Interconnect clip having a tilted contact surface and a raised bridge

Abstract

An interconnect clip includes a die contact portion including substantially planar upper and lower surfaces parallel to and opposite one another, a bridge portion adjoining the die contact portion and including substantially planar upper and lower surfaces parallel to and opposite one another, and a lead contact portion adjoining the bridge portion and having a lead contact surface or contact point. The lower surface of the die contact portion extends along a first plane. The lower surface of the bridge portion extends along a second plane entirely above the first plane for an entire length of the bridge portion. The lead contact surface or contact point is disposed below the first plane.

Description

[0001] CLAIM OF PRIORITY

[0002] This application is a continuation-in-part of and claims priority to U.S. Application 16 / 561,714, filed September 5, 2019, the entire contents of which are incorporated herein by reference. TECHNICAL FIELD

[0003] The present invention relates generally to semiconductor packages, and more particularly to interconnect clips and corresponding methods of manufacturing metal interconnect clips. BACKGROUND

[0004] Semiconductor packages are typically provided with a semiconductor die that includes discrete devices (e.g., transistors, diodes, etc.) as well as integrated circuits (e.g., controllers, specialized devices, amplifiers, etc.). In a typical semiconductor package, the semiconductor die is mounted on a carrier structure such as a die pad. An electrically insulating encapsulant material such as plastic or ceramic encapsulates the semiconductor die, thereby protecting the semiconductor die and associated electrical connections from moisture and dust particles. The semiconductor package typically includes a number of conductive leads that are exposed from the encapsulant material and provide externally accessible terminals for the device.

[0005] Metal clips represent one interconnect solution for electrically connecting terminals of a semiconductor die to package leads. Compared to wirebonds, metal clips can provide superior current carrying capability and thermal performance. Generally, designers attempt to make metal package clips as thick as possible to minimize electrical and / or thermal resistance. However, this design goal is constrained by package specific factors such as die size, minimum spacing between die and clip, encapsulant body size, etc. Designers are continually seeking ways to increase clip thickness and thereby improve performance while maintaining a high die to package size ratio. SUMMARY

[0006] An interconnect clip is disclosed. According to an embodiment, the interconnect clip includes a die contact portion including substantially planar upper and lower surfaces parallel and opposite to each other, a bridge portion adjoining the die contact portion and including substantially planar upper and lower surfaces parallel and opposite to each other, a lead contact portion adjoining the bridge portion and including first and second substantially planar lower surfaces forming an angular intersection with each other at a contact point, a first transition surface extending transversely from the lower surface of the bridge portion and to the lower surface of the die contact portion, and a second transition surface extending transversely from the lower surface of the bridge portion and to the first lower surface of the lead contact portion. The lower surface of the die contact portion extends along a first plane. The lower surface of the bridge portion extends from the first transition surface to the second transition surface along a second plane entirely above the first plane. The first lower surface of the lead contact portion is inclined relative to the first plane.

[0007] Individually or in combination, the thickness of the bridge portion is substantially uniform across a length of the bridge portion, the length of the bridge portion spanning from the first transition surface to the second transition surface.

[0008] Individually or in combination, the upper surface of the bridge portion is substantially coplanar with the upper surface of the die contact portion.

[0009] Individually or in combination, the second plane is substantially parallel to the first plane.

[0010] Individually or in combination, the lead contact portion further includes a first substantially planar upper surface opposite and parallel to the first lower surface of the lead contact portion, and a thickness of the lead contact portion is substantially equal to a thickness of the bridge portion, the thickness of the lead contact portion being a shortest distance between the first upper surface and the first lower surface of the lead contact portion.

[0011] According to another embodiment, the interconnect clip includes a die contact portion including opposite upper and lower surfaces, a bridge portion adjoining the die contact portion and including opposite upper and lower surfaces, and a lead contact portion adjoining the bridge portion and including a lead contact surface or a contact point. The lower surface of the die contact portion extends along a first plane. The lower surface of the bridge portion extends along a second plane entirely above the first plane across an entire length of the bridge portion.

[0012] Individually or in combination, the interconnect clip further includes a first transition surface extending transversely from the lower surface of the bridge portion and to the lower surface of the die contact portion, and a second transition surface extending transversely from the lower surface of the bridge portion and to the lead contact surface or the contact point of the lead contact portion, wherein the entire length of the bridge portion begins at the first transition surface and ends at the second transition surface.

[0013] Individually or in combination, the thickness of the bridge portion is substantially uniform across the entire length of the bridge portion, the thickness of the bridge portion being measured between the upper surface and the lower surface of the bridge portion.

[0014] Individually or in combination, the lead contact portion includes a lead contact surface, and the lead contact surface is a substantially planar lower surface of the interconnect clip that extends along a third plane entirely below the first plane.

[0015] Individually or in combination, the lead contact surface extends to an outer end surface of the interconnect clip, the outer end surface extending transverse to the lead contact surface.

[0016] Individually or in combination, the second transition surface is a continuous planar surface that is inclined relative to and extends from the lower surface of the bridge portion to the lead contact surface.

[0017] Individually or in combination, the lead contact surface or contact point is disposed below the first plane.

[0018] A semiconductor package assembly is disclosed. According to an embodiment, the semiconductor package assembly includes a die pad including a die attach surface, a conductive lead spaced apart from the die pad and including a substantially planar contact pad, a semiconductor die mounted on the die pad and including a first terminal disposed on an upper surface of the semiconductor die, the upper surface of the semiconductor die facing away from the die attach surface, and an interconnect clip electrically connecting the first terminal to the lead. The interconnect clip includes a die contact portion including substantially planar upper and lower surfaces parallel to and opposite each other, a bridge portion adjoining the die contact portion and including substantially planar upper and lower surfaces parallel to and opposite each other, and a lead contact portion adjoining the bridge portion and including first and second substantially planar lower surfaces forming an angular intersection with each other at a contact point. The lower surface of the die contact portion is flush against the upper surface of the semiconductor die. The contact point is mechanically coupled to the lead, and the first lower surface of the lead contact portion is inclined relative to the contact pad. The lower surface of the die contact portion extends along a first plane parallel to the upper surface of the semiconductor die. The lower surface of the bridge portion extends from a first location to a second location along a second plane entirely above the first plane. The first location is directly above the semiconductor die. The second location is directly above the contact pad.

[0019] Individually or in combination, the thickness of the bridge portion is substantially uniform across the length of the bridge portion, the length of the bridge portion spanning from the first location to the second location.

[0020] Individually or in combination, the upper surface of the bridge portion is substantially coplanar with the upper surface of the die contact portion.

[0021] Individually or in combination, the contact points are below the first plane.

[0022] Individually or in combination, the lateral edge side of the semiconductor die extends beyond the edge side of the die pad, and is disposed directly below the lower surface of the bridge portion.

[0023] Individually or in combination, the lead contact portion further comprises a first substantially planar upper surface opposite and parallel to the first lower surface of the lead contact portion, and wherein a thickness of the lead contact portion is substantially equal to a thickness of the bridge portion, the thickness of the lead contact portion being a distance between the first upper surface and the first lower surface of the lead contact portion.

[0024] Individually or in combination, the semiconductor package assembly further comprises an electrically insulating encapsulant body encapsulating the semiconductor die, the encapsulant body comprising an upper surface, a lower surface, and a side surface extending between the upper surface and the lower surface, the lead contact portion further comprising a second substantially planar upper surface forming an angled intersection with the first planar upper surface of the lead contact portion, and the second upper surface of the lead contact portion is substantially parallel to the side surface of the encapsulant body.

[0025] Individually or in combination, the upper surface of the die contact portion is exposed from the upper surface of the encapsulant body, and the lower surface of the die pad is exposed from the lower surface of the encapsulant body.

[0026] Individually or in combination, the second lower surface of the lead contact portion is parallel to and abutting the contact pad.

[0027] According to another embodiment, a semiconductor package assembly comprises: a die pad comprising a die attachment surface; an electrically conductive lead spaced apart from the die pad and comprising a substantially planar contact pad; a semiconductor die mounted on the die pad and comprising a first terminal disposed on an upper surface of the semiconductor die, the upper surface of the semiconductor die facing away from the die attachment surface; and an interconnect clip electrically connecting the first terminal to the lead, the interconnect clip comprising: a die contact portion comprising an upper surface and a lower surface; a bridge portion adjoining the die contact portion and comprising an upper surface and a lower surface; and a lead contact portion adjoining the bridge portion and comprising a lead contact surface or contact points. The lower surface of the die contact portion is abutting the upper surface of the semiconductor die, the lead contact surface or contact points are electrically connected to the contact pad, the lower surface of the die contact portion extends along a first plane parallel to the upper surface of the semiconductor die, the lower surface of the bridge portion extends from a first position to a second position along a second plane entirely above the first plane, the first position being directly above the semiconductor die, and the second position being directly above the contact pad.

[0028] Individually or in combination, the thickness of the bridge portion is substantially uniform across a length of the bridge portion, the length of the bridge portion spanning from the first location to the second location.

[0029] Individually or in combination, the upper surface of the bridge portion is substantially coplanar with the upper surface of the die contact portion.

[0030] Individually or in combination, the lead contact portion includes a lead contact surface, and wherein the lead contact surface abuts the contact pad.

[0031] Individually or in combination, the lead contact surface extends to an outer end surface of the interconnect clip, the outer end surface extending transverse to the lead contact surface.

[0032] Individually or in combination, the semiconductor package assembly further includes an electrically insulating encapsulant body encapsulating the semiconductor die, the encapsulant body including an upper surface, a lower surface, and a side surface extending between the upper surface and the lower surface, and the outer end surface of the interconnect clip is substantially parallel to the side surface of the encapsulant body.

[0033] Individually or in combination, the upper surface of the die contact portion is exposed from the upper surface of the encapsulant body, and the lower surface of the die pad is exposed from the lower surface of the encapsulant body.

[0034] A method of forming an interconnect clip is disclosed. According to an embodiment, the method includes providing a metal sheet; forming, from the metal sheet, a die contact portion, a bridge portion, and a first transition surface, the bridge portion and the first transition surface each including substantially planar upper and lower surfaces parallel to and opposite each other, the first transition surface extending transversely from the lower surface of the bridge portion to the lower surface of the die contact portion; forming, from the metal sheet, a lead contact portion and a second transition surface, the lead contact portion adjoining the bridge portion and including first and second substantially planar lower surfaces forming an angular intersection with each other at a contact point, the second transition surface extending transversely from the lower surface of the bridge portion to the first lower surface of the lead contact portion. The lower surface of the die contact portion is formed to extend along a first plane. The lower surface of the bridge portion is formed to extend from the first transition surface to the second transition surface along a second plane entirely above the first plane. The lead contact portion is formed such that the first lower surface of the lead contact portion is inclined relative to the first plane.

[0035] Individually or in combination, the metal sheet includes substantially planar upper and lower surfaces parallel to and opposite each other and an edge side extending between the upper and lower surfaces of the metal sheet, and wherein forming the die contact portion and the bridge portion includes stamping the lower surface of the metal sheet to form a stamped region thinner than an unstamped region and extending to the edge side, the unstamped region providing the upper and lower surfaces of the die contact portion, and the stamped region providing the upper and lower surfaces of the bridge portion.

[0036] Individually or in combination, forming the lead contact portion includes bending down a portion of the stamped region by applying a machine tool to the upper surface of the metal plate in the stamped region.

[0037] Individually or in combination, forming the lead contact portion further includes applying a beveled stamping tool to the upper surface of the metal plate in the stamped region, thereby deflecting the lead contact portion such that the contact point is below the first plane.

[0038] Individually or in combination, the method further includes forming a first bevel extending between the upper surface of the metal plate and the edge side, and forming the first bevel prior to bending down the portion of the stamped region.

[0039] Individually or in combination, the method further includes forming a second bevel extending between the lower surface of the metal plate and the edge side, and forming the second bevel prior to bending down the portion of the stamped region.

[0040] According to another embodiment, the method includes: providing a metal plate, forming a contact portion, a bridge portion, and a first transition surface from the metal plate, the die contact portion and the bridge portion each including opposing upper and lower surfaces, the first transition surface extending transversely from the lower surface of the bridge portion to the lower surface of the die contact portion; forming a lead contact portion from the metal plate, the lead contact portion abutting the bridge portion and including a lead contact surface or a contact point. The lower surface of the die contact portion is formed to extend along a first plane. The lower surface of the bridge portion is formed to extend the entire full length of the bridge portion along a second plane entirely above the first plane.

[0041] Individually or in combination, the metal plate includes a substantially planar upper surface and a lower surface parallel to and opposite one another and an edge side extending between the upper surface and the lower surface of the metal plate, and wherein forming the die contact portion and the bridge portion includes stamping the lower surface of the metal plate, thereby forming a stamped region thinner than an unstamped region and extending to the edge side, wherein the unstamped region provides the upper and lower surfaces of the die contact portion, and wherein the stamped region provides the upper and lower surfaces of the bridge portion.

[0042] Individually or in combination, forming the lead contact portion includes bending down a portion of the stamped region by applying a machine tool to the upper surface of the metal plate in the stamped region.

[0043] Individually or in combination, the lead contact portion is formed to include a lead contact surface, and the lead contact surface is a substantially planar lower surface of an interconnect clip, the substantially planar lower surface of the interconnect clip extending along a third plane entirely below the first plane.

[0044] Individually or in combination, the lead contact surface is formed by disposing the flat pad under the stamped region while the machine exerts a force against the upper surface of the metal plate.

[0045] Individually or in combination, the flat pad provides a counter force that holds the lower surface of the metal plate along a single plane while the stamped region is bent downward due to the force from the machine. BRIEF DESCRIPTION OF DRAWINGS

[0046] The elements in the figures correspond to those in the written description. The figures are not necessarily drawn to scale, the same reference numerals in different figures represent the same or similar elements. Features of the various illustrated embodiments can be combined, unless they are mutually exclusive. Embodiments are depicted in the drawings and described in detail in the written description.

[0047] Figure 1 An interconnect clip according to an embodiment is depicted.

[0048] Figure 2 A semiconductor package assembly according to an embodiment is depicted.

[0049] Figure 3 A method of forming an interconnect clip according to an embodiment is depicted.

[0050] Figure 4 A semiconductor package assembly according to an embodiment is depicted.

[0051] Figure 5 A method of forming an interconnect clip according to an embodiment is depicted.

[0052] Figure 6 A semiconductor package assembly according to an embodiment is depicted.

[0053] Figure 7 A method of forming an interconnect clip according to an embodiment is depicted.

[0054] Figure 8 A semiconductor package assembly according to an embodiment is depicted.

[0055] Figure 9 and Figure 10 A method of forming an interconnect clip according to an embodiment is depicted. DETAILED DESCRIPTION

[0056] Described herein are interconnect clips with advantageous geometric features. One advantageous feature is the lower surface profile of the interconnect clip. Specifically, the clip is designed such that when installed in a semiconductor package, the lower surface of the interconnect clip remains above the plane of the semiconductor die from a position directly above the die to a position directly above the package lead. This feature enables the semiconductor die to be closer to the edge side of the package, enabling a higher die to package size ratio. Another advantageous geometric feature of the interconnect clip is the thickness of the conductive path portion of the clip. Specifically, the interconnect clip includes a bridge portion and a die contact portion that carry current between the semiconductor die and the package lead, and in some embodiments, the thickness of each of the bridge portion and the die contact portion is at least sixty percent of the maximum thickness of the interconnect clip. As a result, the interconnect clip provides low resistance losses between the semiconductor die and the lead.

[0057] Described herein are advantageous methods for forming the interconnect clip. One advantage of the method is a two-step process, including a bending step and a half-cutting step. This technique allows the contact end of the interconnect clip to have the required vertical offset while at the same time maintaining a narrow contact interface.

[0058] Reference is made to Figure 1 FIG. 1 shows an interconnect clip 100 according to an embodiment. The interconnect clip 100 is formed of an electrically conductive material such as copper, aluminum, alloys thereof, and the like. The interconnect clip 100 includes three lateral regions, namely a die contact portion 102, a bridge portion 104, and a lead contact portion 106.

[0059] The die contact portion 102 is designed to engage and form an electrical connection with an electrically conductive terminal (e.g., a bond pad) of a semiconductor die. The die contact portion 102 includes an upper surface 108 and a lower surface 110 that are opposite each other. According to an embodiment, the upper surface 108 and the lower surface 110 of the die contact portion 102 are substantially planar surfaces that are parallel to each other.

[0060] The bridge portion 104 is contiguous with the die contact portion 102. The bridge portion 104 is designed to span the lateral gap between the semiconductor die and a package lead within a semiconductor package. The die contact portion 102 includes an upper surface 112 and a lower surface 114 that are opposite each other. According to an embodiment, the upper surface 112 and the lower surface 114 of the bridge portion 104 are substantially planar surfaces that are parallel to each other.

[0061] The lower surface 114 of the bridge portion 104 is vertically offset from the lower surface of the die contact portion 102. To this end, the interconnect clip 100 comprises a first transition surface 116 defining a lateral transition between the die contact portion 102 and the bridge portion 104. The first transition surface 116 extends transversely from the lower surface 114 of the bridge portion 104. This means that the first transition surface 116 extends in a different direction than the lower surface 114 of the bridge portion 104 and intersects the lower surface 114 of the bridge portion 104 at a defined inflection point. The first transition surface 116 extends to the lower surface of the lead contact portion 106. In the illustrated embodiment, the first transition surface 116 is oriented perpendicularly with respect to the lower surfaces 114, 110 of the bridge portion 104 and the die contact portion 102. Thus, the lower surface profile of the interconnect clip 100 has a stepped transition between the bridge portion 104 and the die contact portion 102. More generally, the first transition surface 116 can form an oblique angle with one or both of the lower surfaces 114, 110 of the bridge portion 104 and the die contact portion 102. Additionally or alternatively, the first transition surface 116 can be at least partially curved.

[0062] The lead contact portion 106 adjoins the bridge portion 104. The lead contact portion 106 is configured to enable electrical contact with a package lead. The lead contact portion 106 comprises a first lower surface 118 and a second lower surface 120 forming an angular intersection with each other at a contact point 122. This means that the first lower surface 118 and the second lower surface 120 of the lead contact portion 106 extend in different directions, and the contact point 122 is an inflection point between the two surfaces 118, 120. According to an embodiment, the first lower surface 118 and the second lower surface 120 are substantially planar surfaces perpendicular to each other. More generally, the first lower surface 118 and the second lower surface 120 can form an oblique angle with each other, and the contact point 122 can correspond to any angular transition between the two surfaces. The lead contact portion 106 additionally comprises a first upper surface 124 opposite the first lower surface 118 of the lead contact portion 106. According to an embodiment, the first upper surface 124 is a substantially planar surface parallel to the first lower surface of the lead contact portion 106.

[0063] The interconnect clip 100 includes a second transition surface 126 that defines a lateral transition between the bridge portion 104 and the lead contact portion 106. The second transition surface 126 extends transversely from the lower surface 114 of the bridge portion 104. This means that the second transition surface 126 extends in a different direction than the lower surface 114 of the bridge portion 104 and intersects the lower surface 114 of the bridge portion 104 at a defined inflection point. In the illustrated embodiment, the second transition surface 126 is oriented perpendicularly relative to the lower surface 114 of the bridge portion 104 and forms an oblique angle with the first lower surface 118 of the lead contact portion 106. Alternatively, the second transition surface 126 and the first lower surface 118 of the lead contact portion 106 can be portions of a continuous planar surface that is oblique relative to the lower surface 114 of the bridge portion 104 and extends from the lower surface 114 of the bridge portion 104 to the contact point 122. Additionally or alternatively, the second transition surface 126 can be at least partially curved.

[0064] The vertical offset of the lower surface 114 of the bridge portion 104 relative to the lower surface 110 of the die contact portion 102 can be defined relative to a plane along which these two surfaces extend. The lowest planar surface of the die contact portion 102 defines a first plane 128. The flattest planar surface of the bridge portion 104 is defined by a second plane 130 that is above the first plane 128. In the illustrated embodiment, the lower surface 110 of the die contact portion 102 extends only along the first plane 128, while the lower surface 114 of the bridge portion 104 extends only along the second plane 130. In other embodiments, the lower surface 110 of the die contact portion 102 and / or the lower surface 114 of the bridge portion 104 can deviate upward from these planes. For example, the bridge portion 104 can include a notch that is deflected upward from the second plane 130. Further, in the illustrated embodiment, the second plane 130 is substantially parallel to the first plane 128. In other embodiments, the second plane 130 can be oblique relative to the first plane 128, provided that the lower surface 114 of the bridge portion 104 does not transversely intersect the first plane 128.

[0065] According to an embodiment, the lower surface 114 of the bridge portion 104 extends from the first transition surface 116 to the second transition surface 126 on or above the second plane 130 that is entirely above the first plane 128. This means that the entire lower surface 114 of the bridge portion 104 remains above the lowermost surface of the die contact portion 102.

[0066] According to an embodiment, the bridge portion 104 maintains a substantially uniform thickness over the entire length of the bridge portion 104, at least in one cross-sectional plane. The length of the bridge portion 104 spans from the first transition surface 116 to the second transition surface 126. The thickness of the bridge portion 104 is the shortest distance between the upper surface 112 and the lower surface 114 of the bridge portion 104 in the cross-sectional plane of interest. In the illustrated embodiment, the bridge portion 104 maintains a uniform thickness over the entire length of the bridge portion 104.Figure 1 The bridge portion 104 has a uniform thickness across the entire length of the bridge portion 104 in the illustrated cross-sectional plane. In another cross-sectional plane parallel to the illustrated cross-sectional plane, recesses (not shown) can be formed in the upper surface 112 of the bridge portion 104. These recesses can serve to enhance adhesion to the encapsulant material. These recesses do not necessarily span the entire length of the bridge portion 104 and can be provided on either side of the central cross-sectional span of the bridge portion 104 having a uniform thickness. Figure 1 The bridge portion 104 has a uniform thickness across the entire length of the bridge portion 104 in the illustrated cross-sectional plane. In another cross-sectional plane parallel to the illustrated cross-sectional plane, recesses (not shown) can be formed in the upper surface 112 of the bridge portion 104. These recesses can serve to enhance adhesion to the encapsulant material. These recesses do not necessarily span the entire length of the bridge portion 104 and can be provided on either side of the central cross-sectional span of the bridge portion 104 having a uniform thickness.

[0067] According to an embodiment, the first lower surface 118 of the lead contact portion 106 is inclined with respect to the first plane 128. This means that the first lower surface 118 of the lead contact portion 106 is oriented at an inclined angle, i.e., at a non-perpendicular and non-parallel angle with respect to the first plane 128. Similarly, the second lower surface 120 of the lead contact portion 106 can be inclined with respect to the first plane 128. For example, the first and second lower surfaces 118, 120 of the lead contact portion 106 can each be oriented at an angle between 150 degrees and 130 degrees with respect to the first plane 128.

[0068] In the illustrated embodiment, the contact point 122 is below the first plane 128. As a result, the interconnect clip 100 has a so-called sunken configuration, in which the interconnect clip 100 is configured to achieve electrical contact at a position vertically below the lower surface 110 of the die contact portion 102.

[0069] According to an embodiment, the thickness of the die contact portion 102 is between 200 pm and 600 pm. In a first specific example, the thickness of the die contact portion 102 is approximately 250 pm. In a second specific example, the thickness of the die contact portion 102 is approximately 380 pm. In a third specific example, the thickness of the die contact portion 102 is approximately 510 pm. The thickness of the die contact portion 102 is the shortest distance between the upper surface 108 and the lower surface 110 of the die contact portion 102.

[0070] According to an embodiment, the vertical offset of the lower surface 114 of the bridge portion 104 relative to the lower surface 110 of the die contact portion 102 is between 5 pm and 200 pm, and more particularly can be between 20 pm and 150 pm. In general, the selection of the vertical offset can depend on the characteristics of the encapsulant material of the package, such as the size and granularity of the particles. In one specific example, the vertical offset is approximately 100 pm. The vertical offset of the lower surface 114 of the bridge portion 104 relative to the lower surface 110 of the die contact portion 102 is the shortest distance between the lower surface 114 of the bridge portion 104 and the first plane 128. The vertical offset of the lower surface 114 of the bridge portion 104 relative to the lower surface 110 of the die contact portion 102 can be independent of the thickness of the die contact portion 102 and / or the bridge portion 104. Thus, using a vertical offset of 100 pm, the thickness of the bridge portion 104 can be approximately 150 pm in the first specific example described above; approximately 280 pm in the second specific example described above; and approximately 410 pm in the third specific example described above.

[0071] According to an embodiment, the ratio between the thickness of the bridge portion 104 and the thickness of the die contact portion 102 is between 0.5 and 0.9. In the first specific example described above, the ratio is approximately 0.6. In the second specific example described above, the ratio is approximately 0.74. In the third specific example described above, the ratio is approximately 0.8.

[0072] According to an embodiment, the first thickness of the lead contact portion 106 is substantially equal to the thickness of the bridge portion 104. Thus, in the first specific example described above, the thickness of the lead contact portion 106 can be approximately 150 pm; in the second specific example described above, the thickness of the lead contact portion 106 can be approximately 280 pm; and in the third specific example described above, the thickness of the lead contact portion 106 can be approximately 410 pm. The first thickness of the lead contact portion 106 is the shortest distance between the first upper surface 124 and the first lower surface 118 of the lead contact portion 106.

[0073] The above-discussed geometric parameters of the interconnect clip 100 represent specific embodiments. More generally, the dimensions, shapes, and ratios of the above-described features of the interconnect clip 100 can be adjusted as appropriate to meet various different application requirements. Examples of these application requirements include semiconductor die size, semiconductor load current, and package size, to name a few.

[0074] Reference Figure 2FIG. 1 shows a semiconductor package assembly 100 according to an embodiment. Semiconductor package assembly 100 includes a die pad 102 and a lead 104. Die pad 102 and lead 104 are electrically conductive structures. Exemplary materials for die pad 102 and lead 104 include metals such as copper, aluminum, nickel, iron, zinc, and the like, and alloys thereof. Die pad 102 and lead 104 can be part of a common leadframe structure. Die pad 102 includes a die attach surface 106, which is a substantially planar surface configured for mounting a semiconductor die thereon. Lead 104 is spaced apart from die pad 102 and includes a contact pad 108. Contact pad 108 is a substantially planar surface configured to accommodate electrical connections with interconnect features (e.g., bond wires, clips, tape, etc.).

[0075] Semiconductor package assembly 100 includes a semiconductor die 110. In general, semiconductor die 110 can have a variety of device configurations. These configurations include discrete device configurations, such as MOSFETs (metal oxide semiconductor field effect transistors), IGBTs (insulated gate bipolar transistors), JFETs (junction field effect transistors), diodes, and the like. These configurations can additionally include integrated circuit configurations, such as amplifiers, controllers, processors, and the like. In general, semiconductor die 110 can include any of a variety of semiconductor materials. These semiconductor materials include Group IV semiconductors (e.g., silicon, silicon germanium, silicon carbide, and the like), as well as Group III-V semiconductors (e.g., gallium nitride, gallium arsenide, and the like). Semiconductor die 110 can be configured as a vertical device, configured to control current flow between opposing upper and lower surfaces, or as a lateral device, configured to control current flow parallel to a major upper surface.

[0076] Semiconductor die 110 is mounted on die attach surface 106. An adhesive, such as solder, sinter, conductive paste, tape, and the like, can be disposed between a lower surface of semiconductor die 110 and die attach surface 106 to effectuate the connection.

[0077] According to an embodiment, the semiconductor die 210 includes a first terminal 212 disposed on an upper surface of the semiconductor die 210 facing away from the die attach surface 206. The first terminal 212 can be a conductive bond pad. The semiconductor die 210 can additionally include a second terminal 214 disposed on a lower surface of the semiconductor die 210 facing toward the die attach surface 206. The second terminal 214 can be a conductive bond pad. According to an embodiment, the first and second terminals 212, 214 are load terminals of the semiconductor die 210. For example, in the case of a diode, the first and second terminals 212, 214 can be an anode terminal and a cathode terminal, or in the case of a MOSFET, the first and second terminals 212, 214 can be source / drain terminals, or in the case of an IGBT, the first and second terminals 212, 214 can be collector / emitter terminals. The second terminal 214 can be electrically connected to the die pad 202, for example, via solder or sinter.

[0078] The semiconductor package assembly 200 includes an encapsulant body 216. The encapsulant body 216 includes an upper surface 218, a lower surface 220, and a side surface 222 extending between the upper surface 218 and the lower surface 220 of the encapsulant body 216. The encapsulant body 216 forms an insulating and protective structure around the semiconductor die 210, the die pad 202, the leads 204, and the interconnect clip 100. The encapsulant body 216 includes an electrically insulating material. Examples of such materials include ceramic, epoxy material, thermoset plastic, to name a few. The encapsulant body 216 can be formed using molding techniques such as injection molding, compression molding, transfer molding, etc.

[0079] According to an embodiment, the upper side of the interconnect clip 100 is exposed from the encapsulant body 216. More specifically, the upper surfaces 108, 112 of the die contact portion 102 and the bridge portion 104 can be exposed from and coplanar with the upper surface 218 of the encapsulant body 216. This configuration allows the interconnect clip 100 to function both as an interconnect feature and a heat dissipation feature. An external heat sink (not shown) can be mounted on top of the exposed portion of the interconnect clip 100. In this configuration, the die contact portion 102 functions as a heat sink.

[0080] In the semiconductor package assembly 200, the interconnect clip 100 provides electrical connections between the first terminals 212 of the semiconductor die 210 and the leads 204. To this end, the lower surface 110 of the die contact portion 102 abuts the upper surface of the semiconductor die 210 and is electrically connected to the first terminals 212. The contact points 122 of the lead contact portion are in electrical contact with the contact pads 208 of the leads 204. Each of these electrical connections can be realized through direct face-to-face contact between the connected elements or through an electrically conductive intermediary. According to an embodiment, the contact points 122 are mechanically coupled to the flat contact pads 208. This means that a stable bond is formed between the two surfaces, for example through a malleable adhesive such as solder, sinter, etc.

[0081] According to an embodiment, the interconnect clip 100 is mounted such that the first and second lower surfaces 118, 120 of the lead contact portion 106 are inclined with respect to the contact pads 208. This means that each of the first and second lower surfaces 118, 120 forms an obtuse angle with the flat contact pads 208. In one specific example, the first lower surface 118 forms an angle of between about 30 degrees and 45 degrees with the contact pads 208, and the second lower surface 120 forms an angle of between about 30 degrees and 45 degrees with the contact pads 208.

[0082] According to an embodiment, the interconnect clip 100 is mounted such that the lower surface 114 of the bridge portion 104 extends along a single plane above the upper surface of the semiconductor die 210. Furthermore, the lower surface 114 of the bridge portion 104 remains on this single plane from directly above the semiconductor die 210 to directly above the leads 204. This is made possible by the lower surface profile of the interconnect clip 100, wherein the lower surface 114 of the bridge portion 104 extends along a second plane 130, and the lower surface 110 of the die contact portion 102 extends along a first plane 128, as described above. In particular, the intersection between the first transition surface 116 and the lower surface 114 of the bridge portion 104 occurs at a first location that is directly above the die pads 202, and the intersection between the second transition surface 126 and the lower surface 114 of the bridge portion 104 occurs at a second location that is directly above the contact pads 208.

[0083] According to an embodiment, the contact interfaces of the interconnect clip 100 are vertically offset from each other. In particular, the die contact portion 102 contacts the upper surface of the semiconductor die 210 at a location that is vertically above the location at which the lead contact portion 106 contacts the contact pads 208. This vertical displacement can be in the range of 150 pm and 200 pm. For example, in a specific example, the vertical displacement is about 175 pm. More generally, this vertical displacement can be suitably adjusted to satisfy various design considerations, for example the thickness of the semiconductor die, the thickness of the solder / sinter, etc.

[0084] Due to the lower surface profile of the interconnect clip 100 within the assembly, the semiconductor die 210 can advantageously be located closer to the side surface 222 of the encapsulant body 216, which in turn increases the die to package size ratio. As is generally understood in the art, design rules account for normal variations in feature sizes, such as clip length, by imposing a minimum separation distance between elements. One such design rule requires a lateral separation between the edge of the semiconductor die and the side surface of the interconnect clip that reaches or passes through the plane of the semiconductor die. Known clip configurations include side surfaces that reach the plane of the semiconductor die at locations between the die pads and the leads. As a result, these side surfaces dictate the allowable boundary of the semiconductor die. In contrast, in the presently disclosed configuration, the nearest surface that intersects the plane of the semiconductor die (i.e., the second transition surface 126 or the first lower surface 118) is disposed directly above the leads. As a result, the edge of the semiconductor die 210 can encroach closer to the edge of the package.

[0085] The above concepts are illustrated according to embodiments in which the lateral edge side of the semiconductor die 210 extends past the edge side of the die pads 202 and is disposed directly below the lower surface 114 of the bridge portion 104. In the above known clip configurations in which the side surface of the clip reaches the plane of the semiconductor die at locations between the die pads and the leads, this arrangement would be impossible due to the minimum separation requirement.

[0086] At the same time, the thickness of the interconnect clip 100 advantageously remains high across the entire conductive path of the clip. As previously mentioned, the bridge portion 104 and the lead contact portion 106 can have the same thickness, which can be a substantial portion of the thickness of the die contact portion 102, e.g., at least 60% of the thickness of the die contact portion 102. As a result, the interconnect clip 100 lacks any bottleneck points that would disadvantageously increase resistance and thus power consumption. Moreover, these ratios are achieved with a relatively thick die contact portion 102, e.g., at least 175 pm thick, which allows for efficient heat dissipation via a top side mounted heat sink.

[0087] Reference Figure 3 A method of forming the interconnect clip 100 according to embodiments is described.

[0088] In a first process step 300 of the method, a planar metal sheet 302 is provided. The planar metal sheet 302 can comprise a conductive metal such as copper, aluminum, and the like, and alloys thereof. The planar metal sheet 302 comprises a substantially planar upper surface 304, a substantially planar lower surface 306, and an edge surface 308 extending between the upper and lower surfaces 304, 306 of the planar metal sheet 302. The edge surface 308 of the planar metal sheet 302 can be substantially perpendicular to the upper and lower surfaces 304, 306 of the planar metal sheet 302.

[0089] In a second process step 310 of the method, the lower surface 306 of the flat metal plate 302 is stamped, for example by means of a stamping technique. This forms a stamped region 312 of the flat metal plate 302, which is thinner than an un-stamped region 314. The difference in thickness between the stamped region 312 and the un-stamped region 314 can correspond to the vertical offset of the bridge portion 104, for example between 5 and 15 pm in embodiments. As previously discussed, stamping the lower surface 306 of the flat metal plate 302 forms the lower surface profile of the die contact portion 102, the bridge portion 104 and the first transition surface 116. The upper and lower surfaces 304, 306 of the flat metal plate 302 in the un-stamped region 314 correspond to the upper and lower surfaces 108, 110 of the die contact portion 102. The upper and lower surfaces 304, 306 of the flat metal plate 302 in the stamped region 312 correspond to the upper surface 112 and the lower surface 114 of the bridge portion 104.

[0090] In a third process step 316 of the method, the flat metal plate 302 is bent downwards. This can be done by applying a sharp-edged tool to the upper surface 304 of the flat metal plate 302 in the stamped region 312. This causes the flat metal plate 302 to bend such that the lower surface 306 of the metal plate 302 is inclined. The inclined surface corresponds to the first lower surface 118 of the lead contact portion 106. The edge surface 308, which is also inclined after the bending step, corresponds to the second lower surface 120 of the lead contact portion 106. The bending can be performed such that these surfaces extend along the previously discussed inclination angle, for example between 130 degrees and 150 degrees relative to the first plane 128 in embodiments.

[0091] In a fourth process step 318 of the method, the flat metal plate 302 is displaced vertically downwards at the end portions of the stamped region 312. This can be done by applying a sharp-edged tool to the upper surface 304 of the metal plate in the stamped region 312. The sharp-edged tool can be, for example, a tool for cutting the metal plate. This technique is performed to offset the lead contact portion 106 until the contact point 122 reaches the desired vertical displacement below the first plane 128, for example between 150 pm and 200 pm in the above example.

[0092] Advantageously, reference is made to Figure 3The described process sequence enables the formation of an interconnect clip 100 having a desired vertical displacement (e.g., between 150 μιη and 200 μιη) of the contact point 122 while at the same time forming a contact interface of the interconnect clip 100 having a narrow profile. Although similar vertical displacement is technically possible by performing only a bending step similar to the third process step 316 or by performing only a half-cut / displacement step similar to the fourth process step 318, either of these approaches has drawbacks. Specifically, performing only a bending step causes the edge of the flat metal plate to rotate closer to parallel to the lower surface of the metal plate. Alternatively, the half-cut / displacement step requires a significant overlap between the edge of the flat metal plate and the machine tool. In either case, the result is a relatively wide contact interface of the interconnect clip, e.g., at least as wide as the thickness of the metal plate. By performing both steps together, the necessary vertical displacement can be achieved while at the same time tilting the contact surface of the first lower surface including the lead contact portion 106. The final narrow profile of the contact interface of the interconnect clip 100 can generally be desirable because it enables smaller size contact pads, which in turn can enable package size reduction.

[0093] Referring to Figure 4 , a semiconductor package assembly 200 according to another embodiment is shown. Except that the interconnect clip 100 has a different upper surface profile, Figure 4 the embodiment of Figure 2 is identical in all respects to the embodiment described with reference to . More particularly, the lead contact portion 106 further includes a second substantially planar upper surface 132 forming an angled intersection with the first upper surface 124 of the lead contact portion 106. The second upper surface 132 of the lead contact portion 106 is tilted toward the plane of the second lower surface 120 of the lead contact portion 106. According to one embodiment, the second upper surface 132 of the lead contact portion 106 is parallel or close to parallel to the side surface of the package body 216, i.e., within about + / - 10 degrees relative to parallel to the side surface 222 of the package body 216. One advantage of this configuration is that the package size is reduced by reducing the lateral intrusion of the interconnect clip 100 toward the side surface 222 of the package body 216.

[0094] Figure 5 Referring to Figure 4 , a method of forming an interconnect clip 100 in an assembly according to an embodiment is shown. The method includes forming a flat metal plate according to the method described with reference to Figure 3The same techniques described are used to perform the first, second, third, and fourth process steps 300, 310, 316, and 318. Additionally, the method includes performing a fifth process step 320 after the second process step 310 and before the third process step 316. The fifth process step 320 includes forming a first bevel 322 in the stamping region 312. The first bevel 322 can be formed, for example, by a stamping process. The first bevel 322 is formed to extend between the upper surface 304 and the edge surface 308 of the metal plate 302. The first bevel 322 corresponds to the second upper surface 132 of the lead contact portion 106, as previously described. The beveling process can be controlled such that after bending and offsetting are completed, the first bevel 322 is appropriately angled, for example, perpendicular to the lower surface 110 of the die contact portion 102.

[0095] refer to Figure 6 This illustrates a semiconductor package assembly 200 according to another embodiment. Except that the interconnect jig 100 has a different lower surface profile, Figure 6 This embodiment is identical in all respects to the reference. Figure 4 The described embodiment is the same. More specifically, the lead contact portion 106 is modified such that, when the interconnect jig 100 is mounted, the second lower surface 120 of the lead contact portion 106 is substantially parallel to and abuts the contact pad 208. Thus, unlike the previously described embodiment, only the first lower surface 118 of the lead contact portion 106 is inclined relative to the first plane 128 and relative to the contact pad 208. One advantage of this configuration is that it enhances the surface area contact between the interconnect jig 100 and the lead 204. Although a narrow contact interface is generally desirable for the reasons explained above, narrowing the contact interface disadvantageously increases the contact resistance. Figure 6 The design shown provides a large cross-sectional contact area for current. However, the length of the second lower surface 120 of the lead contact portion 106 can be adjusted to be small enough (e.g., less than 50% of the thickness of the lead contact portion 106) so as not to affect the size of the lead 204 due to the requirement for a larger contact pad.

[0096] refer to Figure 7 The formation according to the embodiment is shown. Figure 6 A method for interconnecting fixtures 100 in components. The method includes, according to reference... Figure 3The same techniques described are performed for the first, second, third, and fourth process steps 300, 310, 316, and 318. In addition, the method includes performing a sixth process step 324 after the second process step 310 and before the third process step 316. The sixth process step 324 includes forming a first bevel 322 in the lead contact portion 106 in the manner previously described. In addition, the sixth process step 324 includes forming a second bevel 326 in the lead contact portion 106. The second bevel 326 can be formed, for example, by a stamping process. The first bevel 322 is formed to extend between the lower surface 306 of the metal plate 302 and the edge surface 308 of the metal plate 302. The second bevel 236 is related to the second lower surface 120 of the lead contact portion 106 as previously described. The beveling process can be controlled so that the surface is appropriately angled, e.g., parallel to the lower surface 110 of the die contact portion 102, after the bending and offsetting is complete.

[0097] Referring to Figure 8 FIG. 2 shows a semiconductor package assembly 200 according to another embodiment. Figure 8 The semiconductor package assembly 200 of FIG. 2 is the same as the previously described embodiments, except that the lead contact portion 106 of the interconnect clip 100 has a different geometry, which is described in further detail below.

[0098] The lead contact portion 106 of the interconnect clip 100 includes a lead contact surface 134. The lead contact surface 134 can be a substantially flat surface that is in electrical contact with the contact pad 208 of the lead 204 when the interconnect clip 100 is installed. The lead contact surface 134 can be flush with the contact pad 208, with an intervening material, such as solder or other conductive adhesive, disposed therebetween. In the depicted embodiment, the lead contact surface 134 extends along a third plane 136 that is entirely below the first plane 128 and corresponds to the plane of the interface with the contact pad 208. In another embodiment, the third plane 136 can be parallel to the first plane. More generally, the lead contact surface 134 can extend along any plane that is capable of making electrical contact with a flat contact surface in a semiconductor package.

[0099] In contrast to the embodiment of FIG. 1, in which only the contact point 122 strongly contacts the contact pad 208 of the lead 204, Figure 4 In contrast to the embodiment of FIG. 1, in which only the contact point 122 strongly contacts the contact pad 208 of the lead 204, Figure 8 The interconnect clip 100 of FIG. 2 has a larger surface area for electrical contact between the interconnect clip 100 and the contact pad 208, which results in a reduced contact resistance. The lead contact surface 134 can be mechanically coupled and electrically connected to the contact pad 208 using any of the previously described techniques, e.g., using a malleable adhesive such as solder, sinter, etc.

[0100] According to an embodiment, the lead contact surface 134 extends fully to reach the outer end surface 138 of the interconnect clamp 100. The outer end surface 138 of the interconnect clamp 100 is a surface that extends substantially transversely to the flat contact pad 208 in the mounting position. This is consistent with the interconnect clamp 100 including a plurality of angled surfaces at its outer end. Figure 6 The implementation methods are different. Figure 8 The interconnect jig 100 has only one outer end surface 138 extending between the upper and lower surfaces of the lead contact portion 106. The outer end surface 138 of the interconnect jig 100 may be substantially perpendicular to the lead contact surface. Alternatively, the outer end surface 138 of the interconnect jig 100 may be substantially parallel to the side surface 222 of the encapsulation body 216. This allows for minimal spacing between the outer end surface 138 of the interconnect jig 100 and the side surface 222 of the encapsulation body 216, thereby providing enhanced space efficiency in the semiconductor package assembly 200.

[0101] exist Figure 8 In one embodiment, the interconnect fixture 100 includes a second transition surface 126 extending from the lower surface 114 of the bridge portion 104 to the lead contact surface 134. The second transition surface 126 is inclined relative to the lower surface 114 of the bridge portion 104, meaning it forms a non-perpendicular angle (e.g., an acute angle) with the lower surface 114 of the bridge portion 104. In a previous embodiment, the second transition surface 126 and the first lower surface 118 of the lead contact portion 106 were separate surfaces at an angle to each other. Conversely, Figure 8 The interconnect fixture 100 includes only a single continuous surface extending along a single plane (referred to as the second transition surface 126 for ease of description). In another embodiment (not shown), the interconnect fixture 100 may include the second transition surface 126 perpendicular to the lower surface 114 of the bridge portion 104 and a separate surface inclined relative to the lower surface 114 of the bridge portion 104, which extends to the lead contact surface 134.

[0102] refer to Figure 9 and Figure 10 The description depicts the process according to an embodiment. Figure 8 A method for forming an interconnecting fixture 100 from component 200. According to this technique, first and second process steps 300, 310 are performed on a metal plate. These first and second process steps 300, 310 can be based on reference... Figure 3 The same technique described is used to perform the process, thereby forming the stamped area 312 and the non-stamped area 314 from the flat metal plate 302.

[0103] Figure 9 and Figure 10The method described includes performing a third process step 328 after forming the stamped region 312 and the unstamped region 314. The third process step 328 includes bending the outer side portion of the stamped region 312 by applying a machine tool 338 to the upper surface of the metal plate 302. For example, this can be done in a similar or identical manner as described with reference to Figure 5 The third process step 316 described is completed in a similar or identical manner.

[0104] Unlike the previously described techniques, the process step of bending the metal plate 302 (i.e., the third process step 328) is performed with a flat pad 340 disposed below the stamped region 312. The flat pad 340 is harder than the material of the interconnect clip 100 such that the flat pad 340 does not deform from the force exerted by the metal plate 302. As the metal plate 302 is pressed downward, the flat pad 340 forms the lead contact surface 134 by deforming the shape of the metal plate 302. The three illustrations of the third process step 328 represent the gradual transformation of the metal plate 302 as the mechanical pressure is continuously applied to the upper surface of the metal plate 302. From the depicted sequence, it can be understood that the flat pad 340 provides a counterforce that holds the lower surface 306 of the metal plate 302 in a desired plane as the machine tool 338 exerts force on the upper surface of the metal plate 302. The bending and flattening can be performed simultaneously until the lead contact surface 134 is formed in the desired dimensions. A similar flattening effect can occur between the upper surface of the metal plate 302 and the machine tool 338 to cause the completed lead contact portion 106 to have parallel upper and lower surfaces that both extend to the outer end surface 138 of the interconnect clip 100.

[0105] Referring to Figure 9 and Figure 10 The techniques described form the interconnect clip 100 to have the bridge portion 104 and the lead contact portion 106 to achieve the advantageous geometry as previously described with a minimum number of process steps. In comparison to the techniques described with reference to Figure 7 The steps for forming the first and second bevels 322, 326 can be omitted.

[0106] As used herein, the term “substantially” encompasses absolute conformance with a specified requirement as well as minor deviations from absolute conformance with a requirement due to manufacturing process variations, assembly, and other factors that can cause deviations from design targets. The term “substantially” encompasses any of these deviations provided that the deviations are within process tolerances to achieve practical uniformity and the components described herein are capable of functioning according to the application requirements.

[0107] The terms “electrically connected,” “directly electrically connected,” and the like as used herein describe a permanent low impedance connection between elements of an electrical connection, e.g., direct contact between the relevant elements or a low impedance connection via a conductive intermediary such as solder, sinter, etc.

[0108] For ease of description, spatially relative terms such as "beneath", "below", "lower", "above", "upper" are used to describe an element's position relative to another element. These terms are intended to encompass different orientations of the device in addition to the orientation depicted in the figures. Furthermore, terms such as "first", "second", etc. are also used to describe various elements, regions, parts and the like, and are not intended to be limiting. Like terms refer to like elements throughout the description.

[0109] As used herein, the terms "have", "comprise", "include", "contain", "consist of", and the like, are open terms that indicate the presence of the stated element or elements but do not preclude the presence of additional elements or features. The articles "a", "an", and "the" are intended to include the plural as well as the singular, unless the context clearly indicates otherwise.

[0110] With the above variations and applications in mind, it should be understood that the present application is not limited by the foregoing description, nor by the accompanying drawings. Instead, the present application is limited only by the following claims, and their legal equivalents.

Claims

1. An interconnection fixture, comprising: The die contact portion includes opposing upper and lower surfaces; The bridge portion is adjacent to the core contact portion and includes opposing upper and lower surfaces; A lead contact portion, which is adjacent to the bridge portion and includes a lead contact surface or contact point; A first transition surface extends transversely from the lower surface of the bridge portion and reaches the lower surface of the die contact portion; as well as A second transition surface extends from the lower surface of the bridge portion toward the lower surface of the lead contact portion and is completely above the lower surface of the die contact portion. Wherein, the lower surface of the die contact portion extends along the first plane. The lower surface of the bridge portion is substantially flat, and the bridge portion extends along a second plane that is completely above the first plane for its entire length.

2. The interconnecting fixture according to claim 1, in, The full length of the bridge portion begins at the first transition surface and ends at the second transition surface.

3. The interconnecting fixture according to claim 2, wherein, The thickness of the bridge portion is substantially uniform over the entire length of the bridge portion, and the thickness of the bridge portion is measured between the upper surface and the lower surface of the bridge portion.

4. The interconnecting fixture according to claim 1, wherein, The lead contact portion includes the lead contact surface, and wherein the lead contact surface is a substantially flat lower surface of the interconnecting clamp extending along a third plane completely below the first plane.

5. The interconnecting fixture according to claim 4, wherein, The lead contact surface extends to the outer end surface of the interconnect clamp that is transverse to the extension of the lead contact surface.

6. The interconnecting fixture according to claim 1, wherein, The lead contact surface or contact point is located below the first plane.

7. A semiconductor packaging component, comprising: Including die pads on the die attachment surface; Conductive leads, which are spaced apart from the die pads and include substantially flat contact pads; A semiconductor die, mounted on a die pad and including a first terminal disposed on an upper surface of the semiconductor die, the upper surface of the semiconductor die being opposite to the die attachment surface; as well as An interconnecting clamp for electrically connecting the first terminal to the conductive lead, the interconnecting clamp comprising: Including the core contact portion of the upper and lower surfaces; The bridge portion is adjacent to the core contact portion and includes an upper surface and a lower surface; A lead contact portion, which is adjacent to the bridge portion and includes a lead contact surface or contact point; A first transition surface extends transversely from the lower surface of the bridge portion and reaches the lower surface of the die contact portion; and A second transition surface extends from the lower surface of the bridge portion toward the lower surface of the lead contact portion and is completely above the lower surface of the die contact portion. Wherein, the lower surface of the die contact portion is in close contact with the upper surface of the semiconductor die. The lead contact surface or contact point is electrically connected to the contact pad. Wherein, the lower surface of the die contact portion extends along a first plane parallel to the upper surface of the semiconductor die. Wherein, the lower surface of the bridge portion extends from the first position to the second position along a second plane that is completely above the first plane. Wherein, the first position is directly above the semiconductor die, and The second position is directly above the contact pad.

8. The semiconductor packaging assembly according to claim 7, wherein, The thickness of the bridge section is substantially uniform along its entire length, which spans from the first position to the second position.

9. The semiconductor packaging assembly according to claim 8, wherein, The upper surface of the bridge portion is substantially coplanar with the upper surface of the core contact portion.

10. The semiconductor packaging assembly of claim 7, wherein, The lead contact portion includes the lead contact surface, wherein the lead contact surface is in close proximity to the contact pad.

11. The semiconductor packaging assembly of claim 10, wherein, The lead contact surface extends to the outer end surface of the interconnect clamp that is transverse to the extension of the lead contact surface.

12. The semiconductor packaging assembly of claim 11, further comprising an electrically insulating encapsulating body body encapsulating the semiconductor die, wherein, The encapsulation body includes an upper surface, a lower surface, and a side surface extending between the upper surface and the lower surface, wherein the outer end surface of the interconnecting fixture is substantially parallel to the side surface of the encapsulation body.

13. The semiconductor packaging assembly according to claim 12, wherein, The upper surface of the die contact portion is exposed from the upper surface of the encapsulation body, and the lower surface of the die pad is exposed from the lower surface of the encapsulation body.

14. A method of forming an interconnecting fixture, the method comprising: Metal sheets are provided; A die contact portion, a bridge portion, and a first transition surface formed by the metal plate are formed, wherein the die contact portion and the bridge portion each include opposing upper and lower surfaces, and the first transition surface extends transversely from the lower surface of the bridge portion to the lower surface of the die contact portion. The metal plate forms a lead contact portion, which is adjacent to the bridge portion and includes a lead contact surface or contact point. A second transition surface is formed, which extends from the lower surface of the bridge portion toward the lower surface of the lead contact portion and completely above the lower surface of the die contact portion. The lower surface of the die contact portion is formed to extend along the first plane. The lower surface of the bridge portion is formed to extend the entire length of the bridge portion along a second plane that is completely above the first plane.

15. The method according to claim 14, wherein, The metal plate includes a generally flat upper surface and a lower surface that are parallel to each other and opposite to each other, and an edge side extending between the upper surface and the lower surface of the metal plate, wherein forming the die contact portion and the bridge portion includes stamping the lower surface of the metal plate to form a stamped area that is thinner than the unstamped area and extends to the edge side, wherein the unstamped area provides the upper and lower surfaces of the die contact portion, and wherein the stamped area provides the upper and lower surfaces of the bridge portion.

16. The method according to claim 15, wherein, Forming the lead contact portion involves bending a portion of the stamping region downwards by applying a machine tool to the upper surface of the metal plate in the stamping region.

17. The method according to claim 16, wherein, The lead contact portion is formed to include the lead contact surface, wherein the lead contact surface is a substantially flat lower surface of the interconnecting clamp extending along a third plane completely below the first plane.

18. The method according to claim 17, wherein, The lead contact surface is formed by arranging flat pads below the stamping area while the machine tool applies force to the upper surface of the metal plate.

19. The method according to claim 18, wherein, As the stamping area bends downward due to forces from the machine tool, the flat pads provide a counteracting force that holds the lower surface of the metal plate along a single plane.

Images