Mask, pattern correction method thereof, storage medium and device preparation method

Abstract

The present disclosure provides a mask, a pattern correction method thereof, a storage medium and a device preparation method, wherein the mask includes at least one inclined step-shaped pattern along a preset direction; wherein the inclined step-shaped pattern includes a first step-shaped profile and a second step-shaped profile respectively located on both sides of the inclined step-shaped pattern along the preset direction; the first step-shaped profile includes a plurality of first right-angle turning points, and the second step-shaped profile includes a plurality of second right-angle turning points; in the inclined step-shaped pattern, the first right-angle turning points and the second right-angle turning points are arranged alternately. The pattern line width of this mask is easy to control, which can not only improve the consistency of optical proximity correction, but also improve the uniformity of mask process and chip pattern.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor manufacturing technology, and in particular to a mask, a pattern correction method thereof, a storage medium, and a device preparation method. Background Art

[0002] In the semiconductor manufacturing process, in order to transfer the circuit pattern of the integrated circuit (IC) to the semiconductor chip, the circuit pattern of the integrated circuit needs to be designed as a mask pattern, and then the mask pattern is transferred from the mask surface to the semiconductor chip. However, with the reduction of the critical dimension (CD) of the integrated circuit and the influence of the resolution limit (Resolution Limit) of the optical exposure tool (OET), when the high-density mask pattern is exposed for pattern transfer, it is easy to produce the optical proximity effect (OPE), which causes defects in the mask pattern transfer. To address the problem of optical proximity effect, a method currently commonly used in the industry is optical proximity correction (OPC), which reduces the deviation of the lithography pattern obtained by exposure by changing the shape of the original layout pattern.

[0003] In the existing optical proximity correction method, for the tilted target pattern, multiple sampling points are set at the edge of the tilted target pattern contour, and the tilted target pattern is divided into several segments through the sampling points. The edge contours of each segment are adaptively expanded outward to increase the pattern line width at each segment, thereby obtaining a mask pattern. However, the contour of the mask obtained in this way is neither vertical nor horizontal, the mask line width is difficult to control, and the mask line width uniformity is poor, which will eventually affect the line width uniformity of the chip pattern. Summary of the invention

[0004] In view of the above problems, the present disclosure provides a mask, a pattern correction method thereof, a storage medium and a device preparation method, which solve the technical problem that the existing optical proximity correction method obtains poor uniformity of the line width of the mask pattern.

[0005] In a first aspect, the present disclosure provides a mask, comprising at least one inclined step-shaped pattern along a first preset direction;

[0006] Wherein, the inclined step-shaped pattern comprises a first step-shaped profile and a second step-shaped profile respectively located on two sides of the inclined step-shaped pattern along the first preset direction;

[0007] The first stepped profile includes a plurality of first right-angle inflection points, and the second stepped profile includes a plurality of second right-angle inflection points;

[0008] In the inclined step-shaped pattern, the first right-angle inflection points and the second right-angle inflection points are arranged alternately.

[0009] According to an embodiment of the present disclosure, optionally, in the inclined stair-shaped pattern, an extension direction of a line between the first right-angle inflection points of any two even-numbered bits or any two odd-numbered bits is the same as the first preset direction;

[0010] In the inclined stair-shaped pattern, an extension direction of a line connecting the second right-angle inflection points of any two even-numbered bits or any two odd-numbered bits is the same as the first preset direction.

[0011] According to an embodiment of the present disclosure, optionally, the heights of the steps of the first stepped profile are the same.

[0012] According to an embodiment of the present disclosure, optionally, the heights of the steps of the second stepped profile are the same.

[0013] According to an embodiment of the present disclosure, optionally, a step height of the first stepped profile is the same as a step height of the second stepped profile.

[0014] According to an embodiment of the present disclosure, optionally, in the mask, the number of the inclined step-shaped patterns is multiple, and the inclined step-shaped patterns are spaced apart and parallel to each other;

[0015] The first step-shaped profiles of two adjacent inclined step-shaped patterns are aligned.

[0016] According to an embodiment of the present disclosure, optionally, in the mask, the number of the inclined step-shaped patterns is multiple, and the inclined step-shaped patterns are spaced apart and parallel to each other;

[0017] The first stepped profiles of two adjacent inclined stepped patterns are arranged in a staggered manner.

[0018] According to an embodiment of the present disclosure, optionally, the first stepped profiles of the inclined stepped patterns are sequentially staggered along a second preset direction, and the staggered distances of the first stepped profiles of two adjacent inclined stepped patterns along the second preset direction are the same.

[0019] In a second aspect, the present disclosure provides a method for correcting a pattern of a mask, comprising:

[0020] Providing a target pattern; wherein the target pattern includes at least one inclined pattern along a first preset direction, and each of the inclined patterns includes a first contour and a second contour respectively located on both sides of the inclined pattern along the first preset direction;

[0021] Setting a plurality of first sampling points at intervals on the first contour, and setting a plurality of second sampling points at intervals on the second contour;

[0022] According to the first sampling points, a plurality of first reference rectangles are set on the first contour, and according to the second sampling points, a plurality of second reference rectangles are set on the second contour; wherein the first reference rectangles have two adjacent first sampling points as diagonal points, and the second reference rectangles have two adjacent second sampling points as diagonal points;

[0023] Moving the first reference rectangle along a second preset direction toward the central axis of the inclined pattern by a first preset distance to obtain a third reference rectangle;

[0024] The second reference rectangle is moved along a third preset direction toward the central axis of the inclined pattern by a second preset distance to obtain a fourth reference rectangle; wherein the second preset direction is opposite to the third preset direction;

[0025] Fill patterns in the third reference rectangle and the fourth reference rectangle to form a first rectangular pattern and a second rectangular pattern, respectively, so as to correct the inclined pattern and obtain an inclined step pattern; wherein the inclined step pattern includes the first rectangular pattern and the second rectangular pattern, and an inclined pattern portion located between the first rectangular pattern and the second rectangular pattern; in the inclined step pattern, the first rectangular pattern and the second rectangular pattern are alternately arranged.

[0026] According to an embodiment of the present disclosure, optionally, it further includes:

[0027] The inclined pattern portions at both side edges of the inclined pattern that are not covered by the first rectangular pattern and the second rectangular pattern are removed.

[0028] According to an embodiment of the present disclosure, optionally, in the inclined pattern, the first sampling point and the second sampling point are symmetrically arranged with the central axis of the inclined pattern as a symmetry axis.

[0029] According to an embodiment of the present disclosure, optionally, a long side or a short side of the first reference rectangle is parallel to the second preset direction.

[0030] According to an embodiment of the present disclosure, optionally, a long side or a short side of the second reference rectangle is parallel to the third preset direction.

[0031] According to an embodiment of the present disclosure, optionally, the first preset distance is smaller than the length of a side of the first reference rectangle parallel to the second preset direction.

[0032] According to an embodiment of the present disclosure, optionally, the second preset distance is smaller than the length of a side of the second reference rectangle parallel to the third preset direction.

[0033] According to an embodiment of the present disclosure, optionally, the first preset distance is different from the second preset distance.

[0034] According to an embodiment of the present disclosure, optionally, the first preset distance is the same as the second preset distance.

[0035] According to an embodiment of the present disclosure, optionally, in the target pattern, there are multiple inclined patterns, and the inclined patterns are spaced apart and parallel to each other;

[0036] The first rectangular patterns in two adjacent inclined step-shaped patterns are aligned.

[0037] According to an embodiment of the present disclosure, optionally, in the target pattern, there are multiple inclined patterns, and the inclined patterns are spaced apart and parallel to each other;

[0038] The method further comprises:

[0039] The even-numbered inclined stair-shaped patterns or the odd-numbered inclined stair-shaped patterns are moved along a fourth preset direction by a third preset distance, so that the first rectangular patterns in two adjacent inclined stair-shaped patterns are arranged alternately.

[0040] According to an embodiment of the present disclosure, optionally, in the target pattern, there are multiple inclined patterns, and the inclined patterns are spaced apart and parallel to each other;

[0041] The method further comprises:

[0042] All the inclined step patterns after the first inclined step pattern are moved in sequence by a corresponding distance along the fifth preset direction, so that the first rectangular patterns of each inclined step pattern are staggered in sequence along the fifth preset direction, and the staggered distances of the first rectangular patterns of two adjacent inclined step patterns along the fifth preset direction are the same.

[0043] In a third aspect, the present disclosure provides an optical proximity correction device for a mask, comprising:

[0044] A pattern providing module, configured to provide a target pattern; wherein the target pattern comprises at least one inclined pattern along a first preset direction, and each of the inclined patterns comprises a first contour and a second contour respectively located on both sides of the inclined pattern along the first preset direction;

[0045] A sampling point setting module, used for setting a plurality of first sampling points arranged at intervals on the first contour, and setting a plurality of second sampling points arranged at intervals on the second contour;

[0046] a rectangle setting module, configured to set a plurality of first reference rectangles on the first contour according to the first sampling points, and to set a plurality of second reference rectangles on the second contour according to the second sampling points; wherein the first reference rectangles have two adjacent first sampling points as diagonal points, and the second reference rectangles have two adjacent second sampling points as diagonal points;

[0047] A first moving module, used for moving the first reference rectangle along a second preset direction toward the central axis of the inclined pattern by a first preset distance to obtain a third reference rectangle;

[0048] A second moving module, used for moving the second reference rectangle along a third preset direction toward the central axis of the inclined pattern by a second preset distance to obtain a fourth reference rectangle; wherein the second preset direction is opposite to the third preset direction;

[0049] A pattern filling module is used to fill patterns in the third reference rectangle and the fourth reference rectangle to form a first rectangular pattern and a second rectangular pattern respectively, so as to correct the inclined pattern to obtain an inclined step pattern; wherein the inclined step pattern includes the first rectangular pattern and the second rectangular pattern, and an inclined pattern portion located between the first rectangular pattern and the second rectangular pattern; in the inclined step pattern, the first rectangular pattern and the second rectangular pattern are alternately arranged.

[0050] In a fourth aspect, the present disclosure provides an electronic device, comprising a memory and a processor, wherein the memory stores a computer program, and when the computer program is executed by the processor, the method for correcting the pattern of a mask as described in any one of the second aspects is executed.

[0051] In a fifth aspect, the present disclosure provides a storage medium, wherein a computer program stored in the storage medium, when executed by one or more processors, implements the mask pattern correction method as described in any one of the second aspects.

[0052] In a sixth aspect, the present disclosure provides a device preparation method, comprising:

[0053] providing a semiconductor substrate;

[0054] forming a photoresist layer over the substrate;

[0055] Patterning the photoresist layer by using the mask described in any one of the first aspect or the mask modified by the method described in any one of the second aspect to form a photoresist pattern above the substrate;

[0056] The substrate is etched through the photoresist pattern to form a target pattern on the substrate; wherein the target pattern includes at least one inclined pattern along a first preset direction.

[0057] Compared with the prior art, one or more embodiments of the above scheme may have the following advantages or beneficial effects:

[0058] The present disclosure provides a mask, a pattern correction method thereof, a storage medium and a device preparation method, wherein the mask includes at least one inclined step-shaped pattern along a preset direction; wherein the inclined step-shaped pattern includes a first step-shaped profile and a second step-shaped profile respectively located on both sides of the inclined step-shaped pattern along the preset direction; the first step-shaped profile includes a plurality of first right-angle turning points, and the second step-shaped profile includes a plurality of second right-angle turning points; in the inclined step-shaped pattern, the first right-angle turning points and the second right-angle turning points are arranged alternately. The pattern line width of this mask is easy to control, which can not only improve the consistency of optical proximity correction, but also improve the uniformity of mask process and chip pattern. BRIEF DESCRIPTION OF THE DRAWINGS

[0059] The accompanying drawings are used to provide a further understanding of the present disclosure and constitute a part of the specification. Together with the following specific embodiments, they are used to explain the present disclosure but do not constitute a limitation of the present disclosure. In the accompanying drawings:

[0060] Figure 1 is a schematic structural diagram of a mask plate shown in an exemplary embodiment of the present disclosure;

[0061] Figure 2 is a schematic structural diagram of another mask according to an exemplary embodiment of the present disclosure;

[0062] Figure 3 It is a flowchart of a method for correcting a pattern of a mask shown in an exemplary embodiment of the present disclosure;

[0063] Figures 4 to 11 It is a schematic diagram of a pattern layout formed by relevant steps of a method for pattern correction of a mask according to an exemplary embodiment of the present disclosure;

[0064] Fig.12It is a connection block diagram of a mask pattern correction device shown in an exemplary embodiment of the present disclosure;

[0065] In the drawings, the same reference numerals are used for the same components, and the drawings are not drawn to scale;

[0066] 10- inclined step-like pattern; 101- first step-like outline; 1011- first right-angle turning point; 102- second step-like outline; 1021- second right-angle turning point; 20- inclined pattern; 201- first outline; 202- second outline; 203- first sampling point; 204- second sampling point; 205- inclined pattern portion between the first rectangular pattern and the second rectangular pattern; 206- inclined pattern portion whose edges on both sides of the inclined pattern are not covered by the first rectangular pattern and the second rectangular pattern; 30- first reference rectangle; 40- second reference rectangle; 50- third reference rectangle; 60- fourth reference rectangle; 70- first rectangular pattern; 80- second rectangular pattern. DETAILED DESCRIPTION

[0067] The following will describe the implementation methods of the present disclosure in detail in conjunction with the accompanying drawings and embodiments, so that the implementation process of how the present disclosure applies technical means to solve technical problems and achieve corresponding technical effects can be fully understood and implemented accordingly. The embodiments of the present disclosure and the various features in the embodiments can be combined with each other without conflict, and the technical solutions formed are all within the protection scope of the present disclosure. In the drawings, the sizes and relative sizes of layers and regions may be exaggerated for clarity. The same reference numerals throughout represent the same elements.

[0068] It should be understood that although the terms "first", "second", "third", etc. can be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present disclosure, the first element, component, region, layer or part discussed below can be represented as a second element, component, region, layer or part.

[0069] It will be appreciated that spatially relative terms, such as "above", "above", "below", "under", etc., may be used herein for convenience of description to describe the relationship of one element or feature to other elements or features shown in the figures. It will be appreciated that the spatially relative terms are intended to encompass different orientations of the device in use and operation in addition to the orientation shown in the figures. For example, if the device in the figures is turned over, then elements or features described as "below other elements" would be oriented "above" the other elements or features. Thus, the exemplary terms "below" and "under" can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.

[0070] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be a limitation of the present disclosure. When used herein, the singular forms "one", "an" and "said / the" are also intended to include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "consisting of" and / or "comprising", when used in this specification, determine the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0071] Embodiments of the present disclosure are described herein with reference to cross-sectional views that are schematic diagrams of ideal embodiments (and intermediate structures) of the present disclosure. As such, variations from the shapes shown due to, for example, manufacturing techniques and / or tolerances can be expected. Therefore, embodiments of the present disclosure should not be limited to the specific shapes of the zones shown herein, but rather include shape deviations due to, for example, manufacturing. For example, an implanted region shown as a rectangle typically has rounded or curved features and / or an implant concentration gradient at its edges, rather than a binary change from an implanted region to a non-implanted region. Similarly, a buried region formed by implantation may result in some implantation in the region between the buried region and the surface through which the implantation is performed. Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to show the actual shape of the region of the device and are not intended to limit the scope of the present disclosure.

[0072] In order to thoroughly understand the present disclosure, detailed structures and steps will be presented in the following description to illustrate the technical solutions proposed by the present disclosure. The preferred embodiments of the present disclosure are described in detail below, but in addition to these detailed descriptions, the present disclosure may also have other implementations.

[0073] Embodiment 1

[0074] like Figure 1As shown, the embodiment of the present disclosure provides a mask, comprising at least one inclined step pattern 10 along a first preset direction. The inclined step pattern 10 comprises a first stepped profile 101 and a second stepped profile 102 respectively located on both sides of the inclined step pattern 10 along the first preset direction.

[0075] The first stepped profile 101 includes a plurality of first right-angle inflection points 1011 , and the second stepped profile 102 includes a plurality of second right-angle inflection points 1021 .

[0076] In the inclined step-shaped pattern 10, the first right-angle turning point 1011 and the second right-angle turning point 1021 are arranged alternately. Figure 1 As shown in the figure, the first step profile 101 and the second step profile 102 are staggered in the vertical direction. That is, the steps of the first step profile 101 and the steps of the second step profile 102 are staggered. In other words, in the inclined step profile 10, the line width at some positions is smaller, and the line width at some positions is larger. And it is ensured that the profile of each position of the mask pattern is in the horizontal direction or the vertical direction, so that the line width of the pattern of the mask is easy to control, which can not only improve the consistency of the optical proximity correction, but also improve the uniformity of the mask process and the uniformity of the chip pattern.

[0077] In the inclined stair-shaped pattern 10, the extending direction of the line between any two even-numbered or any two odd-numbered first right-angle turning points 1011 is the same as the first preset direction, that is, the line connecting the convex points or the concave points on the first stair-shaped profile 101 is also along the first preset direction.

[0078] In the inclined stair-shaped pattern 10, the extending direction of the line between any two even or odd second right-angle turning points 1021 is the same as the first preset direction, that is, the line connecting the convex points or the concave points on the second stair-shaped profile 102 is also along the first preset direction.

[0079] The step heights ( h1 ) of the first stepped profile 101 are the same, the step heights ( h2 ) of the second stepped profile 102 are the same, and the step heights of the first stepped profile 101 and the second stepped profile 102 are the same (ie, h1 = h2 ).

[0080] When there are multiple inclined step patterns 10 in the mask, each inclined step pattern 10 is spaced apart and parallel to each other. The first step profiles 101 of two adjacent inclined step patterns 10 can be staggered or aligned. In the structure where two adjacent inclined step patterns 10 are staggered, the first step profiles 101 of any even number of inclined step patterns 10 can be aligned, or the first step profiles 101 of any odd number of inclined step patterns 10 can be aligned. Or as Figure 2As shown, the first step profiles 101 of each inclined step pattern 10 are staggered in sequence along a second preset direction (such as horizontal left), and the staggered distance (d3) of the first step profiles 101 of two adjacent inclined step patterns 10 along the second preset direction (horizontal left) is the same. This structure can increase the distance between the profile protrusions of two adjacent inclined step patterns 10, reduce the risk of exposure failure in the exposure process, and reduce the process difficulty.

[0081] The embodiment of the present disclosure provides a mask, which includes at least one inclined step-shaped pattern 10 along a first preset direction; wherein the inclined step-shaped pattern 10 includes a first step-shaped profile 101 and a second step-shaped profile 102 respectively located on both sides of the inclined step-shaped pattern 10 along the first preset direction; the first step-shaped profile 101 includes a plurality of first right-angle turning points 1011, and the second step-shaped profile 102 includes a plurality of second right-angle turning points 1021; in the inclined step-shaped pattern 10, the first right-angle turning points 1011 and the second right-angle turning points 1021 are arranged alternately. The pattern line width of this mask is easy to control, which can not only improve the consistency of optical proximity correction, but also improve the uniformity of mask process and chip pattern.

[0082] Embodiment 2

[0083] like Figure 3 As shown, the embodiment of the present disclosure provides a method for correcting a pattern of a mask, comprising:

[0084] Step S101: Figure 4 As shown, a target pattern is provided; wherein the target pattern includes at least one inclined pattern 20 along a first preset direction, and each inclined pattern 20 includes a first contour 201 and a second contour 202 respectively located on both sides of the inclined pattern 20 along the first preset direction.

[0085] The target pattern is a target of optical proximity correction, that is, in an ideal state, after the mask process is completed, the shape of the pattern formed on the wafer (chip substrate) is the same as the shape of the target pattern.

[0086] Step S102: Figure 5 As shown, a plurality of first sampling points 203 are arranged at intervals on the first contour 201 , and a plurality of second sampling points 204 are arranged at intervals on the second contour 202 .

[0087] In the inclined pattern 20, the distance between any two adjacent first sampling points 203 is the same, and the distance between any two adjacent second sampling points 204 is the same. And the distance between any two adjacent first sampling points 203 is equal to the distance between any two adjacent second sampling points 204. In other words, in the inclined pattern 20, the first sampling points 203 and the second sampling points 204 are symmetrically arranged with the central axis of the inclined pattern 20 as the symmetry axis.

[0088] The sampling points are used to compare the difference between the target pattern and the mask pattern set later, obtain the influence of the optical proximity effect on the target pattern, and obtain the edge position error for judging whether the optical proximity correction is completed. Since the line width of the pattern will affect the influence of the optical proximity effect on the pattern, in order to obtain the influence of the optical proximity effect on the edge position of the pattern, at least one sampling point is set on each side of the target pattern.

[0089] Step S103: Figure 6 As shown, a plurality of first reference rectangles 30 are set on the first contour 201 according to the first sampling points 203, and a plurality of second reference rectangles 40 are set on the second contour 202 according to the second sampling points 204; wherein the first reference rectangle 30 has two adjacent first sampling points 203 as diagonal points, and the second reference rectangle 40 has two adjacent second sampling points 204 as diagonal points.

[0090] The long side or the short side of the first reference rectangle 30 is parallel to the second preset direction ( Figure 6 That is, the lengths of the sides of the first reference rectangle 30 are along the vertical direction or the horizontal direction.

[0091] The long side or the short side of the second reference rectangle 40 is parallel to the third preset direction ( Figure 6 That is, the lengths of the sides of the second reference rectangle 40 are along the vertical direction or the horizontal direction.

[0092] Step S104: Figure 7 As shown, the first reference rectangle 30 is moved along the second preset direction (horizontally left) toward the central axis of the inclined pattern 20 by a first preset distance to obtain a third reference rectangle 50 .

[0093] The first preset distance d1 is smaller than the length of the side of the first reference rectangle 30 parallel to the second preset direction. Figure 7 As shown in , d1 is smaller than the length of the horizontal side of the first reference rectangle 30 .

[0094] Step S105: moving the second reference rectangle 40 along a third preset direction (horizontally right) toward the central axis of the inclined pattern 20 by a second preset distance to obtain a fourth reference rectangle 60; wherein the second preset direction is opposite to the third preset direction.

[0095] The second preset distance d2 is smaller than the length of the side of the second reference rectangle 40 parallel to the third preset direction. Figure 7 As shown in , d2 is less than the length of the horizontal side of the second reference rectangle 40.

[0096] The first preset distance and the second preset distance may be different (ie, d1≠d2), or may be the same (ie, d1=d2). In other words, the translation distance of the first reference rectangle 30 and the translation distance of the second reference rectangle 40 may be the same or different.

[0097] Step S106: Figure 8 As shown, patterns are filled in the third reference rectangle 50 and the fourth reference rectangle 60 to form a first rectangular pattern 70 and a second rectangular pattern 80, respectively, so as to correct the inclined pattern 20 and obtain an inclined step pattern; wherein the inclined step pattern includes the first rectangular pattern 70 and the second rectangular pattern 80, and an inclined pattern portion 205 located between the first rectangular pattern 70 and the second rectangular pattern 80; in the inclined step pattern, the first rectangular pattern 70 and the second rectangular pattern 80 are alternately arranged.

[0098] The first rectangular pattern 70 and the second rectangular pattern 80 make the contours of both sides of the inclined step-shaped pattern step-shaped. The inclined step-shaped pattern is the pattern of the mask. This optical proximity correction method ensures that the contour of each part of the mask pattern is in the horizontal direction or the vertical direction, so that the line width of the pattern of the mask is easy to control, which can not only improve the consistency of the optical proximity correction, but also improve the uniformity of the mask process and the uniformity of the chip pattern.

[0099] It should be noted that, due to the translation of the first reference rectangle 30 and the second reference rectangle 40 , portions of the edges on both sides of the inclined pattern 20 are located outside the range of the first rectangular pattern 70 and the second rectangular pattern 80 .

[0100] Step S107: Fig. 9 As shown, the inclined pattern portions 206 at both side edges of the inclined pattern 20 that are not covered by the first rectangular pattern 70 and the second rectangular pattern 80 are removed.

[0101] When there are multiple inclined patterns 20 in the target pattern, each inclined pattern 20 is spaced apart and parallel to each other. The first rectangular patterns 70 in two adjacent inclined step-shaped patterns can be staggered or aligned. Similarly, in the structure in which two adjacent inclined step-shaped patterns are staggered, the first rectangular patterns 70 of any even number of inclined step-shaped patterns can be aligned, or the first rectangular patterns 70 of any odd number of inclined step-shaped patterns can be aligned.

[0102] In order to obtain a structure in which two adjacent inclined step-shaped patterns are staggered, the following steps are further included after step S107:

[0103] like Fig.10 As shown, the even-numbered inclined staircase pattern or the odd-numbered inclined staircase pattern (the second inclined staircase pattern in the figure) is moved along a fourth preset direction (such as horizontal left) by a third preset distance d3 so that the first rectangular patterns in two adjacent inclined staircase patterns are staggered.

[0104] or Fig.11 As shown, all the inclined step patterns after the first inclined step pattern (the second inclined step pattern, the third inclined step pattern, etc.) are moved in sequence along the fifth preset direction (such as horizontal left) by corresponding distances, so that the first rectangular patterns 70 of each inclined step pattern are staggered in sequence along the fifth preset direction (horizontal left), and the staggered distance d3 of the first rectangular patterns 70 of two adjacent inclined step patterns along the fifth preset direction (horizontal left) is the same.

[0105] like Fig.11 The structure shown can increase the distance between the contour protrusions of two adjacent inclined step-shaped patterns, reduce the risk of failure to expose in the exposure process, and reduce the difficulty of the process.

[0106] The disclosed embodiment provides a method for optical proximity correction of a mask, wherein sampling points are determined at the edge of a target image, and then a reference rectangle is defined by the sampling points, and the reference rectangle is translated a certain distance toward the central axis of the inclined pattern 20, and a pattern is filled therein to form an inclined step-shaped pattern. The pattern line width of the mask after correction by this method is easy to control, which can not only improve the consistency of optical proximity correction, but also improve the uniformity of the mask process and the uniformity of the chip pattern.

[0107] Embodiment 3

[0108] See also Fig.12 This embodiment provides an optical proximity correction device 100 for a mask, including: a pattern providing module 101, a sampling point setting module 102, a rectangle setting module 103, a first moving module 104, a second moving module 105 and a pattern filling module 106.

[0109] The pattern providing module 101 is used to provide a target pattern; wherein the target pattern includes at least one inclined pattern along a first preset direction, and each of the inclined patterns includes a first contour and a second contour respectively located on both sides of the inclined pattern along the first preset direction;

[0110] A sampling point setting module 102, configured to set a plurality of first sampling points at intervals on the first contour, and set a plurality of second sampling points at intervals on the second contour;

[0111] A rectangle setting module 103 is used to set a plurality of first reference rectangles on the first contour according to the first sampling points, and to set a plurality of second reference rectangles on the second contour according to the second sampling points; wherein the first reference rectangles have two adjacent first sampling points as diagonal points, and the second reference rectangles have two adjacent second sampling points as diagonal points;

[0112] A first moving module 104 is used to move the first reference rectangle along a second preset direction toward the central axis of the inclined pattern by a first preset distance to obtain a third reference rectangle;

[0113] A second moving module 105 is used to move the second reference rectangle along a third preset direction toward the central axis of the inclined pattern by a second preset distance to obtain a fourth reference rectangle; wherein the second preset direction is opposite to the third preset direction;

[0114] The pattern filling module 106 is used to fill the pattern in the third reference rectangle and the fourth reference rectangle to form a first rectangular pattern and a second rectangular pattern respectively, so as to correct the inclined pattern to obtain an inclined step pattern; wherein the inclined step pattern includes the first rectangular pattern and the second rectangular pattern, and an inclined pattern portion located between the first rectangular pattern and the second rectangular pattern; in the inclined step pattern, the first rectangular pattern and the second rectangular pattern are alternately arranged.

[0115] The specific implementation process of the above method steps can be found in Example 2, and this example will not be repeated here.

[0116] Embodiment 4

[0117] This embodiment provides an electronic device, which may be a mobile phone, a computer or a tablet computer, etc., including a memory and a processor, wherein a computer program is stored in the memory, and when the computer program is executed by the processor, the optical proximity correction method of the mask described in Embodiment 2 is implemented. It is understood that the electronic device may also include an input / output (I / O) interface and a communication component.

[0118] The processor is used to execute all or part of the steps in the optical proximity correction method for the mask in Embodiment 2. The memory is used to store various types of data, which may include instructions of any application or method in the electronic device, and data related to the application.

[0119] The processor can be an application specific integrated circuit (ASIC), a digital signal processor (DSP), a digital signal processing device (DSPD), a programmable logic device (PLD), a field programmable gate array (FPGA), a controller, a microcontroller, a microprocessor or other electronic components, and is used to execute the optical proximity correction method of the mask in the above-mentioned embodiment 1.

[0120] The memory can be implemented by any type of volatile or non-volatile storage device or a combination thereof, such as static random access memory (SRAM), electrically erasable programmable read-only memory (EEPROM), erasable programmable read-only memory (EPROM), programmable read-only memory (PROM), read-only memory (ROM), magnetic storage, flash memory, magnetic disk or optical disk.

[0121] Embodiment 5

[0122] This embodiment provides a computer-readable storage medium, such as a flash memory, a hard disk, a multimedia card, a card-type memory (for example, an SD or DX memory, etc.), a random access memory (RAM), a static random access memory (SRAM), a read-only memory (ROM), an electrically erasable programmable read-only memory (EEPROM), a programmable read-only memory (PROM), a magnetic memory, a disk, an optical disk, a server, an App application store, etc., on which a computer program is stored. When the computer program is executed by a processor, the following method steps can be implemented:

[0123] Step S101: providing a target pattern; wherein the target pattern comprises at least one inclined pattern along a first preset direction, and each of the inclined patterns comprises a first contour and a second contour respectively located on both sides of the inclined pattern along the first preset direction;

[0124] Step S102: setting a plurality of first sampling points at intervals on the first contour, and setting a plurality of second sampling points at intervals on the second contour;

[0125] Step S103: setting a plurality of first reference rectangles on the first contour according to the first sampling points, and setting a plurality of second reference rectangles on the second contour according to the second sampling points; wherein the first reference rectangles have two adjacent first sampling points as diagonal points, and the second reference rectangles have two adjacent second sampling points as diagonal points;

[0126] Step S104: moving the first reference rectangle along a second preset direction toward the central axis of the inclined pattern by a first preset distance to obtain a third reference rectangle;

[0127] Step S105: moving the second reference rectangle along a third preset direction toward the central axis of the inclined pattern by a second preset distance to obtain a fourth reference rectangle; wherein the second preset direction is opposite to the third preset direction;

[0128] Step S106: Filling patterns in the third reference rectangle and the fourth reference rectangle to form a first rectangular pattern and a second rectangular pattern respectively, so as to correct the inclined pattern and obtain an inclined step pattern; wherein the inclined step pattern includes the first rectangular pattern and the second rectangular pattern, and an inclined pattern portion located between the first rectangular pattern and the second rectangular pattern; in the inclined step pattern, the first rectangular pattern and the second rectangular pattern are alternately arranged.

[0129] The specific implementation process of the above method steps can be found in Example 2, and this example will not be repeated here.

[0130] Embodiment 6

[0131] The present disclosure provides a device manufacturing method, including:

[0132] Step S201: providing a semiconductor substrate;

[0133] Step S202: forming a photoresist layer on the substrate;

[0134] Step S203: patterning the photoresist layer using the mask described in the first embodiment or the mask modified by the method described in the second embodiment to form a photoresist pattern on the substrate;

[0135] Step S204: etching the substrate through the photoresist pattern to form a target pattern on the substrate; wherein the target pattern includes at least one inclined pattern along a first preset direction.

[0136] The disclosed embodiment provides a device manufacturing method, which forms a target pattern on a substrate by performing a mask process through a mask with an inclined step-shaped pattern; the target pattern includes at least one inclined pattern along a first preset direction. This mask can improve the uniformity of chip patterns.

[0137] Although the embodiments disclosed in the present disclosure are as above, the contents described are only embodiments adopted for facilitating the understanding of the present disclosure and are not intended to limit the present disclosure. Any technician in the technical field to which the present disclosure belongs can make any modifications and changes in the form and details of the implementation without departing from the spirit and scope disclosed in the present disclosure, but the protection scope of the present disclosure shall still be subject to the scope defined by the attached claims.

Claims

1. A mask, characterized in that: comprising at least one inclined step-shaped pattern along a first preset direction; Wherein, the inclined step-shaped pattern comprises a first step-shaped profile and a second step-shaped profile respectively located on two sides of the inclined step-shaped pattern along the first preset direction; The first stepped profile includes a plurality of first right-angle inflection points, and the second stepped profile includes a plurality of second right-angle inflection points; In the inclined step-shaped pattern, the first right-angle inflection points and the second right-angle inflection points are arranged alternately in the vertical direction; In the inclined stair-shaped pattern, the extending direction of the line between the first right-angle inflection points of any two even-numbered positions or any two odd-numbered positions is the same as the first preset direction; In the inclined stair-shaped pattern, the extending direction of the line between the second right-angle inflection points of any two even-numbered positions or any two odd-numbered positions is the same as the first preset direction; In the mask, the number of the inclined step-shaped patterns is multiple, and the inclined step-shaped patterns are spaced apart and parallel to each other; The first stepped profiles of two adjacent inclined stepped patterns are arranged in a staggered manner.

2. The mask according to claim 1, characterized in that: The steps of the first stepped profile have the same height.

3. The mask according to claim 2, characterized in that: The steps of the second stepped profile have the same height.

4. The mask according to claim 3, characterized in that: The step height of the first stepped profile is the same as the step height of the second stepped profile.

5. The mask according to claim 1, characterized in that: The first step-shaped profiles of the inclined step-shaped patterns are sequentially staggered along a second preset direction, and the staggered distances of the first step-shaped profiles of two adjacent inclined step-shaped patterns along the second preset direction are the same.

6. A method for correcting a pattern of a mask, characterized in that: include: Providing a target pattern; wherein the target pattern includes at least one inclined pattern along a first preset direction, and each of the inclined patterns includes a first contour and a second contour respectively located on both sides of the inclined pattern along the first preset direction; Setting a plurality of first sampling points at intervals on the first contour, and setting a plurality of second sampling points at intervals on the second contour; According to the first sampling points, a plurality of first reference rectangles are set on the first contour, and according to the second sampling points, a plurality of second reference rectangles are set on the second contour; wherein the first reference rectangles have two adjacent first sampling points as diagonal points, and the second reference rectangles have two adjacent second sampling points as diagonal points; Moving the first reference rectangle along a second preset direction toward the central axis of the inclined pattern by a first preset distance to obtain a third reference rectangle; The second reference rectangle is moved along a third preset direction toward the central axis of the inclined pattern by a second preset distance to obtain a fourth reference rectangle; wherein the second preset direction is opposite to the third preset direction; Fill patterns in the third reference rectangle and the fourth reference rectangle to form a first rectangular pattern and a second rectangular pattern, respectively, so as to correct the inclined pattern and obtain an inclined step pattern; wherein the inclined step pattern includes the first rectangular pattern and the second rectangular pattern, and an inclined pattern portion located between the first rectangular pattern and the second rectangular pattern; in the inclined step pattern, the first rectangular pattern and the second rectangular pattern are alternately arranged.

7. The method according to claim 6, characterized in that Also includes: The inclined pattern portions at both side edges of the inclined pattern that are not covered by the first rectangular pattern and the second rectangular pattern are removed.

8. The method according to claim 6, characterized in that In the tilted pattern, the first sampling point and the second sampling point are symmetrically arranged with the central axis of the tilted pattern as a symmetry axis.

9. The method according to claim 6, characterized in that A long side or a short side of the first reference rectangle is parallel to the second preset direction.

10. The method according to claim 6, characterized in that A long side or a short side of the second reference rectangle is parallel to the third preset direction.

11. The method according to claim 9, characterized in that The first preset distance is smaller than the length of a side of the first reference rectangle parallel to the second preset direction.

12. The method according to claim 10, characterized in that The second preset distance is smaller than the length of a side of the second reference rectangle parallel to the third preset direction.

13. The method according to claim 6, characterized in that The first preset distance is different from the second preset distance.

14. The method according to claim 6, characterized in that The first preset distance is the same as the second preset distance.

15. The method according to claim 6, characterized in that In the target pattern, the number of the inclined patterns is multiple, and the inclined patterns are spaced apart and parallel to each other; The first rectangular patterns in two adjacent inclined step-shaped patterns are aligned.

16. The method according to claim 6, characterized in that In the target pattern, the number of the inclined patterns is multiple, and the inclined patterns are spaced apart and parallel to each other; The method further comprises: The even-numbered inclined stair-shaped patterns or the odd-numbered inclined stair-shaped patterns are moved along a fourth preset direction by a third preset distance, so that the first rectangular patterns in two adjacent inclined stair-shaped patterns are arranged alternately.

17. The method according to claim 6, characterized in that In the target pattern, the number of the inclined patterns is multiple, and the inclined patterns are spaced apart and parallel to each other; The method further comprises: All the inclined step patterns after the first inclined step pattern are moved in sequence by a corresponding distance along the fifth preset direction, so that the first rectangular patterns of each inclined step pattern are staggered in sequence along the fifth preset direction, and the staggered distances of the first rectangular patterns of two adjacent inclined step patterns along the fifth preset direction are the same.

18. An optical proximity correction device for a mask, characterized in that: include: A pattern providing module, configured to provide a target pattern; wherein the target pattern comprises at least one inclined pattern along a first preset direction, and each of the inclined patterns comprises a first contour and a second contour respectively located on both sides of the inclined pattern along the first preset direction; A sampling point setting module, used for setting a plurality of first sampling points arranged at intervals on the first contour, and setting a plurality of second sampling points arranged at intervals on the second contour; a rectangle setting module, configured to set a plurality of first reference rectangles on the first contour according to the first sampling points, and to set a plurality of second reference rectangles on the second contour according to the second sampling points; wherein the first reference rectangles have two adjacent first sampling points as diagonal points, and the second reference rectangles have two adjacent second sampling points as diagonal points; A first moving module, used for moving the first reference rectangle along a second preset direction toward the central axis of the inclined pattern by a first preset distance to obtain a third reference rectangle; A second moving module, used for moving the second reference rectangle along a third preset direction toward the central axis of the inclined pattern by a second preset distance to obtain a fourth reference rectangle; wherein the second preset direction is opposite to the third preset direction; A pattern filling module is used to fill patterns in the third reference rectangle and the fourth reference rectangle to form a first rectangular pattern and a second rectangular pattern respectively, so as to correct the inclined pattern to obtain an inclined step pattern; wherein the inclined step pattern includes the first rectangular pattern and the second rectangular pattern, and an inclined pattern portion located between the first rectangular pattern and the second rectangular pattern; in the inclined step pattern, the first rectangular pattern and the second rectangular pattern are alternately arranged.

19. An electronic device, characterized in that: The invention comprises a memory and a processor, wherein a computer program is stored in the memory, and when the computer program is executed by the processor, the method for correcting the pattern of the mask according to any one of claims 6 to 17 is executed.

20. A storage medium, characterized in that: The computer program stored in the storage medium, when executed by one or more processors, implements the mask pattern correction method as claimed in any one of claims 6 to 17.

21. A device preparation method, characterized in that: include: providing a semiconductor substrate; forming a photoresist layer over the substrate; Patterning the photoresist layer by using a mask according to any one of claims 1 to 5 or a mask modified by a method according to any one of claims 6 to 17 to form a photoresist pattern above the substrate; The substrate is etched through the photoresist pattern to form a target pattern on the substrate; wherein the target pattern includes at least one inclined pattern along a first preset direction.

Images