Combined structure, optical filter, image sensor, camera, and electronic device

Abstract

A combination structure includes an in-plane pattern of unit cells, where each unit cell includes a nanostructure and a light absorbing layer, each nanostructure having a size that is smaller than a near-infrared wavelength, the light absorbing layer being adjacent to the nanostructure and including a near-infrared absorbing material configured to absorb light in at least a portion of a near-infrared wavelength spectrum. The nanostructure defines a nanostructure array in the unit cell, and a wavelength width of a transmission spectrum of the combination structure in the near-infrared wavelength spectrum at 50% transmission is wider than a wavelength width of a transmission spectrum of the nanostructure array in the near-infrared wavelength spectrum at 50% transmission.

Description

Technical Field

[0001] The combined structure, filter, image sensor, camera module, and electronic devices are disclosed. Background Technology

[0002] Electronic devices that use image sensors, such as mobile phones, digital cameras, portable video cameras, or cameras, that store images as electrical signals are already in use.

[0003] These electronic devices may include filters to reduce or prevent optical distortion caused by light in regions other than the visible wavelength spectrum (e.g., other wavelength spectra) or to improve visibility by using light in other wavelength spectra. Summary of the Invention

[0004] Some example implementations provide a combined structure that can achieve desired optical properties of light beyond the visible wavelength region (“wavelength region” or “region” is interchangeably referred to herein as the “wavelength spectrum”) with a thin thickness.

[0005] Some example implementations provide a filter that includes this combined structure.

[0006] Some example implementations provide an image sensor that includes the combined structure or the filter.

[0007] Some example implementations provide a camera module that includes the combined structure, the filter, or the image sensor.

[0008] Some example implementations provide an electronic device that includes the combined structure, the filter, the image sensor, or the camera module.

[0009] According to some example embodiments, a composite structure may include an in-plane pattern of unit cells, each unit cell comprising a nanostructure and a light-absorbing layer adjacent to the nanostructure, each nanostructure having a size smaller than the near-infrared wavelength, the light-absorbing layer comprising a near-infrared absorbing material configured to absorb light in at least a portion of the near-infrared wavelength spectrum. The nanostructures may define an array of nanostructures within the unit cells. The wavelength width of the transmission spectrum of the composite structure in the near-infrared wavelength spectrum at 50% transmittance may be wider than the wavelength width of the transmission spectrum of the nanostructure array in the near-infrared wavelength spectrum at 50% transmittance.

[0010] The transmission spectrum in the near-infrared wavelength spectrum of the nanostructure array can have a first local minimum and a second local minimum that are separated from each other, as well as a first local maximum between the first local minimum and the second local minimum, and the difference between the transmittance at the first local minimum or the second local minimum and the transmittance at the first local maximum can be greater than about 30%.

[0011] The transmission spectrum in the near-infrared wavelength spectrum of the combined structure can have a third local minimum and a fourth local minimum that are separated from each other, and a second local maximum between the third local minimum and the fourth local minimum. The difference between the transmittance at the third local minimum or the fourth local minimum and the transmittance at the second local maximum can be less than the difference between the transmittance at the first local minimum or the second local minimum and the transmittance at the first local maximum.

[0012] The difference between the transmittance at the third or fourth local minimum and the transmittance at the second local maximum can be less than about 30%.

[0013] The nanostructure array may include a parallel pattern of a first nanostructure, a second nanostructure, and a third nanostructure, and the size of the gap between the first nanostructure and the second nanostructure may be different from the size of the gap between the second nanostructure and the third nanostructure.

[0014] The gap between the first nanostructure and the second nanostructure can be about 1.05 times to about 5 times the gap between the second nanostructure and the third nanostructure.

[0015] The nanostructure array may include a first nanostructure and a second nanostructure that are adjacent to each other, and the size of the first nanostructure may be different from the size of the second nanostructure.

[0016] The width of the first nanostructure can be approximately 1.05 to 5 times the width of the second nanostructure.

[0017] The thickness of the first nanostructure can be approximately 1.05 to 5 times the thickness of the second nanostructure.

[0018] The unit cell may include a first unit cell and a second unit cell that are adjacent to each other. The first unit cell may include a first nanostructure and a second nanostructure. The second unit cell may include a third nanostructure and a fourth nanostructure. The first nanostructure, the second nanostructure, the third nanostructure and the fourth nanostructure may be defined as a linear sequence of nanostructures extending in one direction. The size of the gap between the first nanostructure and the second nanostructure may be different from the size of the gap between the second nanostructure and the third nanostructure.

[0019] The gap between the first nanostructure and the second nanostructure can be about 0.2 to about 0.9 times or about 1.05 to about 5 times the gap between the second nanostructure and the third nanostructure.

[0020] The wavelength width of the transmission spectrum of the combined structure at 50% transmittance in the near-infrared wavelength spectrum can be about 1.2 to 5 times that of the wavelength width of the transmission spectrum of the nanostructure array at 50% transmittance in the near-infrared wavelength spectrum.

[0021] The transmission spectrum of the combined structure in the near-infrared wavelength spectrum has a wavelength width of about 40 nm to about 200 nm at 50% transmittance.

[0022] The light-absorbing layer may be located at at least one of the lower surface, upper surface, and / or one or more side surfaces of one or more of the nanostructures.

[0023] The nanostructure and the light-absorbing layer can come into contact with each other.

[0024] Near-infrared wavelengths can be in the range of greater than about 700 nm and less than or equal to about 1200 nm.

[0025] Near-infrared wavelengths can range from approximately 890 nm to approximately 990 nm.

[0026] Nanostructures can each comprise high refractive index materials having a refractive index greater than or equal to about 2.0 at a wavelength of 940 nm.

[0027] Nanostructures may each include titanium oxide, silicon, aluminum, III-V semiconductor compounds, or combinations thereof.

[0028] The maximum absorption wavelength of near-infrared absorbing materials can be in the range of approximately 890 nm to approximately 990 nm.

[0029] The thickness of the composite structure can be less than or equal to about 1 μm.

[0030] According to some example embodiments, a composite structure may include an in-plane pattern of unit cells. Each unit cell may include two or more nanostructures and a light-absorbing layer, each nanostructure having a size smaller than the near-infrared wavelength, the light-absorbing layer being adjacent to at least one of the lower surface, upper surface, and / or one or more side surfaces of one or more of the two or more nanostructures, the light-absorbing layer comprising a near-infrared absorbing material configured to absorb at least a portion of the near-infrared wavelength spectrum. The unit cells may include first and second unit cells adjacent to each other. The first unit cell may include a first nanostructure and a second nanostructure. The second unit cell may include a third nanostructure and a fourth nanostructure. The first, second, third, and fourth nanostructures may define a linear sequence of nanostructures extending in one direction. The size of the first nanostructure may differ from the size of the second nanostructure, or the size of the gap between the first and second nanostructures may differ from the size of the gap between the second and third nanostructures.

[0031] The size of the first nanostructure may differ from the size of the second nanostructure, and the width of the first nanostructure may be approximately 1.05 to approximately 5 times the width of the second nanostructure.

[0032] The gap between the first nanostructure and the second nanostructure may be different from the gap between the second nanostructure and the third nanostructure, and the gap between the first nanostructure and the second nanostructure may be about 0.2 to about 0.9 times or about 1.05 to about 5 times the gap between the second nanostructure and the third nanostructure.

[0033] According to some example implementations, a filter including this combined structure is provided.

[0034] According to some example implementations, a camera including the filter is provided.

[0035] According to some example embodiments, an image sensor may include: a semiconductor substrate including a plurality of photodiodes; and a filter on the semiconductor substrate and configured to block light in at least a portion of the near-infrared wavelength spectrum, wherein the filter includes the combined structure.

[0036] Image sensors may also include color filters on the light filters.

[0037] According to some example implementations, a camera includes this image sensor.

[0038] According to some example implementations, an electronic device includes the filter, the image sensor, or the camera.

[0039] It is possible to achieve the desired optical properties for light in the near-infrared wavelength spectrum with a thin thickness. Attached Figure Description

[0040] Figure 1 This is a top plan view illustrating the arrangement of multiple unit cells in a combined structure according to some example embodiments.

[0041] Figure 2 It is shown Figure 1 A schematic top view of an enlarged example of region A of the combined structure 10.

[0042] Figure 3 It is shown Figure 1 A schematic cross-sectional view of an enlarged example of region A of the combined structure 10.

[0043] Figure 4 It is shown Figure 1 A schematic cross-sectional view of another enlarged example of region A of the combined structure 10.

[0044] Figure 5 It is shown Figure 1 A schematic cross-sectional view of another enlarged example of region A of the combined structure 10.

[0045] Figure 6 It is shown Figure 1 A schematic cross-sectional view of another enlarged example of region A of the combined structure 10.

[0046] Figure 7 This is a schematic diagram illustrating one example of a camera module according to some exemplary embodiments.

[0047] Figure 8 This is a schematic diagram illustrating one example of a camera module according to some exemplary embodiments.

[0048] Figure 9 This is a cross-sectional view illustrating an example of an image sensor according to some exemplary embodiments.

[0049] Figure 10 This is a cross-sectional view illustrating another example of an image sensor according to some exemplary embodiments.

[0050] Figure 11 This is a cross-sectional view illustrating another example of an image sensor according to some exemplary embodiments.

[0051] Figure 12 This is a cross-sectional view illustrating another example of an image sensor according to some exemplary embodiments.

[0052] Figure 13 This is a graph showing the spectrum of a nanostructure array according to an example.

[0053] Figure 14 This is a graph showing the transmission spectrum of a combined structure according to an example.

[0054] Figure 15 This is a graph showing the transmission spectra according to Examples 1 to 4 and Reference Examples 1 and 2.

[0055] Figure 16 This is a graph showing the reflectance spectra according to Examples 1 to 4 and Reference Examples 1 and 2.

[0056] Figure 17 This is a graph showing the absorption spectra according to Examples 1 to 4 and Reference Examples 1 and 2.

[0057] Figure 18 This is a graph showing the transmission spectra according to Examples 1, 5, and 6, and Reference Example 3.

[0058] Figure 19 It is a graph showing the reflectance spectra according to Examples 1, 5 and 6 and Reference Example 3, and

[0059] Figure 20 It is a graph showing the absorption spectra according to Examples 1, 5 and 6 and Reference Example 3. Detailed Implementation

[0060] Hereinafter, exemplary embodiments will be described in detail so that those skilled in the art will understand them. However, this disclosure may be implemented in many different forms and is not to be construed as limited to the exemplary embodiments set forth herein.

[0061] In the accompanying drawings, the thickness of layers, films, panels, regions, etc., is exaggerated for clarity. Throughout the specification, the same reference numerals denote the same elements. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, it may be directly on that other element, or there may be intervening elements. Conversely, when an element is referred to as being "directly on" another element, there are no intervening elements.

[0062] The following description, with reference to the accompanying drawings, describes a combination structure according to some exemplary embodiments.

[0063] Figure 1 This is a top plan view illustrating the arrangement of multiple unit cells in a combined structure according to some example embodiments. Figure 2 It is shown Figure 1 A schematic top view of an enlarged example of region A of the combined structure 10. Figure 3 It is shown Figure 1 A schematic cross-sectional view of an enlarged example of region A of the combined structure 10.

[0064] According to some example embodiments, the combined structure 10 includes a plurality of unit cells (U) arranged repeatedly along an in-plane direction, for example, the plurality of unit cells (U) being arranged regularly or periodically along rows and / or columns. For example, the combined structure 10 may include a plurality of unit cells arranged repeatedly or periodically (e.g., in a pattern) in a plane to establish an in-plane (e.g., two-dimensional) pattern (e.g., an "array") of unit cells (U). A plurality of unit cells (U) arranged repeatedly in one or more in-plane directions may be interchangeably referred to herein as an in-plane pattern of unit cells (U), wherein the in-plane pattern may include at least one row pattern and / or column pattern of unit cells (U), and / or an array of unit cells (U) arranged in at least one row and / or at least one column (e.g., multiple rows and multiple columns).

[0065] Each unit cell (U) includes one or more three-dimensional nanostructures 11a and light-absorbing layers 12. In some example embodiments, a given unit cell (U) may include a single nanostructure 11a and a light-absorbing layer 12, and it will be understood that the description given herein regarding “nanostructure 11a” and / or multiple nanostructures 11a may be applied to nanostructures 11a in multiple unit cells (U), wherein each unit cell (U) includes a single, individual nanostructure 11a rather than multiple nanostructures 11a.

[0066] In some exemplary embodiments, each unit cell (U) may include two or more nanostructures 11a. In the accompanying drawings, in some exemplary embodiments, a structure is shown in which two nanostructures 11a are included in each unit cell (U), but some exemplary embodiments are not limited thereto. Each unit cell (U) may include two or more nanostructures 11a, for example, 2 to 10, 2 to 8, 2 to 7, 2 to 6, or 2 to 5 nanostructures 11a.

[0067] In some example embodiments, the unit cell (U) includes a plurality of nanostructures 11a, which may be arranged repeatedly or periodically along rows and / or columns in the plurality of unit cells (U) to form a nanostructure array 11. Again, the plurality of nanostructures 11a may define the nanostructure array 11 within the plurality of unit cells (U). The nanostructure array 11 may be a structure having optical properties referred to as metamaterials or metastructures, and may exhibit unique optical properties not present in two-dimensional planar structures depending on the repeated or periodic arrangement of the plurality of three-dimensional nanostructures 11a.

[0068] Nanostructure 11a may include a high-refractive-index material having a high refractive index. The refractive index may have a wavelength distribution, and each nanostructure 11a may include a high-refractive-index material having a refractive index, for example, greater than or equal to about 2.0, greater than or equal to about 2.3, greater than or equal to about 2.5, greater than or equal to about 3.0, greater than or equal to about 3.5, or greater than or equal to about 4.0 at about 900 nm to about 1000 nm (e.g., about 940 nm). In some example embodiments, the refractive index of nanostructure 11a may be about 2.0 to about 5.0, about 2.3 to about 5.0, about 2.5 to about 5.0, about 2.0 to about 4.0, about 2.3 to about 4.0, about 2.5 to about 4.0, or about 2.5 to about 3.5. In some example embodiments, each of the nanostructures 11a may include an insulator, conductor, semiconductor, or combination thereof having the said refractive index, such as oxides, nitrides, sulfides, metals, semiconductors, semiconductor compounds, or combinations thereof, such as titanium oxides, zinc oxides, indium oxides, zirconium oxides, silicon, aluminum, group III-V semiconductor compounds, or combinations thereof, but is not limited thereto.

[0069] When the terms “about” or “substantially” are used in conjunction with numerical values ​​in this specification, it is intended that the relevant numerical value includes a tolerance of ±10% around said value. When a range is specified, the range includes all values ​​therein, such as those with an increment of 0.1%.

[0070] The one or more nanostructures 11a may each be a three-dimensional structure having a specific (or optionally, predetermined) width (W) and thickness (t), and in some example embodiments may be cuboid, right hexahedral, cylindrical, or disk-shaped, but are not limited thereto. The cross-sectional shape of the nanostructure 11a may be, for example, rectangular or square.

[0071] The plurality of nanostructures 11a may be arranged with a specific (or, optionally, predetermined) period (p) and / or gap (g), wherein the period (p) may be the length between the centers of adjacent nanostructures 11a, and the gap (g) may be the length between the facing surfaces of adjacent nanostructures 11a.

[0072] The nanostructure array 11 and / or nanostructure 11a can be configured to reflect or absorb light of a specific (or, optionally, predetermined) wavelength, and thus exhibit optical properties. In some example embodiments, the reflection or absorption of light of the desired wavelength is achieved by controlling the shape, geometry, size, and / or orientation of the nanostructure 11a and / or the arrangement of the nanostructure array 11. In some example embodiments, one or more dimensions of the nanostructure 11a may be sub-wavelengths smaller than the wavelength of the light used for reflection or absorption (e.g., smaller than that specific wavelength). Here, said one or more dimensions of the nanostructure 11a may include width and / or thickness, and when the nanostructure 11a is cylindrical or disk-shaped, the width of the nanostructure 11a may be the diameter.

[0073] The nanostructure array 11 can be configured to reflect or absorb light of a specific (or, optionally, predetermined) wavelength belonging to the near-infrared wavelength spectrum (e.g., a particular near-infrared wavelength spectrum), wherein one or more dimensions of the nanostructure 11a (e.g., one or more of width (W), diameter, thickness (t), period (p), gap (g), or any combination thereof) can be smaller than the specific (or, optionally, predetermined) near-infrared wavelength belonging to the near-infrared wavelength spectrum. It will be understood that "near-infrared wavelength spectrum" as described herein with respect to the nanostructure 11a and / or the light-absorbing layer 12 can refer to the same near-infrared wavelength spectrum. Here, the near-infrared wavelength spectrum can be greater than about 700 nm and less than or equal to about 1200 nm, within this range, for example, greater than about 700 nm and less than or equal to about 1100 nm, greater than about 700 nm and less than or equal to about 1000 nm, about 750 nm to about 1100 nm, about 750 nm to about 1000 nm, about 800 nm to about 1000 nm, about 850 nm to about 990 nm, about 870 nm to about 990 nm, or about 890 nm to about 990 nm. For example, one or more dimensions of the nanostructure 11a (e.g., one or more of the width (W), diameter, thickness (t), period (p), gap (g), or any combination thereof) may be smaller than a specific (or, optionally, predetermined) near-infrared wavelength, wherein the specific near-infrared wavelength is, for example, greater than about 700 nm and less than or equal to about 1200 nm, within which, for example, greater than about 700 nm and less than or equal to about 1100 nm, greater than about 700 nm and less than or equal to about 1000 nm, about 750 nm to about 1100 nm, about 750 nm to about 1000 nm, about 800 nm to about 1000 nm, about 850 nm to about 990 nm, about 870 nm to about 990 nm, or about 890 nm to about 990 nm.

[0074] The width (W) of the nanostructure 11a may be less than or equal to about 1100 nm, for example, within the range of about 100 nm to about 1000 nm, about 100 nm to about 800 nm, about 100 nm to about 500 nm, about 200 nm to about 500 nm, or about 300 nm to about 500 nm.

[0075] The thickness (t) of the nanostructure 11a can be, for example, less than or equal to about 1100 nm, within the range of, for example, about 50 nm to about 1000 nm, about 50 nm to about 800 nm, about 50 nm to about 700 nm, about 50 nm to about 600 nm, about 50 nm to about 500 nm, about 100 nm to about 500 nm, about 150 nm to about 500 nm, or about 200 nm to about 400 nm.

[0076] The gap (g) of the nanostructure 11a can be, for example, less than or equal to about 1100 nm, in the range of, for example, about 50 nm to about 1000 nm, about 50 nm to about 500 nm, about 50 nm to about 400 nm, about 70 nm to about 400 nm, about 70 nm to about 300 nm, or about 80 nm to about 300 nm.

[0077] The period (p) of the nanostructure 11a can be, for example, less than or equal to about 1100 nm, in the range of, for example, about 200 nm to about 1000 nm, about 200 nm to about 800 nm, about 200 nm to about 700 nm, about 300 nm to about 700 nm, or about 400 nm to about 700 nm.

[0078] The nanostructure array 11 includes a plurality of nanostructures 11a arranged repeatedly or periodically along rows and / or columns in a plurality of unit cells (U) as described above, and a portion of the plurality of nanostructures 11a may differ from the remaining nanostructures 11a in at least one aspect of dimensions such as width (w), thickness (t), gap (g), and / or period (p).

[0079] In some example embodiments, at least one of the plurality of nanostructures 11a in each unit cell (U) may have a size different from the size of the rest of the nanostructure 11a (e.g., the remaining portion). In some example embodiments, when each unit cell (U) includes a first nanostructure 11a-1 and a second nanostructure 11a-2, the size of the first nanostructure 11a-1 may be different from the corresponding size of the second nanostructure 11a-2.

[0080] In some example embodiments, the width (W1) of the first nanostructure 11a-1 may differ from the width (W2) of the second nanostructure 11a-2. In some example embodiments, the width (W1) of the first nanostructure 11a-1 may be greater than the width (W2) of the second nanostructure 11a-2, and in some example embodiments, it is about 1.05 times to about 10 times the width (W2) of the second nanostructure 11a-2, and within this range, it is about 1.05 times to about 5 times, about 1.1 times to about 5 times, about 1.2 times to about 5 times, about 1.5 times to about 5 times, or about 2 times to about 5 times the width (W2) of the second nanostructure 11a-2.

[0081] In some example embodiments, the thickness (t1) of the first nanostructure 11a-1 may differ from the thickness (t2) of the second nanostructure 11a-2. In some example embodiments, the thickness (t1) of the first nanostructure 11a-1 may be thicker than the thickness (t2) of the second nanostructure 11a-2, in some example embodiments being about 1.05 times to about 10 times the thickness (t2) of the second nanostructure 11a-2, and within this range, being about 1.05 times to about 5 times, about 1.1 times to about 5 times, about 1.2 times to about 5 times, about 1.5 times to about 5 times, or about 2 times to about 5 times the thickness (t2) of the second nanostructure 11a-2.

[0082] In some example embodiments, the gap (g) between two nanostructures 11a in each unit cell (U) or its adjacent unit cell (U) may be different from the gap (g) between the remaining nanostructures 11a. In some example embodiments, for example, as at least Figure 3 As shown, the nanostructure array 11 includes parallel-arranged nanostructures 11a-1 to 11a-4 (e.g., a parallel pattern of nanostructures 11a-1 to 11a-4). When the first nanostructure 11a-1 and the second nanostructure 11a-2 are included in the first unit cell (U1), and the third nanostructure 11a-3 and the fourth nanostructure 11a-4 are included in the second unit cell (U2), the gap (g1) between the first nanostructure 11a-1 and the second nanostructure 11a-2 may be different from the gap (g2) between the second nanostructure 11a-2 and the third nanostructure 11a-3.

[0083] As described herein, in cases where any dimension is described differently from any other dimension (e.g., as mentioned above, gap (g1) is different from gap (g2)), it will be understood that the size of that dimension may be different from the size of other dimensions (e.g., the size of gap (g1) may be different from the size of gap (g2)).

[0084] like Figure 3As shown, the first unit unit U1 may include a first nanostructure 11a-1 and a second nanostructure 11a-2. The second unit unit U2 adjacent to the first unit unit U1 may include a third nanostructure 11a-3 and a fourth nanostructure 11a-4. The first nanostructure 11a-1 to the fourth nanostructure 11a-4 may define a linear sequence of nanostructures 11a extending in one direction. The size of the gap (g1) between the first nanostructure 11a-1 and the second nanostructure 11a-2 may be different from the size of the gap (g2) between the second nanostructure 11a-2 and the third nanostructure 11a-3.

[0085] In some example embodiments, the gap (g1) between the first nanostructure 11a-1 and the second nanostructure 11a-2 may be smaller than the gap (g2) between the second nanostructure 11a-2 and the third nanostructure 11a-3, and in some example embodiments, it is about 0.2 to about 0.9 times the gap (g2) between the second nanostructure 11a-2 and the third nanostructure 11a-3.

[0086] In some example embodiments, the gap (g1) between the first nanostructure 11a-1 and the second nanostructure 11a-2 may be greater than the gap (g2) between the second nanostructure 11a-2 and the third nanostructure 11a-3, and in some example embodiments, it is about 1.05 times to about 5 times the gap (g2) between the second nanostructure 11a-2 and the third nanostructure 11a-3.

[0087] However, this is not the only limitation, and when at least three nanostructures 11a are included in a unit cell (U), the gap (g) between two adjacent nanostructures 11a in a unit cell may be different from each other. In some example embodiments, one gap (g) between two adjacent nanostructures 11a may be about 0.2 to about 0.9 times or about 1.05 to about 5 times the other gap (g) between the other two adjacent nanostructures 11a.

[0088] In some example embodiments, the period (p) between two nanostructures 11a in each unit cell (U) or its adjacent unit cell (U) may be different from another period (p) between the remaining nanostructures 11a. In some example embodiments, when the first nanostructure 11a-1 and the second nanostructure 11a-2 are included in the first unit cell (U1) and the third nanostructure 11a-3 and the fourth nanostructure 11a-4 are included in the second unit cell (U2), the period (p1) between the first nanostructure 11a-1 and the second nanostructure 11a-2 may be different from the period (p2) between the second nanostructure 11a-2 and the third nanostructure 11a-3.

[0089] In some example embodiments, the size (e.g., width (W) and / or thickness (t)) of at least one of the plurality of nanostructures 11a in each unit cell (U) may be different from the size (e.g., width (W) and / or thickness (t)) of the other nanostructures 11a, and the gap (g) and / or period (p) between the plurality of nanostructures 11a in each unit cell (U) or its adjacent unit cells (U) may be different from the gap (g) and / or period (p) between the other nanostructures 11a. In some example embodiments, when the first nanostructure 11a-1 and the second nanostructure 11a-2 are included in the first unit cell (U1) and the third nanostructure 11a-3 and the fourth nanostructure 11a-4 are included in the second unit cell (U2), the width (W1) and / or thickness (t1) of the first nanostructure 11a-1 may be different from the width (W2) and / or thickness (t2) of the second nanostructure 11a-2, and the gap (g1) between the first nanostructure 11a-1 and the second nanostructure 11a-2 may be different from the gap (g2) between the second nanostructure 11a-2 and the third nanostructure 11a-3.

[0090] Thus, a portion of the nanostructure 11a, including the nanostructure array 11, can be varied with respect to size and / or arrangement to alter the spectrum of the nanostructure array 11 having a uniform size and arrangement of nanostructure 11a.

[0091] In some example embodiments, the transmission and reflection spectra of a nanostructure array 11 having a uniform size and arrangement of nanostructures 11a have a single peak in the near-infrared wavelength spectrum. However, the transmission and reflection spectra of a nanostructure array 11 having different sizes and / or arrangements of a portion of nanostructures 11a may have two or more separate peaks in the near-infrared wavelength spectrum. Here, the near-infrared wavelength spectrum can be greater than about 700 nm and less than or equal to about 1200 nm, within this range, for example, greater than about 700 nm and less than or equal to about 1100 nm, about 700 nm to about 1000 nm, about 750 nm to about 1100 nm, about 750 nm to about 1000 nm, about 800 nm to about 1000 nm, about 850 nm to about 990 nm, about 870 nm to about 990 nm, or about 890 nm to about 990 nm.

[0092] Thus, the transmission and reflection spectra of the nanostructure array 11 have two or more separate peaks in a specific (or, optionally, predetermined) near-infrared wavelength spectrum, thereby broadening the wavelength width exhibiting specific (or, optionally, predetermined) transmittance and reflectance compared to a spectrum with a single peak.

[0093] Figure 13 This is a graph showing the spectrum of a nanostructure array according to an example.

[0094] Reference Figure 13 The transmission spectrum (T1) of the nanostructure array 11 has two separate peaks in the near-infrared wavelength spectrum, and in some example embodiments, two separate local minima (relative minima M1 and M2) and a local maxima (M3) between these two separate local minima (M1 and M2). Reiterating, the transmission spectrum (T1) of the nanostructure array 11 may have a first local minima (M1) and a second local minima (M2) separated from each other, and a first local maxima (M3) between the first local minima (M1) and the second local minima (M2). Here, the local minima (M1 and M2) may be inflection points with transmittance lower than that at adjacent wavelengths, and the local maxima (M3) may be inflection points with transmittance higher than that at adjacent wavelengths. The minimum transmittance of the nanostructure array 11 may be the transmittance at one of the local minima (M1 or M2).

[0095] Here, the transmittance at local minima (M1 and M2) and the transmittance at local maxima (M3) can have a relatively large difference. In some example embodiments, the difference between the transmittance at one of the local minima (e.g., M1 or M2) and the transmittance at the local maxima (M3) can be greater than about 30%, greater than about 30% and less than or equal to about 80%, about 40% to about 80%, about 40% to about 70%, or about 40% to about 60%. In some example embodiments, the transmittance at local minima (M1 and M2) may be less than or equal to about 10%, less than or equal to about 5%, less than or equal to about 3%, less than or equal to about 2%, less than or equal to about 1%, less than or equal to about 0.5%, or about 0%, and the transmittance at local maxima (M3) may be greater than about 10%, greater than about 10% and less than or equal to about 80%, about 15% to about 80%, about 20% to about 80%, about 25% to about 80%, about 30% to about 70%, about 35% to about 70%, about 40% to about 70%, or about 45% to about 70%.

[0096] In some example embodiments, when the absorptivity of the nanostructure array 11 in the near-infrared wavelength spectrum is substantially zero, the reflectance spectrum R1 of the nanostructure array 11 in the near-infrared wavelength spectrum can be symmetrical to the transmission spectrum (T1), and the reflectance spectrum R1 has two separate local maxima (M4 and M5) and a local minimum (M6) between the two separate local maxima (M4 and M5).

[0097] Compared to a nanostructure array 11 with uniform size and arrangement of nanostructures 11a, the nanostructure array 11 according to some exemplary embodiments can have a modified spectrum and broaden wavelengths exhibiting specific (or, optionally, predetermined) transmittance. The nanostructure array 11 with this modified spectrum and the light-absorbing layer 12 disposed adjacent thereto complementarily combine, thus exhibiting high light absorption characteristics over a wide wavelength range.

[0098] The light-absorbing layer 12 can be configured to absorb light of a specific (or, optionally, predetermined) wavelength. For example, in at least... Figure 3 As shown, the light-absorbing layer 12 can be disposed adjacent to the nanostructure array 11 and, for example, can be in contact with some or all of the nanostructures 11a of the nanostructure array 11. As in at least Figure 3 As shown, the light-absorbing layer 12 may be located below (e.g., beneath) the plurality of nanostructures 11a and may be in contact with some or all of the lower surfaces of the plurality of nanostructures 11a. At least Figure 3 In the accompanying drawings, as an example, the light-absorbing layer 12 is disposed beneath the nanostructure 11a, but this disclosure is not limited thereto. The light-absorbing layer 12 may be disposed at at least one of the lower surface, upper surface, and / or one or more side surfaces of the nanostructure 11a, and may be in contact with at least one of the lower surface, upper surface, and / or one or more side surfaces of the nanostructure 11a.

[0099] The light-absorbing layer 12 includes a light-absorbing material configured to absorb light of a specific (or, optionally, predetermined) wavelength. The light-absorbing material may be one or more of an organic material, an inorganic material, an organic / inorganic material, or a combination thereof.

[0100] In some example embodiments, the light-absorbing layer 12 may include a near-infrared absorbing material configured to absorb light in at least a portion of a near-infrared wavelength spectrum. As described herein, a “wavelength spectrum” may include one or more wavelength spectra and may include a single wavelength spectrum, and in some example embodiments, the light-absorbing layer 12 may include a near-infrared absorbing material configured to absorb light in at least a portion of a near-infrared wavelength spectrum, which may be the same near-infrared wavelength spectrum as a near-infrared wavelength spectrum including one or more near-infrared wavelengths larger than a unit cell. For example, the near-infrared absorbing material may be configured to absorb light in at least a portion of a wavelength spectrum greater than about 700 nm and less than or equal to about 1200 nm, and the maximum absorption wavelength (λ) of the near-infrared absorbing material may be... max,AIt can, for example, fall within the range of about 700 nm and less than or equal to about 1100 nm, about 700 nm and less than or equal to about 1000 nm, about 750 nm to about 1100 nm, about 750 nm to about 1000 nm, about 800 nm to about 1000 nm, about 850 nm to about 990 nm, about 870 nm to about 990 nm, or about 890 nm to about 990 nm.

[0101] Near-infrared absorbing materials can be one or more materials and are not particularly limited, as long as they are configured to selectively absorb light in the near-infrared wavelength spectrum. Near-infrared absorbing materials can be organic materials, inorganic materials, organic / inorganic materials, and / or combinations thereof.

[0102] Near-infrared absorbing materials may include, for example, quantum dots, quinone-type metal complexes, polymethyl compounds, anthocyanin compounds, phthalocyanine compounds, phthalocyanine compounds, naphthylphthalocyanine compounds, imine compounds, diimmonium compounds, triarylmethane compounds, dipyrrolomethylene compounds, anthraquinone compounds, diquinone compounds, naphthoquinone compounds, squarylium compounds, rylene compounds, dinaphthalene-rylene compounds, pyranium compounds, squaraine compounds, thiaranium compounds, diketopyrrolopyrrole compounds, boron-dipyrrolomethylene compounds, nickel-dithiol complexes, ketone cyanide compounds, their derivatives, or combinations thereof, but are not limited thereto.

[0103] In some example embodiments, the light-absorbing layer 12 including the near-infrared absorbing material may have a refractive index (n) in the near-infrared wavelength spectrum that is less than about 2.0, less than or equal to about 1.9, or less than or equal to about 1.8, for example, greater than or equal to about 1.1 and less than about 2.0, about 1.1 to about 1.9, or about 1.1 to about 1.8. In some example embodiments, the average refractive index (n) in the wavelength spectrum from about 900 nm to about 1000 nm (e.g., 940 nm) may be less than about 2.0, less than or equal to about 1.9, or less than or equal to about 1.8, for example, greater than or equal to about 1.1 and less than about 2.0, about 1.1 to about 1.9, or about 1.1 to about 1.8. In some example embodiments, the light-absorbing layer 12 including the near-infrared absorbing material may have an extinction coefficient (k) of about 0.001 to about 0.5 in the near-infrared wavelength spectrum, for example, an extinction coefficient (k) of about 0.01 to about 0.5 in the wavelength spectrum of about 900 nm to about 1000 nm (e.g., 940 nm).

[0104] The light-absorbing layer 12 may be formed from a composition including the aforementioned near-infrared absorbing material, and in some example embodiments, from a cured product of the composition.

[0105] In addition to the near-infrared absorbing material described above, the composition may optionally include an adhesive. The adhesive may be, for example, an organic adhesive, an inorganic adhesive, an organic / inorganic adhesive, or a combination thereof, and is not particularly limited, as long as it is a material capable of being mixed with, dispersed in, or incorporated into the near-infrared absorbing material. The adhesive may be a curable adhesive, such as a thermosetting adhesive, a photocurable adhesive, or a combination thereof.

[0106] The adhesive may be, for example, (meth)acrylic acid adhesive, methylcellulose, ethylcellulose, hydroxypropyl methylcellulose (HPMC), hydroxypropyl cellulose (HPC), xanthan gum, polyvinyl alcohol (PVA), polyvinylpyrrolidone (PVP), cyclic olefin polymer (COP), carboxymethyl cellulose, hydroxyethyl cellulose, silicone, organic-inorganic hybrid materials, copolymers thereof, or combinations thereof, but is not limited thereto.

[0107] Near-infrared absorbing materials may be included, for example, in amounts of about 0.01 to about 50 parts by weight, about 0.01 to about 30 parts by weight, about 0.01 to about 20 parts by weight, about 0.01 to about 15 parts by weight, or about 0.01 to about 10 parts by weight, based on 100 parts by weight of the adhesive.

[0108] In addition to the near-infrared absorbing material described above, the composition may optionally include a solvent.

[0109] The composition can be applied to a substrate 13, which will be described later, dried, and then optionally cured. The application can be, for example, spin coating, slot coating, bar coating, doctor blade coating, slot die coating, and / or inkjet coating. Drying can be performed, for example, by natural drying, hot air drying, and / or heat treatment at a temperature higher than the boiling point of the solvent described above. Curing can be thermosetting, photocuring, or a combination thereof.

[0110] The light-absorbing layer 12 may have a thickness 12t ranging from about 1 nm to about 1000 nm, such as about 1 nm to about 800 nm, about 10 nm to about 700 nm, about 10 nm to about 500 nm, or about 10 nm to about 300 nm.

[0111] The substrate 13 is disposed below the nanostructure array 11 and the light absorption layer 12, and can support the nanostructure array 11 and the light absorption layer 12. The substrate 13 can be a transparent substrate, and in some example embodiments, it has a transmittance of greater than or equal to about 85% or greater than or equal to about 90% in a wavelength spectrum from about 400 nm to about 1000 nm.

[0112] The substrate 13 may have a lower refractive index than that of the nanostructure 11a, having an average refractive index of less than or equal to about 1.7 in some example embodiments in the range of about 900 nm to about 1000 nm (e.g., about 940 nm), and in some example embodiments in the range of about 1.4 to about 1.7. In some example embodiments, the substrate 13 may comprise organic materials, inorganic materials, organic / inorganic materials, or combinations thereof; in some example embodiments, it may comprise oxides, nitrides, sulfides, fluorides, polymers, or combinations thereof; and in some example embodiments, it may comprise glass, silicon oxide, aluminum oxide, magnesium fluoride, polystyrene, polymethyl methacrylate, polycarbonate, or combinations thereof, but is not limited thereto. The substrate 13 may be omitted as needed.

[0113] The composite structure 10 may have a thickness 10t of less than or equal to about 10 μm, less than or equal to about 5 μm, less than or equal to about 3 μm, less than or equal to about 2 μm, less than or equal to about 1 μm, less than or equal to about 900 nm, less than or equal to about 800 nm, less than or equal to about 700 nm, less than or equal to about 600 nm, or less than or equal to about 500 nm. In some example embodiments, the thickness of the composite structure 10 may be in the range of about 100 nm to about 10 μm, about 100 nm to about 5 μm, about 100 nm to about 3 μm, about 100 nm to about 2 μm, about 100 nm to about 1 μm, about 100 nm to about 900 nm, about 100 nm to about 800 nm, about 100 nm to about 700 nm, about 100 nm to about 600 nm, or about 100 nm to about 500 nm.

[0114] By combining the nanostructure array 11 and the light-absorbing layer 12, the combined structure 10 can exhibit high light absorption characteristics despite its thin thickness. This is based on the unique optical properties of the nanostructure array 11, which is referred to as a metamaterial or metastructure, and the nanostructure array 11 and / or nanostructure 11a can confine incident light of a specific (or, optionally, predetermined) wavelength, and the light confined by the nanostructure array 11 and / or nanostructure 11a can be absorbed multiple times in the adjacent light-absorbing layer 12, thus exhibiting a high absorption effect.

[0115] The amount of light absorbed multiple times can be much higher than the amount of light absorbed in a structure without the nanostructure array 11, in which incident light from a structure without the nanostructure array 11 (i.e., a planar structure) passes through the light absorption layer 12 once.

[0116] Furthermore, as described above, the portion of the nanostructure 11a forming the nanostructure array 11 can be altered to have different sizes and / or arrangements to exhibit a transmission spectrum with two separate peaks and thus exhibit a transmission spectrum with a relatively broad wavelength width.

[0117] Due to the complementary combination of the nanostructure array 11 and the light-absorbing layer 12, the combined structure 10 can stably reduce transmittance and reflectance while increasing absorptivity over a relatively wide wavelength range. The light-absorbing layer 12 can be configured to absorb light in the wavelength spectrum between two separate peaks in the transmission spectrum of the nanostructure array 11, thus reducing transmittance, but increasing absorptivity over a wide wavelength range in the near-infrared wavelength spectrum of the combined structure 10. Ultimately, the combined structure 10 can reduce transmittance but increase absorptivity over a wide range of the near-infrared wavelength spectrum, thus effectively blocking light in the near-infrared wavelength spectrum.

[0118] Figure 14 This is a graph showing the transmission spectrum of a combined structure according to an example.

[0119] Reference Figure 14 The transmission spectrum (T2) of the combined structure 10 overlaps with at least a portion of the transmission spectrum (T1) of the nanostructure array 11, but the wavelength width (W2) of the transmission spectrum (T2) of the combined structure 10 may be wider than the wavelength width (W1) of the transmission spectrum (T1) of the nanostructure array 11.

[0120] In some example embodiments, the wavelength width (W2) at 50% transmittance in the near-infrared wavelength spectrum of the transmission spectrum (T2) of the combined structure 10 (e.g., the near-infrared absorbing material of the light-absorbing layer 12 is configured to absorb the same specific near-infrared wavelength spectrum of light in at least a portion thereof) can be wider than the wavelength width (W1) at 50% transmittance in the near-infrared wavelength spectrum of the transmission spectrum (T1) of the nanostructure array 11. In some example embodiments, this is about 1.2 to about 10 times the wavelength width (W1) at 50% transmittance in the near-infrared wavelength spectrum of the transmission spectrum (T1) of the nanostructure array 11, and within this range, it is about 1.2 to about 5 times, or about 1.2 to about 3 times.

[0121] In some example embodiments, the wavelength width (W2) at 50% transmittance in the near-infrared wavelength spectrum of the transmission spectrum (T2) of the combined structure 10 can be from about 38 nm to about 200 nm, and within that range, it can be from about 40 nm to about 200 nm, from about 40 nm to about 180 nm, or from about 43 nm to about 150 nm.

[0122] In some example embodiments, similar to the transmission spectrum (T1) of the nanostructure array 11 in the near-infrared wavelength spectrum, the transmission spectrum (T2) of the combined structure 10 in the near-infrared wavelength spectrum may also have two separate peaks, and in some example embodiments, two separate local minima (Q1 and Q2) and a local maximum (Q3) between these two separate local minima (Q1 and Q2). Reiterating, the transmission spectrum (T2) of the combined structure 10 may have a first local minima (Q1) and a second local minima (Q2) separated from each other, and a first local maximum (Q3) between the first local minima (Q1) and the second local minima (Q2). Here, the local minima (Q1 and Q2) may be inflection points with transmittance lower than that at adjacent wavelengths, and the local maximum (Q3) may be an inflection point with transmittance higher than that at adjacent wavelengths. The minimum transmittance of the combined structure 10 may be the transmittance at one of the local minima (Q1 or Q2).

[0123] As described above, the light-absorbing layer 12 can be configured to absorb light in the wavelength spectrum between two separate peaks in the transmission spectrum of the above-described nanostructure array 11. Therefore, the transmittance difference between one of the local minima (e.g., at Q1 or Q2) and the local maxima (Q3) of the combined structure 10 can be smaller than the transmittance difference between one of the local minima (M1 or M2) and the local maxima (M3) of the nanostructure array 11. In some example embodiments, the transmittance difference between one of the local minima (Q1 or Q2) and the local maxima (Q3) of the combined structure 10 can be less than or equal to about 30%, about 0 to about 30%, about 0.1% to about 30%, about 3% to about 30%, about 5% to about 30%, about 5% to about 20%, or about 5% to about 10%. When the transmittance difference between one of the local minima (Q1 or Q2) and the local maxima (Q3) of the combined structure 10 is about 0.5%, less than or equal to about 0.3%, less than or equal to about 0.1%, or 0, the transmission spectrum can essentially have a single peak.

[0124] In some example embodiments, the spectrum of the combined structure 10 may have a minimum transmission wavelength (λ) in a wavelength spectrum greater than about 700 nm and less than or equal to about 1200 nm. min,TWithin this range, for example, the minimum transmission wavelength (λ) greater than about 700 nm and less than or equal to about 1100 nm, greater than about 700 nm and less than or equal to about 1000 nm, about 750 nm to about 1100 nm, about 750 nm to about 1000 nm, about 800 nm to about 1000 nm, about 850 nm to about 990 nm, about 870 nm to about 990 nm, or about 890 nm to about 990 nm. min,T The combined structure 10 at the minimum transmission wavelength (λ) min,T The transmittance at the location can be less than or equal to about 35%, and within this range, in some example embodiments, it is less than or equal to about 32%, less than or equal to about 30%, less than or equal to about 28%, less than or equal to about 25%, less than or equal to about 22%, less than or equal to about 20%, less than or equal to about 18%, less than or equal to about 15%, less than or equal to about 10%, or less than or equal to about 5%.

[0125] In some example embodiments, the reflectance of the near-infrared wavelength spectrum of the combined structure 10 can be significantly reduced compared to the reflectance of the near-infrared wavelength spectrum of the nanostructure array 11, and can be, for example, less than or equal to about 25%, less than or equal to about 22%, less than or equal to about 20%, less than or equal to about 15%, less than or equal to about 10%, less than or equal to about 5%, less than or equal to about 2%, or less than or equal to about 1%.

[0126] In some example embodiments, the absorptivity of the combined structure 10 can be 100% minus the transmittance and reflectance, which can be expressed, for example, as absorptivity = 100 - transmittance - reflectance. In some example embodiments, the absorption spectrum of the combined structure 10 can have a maximum absorption wavelength (λ) in a wavelength spectrum greater than about 700 nm and less than or equal to about 1200 nm. max,A Within this range, for example, greater than about 700 nm and less than or equal to about 1100 nm, greater than about 700 nm and less than or equal to about 1000 nm, about 750 nm to about 1100 nm, about 750 nm to about 1000 nm, about 800 nm to about 1000 nm, about 850 nm to about 990 nm, about 870 nm to about 990 nm, or about 890 nm to about 990 nm. The combined structure 10 at the maximum absorption wavelength (λ) max,A The absorption rate at the site can be greater than or equal to about 40%, greater than or equal to about 43%, greater than or equal to about 45%, or greater than or equal to about 50%, within the range of, for example, greater than or equal to about 55%, greater than or equal to about 60%, greater than or equal to about 65%, or greater than or equal to about 70%.

[0127] Figure 4 It is shown Figure 1A schematic cross-sectional view of another enlarged example of the combined structure 10 in region A.

[0128] According to some exemplary embodiments, the combined structure 10 includes: a nanostructure array 11, including a plurality of nanostructures 11a; a light-absorbing layer 12; and a base layer 13, which is similar to some exemplary embodiments (including at least...). Figures 1-3 (Example implementation shown).

[0129] However, according to some example implementations (including at least) Figure 4 The combined structure 10 of the example implementation shown is different from some example implementations (including...). Figures 1-3 In the example embodiment shown, the nanostructure array 11 and the light absorption layer 12 are disposed in the same layer. In some example embodiments, the light absorption layer 12 may be disposed on the side of the plurality of nanostructures 11a, and the light absorption layer 12 may be in contact with the side of the nanostructures 11a.

[0130] Figure 5 It is shown Figure 1 A schematic cross-sectional view of another enlarged example of the combined structure 10 in region A.

[0131] According to some example implementations (including at least) Figure 5 The illustrated example embodiment shows that the combined structure 10 includes: a nanostructure array 11, comprising a plurality of nanostructures 11a; a light-absorbing layer 12; and a base layer 13, which is similar to some example embodiments (including at least...). Figure 4 (Example implementation shown).

[0132] However, compared with some example implementations (including at least) Figure 4 The example implementation shown may differ from some example implementations (including at least...). Figure 5 The combined structure 10 (shown in the example embodiment) may include a light-absorbing layer 12 disposed below the nanostructure array 11 and in the same layer as the nanostructure array 11. In some example embodiments, the light-absorbing layer 12 may be disposed on the sides and under the plurality of nanostructures 11a, and the light-absorbing layer 12 may contact the nanostructures 11a at the sides and under the nanostructures 11a, respectively.

[0133] Figure 6 It is shown Figure 1 A schematic cross-sectional view of another enlarged example of the combined structure 10 in region A.

[0134] According to some example implementations (including at least) Figure 6The illustrated example embodiment shows that the combined structure 10 includes: a nanostructure array 11, comprising a plurality of nanostructures 11a; a light-absorbing layer 12; and a base layer 13, which is similar to some example embodiments (including at least...). Figure 5 (Example implementation shown).

[0135] However, compared with some example implementations (including at least) Figure 5 The example implementation shown may differ from some example implementations (including at least...). Figure 6 The combined structure 10 (as shown in the example embodiment) may include a light-absorbing layer 12 on the top and sides of the nanostructure array 11. In some example embodiments, the light-absorbing layer 12 may contact the nanostructure 11a on and on its sides, respectively.

[0136] By increasing light absorption in at least a portion of the near-infrared wavelength spectrum, the aforementioned combined structure 10 can exhibit high light absorption characteristics with a thin thickness, thereby realizing a thin-thickness filter. In some example embodiments, the combined structure 10, configured to selectively absorb light in the near-infrared wavelength spectrum, can be configured to effectively transmit light in the visible wavelength spectrum and effectively absorb light in the near-infrared wavelength spectrum, and thus can be effectively used as a filter configured to block light in the near-infrared wavelength spectrum in a sensor that senses light (such as an image sensor). Furthermore, as described above, the combined structure 10 can exhibit sufficient light absorption characteristics with a thin thickness and can be integrated into a sensor (such as an image sensor), thus realizing an internal filter.

[0137] The combined structure 10 can be used as a filter for all applications of filtering light of a specific (or, optionally, predetermined) wavelength spectrum, and can be effectively used as a near-infrared cutoff filter configured to filter light in the near-infrared wavelength spectrum. The filter can be usefully applied to electronic devices, including, for example, image sensors, camera modules, etc. These electronic devices can be, but are not limited to, digital cameras, portable camcorders, surveillance cameras (e.g., CCTV), vehicle cameras, medical cameras, mobile phones with built-in or external cameras, computers with built-in or external cameras, laptop computers with built-in or external cameras, robotic devices with built-in or external cameras, etc.

[0138] Below, an example of a camera module provided with the aforementioned combined structure 10 is described.

[0139] Figure 7 This is a schematic diagram illustrating one example of a camera module according to some exemplary implementations.

[0140] Reference Figure 7The camera module 20 (also referred to herein as the "camera") includes a lens barrel 21, a housing 22, a filter 10A, and an image sensor 23. In some example embodiments, the lens barrel 21 and / or housing 22 may be omitted.

[0141] The lens barrel 21 includes at least one lens for imaging an object, and the lens can be positioned along the optical axis. Here, the optical axis can be perpendicular to the lens barrel 21. The lens barrel 21 is internally housed in and coupled to the housing 22. The lens barrel 21 can move within the housing 22 along the optical axis for autofocusing.

[0142] The housing 22 supports and houses the lens barrel 21, and the housing 22 can be opened in the optical axis direction. Therefore, incident light from the housing 22 can pass through the lens barrel 21 and the filter 10A to reach the image sensor 23.

[0143] The housing 22 may be equipped with an actuator for moving the lens barrel 21 in the optical axis direction. The actuator may include a voice coil motor (VCM) comprising a magnet and a coil. However, various methods may be employed in addition to the actuator, such as mechanical drive systems or piezoelectric drive systems using piezoelectric devices.

[0144] The filter 10A may include the above-described combined structure 10 and is the same as described above.

[0145] The filter 10A may have a thickness of less than or equal to about 10 μm, less than or equal to about 5 μm, less than or equal to about 3 μm, less than or equal to about 2 μm, less than or equal to about 1 μm, less than or equal to about 900 nm, less than or equal to about 800 nm, less than or equal to about 700 nm, less than or equal to about 600 nm, or less than or equal to about 500 nm. In some example embodiments, the filter 10A may have a thickness of about 100 nm to about 10 μm, about 100 nm to about 5 μm, about 100 nm to about 3 μm, about 100 nm to about 2 μm, about 100 nm to about 1 μm, about 100 nm to about 900 nm, about 100 nm to about 800 nm, about 100 nm to about 700 nm, about 100 nm to about 600 nm, or about 100 nm to about 500 nm.

[0146] Image sensor 23 can converge an image of an object and thus store it as data, and the stored data can be displayed as an image through a display medium.

[0147] Image sensor 23 may be mounted in and electrically connected to a substrate (not shown). In some example embodiments, the substrate may be a printed circuit board (PCB) or electrically connected to a printed circuit board, and in some example embodiments, the printed circuit board may be a flexible printed circuit board (FPCB).

[0148] Image sensor 23 converges light passing through lens barrel 21 and filter 10A and generates video signal, and may be a complementary metal-oxide-semiconductor (CMOS) image sensor and / or a charge-coupled device (CCD) image sensor.

[0149] Figure 8 This is a schematic diagram illustrating another example of a camera module according to some example implementations.

[0150] Reference Figure 8 Similar to some example implementations (including) Figure 7 (As shown in the example embodiments), the camera module 20 according to some example embodiments includes a lens barrel 21, a housing 22, a filter 10A, and an image sensor 23.

[0151] However, according to some example implementations (including at least) Figure 8 In the camera module 20 of the illustrated example embodiment, the filter 10A and the image sensor 23 can be in contact with each other. For example, the filter 10A and the image sensor 23 can be provided integrally to achieve an image sensor 23A with an integrated filter, which is different from some example embodiments (including at least Figure 7 The example implementation shown is different.

[0152] In the following description, an example of an image sensor with an integrated filter will be described with reference to the accompanying drawings. As an example of an image sensor, a CMOS image sensor is described.

[0153] Figure 9 This is a cross-sectional view illustrating an example of an image sensor according to some exemplary implementations.

[0154] An integrated image sensor 23A according to some example embodiments includes: an image sensor 23 including a semiconductor substrate 110, a lower insulating layer 60, a color filter layer 70 and an upper insulating layer 80; and a light filter 10A.

[0155] The semiconductor substrate 110 may be a silicon substrate and integrates photosensitive devices 50a, 50b, and 50c, as well as a transmission transistor (not shown). Photosensitive devices 50a, 50b, and 50c may be photodiodes. In some example embodiments, photosensitive device 50a may be a blue photosensitive device 50a configured to sense light in the blue wavelength spectrum passing through a blue color filter 70a (described later), photosensitive device 50b may be a green photosensitive device 50b configured to sense light in the green wavelength spectrum passing through a green color filter 70b (described later), and photosensitive device 50c may be a red photosensitive device 50c configured to sense light in the red wavelength spectrum passing through a red color filter 70c (described subsequently). Photosensitive devices 50a, 50b, and 50c, as well as the transmission transistor, may be integrated in each pixel. The photosensitive devices 50a, 50b, and 50c sense light, and the sensed information may be transmitted by the transmission transistor.

[0156] Metal lines (not shown) and pads (not shown) are formed on the semiconductor substrate 110. To reduce signal delay, the metal lines and pads can be made of metals with low resistivity, such as aluminum (Al), copper (Cu), silver (Ag), and alloys thereof in some example embodiments, but are not limited thereto. However, not limited to this structure, the metal lines and pads can be disposed beneath the photosensitive devices 50a, 50b, and 50c.

[0157] A lower insulating layer 60 is formed on the metal lines and pads. The lower insulating layer 60 may be made of inorganic insulating materials such as silicon oxide and / or silicon nitride, or low dielectric constant (low K) materials such as SiC, SiCOH, SiCO and SiOF.

[0158] A color filter layer 70 is formed on the lower insulating layer 60. The color filter layer 70 includes a blue color filter 70a formed in the blue pixels, a green color filter 70b formed in the green pixels, and a red color filter 70c formed in the red pixels. However, this disclosure is not limited thereto, and at least one of the blue color filter 70a, green color filter 70b, or red color filter 70c may be replaced by a yellow color filter, a cyan color filter, or a magenta color filter.

[0159] An upper insulating layer 80 is formed on the color filter layer 70. The upper insulating layer 80 can provide a flat surface by reducing the stepped portions formed by the color filter layer 70. The upper insulating layer 80 can be made of inorganic insulating materials such as silicon oxide and / or silicon nitride or of organic insulating materials. The upper insulating layer 80 can be omitted if necessary.

[0160] A filter 10A is formed on the upper insulating layer 80. The filter 10A can be the aforementioned combined structure 10. As described above, the filter 10A may include: a nanostructure array 11, comprising a plurality of nanostructures 11a; a light-absorbing layer 12; and a base layer 13, and can, for example, block light in wavelength spectra other than the visible wavelength spectrum (such as the near-infrared wavelength spectrum). When the aforementioned upper insulating layer 80 is the same as the base layer 13 of the combined structure 10, either the upper insulating layer 80 or the base layer 13 may be omitted. The detailed description of the combined structure 10 is the same as described above.

[0161] A focusing lens 85 may be further formed on the filter 10A. However, this disclosure is not limited thereto, and the filter 10A may be disposed on the focusing lens 85. The focusing lens 85 can control the direction of incident light and focus the light into a region. In some example embodiments, the focusing lens 85 may have a cylindrical or hemispherical shape, but is not limited thereto.

[0162] A dual bandpass filter 90 may be disposed on the focusing lens 85. The dual bandpass filter 90 may selectively transmit light in at least two wavelengths of the incident light spectrum, and may selectively transmit light in the visible wavelength spectrum and the near-infrared wavelength spectrum, for example. For example, the dual bandpass filter 90 may be configured to selectively transmit light in the entire visible wavelength spectrum and a portion (e.g., a limited portion) of the near-infrared wavelength spectrum.

[0163] As described above, filter 10A can effectively transmit light in the visible wavelength spectrum and effectively absorb and block light in other regions (such as the near-infrared region) besides the visible wavelength spectrum, thus transmitting pure light in the visible wavelength spectrum to the image sensor, thereby reducing or preventing crosstalk that occurs when the signal caused by light in the visible wavelength spectrum crosses and mixes with another signal caused by light in the non-visible wavelength spectrum (especially the near-infrared wavelength spectrum). Again, filter 10A can be configured to block at least a portion of the near-infrared wavelength spectrum. For example, filter 10A can be configured to block at least a portion of the near-infrared wavelength spectrum in light incident on the surface of filter 10A away from the semiconductor substrate 110 from passing through filter 10A and incident on one or more portions and / or surfaces of some or all of the image sensor 23.

[0164] Specifically, the filter 10A can have a thin thickness of less than or equal to about 10 μm, less than or equal to about 5 μm, less than or equal to about 3 μm, less than or equal to about 2 μm, or less than or equal to about 1 μm. Therefore, the filter 10A and the image sensor 23 can be implemented as an integrated image sensor 23A, thus enabling the image sensor, camera module, and electronic devices equipped thereon to be made thin.

[0165] Figure 10 This is a cross-sectional view showing another example of an image sensor according to some example implementations.

[0166] According to some example implementations (including at least) Figure 10 The integrated image sensor 23A (shown in the example embodiment) includes: an image sensor 23, including a semiconductor substrate 110 integrating photosensitive devices 50a, 50b, and 50c, a lower insulating layer 60, and a color filter layer 70; and a color filter 10A, which is similar to some example embodiments (including at least Figure 9 (Example implementation shown).

[0167] However, according to some example implementations (including) Figure 10 The example implementation shown is similar to... Figure 9 The illustrated implementation differs; in the integrated image sensor 23A, the filter 10A is disposed below the color filter layer 70. Therefore, as... Figures 9-10 As shown, in some example embodiments, image sensor 23A may include a color filter layer 70, which may include one or more color filters 70a, 70b, or 70c, which may be on (e.g., indirectly thereon) the semiconductor substrate 110 and may be above the filter 10A (e.g., as shown in the image). Figure 10 (as shown) or below (e.g., as shown) Figure 9 (As shown in the figures). In the figures, filter 10A is shown as an example with a structure in which filter 10A is disposed between the lower insulating layer 60 and the color filter layer 70. However, this disclosure is not limited thereto, and filter 10A may be disposed between the semiconductor substrate 110 and the lower insulating layer 60.

[0168] Figure 11 This is a cross-sectional view showing another example of an image sensor according to some example implementations.

[0169] According to some example implementations (including at least) Figure 11 The integrated image sensor 23A (shown in the example embodiment) includes: an image sensor 23 comprising a semiconductor substrate 110 integrating photosensitive devices 50a, 50b, and 50c, a lower insulating layer 60, a color filter layer 70, and an upper insulating layer 80; and a color filter 10A, which is similar to some example embodiments (including at least Figure 9 (Example implementation shown).

[0170] However, according to some example implementations (including at least) Figure 11 The integrated image sensor 23A (as shown in the example embodiment) may include a photosensitive element 50d additionally integrated in the semiconductor substrate 110 for sensing light belonging to the infrared wavelength spectrum, which differs from some example embodiments (including at least Figure 9(Example implementation shown). The color filter layer 70 may include a transparent color filter or a white color filter (not shown) at a position corresponding to the photosensitive element 50d, or it may have only empty space without a separate color filter.

[0171] Filter 10A may be placed above or below only the blue filter 70a, green filter 70b and red filter 70c, but not above or below the transparent filter or white filter.

[0172] Dual bandpass filters can selectively transmit light in the visible and near-infrared wavelength spectra, for example.

[0173] In some example implementations, the photosensitive element 50d can be used as an auxiliary device to improve the sensitivity of the image sensor in low-light environments.

[0174] In some example implementations, the photosensitive element 50d can be used as an infrared sensor configured to sense light in the near-infrared wavelength spectrum. Infrared sensors can extend the dynamic range specifically for classifying black / white contrast, thus improving the sensing capability of long-range 3D images. Infrared sensors can be, for example, biometric sensors such as iris sensors, depth sensors, fingerprint sensors, and vascular distribution sensors, but are not limited to these.

[0175] Figure 12 This is a cross-sectional view showing another example of an image sensor according to some example implementations.

[0176] According to some example implementations (including at least) Figure 12 The integrated image sensor 23A (shown in the example embodiment) includes: an image sensor 23 comprising a semiconductor substrate 110 integrating photosensitive devices 50a, 50b, 50c, and 50d, a lower insulating layer 60, and a color filter layer 70; and a color filter 10A, which is similar to some example embodiments (including at least Figure 11 (Example implementation shown).

[0177] However, according to some example implementations (including at least) Figure 12 In the example embodiment shown, in the integrated image sensor 23A, the filter 10A is disposed below the color filter layer 70, which differs from some example embodiments (including at least Figure 11 (Example embodiment shown). In the drawings, filter 10A is shown as an example with a structure in which filter 10A is disposed between the lower insulating layer 60 and the color filter layer 70. However, this disclosure is not limited thereto, and filter 10A may be disposed between the semiconductor substrate 110 and the lower insulating layer 60.

[0178] Some exemplary implementations are described in more detail below with reference to examples. However, the present scope of the inventive concept is not limited to these examples.

[0179] Manufacturing of near-infrared absorption film

[0180] Preparation Example 1

[0181] Near-infrared absorbing compounds (Epolight) TM A composition was prepared by mixing a near-infrared absorbing compound (Epolin) and a cyclic olefin polymer (poly[[octahydro-5-(methoxycarbonyl)-5-methyl-4,7-methylene-1H-indene-1,3-diyl]-1,2-ethylenediyl], CAS No. 123322-60-1, Sigma-Aldrich Ltd.) in a mixed solvent of chloroform and cyclohexanone (weight ratio 1:1). Here, a near-infrared absorbing compound and a cyclic olefin polymer were used in a weight ratio of 0.5:9.5 to a concentration of 6.5 wt% of the composition. Subsequently, the composition was spin-coated (3000 rpm, 20 seconds) onto a SiO2 substrate to form a film approximately 800 nm thick.

[0182] Preparation Example 2

[0183] The film was formed using the same method as in Preparation Example 1, except that the weight ratio of the near-infrared absorbing compound and the cyclic olefin polymer was changed to 1:9.

[0184] Preparation Example 3

[0185] The film was formed using the same method as in Preparation Example 1, except that the weight ratio of the near-infrared absorbing compound to the cyclic olefin polymer was changed to 1.5:8.5.

[0186] Preparation Example 4

[0187] The film was formed using the same method as in Preparation Example 1, except that the weight ratio of the near-infrared absorbing compound and the cyclic olefin polymer was changed to 2:8.

[0188] Comparative Preparation Example 1

[0189] The film is formed using the same method as in Preparation Example 1, except that it does not include the near-infrared absorbing compound.

[0190] Performance evaluation of near-infrared absorption films

[0191] The performance of the membrane prepared according to Preparation Examples 1 to 4 and compared with Preparation Example 1 was examined.

[0192] Transmittance and absorptivity were measured using a UV-VIS-NIR spectrophotometer (Solid Spec-3700 DUV, Shimadzu Scientific Instruments), and film thickness was measured using an Alpha-Step (D-500 Stylus Profiler, KLA Corp.). Transmittance and absorptivity were used to obtain the extinction coefficient according to Equation 1.

[0193] [Relation 1]

[0194] T(λ)=exp(-α(λ)d)=exp(-4π / λ×k(λ)d)

[0195] In the formula, T(λ) represents the transmittance depending on the wavelength, λ represents the wavelength (unit: nm), k(λ) represents the extinction coefficient depending on the wavelength, and d represents the film thickness (unit: nm).

[0196] The refractive index and extinction coefficient were obtained from the polarization characteristic variation (Δ, Psi) using an ellipsometer (JA Woollam). Here, the extinction coefficient obtained from the ellipsometer corresponds to the extinction coefficient obtained from Equation 1.

[0197] The results are shown in Table 1.

[0198] Table 1

[0199]

[0200] Design and Evaluation of Composite Structures I

[0201] Based on the properties of the film, optical simulations of the combined structure were performed using FDTD (Finite Difference Time Domain, Lumerical Inc.).

[0202] Example 1

[0203] The combined structure is formed as a structure having a light-absorbing layer and a TiO2 nanostructure array formed in the same layer on a SiO2 substrate. Figure 4 ).

[0204] Based on the properties of the film prepared according to Example 1, the light-absorbing layer was designed to be 250 nm thick.

[0205] TiO2 nanostructure arrays were obtained by designing periodic patterns of the following TiO2 nanostructures (refractive index: 2.5 @ 940 nm).

[0206] - Shape: Cylinder

[0207] - Cross-sectional shape: Rectangular

[0208] - Width (W1 and W2): 420nm

[0209] -Thickness (t1 and t2): 250nm

[0210] - First gap (g1): 200nm

[0211] - Second gap (g2): 160nm

[0212] - First cycle (p1): 620nm

[0213] - Second cycle (p2): 580nm

[0214] Example 2

[0215] The same structure as in Example 1 is formed, except that the light-absorbing layer is designed based on the properties of the film prepared in Example 2.

[0216] Example 3

[0217] The same structure as in Example 1 is formed, except that the light-absorbing layer is designed based on the properties of the film prepared in Example 3.

[0218] Example 4

[0219] The same structure as in Example 1 is formed, except that the light-absorbing layer is designed based on the properties of the film prepared in Example 4.

[0220] Example 5

[0221] The same structure as in Example 1 is formed, except that the TiO2 nanostructure array is designed to have the following periodic pattern of TiO2 nanostructures.

[0222] - Shape: Cylinder

[0223] - Cross-sectional shape: Rectangular

[0224] - Width (W1 and W2): 420nm

[0225] -Thickness (t1 and t2): 250nm

[0226] - First gap (g1): 180nm

[0227] - Second gap (g2): 160nm

[0228] - First cycle (p1): 600nm

[0229] - Second cycle (p2): 580nm

[0230] Example 6

[0231] The same structure as in Example 1 is formed, except that the TiO2 nanostructure array is designed to have the following periodic pattern of TiO2 nanostructures.

[0232] - Shape: Cylinder

[0233] - Cross-sectional shape: Rectangular

[0234] - Width (W1 and W2): 420nm

[0235] -Thickness (t1 and t2): 250nm

[0236] - First gap (g1): 220nm

[0237] - Second gap (g2): 160nm

[0238] - First cycle (p1): 640nm

[0239] - Second cycle (p2): 580nm

[0240] Refer to Example 1

[0241] The structure was formed as a 250 nm thick light-absorbing layer on a SiO2 substrate without a TiO2 nanostructure array. The light-absorbing layer was designed based on the properties of the film prepared in Example 1.

[0242] Refer to Example 2

[0243] The combined structure was designed to have a cyclic olefin polymer layer (without near-infrared absorbing compounds) and a TiO2 nanostructure array in the same layer on a SiO2 substrate, according to Comparative Preparation Example 1. Figure 4 ).

[0244] The cyclic olefin polymer layer was designed to be 250 nm thick.

[0245] Similar to Example 1, the TiO2 nanostructure array was designed as a periodic pattern with TiO2 nanostructures (refractive index: 2.5@940nm).

[0246] See Example 3

[0247] The same structure as in Example 1 is formed, except that the TiO2 nanostructure array is designed to have the following periodic pattern of TiO2 nanostructures.

[0248] - Shape: Cylinder

[0249] - Cross-sectional shape: Rectangular

[0250] - Width (W1 and W2): 420nm

[0251] -Thickness (t1 and t2): 250nm

[0252] - First and second gaps (g1 and g2): 160nm

[0253] - First and second cycles (p1 and p2): 580nm

[0254] Evaluate

[0255] Evaluate the optical properties of the structures based on the examples and reference examples.

[0256] The results are shown in Tables 2 and 3, and... Figures 15 to 20 As shown in the image.

[0257] Figure 15 This is a graph showing the transmission spectra according to Examples 1 to 4 and Reference Examples 1 and 2. Figure 16 This is a graph showing the reflectance spectra according to Examples 1 to 4 and Reference Examples 1 and 2. Figure 17 This is a graph showing the absorption spectra according to Examples 1 to 4 and Reference Examples 1 and 2. Figure 18 This is a graph showing the transmission spectra according to Examples 1, 5, and 6, and Reference Example 3. Figure 19 This is a graph showing the reflectance spectra according to Examples 1, 5, and 6, and Reference Example 3. Figure 20 It is a graph showing the absorption spectra according to Examples 1, 5 and 6 and Reference Example 3.

[0258] Table 2

[0259]

[0260] Table 3

[0261]

[0262]

[0263] Refer to Tables 2 and 3 and Figures 15 to 20 Due to the complementary combination of the nanostructure array and the light-absorbing layer, the structures according to Examples 1 to 6 exhibit improved light absorption properties over a relatively wide wavelength range.

[0264] Although this disclosure has been described in conjunction with exemplary embodiments currently considered achievable, it will be understood that the inventive concept is not limited to the exemplary embodiments described above. Rather, the inventive concept is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.

[0265] This application claims priority and benefit to Korean Patent Application No. 10-2019-0109005, filed on September 3, 2019, with the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference.

Claims

1. A combined structure for a filter, comprising: In-plane pattern of a unit cell Each unit cell of the unit cell includes Nanostructures, each of which has a size smaller than the near-infrared wavelength, and Adjacent to the nanostructure is a light-absorbing layer comprising a near-infrared absorbing material configured to absorb light in at least a portion of the near-infrared wavelength spectrum. The nanostructure defines an array of nanostructures within the unit cell, and The combined structure has a wider wavelength width at 50% transmittance in the near-infrared wavelength spectrum than the nanostructure array has at 50% transmittance in the near-infrared wavelength spectrum. The wavelength width of the transmission spectrum of the combined structure in the near-infrared wavelength spectrum at 50% transmittance is 1.2 to 5 times that of the wavelength width of the transmission spectrum of the nanostructure array in the near-infrared wavelength spectrum at 50% transmittance.

2. The combined structure for a filter according to claim 1, wherein... The transmission spectrum of the nanostructure array in the near-infrared wavelength spectrum has a first local minimum and a second local minimum that are separated from each other, and a first local maximum between the first local minimum and the second local minimum. The difference between the transmittance at the first local minimum or the second local minimum and the transmittance at the first local maximum is greater than 30%.

3. The combined structure for a filter according to claim 2, wherein... The transmission spectrum of the combined structure in the near-infrared wavelength spectrum has a third local minimum and a fourth local minimum that are separated from each other, and a second local maximum between the third local minimum and the fourth local minimum. The difference between the transmittance at the third or fourth local minimum and the transmittance at the second local maximum is less than the difference between the transmittance at the first or second local minimum and the transmittance at the first local maximum.

4. The combined structure for a filter according to claim 3, wherein... The difference between the transmittance at the third or fourth local minimum and the transmittance at the second local maximum is less than or equal to 30%.

5. The combined structure for a filter according to claim 1, wherein... The nanostructure array comprises a parallel pattern of a first nanostructure, a second nanostructure, and a third nanostructure, and The size of the gap between the first nanostructure and the second nanostructure is different from the size of the gap between the second nanostructure and the third nanostructure.

6. The combined structure for a filter according to claim 5, wherein... The gap between the first nanostructure and the second nanostructure is 1.05 to 5 times the gap between the second nanostructure and the third nanostructure.

7. The combined structure for a filter according to claim 1, wherein... The nanostructure array includes a first nanostructure and a second nanostructure that are adjacent to each other, and The size of the first nanostructure is different from the size of the second nanostructure.

8. The combined structure for a filter according to claim 7, wherein the width of the first nanostructure is 1.05 to 5 times the width of the second nanostructure.

9. The combined structure for a filter according to claim 7, wherein the thickness of the first nanostructure is 1.05 to 5 times the thickness of the second nanostructure.

10. The combined structure for a filter according to claim 1, wherein... The unit cell includes a first unit cell and a second unit cell that are adjacent to each other. The first unit cell includes a first nanostructure and a second nanostructure. The second unit cell includes a third nanostructure and a fourth nanostructure. The first nanostructure, the second nanostructure, the third nanostructure, and the fourth nanostructure define a linear sequence of nanostructures extending in one direction. The size of the gap between the first nanostructure and the second nanostructure is different from the size of the gap between the second nanostructure and the third nanostructure.

11. The combined structure for a filter according to claim 10, wherein the gap between the first nanostructure and the second nanostructure is The gap between the second nanostructure and the third nanostructure is 0.2 to 0.9 times, or The gap between the second nanostructure and the third nanostructure is 1.05 to 5 times larger.

12. The combined structure for a filter according to claim 1, wherein the wavelength width of the transmission spectrum of the combined structure in the near-infrared wavelength spectrum at the 50% transmittance is 40 nm to 200 nm.

13. The combined structure for a filter according to claim 1, wherein the light-absorbing layer is located at at least one of the lower surface, upper surface and / or one or more side surfaces of one or more nanostructures of the nanostructure.

14. The combined structure for a filter according to claim 1, wherein the nanostructure is in contact with the light-absorbing layer.

15. The combined structure for a filter according to claim 1, wherein the near-infrared wavelength is in the range of greater than 700 nm and less than or equal to 1200 nm.

16. The combined structure for a filter according to claim 15, wherein the near-infrared wavelength is in the range of 890 nm to 990 nm.

17. The combined structure for a filter according to claim 1, wherein each of the nanostructures comprises a material having a refractive index greater than or equal to 2.0 at 940 nm.

18. The combined structure for a filter according to claim 17, wherein each of the nanostructures comprises titanium oxide, silicon, aluminum, a group III-V semiconductor compound, or a combination thereof.

19. The combined structure for a filter according to claim 1, wherein the maximum absorption wavelength of the near-infrared absorbing material is in the range of 890 nm to 990 nm.

20. The combined structure for a filter according to claim 1, wherein the thickness of the combined structure is less than or equal to 1 μm.

21. A combined structure for a filter, comprising: In-plane pattern of a unit cell Each unit cell in the unit cell includes Two or more nanostructures, each with a size smaller than the near-infrared wavelength, and A light-absorbing layer, adjacent to at least one of the lower surface, upper surface, and / or one or more side surfaces of one or more of the two or more nanostructures, the light-absorbing layer comprising a near-infrared absorbing material configured to absorb at least a portion of the near-infrared wavelength spectrum. The unit cell includes a first unit cell and a second unit cell that are adjacent to each other. The first unit cell includes a first nanostructure and a second nanostructure. The second unit cell includes a third nanostructure and a fourth nanostructure. The first nanostructure, the second nanostructure, the third nanostructure, and the fourth nanostructure define a linear sequence of nanostructures extending in one direction, and in The dimensions of the first nanostructure differ from those of the second nanostructure, and the width of the first nanostructure is 1.05 to 5 times the width of the second nanostructure. or The size of the gap between the first nanostructure and the second nanostructure is different from the size of the gap between the second nanostructure and the third nanostructure. The gap between the first nanostructure and the second nanostructure is 0.2 to 0.9 times the size of the gap between the second nanostructure and the third nanostructure, or 1.05 to 5 times the size of the gap between the second nanostructure and the third nanostructure.

22. A filter comprising the combined structure for a filter according to claim 1.

23. A camera comprising the filter according to claim 22.

24. An image sensor, comprising: Semiconductor substrate, including multiple photodiodes, and A filter, located on the semiconductor substrate and configured to block light in at least a portion of the near-infrared wavelength spectrum. The filter described herein includes the combined structure for a filter according to claim 1.

25. The image sensor of claim 24, further comprising a color filter on the filter.

26. A camera comprising the image sensor of claim 24.

27. An electronic device comprising the filter according to claim 22.

28. An electronic device comprising the camera according to claim 23.

29. An electronic device comprising an image sensor according to claim 24.

Images