Substrate support and plasma processing apparatus

Abstract

The present invention provides a substrate support and a plasma processing apparatus. The substrate support of the present invention includes a dielectric portion and at least one electrode. The at least one electrode is disposed in the dielectric portion for supplying a bias power to an object placed on the dielectric portion. The present invention can efficiently supply a bias power to an object mounted on the substrate support.

Description

TECHNICAL FIELD

[0001] An example embodiment of the present application relates to a substrate support and a plasma processing apparatus. BACKGROUND

[0002] A plasma processing apparatus is used in processing of a substrate. The plasma processing apparatus has a chamber and a substrate support. The substrate support has a susceptor and an electrostatic chuck, and is disposed in the chamber. The electrostatic chuck is disposed on the susceptor. The electrostatic chuck holds a substrate placed thereon. The susceptor is supplied with bias electric power from a high-frequency power source to attract ions from a plasma generated in the chamber to the substrate.

[0003] An edge ring is mounted on the substrate support. The substrate is disposed on the electrostatic chuck and in an area surrounded by the edge ring. The substrate support is sometimes configured to hold the edge ring by electrostatic attraction. The substrate support configured to hold the edge ring by electrostatic attraction is described in Patent Documents 1 to 3 below.

[0004] PRIOR ART DOCUMENTS

[0005] PATENT DOCUMENTS

[0006] Patent Document 1: Japanese Patent Application Publication No. 2002-33376

[0007] Patent Document 2: Japanese Patent Application Publication No. 2004-511901

[0008] Patent Document 3: Japanese Patent Application Publication No. 2016-122740 SUMMARY

[0009] PROBLEMS TO BE SOLVED BY THE INVENTION

[0010] The present application provides a technology capable of efficiently supplying bias electric power to an object mounted on a substrate support.

[0011] TECHNICAL SOLUTION TO THE PROBLEM

[0012] In one example embodiment, a substrate support is provided. The substrate support includes a dielectric portion and at least one electrode. The at least one electrode is disposed in the dielectric portion for supplying bias electric power to an object placed on the dielectric portion.

[0013] EFFECT OF THE INVENTION

[0014] According to one example embodiment, bias electric power can be efficiently supplied to an object mounted on a substrate support. BRIEF DESCRIPTION OF DRAWINGS

[0015] Figure 1 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to one example embodiment.

[0016] Figure 2 Fig. 1 is a diagram schematically showing a plasma processing apparatus according to an embodiment of the present application.

[0017] Figure 3 Fig. 2 is a diagram schematically showing a plasma processing apparatus according to another embodiment of the present application.

[0018] Figure 4 Fig. 3 is a diagram schematically showing a plasma processing apparatus according to still another embodiment of the present application.

[0019] Figure 5 Fig. 4 is a diagram schematically showing a plasma processing apparatus according to yet another embodiment of the present application.

[0020] Figure 6 Fig. 5 is a diagram schematically showing a plasma processing apparatus according to still another embodiment of the present application.

[0021] Figure 7 Fig. 6 is a diagram schematically showing a plasma processing apparatus according to yet another embodiment of the present application.

[0022] Figure 8 Fig. 7 is a diagram schematically showing a plasma processing apparatus according to still another embodiment of the present application.

[0023] Figure 9 Fig. 8 is a diagram schematically showing a plasma processing apparatus according to yet another embodiment of the present application.

[0024] Figure 10 Fig. 9 is a diagram schematically showing a plasma processing apparatus according to still another embodiment of the present application.

[0025] Figure 11 Fig. 10 is a diagram schematically showing a plasma processing apparatus according to yet another embodiment of the present application.

[0026] Figure 12 Fig. 11 is a diagram schematically showing a plasma processing apparatus according to still another embodiment of the present application, wherein (a) is a partial enlarged view showing another example of a first electrostatic chuck region, Figure 12 Fig. 12 is a diagram schematically showing a plasma processing apparatus according to still another embodiment of the present application, wherein (b) and Figure 12 Fig. 13 is a diagram schematically showing a plasma processing apparatus according to still another embodiment of the present application, wherein (c) is a partial enlarged view showing another example of a second electrostatic chuck region.

[0027] BRIEF DESCRIPTION OF DRAWINGS

[0028] 16 substrate holder

[0029] 21 first electrostatic chuck region

[0030] 22 second electrostatic chuck region

[0031] 22a, 22b, 22c electrode

[0032] W substrate

[0033] ER … edge ring DETAILED DESCRIPTION

[0034] Hereinafter, various exemplary embodiments will be described.

[0035] In one exemplary embodiment, a substrate support is provided. The substrate support includes a dielectric portion and at least one electrode. The at least one electrode is disposed in the dielectric portion for supplying bias power to an object placed on the dielectric portion. In the substrate support of this embodiment, the electrode to which the bias power is supplied is disposed in the dielectric portion on which the object can be placed. Therefore, the bias power can be efficiently supplied to the object placed on the substrate support.

[0036] In one exemplary embodiment, the substrate support can also include a first electrostatic chuck region and a second electrostatic chuck region. The first electrostatic chuck region is configured to hold a substrate placed thereon. The second electrostatic chuck region is configured to be disposed in a manner surrounding the first electrostatic chuck region and to hold an edge ring placed thereon. The second electrostatic chuck region has one or more electrodes disposed therein for generating electrostatic attraction between the second electrostatic chuck region and the edge ring and for supplying bias power to the edge ring through the second electrostatic chuck region. In this embodiment, the one or more electrodes include the at least one electrode described above.

[0037] In the above-described embodiment, the one or more electrodes can include a common electrode to which a voltage is applied to generate electrostatic attraction between the second electrostatic chuck region and the edge ring and to which the bias power is supplied. Alternatively, in the above-described embodiment, the one or more electrodes can include an electrode to which a voltage is applied to generate electrostatic attraction between the second electrostatic chuck region and the edge ring and an electrode to which the bias power is supplied. The one or more electrodes are disposed in the second electrostatic chuck region, and thus the bias power can be supplied to the edge ring through the second electrostatic chuck region in a state in which the edge ring is held by the second electrostatic chuck region. Therefore, the substrate support has a structure in which the bias power can be independently and stably supplied to the edge ring.

[0038] In one exemplary embodiment, the at least one electrode can also be a common electrode to which a voltage is applied to generate electrostatic attraction and to which the bias power is supplied. In this embodiment, the bias power is supplied to the electrode to which the voltage is applied to generate electrostatic attraction. Therefore, a dedicated electrode for supplying the bias power can be omitted in the second electrostatic chuck region. As a result, the structure of the second electrostatic chuck region can be a simple structure. Consequently, the substrate support can be manufactured at low cost and easily.

[0039] In one illustrative embodiment, the one or more electrodes include a first electrode to which a voltage is applied to generate electrostatic attraction, and a second electrode to which a bias electric power is supplied. In this embodiment, the second electrode is the at least one electrode described above.

[0040] In one illustrative embodiment, the second electrostatic chucking region is a bipolar electrostatic chuck. That is, the one or more electrodes can include a pair of electrodes that constitute a bipolar electrode. In another illustrative embodiment, the second electrostatic chucking region is a unipolar electrostatic chuck.

[0041] In one illustrative embodiment, the second electrostatic chucking region further has at least a portion of the dielectric portion described above. The one or more electrodes are provided in at least a portion of the dielectric portion.

[0042] In one illustrative embodiment, the first electrostatic chucking region and the second electrostatic chucking region share the dielectric portion described above. The first electrostatic chucking region can have a chuck electrode. The chuck electrode is an electrode to which a voltage for chucking a substrate to the first electrostatic chucking region can be applied, and is provided in the dielectric portion.

[0043] In one illustrative embodiment, the first electrostatic chucking region has a first dielectric portion and a chuck electrode. The chuck electrode is an electrode to which a voltage for chucking a substrate to the first electrostatic chucking region can be applied, and is provided in the first dielectric portion. The second dielectric portion, which is the dielectric portion possessed by the second electrostatic chucking region, is separated from the first dielectric portion.

[0044] In one illustrative embodiment, the substrate support further includes a heater provided in the dielectric portion possessed by the second electrostatic chucking region.

[0045] In one illustrative embodiment, the substrate support further includes a gas passage for supplying a heat transfer gas between the second electrostatic chucking region and the edge ring.

[0046] In one illustrative embodiment, the first electrostatic chucking region further includes another electrode. The other electrode is an electrode to which a bias electric power is supplied, and is provided in the first electrostatic chucking region. According to this embodiment, the bias electric power supplied to the substrate by the first electrostatic chucking region and the bias electric power supplied to the edge ring by the second electrostatic chucking region can be controlled independently of each other.

[0047] In one illustrative implementation, the substrate support can also have a base. The base can be electrically conductive. The base can be capable of being supplied with a bias power. The first electrostatic chuck region and the second electrostatic chuck region can be disposed on the base.

[0048] In other various illustrative implementations, a plasma processing apparatus is provided.

[0049] In one illustrative implementation, a plasma processing apparatus includes a chamber and a substrate support. The substrate support is any of the substrate supports of the various illustrative implementations described above. The substrate support is disposed within the chamber.

[0050] In one illustrative implementation, the plasma processing apparatus is any of the substrate supports of the various illustrative implementations described above having a first electrostatic chuck region and a second electrostatic chuck region. The plasma processing apparatus also includes a DC power supply and a bias power supply. The DC power supply is configured to generate a voltage for generating an electrostatic attraction between the second electrostatic chuck region and an edge ring. The bias power supply is configured to generate a bias power that is supplied to the edge ring through the second electrostatic chuck region.

[0051] In one illustrative implementation of a plasma processing apparatus, the substrate support is the substrate support having the other electrode disposed in the first electrostatic chuck region described above. In this implementation, the plasma processing apparatus also includes an other bias power supply configured to generate a bias power that is supplied to the other electrode.

[0052] In one illustrative implementation of a plasma processing apparatus, the substrate support is the substrate support having the base described above. In this implementation, the plasma processing apparatus also includes an other bias power supply configured to generate a bias power that is supplied to the base.

[0053] In one illustrative embodiment, a plasma processing apparatus includes a chamber, a substrate support, a DC power supply, a common electrical bus, a first electrical bus, a second electrical bus, and an impedance circuit. The substrate support is a substrate support having the other electrode disposed in the first electrostatic chuck region. The substrate support is disposed in the chamber. The DC power supply is configured to generate a voltage for generating electrostatic attraction between the second electrostatic chuck region and the edge ring. The bias power supply is configured to generate a bias electrical power. The common electrical bus is connected to the bias power supply. The first electrical bus and the second electrical bus branch from the common electrical bus. The first electrical bus is an electrical bus for the bias electrical power supplied to the other electrode. The second electrical bus is an electrical bus for the bias electrical power supplied to the edge ring through the second electrostatic chuck region. The impedance circuit is disposed on at least one of the first electrical bus and the second electrical bus. In this embodiment, the bias electrical power supplied to the edge ring through the second electrostatic chuck region and the bias electrical power supplied to the other electrode are generated by distributing the bias electrical power generated by the bias power supply to the first electrical bus and the second electrical bus.

[0054] In one illustrative embodiment, a plasma processing apparatus includes a chamber, a substrate support, a DC power supply, a common electrical bus, a first electrical bus, a second electrical bus, and an impedance circuit. The substrate support is a substrate support having the susceptor. The substrate support is disposed in the chamber. The DC power supply is configured to generate a voltage for generating electrostatic attraction between the second electrostatic chuck region and the edge ring. The bias power supply is configured to generate a bias electrical power. The common electrical bus is connected to the bias power supply. The first electrical bus and the second electrical bus branch from the common electrical bus. The first electrical bus is an electrical bus for the bias electrical power supplied to the susceptor. The second electrical bus is an electrical bus for the bias electrical power supplied to the edge ring through the second electrostatic chuck region. The impedance circuit is disposed on at least one of the first electrical bus and the second electrical bus. In this embodiment, the bias electrical power supplied to the edge ring through the second electrostatic chuck region and the bias electrical power supplied to the susceptor are generated by distributing the bias electrical power generated by the bias power supply to the first electrical bus and the second electrical bus.

[0055] Next, various illustrative embodiments will be described in detail with reference to the drawings. Furthermore, like or corresponding parts are denoted by like or corresponding reference numerals in the respective drawings.

[0056] Figure 1 is a diagram schematically showing a plasma processing apparatus of one illustrative embodiment. Figure 1 The plasma processing apparatus 1 shown has a chamber 10. Figure 2is a view that shows a chamber inner structure of a plasma processing apparatus according to an example embodiment in detail. As shown in Figure 2 The plasma processing apparatus 1 can be a capacitively coupled plasma processing apparatus, as shown.

[0057] The chamber 10 provides an inner space 10s in its inside. A central axis of the inner space 10s is an axis AX extending in a vertical direction. In an embodiment, the chamber 10 includes a chamber body 12. The chamber body 12 has a substantially cylindrical shape. The inner space 10s is provided by an inside of the chamber body 12. The chamber body 12 is formed of, for example, aluminum. The chamber body 12 is electrically grounded. A film having plasma resistance is formed on an inner wall surface of the chamber body 12, i.e., a wall surface that defines the inner space 10s. The film can be a film formed by an anodizing process or a ceramic film formed of yttrium oxide, etc.

[0058] A passage 12p is formed in a side wall of the chamber body 12. When a substrate W is transported between the inner space 10s and an outside of the chamber 10, the substrate W passes through the passage 12p. In order to open and close the passage 12p, a gate valve 12g is provided along the side wall of the chamber body 12.

[0059] The plasma processing apparatus 1 further includes a substrate support 16 according to an example embodiment. The substrate support 16 is configured to support a substrate W placed thereon in the inside of the chamber 10. The substrate W has a substantially disc shape. The substrate support 16 is supported by a support portion 17. The support portion 17 extends upward from a bottom of the chamber body 12. The support portion 17 has a substantially cylindrical shape. The support portion 17 is formed of an insulating material such as quartz.

[0060] The substrate support 16 has a susceptor 18 and an electrostatic chuck 20. The susceptor 18 and the electrostatic chuck 20 are provided in the inside of the chamber 10. The susceptor 18 is formed of an electrically conductive material such as aluminum and has a substantially disc shape.

[0061] A flow path 18f is formed in the susceptor 18. The flow path 18f is a flow path for a heat exchange medium. As the heat exchange medium, for example, a liquid refrigerant can be used. A supply device (e.g., a cooling unit) for the heat exchange medium is connected to the flow path 18f. The supply device is provided outside the chamber 10. The heat exchange medium is supplied from the supply device to the flow path 18f via a pipe 23a. The heat exchange medium supplied to the flow path 18f is returned to the supply device via a pipe 23b.

[0062] An electrostatic chuck 20 is provided on the base 18. The substrate W is placed on the electrostatic chuck 20 and held by the electrostatic chuck 20 while being processed in the internal space 10s. In addition, an edge ring ER is mounted on the substrate support 16. The edge ring ER is a plate having a substantially annular shape. The edge ring ER has electrical conductivity. The edge ring ER is formed of, for example, silicon or silicon carbide. The edge ring ER is mounted on the substrate support 16 so that the central axis thereof coincides with the axis AX. The substrate W housed in the chamber 10 is disposed in an area on the electrostatic chuck 20 and surrounded by the edge ring ER.

[0063] The plasma processing apparatus 1 can further include a gas supply passage 25. The gas supply passage 25 supplies a heat transfer gas such as He gas from a gas supply mechanism to a gap between the upper surface of the electrostatic chuck 20 (a first electrostatic chuck area described later) and the back surface (lower surface) of the substrate W.

[0064] The plasma processing apparatus 1 can further include a peripheral portion 28 and a peripheral portion 29. The peripheral portion 28 extends upward from the bottom of the chamber main body 12. The peripheral portion 28 has a substantially cylindrical shape and extends along the outer periphery of the support portion 17. The peripheral portion 28 is formed of an electrically conductive material and has a substantially cylindrical shape. The peripheral portion 28 is electrically grounded. A film having plasma resistance is formed on the surface of the peripheral portion 28. The film can be a film formed by an anodizing treatment or a ceramic film such as a film formed of yttrium oxide.

[0065] The peripheral portion 29 is provided on the peripheral portion 28. The peripheral portion 29 is formed of a material having insulation. The peripheral portion 29 is formed of, for example, a ceramic such as quartz. The peripheral portion 29 has a substantially cylindrical shape. The peripheral portion 29 extends along the outer periphery of the base 18 and the electrostatic chuck 20.

[0066] The plasma processing apparatus 1 further includes an upper electrode 30. The upper electrode 30 is provided above the substrate support 16. The upper electrode 30 closes the upper opening of the chamber main body 12 together with a member 32. The member 32 has insulation. The upper electrode 30 is supported to the upper portion of the chamber main body 12 via the member 32.

[0067] The upper electrode 30 includes a top plate 34 and a support body 36. The lower surface of the top plate 34 defines the internal space 10s. A plurality of gas release holes 34a are formed in the top plate 34. The plurality of gas release holes 34a each pass through the top plate 34 in the plate thickness direction (vertical direction). The top plate 34 is not limited to this and is formed of, for example, silicon. Alternatively, the top plate 34 can have a structure in which a film having plasma resistance is formed on the surface of an aluminum material. The film can be a film formed by an anodizing treatment or a ceramic film such as a film formed of yttrium oxide.

[0068] A support body 36 detachably supports the top plate 34. The support body 36 is formed of a conductive material, such as aluminum. A gas diffusion chamber 36a is formed inside the support body 36. A plurality of gas holes 36b extend downward from the gas diffusion chamber 36a. The plurality of gas holes 36b are connected to a plurality of gas release holes 34a. A gas inlet port 36c is formed in the support body 36. The gas inlet port 36c is connected to the gas diffusion chamber 36a. A gas supply pipe 38 is connected to the gas inlet port 36c.

[0069] Gas supply pipe 38 is connected to gas source group 40 via valve group 41, flow controller group 42, and valve group 43. Gas source group 40, valve group 41, flow controller group 42, and valve group 43 constitute a gas supply unit. Gas source group 40 includes multiple gas sources. Valve group 41 and valve group 43 each include multiple valves (e.g., on / off valves). Flow controller group 42 includes multiple flow controllers. Each of the multiple flow controllers in flow controller group 42 is a mass flow controller or a pressure-controlled flow controller. Each of the multiple gas sources in gas source group 40 is connected to gas supply pipe 38 via a corresponding valve in valve group 41, a corresponding flow controller in flow controller group 42, and a corresponding valve in valve group 43. Plasma processing device 1 is capable of supplying gas from gas sources at individually regulated flow rates to the internal space for 10 seconds, wherein the gas source is one or more gas sources selected from the multiple gas sources in gas source group 40.

[0070] A baffle 48 is provided between the outer periphery 28 and the side wall of the chamber body 12. The baffle 48 can be constructed, for example, by covering an aluminum material with a ceramic such as yttrium oxide. Numerous through holes are formed in the baffle 48. Below the baffle 48, at the bottom of the chamber body 12, an exhaust pipe 52 is connected. This exhaust pipe 52 is connected to an exhaust device 50. The exhaust device 50 has a pressure controller such as an automatic pressure control valve and a vacuum pump such as a turbomolecular pump, capable of reducing the pressure in the internal space 10s.

[0071] The substrate support 16 will now be described in detail. As described above, the substrate support 16 includes a base 18 and an electrostatic chuck 20. Figure 1 As shown, the base 18 is connected to the high-frequency power supply 61 via a matching adapter 62. The high-frequency power supply 61 is a power source for generating high-frequency electrical power for plasma generation. The high-frequency electrical power generated by the high-frequency power supply 61 has a frequency in the range of 27 to 100 MHz, for example, 40 MHz or 60 MHz. The matching adapter 62 has a matching circuit for matching the output impedance of the high-frequency power supply 61 with the impedance of the load side (base 18 side). Alternatively, the high-frequency power supply 61 may not be electrically connected to the base 18, but may be connected to the upper electrode 30 via the matching adapter 62.

[0072] In the plasma processing apparatus 1, when high-frequency electric power from the high-frequency power source 61 is supplied, a gas in the chamber 10 is excited, and a plasma is generated from the gas. The substrate W is processed by chemical species such as ions and / or radicals from the generated plasma.

[0073] The electrostatic chuck 20 has a first electrostatic chuck region 21 and a second electrostatic chuck region 22. The first electrostatic chuck region 21 and the second electrostatic chuck region 22 are provided on the susceptor 18. In the substrate support 16 of the plasma processing apparatus 1, the first electrostatic chuck region 21 and the second electrostatic chuck region 22 are connected to each other and integrated. Further, in the substrate support 16 of the plasma processing apparatus 1, the first electrostatic chuck region 21 and the second electrostatic chuck region 22 are connected to each other and integrated. Figure 1 In the embodiment, a boundary between the first electrostatic chuck region 21 and the second electrostatic chuck region 22 is indicated by a broken line.

[0074] The first electrostatic chuck region 21 is configured to be able to hold the substrate W placed thereon (i.e., on the upper surface thereof). The first electrostatic chuck region 21 is a region having a disc shape. A central axis of the first electrostatic chuck region 21 substantially coincides with the axis AX. The first electrostatic chuck region 21 and the second electrostatic chuck region 22 share a dielectric portion 20d. The dielectric portion 20d is formed of a dielectric such as aluminum nitride, aluminum oxide, or the like. The dielectric portion 20d has a substantially disc shape. In an embodiment, the thickness of the dielectric portion 20d of the second electrostatic chuck region 22 is smaller than the thickness of the dielectric portion 20d of the first electrostatic chuck region 21. The position in the vertical direction of the upper surface of the dielectric portion 20d of the second electrostatic chuck region 22 can be lower than the position in the vertical direction of the upper surface of the dielectric portion 20d of the first electrostatic chuck region 21.

[0075] The first electrostatic chuck region 21 has an electrode 21a (chuck electrode). The electrode 21a is a film-like electrode provided in the dielectric portion 20d of the first electrostatic chuck region 21. The electrode 21a is connected to the direct-current power source 55 via the switch 56. When a direct-current voltage from the direct-current power source 55 is applied to the electrode 21a, electrostatic attraction is generated between the first electrostatic chuck region 21 and the substrate W. With the generated electrostatic attraction, the substrate W is attracted to the first electrostatic chuck region 21 and held by the first electrostatic chuck region 21.

[0076] The first electrostatic chuck region 21 can also have an electrode 21c. The electrode 21c is a film-like electrode provided in the dielectric portion 20d of the first electrostatic chuck region 21. Further, the electrode 21a can extend in the vertical direction closer to the upper surface of the first electrostatic chuck region 21 than the electrode 21c. The electrode 21c is connected to the bias power source 63 via the matcher 64 and the filter 65. Further, the bias power source 63 can also be electrically connected to the susceptor 18 via the matcher 64 and the filter 65. In this case, the first electrostatic chuck region 21 can also not have the electrode 21c.

[0077] The bias power supply 63 generates bias electric power for attracting ions from a plasma generated inside the chamber 10 to the substrate W. The bias electric power generated by the bias power supply 63 can be periodic. In one embodiment, the bias electric power generated by the bias power supply 63 is high-frequency electric power. In this case, the bias electric power generated by the bias power supply 63 has a frequency lower than the frequency of the high-frequency electric power generated by the high-frequency power supply 61. The frequency of the bias electric power generated by the bias power supply 63 is a frequency in the range of 400 kHz to 13.56 MHz, for example, 400 kHz.

[0078] The matcher 64 is connected between the bias power supply 63 and the electrode 21c. The matcher 64 is configured to match the output impedance of the bias power supply 63 to the impedance on the load side (the electrode 21c side). The filter 65 is connected between the matcher 64 and the electrode 21c. The filter 65 is an electric filter that cuts off or reduces the high-frequency electric power generated by the high-frequency power supply 61. The filter 65 blocks the high-frequency electric power generated by the high-frequency power supply 61 from flowing into the bias power supply 63, or reduces the high-frequency electric power flowing into the bias power supply 63.

[0079] In another embodiment, the bias electric power generated by the bias power supply 63 can be high-frequency electric power in a pulse shape that is generated periodically. That is, the supply and stop of the supply of the high-frequency electric power to the electrode 21c from the bias power supply 63 can be switched alternately. Also, in yet another embodiment, the bias power supply 63 can be configured to periodically apply a direct-current voltage in a pulse shape and in a negative polarity as the bias electric power to the electrode 21c. In this case, the bias power supply 63 can periodically generate the direct-current voltage in a pulse shape and in a negative polarity at a prescribed period at a frequency of, for example, 400 kHz. The level of the direct-current voltage in a pulse shape and in a negative polarity can vary during the period in which the direct-current voltage in a pulse shape and in a negative polarity is applied to the electrode 21c.

[0080] The first electrostatic chuck region 21 can also have a heater 21h. The heater 21h is provided in the dielectric portion 20d of the first electrostatic chuck region 21. Further, the electrode 21a and the electrode 21c can extend in the vertical direction closer to the upper surface of the first electrostatic chuck region 21 than the heater 21h. The heater 21h can be a resistive heating element. The heater 21h is connected to a heater controller 68. The heater controller 68 supplies electric power to the heater 21h. The heater controller 68 is configured to be able to control the level of the electric power supplied to the heater 21h. Further, the first electrostatic chuck region 21 can have a plurality of heaters.

[0081] The first electrostatic chuck region 21 can also have a portion of a gas supply passage 25. The gas supply passage 25 is a gas passage provided to supply a heat transfer gas such as He gas to a gap between the first electrostatic chuck region 21 and the back surface of the substrate W as described above. The gas supply passage 25 is connected to a gas supply mechanism that is a gas source of the heat transfer gas.

[0082] The second electrostatic chuck region 22 is provided in a manner of surrounding the first electrostatic chuck region 21. The second electrostatic chuck region 22 is a substantially annular region. The central axis of the second electrostatic chuck region 22 substantially coincides with the axis AX. The second electrostatic chuck region 22 is configured to hold the edge ring ER placed thereon (i.e., on the upper surface thereof). The second electrostatic chuck region 22 and the first electrostatic chuck region 21 share the dielectric portion 20d.

[0083] The second electrostatic chuck region 22 has one or more electrodes. The one or more electrodes generate electrostatic attraction between the edge ring ER and the second electrostatic chuck region 22, and are provided in the second electrostatic chuck region 22 to supply bias electric power to the edge ring ER through the second electrostatic chuck region 22. The one or more electrodes are provided in the second electrostatic chuck region 22 in the dielectric portion 20d.

[0084] In one embodiment, the second electrostatic chuck region 22 includes a first electrode and a second electrode. The first electrode is an electrode for which a voltage is applied to generate electrostatic attraction. The second electrode is an electrode for which bias electric power is supplied.

[0085] In one embodiment, the second electrostatic chuck region 22 constitutes a bipolar-type electrostatic chuck. That is, the second electrostatic chuck region 22 contains a pair of electrodes that constitute a bipolar electrode. Specifically, in the substrate support 16 of the plasma processing apparatus 1, the second electrostatic chuck region 22 has an electrode 22a and an electrode 22b as a pair of first electrodes that constitute a bipolar electrode. The electrode 22a and the electrode 22b are each a film-like electrode. The electrode 22a and the electrode 22b can extend at substantially the same height position in the vertical direction.

[0086] The electrode 22a is connected to the direct current power supply 71 via the switch 72 and the filter 73. The filter 73 is an electric filter that cuts off or reduces high-frequency electric power and bias electric power. The filter 73 blocks the high-frequency electric power and the bias electric power from flowing into the direct current power supply 71, or reduces the high-frequency electric power and the bias electric power flowing into the direct current power supply 71.

[0087] The electrode 22b is connected to the DC power supply 74 via the switch 75 and the filter 76. The filter 76 is an electrical filter that cuts off or reduces the high-frequency electric power and the bias electric power. The filter 76 prevents the high-frequency electric power and the bias electric power from flowing into the DC power supply 74, or reduces the high-frequency electric power and the bias electric power flowing into the DC power supply 74.

[0088] The DC power supply 71 and the DC power supply 74 apply DC voltages to the electrode 22a and the electrode 22b, respectively, to generate a potential difference between the electrode 22a and the electrode 22b. In addition, the set potential of each of the electrode 22a and the electrode 22b can be any one of a positive potential, a negative potential, and 0 V. For example, the potential of the electrode 22a can be set to a positive potential, and the potential of the electrode 22b can be set to a negative potential. In addition, the potential difference between the electrode 22a and the electrode 22b can also be formed using one DC power supply without using two DC power supplies.

[0089] When the potential difference is generated between the electrode 22a and the electrode 22b, electrostatic attraction is generated between the second electrostatic chuck region 22 and the edge ring ER. The edge ring ER is attracted to the second electrostatic chuck region 22 by the generated electrostatic attraction and is held by the second electrostatic chuck region 22.

[0090] The second electrostatic chuck region 22 also has an electrode 22c as a second electrode. The electrode 22c is a film-shaped electrode that is provided in the dielectric portion 20d of the second electrostatic chuck region 22. In addition, the electrode 22a and the electrode 22b can extend in the vertical direction closer to the upper surface of the second electrostatic chuck region 22 than the electrode 22c. The electrode 22c is connected to the bias power supply 81 via the matcher 82 and the filter 83.

[0091] The bias power supply 81 is a power supply that generates bias electric power. The bias electric power generated by the bias power supply 81 can be high-frequency electric power having the same frequency as the high-frequency electric power generated by the bias power supply 63. Alternatively, the bias power supply 81 can also periodically generate a pulse-shaped DC voltage of a negative polarity as the bias electric power, like the bias power supply 63. The matcher 82 is configured to match the output impedance of the bias power supply 81 to the impedance on the load side (the electrode 22c side). The filter 83 is connected between the matcher 82 and the electrode 22c. The filter 83 is an electrical filter that cuts off or reduces the high-frequency electric power generated by the high-frequency power supply 61. The filter 83 prevents the high-frequency electric power generated by the high-frequency power supply 61 from flowing into the bias power supply 81, or reduces the high-frequency electric power flowing into the bias power supply 81.

[0092] The second electrostatic chuck region 22 can also have a heater 22h. The heater 22h is provided in the dielectric portion 20d of the second electrostatic chuck region 22. Further, the electrode 22a, the electrode 22b, and the electrode 22c can extend in the vertical direction at a position closer to the upper surface of the second electrostatic chuck region 22 than the heater 22h. The heater 22h can be a resistance heating element. The heater 22h is connected to a heater controller 85. The heater controller 85 supplies electric power to the heater 22h. The heater controller 85 is configured to be able to control the level of electric power supplied to the heater 22h. Further, the second electrostatic chuck region 22 can have a plurality of heaters. Further, the heater 21h and the heater 22h can be supplied with electric power from the same and the same heater controller.

[0093] The second electrostatic chuck region 22 can also have a gas passage 22g. The gas passage 22g is a gas passage provided to supply a heat transfer gas such as He gas between the second electrostatic chuck region 22 and the edge ring ER. The gas passage 22g is connected to a gas supply mechanism 86 that is a gas source of the heat transfer gas.

[0094] In one embodiment, as shown in Figure 2 The control section MC is a computer including a processor, a storage device, an input device, a display device, and the like, and controls each section of the plasma processing apparatus 1. Specifically, the control section MC executes a control program stored in the storage device, and controls each section of the plasma processing apparatus 1 based on recipe data stored in the storage device. By the control of the control section MC, a process specified by the recipe data is executed in the plasma processing apparatus 1.

[0095] In the substrate support 16 of the plasma processing apparatus 1, the electrode 22a, the electrode 22b, and the electrode 22c are provided in the second electrostatic chuck region 22. Therefore, in a state where the edge ring ER is held by the second electrostatic chuck region 22, the bias electric power can be supplied to the edge ring ER by the second electrostatic chuck region 22. Thus, the substrate support 16 of the plasma processing apparatus 1 provides a structure capable of independently and stably supplying the bias electric power to the edge ring ER.

[0096] Further, in the substrate support 16 of the plasma processing apparatus 1, the first electrostatic chuck region 21 has the electrode 21c, and the second electrostatic chuck region 22 has the electrode 22c. The bias electric power is supplied to the electrode 21c and the electrode 22c individually. Therefore, the bias electric power supplied to the substrate W by the first electrostatic chuck region 21 and the bias electric power supplied to the edge ring ER by the second electrostatic chuck region 22 can be controlled independently of each other.

[0097] Hereinafter, the Figure 3 will be described with reference to the drawings.Figure 3 is a view schematically showing a plasma processing apparatus of another example embodiment. Hereinafter, in aspects in which the plasma processing apparatus 1 differs from the plasma processing apparatus IB, the description will be given Figure 3 the plasma processing apparatus IB shown in FIG. 8.

[0098] In the plasma processing apparatus IB, the electrode to which the voltage is applied and the electrode to which the bias electric power is supplied are common electrodes to generate electrostatic attraction between the second electrostatic chuck region 22 and the edge ring ER. Specifically, in the plasma processing apparatus IB, the bias power supply 81 is connected to both the electrode 22a and the electrode 22b via the matcher 82 and the filter 83. In the plasma processing apparatus IB, the bias electric power from the bias power supply 81 is distributed to the electrode 22a and the electrode 22b.

[0099] The bias power supply 81 can be connected to the electrode 22a via a blocking condenser 87. Further, the bias power supply 81 can be connected to the electrode 22b via a blocking condenser 88. The blocking condensers 87 and 88 block or reduce the direct current from flowing into the bias power supply 81.

[0100] In the substrate support 16 of the plasma processing apparatus IB, the electrode 22a and the electrode 22b to which the voltage is applied to generate the electrostatic attraction are supplied with the bias electric power. Therefore, it is possible to omit the dedicated electrode 22c for supplying the bias electric power thereto from the second electrostatic chuck region 22. As a result, the structure of the second electrostatic chuck region 22 can be a simple structure. As a result, the substrate support 16 of the plasma processing apparatus IB can be manufactured at low cost and easily.

[0101] Further, in the substrate support 16 of the plasma processing apparatus IB, it is possible to shorten the distance between each of the electrode 22a and the electrode 22b to which the bias electric power is supplied and the edge ring ER. Therefore, the electrostatic capacitance between each of the electrode 22a and the electrode 22b and the edge ring ER becomes large. As a result, the bias electric power coupled to the edge ring ER from the electrode 22a and the electrode 22b increases. On the other hand, the bias electric power supplied to the substrate W from the electrode 22a and the electrode 22b decreases. Therefore, the independent controllability of the bias electric power supplied to the edge ring ER becomes high.

[0102] Hereinafter, the description will be given with reference to Figure 4 . Figure 4 is a view schematically showing a plasma processing apparatus of another example embodiment. Hereinafter, in aspects in which the plasma processing apparatus IB differs from the plasma processing apparatus IC, the description will be given Figure 4 the plasma processing apparatus IC shown in FIG. 9.

[0103] In the plasma processing apparatus 1C, the bias power supply 63 is connected with the susceptor 18 via the matcher 64. In the plasma processing apparatus 1C, the bias electric power from the bias power supply 63 and the bias electric power from the bias power supply 81 are supplied to the edge ring ER through the second electrostatic chuck region 22. Therefore, it is possible to reduce the bias electric power supplied from the bias power supply 81.

[0104] Hereinafter, referring to Figure 5 . Figure 5 is a view schematically showing a plasma processing apparatus of still another example embodiment. Hereinafter, in aspects different from the plasma processing apparatus 1C, the plasma processing apparatus 1D is described with reference to Figure 5 illustrated in FIG. 1D.

[0105] The plasma processing apparatus 1D further includes a high-frequency power supply 91. The high-frequency power supply 91 is connected with the electrode 22a via the matcher 92, the filter 83, and the direct-current blocking capacitor 87. Further, the high-frequency power supply 91 is connected with the electrode 22b via the matcher 92, the filter 83, and the direct-current blocking capacitor 88. The high-frequency power supply 91 generates high-frequency electric power having the same frequency as the frequency of the high-frequency electric power generated by the high-frequency power supply 61. In the plasma processing apparatus 1D, the high-frequency electric power from the high-frequency power supply 91 is coupled with the plasma through the second electrostatic chuck region 22 and the edge ring ER. As a result, it is possible to independently control the density of the plasma in the region above the edge ring with respect to the density of the plasma in the region above the substrate W.

[0106] Further, in the plasma processing apparatus 1D, in a case where the second electrostatic chuck region 22 has the electrode 22c, the high-frequency power supply 91 and the bias power supply 81 can be connected with the electrode 22c as well.

[0107] Hereinafter, referring to Figure 6 . Figure 6 is a view schematically showing a plasma processing apparatus of still another example embodiment. Hereinafter, in aspects different from the plasma processing apparatus 1C, the plasma processing apparatus 1D is described with reference to Figure 6 illustrated in FIG. 1D.

[0108] The plasma processing apparatus 1E includes a common electrical bus 100, a first electrical bus 101, and a second electrical bus 102. The common electrical bus 100 is connected with the high-frequency power source 61 and the bias power source 63. The first electrical bus 101 and the second electrical bus 102 branch from the common electrical bus 100. The first electrical bus 101 is connected with the susceptor 18. The second electrical bus 102 is connected with the electrode 22a via the blocking capacitor 87. Further, the second electrical bus 102 is connected with the electrode 22b via the blocking capacitor 88. In the plasma processing apparatus 1E, the high-frequency electric power from the high-frequency power source 61 and the bias electric power from the bias power source 63 are distributed to the susceptor 18, the electrode 22a, and the electrode 22b. Therefore, the plasma processing apparatus 1E can also not provide the bias power source 81, the matcher 82, and the filter 83.

[0109] An impedance circuit 103 is provided on the second electrical bus 102. The impedance circuit 103 can have a variable impedance element. As the variable impedance element, a variable motional capacitor can be exemplified. By adjusting the impedance of the impedance circuit 103, the ratio of the bias electric power supplied from the bias power source 63 to the electrode 22a and the electrode 22b to the bias electric power supplied from the bias power source 63 to the susceptor 18 can be adjusted. Further, by adjusting the impedance of the impedance circuit 103, the ratio of the high-frequency electric power supplied from the high-frequency power source 61 to the electrode 22a and the electrode 22b to the high-frequency electric power supplied from the high-frequency power source 61 to the susceptor 18 can be adjusted. In the above-described plasma processing apparatus 1E, the number of bias power sources can be reduced compared with the plasma processing apparatus 1C. Therefore, the plasma processing apparatus 1E can be provided at a relatively low cost.

[0110] Further, the same impedance circuit as the impedance circuit 103 can be provided on the first electrical bus 101. In the case where the impedance circuit is provided on the first electrical bus 101, the impedance circuit 103 can be provided on the second electrical bus 102 or can not be provided on the second electrical bus 102.

[0111] Further, in the plasma processing apparatus 1E, in the case where the second electrostatic chuck region 22 has the electrode 22c, the high-frequency power source 61 and the bias power source 63 can be connected with the electrode 22c via the second electrical bus 102.

[0112] Hereinafter, the plasma processing apparatus 1E will be described with reference to Figure 7 . Figure 7 is a view schematically showing another example of the plasma processing apparatus. Hereinafter, the plasma processing apparatus 1F shown in Figure 7 will be described in aspects different from the plasma processing apparatus 1D.

[0113] In the substrate support 16 of the plasma processing apparatus 1F, the first electrostatic chuck region 21 has a first dielectric portion 21d, and the second electrostatic chuck region 22 has a second dielectric portion 22d. The first dielectric portion 21d and the second dielectric portion 22d are each formed of a dielectric such as aluminum nitride or aluminum oxide.

[0114] The first dielectric portion 21d has a substantially disc shape. A central axis of the first dielectric portion 21d substantially coincides with the axis line AX. In the first dielectric portion 21d, the electrode 21a and the heater 21h are provided.

[0115] The second dielectric portion 22d extends in a manner of surrounding the first dielectric portion 21d. The second dielectric portion 22d is a substantially annular plate. A central axis of the second dielectric portion 22d substantially coincides with the axis line AX. In the second dielectric portion 22d, the electrode 22a, the electrode 22b, and the heater 22h are provided. In an embodiment, the thickness of the second dielectric portion 22d is smaller than the thickness of the first dielectric portion 21d. The position in the vertical direction of the upper surface of the second dielectric portion 22d can also be lower than the position in the vertical direction of the upper surface of the first dielectric portion 21d.

[0116] In the substrate support 16 of the plasma processing apparatus 1F, the first dielectric portion 21d and the second dielectric portion 22d are separated from each other. That is, a gap is present between the first dielectric portion 21d and the second dielectric portion 22d.

[0117] Further, in the substrate support 16 of the plasma processing apparatus 1F, the susceptor 18 is separated into a first portion 181 and a second portion 182. That is, a gap is present between the first portion 181 and the second portion 182. The first portion 181 is electrically connected to the high-frequency power source 61 and the bias power source 63. The first portion 181 supports the first electrostatic chuck region 21 provided thereon. The second portion 182 supports the second electrostatic chuck region 22 provided thereon.

[0118] Further, in the case where the electrode 21c is provided in the first dielectric portion 21d of the substrate support 16 of the plasma processing apparatus 1F, the high-frequency power source 61 and the bias power source 63 can be connected to the electrode 21c.

[0119] Next, the plasma processing apparatus 1F will be described with reference to Figure 8 . Figure 8 is a view schematically showing another example embodiment of a plasma processing apparatus. Hereinafter, in aspects in which the plasma processing apparatus 1E differs from the plasma processing apparatus 1G, the plasma processing apparatus 1G shown in Figure 8 will be described.

[0120] In the substrate support 16 of the plasma processing apparatus 1G, as with the substrate support 16 of the plasma processing apparatus 1F, the first electrostatic chuck region 21 has the first dielectric portion 21d, and the second electrostatic chuck region 22 has the second dielectric portion 22d. However, in the substrate support 16 of the plasma processing apparatus 1G, the base 18 is not separated into two portions (the first portion 181 and the second portion 182) as with the base 18 of the substrate support 16 of the plasma processing apparatus 1F. The base 18 of the substrate support 16 of the plasma processing apparatus 1G can be formed with a groove 18g. The groove 18g is open at an upper surface of the base 18. A bottom of the groove 18g is located between the upper end opening of the groove 18g and a lower surface of the base 18. The groove 18g extends between a region of the base 18 on which the first electrostatic chuck region 21 extends and a region of the base 18 on which the second electrostatic chuck region 22 extends.

[0121] Hereinafter, with reference to Figure 9 . Figure 9 is a view schematically showing a plasma processing apparatus of still another example embodiment. Hereinafter, in aspects in which the plasma processing apparatus 1E differs from the plasma processing apparatus 1H, the plasma processing apparatus 1H shown in Figure 9 is described.

[0122] In the plasma processing apparatus 1H, the first electrical bus 101 is connected to the electrode 21a. The first electrical bus 101 includes a capacitor 110. The capacitor 110 can be a fixed capacitor or a variable capacitor. The capacitor 110 can prevent or reduce a flow of a direct current into the bias power supply 81. Further, the capacitor 110 can adjust a distribution ratio of each of the high-frequency electric power between the electrode 22a and the electrode 22b and the bias electric power between the electrode 21a.

[0123] In addition, in the plasma processing apparatus 1H, a filter 112 can be connected between the direct current power supply 55 and the electrode 21a. The filter 112 is an electrical filter that cuts off or reduces the high-frequency electric power generated by the high-frequency power supply 61 and the bias electric power generated by the bias power supply 63. The filter 112 prevents or reduces the high-frequency electric power generated by the high-frequency power supply 61 and the bias electric power generated by the bias power supply 63 from flowing into the direct current power supply 55.

[0124] Hereinafter, with reference to Figure 10 . Figure 10 is a view schematically showing a plasma processing apparatus of still another example embodiment. Hereinafter, in aspects in which the plasma processing apparatus 1E differs from the plasma processing apparatus 1H, the plasma processing apparatus 1H shown in Figure 10In the plasma processing apparatus 1J shown, the high-frequency power source 61 is electrically connected to the susceptor 18, which is different from the plasma processing apparatus 1H. The other configurations of the plasma processing apparatus 1J are the same as the corresponding configurations of the plasma processing apparatus 1H.

[0125] Hereinafter, referring to Figure 11 . Figure 11 is a view schematically showing a plasma processing apparatus of still another example embodiment. Hereinafter, referring to Figure 11 In the plasma processing apparatus 1K shown, the bias power source 63 is electrically connected to the heater 21h and the heater 22h, which is different from the plasma processing apparatus 1J. The other configurations of the plasma processing apparatus 1H are the same as the corresponding configurations of the plasma processing apparatus 1J.

[0126] Hereinafter, referring to Figure 12 (a) of FIG. 10, Figure 12 (b) of FIG. 11, and Figure 12 (c) of FIG. 12. Figure 12 (a) of FIG. 10 is a partial enlarged view showing another example of the first electrostatic chuck region, Figure 12 (b) of FIG. 11, and Figure 12 (c) of FIG. 12 each are a partial enlarged view showing another example of the second electrostatic chuck region. As shown in Figure 12 (a) of FIG. 10, in the first electrostatic chuck region 21 of the substrate support 16 of the above-described various example embodiments, the respective positions in the height direction of the electrode 21a and the electrode 21c can be the same as each other. Further, as shown in Figure 12 (b) of FIG. 11, and Figure 12 (c) of FIG. 12, in the second electrostatic chuck region 22 of the substrate support 16 of the above-described various example embodiments, the respective positions in the height direction of the electrode 22a, the electrode 22b, and the electrode 22c can be the same as each other. As shown in Figure 12 (b) of FIG. 11, the electrode 22c can be disposed between the electrode 22a and the electrode 22b in the horizontal direction. Or, as shown in Figure 12 (c) of FIG. 12, the electrode 22b can be disposed between the electrode 22a and the electrode 22c in the horizontal direction. Further, in the substrate support 16 having the second electrostatic chuck region 22 shown in Figure 12 (b) of FIG. 11, and Figure 12 Figure 12 (c) of FIG. 12, the electrode 21c of the first electrostatic chuck region 21 can extend at the same position in the height direction as the electrode 22c.

[0127] The above-described various example embodiments have been described, but are not limited to the above-described example embodiments, and various omissions, substitutions, and changes can be made. Further, elements in different example embodiments can be combined to form other example embodiments.

[0128] For example, the substrate support 16 can have only one of the above-described first electrostatic chuck region 21 and the second electrostatic chuck region 22, or can have both of them. That is, the substrate support 16 can include only a dielectric portion and at least one electrode. The at least one electrode is provided in the dielectric portion to supply a bias electric power to an object placed on the dielectric portion. The object is at least one of the substrate W or the edge ring ER. The at least one electrode can include only an electrode provided in the dielectric portion in the first electrostatic chuck region 21. Alternatively, the at least one electrode can include only an electrode provided in the dielectric portion in the second electrostatic chuck region 22. Alternatively, the at least one electrode can include both of an electrode provided in the dielectric portion in the first electrostatic chuck region 21 and an electrode provided in the dielectric portion in the second electrostatic chuck region 22. As the electrode provided in the dielectric portion in the first electrostatic chuck region 21, an electrode such as the electrode 21a, the electrode 21c, or the heater 21h can be exemplified. As the electrode provided in the dielectric portion in the second electrostatic chuck region 22, an electrode such as the electrode 22a, the electrode 22b, the electrode 22c, or the heater 22h can be exemplified.

[0129] In addition, the second electrostatic chuck region 22 can be a single-pole type electrostatic chuck. That is, the second electrostatic chuck region 22 can not have a pair of electrodes that constitute a bipolar electrode, but can have one or more electrodes to which one voltage is applied to generate an electrostatic attractive force.

[0130] In addition, the first electrostatic chuck region and the second electrostatic chuck region 21, 22 and the susceptor 18 of each of the plasma processing apparatuses IE, IH can be configured in the same manner as the first electrostatic chuck region and the second electrostatic chuck region 21, 22 and the susceptor 18 of the plasma processing apparatus IF.

[0131] In addition, the first electrostatic chuck region and the second electrostatic chuck region 21, 22 and the susceptor 18 of each of the plasma processing apparatuses 1, IB, 1C, ID, IE, IH, IJ, IK can be configured in the same manner as the first electrostatic chuck region and the second electrostatic chuck region 21, 22 and the susceptor 18 of the plasma processing apparatus IG.

[0132] In addition, the plasma processing apparatus having the substrate support 16 of the above-described various embodiments can be any type of plasma processing apparatus. Such a plasma processing apparatus is, for example, an inductively coupled type plasma processing apparatus, an electron cyclotron resonance (ECR) plasma processing apparatus, or a plasma processing apparatus that generates plasma by a surface wave such as a microwave.

[0133] In the specification, various embodiments of the application have been described with reference to the above illustration, and various modifications can be made without departing from the scope and spirit of the application. Therefore, the various embodiments disclosed in the specification are not intended to be limiting, and the true scope and spirit of the application are given by the scope of the claims attached hereto.

Claims

1. A plasma processing apparatus characterized by comprising: comprises: a chamber; a substrate support disposed in the chamber, including: a dielectric portion; at least one electrode disposed in the dielectric portion for supplying a bias electric power to an object placed on the dielectric portion; a first electrostatic chuck region configured to hold a substrate placed thereon; a second electrostatic chuck region configured to be disposed in a manner of surrounding the first electrostatic chuck region and to hold an edge ring placed thereon; one or more electrodes disposed in the second electrostatic chuck region for generating an electrostatic attractive force between the second electrostatic chuck region and the edge ring and for supplying the bias electric power to the edge ring through the second electrostatic chuck region, the one or more electrodes including the at least one electrode; and another electrode disposed in the first electrostatic chuck region, the another electrode being capable of being supplied with the bias electric power; a direct current power supply configured to generate a voltage for generating the electrostatic attractive force between the second electrostatic chuck region and the edge ring; a bias power supply configured to generate the bias electric power; a common electrical bus connected to the bias power supply; a first electrical bus branched from the common electrical bus for the bias electric power supplied to the another electrode; a second electrical bus branched from the common electrical bus for the bias electric power supplied to the edge ring through the second electrostatic chuck region; and an impedance circuit provided on at least one of the first electrical bus and the second electrical bus, the bias electric power supplied to the edge ring through the second electrostatic chuck region and the bias electric power supplied to the another electrode are generated by distributing the bias electric power generated by the bias power supply to the first electrical bus and the second electrical bus.

2. The plasma processing apparatus according to claim 1, wherein: the at least one electrode is a common electrode for applying a voltage thereto to generate the electrostatic attractive force and for supplying the bias electric power thereto.

3. The plasma processing apparatus according to claim 1, wherein: the one or more electrodes include: a first electrode for applying a voltage thereto to generate the electrostatic attractive force; and a second electrode for supplying the bias electric power thereto, the second electrode is the at least one electrode.

4. The plasma processing apparatus according to any one of claims 1 to 3, wherein: the second electrostatic chuck region is a bipolar-type electrostatic chuck.

5. The plasma processing apparatus according to any one of claims 1 to 3, wherein: the second electrostatic chuck region is a unipolar-type electrostatic chuck.

6. The plasma processing apparatus according to any one of claims 1 to 3, wherein: the second electrostatic chuck region further has at least a portion of the dielectric portion, the one or more electrodes are disposed in the at least a portion of the dielectric portion.

7. The plasma processing apparatus according to claim 6, wherein: The first electrostatic chuck region and the second electrostatic chuck region share the dielectric portion, The first electrostatic chuck region has a chuck electrode disposed in the dielectric portion, the chuck electrode being capable of being applied with a voltage for chucking the substrate to the first electrostatic chuck region.

8. The plasma processing apparatus of claim 6, wherein: The first electrostatic chuck region includes: a first dielectric portion; and a chuck electrode disposed in the first dielectric portion, the chuck electrode being capable of being applied with a voltage for chucking the substrate to the first electrostatic chuck region, a second dielectric portion separated from the first dielectric portion, the second dielectric portion being the dielectric portion that the second electrostatic chuck region has.

9. The plasma processing apparatus of claim 6, wherein: It further includes a heater disposed in the dielectric portion that the second electrostatic chuck region has.

10. The plasma processing apparatus of any one of claims 1 to 3, wherein: It further includes a gas passage for supplying a heat transfer gas between the second electrostatic chuck region and the edge ring.

11. The plasma processing apparatus of any one of claims 1 to 3, wherein: It further includes a pedestal having an electric conductivity for being supplied with a bias electric power, The first electrostatic chuck region and the second electrostatic chuck region are disposed on the pedestal.

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