterning step is performed to remove portions of the top electrode 108 and the dielectric layer 106 to expose a peripheral portion 104p of the bottom electrode 104. In some embodiments, the patterning step uses a photoresist to form a mask layer, such as Figure 5 108 and the dielectric layer 106. Then, an etching process (e.g., wet etching, dry etching) may then remove portions of the top electrode 108 and the dielectric layer 106 according to the mask layer. In some embodiments, the etching process removes the top electrode 108 and the dielectric layer 106 in a single step using a single etchant. In other embodiments, the etching process may include multiple steps with different etchants. After the etching process, the mask layer may be stripped.

[0073] In some embodiments, the aforementioned patterning steps including photoresist and etching may leave residual hydrogen ions within the MIM stack 402. However, the hydrogen ions may accumulate in the titanium getter layer 110, which has a higher affinity for hydrogen than the layers in the MIM stack 402. Therefore, the titanium getter layer 110 prevents hydrogen accumulation in the MIM stack 402, and thus, protects the MIM stack 402 from interface delamination, arcing, and ultimately device breakdown.

[0074] like Fig.13 As shown in cross-sectional view 1300 of , in some embodiments, a passivation layer 112 may be deposited over the substrate 102 and the MIM stack 402 .

[0075] like Fig.14 As shown in the cross-sectional view 1400 of FIG. 1 , the passivation layer 112 may be patterned to define a first opening 702 and a second opening 704 in the passivation layer 112. The first opening 702 exposes the top electrode 108, and the second opening 704 exposes the peripheral portion 104p of the bottom electrode 104. In some embodiments, the patterning of the passivation layer 112 may be performed using photolithography and etching.

[0076] like Fig.15 As shown in the cross-sectional view 1500 of FIG. 1 , in some embodiments, the metal layer 804 is deposited over the passivation layer 112. The metal layer 804 may be formed through the first opening ( Fig.14 The first opening 702 of the top electrode 108 is provided, and the metal layer 804 can be provided through the second opening ( Fig.14 The second opening 704 of the bottom electrode 104 contacts the bottom electrode 104. In some embodiments, the metal layer 804 can be deposited by a deposition process such as chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), sputtering, etc. For example, the metal layer 804 includes a conductive material such as copper, aluminum, or tungsten.

[0077] like Fig.16As shown in the cross-sectional view 1600 in FIG. 1 , the patterned metal layer ( Fig.15 metal layer 804) to remove the first opening ( Fig.14 The first opening 702) and the second opening ( Fig.14 The metal layer ( Fig.16 The metal layer 804) makes the remaining metal layer ( Fig.15 The metal layer 804 of FIG. 8 defines a first metal contact 114 a electrically coupled to the top electrode 108 and a second metal contact 114 b electrically coupled to the bottom electrode 104. In some embodiments, the first metal contact 114 a and the second metal contact 114 b may then be coupled to the wire 118 via the solder bump 116.

[0078] Fig.17 Shown as Figures 11 to 16 Flowchart of some embodiments of a method 1700 for a MIM device having a titanium gettering layer above a top electrode is shown in FIG.

[0079] At act 1702, a titanium gettering layer is deposited over a substrate.

[0080] At act 1704, a bottom electrode layer is deposited over the titanium gettering layer.

[0081] At act 1706, a dielectric layer is deposited over the bottom electrode layer.

[0082] At act 1708, a top electrode layer is deposited over the dielectric layer. Fig.11 Cross-sectional view 1100 is shown corresponding to some embodiments of act 1702 , act 1704 , act 1706 , and act 1708 .

[0083] At act 1710, the top electrode layer and the dielectric layer are patterned to expose a peripheral portion of the bottom electrode layer. Fig.12 Cross-sectional view 1200 is shown corresponding to some embodiments of act 1710 .

[0084] At act 1712, a passivation layer is deposited over the substrate, the top electrode layer, and a peripheral portion of the bottom electrode layer. Fig.13 Cross-sectional view 1300 is shown corresponding to some embodiments of act 1712 .

[0085] At act 1714, a first metal contact and a second metal contact are formed. The first metal contact is coupled to the top electrode layer, and the second metal contact is coupled to the bottom electrode layer. Fig.14 and Fig.15 Cross-sectional view 1400 and cross-sectional view 1500 are shown corresponding to some embodiments of act 1714 .

[0086] In addition, it should be understood that Figures 4 to 9 A method of forming a MIM device having a titanium gettering layer disposed above a top electrode as described in Figures 11 to 16 The method of forming a MIM device having a titanium gettering layer disposed below a top electrode described in Figure 3A , wherein a first titanium gettering layer is disposed above the top electrode and a second titanium gettering layer is disposed below the bottom electrode. Figure 4 In the process, an additional titanium gettering layer is deposited over the substrate 102, followed by Figures 4 to 9 The remaining steps described in will form Figure 3A MIM devices in.

[0087] Therefore, embodiments of the present invention are directed to a method for forming a MIM device having a titanium gettering layer disposed below a bottom electrode, above a top electrode, or below the bottom electrode and above the top electrode to prevent hydrogen ions from accumulating in a dielectric layer and subsequently damaging the dielectric layer.

[0088] Therefore, in some embodiments, the present invention relates to a metal-insulator-metal (MIM) device, comprising: a substrate; a first electrode and a second electrode stacked above the substrate; a dielectric layer arranged between the first electrode and the second electrode; and a titanium gettering layer disposed above the substrate and separated from the dielectric layer by the first electrode, wherein the titanium gettering layer has a higher hydrogen gettering ability than the dielectric layer.

[0089] In some embodiments, the titanium gettering layer has a first width, and the first electrode has a second width substantially equal to the first width.

[0090] In some embodiments, the metal-insulator-metal device further includes: a first metal contact electrically coupled to the first electrode; and a second metal contact electrically coupled to the second electrode.

[0091] In some embodiments, the first electrode has a first thickness, the titanium gettering layer has a second thickness, and wherein a ratio of the second thickness to the first thickness is greater than 20%.

[0092] In some embodiments, the titanium getter layer includes oxygen and titanium, and wherein the atomic ratio of oxygen to titanium is less than 50%.

[0093] In some embodiments, the first electrode is above the dielectric layer.

[0094] In some embodiments, the MIM device further includes: an additional titanium gettering layer disposed above the substrate and separated from the dielectric layer by the second electrode.

[0095] In some embodiments, the first electrode is below the dielectric layer.

[0096] In some embodiments, the titanium gettering layer has a higher hydrogen gettering ability than the first electrode and the second electrode.

[0097] In other embodiments, the present invention relates to a metal-insulator-metal (MIM) device, comprising: a MIM stack disposed on a substrate, the MIM stack comprising a dielectric layer between a first electrode layer and a second electrode layer; a titanium gettering layer in contact with the first electrode layer and separated from the dielectric layer by the first electrode layer, wherein the titanium gettering layer has a higher hydrogen gettering capacity than the dielectric layer, and wherein the thickness of the titanium gettering layer is at least 20% of the thickness of the first electrode layer.

[0098] In some embodiments, the titanium getter layer includes oxygen and titanium, and wherein the atomic ratio of oxygen to titanium is less than 50%.

[0099] In some embodiments, the titanium gettering layer is below the metal-insulator-metal stack.

[0100] In some embodiments, the titanium gettering layer is above the metal-insulator-metal stack.

[0101] In some embodiments, the method further includes: an additional titanium gettering layer contacting the second electrode layer and separated from the dielectric layer by the second electrode layer.

[0102] In some embodiments, the titanium getter layer consists of titanium.

[0103] In some embodiments, the MIM device further comprises: a first metal contact extending through the passivation layer and directly contacting the titanium gettering layer; and a second metal contact extending through the passivation layer and directly contacting the second electrode layer.

[0104] In yet other embodiments, the present invention relates to a method of forming a metal-insulator-metal (MIM) device, comprising: depositing a bottom electrode layer over a substrate; depositing a dielectric layer over the bottom electrode layer; depositing a top electrode layer over the dielectric layer; depositing a first titanium gettering layer over the top electrode layer; patterning the first titanium gettering layer, the top electrode layer, and the dielectric layer to expose a peripheral portion of the bottom electrode layer; and depositing a passivation layer over the substrate, the first titanium gettering layer, and a peripheral portion of the bottom electrode layer.

[0105] In some embodiments, before depositing the bottom electrode layer, the method further includes: depositing a second titanium gettering layer over the substrate.

[0106] In some embodiments, the patterning of the first titanium gettering layer, the top electrode layer, and the dielectric layer is performed using a single etchant.

[0107] In some embodiments, the method further includes: patterning the passivation layer to form a first opening exposing the top surface of the first air absorption layer and a second opening exposing the top surface of the bottom electrode layer; forming a first metal contact above the first opening; and forming a second metal contact above the second opening.

[0108] The foregoing summarizes the features of several embodiments so that those skilled in the art can better understand the various aspects of the present invention. Those skilled in the art will appreciate that they can readily use the present invention as a basis for designing or modifying other processes and structures for carrying out the same purposes and / or achieving the same advantages of the embodiments described herein. Those skilled in the art will also recognize that such equivalent constructions do not depart from the spirit and scope of the present invention, and that they may make various changes, substitutions, and modifications herein without departing from the spirit and scope of the present invention.

Claims

1. A metal-insulator-metal device, comprising: substrate; A first electrode and a second electrode are stacked on the substrate; a dielectric layer, arranged between the first electrode and the second electrode; as well as A titanium absorption layer is disposed above the substrate and separated from the dielectric layer by the first electrode, wherein the dielectric layer has a first hydrogen absorption capacity, the titanium absorption layer has a second hydrogen absorption capacity, the first electrode has a third hydrogen absorption capacity, and the second electrode has a fourth hydrogen absorption capacity, wherein the second hydrogen absorption capacity is equal to the third hydrogen absorption capacity and the fourth hydrogen absorption capacity, and the second hydrogen absorption capacity is greater than the first hydrogen absorption capacity. 2 . The MIM device of claim 1 , wherein the titanium gettering layer has a first width, and the first electrode has a second width substantially equal to the first width.

3. The metal-insulator-metal device according to claim 1, further comprising: a first metal contact electrically coupled to the first electrode; as well as The second metal contact is electrically coupled to the second electrode. 4 . The MIM device of claim 1 , wherein the first electrode has a first thickness, the titanium gettering layer has a second thickness, and wherein a ratio of the second thickness to the first thickness is greater than 20%. 5 . The MIM device of claim 1 , wherein the titanium gettering layer comprises oxygen and titanium, and wherein an atomic ratio of oxygen to titanium is less than 50%. The metal-insulator-metal device of claim 1 , wherein the first electrode is above the dielectric layer.

7. The metal-insulator-metal device according to claim 1, further comprising: An additional titanium gettering layer is disposed above the substrate and separated from the dielectric layer by the second electrode.

8. The metal-insulator-metal device of claim 1, wherein the first electrode is below the dielectric layer.

9. A metal-insulator-metal device, comprising: a metal-insulator-metal stack disposed on the substrate, the metal-insulator-metal stack comprising a dielectric layer between a first electrode layer and a second electrode layer; as well as a titanium absorption layer, contacting the first electrode layer and separated from the dielectric layer by the first electrode layer, wherein the dielectric layer has a first hydrogen absorption capacity, the second electrode has a second hydrogen absorption capacity, and the titanium absorption layer has a third hydrogen absorption capacity, wherein the third hydrogen absorption capacity is equal to the second hydrogen absorption capacity, and the third hydrogen absorption capacity is greater than the first hydrogen absorption capacity; as well as The thickness of the titanium gettering layer is at least 20% of the thickness of the first electrode layer. 10 . The MIM device of claim 9 , wherein the titanium gettering layer comprises oxygen and titanium, and wherein an atomic ratio of oxygen to titanium is less than 50%.

11. The metal-insulator-metal device of claim 9, wherein the titanium gettering layer is below the metal-insulator-metal stack.

12. The metal-insulator-metal device of claim 9, wherein the titanium gettering layer is above the metal-insulator-metal stack.

13. The metal-insulator-metal device according to claim 9, further comprising: An additional titanium gettering layer is in contact with the second electrode layer and is separated from the dielectric layer by the second electrode layer.

14. The MIM device of claim 9, wherein the titanium gettering layer consists of titanium.

15. The metal-insulator-metal device according to claim 9, further comprising: a first metal contact extending through the passivation layer and directly contacting the titanium gettering layer; as well as The second metal contact extends through the passivation layer and directly contacts the second electrode layer.

16. A metal-insulator-metal device, comprising: a bottom electrode layer above the substrate; a dielectric layer over the bottom electrode layer; a top electrode layer over the dielectric layer; as well as A titanium gettering layer above the top electrode layer, wherein the top electrode layer has a first thickness, the titanium gettering layer has a second thickness, and wherein a ratio of the second thickness to the first thickness is greater than 20%, wherein the top electrode layer, the bottom electrode layer, and the titanium gettering layer each include titanium and each have a higher affinity for hydrogen ions than the dielectric layer.

17. The MIM device of claim 16, wherein the titanium gettering layer further comprises oxygen, and wherein an atomic ratio of oxygen to titanium is less than 50%.

18. The metal-insulator-metal device of claim 16, further comprising: A passivation layer is located above the titanium gettering layer and on the outer sidewalls of the titanium gettering layer, the top electrode layer, the dielectric layer and the bottom electrode layer.

19. The metal-insulator-metal device according to claim 18, further comprising: A first metal contact extends through the passivation layer to contact the titanium gettering layer.

20. A method of forming a metal-insulator-metal device, comprising: depositing a bottom electrode layer over the substrate; depositing a dielectric layer over the bottom electrode layer; depositing a top electrode layer over the dielectric layer; depositing a first titanium gettering layer over the top electrode layer; patterning the first titanium gettering layer, the top electrode layer, and the dielectric layer to expose a peripheral portion of the bottom electrode layer; as well as A passivation layer is deposited over the substrate, the first titanium gettering layer, and the peripheral portion of the bottom electrode layer.

21. The method of forming a metal-insulator-metal device according to claim 20, wherein before depositing the bottom electrode layer, the method further comprises: A second titanium gettering layer is deposited over the substrate.

22. The method of forming a metal-insulator-metal device of claim 20, wherein the patterning of the first titanium gettering layer, the top electrode layer, and the dielectric layer is performed using a single etchant.

23. The method of forming a metal-insulator-metal device according to claim 20, further comprising: patterning the passivation layer to form a first opening exposing a top surface of the first titanium gettering layer and a second opening exposing a top surface of the bottom electrode layer; forming a first metal contact above the first opening; as well as A second metal contact is formed over the second opening.

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