Stacked power supply topology and inductor device

Abstract

Embodiments of this disclosure relate to multilayer power topologies and inductor devices. According to one configuration, an inductor device includes a core and one or more conductive paths. The core is magnetically conductive and surrounds (encapsulates) the one or more conductive paths. Each conductive path extends from a first end of the inductor device through the core of the inductor device to a second end of the inductor device. The magnetically conductive core is operable to limit (guide, carry, deliver, position, etc.) a corresponding magnetic flux generated from a current flowing through the corresponding conductive path. The core stores the magnetic flux energy (i.e., the first magnetic flux) generated by the current flowing through the first conductive path. One configuration herein includes a power converter assembly comprising a component stack including the inductor device as described above, a first power interface, a second power interface, and one or more switches.

Description

Technical Field

[0001] This disclosure relates generally to inductors, and more particularly to multilayer power supply topologies and inductor devices. Background Technology

[0002] Conventional switching power supply circuits sometimes include energy storage components such as inductors to generate an output voltage that supplies power to the load. For example, to keep the output voltage amplitude within a desired range, the controller uses one or more inductors to control the switching of the input current.

[0003] Typically, a conventional inductor is a component comprising wires or other conductive material, shaped as coils or helices to increase the magnetic flux through the corresponding circuit path. Winding the wires into multiple turns increases the number of corresponding magnetic flux lines in the corresponding inductor component, thereby increasing the magnetic field and thus increasing the overall inductance in the corresponding inductor component. Summary of the Invention

[0004] This disclosure includes the observation that conventional inductor components are suitable for planar circuit applications, where a plurality of different components are mounted on a respective planar surface of a power supply board, and these components are coupled to each other via circuit traces arranged on that planar surface. Such a topology (providing horizontal current flow in the power supply board) inevitably makes it difficult to produce compact, efficient, and high-current output power supply circuits. Therefore, conventional power supply circuits implementing one or more inductors are undesirable.

[0005] More specifically, for power converters that provide a target output current of 1000 Amp at an output voltage below 2V, existing technology implements the voltage regulator via a power supply circuit that achieves horizontal power flow. The main problem with conventional topologies that achieve horizontal power flow is:

[0006] • Because the I / O traces required for high-frequency communication between the CPU and memory and other cores may be interfered with, the PoL (Point of Load) stage of the corresponding circuit cannot be moved close to the CPU (Central Processing Unit) load due to certain "reserved" areas.

[0007] • The pure conduction losses of the copper traces at the output of the VRM (Voltage Regulator Module) drive current into the processor.

[0008] • The proximity of the VRM on either side of the output channel to the data channel and potential noise coupling.

[0009] The impedance of copper traces limits the maximum transient response speed.

[0010] • To handle transient responses, a large number of output capacitors and cavity capacitors are needed near and below the processor.

[0011] • It consumes a significant amount of surface space on the motherboard at the CPU load side.

[0012] As the dynamic current consumption of the corresponding load increases, all of the above problems will become more serious.

[0013] In contrast to conventional techniques, the embodiments described herein provide novel and improved inductor components and novel and improved stacked power converter topologies.

[0014] First embodiment – ​​Improved inductor components

[0015] The first embodiment in this article includes a novel inductor device and a method for manufacturing the same.

[0016] For example, a manufacturer manufactures an inductor device (component) comprising: a core material and a first conductive path. The core material is magnetically conductive and surrounds (encapsulates) the first conductive path. The first conductive path (first inductive path) extends from a first end (such as the proximal end) of the inductor device through the core material of the inductor device to a second end (such as the distal end) of the inductor device. The magnetically conductive core material is operable to limit (and / or guide, carry, deliver, position, etc.) a first magnetic flux generated by a first current flowing through the first conductive path. The core material is operable to store magnetic flux energy (i.e., the first magnetic flux) generated by the current flowing through the first conductive path.

[0017] According to an additional embodiment, the manufacturer fabricates the inductor device as including: a second conductive path (second inductive path) spaced apart from the first conductive path in a core material. The second conductive path extends from a first end of the inductor device through the core material to a second end of the inductor device. The magnetically conductive core material is operable to limit (guide, carry, deliver, position, etc.) a second magnetic flux generated by a second current flowing through the second conductive path.

[0018] In some other embodiments, the manufacturer fabricates the inductor device to include a third conductive path extending from a first end of the inductor device to a second end of the inductor device. This third conductive path is a return path operable to deliver a first current (from the first conductive path) and a second current (from the second conductive path) back to a reference voltage such as ground.

[0019] Additional embodiments described herein include a first conductive path and a second conductive path for manufacturing an inductor device in parallel.

[0020] In another embodiment, the second conductive path is fabricated to be magnetically coupled to the first conductive path, wherein a second current flowing through the second conductive path induces (through magnetic flux) a current flowing through the first conductive path.

[0021] The coupling coefficient between the first and second conductive paths in an inductive device can be any suitable value. For example, in one embodiment, the inductive coupling coefficient between the first and second conductive paths is between 0.6 and 0.95. In some cases, the inductive coupling can be less than 0.6 and even as low as zero.

[0022] In some other embodiments, the manufacturer also fabricates a second conductive path extending from a first end of the inductor device to a second end of the inductor device; the second conductive path includes a ring of metallic material (or a shielding layer) in which the first conductive path and the core material reside.

[0023] The core material can be made of any suitable material and has any suitable flux permeability. In one embodiment, the flux permeability of the core material is between 30 and 50 Henry / meter. According to an additional embodiment, the core material has a flux permeability between 10 and 1000 Henry / meter.

[0024] In an additional embodiment, the manufacturer manufactures the inductor device such that the core material through which the first conductive path passes does not contain any air gaps.

[0025] According to an additional embodiment, the manufacturer fabricates the inductor device as described herein as including a first open material ring comprising a first bent metal material layer (a first inductive path) and a second bent metal material layer (a second inductive path). The first bent metal material layer is a first conductive path extending through a core material. The second bent metal layer is a second conductive path extending through the core material. In a manner similar to that previously discussed, the first open material ring (the first bent layer and the second bent layer) extends from a first end of the inductor device (such as the input end of a first node) to a second end of the inductor device (such as an output end or an output node).

[0026] In other embodiments, the manufacturer fabricates the inductor device comprising a third bent metal material layer and a fourth bent metal material layer extending through a core. The third bent metal material layer is a third conductive path (inductive path) extending through the core. The fourth bent metal material layer is a fourth conductive path (inductive path) extending through the core. In one embodiment, the manufacturer fabricates the third and fourth bent metal material layers as portions of a second open material ring, which is concentrically arranged relative to the previously discussed first open material ring (the first and second bent metal material layers in the inductor device).

[0027] Additional embodiments described herein involve fabricating one or more conductive paths in a cylindrical shape within a core material. The core material encapsulates one or more conductive paths (inductive paths) within an inductor device. In one embodiment, the core material contacts or surrounds a corresponding surface of one or more conductive paths.

[0028] In another embodiment, the manufacturer fabricates the inductor device including a first set of conductive paths arranged to form a first ring; the first set of conductive paths includes a first conductive path, each conductive path in the first set extending from a first end of the inductor device to a second end of the inductor device. The manufacturer further fabricates the inductor device including a second set of conductive paths arranged in a second ring. Each conductive path in the second set extends from a first end of the inductor device to a second end of the inductor device. In one embodiment, the first conductive path ring is concentric with respect to the second conductive path ring.

[0029] In an additional embodiment, each of the one or more conductive paths (such as pillars, rods, surfaces, etc.) passing through the core material of the inductor device follows a corresponding non-winding path from a first end of the inductor device to a second end of the inductor device. Therefore, the one or more conductive paths described herein are easy to manufacture.

[0030] In additional embodiments, the embodiments herein include a system comprising: a circuit board; and one or more inductor devices as described herein. In one embodiment, the inductor devices are arranged in a power converter (such as a power stack assembly or other suitable hardware) fixed to the circuit board; the power converter is operable to generate an output voltage (output current) that supplies power to a load fixed to the circuit board or a load fixed to the power stack assembly.

[0031] Additional embodiments described herein include the manufacture of the system. For example, embodiments herein include a receiving circuit board; a power converter is attached to the circuit board, the power converter circuitry including one or more inductor devices described herein. The power converter is operable to generate an output voltage (output current) to power a load attached to the circuit board.

[0032] The inductor devices described herein offer advantages over conventional inductor devices and are useful. For example, the inductance provided by each conductive path (inductive path) in the inductor devices described herein can be easily controlled based on parameters such as: i) the distance between the first and second ends of the inductor device; ii) the permeability of the core material; iii) the number of conductive paths extending through the parallel connections of the inductor device, etc. It should also be noted that the inductor devices described herein are easy to manufacture and provide relatively low inductance values.

[0033] Second embodiment – ​​Stacked power converter

[0034] The second embodiment described herein includes a novel stacked power converter and a method for manufacturing the same.

[0035] For example, a manufacturer produces a power converter based on a stack of multiple components, including a first power interface, one or more switches, one or more inductor devices, and a second power interface. The manufacturer arranges the first power interface at the base of the stack. The manufacturer couples multiple switches to the first power interface to receive power. The manufacturer connects inductor devices to the multiple switches; the inductor devices are operable to generate an output voltage (output current) based on the received power. The manufacturer connects the second power interface to the inductor devices, which is operable to receive and output the output voltage (output current) generated by the inductor devices.

[0036] According to an additional embodiment, the manufacturer arranges one or more switches between a first power interface and an inductor device in the stack. The manufacturer also arranges the inductor device between multiple switches and a second power interface in the stack.

[0037] In yet other embodiments, the manufacturer fabricates the first power interface to include a first contact element operable to connect the first power interface at the base of the stack to a host substrate. The manufacturer fabricates the second power interface to include a second contact element operable to secure a dynamic load to the stack.

[0038] Additional embodiments described herein include fixing a dynamic load to a second power interface, operable to deliver an output voltage (output current) from the inductor device to the dynamic load. Additionally, the manufacturer fabricates the first power interface to couple multiple switches to an input voltage node (from which it receives an input voltage) and a reference voltage node (from which it receives a ground reference voltage). In one embodiment, one or more switches in the stack are vertical field-effect transistors arranged between the first power interface and the inductor device.

[0039] In other embodiments, the manufacturer arranges multiple switches in a stack to switch between an inductive path that couples an input voltage received through a first power interface to an inductor device and one or more inductive paths that couple a reference voltage received through the first power interface to the inductor device. In one embodiment, one or more inductive paths of the inductor device extend from the multiple switches in the stack to a second power interface in the stack.

[0040] In other embodiments, the manufactured component stack (such as a first power interface, one or more switches, an inductor device, and a second power interface) is a power converter operable to convert an input voltage received at the first power interface into an output voltage (output current) output from the second power interface. The manufacturer fabricates the inductor device to include multiple inductive paths. The manufacturer arranges the multiple inductive paths between multiple switches and the second power interface in the stack. In one embodiment, fabricating the multiple inductive paths includes fabricating the multiple inductive paths to include a first inductive path and a second inductive path extending through a core material of the inductor device. The first inductive path is arranged in a first phase of the power converter. The second inductive path is arranged in a second phase of the power converter. During operation of the power converter, the combination of the parallel-arranged first and second phases collectively produces the output voltage (output current).

[0041] Alternatively or in some other embodiments, the plurality of inductive paths includes a first inductive path and a second inductive path: the first inductive path is arranged in a phase of the power converter, and the second inductive path is magnetically coupled to the first inductive path to apply magnetic energy regulation (providing voltage output boost capability) to the first inductive path. In this case, the combination of the phase and the input (such as magnetic energy regulation) from the second inductive path is operable to generate an output voltage (output current).

[0042] Additional embodiments described herein include one or more inductive paths extending between a first layer comprising one or more switches in a stack and a second layer of the stack comprising a second power interface. In this case, each of the one or more inductive paths is a corresponding non-winding path extending from the first layer comprising a plurality of switches in the stack to the second layer comprising the second power interface in the stack.

[0043] More specifically, the manufacturer fabricates the inductive path of the inductor device as including a first inductive path and a second inductive path. The first inductive path is fabricated as a first non-winding path extending from a first layer including multiple switches in the stack to a second layer including a second power interface in the stack, and the second inductive path is fabricated as a second non-winding path extending from the first layer including multiple switches in the stack to the second layer including the second power interface in the stack.

[0044] In an additional embodiment, the manufacturer manufactures the inductor device as including: i) a core material that is a magnetically conductive ferromagnetic material, and ii) a first conductive path extending from a first end of the inductor device through the core material to a second end of the inductor device, the presence of the core material making the first conductive path a first inductive path.

[0045] As described above, the fabricator can be configured to fabricate any number of inductive paths (conductive paths) through the core material. In one embodiment, the fabricator fabricates the inductor device as including a second conductive path extending from a first end of the inductor device through the core material to a second end of the inductor device. As discussed herein, the presence of a magnetic core material in the inductor device makes the second conductive path a second inductive path.

[0046] Additional embodiments described herein include parallel connection of multiple inductive paths, such as a first inductive path and a second inductive path in an inductor device. Any number of inductive paths in an inductor device can be connected in parallel to provide a desired total inductance. Therefore, in addition to controlling parameters such as the permeability of the core material and the corresponding length of each non-winding conductive path in the inductor device, embodiments described herein may also include parallel connection of two or more inductive paths to control the inductance.

[0047] Additional embodiments described herein include fabricating the stack to include a second conductive path extending from a first layer of the stack including a first power interface and a second layer of the stack including a second power interface, the second conductive path being coupled to a reference voltage node. In one embodiment, the second conductive path of the inductor device provides perimeter electromagnetic shielding.

[0048] In some other embodiments, the manufacturer: arranges a second conductive path in a first layer of the stack, the second conductive path being coupled to an input voltage node; the manufacturer manufactures the stack to include a first capacitor coupled between the first and second conductive paths. The manufacturer also arranges a third conductive path in a second layer of the stack, including a second power interface, the third conductive path being operable to deliver an output voltage (output current) to a dynamic load, such as a dynamic load. In one embodiment, the manufacturer manufactures the stack to include a second capacitor in a third layer; in this case, the second capacitor is coupled between the third and second conductive paths.

[0049] Additional embodiments described herein include, via a fabrication apparatus: fabricating a plurality of switches comprising a first switch and a second switch; coupling the source node of the first switch to a reference voltage node of a first power interface; coupling the drain node of the first switch to an inductive path of an inductor device; coupling the drain node of the second switch to an input voltage node of the first power interface; and coupling the source node of the second switch to an inductive path of the inductor device. Additional embodiments described herein include: coupling a controller to the stack. The controller is operable to control the switching of the first and second switches to convert an input voltage received at the input voltage node into an output voltage (output current).

[0050] In additional embodiments, the embodiments herein include a system comprising: a circuit board (such as a standalone board, a motherboard, a standalone board intended to be coupled to a motherboard, etc.); a component stack (such as a power stack assembly) including one or more inductor devices; and a load powered by an output voltage (output current). The load can be any suitable circuitry that can be located on a standalone circuit board, such as a CPU (Central Processing Unit), GPU, and ASIC (such as including one or more artificial intelligence accelerators).

[0051] Additional embodiments described herein include the fabrication of the system. For example, embodiments described herein include receiving a circuit board; attaching the base of a component stack (such as a power supply stack assembly) to the circuit board, the component stack being operable to generate an output voltage (output current) to power a load attached to the circuit board.

[0052] Stacks such as those described herein (such as vertical stacks and other assemblies) offer advantages over conventional power converters. For example, the power converter stacks described herein provide novel connectivity of components in the assembly (such as via the stack), thereby shortening circuit paths and reducing losses.

[0053] These and other more specific embodiments are disclosed in more detail below.

[0054] Note that any resources implemented in the systems discussed herein (such as a manufacturer) may include one or more computerized devices, controllers, mobile communication devices, handheld or laptop computers, etc., to perform and / or support any or all of the methods disclosed herein. In other words, one or more computerized devices or processors may be programmed and / or configured to operate as explained herein to perform the different embodiments described herein.

[0055] Additional embodiments described herein include software programs for performing the steps and operations outlined above and detailed below. One such embodiment includes a computer program product comprising a non-transitory computer-readable storage medium (i.e., any computer-readable hardware storage medium) on which software instructions are encoded for subsequent execution. When executed in a computerized device (hardware) having a processor, the instructions program the processor (hardware) to and / or cause the processor (hardware) to perform the operations disclosed herein. Such arrangements are typically provided as software, code, instructions, and / or other data (e.g., data structures) arranged or encoded on non-transitory computer-readable storage media such as optical media (e.g., CD-ROMs), floppy disks, hard disks, memory sticks, storage devices, or firmware such as one or more ROMs, RAMs, PROMs, etc., or other media such as application-specific integrated circuits (ASICs). Software or firmware or other such configurations may be installed on a computerized device to cause the computerized device to perform the techniques described herein.

[0056] Therefore, the embodiments described herein relate to methods, systems, computer program products, etc., that support the operations discussed herein.

[0057] One embodiment includes a manufacturer, such as a computer-readable storage medium and / or system having instructions thereon stored thereon for manufacturing an inductor device. When executed by computer processor hardware, the instructions cause the computer processor hardware (such as one or more processor devices or hardware located in the same or different locations) to: receive a core material, the core material being a magnetically conductive material; and arrange a first conductive path in the core material extending from a first end of the inductor device through the core material to a second end of the inductor device, the core material being operable to limit a first magnetic flux generated by a current flowing through the first conductive path.

[0058] Another embodiment described herein includes a manufacturer, such as a computer-readable storage medium and / or system having instructions thereon stored thereon for manufacturing a power supply stack assembly. When executed by computer processor hardware, the instructions cause the computer processor hardware (such as one or more processor devices or hardware located at the same or different locations) to: arrange a first power interface at the base (first layer) of the stack (power supply stack assembly, such as a power converter component stack); electrically couple a plurality of switches (arranged at a second layer of the stack) to the first power interface to receive power; electrically connect an inductor device (arranged at a third layer of the stack) to the plurality of switches, the inductor device being operable to generate an output voltage (output current) based on the received power; and electrically connect a second power interface (arranged at a fourth layer of the stack) to the inductor device, the second power interface being operable to receive and output the output voltage (output current) generated by the inductor device.

[0059] For clarity, the order of the steps above has been added. Note that any processing steps discussed in this article can be performed in any suitable order.

[0060] Additional embodiments of this disclosure include software programs and / or corresponding hardware for performing any of the method embodiment steps and operations outlined above and disclosed in detail below.

[0061] It should be understood that the systems, methods, devices, instructions on computer-readable storage media discussed herein can also be strictly embodied as software programs, firmware, a mixture of software, hardware and / or firmware, or as standalone hardware, such as in a processor (hardware or software, in an operating system or in a software application).

[0062] It should be noted further that while the embodiments discussed herein are applicable to switching power supplies, the concepts disclosed herein can be advantageously applied to any other suitable topology.

[0063] Additionally, it should be noted that although each of the different features, techniques, configurations, etc., described herein may be discussed in different places within this disclosure, it is intended that each concept may optionally be practiced independently of or in combination with each other, where appropriate. Therefore, one or more of the inventions described herein can be embodied and viewed in many different ways.

[0064] Additionally, it should be noted that the preliminary discussion of the embodiments herein (“Summary”) is intentionally not to specify every embodiment and / or incremental novelty of this disclosure or the claimed invention. Rather, this brief description provides only general embodiments and corresponding novelty of conventional art. For further details and / or possible aspects (arrangements) of the invention, the reader will be directed to the “Detailed Description” section (which is an overview of the embodiments) and the corresponding drawings of this disclosure, as further discussed below. Attached Figure Description

[0065] Figure 1A This is an example diagram showing a three-dimensional (perspective) view of an inductor device according to embodiments herein;

[0066] Figure 1B This is an example diagram showing a top view of an inductor device according to embodiments herein;

[0067] Figure 1C This is an example three-dimensional view illustrating an inductor device according to embodiments herein;

[0068] Figure 1D This is an example diagram illustrating different combinations of inductive paths (conductive paths) for connecting inductor devices according to embodiments herein;

[0069] Figure 2 This is an example diagram illustrating the magnitude of the magnetic flux density in the core material of an inductor device according to embodiments herein;

[0070] Figure 3A This is an example top view of an inductor device (inductor assembly) according to embodiments herein;

[0071] Figure 3B This illustrates an embodiment according to the present document. Figure 3A An example diagram of magnetic flux density in an inductor device;

[0072] Figure 4 This is an example top view of an inductor device comprising multiple conductive paths (inductive paths) connected in parallel, according to embodiments herein.

[0073] Figure 5 This is an example top view illustrating multiple conductive paths in an inductor device according to embodiments herein;

[0074] Figure 6 This is an example top view illustrating an arcuate or concentric conductive path in an inductor device according to embodiments herein;

[0075] Figure 7 This is an example top view illustrating an arcuate conductive path arranged in an inductor device according to an embodiment herein;

[0076] Figure 8A This is an example top view of an inductor device according to embodiments described herein;

[0077] Figure 8B This illustrates an embodiment according to the present document. Figure 8A An example diagram of magnetic flux density in an inductor device;

[0078] Figure 9A This is an example diagram illustrating an arcuate conductive path (inductive path) arranged in an inductor device according to embodiments herein;

[0079] Figure 9B This illustrates an embodiment according to the present document. Figure 9A An example diagram of magnetic flux density in an inductor device;

[0080] Figure 10A This is an example diagram illustrating an arcuate conductive path (inductive path) arranged in an inductor device according to embodiments herein;

[0081] Figure 10B This illustrates an embodiment according to the present document. Figure 10A An example diagram of magnetic flux density in an inductor device;

[0082] Figure 11 This is an example diagram illustrating multiple conductive paths and corresponding magnetically coupled connections according to embodiments herein;

[0083] Figure 12 This is an example diagram illustrating the connection of circuit components in a power supply according to embodiments herein;

[0084] Figure 13 This illustrates a multiphase power supply supporting vertical power flow according to embodiments herein. Figure 12 Example side view (in Chinese);

[0085] Figure 14 This is an example diagram illustrating the connection of circuit components in a power supply according to embodiments herein;

[0086] Figure 15 This illustrates support for vertical power flow according to embodiments described herein. Figure 14 Example side view of the power supply in the image;

[0087] Figure 16 This is an example diagram illustrating a multi-stage power converter circuit and a corresponding bypass circuit according to embodiments herein;

[0088] Figure 17 This is an example diagram illustrating a power supply according to an embodiment of the present document;

[0089] Figure 18 This is an example diagram illustrating an example computer architecture (manufacturing system, hardware, etc.) operable to perform one or more methods according to embodiments herein;

[0090] Figure 19 These are example diagrams illustrating methods according to embodiments described herein;

[0091] Figure 20 These are example diagrams illustrating methods according to embodiments described herein;

[0092] Figure 21 This is an example diagram illustrating a circuit assembly according to embodiments herein;

[0093] Figure 22 These are example diagrams illustrating circuit assemblies according to embodiments herein; and

[0094] Figure 23 This is an example diagram illustrating a circuit assembly according to an embodiment described herein.

[0095] As illustrated in the accompanying drawings, the foregoing and other objects, features, and advantages of the embodiments described herein will become clear from the more specific description below, in which the same reference numerals refer to the same parts in different views. The drawings are not necessarily drawn to scale, but are intended to illustrate embodiments, principles, concepts, etc. Detailed Implementation

[0096] The first embodiment described herein includes a novel and improved inductor device. The inductor device includes a core and one or more conductive paths. The core is magnetically conductive and surrounds (encapsulates) the one or more conductive paths. Each conductive path extends from a first end of the inductor device through the core of the inductor device to a second end of the inductor device. The magnetically conductive core is operable to limit (guide, carry, deliver, position, etc.) a corresponding magnetic flux generated from a current flowing through the corresponding conductive path. The core stores the magnetic flux energy (i.e., the first magnetic flux) generated from the current flowing through the first conductive path. In one embodiment, the inductor device includes a second conductive path.

[0097] A second embodiment of this document includes a power converter assembly comprising a component stack. The component stack includes a first power interface, a plurality of switches, inductor devices, and a second power interface. The first power interface is disposed at the base of the stack. The plurality of switches are coupled to the first power interface to receive power. One or more inductor devices are connected to the plurality of switches. The inductor devices are operable to generate an output voltage (output current) based on the power received from the switches. The second power interface is connected to the inductor devices and is operable to receive the output voltage (output current) from the one or more inductor devices and output the output voltage (output current) to a dynamic load.

[0098] The embodiments described herein address (but are not limited to) the following problems: providing reduced processor core voltage (lower source voltage) while offering continuous regulation despite significant fluctuations in transient current consumption. One objective of the embodiments described herein is to accommodate rapid power consumption, such as variations between 0 and 1000 Amp, while maintaining regulation of the corresponding power supply output voltage (output current).

[0099] Some embodiments described herein include a final power stage (such as a DC-DC converter, or commonly referred to as a VRM or point-of-load converter) that is manufactured and positioned directly beneath the dynamic processor load. Unlike conventional techniques, this implementation provides a vertical power flow instead of the conventional horizontal power flow discussed earlier. Positioning power converter assemblies (such as stacks) directly beneath the dynamic load, as described herein, can offer advantages over conventional techniques, such as:

[0100] • Significantly reduces conduction losses between the output of the corresponding DC-DC converter and the dynamic load processor.

[0101] • Significantly reduces noise coupling from DC-DC converter assemblies to data signals.

[0102] • Significantly improves transient response (such as the amount of current delivered to the load when rapidly increasing or decreasing).

[0103] • Significantly reduces the need for cavity / output capacitors.

[0104] • Improved overall power density

[0105] • This frees up direct motherboard space next to the dynamic load processor for use with other peripheral components or circuit assemblies.

[0106] More specifically, the embodiments described herein can achieve the minimum possible power loop by operating primarily via vertical power flow, which significantly reduces parasitic inductance and the associated switching losses.

[0107] Now, referring to the attached diagram, Figure 1A This is an example diagram showing a three-dimensional view of an inductor device according to an embodiment herein.

[0108] As shown in the figure, Figure 1A The inductor device 110 includes a core material 120 and conductive paths 131 and 132. The core material 120 encapsulates (surrounds) each of the conductive paths 131 and 132. If desired, each of the conductive paths 131 and 132 is surrounded by an insulating material layer (such as a non-conductive material, thus not in contact with the core material 120). This converts conductive path 131 into a first inductive path; this converts conductive path 132 into a second inductive path.

[0109] The core 120 surrounding the conductive paths 131 and 132 is magnetically conductive. The core can be made of any suitable material. In one embodiment, as a non-limiting example, the core 120 has a magnetic flux density between 25 and 60 Henry per meter.

[0110] In an additional embodiment, the manufacturer 140 described herein manufactures the inductor device 110 such that the core 120 traversed by the first conductive path 131 does not include any air gaps or voids not filled with magnetically conductive material.

[0111] As discussed further herein, the inductor device 110 can be manufactured to include any number of conductive paths arranged within the surrounding conductive paths 133.

[0112] In yet another embodiment, each of the conductive paths 131, 132, and 133 is made of any suitable conductive material, such as metal or metal alloy.

[0113] In some other embodiments, each conductive path of conductive paths 131 and 132 extends from a first axial end 141 (also referred to as a first surface, interface, etc.) of inductor device 110 through the core material 120 of inductor device 110 to a second axial end 142 (such as a second surface, interface, etc.) of inductor device 110. Accordingly, in one embodiment, inductor device 110 is an axial device having an input axial end 141 and an output axial end 142.

[0114] Conductive paths 131 and 132 can be manufactured in any suitable shape, such as rod-shaped, columnar, curved, loop, open loop, etc. In one embodiment, each conductive path is a non-winding circuit path extending through the inductor device 110. Note that regardless of the embodiment, the overall shape of the inductor device is cylindrical (in a strict geometric sense, such as generated by a busbar), but the additional embodiments herein implement the inductor device and corresponding elements in any suitable shape, size, or manner.

[0115] Figure 1B This is an example diagram showing a top view of an inductor device according to an embodiment herein.

[0116] As shown in the top view of inductor device 110, each of conductive paths 131 and 132 resides within the range of conductive path 133 surrounding the perimeter (through the curved shielding layer) of inductor device 110.

[0117] Therefore, embodiments herein include fabricating a conductive path 133 extending from a first end 141 of the inductor device 110 to a second end 142 of the inductor device 110; the second conductive path 133 may be a ring of metal material in which the first conductive paths 131 and 132 and the core material 120 reside.

[0118] Figure 1C This is an example three-dimensional diagram illustrating an inductor device according to embodiments described herein.

[0119] This example embodiment illustrates the current through each conductive path 131, 132, and 133.

[0120] For example, current 151 (in the upward direction) flows through conductive path 131. According to the right-hand rule, current 151 flowing through conductive path 131 generates magnetic flux 161, which penetrates into a corresponding first portion of core material 120 in inductor device 110.

[0121] As further shown in the figure, current 152 (in the upward direction) flows through conductive path 132. According to the right-hand rule, current 152 flowing through conductive path 132 generates magnetic flux 162, which penetrates into the corresponding second portion of core material 120 in inductor device 110.

[0122] In one embodiment, the first conductive path 131 is magnetically coupled to the second conductive path 132.

[0123] In one embodiment, conductive path 133 provides a return path for a combination of currents 151 and 152 (such as current delivered to a load). As shown, conductive path 133 carries current 153 (return current from the load) in the downward direction.

[0124] The directions of currents 151, 152, and 153 are shown as non-limiting example embodiments. Note that currents 151, 152, and 153 can flow in any direction.

[0125] According to an additional embodiment, the magnetic core 120 of the inductor device 110 is operable to limit (guide, carry, transport, position, etc.) the corresponding magnetic fluxes 161 and 162 generated from the current flowing through the respective conductive paths 131 and 132.

[0126] For example, core 120 stores at least temporarily the first magnetic flux energy 161 (i.e., magnetic flux) generated from the current 151 flowing through the first conductive path 131; core 120 stores the first magnetic flux energy 162 (i.e., magnetic flux) generated from the current 152 flowing through the second conductive path 132; and so on.

[0127] The presence of the core material 120 makes the conductive path 131 a first inductive path extending from the first end 141 (or face) of the inductor device 110 through the core material 120 to the second end 142 (or face) of the inductor device 110.

[0128] In some other embodiments, the second conductive path 132 is fabricated to be magnetically coupled to the first conductive path 131, wherein the second current 152 flows through the second conductive path 132, inducing (through magnetic flux coupling) a current 151 through the first conductive path 131.

[0129] Note that the coupling coefficient between the first conductive path 131 and the second conductive path 132 in the inductor device 110 can be any suitable value. For example, in one embodiment, the inductive coupling coefficient between the first conductive path 131 and the second conductive path 132 is between 0.6 and 0.95. In yet other embodiments, the first conductive path 131 is a network magnetically coupled to the second conductive path 132.

[0130] In an additional embodiment, each of the one or more conductive paths 131, 132, etc. (such as pillars, rods, etc.) passing through the core material 120 of the inductor device 110 follows a corresponding non-winding path from the first end 141 of the inductor device 110 to the second end 142 of the inductor device 110. Therefore, the one or more conductive paths 131, 132, etc. described herein are easy to manufacture.

[0131] The inductor device described herein offers advantages over conventional inductor devices. For example, the inductance provided by each conductive path in the inductor device can be easily controlled based on parameters such as: i) the distance d between the first end 141 and the second end 142 of the inductor device 110, ii) the permeability of the core material 120, iii) the number of parallel conductive paths through the inductor device 110, etc. As described herein, the inductor device 110 is easy to manufacture and provides a relatively low inductance value for any circuit application. In one embodiment, as further discussed herein, the inductor device 110 is suitable for use in multilayer circuits such as power converter circuits.

[0132] Note that in one embodiment, the inductor device 110 (such as a so-called die) is essentially a low / flat profile coupled inductor component (including one or more inductive paths) that operates with vertical current flow. The inductor device 110 may include any number of conductive paths (such as two or more).

[0133] Figure 1D This is an example diagram illustrating different combinations of inductive paths (conductive paths) for connecting inductor devices according to embodiments herein.

[0134] Additional embodiments described herein include fabricating the first and second conductive paths of the inductor device 110 as parallel connections, such as... Figure 1D Example 191 of (inductor device 110) is shown.

[0135] Additional embodiments described herein include manufacturing the first and second conductive paths of the inductor device 110 such that conductive paths 131 and 132 are connected at the second end 142 rather than at the first end, as described by Figure 1D Example 192 of (inductor device 110) is shown.

[0136] Additional embodiments described herein include manufacturing the first conductive path 131 and the second conductive path 132 of the inductor device 110 such that conductive paths 131 and 132 are not connected at the first end 141 or the second end 142, as... Figure 1D Example 193 of (inductor device 110) is shown.

[0137] Refer again Figure 1C In one embodiment, currents 151 and 152 can both be configured to flow through conductive paths 131 and 132 in the same direction (such as from the first end 141 to the second end 142 or from the second end to the first end).

[0138] Note that, as further discussed herein, conductive paths 131 and 132 (such as pillars, rods, etc.) can be implemented in any suitable manner (such as loops, concentric or concentric ring structures, etc.).

[0139] exist Figure 1C In the example embodiment, multiple conductive paths 131 and 132 are surrounded by a core material 120. Each conductive path of the conductive path can be electrically isolated from the core material 120 via an insulating material layer between the conductive path and the core material 120.

[0140] The outside of the core 120 is a return path or ground connection (e.g., conductive path 133 as described above). This return path (conductive path 133) can be in direct contact with the core 120, or it can be isolated from the core 120 by an insulating material layer that is not part of the core 120.

[0141] According to an additional embodiment, the thickness d of the inductor device 110 (die) can be adjusted to suit the needs of the application. For example, changing the thickness d changes the inductance value associated with the inductor device 110. In one embodiment, since the two currents 151 and 152 induce the same magnetic flux orientation around themselves in the core 120, there are opposite fluxes directly between the two conductive paths 131 and 132. Therefore, if the two currents have the same value, the magnetic flux in these regions cancels out, or if the currents are different, the magnetic flux in these regions is at least reduced.

[0142] Figure 2 An example diagram of a top view (finite element method FEM) simulation of the magnetic flux density in the core of an inductor device according to embodiments herein is shown.

[0143] In this example embodiment, the magnetic flux density simulation assumes a parallel connection of conductive paths 131 and 132, with 60 Amp passing through each conductive path.

[0144] The core material 120 has a relative permeability (μr) of approximately 40. Furthermore, in this example simulation embodiment, the diameter D of each conductive path 131 and 132 is 1.5 mm, the diameter DT of the inductor device 110 is 10 mm, and the thickness of the inductor device 110 (e.g., ...) is... Figure 1AThe diameter d (from the first end 141 to the second end 142) is 4 mm. The resulting inductance associated with the parallel conductive paths 131 and 132 is approximately 32 nH (nanometer Henry).

[0145] Typically, regions 214 and 215 indicate low magnetic flux density to indicate magnetic flux cancellation occurring in the region between the two conductive paths 131 and 132.

[0146] More specifically, in Figure 2 The simulation of the inductor device 110 shows that shaded region 211 has a magnetic flux density of approximately 0.072 Tesla; shaded region 212 has a magnetic flux density of approximately 0.215 Tesla; region 213 has a magnetic flux density of approximately 0.310 Tesla; region 214 has a magnetic flux density of approximately 0.072 Tesla; region 215 has a magnetic flux density of approximately 0.010 Tesla; and so on.

[0147] Figure 3A This is an example top view of an inductor device (inductor assembly) according to embodiments herein.

[0148] This example embodiment illustrates a unique inductive path arrangement where four conductive paths are connected to a single phase of a switching power supply (e.g., a buck converter). In this example embodiment, core utilization is higher due to the ring formation of the four conductive paths (131, 132, 134, and 135), and flux cancellation is extended to a larger area at the center of the core of the inductor device 110, where each conductive path is equally spaced from each other and each conductor path is equidistant from the center 310.

[0149] Figure 3B This illustrates an embodiment according to the present document. Figure 3A An example diagram of magnetic flux density in an inductor device.

[0150] Figure 3B Graph 360 shows the magnetic flux density across the cross-section of the inductor device 110 (die), as indicated by cross-section 350. For example, along the cross-section, the magnetic flux density in the core 120 is approximately zero between lengths BC, DE, and FG. Peak magnetic flux densities appear around locations B and G and gradually taper at distances further from the center 310.

[0151] The presence of four conductive paths 131, 132, 134, and 135 (instead of one or two conductive paths) allows for greater current flow, thereby reducing the amount of peak magnetic flux. This simulation (of current through the conductive paths in inductor device 110-1) assumes a two-phase common output connection, with two conductive paths arranged in each power phase. In this example embodiment, the effective inductance of each pair of conductive paths (e.g., 132 and 135 or 131 and 134) is approximately 33 nH, and the magnetic coupling coefficient is 0.34.

[0152] Figure 4 This is an example top view of an inductor device including multiple conductive paths (inductive paths) according to embodiments herein.

[0153] This embodiment of the inductor device 110-2 includes 24 conductive paths (401, 402, ..., 424).

[0154] The first concentric ring 441 of the conductive path (centered on center 310) includes conductive paths 401, 402, 403, 404, 405, 406, 407, 408, 409, 410, 411, 412, 413, 414, 415, and 416. The second concentric ring 442 of the conductive path (centered on center 310 and concentric with the first ring 421) includes conductive paths 417, 418, 419, 420, 421, 422, 423, and 424.

[0155] A set of conductive paths 451, including conductive paths 401, 402, 403, 404, 405, 406, 407, 408, 417, 418, 419, and 420, are connected in parallel. A set of conductive paths 452, including conductive paths 409, 410, 411, 412, 413, 414, 415, 416, 421, 422, 423, and 424, are connected in parallel.

[0156] In this case, each phase includes 12 conductive paths (inductive paths) connected in parallel.

[0157] This embodiment is useful because the magnetic flux has been shaped such that more core regions experience some form of flux cancellation, not only at the center 310 of the core but also between the conductive paths in the outer ring 421. Furthermore, the peak magnetic flux associated with inductor device 110-2 has been significantly reduced to decrease core losses. A potential drawback of this embodiment is that the effective inductance becomes lower when more conductive paths are implemented in inductor device 110-2. In this case, the resulting inductance is approximately 9 nH for each of groups 451 and 452; the magnetic coupling coefficient between the first group 451 and the second group 452 is 0.27.

[0158] Figure 5 This is an example top view illustrating multiple conductive paths in an inductor device according to embodiments herein.

[0159] Figure 5 An example of inductor device 110-3 illustrates an arrangement in which 28 separate conductive paths are divided into four different groups (PH1, PH2, PH3, and PH4) of conductive paths connected in parallel. In one embodiment, each conductive path in inductor device 110-3 is a non-winding inductive path extending from a first end 141 of the inductor device to a second end of the inductor device (as described above).

[0160] For example, phase PH1 includes seven parallel conductive paths 401, 402, 403, 404, 417, 418 and 425.

[0161] Phase PH2 includes seven parallel conductive paths: 405, 406, 407, 408, 419, 420, and 426.

[0162] Phase PH3 includes seven parallel conductive paths: 409, 410, 411, 412, 421, 422, and 427.

[0163] Phase PH4 includes seven parallel conductive paths: 412, 413, 414, 415, 423, 424, and 428.

[0164] therefore, Figure 5 The inductor device 110-3 shown in the diagram illustrates an arrangement of 28 separate conductive paths from the first end 141 of the inductor device 110-3 through the core material 120 to the second end 142 of the inductor device 110-3. The 28 conductive paths of the inductor device 110-3 are arranged in three concentric rings surrounding a center 310. The concentric rings include rings 561, 562, and 563.

[0165] As shown in the figure, ring 561 includes 16 conductive paths.

[0166] Ring 562 includes 8 conductive paths.

[0167] Ring 563 includes four conductive paths.

[0168] The implementation of inductor device 110-3 utilizes the entire magnetic core and has very effective flux cancellation. Furthermore, the peak flux is further reduced to 331 mT. Here, the effective inductance per phase is approximately 15 nH. The magnetic coupling coefficient between phases is 0.32.

[0169] Figure 6This is an example top view illustrating an arcuate conductive path in an inductor device according to an embodiment herein.

[0170] As described above, the columnar conductive paths 131, 132, etc. are merely one example embodiment; other shapes are also included in the embodiments described herein.

[0171] For example, regarding the processing of maximum current, the toroidal shape is particularly optimal, while further optimization results in a reduction of peak flux due to flux shaping. Figure 6 This is an example diagram illustrating an open-loop design in which a single loop is cut in the middle into two half-conducting path loops 621 and 622 (e.g., one conducting path per phase), each conducting path 621 and 622 handling half of the total current delivered through inductor device 110.

[0172] In this example embodiment, the core regions within the ring (such as the interiors of conductive paths 621 and 622) have almost no flux. However, the outer edges of conductive paths 621 and 622 experience very high peak flux densities. In one example embodiment, the inductance of the open ring 620 is 38 nH, and the coupling coefficient between conductive paths 621 and 622 is 0.57.

[0173] Therefore, in Figure 6 In the illustrated embodiment, the fabricator 140 fabricates the inductor device 110-4 as described herein, including a first open ring 620, which includes a first bent metal material layer (e.g., conductive path 621) and a second bent metal material layer (e.g., conductive path 622).

[0174] First curved metal material layer (from) Figure 6 (Viewed from the top) The inductor device 110-4 is a first conductive path 621, which extends from the first end 141 of the inductor device 110-4 through the core material 120 to the second end 142 of the inductor device 110-4.

[0175] Second curved metal material layer (from) Figure 6 (Viewed from the top) of the inductor device 110-4, the second conductive path 622 extends from the first end 141 of the inductor device 110-4 through the core material 120 to the second end 142 of the inductor device 110-4.

[0176] Figure 7 This is an example top view illustrating an arcuate conductive path arranged in an inductor device according to an embodiment herein.

[0177] This example embodiment includes a concentric formation comprising a first open circle (top view of conductive paths 721 and 722) and an open loop (top view of conductive paths 731 and 732).

[0178] In one embodiment, a semi-circular conductive path and a semi-circular conductive path are connected in parallel on the upper or lower half to form a phase, thus having a two-phase inductor.

[0179] For example, one embodiment herein includes parallel connection of conductive paths 721 and 731 and parallel connection of conductive paths 722 and 732.

[0180] Therefore, in some other embodiments, the manufacturer 140 manufactures the inductor device 110-5 to include a first conductive path 731 (a first bent metal material layer) extending from a first end 141 of the inductor device 110-5 through the core material 120 to a second end 142 of the inductor device 110-5, and a second conductive path 732 (a second bent metal material layer). As shown, the manufacturer 140 manufactures the first bent metal material layer (e.g., conductive path 731) and the second bent metal material layer (e.g., conductive path 732) as part of a second open material ring concentrically arranged relative to an open cylinder including conductive path 721 (the first half of the open cylinder) and conductive path 722 (the second half of the open cylinder).

[0181] In this example embodiment, peak flux is reduced while utilizing most of the core region. However, in a non-limiting example embodiment, the resulting per-phase inductance becomes very low, with a per-phase inductance of 13 nH and a coupling coefficient of 0.73.

[0182] Figure 8A This is an example top view of an inductor device according to embodiments described herein.

[0183] The embodiments described herein may include analyzing magnetic flux density. Based on Ampere's law, it is possible to... Figure 8A The inductor device finds the following equation:

[0184]

[0185]

[0186]

[0187]

[0188] Where α defines an inequality factor describing the decrease in the B-field with the core cross-section; where I1 is the current through A1 (a conductive path made of a metal such as copper); I2 is the current through A2 (a conductive path made of a metal such as copper); and μ is the permeability of the core material 120. Furthermore, to derive the current in each copper segment, the total phase current is distributed according to the copper area relative to the total copper area:

[0189]

[0190]

[0191] Where Atot is the total area of ​​area A1 (associated with conductive path 831) and area A2 (associated with conductive path 832), and the current can be expressed as a function of the radius. In the next step, the equation can be solved to find the radius.

[0192] This design logic can be further used to increase the inductance to the desired value. This can be achieved by adjusting the thickness of the toroidal conductive path, increasing the number of loops in the conductive path, etc.

[0193] Figure 8B This illustrates an embodiment according to the present document. Figure 8A An example diagram of magnetic flux density in an inductor device.

[0194] Graph 850 shows the magnetic flux density through the cross-section 850 of the inductor device 110-6. As shown in graph 860, the magnetic flux density of the inductor device 110-6 peaks near the radius r1i and gradually tapers between r1i and r1o. The magnetic flux density of the inductor device 110-6 peaks near the radius r2i and gradually tapers between r2i and r2o.

[0195] Figure 9A This is an example diagram illustrating an arcuate conductive path (inductive path) arranged in an inductor device according to embodiments herein.

[0196] Inductor device 110-7 is an improved design in which the inductance per phase is 35 nH, and the magnetic flux density is equal (<400 mT) for each conductive path. The core space in the center 310 between the dividing circles (conductive paths 941 and 942) is completely flux-free, and the magnetic flux density in the core region between the rings (e.g., conductive paths 921, 922, 923, and 924) is significantly reduced. In this example embodiment, the magnetic coupling coefficient between the conductive paths is 0.74.

[0197] Therefore, additional embodiments herein include fabricating one or more conductive paths of the core 120 (e.g., conductive paths 941 and 942) into a cylindrical or semi-cylindrical shape. The core 120 encapsulates these conductive paths.

[0198] Therefore, in this embodiment, the manufacturer 140 manufactures the inductor device 110-7 to include a first set of conductive paths 921 and 922 arranged to form a first discontinuous loop; each conductive path of the first set of conductive paths 921 and 922 extends from a first axial end of the inductor device 110-7 to a second axial end of the inductor device 110-7.

[0199] The fabricator 140 further manufactures the inductor device 110-7 to include a second set of conductive paths 931 and 932 arranged in a second discontinuous ring around the center 310. In a manner similar to that discussed earlier, each conductive path of the second set of conductive paths 931 and 932 extends from a first axial end of the inductor device 110-7 to a second axial end of the inductor device 110-7. In one embodiment, the first discontinuous ring of conductive paths 921 and 922 is concentric with respect to the second discontinuous ring of conductive paths 931 and 932. Each conductive path of conductive paths 941 and 942 is semi-cylindrical.

[0200] Figure 9B This illustrates an embodiment according to the present document. Figure 9A An example diagram of magnetic flux density in an inductor device.

[0201] As shown in graph 960, the magnitude of the magnetic flux density varies along the cross section 950 of the inductor device 110-7.

[0202] Figure 10A This is an example diagram illustrating an arcuate conductive path (inductive path) arranged in an inductor device according to embodiments herein.

[0203] exist Figure 9A The inductor device 110-7 in the middle can further reduce the peak magnetic flux and reduce, for example, Figure 10A The coupling factor is further improved as shown. This is achieved by cutting the conductive paths into open loops (arc conductive paths 1021, 1022, 1031, and 1032). Through inductor device 110-8, the peak magnetic flux is further reduced to below 340 mT, while maintaining a similar per-phase inductance value of 32 nH (as previously discussed with respect to inductor device 110-7), and the interphase coupling factor of inductor device 110-8 is also reduced to 0.57.

[0204] Therefore, in this example embodiment, the manufacturer 140 manufactures the inductor device 110-8 to include a first set of conductive paths 1021 and 1022 arranged in the inductor device 110-8 to form a first discontinuous loop (open loop); each conductive path of the conductive paths 1021, 1022 in the first set extends from a first end 141 of the inductor device 110-8 to a second end 142 of the inductor device 110-8.

[0205] Additionally, the fabricator 140 fabricates the inductor device 110-8 to include a second set of conductive paths 1031 and 1032 arranged in the inductor device 110-8 to form a second discontinuous ring (open ring) concentric with the first ring (conductive paths 1021 and 1022); each conductive path of the conductive paths 1031 and 1032 in the second set extends from the first axial end (141) of the inductor device 110-8 to the second axial end (142) of the inductor device 110-8.

[0206] In one embodiment, the first discontinuous loop of conductive paths 1021 and 1022 is concentric with respect to the second discontinuous loop of conductive paths 1031 and 1032.

[0207] The fabricator 140 further fabricates the inductor device 110-8 to include conductive paths 1041 and 1042. Each conductive path 1041 and 1042 extends from a first end 141 of the inductor device 110-8 to a second end 142 of the inductor device 110-8.

[0208] Figure 10B This illustrates an embodiment according to the present document. Figure 10A An example diagram of magnetic flux density in an inductor device.

[0209] As shown in graph 1060, the magnitude of the magnetic flux density varies along the cross section 1050 of the inductor device 110-8.

[0210] Figure 11 This is an example diagram illustrating multiple conductive paths and corresponding magnetically coupled logical and / or physical connections according to embodiments herein.

[0211] In this example embodiment, based on the implementation of inductor device 110-8, each conductive path of conductive paths 1021, 1031, and 1041 is connected in parallel to create a single equivalent inductor La. Each conductive path of conductive paths 1022, 1032, and 1042 is connected in parallel to produce a single equivalent inductor Lb. The output terminal (second terminal 142) associated with inductors La and Lb is electrically connected.

[0212] The connection of one or more conductive paths can be achieved in any suitable manner. For example, the ends of the conductive paths in inductor device 110 can be made of wires, traces, metal sheets, etc.

[0213] Figure 12 This is an example diagram illustrating the connection of circuit components in a power supply according to embodiments herein.

[0214] In this non-limiting example embodiment, the power supply 1200 includes a controller 1240 and a plurality of phases 221 and 222 that collectively generate a corresponding output voltage 123 (output current) to the electrical load 118. The load 118 can be any suitable circuit that can be located on a separate circuit board, such as a CPU (Central Processing Unit), GPU, and ASIC (e.g., including one or more artificial intelligence accelerators).

[0215] Note that power supply 1200 may include any number of phases. If necessary, the phases can be separated so that the first phase 221 supplies power to the first load, independent of the second phase supplying power to the second load.

[0216] As shown in an example embodiment where a combination of phases 221 and 222 is operated to power the same load 118, phase 221 includes switches QA1 and QB1 and an inductive path 1231. Phase 222 includes switches QA2 and QB2 and an inductive path 1232.

[0217] Furthermore, in this example embodiment, voltage source 120-1 provides voltage V1 (e.g., 6VDC or any suitable voltage) to a series combination of switch QA1 (e.g., high-voltage side switch) and switch QB1 (e.g., low-voltage side switch).

[0218] In one embodiment, the combination of switches QA1 and QB1 and inductive path 1231 (conductive path) operates according to a buck converter topology to generate output voltage 123.

[0219] Further, in this example embodiment, note that the drain node (D) of switch QA1 is connected to receive voltage V1 provided by voltage source 120-1. The source node (S) of switch QA1 is coupled to the drain node (D) of switch QB1 and the input node of inductive path 1231. The source node of switch QB1 is coupled to ground. The output node of inductive path 1231 is coupled to load 118.

[0220] Additionally, in this example embodiment, the drain node of switch QA2 in phase 222 is connected to receive voltage V1 provided by voltage source 120-1. The source node (S) of switch QA2 is coupled to the drain node (D) of switch QB2 and the input node of inductive path 1232. The source node of switch QB2 is coupled to ground. The output node of inductive path 1232 is coupled to load 118.

[0221] As previously stated, the combination of phases 221 and 222 produces an output voltage 123 that supplies power to load 118. That is, inductive path 1231 produces output voltage 123; inductive path 1232 produces output voltage 123.

[0222] As shown in the figure, during operation, the controller 1240 generates control signals 105 (e.g., control signals A1 and B1) to control the states of the corresponding switches QA1 and QB1. For example, control signal A1 generated by the controller 1240 drives and controls the gate node of switch QA1; control signal B1 generated by the controller 1240 drives and controls the gate node of switch QB1.

[0223] Additionally, the controller 1240 generates control signals A2 and B2 to control the states of switches QA2 and QB2. For example, control signal A2 generated by the controller 1240 drives and controls the gate node of switch QA2; control signal B2 generated by the controller 1240 drives and controls the gate node of switch QB2.

[0224] In one embodiment, controller 1240 controls phases 221 and 222 to be 180 degrees out of phase with respect to each other.

[0225] As is known in buck converters, in phase 221, activating the high-side switch QA1 to the ON state while switch QB1 is deactivated (OFF) couples the input voltage V1 to the input of inductive path 1231, resulting in an increase in the current supplied to the load 118 by inductive path 1231. Conversely, activating the low-side switch QB1 to the ON state while switch QA1 is deactivated (OFF) couples the ground reference voltage to the input of inductive path 1231, resulting in a decrease in the current supplied to the load 118 by inductive path 1231. Controller 1240 monitors the amplitude of output voltage 123 and controls switches QA1 and QB1 to maintain output voltage 123 within the desired voltage range.

[0226] In stage 222, similarly, activating the high-side switch QA2 to the ON state while switch QB2 is deactivated (OFF) couples the input voltage V1 to the input of inductive path 1232, resulting in an increase in the amount of current supplied to the load 118 by conductive path 1232. Conversely, activating the low-side switch QB2 to the ON state while switch QA2 is deactivated (OFF) couples the ground reference voltage to the input of inductive path 1232, resulting in a decrease in the amount of current supplied to the load 118 by inductive path 1232. Controller 1240 monitors the magnitude of the output voltage 123 and controls switches QA2 and QB2 to maintain the output voltage 123 within the desired voltage range.

[0227] Figure 13 This illustrates an instantiation in a vertical stack according to embodiments described herein. Figure 12 An example side view of a multiphase power supply.

[0228] In this example embodiment, power supply 1200 supports vertical power flow. For example, substrate 1205 and one or more corresponding power supplies (e.g., V1) supply power to power stack assembly 1300, which in turn supplies power to dynamic load 118. A ground reference (GND) delivered through power stack assembly 1300 provides a reference voltage and a return path for transferring current to load 118 through the stack.

[0229] In one embodiment, substrate 1205 is a circuit board (such as a standalone board, a motherboard, a standalone board designed to couple to a motherboard, etc.). A power stack assembly 1300 including one or more inductor devices is coupled to substrate 1205. As described above, load 118 can be any suitable circuit that can be located on a standalone circuit board, such as a CPU (Central Processing Unit), GPU, and ASIC (such as including one or more artificial intelligence accelerators).

[0230] Note that the inductor device 110 in the power stack assembly 1300 can be instantiated in any suitable manner as described herein. In this non-limiting example embodiment, the power stack assembly 1300 includes Figure 1A The inductor device 110 is included. The power supply stack assembly 1300 can be configured to include any inductor device 110 as described herein.

[0231] Furthermore, in this example embodiment, the manufacturer 140 manufactures a power stack assembly 1300 (e.g., a DC-DC power converter) by stacking multiple components, including a first power interface 1301, one or more switches in a switch layer 1310, a connection layer 1320, one or more inductor assemblies (e.g., including inductor device 110) and a second power interface 1302.

[0232] The fabricator 140 also arranges a first power interface 1301 at the base of the stack (the power assembly 1300 of the component). The base of the power assembly 1300 (e.g., the power interface 1301) couples the power assembly 1300 to the substrate 1205.

[0233] In one embodiment, the fabricator 140 arranges capacitors 1221 and 1222 in a layer of the power stack assembly 1300 that includes a power interface 1301.

[0234] Furthermore, when manufacturing the power stack assembly 1300, the manufacturer 140 electrically couples multiple switches (such as switches QA1, QB1, QA2, and QB2) in the power stack assembly 1300 to a first power interface 1301. The first power interface 1301 and its corresponding connection to the substrate 1205 enable switches QA1, QB1, QA2, and QB2 to receive power (e.g., power input), such as input voltage V1 and GND reference voltage, from the substrate 1205. One or more traces, power layers, etc., on the substrate 1205 supply or deliver voltage from a voltage (or power) source to the power interface 1301 of the power stack assembly 1300.

[0235] As described above, controller 1240 generates control signals 105 for controlling corresponding switches QA1, QB1, QA2, and QB2 in the power supply stack assembly 1300. Manufacturer 140 provides a connection between controller 1240 and switches 12A, QB1, QB1, QA2, and QB2 in any suitable manner to transmit the corresponding signals 105.

[0236] Above the switches in the switching layer 1310, the manufacturer 140 further manufactures the power supply stack assembly 1300 to include one or more inductor devices described herein. Additionally, via the connection layer 1320, the manufacturer 140 also connects switches QA1, QB1, QA2, and QB2 to one or more inductor devices 110.

[0237] More specifically, in this example embodiment, the fabricator 140 connects the source node (S) of switch QB1 to a ground reference node 1210-1 in the power interface 1301. Note that the ground reference node 1210-1 extends from the substrate 1205 via an L-shaped ground node 1210-1 (which is connected to a ground reference voltage) to the dynamic load 118. The fabricator 140 connects the drain node (D) of switch QB1 to node 1321 (e.g., made of metal), which is electrically connected to the first end 141 of the inductive path 1231 (e.g., an instantiation of the conductive path 131). Thus, the fabricator connects the drain node of switch QB1 to the inductive path 1231 of the inductor device 110 via the connection layer 1320.

[0238] Fabricator 140 connects the drain node (D) of switch QA1 to the voltage source node 1220 of the first power interface 1301 (which is electrically connected to the input voltage V1). Fabricator 140 connects the source node (S) of switch QA1 to node 1321, which is electrically connected to the first end 141 of the inductive path 1231 (an instantiation of conductive path 131) as previously described. Thus, via connection layer 1320 and corresponding node 1321, the source node of switch QA1 is connected to the inductive path 1231 of inductor device 110.

[0239] As further shown in the figure, the fabricator 140 connects the source node (S) of switch QB2 to a ground reference node 1210-2 in the power interface 1301. The ground reference node 1210-2 extends from the substrate 1205 via an L-shaped ground reference node 1210-2 (connected to a ground reference voltage) to the dynamic load 118. The fabricator 140 connects the drain node (D) of switch QB2 to node 1322 (e.g., made of metal), which is electrically connected to the first end 141 of the inductive path 1232 (e.g., an instantiation of conductive path 132). Thus, via the connection layer 1320, the drain node of switch QB2 is connected to the inductive path 1232 of the inductor device 110.

[0240] Note that although each of nodes 1210-1 and 1210-2 appears to be L-shaped when viewed from the side view of the power stack assembly 1300, in one embodiment, node 1210 extends circumferentially around the outer surface of the power stack assembly 1300 (in a manner similar to the conductive path 133 discussed earlier).

[0241] As further shown in the figure, the fabricator 140 connects the drain node (D) of switch QA2 to the voltage source node 1220 (which is connected to voltage V1) in the power interface 1301. The fabricator 140 connects the source node (S) of switch QA2 to node 1322, which is electrically connected to the first axial end 141 of the inductive path 1232 (an instantiation of the conductive path 132). Thus, via the connection layer 1320 and the corresponding node 1322, the source node of switch QA2 is connected to the inductive path 1232 of the inductor device 110.

[0242] Therefore, the manufacturer 140 arranges one or more switches (such as QA1, QB1, QA2, and QB2) between the first power interface 1301 in the power stack assembly 1300 and the inductor device 110.

[0243] In a non-limiting example embodiment, each of one or more switches QA1, QB1, QA2, and QB2 in the power stack assembly 1300 is a vertical field-effect transistor (FET) arranged between the first power interface 1301 and the inductor device 110. However, alternatively, it should be noted that one or more switches QA1, QB1, QA2, and QB2 can be any suitable type of switch, such as vertical or lateral FETs, bipolar junction transistors (BJTs), etc. Lateral FETs are also possible; however, vertical FETs are ideal for this concept due to the use of a flip-chip approach to minimize current loops.

[0244] As described above, the manufacturer 140 manufactures the power stack assembly 1300 to include one or more inductor devices 110. In this example embodiment, the manufacturer arranges multiple inductive paths 1231 between multiple switches QA1, QB1, QA2, and QB2 in the power stack assembly 1300 and the second power interface 1302.

[0245] According to an additional embodiment, note that the fabrication of the plurality of inductive paths 1231 and 1232 includes: fabricating the plurality of inductive paths as a first inductive path 1231 and a second inductive path 1232 extending through the core material 120 of the inductor device 110 between the connection layer 1320 and the power interface 1302. In one embodiment, the fabricator 140 fabricates the inductor device 110 as including: i) a core material 120, the core material being a magnetically conductive ferromagnetic material; ii) a first inductive path 1231 extending from a first axial end 141 of the inductor device 110 through the core material 120 to a second axial end 142 of the inductor device 110; and iii) a second inductive path 1232 extending from the first axial end 141 of the inductor device 110 through the core material 120 to the second axial end 142 of the inductor device 110.

[0246] Additionally, in this example embodiment, the first inductive path 1231 is arranged in the first phase 221 of the power supply stack assembly 1300 (power converter circuit). Figure 12 In the second inductive path 1232, the second phase 222 of the power supply stack assembly 1300 (power converter circuit) is arranged. Figure 12 In the power converter (power stack assembly 1300), during operation, the combination of the first phase 221 and the second phase 222 arranged in parallel produces the output voltage 123. If desired, the controller 1240 can also be manufactured as the power stack assembly 1300.

[0247] In one embodiment, each of the one or more inductive paths 1231 and 1232 is a corresponding non-winding path extending from a first layer (e.g., switch layer 1310) of a stack comprising a plurality of switches QA1, QB1, QA2 and QB2 to a second layer of the stack comprising a second power interface 1302.

[0248] Note that additional embodiments herein include multiple inductive paths in inductor device 110 connected in parallel to reduce the inductance of each inductor path. As described herein, any number of inductive paths in inductor device 110 can be connected in parallel to provide a desired total inductance. Therefore, in addition to controlling parameters such as the permeability of core material 120 and the respective length (between the first end 141 and the second end 142) of each non-winding conductive path (such as a straight or direct path) in inductor device 110, embodiments herein also include multiple inductive paths connected in parallel to control the size of the inductance provided by each inductor device 110.

[0249] As further shown, the manufacturer 140 arranges the inductor device 110 in the power stack assembly 1200 between a plurality of switches (QA1, QB1, QA2 and QB2) in the switch layer 1310 and the second power interface 1302.

[0250] More specifically, the manufacturer 140 manufactures the power assembly 1300 to include a second power interface 1302. In one embodiment, the manufacturer 140 connects the output axial end and corresponding node of the inductor device 110 to the second power interface 1302. The second power interface 1302 is operable to receive the output voltage 123 generated by the inductor device 110 and output it to the load 118. The manufacturer 140 couples both the output nodes of inductive paths 1231 and 1232 to the output voltage node 1331 (e.g., a material layer such as metal). Thus, the output voltage node 1331 is electrically connected to the outputs of the respective inductive paths 1231 and 1232.

[0251] In one embodiment, one or more nodes or pins, pads, etc. of the dynamic load 118 are coupled to the output voltage node 1331. For example, the output voltage node 1331 of the power stack assembly 1200 delivers the output voltage 123 generated by each inductive path 1231 and 1232 to one or more nodes, pins, pads, etc. of the load 118.

[0252] Therefore, by switching the inductive path between the ground voltage and the input voltage V1, the combination of inductive paths 1231 and 1232 together generates the output voltage 123 to power the load 118.

[0253] As described above, the power stack assembly 1300 also includes ground nodes 1210-1 and 1210-2 (such as an instantiation of a third conductive path 133). In one embodiment, the instantiation of the conductive path 133 of the inductor device 110 (e.g., ground nodes 1210-1, 1210-2, etc.) provides perimeter electromagnetic shielding relative to the power stack assembly 1300, thereby preventing or reducing corresponding radiated emissions into the surrounding environment.

[0254] In some other embodiments, the manufacturer 140 manufactures the first power interface 1301 to include a first contact element operable to connect the first power interface 1301 at the base of the power stack assembly 1300 to the host substrate 1205. The manufacturer manufactures the second power interface 1302 to include a second contact element operable to secure a dynamic load 118 to the power stack assembly 1300.

[0255] Note that the power stack assembly 1200 is manufactured to also include first capacitors 1221, 1222, etc., to provide a connection between the input voltage node 1220 (a first conductive path that provides the input voltage V1 to the power stack assembly 1300) and the ground nodes 1210-1 and 1210-2 (e.g., a second conductive path that provides the ground reference voltage to the power stack assembly 1300).

[0256] The fabricator 140 further arranges an output voltage node 1331 (e.g., another conductive path) in a layer of the power stack assembly 1302 that includes the second power interface 1302. As described above, the output voltage node 1331 (e.g., a metal layer) is operable to deliver an output voltage 123 to the dynamic load 118.

[0257] According to an additional embodiment, the manufacturer 140 manufactures the power supply stack assembly 1300 to include a second capacitor (1391, 1392, etc.) connected between the output voltage node 1331 and the corresponding ground node 1210. More specifically, capacitor 1391 is coupled between the output voltage node 1331 and the ground node 1210-1; capacitor 1392 is coupled between the output voltage node 1331 and the ground node 1210-2.

[0258] As described above, node 1210 may be a continuous perimeter shield surrounding inductor device 110 and / or power stack assembly 1300.

[0259] Additional embodiments described herein include securing a dynamic load 118 to a second power interface 1302. Thus, the dynamic load 118 is secured to the power stack assembly 1300.

[0260] The power stack assembly 1300 (an assembly of components, such as a vertical stack) described herein offers advantages over conventional power converters. For example, the power stack assembly 1300 described herein provides novel connections (such as via the stack) for components in the assembly, resulting in shorter circuit paths and lower losses when converting power and delivering it to the dynamic load 118.

[0261] As previously mentioned Figure 12 During operation, the inductor device 110 and its corresponding inductive paths 1231 and 1232 are operable to generate an output voltage 123 based on the received power (current supplied by the input voltage V1). In other words, the power supply stack assembly 1300 and the corresponding manufactured component stack (e.g., the first power interface 1301, one or more switches QA1, QB1, QA2 and QB2, the inductor device 110, and the second power interface 1302) are power converters operable to convert the input voltage V1 (e.g., DC voltage) received at the first power interface 1301 into an output voltage 123 (e.g., DC voltage) output from the second power interface 1302 to the dynamic load 118.

[0262] Additional embodiments described herein include the fabrication of a system. For example, embodiments herein include a fabricator 140. The fabricator 140 receives a substrate 1205, such as a circuit board; the fabricator 140 attaches the base (e.g., interface 1301) of a component stack (e.g., power stack assembly 1300) to the circuit board. As described above, the component stack (power stack assembly 1300) is operable to generate an output voltage 123 to power a load 118. The load 118 is attached to the circuit board, or the load 118 is attached to the power stack assembly 1300.

[0263] Furthermore, as previously mentioned, load 118 can be any suitable circuit that can be located on a separate circuit board, such as a CPU (Central Processing Unit), GPU, and ASIC (such as including one or more artificial intelligence accelerators).

[0264] Figure 14 This is an example diagram illustrating the connection of circuit components in a power supply according to embodiments herein.

[0265] In this example embodiment, the switching power supply phase 221 includes switch QA1, switch QB1, and inductive path 151. Voltage source 120-1 supplies voltage V1 (e.g., 6VDC or any suitable voltage) to the series combination of switch QA1 (e.g., high-side switch) and switch QB1 (e.g., low-side switch).

[0266] In one embodiment, the combination of switches QA1 and QB1 and inductive path 1431 (conductive path) is a buck converter.

[0267] As further illustrated in this example embodiment, the drain node of switch QA1 is connected to receive voltage V1 supplied by voltage source 120-1. The source node (S) of switch QA1 is coupled to the drain node (D) of switch QB1 and the input node of inductive path 1431. The source node (S) of switch QB1 is coupled to ground. The output node of the inductive path is coupled to load 118.

[0268] During operation, controller 1440 generates control signals 111 (e.g., control signal A1 and control signal B1) for controlling the states of switches QA1 and QB1. For example, control signal A1 generated by controller 1440 drives and controls the gate node (G) of switch QA1; control signal B1 generated by controller 140 drives and controls the gate node (G) of switch QB1.

[0269] Furthermore, in this example embodiment, the ramp booster 122-1 (circuit) includes switches such as Q1, Q2, Q3, and Q4 configured as a full-bridge circuit.

[0270] Voltage source 120-2 supplies voltage V2 (e.g., 12VDC or any suitable voltage) to a full-bridge arrangement of switches Q1, Q2, Q3, and Q4. A first series combination of switches Q1 and Q2 is arranged in parallel with a second series combination of switches Q3 and Q4.

[0271] The drain node (D) of switch Q1 is connected to receive voltage V2 supplied by voltage source 120-2. The source node (S) of switch Q1 is coupled to the drain node (D) of switch Q2 and the input node of the inductor device (such as conductive path 1432) (Ls). The source node (S) of switch Q2 is coupled to...

[0272] As further shown in the figure, the drain node (D) of switch Q3 is connected to receive voltage V2 supplied by voltage source 120-2. The source node (S) of switch Q3 is coupled to the drain node (D) of switch Q4 and the output node Ls of winding 152. The source node (S) of switch Q4 is coupled to ground.

[0273] During operation, controller 1440 generates control signals 111 (such as control signals SIG1, SIG2, SIG3, and SIG4). Control signal SIG1 controls the gate (G) of switch Q1; control signal SIG2 controls the gate (G) of switch Q2; control signal SIG3 controls the gate (G) of switch Q3; and control signal SIG4 controls the gate (G) of switch Q4. A logic high voltage applied to the corresponding gate turns the corresponding switch on (a low-resistance path between the drain and source nodes). A logic low voltage applied to the corresponding gate turns the corresponding switch off (preventing current from flowing through the corresponding switch).

[0274] In this example embodiment, as previously described, circuit 122-1 (e.g., a ramp booster) is a full-bridge arrangement (e.g., a bridge configuration of switches Q1, Q2, Q3, and Q4) for both positive and negative di / dt (ramp and ramp-down) and (as further discussed herein) for modulation of the current through inductive path 151.

[0275] In one embodiment, when a rapid change (positive or negative) in the current must be supplied to the load 118 via the inductive path 1431 in order to maintain the amplitude of the output voltage 123 within the regulation range, the controller 1240 can be configured to activate a pair of switches in the ramp-up circuit 122-1 to supply an appropriate amount of current to the dynamic load 118.

[0276] More specifically, in order to boost the output current supplied to the dynamic load 118 to supplement the current available from the inductive path 1431, the controller 1440: i) activates QA1 and deactivates switch QB1; ii) activates switches Q1 and Q4 and deactivates switches Q2 and Q3. The current 152 through the inductive path 1432 generates magnetic flux (magnetic energy), which couples to the inductive path 1431, thereby increasing the output current supplied to the load 118 by the inductive path 1431.

[0277] Conversely, to provide a rapid reduction in the output current supplied to the dynamic load 118, controller 1440: i) deactivates switch QA1 and activates switch QB1; ii) deactivates switches Q1 and Q4 and activates switches Q2 and Q3. The (negative) current 152 through inductive path 1432 causes the generation of magnetic flux (magnetic energy) coupled to inductive path 1431, thereby reducing the corresponding output current supplied to load 118 from inductive path 1431. In other words, controller 1440 controls the switches in ramp-up transformer 122-1 to reduce the output current from inductive path 1431 to load 118.

[0278] It should also be noted that the embodiments described herein include manufacturing the power supply 1400 as a power supply stack assembly (such as...). Figure 15 (As shown) includes multiple inductive paths, including a first inductive path 1431 and a second inductive path 1432: the first inductive path 1431 is arranged in a phase of the power converter, and the second inductive path 1432 is magnetically coupled to the first inductive path 1431 to apply magnetic energy regulation to the first inductive path 1431 (providing voltage / current output boost and buck capabilities). In this configuration, the combination of phase 221 and the input from the second inductive path 1432 (e.g., magnetic energy regulation, positive or negative) is operable to generate and maintain the regulation of the output voltage 123 within a desired range.

[0279] Figure 15 This illustrates support for vertical power flow according to embodiments described herein. Figure 14 Example side view of the power supply.

[0280] In this example embodiment, the power stack assembly 1500 (associated with power supply 1400) supports vertical power flow. For example, the substrate 1205 and one or more corresponding power supplies (e.g., V1 (voltage source 120-1) and V2 (voltage source 120-2)) supply power to the power stack assembly 1500, which in turn supplies power to the dynamic load 118.

[0281] The ground reference (GND) transmitted or coupled through the power stack assembly 1500 provides a reference voltage and return path for the current delivered to the load 118 through the power stack assembly 1500.

[0282] Note that the inductor device 110 in the power stack assembly 1500 can be instantiated in any suitable manner as described herein. In this non-limiting example embodiment, the power stack assembly 1500 includes Figure 10A The inductor device 110-8 in the middle.

[0283] Furthermore, in this example embodiment, the manufacturer 140 manufactures a power stack assembly 1500 (e.g., a DC-DC power converter) by stacking multiple components, including: a first power interface 1501, one or more switches in a switch layer 1510, a connection layer 1520, one or more inductor assemblies (e.g., including inductor devices 110-8), and a second power interface 1502.

[0284] The fabricator 140 also arranges a first power interface 1501 at the base of the stack (the power stack assembly 1500 of the component). The base of the power stack assembly 1500 (e.g., the power interface 1501) couples the power stack assembly 1500 to the substrate 1205.

[0285] In one embodiment, the fabricator 140 arranges a capacitor 1221 in a layer of the power stack assembly 1500 that includes a power interface 1501. The capacitor 1221 is arranged between a voltage V1 (1220) and a ground reference 1210-1.

[0286] Furthermore, when manufacturing the power stack assembly 1500, the manufacturer 140 electrically couples multiple switches (such as switches QA1, QB1, Q1, Q2, Q3, and Q4) in the power stack assembly 1500 to the first power interface 1501.

[0287] The first power interface 1501 and its corresponding connection to the substrate 1205 enable switches QA1, QB1, Q1, Q2, Q3, and Q4 to receive power from the substrate 1205 via input voltages V1, V2, and the GND reference voltage. One or more traces, power layers, etc., on the substrate 1205 supply or deliver voltage from a voltage (or power) source to the power interface 1501 of the power stack assembly 1500.

[0288] As described above, controller 1240 generates control signals 105 for controlling corresponding switches QA1, QB1, Q1, Q2, Q3, and Q4 in the power supply stack assembly 1500. Manufacturer 140 provides a connection between controller 1240 and switches QA1, QB1, Q1, Q2, Q3, and Q4 in any suitable manner to transmit the corresponding signals 105.

[0289] As further shown, above switches QA1, QB1, Q1, Q2, Q3, and Q4 in switch layer 1510, manufacturer 140 further manufactures power stack assembly 1500 to include one or more inductor devices (such as any instantiation of inductor device 110) as described herein. Additionally, via connection layer 1520, manufacturer 140 also connects switches QA1, QB1, Q1, Q2, Q3, and Q4 to one or more inductor devices 110.

[0290] More specifically, in this example embodiment, the manufacturer 140 connects the source node (S) of switch QB1 to the ground reference node 1210-1 in the power interface 1501.

[0291] Note that ground reference node 1210-1 extends from substrate 1205 via an L-shaped (side view) ground node 1210-1 (which is connected to the ground voltage reference) to dynamic load 118. Fabricator 140 connects the drain node (D) of switch QB1 to node 1521 (e.g., made of metal), which is electrically connected to inductive paths 1431-3, 1431-2, and 1431-3 (generally represented via parallel connections). Figure 14 The first end 141 of the inductive path 1431 in the middle.

[0292] Therefore, via the connection layer 1520 and the corresponding node 1521, the manufacturer 140 connects the drain node of the switch QB1 to the inductive path 1431 of the inductor device 110-8 (the parallel inductive paths 1431-1, 1431-2 and 1431-3).

[0293] The manufacturer 140 additionally connects the drain node (D) of switch QA1 to the voltage source node 1220 of the first power interface 1501 (which is electrically connected to the input voltage V1). The manufacturer 140 connects the source node (S) of switch QA1 to node 1521, as previously described, node 1521 being electrically connected to the first axial end 141 of the inductive path 1431 (a parallel combination of inductive paths 1431-3, 1431-2, and 1431-3).

[0294] Therefore, via the connection layer 1520 and the corresponding node 1521, the source node of switch QA1 is also connected to the inductive path 1431 of inductor device 110.

[0295] As further shown in the figure, the fabricator 140 connects the drain node (D) of switch Q1 to node 1519 (e.g., made of metal), which is electrically connected to voltage source V2. The fabricator 140 connects the source node (S) of switch Q1 to node 1522 (metal or conductive path) in the connection layer 1520.

[0296] Fabricator 140 connects the source node (S) of switch Q2 to node 1210-2 (e.g., made of metal), which is electrically connected to a ground reference voltage. Fabricator 140 connects the drain node (D) of switch Q2 to node 1522 (metal or conductive path) in connection layer 1520.

[0297] Therefore, via the connection layer 1520 and the corresponding node 1522, the manufacturer 140 connects the source node of switch Q1 and the drain node of switch Q2 to the inductive path 1432 of the inductor device 110-8 (parallel connection of inductive paths 1432-1, 1432-2 and 1432-3).

[0298] Fabricator 140 connects the drain node (D) of switch Q3 to node 1519 (e.g., made of metal), which is electrically connected to voltage source V2. Fabricator 140 connects the source node (S) of switch Q3 to node 1532 (metal or conductive path) extending from layer 1502 to connection layer 1520.

[0299] Fabricator 140 connects the source node (S) of switch Q4 to node 1210-3 (e.g., made of metal), which is electrically connected to a ground reference voltage. Fabricator 140 connects the drain node (D) of switch Q4 to node 1532 (metal or conductive path) extending from layer 1502 to connection layer 1520.

[0300] Therefore, via the connection layer 1520 and the corresponding node 1532, the manufacturer 140 connects the source node of switch Q3 and the drain node of switch Q4 to the axial end 142 of the inductive path 1432 of the inductor device 110-8 (parallel connection of inductive paths 1432-1, 1432-2 and 1432-3).

[0301] As further shown in the figure, ground reference node 1210-3 extends from substrate 1205 via L-shaped (side view) ground reference node 1210-2 (which is connected to ground voltage reference) to dynamic load 118.

[0302] Note again that although each of nodes 1210-1 and 1210-3 appears to be L-shaped when viewed from the side view of the power stack assembly 1300, in one embodiment, node 1210 extends circumferentially around the outer surface of the power stack assembly 1500 as a single node (in a similar manner to conductive path 133).

[0303] Therefore, the manufacturer 140 arranges one or more switches (e.g., QA1, QB1, Q1, Q2, Q3, and Q4) between the first power interface 1301 in the power switch assembly 1500 and the inductor device 110.

[0304] In a non-limiting example embodiment, each of one or more switches QA1, QB1, Q1, Q2, Q3, and Q4 in the power stack assembly 1500 is a vertical field-effect transistor arranged between the first power interface 1501 and the inductor device 110-8. However, it is noted that one or more of the switches QA1, QB1, Q1, Q2, Q3, and Q4 can be any suitable type of switch, such as a horizontal field-effect transistor, a bipolar junction transistor, etc.

[0305] As described above, the manufacturer 140 manufactures the power stack assembly 1500 to include one or more inductor devices 110. In this example embodiment, the manufacturer 140 arranges multiple inductive paths 1431 in the power stack assembly 1500 between multiple switches QA1, QB1, Q1, Q2, Q3, and Q4 and the second power interface 1502.

[0306] Additionally, in this example embodiment, the first inductive path 1431 (a parallel combination of 1431-1, 1431-2, and 1431-3) is arranged in the first phase 221 of the power supply stack-up assembly 1500 (power converter circuit). Figure 14 The second inductive path 1432 is arranged in the boost circuit 122-1 of the power supply stack-up assembly 1500 (power converter circuit). Figure 14 In the power converter (power stack assembly 1500), the combination of phase 221 and boost circuit 222 produces output voltage 123.

[0307] Note that, if desired, the controller 1440 can also be manufactured into the power supply stack assembly 1500.

[0308] In one embodiment, each of the one or more inductive paths 1431 and 1432 is a corresponding non-winding path extending from a first layer (such as switch layer 1510) in the power stack assembly 1500, which includes a plurality of switches QA1, QB1, Q1, Q2, Q3 and Q4, to a second layer in the power stack assembly 1500, which includes a second power interface 1502.

[0309] Note that additional embodiments described herein include multiple inductive paths 1431-1, 1432-3, and 1431-3 connected in parallel in inductor device 110-8 to reduce the inductance of the respective inductive paths. As described herein, any number of inductive paths in inductor device 110 may be connected in parallel to provide the desired total inductance.

[0310] Therefore, in addition to controlling parameters such as the permeability of the core material 120 associated with inductor devices 110-8, and the corresponding length of each non-winding conductive path (such as a straight, axial, or direct path) in inductor device 110 (between the first axial end 141 and the second axial end 142), embodiments herein also include connecting multiple inductive paths in parallel to control the magnitude of the inductance provided by the respective inductor device 110.

[0311] Manufacturer 140 produces power assembly 1500 including a second power interface 1502. In one embodiment, manufacturer 140 connects inductor devices 110-8 and corresponding nodes to the second power interface 1502. The second power interface 1502 (and corresponding node 1531) is operable to receive the output voltage 123 generated by the inductor devices 110 and output it to the load 118. Therefore, the output voltage node 1531 is electrically connected to the output of the corresponding inductive path 1431.

[0312] In one embodiment, one or more nodes or pins, pads, etc. of the dynamic load 118 are coupled to the output voltage node 1531. For example, the output voltage node 1531 of the power stack assembly 1500 delivers the output voltage 123 generated by each inductive path of the inductive path 1431 to one or more nodes, pins, pads, etc. of the load 118.

[0313] Therefore, by switching the inductive path 1431 between the ground voltage and the input voltage V1, the combination of inductive paths 1431-1, 1431-2 and 1431-3 together generates the output voltage 123 to power the load 118 through node 1531.

[0314] In some other embodiments, the manufacturer 140 manufactures the first power interface 1501 to include a first contact element operable to connect the first power interface 1501 at the base of the power stack assembly 1500 to the host substrate 1205. The manufacturer 140 manufactures the second power interface 1502 to include a second contact element operable to secure a dynamic load 118 to a node 1531 of the power stack assembly 1500.

[0315] Note that the power supply stack assembly 1500 is manufactured to also include one or more capacitors 1231 to provide a connection between the output voltage 123 and the ground reference voltage.

[0316] Additional embodiments described herein include securing a dynamic load 118 to a second power interface 1502. Thus, the dynamic load 118 is secured to the power stack assembly 1500.

[0317] As described herein, the power stack assembly 1500 (an assembly of components, such as a vertical stack) offers advantages over conventional power converters. For example, the power stack assembly 1500 described herein provides novel connections of components in the assembly (such as via the stack), resulting in shorter circuit paths and lower losses when converting power and delivering power to the dynamic load 118.

[0318] Figure 21 This is an example diagram illustrating a circuit assembly according to an embodiment described herein.

[0319] As shown in this example embodiment, circuit assembly 2100 includes power stack assembly 1300 or power stack assembly 1500 disposed in insert layer 2110. Insert layer 2110 provides circuit path connection between substrate 2190 and load substrate 2130 (and load 2120).

[0320] In the manner previously discussed, the power stack assembly (1300 or 1500) receives the input voltage (and any other reference voltage signals, such as ground and / or V1, V2, etc.) from the substrate 2190. The power stack assembly (1300 or 1500) converts the input voltage into an output voltage 123 (and / or output current), which powers the corresponding load 2120 and / or other circuit components arranged on the load user 2130.

[0321] In one embodiment, substrate 2190 is a printed circuit board (PCB) substrate; however, substrate 2190 can be any suitable component to which socket 2150 (optional) or insert layer 2110 is connected. Insert layer 2110 communicates with substrate 2190 via socket 2150. In the absence of socket 2150, insert layer 2110 is directly connected to substrate 2190.

[0322] Figure 22 This is an example diagram illustrating a circuit assembly according to an embodiment described herein.

[0323] As shown in this example embodiment, the circuit assembly 2200 includes a power stack assembly 1300 or a power stack assembly 1500 disposed in the CPU (Central Processing Unit) substrate 2210. In one embodiment, the power stack assembly is integrated into a laminated portion of the CPU substrate 2210 itself. The CPU substrate 2210 provides a circuit path connection between the substrate 2290 and the load 2220 (and other components connected to the CPU substrate load 2120).

[0324] In the manner previously discussed, the power supply stack assembly (1300 or 1500) receives an input voltage (and any other reference voltage signals, such as ground and / or voltages V1, V2, etc.) from the substrate 2290. The power supply stack assembly (1300 or 1500) converts the input voltage into an output voltage (and / or output current) that powers the corresponding load 2220 and / or other circuit components disposed on the load CPU substrate 2210.

[0325] In one embodiment, substrate 2290 is a printed circuit board (PCB) substrate; however, substrate 2290 can be any suitable component to which receptacle 2250 (optional) or CPU substrate 2210 is directly connected. CPU substrate 2210 and power stack assembly communicate with substrate 2290 via receptacle 2250. In the absence of receptacle 2250, CPU substrate 2210 is directly connected to substrate 2290.

[0326] Figure 23 This is an example diagram illustrating a circuit assembly according to an embodiment described herein.

[0327] As shown in this example embodiment, the circuit assembly 2300 includes a power stack assembly 1300 or a power stack assembly 1500 disposed in a substrate 2390 such as a circuit board (e.g., a printed circuit board).

[0328] In one embodiment, the power stack assembly is embedded or fabricated in an opening in the substrate 2390. In other words, in one embodiment, the power stack assembly 1300 or 1500 (converter unit) is fabricated (inserted) into an opening beneath the CPU substrate 2310. The CPU substrate 2310 provides a circuit path connection between the substrate 2390 and the load 2320 (and / or other components connected to the CPU substrate load 2310).

[0329] In the manner previously discussed, the power supply stack assembly (1300 or 1500) receives an input voltage (and any other reference voltage signals, such as ground and / or V1, V2, etc.) from the substrate 2390. The power supply stack assembly (1300 or 1500) converts the input voltage into an output voltage (and / or output current) that powers the corresponding load 2320 and / or other circuit components disposed on the load CPU substrate 2310.

[0330] In one embodiment, substrate 2390 is a printed circuit board (PCB) substrate; however, substrate 2390 can be any suitable component to which receptacle 2350 (optional) or CPU substrate 2310 is directly connected. In one embodiment, CPU substrate 2310 communicates with substrate 2390 via receptacle 2350. Without receptacle 2350, CPU substrate 2310 is directly connected to substrate 2390.

[0331] Figure 16 This is an example diagram illustrating the first-stage power converter circuit and the corresponding bypass circuit according to the embodiments herein.

[0332] In this example embodiment, the voltage converter 1605 (such as a switched energy storage converter or other suitable power converter circuit) derives the input voltage V12 based on the input voltage V11 (e.g., via a buck function). In one embodiment, the magnitude of the input voltage V11 is substantially greater than the voltage V12.

[0333] For example, as a non-limiting example embodiment, voltage V11 may be 6VDC, while input voltage V12 is 1.5VDC. In one embodiment, controller 1240 controls the switches in phases 221 and 222 to produce an output voltage 123 of 0.75VDC. Thus, in one embodiment, the intermediate bus voltage V12 (obtained from the power input) is a fixed amplitude that is approximately twice the amplitude of the output voltage 123.

[0334] In another embodiment, the multiphase buck converter (phases 221, 222, etc.) operates with a duty cycle of approximately 50%, which provides symmetrical behavior for changes in positive and negative loads. The impedance of the load path is minimized. Inductors L1 and L2 are essentially used as current sources for load 118. The output capacitor C1 at load point 118 can be reduced or eliminated entirely.

[0335] Alternatively, according to an additional embodiment, the power converter circuit 1605 (voltage divider) provides a voltage to the buck converter whose amplitude is close to that of the output voltage 123. In this case, the buck converter (phases 221, 222) operates with a duty cycle of approximately 80%, and can then ramp up the current very efficiently in power-boost mode. In this case, a ramp-up converter (as described herein) can help ramp up the positive current in a fast and efficient manner.

[0336] In an additional embodiment, the power converter circuit 1605 provides a voltage V2 to the buck converter at an amplitude close to the output voltage 123, wherein the buck converter operates with a duty cycle between 0.5 and 1 during normal operation. In power boost mode, the power converter circuit 1605 is bypassed via bypass circuit 1610. As discussed further below, the buck converter can operate directly from the intermediate bus voltage V11. In this case, a ramp-up function is not required.

[0337] More specifically, in one embodiment, power supply 1600 (power supply 1200 plus bypass circuit 1610) is operable to generate a corresponding output voltage 123 based on one of two voltages V11 or V12, depending on the load condition.

[0338] For example, during non-transient conditions, such as when load 118 consumes a relatively constant amount of current supplied by output voltage 123, controller 1240 generates control signal BP1 to deactivate switch Q7; and controller 1240 generates control signal BP2 to activate switch Q8. In this case, bypass circuit 1610 supplies voltage V12 to switches QA1 and QA2, during which phases 221 and 222 generate output voltages based on input voltage V12.

[0339] Conversely, during transient conditions, such as when load 118 suddenly consumes excessive current supplied by output voltage 123, controller 1240 generates control signal BP1 to activate switch Q7; controller 1240 generates control signal BP2 to deactivate switch Q8. In this case, bypass circuit 1610 supplies voltage V11 (a voltage higher than voltage V12) to switches QA1 and QA2, during which phases 221 and 222 generate output voltages based on input voltage V11.

[0340] Applying a higher voltage can provide a faster circuit response.

[0341] Figure 17 This is an example diagram illustrating the first-stage power converter circuit and the corresponding bypass circuit according to the embodiments herein.

[0342] In this example embodiment, the power supply 1700 includes a multiphase converter controlled by a controller 1740. As previously discussed, the generation of the output voltage 123 from the inductive path 1431 can be controlled by controlling switches QA1 and QB1 via the controller 1740. Similarly, the generation of the output voltage 123 from the inductive path 1433 can be controlled by controlling switches QA2 and QB2 via the controller 1740.

[0343] The power supply 1700 also includes a first boost circuit 122-1, which controls the amplitude and direction of the current through the inductive path 1432; and a second boost circuit 122-2, which controls the amplitude and direction of the current through the inductive path 1434. In the manner previously discussed, each of the boost circuits 122-1 and 122-2 is operable to apply current regulation to the corresponding inductive path to maintain the output voltage 123 within a desired range.

[0344] Figure 18 This is a diagram illustrating an example computer architecture operable to perform one or more methods according to embodiments described herein.

[0345] As described above, any resource discussed herein (e.g., controller 1240, manufacturer 140, etc.) can be configured to include computer processor hardware and / or corresponding executable instructions for performing the different operations discussed herein.

[0346] As shown in the figure, the computer system 1800 of this example includes an interconnect 1811 that couples a computer-readable storage medium 1812 (e.g., a non-transitory type medium, which may be any suitable type of hardware storage medium in which digital information can be stored and retrieved)), a processor 1813 (computer processor hardware), an I / O interface 1814, and a communication interface 1817.

[0347] Multiple I / O interfaces 1814 support connection to external hardware 1899 such as keyboard, display, storage device, etc.

[0348] The computer-readable storage medium 1812 can be any hardware storage device, such as a memory, optical storage, hard disk drive, floppy disk, etc. In one embodiment, the computer-readable storage medium 1812 stores instructions and / or data.

[0349] As shown in the figure, the computer-readable storage medium 1812 can be encoded with a manufacturer application 140-1 (e.g., including instructions) to perform any of the operations discussed herein.

[0350] During operation in one embodiment, processor 1813 accesses computer-readable storage medium 1812 via interconnect 1811 to initiate, operate, execute, interpret, or otherwise perform instructions stored on computer-readable storage medium 1812 in manufacturer application 140-1. Execution of manufacturer application 140-1 produces manufacturer process 140-2 for performing any of the operations and / or processes discussed herein.

[0351] Those skilled in the art will understand that computer system 1800 may include other processes and / or software and hardware components, such as an operating system that controls the allocation and use of hardware resources to execute manufacturer application 140-1.

[0352] According to different embodiments, note that the computer system can reside in any of a variety of devices, including but not limited to power supplies, switched capacitor converters, power converters, mobile computers, personal computer systems, wireless devices, wireless access points, base stations, telephone equipment, desktop computers, laptops, netbooks, mainframe computers, handheld computers, workstations, network computers, application servers, storage devices, consumer electronic devices (such as cameras), portable video cameras, set-top boxes, mobile devices, video game consoles, handheld video game devices, peripheral devices (such as switches, modems, routers, set-top boxes, content management devices, handheld remote control devices), and any type of computing or electronic device. The computer system 1850 can reside anywhere or can be included in any suitable resource in any network environment to implement the functions discussed herein.

[0353] As described in this article, the functions supported by one or more resources are via Figure 19 and 20 The following flowchart will be used for discussion. Note that the steps in the flowchart below can be performed in any suitable order.

[0354] Figure 19 This is a flowchart 1900 illustrating an example method according to an embodiment herein. Note that there is some overlap in the concepts described above.

[0355] In processing operation 1910, the fabricator 140 receives the core material 120. The core material 120 is a magnetically conductive material.

[0356] In processing operation 1920, to further manufacture the inductor device 110, the fabricator 140 arranges one or more conductive paths in the core material 120. Each conductive path (e.g., 131, 132, etc.) extends (e.g., axially) from a first axial end 141 (input end) of the inductor device 110 through the core material 120 to a second axial end 142 (output end) of the inductor device 110. The core material 120 can be used to limit the corresponding magnetic flux generated from the current flowing through each conductive path.

[0357] Figure 20 This is a flowchart 2000 illustrating an example method according to embodiments described herein. Note that there may be some overlap in the concepts described above.

[0358] In processing operation 2010, the manufacturer 140 arranges a first power interface at the base (first layer) of a stack (such as a power converter stack assembly of components).

[0359] In processing operation 2020, the manufacturer 140 electrically couples multiple switches (arranged on the second layer of the stack) to a first power interface to receive power.

[0360] In processing operation 2030, the manufacturer 140 electrically connects an inductor device (arranged on the third layer of the stack) to a plurality of switches, the inductor device being operable to generate an output voltage based on the received power.

[0361] In processing operation 2040, the manufacturer 140 electrically connects a second power interface (arranged at the fourth layer of the stack) to the inductor device, which is operable to receive and output the output voltage generated by the inductor device.

[0362] It should be noted again that the techniques described herein are well-suited for inductor and power converter applications. However, it should be understood that the embodiments described herein are not limited to such applications, and the techniques discussed herein are also well-suited for other applications.

[0363] Although the invention has been specifically shown and described with reference to preferred embodiments thereof, those skilled in the art will understand that various changes in form and detail may be made without departing from the spirit and scope of the invention as defined by the appended claims. Such changes are intended to be covered by the scope of this application. Thus, the foregoing description of embodiments of this application is not intended to be limiting. Rather, any limitation on the invention is set forth in the appended claims.

Claims

1. An electric power device, comprising: A stack comprising multiple components, the multiple components including: The first power interface is located at the base of the stack; Multiple switches are coupled to the first power interface to receive power; An inductor device, electrically connected to the plurality of switches, the inductor device being operable to generate an output current based on received power; and A second power interface is operable to receive and output the output current; The inductor device includes a non-winding inductive path extending from a first layer comprising the plurality of switches in the stack to a second layer comprising the second power interface in the stack.

2. The power device of claim 1, wherein the plurality of switches are arranged between the first power interface and the inductor device in the stack; and The inductor device is arranged between the plurality of switches and the second power interface in the stack.

3. The power device of claim 1, wherein the first power interface includes a first contact element operable to connect the first power interface at the base of the stack to a host substrate; and The second power interface of the stack includes a second contact element operable to fix a dynamic load to the stack.

4. The power device of claim 1, wherein the stack comprising the plurality of components further comprises: A dynamic load is fixed to the second power interface, which is operable to deliver an output voltage from the inductor device to the dynamic load.

5. The power device according to claim 1, wherein the first power interface couples the plurality of switches to an input voltage node and a reference voltage node.

6. The power device of claim 5, wherein the plurality of switches are vertical field-effect transistors arranged between the first power interface and the inductor device.

7. The power device of claim 1, wherein the plurality of switches in the stack are operable to switch between an unwinding inductive path that couples an input voltage received through the first power interface to the inductor device and an unwinding inductive path that couples a ground reference voltage received through the first power interface to the inductor device, the inductive path extending from the plurality of switches in the stack to the second power interface in the stack.

8. The power device of claim 1, wherein the stack of the plurality of components is a power converter, the power converter being operable to convert an input voltage received at the first power interface into the output current output from the second power interface; and The inductor device further includes multiple non-winding inductive paths arranged between the multiple switches in the stack and the second power interface.

9. The power device of claim 8, wherein the plurality of non-winding inductive paths includes a first non-winding inductive path and a second non-winding inductive path extending through the inductor device, the first non-winding inductive path being arranged in a first phase of the power converter, the second non-winding inductive path being arranged in a second phase of the power converter, and the combination of the first phase and the second phase being arranged in parallel to generate the output current.

10. The power device of claim 8, wherein the plurality of non-winding inductive paths includes a first non-winding inductive path and a second non-winding inductive path, the first non-winding inductive path being arranged in a phase of the power converter, the second non-winding inductive path being magnetically coupled to the first non-winding inductive path, and the combination of the phase and the second non-winding inductive path being operable to generate the output current.

11. The power device of claim 1, wherein the non-winding inductive path is a first non-winding inductive path, and wherein the inductor device further comprises a second non-winding inductive path extending from the first layer comprising the plurality of switches in the stack to the second layer comprising the second power interface in the stack.

12. The power device of claim 1, wherein the inductor device comprises: The core material is a magnetically conductive ferromagnetic material; as well as A first conductive path extends from a first end of the inductor device through the core material to a second end of the inductor device, the presence of the core material making the first conductive path a first inductive path.

13. The power device of claim 12, wherein the inductor device comprises: A second conductive path extends from the first end of the inductor device through the core material to the second end of the inductor device, the presence of the core material making the second conductive path a second inductive path.

14. The power device of claim 13, wherein the first inductive path and the second inductive path are connected in parallel.

15. The power apparatus according to claim 1, further comprising: A first conductive path extends from a first layer of the stack including the first power interface and a second layer of the stack including the second power interface, and the first conductive path is coupled to a reference voltage node.

16. The power device of claim 15, wherein the first conductive path provides perimeter shielding for the inductor device.

17. The power apparatus of claim 15, further comprising: A second conductive path is arranged in the first layer of the stack, and the second conductive path is coupled to the input voltage node; as well as A first capacitor is coupled between the first conductive path and the second conductive path.

18. The power apparatus of claim 17, further comprising: A third conductive path is disposed in the second layer of the stack, including the second power interface, and the third conductive path delivers the output current; as well as A second capacitor is disposed in the third layer of the stack, and the second capacitor is coupled between the third conductive path and the second conductive path.

19. The electrical apparatus of claim 1, wherein the plurality of switches comprises a first switch and a second switch; and The source node of the first switch is coupled to the reference voltage node of the first power interface, and the drain node of the first switch is coupled to the non-winding inductive path of the inductor device; and The drain node of the second switch is coupled to the input voltage node of the first power interface, and the source node of the second switch is coupled to the non-winding inductive path of the inductor device.

20. A power converter system, comprising: Circuit board; The stack comprising multiple components according to claim 1, wherein the base of the stack is fixed to the circuit board; as well as The load is powered by the output current.

21. A method for manufacturing a stack comprising a plurality of components in a power converter, the method comprising: A first power interface is arranged at the base of the stack; Multiple switches are coupled to the first power interface to receive power; An inductor device is connected to the plurality of switches, the inductor device being operable to generate an output current based on the received power. A second power interface is connected to the inductor device, the second power interface being operable to receive and output the output current generated by the inductor device; as well as The inductor device is manufactured to include a non-winding inductive path extending from a first layer in the stack that includes the plurality of switches to a second layer in the stack that includes the second power interface.

22. The method of claim 21, further comprising: The plurality of switches are arranged in the stack between the first power interface and the inductor device; as well as The inductor device is arranged in the stack between the plurality of switches and the second power interface.

23. The method of claim 21, further comprising: The first power interface is manufactured to include a first contact element operable to connect the first power interface at the base of the stack to the host substrate. as well as The second power interface is manufactured to include a second contact element operable to secure a dynamic load to the stack.

24. The method of claim 21, further comprising: The dynamic load is fixed to the second power interface, which is operable to deliver the output current from the inductor device to the dynamic load.

25. The method of claim 21, further comprising: The first power interface is manufactured such that the plurality of switches are coupled to the input voltage node and the reference voltage node.

26. The method of claim 25, wherein the plurality of switches are vertical field-effect transistors arranged between the first power interface and the inductor device.

27. The method of claim 21, further comprising: The plurality of switches are arranged in the stack to switch between an unwinding inductive path that couples an input voltage received through the first power interface to the inductor device and an unwinding inductive path that couples a ground reference voltage received through the first power interface to the inductor device, the unwinding inductive path extending from the plurality of switches in the stack to the second power interface in the stack.

28. The method of claim 21, wherein the stack of the plurality of components is a power converter, the power converter being operable to convert an input voltage received at the first power interface into the output current output from the second power interface, the method further comprising: The inductor device is manufactured to include a plurality of unwound inductive paths arranged in the stack between the plurality of switches and the second power interface.

29. The method of claim 28, further comprising: The plurality of unwound inductive paths are manufactured to include a first unwound inductive path and a second unwound inductive path extending through the inductor device, the first unwound inductive path being arranged in a first phase of the power converter and the second unwound inductive path being arranged in a second phase of the power converter, the combination of the first phase and the second phase being arranged in parallel to generate the output current.

30. The method of claim 28, wherein the plurality of non-winding inductive paths includes a first non-winding inductive path and a second non-winding inductive path, the first non-winding inductive path being arranged in a phase of the power converter, the second non-winding inductive path being magnetically coupled to the first non-winding inductive path to apply magnetic energy regulation to the first non-winding inductive path, and the combination of the phase and the second non-winding inductive path being operable to generate the output current.

31. The method of claim 21, wherein the non-winding inductive path is a first non-winding inductive path, and the method further comprises: The inductor device is manufactured to also include a second unwound inductive path, the second unwound inductive path being manufactured to extend from a first layer in the stack including the plurality of switches to a second layer in the stack including the second power interface.

32. The method of claim 21, further comprising: The inductor device is manufactured to include: i) a core material that is a magnetically conductive ferromagnetic material, and ii) a first conductive path extending from a first end of the inductor device through the core material to a second end of the inductor device, the presence of the core material causing the first conductive path to be a first inductive path.

33. The method of claim 32, further comprising: The inductor device is manufactured to include a second conductive path extending from the first end of the inductor device through the core material to the second end of the inductor device, the presence of the core material making the second conductive path a second inductive path.

34. The method of claim 33, further comprising: Connect the first inductive path and the second inductive path in parallel.

35. The method of claim 21, further comprising: The stack is fabricated to include a first conductive path extending from a first layer of the stack including the first power interface and a second layer of the stack including the second power interface, the first conductive path being coupled to a reference voltage node.

36. The method of claim 35, wherein the first conductive path provides perimeter shielding for the inductor device.

37. The method of claim 35, further comprising: A second conductive path is arranged in the first layer of the stack, and the second conductive path is coupled to the input voltage node; as well as The stack is fabricated to include a first capacitor coupled between the first conductive path and the second conductive path.

38. The method of claim 37, further comprising: A third conductive path is arranged in the second layer of the stack, including the second power interface, and the third conductive path carries the output current; as well as The stack is fabricated as a second capacitor included in a third layer of the stack, the second capacitor being coupled between the third conductive path and the second conductive path.

39. The method of claim 21, further comprising: The plurality of switches are manufactured to include a first switch and a second switch; The source node of the first switch is coupled to the reference voltage node of the first power interface; The drain node of the first switch is coupled to the non-winding inductive path of the inductor device; The drain node of the second switch is coupled to the input voltage node of the first power interface; as well as The source node of the second switch is coupled to the non-winding inductive path of the inductor device.

40. The method of claim 39, further comprising: A controller is coupled to the stack, the controller being operable to control the switching of the first switch and the second switch to convert the input voltage received at the input voltage node into the output current.

41. A method for manufacturing a power conversion system, comprising: Receiver circuit board; The base of the stack of components according to claim 1 is fixed to the circuit board, the stack of components being operable to generate an output current to power a load fixed to the circuit board.

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