Optoelectronic devices and sensors and electronic devices

Abstract

Optoelectronic devices, sensors, and electronic devices are disclosed. An optoelectronic device includes a first electrode and a second electrode, an active layer between the first electrode and the second electrode, and a plurality of auxiliary layers between the first electrode and the active layer. The auxiliary layers include a first auxiliary layer proximate to the active layer and a second auxiliary layer proximate to the first electrode. Energy levels of the active layer, the first auxiliary layer, the second auxiliary layer, and a work function of the first electrode are successively deeper or successively shallower.

Description

Technical Field

[0001] Optoelectronic devices, sensors, and electronic devices were disclosed. Background Technology

[0002] A photoelectric conversion device can receive incident light and convert the received incident light into an electrical signal. A photoelectric conversion device may include a photodiode and a phototransistor, and can be applied to a sensor or photodetector (e.g., included in a sensor or photodetector).

[0003] Sensors can achieve high resolution, thus allowing for smaller pixel sizes. The sensitivity of silicon photodiodes in organic sensors can degrade due to the reduced pixel size of the sensor and the decreased absorption area of ​​the silicon photodiode. Therefore, organic materials that can replace silicon in the photodiodes of organic sensors have been investigated.

[0004] Organic materials have high extinction coefficients and are configured to selectively absorb light in specific wavelengths of the spectrum depending on the molecular structure of the organic material. Therefore, they can simultaneously replace the photodiode and color filter of the sensor, thereby improving the sensor's sensitivity and contributing to the high integration of the sensor.

[0005] However, because such organic materials exhibit properties different from those of silicon due to their associated recombination behavior and high binding energy, it is difficult to accurately predict the properties of organic materials, and therefore the performance of photoelectric conversion devices may not be easy to control. Summary of the Invention

[0006] Some example implementations provide one or more optoelectronic devices that can improve charge extraction characteristics by reducing residual charge carriers.

[0007] Some example implementations provide sensors that include one or more optoelectronic devices.

[0008] Some example implementations provide electronic devices that include one or more optoelectronic devices or one or more sensors.

[0009] According to some exemplary embodiments, an optoelectronic device may include a first electrode and a second electrode, an active layer between the first electrode and the second electrode, and a plurality of auxiliary layers between the first electrode and the active layer. The plurality of auxiliary layers may include a first auxiliary layer and a second auxiliary layer, with the first auxiliary layer closer to the active layer relative to the second auxiliary layer, and the second auxiliary layer closer to the first electrode relative to the first auxiliary layer. The energy levels of the active layer, the first auxiliary layer, the second auxiliary layer, and the work function of the first electrode may sequentially increase in depth or decrease in depth, such that the magnitude of the energy level of the first auxiliary layer is between the magnitude of the energy level of the active layer and the magnitude of the energy level of the second auxiliary layer, and the magnitude of the energy level of the second auxiliary layer is between the magnitude of the energy level of the first auxiliary layer and the magnitude of the work function of the first electrode. The energy diagram of the active layer, the first auxiliary layer, the second auxiliary layer, and the first electrode may satisfy Relationship 1:

[0010] [Relation 1]

[0011] |ΔΦ1-ΔΦ2|≤0.1eV

[0012] In Equation 1, ΔΦ1 is the energy barrier between the active layer and the first auxiliary layer, and ΔΦ2 is the energy barrier between the second auxiliary layer and the first electrode.

[0013] The first auxiliary layer can contact the active layer, and the second auxiliary layer can contact the first electrode.

[0014] The energy diagrams of the active layer, the first auxiliary layer, the second auxiliary layer, and the first electrode can satisfy equations 2 and 3:

[0015] [Relation 2]

[0016] |ΔΦ1-ΔΦ3|≤0.1eV

[0017] [Relationship 3]

[0018] |ΔΦ3-ΔΦ2|≤0.1eV

[0019] In Equations 2 and 3, ΔΦ1 is the energy barrier between the active layer and the first auxiliary layer, ΔΦ2 is the energy barrier between the second auxiliary layer and the first electrode, and ΔΦ3 is the energy barrier between the first auxiliary layer and the second auxiliary layer.

[0020] Each of ΔΦ1, ΔΦ2 and ΔΦ3 can be less than or equal to about 0.5 eV.

[0021] The energy diagrams of the active layer, the first auxiliary layer, the second auxiliary layer, and the first electrode can satisfy equations 1E, 2E, and 3E:

[0022] [Relation 1E]

[0023] 0 < |ΔΦ1 - ΔΦ2| ≤ 0.05 eV

[0024] [Relation 2E]

[0025] 0 < |ΔΦ1 - ΔΦ3| ≤ 0.05 eV

[0026] [Relationship 3E]

[0027] 0 < |ΔΦ3 - ΔΦ2| ≤ 0.05 eV

[0028] In equations 1E to 3E, ΔΦ1 is the energy barrier between the active layer and the first auxiliary layer, ΔΦ2 is the energy barrier between the second auxiliary layer and the first electrode, and ΔΦ3 is the energy barrier between the first auxiliary layer and the second auxiliary layer.

[0029] The plurality of auxiliary layers may further include a third auxiliary layer between the first auxiliary layer and the second auxiliary layer. The energy levels of the active layer, the first auxiliary layer, the third auxiliary layer, the second auxiliary layer, and the work function of the first electrode successively become deeper or shallower, such that the magnitude of the energy level of the first auxiliary layer is between the magnitude of the energy level of the active layer and the energy level of the third auxiliary layer, the magnitude of the energy level of the third auxiliary layer is between the magnitude of the energy level of the first auxiliary layer and the energy level of the second auxiliary layer, and the magnitude of the energy level of the second auxiliary layer is between the magnitude of the energy level of the third auxiliary layer and the work function of the first electrode. The energy diagram of the active layer, the first auxiliary layer, the third auxiliary layer, the second auxiliary layer, and the first electrode can satisfy relations 4 and 5:

[0030] [Relationship 4]

[0031] |ΔΦ2-ΔΦ4|≤0.1eV

[0032] [Relation 5]

[0033] |ΔΦ1-ΔΦ5|≤0.1eV

[0034] In Equations 4 and 5, ΔΦ1 is the energy barrier between the active layer and the first auxiliary layer, ΔΦ2 is the energy barrier between the second auxiliary layer and the first electrode, ΔΦ4 is the energy barrier between the third auxiliary layer and the second auxiliary layer, and ΔΦ5 is the energy barrier between the first auxiliary layer and the third auxiliary layer.

[0035] The energy diagrams of the active layer, the first auxiliary layer, the third auxiliary layer, the second auxiliary layer, and the first electrode can satisfy relation 6:

[0036] [Relationship 6]

[0037] |ΔΦ4-ΔΦ5|≤0.1eV.

[0038] In relation 6, ΔΦ4 is the energy barrier between the third auxiliary layer and the second auxiliary layer, and ΔΦ5 is the energy barrier between the first auxiliary layer and the third auxiliary layer.

[0039] ΔΦ1, ΔΦ2, ΔΦ4 and ΔΦ5 are each less than or equal to approximately 0.5 eV.

[0040] The first electrode can be the anode, the second electrode can be the cathode, and each energy barrier can be the difference between HOMO energy levels.

[0041] The optoelectronic device may also include an electron buffer layer between the second electrode and the active layer.

[0042] The electron buffer layer may include lanthanides, calcium (Ca), potassium (K), aluminum (Al), or alloys thereof.

[0043] The electron buffer layer may include a first electron buffer layer and a second electron buffer layer. The first electron buffer layer is closer to the active layer than the second electron buffer layer, and the second electron buffer layer is closer to the second electrode than the first electron buffer layer. The work function of the LUMO level of the active layer, the LUMO level of the first electron buffer layer, the LUMO level of the second electron buffer layer, and the second electrode increases sequentially, such that the magnitude of the LUMO level of the first electron buffer layer is between the magnitude of the LUMO level of the active layer and the LUMO level of the second electron buffer layer, and the magnitude of the LUMO level of the second electron buffer layer is between the magnitude of the LUMO level of the first electron buffer layer and the work function of the second electrode. The energy diagram of the active layer, the first electron buffer layer, the second electron buffer layer, and the second electrode satisfies Equation 7:

[0044] [Relation 7]

[0045] |ΔΦ6-ΔΦ7|≤0.1eV

[0046] In Equation 7, ΔΦ6 is the energy barrier between the active layer and the first electron buffer layer, and ΔΦ7 is the energy barrier between the second electron buffer layer and the second electrode. The energy barriers ΔΦ6 and ΔΦ7 are the differences between the LUMO energy levels.

[0047] The energy diagrams of the active layer, the first electron buffer layer, the second electron buffer layer, and the second electrode can satisfy equations 8 and 9:

[0048] [Relation 8]

[0049] |ΔΦ6-ΔΦ8|≤0.1eV

[0050] [Relation 9]

[0051] |ΔΦ7-ΔΦ8|≤0.1eV

[0052] In Equations 8 and 9, ΔΦ6 is the energy barrier between the active layer and the first electron buffer layer, ΔΦ7 is the energy barrier between the second electron buffer layer and the second electrode, and ΔΦ8 is the energy barrier between the first electron buffer layer and the second electron buffer layer. The energy barriers ΔΦ6, ΔΦ7 and ΔΦ8 are the differences between the LUMO energy levels.

[0053] ΔΦ6, ΔΦ7 and ΔΦ8 can each be less than or equal to approximately 0.5 eV.

[0054] The first electrode can be a cathode, the second electrode can be an anode, and the energy barrier can be the difference between LUMO energy levels.

[0055] The optoelectronic device may also include a hole buffer layer between the second electrode and the active layer.

[0056] The first auxiliary layer and the second auxiliary layer may each have a thickness of less than or equal to about 10 nm.

[0057] The first auxiliary layer and the second auxiliary layer may each include organic materials.

[0058] The active layer can be a photoelectric conversion layer, which is configured to absorb light in at least a portion of the wavelength spectrum and convert the absorbed light into an electrical signal.

[0059] A sensor may include the optoelectronic device.

[0060] An electronic device may include the optoelectronic device.

[0061] This can reduce residual charge carriers to improve charge extraction characteristics. Attached Figure Description

[0062] Figure 1 This is a cross-sectional view illustrating an optoelectronic device according to some example embodiments.

[0063] Figure 2 It is shown Figure 1 The diagram shows the energy levels of the anode, auxiliary layer, and active layer in the optoelectronic device.

[0064] Figure 3 This is a cross-sectional view illustrating an optoelectronic device according to some example embodiments.

[0065] Figure 4 It is shown Figure 3 The diagram shows the energy levels of the anode, auxiliary layer, and active layer in the optoelectronic device.

[0066] Figure 5 This is a cross-sectional view illustrating an optoelectronic device according to some example embodiments.

[0067] Figure 6 It is shown Figure 5 The energy diagram of the energy levels of the components in the optoelectronic device is shown.

[0068] Figure 7 This is a cross-sectional view illustrating an optoelectronic device according to some example embodiments.

[0069] Figure 8 It is shown Figure 7 The energy diagrams of the cathode, auxiliary layer, and active layer in the optoelectronic device are shown.

[0070] Figure 9 This is a cross-sectional view illustrating an optoelectronic device according to some example embodiments.

[0071] Figure 10 It is shown Figure 9 The energy diagrams of the cathode, auxiliary layer, and active layer in the optoelectronic device are shown.

[0072] Figure 11 This is a schematic cross-sectional view of an example image sensor according to some exemplary implementations.

[0073] Figure 12 This is a schematic perspective view of an image sensor according to some example embodiments.

[0074] Figure 13 It is shown Figure 12 A cross-sectional view of an example image sensor.

[0075] Figure 14 This is a cross-sectional view illustrating an image sensor according to some example embodiments.

[0076] Figure 15 This is a schematic perspective view of an image sensor according to some example embodiments.

[0077] Figure 16 yes Figure 15 The image sensor shown is a cross-sectional view.

[0078] Figure 17 This shows the energy diagram of the anode-to-active layer energy levels of one or more optoelectronic devices according to Examples 1 and 2.

[0079] Figure 18 This is a diagram showing the energy levels from the anode to the active layer of one or more optoelectronic devices according to Comparative Example 1.

[0080] Figure 19 This is a diagram showing the energy levels from the anode to the active layer of one or more optoelectronic devices according to Comparative Example 2 and Comparative Example 6.

[0081] Figure 20 This is a diagram showing the energy levels from the anode to the active layer of one or more optoelectronic devices according to Comparative Example 3.

[0082] Figure 21 This is a diagram showing the energy levels from the anode to the active layer of one or more optoelectronic devices according to Comparative Example 4 and Comparative Example 7.

[0083] Figure 22 This is a diagram showing the energy levels from the anode to the active layer of one or more optoelectronic devices according to Comparative Example 5.

[0084] Figure 23 This is a diagram showing the energy levels from the anode to the active layer of one or more optoelectronic devices according to Comparative Example 8.

[0085] Figure 24 This is a graph showing the photoelectric conversion efficiency of one or more photoelectric conversion devices according to Example 1 and Comparative Examples 1 to 4.

[0086] Figure 25 This is a graph showing the photoelectric conversion efficiency of one or more photoelectric conversion devices according to Example 2 and Comparative Examples 1, 6 and 7.

[0087] Figure 26 These are schematic diagrams of electronic devices according to some example implementations. Detailed Implementation

[0088] Example implementations will be described in detail below and can be readily performed by those skilled in the art. However, this disclosure may be embodied in many different forms and is not to be construed as limited to the example implementations set forth herein.

[0089] In the accompanying drawings, the thickness of layers, films, panels, areas, etc., is exaggerated for clarity.

[0090] It will be understood that when an element, such as a layer, film, region, or substrate, is referred to as being "on" another element, it can be directly on said other element, or there may be intervening elements. In contrast, when an element is referred to as being "directly on" another element, there are no intervening elements. It will also be understood that when an element is referred to as being "on" another element, it can be on or under said other element.

[0091] It will be understood that an element and / or its properties may be stated herein as “identical” or “equal” to other elements, and it will also be understood that an element and / or its properties stated herein as “identical” or “equal” to other elements may be “identical” or “equal” to, or “substantially identical” or “substantially equal” to, said other elements and / or their properties. Element and / or its properties being “substantially identical” or “substantially equal” to other elements and / or their properties will be understood to include elements and / or their properties being identical or equal to said other elements and / or their properties within manufacturing tolerances and / or material tolerances. Element and / or its properties being identical or substantially identical to other elements and / or their properties may be structurally identical or substantially identical, functionally identical or substantially identical, and / or compositionally identical or substantially identical.

[0092] It will be understood that elements and / or their properties (e.g., structure, properties of one or more elements, length, distance, energy level, energy barrier, etc.) described herein as "substantially" identical encompass elements and / or their properties (e.g., structure, properties of one or more elements, length, distance, energy level, energy barrier, etc.) within manufacturing tolerances and / or material tolerances, and / or elements and / or their properties (e.g., structure, properties of one or more elements, length, distance, energy level, energy barrier, etc.) with a relative difference of equal to or less than 10%. Furthermore, regardless of whether the elements and / or their properties (e.g., structure, properties of one or more elements, length, distance, energy level, energy barrier, etc.) are modified to be “substantially”, it will be understood that these elements and / or their properties (e.g., structure, properties of one or more elements, length, distance, energy level, energy barrier, etc.) should be interpreted as including manufacturing or operational tolerances (e.g., ±10%) surrounding the elements and / or their properties (e.g., structure, properties of one or more elements, length, distance, energy level, energy barrier, etc.).

[0093] When the terms “about” or “substantially” are used in conjunction with numerical values ​​in this specification, it is intended that the relevant numerical values ​​include a tolerance of ±10% around the stated values. When a range is specified, the range includes all values ​​within that range, such as increments of 0.1%.

[0094] When elements, properties, etc. are described here as having “small” or “very small” differences between each other, it will be understood that the difference between the sizes of the elements and / or properties can be equal to or less than 10% of the size of the described elements, properties, etc.

[0095] As used herein, unless otherwise defined, “substituted” means that the hydrogen atoms of a compound are replaced by substituents selected from: halogen atom, hydroxyl, alkoxy, nitro, cyano, amino, azide, amido, hydrazono, hydrazino group, carbonyl, carbamoyl, thiol, ester, carboxyl or a salt thereof, sulfonic acid or a salt thereof, phosphate or a salt thereof, silyl, C1 to C20 alkyl, C2 to C20 alkenyl, C2 to C20 alkynyl, C6 to C30 aryl, C7 to C30 aralkyl, C1 to C30 alkoxy, C1 to C20 heteroalkyl, C3 to C20 heteroaryl, C3 to C20 heteroarylalkyl, C3 to C30 cycloalkyl, C3 to C15 cycloalkenyl, C6 to C15 cycloalkynyl, C3 to C30 heterocycloalkyl, or combinations thereof.

[0096] As used herein, unless otherwise defined, “hetero” refers to a composition comprising one to four heteroatoms selected from N, O, S, Se, Te, Si, and P.

[0097] As used here, “combination” refers to a mixture and two or more stacked structures.

[0098] As used here, the energy level is either the highest occupied molecular orbital (HOMO) level or the lowest unoccupied molecular orbital (LUMO) level.

[0099] As used herein, the work function or energy level is expressed as an absolute value (e.g., as an absolute magnitude) from the vacuum energy level. Furthermore, when the work function or energy level (e.g., its magnitude) is referred to as deep, high, or large, it can have a large absolute value based on "0 eV" of the vacuum energy level, while when the work function or energy level (e.g., its magnitude) is referred to as shallow, low, or small, it can have a small absolute value based on "0 eV" of the vacuum energy level.

[0100] As used herein, the work function and energy level are measured using photoelectron spectroscopy such as ultraviolet photoelectron spectroscopy (UPS) or an AC-3 device (RIKEN Keiki Co., Ltd.). Specifically, the work function and energy level can be obtained by measuring the photoelectric work function of a thin film with a thickness of approximately 20 nm to approximately 30 nm using an AC-3 device, and by calculating the emission energy attributed to the photoelectron effect for the radiated energy via the following relationship:

[0101] [Relational Formula]

[0102] E = h·c / λ

[0103] (h: Planck's constant, c: speed of light, λ: wavelength).

[0104] The following describes optoelectronic devices according to some example implementations.

[0105] In some example embodiments, the optoelectronic device may include a pair of electrodes and an active layer between the electrodes, and in some example embodiments, the active layer may include an optoelectronic material. In some example embodiments, the optoelectronic material may include, but is not limited to, a material that receives light and exhibits electrical properties and / or a material that receives an electric field and emits light. The optoelectronic device may be, for example, a photoelectric conversion device, a light-emitting device, a solar cell, or a light sensor, but is not limited to these.

[0106] In some example embodiments, the optoelectronic device may be an organic optoelectronic device comprising at least one organic material, and may be an organic diode comprising at least one organic material. The organic optoelectronic device may be, for example, an organic photoelectric conversion device, an organic light-emitting diode, an organic solar cell, or an organic light sensor, but is not limited thereto.

[0107] Here, optoelectronic conversion devices are described as examples of optoelectronic devices.

[0108] Figure 1 This is a cross-sectional view showing an optoelectronic device according to some example embodiments.

[0109] Reference Figure 1 According to some exemplary embodiments, the optoelectronic device 100 (hereinafter also referred to as device 100) includes an anode 10, a cathode 20, an active layer 30, an auxiliary layer 40, and an electron buffer layer 50. As described herein, the anode 10 and the cathode 20 may each be referred to as one of the first electrode and the second electrode, wherein the first electrode may be one of the anode 10 and the cathode 20, and the second electrode may be the other of the anode 10 and the cathode 20.

[0110] Substrate (not shown), for example in at least Figure 11 , Figure 13-14 and Figure 16 The semiconductor substrate 110 shown can be disposed on the anode 10 side or the cathode 20 side. The substrate can be made of, for example, (e.g., may at least partially include): inorganic materials, such as glass; organic materials, such as polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyamide, polyethersulfone, or combinations thereof; or a silicon wafer. The substrate can be omitted.

[0111] Anode 10 and cathode 20 face each other.

[0112] At least one of the anode 10 and cathode 20 may be a transparent electrode. The transparent electrode may have a high transmittance of about 80%. In some example embodiments, the transparent electrode may include at least one of oxide conductors, carbon conductors, and metal thin films. The oxide conductor may be, for example, one or more selected from indium tin oxide (ITO), indium zinc oxide (IZO), zinc tin oxide (ZTO), aluminum tin oxide (ATO), and aluminum zinc oxide (AZO). The carbon conductor may be one or more selected from graphene and carbon nanostructures. The metal thin film may be a very thin film comprising aluminum, magnesium, silver, gold, alloys thereof, or combinations thereof.

[0113] One of the anode 10 and the cathode 20 can be a reflective electrode. The reflective electrode can have, for example, a low transmittance of less than about 10% or a high reflectance of greater than or equal to about 5%. The reflective electrode can include a reflective conductor such as a metal, and can include, for example, aluminum (Al), silver (Ag), gold (Au), or alloys thereof.

[0114] In some example implementations, the anode 10 and the cathode 20 may each be a transparent electrode.

[0115] In some example implementations, the anode 10 may be a transparent electrode, and the cathode 20 may be a reflective electrode.

[0116] In some example implementations, the anode 10 may be a reflective electrode, and the cathode 20 may be a transparent electrode.

[0117] like Figure 1 As shown, the active layer 30 can be disposed between the anode 10 and the cathode 20.

[0118] The active layer 30 is a photoelectric conversion layer configured to absorb light in at least a portion of the wavelength spectrum (e.g., some or all of the visible wavelength spectrum, some or all of the infrared wavelength spectrum, some or all of the near-infrared wavelength spectrum, some or all of the ultraviolet wavelength spectrum, any combination thereof, etc.) and convert the absorbed light into an electrical signal. In some example embodiments, the photoelectric conversion layer may be configured to convert a portion of light in the green wavelength spectrum (hereinafter referred to as "green light"), light in the blue wavelength spectrum (hereinafter referred to as "blue light"), light in the red wavelength spectrum (hereinafter referred to as "red light"), light in the infrared wavelength spectrum (hereinafter referred to as "infrared light"), and / or light in the ultraviolet wavelength spectrum (hereinafter referred to as "ultraviolet light") into an electrical signal.

[0119] In some example implementations, the active layer 30 can be configured to selectively absorb any one of blue, green, red, infrared, and ultraviolet light. Here, selective absorption of one of blue, green, red, infrared, and ultraviolet light means the peak absorption wavelength (λ) of the light absorption spectrum.max The light absorption spectrum can be in one of the following wavelength regions: less than about 380 nm, greater than or equal to about 380 nm and less than about 500 nm, about 500 nm to about 600 nm, greater than about 600 nm and less than or equal to about 700 nm, and greater than about 700 nm and less than or equal to about 3000 nm, and the peak value of the light absorption spectrum in the corresponding wavelength region is significantly higher than the peak value of the light absorption spectrum in other wavelength regions.

[0120] The active layer 30 may include at least one p-type semiconductor 32 and at least one n-type semiconductor 34 forming a pn junction 36, and may generate excitons by receiving light from the outside, and then separate the generated excitons into holes and electrons.

[0121] The p-type semiconductor 32 and the n-type semiconductor 34 can be independently light-absorbing materials; for example, at least one of the p-type semiconductor 32 and the n-type semiconductor 34 can be an organic light-absorbing material. In some example embodiments, at least one of the p-type semiconductor 32 and the n-type semiconductor 34 can be a wavelength-selective light-absorbing material, configured to selectively absorb light in a specific (or alternatively, predetermined) wavelength spectrum; for example, at least one of the p-type semiconductor 32 and the n-type semiconductor 34 can be a wavelength-selective organic light-absorbing material. The peak absorption wavelength (λ) of the p-type semiconductor 32 and the n-type semiconductor 34... max () can be in the same wavelength spectrum or in different wavelength spectra.

[0122] In some example embodiments, the p-type semiconductor 32 may be an organic material having a core structure that includes an electron-donating moiety, a p-conjugated linking group, and an electron-accepting moiety.

[0123] p-type semiconductor 32 can be represented, for example, by chemical formula 1, but is not limited thereto.

[0124] [Chemical Formula 1]

[0125] EDG–HA-EAG

[0126] In chemical formula 1,

[0127] HA is a pi conjugated linking group and can be a C2 to C30 heterocyclic group having at least one of O, S, Se, Te, and Si.

[0128] EDG is the electron-donating part, and can be an electron-donating group, and

[0129] EAG is an electron-accepting part, and can be an electron-accepting group.

[0130] In some example embodiments, the p-type semiconductor 32 represented by chemical formula 1 may be represented, for example, by chemical formula 1A.

[0131] [Chemical Formula 1A]

[0132]

[0133] In chemical formula 1A,

[0134] X can be O, S, Se, Te, SO, SO2, or SiR. a R b ,

[0135] Ar can be a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C3 to C30 heterocyclic group, or a fused ring of two or more of the above.

[0136] Ar 1a and Ar 2a It can be independently a substituted or unsubstituted C6 to C30 aryl group, or a substituted or unsubstituted C3 to C30 heteroaryl group.

[0137] Ar 1a and Ar 2a They can exist independently or they can link together to form fused rings, and

[0138] R 1a To R 3a R a and R b It can be hydrogen, deuterium, substituted or unsubstituted C1 to C30 alkyl, substituted or unsubstituted C6 to C30 aryl, substituted or unsubstituted C3 to C30 heteroaryl, substituted or unsubstituted C1 to C6 alkoxy, halogen or cyano.

[0139] In some example implementations, in chemical formula 1A, Ar 1a and Ar 2aIt can independently be one of the following: substituted or unsubstituted phenyl, substituted or unsubstituted naphthyl, substituted or unsubstituted anthraquinyl, substituted or unsubstituted phenanthryl, substituted or unsubstituted pyridinyl, substituted or unsubstituted pyridinyl, substituted or unsubstituted pyrazinyl, substituted or unsubstituted quinolinyl, substituted or unsubstituted isoquinolinyl, substituted or unsubstituted naphthyridinyl group, substituted or unsubstituted cinnolinyl (group), substituted or unsubstituted quinazolinyl, substituted or unsubstituted phthalazinyl, substituted or unsubstituted benzotriazinyl, substituted or unsubstituted pyridopyrazinyl, substituted or unsubstituted pyridopyrimidineyl, and substituted or unsubstituted pyridylpyridazinyl.

[0140] In some example implementations, Ar of chemical formula 1A 1a and Ar 2a They can be linked together to form a loop, or in some example implementations, Ar 1a and Ar 2a It can be done via single key, -(CR) g R h ) n2 -(n² is 1 or 2), -O-, -S-, -Se-, -N=, -NR i -、-SiR j R k -and-GeR l R m - One of them is linked to the other. Here, R g To R m It may be hydrogen, substituted or unsubstituted C1 to C30 alkyl, substituted or unsubstituted C6 to C30 aryl, substituted or unsubstituted C3 to C30 heteroaryl, substituted or unsubstituted C1 to C6 alkoxy, halogen or cyano, independently.

[0141] In some example embodiments, the p-type semiconductor 32 represented by chemical formula 1 may be represented, for example, by chemical formula 1B or chemical formula 1C.

[0142]

[0143] In chemical formula 1B or chemical formula 1C

[0144] X 1 is Se, Te, O, S, SO or SO2,

[0145] Ar 3It can be a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C3 to C30 heterocyclic group, or a fused ring of two or more of the above.

[0146] R 1 To R 3 It can be independently one of the following: hydrogen, deuterium, substituted or unsubstituted C1 to C30 alkyl, substituted or unsubstituted C1 to C30 alkoxy, substituted or unsubstituted C6 to C30 aryl, substituted or unsubstituted C3 to C30 heteroaryl, halogen, cyano, cyano-containing and combinations thereof.

[0147] G can be a single bond, -O-, -S-, -Se-, -N=, -(CR f R g ) k -、-NR h -、-SiR i R j -、-GeR k R l -、-(C(R m )=C(R n ))- and SnR o R p One of them, of which R f R g R h R i R j R k R l R m R n R o and R p It can independently be one of hydrogen, halogen, substituted or unsubstituted C1 to C10 alkyl, substituted or unsubstituted C1 to C10 alkoxy, and substituted or unsubstituted C6 to C12 aryl, R f and R g R i and R j R k and R l R m and R n and R o and R p They can exist independently or be linked together to form a ring; k can be 1 or 2.

[0148] Y 2 It can be O, S, Se, Te, and C(R) q (CN) one of them (where R) qIt is one of hydrogen, cyano (-CN), and C1 to C10 alkyl groups.

[0149] R 6a To R 6d R 7a To R 7d R 16 and R 17 It can independently be one of hydrogen, substituted or unsubstituted C1 to C30 alkyl, substituted or unsubstituted C6 to C30 aryl, substituted or unsubstituted C3 to C30 heteroaryl, halogen, cyano, cyano-containing, and combinations thereof.

[0150] R 6a To R 6d They can exist independently or two adjacent ones can be linked together to form a fused ring, and

[0151] R 7a To R 7d They can exist independently or two adjacent ones can be linked together to form a fused ring.

[0152] In some example implementations, Ar of chemical formula 1B 3 It can be benzene, naphthalene, anthracene, thiophene, selenophene, tellurophene, pyridine, pyrimidine, or two or more of the aforementioned fused rings.

[0153] The n-type semiconductor 34 can be, for example, a fullerene or a fullerene derivative, but is not limited thereto.

[0154] The active layer 30 may include an intrinsic layer (I layer) in which p-type semiconductor 32 and n-type semiconductor 34 are mixed as a bulk heterojunction. Here, p-type semiconductor 32 and n-type semiconductor 34 may be mixed in the following volume ratios: about 1:9 to about 9:1, for example about 2:8 to about 8:2, about 3:7 to about 7:3, about 4:6 to about 6:4 or about 5:5.

[0155] The active layer 30 may include a double layer comprising a p-type layer containing the aforementioned p-type semiconductor 32 and an n-type layer containing the aforementioned n-type semiconductor 34. Here, the thickness ratio of the p-type layer to the n-type layer may be from about 1:9 to about 9:1, for example, from about 2:8 to about 8:2, from about 3:7 to about 7:3, from about 4:6 to about 6:4, or about 5:5.

[0156] In addition to the intrinsic layer, the active layer 30 may also include a p-type layer and / or an n-type layer. The p-type layer may include the aforementioned p-type semiconductor 32, and the n-type layer may include the aforementioned n-type semiconductor 34. In some example embodiments, they may be included in various combinations such as p-type layer / I-layer, I-layer / n-type layer, p-type layer / I-layer / n-type layer, etc.

[0157] The auxiliary layer 40 can be a hole auxiliary layer between the anode 10 and the active layer 30, and the hole auxiliary layer can include, for example, a hole transport layer, a hole injection layer, and / or an electron blocking layer. The auxiliary layer 40 can serve as a path for transporting charge carriers (e.g., holes) separated from the active layer 30 to the anode 10. Here, the transport direction of the charge carriers (e.g., holes) can be the direction through the active layer 30, the auxiliary layer 40, and the anode 10 in sequence.

[0158] In some example embodiments, the auxiliary layer 40 includes multiple layers, referred to herein as multiple auxiliary layers, wherein the multiple auxiliary layers include at least a first auxiliary layer 40a and a second auxiliary layer 40b. The first auxiliary layer 40a may be configured to be closest to the active layer 30, such that the first auxiliary layer 40a can be understood as being close to the active layer 30 relative to the second auxiliary layer 40b and / or between the active layer 30 and the second auxiliary layer 40b, and in some example embodiments may be in contact with the active layer 30. The second auxiliary layer 40b may be configured to be closest to the anode 10, such that the second auxiliary layer 40b can be understood as being close to the anode 10 relative to the first auxiliary layer 40a and / or between the anode 10 and the first auxiliary layer 40a, and in some example embodiments may be in contact with the anode 10.

[0159] Figure 2 This is an energy diagram showing the energy levels of the anode 10, auxiliary layer 40, and active layer 30.

[0160] Reference Figure 2 Separated holes in the active layer 30 can be transported to the anode 10 along the HOMO level. In some example embodiments, holes can travel along the HOMO level (HOMO) of the active layer 30. 30 ), the HOMO level of the first auxiliary layer 40a (HOMO) 40a ), the HOMO level of the second auxiliary layer 40b (HOMO) 40b ) and the work function (WF) of anode 10 10 )transmission.

[0161] Here, the HOMO level of active layer 30 (HOMO) 30 ), the HOMO level of the first auxiliary layer 40a (HOMO) 40a ), the HOMO level of the second auxiliary layer 40b (HOMO) 40b ) and the work function (WF) of anode 10 10 The energy level of the active layer 30 can be progressively shallower from the vacuum level. In some example embodiments, the HOMO level of the active layer 30 is... 30 It can be the deepest, with the work function (WF) of anode 10. 10 It can be the shallowest, and the first auxiliary layer 40a HOMO level (HOMO)40a ) and the HOMO level of the second auxiliary layer 40b (HOMO 40b It can be found at the HOMO level in the active layer 30 (HOMO) 30 The work function (WF) of anode 10 10 Between ), as a result, the HOMO energy level (HOMO) of the first auxiliary layer 40a. 40a The size of ) can be in the HOMO level of the active layer 30 (HOMO) 30 The size of ) and the HOMO level of the second auxiliary layer 40b (HOMO) 40b The size between ) and the HOMO level of the second auxiliary layer 40b (HOMO 40b The size of ) can be in the HOMO level of the first auxiliary layer 40a (HOMO 40a The magnitude of ) and the work function (WF) of anode 10 10 The size of the HOMO level in active layer 30 is between [a certain value]. In other words, the HOMO level in active layer 30 is [a certain value]. 30 ), the HOMO level of the first auxiliary layer 40a (HOMO) 40a ), the HOMO level of the second auxiliary layer 40b (HOMO) 40b ) and the work function (WF) of anode 10 10 It can have cascaded energy levels.

[0162] In some example implementations, the HOMO level of the active layer 30 (HOMO 30 ), the HOMO level of the first auxiliary layer 40a (HOMO) 40a ), the HOMO level of the second auxiliary layer 40b (HOMO) 40b ) and the work function (WF) of anode 10 10 It can have a stepped shape.

[0163] Specific (or alternatively, predetermined) energy barriers may exist between adjacent layers. These energy barriers may include the energy barrier (ΔΦ1) between the active layer 30 and the first auxiliary layer 40a, the energy barrier (ΔΦ2) between the second auxiliary layer 40b and the anode 10, and the energy barrier (ΔΦ3) between the first auxiliary layer 40a and the second auxiliary layer 40b. The energy barrier (ΔΦ1) may be a HOMO level (HOMO energy level) of the active layer 30. 30 ) and the HOMO level of the first auxiliary layer 40a (HOMO 40a The difference between the two, the energy barrier (ΔΦ2) can be the HOMO level of the second auxiliary layer 40b (HOMO). 40b The work function (WF) of anode 10 10 The difference between the two, the energy barrier (ΔΦ3) can be the HOMO level of the first auxiliary layer 40a (HOMO).40a ) and the HOMO level of the second auxiliary layer 40b (HOMO 40b The difference between ).

[0164] The energy barriers (ΔΦ1, ΔΦ2 and ΔΦ3) between adjacent layers can have very small differences and / or can be essentially equal.

[0165] In some example embodiments, the energy barrier (ΔΦ1) between the active layer 30 and the first auxiliary layer 40a, and the energy barrier (ΔΦ2) between the second auxiliary layer 40b and the anode 10, may have small differences and / or be substantially equal. In some example embodiments, the energy diagrams of the active layer 30, the first auxiliary layer 40a, the second auxiliary layer 40b, and the anode 10 may satisfy relation 1.

[0166] [Relation 1]

[0167] |ΔΦ1-ΔΦ2|≤0.1eV

[0168] In some example embodiments, the energy barrier (ΔΦ1) between the active layer 30 and the first auxiliary layer 40a, and the energy barrier (ΔΦ3) between the first auxiliary layer 40a and the second auxiliary layer 40b, may have very small differences and / or be substantially equal. In some example embodiments, the energy diagrams of the active layer 30, the first auxiliary layer 40a, and the second auxiliary layer 40b may satisfy relation 2.

[0169] [Relationship 2]

[0170] |ΔΦ1-ΔΦ3|≤0.1eV

[0171] In some example embodiments, the energy barrier (ΔΦ3) between the first auxiliary layer 40a and the second auxiliary layer 40b, and the energy barrier (ΔΦ2) between the second auxiliary layer 40b and the anode 10, may have very small differences and / or be substantially equal. In some example embodiments, the energy diagrams of the first auxiliary layer 40a, the second auxiliary layer 40b, and the anode 10 may satisfy relation 3.

[0172] [Relationship 3]

[0173] |ΔΦ3-ΔΦ2|≤0.1eV

[0174] In some example embodiments, the energy barriers (ΔΦ1) between the active layer 30 and the first auxiliary layer 40a, the energy barrier (ΔΦ2) between the second auxiliary layer 40b and the anode 10, and the energy barrier (ΔΦ3) between the first auxiliary layer 40a and the second auxiliary layer 40b may have small differences and / or be substantially equal. In some example embodiments, the energy diagrams of the active layer 30, the first auxiliary layer 40a, the second auxiliary layer 40b, and the anode 10 may simultaneously satisfy Equations 1, 2, and 3.

[0175] Based on the active layer 30, the first auxiliary layer 40a, the second auxiliary layer 40b, and the anode 10 satisfying one or more of Equations 1, 2, and 3, the energy barriers (ΔΦ1, ΔΦ2, and ΔΦ3) between the active layer 30, the first auxiliary layer 40a, the second auxiliary layer 40b, and the anode 10 satisfy one or more of Equations 1, 2, and 3. Therefore, hole transport delay at the interface of the layers present in the hole transport path can be prevented, resulting in high charge extraction efficiency. Furthermore, undesirable charge carriers remaining at the interface between adjacent layers can be reduced or prevented, thereby reducing or preventing image retention due to accumulated residual charge carriers. Therefore, the electrical performance of device 100 and / or sensors, electronic devices, etc., including device 100 can be improved.

[0176] Within this range, the energy diagrams of the active layer 30, the first auxiliary layer 40a, the second auxiliary layer 40b, and the anode 10 can satisfy relation 1A, relation 2A, and / or relation 3A.

[0177] [Relation 1A]

[0178] 0 < |ΔΦ1 - ΔΦ2| ≤ 0.1 eV

[0179] [Relation 2A]

[0180] 0 < |ΔΦ1 - ΔΦ3| ≤ 0.1 eV

[0181] [Relationship 3A]

[0182] 0 < |ΔΦ3 - ΔΦ2| ≤ 0.1 eV

[0183] Within this range, the energy diagrams of the active layer 30, the first auxiliary layer 40a, the second auxiliary layer 40b, and the anode 10 can satisfy relation 1B, relation 2B, and / or relation 3B.

[0184] [Relation 1B]

[0185] |ΔΦ1-ΔΦ2|≤0.07eV

[0186] [Relation 2B]

[0187] |ΔΦ1-ΔΦ3|≤0.07eV

[0188] [Relation 3B]

[0189] |ΔΦ3-ΔΦ2|≤0.07eV

[0190] Within this range, the energy diagrams of the active layer 30, the first auxiliary layer 40a, the second auxiliary layer 40b, and the anode 10 can satisfy relation 1C, relation 2C, and / or relation 3C.

[0191] [Relation 1C]

[0192] 0 < |ΔΦ1 - ΔΦ2| ≤ 0.07 eV

[0193] [Relation 2C]

[0194] 0 < |ΔΦ1 - ΔΦ3| ≤ 0.07 eV

[0195] [Relational Formula 3C]

[0196] 0 < |ΔΦ3 - ΔΦ2| ≤ 0.07 eV

[0197] Within this range, the energy diagrams of the active layer 30, the first auxiliary layer 40a, the second auxiliary layer 40b, and the anode 10 can satisfy relational equation 1D, relational equation 2D, and / or relational equation 3D.

[0198] [Relational 1D]

[0199] |ΔΦ1-ΔΦ2|≤0.05eV

[0200] [Relational 2D]

[0201] |ΔΦ1-ΔΦ3|≤0.05eV

[0202] [Relational 3D]

[0203] |ΔΦ3-ΔΦ2|≤0.05eV

[0204] Within this range, the energy diagrams of the active layer 30, the first auxiliary layer 40a, the second auxiliary layer 40b, and the anode 10 can satisfy relation 1E, relation 2E, and / or relation 3E.

[0205] [Relation 1E]

[0206] 0 < |ΔΦ1 - ΔΦ2| ≤ 0.05 eV

[0207] [Relation 2E]

[0208] 0 < |ΔΦ1 - ΔΦ3| ≤ 0.05 eV

[0209] [Relationship 3E]

[0210] 0 < |ΔΦ3 - ΔΦ2| ≤ 0.05 eV

[0211] Within this range, the energy diagrams of the active layer 30, the first auxiliary layer 40a, the second auxiliary layer 40b, and the anode 10 can satisfy relation 1F, relation 2F, and / or relation 3F.

[0212] [Relation 1F]

[0213] |ΔΦ1-ΔΦ2|≤0.03eV

[0214] [Relation 2F]

[0215] |ΔΦ1-ΔΦ3|≤0.03eV

[0216] [Relationship 3F]

[0217] |ΔΦ3-ΔΦ2|≤0.03eV

[0218] Within this range, the energy diagrams of the active layer 30, the first auxiliary layer 40a, the second auxiliary layer 40b, and the anode 10 can satisfy relation 1G, relation 2G, and / or relation 3G.

[0219] [Relational Formula 1G]

[0220] 0 < |ΔΦ1 - ΔΦ2| ≤ 0.03 eV

[0221] [Relational 2G]

[0222] 0 < |ΔΦ1 - ΔΦ3| ≤ 0.03 eV

[0223] [Relational 3G]

[0224] 0 < |ΔΦ3 - ΔΦ2| ≤ 0.03 eV

[0225] Within this range, the energy diagrams of the active layer 30, the first auxiliary layer 40a, the second auxiliary layer 40b, and the anode 10 can satisfy relation 1H, relation 2H, and / or relation 3H.

[0226] [Relation 1H]

[0227] |ΔΦ1-ΔΦ2|≤0.01eV

[0228] [Relation 2H]

[0229] |ΔΦ1-ΔΦ3|≤0.01eV

[0230] [Relation 3H]

[0231] |ΔΦ3-ΔΦ2|≤0.01eV

[0232] Within this range, the energy diagrams of the active layer 30, the first auxiliary layer 40a, the second auxiliary layer 40b, and the anode 10 can satisfy relation 1I, relation 2I, and / or relation 3I.

[0233] [Relation 1I]

[0234] 0 < |ΔΦ1 - ΔΦ2| ≤ 0.01 eV

[0235] [Relation 2I]

[0236] 0 < |ΔΦ1 - ΔΦ3| ≤ 0.01 eV

[0237] [Relation 3I]

[0238] 0 < |ΔΦ3 - ΔΦ2| ≤ 0.01 eV

[0239] In some example embodiments, the energy barriers (ΔΦ1, ΔΦ2, and ΔΦ3) may each be less than or equal to about 0.5 eV, and within this range, may be less than or equal to about 0.4 eV, less than or equal to about 0.3 eV, or less than or equal to about 0.25 eV. In some example embodiments, the energy barriers (ΔΦ1, ΔΦ2, and ΔΦ3) may independently be from about 0.10 eV to about 0.25 eV, and within this range, may be from about 0.15 eV to about 0.25 eV, from about 0.18 eV to about 0.25 eV, or from about 0.20 eV to about 0.25 eV.

[0240] The first auxiliary layer 40a and the second auxiliary layer 40b may each have the following thickness independently: less than or equal to about 10 nm, for example less than or equal to about 8 nm, less than or equal to about 7 nm, less than or equal to about 5 nm, or less than or equal to about 3 nm.

[0241] The first auxiliary layer 40a and the second auxiliary layer 40b may each comprise an organic material, an inorganic material, and / or an organic / inorganic material. In some example embodiments, at least one of the first auxiliary layer 40a and the second auxiliary layer 40b may comprise an organic material.

[0242] In some example embodiments, the first auxiliary layer 40a and the second auxiliary layer 40b may each comprise, within the range satisfying the above energy diagram,: substituted or unsubstituted arylamines; substituted or unsubstituted thiophenes, such as substituted or unsubstituted oligothiophenes and substituted or unsubstituted polythiophenes; substituted or unsubstituted phenylene vinylene, such as substituted or unsubstituted oligophenylene vinylene and substituted or unsubstituted polyphenylene vinylene; substituted or unsubstituted quinacridones; substituted or unsubstituted benzobenzenes; substituted or unsubstituted sulfonium-containing fused compounds; substituted or unsubstituted squaraine; oxides, such as metal oxides and half-metal oxides; or combinations thereof.

[0243] In some exemplary embodiments, the first auxiliary layer 40a and the second auxiliary layer 40b may each include, within the range satisfying the above energy diagram, 3,3'-bi[1,4]benzoxazin[2,3,4-kl]phenoxazine, Mes2B(p-4,4'-biphenyl-NPh(1-naphthyl), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], 4,4',4″-tris[phenyl(m-tolyl)amino]triphenylamine, N1,N1'-(biphenyl-4,4'-diyl)bis(N1-phenyl-N4,N4-di-m-tolylphenyl-1,4-diamine, 4,4',4″-tris[2-naphthyl(phenyl)amino]triphenylamine, N,N'-diphenyl -N,N'-Di-[4-(N,N-diphenyl-amino)phenyl]benzidine, 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene, 2,5-bis(4-biphenyl)thiophene, 2,5-bis(4-biphenyl)trithiophene, α-hexathiophene, ω,ω'-dihexyltrithiophene, ω,ω'-dioctyltrithiophene, poly[[4,8-bis[5-(2-ethylhexyl)-2-thiophene]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl]-2,5-thiophenediyl[5,7-bis(2-ethylhexyl)-4,8-dicarbonyl-4H,8H-benzo[1,2-c:4,5-c']dithiophene] Fen-1,3-diyl]], poly[(5,6-difluoro-2,1,3-benzozolyl-4,7-diyl)-alternating-(3,3″′-bis(2-octyldodecyl)-2,2',5',2″,5″,2″′-tetrathiophene-5,5″′-diyl)], poly(3-hexylthiophene-2,5-diyl), poly[2-methoxy-5-(2-ethylhexoxy)-1,4-phenylenevinylene], 4,4'-bis[4-(di-p-tolylamino)styryl]biphenyl, N,N'-dimethylquinacridone, 2,8-dimethylanthraphen[2,3-b:6,7-b']dithiophene, phenyl[b]anthracene, tetraphenyl, pentaphenyl, poly[[4,8-bis[5-( [2-Ethylhexyl)-2-thiophene]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl][2-(2-ethyl-1-oxohexyl)thiophene[3,4-b]thiophenediyl]], poly({4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl}{3-fluoro-2-[(2-ethylhexyl)carbonyl]thiophene[3,4-b]thiophenediyl}), 2,4-bis[4-(N,N-diisobutylamino)-2,6-dihydroxyphenyl]squamarine, 2,4-bis[4-(N,N-diphenylamino)-2,6-dihydroxyphenyl]squamarine, molybdenum trioxide, copper(I) oxide.

[0244] An electron buffer layer 50 may be disposed between the cathode 20 and the active layer 30 (e.g., between the second electrode and the active layer 30), and may transfer separated charge carriers (e.g., electrons) in the active layer 30 to the cathode 20. Here, the transport direction of the charge carriers (e.g., electrons) may be through the active layer 30, the electron buffer layer 50, and the cathode 20 in sequence. In some example embodiments, the electron buffer layer 50 may be in contact with the active layer 30. In some example embodiments, one surface of the electron buffer layer 50 may be in contact with the active layer 30, and the other surface of the electron buffer layer 50 may be in contact with the cathode 20.

[0245] In some example embodiments, the electron buffer layer 50 may include organic materials, inorganic materials, and / or organic / inorganic materials. In some example embodiments, the electron buffer layer 50 may be a very thin film of a few nanometers thickness, and in some example embodiments may have a thickness of less than or equal to about 8 nm, less than or equal to about 7 nm, less than or equal to about 5 nm, less than or equal to about 3 nm, or less than or equal to about 2 nm. In some example embodiments, the thickness of the electron buffer layer 50 may be about 1 nm to about 8 nm, about 1 nm to about 7 nm, about 1 nm to about 5 nm, about 1 nm to about 3 nm, or about 1 nm to about 2 nm.

[0246] In some example embodiments, the electron buffer layer 50 may comprise an inorganic material, and may comprise an inorganic material having a work function lower than that of the cathode 20. In some example embodiments, the work function of the electron buffer layer 50 may be about 0.5 eV or more lower than that of the cathode 20. In some example embodiments, the work function of the cathode 20 may be greater than or equal to about 4.5 eV, and the work function of the electron buffer layer 50 may be less than or equal to about 4.0 eV. In some example embodiments, the work function of the cathode 20 may be greater than or equal to about 4.5 eV, and the work function of the electron buffer layer 50 may be less than or equal to about 3.5 eV. In some example embodiments, the work function of the cathode 20 may be greater than or equal to about 4.5 eV, and the work function of the electron buffer layer 50 may be less than or equal to about 3.0 eV. In some example embodiments, the work function of the cathode 20 may be greater than or equal to about 4.5 eV, and the work function of the electron buffer layer 50 may be less than or equal to about 2.8 eV. In some example embodiments, the work function of the cathode 20 may be from about 4.5 eV to about 5.0 eV, and the work function of the electron buffer layer 50 may be from about 1.5 eV to about 4.0 eV, from about 1.5 eV to about 3.5 eV, from about 1.5 eV to about 3.0 eV, or from about 1.5 eV to about 2.8 eV.

[0247] The electron buffer layer 50 can be made of a material that can be formed by thermal evaporation and simultaneously satisfies the aforementioned work function (e.g., it can at least partially include a material that can be formed by thermal evaporation and simultaneously satisfies the aforementioned work function). In this way, the electron buffer layer 50 formed by thermal evaporation can prevent thermophysical damage to the active layer 30 during the formation of the electron buffer layer 50 and / or its subsequent processes, thus effectively preventing performance degradation of the device 100 and / or sensors, electronic devices, etc., including the device 100 due to the degradation of the active layer 30.

[0248] The inorganic material that can satisfy these properties and therefore may at least partially comprise the electron buffer layer 50 (including any layers included therein) may include, for example, lanthanides, calcium (Ca), potassium (K), aluminum (Al), or alloys thereof. Lanthanides may include, for example, ytterbium (Yb).

[0249] The electronic buffer layer 50 can be omitted.

[0250] Device 100 may further include an antireflective layer 90 on the anode 10 or the cathode 20. The antireflective layer 90 is disposed on the light incident side to further improve light absorption by reducing the reflectivity of incident light. In some example embodiments, when light is incident on the anode 10, the antireflective layer 90 may be disposed on (e.g., in contact with) a surface of the anode 10, and when light is incident on the cathode 20, the antireflective layer 90 may be disposed on (e.g., in contact with) a surface of the cathode 20.

[0251] The antireflective layer 90 may include, for example, a material having a refractive index of about 1.6 to about 2.5, and may include at least one of, for example, metal oxides, metal sulfides, and organic materials having a refractive index within this range. The antireflective layer 90 may include, for example: metal oxides, such as aluminum oxides, molybdenum oxides, tungsten oxides, vanadium oxides, rhenium oxides, niobium oxides, tantalum oxides, titanium oxides, nickel oxides, copper oxides, cobalt oxides, manganese oxides, chromium oxides, tellurium oxides, or combinations thereof; metal sulfides, such as zinc sulfides; or organic materials, such as amine derivatives, but not limited thereto.

[0252] Device 100 can be configured to generate excitons internally when light is incident from anode 10 or cathode 20, and active layer 30 is configured to absorb light of a specific (or alternatively, predetermined) wavelength spectrum. Excitons can be separated into holes and electrons in active layer 30; separated holes can be transported to anode 10 through first auxiliary layer 40a and second auxiliary layer 40b, while separated electrons can be transported to cathode 20 through electron buffer layer 50, thereby allowing current to flow.

[0253] Figure 3This is a cross-sectional view showing an optoelectronic device according to some example embodiments.

[0254] Reference Figure 3 , and including Figure 1-2 As with some of the example embodiments shown, the optoelectronic device 100A (hereinafter also referred to as device 100A) according to some example embodiments includes: an anode 10 and a cathode 20 facing each other; an active layer 30 between the anode 10 and the cathode 20; an auxiliary layer 40 between the anode 10 and the active layer 30; and an electron buffer layer 50 between the cathode 20 and the active layer 30. The anode 10, cathode 20, active layer 30, and electron buffer layer 50 are the same as described above.

[0255] However, in including Figure 3-4 In some example implementations of the illustrated embodiments, and including Figure 1-2 Some of the illustrated implementations differ from the examples in that, in addition to the first auxiliary layer 40a and the second auxiliary layer 40b, the auxiliary layer 40 (e.g., a plurality of auxiliary layers that at least partially constitute the auxiliary layer 40) also includes a third auxiliary layer 40c. The third auxiliary layer 40c may be located between the first auxiliary layer 40a and the second auxiliary layer 40b; for example, one surface of the third auxiliary layer 40c may contact the first auxiliary layer 40a, and the other surface of the third auxiliary layer 40c may contact the second auxiliary layer 40b.

[0256] The first auxiliary layer 40a, the third auxiliary layer 40c, and the second auxiliary layer 40b can have a structure that is stacked in sequence, such that the transport direction of the separated charge carriers (e.g., holes) in the active layer 30 can be the direction that passes through the active layer 30, the first auxiliary layer 40a, the third auxiliary layer 40c, the second auxiliary layer 40b, and the anode 10 in sequence.

[0257] Figure 4 It is shown Figure 3 The energy diagram of the energy levels of the anode 10, auxiliary layer 40 and active layer 30 in the optoelectronic device shown.

[0258] Reference Figure 4 In some example implementations, isolated holes in the active layer 30 can travel along the HOMO level (HOMO) of the active layer 30. 30 ), the HOMO level of the first auxiliary layer 40a (HOMO) 40a ), the HOMO level of the third auxiliary layer 40c (HOMO) 40c ), the HOMO level of the second auxiliary layer 40b (HOMO) 40b ) and the work function (WF) of anode 10 10 ) is transferred to anode 10.

[0259] Here, the HOMO level of active layer 30 (HOMO) 30 ), the HOMO level of the first auxiliary layer 40a (HOMO) 40a ), the HOMO level of the third auxiliary layer 40c (HOMO) 40c ), the HOMO level of the second auxiliary layer 40b (HOMO) 40b ) and the work function (WF) of anode 10 10 The active layer 30 can be progressively shallower; in some example implementations, the HOMO level of the active layer 30 (HOMO) 30 It can be the deepest, with the work function (WF) of anode 10. 10 It can be the shallowest, the first auxiliary layer 40a HOMO level (HOMO) 40a ), the HOMO level of the third auxiliary layer 40c (HOMO) 40c ) and the HOMO level of the second auxiliary layer 40b (HOMO 40b It can be found at the HOMO level in the active layer 30 (HOMO) 30 The work function (WF) of anode 10 10 Between ), as a result, the HOMO energy level (HOMO) of the first auxiliary layer 40a. 40a The size of ) can be in the HOMO level of the active layer 30 (HOMO) 30 The size of ) and the HOMO level of the third auxiliary layer 40c (HOMO) 40c Between the sizes of ) the HOMO level of the third auxiliary layer 40c (HOMO) 40c The size of ) can be in the HOMO level of the first auxiliary layer 40a (HOMO 40a The size of ) and the HOMO level of the second auxiliary layer 40b (HOMO) 40b Between the sizes of ), the HOMO level of the second auxiliary layer 40b (HOMO) 40b The size of ) can be found in the HOMO level at 40c in the third auxiliary layer (HOMO). 40c The magnitude of ) and the work function (WF) of anode 10 10 The size of the HOMO level in active layer 30 is between [a certain value]. In other words, the HOMO level in active layer 30 is [a certain value]. 30 ), the HOMO level of the first auxiliary layer 40a (HOMO) 40a ), the HOMO level of the third auxiliary layer 40c (HOMO) 40c ), the HOMO level of the second auxiliary layer 40b (HOMO) 40b ) and the work function (WF) of anode 10 10 It can have cascaded energy levels.

[0260] In some example implementations, the HOMO level of the active layer 30 (HOMO30 ), the HOMO level of the first auxiliary layer 40a (HOMO) 40a ), the HOMO level of the third auxiliary layer 40c (HOMO) 40c ), the HOMO level of the second auxiliary layer 40b (HOMO) 40b ) and the work function (WF) of anode 10 10 It can have a stepped shape.

[0261] In some example implementations, specific (or alternatively, predetermined) energy barriers may exist between adjacent layers. These energy barriers may include the energy barrier (ΔΦ1) between the active layer 30 and the first auxiliary layer 40a, the energy barrier (ΔΦ2) between the second auxiliary layer 40b and the anode 10, the energy barrier (ΔΦ4) between the third auxiliary layer 40c and the second auxiliary layer 40b, and the energy barrier (ΔΦ5) between the first auxiliary layer 40a and the third auxiliary layer 40c. The energy barrier (ΔΦ1) may be a HOMO level (HOMO energy level) of the active layer 30. 30 ) and the HOMO level of the first auxiliary layer 40a (HOMO 40a The difference between the two, the energy barrier (ΔΦ2) can be the HOMO level of the second auxiliary layer 40b (HOMO). 40b The work function (WF) of anode 10 10 The difference between the two values, the energy barrier (ΔΦ4) can be the HOMO level of the third auxiliary layer 40c (HOMO). 40c ) and the HOMO level of the second auxiliary layer 40b (HOMO 40b The difference between the two values, the energy barrier (ΔΦ5) can be the HOMO level of the first auxiliary layer 40a (HOMO). 40a ) and the HOMO level of the third auxiliary layer 40c (HOMO 40c The difference between ).

[0262] The energy barriers (ΔΦ1, ΔΦ2, ΔΦ4, ΔΦ5) between adjacent layers can have very small differences and / or be essentially equal.

[0263] In some example embodiments, the energy barrier (ΔΦ1) between the active layer 30 and the first auxiliary layer 40a, and the energy barrier (ΔΦ2) between the second auxiliary layer 40b and the anode 10, may have very small differences and / or be substantially equal. In some example embodiments, the energy diagrams of the active layer 30, the first auxiliary layer 40a, the second auxiliary layer 40b, and the anode 10 may satisfy relation 1.

[0264] In some example embodiments, the energy barrier (ΔΦ2) between the second auxiliary layer 40b and the anode 10, and the energy barrier (ΔΦ4) between the third auxiliary layer 40c and the second auxiliary layer 40b, can have very small differences and / or be substantially equal. In some example embodiments, the energy diagrams of the third auxiliary layer 40c, the second auxiliary layer 40b, and the anode 10 can satisfy relation 4.

[0265] [Relationship 4]

[0266] |ΔΦ2-ΔΦ4|≤0.1eV

[0267] In some example embodiments, the energy barrier (ΔΦ1) between the active layer 30 and the first auxiliary layer 40a, and the energy barrier (ΔΦ5) between the first auxiliary layer 40a and the third auxiliary layer 40c, may have small differences and / or be substantially equal. In some example embodiments, the energy diagrams of the active layer 30, the first auxiliary layer 40a, and the third auxiliary layer 40c may satisfy relation 5.

[0268] [Relation 5]

[0269] |ΔΦ1-ΔΦ5|≤0.1eV

[0270] In some example embodiments, the energy barrier (ΔΦ4) between the second auxiliary layer 40b and the third auxiliary layer 40c, and the energy barrier (ΔΦ5) between the first auxiliary layer 40a and the third auxiliary layer 40c, may have very small differences and / or be substantially equal. In some example embodiments, the energy diagrams of the first auxiliary layer 40a, the third auxiliary layer 40c, and the second auxiliary layer 40b may satisfy relation 6.

[0271] [Relationship 6]

[0272] |ΔΦ4-ΔΦ5|≤0.1eV

[0273] In some example embodiments, the energy barriers (ΔΦ1) between the active layer 30 and the first auxiliary layer 40a, (ΔΦ2) between the second auxiliary layer 40b and the anode 10, (ΔΦ4) between the third auxiliary layer 40c and the second auxiliary layer 40b, and (ΔΦ5) between the first auxiliary layer 40a and the third auxiliary layer 40c can have very small differences and / or be substantially equal. In some example embodiments, the energy diagrams of the active layer 30, the first auxiliary layer 40a, the third auxiliary layer 40c, the second auxiliary layer 40b, and the anode 10 can simultaneously satisfy relations 4, 5, and 6.

[0274] Based on the active layer 30, the first auxiliary layer 40a, the third auxiliary layer 40c, the second auxiliary layer 40b, and the anode 10 satisfying one or more of Equations 4, 5, and 6, the energy barriers (ΔΦ1, ΔΦ2, ΔΦ4, ΔΦ5) between the active layer 30, the first auxiliary layer 40a, the third auxiliary layer 40c, the second auxiliary layer 40b, and the anode 10 satisfy one or more of Equations 4, 5, and 6. Therefore, hole transport delay at the layer interfaces in the hole transport path can be prevented, resulting in high charge extraction efficiency. Furthermore, undesirable charge carriers remaining at the interfaces between adjacent layers can be reduced or prevented, thereby reducing or preventing image retention due to accumulated residual charge carriers. Therefore, the electrical performance of device 100A and / or sensors, electronic devices, etc., including device 100A can be improved.

[0275] Within this range, the energy diagrams of the active layer 30, the first auxiliary layer 40a, the third auxiliary layer 40c, the second auxiliary layer 40b, and the anode 10 can satisfy relation 4A, relation 5A, and / or relation 6A.

[0276] [Relation 4A]

[0277] 0 < |ΔΦ2 - ΔΦ4| ≤ 0.1eV

[0278] [Relationship 5A]

[0279] 0 < |ΔΦ1 - ΔΦ5| ≤ 0.1eV

[0280] [Relation 6A]

[0281] 0 < |ΔΦ4 - ΔΦ5| ≤ 0.1 eV

[0282] Within this range, the energy diagrams of the active layer 30, the first auxiliary layer 40a, the third auxiliary layer 40c, the second auxiliary layer 40b, and the anode 10 can satisfy relation 4B, relation 5B, and / or relation 6B.

[0283] [Relation 4B]

[0284] |ΔΦ2-ΔΦ4|≤0.07eV

[0285] [Relation 5B]

[0286] |ΔΦ1-ΔΦ5|≤0.07eV

[0287] [Relation 6B]

[0288] |ΔΦ4-ΔΦ5|≤0.07eV

[0289] Within this range, the energy diagrams of the active layer 30, the first auxiliary layer 40a, the third auxiliary layer 40c, the second auxiliary layer 40b, and the anode 10 can satisfy relation 4C, relation 5C, and / or relation 6C.

[0290] [Relationship 4C]

[0291] 0 < |ΔΦ2 - ΔΦ4| ≤ 0.07 eV

[0292] [Relationship 5C]

[0293] 0 < |ΔΦ1 - ΔΦ5| ≤ 0.07 eV

[0294] [Relationship 6C]

[0295] 0 < |ΔΦ4 - ΔΦ5| ≤ 0.07 eV

[0296] Within this range, the energy diagrams of the active layer 30, the first auxiliary layer 40a, the third auxiliary layer 40c, the second auxiliary layer 40b, and the anode 10 can satisfy relation 4D, relation 5D, and / or relation 6D.

[0297] [Relational 4D]

[0298] |ΔΦ2-ΔΦ4|≤0.05eV

[0299] [Relational 5D]

[0300] |ΔΦ1-ΔΦ5|≤0.05eV

[0301] [Relational 6D]

[0302] |ΔΦ4-ΔΦ5|≤0.05eV

[0303] Within this range, the energy diagrams of the active layer 30, the first auxiliary layer 40a, the third auxiliary layer 40c, the second auxiliary layer 40b, and the anode 10 can satisfy relation 4E, relation 5E, and / or relation 6E.

[0304] [Relational Formula 4E]

[0305] 0 < |ΔΦ2 - ΔΦ4| ≤ 0.05 eV

[0306] [Relation 5E]

[0307] 0 < |ΔΦ1 - ΔΦ5| ≤ 0.05 eV

[0308] [Relation 6E]

[0309] 0 < |ΔΦ4 - ΔΦ5| ≤ 0.05 eV

[0310] Within this range, the energy diagrams of the active layer 30, the first auxiliary layer 40a, the third auxiliary layer 40c, the second auxiliary layer 40b, and the anode 10 can satisfy relation 4F, relation 5F, and / or relation 6F.

[0311] [Relationship 4F]

[0312] |ΔΦ2-ΔΦ4|≤0.03eV

[0313] [Relationship 5F]

[0314] |ΔΦ1-ΔΦ5|≤0.03eV

[0315] [Relationship 6F]

[0316] |ΔΦ4-ΔΦ5|≤0.03eV

[0317] Within this range, the energy diagrams of the active layer 30, the first auxiliary layer 40a, the third auxiliary layer 40c, the second auxiliary layer 40b, and the anode 10 can satisfy relation 4G, relation 5G, and / or relation 6G.

[0318] [Relational 4G]

[0319] 0 < |ΔΦ2 - ΔΦ4| ≤ 0.03 eV

[0320] [Relational 5G]

[0321] 0 < |ΔΦ1 - ΔΦ5| ≤ 0.03 eV

[0322] [Relational 6G]

[0323] 0 < |ΔΦ4 - ΔΦ5| ≤ 0.03 eV

[0324] Within this range, the energy diagrams of the active layer 30, the first auxiliary layer 40a, the third auxiliary layer 40c, the second auxiliary layer 40b, and the anode 10 can satisfy relation 4H, relation 5H, and / or relation 6H.

[0325] [Relation 4H]

[0326] |ΔΦ2-ΔΦ4|≤0.01eV

[0327] [Relation 5H]

[0328] |ΔΦ1-ΔΦ5|≤0.01eV

[0329] [Relation 6H]

[0330] |ΔΦ4-ΔΦ5|≤0.01eV

[0331] Within this range, the energy diagrams of the active layer 30, the first auxiliary layer 40a, the third auxiliary layer 40c, the second auxiliary layer 40b, and the anode 10 can satisfy relation 4I, relation 5I, and / or relation 6I.

[0332] [Relation 4I]

[0333] 0 < |ΔΦ2 - ΔΦ4| ≤ 0.01 eV

[0334] [Relation 5I]

[0335] 0 < |ΔΦ1 - ΔΦ5| ≤ 0.01 eV

[0336] [Relation 6I]

[0337] 0 < |ΔΦ4 - ΔΦ5| ≤ 0.01 eV

[0338] In some example embodiments, the energy barriers (ΔΦ1, ΔΦ2, ΔΦ4, ΔΦ5) may each (e.g., individually) be less than or equal to about 0.5 eV, and within that range, be less than or equal to about 0.4 eV, less than or equal to about 0.3 eV, or less than or equal to about 0.25 eV. In some example embodiments, the energy barriers (ΔΦ1, ΔΦ2, ΔΦ4, ΔΦ5) may independently be from about 0.10 eV to about 0.25 eV, and within that range, be from about 0.15 eV to about 0.25 eV, from about 0.18 eV to about 0.25 eV, or from about 0.20 eV to about 0.25 eV.

[0339] The first auxiliary layer 40a, the second auxiliary layer 40b, and the third auxiliary layer 40c may independently have the following thicknesses: less than or equal to about 10 nm, for example, less than or equal to about 8 nm, less than or equal to about 7 nm, less than or equal to about 5 nm, or less than or equal to about 3 nm.

[0340] The first auxiliary layer 40a, the second auxiliary layer 40b, and the third auxiliary layer 40c may each comprise an organic material, an inorganic material, and / or an organic / inorganic material. In some example embodiments, at least one of the first auxiliary layer 40a, the second auxiliary layer 40b, and the third auxiliary layer 40c may comprise an organic material. In some example embodiments, the first auxiliary layer 40a, the second auxiliary layer 40b, and the third auxiliary layer 40c may each comprise an organic material.

[0341] Figure 5 This is a cross-sectional view showing an optoelectronic device according to some example embodiments.

[0342] Reference Figure 5 , and including Figure 1-2Similar to some of the example embodiments shown, the optoelectronic device 100B (hereinafter also referred to as device 100B) includes: an anode 10 and a cathode 20 facing each other; an active layer 30 between the anode 10 and the cathode 20; an auxiliary layer 40 between the anode 10 and the active layer 30 and including a first auxiliary layer 40a and a second auxiliary layer 40b; and an electron buffer layer 50 between the cathode 20 and the active layer 30. The anode 10, cathode 20, active layer 30, and auxiliary layer 40 are the same as those described above. Figure 1-2 The descriptions are the same.

[0343] However, in including Figure 5-6 In some example implementations of the illustrated embodiments, and including Figure 1-2 The illustrated example embodiments differ in some cases, where the electron buffer layer 50 includes a first electron buffer layer 50a and a second electron buffer layer 50b. The first electron buffer layer 50a may be positioned closest to the active layer 30, such that it can be understood as being close to the active layer 30 relative to the second electron buffer layer 50b and / or between the active layer 30 and the second electron buffer layer 50b, and in some example embodiments, it may be in contact with the active layer 30. The second electron buffer layer 50b may be positioned closest to the cathode 20, such that it can be understood as being close to the cathode 20 relative to the first electron buffer layer 50a and / or between the cathode 20 and the first electron buffer layer 50a, and in some example embodiments, it may be in contact with the cathode 20.

[0344] Figure 6 It is shown Figure 5 Energy diagram of the energy levels of components in optoelectronic devices.

[0345] Separated holes in the active layer 30 can be transported to the anode 10 along the HOMO level. In some example embodiments, holes can travel along the HOMO level (HOMO) of the active layer 30. 30 ), the HOMO level of the first auxiliary layer 40a (HOMO) 40a ), the HOMO level of the second auxiliary layer 40b (HOMO) 40b ) and the work function (WF) of anode 10 10 Transmission. See above for details. Figure 2 The description is the same.

[0346] Separated electrons in the active layer 30 can be transported to the cathode 20 along the LUMO level. In some example embodiments, electrons can travel along the LUMO level (LUMO) of the active layer 30. 30 ), the LUMO level of the first electron buffer layer 50a (LUMO 50a), the LUMO level of the second electron buffer layer 50b (LUMO 50b ) and the work function (WF) of cathode 20 20 ) transmission. In some example implementations, the LUMO level (LUMO) of the active layer 30 30 ), the LUMO level of the first electron buffer layer 50a (LUMO 50a ), the LUMO level of the second electron buffer layer 50b (LUMO 50b ) and the work function (WF) of cathode 20 20 The active layer 30 can have a stepped shape, such that in some example implementations, the LUMO level (LUMO) of the active layer 30... 30 ), the LUMO level of the first electron buffer layer 50a (LUMO 50a ), the LUMO level of the second electron buffer layer 50b (LUMO 50b ) and the work function (WF) of cathode 20 20 The depth can be increased sequentially, allowing the LUMO level (LUMO) of the first electron buffer layer 50a to be... 50a The size of ) is at the LUMO level of the active layer 30 (LUMO 30 The size of ) is related to the LUMO level of the second electron buffer layer 50b (LUMO). 50b Between the sizes of ), the LUMO level (LUMO) of the second electron buffer layer 50b 50b The size of the LUMO level in the first electron buffer layer 50a (LUMO) 50a The magnitude of ) and the work function (WF) of cathode 20 20 Between the sizes of ).

[0347] Specific (or alternatively, predetermined) energy barriers may exist between adjacent layers. These energy barriers may include the energy barrier (ΔΦ6) between the active layer 30 and the first electron buffer layer 50a, the energy barrier (ΔΦ7) between the second electron buffer layer 50b and the cathode 20, and the energy barrier (ΔΦ8) between the first electron buffer layer 50a and the second electron buffer layer 50b. The energy barrier (ΔΦ6) may be the LUMO level (LUMO energy level) of the active layer 30. 30 ) and the LUMO level of the first electron buffer layer 50a (LUMO 50a The difference between the two, the energy barrier (ΔΦ7) can be the LUMO level (LUMO) of the second electron buffer layer 50b. 50b ) and the work function (WF) of cathode 20 20 The difference between the two values, the energy barrier (ΔΦ8) can be the LUMO level of the first electron buffer layer 50a (LUMO). 50a ) and the LUMO level of the second electron buffer layer 50b (LUMO50b The difference between ).

[0348] The energy barriers (ΔΦ6, ΔΦ7 and ΔΦ8) between adjacent layers can have small differences and / or be essentially equal.

[0349] In some example embodiments, the energy barrier (ΔΦ6) between the active layer 30 and the first electron buffer layer 50a, and the energy barrier (ΔΦ7) between the second electron buffer layer 50b and the cathode 20, may have very small differences and / or be substantially equal. In some example embodiments, the energy diagrams of the active layer 30, the first electron buffer layer 50a, the second electron buffer layer 50b, and the cathode 20 may satisfy relation 7.

[0350] [Relation 7]

[0351] |ΔΦ6-ΔΦ7|≤0.1eV

[0352] In some example embodiments, the energy barrier (ΔΦ6) between the active layer 30 and the first electron buffer layer 50a, and the energy barrier (ΔΦ8) between the first electron buffer layer 50a and the second electron buffer layer 50b, may have very small differences and / or be substantially equal. In some example embodiments, the energy diagrams of the active layer 30, the first electron buffer layer 50a, and the second electron buffer layer 50b may satisfy relation 8.

[0353] [Relation 8]

[0354] |ΔΦ6-ΔΦ8|≤0.1eV

[0355] In some example embodiments, the energy barrier (ΔΦ8) between the first electron buffer layer 50a and the second electron buffer layer 50b, and the energy barrier (ΔΦ7) between the second electron buffer layer 50b and the cathode 20, may have small differences and / or be substantially equal. In some example embodiments, the energy diagrams of the first electron buffer layer 50a, the second electron buffer layer 50b, and the cathode 20 may satisfy relation 9.

[0356] [Relation 9]

[0357] |ΔΦ7-ΔΦ8|≤0.1eV

[0358] In some example embodiments, the energy barriers (ΔΦ6) between the active layer 30 and the first electron buffer layer 50a, the energy barrier (ΔΦ7) between the second electron buffer layer 50b and the cathode 20, and the energy barrier (ΔΦ8) between the first electron buffer layer 50a and the second electron buffer layer 50b may have small differences and / or be substantially equal. In some example embodiments, the energy diagrams of the active layer 30, the first electron buffer layer 50a, the second electron buffer layer 50b, and the cathode 20 may simultaneously satisfy relations 7, 8, and 9.

[0359] Based on the anode 10, the first and second auxiliary layers 40a and 40b, the active layer 30, the first and second electron buffer layers 50a and 50b, and the cathode 20 satisfying one or more of Equations 1, 2, 3, 7, 8, and 9, the energy barriers (ΔΦ1, ΔΦ2, and ΔΦ3) between the anode 10, the first and second auxiliary layers 40a and 40b, and the active layer 30, and the energy barriers (ΔΦ6, ΔΦ7, and ΔΦ8) between the active layer 30, the first and second electron buffer layers 50a and 50b, and the cathode 20 can satisfy one or more of Equations 1, 2, 3, 7, 8, and 9. Therefore, hole transport delay at the layer interfaces in the hole transport path can be prevented, and electron transport delay at the layer interfaces in the electron transport path can also be prevented, thus exhibiting a much higher charge extraction efficiency. Furthermore, the unwanted retention of charge carriers at the interface between adjacent layers can be reduced or prevented, thereby further reducing or preventing image retention due to accumulated residual charge carriers. Therefore, the electrical performance of device 100B and / or sensors, electronic devices, etc., including device 100B can be further improved.

[0360] In some example embodiments, the energy barriers (ΔΦ1, ΔΦ2, ΔΦ3, ΔΦ6, ΔΦ7, ΔΦ8) may each (e.g., individually) be less than or equal to about 0.5 eV, and within that range, be less than or equal to about 0.4 eV, less than or equal to about 0.3 eV, or less than or equal to about 0.25 eV. In some example embodiments, the energy barriers (ΔΦ1, ΔΦ2, ΔΦ3, ΔΦ6, ΔΦ7, ΔΦ8) may independently be from about 0.10 eV to about 0.25 eV, and within that range, be from about 0.15 eV to about 0.25 eV, from about 0.18 eV to about 0.25 eV, or from about 0.20 eV to about 0.25 eV.

[0361] The first electron buffer layer 50a and the second electron buffer layer 50b may each have the following thickness independently: less than or equal to about 10 nm, for example less than or equal to about 8 nm, less than or equal to about 7 nm, less than or equal to about 5 nm, or less than or equal to about 3 nm.

[0362] The first electron buffer layer 50a and the second electron buffer layer 50b may respectively comprise organic materials, inorganic materials, and / or organic / inorganic materials. In some example embodiments, at least one of the first electron buffer layer 50a and the second electron buffer layer 50b may comprise an organic material. In some example embodiments, the first electron buffer layer 50a and the second electron buffer layer 50b may each comprise an organic material.

[0363] Figure 7 This is a cross-sectional view showing an optoelectronic device according to some example embodiments.

[0364] Reference Figure 7 The optoelectronic device 100C (hereinafter also referred to as device 100C) includes an anode 10, a cathode 20, an active layer 30, an auxiliary layer 60, and a hole buffer layer 70.

[0365] The anode 10, cathode 20, and active layer 30 are the same as described above.

[0366] The auxiliary layer 60 may be an electronic auxiliary layer between the cathode 20 and the active layer 30, and in some example embodiments, this electronic auxiliary layer may include an electron transport layer, an electron injection layer, and / or a hole blocking layer. The auxiliary layer 60 can serve as a channel for transporting separated charge carriers (e.g., electrons) from the active layer 30 to the cathode 20. Here, the transport direction of the charge carriers (e.g., electrons) may be a direction that passes sequentially through the active layer 30, the auxiliary layer 60, and the cathode 20.

[0367] The auxiliary layer 60 includes multiple layers, including a first auxiliary layer 60a and a second auxiliary layer 60b. The first auxiliary layer 60a may be closest to the active layer 30 and may contact the active layer 30 in some example embodiments. The second auxiliary layer 60b may be closest to the cathode 20 and may contact the cathode 20 in some example embodiments.

[0368] Figure 8 It is shown Figure 7 The energy diagram of the energy levels of the cathode 20, auxiliary layer 60 and active layer 30 in the optoelectronic device shown.

[0369] Reference Figure 8 Separated electrons in the active layer 30 can be transported along the LUMO level to the cathode 20. In some example embodiments, along the LUMO level (LUMO) of the active layer 30... 30 ), the LUMO level of the first auxiliary layer 60a (LUMO 60a ), the LUMO level of the second auxiliary layer 60b (LUMO 60b ) and the work function (WF) of cathode 20 20) is transmitted to cathode 20.

[0370] Here, the LUMO level of the active layer 30 (LUMO 30 ), the LUMO level of the first auxiliary layer 60a (LUMO 60a ), the LUMO level of the second auxiliary layer 60b (LUMO 60b ) and the work function (WF) of cathode 20 20 The energy level can be progressively deeper from the vacuum level. In some example implementations, the LUMO level of the active layer 30 (LUMO) 30 The work function (WF) of the cathode 20 can be the shallowest. 20 It could be the deepest, the first auxiliary layer 60a LUMO level (LUMO 60a ) and the LUMO level of the second auxiliary layer 60b (LUMO 60b It can be found at the LUMO level in the active layer 30 (LUMO) 30 ) and the work function (WF) of cathode 20 20 Between ), the LUMO level (LUMO) of the first auxiliary layer 60a. 60a The size of ) can be found in the LUMO level of the active layer 30 (LUMO 30 The size of ) and the LUMO level of the second auxiliary layer 60b (LUMO 60b Between the sizes of ), the LUMO level of the second auxiliary layer 60b (LUMO) 60b The size of ) can be at the LUMO level of the first auxiliary layer 60a (LUMO 60a The magnitude of ) and the work function (WF) of cathode 20 20 The size of the LUMO level in active layer 30 is between [a certain value]. In other words, the LUMO level in active layer 30 [is between a certain value]. 30 ), the LUMO level of the first auxiliary layer 60a (LUMO 60a ), the LUMO level of the second auxiliary layer 60b (LUMO 60b ) and the work function (WF) of cathode 20 20 It can have cascaded energy levels.

[0371] In some example implementations, the LUMO level of the active layer 30 (LUMO 30 ), the LUMO level of the first auxiliary layer 60a (LUMO 60a ), the LUMO level of the second auxiliary layer 60b (LUMO 60b ) and the work function (WF) of cathode 20 20 It can have a stepped shape.

[0372] Specific (or alternatively, predetermined) energy barriers may exist between adjacent layers. These energy barriers may include the energy barrier (ΔΦ1) between the active layer 30 and the first auxiliary layer 60a, the energy barrier (ΔΦ2) between the second auxiliary layer 60b and the cathode 20, and the energy barrier (ΔΦ3) between the first auxiliary layer 60a and the second auxiliary layer 60b. The energy barrier (ΔΦ1) may be the LUMO level (LUMO energy level) of the active layer 30. 30 ) and the LUMO level of the first auxiliary layer 60a (LUMO 60a The difference between the two, the energy barrier (ΔΦ2) can be the LUMO level (LUMO) of the second auxiliary layer 60b. 60b ) and the work function (WF) of cathode 20 20 The difference between the energy barrier (ΔΦ3) and the energy barrier (ΔΦ3) can be the LUMO level of the first auxiliary layer 60a. 60a ) and the LUMO level of the second auxiliary layer 60b (LUMO 60b The difference between ).

[0373] The energy barriers (ΔΦ1, ΔΦ2 and ΔΦ3) between adjacent layers can have small differences and / or be essentially equal.

[0374] In some example embodiments, the energy barrier (ΔΦ1) between the active layer 30 and the first auxiliary layer 60a, and the energy barrier (ΔΦ2) between the second auxiliary layer 60b and the cathode 20, may have very small differences and / or be substantially equal. In some example embodiments, the energy diagrams of the active layer 30, the first auxiliary layer 60a, the second auxiliary layer 60b, and the cathode 20 may satisfy relation 1.

[0375] [Relation 1]

[0376] |ΔΦ1-ΔΦ2|≤0.1eV

[0377] In some example embodiments, the energy barrier (ΔΦ1) between the active layer 30 and the first auxiliary layer 60a, and the energy barrier (ΔΦ3) between the first auxiliary layer 60a and the second auxiliary layer 60b, may have small differences and / or be substantially equal. In some example embodiments, the energy diagrams of the active layer 30, the first auxiliary layer 60a, and the second auxiliary layer 60b may satisfy relation 2.

[0378] [Relationship 2]

[0379] |ΔΦ1-ΔΦ3|≤0.1eV

[0380] In some example embodiments, the energy barrier (ΔΦ3) between the first auxiliary layer 60a and the second auxiliary layer 60b, and the energy barrier (ΔΦ2) between the second auxiliary layer 60b and the cathode 20, may have small differences and / or be substantially equal. In some example embodiments, the energy diagrams of the first auxiliary layer 60a, the second auxiliary layer 60b, and the cathode 20 may satisfy relation 3.

[0381] [Relationship 3]

[0382] |ΔΦ3-ΔΦ2|≤0.1eV

[0383] In some example embodiments, the energy barriers (ΔΦ1) between the active layer 30 and the first auxiliary layer 60a, the energy barrier (ΔΦ2) between the second auxiliary layer 60b and the cathode 20, and the energy barrier (ΔΦ3) between the first auxiliary layer 60a and the second auxiliary layer 60b may have small differences and / or be substantially equal. In some example embodiments, the energy diagrams of the active layer 30, the first auxiliary layer 60a, the second auxiliary layer 60b, and the cathode 20 may simultaneously satisfy Equations 1, 2, and 3.

[0384] Based on the active layer 30, the first auxiliary layer 60a, the second auxiliary layer 60b, and the cathode 20 satisfying one or more of Equations 1, 2, and 3, the energy barriers (ΔΦ1, ΔΦ2, and ΔΦ3) between the active layer 30, the first auxiliary layer 60a, the second auxiliary layer 60b, and the cathode 20 can satisfy one or more of Equations 1, 2, and 3, thus preventing electron transport delay at the layer interfaces in the electron transport path, thereby exhibiting high charge extraction efficiency. Furthermore, the unwanted retention of charge carriers at the interfaces between adjacent layers can be reduced or prevented, thereby reducing or preventing image retention due to accumulated residual charge carriers. Therefore, the electrical performance of device 100C and / or sensors, electronic devices, etc., including device 100C can be improved.

[0385] Within this range, the energy diagrams of the active layer 30, the first auxiliary layer 60a, the second auxiliary layer 60b, and the cathode 20 can satisfy relation 1A, relation 2A, and / or relation 3A.

[0386] [Relation 1A]

[0387] 0 < |ΔΦ1 - ΔΦ2| ≤ 0.1 eV

[0388] [Relation 2A]

[0389] 0 < |ΔΦ1 - ΔΦ3| ≤ 0.1 eV

[0390] [Relationship 3A]

[0391] 0 < |ΔΦ3 - ΔΦ2| ≤ 0.1 eV

[0392] Within this range, the energy diagrams of the active layer 30, the first auxiliary layer 60a, the second auxiliary layer 60b, and the cathode 20 can satisfy relation 1B, relation 2B, and / or relation 3B.

[0393] [Relation 1B]

[0394] |ΔΦ1-ΔΦ2|≤0.07eV

[0395] [Relation 2B]

[0396] |ΔΦ1-ΔΦ3|≤0.07eV

[0397] [Relation 3B]

[0398] |ΔΦ3-ΔΦ2|≤0.07eV

[0399] Within this range, the energy diagrams of the active layer 30, the first auxiliary layer 60a, the second auxiliary layer 60b, and the cathode 20 can satisfy relation 1C, relation 2C, and / or relation 3C.

[0400] [Relation 1C]

[0401] 0 < |ΔΦ1 - ΔΦ2| ≤ 0.07 eV

[0402] [Relation 2C]

[0403] 0 < |ΔΦ1 - ΔΦ3| ≤ 0.07 eV

[0404] [Relational Formula 3C]

[0405] 0 < |ΔΦ3 - ΔΦ2| ≤ 0.07 eV

[0406] Within this range, the energy diagrams of the active layer 30, the first auxiliary layer 60a, the second auxiliary layer 60b, and the cathode 20 can satisfy relation 1D, relation 2D, and / or relation 3D.

[0407] [Relational 1D]

[0408] |ΔΦ1-ΔΦ2|≤0.05eV

[0409] [Relational 2D]

[0410] |ΔΦ1-ΔΦ3|≤0.05eV

[0411] [Relational 3D]

[0412] |ΔΦ3-ΔΦ2|≤0.05eV

[0413] Within this range, the energy diagrams of the active layer 30, the first auxiliary layer 60a, the second auxiliary layer 60b, and the cathode 20 can satisfy relation 1E, relation 2E, and / or relation 3E.

[0414] [Relation 1E]

[0415] 0 < |ΔΦ1 - ΔΦ2| ≤ 0.05 eV

[0416] [Relation 2E]

[0417] 0 < |ΔΦ1 - ΔΦ3| ≤ 0.05 eV

[0418] [Relationship 3E]

[0419] 0 < |ΔΦ3 - ΔΦ2| ≤ 0.05 eV

[0420] Within this range, the energy diagrams of the active layer 30, the first auxiliary layer 60a, the second auxiliary layer 60b, and the cathode 20 can satisfy relation 1F, relation 2F, and / or relation 3F.

[0421] [Relation 1F]

[0422] |ΔΦ1-ΔΦ2|≤0.03eV

[0423] [Relation 2F]

[0424] |ΔΦ1-ΔΦ3|≤0.03eV

[0425] [Relationship 3F]

[0426] |ΔΦ3-ΔΦ2|≤0.03eV

[0427] Within this range, the energy diagrams of the active layer 30, the first auxiliary layer 60a, the second auxiliary layer 60b, and the cathode 20 can satisfy relation 1G, relation 2G, and / or relation 3G.

[0428] [Relational Formula 1G]

[0429] 0 < |ΔΦ1 - ΔΦ2| ≤ 0.03 eV

[0430] [Relational 2G]

[0431] 0 < |ΔΦ1 - ΔΦ3| ≤ 0.03 eV

[0432] [Relational 3G]

[0433] 0 < |ΔΦ3 - ΔΦ2| ≤ 0.03 eV

[0434] Within this range, the energy diagrams of the active layer 30, the first auxiliary layer 60a, the second auxiliary layer 60b, and the cathode 20 can satisfy relation 1H, relation 2H, and / or relation 3H.

[0435] [Relation 1H]

[0436] |ΔΦ1-ΔΦ2|≤0.01eV

[0437] [Relation 2H]

[0438] |ΔΦ1-ΔΦ3|≤0.01eV

[0439] [Relation 3H]

[0440] |ΔΦ3-ΔΦ2|≤0.01eV

[0441] Within this range, the energy diagrams of the active layer 30, the first auxiliary layer 60a, the second auxiliary layer 60b, and the cathode 20 can satisfy relation 1I, relation 2I, and / or relation 3I.

[0442] [Relation 1I]

[0443] 0 < |ΔΦ1 - ΔΦ2| ≤ 0.01 eV

[0444] [Relation 2I]

[0445] 0 < |ΔΦ1 - ΔΦ3| ≤ 0.01 eV

[0446] [Relation 3I]

[0447] 0 < |ΔΦ3 - ΔΦ2| ≤ 0.01 eV

[0448] In some example embodiments, the energy barriers (ΔΦ1, ΔΦ2, and ΔΦ3) may each be less than or equal to about 0.5 eV, and within that range, less than or equal to about 0.4 eV, less than or equal to about 0.3 eV, or less than or equal to about 0.25 eV. In some example embodiments, the energy barriers (ΔΦ1, ΔΦ2, and ΔΦ3) may independently be from about 0.10 eV to about 0.25 eV, and within that range, from about 0.15 eV to about 0.25 eV, from about 0.18 eV to about 0.25 eV, or from about 0.20 eV to about 0.25 eV.

[0449] The first auxiliary layer 60a and the second auxiliary layer 60b may each have a thickness of less than or equal to about 10 nm, for example, less than or equal to about 8 nm, less than or equal to about 7 nm, less than or equal to about 5 nm, or less than or equal to about 3 nm.

[0450] The first auxiliary layer 60a and the second auxiliary layer 60b may respectively comprise organic materials, inorganic materials, and / or organic / inorganic materials. In some example embodiments, at least one of the first auxiliary layer 60a and the second auxiliary layer 60b may comprise an organic material. In some example embodiments, the first auxiliary layer 60a and the second auxiliary layer 60b may each comprise an organic material.

[0451] A hole buffer layer 70 is located between the anode 10 and the active layer 30, and can transport separated charge carriers (e.g., holes) from the active layer 30 to the anode 10. Here, the transport direction of the charge carriers (e.g., holes) can be sequentially through the active layer 30, the hole buffer layer 70, and the anode 10. In some example embodiments, the hole buffer layer 70 may be in contact with the active layer 30. In some example embodiments, one surface of the hole buffer layer 70 may be in contact with the active layer 30, and the other surface of the hole buffer layer 70 may be in contact with the anode 10.

[0452] The hole buffer layer 70 can be a very thin film of a few nanometers thickness, and in some example embodiments it can have a thickness of less than or equal to about 8 nm, less than or equal to about 7 nm, or less than or equal to about 5 nm. In some example embodiments, the hole buffer layer 70 can have a thickness of about 1 nm to about 8 nm, about 1 nm to about 7 nm, or about 1 nm to about 5 nm.

[0453] In some example implementations, the hole buffer layer 70 may include organic materials, inorganic materials, and / or organic / inorganic materials.

[0454] In some example implementations, the hole buffer layer 70 may include organic materials.

[0455] In some example implementations, the hole buffer layer 70 may include, but is not limited to, a compound represented by chemical formula 4A or chemical formula 4B.

[0456] [Chemical Formula 4A]

[0457]

[0458] [Chemical Formula 4B]

[0459]

[0460] In chemical formula 4A or chemical formula 4B

[0461] M 1 and M 2 Independently, it is CR n R o SiR p R q NRr ,O,S,Se or Te,

[0462] Ar 1b Ar 2b Ar 3b and Ar 4b Independently, it is a substituted or unsubstituted C6 to C30 aryl group, or a substituted or unsubstituted C3 to C30 heteroaryl group.

[0463] G 2 and G 3 Independently, it is a single bond, -(CR) s R t ) n3 -, -O-, -S-, -Se-, -N=, -NR u -、-SiR v R w -or-GeR x R y -, where n3 is 1 or 2, and

[0464] R 30 To R 37 and R n To R y Independently, it is hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heterocyclic group, a substituted or unsubstituted C1 to C6 alkoxy group, a halogen, or a cyano group.

[0465] In some example embodiments, the hole buffer layer 70 may be a compound represented by chemical formula 4A-1 or chemical formula 4B-1, but is not limited thereto.

[0466] [Chemical Formula 4A-1]

[0467]

[0468] [Chemical Formula 4B-1]

[0469]

[0470] In chemical formula 4A-1 or chemical formula 4B-1,

[0471] M 1 M 2 G 2 G 3 and R 30 To R 37 Same as above, and

[0472] R 38 To R 45Independently, it is hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a substituted or unsubstituted C1 to C6 alkoxy group, a halogen, or a cyano group.

[0473] In some example embodiments, the hole buffer layer 70 may be a compound represented by chemical formula 4A-1a or chemical formula 4B-1a, but is not limited thereto.

[0474] [Chemical Formula 4A-1a]

[0475]

[0476] [Chemical Formula 4B-1a]

[0477]

[0478] In chemical formula 4A-1a or chemical formula 4B-1a, R 38 To R 45 R o and R n Same as above.

[0479] exist Figure 7 In this embodiment, the hole buffer layer 70 is shown as a single layer, but is not limited thereto, and includes at least two layers. In some example embodiments, the hole buffer layer 70 may include a first hole buffer layer (not shown) and a second hole buffer layer (not shown), and in some example embodiments, the first hole buffer layer may be formed close to the active layer 30, or in some example embodiments, in contact with the active layer 30, and the second hole buffer layer may be formed closest to the anode 10, or in some example embodiments, in contact with the anode 10. In some example embodiments, the energy level difference (i.e., energy barrier) between the active layer 30, the first hole buffer layer, the second hole buffer layer, and the anode may have a very small difference and / or be substantially equal. In some example embodiments, with... Figure 5 and Figure 6 The LUMO energy level difference between the active layer 30, the first electron buffer layer 50a, the second electron buffer layer 50b and the cathode 20 is the same, and the HOMO energy level difference between the active layer 30, the first hole buffer layer, the second hole buffer layer and the anode 10 can satisfy relation 7, relation 8 and / or relation 9.

[0480] In some example implementations, the hole buffer layer 70 may be omitted.

[0481] Device 100C may also include an anti-reflective layer (not shown) on the anode 10 or cathode 20. The anti-reflective layer is the same as described above.

[0482] When light is incident through the anode 10 or the cathode 20, the device 100C can generate excitons internally, and the active layer 30 can be configured to absorb light of a specific (or alternatively, predetermined) wavelength spectrum. The excitons can be separated into electrons and holes in the active layer 30, and the separated electrons can be transported to the cathode 20 through the first auxiliary layer 60a and the second auxiliary layer 60b, while the separated holes can be transported to the anode 10 through the hole buffer layer 70, thereby allowing current to flow.

[0483] Figure 9 This is a cross-sectional view showing an optoelectronic device according to some example embodiments.

[0484] Reference Figure 9 , and including Figure 7-8 Similar to some of the example embodiments shown, the optoelectronic device 100D (hereinafter also referred to as device 100D) includes: an anode 10 and a cathode 20 facing each other; an active layer 30 between the anode 10 and the cathode 20; an auxiliary layer 60 between the cathode 20 and the active layer 30; and a hole buffer layer 70 between the anode 10 and the active layer 30. The anode 10, cathode 20, active layer 30, and hole buffer layer 70 are the same as those described above. Figure 7-8 The descriptions are the same.

[0485] However, in including Figure 9-10 In some example implementations of the illustrated embodiments, and including Figure 7-8 Some of the example embodiments shown differ from the example embodiments in that, in addition to the first auxiliary layer 60a and the second auxiliary layer 60b, the auxiliary layer 60 may also include a third auxiliary layer 60c. The third auxiliary layer 60c may be located between the first auxiliary layer 60a and the second auxiliary layer 60b. In some example embodiments, one surface of the third auxiliary layer 60c may contact the first auxiliary layer 60a, and the other surface of the third auxiliary layer 60c may contact the second auxiliary layer 60b.

[0486] The auxiliary layer 60 may have a structure in which the first auxiliary layer 60a, the third auxiliary layer 60c, and the second auxiliary layer 60b are stacked in sequence. Therefore, the transport direction of the separated charge carriers (e.g., electrons) in the active layer 30 is through the active layer 30, the first auxiliary layer 60a, the third auxiliary layer 60c, the second auxiliary layer 60b, and the cathode 20 in sequence.

[0487] Figure 10 It is shown Figure 9 Energy diagram of the energy levels of cathode 20, auxiliary layer 60 and active layer 30 in optoelectronic device.

[0488] Reference Figure 10Separated electrons in the active layer 30 can be transported along the LUMO level to the cathode 20. In some example embodiments, along the LUMO level (LUMO) of the active layer 30... 30 ), the LUMO level of the first auxiliary layer 60a (LUMO 60a ), the LUMO level of the third auxiliary layer at 60c (LUMO 60c ), the LUMO level of the second auxiliary layer 60b (LUMO 60b ) and the work function (WF) of cathode 20 20 ) is transmitted to cathode 20.

[0489] Here, the LUMO level of the active layer 30 (LUMO 30 ), the LUMO level of the first auxiliary layer 60a (LUMO 60a ), the LUMO level of the third auxiliary layer at 60c (LUMO 60c ), the LUMO level of the second auxiliary layer 60b (LUMO 60b ) and the work function (WF) of cathode 20 20 The depth can be progressively increased; in some example implementations, the LUMO level of the active layer 30 (LUMO) 30 The work function (WF) of the cathode 20 can be the shallowest. 20 It could be the deepest, the first auxiliary layer 60a LUMO level (LUMO 60a ), the LUMO level of the third auxiliary layer at 60c (LUMO 60c ) and the LUMO level of the second auxiliary layer 60b (LUMO 60b It can exist in the LUMO level of the active layer 30 (LUMO). 30 ) and the work function (WF) of cathode 20 20 Between. In other words, the LUMO level (LUMO) of active layer 30. 30 ), the LUMO level of the first auxiliary layer 60a (LUMO 60a ), the LUMO level of the third auxiliary layer at 60c (LUMO 60c ), the LUMO level of the second auxiliary layer 60b (LUMO 60b ) and the work function (WF) of cathode 20 20 It can have cascaded energy levels.

[0490] In some example implementations, the LUMO level of the active layer 30 (LUMO 30 ), the LUMO level of the first auxiliary layer 60a (LUMO 60a ), the LUMO level of the third auxiliary layer at 60c (LUMO 60c ), the LUMO level of the second auxiliary layer 60b (LUMO60b ) and the work function (WF) of cathode 20 20 It can have a stepped shape.

[0491] In some example implementations, specific (or alternatively, predetermined) energy barriers may exist between adjacent layers. These energy barriers may include the energy barrier (ΔΦ1) between the active layer 30 and the first auxiliary layer 60a, the energy barrier (ΔΦ2) between the second auxiliary layer 60b and the cathode 20, the energy barrier (ΔΦ4) between the third auxiliary layer 60c and the second auxiliary layer 60b, and the energy barrier (ΔΦ5) between the first auxiliary layer 60a and the third auxiliary layer 60c. The energy barrier (ΔΦ1) may be the LUMO level (LUMO energy level) of the active layer 30. 30 ) and the LUMO level of the first auxiliary layer 60a (LUMO 60a The difference between the two, the energy barrier (ΔΦ2) can be the LUMO level (LUMO) of the second auxiliary layer 60b. 60b ) and the work function (WF) of cathode 20 20 The difference between the two values, the energy barrier (ΔΦ4) can be the LUMO level (LUMO) of the third auxiliary layer 60c. 60c ) and the LUMO level of the second auxiliary layer 60b (LUMO 60b The difference between the energy barrier (ΔΦ5) and the energy barrier (ΔΦ5) can be the LUMO level of the first auxiliary layer 60a. 60a ) and the LUMO level of the third auxiliary layer 60c (LUMO 60c The difference between ).

[0492] The energy barriers (ΔΦ1, ΔΦ2, ΔΦ4 and ΔΦ5) between adjacent layers can have very small differences and / or be essentially equal.

[0493] In some example embodiments, the energy barrier (ΔΦ1) between the active layer 30 and the first auxiliary layer 60a, and the energy barrier (ΔΦ2) between the second auxiliary layer 60b and the cathode 20, may have very small differences and / or be substantially equal. In some example embodiments, the energy diagrams of the active layer 30, the first auxiliary layer 60a, the second auxiliary layer 60b, and the cathode 20 may satisfy relation 1.

[0494] In some example embodiments, the energy barrier (ΔΦ2) between the second auxiliary layer 60b and the cathode 20, and the energy barrier (ΔΦ4) between the third auxiliary layer 60c and the second auxiliary layer 60b, may have very small differences and / or be substantially equal. In some example embodiments, the energy diagrams of the third auxiliary layer 60c, the second auxiliary layer 60b, and the cathode 20 may satisfy relation 4.

[0495] [Relationship 4]

[0496] |ΔΦ2-ΔΦ4|≤0.1eV

[0497] In some example embodiments, the energy barrier (ΔΦ1) between the active layer 30 and the first auxiliary layer 60a, and the energy barrier (ΔΦ5) between the first auxiliary layer 60a and the third auxiliary layer 60c, may have small differences and / or be substantially equal. In some example embodiments, the energy diagrams of the active layer 30, the first auxiliary layer 60a, and the third auxiliary layer 60c may satisfy relation 5.

[0498] [Relation 5]

[0499] |ΔΦ1-ΔΦ5|≤0.1eV

[0500] In some example embodiments, the energy barrier (ΔΦ4) between the second auxiliary layer 60b and the third auxiliary layer 60c, and the energy barrier (ΔΦ5) between the first auxiliary layer 60a and the third auxiliary layer 60c, may have small differences and / or be substantially equal. In some example embodiments, the energy diagrams of the first auxiliary layer 60a, the third auxiliary layer 60c, and the second auxiliary layer 60b may satisfy relation 6.

[0501] [Relationship 6]

[0502] |ΔΦ4-ΔΦ5|≤0.1eV

[0503] In some example embodiments, the energy barriers (ΔΦ1) between the active layer 30 and the first auxiliary layer 60a, (ΔΦ2) between the second auxiliary layer 60b and the cathode 20, (ΔΦ4) between the third auxiliary layer 60c and the second auxiliary layer 60b, and (ΔΦ5) between the first auxiliary layer 60a and the third auxiliary layer 60c can have very small differences and / or be substantially equal. In some example embodiments, the energy diagrams of the active layer 30, the first auxiliary layer 60a, the third auxiliary layer 60c, the second auxiliary layer 60b, and the cathode 20 can simultaneously satisfy relations 4, 5, and 6.

[0504] Based on the active layer 30, the first auxiliary layer 60a, the third auxiliary layer 60c, the second auxiliary layer 60b, and the cathode 20 satisfying one or more of Equations 4, 5, and 6, the energy barriers (ΔΦ1, ΔΦ2, ΔΦ4, and ΔΦ5) of the active layer 30, the first auxiliary layer 60a, the third auxiliary layer 60c, the second auxiliary layer 60b, and the cathode 20 can satisfy one or more of Equations 4, 5, and 6. Therefore, electron transport delay at the interface of the layers present in the electron transport path can be prevented, thus exhibiting high charge extraction efficiency. Furthermore, the unwanted residual charge carriers remaining at the interface between adjacent layers can be reduced or prevented, thereby reducing or preventing image retention due to accumulated residual charge carriers. Therefore, the electrical performance of device 100D and / or sensors, electronic devices, etc., including device 100D can be improved.

[0505] Within this range, the energy diagrams of the active layer 30, the first auxiliary layer 60a, the third auxiliary layer 60c, the second auxiliary layer 60b, and the cathode 20 can satisfy relation 4A, relation 5A, and / or relation 6A.

[0506] [Relation 4A]

[0507] 0 < |ΔΦ2 - ΔΦ4| ≤ 0.1eV

[0508] [Relationship 5A]

[0509] 0 < |ΔΦ1 - ΔΦ5| ≤ 0.1eV

[0510] [Relation 6A]

[0511] 0 < |ΔΦ4 - ΔΦ5| ≤ 0.1 eV

[0512] Within this range, the energy diagrams of the active layer 30, the first auxiliary layer 60a, the third auxiliary layer 60c, the second auxiliary layer 60b, and the cathode 20 can satisfy relation 4B, relation 5B, and / or relation 6B.

[0513] [Relation 4B]

[0514] |ΔΦ2-ΔΦ4|≤0.07eV

[0515] [Relation 5B]

[0516] |ΔΦ1-ΔΦ5|≤0.07eV

[0517] [Relation 6B]

[0518] |ΔΦ4-ΔΦ5|≤0.07eV

[0519] Within this range, the energy diagrams of the active layer 30, the first auxiliary layer 60a, the third auxiliary layer 60c, the second auxiliary layer 60b, and the cathode 20 can satisfy relation 4C, relation 5C, and / or relation 6C.

[0520] [Relationship 4C]

[0521] 0 < |ΔΦ2 - ΔΦ4| ≤ 0.07 eV

[0522] [Relationship 5C]

[0523] 0 < |ΔΦ1 - ΔΦ5| ≤ 0.07 eV

[0524] [Relationship 6C]

[0525] 0 < |ΔΦ4 - ΔΦ5| ≤ 0.07 eV

[0526] Within this range, the energy diagrams of the active layer 30, the first auxiliary layer 60a, the third auxiliary layer 60c, the second auxiliary layer 60b, and the cathode 20 can satisfy relation 4D, relation 5D, and / or relation 6D.

[0527] [Relational 4D]

[0528] |ΔΦ2-ΔΦ4|≤0.05eV

[0529] [Relational 5D]

[0530] |ΔΦ1-ΔΦ5|≤0.05eV

[0531] [Relational 6D]

[0532] |ΔΦ4-ΔΦ5|≤0.05eV

[0533] Within this range, the energy diagrams of the active layer 30, the first auxiliary layer 60a, the third auxiliary layer 60c, the second auxiliary layer 60b, and the cathode 20 can satisfy relation 4E, relation 5E, and / or relation 6E.

[0534] [Relational Formula 4E]

[0535] 0 < |ΔΦ2 - ΔΦ4| ≤ 0.05 eV

[0536] [Relation 5E]

[0537] 0 < |ΔΦ1 - ΔΦ5| ≤ 0.05 eV

[0538] [Relation 6E]

[0539] 0 < |ΔΦ4 - ΔΦ5| ≤ 0.05 eV

[0540] Within this range, the energy diagrams of the active layer 30, the first auxiliary layer 60a, the third auxiliary layer 60c, the second auxiliary layer 60b, and the cathode 20 can satisfy relation 4F, relation 5F, and / or relation 6F.

[0541] [Relationship 4F]

[0542] |ΔΦ2-ΔΦ4|≤0.03eV

[0543] [Relationship 5F]

[0544] |ΔΦ1-ΔΦ5|≤0.03eV

[0545] [Relationship 6F]

[0546] |ΔΦ4-ΔΦ5|≤0.03eV

[0547] Within this range, the energy diagrams of the active layer 30, the first auxiliary layer 60a, the third auxiliary layer 60c, the second auxiliary layer 60b, and the cathode 20 can satisfy relation 4G, relation 5G, and / or relation 6G.

[0548] [Relational 4G]

[0549] 0 < |ΔΦ2 - ΔΦ4| ≤ 0.03 eV

[0550] [Relational 5G]

[0551] 0 < |ΔΦ1 - ΔΦ5| ≤ 0.03 eV

[0552] [Relational 6G]

[0553] 0 < |ΔΦ4 - ΔΦ5| ≤ 0.03 eV

[0554] Within this range, the energy diagrams of the active layer 30, the first auxiliary layer 60a, the third auxiliary layer 60c, the second auxiliary layer 60b, and the cathode 20 can satisfy relation 4H, relation 5H, and / or relation 6H.

[0555] [Relation 4H]

[0556] |ΔΦ2-ΔΦ4|≤0.01eV

[0557] [Relation 5H]

[0558] |ΔΦ1-ΔΦ5|≤0.01eV

[0559] [Relation 6H]

[0560] |ΔΦ4-ΔΦ5|≤0.01eV

[0561] Within this range, the energy diagrams of the active layer 30, the first auxiliary layer 60a, the third auxiliary layer 60c, the second auxiliary layer 60b, and the cathode 20 can satisfy relation 4I, relation 5I, and / or relation 6I.

[0562] [Relation 4I]

[0563] 0 < |ΔΦ2 - ΔΦ4| ≤ 0.01 eV

[0564] [Relation 5I]

[0565] 0 < |ΔΦ1 - ΔΦ5| ≤ 0.01 eV

[0566] [Relation 6I]

[0567] 0 < |ΔΦ4 - ΔΦ5| ≤ 0.01 eV

[0568] In some example embodiments, the energy barriers (ΔΦ1, ΔΦ2, ΔΦ4, and ΔΦ5) may be less than or equal to about 0.5 eV, and within this range, less than or equal to about 0.4 eV, less than or equal to about 0.3 eV, or less than or equal to about 0.25 eV. In some example embodiments, the energy barriers (ΔΦ1, ΔΦ2, ΔΦ4, and ΔΦ5) may independently range from about 0.10 eV to about 0.25 eV, and within this range, be about 0.15 eV to about 0.25 eV, about 0.18 eV to about 0.25 eV, or about 0.20 eV to about 0.25 eV.

[0569] The first auxiliary layer 60a, the second auxiliary layer 60b, and the third auxiliary layer 60c may each have a thickness of less than or equal to about 10 nm, for example, less than or equal to about 8 nm, less than or equal to about 7 nm, less than or equal to about 5 nm, or less than or equal to about 3 nm.

[0570] The first auxiliary layer 60a, the second auxiliary layer 60b, and the third auxiliary layer 60c may each comprise an organic material, an inorganic material, and / or an organic / inorganic material. In some example embodiments, at least one of the first auxiliary layer 60a, the second auxiliary layer 60b, and the third auxiliary layer 60c may comprise an organic material. In some example embodiments, the first auxiliary layer 60a, the second auxiliary layer 60b, and the third auxiliary layer 60c may each comprise an organic material.

[0571] The aforementioned device 100-100D can be applied to various electronic devices, including, for example, solar cells, light-emitting devices, sensors, photodetectors and / or optical sensors, but is not limited thereto.

[0572] In some example implementations, device 100-100D may be applied to one or more sensors (e.g., included in one or more sensors), and said one or more sensors may be, for example, image sensors.

[0573] In the following description, an example of an image sensor in which the aforementioned device 100-100D is applied is described with reference to the accompanying drawings. Here, an organic CMOS image sensor is described as an example of an image sensor.

[0574] Figure 11 This is a schematic cross-sectional view of an example image sensor according to some exemplary implementations.

[0575] Reference Figure 11 According to some example embodiments, the image sensor 300 includes a semiconductor substrate 110, an insulating layer 80 (hereinafter also referred to as the upper insulating layer 80), an optoelectronic device 100' (hereinafter also referred to as the device 100'), and a color filter layer 170.

[0576] The semiconductor substrate 110 may be a silicon substrate and is integrated with a transfer transistor (not shown) and a charge storage unit 155. The transfer transistor and / or the charge storage unit 155 may be integrated for each pixel. The charge storage unit 155 is electrically connected to the device 100'.

[0577] Metal lines (not shown) and pads (not shown) are formed on the semiconductor substrate 110. To reduce signal delay, the metal lines and pads may be made of metals with low resistivity, such as aluminum (Al), copper (Cu), silver (Ag), and alloys thereof in some example embodiments, but are not limited thereto.

[0578] An insulating layer 80 is formed on the metal lines and pads. The insulating layer 80 may be made of inorganic insulating materials such as silicon oxide and / or silicon nitride, or low dielectric constant (low K) materials such as SiC, SiCOH, SiCO, and SiOF. The insulating layer 80 has trenches 85 that expose charge storage portions 155. The trenches 85 may be filled with a filler.

[0579] The aforementioned device 100' is formed on the insulating layer 80. Device 100' can be... Figure 1 , Figure 3 , Figure 5 , Figure 7 and Figure 9 One of the devices 100-100D shown. Device 100' can be a photoelectric conversion device. Its specific description is the same as above. The anode 10 or cathode 20 of device 100' can be connected to the charge storage section 155.

[0580] A color filter layer 170 is formed on device 100'. The color filter layer 170 includes a blue filter 170a formed in blue pixels, a red filter 170b formed in red pixels, and a green filter 170c formed in green pixels. However, this disclosure is not limited thereto, and may alternatively or additionally include a cyan filter, a magenta filter, and / or a yellow filter.

[0581] An insulating layer 180 is formed between device 100' and color filter layer 170. The insulating layer 180 may be omitted.

[0582] A focusing lens (not shown) may be further formed on the color filter layer 170. The focusing lens can control the direction of the incident light and focus the light into a region. In some example embodiments, the focusing lens may have a cylindrical or hemispherical shape, but is not limited thereto.

[0583] Figure 12 This is a schematic perspective view of an image sensor according to some example embodiments. Figure 13 It is shown Figure 12 A cross-sectional view of an example image sensor.

[0584] Reference Figure 12 and Figure 13 According to some example embodiments, the image sensor 400 includes a semiconductor substrate 110, a lower insulating layer 160, a color filter layer 170, an upper insulating layer 80, and the aforementioned device 100'. The semiconductor substrate 110 is integrated with photosensitive devices 150a and 150b, a transfer transistor (not shown), and a charge storage unit 155. The aforementioned device 100' may be a photoelectric conversion device.

[0585] The semiconductor substrate 110 may be a silicon substrate and is integrated with photosensitive devices 150a and 150b, a transfer transistor (not shown), and a charge storage unit 155. The photosensitive devices 150a and 150b may be photodiodes.

[0586] Photosensitive elements 150a and 150b, as well as a transfer transistor and / or a charge storage unit 155, can be integrated in each pixel. As shown, photosensitive elements 150a and 150b can be included in the blue and red pixels, respectively. The charge storage unit 155 can be included in the green pixel.

[0587] Photosensitive devices 150a and 150b can be configured to sense light, and the sensed information can be transmitted by a transfer transistor. A charge storage unit 155 is electrically connected to device 100', and the information in the charge storage unit 155 can be transmitted by a transfer transistor.

[0588] Metal lines (not shown) and pads (not shown) are formed on the semiconductor substrate 110. To reduce signal delay, the metal lines and pads may be made of metals with low resistivity, such as aluminum (Al), copper (Cu), silver (Ag), and alloys thereof in some example embodiments, but are not limited thereto. Furthermore, this disclosure is not limited to this structure, and the metal lines and pads may be located below the photosensitive devices 150a and 150b.

[0589] A lower insulating layer 160 is formed on the metal lines and pads. The lower insulating layer 160 may be made of inorganic insulating materials such as silicon oxide and / or silicon nitride, or low dielectric constant (low K) materials such as SiC, SiCOH, SiCO, and SiOF. The lower insulating layer 160 has trenches 85 that expose charge storage portions 155. The trenches 85 may be filled with a filler.

[0590] A color filter layer 170 is formed on the lower insulating layer 160. The color filter layer 170 includes a blue filter 170a formed in the blue pixels and a red filter 170b formed in the red pixels. In some example embodiments, a green filter is not included, but may be further included.

[0591] An upper insulating layer 80 is formed on the color filter layer 170. The upper insulating layer 80 can eliminate the steps caused by the color filter layer 170 and smooth the surface. The upper insulating layer 80 and the lower insulating layer 160 may include through-holes (e.g., trenches 85) and contact holes (not shown) that expose pads.

[0592] The aforementioned device 100' is formed on the upper insulating layer 80. Device 100' can be... Figure 1 , Figure 3 , Figure 5 , Figure 7 and Figure 9 One of the devices 100-100D shown. Device 100' can be a photoelectric conversion device, which is described in the same way as above. The anode 10 or cathode 20 of device 100' can be connected to the charge storage section 155.

[0593] A focusing lens (not shown) may be further formed on device 100'. The focusing lens can control the direction of incident light and focus the light into a region. In some example embodiments, the focusing lens may have a cylindrical or hemispherical shape, but is not limited thereto. An insulating layer 180 is formed on device 100'. The insulating layer 180 may be omitted.

[0594] Figure 14 This is a cross-sectional view showing an image sensor according to some example embodiments.

[0595] Reference Figure 14 , and including Figure 12-13As with some of the example embodiments shown, the image sensor 500 according to some example embodiments includes a semiconductor substrate 110, an upper insulating layer 80, a device 100' and an insulating layer 180, wherein the semiconductor substrate 110 is integrated with photosensitive devices 150a and 150b, a transfer transistor (not shown) and a charge storage unit 155.

[0596] However, with including Figure 12-13 Some of the example implementations shown differ from those in the example implementations, and are based on including Figure 14 In some exemplary embodiments of the image sensor 500 shown, photosensitive devices 150a and 150b are stacked vertically, and the color filter layer 170 is omitted. Photosensitive devices 150a and 150b are electrically connected to a charge storage unit 155 (not shown), and information can be transmitted by a transfer transistor. Photosensitive devices 150a and 150b can selectively absorb light in each wavelength spectrum depending on the stacking depth.

[0597] Device 100' can be Figure 1 , Figure 3 , Figure 5 , Figure 7 and Figure 9 One of the devices 100-100D shown. Device 100' can be a photoelectric conversion device. Its specific description is the same as above. The anode 10 or cathode 20 of device 100' can be connected to the charge storage section 155.

[0598] Figure 15 This is a schematic perspective view of an image sensor according to some example embodiments. Figure 16 yes Figure 15 A cross-sectional view of the image sensor.

[0599] The image sensor 600 according to some example embodiments has a structure in which a green photoelectric conversion device is configured to selectively absorb light in the green wavelength spectrum, a blue photoelectric conversion device is configured to selectively absorb light in the blue wavelength spectrum, and a red photoelectric conversion device is configured to selectively absorb light in the red wavelength spectrum.

[0600] Image sensor 600 according to some example embodiments includes a semiconductor substrate 110, a lower insulating layer 160, an intermediate insulating layer 65, an upper insulating layer 80, a first optoelectronic device 100a (hereinafter also referred to as first device 100a), a second optoelectronic device 100b (hereinafter also referred to as second device 100b), and a third optoelectronic device 100c (hereinafter also referred to as third device 100c).

[0601] The semiconductor substrate 110 may be a silicon substrate and is integrated with a transport transistor (not shown) and charge storage units 155a, 155b and 155c.

[0602] Metal lines (not shown) and pads (not shown) are formed on a semiconductor substrate 110, and a lower insulating layer 160 is formed on the metal lines and pads.

[0603] The first device 100a, the second device 100b, and the third device 100c are sequentially formed on the lower insulating layer 160.

[0604] The first device 100a, the second device 100b, and the third device 100c can be independently... Figure 1 , Figure 3 , Figure 5 , Figure 7 and Figure 9 One of the devices 100-100D shown. The first to third devices 100a-100c can be photoelectric conversion devices. Their specific descriptions are the same as above. The anode 10 or cathode 20 of the first to third devices 100a-100c can be connected to the charge storage sections 155a, 155b and 155c, respectively.

[0605] The active layer 30 of the first device 100a may be a photoelectric conversion layer configured to selectively absorb light of any wavelength spectrum, including red, blue, and green, for photoelectric conversion. In some example embodiments, the first device 100a may be a red photoelectric conversion device. The anode 10 or cathode 20 of the first device 100a may be electrically connected to the first charge storage section 155a.

[0606] An intermediate insulating layer 65 is formed on the first device 100a.

[0607] The second device 100b is formed on the intermediate insulating layer 65.

[0608] The active layer 30 of the second device 100b may be a photoelectric conversion layer configured to selectively absorb light of any wavelength spectrum, including red, blue, and green, for photoelectric conversion. In some example embodiments, the second device 100b may be a blue photoelectric conversion device. The anode 10 or cathode 20 of the second device 100b may be electrically connected to the second charge storage section 155b.

[0609] An upper insulating layer 80 is formed on the second device 100b. The lower insulating layer 160, the intermediate insulating layer 65 and the upper insulating layer 80 have a plurality of through holes 85a, 85b and 85c that expose charge storage portions 155a, 155b and 155c respectively.

[0610] The third device 100c is formed on the upper insulating layer 80. The active layer 30 of the third device 100c may be a photoelectric conversion layer, configured to selectively absorb light of any wavelength spectrum, including red, blue, and green, to photoelectrically convert the light. In some example embodiments, the third device 100c may be a green photoelectric conversion device. The anode 10 or cathode 20 of the third device 100c may be electrically connected to the third charge storage section 155c.

[0611] A focusing lens (not shown) may be further formed on the third device 100c. The focusing lens controls the direction of the incident light and focuses the light into a region. In some example embodiments, the focusing lens may have a cylindrical or hemispherical shape, but is not limited thereto.

[0612] Although the accompanying drawings show a structure in which the first device 100a, the second device 100b and the third device 100c are stacked in sequence, this disclosure is not limited thereto, and the stacking order can be changed in various ways.

[0613] As described above, because the first device 100a, the second device 100b, and the third device 100c, which absorb light of different wavelength spectra, have a stacked structure, the size of the image sensor can be further reduced to achieve a smaller image sensor.

[0614] The aforementioned optoelectronic devices and image sensors are applicable to various electronic devices, such as mobile phones and digital cameras, but are not limited to these.

[0615] Figure 26 These are schematic diagrams of electronic devices according to some example implementations.

[0616] Reference Figure 26 Electronic device 2600 includes a processor 2620, a memory 2630, and an optoelectronic device 2640 (hereinafter also referred to as device 2640) electrically connected via a bus 2610. Device 2640 may include any of the various devices 100-100D described above and / or any of the sensors 300-600 according to any of the example embodiments. The memory 2630, which may be a non-transitory computer-readable medium, may store instruction programs. The processor 2620 may execute the stored program and thus perform at least one function, including controlling device 2640. The processor 2620 may run the stored instruction program to perform one or more functions. For example, the processor 2620 may be configured to process electrical signals generated by device 2640.

[0617] Some exemplary implementations are described in more detail below with reference to the following examples. However, the scope of this disclosure is not limited to the following examples.

[0618] Manufacturing of optoelectronic devices I

[0619] Example 1

[0620] ITO was sputtered onto a glass substrate to form a 150 nm thick anode (WF: 4.9 eV). A compound represented by chemical formula A-1 was deposited on the anode to form a 2.5 nm thick lower auxiliary layer (HOMO: 5.10 eV), and a compound represented by chemical formula A-2 was deposited on the lower auxiliary layer to form a 2.5 nm thick upper auxiliary layer (HOMO: 5.31 eV). Then, a p-type semiconductor (λ) represented by chemical formula B was... max Yb (545 nm thick) and n-type semiconductor fullerene C60 were co-deposited on the upper auxiliary layer at a 1:1 volume ratio to form a 100 nm thick photoelectric conversion layer (HOMO: 5.55 eV). Yb was then thermally evaporated onto the photoelectric conversion layer to form a 1.5 nm thick electron buffer layer (WF: 2.6 eV). ITO was then sputtered onto the electron buffer layer to form a 7 nm thick cathode (WF: 4.7 eV). Aluminum oxide (Al2O3) was then deposited on the cathode to form a 50 nm thick antireflective layer, which was then sealed with a glass plate to fabricate the optoelectronic device.

[0621] [Chemical Formula A-1]

[0622]

[0623] [Chemical Formula A-2]

[0624]

[0625] [Chemical Formula B]

[0626]

[0627] Comparative Example 1

[0628] The optoelectronic device was fabricated according to the same method as in Example 1, except that a single 5 nm thick auxiliary layer (HOMO: 5.73 eV) was deposited using a compound represented by chemical formula A-3 instead of a lower auxiliary layer and an upper auxiliary layer.

[0629] [Chemical Formula A-3]

[0630]

[0631] Comparative Example 2

[0632] The optoelectronic device was fabricated according to the same method as in Example 1, except that a 2.5 nm thick upper auxiliary layer (HOMO: 5.43 eV) was formed by depositing a compound represented by chemical formula A-4 instead of a compound represented by chemical formula A-2.

[0633] [Chemical Formula A-4]

[0634]

[0635] Comparative Example 3

[0636] The optoelectronic device was fabricated according to the same method as in Example 1, except that a 2.5 nm thick upper auxiliary layer (HOMO: 5.22 eV) was formed by depositing a compound represented by chemical formula A-5 instead of a compound represented by chemical formula A-2.

[0637] [Chemical Formula A-5]

[0638]

[0639] Comparative Example 4

[0640] The optoelectronic device was fabricated according to the same method as in Example 1, except that a 2.5 nm thick upper auxiliary layer (HOMO: 5.50 eV) was formed by depositing a compound represented by chemical formula A-6 instead of a compound represented by chemical formula A-2.

[0641] [Chemical Formula A-6]

[0642]

[0643] Comparative Example 5

[0644] The optoelectronic device was fabricated according to the same method as in Example 1, except that a 2.5 nm thick lower auxiliary layer (HOMO: 5.00 eV) was formed by depositing a compound represented by chemical formula A-7 instead of chemical formula A-1, and a 2.5 nm thick upper auxiliary layer (HOMO: 5.50 eV) was formed by depositing a compound represented by chemical formula A-6 instead of chemical formula A-2.

[0645] [Chemical Formula A-7]

[0646]

[0647] Manufacturing of Optoelectronic Devices II

[0648] Example 2

[0649] Except for forming a 5nm thick upper auxiliary layer instead of a 2.5nm thick upper auxiliary layer, the optoelectronic device is fabricated according to the same method as in Example 1.

[0650] Comparative Example 6

[0651] Except for forming a 5nm thick upper auxiliary layer instead of a 2.5nm thick upper auxiliary layer, the optoelectronic device was fabricated according to the same method as in Comparative Example 2.

[0652] Comparative Example 7

[0653] Except for forming a 5nm thick upper auxiliary layer instead of a 2.5nm thick upper auxiliary layer, the optoelectronic device was fabricated according to the same method as in Comparative Example 4.

[0654] Comparative Example 8

[0655] Except for depositing a 5 nm thick lower auxiliary layer (HOMO: 5.73 eV) by depositing a compound represented by chemical formula A-3 instead of a compound represented by chemical formula A-1, and depositing a 2.5 nm thick upper auxiliary layer (HOMO: 5.10 eV) by depositing a compound represented by chemical formula A-1 instead of a compound represented by chemical formula A-2, the optoelectronic device was fabricated according to the same method as in Comparative Example 4.

[0656] Assessment I

[0657] The energy barriers of optoelectronic devices according to the examples and comparative examples are shown in Table 1 and Figures 17 to 23 As shown in the image.

[0658] Figure 17 This shows the energy diagram of the anode-to-active layer energy levels of the optoelectronic devices according to Examples 1 and 2. Figure 18 This is a diagram showing the energy levels from the anode to the active layer of the optoelectronic device according to Comparative Example 1. Figure 19 This is a diagram showing the energy levels from the anode to the active layer of the optoelectronic devices according to Comparative Example 2 and Comparative Example 6. Figure 20 This is a diagram showing the energy levels from the anode to the active layer of the optoelectronic device according to Comparative Example 3. Figure 21 This is a diagram showing the energy levels from the anode to the active layer of the optoelectronic devices according to Comparative Example 4 and Comparative Example 7. Figure 22 This is a diagram showing the energy levels from the anode to the active layer of the optoelectronic device according to Comparative Example 5. Figure 23 This is a diagram showing the energy levels from the anode to the active layer of the optoelectronic device according to Comparative Example 8.

[0659] Table 1

[0660] <![CDATA[ΔΦ1(eV)]]> <![CDATA[ΔΦ2(eV)]]> <![CDATA[ΔΦ3(eV)]]> Example 1, Example 2 0.24 0.20 0.21 Comparative Example 1 0.18 0.83 - Comparative Example 2, Comparative Example 6 0.12 0.20 0.33 Comparative Example 3 0.33 0.20 0.12 Comparative Example 4, Comparative Example 7 0.05 0.20 0.40 Comparative Example 5 0.05 0.1 0.5 Comparative Example 8 0.45 0.83 0.63

[0661] *ΔΦ1: The difference between the HOMO energy level of the active layer and the HOMO energy level of the upper auxiliary layer.

[0662] *ΔΦ2: The difference between the HOMO energy level of the lower auxiliary layer and the work function of the anode, and

[0663] *ΔΦ3: The difference between the HOMO energy levels of the upper auxiliary layer and the lower auxiliary layer.

[0664] Assessment II

[0665] The residual electronic properties of optoelectronic devices based on example and comparative examples were evaluated.

[0666] Residual electronic properties were evaluated by irradiating the optoelectronic device, according to the example and comparative examples, with light of a photoelectrically convertible green wavelength spectrum for a specific (or alternatively, predetermined) time, and then turning it off, measuring the amount of charge carriers that were photoelectrically converted but not used for signal processing and thus read in the next frame, specifically using a Keithley 2400 device at 10 -6 Current is measured in seconds. Residual electron quantity is expressed as h+ / s / μm. 2 The residual electron quantity of the optoelectronic device according to the comparative example was evaluated relative to the residual electron quantity of the optoelectronic device when the residual electron quantity of the optoelectronic devices of Example 1 and Example 2 were respectively regarded as "100" (reference).

[0667] The residual electronic properties of examples and comparative examples including an auxiliary layer with a total thickness (T) of 5 nm are shown in Table 2, and the residual electronic properties of examples and comparative examples including an auxiliary layer with a total thickness (T) of 7.5 nm are shown in Table 3.

[0668] Table 2

[0669] T:5nm Relative value of residual electrons Example 1 100(reference) Comparative Example 1 447 Comparative Example 2 143 Comparative Example 3 188 Comparative Example 4 234 Comparative Example 5 514

[0670] Table 3

[0671] T: 7.5nm Relative value of residual electrons Example 2 100(reference) Comparative Example 6 184 Comparative Example 7 192 Comparative Example 8 304

[0672] Referring to Tables 2 and 3, the optoelectronic device according to the example exhibits improved residual electronic characteristics compared to the optoelectronic device according to the comparative example.

[0673] Assessment III

[0674] Evaluate the photoelectric conversion efficiency of the photoelectric conversion devices based on the example and comparative examples.

[0675] The photoelectric conversion efficiency (EQE) was evaluated in the wavelength spectrum from 400 nm to 720 nm using the incident photon to current efficiency (IPCE) method.

[0676] Figure 24 This is a graph showing the photoelectric conversion efficiency of the photoelectric conversion devices according to Example 1 and Comparative Examples 1 to 4. Figure 25 It is a graph showing the photoelectric conversion efficiency of the photoelectric conversion devices according to Example 2 and Comparative Examples 1, 6 and 7.

[0677] Reference Figure 24 and Figure 25Compared to the photoelectric conversion device according to the comparative example, the photoelectric conversion device according to the example exhibits equal or improved photoelectric conversion efficiency. Furthermore, the photoelectric conversion efficiency does not deteriorate depending on the thickness of the auxiliary layer.

[0678] While this disclosure has been described in conjunction with what are currently considered practical exemplary embodiments, it will be understood that the inventive concept is not limited to the described exemplary embodiments. Rather, it is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.

[0679] This application claims priority and benefit to Korean Patent Application No. 10-2019-0108398, filed on September 2, 2019, with the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference.

Claims

1. An optoelectronic device, comprising: First electrode and second electrode; The active layer between the first electrode and the second electrode; as well as Multiple auxiliary layers between the first electrode and the active layer The plurality of auxiliary layers include a first auxiliary layer and a second auxiliary layer, wherein the first auxiliary layer is closer to the active layer relative to the second auxiliary layer, and the second auxiliary layer is closer to the first electrode relative to the first auxiliary layer. The highest occupied molecular orbital (HOMO) level of the active layer, the HOMO level of the first auxiliary layer, the HOMO level of the second auxiliary layer, and the work function of the first electrode are successively shallower from the vacuum level, such that the magnitude of the HOMO level of the first auxiliary layer is between the magnitude of the HOMO level of the active layer and the magnitude of the HOMO level of the second auxiliary layer, and the magnitude of the HOMO level of the second auxiliary layer is between the magnitude of the HOMO level of the first auxiliary layer and the magnitude of the work function of the first electrode. The energy diagrams of the active layer, the first auxiliary layer, the second auxiliary layer, and the first electrode satisfy equations 1, 2, and 3: [Relation 1] |ΔΦ1-ΔΦ2|≤0.1eV [Relationship 2] |ΔΦ1-ΔΦ3|≤0.1eV [Relationship 3] |ΔΦ3-ΔΦ2|≤0.1eV Among them, in relation 1, relation 2 and relation 3, ΔΦ1 is the difference between the HOMO energy level of the active layer and the HOMO energy level of the first auxiliary layer. ΔΦ2 is the difference between the HOMO energy level of the second auxiliary layer and the work function of the first electrode, and ΔΦ3 is the difference between the HOMO energy level of the first auxiliary layer and the HOMO energy level of the second auxiliary layer.

2. An optoelectronic device, comprising: First electrode and second electrode; The active layer between the first electrode and the second electrode; as well as Multiple auxiliary layers between the first electrode and the active layer The plurality of auxiliary layers include a first auxiliary layer and a second auxiliary layer, wherein the first auxiliary layer is closer to the active layer relative to the second auxiliary layer, and the second auxiliary layer is closer to the first electrode relative to the first auxiliary layer. The lowest unoccupied molecular orbital (LUMO) energy level of the active layer, the LUMO energy level of the first auxiliary layer, the LUMO energy level of the second auxiliary layer, and the work function of the first electrode are progressively deeper from the vacuum energy level, such that the magnitude of the LUMO energy level of the first auxiliary layer is between the magnitude of the LUMO energy level of the active layer and the magnitude of the LUMO energy level of the second auxiliary layer, and the magnitude of the LUMO energy level of the second auxiliary layer is between the magnitude of the LUMO energy level of the first auxiliary layer and the magnitude of the work function of the first electrode. The energy diagrams of the active layer, the first auxiliary layer, the second auxiliary layer, and the first electrode satisfy equations 1, 2, and 3: [Relation 1] |ΔΦ1-ΔΦ2|≤0.1eV [Relationship 2] |ΔΦ1-ΔΦ3|≤0.1eV [Relationship 3] |ΔΦ3-ΔΦ2|≤0.1eV Among them, in relation 1, relation 2 and relation 3, ΔΦ1 is the difference between the LUMO energy level of the active layer and the LUMO energy level of the first auxiliary layer. ΔΦ2 is the difference between the LUMO energy level of the second auxiliary layer and the work function of the first electrode, and ΔΦ3 is the difference between the LUMO energy level of the first auxiliary layer and the LUMO energy level of the second auxiliary layer.

3. The optoelectronic device according to claim 1 or 2, wherein... The first auxiliary layer is in contact with the active layer, and The second auxiliary layer is in contact with the first electrode.

4. The optoelectronic device according to claim 1 or 2, wherein each of ΔΦ1, ΔΦ2 and ΔΦ3 is less than or equal to 0.5 eV.

5. The optoelectronic device according to claim 1, wherein the energy diagrams of the active layer, the first auxiliary layer, the second auxiliary layer, and the first electrode satisfy equations 1E, 2E, and 3E: [Relation 1E] 0 <|ΔΦ1-ΔΦ2|≤0.05eV [Relation 2E] 0 <|ΔΦ1-ΔΦ3|≤0.05eV [Relationship 3E] 0 <|ΔΦ3-ΔΦ2|≤0.05eV in, In relations 1E to 3E ΔΦ1 is the difference between the HOMO energy level of the active layer and the HOMO energy level of the first auxiliary layer. ΔΦ2 is the difference between the HOMO energy level of the second auxiliary layer and the work function of the first electrode, and ΔΦ3 is the difference between the HOMO energy level of the first auxiliary layer and the HOMO energy level of the second auxiliary layer.

6. The optoelectronic device according to claim 1, wherein... The plurality of auxiliary layers also includes a third auxiliary layer between the first auxiliary layer and the second auxiliary layer. The work function of the HOMO level in the active layer, the HOMO level in the first auxiliary layer, the HOMO level in the third auxiliary layer, the HOMO level in the second auxiliary layer, and the work function of the first electrode successively decreases in depth, such that the magnitude of the HOMO level in the first auxiliary layer is between the magnitude of the HOMO level in the active layer and the magnitude of the HOMO level in the third auxiliary layer, the magnitude of the HOMO level in the third auxiliary layer is between the magnitude of the HOMO level in the first auxiliary layer and the magnitude of the HOMO level in the second auxiliary layer, and the magnitude of the HOMO level in the second auxiliary layer is between the magnitude of the HOMO level in the third auxiliary layer and the magnitude of the work function of the first electrode. The energy diagrams of the active layer, the first auxiliary layer, the third auxiliary layer, the second auxiliary layer, and the first electrode satisfy equations 4 and 5: [Relationship 4] |ΔΦ2-ΔΦ4|≤0.1eV [Relation 5] |ΔΦ1-ΔΦ5|≤0.1eV in, In relation 4 and relation 5 ΔΦ1 is the difference between the HOMO energy level of the active layer and the HOMO energy level of the first auxiliary layer. ΔΦ2 is the difference between the HOMO energy level of the second auxiliary layer and the work function of the first electrode. ΔΦ4 is the difference between the HOMO energy level of the third auxiliary layer and the HOMO energy level of the second auxiliary layer, and ΔΦ5 is the difference between the HOMO energy level of the first auxiliary layer and the HOMO energy level of the third auxiliary layer.

7. The optoelectronic device according to claim 6, wherein the energy diagrams of the active layer, the first auxiliary layer, the third auxiliary layer, the second auxiliary layer, and the first electrode satisfy relation 6: [Relationship 6] |ΔΦ4-ΔΦ5|≤0.1eV in, In relation 6, ΔΦ4 is the difference between the HOMO energy level of the third auxiliary layer and the HOMO energy level of the second auxiliary layer, and ΔΦ5 is the difference between the HOMO energy level of the first auxiliary layer and the HOMO energy level of the third auxiliary layer.

8. The optoelectronic device according to claim 2, wherein... The plurality of auxiliary layers also includes a third auxiliary layer between the first auxiliary layer and the second auxiliary layer. The work function of the LUMO level in the active layer, the LUMO level in the first auxiliary layer, the LUMO level in the third auxiliary layer, the LUMO level in the second auxiliary layer, and the work function of the first electrode successively increases in depth, such that the magnitude of the LUMO level in the first auxiliary layer is between the magnitude of the LUMO level in the active layer and the magnitude of the LUMO level in the third auxiliary layer, the magnitude of the LUMO level in the third auxiliary layer is between the magnitude of the LUMO level in the first auxiliary layer and the magnitude of the LUMO level in the second auxiliary layer, and the magnitude of the LUMO level in the second auxiliary layer is between the magnitude of the LUMO level in the third auxiliary layer and the magnitude of the work function of the first electrode. The energy diagrams of the active layer, the first auxiliary layer, the third auxiliary layer, the second auxiliary layer, and the first electrode satisfy equations 4 and 5: [Relationship 4] |ΔΦ2-ΔΦ4|≤0.1eV [Relation 5] |ΔΦ1-ΔΦ5|≤0.1eV in, In relation 4 and relation 5 ΔΦ1 is the difference between the LUMO energy level of the active layer and the LUMO energy level of the first auxiliary layer. ΔΦ2 is the difference between the LUMO energy level of the second auxiliary layer and the work function of the first electrode. ΔΦ4 is the difference between the LUMO energy level of the third auxiliary layer and the LUMO energy level of the second auxiliary layer, and ΔΦ5 is the difference between the LUMO energy level of the first auxiliary layer and the LUMO energy level of the third auxiliary layer.

9. The optoelectronic device according to claim 8, wherein the energy diagrams of the active layer, the first auxiliary layer, the third auxiliary layer, the second auxiliary layer, and the first electrode satisfy relation 6: [Relationship 6] |ΔΦ4-ΔΦ5|≤0.1eV in, In relation 6, ΔΦ4 is the difference between the LUMO energy level of the third auxiliary layer and the LUMO energy level of the second auxiliary layer, and ΔΦ5 is the difference between the LUMO energy level of the first auxiliary layer and the LUMO energy level of the third auxiliary layer.

10. The optoelectronic device according to claim 6 or 8, wherein... ΔΦ1, ΔΦ2, ΔΦ4 and ΔΦ5 are each less than or equal to 0.5 eV.

11. The optoelectronic device according to claim 1, wherein... The first electrode is the anode, and the second electrode is the cathode.

12. The optoelectronic device according to claim 11, further comprising: An electron buffer layer between the second electrode and the active layer.

13. The optoelectronic device according to claim 12, wherein the electron buffer layer comprises lanthanides, calcium (Ca), potassium (K), aluminum (Al), or alloys thereof.

14. The optoelectronic device according to claim 12, wherein... The electron buffer layer includes: A first electron buffer layer and a second electron buffer layer, wherein the first electron buffer layer is closer to the active layer relative to the second electron buffer layer, and the second electron buffer layer is closer to the second electrode relative to the first electron buffer layer. The work function of the lowest unoccupied molecular orbital (LUMO) level of the active layer, the LUMO level of the first electron buffer layer, the LUMO level of the second electron buffer layer, and the second electrode successively increases in depth, such that the magnitude of the LUMO level of the first electron buffer layer is between the magnitude of the LUMO level of the active layer and the magnitude of the LUMO level of the second electron buffer layer, and the magnitude of the LUMO level of the second electron buffer layer is between the magnitude of the LUMO level of the first electron buffer layer and the magnitude of the work function of the second electrode. The energy diagrams of the active layer, the first electron buffer layer, the second electron buffer layer, and the second electrode satisfy Equation 7: [Relation 7] |ΔΦ6-ΔΦ7|≤0.1eV In relation 7, ΔΦ6 is the difference between the LUMO energy level of the active layer and the LUMO energy level of the first electron buffer layer, and ΔΦ7 is the difference between the LUMO energy level of the second electron buffer layer and the work function of the second electrode.

15. The optoelectronic device according to claim 14, wherein the energy diagrams of the active layer, the first electron buffer layer, the second electron buffer layer, and the second electrode satisfy relations 8 and 9: [Relation 8] |ΔΦ6-ΔΦ8|≤0.1eV [Relation 9] |ΔΦ7-ΔΦ8|≤0.1eV in, In relation 8 and relation 9 ΔΦ6 is the difference between the LUMO energy level of the active layer and the LUMO energy level of the first electron buffer layer. ΔΦ7 is the difference between the LUMO energy level of the second electron buffer layer and the work function of the second electrode, and ΔΦ8 is the difference between the LUMO energy level of the first electron buffer layer and the LUMO energy level of the second electron buffer layer.

16. The optoelectronic device according to claim 15, wherein ΔΦ6, ΔΦ7 and ΔΦ8 are each less than or equal to 0.5 eV.

17. The optoelectronic device according to claim 2, wherein... The first electrode is a cathode. The second electrode is the anode.

18. The optoelectronic device according to claim 17, further comprising: A hole buffer layer between the second electrode and the active layer.

19. The optoelectronic device according to claim 1 or 2, wherein the first auxiliary layer and the second auxiliary layer each have a thickness of less than or equal to 10 nm.

20. The optoelectronic device according to claim 1 or 2, wherein the first auxiliary layer and the second auxiliary layer each comprise an organic material.

21. The optoelectronic device according to claim 1 or 2, wherein the active layer is a photoelectric conversion layer configured to absorb light in at least a portion of the wavelength spectrum and convert the absorbed light into an electrical signal.

22. A sensor comprising the optoelectronic device of claim 1 or 2.

23. An electronic device comprising the optoelectronic device as described in claim 1 or 2.

24. An electronic device comprising the sensor of claim 22.

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