Substrate bonding equipment

Abstract

A substrate bonding device is described. The substrate bonding device is used to bond a first substrate to a second substrate. The substrate bonding device includes: a first bonding chuck configured to hold the first substrate on a first surface of the first bonding chuck; a second bonding chuck configured to hold the second substrate on a second surface of the second bonding chuck, the second surface facing the first surface of the first bonding chuck; a sealing member arranged between the first bonding chuck and the second bonding chuck and adjacent to at least one edge of the first substrate and at least one edge of the second substrate; and a process gas supply device configured to supply a process gas to a bonding space surrounded by the sealing member.

Description

[0001] This application claims priority to and the benefit of Korean Patent Application No. 10-2019-0101873 filed on August 20, 2019, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0002] The inventive concept relates to a substrate bonding apparatus and a method of manufacturing a semiconductor device using the substrate bonding apparatus. Background Art

[0003] A semiconductor device is an electrical component that uses the properties of semiconductor materials for its primary function. Semiconductor devices are used in applications such as cell phones, televisions, cameras, and computers. Various manufacturing processes are used to create semiconductor devices.

[0004] The substrate bonding process is an example process for manufacturing semiconductor devices. The direct bonding process is an example of a substrate bonding process. The direct bonding process bonds two surfaces of different wafers to produce a single substrate, thereby providing a stacked semiconductor wafer for a semiconductor device.

[0005] However, defects that create voids between wafers can occur during direct bonding processes. For example, when wafers are bonded together, water vapor condenses, causing void defects. Void defects can cause degradation of the bonded wafers. Therefore, there is a need in the art for a wafer bonding method and apparatus to reduce water vapor condensation during direct bonding processes of semiconductor wafers. Summary of the invention

[0006] The inventive concept provides a substrate bonding apparatus and a method of manufacturing a semiconductor device using the substrate bonding apparatus.

[0007] According to one aspect of the inventive concept, a substrate bonding device for bonding a first substrate to a second substrate is provided, the substrate bonding device comprising: a first bonding suction cup, configured to hold the first substrate on a first surface of the first bonding suction cup; a second bonding suction cup, configured to hold the second substrate on a second surface of the second bonding suction cup, the second surface facing the first surface of the first bonding suction cup; a sealing member, arranged between the first bonding suction cup and the second bonding suction cup and adjacent to at least one edge of the first substrate and at least one edge of the second substrate, and configured to close a bonding space; and a processing gas supply device, configured to supply processing gas to the bonding space closed by the sealing member.

[0008] According to another aspect of the inventive concept, a substrate bonding device for bonding a first substrate to a second substrate is provided, the substrate bonding device comprising: a first bonding suction cup configured to hold the first substrate on a first surface of the first bonding suction cup; a second bonding suction cup configured to hold the second substrate on a second surface of the second bonding suction cup, the second surface facing the first surface of the first bonding suction cup; a sealing member arranged between the first bonding suction cup and the second bonding suction cup and adjacent to at least one edge of the first substrate and at least one edge of the second substrate; a process gas supply device configured to supply a process gas to a bonding space surrounded by the sealing member, the process gas The gas supply device includes a temperature controller and a pressure controller, the temperature controller is configured to adjust the temperature of the processing gas, and the pressure controller is configured to adjust the pressure of the processing gas; a temperature sensor is configured to sense the temperature of the bonding space; a pressure sensor is configured to sense the pressure of the bonding space; and a controller is configured to control the temperature controller and the pressure controller, wherein the controller is configured to: generate a feedback temperature control signal for controlling the temperature controller based on the temperature of the bonding space sensed by the temperature sensor; and generate a feedback pressure control signal for controlling the pressure controller based on the pressure of the bonding space sensed by the pressure sensor.

[0009] According to another aspect of the inventive concept, a substrate bonding device for bonding a first substrate to a second substrate is provided, the substrate bonding device comprising: a first bonding suction cup, configured to hold the first substrate on a first surface of the first bonding suction cup; a second bonding suction cup, configured to hold the second substrate on a second surface of the second bonding suction cup, the second surface facing the first surface of the first bonding suction cup; a seal, arranged between the first bonding suction cup and the second bonding suction cup and adjacent to at least one edge of the first substrate and at least one edge of the second substrate; and a process gas supply device, configured to supply process gas to a bonding space surrounded by the seal, the process gas supply device comprising a temperature controller configured to adjust the temperature of the process gas and a pressure controller configured to adjust the pressure of the process gas, wherein the seal comprises: a first part, detachably coupled to the first bonding suction cup; and a second part, coupled to the second bonding suction cup, and the first part of the seal is coupled to the first bonding suction cup by the vacuum pressure applied to the vacuum groove of the first bonding suction cup, thereby defining the bonding space.

[0010] According to another aspect of the inventive concept, a method for manufacturing a semiconductor device is provided, the method comprising: aligning a second bonding suction cup on which a second substrate is arranged with a first bonding suction cup on which a first substrate is arranged, so that the second bonding suction cup is arranged above the first bonding suction cup; forming a bonding space between the first bonding suction cup and the second bonding suction cup by fixing a seal between the first bonding suction cup and the second bonding suction cup, the bonding space being surrounded by the seal and the seal surrounding an edge of the first substrate and an edge of the second substrate; supplying a processing gas to the bonding space; and bonding the first substrate to the second substrate.

[0011] According to another aspect of the inventive concept, a method for manufacturing a semiconductor device includes: providing a first substrate disposed on a first bonding chuck and a second substrate disposed on a second bonding chuck, wherein the first substrate and the second substrate are located between the first bonding chuck and the second bonding chuck; providing a seal in direct contact with the first bonding chuck and the second bonding chuck to close a bonding space between the first bonding chuck and the second bonding chuck; supplying a process gas to the bonding space, the process gas having a small reactivity with the first substrate and the second substrate compared to an ambient gas outside the bonding space; and bonding the first substrate to the second substrate. In some cases, a purge gas may be supplied to the bonding space after the first substrate is bonded to the second substrate to exhaust the process gas from the bonding space. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Embodiments of the inventive concept will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:

[0013] Figure 1 is a cross-sectional view illustrating a substrate bonding apparatus according to an example embodiment of the inventive concept;

[0014] Figure 2 It is shown by Figure 1 An enlarged cross-sectional view of the area indicated by "II" in FIG.

[0015] Figure 3 is a cross-sectional view illustrating a portion of a substrate bonding apparatus according to an example embodiment of the inventive concept;

[0016] Figure 4 is a plan view illustrating a second bonding chuck of a substrate bonding apparatus according to an example embodiment of the inventive concept;

[0017] Figure 5 is a cross-sectional view illustrating a substrate bonding apparatus according to an example embodiment of the inventive concept;

[0018] Figure 6 It is schematically shown Figure 5 A plan view of the seal shown in ;

[0019] Figure 7 is a flowchart illustrating a substrate bonding method according to an example embodiment of the inventive concept;

[0020] FIG. 8A to FIG. 8G is a conceptual diagram illustrating sequential processes of a substrate bonding method according to an example embodiment of the inventive concept;

[0021] Fig. 9 is a flowchart illustrating a method of manufacturing a semiconductor device according to an example embodiment of the inventive concept; and

[0022] Fig. 10A and Fig. 10B are cross-sectional views illustrating sequential processes of bonding a first substrate to a second substrate. DETAILED DESCRIPTION

[0023] The present disclosure relates to systems and methods for reducing water vapor associated with manufacturing defects between bonded wafers. Conventional methods supply process gas to an open space during bonding. According to an embodiment of the present disclosure, a sealed bonding space can be formed by using a physical seal during a semiconductor bonding process. A process gas such as helium can be supplied to the sealed bonding space to control the temperature and pressure of the sealed bonding space.

[0024] When a bonding process between two wafers is performed in a sealed bonding space in which the temperature and pressure of the sealed bonding space have been controlled, defects due to water vapor condensation, temperature / pressure non-uniformity, etc. can be reduced.

[0025] In addition, the present disclosure provides a method and apparatus for supplying a process gas to a bonding space sealed by a seal. The sealed bonding space provides uniform control of the pressure of the bonding space.

[0026] The seal may be an annular member, the upper portion of which is bonded to the upper bonding chuck, and the lower portion of which is attached to the lower bonding chuck (eg, by vacuum suction). Additionally, the seal may include a flexible material such as rubber to absorb vibrations.

[0027] Hereinafter, embodiments of the inventive concept will be described in detail with reference to the accompanying drawings. Throughout the specification, the same components will be denoted by the same reference numerals, and repeated descriptions thereof will be omitted.

[0028] Figure 1 is a cross-sectional view illustrating a substrate-bonding apparatus 100 according to an example embodiment of the inventive concept.

[0029] Figure 2 It is shown by Figure 1 An enlarged cross-sectional view of the area indicated by "II".

[0030] Reference Figure 1 and Figure 2 The substrate bonding apparatus 100 may include a first bonding chuck 110 , a second bonding chuck 120 , a sealing member 130 , a vacuum pump 140 , a process gas supply device 150 , a purge gas supply device 160 , and an exhaust device 170 .

[0031] The first bonding chuck 110 may support a first substrate W1 mounted on a first surface 119 of the first bonding chuck 110. In example embodiments, the first substrate W1 may be a single crystal substrate. In example embodiments, the first substrate W1 may be a silicon wafer.

[0032] For example, the first bonding suction cup 110 may be configured to hold (or fix) the first substrate W1 by using vacuum pressure or electrostatic force. When the first bonding suction cup 110 is configured to hold the first substrate W1 by using vacuum pressure, the first bonding suction cup 110 may be configured to apply a pressure lower than the ambient pressure to one surface of the first substrate W1. The first substrate W1 faces the first surface 119 of the first bonding suction cup 110. The first surface 119 may be a supporting surface of the first bonding suction cup 110. For example, the first bonding suction cup 110 may have a vacuum path formed therein and exposed at the first surface 119 of the first bonding suction cup 110. The vacuum path may be connected to a vacuum pump 140 for applying vacuum pressure. When the first bonding suction cup 110 is configured to hold the first substrate W1 by using electrostatic force, the first bonding suction cup 110 may include an electrode that receives applied power and generates electrostatic force for fixing the first substrate W1.

[0033] The second bonding chuck 120 may support a second substrate W2 mounted on a second surface 129 of the second bonding chuck 120. In example embodiments, the second substrate W2 may be a single crystal substrate. In example embodiments, the second substrate W2 may be a silicon wafer.

[0034] The second bonding suction cup 120 may be configured to hold the second substrate W2 by using vacuum pressure or electrostatic force. Here, the first bonding suction cup 110 may be a lower bonding suction cup. The second bonding suction cup 120 may be an upper bonding suction cup arranged above the first bonding suction cup 110. The second surface 129 of the second bonding suction cup 120 may face the first surface 119 of the first bonding suction cup 110. The first bonding surface of the first substrate W1 supported by the first bonding suction cup 110 may face the second bonding surface of the second substrate W2 supported by the second bonding suction cup 120. However, the inventive concept is not limited thereto, and the second bonding suction cup 120 may be a lower bonding suction cup. The first bonding suction cup 110 may be an upper bonding suction cup arranged above the second bonding suction cup 120.

[0035] The seal 130 may be disposed between the first bonding chuck 110 and the second bonding chuck 120. In addition, the seal 130 may surround both the edge of the first substrate W1 supported by the first bonding chuck 110 and the edge of the second substrate W2 supported by the second bonding chuck 120. For example, the seal 130 may be an annular member. The seal 130 may be positioned adjacent to at least one edge of the first bonding chuck 110 and the second bonding chuck 120, and may close the space between the first bonding chuck 110 and the second bonding chuck 120 (i.e., the bonding space 101).

[0036] When a lower portion of the sealant 130 is bonded to the first bonding chuck 110 and an upper portion of the sealant 130 is bonded to the second bonding chuck 120 , a bonding space 101 defined by the sealant 130 may be formed between a first surface 119 of the first bonding chuck 110 and a second surface 129 of the second bonding chuck 120 .

[0037] In example embodiments, the sealant 130 may seal the bonding space 101 while performing bonding between the first substrate W1 and the second substrate W2 .

[0038] In an example embodiment, the seal 130 may include a first portion 131. The first portion 131 is detachably coupled to the second portion 133 and the first surface 119 of the first bonding suction cup 110. The second portion 133 is opposite to the first portion 131 and coupled to the second surface 129 of the second bonding suction cup 120. The first portion 131 of the seal 130 may be a lower portion of the seal 130. The second portion 133 of the seal 130 may be an upper portion of the seal 130. For example, the second portion 133 of the seal 130 may be mechanically fixed to the second bonding suction cup 120. In this case, the first portion 131 of the seal 130 may be coupled to the first bonding suction cup 110 to seal the bonding space 101. In addition, the first portion 131 of the seal 130 may be decoupled from the first bonding suction cup 110. Therefore, the separation causes the bonding space 101 inside the seal 130 to communicate with the external space 103 outside the seal 130.

[0039] In example embodiments, the first portion 131 of the sealant 130 may be attached to the first bonding chuck 110 by vacuum suction. The first bonding chuck 110 may include a vacuum groove 111. The vacuum groove 111 may be exposed at a position spaced apart from the outer edge of the first substrate W1 while being disposed at the first surface 119 of the first bonding chuck 110.

[0040] In example embodiments, the first bonding chuck 110 may include a plurality of vacuum grooves 111. The plurality of vacuum grooves 111 may be arranged to be spaced apart from each other at substantially regular intervals along an outer circumference of the first bonding chuck 110. Distances between a center of the first bonding chuck 110 and the corresponding plurality of vacuum grooves 111 may be substantially equal.

[0041] The vacuum pump 140 may be connected to the vacuum groove 111 of the first bonding suction cup 110 via a vacuum line 141. A shut-off valve 143 may be installed on the vacuum line 141. The vacuum pump 140 may be configured to apply vacuum pressure in the vacuum groove 111 or release vacuum pressure. The vacuum pump 140 may hold the first portion 131 of the seal 130 to the first surface 119 of the first bonding suction cup 110 by applying vacuum pressure to the vacuum groove 111 of the first bonding suction cup 110. In addition, the vacuum pump 140 may place the first portion 131 of the seal 130 in a detachable state from the first surface 119 of the first bonding suction cup 110 by releasing vacuum pressure from the vacuum groove 111 of the first bonding suction cup 110.

[0042] The seal 130 may include a flexible material and thus function as a damper that absorbs vibrations when disposed between the first bonding chuck 110 and the second bonding chuck 120. For example, the seal 130 may absorb vibrations generated by the first bonding chuck 110 and / or the second bonding chuck 120. In example embodiments, the seal 130 may include rubber, silicone, or a flexible synthetic resin.

[0043] In an example embodiment, the seal 130 may include a connecting portion 135 extending obliquely between the first portion 131 and the second portion 133. Figure 2 As shown in , since the first portion 131 of the seal 130 is farther from the edge of the first bonding suction cup 110 than the second portion 133 of the seal 130 in the horizontal direction (e.g., the X direction and / or the Y direction), the connecting portion 135 may be inclined downward from the second portion 133 toward the first portion 131. When the first portion 131 and the second portion 133 are respectively held to the first bonding suction cup 110 and the second bonding suction cup 120, the connecting portion 135 may effectively absorb shock or vibration applied to the seal 130 in the lateral direction while flexibly moving or changing shape in the lateral direction.

[0044] The process gas supply device 150 may supply a process gas having a certain temperature and a certain pressure to the bonding space 101 surrounded by the seal 130. For example, the process gas supply device 150 may include a process gas source 151, a process gas supply line 157, and a shut-off valve 159 installed on the process gas supply line 157. The process gas supply line 157 may provide a path through which the process gas flows. The process gas supply line 157 extends between the process gas source 151 and the process gas supply hole 121 arranged in the second bonding chuck 120.

[0045] The process gas supply device 150 may supply the process gas to the bonding space 101 through the process gas supply hole 121 arranged in the second bonding chuck 120. For example, the process gas supply hole 121 may be arranged between the edge of the second substrate W2 and the seal 130. The process gas supply hole 121 may supply the process gas to the bonding space 101. The process gas may have minimal reactivity with the first substrate W1, the material film on the first substrate W1, the second substrate W2, the material film on the second substrate W2, etc. In an example embodiment, the process gas supply device 150 may be configured to supply helium (He), nitrogen (N 2 ), argon (Ar), or a combination thereof.

[0046] The process gas supply device 150 may include a temperature controller 153 installed on the process gas supply line 157. The temperature controller 153 may include various devices. The device may be a heater, a cooler, a heat exchanger, a temperature regulator, etc. The device is used to maintain or change the temperature of the process gas flowing along the process gas supply line 157.

[0047] In addition, the process gas supply device 150 may include a pressure controller 155 installed on the process gas supply line 157. The pressure controller 155 may include various devices for maintaining the pressure of the process gas constant or changing the pressure of the process gas flowing along the process gas supply line 157. The pressure controller 155 may include a pressure regulator or a pressure control valve. For example, the pressure controller 155 may include a servo valve and a solenoid valve.

[0048] Although Figure 1 It is shown that the process gas supplied from the process gas source 151 sequentially passes through the temperature controller 153 and the pressure controller 155 in the order stated here, but the pressure controller 155 may be arranged between the temperature controller 153 and the process gas source 151. In addition, the temperature controller 153 and the pressure controller 155 may be implemented by a single device in which their functions are integrated.

[0049] Although in Figure 1 and Figure 2 Although not shown, the process gas supply device 150 may include various sensors configured to sense the temperature and pressure of the process gas passing through the temperature controller 153 and the pressure controller 155. The process gas supply device 150 may also include a mass flow controller for controlling the flow rate of the process gas.

[0050] When the bonding space 101 is sealed by the sealing member 130, the process gas supply device 150 may fill the bonding space 101 with the process gas by supplying the process gas to the bonding space 101. Here, the process gas supply device 150 may adjust the temperature and pressure of the bonding space 101 by adjusting the temperature and pressure of the process gas supplied to the bonding space 101.

[0051] The purge gas supply device 160 can supply a purge gas to the bonding space 101. For example, the purge gas supply device 160 may include a purge gas source 161, a purge gas supply line 163, and a shut-off valve 165 installed on the purge gas supply line 163, and the purge gas supply line 163 provides a path through which the purge gas flows. The purge gas supply line 163 extends 120 between the purge gas source 161 and a purge gas supply hole 123 arranged in the second bonding suction cup 120. For example, the purge gas supply device 160 can supply a purge gas to the bonding space 101 through the purge gas supply hole 123. For example, the purge gas supply hole 123 can be arranged between the edge of the second substrate W2 and the sealing member 130. For example, the purge gas supply device 160 can be configured to supply nitrogen (N 2 ) air, clean air, dry air, etc.

[0052] The exhaust device 170 can exhaust the bonding space 101. For example, the exhaust device 170 may include a vacuum pump 140, an exhaust line 171, and a shut-off valve 173 installed on the exhaust line 171. The exhaust line 171 may extend between the vacuum pump 140 and the exhaust hole 125 of the second bonding suction cup 120. The vacuum pump 140 may be configured to exhaust the bonding space 101 through the exhaust line 171. The vacuum pump 140 may also be configured to maintain the seal 130 by vacuum suction through the vacuum line 141. Optionally, in other example embodiments, the substrate bonding device 100 may also include another exhaust pump for exhausting the bonding space 101, which is separate from the vacuum pump 140 for vacuum suction of the seal 130.

[0053] The exhaust device 170 may remove gas from the bonding space 101 through the exhaust hole 125 disposed in the second bonding chuck 120. When the bonding between the first substrate W1 and the second substrate W2 is completed, the exhaust device 170 may remove gas from the bonding space 101. In addition, during the bonding between the first substrate W1 and the second substrate W2, the exhaust device 170 may reduce the pressure of the bonding space 101 to an appropriate level by partially releasing gas from the bonding space 101. During the bonding between the first substrate W1 and the second substrate W2, the pressure of the bonding space 101 is greater than the target pressure.

[0054] When bonding between the first substrate W1 and the second substrate W2 is completed, the exhaust device 170 may exhaust the process gas from the bonding space 101 sealed by the seal 130. As a result, the purge gas supply device 160 may supply the purge gas to the sealed bonding space 101. In example embodiments, the purge gas supply device 160 may fill the bonding space 101 with the purge gas so that the pressure of the bonding space 101 sealed by the seal 130 is the atmospheric pressure.

[0055] During the bonding between the first substrate W1 and the second substrate W2, when the center of the second substrate W2 is brought into contact with the first substrate W1 by applying an external force to the second substrate W2, the bonding area between the two substrates spontaneously propagates from the center of each substrate toward the outer area. For example, even without applying an external force, the bonding between the two substrates can be gradually carried out from the initial contact point between the two substrates toward the outer area of ​​the two substrates by spontaneous bonding propagation. When the pressure at the interface between the two substrates decreases near the outer area of ​​the two substrates, water vapor condenses between the two substrates. Therefore, a void defect may be generated between the two substrates. In addition, due to the uneven temperature and / or pressure occurring near the outer area of ​​the two substrates, there may be a problem of degradation of the degree of bonding alignment between the two substrates.

[0056] However, according to example embodiments of the inventive concept, the bonding space 101 may be filled with a process gas having a controlled temperature and a controlled pressure by supplying the process gas to the bonding space 101 defined by the seal 130. During bonding between the first substrate W1 and the second substrate W2, since the temperature and pressure of the bonding space 101 are uniformly controlled by the process gas, generation of a gap between the two substrates caused by condensation of water vapor, etc., may be prevented. Deterioration in the degree of bonding alignment between the two substrates due to temperature non-uniformity and / or pressure non-uniformity may be prevented.

[0057] In addition, according to an example embodiment of the inventive concept, the pressure of the bonding space 101 can be adjusted by supplying a process gas to the bonding space 101 defined by the seal 130, thereby adjusting the bonding rate between the two substrates. For example, the bonding rate between the two substrates can be relatively reduced by adjusting the pressure of the bonding space 101 to the atmospheric pressure level to prevent rapid bonding between the two substrates in a vacuum environment or a pressure environment. In this case, since the bonding rate between the two substrates is reduced, the stress acting between the two substrates can be released, thereby improving the reliability of the bonding process.

[0058] Figure 3 is a cross-sectional view showing a portion of a substrate bonding apparatus 100a according to an exemplary embodiment of the inventive concept. Specifically, Figure 3 The diagram shows Figure 1 A cross-sectional view of a portion corresponding to the area indicated by “II”.

[0059] In addition to the substrate bonding apparatus 100a including a temperature sensor 181, a pressure sensor 183 and a controller 190, Figure 3 The substrate bonding apparatus 100a shown in FIG. Figure 1 and Figure 2 The substrate bonding apparatus 100 described herein is substantially the same or similar. For ease of description, the main description will be made with reference to Figure 1 and Figure 2 The differences in the substrate bonding apparatus 100 are described.

[0060] Reference Figure 3 , the substrate-bonding apparatus 100 a may include a temperature sensor 181 and a pressure sensor 183 .

[0061] The temperature sensor 181 may be configured to sense the temperature of the bonding space 101. For example, the temperature sensor 181 may be installed in the first bonding chuck 110 and / or the second bonding chuck 120. The temperature sensor 181 may be a non-contact temperature sensor such as an infrared sensor or a contact temperature sensor such as a resistance temperature detector.

[0062] In example embodiments, the substrate bonding apparatus 100a may include a plurality of temperature sensors 181. The plurality of temperature sensors 181 may be configured to respectively sense temperatures of different portions of the bonding space 101. For example, the plurality of temperature sensors 181 may be symmetrically arranged about a center of the first bonding chuck 110 and / or a center of the second bonding chuck 120. Here, the overall temperature uniformity of the bonding space 101 may be determined based on the temperatures respectively sensed by the plurality of temperature sensors 181.

[0063] The pressure sensor 183 may be configured to sense the pressure of the bonding space 101. For example, the pressure sensor 183 may be installed in the first bonding chuck 110 and / or the second bonding chuck 120. The pressure sensor 183 may include, for example, a strain gauge, a capacitive pressure sensor, a potentiometric pressure sensor, and the like.

[0064] In example embodiments, the substrate bonding apparatus 100a may include a plurality of pressure sensors 183. The plurality of pressure sensors 183 may be configured to respectively sense pressures of different portions of the bonding space 101. For example, the plurality of pressure sensors 183 may be symmetrically arranged about a center of the first bonding chuck 110 and / or a center of the second bonding chuck 120. Here, the overall pressure uniformity of the bonding space 101 may be determined based on the pressures respectively sensed by the plurality of pressure sensors 183.

[0065] The controller 190 may control the operation of each of the first bonding chuck 110 , the second bonding chuck 120 , the vacuum pump 140 , the process gas supply device 150 , the purge gas supply device 160 , and the exhaust device 170 .

[0066] The controller 190 may be configured to perform feedback temperature control on the temperature of the bonding space 101 based on the temperature signal TSS sensed by the temperature sensor 181 . The controller 190 may also perform feedback pressure control on the pressure of the bonding space 101 based on the pressure signal PSS sensed by the pressure sensor 183 .

[0067] In example embodiments, the controller 190 may receive a temperature signal TSS of the bonding space 101. The temperature signal TSS is sensed by the temperature sensor 181. The temperature sensor 181 may generate a feedback temperature control signal FTCS for control of the temperature controller 153 based on the sensed temperature signal TSS of the bonding space 101. The controller 190 may apply the generated feedback temperature control signal FTCS to the temperature controller 153. The temperature controller 153 may adjust the temperature of the process gas by operating according to the feedback temperature control signal FTCS.

[0068] The controller 190 may determine whether the temperature of the bonding space 101 falls within a preset target temperature range. The temperature of the bonding space 101 may be sensed by the temperature sensor 181. When it is determined that the temperature sensed by the temperature sensor 181 is outside the preset target temperature range, the controller 190 may change the temperature of the process gas. The process gas is supplied to the bonding space 101 by applying the feedback temperature control signal FTCS to the temperature controller 153.

[0069] For example, while performing bonding between the first substrate W1 and the second substrate W2 , the controller 190 may control the operation of the temperature controller 153 so that the temperature of the bonding space 101 is between 15° C. and 25° C. or around room temperature.

[0070] In example embodiments, the controller 190 may receive a pressure signal PSS of the bonding space 101 sensed by the pressure sensor 183, and may generate a feedback pressure control signal FPCS for controlling the pressure controller 155 based on the sensed pressure signal PSS of the bonding space 101. The controller 190 may apply the generated feedback pressure control signal FPCS to the pressure controller 155, and the pressure controller 155 may adjust the pressure of the process gas by operating according to the feedback pressure control signal FPCS.

[0071] The controller 190 may determine whether the pressure of the bonding space 101 sensed by the pressure sensor 183 falls within a preset target pressure range. When it is determined that the pressure sensed by the pressure sensor 183 is outside the preset target pressure range, the controller 190 may change the pressure of the process gas supplied to the bonding space 101 by applying a feedback pressure control signal FPCS to the pressure controller 155.

[0072] For example, when bonding between the first substrate W1 and the second substrate W2 is performed, the controller 190 may control the operation of the pressure controller 155 so that the pressure of the bonding space 101 is about 1 atm to about 1.5 atm.

[0073] The controller 190 may be implemented by hardware, firmware, software, or any combination thereof. For example, the controller 190 may include a computing device such as a workstation computer, a desktop computer, a laptop computer, a tablet computer, etc. The controller 190 may include a single-loop controller, a microprocessor, a central processing unit (CPU), a graphics processing unit (GPU), or a processor constructed by software, dedicated hardware, or firmware. For example, the controller 190 may be implemented by a general-purpose computer or dedicated hardware such as a digital signal processor (DSP), a field programmable gate array (FPGA), or an application-specific integrated circuit (ASIC).

[0074] In some example embodiments, the operation of the controller 190 may be implemented by instructions that can be read and executed by one or more processors, and the instructions are stored in a machine-readable medium. The machine-readable medium may include any mechanism for storing and / or transmitting information in a form readable by a machine (e.g., a computing device). For example, the machine-readable medium may include a read-only memory (ROM), a random access memory (RAM), a disk storage medium, an optical storage medium, a flash memory device, an electrical, optical, acoustic or other type of signal (e.g., a carrier wave, an infrared signal, a digital signal, etc.), and any other signal.

[0075] The controller 190 may be implemented by firmware, software, routines or instructions for performing a bonding process. For example, the controller 190 may be implemented by software to perform functions such as generating signals for performing a bonding process, receiving data for feedback, and controlling the bonding process by performing certain calculations.

[0076] Figure 4 is a plan view illustrating a second bonding chuck 120 of a substrate bonding apparatus according to example embodiments of the inventive concepts.

[0077] and Figure 1 and Figure 2 Refer to Figure 4 , the second bonding suction cup 120 may include a plurality of process gas supply holes 121. The plurality of process gas supply holes 121 may be arranged to be spaced apart from each other at substantially regular intervals along an outer circumference of the second bonding suction cup 120. A distance between a center of the second bonding suction cup 120 and each of the plurality of process gas supply holes 121 may be substantially constant. In other words, the plurality of process gas supply holes 121 may be symmetrically arranged about a center of the second bonding suction cup 120. In addition, an angle formed by two adjacent process gas supply holes 121 and a center of the second bonding suction cup 120 may be substantially constant when the center of the second bonding suction cup 120 is a vertex of the angle.

[0078] Figure 4 The substrate bonding apparatus may include a main supply line 1571 connected to a process gas source 151 of a process gas supply device 150 (see Figure 1 ). The substrate bonding apparatus may further include a plurality of branch supply lines 1573 branching from the main supply line 1571 (see Figure 1 ). Each of the plurality of branch supply lines 1573 may extend to each of the plurality of process gas supply holes 121 of the second bonding chuck 120. The process gas flowing along the main supply line 1571 is divided by the plurality of branch supply lines 1573. The process gas flowing along each of the plurality of branch supply lines 1573 may be supplied to the bonding space 101 through each of the plurality of process gas supply holes 121.

[0079] Here, the respective lengths of the plurality of branch supply lines 1573 may be substantially equal to each other. For example, the respective plurality of branch supply lines 1573 may branch from the main supply line 1571 at the center of the second bonding chuck 120 and may extend from the branch point toward the respective plurality of process gas supply holes 121. When the respective lengths of the plurality of branch supply lines 1573 are set to be equal to each other because the moving distances of the process gas to be injected into the bonding space 101 are equal to each other, uniform control of the pressure of the bonding space 101 may be improved.

[0080] Although Figure 4 Sixteen process gas supply holes 121 are shown to be arranged in the second bonding chuck 120, but the number of process gas supply holes 121 may be less than or greater than sixteen. Figure 4 It is shown that one purge gas supply hole 123 is arranged in the second bonding chuck 120, but the number of the purge gas supply holes 123 may be two or more. Figure 4 It is shown that one exhaust hole 125 is disposed in the second bonding chuck 120 , but the number of the exhaust hole 125 may be two or more.

[0081] Figure 5 is a cross-sectional view illustrating a substrate-bonding apparatus 100 b according to an example embodiment of the inventive concept. Figure 6 It is schematically shown Figure 5 A plan view of the seal 130a is shown in FIG.

[0082] In addition to the sealing member 130a of the substrate bonding apparatus 100b including the outflow hole 137, Figure 5 and Figure 6 The substrate bonding device 100b shown in FIG. Figure 1 and Figure 2 The substrate bonding apparatus 100 described herein or with reference to Figure 3 The described substrate bonding apparatus 100a is substantially the same or similar. For the convenience of description, the repeated description given above will be omitted or briefly made.

[0083] Reference Figure 5 and Figure 6 , the seal 130a may include a plurality of outflow holes 137. Each outflow hole 137 of the seal 130a may allow movement of a fluid between the bonding space 101 inside the seal 130a and the external space 103 outside the seal 130a.

[0084] In an exemplary embodiment, during bonding between the first substrate W1 and the second substrate W2, the controller 190 (see Figure 3 ) can control the pressure controller 155 (see Figure 3) is operated so that the pressure of the bonding space 101 is maintained to be greater than the pressure of the external space 103 outside the sealing member 130a. Although the outflow OF of the process gas through each outflow hole 137 may occur, since the pressure of the bonding space 101 is greater than the pressure of the external space 103, the inflow of external air through each outflow hole 137 can still be prevented.

[0085] The plurality of outflow holes 137 may be separated from one another at substantially regular intervals so that an outflow OF of the process gas through each outflow hole 137 is uniform in the bonding space 101 .

[0086] Figure 7 is a flowchart illustrating a substrate bonding method according to an example embodiment of the inventive concept. FIG. 8A to FIG. 8G 1 is a conceptual diagram showing a sequential process of a substrate bonding method according to an exemplary embodiment of the inventive concept. Figure 7 and FIG. 8A to FIG. 8G A substrate bonding method using a substrate bonding apparatus according to example embodiments of the inventive concept is described in detail.

[0087] Reference Figure 7 and Fig. 8A The second bonding chuck 120 is aligned with the first bonding chuck 110 so that the second bonding chuck 120 is arranged above the first bonding chuck 110 (S110). The second bonding chuck 120 is arranged on the second substrate W2. The first bonding chuck 110 is arranged on the first substrate W1.

[0088] For example, the first bonding chuck 110 may hold the first substrate W1 by vacuum suction so that the first substrate W1 is held to the first bonding chuck 110. The second bonding chuck 120 may hold the second substrate W2 by vacuum suction so that the second substrate W2 is held to the second bonding chuck 120. The first substrate W1 may be mounted on the first bonding chuck 110 so that the passive surface of the first substrate W1 contacts the first bonding chuck 110. The second substrate W2 may be mounted on the second bonding chuck 120 so that the passive surface of the second substrate W2 contacts the second bonding chuck 120. The second bonding surface of the second substrate W2 mounted on the second bonding chuck 120 may face the first bonding surface of the first substrate W1 mounted on the first bonding chuck 110.

[0089] The first bonding chuck 110 may be aligned in a vertical direction (e.g., Z direction) with the second bonding chuck 120. In order to align the first bonding chuck 110 with the second bonding chuck 120, at least one selected from the first bonding chuck 110 and the second bonding chuck 120 may be moved in a horizontal direction (e.g., X direction and / or Y direction) and may also be rotated about an axis corresponding to the vertical direction (e.g., Z direction).

[0090] Reference Figure 7 and Figure 8B The first substrate W1 and the second substrate W2 are positioned close to each other by moving the second bonding chuck 120 in a vertical direction (e.g., Z direction). The seal 130 surrounding both the edge of the first substrate W1 and the edge of the second substrate W2 is secured between the first bonding chuck 110 and the second bonding chuck 120, thereby forming a bonding space 101, which is between the first bonding chuck 110 and the second bonding chuck 120 and is sealed by the seal 130 (S120).

[0091] The second bonding chuck 120 may be lowered so that the first bonding surface of the first substrate W1 is separated from the second bonding surface of the second substrate W2 by as much as a preset suitable distance. For example, the distance between the first bonding surface of the first substrate W1 and the second bonding surface of the second substrate W2 may be about 10 μm to about 200 μm. Of course, in order to adjust the distance between the first substrate W1 and the second substrate W2, the first bonding chuck 110 may be raised, or the raising of the first bonding chuck 110 and the lowering of the second bonding chuck 120 may be performed simultaneously.

[0092] During the descent of the second bonding chuck 120, the sealing member 130 bonded to the second bonding chuck 120 may be descended together with the second bonding chuck 120. When the first substrate W1 is separated from the second substrate W2 by as much as a preset appropriate distance by the descent of the second bonding chuck 120, the vacuum pump 140 provides vacuum pressure in the vacuum groove 111 of the first bonding chuck 110, thereby bonding the lower portion of the sealing member 130 to the first bonding chuck 110. When the lower portion of the sealing member 130 is bonded to the first bonding chuck 110, a bonding space 101 surrounded by the sealing member 130 may be defined.

[0093] Reference Figure 7 and Figure 8C , a processing gas PG is supplied to the bonding space 101 (S130).

[0094] For example, the process gas supply device 150 may fill the bonding space 101 with helium (He) gas by supplying helium (He) gas through the process gas supply hole 121 of the second bonding chuck 120. Here, in order to make the bonding space 101 have a preset temperature and a preset pressure, as shown in FIG. Figure 3 As described, feedback temperature control may be performed based on the temperature of the bonding space 101 sensed by the temperature sensor 181 , and feedback pressure control may be performed based on the pressure of the bonding space 101 sensed by the pressure sensor 183 .

[0095] In example embodiments, in order to make the bonding space 101 have a preset temperature, the temperature of the process gas PG supplied to the bonding space 101 may be adjusted. Figure 3 As described, the temperature sensor 181 may sense the temperature of the bonding space 10. In addition, when the controller 190 determines that the temperature of the bonding space 101 sensed by the temperature sensor 181 is outside a preset target temperature range (e.g., a range of about 15° C. to about 25° C.), the controller 190 may control the operation of the temperature controller 153. Therefore, the controller 190 may adjust the temperature of the process gas PG supplied to the bonding space 101.

[0096] In addition, in example embodiments, in order to make the bonding space 101 have a preset pressure, the pressure of the process gas PG supplied to the bonding space 101 may be adjusted. Figure 3 As described, the pressure sensor 183 may sense the pressure of the bonding space 101. When the controller 190 determines that the pressure of the bonding space 101 sensed by the pressure sensor 183 is outside a preset target pressure range (e.g., a range of about 1 atm to about 1.5 atm), the controller 190 may control the operation of the pressure controller 155. Therefore, the controller 190 may adjust the pressure of the process gas PG supplied to the bonding space 101.

[0097] When the bonding space 101 has a preset temperature and a preset pressure by supplying the process gas PG to the bonding space 101, the first substrate W1 is bonded to the second substrate W2. The bonding between the first substrate W1 and the second substrate W2 may include, for example, an operation S140 of making the first substrate W1 and the second substrate W2 contact each other at one contact point and an operation S150 of propagating a bonding area between the first substrate W1 and the second substrate W2.

[0098] Reference Figure 7 and Fig.8D , the first substrate W1 and the second substrate W2 are brought into contact with each other at a contact point ( S140 ) to start bonding between the first substrate W1 and the second substrate W2 .

[0099] For example, the second bonding chuck 120 may push the center of the second substrate W2 toward the first substrate W1 by using the press bonding pin 128. The press bonding pin 128 is a member installed in the center portion of the second bonding chuck 120 to be reciprocally movable in a vertical direction, and for simplicity of illustration, the second substrate W2 is shown in FIG. Fig.8D Illustration of the press bonding pin 128 is omitted in other figures.

[0100] In operation S140, the second bonding suction cup 120 can be exempted from vacuum suction of the central area of ​​the second substrate W2, and the outer area of ​​the second substrate W2 can be maintained by vacuum suction. As the pressurized bonding pin 128 pressurizes the center of the second substrate W2, the center of the second substrate W2 can be brought into contact with the first substrate W1 at a contact point. The one contact point can be defined as a bonding starting point, and the bonding between the first substrate W1 and the second substrate W2 starts at the bonding starting point. For example, the bonding starting point can be a point where the center of the first bonding surface of the first substrate W1 intersects the center of the second bonding surface of the second substrate W2.

[0101] Reference Figure 7 and Fig. 8E , after the first substrate W1 and the second substrate W2 are brought into contact with each other at the bonding start point, a bonding region between the first substrate W1 and the second substrate W2 propagates from the bonding start point toward an outer region of each substrate (S150).

[0102] For example, when the second bonding suction cup 120 releases the vacuum suction of the outer area of ​​the second substrate W2, the propagation of the bonding area between the first substrate W1 and the second substrate W2 may be spontaneously performed even without applying other external forces. When the bonding between the outer area of ​​the first substrate W1 and the outer area of ​​the second substrate W2 is completed, a bonded substrate in which the first substrate W1 and the second substrate W2 are bonded to each other may be formed.

[0103] In example embodiments, the bonding surface of each of the first substrate W1 and the second substrate W2 may be a plasma-treated or wet-treated surface. For example, each of the first bonding surface of the first substrate W1 and the second bonding surface of the second substrate W2 may have an -OH functional group. Therefore, during bonding between the first substrate W1 and the second substrate W2, the -OH functional group of the first bonding surface of the first substrate W1 may be spontaneously bonded to the -OH functional group of the second bonding surface of the second substrate W2 via hydrogen bonding.

[0104] Reference Figure 7 and Fig.8F , when the bonding between the first substrate W1 and the second substrate W2 is completed, the process gas in the bonding space 101 is exhausted and the purge gas PU is supplied to the bonding space 101 ( S160 ).

[0105] The exhaust device 170 may exhaust the gas EG from the bonding space 101 through the exhaust hole 125 of the second bonding chuck 120. The purge gas supply device 160 may supply the purge gas PU to the bonding space 101 through the purge gas supply hole 123 of the second bonding chuck 120. The bonding space 101 may be defined by the sealing member 130. For example, the purge gas supply device 160 may bond the bonding space 101 using the purge gas PU (such as nitrogen (N2 ) gas) fills the bonding space 101. The bonding space 101 defined by the sealing member 130 may have an atmospheric pressure or a pressure close to the atmospheric pressure due to the filled purge gas PU.

[0106] Reference Figure 7 and Figure 8G , the vacuum suction of the sealing member 130 is released, and the first bonding chuck 110 is separated from the second bonding chuck 120 (S170).

[0107] The vacuum pump 140 may release the vacuum pressure formed in the vacuum groove 111 of the first bonding chuck 110 so that the seal 130 is detachable from the first bonding chuck 110. In addition, the second bonding chuck 120 may be elevated away from the first bonding chuck 110. After the second bonding chuck 120 is elevated, the bonded substrate obtained by bonding the first substrate W1 to the second substrate W2 may be unloaded.

[0108] Therefore, according to an embodiment of the inventive concept, a method of manufacturing a semiconductor device includes: providing a first substrate W1 disposed on a first bonding chuck 110 and a second substrate W2 disposed on a second bonding chuck 120, wherein the first substrate W1 and the second substrate W2 are located between the first bonding chuck 110 and the second bonding chuck 120; providing a seal 130 directly contacting the first bonding chuck 110 and the second bonding chuck 120 to seal a bonding space 101 between the first bonding chuck 110 and the second bonding chuck 120; supplying a process gas to the bonding space 101, the process gas having a small reactivity with the first substrate W1 and the second substrate W2 compared to an ambient gas outside the bonding space 101; and bonding the first substrate W1 to the second substrate W2. In some cases, a purge gas may be supplied to the bonding space 101 after the first substrate W1 is bonded to the second substrate W2 to exhaust the process gas from the bonding space 101.

[0109] Fig. 9 is a flowchart illustrating a method of manufacturing a semiconductor device according to example embodiments of the inventive concepts. Fig. 10A and Fig. 10B is a cross-sectional view showing a sequential process of bonding the first substrate W1 to the second substrate W2. Fig. 9 , Fig. 10A and Fig. 10B A method of fabricating a semiconductor device according to example embodiments of the inventive concepts is described.

[0110] Reference Fig. 9 and Fig. 10A , a first substrate W1 and a second substrate W2 as targets to be bonded are prepared ( S210 ).

[0111] Each of the first substrate W1 and the second substrate W2 may have an active surface on which a semiconductor structure is formed and an inactive surface opposite to the active surface. The active surface corresponds to the front side surface of each of the first substrate W1 and the second substrate W2. The inactive surface corresponds to the back side surface of each of the first substrate W1 and the second substrate W2. In example embodiments, the first substrate W1 may include a first semiconductor structure 50 formed on its active surface. In addition, the second substrate W2 may include a second semiconductor structure 60 formed on its active surface.

[0112] For example, each of the first substrate W1 and the second substrate W2 may include silicon. Alternatively, each of the first substrate W1 and the second substrate W2 may include a semiconductor element such as germanium or a compound semiconductor such as silicon carbide (SiC), gallium arsenide (GaAs), indium arsenide (InAs) or indium phosphide (InP).

[0113] For example, the first semiconductor structure 50 may include a first insulating layer 51 and a first conductive pattern 53. The second semiconductor structure 60 may include a second insulating layer 61 and a second conductive pattern 63. Each of the first insulating layer 51 and the second insulating layer 61 may include, for example, silicon oxide. Each of the first conductive pattern 53 and the second conductive pattern 63 may include, for example, copper (Cu). In addition, in example embodiments, each of the first semiconductor structure 50 and the second semiconductor structure 60 may include a semiconductor device layer. The semiconductor device layer constitutes a plurality of individual devices and a wiring structure layer for electrically connecting the plurality of individual devices to each other.

[0114] Each of the multiple individual devices may include a volatile memory and / or a non-volatile memory. For example, the volatile memory may include a dynamic random access memory (DRAM), a static RAM (SRAM), etc. The non-volatile memory may include, for example, a flash memory, a magnetic RAM (MRAM), a phase change RAM (PRAM), etc. Optionally, each of the first substrate W1 and the second substrate W2 may include a logic chip, a system on a chip (SOC), an application specific integrated circuit (ASIC), an image sensor chip, etc. The wiring structure layer may include a metal wiring layer and / or a via plug. For example, the wiring structure layer may have a multilayer structure in which two or more metal wiring layers and / or two or more via plugs are alternately stacked.

[0115] In example embodiments, the first substrate W1 may be a wafer including a logic chip, and the second substrate W2 may be a wafer including a memory chip. Alternatively, the first substrate W1 may be a wafer including a logic chip, and the second substrate W2 may be a wafer including an image sensor chip.

[0116] Reference Fig. 9, describing a process of bonding the first substrate W1 to the second substrate W2 ( S220 ). Fig. 10A 1 shows the first substrate W1 and the second substrate W2 before bonding, Fig. 10B The first substrate W1 and the second substrate W2 are shown after bonding.

[0117] The first bonding chuck 110 (see Figure 1 ) and a second bonding chuck 120 (see Figure 1 ) undergoes alignment bonding, thereby bonding the first substrate W1 to the second substrate W2. When the first substrate W1 is bonded to the second substrate W2, the surface 55 of the first semiconductor structure 50 contacts the surface 65 of the second semiconductor structure 60. In addition, the first conductive pattern 53 of the first semiconductor structure 50 contacts the second conductive pattern 63 of the second semiconductor structure 60. For example, the bonding between the first substrate W1 and the second substrate W2 can be performed by using the substrate bonding apparatus 100, 100a, or 100b described above, and can also be performed by referring to Figure 7 and FIG. 8A to FIG. 8G The substrate bonding method is described to perform bonding between the first substrate W1 and the second substrate W2.

[0118] Reference Fig. 9 When the bonding between the first substrate W1 and the second substrate W2 by using the substrate-bonding apparatus 100 is completed, the first substrate W1 and the second substrate W2 bonded to each other are subjected to annealing to increase the bonding strength between the first substrate W1 and the second substrate W2 ( S230 ).

[0119] Referring to the annealing process, the first conductive pattern 53 of the first semiconductor structure 50 can be more firmly bonded to the second conductive pattern 63 of the second semiconductor structure 60. In addition, the first insulating layer 51 of the first semiconductor structure 50 can be more firmly bonded to the second insulating layer 61 of the second semiconductor structure 60.

[0120] Reference Fig. 9 , the bonded substrate 70 obtained by bonding the first substrate W1 to the second substrate W2 is subjected to a subsequent semiconductor process ( S240 ).

[0121] The subsequent semiconductor process may include various processes. For example, the subsequent semiconductor process may include a deposition process, an etching process, an ion process, a cleaning process, etc. Here, the deposition process may include various material layer formation processes, such as chemical vapor deposition (CVD), sputtering, spin coating, etc. The ion process may include ion implantation, diffusion, annealing, etc. By performing these subsequent semiconductor processes, integrated circuits and wiring constituting semiconductor devices may be formed.

[0122] Subsequent semiconductor processes may include a packaging process for mounting the semiconductor device on a printed circuit board and forming a molding layer. In addition, subsequent semiconductor processes may include a testing process for testing the semiconductor device or semiconductor package. By performing these subsequent semiconductor processes, the semiconductor device or semiconductor package may be completed.

[0123] While the inventive concept has been particularly shown and described with reference to embodiments thereof, it will be understood that various changes in form and details may be made therein without departing from the spirit and scope of the following claims.

Claims

1. A substrate bonding device for bonding a first substrate to a second substrate, the substrate bonding device comprising: a first bonding chuck configured to hold the first substrate on a first surface of the first bonding chuck; a second bonding chuck configured to hold the second substrate on a second surface of the second bonding chuck, the second surface facing the first surface of the first bonding chuck; a seal disposed between the first bonding chuck and the second bonding chuck and adjacent to at least one edge of the first substrate and at least one edge of the second substrate and configured to close the bonding space; as well as a process gas supply device configured to supply process gas to the bonding space enclosed by the sealing member, The first portion of the seal is bonded to a first surface of the first bonding chuck, and the second portion of the seal is bonded to a second surface of the second bonding chuck, the second portion of the seal being opposite to the first portion of the seal.

2. The substrate bonding apparatus according to claim 1, wherein: A first portion of the seal is removably coupled to the first bonding chuck.

3. The substrate bonding apparatus according to claim 2, wherein: The first bonding chuck includes a vacuum groove, and The substrate bonding apparatus further includes a vacuum pump configured to provide vacuum pressure to the vacuum groove through vacuum suction to attach the first portion of the sealing member to the first bonding pad.

4. The substrate bonding apparatus according to claim 2, wherein: The seal includes a connecting portion extending between a first portion of the seal and a second portion of the seal, the connecting portion extending obliquely from the first portion of the seal toward the second portion of the seal.

5. The substrate bonding apparatus according to claim 1, wherein: The seal comprises a flexible material.

6. The substrate bonding device according to claim 1, further comprising: A temperature sensor is configured to sense a temperature of the bonding space.

7. The substrate bonding apparatus according to claim 6, wherein: The process gas supply device includes a temperature controller configured to adjust the temperature of the process gas, and The substrate bonding apparatus further includes a controller configured to control an operation of the temperature controller based on a temperature of the bonding space sensed by the temperature sensor.

8. The substrate bonding apparatus according to claim 1, further comprising: A pressure sensor is configured to sense pressure in the bonding space.

9. The substrate bonding apparatus according to claim 8, wherein: The process gas supply device includes a pressure controller configured to adjust the pressure of the process gas, and The substrate bonding apparatus further includes a controller configured to control an operation of the pressure controller based on the pressure of the bonding space sensed by the pressure sensor.

10. The substrate bonding apparatus according to claim 1, further comprising: a purge gas supply device configured to supply a purge gas to the bonding space; as well as The exhaust device is configured to exhaust gas from the bonding space through the exhaust hole arranged in the second bonding chuck.

11. The substrate bonding apparatus according to claim 1, wherein: The second bonding chuck includes a plurality of process gas supply holes arranged to be spaced apart from each other at regular intervals along an outer circumference of the second bonding chuck, The process gas supply device includes: a main supply line connected to a source of process gas; and a plurality of branch supply lines branching from the main supply line and extending to the plurality of process gas supply holes, respectively, and The plurality of branch supply lines have respective lengths that are equal.

12. The substrate bonding apparatus according to claim 1, wherein: The process gas supply device is configured to supply helium gas to the bonding space.

13. The substrate bonding apparatus according to claim 1, wherein: The seal includes a plurality of outflow holes that allow movement of fluid between a bonding space inside the seal and an exterior space outside the seal.

14. A substrate bonding apparatus for bonding a first substrate to a second substrate, The substrate bonding device comprises: a first bonding chuck configured to hold the first substrate on a first surface of the first bonding chuck; a second bonding chuck configured to hold the second substrate on a second surface of the second bonding chuck, the second surface facing the first surface of the first bonding chuck; a seal disposed between the first bonding chuck and the second bonding chuck and adjacent to at least one edge of the first substrate and at least one edge of the second substrate; a process gas supply device configured to supply a process gas to the bonding space surrounded by the seal, the process gas supply device comprising a temperature controller configured to adjust a temperature of the process gas and a pressure controller configured to adjust a pressure of the process gas; a temperature sensor configured to sense a temperature of the bonding space; a pressure sensor configured to sense pressure in the bonding space; as well as a controller configured to control a temperature controller and a pressure controller, The controller is configured to: generate a feedback temperature control signal for controlling the temperature controller based on the temperature of the bonding space sensed by the temperature sensor; and generate a feedback pressure control signal for controlling the pressure controller based on the pressure of the bonding space sensed by the pressure sensor. The first portion of the seal is bonded to a first surface of the first bonding chuck, and the second portion of the seal is bonded to a second surface of the second bonding chuck, the second portion of the seal being opposite to the first portion of the seal.

15. The substrate bonding apparatus according to claim 14, wherein: The controller is configured to control the pressure controller so that the pressure of the bonding space is 1 atm to 1.5 atm while bonding between the first substrate and the second substrate is performed.

16. The substrate bonding apparatus according to claim 14, wherein: The controller is configured to control the temperature controller so that the temperature of the bonding space is 15° C. to 25° C. while bonding between the first substrate and the second substrate is performed.

17. The substrate bonding apparatus according to claim 14, further comprising: a vacuum pump configured to apply vacuum pressure or release vacuum pressure in the vacuum groove of the first bonding chuck, The first portion of the seal is held to or separated from the first bonding chuck according to the pressure of the vacuum chamber.

18. The substrate bonding apparatus according to claim 14, wherein: The seal includes a plurality of outflow holes that allow movement of fluid between a bonding space inside the seal and an external space outside the seal, and The controller is configured to control the pressure controller so that the pressure of the bonding space is greater than the pressure of the external space while bonding between the first substrate and the second substrate is performed.

19. A substrate bonding apparatus for bonding a first substrate to a second substrate, The substrate bonding device comprises: a first bonding chuck configured to hold the first substrate on a first surface of the first bonding chuck; a second bonding chuck configured to hold the second substrate on a second surface of the second bonding chuck, the second surface facing the first surface of the first bonding chuck; a seal disposed between the first bonding chuck and the second bonding chuck and adjacent to at least one edge of the first substrate and at least one edge of the second substrate; as well as a process gas supply device configured to supply process gas to the bonding space surrounded by the seal, the process gas supply device comprising a temperature controller configured to adjust the temperature of the process gas and a pressure controller configured to adjust the pressure of the process gas, The seal comprises: a first part detachably coupled to a first bonding suction cup; and a second part coupled to a second bonding suction cup, wherein the first part of the seal is coupled to the first bonding suction cup by vacuum pressure applied to a vacuum groove of the first bonding suction cup, thereby defining a bonding space.

20. The substrate bonding apparatus according to claim 19, further comprising: a temperature sensor configured to sense a temperature of a bonding space defined by the seal; a pressure sensor configured to sense a pressure of a bonding space defined by the seal; as well as a controller configured to control a temperature controller and a pressure controller, The controller is constructed to: adjust the temperature of the processing gas supplied to the bonding space by controlling the temperature controller based on the temperature of the bonding space sensed by the temperature sensor; and adjust the pressure of the processing gas supplied to the bonding space by controlling the pressure sensor based on the pressure of the bonding space sensed by the pressure sensor.

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