Substrate processing apparatus

Abstract

A substrate processing apparatus includes a processing chamber that houses a substrate, a rotation holding portion that holds and rotates the substrate, a processing liquid supply portion that supplies a processing liquid to a surface of the substrate held by the rotation holding portion, an exhaust portion that exhausts a gas in the processing chamber from an exhaust port provided at a position further outward than an outer periphery of the substrate held by the rotation holding portion, a plate that is disposed in the processing chamber so as to face a surface at a part in a circumferential direction of the substrate held by the rotation holding portion and not to face the surface at another part in the circumferential direction of the substrate, and a plate disposing portion that is capable of switching between a first state in which the plate faces the surface at the part and a second state in which the plate is located at a position further away from the surface than in the first state. According to the present invention, in liquid processing that requires the plate and liquid processing that does not require the plate, it is possible to reduce the influence on the result of the liquid processing when the plate is not used.

Description

TECHNICAL FIELD

[0001] The present application relates to a substrate processing apparatus. BACKGROUND

[0002] Patent Literature 1 discloses a coating film forming apparatus (substrate processing apparatus) including a rotation mechanism that rotates a substrate held by a substrate holding portion, a coating liquid supply mechanism that supplies a coating liquid to a central portion of the substrate, a ring-shaped member that is provided annularly in a circumferential direction of the substrate so as to cover an upper portion of a peripheral portion of the substrate, a lift mechanism that lifts and lowers the ring-shaped member, and a control portion. The control portion of the substrate processing apparatus outputs a control signal to execute a step of rotating the substrate while the ring-shaped member is in a processing position that rectifies an air flow, and a step of avoiding the ring-shaped member to an avoiding position.

[0003] PRIOR ART DOCUMENTS

[0004] PATENT LITERATURE

[0005] Patent Literature 1: Japanese Patent Application Publication No. 2015-109306 SUMMARY

[0006] PROBLEMS TO BE SOLVED BY THE INVENTION

[0007] The substrate processing apparatus has a case where liquid processing with a plate like the ring-shaped member described in Patent Literature 1 and liquid processing without the plate are performed when processing with a processing liquid is performed. The present application can reduce the influence on a result of liquid processing when the plate is not used in the apparatus that performs the liquid processing with the plate and the liquid processing without the plate.

[0008] MEANS OF SOLVING THE PROBLEM

[0009] A substrate processing apparatus according to one aspect of the present application includes a processing chamber that accommodates a substrate, a rotation holding portion that can hold and rotate the substrate in the processing chamber, a processing liquid supply portion that supplies a processing liquid to a surface of the substrate held by the rotation holding portion, an exhaust portion that exhausts a gas in the processing chamber from an exhaust port provided at a position that is outside a periphery of the substrate held by the rotation holding portion, a plate that is disposed in the processing chamber so as to be opposed to a surface at a part in a circumferential direction of the substrate held by the rotation holding portion and not to be opposed to the surface at another part in the circumferential direction of the substrate, and a plate disposing portion that can switch between a first state where the plate is opposed to the surface at the part and a second state where the plate is located at a position that is away from the surface than in the first state.

[0010] EFFECT OF THE INVENTION

[0011] According to the present application, in an apparatus that performs liquid processing requiring a board and liquid processing not requiring a board, it is possible to reduce the influence of the board when not in use on the results of liquid processing. BRIEF DESCRIPTION OF DRAWINGS

[0012] Figure 1 is a schematic diagram illustrating the outline structure of a substrate processing system.

[0013] Figure 2 is a schematic diagram illustrating the internal structure of a coating developing apparatus.

[0014] Figure 3 is a schematic diagram illustrating the structure of a liquid processing unit.

[0015] Figure 4 is a schematic plan view illustrating the state in which the board opposes the wafer.

[0016] Figure 5 is a schematic side view illustrating the displacement of the board.

[0017] Figure 6 is a schematic plan view showing another example of the board.

[0018] Figure 7 is a schematic plan view showing another example of the board.

[0019] Figure 8 is a block diagram showing one example of the hardware structure of the control apparatus.

[0020] Figure 9 is a flowchart showing one example of the liquid processing flow.

[0021] Figure 10 is a flowchart showing one example of the liquid processing requiring a board.

[0022] Figure 11 is a graph showing one example of the rotation speed control of the wafer W.

[0023] Figure 12 is a flowchart showing one example of the liquid processing not requiring a board.

[0024] Figure 13 is a graph showing the drying time corresponding to the relative range from the circumferential direction.

[0025] Fig. 14 (a) and Fig. 14 (b) are graphs showing the influence of the board in the second state, respectively.

[0026] Figure 15 is a schematic plan view illustrating the board of the second embodiment.

[0027] Figure 16 is a schematic side view illustrating the displacement of the board.

[0028] Figure 17 is a schematic side view showing another example of the displacement of the board.

[0029] BRIEF DESCRIPTION OF DRAWINGS

[0030] 2 … … coating and developing device, 20 … … rotation holding portion, 30 … … processing liquid supply portion, 60 … … exhaust portion, 62 … … exhaust port, 70, 70A, 70B, 70C … … board, 80 … … board arrangement portion, S … … processing chamber, W … … wafer, Wa … … surface. DETAILED DESCRIPTION

[0031] Hereinafter, an embodiment will be described with reference to the drawings. In the description, the same reference numerals are assigned to the same elements or elements having the same function, and repeated description is omitted.

[0032] [Substrate processing system]

[0033] First, the outline structure of the substrate processing system will be described with reference to Figure 1 and Figure 2 . The substrate processing system 1 is a system that performs formation of a photosensitive coating film, exposure of the photosensitive coating film, and development of the photosensitive coating film on a substrate. The substrate as a processing target is, for example, a wafer W of a semiconductor. The substrate as a processing target can include two or more wafers W, and the two or more wafers W can include a wafer W on the surface of which a step difference is formed (a step difference substrate). The photosensitive coating film is, for example, a resist film. The substrate processing system 1 includes a coating and developing device 2 and an exposure device 3. The exposure device 3 performs exposure processing of a resist film (photosensitive coating film) formed on a wafer W (substrate). Specifically, the exposure device 3 irradiates an energy ray to an exposure target portion of the resist film by a method such as liquid immersion exposure. The coating and developing device 2 performs processing of forming a resist film on the surface of the wafer W (substrate) before the exposure processing by the exposure device 3, and performs development processing of the resist film after the exposure processing.

[0034] [First embodiment]

[0035] Hereinafter, the structure of the coating and developing device 2 will be described as an example of the substrate processing device of the first embodiment. As shown in Figure 1 and Figure 2 , the coating and developing device 2 includes a carrier block 4, a processing block 5, an interface block 6, and a control device 100.

[0036] The carrier block 4 performs an operation of introducing the wafer W into the coating and developing device 2 and an operation of leading the wafer W out of the coating and developing device 2. The carrier block 4, for example, supports a plurality of carriers C for the wafer W, and has a transport device Al including a transfer arm built therein. The carrier C accommodates a plurality of wafers W in a circular shape, for example. The transport device Al takes out the wafer W from the carrier C and delivers it to the processing block 5, and receives the wafer W from the processing block 5 and sends it back into the carrier C.

[0037] The processing block 5 has a plurality of processing modules 11, 12, 13, 14. The processing modules 11, 12, 13, 14 have a liquid processing unit Ul, a heat processing unit U2, and a transport device A3 including a transport arm for transporting the wafer W to the above units built therein. The liquid processing unit Ul performs liquid processing by supplying a processing liquid to the surface of the wafer W. The heat processing unit U2 has, for example, a hot plate and a cooling plate built therein, and can heat the wafer W with the hot plate and cool the heated wafer W with the cooling plate to perform heat processing.

[0038] The processing module 11 forms a lower layer film on the surface of the wafer W using the liquid processing unit Ul and the heat processing unit U2. The liquid processing unit Ul of the processing module 11 applies a processing liquid for forming the lower layer film to the wafer W. The heat processing unit U2 of the processing module 11 performs various heat processing accompanying the formation of the lower layer film.

[0039] The processing module 12 forms a resist film on the lower layer film using the liquid processing unit Ul and the heat processing unit U2. The liquid processing unit Ul of the processing module 12 supplies a processing liquid for forming the resist film to the lower layer film, and rotates the wafer W to dry the liquid film of the processing liquid. The heat processing unit U2 of the processing module 12 performs various heat processing accompanying the formation of the resist film. As a specific example of the heat processing, a heating treatment (PAB: Pre Applied Bake) for curing the applied film to form the resist film can be cited.

[0040] The processing module 13 forms an upper layer film on the resist film using the liquid processing unit Ul and the heat processing unit U2. The liquid processing unit Ul of the processing module 13 applies a liquid for forming the upper layer film to the resist film. The heat processing unit U2 of the processing module 13 performs various heat processing accompanying the formation of the upper layer film.

[0041] The processing module 14 performs a development treatment of the exposed resist film using the liquid processing unit U1 and the heat processing unit U2. The liquid processing unit U1 of the processing module 14 performs a development treatment of the resist film by applying a developing liquid to the surface of the exposed wafer W and then rinsing it with a rinsing liquid. The heat processing unit U2 performs various heat treatments in conjunction with the development treatment. As specific examples of the heat treatment, a pre-development heat treatment (PEB: Post Exposure Bake) and a post-development heat treatment (PB: Post Bake) can be given.

[0042] A shelf unit U10 is provided on the side of the carrier block 4 in the processing block 5. The shelf unit U10 is divided into a plurality of cells arranged in the up-down direction. A transport device A7 including a lifting arm is provided in the vicinity of the shelf unit U10. The transport device A7 lifts the wafer W between the cells of the shelf unit U10.

[0043] A shelf unit U11 is provided on the side of the interface block 6 in the processing block 5. The shelf unit U11 is divided into a plurality of cells arranged in the up-down direction.

[0044] The interface block 6 performs an exchange of the wafer W with the exposure device 3. For example, the interface block 6 is provided with a transport device A8 including an exchange arm, which is connected to the exposure device 3. The transport device A8 delivers the wafer W disposed in the shelf unit U11 to the exposure device 3, receives the wafer W from the exposure device 3, and returns it to the shelf unit U11.

[0045] [Coating and development process flow]

[0046] The control device 100 controls the coating and development device 2, for example, to perform the coating and development treatment in the following flow. First, the control device 100 controls the transport device Al to transport the wafer W in the carrier C to the shelf unit U10 and controls the transport device A7 to dispose the wafer W in the cell for the processing module 11.

[0047] Next, the control device 100 controls the transport device A3 to transport the wafer W of the shelf unit U10 to the liquid processing unit U1 and the heat processing unit U2 in the processing module 11. In addition, the control device 100 controls the liquid processing unit U1 and the heat processing unit U2 to form a lower layer film on the surface of the wafer W. Thereafter, the control device 100 controls the transport device A3 to return the wafer W on which the lower layer film is formed to the shelf unit U10 and controls the transport device A7 to dispose the wafer W in the cell for the processing module 12.

[0048] Next, the control device 100 controls the conveyance device A3 to convey the wafer W of the shelf unit U10 to the liquid processing unit U1 and the heat processing unit U2 in the processing module 12. Further, the control device 100 controls the liquid processing unit U1 and the heat processing unit U2 to form a resist film on the surface of the wafer W. As a specific example of the liquid processing (hereinafter, referred to as "liquid processing flow") for forming the resist film, the following will be described. Thereafter, the control device 100 controls the conveyance device A3 to return the wafer W to the shelf unit U10, and controls the conveyance device A7 to arrange the wafer W in the cell for the processing module 13.

[0049] Next, the control device 100 controls the conveyance device A3 to convey the wafer W of the shelf unit U10 to each unit in the processing module 13. Further, the control device 100 controls the liquid processing unit U1 and the heat processing unit U2 to form an upper layer film on the resist film of the wafer W. Thereafter, the control device 100 controls the conveyance device A3 to return the wafer W to the shelf unit U11.

[0050] Next, the control device 100 controls the conveyance device A8 to deliver the wafer W of the shelf unit U11 to the exposure device 3. Thereafter, the control device 100 controls the conveyance device A8 to collect the wafer W on which the exposure process has been performed from the exposure device 3, and to arrange it in the cell for the processing module 14 in the shelf unit U11.

[0051] Next, the control device 100 controls the conveyance device A3 to convey the wafer W of the shelf unit U11 to each unit in the processing module 14, and controls the liquid processing unit U1 and the heat processing unit U2 to perform a developing process on the resist film of the wafer W. Thereafter, the control device 100 controls the conveyance device A3 to return the wafer W to the shelf unit U10, and controls the conveyance device A7 and the conveyance device Al to return the wafer W to the carrier C. As described above, the coating and developing process is completed.

[0052] Further, the specific structure of the substrate processing apparatus is not limited to the structure of the coating and developing apparatus 2 exemplified above. The substrate processing apparatus can be any apparatus as long as it has a liquid processing unit that supplies a processing liquid to a substrate to perform a liquid processing, and a control device 100 that controls the unit.

[0053] [LIQUID PROCESSING UNIT]

[0054] Hereinafter, with reference to Figure 3 One example of the liquid processing unit U1 will be described in detail. Here, the liquid processing unit U1 in the processing module 12 for forming a resist film will be described as an example. The liquid processing unit U1 of the processing module 12 performs a plurality of liquid processes in which at least one of the kind of processing liquid and the kind of wafer W as a processing target is different from each other. The plurality of liquid processes include a first liquid process that requires a board and a second liquid process that does not require a board.

[0055] In the first liquid processing, the liquid processing unit U1 uses a first processing liquid (hereinafter referred to as "processing liquid L1") to form a resist film on the surface Wa of the first wafer W (hereinafter referred to as "wafer W1"). In the second liquid processing, the liquid processing unit U1 uses a second processing liquid (hereinafter referred to as "processing liquid L2") to form a resist film on the surface Wa of the second wafer W (hereinafter referred to as "wafer W2").

[0056] Processing solution L1 is a resist solution with medium to high viscosity. The viscosity of processing solution L1 can be, for example, 50 cP to 1000 cP, 100 cP to 600 cP, or 200 cP to 500 cP. Furthermore, the viscosity of processing solution L1 can also be 100 cP to 300 cP, or 300 cP to 600 cP. Processing solution L2 is a resist solution with a lower viscosity than processing solution L1. As an example, the viscosity of processing solution L2 is in the range of a few cP to tens of cP. Wafer W1 has a height difference on its surface Wa. As a specific example of a height difference formed on surface Wa, a height difference in a pre-formed embossed pattern can be cited. Wafer W2 may or may not have a height difference on its surface Wa.

[0057] like Figure 3 As shown, the liquid treatment unit U1 includes a rotating holding part 20, a liquid supply part 30, a cup-shaped body 40, an exhaust part 60, a plate 70, and a plate placement part 80.

[0058] The rotation holding part 20 is capable of holding and rotating the wafer W. The rotation holding part 20 includes, for example, a holding part 22, a shaft part 24, and a rotation drive part 26. The holding part 22 supports the center portion of the wafer W, which is horizontally arranged with its surface Wa facing upwards, and holds the wafer W by adsorption (e.g., vacuum adsorption). The rotation drive part 26 is connected to the holding part 22 via the vertically extending shaft part 24, and uses, for example, an electric motor as a power source to rotate the holding part 22 about a vertical axis. The wafer W is thus rotated. The holding part 22 can also hold the wafer W such that the center CP of the wafer W is substantially aligned with the aforementioned axis. In this case, the wafer W rotates about the center CP. The rotation holding part 20 has the function of rotating the wafer W, to which a processing liquid has been supplied to the surface Wa, to dry the liquid film of the processing liquid (forming a coating film).

[0059] The processing liquid supply section 30 supplies either the first processing liquid Ll or the second processing liquid L2 to the surface Wa of the wafer W held by the rotation holding section 20. The processing liquid supply section 30 has nozzles 32A, 32B, supply sources 34A, 34B, and nozzle moving sections 36A, 36B. The nozzles 32A, 32B discharge the processing liquids Ll, L2, respectively, to the surface Wa of the wafer W. For example, the nozzles 32A, 32B are disposed above the wafer W and discharge the processing liquids Ll, L2, respectively, downward. The supply sources 34A, 34B supply the processing liquids Ll, L2, respectively, to the nozzles 32A, 32B by pumps or the like (not shown). The nozzle moving sections 36A, 36B move the nozzles 32A, 32B, respectively, between discharge positions above the wafer W and waiting positions spaced apart from the discharge positions by a certain interval, using a motor or the like as a power source.

[0060] The cup-shaped body 40 accommodates the wafer W held by the rotation holding section 20. The cup-shaped body 40 has, for example, a bottom wall 42, an outer wall 44, an inner wall 46, a guide section 48, and a cover member 52. The bottom wall 42 is formed in a circular ring shape so as to surround the rotation holding section 20. A portion of the bottom wall 42 opposes the back surface Wb of the wafer W held by the holding section 22. The bottom wall 42 includes a drain port 42a of a drain pipe 42b that drains the processing liquids Ll, L2 out of the cup-shaped body 40.

[0061] The outer wall 44 protrudes upward from the outer edge of the bottom wall 42 and is formed in a cylindrical shape. The outer wall 44 is located outward of the peripheral edge Wc of the wafer W held by the holding section 22. The upper end of the outer wall 44 is located upward of the surface Wa of the wafer W held by the holding section 22. The upper end portion of the outer wall 44 is open and constitutes a suction port 44a that sucks air into the space inside the cup-shaped body 40. The upper side portion of the outer wall 44 (for example, a portion located upward of the surface Wa of the wafer W) can also be inclined inward with a gradual reduction in diameter as it goes upward.

[0062] The inner wall 46 protrudes upward from the inner edge of the bottom wall 42 and is formed in a cylindrical shape. The inner wall 46 is located inward of the peripheral edge Wc of the wafer W held by the holding section 22. The upper end of the inner wall 46 is located downward of the wafer W held by the holding section 22.

[0063] The guide section 48 is a circular ring-shaped portion that expands from the upper end of the inner wall 46 toward the outer wall 44. The outer edge of the guide section 48 is located outward of the peripheral edge Wc of the wafer W held by the holding section 22 and inward of the outer wall 44. The guide section 48 has an umbrella-shaped upper surface. For example, the height of the portion of the upper surface of the guide section 48 located outward of the peripheral edge Wc gradually decreases as it approaches the outer wall 44. Thus, in the cup-shaped body 40, the processing liquids Ll, L2 that have fallen from the wafer W are guided by the guide section 48 to the drain port 42a of the bottom wall 42 and are drained out of the cup-shaped body 40 via the drain pipe 42b from the drain port 42a.

[0064] The lid member 52 closes the upper portion of the space surrounded by the inner wall 46. The rotation driving portion 26 of the rotation holding portion 20 is located below the lid member 52, the holding portion 22 is located above the lid member 52, and the shaft portion 24 penetrates the lid member 52.

[0065] The exhaust portion 60 exhausts the gas in the cup-shaped body 40. The exhaust portion 60 has an exhaust pipe 64 provided so as to penetrate the bottom wall 42. One end of the exhaust pipe 64 is open in the space in the cup-shaped body 40. The other end of the exhaust pipe 64 is connected to an exhaust pump (not shown). Thus, the gas in the cup-shaped body 40 is exhausted via the exhaust pipe 64. Here, the portion of the space in the cup-shaped body 40 above the lid member 52 and the guide portion 48 is taken as a processing chamber S. The wafer W is held in the processing chamber S by the holding portion 22 of the rotation holding portion 20.

[0066] The gas in the processing chamber S flows from the processing chamber S to the lower portion of the cup-shaped body 40 via the outer wall 44 and the outer periphery of the guide portion 48, is guided to the outside of the cup-shaped body 40 via the exhaust pipe 64, and thus the space between the guide portion 48 and the outer wall 44 becomes an exhaust port of the processing chamber S. The exhaust port of the processing chamber S (hereinafter, referred to as "exhaust port 62") is provided at a position outside the outer periphery of the surface Wa of the wafer W held by the rotation holding portion 20. The exhaust port 62 is constituted by one annular gap that surrounds the periphery Wc of the wafer W held by the holding portion 22. When the processing chamber S is exhausted by the exhaust portion 60, the gas flows into the processing chamber S from the outside of the cup-shaped body 40 (suction port 44a). Thus, in the processing chamber S (above the surface Wa of the wafer W), a flow (gas flow) of the gas from the suction port 44a to the exhaust port 62 is generated.

[0067] The plate 70 is used to adjust the flow of the gas in the processing chamber S in the first liquid processing. For example, the plate 70 is used to adjust the flow rate of the gas on the surface Wa (flow rate of the gas from the center of the wafer W to the exhaust port 62 along the surface Wa). The plate 70 is arranged in the processing chamber S in a state of being spaced apart from the surface Wa of the wafer W1 held by the rotation holding portion 20 by a predetermined interval (hereinafter, referred to as "first interval") at least for a part of the period during which the first liquid processing is performed. Hereinafter, this state is referred to as "first state".

[0068] In the first state, the plate 70 is disposed in the processing chamber S in such a manner that a portion of the circumference of the wafer W1 held by the rotary holder 20 opposes the surface Wa, and the other portion of the circumference of the wafer W1 does not oppose the surface Wa. In the present specification, "opposes the surface Wa" means a case where the surface Wa is overlapped as viewed in a direction perpendicular to the surface Wa (for example, a vertical direction). Thus, a flow path of the gas is formed between the plate 70 and the surface Wa, and the flow rate of the gas on the surface Wa increases compared to a case where the plate 70 is not present. Thus, drying of the liquid film of the processing liquid L1 formed on the surface Wa of the wafer W can be promoted. As one example, the first interval is 0.5 mm to 5 mm. The first interval can be 1 mm to 4 mm, or 2 mm to 3 mm.

[0069] Figure 4 is a plan view of the plate 70 and the wafer W as viewed from above in the first state. As shown in Figure 4 the plate 70 is formed in a substantially semicircular shape as viewed from above. The area of the plate 70 is smaller than the area of the wafer W as viewed from above. The plate 70 has an outer shape that is line-symmetrical with respect to a line that bisects the area of the plate 70 through the center of the wafer W. The plate 70 can include an outer periphery 72, an inner periphery 74, a side edge 76, and a side edge 78.

[0070] In the first state, the center of the outer periphery 72 substantially coincides with the center CP of the wafer W. The outer periphery 72 is a circular arc having a radius larger than the radius of the wafer W, and the inner periphery 74 is a circular arc located inward of the outer periphery 72. The side edge 76 connects one end 72a of the outer periphery 72 and one end 74a of the inner periphery 74. The side edge 78 connects the other end 72b of the outer periphery 72 and the other end 74b of the inner periphery 74. The side edge 76 connects the one end 72a and the one end 74a at the shortest distance, and the side edge 78 connects the other end 72b and the other end 74b at the shortest distance.

[0071] The radius of curvature of the outer periphery 72 and the radius of curvature of the inner periphery 74 can be different from each other. For example, the radius of curvature of the inner periphery 74 is smaller than the radius of curvature of the outer periphery 72. The center of the outer periphery 72 and the center of the inner periphery 74 can be the same position or different positions. For example, the distance from the outer periphery 72 to the center of the inner periphery 74 is larger than the radius of the outer periphery 72. In Figure 4In the first state, a portion of the plate 70 in the circumferential direction of the wafer W that opposes the surface Wa is indicated by "portion Ca", and the other portion of the plate 70 in the circumferential direction of the wafer W that does not oppose the surface Wa is indicated by "portion Cb". In the portion Ca, the plate 70 opposes the surface Wa in at least a portion of the radial direction of the wafer W. In the portion Cb, the plate 70 does not oppose the surface Wa in all of the radial direction of the wafer W. In the plate 70, the intersection of the side edge 76 and the outer periphery of the wafer W and the intersection of the side edge 78 and the outer periphery of the wafer W become both ends of the portion Ca in the circumferential direction of the wafer W.

[0072] The range of the portion Ca (hereinafter, referred to as "range of the portion Ca") with respect to the surface Wa of the wafer W is determined in consideration of the promotion of drying of the liquid film of the processing liquid Ll in the first state. As one example, the range of the portion Ca in the circumferential direction of the wafer W becomes 40% (144° around the center of the wafer W) or more. Further, the range of the portion Ca is also determined in consideration of the easiness of avoidance (easiness of performing avoidance) of the plate 70. As one example, the range of the portion Ca in the circumferential direction of the wafer W becomes 60% (216° around the center of the wafer W) or less. That is, the plate 70 opposes the surface Wa of the wafer W in a portion of 40% to 60% in the circumferential direction of the wafer W in the first state.

[0073] From the viewpoint of further promotion of drying, the range of the portion Ca in the circumferential direction of the wafer W can be 45% or more, or 50% or more. Further, from the same viewpoint, the area of the portion Ca with respect to the area of the surface Wa of the wafer W can be 40% or more, or 45% or more, or 50% or more.

[0074] From the viewpoint of further easiness of avoidance of the plate 70, the range of the portion Ca in the circumferential direction of the wafer W can be 55% or less, or 50% or less. Further, from the same viewpoint, the area of the portion Ca with respect to the area of the surface Wa of the wafer W can be 60% or less, or 55% or less, or 50% or less.

[0075] The plate arrangement portion 80 switches the above-described first state and a state in which the plate 70 is positioned at a position further away from the wafer W than in the first state (hereinafter, referred to as "second state"). Arranging the plate 70 in the second state is one example of causing the plate 70 to avoid. For example, the plate arrangement portion 80 arranges the plate 70 in the first state at least in a portion of the period in which the first liquid processing is performed, and arranges the plate 70 in the second state in the period in which the second liquid processing is performed.

[0076] In the first state, a portion of the plate 70 in the circumferential direction of the wafer W that opposes the surface Wa is indicated by "portion Ca", and the other portion of the plate 70 in the circumferential direction of the wafer W that does not oppose the surface Wa is indicated by "portion Cb". In the portion Ca, the plate 70 opposes the surface Wa in at least a portion of the radial direction of the wafer W. In the portion Cb, the plate 70 does not oppose the surface Wa in all of the radial direction of the wafer W. In the plate 70, the intersection of the side edge 76 and the outer periphery of the wafer W and the intersection of the side edge 78 and the outer periphery of the wafer W become both ends of the portion Ca in the circumferential direction of the wafer W. Figure 5 In the first state, a portion of the plate 70 in the circumferential direction of the wafer W that opposes the surface Wa is indicated by "portion Ca", and the other portion of the plate 70 in the circumferential direction of the wafer W that does not oppose the surface Wa is indicated by "portion Cb". In the portion Ca, the plate 70 opposes the surface Wa in at least a portion of the radial direction of the wafer W. In the portion Cb, the plate 70 does not oppose the surface Wa in all of the radial direction of the wafer W. In the plate 70, the intersection of the side edge 76 and the outer periphery of the wafer W and the intersection of the side edge 78 and the outer periphery of the wafer W become both ends of the portion Ca in the circumferential direction of the wafer W. Figure 5As exemplified, the plate arrangement section 80 displaces the plate 70 in a direction perpendicular to the surface Wa of the wafer W held by the holding section 22 (hereinafter, referred to as "vertical direction Dl"), thereby switching between the first state and the second state. As one example, the plate arrangement section 80 moves the plate 70 in parallel in the vertical direction Dl, thereby switching the arrangement state of the plate 70. Figure 5 As exemplified, the plate arrangement section 80 displaces the plate 70 in a direction perpendicular to the surface Wa of the wafer W held by the holding section 22 (hereinafter, referred to as "vertical direction Dl"), thereby switching between the first state and the second state. As one example, the plate arrangement section 80 moves the plate 70 in parallel in the vertical direction Dl, thereby switching the arrangement state of the plate 70.

[0077] The second interval between the plate 70 and the surface Wa in the second state (hereinafter, referred to as "second interval") is larger than the above-described first interval. The second interval is set to a level at which the influence of the plate 70 on the result of the liquid processing in the second liquid processing can be ignored. The second interval can be, for example, 50 mm to 180 mm, 70 mm to 160 mm, or 80 mm to 150 mm. Further, the second interval can be 70 mm to 120 mm, or 130 mm to 150 mm. In the case where the plate arrangement section 80 displaces the plate 70 in the vertical direction Dl to switch between the first state and the second state, the area of the plate 70 opposite to the surface Wa is substantially the same in the first state and the second state.

[0078] The plate arrangement section 80 has, for example, a holding section 82 for holding the plate 70 at a prescribed position, and a displacement drive section 84 for displacing the holding section 82. One end of the holding section 82 is connected to the upper surface of the plate 70. The displacement drive section 84 uses, for example, an electric motor as a power source to move the holding section 82 in the vertical direction Dl.

[0079] Returning to Figure 3 , the exhaust port 62 of the exhaust section 60 is provided so as to surround the entire periphery Wc of the wafer W held by the holding section 22, as described above. Therefore, the exhaust port 62 is provided at a position corresponding to a portion (portion Ca) of the plate 70 opposite to the surface Wa in the first state, and a position corresponding to a portion (portion Cb) of the plate 70 not opposite to the wafer W in the first state. Further, the exhaust port 62 can be provided at a position corresponding to the portion Ca, and not provided at a position corresponding to the portion Cb.

[0080] The exhaust port 62 can also be configured such that the exhaust flow rate at the position corresponding to the portion Ca and the exhaust flow rate at the position corresponding to the portion Cb are different from each other. For example, the exhaust port 62 can be configured such that the exhaust flow rate at the portion Ca is larger than the exhaust flow rate at the portion Cb. Specifically, the opening width (the gap between the guide portion 48 and the outer wall 44) of the exhaust port 62 at the position corresponding to the portion Ca can be larger than the opening width of the exhaust port 62 at the position corresponding to the portion Cb. The exhaust port 62 can also be configured by a plurality of exhaust holes arranged in the circumferential direction of the wafer W instead of a continuous gap in the circumferential direction of the wafer W. In this case, the distribution range of the exhaust holes becomes the formation range of the exhaust port 62. Further, the exhaust flow rate of each portion of the exhaust port 62 can be adjusted according to the size of each exhaust hole.

[0081] The structure of the plate 70 and the plate arrangement portion 80 is not limited to the above-described example. The plate 70 can be of any structure as long as it can be arranged in the processing chamber S in such a manner that a portion of the wafer Wl held by the rotary holding portion 20 opposes the surface Wa in the circumferential direction of the wafer Wl and the other portion of the wafer Wl does not oppose the surface Wa. For example, Figure 6 The plate 70A shown has a different outer shape from the plate 70. The plate 70A has an outer shape that is asymmetric with respect to a line that bisects the area of the plate 70A through the center of the wafer W. In the plate 70A, one end 74a of the inner periphery 74 and the intersection of the side edges 76, 78 with the outer periphery of the wafer W become both ends of the portion Ca in the circumferential direction of the wafer W.

[0082] Figure 7 The plate 70B shown also has a different outer shape from the plate 70. The plate 70B does not include the inner periphery 74 and is formed in a fan shape. That is, in the plate 70B, the side edges 76, 78 intersect at the center of the wafer W. In the plate 70B, the side edges 76, 78 become both ends of the portion Ca in the circumferential direction of the wafer W. In the case where the angle formed by the side edges 76, 78 is 180°, the shape of the plate 70B becomes a semicircle.

[0083] The plate arrangement portion 80 can also be configured to displace the plates 70, 70A, 70B in the direction along the surface Wa of the wafer W held by the holding portion 22 in addition to the vertical direction Dl. Specifically, the plate arrangement portion 80 can displace the plates 70, 70A, 70B in the direction along the surface Wa so that the area of the plates 70, 70A, 70B opposing the surface Wa in the second state (hereinafter referred to as "the opposing area in the second state") is smaller than the area of the plates 70, 70A, 70B opposing the surface Wa in the first state (hereinafter referred to as "the opposing area in the first state").

[0084] For example, the plate arrangement section 80 can displace the plates 70, 70A, 70B such that the relative area in the second state is reduced by 10% to 50% compared to the relative area in the first state. The plate arrangement section 80 can also displace the plates 70, 70A, 70B such that the relative area in the second state is reduced by 15% to 45% compared to the relative area in the first state, and can also displace the plates 70, 70A, 70B such that the relative area in the second state is reduced by 20% to 40% compared to the relative area in the first state.

[0085] The plate arrangement section 80 can also displace the plates 70, 70A, 70B such that the relative area in the second state is reduced by 100% compared to the relative area in the first state. That is, the plate arrangement section 80 can displace the plates 70, 70A, 70B to a position in which the plates 70, 70A, 70B do not oppose the surface Wa in the second state. That is, the case in which the relative area in the second state is made smaller than the relative area in the first state also includes the case in which the relative area in the second state is zero.

[0086] The plate arrangement section 80 can displace the plates 70, 70A, 70B along the surface Wa in either of before and after the displacement of the plates 70, 70A, 70B in the vertical direction D1, or can repeat at least a part of the displacement of the plates 70, 70A, 70B in the direction along the surface Wa during the displacement of the plates 70, 70A, 70B in the vertical direction D1.

[0087] The plate arrangement section 80 can also be configured to move the plates 70, 70A, 70B in parallel in one direction along the surface Wa. Further, the plate arrangement section 80 can also be configured to rotate the plates 70, 70A, 70B about an axis Ax1 that passes through a position different from the center CP and is perpendicular to the surface Wa. Figure 6 A case in which the plate 70A is rotated about the axis Ax1 set at the other end 72b of the outer periphery 72 is exemplified. Figure 7 A case in which the plate 70B is moved in parallel in one direction along the surface Wa is exemplified.

[0088] The plate arrangement section 80 can also incline the plates 70, 70A, 70B with respect to the surface Wa such that the plates 70, 70A, 70B are more apart from the surface Wa in the second state than in the first state, instead of or in addition to the displacement of the plates 70, 70A, 70B in the vertical direction D1. Specifically, the plate arrangement section 80 can also rotate the plates 70, 70A, 70B about an axis that is substantially parallel to the surface Wa of the wafer W held by the rotation holding section 20 (the holding section 22), thereby inclining the plates 70, 70A, 70B with respect to the surface Wa (also refer to FIG. 2). Figure 16). The above axis is set, for example, to sandwich the plate 70, 70A, 70B (the outer side of the plate 70 in the first state) between it and the center CP. In the case of rotating the plate 70, 70A, 70B like this, the shortest distance of the plate 70, 70A, 70B from the surface Wa becomes larger in the second state than in the first state. Further, the plate arrangement section 80 can move the plate 70, 70A, 70B in parallel in one direction along the surface Wa in addition to the above rotation of the plate 70, 70A, 70B, or can rotate the plate 70, 70A, 70B around an axis Ax1 perpendicular to the surface Wa.

[0089] In order to move the plate 70, 70A, 70B in the vertical direction D1 and in the direction along the surface Wa, the displacement drive section 84 can also include two actuators. The displacement drive section 84 can also include one actuator that moves the holding section 82 in a direction inclined with respect to the vertical direction D1. The displacement drive section 84 can also include a guide that guides the holding section 82 to displace in the vertical direction D1 and in the direction along the surface Wa, and one actuator that moves the holding section 82 along the guide.

[0090] [Control device]

[0091] The control device 100 controls each element included in the coating and developing device 2. The control device 100 is configured to be able to perform: a process of supplying the processing liquid L1, L2 to the surface Wa with the processing liquid supply section 30 so as to form a liquid film of the processing liquid L1, L2 on the surface Wa; and a process of switching the arrangement of the plate 70 to the first state or the second state in at least a part of the period during which the wafer W on which the above liquid film is formed is rotated, with the plate arrangement section 80, based on at least the kind of processing liquid.

[0092] For example, the control device 100 has, as a functional structure (hereinafter referred to as a "functional module"), a storage section 108, a liquid supply control section 102, a drying control section 104, and a plate arrangement control section 106, as shown in FIG. 1. Figure 3 The storage section 108 stores a plurality of liquid processing conditions each representing a condition of a plurality of liquid processes. The plurality of liquid processing conditions each include the kind of wafer W that is a processing target, the kind of processing liquid used, the processing liquid supply condition, and the drying condition of the processing liquid, and the like.

[0093] The liquid supply control section 102 rotates the wafer W with the rotation holding section 20 and supplies either of the treatment liquids Ll, L2 to the surface Wa of the wafer W with the treatment liquid supply section 30 to form a liquid film of the treatment liquid Ll, L2 on the wafer W. For example, in the first liquid treatment, the liquid supply control section 102 supplies the treatment liquid Ll to the surface Wa of the wafer Wl with the treatment liquid supply section 30 in accordance with the liquid treatment conditions for the first liquid treatment (hereinafter, referred to as "first liquid treatment conditions") stored in the storage section 108. For example, the liquid supply control section 102 configures the nozzle 32A at the release position with the nozzle moving section 36A to rotate the wafer Wl with the rotation holding section 20 at a rotation speed in accordance with the first liquid treatment conditions. Further, the liquid supply control section 102 releases the treatment liquid Ll from the nozzle 32A with the supply source 34A in accordance with a release amount and a release time in accordance with the first liquid treatment conditions.

[0094] In the second liquid treatment, the liquid supply control section 102 supplies the treatment liquid L2 to the surface Wa of the wafer W2 with the treatment liquid supply section 30 in accordance with the liquid treatment conditions for the second liquid treatment (hereinafter, referred to as "second liquid treatment conditions") stored in the storage section 108. For example, the liquid supply control section 102 configures the nozzle 32B at the release position with the nozzle moving section 36B to rotate the wafer W2 with the rotation holding section 20 at a rotation speed in accordance with the second liquid treatment conditions. Further, the liquid supply control section 102 releases the treatment liquid L2 from the nozzle 32B with the supply source 34B in accordance with a release amount and a release time in accordance with the second liquid treatment conditions.

[0095] The drying control section 104 dries the liquid film of the treatment liquid Ll, L2 formed on the surface Wa of the wafer W with the rotation holding section 20. For example, in the first liquid treatment, the drying control section 104 rotates the wafer Wl with the rotation holding section 20 at a rotation speed and for a rotation time in accordance with the first liquid treatment conditions. In the second liquid treatment, the drying control section 104 rotates the wafer W2 with the rotation holding section 20 at a rotation speed and for a rotation time in accordance with the second liquid treatment conditions.

[0096] The plate configuration control section 106 switches the configuration of the plate 70 to the first state or the second state with the plate configuration section 80. Specifically, the plate configuration control section 106 switches the configuration of the plate 70 to the first state or the second state with the plate configuration section 80 at least during a part of the period in which the wafer W on which the liquid film of either of the treatment liquids is formed is rotated, based on at least the kind of the treatment liquid. Hereinafter, the period for which the first state and the second state are switched is simply referred to as "switching target period".

[0097] The switching process includes at least a portion of the period during which the wafer W, on which the liquid film of processing liquids L1 and L2 is formed, is rotated to dry the liquid film. For example, if the liquid film of processing liquid L1 is formed on the surface Wa of wafer W1, the board configuration control unit 106 controls the board configuration unit 80 to be in a first state during the switching process. As an example, if the liquid film of processing liquid L2 is formed on the surface Wa of wafer W2, the board configuration control unit 106 controls the board configuration unit 80 to be in a second state during the switching process. As an example, the board configuration control unit 106 determines whether a liquid film of either processing liquid L1 or L2 has been formed on the surface Wa based on whether the liquid supply control unit 102 and the drying control unit 104 are operating under either liquid processing condition.

[0098] In any case, during periods other than the switching target period, the board configuration control unit 106 controls the board configuration unit 80 to set the board 70 to a second configuration state. That is, when the board configuration control unit 106 has formed a liquid film of processing liquid L2 on the surface Wa of the wafer W2, it maintains the board 70 in the second configuration state. Furthermore, the board configuration control unit 106 can also switch the configuration of the board 70 during the switching target period based on both the type of processing liquid and the type of wafer W. As an example, when the board configuration control unit 106 has formed a liquid film of processing liquid L1 on the surface Wa with an uneven pattern, it controls the board configuration unit 80 to be in the first configuration state during the switching target period, and in other cases, it controls the board configuration unit 80 to be in the second configuration state during the switching target period.

[0099] The control device 100 comprises one or more control computers. For example, the control device 100 has... Figure 8 The circuit 120 shown has one or more processors 122, memory 124, storage 126, input / output ports 128, and timers 132.

[0100] Processor 122 has a computer-readable storage medium, such as a hard disk. The storage medium stores a program for causing control device 100 to execute a liquid processing procedure based on liquid processing unit U1. The storage medium can be a removable medium such as a non-volatile semiconductor memory, a hard disk, or a magneto-optical disk. Memory 124 temporarily stores the program loaded from the storage medium of memory 126 and the calculation results of processor 122. Processor 122 and memory 124 cooperate in executing the aforementioned program, thereby constituting the aforementioned functional modules. Timer 132 measures elapsed time by counting, for example, reference pulses of a certain period. Input / output port 128 inputs and outputs electrical signals between itself and the components controlled by the processor 122 according to instructions from the processor 122.

[0101] Further, the hardware structure of the control device 100 is not limited to a structure in which each functional module is constituted by a program. For example, each functional module of the control device 100 can be constituted by a dedicated logic circuit or an ASIC (Application Specific Integrated Circuit) in which they are integrated.

[0102] [liquid processing flow]

[0103] Figure 9 is a flowchart showing an example of the liquid processing flow. As shown in Figure 9 , the control device 100 first executes steps S01 and S02. In step S01, for example, the liquid supply control section 102 acquires the liquid processing conditions of the liquid processing to be executed from the storage section 108. In step S02, for example, the liquid supply control section 102 determines whether the kind of the processing liquid in the liquid processing conditions acquired in step S01 is the processing liquid L1.

[0104] The control device 100 executes the first liquid processing of step S03 in accordance with the first liquid processing conditions in the case where the kind of the processing liquid is the processing liquid L1 (for example, in the case where the liquid processing conditions are the above-described first liquid processing conditions). The control device 100 executes the second liquid processing of step S04 in accordance with the second liquid processing conditions in the case where the kind of the processing liquid is not the processing liquid L1 (for example, in the case where the liquid processing conditions are the above-described second liquid processing conditions). Specific examples of the flow of each of the first liquid processing and the second liquid processing will be described later.

[0105] Next, the control device 100 executes step S05. In step S05, for example, the control device 100 controls the conveyance device A3 to convey the wafer W on which the liquid film of the processing liquid is formed to the heat treatment unit U2. Then, the control device 100 performs heat treatment on the wafer W with the heat treatment unit U2 to form a resist film. With the above, the liquid processing flow ends.

[0106] (first liquid processing)

[0107] Figure 10 is a flowchart showing an example of the first liquid processing of step S03. As shown in Figure 10 , the control device 100 first executes step S31. In step S31, for example, the liquid supply control section 102 starts rotating the wafer W1 with the rotation holding section 20 in a state in which the plate 70 is arranged in the second state, and controls the nozzle moving section 36A to arrange the nozzle 32A to the release position.

[0108] Next, the control device 100 executes step S32. In step S32, for example, the liquid supply control section 102 starts supplying the processing liquid L1 to the wafer W1 with the nozzle 32A arranged to the release position, and controls the nozzle moving section 36A to arrange the nozzle 32A to the processing position. Figure 11The wafer W1 is rotated at a rotation speed ω1 by the rotation holding section 20 while the processing liquid L1 is discharged from the nozzle 32A by the processing liquid supply section 30. The rotation speed ω1 is a low rotation speed, and is 100 rpm to 300 rpm as one example. The rotation speed ω1 can be 150 rpm to 250 rpm, or 180 rpm to 220 rpm.

[0109] Next, the control device 100 executes step S33. In step S33, the liquid supply control section 102 continues the supply of the processing liquid L1 by the processing liquid supply section 30 while the rotation of the wafer W1 is increased from the rotation speed ω1 to a rotation speed ω2 by the rotation holding section 20, for example. The rotation speed ω2 is set to a degree at which the processing liquid L1 diffuses on the surface Wa, and is 1000 rpm to 1600 rpm as one example. The rotation speed ω2 can be 1100 rpm to 1500 rpm, or 1200 rpm to 1400 rpm.

[0110] Next, the control device 100 executes steps S34 and S35. In step S34, the liquid supply control section 102 continues the rotation of the wafer W1 at the rotation speed ω2 and the supply of the processing liquid L1 for a prescribed time. The prescribed time is set to a degree at which a liquid film of the processing liquid L1 is formed on the surface Wa. In step S35, the liquid supply control section 102 stops the supply of the processing liquid L1 by the processing liquid supply section 30. The liquid supply control section 102 controls the nozzle moving section 36A to move the nozzle 32A to the avoidance position after the supply of the processing liquid L1 is stopped.

[0111] Next, the control device 100 executes step S36. In step S36, the plate arrangement control section 106 controls the plate arrangement section 80 (the displacement drive section 84) to arrange the plate 70 in the second state to the first state, for example. Further, in step S36, the drying control section 104 reduces the rotation of the wafer W1 from the rotation speed ω2 to a rotation speed ω3 by the rotation holding section 20.

[0112] Next, the control device 100 executes step S37. In step S37, the drying control section 104 waits until a prescribed time elapses after the rotation speed is reduced to the rotation speed ω3, for example. That is, the drying control section 104 rotates the wafer W1 at the rotation speed ω3 for the prescribed time by the rotation holding section 20 to dry the liquid film of the processing liquid L1. Further, the plate arrangement control section 106 continues the arrangement of the plate 70 in the first state during the rotation of the wafer W by the rotation holding section 20 at the rotation speed ω3 by the drying control section 104.

[0113] The rotation speed ω3 can be lower than the rotation speed ω1. The rotation speed ω3 is set to a degree capable of reducing the degree of unevenness of the film thickness caused by the flow of the processing liquid L1 due to centrifugal force, and is, for example, 20 rpm to 200 rpm. The rotation speed ω3 can be 50 rpm to 150 rpm, or 80 rpm to 120 rpm. The prescribed time of rotation at the rotation speed ω3 is set to a degree at which the liquid film of the processing liquid L1 is dried (a coating film of the processing liquid L1 is formed), and is, for example, several tens of seconds.

[0114] Next, the control device 100 executes step S38. In step S38, the control device 100, for example, stops the rotation of the wafer W1 by the rotation holding section 20. Further, the plate arrangement control section 106 controls the plate arrangement section 80 to switch the arrangement of the plate 70 from the first state to the second state. During the execution of steps S31 to S38, the control device 100 can also cause the exhaust section 60 to continuously perform the exhaust of the processing chamber S. With the above, the first liquid processing ends.

[0115] (Second Liquid Processing)

[0116] Figure 12 is a flowchart showing an example of the flow of the second liquid processing of step S04. In the flow of the second liquid processing shown in Figure 12 In the flow of the second liquid processing shown in FIG. 8, steps S41 to S45 are performed in the same manner as steps S31 to S35. In step S46, for example, the plate arrangement control section 106 maintains the plate 70 in the second state (not arranged in the first state) while the drying control section 104 reduces the rotation speed of the wafer W2 with the rotation holding section 20.

[0117] Then, in step S47, the drying control section 104 rotates the wafer W2 at a rotation speed higher than the rotation speed ω3 with the rotation holding section 20 to dry the liquid film of the processing liquid L2. The rotation speed at this time can be 600 rpm to 1400 rpm, or 700 rpm to 1300 rpm, or 800 rpm to 1200 rpm. In the second liquid processing, the drying control section 104 rotates the wafer W2 at a rotation speed higher than the rotation speed ω3 with the rotation holding section 20 for a prescribed time to dry the liquid film of the processing liquid L2. Further, the plate arrangement control section 106 causes the plate arrangement section 80 to continuously arrange the plate 70 in the second state during the rotation of the wafer W2 with the rotation holding section 20 by the drying control section 104 to dry the liquid film of the processing liquid L2. After that, in step S48, the control device 100 stops the rotation of the wafer W2 by the rotation holding section 20.

[0118] [Effects of Embodiments]

[0119] As explained above, the coating developing device 2 includes: a processing chamber S that accommodates the wafer W; a rotation holding portion 20 that can hold the wafer W in the processing chamber S and rotate it; a processing liquid supply portion 30 that supplies the processing liquid Ll, L2 to the surface Wa of the wafer W held by the rotation holding portion 20; an exhaust portion 60 that exhausts the gas in the processing chamber S from an exhaust port 62 provided at a position further outward than the outer periphery of the wafer W held by the rotation holding portion 20; a plate 70, 70A, 70B that is arranged in the processing chamber S in such a manner that a part Ca of the circumferential direction of the wafer W held by the rotation holding portion 20 is opposed to the surface Wa and the other part Cb of the circumferential direction of the wafer W is not opposed to the surface Wa; and a plate arrangement portion 80 that can switch between a first state in which the plate 70, 70A, 70B is opposed to the surface Wa of the part Ca and a second state in which the plate 70, 70A, 70B is located at a position further apart from the surface Wa than in the first state.

[0120] In the liquid processing of the wafer W, there is a case where the flow of the gas on the surface Wa after the processing liquid is supplied affects the processing result. There is a case where, depending on the kind of the processing liquid, it is effective to arrange the plate in a state of being close to and opposed to the surface Wa of the wafer W, form a flow path of the gas on the surface Wa, and adjust the result of the liquid processing. For example, in the first liquid processing described above, by forming a flow path of the gas on the surface Wa with the plate 70, 70A, 70B, it is possible to promote the drying of the liquid film of the processing liquid Ll. Thereby, it is possible to suppress the length of the drying time to an allowable level, and reduce the rotation speed of the wafer W during drying, and suppress the film thickness unevenness caused by the flow of the processing liquid Ll during drying.

[0121] On the other hand, there is also a case where the plate 70, 70A, 70B is not needed depending on the kind of the processing liquid. For example, in the second liquid processing described above, the processing liquid L2 of low viscosity spreads "smoothly", and therefore it is not easy to cause film thickness unevenness even if the wafer W is rotated at high speed. In such a case, there is a possibility that when the plate 70, 70A, 70B is arranged, the film thickness unevenness is rather enlarged due to the turbulence of the gas flow. Therefore, in the liquid processing where the plate 70, 70A, 70B is not needed, it is necessary to sufficiently avoid the plate 70, 70A, 70B. However, in the device, it is difficult to secure the avoidance space of the plate 70, 70A, 70B.

[0122] To this end, the plate 70, 70A, 70B is configured to partially oppose the surface Wa in the circumferential direction of the wafer W. Even if the range of the plate 70, 70A, 70B opposing the surface Wa is a part in the circumferential direction of the wafer W, by rotating the wafer W with the rotation holding section 20, the drying promotion effect based on the plate 70, 70A, 70B can be obtained in all regions of the surface Wa. Therefore, the plate 70, 70A, 70B can be downsized without substantially impairing the drying promotion effect of the processing liquid Ll. Thus, it is easy to secure the avoidance space of the plate 70, 70A, 70B. Therefore, in the apparatus that performs the liquid processing requiring the plate and the liquid processing not requiring the plate, it is effective to reduce the influence on the liquid processing result when the plate is not used.

[0123] The plate 70, 70A, 70B can oppose the surface Wa in a part of 40% to 60% in the circumferential direction of the wafer W in the first state. In this case, it is possible to further achieve a balance between the effect of the plate in the liquid processing requiring the plate and the easiness of avoiding the plate in the liquid processing not requiring the plate.

[0124] The plate arrangement section 80 can also displace the plate 70, 70A, 70B at least in the direction perpendicular to the wafer W (the vertical direction Dl). In this case, it is easy to achieve the simplification of the structure of the plate arrangement section 80.

[0125] The plate arrangement section 80 can also displace the plate 70A, 70B in the direction along the surface Wa so that the area of the plate 70, 70A, 70B opposing the wafer W in the second state is smaller than the area of the plate 70, 70A, 70B opposing the surface Wa in the first state. In this case, it is possible to further achieve a balance between the effect of the plate in the liquid processing requiring the plate and the easiness of avoiding the plate in the liquid processing not requiring the plate.

[0126] The plate arrangement section 80 can also incline the plate 70, 70A, 70B with respect to the surface Wa so that the plate 70, 70A, 70B is more apart from the surface Wa in the second state than in the first state. In this case, it is easy to achieve the simplification of the structure of the plate arrangement section 80.

[0127] The exhaust port 62 can also be provided at least at a position corresponding to the part Ca of the plate 70, 70A, 70B opposing the surface Wa in the first state. In this case, it is possible to more reliably form the flow path of the gas for the liquid processing adjustment between the plate and the surface Wa of the wafer W in the first state. Therefore, it is possible to more effectively and flexibly use the plate in the liquid processing requiring the plate.

[0128] The exhaust port 62 can also be provided at a position corresponding to a portion Cb of the plate 70, 70A, 70B that is not opposed to the surface Wa in the first state. In order to remove (recover) sublimates, mist, or liquid droplets, etc. from the processing liquid supplied to the surface Wa, it is necessary to perform exhaust in the processing chamber S during liquid processing. In the above-described structure, gas can be exhausted also at the position where the plate is not opposed, and thus it is possible to suppress the stagnation of sublimates, mist, or liquid droplets, etc. at the position where the plate is not opposed.

[0129] The coating and developing device 2 can further include a liquid supply control section 102 that causes the processing liquid supply section 30 to supply the processing liquid Ll, L2 to the surface Wa to form a liquid film of the processing liquid Ll, L2 on the surface Wa, and a plate arrangement control section 106 that switches the arrangement of the plate 70, 70A, 70B during at least a portion of the period during which the wafer W on which the liquid film is formed on the surface Wa is rotated to the first state or the second state based on at least the kind of the processing liquid. In this case, it is possible to appropriately switch between liquid processing that requires the plate and liquid processing that does not require the plate.

[0130] In Figure 13 , measurement results of the drying time in the case where the opposed range in the circumferential direction of the wafer W was changed are illustrated. In Figure 13 , "no plate" is a measurement result of the drying time in the case where the wafer W is not opposed to the plate. "40%", "50%", and "60%" are measurement results of the drying time in the case where the plate in the first state is used in which the range opposed to the surface Wa in the circumferential direction of the wafer W is 40%, 50%, and 60%, respectively. "Whole circumference" is a measurement result of the drying time in the case where the annular plate is used that is opposed to the whole circumference of the circumferential direction of the wafer W. The measurement conditions are the same except for whether the plate is used and the opposed range in the first state. Hereinafter, the plate that is opposed to a portion of the circumferential direction of the annular plate will be referred to as a "partial plate".

[0131] In the case of "whole circumference", the drying time is reduced to 4 / 10 compared to the case of "no plate". Thus, it is known that the drying of the liquid film on the surface Wa is promoted by the annular plate. On the other hand, in the case of "50%" and "60%", the drying time is reduced to a general degree compared to the case of "no plate", and in the case of "40%", the drying time is reduced to 6 / 10. That is, it is known that even if the whole circumference of the circumferential direction of the wafer W is not opposed, but a partial plate is opposed to the surface Wa in a range of 40% to 60% of the circumferential direction of the wafer W, a drying promotion effect close to the annular plate can be obtained.

[0132] Figures 14(a) and 14(b) are charts illustrating the degree of the effect of the liquid processing by the avoided plate on the film thickness variation. In Figures 14(a) and 14(b), the horizontal axis represents the distance from the center CP (mm) in the radial direction of the wafer W, and the vertical axis represents the measurement result of the film thickness. In Figure 14(a), the measurement value MV1 (dotted line) represents the measurement result of the case where the liquid processing was performed using the liquid processing unit without any plate. The measurement value MV2 (dot chain line) represents the measurement result of the case where the annular plate was avoided above the wafer W. By comparing the measurement value MV1 and the measurement value MV2, it is confirmed that the uniformity of the film thickness is achieved in the wafer W without the plate, in contrast to the case where the annular plate is avoided above, in which the film thickness varies. When the annular plate is avoided above, the flow of the gas having a fast flow rate is generated in the vicinity of the center and the peripheral portion of the wafer W, and thus the film thickness varies.

[0133] The measurement value MV3 (solid line) represents the measurement result of the case where the partial plate is avoided to the same position as the annular plate in the measurement of the measurement value MV2. By comparing the measurement value MV2 and the measurement value MV3, it is confirmed that the film thickness variation is small in the case where the partial plate is used, compared to the case where the annular plate is used, and the effect of the liquid processing by the avoided plate is small.

[0134] According to the above results, it is confirmed that the drying of the liquid film of the processing liquid is promoted by using the partial plate, and that the partial plate is effective in terms of giving consideration to both the promotion of the drying in the liquid processing requiring the plate and the reduction of the effect on the film thickness uniformity in the liquid processing not requiring the plate. Further, it is confirmed that the partial plate is opposed to the surface Wa in the range of 40% to 60% of the circumferential direction of the wafer W in the first state, and thus the above-mentioned consideration effect can be more reliably achieved.

[0135] In Figure 14(b), the measurement value MV4 (solid line) represents the measurement result of the case where the partial plate is avoided so as to be opposed to the surface Wa, except for the displacement to the avoided position in the measurement of the measurement value MV3. In the measurement of the measurement value MV4, the area opposed to the surface Wa in the second state is reduced by about 20% compared to the first state. It is confirmed that the film thickness variation is small in this case, compared to the case where the annular plate is used. Further, it is confirmed that the film thickness variation (the effect on the liquid processing) is further reduced compared to the measurement value MV3 illustrated in Figure 14(a).

[0136] [Second Embodiment]

[0137] Next, the liquid processing unit U1 of the substrate processing apparatus (coating and developing apparatus 2) of the second embodiment will be described. The liquid processing unit U1 of the second embodiment differs from the liquid processing unit U1 of the first embodiment in that the plate 70C is provided instead of the plate 70, and in the switching method of the plate 70C based on the plate arrangement section 80. The plate 70C has a different outer shape from the plate 70. The plate 70C has a line-symmetrical outer shape with respect to a line that bisects the area of the plate 70C through the center of the wafer W, and the center positions of the outer periphery 72 and the inner periphery 74 are substantially the same as each other. The plate arrangement section 80 switches the plate 70C between a first state in which the plate 70C opposes the surface Wa in the portion Ca, and a second state in which the plate 70C opposes the surface Wa in an area smaller than in the first state.

[0138] The plate arrangement section 80 can also change the area of the plate 70C that opposes the surface Wa by displacing the plate 70C in a direction along the surface Wa of the wafer W held by the rotation holding section 20. Alternatively, the plate arrangement section 80 can also change the area of the plate 70C that opposes the surface Wa by inclining the plate 70C with respect to the surface Wa of the wafer W held by the rotation holding section 20. Specifically, as shown in FIG. 8, the plate arrangement section 80 inclines the plate 70C with respect to the surface Wa by rotating the plate 70C about an axis Ax2 that is substantially parallel to the surface Wa of the wafer W held by the rotation holding section 20 (holding section 22). The axis Ax2 is set, for example, so that at least a portion of the plate 70C is between the axis Ax2 and the center CP. In the example shown in FIG. 8, the axis Ax2 is set on the side of the wafer W outside of which the plate 70C is arranged in the first state. Figure 16 Figure 15 Figure 16

[0139] The plate arrangement section 80 can also rotate the plate 70C about the axis Ax2 so as to maintain the state in which at least a portion of the plate 70C opposes the surface Wa also in the second state. That is, the rotation angle about the axis Ax2 that is achieved by the plate arrangement section 80 can also be less than 90°. The plate arrangement section 80 can also rotate the plate 70C about the axis Ax2 to a position in which the plate 70C stands up with respect to the surface Wa in the second state. That is, the rotation angle about the axis Ax2 that is achieved by the plate arrangement section 80 can also be substantially equal to 90°. Alternatively, the rotation angle can also be greater than 90°. In this way, the case in which the plate 70C is switched to oppose the surface Wa in an area smaller than in the first state in the second state also includes the case in which the area of the plate 70C that opposes the surface Wa is zero in the second state.

[0140] Figure 17 ​​​​As shown, the plate arrangement section 80 can also rotate the plate 70C around the axis Ax2 while displacing the plate 70C (axis Ax2) in the vertical direction Dl. When switching from the first state to the second state, first, the plate arrangement section 80 moves the plate 70C arranged in the first state away from the surface Wa (upward) in the vertical direction Dl. Thereafter, the plate arrangement section 80 rotates the plate 70C around the axis Ax2 to the standing state while moving the plate 70C in the vertical direction Dl to approach the surface Wa (downward). When switching from the second state to the first state, first, the plate arrangement section 80 rotates the plate 70C arranged in the second state around the axis Ax2 to the flat state while raising the plate 70C. Thereafter, the plate arrangement section 80 lowers the plate 70C to the vertical direction Dl.

[0141] The coating and developing device 2 of the second embodiment includes: a processing chamber S that accommodates a wafer W; a rotation holding section 20 that can hold and rotate the wafer W in the processing chamber S; a processing liquid supply section 30 that supplies a processing liquid Ll, L2 to a surface Wa of the wafer W held by the rotation holding section 20; an exhaust section 60 that exhausts a gas in the processing chamber S from an exhaust port 62 provided at a position further outside than an outer periphery of the wafer W held by the rotation holding section 20; a plate 70C arranged in the processing chamber S in such a manner that a portion Ca of the wafer W in a circumferential direction thereof opposes the surface Wa and other portions Cb of the wafer W in the circumferential direction thereof do not oppose the surface Wa; and a plate arrangement section 80 that can switch between a first state in which the plate 70C opposes the surface Wa in the portion Ca and a second state in which the plate 70C opposes the surface Wa in an area smaller than in the first state.

[0142] In the coating and developing device 2 of the second embodiment, it is also effective to reduce the influence on the result of liquid processing when the plate is not used in a device that performs liquid processing requiring the plate and liquid processing not requiring the plate.

[0143] The plate arrangement section 80 can also change the area of the plate 70C opposing the surface Wa by inclining the plate 70C with respect to the surface Wa. In this case, it is easy to simplify the structure of the plate arrangement section 80.

[0144] The first and second embodiments have been described above, but the present application is not necessarily limited to the above-described embodiments and various changes can be made within the scope of the gist thereof. In the above-described example, the plate 70 is used to promote drying of a liquid film, but liquid processing adjustment based on the plate 70 is not limited thereto. For example, the plate 70 can also be used in a developing process performed by the liquid processing unit Ul of the processing module 14.

[0145] In the developing process, the liquid processing unit U1 supplies a developing liquid to the surface Wa of the wafer W on which the resist film is formed. The liquid processing unit U1 can supply the developing liquid while rotating the wafer W with the rotary holding portion 20, or can supply the developing liquid while the wafer W is stopped from rotating. The liquid processing unit U1 rotates the wafer W with the rotary holding portion 20 at least during the development of the resist film with the developing liquid supplied to the surface Wa, with the plate 70 opposed to the surface Wa. In this case, the flow of gas is regulated at the central portion and the peripheral portion of the wafer W by the plate 70 opposed to the wafer W, and the temperature on the surface Wa at the time of development of the resist film can be regulated.

[0146] The substrate as a processing target is not limited to a semiconductor wafer, and can be, for example, a glass substrate, a mask substrate, an FPD (Flat Panel Display), or the like.

Claims

1. A substrate processing apparatus characterized by comprising: including: a processing chamber that houses a substrate; a rotation holding portion that holds and rotates the substrate in the processing chamber; a processing liquid supply portion that supplies a processing liquid to a surface of the substrate held by the rotation holding portion; an exhaust portion that exhausts gas in the processing chamber from an exhaust port provided at a position further outward than an outer periphery of the substrate held by the rotation holding portion; a plate that is disposed in the processing chamber so as to be opposed to the surface at a part in a circumferential direction of the substrate held by the rotation holding portion and not to be opposed to the surface at another part in the circumferential direction of the substrate; and a plate disposition portion that is capable of switching between a first state in which the plate is opposed to the surface at the part and a second state in which the plate is located at a position further away from the surface than in the first state, the plate disposition portion being capable of inclining the plate with respect to the surface so that the plate is further away from the surface in the second state than in the first state.

2. The substrate processing apparatus according to claim 1, wherein: the plate is opposed to the surface at 40% to 60% of the part in the circumferential direction of the substrate in the first state.

3. The substrate processing apparatus according to claim 1 or 2, wherein: the plate disposition portion is capable of displacing the plate at least in a direction perpendicular to the surface.

4. The substrate processing apparatus according to claim 3, wherein: the plate disposition portion is further capable of displacing the plate in a direction along the surface so that an area of the plate opposed to the surface in the second state is smaller than an area of the plate opposed to the surface in the first state.

5. The substrate processing apparatus according to claim 1 or 2, wherein: the exhaust port is provided at least at a position corresponding to the part of the plate opposed to the surface in the first state.

6. The substrate processing apparatus according to claim 5, wherein: the exhaust port is further provided at a position corresponding to the part of the plate not opposed to the surface in the first state. further including:

7. The substrate processing apparatus of claim 1 or 2, wherein a liquid supply control portion that causes the processing liquid supply portion to supply the processing liquid to the surface so that a liquid film of the processing liquid is formed on the surface; and a plate disposition control portion that causes the plate disposition portion to switch the disposition of the plate in at least a part of a period in which the substrate on which the liquid film is formed is rotated, to the first state or the second state, based on at least a kind of the processing liquid. including: a processing chamber that houses a substrate; 8. A substrate processing apparatus, characterized by, a rotation holding portion that holds and rotates the substrate in the processing chamber; a processing liquid supply portion that supplies a processing liquid to a surface of the substrate held by the rotation holding portion; an exhaust portion that exhausts gas in the processing chamber from an exhaust port provided at a position further outward than an outer periphery of the substrate held by the rotation holding portion; a plate that is disposed in the processing chamber so as to be opposed to the surface at a part in a circumferential direction of the substrate held by the rotation holding portion and not to be opposed to the surface at another part in the circumferential direction of the substrate; and a plate disposition portion that is capable of switching between a first state in which the plate is opposed to the surface at the part and a second state in which the plate is located at a position further away from the surface than in the first state, the plate disposition portion being capable of inclining the plate with respect to the surface so that the plate is further away from the surface in the second state than in the first state. ​ a plate arrangement section capable of switching between a first state in which the plate opposes the surface at the portion and a second state in which the plate opposes the surface at an area smaller than in the first state, the plate arrangement section changes the area of the plate opposing the surface by tilting the plate with respect to the surface.

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