Cleaning device

Abstract

The present invention provides a cleaning device that can suppress the reduction of electrostatic adsorption force under vacuum state and remove foreign matter in a vacuum processing chamber of a semiconductor manufacturing device. The cleaning device comprises: a foreign matter adsorption unit (4), wherein an adsorption electrode (3) including a pair of electrodes is arranged inside an insulator; and an adsorption control unit (5), wherein a control switch is turned on to charge the adsorption electrode, so that the surface of the insulator exhibits electrostatic adsorption force and can adsorb foreign matter; and the control switch of the adsorption control unit (5) is a remotely operated switch that can be operated externally, and the control switch is turned on for the cleaning device in a vacuum closed space that is sealed under vacuum state, thereby removing foreign matter in the vacuum processing chamber by the electrostatic adsorption force exhibited under vacuum state.

Description

Technical Field

[0001] The present invention relates to a cleaning device for removing foreign matter in a vacuum processing chamber of a semiconductor manufacturing device. More specifically, the present invention relates to a cleaning device including an adsorption electrode inside an insulator, which can adsorb and remove foreign matter by electrostatic adsorption force. Background Art

[0002] For example, various foreign matters generated during the semiconductor manufacturing process are attached or suspended in the vacuum processing chamber of a semiconductor manufacturing device used in various semiconductor manufacturing processes such as an ion implantation device or an etching device, a chemical vapor deposition (CVD) device or a photolithography device. As an example, there can be listed: fragments from silicon wafers or residues of resists, dust or dirt from structural components in the vacuum processing chamber generated by plasma or mechanical friction, and particles brought in from the outside due to the transportation of wafers (in this specification, these are collectively referred to as foreign matters).

[0003] If such foreign matter accumulates in the vacuum processing chamber, for example, when an electrostatic chuck is used to adsorb and fix a processed object such as a silicon wafer, the following problems arise: the foreign matter is interposed between the adsorption surface of the electrostatic chuck and the processed object, the contact between the electrostatic chuck and the processed object becomes insufficient, and the cooling performance of the processed object generated by the electrostatic chuck decreases. In addition, the presence of foreign matter on the back side of the processed object causes the position accuracy of the processed object to be disturbed, for example, focal inconsistency occurs in the photolithography device, and other problems. Furthermore, because foreign matter adheres to the surface (main surface) side of the processed object, there is a risk of defects such as poor wiring.

[0004] Therefore, semiconductor manufacturing equipment is usually cleaned regularly to remove foreign matter in the vacuum processing chamber and prevent the accumulation of such foreign matter. However, such cleaning is mainly manual, so the possibility of new artificial contamination cannot be denied. In addition, during cleaning, the vacuum in the vacuum processing chamber must be released, and it takes several hours each time to achieve the necessary vacuum degree when the semiconductor manufacturing equipment is restarted, so it is not economical.

[0005] Therefore, several cleaning devices for removing foreign matter without releasing the vacuum of the vacuum processing chamber have been proposed. For example, Patent Document 1 discloses a dust adsorption chip as follows: a dummy wafer charged by corona charging or the like is transported into the vacuum processing chamber of a semiconductor manufacturing device, and dust (foreign matter) is adsorbed by the electrostatic force of the dummy wafer. In addition, Patent Document 2 discloses a cleaning device as follows: a cleaning sheet of polyethylene terephthalate or the like that is electrically polarized by electretization or thermal electretization using a corona method is adhered to a cleaning wafer, and the cleaning sheet is transported into the vacuum processing chamber of a semiconductor manufacturing device to remove foreign matter. Furthermore, Patent Document 3 discloses a cleaning device as follows: a cleaning wafer containing an adhesive polymer is placed on a wafer stage of a semiconductor manufacturing device via a protrusion, and when the protrusion is compressed and crushed, the foreign matter on the wafer stage is recovered by the adhesive cleaning wafer.

[0006] However, if these conventional cleaning devices use adhesive cleaning polymers, the adhesive must be replaced each time it is used, which increases operating costs. On the other hand, if the cleaning device charges the shutter by corona charging, the device for charging must be incorporated into the existing equipment.

[0007] Prior art literature

[0008] Patent Literature

[0009] Patent Document 1: Japanese Patent Application Publication No. 2000-260671

[0010] Patent Document 2: Japanese Patent Application Publication No. 2002-28594

[0011] Patent Document 3: Japanese Patent No. 5956637 Summary of the invention

[0012] Problems to be solved by the invention

[0013] However, the inventors of the present invention studied a cleaning device that charges the surface to absorb and remove foreign matter in a vacuum processing chamber by static electricity, and obtained the following experimental results: the electrostatic adsorption force obtained by charging under atmospheric pressure is sharply reduced by entering a vacuum state. In other words, it is believed that even if a baffle or the like that exhibits electrostatic adsorption force under atmospheric pressure is transported into the vacuum processing chamber as in the previous cleaning device, the adsorption performance of foreign matter in the vacuum processing chamber is not fully exerted.

[0014] Therefore, the inventors of the present invention conducted further repeated research and found that by using a remote-operated control switch that can be operated from the outside, the cleaning device in a vacuum state can be charged and the electrostatic adsorption force can be manifested, thereby improving the effectiveness of adsorption of foreign matter in the vacuum processing chamber, thereby completing the present invention.

[0015] Therefore, an object of the present invention is to provide a cleaning device that can remove foreign matter in a vacuum processing chamber while suppressing a decrease in electrostatic adsorption force.

[0016] Technical means of solving problems

[0017] That is, the present invention is a cleaning device, which is a cleaning device for removing foreign matter in a vacuum processing chamber of a semiconductor manufacturing device, and the cleaning device is characterized in that it includes: a foreign matter adsorption unit, in which an adsorption electrode including a pair of electrodes is arranged inside an insulator; and an adsorption control unit, which charges the adsorption electrode by turning on a control switch, so that the surface of the insulator exhibits an electrostatic adsorption force and can adsorb foreign matter; and the control switch of the adsorption control unit is a remote-operated switch that can be operated externally, and for the cleaning device in a vacuum enclosed space that is enclosed in a vacuum state, the control switch is turned on, thereby removing foreign matter in the vacuum processing chamber by the electrostatic adsorption force exhibited in the vacuum state.

[0018] The cleaning device of the present invention includes: a foreign matter adsorption unit, in which an adsorption electrode including a pair of electrodes is arranged inside an insulator; and an adsorption control unit, which charges the adsorption electrode by turning on a control switch so that the surface of the insulator exhibits an electrostatic adsorption force and can adsorb foreign matter; and as a control switch of the adsorption control unit, a remote-operated switch that can be externally operated is used.

[0019] Regarding the remote-operated control switch, as long as external operation can be performed, the circuit contacts of the adsorption control unit can be connected (that is, the electrical connection can be controlled wirelessly without having a lead) for the cleaning device in the vacuum-enclosed space that is enclosed in a vacuum state. For example, there are: a timer switch with a built-in timer that turns on / off the switch after a specified period of time, a laser sensing switch that senses laser light from the outside to operate, a reed switch that operates by magnetic force, etc. Two or more of these switches can be used in combination, and other switches can also be used in combination with these switches.

[0020] Here, as a vacuum-enclosed space sealed in a vacuum state, the object of removing foreign matter, that is, the vacuum processing chamber of a semiconductor manufacturing device, is suitable. In addition, for example, an intermediate transfer chamber can be listed, which is provided together with the vacuum processing chamber and is used to supply the processed objects such as silicon wafers by a transfer robot.

[0021] In addition, the adsorption control unit may also have a built-in power supply for charging the adsorption electrode of the foreign matter adsorption unit so that the surface of the insulator exhibits an electrostatic adsorption force, or a storage element that can store electrical energy such as a capacitor temporarily storing electric charge using an external power supply may also be built-in without a built-in power supply.

[0022] Among them, regarding the case of a built-in power supply, for example, the adsorption control unit includes a boost circuit for boosting the voltage, a battery for operating the boost circuit, and a voltage application switch for charging the adsorption electrode by a high voltage output from the boost circuit, and the voltage application switch constitutes the remote-operated control switch. Thus, if the cleaning device is arranged in a vacuum-enclosed space and the voltage application switch is turned on, the electrostatic adsorption force can be manifested under a vacuum state. At this time, a diode may also be provided between the boost circuit and the adsorption electrode. Thus, the charging of the adsorption electrode using the high voltage output from the boost circuit is maintained by the rectification action, so there is no need to always maintain the output of the boost circuit.

[0023] On the other hand, in the case of no built-in power supply, for example, the adsorption control unit includes a connection terminal for an external power supply, a capacitor charged and storing electric charge by the voltage of the external power supply connected to the connection terminal, and a discharge switch for discharging the charge stored in the capacitor to charge the adsorption electrode, and the discharge switch constitutes the remote-operated control switch. Thus, if the capacitor is charged by connecting to an external power supply under atmospheric pressure, the cleaning device is arranged in a vacuum-enclosed space and the discharge switch is turned on, the electrostatic adsorption force can be manifested under a vacuum state. In addition, by replacing the built-in power supply with a storage element such as a built-in capacitor, the adsorption control unit can be made smaller, which is also suitable in that, for example, the cleaning device itself can be more reliably sealed.

[0024] Furthermore, the adsorption control unit may also include a ground terminal for discharging the charge of the charged adsorption electrode and a ground switch connecting the adsorption electrode and the ground terminal. After adsorbing foreign matter in the vacuum processing chamber, the ground switch is turned on to discharge the charge from the ground terminal, thereby making it easy to remove foreign matter from the surface of the insulator of the foreign matter adsorption unit.

[0025] Here, the removal of foreign matter from the surface of the insulator of the foreign matter adsorption unit can be performed after the cleaning device is moved out of the vacuum processing chamber of the semiconductor manufacturing device. For example, the cleaning device can be transferred to the intermediate transfer chamber, and the grounding switch can be turned on while maintaining the vacuum state to discharge the charge from the ground terminal. Alternatively, the cleaning device can be moved out of the intermediate transfer chamber and the grounding switch can be turned on in the atmosphere. In order to turn on the grounding switch in a vacuum, the grounding switch can also include a remote-operated switch that can be externally operated as described above.

[0026] In addition, regarding the foreign matter adsorption unit of the cleaning device of the present invention, as long as an adsorption electrode including a pair of electrodes is provided inside an insulator, foreign matter in the vacuum processing chamber of the semiconductor manufacturing device can be adsorbed by the electrostatic adsorption force generated on the surface of the insulator. Here, in order to deal with both positively charged foreign matter and negatively charged foreign matter in the vacuum processing chamber, the adsorption electrode includes a pair of electrodes, one electrode is charged on the positive side, and the other electrode is charged on the negative side.

[0027] There are no particular restrictions on the shape or size of the foreign matter adsorption portion, but it is ideal to be consistent with the shape of the processed object such as a wafer or glass substrate processed by the semiconductor manufacturing device from which the foreign matter is removed. In addition, there are no particular restrictions on the material or formation method of the foreign matter adsorption portion. For example, an adsorption electrode of a predetermined shape formed by metal foil can be sandwiched between two resin films containing polyimide, polyethylene terephthalate (PET), fluororesin, etc., and the foreign matter adsorption portion can be formed by a resin insulator formed by stacking these. A metal layer can also be formed on one of two green sheets in a manner that becomes an adsorption electrode of a predetermined shape, and a ceramic insulator can be formed by stacking and calcining these to form a foreign matter adsorption portion. The foreign matter adsorption portion can also be formed by methods or materials other than these.

[0028] Furthermore, the cleaning device of the present invention may also be provided with a foreign matter adsorption part and an adsorption control part integrally with a base part that imitates the shape of a processed object in a semiconductor manufacturing device such as a wafer or a glass substrate. Thus, the cleaning device can be easily moved into the vacuum processing chamber by utilizing a method or path for moving the processed object. At this time, the foreign matter adsorption part is arranged on the back side of the base part in such a manner that the surface of the insulator of the foreign matter adsorption part faces the side of the wafer stage in the vacuum processing chamber, thereby effectively removing foreign matter on the wafer stage. In addition, the foreign matter adsorption part is arranged on the surface of the base part in such a manner that the surface of the insulator of the foreign matter adsorption part faces the processing space side in the vacuum processing chamber opposite to the wafer stage side, thereby removing foreign matter such as floating in the processing space in the vacuum processing chamber.

[0029] Here, when the foreign matter adsorption part is arranged on the back side of the base part so that the surface of the insulator of the foreign matter adsorption part faces the wafer stage side in the vacuum processing chamber, a protrusion for separating the surface of the insulator of the foreign matter adsorption part and the wafer stage from each other may be provided. Thus, it is possible to eliminate the risk of foreign matter being caught between the insulator of the foreign matter adsorption part and crushing it, or the risk of the insulator of the foreign matter adsorption part or the surface of the wafer stage being damaged by the foreign matter.

[0030] In addition, after such a protrusion is provided, an adhesive layer having adhesiveness may be included on the surface of the insulator of the foreign matter adsorption part. In this way, temporarily adsorbed foreign matter can be captured more reliably, for example, the risk of re-contamination caused by adsorbed foreign matter such as foreign matter falling during transportation of the cleaning device can be eliminated. Here, as the adhesive layer, for example, a high-purity silicone adhesive may be applied to form it, but it is ideal to use an adhesive layer with less risk of generating certain gases in the vacuum processing chamber (adhesive layer with less degassing).

[0031] In the present invention, there is no particular limitation on the semiconductor manufacturing device from which foreign matter is removed. As long as it includes a vacuum processing chamber that processes the object to be processed under vacuum as a semiconductor manufacturing process, it can be applied. Among them, a semiconductor manufacturing device that uses an electrostatic chuck that adsorbs and holds the object to be processed by electrostatic adsorption force is suitable. Examples of such semiconductor manufacturing devices include: ion implantation devices, ion doping devices, etching devices, CVD devices, ashing devices, stepping devices, photolithography devices, liquid crystal substrate manufacturing devices, and wafer inspection devices. In addition, as the foreign matter to be removed, as mentioned at the beginning, various foreign matter generated in the semiconductor manufacturing process or mixed in the vacuum processing chamber becomes the object.

[0032] Effects of the Invention

[0033] According to the cleaning device of the present invention, a remote-operated control switch that can be operated from the outside is used to charge the cleaning device in a vacuum state so that the electrostatic adsorption force can be manifested. Therefore, there is no problem of the electrostatic adsorption force generated under atmospheric pressure being sharply reduced under a vacuum state, and the effectiveness of removing foreign matter in the vacuum processing chamber can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 is an explanatory diagram of the cleaning device of the present invention, Figure 1 (a) represents a plane view (surface), Figure 1 (b) represents the cross-sectional view (X-X'), Figure 1 (c) represents a plan view (back side).

[0035] Figure 2 This is an explanatory diagram showing the use of the cleaning device in the vacuum processing chamber.

[0036] Figure 3 It is an explanatory diagram showing a usage form of the cleaning device based on a modified example.

[0037] Figure 4 It is an explanatory diagram showing a first example of an adsorption control circuit forming an adsorption control unit.

[0038] Figure 5This is an explanatory diagram showing how an external power source is connected to the adsorption control circuit of the first example to charge the capacitor.

[0039] Figure 6 This is an explanatory diagram showing how the capacitor is discharged to charge the attraction electrode in the attraction control circuit of the first example.

[0040] Figure 7 This is an explanatory diagram for calculating the movement of charge from the capacitor to the adsorption electrode. Figure 7 (a) indicates the state where the external power supply is connected. Figure 7 (b) shows a state where the external power source is disconnected and the capacitor is connected to the adsorption electrode.

[0041] Figure 8 This is an explanatory diagram showing how the ground terminal is connected to the ground to discharge the charge of the attraction electrode in the attraction control circuit of the first example.

[0042] Fig. 9 It is an explanatory diagram showing a second example of the adsorption control circuit forming the adsorption control unit.

[0043] Fig.10 It is an explanatory diagram showing a third example of the adsorption control circuit forming the adsorption control unit.

[0044] Fig.11 It is an explanatory diagram showing a fourth example of the adsorption control circuit forming the adsorption control unit.

[0045] Fig.12 This is a schematic diagram for explaining a test device used in Test Example 1.

[0046] Fig.13 This is a schematic diagram for explaining the outline of the measurement conditions and pressure conditions in Test Example 1.

[0047] Fig.14 This is a graph showing the measurement results of the adsorption force in Test Example 1.

[0048] Fig.15 This is a schematic diagram for explaining the test device used in Test Example 2.

[0049] Fig.16 This is a schematic diagram for explaining the outline of the measurement conditions and pressure conditions in Test Example 2.

[0050] Fig.17 This is a graph showing the measurement results of the surface potential in Test Example 2 (when the atmospheric pressure condition was maintained).

[0051] Fig.18 This is a graph showing the measurement results of the surface potential in Test Example 2 (in the case of vacuum conditions).

[0052] Description of Reference Numerals

[0053] 1: Base part

[0054] 2: Polyimide film

[0055] 3: Adsorption electrode

[0056] 4: Foreign matter adsorption unit

[0057] 5: Adsorption control unit

[0058] 6: Protrusion

[0059] 7a, 7b: Input terminals (connection terminals)

[0060] 8: Ground terminal

[0061] 9: Capacitor

[0062] 10a, 10b: Discharge switch

[0063] 11a, 11b: Diode

[0064] 12a, 12b: Earthing switch

[0065] 13: External power supply

[0066] 14a, 14b: Solid-state relays

[0067] 15a, 15b: Battery

[0068] 16a, 16b: Circuit switch

[0069] 17: Boost circuit

[0070] 18: Battery

[0071] 19: Voltage application switch

[0072] 20a, 20b: diode

[0073] 21: Ground terminal

[0074] 22a, 22b: Earthing switch

[0075] 23: Vacuum chamber

[0076] 24: Silicon wafer

[0077] 25: Dynamometer

[0078] 26: Double-sided tape

[0079] 27a, 27b: Silicone cable

[0080] 28a, 28b: Reed switch

[0081] 29: Insulation treatment

[0082] 30: Spacer

[0083] 31: Wafer stage DETAILED DESCRIPTION

[0084] Hereinafter, the present invention will be described in more detail.

[0085] exist Figure 1 An example of the cleaning device of the present invention is shown in FIG. Figure 1 As shown in the cross-sectional view of (b), the cleaning device is provided with a foreign matter adsorption unit 4 on one side (back side) of a disk-shaped base portion 1 including a silicon wafer or alumina, and an adsorption control unit 5 on the other side (front side). In addition, on the back side of the base portion 1, outside the foreign matter adsorption unit 4, four protrusions 6 are provided at positions that roughly divide the base portion 1 into four equal parts in the circumferential direction.

[0086] Among them, if Figure 1 (b) a cross-sectional view or Figure 1 As shown in the plan view (back side) of (c), the foreign matter adsorption unit 4 is formed by inserting a pair of semicircular adsorption electrodes 3a and 3b including copper foil between two circular polyimide films 2 bonded to each other to form an insulator. In addition, the adsorption control unit 5 is formed by having an adsorption control circuit that charges these adsorption electrodes 3a and 3b to make the electrostatic adsorption force appear, such as by Figure 1 As shown in the plan view (a) (the surface of the adsorption control unit 5), it includes input terminals 7a and 7b which are connection terminals to an external power source described later, and a ground terminal 8 for discharging the charge of the charged adsorption electrodes 3a and 3b. Moreover, these foreign matter adsorption units 4 and adsorption control units 5 are respectively bonded to the base unit 1 via bonding sheets. Furthermore, in the Figure 1 2 shows an example of a semicircular adsorption electrode 3a, 3b, but the shape of the adsorption electrode 3a, 3b is not limited to this, for example, a comb-shaped adsorption electrode 3a, 3b may also be used.

[0087] In addition, Figure 2 Indicated in Figure 1The cleaning device is used in a vacuum processing chamber. That is, the surface of the insulator forming the foreign matter adsorption part 4 (the surface of the polyimide film 2) is arranged to face the wafer mounting table 31 such as an electrostatic chuck in the vacuum processing chamber, thereby removing foreign matter on the wafer mounting table. At this time, since the protrusion 6 is provided, the foreign matter adsorption part 4 and the wafer mounting table are separated from each other by a distance d, and there is no risk of foreign matter being sandwiched between the two and crushing the foreign matter, or damaging the foreign matter adsorption part 4 or the surface of the wafer mounting table due to the foreign matter.

[0088] Furthermore, in Figure 3 The use of the cleaning device according to the modified example is shown in FIG. Figure 3 As shown, a foreign matter suction unit 4 may be provided on the processing space side of the vacuum processing chamber opposite to the wafer mounting table 31 to remove foreign matter.

[0089] Here, regarding the adsorption control circuit forming the adsorption control unit 5, Figures 4 to 8 The first example is shown in . Figure 4 As shown in the figure, the adsorption control circuit of the first example includes: input terminals 7a and 7b which are connection terminals to an external power source (not shown), a capacitor 9 which is charged by the voltage of the external power source and stores electric charge, and a discharge switch 10a and a discharge switch 10b for discharging the electric charge stored in the capacitor 9 to charge the adsorption electrode 3 (3a, 3b). In addition, a diode 11a and a diode 11b are provided between the input terminal 7a and the capacitor 9, and between the input terminal 7b and the capacitor 9, respectively. Thus, even when the pressure in the vacuum processing chamber passes through the easy discharge region, the current does not flow from the capacitor 9 to the input terminal 7a and the input terminal 7b side, and the capacitor 9 is prevented from being discharged before the adsorption electrode 3 is charged. Furthermore, the adsorption control circuit includes: a ground terminal 8 for discharging the electric charge of the charged adsorption electrode 3 (3a, 3b), and a ground switch 12a and a ground switch 12b which connect the adsorption electrode 3 and the ground terminal 8.

[0090] The discharge switch 10a and the discharge switch 10b are remotely operated switches (control switches) that can be operated externally, such as timer switches, laser sensing switches, and reed switches that operate by magnetic force. Figure 4The discharge switch 10a and the discharge switch 10b in the adsorption control circuit must be connected to a high-voltage switch that can withstand a voltage of at least 1 kV. As for switches of this specification that are easy to obtain at present, a reed switch is preferred. Specifically, commercial products such as the trade name KSK-1A83-100150 manufactured by Standex Electronics can be exemplified. In addition, as for the grounding switch 12a and the grounding switch 12b, it is sufficient to use a switch of high-voltage specification.

[0091] Furthermore, when using Figure 4 When cleaning a vacuum chamber of a semiconductor manufacturing device using a cleaning device for an adsorption control circuit, first, Figure 5 As shown, the output terminals 13a and 13b of the external power supply 13 are connected to the input terminals 7a and 7b respectively under atmospheric pressure to charge the capacitor 9. At this time, it is preferable to use a high voltage power supply as the external power supply 13, and it is preferable to output a high voltage of about (+) 1kV to 5kV from the output terminal 13a of V+ and a high voltage of about (-) 1kV to 5kV from the output terminal 13b of V-.

[0092] After charging the capacitor 9, the cleaning device, which has been disconnected from the external power source 13, is moved into the vacuum closed space. Figure 6 As shown, the discharge switch 10a and the discharge switch 10b are turned on respectively by external operation, thereby discharging the capacitor 9 and charging the adsorption electrode 3. In the external operation, for example, when a reed switch is used, it is sufficient to install a magnet or the like in a vacuum closed space such as a vacuum processing chamber of a semiconductor manufacturing device or an intermediate transfer chamber using a transfer robot, or to install a magnet or the like outside through a glass observation hole that does not hinder the magnetic force. Specifically, it is sufficient to first set the magnet or the like on the wall surface in the intermediate transfer chamber or the entrance of the vacuum processing chamber connecting the intermediate transfer chamber and the vacuum processing chamber, and when the cleaning device is arranged in a vacuum state, the circuit of the discharge switch 10a and the discharge switch 10b can be closed. In addition, in the case of a laser sensing type switch, it is sufficient to first set a laser irradiation window in any of the vacuum closed spaces such as the intermediate transfer chamber or the vacuum processing chamber. In the case of a timer type switch, it is sufficient to set the timer at the time when the cleaning device is arranged in the vacuum processing chamber.

[0093] Regarding the capacitor 9, if the pair of adsorption electrodes 3 (3a, 3b) is regarded as a capacitor and its electrostatic capacitance is represented by C ESC , let the electrostatic capacitance of capacitor 9 be C C , then as long as the electrostatic capacitance C of capacitor 9 C becomes larger than the electrostatic capacitance C of the adsorption electrode 3 ESCIt is preferable to make the electrostatic capacitance C of capacitor 9 C The electrostatic capacitance C of the adsorption electrode 3 becomes ESC More than 10 times (C C ≧10×C ESC ). Thus, in terms of calculation, a voltage of more than 90% of the output voltage of the external power supply 13 can be applied to the adsorption electrode 3, and after the adsorption electrode 3 (3a, 3b) is charged, it is not particularly necessary to maintain the discharge switch 10a, the discharge switch 10b in the on state. In terms of charging the adsorption electrode 3, the electrostatic capacitance C of the capacitor 9 C The electrostatic capacitance may be as large as possible, and although it is difficult to define an upper limit, even if the electrostatic capacitance C of the capacitor 9 is C When the size becomes larger than a certain level, the increase in the voltage applied to the adsorption electrode 3 also decreases, and the effect is saturated. Therefore, it can be said that as long as the electrostatic capacitor C is used, C is the electrostatic capacitance C ESC A capacitor 9 about 50 times larger than that of the capacitor 9 is sufficient.

[0094] Regarding this relationship, if Figure 7 As shown in (a), the voltage of the adsorption control circuit in the state where the capacitor 9 is charged by connecting to the external power supply 13 is V i , let the charge of capacitor 9 be Q ci , let the electrostatic capacitance of capacitor 9 be C C , the electrostatic capacitance of the adsorption electrode 3 is set to C ESC In addition, if Figure 7 As shown in (b), after the external power supply 13 is disconnected, the capacitor 9 is connected to the adsorption electrode 3 to charge the adsorption electrode 3, and the voltage of the adsorption control circuit is set to V f , let the charge of capacitor 9 be Q cf , let the charge of adsorption electrode 3 be Q ESC , these can be expressed as follows. That is, since the total amount of charge does not change before and after the capacitor 9 and the adsorption electrode 3 are connected, the following equation (1) holds.

[0095] Q ci =Q cf +Q ESC ···(1)

[0096] Furthermore, if the above-mentioned equation (1) is rewritten using the relational equation Q=CV of electrostatic capacitance, it can be expressed by the following equations (2) and (3).

[0097] C C V i =C C V f +C ESC Vf ···(2)

[0098] V f =C C / (C C +C ESC )〕V i ···(3)

[0099] Here, if we assume that the electrostatic capacitor C C is the electrostatic capacitance C of the adsorption electrode 3 ESC In the case of capacitor 9 having a capacity 10 times that of the external power source 13, it can be seen that in the calculation based on the above-mentioned formula (3), as shown in the following formula (4), the voltage applied to the adsorption electrode 3 becomes approximately 0.91 times the voltage of the external power source 13.

[0100] V f = =10C ESC / (10C ESC +C ESC )〕V i =(10 / 11)V i =0.91V i ···(4)

[0101] On the other hand, the actual use of electrostatic capacitance C C is the electrostatic capacitance C of the adsorption electrode 3 ESC When the surface potential of the adsorption electrode 3 when the capacitor 9 is discharged to the adsorption electrode 3 is investigated, it is confirmed that the surface potential of the adsorption electrode 3 is about 0.7 times the surface potential of the adsorption electrode 3 when the adsorption electrode 3 is directly connected to the external power supply 13 without passing through the capacitor 9. The reason for the decrease in the surface potential when passing through the capacitor 9 is that the leakage of charge or the loss caused by the resistance can be considered, but according to the calculation result of (4), it can be said that the adsorption electrode 3 can be charged by the discharge from the capacitor 9 as roughly assumed.

[0102] A cleaning device that charges the adsorption electrode 3 to make the surface of the insulator forming the foreign matter adsorption portion 4 exhibit electrostatic adsorption force is arranged in a vacuum processing chamber of a semiconductor manufacturing device, and after adsorbing foreign matter, the cleaning device is taken out of the vacuum processing chamber with the foreign matter adsorbed. Figure 8 As shown, the ground terminal 8 is connected to the ground (earth), and the grounding switches 12a, 12b and the discharge switches 10a, 10b are turned on respectively, thereby releasing the charge in the adsorption electrode 3 to release the electrostatic adsorption force, and remove the foreign matter adsorbed on the foreign matter adsorption part 4. At this time, for example, the electrostatic adsorption force of the cleaning device can be released under vacuum such as in an intermediate transfer chamber, or the electrostatic adsorption force of the cleaning device can be released under atmospheric pressure. Of course, the cleaning device that has removed the foreign matter can be used again to remove the foreign matter in the vacuum processing chamber.

[0103] In addition, the adsorption control circuit forming the adsorption control unit 5 may also be as follows Fig. 9 The adsorption control circuit of the second example is configured as in the second example shown in . The adsorption control circuit of the second example is different from the first example in that the discharge switch connecting the capacitor 9 and the adsorption electrode 3 is formed by a switching circuit. That is, in the second example, the discharge switch for discharging the charge stored in the capacitor 9 to charge the adsorption electrode 3 includes a switching circuit, and the switching circuit has solid-state relays 14a and 14b, batteries 15a and 15b for operating these solid-state relays 14a and 14b, and circuit switches 16a and 16b for connecting these batteries to the solid-state relays, wherein as the circuit switches 16a and 16b, for example, timer switches, laser sensing switches, reed switches operated by magnetic force, and other remotely operated switches that can be externally operated are used.

[0104] Here, the solid-state relays 14a and 14b are contactless relays without a movable contact part, so they can be turned on / off electronically by the operation of the electronic circuit. That is, in order to allow the conduction current between the capacitor 9 and the adsorption electrode 3 to flow to the solid-state relays 14a and 14b, it is sufficient to use a switch with a high withstand voltage specification as described in the first example, and the circuit switch 16a and 16b of the remote operation type that can be externally operated do not need to be a high withstand voltage, and a general switch can be used. As such a solid-state relay, specifically, a commercially available product such as the trade name AQV258A manufactured by Panasonic Corporation can be cited.

[0105] The adsorption control circuit of the second example is the same as the first example except that the discharge switch is formed by the exchange circuit. That is, the capacitor 9 is charged at atmospheric pressure by connecting to an external power source, the adsorption electrode 3 is charged by the discharge of the capacitor 9 in the vacuum closed space, and the electrostatic adsorption force is released after the foreign matter in the vacuum processing chamber is adsorbed, etc., can be performed in the same manner as described in the first example.

[0106] In addition, the adsorption control circuit forming the adsorption control unit 5 may also be as follows Fig.10 The third example is constructed as shown in the figure. In the third example, the adsorption control unit has a built-in power supply for making the electrostatic adsorption force appear, which is different from the first and second examples. That is, the adsorption control circuit of the third example includes: a booster circuit 17 for boosting the voltage, a battery 18 for operating the booster circuit 17, and a voltage application switch 19 for charging the adsorption electrode 3 by the high voltage output from the booster circuit 17.

[0107] Here, as the voltage application switch 19, a remotely operated switch (control switch) that can be externally operated is used, for example, a timer switch, a laser sensing switch, a reed switch that operates by magnetic force, etc., but a reed switch is preferred. However, in this case, since it is a switch used to connect the battery 18 to the boost circuit 17, it is not particularly necessary to use a switch with a high withstand voltage specification. In addition, with respect to the boost circuit 17, after the adsorption electrode 3 is charged and the electrostatic adsorption force is manifested, a circuit that can output a high voltage of about (+) 1kV to 5kV from the output terminal 17a of V+ and a high voltage of about (-) 1kV to 5kV from the output terminal 17b of V- is preferred. As such a boost circuit 17, there is no particular limitation, and a well-known circuit such as a Cockcroft-Walton circuit can be used.

[0108] When using include Fig.10 When removing foreign matter from a vacuum processing chamber of a semiconductor manufacturing device, the cleaning device with a power supply built-in adsorption control circuit shown in the figure is placed in a vacuum closed space such as an intermediate transfer chamber or a vacuum processing chamber, and the voltage application switch 19 is turned on in a vacuum state. As a result, an electrostatic adsorption force is exerted on the surface of the insulator forming the foreign matter adsorption portion 4, so the cleaning device is placed in the vacuum processing chamber of the semiconductor manufacturing device to adsorb foreign matter. After the adsorption of foreign matter in the vacuum processing chamber is completed, the cleaning device is taken out of the vacuum processing chamber in a state where the foreign matter is adsorbed, and the voltage application switch 19 is turned off, thereby releasing the electrostatic adsorption force and removing the foreign matter from the foreign matter adsorption portion 4. The voltage application switch 19 can be turned off in a vacuum state or in an atmospheric pressure state.

[0109] Furthermore, the adsorption control circuit forming the adsorption control unit 5 may also be as follows Fig.11 The fourth example is constructed as shown in the fourth example. The fourth example is an example in which the adsorption control unit has a built-in power supply as in the third example, but is different in the following aspects: a diode 20a and a diode 20b are provided between the boost circuit 17 and the adsorption electrode 3, and a ground terminal 21 for releasing the charge of the adsorption electrode 3 that has been charged, and a ground switch 22a and a ground switch 22b that connect the adsorption electrode 3 and the ground terminal 21 are provided. That is, by providing the diode 20a and the diode 20b, the charging of the adsorption electrode 3 using the high voltage output from the boost circuit 17 is maintained by the rectification effect, so that after the adsorption electrode 3 is charged, it is not necessary to continue to maintain the voltage application switch 19 in the turned-on state. In addition, by providing the ground terminal 21, after the adsorption of foreign matter in the vacuum processing chamber is completed, the ground switch 22a and the ground switch 22b are turned on, thereby releasing the charge in the adsorption electrode 3 to release the electrostatic adsorption force, and remove the foreign matter adsorbed to the foreign matter adsorption unit 4. Except for these, the case is the same as the third example.

[0110] Example

[0111] (Test Example 1)

[0112] In order to compare the electrostatic adsorption force that occurs in the vacuum processing chamber, an adsorption force test was conducted as follows: the electrostatic adsorption force when the adsorption electrode is charged under atmospheric pressure and the electrostatic adsorption force when the adsorption electrode is charged under vacuum. Fig.12 The test device used in the test is shown in the figure. A test cleaning device is arranged in a vacuum chamber 23 connected to a rotary pump (not shown). Above the test cleaning device, a 50 mm × 48 mm (24 cm) 2 ) of the silicon wafer 24. The test cleaning device includes a foreign matter adsorption portion 4 on the upper surface of an aluminum base (base portion) 1 of about 120 mm × 120 mm and a thickness of about 5 mm, and a double-sided tape 26 is attached to the lower surface of the aluminum base 1 on the opposite side, and is fixed to the bottom surface of the inner wall of the vacuum chamber 23. In addition, in order to prevent damage to the silicon wafer 24 (to prevent contamination in the vacuum chamber caused by cracks or fragments of the wafer), a protective film made of polyimide is attached to the side opposite to the surface facing the test cleaning device.

[0113] When preparing the cleaning device for the test, first, a polyimide film with a thickness of 50 μm and a copper foil with a thickness of about 10 μm were laminated, and the copper foil portion was etched to form an adsorption electrode with two angled electrodes of about 58 mm×110 mm facing each other. Next, the polyimide film after the copper foil was etched and the polyimide film with a thickness of 50 μm were bonded using a bonding sheet with a thickness of about 10 μm, and then cut into a size of about 120 mm×120 mm along the periphery of the adsorption electrode 3, thereby preparing a foreign matter adsorption section 4 including an adsorption electrode inside an insulator including two polyimide films. In addition, a pair of diagonal electrodes 3a and 3b of the adsorption electrode 3 forming the foreign matter adsorption unit 4 are connected to a silicone cable 27a and a silicone cable 27b, respectively, and the front ends of the silicone cables 27a and 27b are pulled out of the vacuum chamber 23 and connected to a reed switch (trade name KSK-1A83-100150 manufactured by Standex Electronics) 28a and a reed switch 28b, respectively. Furthermore, these silicone cables 27a and 27b are inserted into a cylindrical metal part (not shown), and the metal part is inserted into the vacuum chamber, and the gap between them is sealed by an O-ring.

[0114] In the case of charging the adsorption electrode 3 under atmospheric pressure using the test device prepared in the above manner, first, (1) the reed switch 28a and the reed switch 28b of the test cleaning device are connected to the ground in advance and the switch is turned on, and after removing the charge of the adsorption electrode 3 (resetting), the reed switch 28a and the reed switch 28b are turned off again. Next, (2) a high voltage power supply (not shown) is connected to the input terminal side of the reed switch 28a and the reed switch 28b, and the reed switch 28a and the reed switch 28b are turned on to apply a DC ±400V to the adsorption electrode 3 (3a, 3b), and this is maintained for 10 seconds (the reed switch is turned on for 10 seconds). Then, (3) after the reed switches 28a and 28b are turned off (after the voltage application is finished), the switch of the high voltage power supply is turned off (the reason is that if the high voltage power supply is turned off while the reed switches are kept on, the charge disappears, and if the reed switches are turned off and the power supply is kept on, the charge remains on the side of the reed switches connected to the power supply). Then, (4) 2 minutes after the reed switches 28a and 28b are turned off, the rotary pump (not shown) is operated to start vacuuming, and the pressure in the vacuum chamber 23 is reduced to about 40Pa to 50Pa after about 3 minutes. Therefore, (5) 5 minutes after the reed switches 28a and 28b are turned off, the force gauge 25 is lowered, and the silicon wafer 24 is placed on the foreign matter adsorption section 4 of the test cleaning device. Next, (6) 5 minutes and 30 seconds after the reed switches 28a and 28b were turned off, the force gauge 25 was raised to lift the silicon wafer 24, and the suction force was measured.

[0115] On the other hand, in the case of charging the adsorption electrode under vacuum, the chamber 23 is first made into a vacuum state, and then the adsorption force is measured in the same manner as described above. That is, first, (4) the rotary pump is operated to reduce the pressure in the vacuum chamber 23 to about 40 Pa, (1) the reed switches 28a and 28b are connected to the ground and turned on, and the adsorption electrode 3 is de-charged, and then the reed switches 28a and 28b are turned off again, (2) a high voltage power supply not shown is connected to the input terminal side of the reed switches 28a and 28b, and the reed switches 28a and 28b are turned on to apply a DC of ±400V to the adsorption electrode 3 (3a, 3b), and this is maintained for 10 seconds. Then, (3) after the reed switches 28a and 28b are turned off, the switch of the high voltage power supply is turned off, and then the reed switches 28a and 28b are separated from the high voltage power supply. Then, (5) 5 minutes after the reed switch 28a and the reed switch 28b are disconnected, the force gauge 25 is lowered and the silicon chip 24 is placed on the foreign matter adsorption section 4 of the test cleaning device. (6) 5 minutes and 30 seconds after the reed switch 28a and the reed switch 28b are disconnected, the force gauge 25 is raised to lift the silicon chip 24 and measure the adsorption force.

[0116] exist Fig.13 In FIG. 1 , an overview of the measurement conditions and pressure conditions for comparing the electrostatic adsorption force generated under atmospheric pressure with the electrostatic adsorption force generated under vacuum is shown. Fig.14 The results of these measurements are shown in Figure 2. The adsorption force was measured twice under atmospheric pressure and twice under vacuum. Fig.14 In the graph, the average value of the adsorption force per unit area of ​​the silicon wafer (Si wafer) is expressed. As can be seen from the graph, the electrostatic adsorption force generated under vacuum is much better than the electrostatic adsorption force generated under atmospheric pressure (6 to 7 times). Fig.14 In FIG. 1 , the value when the adsorption force is measured without performing the connection with the high voltage power supply in the procedure (2) in the case of charging the adsorption electrode under vacuum is also shown.

[0117] (Test Example 2)

[0118] Regarding the surface potential when the adsorption electrode is charged, in order to compare the case of the atmospheric pressure-maintaining condition maintained under atmospheric pressure with the case of the vacuum-returning condition from atmospheric pressure to vacuum, the surface potential was measured in the following manner. In addition, due to the surface potential measuring device used (KSD-3000 manufactured by Kasuga Electric Co., Ltd.), the surface potential cannot be measured under vacuum, so the above conditions are adopted here.

[0119] exist Fig.151 shows the test device used in the test. First, the test cleaning device includes a foreign matter adsorption unit 4 on the lower surface side of an aluminum base (base part) 1 of about 120 mm×120 mm and about 5 mm thick. The foreign matter adsorption unit 4 is made in the same manner as in the case of Test Example 1. In addition, similarly to the case of Experimental Example 1, a silicone cable 27a and a silicone cable 27b are respectively connected to a pair of diagonal electrodes 3a and 3b of the adsorption electrode 3 forming the foreign matter adsorption portion 4, and a reed switch (product name KSK-1A83-100150 manufactured by Standex Electronics) 28a and a reed switch 28b are connected to the front ends of the silicone cable 27a and the silicone cable 27b. However, in Experimental Example 2, as described later, the reed switch 28a and the reed switch 28b are included and arranged in the vacuum chamber 23, so the solder or the exposed wire of the part connecting the silicone cable 27a and the silicone cable 27b to the reed switch 28a and the reed switch 28b is insulated 29 by using ethylene vinyl acetate (EVA) resin infusion. Furthermore, an aluminum spacer (protrusion) 30 is provided on the peripheral portion of the lower surface of the aluminum base 1 , and when the test cleaning device is placed in the vacuum chamber 23 , a distance d of about 5 mm is left between the inner wall bottom of the vacuum chamber 23 and the foreign matter adsorption unit 4 .

[0120] Using the cleaning apparatus of Test Example 2 prepared as described above, the surface potential when the adsorption electrode was charged was measured in the following manner.

[0121] First, regarding the case where the cleaning device is always maintained at atmospheric pressure, (1) a high voltage power source (not shown) is connected to the input terminal side of the reed switch 28a and the reed switch 28b, and the reed switch 28a and the reed switch 28b are turned on to apply a DC voltage of ±3.5 kV to the adsorption electrode 3 (3a, 3b), and the surface potential of the foreign matter adsorption portion 4 is measured in the state where the voltage is applied (measurement (i)). Next, (2) the reed switch 28a and the reed switch 28b are turned off, and after the high voltage power source is turned off, the high voltage power source is separated from the reed switch 28a and the reed switch 28b, and the surface potential of the foreign matter adsorption portion 4 is measured immediately after the reed switch is turned off (measurement (ii)). Then, (3) the cleaning device for the test is placed in a vacuum chamber 23 connected to a rotary pump (not shown), and the atmospheric pressure state is maintained and the device is left on standby for 5 minutes. Finally, (4) the test cleaning device is taken out from the vacuum chamber 23, and the surface potential of the foreign matter adsorption unit 4 is measured 10 minutes after the reed switch 28a and the reed switch 28b are turned off in (2) [measurement (iii)].

[0122] On the other hand, regarding the case where the cleaning device in the atmospheric pressure state is temporarily changed to the vacuum state and then restored to the atmospheric pressure, in the previous (3), the test cleaning device is placed in the vacuum chamber 23 and the rotary pump is operated for 5 minutes. Except for this, it is set to be the same as the above (1) to (4). That is, (1) the surface potential of the foreign matter adsorption portion 4 is measured while a high voltage power supply is connected to apply a direct current of ±3.5 kV to the adsorption electrodes 3 (3a, 3b) (measurement (i)). Next, (2) the surface potential of the foreign matter adsorption portion 4 is measured just after the reed switch 28a and the reed switch 28b are disconnected (measurement (ii)). Then, (3) the test cleaning device is placed in the vacuum chamber 23 and the rotary pump is operated. After the pressure is reduced for 5 minutes so that the pressure in the vacuum chamber 23 becomes a vacuum of about 40 Pa, (4) the vacuum chamber 23 is restored to atmospheric pressure again, the test cleaning device is taken out of the vacuum chamber 23, and the surface potential of the foreign matter adsorption portion 4 is measured 10 minutes after the reed switch 28a and the reed switch 28b are disconnected in (2) (measurement (iii)).

[0123] exist Fig.16 In FIG. 1 , an overview of the measurement conditions and pressure conditions for comparing the surface potential when the pressure environment is changed is shown. Fig.17 and Fig.18 The results of these measurements are shown in . Fig.17 The surface potential measurement results of the cleaning device under the condition of maintaining atmospheric pressure all the time show that the surface potential is roughly the same. In particular, the surface potential 10 minutes after the reed switch is disconnected shows a high value of about 92% of that under the voltage application state. Fig.18 The results are from the vacuum condition. After 10 minutes from the time the reed switch was turned off, the surface potential dropped to about 14% of the value in the voltage-applied state.

[0124] like Fig.18 The reasons for the decrease in surface potential shown in can be listed as two reasons: the change from atmospheric pressure to vacuum and the change from vacuum to atmospheric pressure. However, if the results of the previous test example 1 are considered, it can be considered that the surface potential also decreases at least when the environment changes from atmospheric pressure to vacuum. That is, as can be seen from these test examples, the electrostatic adsorption force obtained by charging under atmospheric pressure decreases sharply due to entering a vacuum state (the reason is not yet fully clear). Furthermore, the surface potential in the test example 2 represents the difference in surface potential between a pair of diagonal electrodes 3a and 3b of the adsorption electrode.

Claims

1. A cleaning device for removing foreign matter in a vacuum processing chamber of a semiconductor manufacturing device, characterized in that: include: A foreign matter adsorption unit, wherein an adsorption electrode including a pair of electrodes is provided inside an insulator of the foreign matter adsorption unit; and an adsorption control unit, which turns on a control switch to charge the adsorption electrode, so that the surface of the insulator exhibits an electrostatic adsorption force and can adsorb foreign matter; and The control switch of the adsorption control unit is a remote-operated switch capable of external operation. When the control switch is turned on for the cleaning device in the vacuum-enclosed space enclosed in a vacuum state, foreign matter in the vacuum processing chamber can be removed by the electrostatic adsorption force generated in the vacuum state. The adsorption control unit includes a connection terminal connected to an external power source, a capacitor charged by the voltage of the external power source and storing electric charge, and a discharge switch for discharging the electric charge stored in the capacitor to charge the adsorption electrode, and the discharge switch constitutes the control switch. After the capacitor is charged by connecting an external power source to the connection terminal under atmospheric pressure, the cleaning device is placed in a vacuum closed space and the discharge switch is turned on, thereby causing the electrostatic adsorption force to appear in a vacuum state.

2. The cleaning device according to claim 1, wherein the discharge switch is a reed switch operated by magnetic force, and the conduction current between the capacitor and the adsorption electrode flows toward the reed switch.

3. A cleaning device according to claim 1, wherein the discharge switch includes a switching circuit, the switching circuit has a solid-state relay, a battery for operating the solid-state relay, and a circuit switch connecting the two, and the circuit switch is any remote-operated switch selected from the group consisting of a timer switch, a laser sensing switch, and a reed switch that operates by magnetic force.

4. A cleaning device according to any one of claims 1 to 3, wherein the adsorption control unit includes a grounding terminal for releasing the charge of the charged adsorption electrode, and a grounding switch connecting the adsorption electrode and the grounding terminal, and after adsorbing foreign matter in the vacuum processing chamber, the grounding switch is turned on, thereby removing foreign matter from the surface of the insulator of the foreign matter adsorption unit.

5. A cleaning device according to any one of claims 1 to 3, wherein the foreign matter adsorption portion and the adsorption control portion are integrally arranged on opposite sides of the base portion via a base portion, and the insulator of the foreign matter adsorption portion is arranged to face the chip mounting table in the vacuum processing chamber to remove foreign matter on the chip mounting table. 6 . The cleaning device according to claim 5 , further comprising a protrusion for separating a surface of the insulator of the foreign matter adsorption portion and the wafer mounting table from each other. 7 . The cleaning device according to claim 6 , wherein a surface of the insulator of the foreign matter adsorption portion includes an adhesive layer having adhesive properties.

8. A cleaning device for removing foreign matter in a vacuum processing chamber of a semiconductor manufacturing device, characterized in that: include: A foreign matter adsorption unit, wherein an adsorption electrode including a pair of electrodes is provided inside an insulator of the foreign matter adsorption unit; and an adsorption control unit, which turns on a control switch to charge the adsorption electrode, so that the surface of the insulator exhibits an electrostatic adsorption force and can adsorb foreign matter; and The control switch of the adsorption control unit is a remote-operated switch capable of external operation. When the control switch is turned on for the cleaning device in the vacuum-enclosed space enclosed in a vacuum state, foreign matter in the vacuum processing chamber can be removed by the electrostatic adsorption force generated in the vacuum state. The adsorption control unit includes a boost circuit for boosting voltage, a battery for operating the boost circuit, and a voltage applying switch for charging the adsorption electrode by a high voltage output from the boost circuit, and the voltage applying switch constitutes the control switch. The cleaning device is placed in a vacuum closed space and a voltage application switch is turned on, thereby causing an electrostatic adsorption force to appear in a vacuum state.

9. The cleaning apparatus according to claim 8, wherein the voltage application switch is any remote-operated switch selected from the group consisting of a timer switch, a laser sensing switch, and a reed switch operated by magnetic force.

10. The cleaning device according to claim 8 or 9, wherein the adsorption control unit has a diode between the boost circuit and the adsorption electrode, and the charging of the adsorption electrode using the high voltage output from the boost circuit is maintained by a rectification action.

11. A cleaning device according to claim 8 or 9, wherein the adsorption control unit includes a grounding terminal for releasing the charge of the charged adsorption electrode, and a grounding switch connecting the adsorption electrode and the grounding terminal, and after adsorbing foreign matter in the vacuum processing chamber, the grounding switch is turned on, thereby removing foreign matter from the surface of the insulator of the foreign matter adsorption unit.

12. A cleaning device according to claim 8 or 9, wherein the foreign matter adsorption portion and the adsorption control portion are integrally arranged on opposite sides of the base portion via a base portion, and the insulator of the foreign matter adsorption portion is arranged to face the chip mounting table in the vacuum processing chamber to remove foreign matter on the chip mounting table. 13 . The cleaning device according to claim 12 , further comprising a protrusion for separating a surface of the insulator of the foreign matter adsorption portion and a wafer mounting table from each other. 14 . The cleaning device according to claim 13 , wherein a surface of the insulator of the foreign matter adsorption portion includes an adhesive layer having adhesiveness.

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