Leakage protection device, electrical connection equipment and electrical appliances

Abstract

The present application discloses a leakage protection device, an electrical connection device and an electrical appliance. The leakage protection device includes: a leakage detection module, which is used to detect the leakage current signal on the main line and then output the leakage fault signal; a self-test module, which is used to periodically generate an analog leakage current signal, and when the leakage detection module fails, the self-test module outputs a self-test fault signal; a trip module, which includes: a switch, coupled between an input end and an output end; a first coil, which is used to drive the switch to control the power connection between the input end and the output end; a driving module, which is used to drive the trip module to disconnect the power connection under the influence of the leakage fault signal and / or the self-test fault signal; and a trip detection module, which is configured to generate a coil fault signal when detecting that the first coil is short-circuited, so that the switch disconnects the power connection.

Description

Technical Field

[0001] The present application relates to the electrical field, and in particular to a leakage protection device, an electrical connection device and an electrical appliance with a self-checking function. Background Art

[0002] As people's awareness of electricity safety increases, the use of leakage protection devices is becoming more and more widespread. In order to improve the safety performance of leakage protection devices, industry technicians have begun to study adding automatic detection functions to leakage protection devices, so that when the leakage detection protection function of the leakage protection device is lost, the output is without electricity, thereby improving the safety of the product. Existing leakage protection devices with self-detection functions still have some defects. For example, the key parts of the leakage protection device, such as the tripping coil and driving components, are in a working state for a long time and are easy to be damaged. In particular, the enameled wire wound by the tripping coil inside the leakage protection device is thin and has a high operating temperature, which is more prone to damage (for example, circuit breaking), causing the leakage protection device to lose its protection function, thereby failing to disconnect the input and output power connections, posing a safety hazard of electric shock. Summary of the invention

[0003] Based on the above problems, the present application proposes to add a tripping coil to ensure that when a tripping coil is damaged (eg, broken), the leakage protection device can disconnect the power connection.

[0004] On the one hand, the present application discloses a leakage protection device, comprising: a leakage detection module, which is used to detect a leakage current signal on a main line and then output a leakage fault signal; a self-test module, which is used to periodically generate an analog leakage current signal, and when the leakage detection module fails, the self-test module outputs a self-test fault signal; a trip module, which comprises: a switch (RESET), coupled between an input end and an output end; a first coil (SOL1), which is used to drive the switch to control the power connection between the input end and the output end; a driving module, which is used to drive the trip module to disconnect the power connection under the influence of the leakage fault signal and / or the self-test fault signal; and a trip detection module, which is configured to generate a coil fault signal when detecting that the first coil is short-circuited, so that the switch disconnects the power connection.

[0005] In one embodiment, the trip detection module includes: a second coil (SOL2); a first semiconductor element (Q3), a first pole of which is coupled to the main line, a second pole is coupled to the second coil, and a control pole is used to receive the coil fault signal, wherein the first semiconductor element (Q3) responds to the coil fault signal to enable the second coil to drive the switch to disconnect the power connection.

[0006] In one embodiment, the trip detection module includes: a second semiconductor element (Q2), whose control electrode is coupled to the first coil, a first electrode is coupled to the control electrode of the first semiconductor element (Q3) to provide the coil fault signal, and a second electrode is coupled to the ground potential.

[0007] In one embodiment, the first electrode of the second semiconductor element (Q2) is coupled to the control electrode of the first semiconductor element (Q3) via a first diode (D8) and / or a first resistor.

[0008] In one embodiment, the driving module further includes: a third semiconductor element (Q1), a first pole of which is coupled to the first coil, a second pole is coupled to the ground potential, and a control pole is used to receive the leakage fault signal and / or the self-test fault signal.

[0009] In one embodiment, the trip detection module further includes: a fourth semiconductor element (Q4), a first pole of which is coupled to the second coil, a second pole of which is coupled to a ground potential, and a control pole of which is coupled to the first pole of the second semiconductor element (Q2) to receive the coil fault signal, wherein the first coil is coupled in series with the second coil, and the first semiconductor element (Q3) is coupled in parallel with the first coil.

[0010] In one embodiment, the control electrode of the third semiconductor element (Q1) receives the leakage fault signal via the first filter circuit (R10, C11), and is coupled to the control electrode of the fourth semiconductor element (Q4) via the second filter circuit (R20, C12), and the control electrode of the fourth semiconductor element (Q4) receives the self-test fault signal and the leakage fault signal via the second filter circuit, wherein the time characteristic of the first filter circuit is greater than the time characteristic of the second filter circuit. According to this embodiment, when the third semiconductor element Q1 is damaged or disconnected, the fourth semiconductor element Q4 can be turned on under the control of the leakage fault signal, thereby causing the coils SOL1 and SOL2 to drive the switches to disconnect; when Q1 is short-circuited, the coil SOL1 will drive the switches to disconnect; when the third semiconductor element Q1 works normally, since the time characteristic of the first filter circuit is greater than the time characteristic of the second filter circuit, the fourth semiconductor element Q4 is controlled by the self-test fault signal.

[0011] In one embodiment, the control electrode of the third semiconductor element (Q1) is coupled to the control electrode of the fourth semiconductor element (Q4) via a third diode (D4) and / or a third resistor.

[0012] In one embodiment, any one of the first to fourth semiconductor elements is selected from the following: a thyristor, a bipolar transistor, a field effect transistor, a photocoupler element, and a relay.

[0013] In one embodiment, the leakage detection module includes a leakage detection coil (CT1) and a first processor (U1), wherein the first processor (U1) generates the leakage fault signal based on the leakage current signal detected by the leakage detection coil (CT1); the self-test module includes a second processor (U2) to periodically generate the simulated leakage current signal, and when the leakage detection module fails, the second processor (U2) generates the self-test fault signal.

[0014] In one embodiment, the first processor (U1) and the second processor (U2) are packaged in the same processor.

[0015] On the other hand, the present application proposes a leakage protection device, including: a leakage detection module, which is used to detect a leakage current signal on a main line and then output a leakage fault signal; a self-test module, which is used to periodically generate an analog leakage current signal, and when the leakage detection module fails, the self-test module outputs a self-test fault signal; a switch (RESET), coupled between an input end and an output end; a drive control module, which is used to drive the switch to disconnect the power connection between the input end and the output end under the influence of the leakage fault signal and / or the self-test fault signal, wherein the drive control module includes: a first coil (SOL1); a second coil (SOL2), which is coupled in series to the first coil, wherein the drive control module is configured to generate a coil fault signal when a fault is detected in one of the first coil and the second coil, and then drive the switch through the other coil to disconnect the power connection.

[0016] In one embodiment, the present invention further includes: a third semiconductor element (Q1) coupled in series to the second coil; a first semiconductor element (Q3) coupled in series to the second coil and coupled in parallel to the first coil, wherein the control electrode of the first semiconductor element is used to receive the coil fault signal; and a fourth semiconductor element (Q4) coupled in series to the first coil (SOL1) and connected in parallel to the second coil (SOL2), wherein the third semiconductor element and the fourth semiconductor element are controlled by the leakage fault signal and / or the self-test fault signal.

[0017] In one embodiment, the invention further comprises: a second semiconductor element (Q2), whose control electrode is coupled to the first coil (SOL1), whose first electrode is coupled to the control electrode of the first semiconductor element (Q3) to provide the coil fault signal, and whose second electrode is coupled to the ground potential.

[0018] In one embodiment, the first electrode of the second semiconductor element (Q2) is coupled to the control electrode of the first semiconductor element (Q3) via a first diode (D8) and / or a resistor.

[0019] In one embodiment, the control electrode of the third semiconductor element (Q1) receives the leakage fault signal and the self-test fault signal via a first filter circuit (R10, C11), and the control electrode of the fourth semiconductor element (Q4) receives the leakage fault signal and the self-test fault signal via a second filter circuit (R20, C12), wherein the time characteristic of the first filter circuit is greater than the time characteristic of the second filter circuit.

[0020] In one embodiment, the leakage detection module includes a leakage detection coil (CT1) and a first processor (U1), wherein the first processor (U1) generates the leakage fault signal based on the leakage current signal detected by the leakage detection coil (CT1); the self-test module includes a second processor (U2) to periodically generate the simulated leakage current signal, and when the leakage detection module fails, the second processor (U2) generates the self-test fault signal.

[0021] In one embodiment, the first processor (U1) and the second processor (U2) are packaged in the same processor.

[0022] In one embodiment, any one of the first to fourth semiconductor elements is selected from the following: a thyristor, a bipolar transistor, a field effect transistor, a photocoupler element, and a relay.

[0023] On the other hand, the present application provides an electrical connection device, comprising: a housing; and a leakage protection device as described in any one of the above items, which is accommodated in the housing.

[0024] On the other hand, the present application proposes an electrical appliance, including: a load electrical appliance; an electrical connection device coupled between a trunk line and the load electrical appliance to supply power to the load electrical appliance, wherein the electrical connection device includes a leakage protection device as described in any of the above items.

[0025] By adopting the technical solution of the present application, when a coil in the leakage protection device fails, it can still be tripped to ensure the safety of electricity use. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The embodiments are shown and explained with reference to the accompanying drawings. These drawings are used to illustrate the basic principles, and only the aspects necessary for understanding the basic principles are shown. These drawings are not to scale. In the drawings, the same reference numerals represent similar features. In addition, the connection between each box in the architecture diagram indicates that the two boxes are electrically or magnetically coupled, and the absence of a connection between the two boxes does not mean that the two boxes are not coupled.

[0027] Figure 1 A schematic diagram of a leakage protection device according to an embodiment of the present application;

[0028] Figure 2 A schematic diagram of a leakage protection device according to the first embodiment of the present application;

[0029] Figure 3 A schematic diagram of a leakage protection device according to a second embodiment of the present application;

[0030] Figure 4 A schematic diagram of a leakage protection device according to a third embodiment of the present application;

[0031] Figure 5 A schematic diagram of a leakage protection device according to a fourth embodiment of the present application;

[0032] Fig. 6A A schematic diagram of an electrical connection device according to an embodiment of the present application;

[0033] Figure 6B is a structural diagram of an electrical appliance according to an embodiment of the present application. DETAILED DESCRIPTION

[0034] In the following specific description of preferred embodiments, reference will be made to the attached drawings that constitute a part of the present application. The attached drawings show specific embodiments that can implement the present application by way of example. The illustrative embodiments are not intended to be exhaustive of all embodiments according to the present application. It will be appreciated that other embodiments may be utilized, and structural or logical modifications may also be made without departing from the scope of the present application. Therefore, the following specific description is not restrictive, and the scope of the present application is limited by the attached claims.

[0035] The terms involved in this application are explained. A transistor may refer to a transistor of any structure, such as a field effect transistor (FET), a bipolar junction transistor (BJT) or a thyristor. When the transistor is a field effect transistor, its control electrode refers to the gate of the field effect transistor, the first electrode may be the drain or source of the field effect transistor, and the corresponding second electrode may be the source or drain of the field effect transistor; when the transistor is a bipolar transistor, its control electrode refers to the base of the bipolar transistor, the first electrode may be the collector or emitter of the bipolar transistor, and the corresponding second electrode may be the emitter or collector of the bipolar transistor; when the transistor is a thyristor, its control electrode refers to the control electrode G of the thyristor, the first electrode is the anode, and the second electrode is the cathode. The simulated leakage current signal is a periodic signal generated by the self-test module, and its duration is short. Therefore, although the leakage detection module can detect the simulated leakage current signal, it is not necessary for the leakage protection device to disconnect the power connection; the real leakage current signal is a non-periodic signal generated on the power supply line, and its duration is longer. When the real leakage current signal is generated, the leakage protection device needs to disconnect the power connection.

[0036] The present application aims to provide a leakage protection device with a self-checking function, which ensures that when a trip coil is damaged (eg, broken), the leakage protection device can disconnect the power connection by adding a trip coil.

[0037] Figure 1 2 is a structural diagram of a leakage protection device according to an embodiment of the present application.

[0038] like Figure 1 As shown, the leakage protection device includes a leakage detection module 1, a self-test module 2, a driving module 3 and a tripping module 4. The leakage detection module 1 is coupled to the coupled trunk line, and is used to detect whether there is a leakage current signal on the trunk line. When the leakage current signal is detected, a leakage fault signal is provided to the driving module 3. The self-test module 2 is coupled to the trunk line and the leakage detection module 1, and is used to periodically generate an analog leakage current signal to detect whether the leakage detection module 1 fails. When the leakage detection module 1 fails, the self-test module 2 provides a self-test fault signal to the driving module 3. The driving module 3 controls the tripping module 4 based on the leakage fault signal and / or the self-test fault signal. The tripping module 4 is coupled between the input end and the output end of the trunk line, and controls the power connection through the signal provided by the driving module 3. The tripping detection module 5 is coupled to the trunk line and the tripping module 4, and is used to detect whether the tripping module 4 is working normally. When the tripping detection module 5 detects that the first coil in the tripping module 4 fails, it will generate a coil fault signal, thereby causing the tripping module 4 to disconnect the power connection.

[0039] Figure 2 It is a schematic diagram of a leakage protection device according to the first embodiment of the present application.

[0040] like Figure 2 As shown, the leakage detection module 1 includes detection coils CT1 and CT2 coupled to the trunk line and a processor U1. When the detection coils CT1 and CT2 detect a leakage current signal, the processor U1 generates a leakage fault signal. It can be understood that the leakage current signal here can be a real leakage current signal or a simulated leakage current signal generated by the self-test module 2.

[0041] The trip module 4 includes a switch RESET and a first coil SOL1 , wherein the switch RESET is used to disconnect or maintain the power connection between the input end and the output end, and the first coil SOL1 is used to control the state of the switch RESET.

[0042] The trip detection module 5 includes: a second coil SOL2 and at least one transistor connected in series with the second coil SOL2. When the first coil SOL1 is damaged (i.e., open circuit), the second coil SOL2 works, thereby disconnecting the power connection between the input end and the output end. In other words, when the first coil SOL1 cannot work, the second coil SOL2 can still work. Specifically, the first transistor Q3 is coupled in series with the second coil SOL2 and coupled in parallel with the first coil SOL1, and the second coil SOL2 is coupled in series with the first coil SOL1 and coupled to the ground via the second transistor Q4. Therefore, when the first coil SOL1 is damaged, by setting the states of Q3 and Q4, current can flow through the second coil SOL2, thereby disconnecting the switch RESET.

[0043] The control electrode of transistor Q2 is coupled to the first coil SOL1, the first electrode is coupled to the control electrodes of transistors Q3 and Q4, and the second electrode is coupled to ground. Specifically, the first electrode of transistor Q2 is coupled to the control electrode of transistor Q3 via diode D8, and is coupled to the control electrode of transistor Q4 via diode D7. It can be understood that the first electrode of transistor Q2 can be coupled to the control electrode of transistor Q3 via diode D8 and / or a resistor, and is coupled to the control electrode of transistor Q4 via diode D7 and / or a resistor. When switch K1 is closed, the control electrode of transistor Q2 is coupled to the power supply via resistor R9 and coil SOL1, so that the potential of node A is at a low potential, and transistors Q3 and Q4 are both in a closed state.

[0044] The self-test module 2 includes a processor U2 and a transistor Q7 to periodically generate an analog leakage current signal. Specifically, when the power is supplied, the capacitor C10 is charged through the resistor R16 in the self-test module 2. When the potential is charged to a value higher than a preset value, the processor U2 outputs a high potential to turn on the transistor Q5. In another embodiment, the processor U2 can also collect the voltage on the capacitor C10 and the resistor R14, and then encode the collected voltage to generate an output signal for controlling the transistor Q5. After the transistor Q5 is turned on, the detection coil CT1 detects the analog leakage current signal, and then the processor U1 outputs a leakage fault signal.

[0045] The leakage fault signal is coupled to the transistor Q7 in the self-test module 2 and the transistor Q1 in the driving module 3 respectively. The control electrode potential rising speed of the transistor Q1 can be made slower than the control electrode potential rising speed of the transistor Q7 through a subcircuit (for example, a resistor R10 and a capacitor C11). When the transistor Q7 is turned on (the transistor Q1 is not turned on), the transistor Q7 will continue to discharge the capacitor C10, so that the processor U2 outputs a low level and turns off the transistor Q5, thereby stopping providing the analog leakage current signal to the leakage fault detection unit 1. When the resistor 16 in the self-test circuit 2 starts to charge the capacitor C10 again, the next cycle of self-test begins. When the component affecting the self-test process fails and the output signal of the processor U2 cannot be flipped, the processor U2 continues to output a high potential (that is, a self-test fault signal), charges the capacitor C11 via the diode D5, and then realizes the control of the transistor Q1. It can be understood that the above-mentioned subcircuit can not only include resistors and capacitors, but also other active or passive components.

[0046] In one implementation, the processor U1 and the processor U2 may be packaged in one processor, thereby simplifying the circuit structure, reducing product power consumption, and reducing the size of the product.

[0047] Below Figure 2 The working process of the leakage protection device is explained.

[0048] After the RESET switch is pressed, the power is turned on and the product works normally.

[0049] When the leakage detection module 1 outputs a leakage fault signal (corresponding to the real leakage current signal) through the diode D4 or the self-detection module outputs a self-detection fault signal through D5, the transistor Q1 is turned on to form a L-K1-D1-SOL1-Q1-N current loop, and the coil SOL1 generates a magnetic field to drive the switch RESET to trip, disconnecting the power connection between the input and output to ensure safety.

[0050] When there is no real leakage current signal or self-test fault signal, if the coil SOL1 is disconnected, the control electrode of the transistor Q2 is powered off, the transistor Q2 is cut off, the potential of the node A rises (i.e., a coil fault signal is generated), and the transistors Q3 and Q4 are turned on through the diodes D8 and D7, forming a L-K1-D1-Q3-SOL2-Q4-N current loop, and the coil SOL2 generates a magnetic field, causing the switch RESET to trip and disconnect the power connection between the input and output ends. At this time, if the switch RESET is repeatedly pressed, the leakage protection device will trip repeatedly, so that the output end cannot output power.

[0051] Figure 3 FIG. 4 is a circuit diagram of a leakage protection device according to a second embodiment of the present invention.

[0052] exist Figure 3 In the leakage protection device in the embodiment, the control electrode of the transistor Q4 is coupled to the control electrode of the transistor Q1.

[0053] Below Figure 3 The working process of the leakage protection device is explained.

[0054] After the RESET switch is pressed, the power is turned on and the product works normally.

[0055] When there is a real leakage current signal, the leakage detection module 1 outputs a leakage fault signal, and the time characteristics of the filter circuit (R10, C11) coupled to the control electrode of the transistor Q1 and the filter circuit (R20, C12) coupled to the control electrode of the transistor Q4 are set so that under the influence of the leakage fault signal, the transistor Q1 is turned on before Q4, thereby forming a current loop L-K1-D1-SOL1-Q1-N, and the coil SOL1 generates a magnetic field, driving the switch RESET to trip, and disconnecting the power connection between the input end and the output end.

[0056] When the periodic self-test process cannot be completed (for example, the leakage detection function is lost), the processor U2 in the self-test module 2 will continue to output a high potential and output a self-test fault signal through the diode D5, causing the transistor Q4 to turn on, forming a current loop L-K1-D1-SOL1-SOL2-Q4-N, causing the coils SOL1 and SOL2 to generate a magnetic field, driving the switch RESET to trip, and disconnecting the power connection between the input and output ends.

[0057] When coil SOL1 is disconnected, the control electrode of transistor Q2 is powered off (in the cut-off state), the potential of node A increases, and transistors Q3 and Q4 are turned on through diodes D8 and D7, thereby forming a current loop L-K1-D1-Q3-SOL2-Q4-N. Coil SOL2 generates a magnetic field, driving switch RESET to trip, and disconnecting the power connection between the input and output ends.

[0058] When transistor Q1 fails (for example, open circuit), if the leakage detection module 1 outputs a leakage fault signal, C12 will be charged through D4 and R20, so that transistor Q4 is turned on, forming a current loop L-K1-D1-SOL1-SOL2-Q4-N, and coils SOL1 and SOL2 generate a magnetic field, driving the switch RESET to trip, thereby disconnecting the power connection between the input and output ends.

[0059] When the transistor Q1 is short-circuited, a current loop L-K1-D1-SOL1-N is formed, and the coil SOL1 generates a magnetic field, driving the switch RESET to trip, thereby disconnecting the power connection between the input and output ends.

[0060] In this embodiment, no matter the transistor Q1 is open circuit or short circuit, the coil SOL1 and / or SOL2 can drive the switch RESET to trip. When the transistor Q1 is working normally, since the filter circuit (R10, C11) is greater than the time characteristic of the filter circuit (R20, C12), in this case, the transistor Q4 is controlled by the self-test fault signal.

[0061] Figure 4 FIG. 4 is a circuit diagram of a leakage protection device according to a third embodiment of the present invention.

[0062] like Figure 4 As shown, one end of the second coil SOL2 is coupled to the power supply end, and the transistor Q3 is connected in series with the second coil SOL2. The control electrode of the transistor Q2 is coupled to the first coil SOL1, the first electrode is coupled to the power supply end and the transistor Q3, and the second electrode is coupled to the ground. It can be understood that the transistor Q2 can be coupled to the transistor Q3 through a diode D8 and / or a resistor.

[0063] Below Figure 4 The working process of the leakage protection device is explained.

[0064] Press RESET, turn on the power, and the product will work normally.

[0065] When the leakage detection module 1 outputs a leakage fault signal (corresponding to the real leakage current signal) through the diode D4 or the self-detection module outputs a self-detection fault signal through D5, the transistor Q1 is turned on to form a current loop L-K1-D1-SOL1-Q1-N, and the coil SOL1 generates a magnetic field, driving the switch RESET to trip and disconnect the power connection between the input and output ends.

[0066] When the coil SOL1 is disconnected, the control electrode of the transistor Q2 is powered off (cut off), the potential of the node A increases, and the transistor Q3 is turned on through the diode D8, forming a L-K1-D1-Q3-SOL2-N current loop. The coil SOL2 generates a magnetic field, driving the switch RESET to trip, and disconnecting the power connection between the input and output ends.

[0067] Figure 5 FIG. 4 is a circuit diagram of a leakage protection device according to a fourth embodiment of the present invention.

[0068] As shown in the figure, coil SOL1 and coil SOL2 can control the trip module 4 separately or together. Transistor Q3 is connected in parallel with coil SOL1, and transistor Q4 is connected in parallel with coil SOL2 and Q1. Therefore, when SOL1 is damaged, transistor Q3 is turned on, and coil SOL2 can also trip the switch RESET.

[0069] Below Figure 5 The working process of the leakage protection device is explained.

[0070] Press RESET, turn on the power, and the product will work normally.

[0071] When the leakage detection module 1 outputs a leakage fault signal (corresponding to a real leakage current signal) through the diode D4 or the self-detection module outputs a self-detection fault signal through the diode D5, by setting the filter circuit (R10, C11) and the filter circuit (R20, C12), the transistor Q1 can be turned on before Q4, thereby forming a L-K1-D1-SOL1-SOL2-Q1-N current loop, and the coils SOL1 and SOL2 generate a magnetic field, driving the switch RESET to trip, and disconnecting the power connection between the input end and the output end.

[0072] When coil SOL1 is disconnected, the control electrode of transistor Q2 is de-energized, the potential at point A rises, and Q3 is turned on through diode D8. If a leakage fault signal and / or a self-test fault signal occurs, a current loop L-K1-D1-Q3-SOL2-Q1-N is formed, and coil SOL2 generates a magnetic field, driving switch RESET to trip and disconnecting the power connection between the input and output ends.

[0073] When coil SOL2 is open-circuited, if a leakage fault signal and / or a self-test fault signal occurs, a high potential will continue to be provided to the control electrodes of transistors Q1 and Q4. Since SOL2 is open-circuited, a current loop L-K1-D1-SOL1-Q4-N is formed, and coil SOL1 generates a magnetic field, driving switch RESET to trip and disconnecting the power connection between the input and output ends.

[0074] Similarly, when transistor Q1 is open-circuited, if a leakage fault signal and / or a self-test fault signal occurs, a current loop L-K1-D1-SOL1-Q4-N is also formed, and coil SOL1 generates a magnetic field to drive switch RESET to trip, thereby disconnecting the power connection between the input and output.

[0075] When transistor Q1 is short-circuited, a current loop L-K1-D1-SOL1-SOL2-N is formed, and coils SOL1 and SOL2 generate a magnetic field, which trips the drive switch RESET and disconnects the power connection between the input and output.

[0076] Although the above description uses transistors as an example, it is understandable that the transistor may also be other types of semiconductor components, such as thyristors, triodes, MOS tubes, photocouplers, relays and other controllable switching components.

[0077] Fig. 6A , 6B The schematic diagrams respectively show the architecture of the electrical connection device and the electrical appliance according to the embodiments of the present application.

[0078] As shown in the figure, the electrical connection device 61 includes: a housing 611 and a leakage protection device (not shown) contained in the housing, wherein a through hole is provided on the housing so that a first button corresponding to the switch RESET and a second button corresponding to the test switch TEST can pass through. The electrical appliance 62 includes a load electrical appliance 621 and the electrical connection device 61, wherein the electrical connection device is coupled between the trunk line and the load electrical appliance to supply power to the load electrical appliance.

[0079] Therefore, although the present application is described with reference to specific examples, wherein these specific examples are intended to be illustrative only and not limiting of the present application, it is obvious to those skilled in the art that the disclosed embodiments may be changed, added or deleted without departing from the spirit and scope of protection of the present application.

Claims

1. A leakage protection device, It is characterized in that include: A leakage detection module is used to detect leakage current signals on the main line and then output leakage fault signals; A self-check module, used for periodically generating a simulated leakage current signal, and when the leakage detection module fails, the self-check module outputs a self-check fault signal; A trip module, comprising: a switch (RESET) coupled between the input terminal and the output terminal; a first coil (SOL1) for driving the switch to control the power connection between the input terminal and the output terminal; a driving module, configured to drive the tripping module to disconnect the power connection under the influence of the leakage fault signal and / or the self-test fault signal; A trip detection module is configured to generate a coil fault signal when detecting that the first coil is broken, so that the switch disconnects the power connection, and the trip detection module includes: The second coil (SOL2); A first semiconductor element (Q3) has a first pole coupled to the main line, a second pole coupled to the second coil, and a control pole for receiving the coil fault signal, wherein the first semiconductor element (Q3) responds to the coil fault signal to enable the second coil to drive the switch to disconnect the power connection.

2. The leakage protection device according to claim 1, It is characterized in that The trip detection module comprises: A second semiconductor element (Q2) has a control electrode coupled to the first coil, a first electrode coupled to the control electrode of the first semiconductor element (Q3) to provide the coil fault signal, and a second electrode coupled to the ground potential.

3. The leakage protection device according to claim 2, It is characterized in that The first electrode of the second semiconductor element (Q2) is coupled to the control electrode of the first semiconductor element (Q3) via a first diode (D8) and / or a first resistor.

4. The leakage protection device according to claim 2, It is characterized in that The driving module also includes: A third semiconductor element (Q1) has a first electrode coupled to the first coil, a second electrode coupled to the ground potential, and a control electrode for receiving the leakage fault signal and / or the self-test fault signal.

5. The leakage protection device according to claim 4, It is characterized in that The trip detection module also includes: a fourth semiconductor element (Q4), a first electrode of which is coupled to the second coil, a second electrode of which is coupled to the ground potential, and a control electrode of which is coupled to the first electrode of the second semiconductor element (Q2) to receive the coil fault signal, The first coil is coupled in series with the second coil, and the first semiconductor element (Q3) is coupled in parallel with the first coil.

6. The leakage protection device according to claim 5, It is characterized in that The control electrode of the third semiconductor element (Q1) receives the leakage fault signal via the first filter circuit (R10, C11), and is coupled to the control electrode of the fourth semiconductor element (Q4) via the second filter circuit (R20, C12). The control electrode of the fourth semiconductor element (Q4) also receives the self-test fault signal and the leakage fault signal via the second filter circuit, wherein the time characteristic of the first filter circuit is greater than the time characteristic of the second filter circuit.

7. The leakage protection device according to claim 5, It is characterized in that The control electrode of the third semiconductor element (Q1) is coupled to the control electrode of the fourth semiconductor element (Q4) via a third diode (D4) and / or a third resistor.

8. The leakage protection device according to claim 5, It is characterized in that Any one of the first to fourth semiconductor elements is selected from the following: Thyristors, bipolar transistors, field effect transistors, optocouplers and relays.

9. The leakage protection device according to claim 1, It is characterized in that The leakage detection module comprises a leakage detection coil (CT1) and a first processor (U1), wherein the first processor (U1) generates the leakage fault signal based on the leakage current signal detected by the leakage detection coil (CT1); The self-test module comprises a second processor (U2) for periodically generating the simulated leakage current signal, and when the leakage current detection module fails, the second processor (U2) generates the self-test fault signal.

10. The leakage protection device according to claim 9, It is characterized in that The first processor (U1) and the second processor (U2) are packaged in the same processor.

11. A leakage protection device, It is characterized in that include: A leakage detection module is used to detect leakage current signals on the main line and then output leakage fault signals; A self-check module, used for periodically generating a simulated leakage current signal, and when the leakage detection module fails, the self-check module outputs a self-check fault signal; a switch (RESET) coupled between the input terminal and the output terminal; A drive control module, used to drive the switch to disconnect the power connection between the input end and the output end under the influence of the leakage fault signal and / or the self-test fault signal, wherein the drive control module includes: First coil (SOL1); a second coil (SOL2) coupled in series to the first coil, Wherein, the drive control module is configured to generate a coil fault signal when it is detected that one of the first coil and the second coil is faulty, so that the other coil drives the switch to disconnect the power connection; a third semiconductor element (Q1) coupled in series to the second coil; a first semiconductor element (Q3) coupled in series to the second coil and in parallel with the first coil, wherein a control electrode of the first semiconductor element is used to receive the coil fault signal; and a fourth semiconductor element (Q4) coupled in series to the first coil (SOL1) and connected in parallel to the second coil (SOL2), The third semiconductor element and the fourth semiconductor element are controlled by the leakage fault signal and / or the self-test fault signal.

12. The leakage protection device according to claim 11, It is characterized in that Also includes: A second semiconductor element (Q2) has a control electrode coupled to the first coil (SOL1), a first electrode coupled to the control electrode of the first semiconductor element (Q3) to provide the coil fault signal, and a second electrode coupled to the ground potential.

13. The leakage protection device according to claim 12, It is characterized in that The first electrode of the second semiconductor element (Q2) is coupled to the control electrode of the first semiconductor element (Q3) via a first diode (D8) and / or a resistor.

14. The leakage protection device according to claim 11, It is characterized in that The control electrode of the third semiconductor element (Q1) receives the leakage fault signal and the self-test fault signal via the first filter circuit (R10, C11), The control electrode of the fourth semiconductor element (Q4) receives the leakage fault signal and the self-test fault signal via the second filter circuit (R20, C12), Wherein, the time characteristic of the first filter circuit is greater than the time characteristic of the second filter circuit.

15. The leakage protection device according to claim 11, It is characterized in that The leakage detection module comprises a leakage detection coil (CT1) and a first processor (U1), wherein the first processor (U1) generates the leakage fault signal based on the leakage current signal detected by the leakage detection coil (CT1); The self-test module comprises a second processor (U2) for periodically generating the simulated leakage current signal, and when the leakage current detection module fails, the second processor (U2) generates the self-test fault signal.

16. The leakage protection device according to claim 15, It is characterized in that The first processor (U1) and the second processor (U2) are packaged in the same processor.

17. The leakage protection device according to claim 12, It is characterized in that Any one of the first to fourth semiconductor elements is selected from the following: Thyristors, bipolar transistors, field effect transistors, optocouplers and relays.

18. An electrical connection device, It is characterized in that include: case; The leakage protection device according to any one of claims 1 to 17, which is accommodated in the housing.

19. An electrical appliance, It is characterized in that include: Load electrical appliances; An electrical connection device is coupled between a main line and the load electrical device to supply power to the load electrical device, wherein the electrical connection device comprises a leakage protection device as claimed in any one of claims 1 to 17.

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