Display device

Abstract

The present application relates to a display device. The display device includes a substrate, a circuit portion provided on the substrate, and a packaging layer provided on the circuit portion. An inorganic layer is provided on the packaging layer and includes a recess. An anti-reflection layer is provided on the inorganic layer. The anti-reflection layer includes a first region overlapping the recess and a second region outside the first region. A transmittance of the first region and a transmittance of the second region are different from each other.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority to Korean Patent Application No. 10-2019-0120591, filed on September 30, 2019, with the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0003] This disclosure relates to display devices. Background Technology

[0004] Portable devices including displays (such as mobile phones, portable multimedia players (PMPs), personal digital assistants (PDAs), laptops, etc.) are frequently used in environments with significant amounts of external light. However, the visibility of the image produced by the display device is significantly reduced when external light is reflected or scattered on the display surface. Therefore, it is important to reduce the problems caused by the reflection and scattering of external light on the display surface.

[0005] Recently, various display devices with camera functions in addition to displaying images have been developed. Because optical components such as cameras or infrared sensors are located outside the display area of ​​the display device, the size of the display area is usually reduced. Summary of the Invention

[0006] The present invention aims to provide a display device that prevents the display quality from being degraded due to reflection. Furthermore, the present invention has been proposed to provide a display device comprising a transmissive region surrounded by a display area.

[0007] An exemplary embodiment of the present invention includes a display device comprising a substrate, a circuit portion disposed on the substrate, and an encapsulation layer disposed on the circuit portion. An inorganic layer is disposed on the encapsulation layer and includes a groove. An antireflective layer is disposed on the inorganic layer. The antireflective layer includes a first region overlapping the groove and a second region outside the first region. The transmittance of the first region and the transmittance of the second region are different from each other.

[0008] The edge of the first region can be aligned with the outermost edge of the groove.

[0009] The inorganic layer may include silicon oxide nitride (SiON).

[0010] The groove can have a circular shape in a plan view.

[0011] The anti-reflective layer may include a first passivation layer, a second passivation layer overlapping the first passivation layer, and a first optical layer disposed between the first passivation layer and the second passivation layer.

[0012] The first optical layer can include polyvinyl alcohol.

[0013] Each of the first passivation layer and the second passivation layer can include at least one of triacetyl cellulose (TAC), polyethylene terephthalate (PET), a cyclic olefin polymer (COP), and an acrylic polymer.

[0014] The anti-reflection layer can further include a second optical layer disposed between the inorganic layer and the first passivation layer.

[0015] The first optical layer can include I5 - , I3 - , and I - , and a content of I5 - and I3 - included in the portion of the first optical layer in the first area can be less than a content of I5 - and I3 - included in a portion of the first optical layer in the second area.

[0016] The first area can be transparent.

[0017] Another exemplary embodiment includes a display device having a substrate, a circuit portion disposed on the substrate, and an encapsulation layer disposed on the circuit portion. An inorganic layer is disposed on the encapsulation layer and includes a recess. The inorganic layer includes silicon oxynitride (SiON). An anti-reflection layer is disposed on the inorganic layer and includes a first area overlapping the recess and a second area outside the first area.

[0018] The substrate can include a via overlapping the first area.

[0019] An outermost edge of the recess can be disposed inside an edge of the first area.

[0020] The encapsulation layer can include a first layer disposed on the circuit portion and a second layer disposed on the first layer, and the inorganic layer can be disposed on the second layer.

[0021] The display device can include a third layer disposed between the second layer and the inorganic layer.

[0022] The display device can include an adhesive layer disposed between the inorganic layer and the anti-reflection layer.

[0023] A transmittance of the first area can be higher than a transmittance of the second area.

[0024] Another exemplary embodiment includes a method for manufacturing a display device. The method includes forming a circuit portion disposed on a substrate, the circuit portion including a light emitting element. A packaging layer is formed on the circuit portion. An inorganic layer is formed on the packaging layer. The inorganic layer includes silicon oxynitride (SiON) and a plurality of recesses. An anti-reflection layer is formed, the anti-reflection layer having a first optical layer including I5 - , I3 - , and I - . The inorganic layer is bonded to the anti-reflection layer by performing an aging process under high temperature and high humidity. Silicon oxynitride (SiON) of the plurality of recesses of the inorganic layer undergoes a reaction releasing NH z gas due to the aging process. The NH z gas causes a discoloration of a first region of the first optical layer overlapping the plurality of recesses.

[0025] According to an exemplary embodiment of the inventive concept, reflectivity of a display device can be reduced by an anti-reflection layer, and display quality can be improved. Further, display quality can be improved by a transmissive region disposed in a display region. Further, the anti-reflection layer disposed in the display region and including a transparent region can be easily provided by a simple process. BRIEF DESCRIPTION OF DRAWINGS

[0026] Figure 1 A top view of a display device according to an exemplary embodiment of the inventive concept is illustrated.

[0027] Figure 2 A cross-sectional view taken along line II-II' of Figure 1 according to an exemplary embodiment of the inventive concept is illustrated.

[0028] Figure 3 A top view of an inorganic layer according to an exemplary embodiment of the inventive concept is illustrated.

[0029] Figure 4 A cross-sectional view of an inorganic layer, an adhesive layer, and an anti-reflection layer according to an exemplary embodiment of the inventive concept is illustrated.

[0030] Figure 5 An absorbance graph according to an exemplary embodiment of the inventive concept is illustrated.

[0031] Figure 6 A cross-sectional view of a display device according to an exemplary embodiment of the inventive concept is illustrated.

[0032] Figure 7 A cross-sectional view of a display device according to an exemplary embodiment of the inventive concept is illustrated.

[0033] Figure 8A cross-sectional view of a display device according to an example embodiment of the present inventive concept is shown.

[0034] Figure 9 、 Figure 10 and Figure 11 Plan views of inorganic layers according to example embodiments of the present inventive concept are shown, respectively.

[0035] Figure 12 A cross-sectional view of a circuit portion according to an example embodiment of the present inventive concept is shown.

[0036] Figure 13 and Figure 14 Images of antireflection layers according to example embodiments of the present inventive concept are shown, respectively.

[0037] Figure 15 and Figure 16 Images of antireflection layers according to comparative examples are shown, respectively. DETAILED DESCRIPTION

[0038] The present application will be described more fully hereinafter with reference to the accompanying drawings, in which example embodiments of the present inventive concept are shown. As this described example embodiments can be modified in various different ways, all of which will not depart from the spirit or scope of the present disclosure, as will be recognized by those of ordinary skill in the art.

[0039] Portions unrelated to the description will be omitted for clarity of the description of the present inventive concept, and throughout the specification, like reference numerals denote like elements.

[0040] Further, in the drawings, the size and the thickness of each element are arbitrarily shown for the convenience of description, and the present inventive concept is not limited to the example embodiments shown in the drawings. In the drawings, the thickness of layers, films, panels, regions, and the like is exaggerated for clarity. In the drawings, the thickness of some layers and regions is exaggerated for the convenience of description.

[0041] It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, it can be directly on the other element or intervening elements can also be present. In contrast, when an element is referred to as being "directly on" another element, there are no intervening elements present. In addition, in this specification, the word "on" or "above" means positioned on or below the target portion, and does not necessarily mean positioned on the upper side of the target portion based on the direction of gravity.

[0042] In addition, unless explicitly described to the contrary, the word "comprise" and variations such as "comprises" or "comprising" will be understood to imply the inclusion of stated elements but not the exclusion of any other elements.

[0043] Furthermore, throughout the instruction manual, the phrase "in a plan view" means viewing a specific part from the top, while the phrase "in a sectional view" means viewing a section formed by vertically cutting the specific part from one side.

[0044] In the following text, reference will be made to Figures 1 to 5 A display device is described according to an exemplary embodiment of a concept based on the present invention. Figure 1 A top view of a display device according to an exemplary embodiment is shown. Figure 2 An example embodiment of the following is shown: Figure 1 A schematic cross-sectional view taken from line II-II'. Figure 3 A top view of an inorganic layer according to an exemplary embodiment is shown. Figure 4 Detailed cross-sectional views of the inorganic layer, adhesive layer, and anti-reflective layer are shown. Figure 5 An absorbance diagram is shown to illustrate the principle of decolorization of an antireflective layer according to an exemplary embodiment.

[0045] First, refer to Figure 1 The display device 1 may include an external buffer region 201, a package bonding region 251, a display region DA, and a transmissive region TA. For example, as Figure 1 As shown in the exemplary embodiments, the display area DA may have a rectangular shape having a relatively long side extending in the second direction D2 and a relatively short side extending in the first direction D1. However, the exemplary embodiments of the present invention are not limited thereto. For example, in other exemplary embodiments, the display area DA may have a variety of other shapes or orientations.

[0046] like Figure 1 As shown in the exemplary embodiment, the transmissive region TA can be surrounded by the display region DA. The outer buffer region 201 can be disposed at the periphery of the display region DA (e.g., at the periphery of the display region DA in the first direction D1 and / or the second direction D2). The encapsulation bonding region 251 can be disposed on the edge of the display device 1 at the periphery of the outer buffer region 201 (e.g., at the periphery of the outer buffer region 201 in the first direction D1 and / or the second direction D2). However, the exemplary embodiments of the present invention are not limited thereto, and in other exemplary embodiments, the arrangement of the display region DA, the transmissive region TA, the outer buffer region 201, and the encapsulation bonding region 251 can be varied.

[0047] The display area DA is an area in which multiple pixels are arranged to display an image. Each pixel may include at least one transistor and a light-emitting element that emits light by receiving current from the transistor.

[0048] The transmissive region TA has a relatively higher transmittance than the display region DA or the external buffer region 201. The transmissive region TA does not include any pixels disposed therein, and no image is displayed in the transmissive region TA. Because light is transmitted through the transmissive region TA, when at least one optical component 10 (see...) Figure 2 When the optical component 10 is positioned below the transmission region TA (e.g., positioned below the transmission region TA on a third-direction D3), external light can be incident on or emitted from the optical component 10. In an exemplary embodiment, the optical component 10 may be a camera, a flash, a sensor, etc.

[0049] according to Figure 1 In an exemplary implementation, the transmission region TA can be located within the display region DA. Figure 1 In the exemplary embodiment shown, the transmissive region TA is circular and positioned near the top edge of the display region DA (e.g., the top edge in the second direction D2). However, in other exemplary embodiments, the transmissive region TA can have a variety of different shapes and can be positioned in different portions of the display region DA. Although the transmissive region TA does not include any pixels, it can be surrounded by multiple pixels included in the display region DA (e.g., surrounded in the first direction D1 and / or the second direction D2).

[0050] Because the size of the transmissive region TA is larger than the size of a pixel, the transmissive region TA differs from the light-transmitting area formed in the pixel to achieve a transparent display. For example, the region in which pixel circuitry is formed in the pixel can have a rectangular shape with a width of approximately 25 μm (e.g., length in the first direction D1) and a height of approximately 50 μm (e.g., length in the second direction D2). Conversely, the transmissive region TA can have a much larger circular structure with a diameter of approximately 3 mm or less. However, exemplary embodiments of the inventive concept are not limited thereto.

[0051] In the following text, reference will be made to Figures 2 to 4 A cross-sectional structure of a display device according to an exemplary embodiment of the present invention is described. Figure 2 A circuit portion 200 disposed on substrate 110 is briefly shown. (Refer to...) Figure 12 The transistors and light-emitting elements included in circuit section 200 are described in detail.

[0052] exist Figure 2 In the exemplary embodiment shown, the display device 1 includes a substrate 110. An optical component 10 may be disposed below the substrate 110 along a third direction D3, and the optical component 10 may be a camera, a flash, a sensor, etc.

[0053] In an exemplary embodiment, substrate 110 may include a plastic layer and a barrier layer, or it may include a glass substrate. The plastic layer and the barrier layer may be stacked alternately.

[0054] In exemplary embodiments, the plastic layer may include at least one compound selected from polyethersulfone (PES), polyacrylate (PAR), polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polyarylate, polyimide (PI), polycarbonate (PC), poly(aryl ether sulfone) (PAES), and combinations thereof. The barrier layer may include at least one compound selected from silicon oxide, silicon nitride, and aluminum oxide. However, exemplary embodiments of the present invention are not limited thereto. For example, the barrier layer may include any inorganic material.

[0055] The circuit section 200 includes multiple transistors and light-emitting elements disposed on the substrate 110. For example... Figure 2 As shown in the exemplary embodiment, the circuit portion 200 can be directly disposed on the substrate 110 (e.g., directly disposed on the substrate 110 on the third-party D3).

[0056] An encapsulation layer 400 protecting the light-emitting element is provided on the circuit section 200. For example, such as Figure 2 As shown in the exemplary embodiment, the encapsulation layer 400 can be directly disposed on the circuit portion 200 (e.g., directly disposed on the circuit portion 200 on the third-party D3). In the exemplary embodiment, the encapsulation layer 400 can be a thin-film encapsulation layer in which organic and inorganic films are stacked. Figure 2 As shown in the exemplary embodiments, the encapsulation layer 400 may include a first layer 401, a second layer 402, and a third layer 403. For example, the second layer 402 may be directly disposed on the first layer 401 (e.g., directly disposed on the first layer 401 on the third-party D3), and the third layer 403 may be directly disposed on the second layer 402 (e.g., directly disposed on the second layer 402 on the third-party D3). In the exemplary embodiments, the first layer 401 and the third layer 403 may each be inorganic films, and the second layer 402 may be an organic film. Optionally, the first layer 401 and the third layer 403 may each be organic films, and the second layer 402 may be an inorganic film. However, the exemplary embodiments of the present invention are not limited thereto.

[0057] Furthermore, the shape of the encapsulation layer 400 is not limited to Figure 2 The exemplary embodiment shown illustrates that the encapsulation layer 400 can have various different shapes (e.g., to correspond to the shape of the substrate 110, etc.). In the exemplary embodiment, at least one capping layer and at least one functional layer may be disposed below the encapsulation layer 400 along a third direction D3.

[0058] An inorganic layer 500 is disposed on the encapsulation layer 400. For example, as... Figure 2 As shown in the exemplary embodiment, the inorganic layer 500 can be directly disposed on the encapsulation layer 400 (e.g., directly disposed on the encapsulation layer 400 on the third-party D3).

[0059] The inorganic layer 500 may include inorganic materials, and may include, for example, silicon oxide nitride (SiON). The inorganic layer 500 may be formed by a variety of methods. For example, the inorganic layer 500 may be formed using chemical vapor deposition (CVD) or the like.

[0060] The inorganic layer 500 may include at least one groove 510 that overlaps with the transmission region TA (e.g., overlaps with the transmission region TA on a third direction D3). Each groove 510 is recessed on the upper surface of the inorganic layer 500. Figure 3 As shown in the exemplary embodiments, the groove 510 may have a circular shape in a plan view (e.g., when viewed in a third direction D3), and the inorganic layer 500 may include a plurality of concentric circular grooves 510. However, the exemplary embodiments of the inventive concept are not limited thereto, and each groove 510 may have a variety of shapes.

[0061] An adhesive layer 600 is disposed on the inorganic layer 500. For example, such as... Figure 2 As shown in the exemplary embodiment, the adhesive layer 600 can be directly disposed on the inorganic layer 500 (e.g., directly disposed on the inorganic layer 500 on the third-party D3). In the exemplary embodiment, the adhesive layer 600 may include at least one of resin, optically transparent adhesive (OCA), and pressure-sensitive adhesive (PSA).

[0062] An anti-reflective layer 700 is provided on the adhesive layer 600. For example, such as Figure 2 As shown in the exemplary embodiment, the anti-reflective layer 700 can be directly disposed on the adhesive layer 600 (e.g., directly disposed on the adhesive layer 600 on the third direction D3). The anti-reflective layer 700 can suppress the reflection of external light to improve the visibility of the image displayed in the display area DA of the display device 1 and minimize the loss of light emitted from the circuit section 200 to the outside.

[0063] The antireflective layer 700 overlaps with the transmission region TA and the display region DA (e.g., overlaps with the transmission region TA and the display region DA on a third direction D3). The antireflective layer 700 includes a first region R1 and a second region R2, wherein the first region R1 overlaps with the transmission region TA (e.g., overlaps with the transmission region TA on a third direction D3), and the second region R2 overlaps with the display region DA (e.g., overlaps with the display region DA on a third direction D3) but does not overlap with the transmission region TA. The first region R1 may substantially overlap with at least one groove 510 of the inorganic layer 500 that overlaps with the transmission region TA. The second region R2 may substantially not overlap with at least one groove 510 of the inorganic layer 500 (e.g., not substantially overlaps with at least one groove 510 of the inorganic layer 500 on a third direction D3). The first region R1 that substantially overlaps with the groove 510 of the inorganic layer 500 may also include a region that directly overlaps with areas between the plurality of grooves 510 that are not specifically provided with grooves 510, such as a region that overlaps with the inner side of the outermost groove among the plurality of grooves 510. As will be discussed in this article Figure 7 As described in more detail, the first region R1 may also include a region that overlaps with the transmission region TA and is adjacent to the region of the first region R1 that directly overlaps with the groove 510.

[0064] The transmittance of the first region R1 and the transmittance of the second region R2 can be different from each other. For example, the transmittance of the first region R1 can be higher than that of the second region R2. The transparency of the first region R1 can be higher than that of the second region R2. For example, the first region R1 can be substantially transparent.

[0065] Reference Figure 4 A more detailed description of the anti-reflective layer 700.

[0066] like Figure 4 As shown in the exemplary embodiment, the antireflective layer 700 may include a first passivation layer 720, a second passivation layer 740 overlapping the first passivation layer 720, and a first optical layer 730 disposed between the first passivation layer 720 and the second passivation layer 740. For example, the first optical layer 730 may be directly disposed on the first passivation layer 720 (e.g., directly disposed on the first passivation layer 720 on a third-direction D3). The second passivation layer 740 may be directly disposed on the first optical layer 730 (e.g., directly disposed on the first optical layer 730 on a third-direction D3). Figure 4 As shown in the exemplary embodiment, the antireflective layer 700 may further include a second optical layer 710 disposed between the first passivation layer 720 and the adhesive layer 600. For example, the second optical layer 710 may be disposed directly on the adhesive layer 600 (e.g., directly on the adhesive layer 600 on the third-party D3).

[0067] The first passivation layer 720 and the second passivation layer 740 may be respectively disposed on one surface of the first optical layer 730 to protect and support the first optical layer 730.

[0068] In an exemplary embodiment, the first passivation layer 720 and the second passivation layer 740 may comprise a resin. For example, each of the first passivation layer 720 and the second passivation layer 740 may comprise at least one compound selected from triacetyl cellulose (TAC), polyethylene terephthalate (PET), cyclic olefin polymers (COP), and acrylic polymers.

[0069] Each of the first passivation layer 720 and the second passivation layer 740 may additionally have properties such as anti-reflection, low reflection, anti-glare, or hard coating.

[0070] The first optical layer 730 is a layer used to linearly polarize light emitted from the circuit section 200. The first optical layer 730 has a polarization axis and can linearly polarize light in a direction perpendicular to the polarization axis. For example, the first optical layer 730 can absorb light aligned with the polarization axis and allow light perpendicular to the polarization axis to pass through. Therefore, light emitted from the circuit section 200 can pass through the first optical layer 730 and be linearly polarized in a direction perpendicular to the polarization axis of the first optical layer 730.

[0071] In an exemplary embodiment, the first optical layer 730 may include polyvinyl alcohol (PVA). For example, the first optical layer 730 can be formed by stretching a film comprising polyvinyl alcohol (which is a polymer material) and by adsorbing and orienting pigments (such as iodine) therein. In an exemplary embodiment, the first optical layer 730 may include I5. - I3 - and I - .

[0072] During the bonding of the inorganic layer 500 and the anti-reflective layer 700 via the adhesive layer 600, an aging process is performed under high temperature and high humidity conditions. In an exemplary embodiment, the high temperature conditions may be, for example, in the range of about 60°C to about 80°C, and the high humidity conditions may be, for example, in the range of about 60% to about 90%. In this exemplary embodiment, moisture (H2O), such as water vapor, is introduced through the adhesive layer 600, which has high moisture permeability. The moisture (H2O) can move along the adhesive layer 600 and flow into the grooves 510 of the inorganic layer 500. A chemical reaction, such as reaction formula 1 below, can occur in the grooves 510, which have already undergone high temperature and high humidity conditions and have a relatively loose atomic bonding structure.

[0073] <Reaction Formula 1>

[0074] SiONx ->SiO y +NH z

[0075] The gas NH produced by reaction 1 z It flows into the antireflective layer 700, such as into the first optical layer 730. For example, the gas NH from the groove 510. z It can flow into the region of the first optical layer 730 that overlaps with the transmission region TA. Gas NH z It can be used with I5 included in the first optical layer 730 - and I3 - Reaction. NH gas flowing into the first optical layer 730. z With the first optical layer 730 I5 - and I3 - A chemical reaction, as shown in Reaction Formula 2 below, can occur in the first optical layer 730.

[0076] <Reaction 2>

[0077] I5 - (or I3) - +I2)+2NH4 + ->2I2+I - +2NH3+H2

[0078] Reference Figure 5 I5 as the primary material - It can absorb light in the wavelength range of approximately 600 nanometers to approximately 700 nanometers, and I3 is used as a second material. - It can absorb light in the wavelength range of approximately 500 nanometers. The I5 in the first region R1 of the first optical layer 730. - and I3 - (It absorbs light of a predetermined wavelength) through interaction with the gas NH z The reaction decomposes into I - I - It has a low absorbance and is essentially transmissive. Therefore, the first optical layer 730 in the first region R1 can be considered decolorized. For example, the first optical layer 730 decolorized in the first region R1 can be transparent. However, the gas NH from the groove 510... z It essentially does not flow into the region of the first optical layer 730 corresponding to the second region R2, and is therefore included in the second region R2. - and I3 - Not due to NH gas z It decomposes due to the reaction. Therefore, it has a relatively large amount of I5 compared to the first region R1. - and I3 -The transmittance of the second region R2 can be lower than that of the first region R1.

[0079] Including I5 in the first region R1 - and I3 - The concentration can be less than that of I5 included in the second region R2. - and I3 - The concentration of I. Furthermore, I is included in the first region R1. - The concentration can be greater than that of I included in the second region R2. - The concentration of I5 was reduced in the first region R1. - and I3 - The absorption of light improves light transmittance, and the first region R1 can be transparent. The antireflective layer region changes with I5. - and I3 - The content of I decreased and - The phenomenon of becoming transparent due to an increase in the content of [a substance] is called decolorization.

[0080] The first region R1 can be decolorized by a predetermined gas, resulting in high transmittance and low polarization. The polarization of the first region R1 can be lower than that of the second region R2.

[0081] In summary, the grooves 510 of the inorganic layer 500 produce materials (e.g., NH4+) that cause partial decolorization of the first optical layer 730. z (Gas). The corresponding material causes decolorization of a portion of the first optical layer 730 that overlaps with the groove 510 (e.g., the first region R1), thereby allowing a substantially transparent region to overlap with the optical component 10 without resisting a physical removal process of the reflective layer 700.

[0082] In an exemplary embodiment, the second optical layer 710 may be a delay layer. The second optical layer 710 may be a conventional layer used in an anti-reflective layer for a display device to provide delay functionality.

[0083] In an exemplary embodiment, the second optical layer 710 may include at least one selected from acrylic-based films, polycarbonate-based films, polystyrene-based films, polyimide-based films, cellulose-based films, olefin-based films, cyclic olefin polymer-based films, and combinations thereof. For example, the second optical layer 710 may include an acryloyl-based film, a polycarbonate-based film, or a cyclic olefin polymer-based film.

[0084] In the following text, reference will be made to Figures 6 to 11 A display device according to an exemplary embodiment is described. Figure 6 A schematic cross-sectional view of a display device according to an exemplary embodiment is shown.Figure 7 A schematic cross-sectional view of a display device according to an exemplary embodiment is shown. Figure 8 A schematic cross-sectional view of a display device according to an exemplary embodiment is shown. Figure 9 , Figure 10 and Figure 11 Top views of the inorganic layer according to an exemplary embodiment are shown. References above will be omitted. Figures 1 to 5 Descriptions of components and contents that are the same as or similar to those described.

[0085] like Figure 6 As shown in the exemplary embodiment, the substrate 110 may include a via 110h that overlaps with the transmission region TA (e.g., overlaps with the transmission region TA on a third direction D3). The via 110h can be adjusted according to the size of the provided optical component 10 or the size of the transmission region TA. For example, as Figure 6 As shown in the exemplary embodiment, the through hole 110h may have a width approximately the same as the width of the transmission region TA (e.g., the length in the first direction D1).

[0086] according to Figure 6 In an exemplary embodiment, the through-hole 110h may overlap with the groove 510 formed in the inorganic layer 500 (e.g., overlap with the groove 510 formed in the inorganic layer 500 in the third direction D3). Furthermore, the through-hole 110h may overlap with the first region R1 of the anti-reflective layer 700 (e.g., overlap with the first region R1 of the anti-reflective layer 700 in the third direction D3).

[0087] like Figure 7 As shown in the exemplary embodiment, the outermost edge of the groove 510 formed in the inorganic layer 500 (e.g., the outermost edge in the first direction D1) can be disposed inside the edge of the transmission region TA.

[0088] When high temperature and high humidity conditions are provided during the manufacturing process of the display device, gases (e.g., NH3) generated in the recess 510 may cause adverse reactions. z This causes decolorization (e.g., transparency) to occur in a portion of the antireflective layer 700.

[0089] Due to the diffusion of gas generated in the groove 510, decolorization can be performed in the antireflective layer 700 having an area larger than that occupied by the groove 510. Therefore, the planar region of the first region R1 (e.g., the planar region in the first direction D1 and / or the second direction D2) can be larger than the planar region defined by the outermost edge of the groove 510. For example, as... Figure 7As shown in the exemplary embodiment, the outermost edge of the first region R1 of the antireflective layer 700 extends beyond the outermost edge of the groove 510 (for example, the first region R1 of the antireflective layer 700 also includes a region extending from the outermost edge of the groove 510 in the first direction D1 and / or the second direction D2), and does not overlap with the outermost edge of the groove 510 in the third direction D3.

[0090] like Figure 8 As shown in the exemplary embodiment, the encapsulation layer 400 may include a first layer 401 and a second layer 402. The second layer 402 may be directly disposed on the first layer 401 (e.g., directly disposed on the first layer 401 on the third-party D3). The first layer 401 may be directly disposed on the circuit portion 200 (e.g., directly disposed on the circuit portion 200 on the third-party D3). For example, the first layer 401 may be an organic layer and the second layer 402 may be an inorganic layer, or the first layer 401 may be an inorganic layer and the second layer 402 may be an organic layer. Figure 2 Unlike the exemplary implementation shown, the inorganic layer 500 can be directly disposed on the second layer 402 (e.g., directly disposed on the second layer 402 on the third-party D3). The second layer 402 can directly contact the inorganic layer 500.

[0091] according to Figure 8 In an exemplary embodiment, the inorganic layer 500 can not only decolorize a portion of the antireflective layer 700 by including the groove 510, but can also be used as a layer of the encapsulation layer 400.

[0092] Next, refer to Figure 9 , Figure 10 and Figure 11 The inorganic layer 500 according to the exemplary embodiment may include various types of grooves 510.

[0093] like Figure 9 As shown, the groove 510 may have an outermost edge overlapping the transmission region TA (e.g., a lateral edge in the first direction D1 and / or the second direction D2), and may have a grid pattern located within the outermost edge. Optionally, as Figure 10 As shown in the exemplary embodiment, the groove 510 may have an outermost edge overlapping the transmission region TA (e.g., a lateral edge in the first direction D1 and / or the second direction D2), and has a plurality of dotted patterns located within the outermost edge. The plurality of dotted patterns may be arranged in a predetermined geometric pattern or may be random. Alternatively, as... Figure 11As shown, the groove 510 may have an outermost edge that overlaps with the transmission region TA (e.g., a lateral edge in the first direction D1 and / or the second direction D2), and has a plurality of concentric rectangular patterns located within the outermost edge. However, in other exemplary embodiments, the groove 510 may have a variety of different shapes. For example, the groove 510 is not limited to a flat shape and may have a variety of different shapes.

[0094] In the following text, reference will be made to Figure 12 The circuit portion of a display device according to an exemplary embodiment is described. Figure 12 A schematic cross-sectional view of a circuit portion 200 according to an exemplary embodiment is shown.

[0095] The circuit portion 200 disposed on the substrate 110 includes a buffer layer 120. For example, the buffer layer 120 may be disposed directly on the substrate 110 (e.g., directly on the substrate 110 in third direction D3). In exemplary embodiments, the buffer layer 120 may include an inorganic insulating material, such as at least one compound selected from silicon oxide, silicon nitride, and aluminum oxide, or may include an organic insulating material such as polyimide propylene. In some exemplary embodiments, the buffer layer 120 may be omitted. The buffer layer 120 may planarize the surface of the substrate 110 or prevent moisture, impurities, etc., from flowing into the light-emitting layer 370.

[0096] A semiconductor layer 130 is disposed on the buffer layer 120. For example, as Figure 12 As shown in the exemplary embodiment, the semiconductor layer 130 may be directly disposed on the buffer layer 120 (e.g., directly disposed on the buffer layer 120 on the third-direction D3). In the exemplary embodiment, the semiconductor layer 130 may include at least one compound selected from amorphous semiconductors, polycrystalline semiconductors, and oxide semiconductors.

[0097] The semiconductor layer 130 may include a source region 132 connected to the source electrode 173, a drain region 133 connected to the drain electrode 175, and a channel region 131 disposed between the source region 132 and the drain region 133 (e.g., disposed between the source region 132 and the drain region 133 in the first direction D1).

[0098] A gate insulating film 140 is provided on the portion of the semiconductor layer 130 and the buffer layer 120 not covered by the semiconductor layer 130. For example, as Figure 12As shown in the exemplary embodiment, the gate insulating film 140 can be directly disposed on the portion of the semiconductor layer 130 and the buffer layer 120 not covered by the semiconductor layer 130 (e.g., directly disposed on the portion of the semiconductor layer 130 and the buffer layer 120 not covered by the semiconductor layer 130 on the third-party D3). In the exemplary embodiment, the gate insulating film 140 may include an inorganic material such as silicon nitride or silicon oxide, or may include an organic insulating material. Silicon nitride may include, for example, SiN. x Or SiON, and silicon oxide may include, for example, SiO x .

[0099] A gate electrode 124 may be disposed on the gate insulating film 140 disposed on the semiconductor layer 130. For example, Figure 12 As shown in the exemplary embodiment, the gate electrode 124 can be directly disposed on the gate insulating film 140 (e.g., directly disposed on the gate insulating film 140 on the third-direction D3). The gate electrode 124 can overlap with the channel region 131 of the semiconductor layer 130 (e.g., overlap with the channel region 131 of the semiconductor layer 130 on the third-direction D3).

[0100] An interlayer insulating film 160 is provided to cover the gate electrode 124 and the exposed gate insulating film 140. For example, as Figure 12 As shown in the exemplary embodiment, the interlayer insulating film 160 can be directly disposed on the exposed portion of the gate electrode 124 and the gate insulating film 140 that is not covered by the gate electrode 124. The interlayer insulating film 160 may include inorganic insulating materials or organic insulating materials.

[0101] An active electrode 173 and a drain electrode 175 can be disposed on the interlayer insulating film 160. For example, Figure 12 As shown in the exemplary embodiment, the source electrode 173 and the drain electrode 175 can be directly disposed on the interlayer insulating film 160 (e.g., directly disposed on the interlayer insulating film 160 on the third-direction D3). The source electrode 173 and the drain electrode 175 are connected to the source region 132 and the drain region 133 of the semiconductor layer 130 through the contact holes of the interlayer insulating film 160 and the gate insulating film 140, respectively.

[0102] A planarization insulating film 180 may be provided on the source electrode 173, the drain electrode 175, and the interlayer insulating film 160 exposed from the source electrode 173 and the drain electrode 175. For example, as Figure 12As shown in the exemplary embodiment, the planarization insulating film 180 can be directly disposed on the exposed portions of the source electrode 173, the drain electrode 175, and the interlayer insulating film 160 (e.g., directly disposed on the exposed portions of the source electrode 173, the drain electrode 175, and the interlayer insulating film 160 on a third-party direction D3). The planarization insulating film 180 may include inorganic insulating materials or organic insulating materials.

[0103] A pixel electrode 191, serving as a first electrode, is disposed on the planarized insulating film 180. For example, as... Figure 12 As shown in the exemplary embodiment, the pixel electrode 191 can be directly disposed on the planarization insulating film 180 (e.g., directly disposed on the planarization insulating film 180 on a third-party D3). The pixel electrode 191 can be connected to the drain electrode 175 through the contact holes of the planarization insulating film 180.

[0104] Spacing walls 360 can be provided on the pixel electrode 191 and the planarization insulating film 180. For example, Figure 12 As shown in the exemplary embodiment, the partition wall 360 can be directly disposed on the pixel electrode 191 and the planarization insulating film 180 (e.g., directly disposed on the pixel electrode 191 and the planarization insulating film 180 on the third-direction D3). The partition wall 360 can overlap with at least a portion of the pixel electrode 191 (e.g., overlap with at least a portion of the pixel electrode 191 on the third-direction D3). The partition wall 360 has an opening 361 that overlaps with the pixel electrode 191 (e.g., overlaps with the pixel electrode 191 on the third-direction D3). The light-emitting layer 370 is disposed in the opening 361. A common electrode 270 is disposed on the light-emitting layer 370 and the partition wall 360. For example, as Figure 12 As shown in the exemplary embodiment, the common electrode 270 can be directly disposed on the light-emitting layer 370 and the partition wall 360 (e.g., directly disposed on the light-emitting layer 370 and the partition wall 360 in the third direction D3). In the exemplary embodiment, the common electrode 270 can extend across multiple pixels (e.g., extending across multiple pixels in the first direction D1). The encapsulation layer 400 described above is disposed on the common electrode 270. For example, as... Figure 12 As shown in the exemplary embodiment, the encapsulation layer 400 can be directly disposed on the common electrode 270 (e.g., directly disposed on the common electrode 270 on the third-party D3). The pixel electrode 191, the light-emitting layer 370, and the common electrode 270 form a light-emitting diode.

[0105] In some exemplary embodiments, the pixel electrode can be an anode serving as a hole injection electrode, and the common electrode can be a cathode serving as an electron injection electrode. Conversely, the pixel electrode can be a cathode, and the common electrode can be an anode. When holes and electrons are injected into the light-emitting layer from the pixel electrode and the common electrode, respectively, light is emitted when the excitons formed therein by the injected holes and electrons combine from the excited state to the ground state.

[0106] In the following text, reference will be made to Figures 13 to 16 Images depicting an anti-reflective layer according to exemplary embodiments and comparative examples. Figure 13 and Figure 14 Images of an anti-reflective layer according to an exemplary embodiment of the present invention are shown. Figure 15 and Figure 16 Images of the anti-reflective layer according to the comparison example are shown respectively.

[0107] First, after forming an inorganic layer of silicon nitride oxide (SiON) on the glass, multiple grooves with a cross shape are formed. Then, an anti-reflective layer is attached to the inorganic layer and subjected to an aging treatment at 65°C and 90% humidity for 24 hours.

[0108] Figure 13 It is an image of the anti-reflective layer in its initial state according to the above process. Figure 14 This is an image of the anti-reflective layer after 24 hours. (Example) Figure 14 As shown in the image, in response to the high temperature and high humidity conditions of the aging process, discoloration is induced in the antireflective layer by a cross-shaped groove included in the inorganic layer.

[0109] In the comparative example, during the formation of silicon nitride (SiN) x After the inorganic layer is applied, the above process is performed under the above conditions, and then the process is checked after 24 hours to determine whether the anti-reflective layer has decolorized. Figure 15 It is based on the image of the anti-reflective layer in the initial state of the comparison example, and Figure 16 The image shows the anti-reflective layer after 24 hours, based on a comparison example.

[0110] Reference Figure 15 and Figure 16 This confirmed that even after 24 hours of treatment, no separate decolorization occurred due to the pattern included in the inorganic layer.

[0111] In display devices where the transmissive region is surrounded by the display region, an antireflective layer overlapping the transmissive region should be removed or transparently provided. However, the area where the antireflective layer is removed can form an air gap, and light refraction can occur between the air gap and the window. Optionally, an adhesive layer is required to bond the antireflective layer to the window, and when a portion of the antireflective layer is removed, the adhesive layer can have a curved shape in the removed area, which can lead to unintended light refraction. In embodiments where the antireflective layer is partially removed, display quality degradation may occur due to unintended light refraction. Additionally, the removal process may cause defects such as cracks.

[0112] However, in exemplary embodiments of the present invention, where the inorganic layer includes grooves and also comprises silicon nitride material, discoloration may occur in the portion of the antireflective layer overlapping the grooves. Therefore, an antireflective layer including transparent areas in the display area can be readily provided without an antireflective layer removal process, thereby providing a display device with improved display quality.

[0113] Although the invention has been described in conjunction with exemplary embodiments, it should be understood that the inventive concept is not limited to the disclosed exemplary embodiments, but rather is intended to cover a variety of modifications and equivalent arrangements.

Claims

1. A display device comprising: a substrate; a circuit portion provided over the substrate; an encapsulation layer provided over the circuit portion; an inorganic layer provided over the encapsulation layer and including a recess; and an anti-reflection layer provided over the inorganic layer, the anti-reflection layer including a first region overlapping with the recess and a second region outside the first region, wherein the recess is configured to decolor the first region to have a transmittance higher than that of the second region.

2. The display device according to claim 1, wherein an outermost edge of the first region is aligned with an outermost edge of the recess.

3. The display device according to claim 1, wherein the inorganic layer includes silicon oxynitride.

4. The display device according to claim 1, wherein the recess has a circular shape in a plan view.

5. The display device according to claim 1, wherein the anti-reflection layer further includes: a first passivation layer; a second passivation layer overlapping with the first passivation layer; and a first optical layer provided between the first passivation layer and the second passivation layer.

6. The display device of claim 5, wherein, the first optical layer includes polyvinyl alcohol.

7. The display device according to claim 5, wherein each of the first passivation layer and the second passivation layer includes at least one compound selected from triacetyl cellulose, polyethylene terephthalate, a cyclic olefin polymer, and an acrylic polymer.

8. The display device according to claim 5, wherein the anti-reflection layer further includes a second optical layer provided between the inorganic layer and the first passivation layer. 9.The display device according to claim 5, wherein: The first optical layer comprises I5 - , I3 - , and I - ; and a concentration of I5 - and I3 - in the portion of the first optical layer in the first region is less than a concentration of I5 - and I3 - in the portion of the first optical layer in the second region.

10. The display device according to claim 1, wherein the first region is transparent.

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