Wafer boats, process chambers and semiconductor process equipment

Abstract

The present invention provides a wafer boat, a process chamber and a semiconductor process equipment, wherein the wafer boat comprises a support frame, the support frame has a plurality of wafer placement positions arranged at intervals, the wafer boat also comprises an air guide channel, the air guide channel has at least one air inlet and a plurality of air outlets, the air inlet is connected to an air source, each wafer placement position corresponds to at least one air outlet, and the air outlet direction of the air outlet is toward the central area of ​​the corresponding wafer placement position. The application of the present invention can improve the uniformity within the wafer and the utilization rate of the wafer boat.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor process technology, and in particular to a wafer boat, a process chamber and semiconductor process equipment. Background Art

[0002] With the continuous advancement of integrated circuit manufacturing technology, the demand for feature size continues to shrink, and more stringent requirements are placed on the performance and process indicators of equipment in the field of integrated circuit manufacturing. Among them, as the line width of the device continues to shrink, in order to ensure better product consistency and yield, higher requirements are placed on the film formation results, especially uniformity. In particular, vertical furnace equipment processes a large number of product wafers at a time (for example, 12 inches in diameter, 100 to 125 wafers). While meeting the uniformity of thickness within the wafer, it is necessary to ensure the uniformity of thickness between all product wafers in the vertical direction at the same time to meet the consistency of products processed in the same batch.

[0003] In the prior art, a plurality of wafers are usually stacked in a wafer boat at intervals, and then the wafer boat containing the wafers is placed in a process chamber for processing. However, the use of the existing wafer boat and process chamber often results in poor uniformity within the wafer. Summary of the invention

[0004] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a wafer boat, a process chamber and a semiconductor process equipment to improve the uniformity within a wafer.

[0005] To achieve the purpose of the present invention, a first aspect provides a crystal boat, including a support frame, the support frame having a plurality of spaced-apart wafer placing positions, the crystal boat also including an air guide channel, the air guide channel having at least one air inlet and a plurality of air outlets, the air inlet being connected to an air source, each of the wafer placing positions corresponding to at least one air outlet, and the air outlet direction of the air outlet being toward the central area of ​​the corresponding wafer placing position.

[0006] Optionally, the air guide channel includes a main air guide channel and multiple branch air guide channels connected to the main air guide channel, and the entrance of the main air guide channel is used as an air inlet of the air guide channel; each of the film placement positions corresponds to at least one branch air guide channel, and each of the branch air guide channels includes at least one air outlet.

[0007] Optionally, the calibers of the air outlets on the branch airways increase sequentially in a direction away from the inlet of the main airway.

[0008] Optionally, the support frame includes a plurality of support members and a connecting member for connecting two adjacent support members, the plurality of support members are arranged at intervals, and each of the support members has a plurality of film placement positions arranged at intervals along a height direction of the support member.

[0009] Optionally, it further comprises an air guide assembly, wherein the air guide assembly comprises a main air guide member and a plurality of branch air guide members connected to the main air guide member, the main airway is arranged in the main air guide member, and the branch airway is arranged in each branch air guide member;

[0010] The main air guide is arranged along the height direction of the support, and a plurality of branch air guides are arranged at intervals along the height direction of the support, and each branch air guide is arranged along the circumference of the film placing position.

[0011] Optionally, each of the branch air guide members is fixed on the support member and is located in an internal space enclosed by a plurality of the support members and the connecting members, and is used to carry the wafer.

[0012] Optionally, the surface of the branch air guide member close to the center of the film placing position is a curved surface, and a plurality of the air outlets are arranged on the curved surface at intervals along the circumference of the branch air guide member.

[0013] To achieve the purpose of the present invention, a second aspect provides a process chamber, including a chamber body and a wafer boat arranged in the chamber body, wherein the wafer boat is the wafer boat described in the first aspect.

[0014] Optionally, the wafer boat has two air guide channels, and the bottom of the chamber body is provided with two air inlet channels;

[0015] Two air inlet ducts are also provided in the process chamber. The two air inlet ducts are respectively communicated with the two air inlet channels and are respectively communicated with the air inlets of the two air guide channels.

[0016] Optionally, a heat preservation barrel is further included, which is arranged in the chamber body and below the wafer boat, and the air intake duct passes through the heat preservation barrel and is connected to the air inlet of the air guide channel.

[0017] To achieve the purpose of the present invention, a third aspect provides a semiconductor process equipment, including a process chamber, wherein the process chamber is the process chamber described in the second aspect.

[0018] The present invention has the following beneficial effects:

[0019] The wafer boat provided by the present invention not only has a support frame for carrying wafers, but also is provided with an air guide channel, which includes a main air channel and multiple branch air channels connected to the main air channel, and the outlet direction of the branch air channels is toward the central area of ​​the wafer placement position, so as to transport the process gas to the central area of ​​the wafer, so as to effectively increase the air intake volume in the central area of ​​the wafer, make the distribution of the process gas in various areas on the surface of the wafer more uniform, thereby improving the intra-wafer uniformity of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 This is a schematic diagram of the thickness distribution within the wafer obtained using the current wafer boat;

[0021] Figure 2 The gas concentration in the wafer at different positions in the wafer boat and the film thickness of the wafer after the process;

[0022] Figure 3 A schematic diagram of a top view of a wafer boat provided in an embodiment of the present invention;

[0023] Figure 4 for Figure 3 Schematic diagram of the cross-sectional structure at AA in the middle;

[0024] Figure 5 for Figure 4 Schematic diagram of the local enlarged structure at point B in the middle.

[0025] Figure 6 A schematic diagram of thickness distribution within a wafer obtained by using the wafer boat provided by an embodiment of the present invention;

[0026] Figure 7 The gas concentration in the wafer at different positions in the wafer boat and the film thickness of the wafer after the process provided by the embodiment of the present invention;

[0027] Figure 8 A schematic diagram of the structure of a process chamber provided by an embodiment of the present invention;

[0028] Fig. 9 A schematic diagram of the top view of the heat preservation barrel provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0029] The present invention is described in detail below, and examples of embodiments of the present invention are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar components or components with the same or similar functions. In addition, if the detailed description of the known technology is unnecessary for the features of the present invention shown, it will be omitted. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be interpreted as limiting the present invention.

[0030] It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as generally understood by those skilled in the art in the art to which the present invention belongs. It should also be understood that terms such as those defined in general dictionaries should be understood to have meanings consistent with the meanings in the context of the prior art, and will not be interpreted with idealized or overly formal meanings unless specifically defined as herein.

[0031] It will be understood by those skilled in the art that, unless otherwise stated, the singular forms "a", "an" and "the" used herein may also include plural forms. It should be understood that when we refer to an element as being "connected" or "coupled" to another element, it may be directly connected or coupled to the other element, or there may be intermediate elements. In addition, "connected" or "coupled" as used herein may include wireless connections or wireless couplings. The term "and / or" as used herein includes all or any unit and all combinations of one or more associated listed items.

[0032] The technical solution of the present invention and how the technical solution of the present invention solves the above-mentioned technical problems are described in detail below with reference to specific embodiments in conjunction with the accompanying drawings.

[0033] This embodiment studies and analyzes the structure of the wafer boat and finds that when the current wafer boat is used for processing, the process gas usually only flows longitudinally along the space on both sides of the wafer, and there is no gas introduction configuration in the horizontal direction of the wafer, resulting in insufficient gas entering the center area of ​​the wafer in the horizontal direction, thereby causing poor uniformity within the wafer. Figure 1 As shown, Figure 1 The following is a schematic diagram of the thickness distribution in the wafer obtained by using the current wafer boat. The arrow in the figure indicates the direction of gas flow. Due to the structural limitation that the existing wafer boat has no horizontal adjustment function, it is difficult to improve the poor uniformity in the wafer through parameter optimization. At the same time, the longitudinal area can only be adjusted by the different temperature zones in the longitudinal direction of the furnace body, and the adjustment ability is limited, so that the gas concentration at different wafer positions in the longitudinal direction of the wafer boat and the wafer film thickness after the process gradually decrease along the gas flow direction. Figure 2 As shown, Figure 2 The gas concentration in the wafer at different positions in the current wafer boat and the film thickness of the wafer after the process. Therefore, under the condition of increasingly stringent process specifications, it is necessary to select the longitudinal area with more uniform airflow distribution and better film forming effect to place the product wafer according to the strictness of the process requirements, and fill the other areas with baffles. In this way, the effective film forming area inside the chamber is greatly reduced, resulting in a significant reduction in the production capacity and equipment utilization of the machine.

[0034] In view of the above problems, this embodiment provides a wafer boat. The wafer boat 100 is equipped with a gas introduction structure along the radial direction of the wafer 200 , which can transport the process gas to the central area of ​​the wafer 200 to improve the intra-wafer uniformity of the wafer 200 .

[0035] like Figure 3 and Figure 4As shown, the wafer boat 100 provided in this embodiment includes a support frame and an air guide channel, wherein the support frame has a plurality of wafer placement positions arranged at intervals, and the wafer placement positions are used to carry wafers. The air guide channel may have at least one air inlet 211 and a plurality of air outlets 23, the air inlet 211 is connected to the air source, each wafer placement position corresponds to at least one air outlet 23, and the air outlet direction of the air outlet 23 is toward the central area of ​​the corresponding wafer placement position. Among them, the wafer placement position can be understood as a position for placing the wafer 200, and the central area of ​​the wafer placement position can be understood as the central area of ​​the whole composed of multiple wafer placement positions.

[0036] The wafer boat 100 provided in this embodiment not only has a support frame for carrying the wafer, but also is provided with a gas guide channel. The gas outlet 23 of the gas guide channel is directed toward the central area of ​​the wafer placement position, and the process gas can be delivered to the central area of ​​the wafer to effectively increase the gas intake volume in the central area of ​​the wafer, so that the distribution of the process gas in various areas on the surface of the wafer is more uniform, thereby improving the uniformity of the wafer within the wafer. Figure 6 shown.

[0037] In a specific implementation of the present embodiment, the gas guide channel may include a main gas channel 21 and a plurality of branch gas channels 22 connected to the main gas channel 21, the entrance of the main gas channel 21 is used as the gas inlet 211 of the gas guide channel, and the main gas channel 21 is used to transport process gas to the branch gas channel 22. Each wafer placement position corresponds to at least one branch gas channel 22, and each branch gas channel 22 includes at least one of the above-mentioned outlets 23. In this way, the process gas transported to the branch gas channel 22 through the main gas channel 21 can be ejected from each outlet 23 and move toward the central area of ​​each wafer placement position corresponding thereto, so as to achieve the purpose of increasing the gas intake amount in the central area of ​​the wafer.

[0038] It should be noted that the structure of the above-mentioned air guide channel is only a preferred implementation mode of this embodiment, and this embodiment is not limited to this. For example, the air guide channel may also only include an air guide channel arranged along the height direction of the wafer boat, and at least one air outlet facing the center area of ​​the wafer placement position is opened corresponding to each wafer placement position.

[0039] Furthermore, the diameter of the air outlet 23 on the branch air channel 22 increases in sequence along the direction away from the air inlet 211 of the main air channel 21 (from bottom to top in the longitudinal direction). For example, the radius of the air outlet 23 can be several millimeters, and the radii of the five air outlets 23 from top to bottom in the longitudinal direction are R5, R4, R3, R2, and R1 respectively. Then, the radii of the five air outlets 23 can be preferably R5=1.8mm; R4=1.6mm; R3=1.4mm; R2=1.2mm; R1=1mm. In this way, the air intake capacity of the top area of ​​the wafer boat 100 can be increased in sequence, and the optimal thickness uniformity between the wafers 200 in the longitudinal direction can be achieved, thereby avoiding the thickness of the wafer 200 showing a gradually thinning slope distribution between the longitudinal temperature zones (such as Figure 2 ), so that the thickness of all wafers 200 presents a consistent straight line distribution between the longitudinal temperature zones (as shown in FIG. Figure 7 shown).

[0040] like Figure 4 As shown, the support frame may include three support members 11 and a connecting member for connecting two adjacent support members 11, the three support members 11 are arranged at intervals from each other, and each support member 11 has a plurality of wafer placement positions arranged at intervals along the height direction of the support member 11. The air guide channel may be arranged on the support member 11 and located outside the wafer placement position to avoid interference with the wafer placement position and affect the placement of the wafer.

[0041] The support member 11 may be a solid or hollow columnar structure, and the three support members 11 may be arranged vertically (when the wafer boat 100 is placed vertically) and spaced evenly in a triangle to enclose a wafer placement area (forming a wafer placement position in the wafer placement area), and the three support members 11 are connected to each other, so that the structure is more stable. Figure 4 As shown, the support frame may also include a top plate 12 and a bottom plate 13 used as the above-mentioned connecting members and a base 14 used as the overall support of the support frame, wherein the top plate 12 and the bottom plate 13 may be arranged opposite to each other and respectively located at the top and bottom of the support member 11, and may be respectively welded to the support member 11 at the edge, and a plurality of bases 14 may be provided, which may be respectively welded to the bottom of the bottom plate 13, and are used to support the upper support member 11, the bottom plate 13, the top plate 12, the above-mentioned air guide channel and the wafer. In addition, a groove or a protruding block protruding toward the wafer placing area may be provided on the side of the support member 11 close to the wafer placing area, which is used as the above-mentioned wafer placing position to support the wafer.

[0042] In a specific implementation of this embodiment, as Figure 3 and Figure 4 As shown, the wafer boat 100 may also include an air guide component, which may be arranged on the support member 11, and the air guide channel may be arranged on the air guide component. In this way, the air guide component is arranged separately, and the air guide channel is arranged on the air guide component, which can facilitate installation and maintenance, and also facilitate adjustment of the position of the air guide port, so that the distribution of the process gas on the surface of the wafer boat 100 and the wafer 200 can be more uniform. Further, the air guide component may include two groups, and the two groups of air guide components may be arranged at uniform intervals along the circumference of the wafer placement position, and may be symmetrical relative to the axis of the wafer placement position, so that the outlet 23 of the branch air guide channel 22 can be arranged in two opposite directions of the wafer, and the process gas can flow from the two opposite directions to the central area of ​​the wafer, which can further increase the flow of the process gas in the central area of ​​the wafer, thereby further enhancing the gas uniformity on the wafer surface.

[0043] In another specific implementation of this embodiment, Figure 3 and Figure 4As shown, the air guide assembly may include a main air guide and a plurality of branch air guides connected to the main air guide, the main air guide may be arranged along the height direction of the support 11, the plurality of branch air guides may be arranged at intervals along the height direction of the support 11, and each branch air guide may be arranged along the circumference of the film placement position. A main airway 21 may be arranged in the main air guide, and a branch airway 22 may be arranged in each branch air guide.

[0044] like Figure 3 and Figure 4 As shown, two groups of gas guide components can be arranged on a support frame including three support members 11, and the two groups of gas guide components can be fixed on two support members 11 respectively, and can be symmetrically arranged relative to another support member 11 (support member 11 without a fixed gas guide component). Each group of gas guide components can include a main gas guide member mentioned above and a plurality of branch gas guide members connected to the main gas guide member, and the plurality of branch gas guide members can be arranged at intervals along the height direction of the main gas guide member, and the main gas guide member can be fixed on the bottom plate 13, and the branch gas guide member can be fixed on the support member 11, and can be located in the internal space enclosed by the plurality of support members 11 and the connecting member, and is used to carry the wafer, which can avoid providing a groove for placing the wafer on the support member 11, thereby improving the mechanical strength of the support member 11. Specifically, the main gas guide member and the plurality of branch gas guide members can be hollow structures to form an air guide channel therein. In addition, a columnar protrusion (which may be but is not limited to a cylindrical shape) may be provided on the side of the support member 11 close to the wafer placement area to fix and support the air guide member (the columnar protrusion on the support member 11 without the air guide member fixed thereon may directly support the wafer).

[0045] It should be noted that the arrangement of the above-mentioned support member 11 and the air guide channel is only a specific implementation of this embodiment, and this embodiment is not limited thereto. For example, the air guide channel can also be directly arranged in the support frame, that is, a hollow support member 11 can be arranged, and a longitudinal main air channel 21 and a plurality of transverse branch air channels 22 can be opened inside the support member 11. The number of branch air channels 22 can correspond to the number of film placement positions (may not all film placement positions are used, so it can also be less than the number of film placement positions). In addition, this embodiment does not limit the specific material and number of the support member 11 and the air guide component. For example, the air guide component can also be a group, and the air guide component can be provided with an annular member or an arc-shaped member, so that one or more arc-shaped branch air channels 22 can be arranged inside it, and then a plurality of air outlets 23 can be arranged on the branch air channel 22 along the circumferential direction. The air guide component can also be three or more groups, as long as multiple groups of air guide components are arranged along the circumferential direction of the film placement position, and the outlet directions of the air outlets 23 on the branch air channels 22 transport gas to the central area of ​​the wafer from different directions.

[0046] In another specific implementation of this embodiment, Figure 3 and Figure 5As shown, the surface of the branch gas guide piece close to the center of the wafer placement position is an arc surface to correspond to the circumference of the wafer 200, so that the distance from the outlet 23 of the branch gas channel 22 to the center of the wafer 200 is consistent (including approximately consistent), so as to further enhance the uniformity of the process gas on the surface of the wafer 200, and multiple outlets 23 can be arranged on the arc surface at circumferential intervals along the branch gas guide piece. By increasing the number of outlets 23, the flow rate of the process gas on the surface of the wafer 200 is further increased, and the process gas can be transported from different positions along the radial direction of the wafer 200 around the wafer 200 to further enhance the gas uniformity on the surface of the wafer 200. Among them, the branch gas guide piece can be a 1 / 4 ring structure, and two can be symmetrically arranged along the axis of the wafer placement position, and each branch gas guide piece can have 10 outlets 23 evenly arranged along the circumferential direction of the wafer 200. As shown in FIG. Figure 3 As shown, the inner diameter Rn of the 1 / 4 ring structure of the branch gas guide member can be smaller than the radius R 0 The outer diameter Rm of the branch gas guide member may be greater than the radius R of the wafer 200. 0 , so that the air guide can support the wafer 200. For example, in the wafer boat 100 for accommodating wafers of radius R 0 When the wafer 200 is 300 nm, the inner diameter Rn of the branch air guide of the 1 / 4 ring structure may be less than 300 nm, and the outer diameter Rm may be greater than 300 nm. Rm may preferably be 302 mm, and Rn may preferably be 298 mm.

[0047] It should be noted that the arrangement of the above-mentioned branch gas guide and the gas outlet 23 is only a specific implementation of this embodiment, and this embodiment is not limited to this. For example, the surface of the branch gas guide close to the wafer placement position may also be a plane, or multiple planes may be provided, and the gas outlet 23 may be multiple or one, as long as the process gas can be transported in the radial direction of the wafer 200.

[0048] Based on the same concept as the above-mentioned embodiment of the wafer boat 100, Figure 7 As shown, this embodiment further provides a process chamber, which may include a chamber body 300 and a wafer boat 100 disposed in the chamber body 300 . The wafer boat 100 may be the wafer boat 100 of any of the above-mentioned embodiments.

[0049] The process chamber provided in this embodiment includes the wafer boat 100 of the above embodiment, which can at least achieve the beneficial effects of the above wafer boat 100 and will not be described in detail here.

[0050] In a specific implementation of the present embodiment, the wafer boat 100 may include two gas guide channels, and two gas inlet channels 301 may be provided at the bottom of the chamber body 300; two gas inlet ducts 302 are also provided in the process chamber, and the two gas inlet ducts 302 are respectively connected to the two gas inlet channels 301, and are respectively connected to the gas inlets 211 of the two gas guide channels. In this way, the gas inlet channels 301 are provided on both sides of the bottom of the chamber body 300, and the process gas is introduced from both sides at the same time and transported to the two gas guide channels respectively. The process gas flows upward in the gas guide channels, and then is ejected from the gas outlet 23 along the radial direction of the wafer 200 toward the central area of ​​the wafer 200, thereby effectively increasing the gas intake amount in the central area of ​​the wafer 200 and optimizing the intra-chip uniformity of the thickness of the wafer 200. Specifically, when there is only one or two process gases, they can be selected to enter the wafer boat 100 from the main airways 21 on both sides (if there are two gases, one gas can be introduced from each side), and then the process gases are ejected from the branch airways 22 for a mixing reaction on the surface of the wafer 200; if the process gases do not need to be introduced at the same time, each process gas can be selected to be introduced in sequence from the main airway 21 on the same side according to the order in which the process gases are used.

[0051] The diameter of the main air channel 21 may be larger than the inner diameter of the air intake conduit 302, so that the process gas can diffuse from the air intake conduit 302 to the air guide channel. For example, the radius (inner diameter) Rx of the air intake conduit 302 may be several millimeters, preferably 2.5 mm, to improve the air intake capacity and preheating effect. Accordingly, the radius of the air guide channel may also be several millimeters, preferably 3.5 mm.

[0052] It should be noted that the present embodiment is not limited to this, and the chamber body 300 may also be provided with an air inlet channel 301, and the gas may be respectively delivered to the two air guide channels through the pipeline. The position of the air inlet channel 301 may also not be limited to the bottom of the chamber body 300, as long as the process gas outside the process chamber can be delivered to the wafer boat 100.

[0053] In another specific implementation of this embodiment, the process chamber may further include a heat preservation barrel 400, which may be disposed in the chamber body 300 and below the wafer boat 100. The top and bottom walls of the heat preservation barrel 400 are both provided with through holes 401. Fig. 9As shown, the air intake duct 302 passes through the through hole 401 and is connected to the air intake port 211 of the air guide channel. In this way, the air intake duct 302 passes through the inside of the heat preservation barrel 400. At the same time, since there is no need to reserve a side for the air intake duct 302, the size of the heat preservation sheet in the heat preservation barrel 400 can be increased accordingly (for example, for a wafer boat 100 carrying a wafer 200 with a radius of 300nm, the radius of the heat preservation sheet can be 360mm). The heat preservation barrel 400 can preheat the process gas, that is, the traditional heat preservation barrel 400 can be improved to have both the air intake duct 302 passing and preheating functions, and can enhance the heat preservation capacity and heat preservation effect at the same time. Among them, the aperture of the through hole 401 can be slightly larger than the outer diameter of the air intake duct 302. For example, the radius Rt of the through hole 401 can be the radius Rx+1 of the air intake duct 302. Preferably, Rx=2.5mm and Rt is 3.5mm.

[0054] like Figure 8 As shown, an outer protective tube 500 (such as a quartz tube) can also be provided in the process chamber, and the outer protective tube 500 can be buckled outside the wafer boat 100. After the process gas comes out from the top of the main gas channel 21, it can move downward along the gap between the wafer boat 100 and the outer protective tube 500 until it is discharged from the exhaust pipe of the process chamber. In addition, a heat preservation layer can be provided on the top of the chamber body 300 to improve the heat preservation effect of the process chamber.

[0055] Based on the same concept as the above wafer boat 100 embodiment, this embodiment further provides a semiconductor process equipment, including the process chamber provided in the above embodiment.

[0056] The semiconductor process equipment provided in this embodiment includes a process chamber having the wafer boat 100 , which can at least achieve the beneficial effects of the wafer boat 100 , and will not be described in detail herein.

[0057] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, but the present invention is not limited thereto. For those of ordinary skill in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

[0058] In the description of the present invention, it should be understood that the terms "center", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0059] The terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, "plurality" means two or more.

[0060] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a direct connection, or an indirect connection through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0061] In the description of this specification, specific features, structures, materials or characteristics may be combined in an appropriate manner in any one or more embodiments or examples.

[0062] The above are only some embodiments of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A process chamber, comprising a chamber body and a wafer boat arranged in the chamber body, It is characterized in that The wafer boat comprises a support frame, the support frame has a plurality of wafer placement positions arranged at intervals, the support frame comprises a plurality of support members and a connecting member for connecting two adjacent support members; the plurality of support members are arranged at intervals, and each of the support members has a plurality of wafer placement positions arranged at intervals along the height direction of the support member; The wafer boat further comprises an air guide channel, wherein the air guide channel has at least one air inlet and a plurality of air outlets, wherein the air inlet is connected to an air source, and each wafer placement position corresponds to a plurality of air outlets, and an air outlet direction of the air outlet is toward a central area of ​​the wafer placement position corresponding thereto; The air guide channel includes a main air guide channel and a plurality of branch air guide channels connected to the main air guide channel, the entrance of the main air guide channel is used as the air inlet of the air guide channel; each of the film placement positions corresponds to at least one branch air guide channel, the branch air guide channel is arc-shaped, and each branch air guide channel is provided with a plurality of air outlets along the circumferential direction; The wafer boat further comprises an air guide assembly, the air guide assembly comprising a main air guide member and a plurality of branch air guide members connected to the main air guide member, the main air channel is arranged in the main air guide member, and the branch air channel is arranged in each branch air guide member; The main air guide is arranged along the height direction of the support, and a plurality of branch air guides are arranged at intervals along the height direction of the support, and each branch air guide is arranged along the circumference of the film placing position; Each of the branch air guide members is fixed on the support member and is located in an internal space enclosed by a plurality of the support members and the connecting member, and is used for carrying a wafer; The surface of the branch air guide member close to the center of the film placing position is an arc surface, and a plurality of the air outlets are arranged on the arc surface at intervals along the circumference of the branch air guide member; The wafer boat has two gas guide channels, and the bottom of the chamber body is provided with two gas inlet channels for respectively introducing different process gases; Two air inlet ducts are also provided in the process chamber. The two air inlet ducts are respectively communicated with the two air inlet channels and are respectively communicated with the air inlets of the two air guide channels.

2. The process chamber according to claim 1, It is characterized in that The calibers of the air outlets on the branch airways increase in sequence along a direction away from the inlet of the main airway.

3. The process chamber according to claim 1, It is characterized in that It also includes a heat preservation barrel, which is arranged in the chamber body and located below the wafer boat. The air intake duct passes through the heat preservation barrel and is connected with the air inlet of the air guide channel.

4. A semiconductor process equipment, comprising a process chamber, It is characterized in that The process chamber is the process chamber described in any one of claims 1 to 3.

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