Micro light emitting diode display element and method for manufacturing the same

Abstract

A micro-LED display element and a manufacturing method thereof, the micro-LED display element comprising a substrate, a plurality of micro-LED units and a light-transmitting insulating layer. The substrate comprises a plurality of conductive pads and a plurality of conductive connecting portions, wherein the conductive pads are arranged on the substrate, and each conductive connecting portion is respectively connected to one of the conductive pads. Each micro-LED unit comprises a semiconductor epitaxial structure and two electrodes, wherein the electrodes are arranged on the semiconductor epitaxial structure and respectively connected to two adjacent conductive connecting portions. The light-transmitting insulating layer is arranged on the substrate and covers the conductive pads, the conductive connecting portions and the micro-LED units, and the light-transmitting insulating layer is filled between the two electrodes of each micro-LED unit. Therefore, the display quality can be improved.

Description

Technical Field

[0001] The present disclosure relates to a display element and a manufacturing method thereof, and in particular to a micro light emitting diode display element and a manufacturing method thereof. Background Art

[0002] Currently, a micro light-emitting diode (Micro LED) unit can be disposed on a substrate by means of wire bonding or flip chip packaging to form a micro LED display element, wherein the flip chip packaging method can effectively reduce the volume of the micro LED display element.

[0003] Generally speaking, the side length of the micro LED unit is less than 100 microns, or even less than 50 microns. Therefore, when the micro LED unit is disposed on the substrate in a flip chip packaging manner, there is no gap between the metal bumps disposed on the electrodes of the micro LED unit, which is prone to short circuit. Furthermore, when the micro LED unit is disposed on the substrate, it is easy to be skewed, resulting in degradation of display quality and poor connection strength between the micro LED unit and the substrate. Summary of the invention

[0004] The present disclosure provides a micro-LED display element and a manufacturing method thereof, which improves the disadvantages of the micro-LED unit being skewed and the short circuit of the conductive connection portion when being arranged on a substrate by setting a light-transmitting insulating layer, and enhances the connection strength and accuracy between the micro-LED unit and the substrate.

[0005] According to one embodiment of the present disclosure, a micro-light emitting diode display element is provided, comprising a substrate, a plurality of micro-light emitting diode units and a light-transmitting insulating layer. The substrate comprises a plurality of conductive pads and a plurality of conductive connecting portions, wherein the conductive pads are arranged on the substrate, and the conductive connecting portions are respectively connected to one of the conductive pads. Each micro-light emitting diode unit comprises a semiconductor epitaxial structure and two electrodes. The electrodes are arranged on the semiconductor epitaxial structure and respectively connected to two adjacent conductive connecting portions. The light-transmitting insulating layer is arranged on the substrate and covers the conductive pads, the conductive connecting portions and the micro-light emitting diode units, and the light-transmitting insulating layer is filled between the two electrodes of each micro-light emitting diode unit. The light-transmitting insulating layer has a first thickness and a second thickness relative to a surface above each semiconductor epitaxial structure, and the first thickness is different from the second thickness.

[0006] According to the micro light emitting diode display device of the above embodiment, the light-transmitting insulating layer may include a thermosetting resin material.

[0007] According to the micro light emitting diode display device of the above-mentioned embodiment, a surface of the light-transmitting insulating layer may be non-planar.

[0008] According to the micro light emitting diode display device of the embodiment described in the previous paragraph, each conductive connecting portion may include a metal material or an anisotropic conductive adhesive material.

[0009] According to the micro light emitting diode display device of the above-mentioned embodiment, the thickness of the light-transmitting insulating layer can be in a range of 10 micrometers to 50 micrometers.

[0010] According to the micro-LED display device of the embodiment described in the previous paragraph, the transparent insulating layer can be divided into a peripheral area and a covering area relative to the surface above each semiconductor epitaxial structure. The peripheral area and the covering area have a first thickness and a second thickness respectively, and the first thickness can be greater than the second thickness.

[0011] According to the micro light emitting diode display device of the embodiment described in the previous paragraph, the peripheral region may cover a portion of the surface above each semiconductor epitaxial structure.

[0012] According to one embodiment of the present disclosure, a micro-LED display element is provided, comprising a substrate, a plurality of micro-LED units and a light-transmitting insulating layer. The substrate comprises a plurality of conductive pads and a plurality of conductive connecting portions, wherein the conductive pads are arranged on the substrate, and the conductive connecting portions are respectively connected to one of the conductive pads. Each micro-LED unit comprises a semiconductor epitaxial structure and two electrodes, wherein the electrodes are arranged on the semiconductor epitaxial structure and respectively connected to two adjacent conductive connecting portions. The light-transmitting insulating layer is arranged on the substrate, and covers the conductive pads, the conductive connecting portions and the micro-LED units, and the light-transmitting insulating layer is filled between the two electrodes of each micro-LED unit, and the light-transmitting insulating layer comprises a plurality of first light-transmitting insulating regions and a plurality of second light-transmitting insulating regions. The first light-transmitting insulating region covers the substrate. The second light-transmitting insulating region is connected to the first light-transmitting insulating region and covers above a surface of each semiconductor epitaxial structure.

[0013] According to the micro light emitting diode display device of the above-mentioned embodiment, each of the first light-transmissive insulating regions may include a thermosetting resin material.

[0014] According to the micro light emitting diode display device of the above-mentioned embodiment, each second light-transmissive insulating region may include a thermosetting resin material or a quantum dot material.

[0015] According to the micro light emitting diode display device of the above-mentioned embodiment, the material of each first light-transmitting insulating region can be different from the material of each second light-transmitting insulating region.

[0016] According to the micro light emitting diode display device of the above-mentioned embodiment, each first light-transmissive insulating region can cover a portion of the surface of each semiconductor epitaxial structure.

[0017] According to an embodiment of the present disclosure, a method for manufacturing a micro-LED display element is provided, comprising a covering step, an inserting step, an exiting step, and a curing step. In the covering step, a light-transmitting insulating layer is covered on a substrate. In the inserting step, a transposition unit is provided to extract a plurality of micro-LED units, and the transposition unit and the micro-LED units are inserted into the light-transmitting insulating layer, and the micro-LED units are arranged on the substrate. In the exiting step, the transposition unit is exited from the light-transmitting insulating layer. In the curing step, after curing the light-transmitting insulating layer, the light-transmitting insulating layer covers the micro-LED units to form a micro-LED display element.

[0018] According to the manufacturing method of the micro-LED display element of the embodiment described in the previous paragraph, the curing step may include a first light-transmitting insulating region forming step and a second light-transmitting insulating region forming step. In the first light-transmitting insulating region forming step, the light-transmitting insulating layer is cured to form a plurality of first light-transmitting insulating regions and a plurality of insertion spaces. In the second light-transmitting insulating region forming step, a light-transmitting insulating material is filled into the insertion space and cured to form a plurality of second light-transmitting insulating regions. The first light-transmitting insulating region and the second light-transmitting insulating region cover the micro-LED unit.

[0019] According to the method for manufacturing a micro-LED display device of the embodiment described in the previous paragraph, the time interval between the placing step and the curing step can be 10 seconds to 60 seconds. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 A flowchart showing the steps of a method for manufacturing a micro-LED display element according to one embodiment of the present invention;

[0021] Figure 2 Show Figure 1 A schematic diagram of a covering step in an embodiment;

[0022] Figure 3 Show Figure 1 A schematic diagram of the insertion step in the embodiment;

[0023] Figure 4 Show Figure 1 Schematic diagram of the exit step and the curing step in the embodiment;

[0024] Figure 5 Show Figure 1 A schematic diagram of a micro light emitting diode display element in an embodiment;

[0025] Figure 6Show Figure 1 A schematic diagram of a micro light emitting diode unit in an embodiment;

[0026] Figure 7 Show Figure 1 A schematic diagram of the arrangement of a micro light emitting diode display element in an embodiment;

[0027] Figure 8 Show Figure 1 Another schematic diagram of the arrangement of a micro light emitting diode display element in an embodiment;

[0028] Fig. 9 A schematic diagram showing a micro light emitting diode display element according to another embodiment of the present invention;

[0029] Fig.10 A flowchart showing a method for manufacturing a micro-LED display element according to another embodiment of the present invention;

[0030] Fig.11 Show Fig.10 A schematic diagram of a covering step in an embodiment;

[0031] Fig.12 Show Fig.10 A schematic diagram of the insertion step in the embodiment;

[0032] Fig.13A Show Fig.10 A schematic diagram of a withdrawal step and a first light-transmitting insulating region forming step in an embodiment;

[0033] Fig. 13B Show Fig.10 A schematic diagram of a step of forming a second light-transmitting insulating region in an embodiment;

[0034] Fig.14 A flowchart showing a method for manufacturing a micro-LED display element according to another embodiment of the present invention;

[0035] Fig.15A Show Fig.14 A schematic diagram of a first light-transmitting insulating region forming step and an exiting step in an embodiment; and

[0036] Fig. 15B Show Fig.14 A schematic diagram of a step of forming a second light-transmitting insulating region in an embodiment.

[0037] Description of reference numerals:

[0038] S100, S300, S400: Method for manufacturing micro light emitting diode display element

[0039] S101, S301, S401: Covering steps

[0040] S102, S302, S402: Insertion step

[0041] S103, S303, S404: Exit step

[0042] S104, S304: Curing step

[0043] S305, S403: First light-transmitting insulating region forming step

[0044] S306, S405: Second light-transmitting insulating region forming step

[0045] 100, 200, 300, 400: Micro LED display components

[0046] 110,210,310,410: Substrate

[0047] 111,211,311,411: Conductive pads

[0048] 112,212,312,412: Conductive connection

[0049] 120,220,320,420: Micro LED units

[0050] 121,221,321,421: Semiconductor epitaxial structure

[0051] 121a, 221a, 321a, 421a: Surface

[0052] 122: First Semiconductor

[0053] 123: Luminous layer

[0054] 124: Second Semiconductor

[0055] 125: Insulation layer

[0056] 126: First electrode

[0057] 127: Second electrode

[0058] 130,230,330,430: light-transmitting insulating layer

[0059] 226,227,326,327,426,427: Electrodes

[0060] 331,431: First light-transmitting insulating area

[0061] 332,432: Second light-transmitting insulating area

[0062] P: Pixel area

[0063] C: Transpose unit

[0064] S: Placement Space

[0065] d1: first thickness

[0066] d2: second thickness

[0067] Ac: Coverage area

[0068] Ap: Peripheral Area

[0069] F: Flow direction DETAILED DESCRIPTION

[0070] Figure 1 FIG. 1 is a flowchart showing a method S100 for manufacturing a micro-LED display device according to an embodiment of the present invention. Figure 1 It can be known that the manufacturing method S100 of the micro light emitting diode display device includes a covering step S101, an inserting step S102, an exiting step S103 and a curing step S104.

[0071] For details, please also refer to Figure 2 , which shows Figure 1 The schematic diagram of step S101 is covered in the embodiment. Figure 1 and Figure 2 It can be seen that in the covering step S101 , a plurality of conductive pads 111 are disposed on the substrate 110 , a conductive connecting portion 112 is disposed on the conductive pads 111 , and a light-transmissive insulating layer 130 is covered on the substrate 110 .

[0072] Next, please refer to Figure 3 , which shows Figure 1 The schematic diagram of step S102 is inserted into the implementation mode. Figure 1 and Figure 3 It can be seen that in the placement step S102, a transfer unit (not shown) is provided to extract a plurality of micro-LED units 120, and the transfer unit and the micro-LED units 120 are placed in the light-transmitting insulating layer 130, and the micro-LED units 120 are arranged on the substrate 110. Specifically, the light-transmitting insulating layer 130 is in a fluid state in both the covering step S101 and the placement step S102, wherein the process temperature of the placement step S102 is between the glass transition temperature and the curing temperature of the light-transmitting insulating layer 130. Therefore, the micro-LED units 120 can be smoothly arranged in the light-transmitting insulating layer 130 and electrically connected to the substrate 110. It is worth mentioning that Figure 1In the embodiment, the micro-LED unit 120 is electrically connected to the substrate 110 by flip-chip eutectic bonding, but the invention is not limited thereto. Specifically, the inserting step S102 is to press the micro-LED unit 120 into the light-transmitting insulating layer 130 and allow the electrodes of the micro-LED unit 120 to contact the conductive pads 111 of the substrate 110.

[0073] Next, please refer to Figure 4 , which shows Figure 1 Schematic diagram of the exit step S103 and the curing step S104 in the embodiment. Figure 1 and Figure 4 It can be seen that in the exit step S103, the transposition unit is exited from the light-transmitting insulating layer 130, and after the light-transmitting insulating layer 130 is cured in the curing step S104, the light-transmitting insulating layer 130 covers the micro-LED unit 120, forming a micro-LED display element 100. In detail, the time interval from the placement step S102 to the curing step S104 is 10 seconds to 60 seconds. Therefore, a eutectic bond is formed to fix the micro-LED unit 120 on the substrate 110, and the light luminance of the micro-LED unit 120 is controlled by the electrical signal of the substrate 110 to display the image.

[0074] Specifically, since the heating time required for curing the light-transmitting insulating layer 130 is longer than the heating time required for welding using the conductive connecting portion 112, in the placement step S102 of bonding the micro-LED unit 120 to the conductive pad 111, the light-transmitting insulating layer 130 will not be completely cured, resulting in the micro-LED unit 120 being unable to be smoothly electrically bonded to the conductive pad 111 of the substrate 110. Figure 1 In an embodiment, the heating time required to cure the light-transmitting insulating layer 130 is about 10 minutes to 120 minutes.

[0075] Furthermore, when the micro-LED unit 120 is placed in the light-transmitting insulating layer 130, since the light-transmitting insulating layer 130 is in a fluid state during the placement step S102, the micro-LED unit 120 can be placed in the light-transmitting insulating layer 130, and the light-transmitting insulating layer 130 will be present between the conductive connecting parts 112 of the substrate 110 during the heating and pressurizing bonding process of the micro-LED unit 120. The light-transmitting insulating layer 130 fills the gaps between the conductive connecting parts 112, thereby avoiding the short circuit between the conductive connecting parts 112. In addition, the fluid light-transmitting insulating layer 130 can exert a liquid damping effect, which helps to fix the setting position of the micro-LED unit 120, so that the micro-LED unit 120 can be further prevented from being skewed when being placed on the substrate 110, thereby improving the connection strength and accuracy between the micro-LED unit 120 and the substrate 110, and increasing the luminous efficiency.

[0076] Please refer to Figure 5 , which shows Figure 1 Schematic diagram of a micro light emitting diode display element 100 in an embodiment. Figure 5 It can be seen that the micro-LED display device 100 includes a substrate 110, a micro-LED unit 120 and a light-transmitting insulating layer 130. The substrate 110 includes a plurality of conductive pads 111 and a plurality of conductive connecting portions 112, wherein the conductive pads 111 are disposed on the substrate 110, and each conductive connecting portion 112 is respectively connected to one of the conductive pads 111. Each micro-LED unit 120 includes a semiconductor epitaxial structure 121 and two electrodes (i.e., a first electrode 126 and a second electrode 127), and the two electrodes are disposed on the semiconductor epitaxial structure 121 and respectively connected to two adjacent conductive connecting portions 112. The light-transmitting insulating layer 130 is disposed on the substrate 110 and covers the conductive pads 111, the conductive connecting portions 112 and the micro-LED unit 120, and the light-transmitting insulating layer 130 is filled between the electrodes (i.e., the first electrode 126 and the second electrode 127) of each micro-LED unit 120. In other words, the micro-LED unit 120 is not exposed above, and the micro-LED unit 120 is completely filled with the light-transmitting insulating layer 130. Generally speaking, the material selected for the light-transmitting insulating layer 130 has a higher refractive index than the micro-LED unit 120, so when the light-emitting surface above the micro-LED unit 120 is covered with the light-transmitting insulating layer 130, the total reflection phenomenon can be effectively avoided, thereby improving the display quality.

[0077] Depend on Figure 4 It can be seen that the light-transmitting insulating layer 130 has a first thickness d1 and a second thickness d2 relative to a surface 121a above each semiconductor epitaxial structure 121, and the first thickness d1 is different from the second thickness d2. Figure 5 Specifically, the light-transmitting insulating layer 130 is divided into a peripheral region Ap and a covering region Ac relative to the surface 121a above each semiconductor epitaxial structure 121, wherein the peripheral region Ap and the covering region Ac have a first thickness d1 and a second thickness d2 respectively, the first thickness d1 is greater than the second thickness d2, and the peripheral region Ap covers a portion of the surface 121a above each semiconductor epitaxial structure 121. That is, after the micro-LED units 120 are placed into the light-transmitting insulating layer 130 through the aforementioned placing step S102 and then the exiting step S103 and the curing step S104 are performed, the portion of the light-transmitting insulating layer 130 corresponding to each micro-LED unit 120 can be concave.

[0078] Specifically, the light-transmitting insulating layer 130 may include a thermosetting resin material, and the thickness of the light-transmitting insulating layer 130 ranges from 10 microns to 50 microns, and further can be 10 microns to 20 microns; it must be noted that the thickness range of the light-transmitting insulating layer 130 refers to the maximum thickness from the light-transmitting insulating layer 130 to the substrate 110. Therefore, the light-transmitting insulating layer 130 can maintain a light transmittance of more than 80% within the thickness range. Each conductive connection portion 112 may include a metal material or anisotropic conductive adhesive material, wherein the metal material can be selected from gold material, tin-lead material, indium material, or an alloy of any combination thereof, but is not limited thereto.

[0079] For further information, please refer to Figure 6 ,in Figure 6 Show Figure 1 Schematic diagram of a micro light emitting diode unit 120 in an embodiment. Figure 5 and Figure 6 It can be seen that the micro LED unit 120 includes a semiconductor epitaxial structure 121, a first electrode 126 and a second electrode 127, wherein the semiconductor epitaxial structure 121 may include a first semiconductor 122, a light emitting layer 123, a second semiconductor 124 and an insulating layer 125, but is not limited to the semiconductor epitaxial structure 121. Figure 6 The form of the micro-LED unit 120 of the embodiment is limited. Specifically, Figure 6 The first electrode 126 and the second electrode 127 of the micro LED unit 120 of the embodiment have substantially coplanar bonding surfaces. In other words, the present invention can be applied to both flip chip and lateral chip embodiments, and the present invention is not limited to the embodiments disclosed herein.

[0080] Please refer to Figure 7 and Figure 8 ,in Figure 7 Show Figure 1 A schematic diagram of the arrangement of the micro light emitting diode display element 100 in the embodiment, Figure 8 Show Figure 1 Another schematic diagram of the arrangement of the micro-LED display element 100 in the embodiment. Figure 7 and Figure 8 It can be seen that the micro LED unit 120 can be disposed on the substrate 110 in two forms. Figure 7 As can be seen from the implementation, three micro-LED units 120 are disposed in the same pixel region P, and each micro-LED unit 120 can be divided into a red sub-pixel, a green sub-pixel and a blue sub-pixel; Figure 8It can be seen from the implementation that six micro-LED units 120 are set in the same pixel area P, and the number of micro-LED units 120 of the same color in the same pixel area P is two, that is, in each sub-pixel, each color includes a spare micro-LED unit 120, but it is not limited to the above configuration.

[0081] Please refer to Fig. 9 , which shows a schematic diagram of a micro light emitting diode display element 200 according to another embodiment of the present invention. Fig. 9 It can be seen that the micro-LED display device 200 includes a substrate 210, a plurality of micro-LED units 220 and a light-transmitting insulating layer 230. The substrate 210 includes a plurality of conductive pads 211 and a plurality of conductive connecting portions 212, wherein the conductive pads 211 are disposed on the substrate 210, and each conductive connecting portion 212 is respectively connected to one of the conductive pads 211. Each micro-LED unit 220 includes a semiconductor epitaxial structure 221 and two electrodes 226, 227, wherein the electrodes 226, 227 are disposed on the semiconductor epitaxial structure 221 and respectively connected to two adjacent conductive connecting portions 212. The light-transmitting insulating layer 230 is disposed on the substrate 210 and covers the conductive pads 211, the conductive connecting portions 212 and the micro-LED units 220, and the light-transmitting insulating layer 230 is filled between the electrodes 226, 227 of each micro-LED unit 220.

[0082] The light-transmitting insulating layer 230 has a first thickness d1 and a second thickness d2 relative to a surface 221a above each semiconductor epitaxial structure 221, and the first thickness d1 is different from the second thickness d2. In further detail, the light-transmitting insulating layer 230 is divided into a peripheral region Ap and a covering region Ac relative to the surface 221a above each semiconductor epitaxial structure 221, wherein the peripheral region Ap and the covering region Ac have a first thickness d1 and a second thickness d2 respectively, the first thickness d1 is greater than the second thickness d2, and the peripheral region Ap covers a portion of the surface 221a above each semiconductor epitaxial structure 221. In other words, the portion of the light-transmitting insulating layer 230 corresponding to each micro-LED unit 220 is concave, and a surface of the light-transmitting insulating layer 230 is non-planar, and the non-planar surface may be generated during the curing step in the manufacturing method of the micro-LED display element. The non-planar surface of the light-transmitting insulating layer 230 can serve as a surface roughening structure of the micro-LED unit 220 , thereby increasing the effective light-emitting area of ​​the micro-LED unit 220 and improving the light-emitting efficiency of the micro-LED display device 200 .

[0083] in addition, Fig. 9 Implementation and Figure 5 The structures and configurations of the remaining components in the embodiment are the same and will not be further described here.

[0084] Please refer to Fig.10 , which shows a flowchart of steps of a method S300 for manufacturing a micro-LED display element according to another embodiment of the present invention. Fig.10 It can be known that the manufacturing method S300 of the micro light emitting diode display device includes a covering step S301 , an inserting step S302 , an exiting step S303 and a curing step S304 .

[0085] For details, please also refer to Fig.11 , which shows Fig.10 The schematic diagram of step S301 is covered in the implementation mode. Fig.10 and Fig.11 It can be seen that in the covering step S301 , a plurality of conductive pads 311 are disposed on the substrate 310 , a conductive connecting portion 312 is disposed on the conductive pads 311 , and a light-transmissive insulating layer 330 is covered on the substrate 310 .

[0086] Next, please refer to Fig.12 , which shows Fig.10 The schematic diagram of step S302 is inserted into the implementation mode. Fig.10 and Fig.12 It can be seen that in the placement step S302, a transfer unit C is provided to extract a plurality of micro-LED units 320, and the transfer unit C and the micro-LED units 320 are placed in the light-transmitting insulating layer 330, and the micro-LED units 320 are arranged on the substrate 310. Specifically, the light-transmitting insulating layer 330 is in a fluid state in both the covering step S301 and the placement step S302, wherein the process temperature of the placement step S302 is between the glass transition temperature and the curing temperature of the light-transmitting insulating layer 330. Therefore, the micro-LED units 320 can be smoothly placed in the light-transmitting insulating layer 330 and electrically connected to the substrate 310. Fig.12 In the embodiment, the packaging method of the micro LED unit 320 disposed on the substrate 310 is flip-chip eutectic bonding, but the present invention is not limited thereto.

[0087] Next, please refer to Fig.13A and Fig. 13B ,in Fig.13A Show Fig.10 A schematic diagram of exiting step S303 and forming step S305 of the first light-transmitting insulating region in an embodiment, Fig. 13B Show Fig.10 Schematic diagram of the second light-transmitting insulating region forming step S306 in the embodiment. Fig.10 , Fig.13A and Fig. 13BIt can be known that the curing step S304 may include a first light-transmitting insulating region forming step S305 and a second light-transmitting insulating region forming step S306. The time interval between the placing step S302 and the curing step S304 is 10 seconds to 60 seconds. Specifically, Fig.13A In an implementation manner, the time interval from the placing step S302 to the first light-transmitting insulating region forming step S305 is 10 seconds to 60 seconds.

[0088] In detail, by Fig.10 and Fig.13A It can be seen that in the exit step S303, the transfer unit C is exited from the light-transmitting insulating layer 330, and in the first light-transmitting insulating region forming step S305, the light-transmitting insulating layer 330 is solidified so that the light-transmitting insulating layer 330 covers the micro-LED unit 320 to form multiple first light-transmitting insulating regions 331 and multiple insertion spaces S.

[0089] like Fig.13A As shown, after the transfer unit C is moved out of the light-transmitting insulating layer 330 , if the light-transmitting insulating layer 330 is left still for a period of time, the light-transmitting insulating layer 330 flows inward in a flow direction F due to gravity, thereby covering the micro-LED unit 320 .

[0090] Continue to refer to Fig. 13B In the second light-transmitting insulating region forming step S306, a light-transmitting insulating material (not shown) is filled into the insertion space S and solidified to form a plurality of second light-transmitting insulating regions 332, wherein the first light-transmitting insulating region 331 and the second light-transmitting insulating region 332 cover the micro light-emitting diode unit 320.

[0091] Depend on Fig.13A and Fig. 13B It can be seen that the micro-LED display device 300 includes a substrate 310, a micro-LED unit 320 and a light-transmitting insulating layer 330. The substrate 310 includes a plurality of conductive pads 311 and a plurality of conductive connecting portions 312, wherein the conductive pads 311 are disposed on the substrate 310, and each conductive connecting portion 312 is respectively connected to one of the conductive pads 311. Each micro-LED unit 320 includes a semiconductor epitaxial structure 321 and two electrodes 326, 327, wherein the electrodes 326, 327 are disposed on the semiconductor epitaxial structure 321 and respectively connected to two adjacent conductive connecting portions 312. The light-transmitting insulating layer 330 is disposed on the substrate 310 and covers the conductive pads 311, the conductive connecting portions 312 and the micro-LED unit 320, and the light-transmitting insulating layer 330 is filled between the electrodes 326, 327 of each micro-LED unit 320.

[0092] In detail, the light-transmitting insulating layer 330 includes a plurality of first light-transmitting insulating regions 331 and a plurality of second light-transmitting insulating regions 332. The first light-transmitting insulating regions 331 are covered on the substrate 310 and cover a portion of a surface 321a of each semiconductor epitaxial structure 321. The second light-transmitting insulating regions 332 are connected to the first light-transmitting insulating regions 331 and cover the upper portion of the surface 321a of each semiconductor epitaxial structure 321.

[0093] Specifically, the light-transmitting insulating layer 330 is divided into a peripheral region Ap and a covering region Ac relative to the surface 321 a above each semiconductor epitaxial structure 321 , and the peripheral region Ap covers a portion of the surface 321 a above each semiconductor epitaxial structure 321 . Fig. 13B In the embodiment, the covering area Ac is covered by the first light-transmitting insulating region 331 and the second light-transmitting insulating region 332 of the light-transmitting insulating layer 330 ; and the peripheral area Ap is only covered by the first light-transmitting insulating region 331 .

[0094] Furthermore, each first light-transmitting insulating region 331 may include a thermosetting resin material, each second light-transmitting insulating region 332 may include a thermosetting resin material or a quantum dot material, and the material of each first light-transmitting insulating region 331 may be different from the material of each second light-transmitting insulating region 332, but the invention is not limited thereto. Furthermore, the quantum dot material functions like a color filter and can be used to convert the color of light. For example, when the micro-LED unit 320 is a blue sub-pixel, it can be converted into a red sub-pixel or a green sub-pixel through the quantum dot material, and the color purity of the light converted through the quantum dot material is high.

[0095] Please refer to Fig.14 , which shows a flowchart of the steps of a method S400 for manufacturing a micro-LED display element according to another embodiment of the present invention. Fig.14 It can be seen that the manufacturing method S400 of the micro light emitting diode display device includes a covering step S401, an inserting step S402, a first light-transmitting insulating region forming step S403, an exiting step S404 and a second light-transmitting insulating region forming step S405.

[0096] In detail, Fig.14 The covering step S401 and the inserting step S402 of the embodiment can be referred to respectively. Fig.11 and Fig.12 ,because Fig.14 The covering step S401 and the inserting step S402 of the embodiment Fig.10 The covering step S301 and the inserting step S302 of the implementation method are the same and will not be further described here.

[0097] Furthermore, please also refer to Fig.14 and Fig.15A ,in Fig.15A Show Fig.14 Schematic diagram of the first light-transmitting insulating region forming step S403 and the exiting step S404 in the embodiment. Fig.14 and Fig.15A It can be seen that in the first light-transmitting insulating region forming step S403, the light-transmitting insulating layer 430 (indicated by Fig. 15B ) to form a plurality of first light-transmitting insulating regions 431 and a plurality of insertion spaces S, and in the exit step S404, the transposition unit (not shown) is exited from the light-transmitting insulating layer 430. Specifically, when the micro-LED unit 420 is disposed on the substrate 410 through the transposition unit, the first light-transmitting insulating region forming step S403 is first performed to solidify the light-transmitting insulating layer 430 to form the first light-transmitting insulating region 431. After the light-transmitting insulating layer 430 is solidified, the exit step S404 is performed to exit the transposition unit to form a plurality of insertion spaces S. Therefore, the exposure step, the development step, and the etching step can be saved to obtain the insertion space S, and expose a portion of the surface 421a of the semiconductor epitaxial structure 421. In addition, the order of the exit step and the first light-transmitting insulating region forming step can be adjusted according to demand to flexibly form the following structure: Fig.13A The insertion space S of the embodiment or Fig.15A The insertion space S of the embodiment.

[0098] Please refer to Fig. 15B , which shows Fig.14 Schematic diagram of the second light-transmitting insulating region forming step S405 in the embodiment. Fig.14 and Fig. 15B It can be seen that in the second light-transmitting insulating region forming step S405, a light-transmitting insulating material (not shown) is filled into the insertion space S and solidified to form a plurality of second light-transmitting insulating regions 432, wherein the first light-transmitting insulating region 431 and the second light-transmitting insulating region 432 (i.e., the light-transmitting insulating layer 430) cover the micro-LED unit 420.

[0099] in addition, Fig.15A and Fig. 15B Implementation and Fig.13A and Fig. 13B The structures and configurations of the remaining components in the embodiment are the same and will not be further described here.

[0100] Depend on Fig.15A and Fig. 15BIt can be seen that the micro-LED display device 400 includes a substrate 410, a micro-LED unit 420 and a light-transmitting insulating layer 430. The substrate 410 includes a plurality of conductive pads 411 and a plurality of conductive connecting portions 412, wherein the conductive pads 411 are disposed on the substrate 410, and each conductive connecting portion 412 is respectively connected to one of the conductive pads 411. Each micro-LED unit 420 includes a semiconductor epitaxial structure 421 and two electrodes 426, 427, wherein the electrodes 426, 427 are disposed on the semiconductor epitaxial structure 421 and respectively connected to two adjacent conductive connecting portions 412. The light-transmitting insulating layer 430 is disposed on the substrate 410 and covers the conductive pads 411, the conductive connecting portions 412 and the micro-LED unit 420, and the light-transmitting insulating layer 430 is filled between the electrodes 426, 427 of each micro-LED unit 420. In detail, the light-transmitting insulating layer 430 includes a plurality of first light-transmitting insulating regions 431 and a plurality of second light-transmitting insulating regions 432. The first light-transmitting insulating regions 431 are covered on the substrate 410 and cover a portion of the surface 421a of each semiconductor epitaxial structure 421. The second light-transmitting insulating regions 432 are connected to the first light-transmitting insulating regions 431 and cover the top of the surface 421a of each semiconductor epitaxial structure 421.

[0101] Specifically, the light-transmitting insulating layer 430 is divided into a peripheral region Ap and a covering region Ac relative to the surface 421 a above each semiconductor epitaxial structure 421 , and the peripheral region Ap covers a portion of the surface 421 a above each semiconductor epitaxial structure 421 . Fig. 15B In the embodiment, the covering area Ac and the peripheral area Ap are covered by the second light-transmitting insulating area 432 and the first light-transmitting insulating area 431 respectively. Fig.14 Implementation and Figure 5 , Fig.10 The structures and configurations of the remaining components in the embodiment are the same and will not be further described here.

[0102] In summary, by setting up the light-transmitting insulating layer, the short circuit caused by the lack of gaps between the conductive connecting parts can be avoided, and the condition where the micro-LED unit is set crooked on the substrate can be improved, thereby improving the connection strength and accuracy between the micro-LED unit and the substrate, and increasing the luminous efficiency of the micro-LED unit.

[0103] Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Any technician in the relevant technical field can make some changes and modifications without departing from the concept and scope of the present invention. Therefore, the scope of protection of the present invention shall be based on what is defined in the claims.

Claims

1. A micro light emitting diode display element, characterized in that: Include: A substrate comprising: A plurality of conductive pads are disposed on the substrate; and A plurality of conductive connecting portions, each correspondingly connected to one of the conductive pads; A plurality of micro light emitting diode units, each of which comprises: a semiconductor epitaxial structure; and Two electrodes are disposed on the semiconductor epitaxial structure and are respectively connected to two adjacent conductive connection portions; and a light-transmitting insulating layer, disposed on the substrate and covering the plurality of conductive pads, the plurality of conductive connecting portions and the plurality of micro-LED units, and the light-transmitting insulating layer is filled between the two electrodes of each of the micro-LED units; Among them, the light-transmitting insulating layer is divided into a peripheral area and a covering area relative to a surface above each of the semiconductor epitaxial structures. The peripheral area and the covering area respectively have a first thickness and a second thickness, and the first thickness is greater than the second thickness. The covering area is surrounded by the peripheral area and is concave. The light-transmitting insulating layer is connected to a portion of each of the micro-light-emitting diode units between the semiconductor epitaxial structures and has a roughened structure with a non-flat surface, and the roughened structure is concave relative to the peripheral areas.

2. The micro light emitting diode display element according to claim 1, characterized in that: The light-transmitting insulating layer includes a thermosetting resin material.

3. The micro light emitting diode display device according to claim 1, characterized in that: Each of the conductive connecting parts includes a metal material or anisotropic conductive adhesive material.

4. The micro light emitting diode display device according to claim 1, characterized in that: The thickness of the light-transmitting insulating layer ranges from 10 micrometers to 50 micrometers.

5. The micro light emitting diode display device according to claim 1, characterized in that: The peripheral region covers a portion of the surface above each of the semiconductor epitaxial structures.

6. A method for manufacturing a micro light emitting diode display element, characterized in that: Include: a covering step, in which a light-transmitting insulating layer is covered on a substrate; an inserting step, wherein a transfer unit is provided to extract a plurality of micro-LED units, and the transfer unit and the plurality of micro-LED units are placed in the light-transmitting insulating layer, and the plurality of micro-LED units are arranged on the substrate; an exit step, wherein the transposition unit is exited from the light-transmitting insulating layer; as well as A curing step, wherein after curing the light-transmitting insulating layer, the light-transmitting insulating layer covers the plurality of micro-LED units to form a micro-LED display element.

7. The method for manufacturing a micro light emitting diode display element according to claim 6, wherein: The curing step includes: a first light-transmitting insulating region forming step, wherein the light-transmitting insulating layer is cured to form a plurality of first light-transmitting insulating regions and a plurality of insertion spaces; and a second light-transmitting insulating region forming step, wherein a light-transmitting insulating material is filled into the plurality of insertion spaces and cured to form a plurality of second light-transmitting insulating regions; The plurality of first light-transmitting insulating regions and the plurality of second light-transmitting insulating regions cover the plurality of micro light-emitting diode units.

8. The method for manufacturing a micro light emitting diode display element according to claim 6, wherein: The time interval between the placing step and the curing step is 10 seconds to 60 seconds.

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