Nanosilver conductive film and large-size nanosilver capacitive screen

By adjusting the laser pattern line distance in the middle part in the direction of the conductive film TX, the nano-silver wire sputtering problem caused by current impact in large-sized nano-silver capacitor screens is solved, and a more stable contact resistance and a longer service life of the capacitance screen are achieved.

CN112506385BActive Publication Date: 2025-08-08SHENZHEN HUAKE COMM TECH CO LTD
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Patent Information

Application Number
CN202011389038.4
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2020-12-01
Publication Date
2025-08-08
Estimated Expiration
2040-12-01

AI Technical Summary

Technical Problem

In existing large-size nano-silver capacitor screens, current impact in the TX direction of the conductive film can easily lead to nano-silver wire sputtering and contact resistance, affecting the touch effect and service life.

Method used

In the direction of the conductive film TX, the linear distance of the laser pattern in the middle part is widened by 0.2-0.3 mm, forming a difference in linear distance between the middle part and the edge part, expanding the area of current passing, reducing the current impact intensity, and maintaining the nano-silver wire connection strength and form.

Benefits of technology

It effectively reduces the failure efficiency of the nano-silver film channel, maintains the current intensity, extends the service life of the capacitance screen and maintains good touch control effects.

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Abstract

The present invention relates to the field of nanosilver conductive films, and in particular to a nanosilver conductive film and a large-scale nanosilver capacitive screen capable of reducing the failure rate of nanosilver film channels. The nanosilver conductive film of the present invention is etched with a TX direction laser pattern and an RX direction laser pattern, respectively. The conductive film is divided into a middle portion and an edge portion along the TX direction, and the line spacing of the TX direction laser pattern in the middle portion is greater than the line spacing of the TX direction laser pattern in the edge portion. By slightly expanding the line spacing of the middle portion of the TX direction etched laser pattern, the present invention can weaken the damage to the nanosilver morphology caused by current shock while maintaining current intensity and not affecting the touch effect. This can more effectively maintain the connection strength and morphology of the nanosilver wires, reduce the failure rate of the nanosilver wire layer in the middle portion of the TX direction conductive film, and thus control the resistance within a stable range, thereby extending the service life of the capacitive screen.
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Description

Technical Field

[0001] The present invention relates to the field of nanosilver conductive films, and in particular to a nanosilver conductive film capable of reducing the failure rate of nanosilver film channels and a large-size nanosilver capacitive screen. Background Art

[0002] With the continuous advancement of technology, touch screens, as a simple and convenient means of human-computer interaction, have become widely used in various areas of our daily lives. At the same time, as people's demands continue to increase, touch screens are developing in the direction of large size, high resolution, lightness, thinness, flexibility, and low cost. Silver nanowires, due to their high conductivity and excellent flexibility, are the best choice for transparent electrode materials for ultra-large, flexible touch screens.

[0003] In the existing large-size nano-silver capacitive screen, the conductive film RX direction is unilaterally energized, and the conductive film TX direction adopts a bilateral energization method due to its large horizontal width; the existing laser pattern etched in the TX direction is of equal width and equal distance, such as Figure 1 As shown in the figure, when the conductive film is energized in the TX direction, the instantaneous value of the bidirectional current flowing in the middle position of the etched channel (equal width and equal distance) increases. The current impact at the intersection can easily cause the nano silver wires there to sputter into small wire rods, which deteriorates the physical connection between the silver wires and reduces the contact area, increasing the contact resistance at this location and easily affecting the touch effect. Summary of the Invention

[0004] In response to the above technical problems, the present invention provides a nanosilver conductive film and a large-size nanosilver capacitive screen. By adjusting the TX direction laser pattern, the failure rate of the nanosilver film channel is reduced, thereby solving the problem of easy failure of the touch point in the middle of the existing large-size capacitive screen, reducing the contact resistance at this location, and effectively extending the service life of the capacitive screen.

[0005] The present invention adopts the following technical solutions:

[0006] A nanosilver conductive film is etched with a TX direction laser pattern and an RX direction laser pattern respectively. The conductive film is divided into a middle part and an edge part along the TX direction. The line spacing of the TX direction laser pattern in the middle part is larger than the line spacing of the TX direction laser pattern in the edge part.

[0007] Furthermore, the line spacing of the laser pattern in the middle portion in the TX direction is wider by 0.2-0.3 mm than the line spacing of the laser pattern in the edge portion in the TX direction.

[0008] Furthermore, in the 75-inch conductive film, the line pitch of the laser pattern in the TX direction in the middle portion is 0.2 mm wider than the line pitch of the laser pattern in the TX direction in the edge portion.

[0009] Furthermore, in the 86-inch conductive film, the line pitch of the laser pattern in the middle portion in the TX direction is wider by 0.2-0.24 mm than the line pitch of the laser pattern in the edge portion in the TX direction.

[0010] Furthermore, in the 98-inch conductive film, the line pitch of the laser pattern in the middle portion in the TX direction is wider by 0.24-0.3 mm than the line pitch of the laser pattern in the edge portion in the TX direction.

[0011] Furthermore, the middle portion occupies 20-22% of the range of the conductive film in the TX direction.

[0012] The present invention also provides a large-size nano-silver capacitive screen, comprising a substrate and the above-mentioned nano-silver conductive film arranged on the substrate.

[0013] The nanosilver conductive film and large-size nanosilver capacitive screen of the present invention can weaken the damage to the nanosilver morphology caused by current impact while maintaining current intensity and not affecting the touch effect by slightly expanding the line spacing of the middle part of the laser pattern etched in the TX direction. This can more effectively maintain the connection strength and morphology of the nanosilver wires, reduce the failure rate of the nanosilver wire layer in the middle part of the conductive film in the TX direction, and thus control the square resistance within a stable range, thereby extending the service life of the capacitive screen. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0015] Figure 1 Schematic diagram of laser pattern etching of nanosilver conductive film in the prior art;

[0016] Figure 2 Schematic diagram of laser pattern etching in the TX direction of the nanosilver conductive film of the present invention;

[0017] Figure 3 This is a SEM image of the nanosilver conductive film after power is applied in Example 1 of the present invention;

[0018] Figure 4 This is a SEM image of the nanosilver conductive film after power is applied in Comparative Example 1 of the present invention. DETAILED DESCRIPTION

[0019] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making any creative efforts are within the scope of protection of the present invention.

[0020] An embodiment of the present invention provides a nanosilver conductive film, on which a TX direction laser pattern and an RX direction laser pattern are etched respectively. The conductive film is divided into a middle portion and an edge portion along the TX direction. The line spacing H1 of the TX direction laser pattern in the middle portion is greater than the line spacing H2 of the TX direction laser pattern in the edge portion. Figure 2 shown.

[0021] By adjusting the etching lines in the middle portion of the conductive film in the TX direction, the present invention expands the effective touch area in this area without affecting the touch effect or delay effect. Specifically, when current flows through this area, the increased flow area reduces the current impact intensity, effectively reducing damage to the silver nanowire morphology and maintaining the silver nanowire bonding strength, thereby keeping the contact resistance in this area within a stable range.

[0022] Specifically, in some embodiments of the present invention, the line spacing of the laser pattern in the central portion (TX direction) is 0.2-0.3 mm wider than that of the laser pattern in the edge portion (TX direction). This invention maintains the required line spacing while maintaining current intensity while only improving the etching path. This effectively expands the laser area in the center of the capacitive touch screen, thereby reducing the damage to the silver nanowire morphology caused by current shock intensity.

[0023] Specifically, as Example 1 of the present invention, in a 75-inch conductive film, the line pitch of the laser pattern in the middle portion in the TX direction is 0.2 mm wider than the line pitch of the laser pattern in the edge portion in the TX direction. For example, the line pitch width in the middle portion is adjusted from the original line pitch of 1.6 mm to 1.8 mm.

[0024] Specifically, as Example 2 of the present invention, in an 86-inch conductive film, the line pitch of the laser pattern in the middle portion in the TX direction is wider by 0.2-0.24 mm than the line pitch of the laser pattern in the edge portion in the TX direction. For example, the line pitch width in the middle portion is adjusted from the original line pitch of 1.6 mm to 1.84 mm.

[0025] Specifically, as Example 3 of the present invention, in a 98-inch conductive film, the line pitch of the laser pattern in the middle portion in the TX direction is wider by 0.24-0.3 mm than the line pitch of the laser pattern in the edge portion in the TX direction. For example, the line pitch width in the middle portion is adjusted from the original line pitch of 1.6 mm to 1.9 mm.

[0026] Specifically, in some embodiments of the present invention, the middle portion occupies 20-22% of the range of the conductive film in the TX direction.

[0027] More specifically, in Example 1 of the present invention, for a 75-inch laser area: 1687.86mm×956.44mm, the TX direction (1687.86mm) is advanced 674mm to the left and right, and the remaining 339.86mm is the middle area of the widened line spacing.

[0028] More specifically, in Example 2 of the present invention, for the 86-inch laser area: 1933.64mm×1094.46mm, the TX direction (1933.64mm) is advanced 774mm to the left and right of the middle, and the remaining 385.64mm is the middle part of the area with widened line spacing.

[0029] More specifically, in Example 3 of the present invention, for a 98-inch laser area: 2198.85 mm × 1218.35 mm, the TX direction (2198.85 mm) is advanced 880 mm to the left and right of the center, and the remaining 438.85 mm is the middle area of the widened line spacing.

[0030] The widening of the middle portion of the laser pattern in the TX direction in the present invention mainly involves drawing of the laser drawing, and other technical processes do not need to be adjusted. The invention is simple and effective, and does not require adjustment of the original conductive film preparation process and equipment.

[0031] Conductive films of different sizes in Examples 1-3 of the present invention were subjected to power-on tests. At the same time, conductive films of 75 inches, 86 inches, and 98 inches with equidistant line widths in the prior art were subjected to power-on tests as Comparative Examples 1-3. The conductive films after power-on were analyzed using a scanning electron microscope to observe the silver wire breakage in the SEM images. The results are shown in Table 1. The SEM images of Example 1 and Comparative Example 1 after power-on tests are shown in Table 1. Figure 3-4 shown.

[0032] Table 1 Performance test results of conductive film after power-on test

[0033]

[0034] From Table 1 and Figure 3-4 It can be seen that after the conductive film with equidistant line width is energized, the nanosilver wires in the middle part of the etched laser pattern are obviously broken, while after the line spacing in the middle part is widened in this solution, there is no obvious breakage. From the overall SEM image, it can be found that the nanosilver wires in the conductive film obtained in the embodiment of the present invention have significantly fewer breakages than the nanosilver wires in the comparative example.

[0035] The present invention also provides a large-scale nanosilver capacitive screen, comprising a substrate and the nanosilver conductive film described above disposed on the substrate. Capacitive screens were fabricated using the conductive films of Examples 1-3 and Comparative Examples 1-3. The resistance change rate of the capacitive screens was tested, and the results are shown in Table 2.

[0036] Table 2 Capacitive screen performance test results

[0037] Components Resistance change rate Example 1 2-6% Example 2 2-6% Example 3 3-5% Comparative Example 1 8-12% Comparative Example 2 8-12% Comparative Example 3 5-12%

[0038] As can be seen from Table 2, the large-size capacitive screen using the nanosilver conductive film of the present invention effectively reduces the damage to the nanosilver wire morphology caused by current impact by expanding the line width of the middle part, so that the contact resistance is maintained in a stable range and has a good touch effect.

[0039] The present invention is further described above with the aid of specific embodiments. However, it should be understood that the specific description herein should not be construed as limiting the essence and scope of the present invention. Various modifications made to the above embodiments by ordinary technicians in this field after reading this specification are all within the scope of protection of the present invention.

Claims

1. A nano-silver conductive film, applied to large-size nano-silver capacitive screens, characterized in that: The conductive film is etched with a TX direction laser pattern and an RX direction laser pattern, respectively. The conductive film adopts unilateral power supply in the RX direction. The conductive film has a large lateral width in the TX direction and adopts bilateral power supply. The conductive film is divided into a middle part and an edge part along the TX direction. The line spacing of the laser pattern in the TX direction of the middle part is greater than the line spacing of the laser pattern in the TX direction of the edge part. The line spacing of the laser pattern in the TX direction of the middle part is 0.2-0.3mm wider than the line spacing of the laser pattern in the TX direction of the edge part. The middle part occupies 20-22% of the TX direction range of the conductive film.

2. The nanosilver conductive film according to claim 1, wherein In the 75-inch conductive film, the line pitch of the laser pattern in the middle portion in the TX direction is 0.2 mm wider than the line pitch of the laser pattern in the edge portion in the TX direction.

3. The nanosilver conductive film according to claim 1, wherein In the 86-inch conductive film, the line pitch of the laser pattern in the middle portion in the TX direction is wider than the line pitch of the laser pattern in the edge portion in the TX direction by 0.2-0.24 mm.

4. The nanosilver conductive film according to claim 1, characterized in that In the 98-inch conductive film, the line pitch of the laser pattern in the middle portion in the TX direction is wider by 0.24-0.3 mm than the line pitch of the laser pattern in the edge portion in the TX direction.

5. A large-size nano-silver capacitive screen, characterized in that: The invention comprises a substrate and the nanosilver conductive film according to any one of claims 1 to 4 arranged on the substrate.

Citation Information

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