Spectrometer structure and electronic device
By integrating lenses, filters and light modulation layers on the mobile phone lens, the problems of low spectral analysis accuracy and complex spectrometer modules are solved, and the combination of high-precision spectral detection and imaging is achieved.
Patent Information
- Application Number
- CN201911032122.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2019-10-28
- Publication Date
- 2025-10-21
- Estimated Expiration
- 2039-10-28
AI Technical Summary
Existing spectral detection systems have problems such as low spectral analysis accuracy, complex spectroscopic modules, and inability to be integrated into devices such as mobile phones.
It adopts a combined structure of lenses, filters and light modulation layers. The filters are used to filter out light in specific bands. The light modulation layer improves the accuracy of spectral analysis by modulating light in different frequency bands and is integrated into the mobile phone lens.
It improves the spectral analysis accuracy and imaging quality without increasing the size of the equipment, simplifies the spectroscopic module, and is suitable for real-time spectral detection on mobile platforms.
Smart Images

Figure CN112730267B_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of optical devices, and in particular to a spectrometer structure and electronic equipment. Background Art
[0002] Spectrometers are scientific instruments that decompose complex light into spectral lines. Consisting of prisms or diffraction gratings, they measure light reflected from an object's surface. This light information is captured by the spectrometer, developed using photographic film, or displayed and analyzed using a computer's automated numerical display, thereby determining the elements present in the object. Spectrometers are widely used in monitoring air and water pollution, food hygiene, and the metal industry.
[0003] Traditional spectral detection cannot meet the needs of on-site detection and real-time monitoring due to its large size and limited operating environments. Research on spectral detection systems based on mobile platforms can not only improve the shortcomings of traditional spectral detection methods, but also realize the transformation and upgrading of spectral detection systems towards miniaturized and intelligent ones, which is of great significance to the development of modern real-time spectral detection technology.
[0004] Existing spectrometer-to-mobile phone integration solutions often require an additional spectrometer module. However, these modules are relatively immature, with long optical paths and complex components. Consequently, they are difficult to integrate with existing camera devices like mobile phones. Furthermore, existing spectrometer modules consist of only a single filter array, resulting in insufficient spectral analysis accuracy and lengthy scanning times. Summary of the Invention
[0005] (1) Technical issues to be resolved
[0006] The object of the present invention is to provide a spectrometer structure and electronic equipment to solve the technical problem of low spectral analysis accuracy in the existing spectrometer module.
[0007] (2) Technical solution
[0008] In order to solve the above technical problems, according to a first aspect of the present invention, a spectrometer structure is provided, comprising a lens, and further comprising: a filter, wherein the filter is arranged below the lens and is used to filter out light of a specific wavelength band irradiated on the lens; and a light modulation layer, wherein the light modulation layer is arranged below the filter, wherein light of different frequency bands emitted from the filter is modulated by the light modulation layer to obtain a modulated spectrum.
[0009] Wherein, the spectrometer structure further includes a substrate arranged between the light modulation layer and the filter.
[0010] In which, the optical modulation layer includes a base plate arranged on the lower surface of the substrate and at least one modulation unit, each of the modulation units is located on the base plate, and each of the modulation units is provided with a plurality of modulation holes passing through the base plate, and the modulation holes in the same modulation unit are arranged into a two-dimensional graphic structure with a first arrangement rule.
[0011] Among them, the first arrangement rule of the two-dimensional graphic structure includes: all the modulation holes in the same two-dimensional graphic structure have the same cross-sectional shape, and the modulation holes are arranged in an array in a gradual order of the size of the structural parameters; and / or the modulation holes in the same two-dimensional graphic structure have corresponding cross-sectional shapes, and the modulation holes are arranged in combination according to the second cross-sectional shape.
[0012] Among them, the structural parameters of the modulation hole include but are not limited to inner diameter, major axis length, minor axis length, rotation angle, side length or number of angles; the cross-sectional shape of the modulation hole includes but is not limited to circle, ellipse, cross, regular polygon, star or rectangle.
[0013] The light modulation layer is formed on the lower surface of the substrate by deposition or etching.
[0014] The light modulation layer occupies the entire area or a portion of the lower surface of the substrate.
[0015] The optical filters are arranged in different areas of the upper surface of the substrate and different filter layers are deposited thereon. The optical filters correspond to the respective modulation units in the optical modulation layer below.
[0016] In which, the spectrometer structure also includes a CMOS image sensor for imaging and receiving the spectrum modulated by the light modulation layer, and the CMOS image sensor is arranged on the lower surface of the light modulation layer; the spectrometer structure also includes a signal processing circuit for signal processing, reconstructing the differential response to obtain the original spectrum and image, and the signal processing circuit is arranged on the lower surface of the CMOS image sensor.
[0017] According to a second aspect of the present invention, there is further provided an electronic device comprising the spectrometer structure described above.
[0018] (3) Beneficial effects
[0019] The spectrometer structure provided by the present invention has the following advantages compared with the prior art:
[0020] Light passes through the lens and hits the filter, which can filter out light of specific wavelengths, including infrared light, which is invisible to the human eye. The light modulation layer modulates the light of different frequency bands emitted from the filter. This modulation includes, but is not limited to, light scattering, absorption, projection, reflection, interference, surface plasmons, and resonance. Furthermore, the differences in the two-dimensional pattern structure within the light modulation layer are used to enhance the spectral response differences between different regions, improving the analytical accuracy of the spectrometer structure. BRIEF DESCRIPTION OF THE DRAWINGS
[0021] Figure 1 This is a schematic diagram of the overall exploded structure of the spectrometer structure according to the first embodiment of the present invention;
[0022] Figure 2 Schematic diagram of the side structure of the spectrometer structure of the first embodiment of the present invention;
[0023] Figure 3 for Figure 1 Schematic diagram of the overall structure of the light modulation layer;
[0024] Figure 4 This is a schematic diagram of the overall exploded structure of the spectrometer structure according to the second embodiment of the present invention;
[0025] Figure 5 A schematic side view of the structure of a spectrometer according to a second embodiment of the present invention;
[0026] Figure 6 for Figure 4 Schematic diagram of the overall structure of the light modulation layer in Example 1;
[0027] Figure 7 for Figure 4 Schematic diagram of the overall structure of the second embodiment of the light modulation layer;
[0028] Figure 8 for Figure 4 Schematic diagram of the overall structure of the filter.
[0029] Reference numerals:
[0030] 1: Lens; 2: Motor; 3: Filter; 4: Substrate; 5: Light modulation layer; 6: CMOS image sensor; 7: Signal processing circuit; 8: Modulation unit; 9: Modulation hole; 10: First modulation unit; 11: Second modulation unit; 12: Third modulation unit; 13: Fourth modulation unit; 14: Fifth modulation unit; 15: Blank unit; 16: Filter unit. DETAILED DESCRIPTION
[0031] The following examples are used to illustrate the present invention but are not intended to limit the scope of the present invention.
[0032] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like to indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.
[0033] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "plurality" means at least two, such as two, three, etc., unless otherwise specifically defined.
[0034] In the present invention, unless otherwise specified or limited, the terms "installed," "connected," "connect," "fixed," etc. should be understood in a broad sense. For example, they can refer to fixed connection, detachable connection, or integration; mechanical connection, electrical connection; direct connection, or indirect connection through an intermediate medium; internal communication between two components, or interaction between two components, unless otherwise specified. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.
[0035] In the present invention, unless otherwise expressly specified or limited, when a first feature is "above" or "below" a second feature, it may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediary. Furthermore, when a first feature is "above," "above," or "above" a second feature, it may mean that the first feature is directly above or diagonally above the second feature, or simply means that the first feature is at a higher level than the second feature. When a first feature is "below," "below," or "below" a second feature, it may mean that the first feature is directly below or diagonally below the second feature, or simply means that the first feature is at a lower level than the second feature.
[0036] In the description of this specification, the reference terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" mean that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification and features of different embodiments or examples without contradiction.
[0037] like Figures 1 to 8 As shown in the figure, the spectrometer structure is schematically shown to include a lens 1, a filter 3 and a light modulation layer 5. The spectrometer structure of the present application can be integrated into the lens of a mobile phone, a camera or other electronic devices with a shooting function.
[0038] In the embodiment of the present application, the lens 1 is used to receive incident light and form an image of an object.
[0039] The filter 3 is disposed below the lens 1 and is used to filter out light of a specific wavelength band incident on the lens 1, thereby achieving spectrum analysis and high-quality imaging in the specific wavelength band. The light of the specific wavelength band may be light that can transmit wavelengths below 800 nm (nanometers).
[0040] The optical modulation layer 5 is disposed beneath the optical filter 3. It modulates the light of different frequency bands emitted from the optical filter 3 to produce a modulated spectrum. Specifically, light is irradiated onto the optical filter 3 via the lens 1. The optical modulation layer 5 modulates the light of different frequency bands emitted from the optical filter 3. This modulation effect includes, but is not limited to, light scattering, absorption, projection, reflection, interference, surface plasmons, and resonance. Furthermore, the differences in the two-dimensional pattern structure within the optical modulation layer 5 are utilized to enhance the spectral response differences between different regions, thereby improving the analytical accuracy of the spectrometer structure.
[0041] In the embodiment of the present application, the filter 3 can filter out light of a specific wavelength band irradiated on the lens 1, and can also filter out infrared light that cannot be recognized by the human eye.
[0042] The spectrometer structure also includes a motor 2, which is used to control the movement of the lens 1, that is, to adjust the distance between the lens 1 and the filter 3 to achieve high-quality imaging. It should be noted that the structure and operating principle of the motor 2 are well known to those skilled in the art and, for the sake of space, are not described in detail here.
[0043] In the embodiments of the present application, the spectrometer structure can be integrated into the small volume required by the mobile phone lens module, and the spectral analysis function can be realized without losing the original imaging function, and the spectral information can be used to improve the image quality and have the advantages of high integration.
[0044] like Figure 4 and Figure 5 As shown, in a preferred embodiment of the present application, the spectrometer structure further includes a substrate 4 arranged between the light modulation layer 5 and the filter 3.
[0045] In another preferred embodiment of the present application, the optical modulation layer 5 includes a base plate (not shown) disposed on the lower surface of the substrate 4 and at least one modulation unit 8, each of which is located on the base plate. Each of the modulation units 8 is provided with a plurality of modulation holes 9 extending through the base plate. The modulation holes 9 within the same modulation unit 8 are arranged into a two-dimensional pattern structure having a first arrangement regularity. Specifically, different two-dimensional pattern structures are used to modulate light of different wavelengths. The modulation effects include, but are not limited to, light scattering, absorption, projection, reflection, interference, surface plasmon polaritons, and resonance. The differences in the two-dimensional pattern structures can also be used to improve the differences in spectral responses between different regions, thereby improving the analytical accuracy of the spectrometer.
[0046] like Figure 6 As shown, five modulation units 8 are distributed on the bottom plate of the optical modulation layer 5 in this embodiment, namely the first modulation unit 10, the second modulation unit 11, the third modulation unit 12, the fourth modulation unit 13 and the fifth modulation unit 14, among which the fifth modulation unit 14 has the largest range, and its area is not less than the sum of the first four modulation units.
[0047] Among them, the arrangement order of the modulation holes 9 in the first modulation unit 10, the second modulation unit 11 and the third modulation unit 12 is arranged row by row or column by column according to a preset periodic order. The specific cross-sectional shapes of the modulation holes 9 in the modulation unit 8 are different from each other. The modulation holes 9 in the same modulation unit 8 have the same specific cross-sectional shape, but the arrangement order of each modulation hole 9 is arranged in an array according to the gradual change order of the size of the structural parameters, so that each modulation unit 8 has a different modulation effect and can modulate spectra of different wavelengths. By changing the gradual change order of the structural parameters of the modulation holes 9 in the modulation unit 8 and / or the specific cross-sectional shape of the modulation holes 9 according to the modulation needs, the modulation effect and / or modulation object of the current modulation unit 8 can be changed.
[0048] The fourth modulation unit 13 has the same specific cross-sectional shape as the modulation aperture 9 of the first modulation unit 10, both of which are circular. However, the structural parameters of the modulation aperture 9 of the fourth modulation unit 13 differ from those of the first modulation unit 10. Specifically, the inner diameter of the modulation aperture 9 of the fourth modulation unit 13 is smaller than that of the modulation aperture 9 of the first modulation unit 10. As a result, the fourth modulation unit 13 has a fourth modulation mode for the input spectrum. The first modulation unit 10, second modulation unit 11, third modulation unit 12, and fourth modulation unit 13 are arranged in a matrix.
[0049] All modulation apertures 9 within the fifth modulation unit 14 have the same specific cross-sectional shape, elliptical for example. All modulation apertures 9 are arranged in an array with their structural parameters gradually increasing in size, forming a two-dimensional pattern. Within this two-dimensional pattern, all modulation apertures 9 are arranged in an array, row by row and column by column, from smallest to largest, according to their major axis length, minor axis length, and rotation angle. As a result, all modulation apertures 9 collectively constitute the fifth modulation unit 14, thus providing a fifth modulation mode for the input spectrum.
[0050] It is understood that the "modulation of light of different wavelengths" described in this embodiment may include, but is not limited to, scattering, absorption, transmission, reflection, interference, surface plasmons, resonance, and other effects. The first, second, third, fourth, and fifth light modulation modes are distinct from one another. By configuring the modulation apertures 9 within the modulation unit 8, the differences in spectral response between different units can be increased. By increasing the number of units, the sensitivity to differences in spectra can be enhanced.
[0051] It is understandable that when measuring different incident spectra, the modulation effect can be changed by changing the structural parameters of the modulation hole 9 in each modulation unit 8. The change of structural parameters includes but is not limited to one or any combination of parameters such as the period, radius, side length, duty cycle and thickness of the micro-nano structure in the optical modulation layer 5.
[0052] The structure of the fifth modulation unit 14 is described in detail below.
[0053] All modulation apertures 9 of the fifth modulation unit 14 are arranged according to the same pattern: a gradient arrangement from small to large, row by row and column by column, based on the structural parameters of major axis length, minor axis length, and rotation angle. Therefore, all modulation apertures 9 on the modulation unit 8 can be considered a single modulation unit 8 or arbitrarily divided into several modulation units 8. Each of these divided modulation units 8 has a different modulation effect on the spectrum, theoretically allowing for an infinite number of modulated spectrum samples to be obtained. This dramatically increases the amount of data used to reconstruct the original spectrum and facilitates the recovery of the spectral shape of broadband spectra. The modulation effect of each modulation unit 8 on light of different wavelengths can be determined based on the structural parameter characteristics of the modulation apertures 9 within each modulation unit 8.
[0054] It is understood that the specific cross-sectional shape of the modulation aperture 9 includes, but is not limited to, a circle, an ellipse, a cross, a regular polygon, a star, or a rectangle, and may also be any combination of the above shapes. The structural parameters of the modulation aperture 9 include, but are not limited to, inner diameter, major axis length, minor axis length, rotation angle, number of corners, or side length.
[0055] In this embodiment, all modulation holes 9 on the fifth modulation unit 14 are elliptical, and the lengths of the major and minor axes of all elliptical modulation holes 9 increase row by row and column by column, and are arranged in the form of Figure 6 The horizontal direction is the horizontal axis and the vertical direction is the vertical axis. Then all the elliptical modulation holes 9 rotate from the vertical axis to the horizontal axis row by row and column by column, and the rotation angle gradually increases. All the modulation holes 9 form an overall two-dimensional graphic structure. The overall two-dimensional graphic structure is a matrix structure. The area range of the matrix structure is 5μm 2 ~4cm 2 . The specific structure of the two-dimensional graphic is as follows: only the minor axis and rotation angle of the elliptical modulation hole 9 are gradually adjusted, the major axis of the ellipse is selected as a fixed value between 200nm (nanometers) and 1000nm (nanometers), for example, 500nm (nanometers); the minor axis length varies in the range of 120nm (nanometers) to 500nm (nanometers), the rotation angle of the ellipse varies in the range of 0° to 90°, and the arrangement period of the ellipse is a fixed value between 200nm (nanometers) and 1000nm (nanometers), for example, 500nm (nanometers). The overall range of the graphic of the two-dimensional graphic structure is a rectangular array structure with a length of approximately 115μm (micrometers) and a width of 110μm (micrometers).
[0056] It can be seen that the light modulating micro-nanostructure described in this embodiment utilizes the differences in the specific cross-sectional shapes of different modulation holes 9 between different units and the arrangement of specific modulation holes 9 in the same unit to achieve different modulation effects on spectra of different wavelengths by changing the specific cross-sectional shapes of the modulation holes 9, the structural parameters of the modulation holes 9 and the arrangement period of the modulation holes 9.
[0057] The light-modulating micro-nanostructures described in this embodiment that can modulate light include, but are not limited to, one-dimensional and two-dimensional photonic crystals, surface plasmons, metamaterials, and metasurfaces. Specific materials may include silicon, germanium, silicon-germanium materials, silicon compounds, germanium compounds, metals, and III-V materials. Silicon compounds include, but are not limited to, silicon nitride, silicon dioxide, and silicon carbide.
[0058] When preparing the light modulation layer 5 , the light modulation layer 5 may be directly generated on the lower surface of the substrate 4 , or the prepared light modulation layer 5 may be transferred to the lower surface of the substrate 4 first.
[0059] The process for directly forming the light modulation layer 5 on the lower surface of the substrate 4 is as follows: First, a silicon slab with a thickness of 100 nm to 400 nm is deposited on the lower surface of the substrate 4 by methods such as sputtering or chemical vapor deposition. Second, the desired two-dimensional pattern structure is drawn on the surface using pattern transfer methods such as photolithography and electron beam lithography. Third, the silicon slab is etched using methods such as reactive ion etching, inductively coupled plasma etching, and ion beam etching to obtain the desired light modulation layer 5.
[0060] The transfer preparation method of the above-mentioned light modulation layer 5 is specifically as follows: first, the light modulation layer 5 is prepared on a silicon wafer or SOI (silicon-insulator-silicon wafer structure) according to the designed structural parameters, and then transferred to the lower surface of the substrate 4 by a transfer method.
[0061] In this embodiment, the light modulation layer 5 occupies the entire area of the lower surface of the substrate 4 and covers all pixels of the CMOS (Complementary Metal Oxide Semiconductor) image sensor 6 .
[0062] In this embodiment, the filter 3 only allows light of a specific wavelength band to pass through, such as only allows visible light to pass through.
[0063] Substrate 4 is interposed between filter 3 and light modulation layer 5. Light modulation layer 5 includes a light modulation micro-nanostructure for modulating incident light to produce a modulated spectrum. CMOS image sensor 6 is used to image and receive the modulated spectrum, providing a differential response to the modulated spectrum. Signal processing circuit 7 is used for signal processing, reconstructing the differential response to produce the original spectrum and image.
[0064] like Figure 7 As shown, the light modulating micro-nanostructure on the light modulating layer 5 of this embodiment only occupies part of the area of the lower surface of the substrate 4, leaving part of the area (pixel points) for imaging, so that imaging and spectral analysis functions can be realized simultaneously in one camera module.
[0065] In one embodiment of the present application, the structure, principle, spectrum modulation method and preparation method of the light modulating micro-nanostructure and the spectrometer integrated on the mobile phone lens described in this embodiment are basically the same as those in the previous embodiment. To save space, the similarities will not be repeated. The difference is that: the light modulation layer 5 includes a plurality of modulation units 8 and blank units 15, and the specific cross-sectional shape of the modulation hole 9 in each modulation unit 8 is different from each other. The modulation holes 9 in the same modulation unit 8 have the same specific cross-sectional shape. The specific cross-sectional shape of the modulation hole 9 includes but is not limited to a circle, an ellipse, a cross, a regular polygon, a star or a rectangle, etc., and can also be any combination of the above shapes.
[0066] The structural parameters of the modulation aperture 9 described above include, but are not limited to, inner diameter, major axis length, minor axis length, rotation angle, number of corners, or side length. Each modulation unit 8 has a different modulation function and can modulate spectra of different wavelengths. By changing the gradual change sequence of the structural parameters of the modulation aperture 9 within the modulation unit 8 and / or the specific cross-sectional shape of the modulation aperture 9 according to the modulation requirements, the modulation function and / or modulation target of the current modulation unit 8 can be changed.
[0067] There are many ways to arrange and combine the modulation unit 8 and the blank unit 15. This embodiment only schematically shows one of the arrangements and combinations (see Figure 7 ).
[0068] In the embodiment of the present application, the spectrometer structure further includes a CMOS image sensor 6 for imaging and receiving the spectrum modulated by the light modulation layer 5. The CMOS image sensor 6 is disposed on the lower surface of the light modulation layer 5. The provision of the filter 3 can also reduce interference with the CMOS image sensor 6 from light in frequency bands not required for imaging, thereby improving imaging quality.
[0069] In a preferred embodiment of the present application, the spectrometer structure further includes a signal processing circuit 7 for signal processing and reconstructing the differential response to obtain the original spectrum and image. The signal processing circuit 7 is disposed on the lower surface of the CMOS image sensor 6 .
[0070] like Figure 8As shown, the optical filter 3 described in this embodiment includes several filter units 16. Each filter unit 16 can be designed to produce a filtering effect on light of different wavelengths according to actual needs. It corresponds to the micro-nanostructures in the underlying optical modulation layer 5, improving the accuracy of spectral analysis of a certain wavelength band and realizing sub-band spectral analysis. For example, it can be designed to pass only the filter wavelength band (520nm-600nm), only the red light band (600nm-730nm), etc., and corresponds to the micro-nanostructures in the underlying optical modulation layer 5. It is mainly designed to respond to light in the corresponding wavelength band, so that the accuracy of spectral analysis in the corresponding wavelength band is further improved. Through multiple units, high-precision analysis of the spectrum is achieved. The structural parameters of the filter unit 16 can be designed independently. The micro-nanostructures on the optical modulation layer 5 can be designed according to different filter wavelength bands.
[0071] like Figure 1 and Figure 2 As shown, the structure of the substrate 4 is removed in this embodiment. When preparing the light modulation layer 5, the light modulation layer 5 can be directly generated on the lower surface of the filter 3, or the prepared light modulation layer 5 can be transferred to the lower surface of the filter 3 first. In order to save space, the same process flow as the above embodiment will not be repeated.
[0072] like Figure 3 As shown, in the micro-nanostructure described in this embodiment, an integral modulation unit 8 is provided on the optical modulation layer 5. Each modulation aperture 9 within the two-dimensional pattern structure of the modulation unit 8 has its own specific cross-sectional shape, and each modulation aperture 9 is freely combined and arranged according to the specific cross-sectional shape. Specifically, within the two-dimensional pattern structure, some modulation apertures 9 have the same specific cross-sectional shape. The modulation apertures 9 with the same specific cross-sectional shape constitute multiple modulation aperture groups. The specific cross-sectional shapes of each modulation aperture group are different, and all modulation apertures 9 are freely combined.
[0073] It is understandable that the modulation unit 8 as a whole can be regarded as modulating a spectrum of a specific wavelength, or it can be freely divided into modulation units 8 with several modulation holes 9, so that it can modulate spectra of multiple different wavelengths to increase the flexibility and diversity of light modulation.
[0074] In summary, the micro-nano structure prepared on the lower surface of the filter 3 realizes the spectroscopic function of spectral analysis, and the spectral analysis function is integrated into the mobile phone without increasing the size of the camera module.
[0075] The micro-nano structure can occupy part or all of the area of the filter 3, and a part of the area (pixel points) can be left empty. In this way, imaging and spectral analysis functions can be simultaneously realized in one camera module. The white balance can be adjusted through spectral analysis to improve the imaging quality. The object of spectral analysis can also be identified and preliminarily calibrated through imaging, thereby improving the accuracy of spectral analysis.
[0076] Different filter layers can be deposited in different areas on the upper surface of the filter 3 (near the lens group) and made to correspond to the micro-nano structure below to filter out signals in other bands, improve the accuracy of spectral analysis of a certain band, and realize sub-band spectral analysis.
[0077] Silicon-based, Si3N4 (silicon nitride), and III-V semiconductors can be selected for device preparation, which can be achieved through batch preparation using existing micro-nano processing technology. Large-area, multiple devices can be prepared at one time, with higher process maturity and lower cost.
[0078] Furthermore, by precisely controlling the growth and etching processes of micro-nanostructured materials, different 2D structures and microstructure particle sizes can be designed to achieve a wide range of wavelengths and precision for the spectrometer. Furthermore, by designing different 2D structures on the filter's underside, the technical parameters of the original camera's functionality can be controlled.
[0079] The CMOS image sensor 6 simultaneously receives signals from the entire imaging surface, thereby eliminating the problem of long response time of a scanning spectrometer.
[0080] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.
Claims
1. A spectrometer structure, comprising a lens (1), characterized in that: Also includes: a filter (3), the filter (3) being arranged below the lens (1) and being used to filter out light of a specific wavelength band irradiated on the lens (1); and a light modulation layer (5), the light modulation layer (5) being arranged below the optical filter (3), wherein the light modulation layer (5) modulates light of different frequency bands emitted from the optical filter (3) to obtain a modulated spectrum; There is a light modulation micro-nano structure on the light modulation layer, which occupies at least part of the area of the filter. The remaining area of the filter is a blank area, so as to simultaneously realize imaging and spectral analysis in one camera module, adjust the white balance through spectral analysis, and identify and preliminarily calibrate the object of spectral analysis through imaging.
2. The spectrometer structure according to claim 1, characterized in that: The spectrometer structure further comprises a substrate (4) arranged between the light modulation layer (5) and the filter (3).
3. The spectrometer structure according to claim 2, characterized in that: The optical modulation layer (5) comprises a base plate arranged on the lower surface of the substrate (4) and at least one modulation unit (8), each of the modulation units (8) being located on the base plate, and each of the modulation units (8) being provided with a plurality of modulation holes (9) penetrating the base plate, and each of the modulation holes (9) in the same modulation unit (8) being arranged into a two-dimensional graphic structure having a first arrangement regularity.
4. The spectrometer structure according to claim 3, characterized in that: The first arrangement rule of the two-dimensional graphic structure includes: All the modulation holes (9) in the same two-dimensional graphic structure have the same cross-sectional shape, and the modulation holes (9) are arranged in an array in a gradual order of structural parameter size; and / or Each of the modulation holes (9) in the same two-dimensional graphic structure has a corresponding cross-sectional shape, and each of the modulation holes (9) is arranged in combination according to the second cross-sectional shape.
5. The spectrometer structure according to claim 4, characterized in that: The structural parameters of the modulation hole (9) include inner diameter, major axis length, minor axis length, rotation angle, side length or angle number; the cross-sectional shape of the modulation hole (9) includes circle, ellipse, cross, regular polygon, star or rectangle.
6. The spectrometer structure according to claim 2, characterized in that: The light modulation layer (5) is formed on the lower surface of the substrate (4) by deposition or etching.
7. The spectrometer structure according to claim 2, characterized in that: The light modulation layer (5) occupies the entire area or a portion of the lower surface of the substrate (4).
8. The spectrometer structure according to claim 3, characterized in that: The optical filter (3) is arranged in different areas of the upper surface of the substrate (4) and different filter layers are deposited thereon. The optical filter (3) corresponds to each of the modulation units (8) in the optical modulation layer (5) below.
9. The spectrometer structure according to claim 1, characterized in that: The spectrometer structure further comprises a CMOS image sensor (6) for imaging and receiving the spectrum modulated by the light modulation layer (5), wherein the CMOS image sensor (6) is arranged on the lower surface of the light modulation layer (5); The spectrometer structure further includes a signal processing circuit (7) for signal processing and reconstructing the differential response to obtain the original spectrum and image. The signal processing circuit (7) is arranged on the lower surface of the CMOS image sensor (6).
10. An electronic device, characterized in that: The spectrometer structure comprises the structure described in any one of claims 1 to 9.
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