Radio frequency MEMS switch device and manufacturing method thereof

Abstract

A radio frequency MEMS switch device is provided, comprising: a substrate; a signal line, a ground line and a first electrode arranged on the substrate, the signal line and the ground line are spaced apart from each other and connected to the first electrode; a second electrode arranged above the first electrode to face the first electrode, the second electrode and the first electrode are spaced apart from each other; a hinge connecting the second electrode and the ground line; wherein the hinge, the second electrode, the signal line and the ground line are formed at the same time. A method for manufacturing a radio frequency MEMS switch device is also provided. The radio frequency MEMS switch device and the method for manufacturing the same of the present invention construct a coplanar waveguide and an upper electrode at the same time, which can simplify the manufacturing process. In addition, since the coplanar waveguide and the upper electrode are constructed at the same time, there is no need to fix an anchor point, which reduces the alignment accuracy requirements of the switch and shortens the manufacturing cycle.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor technology, and in particular, relates to a radio frequency MEMS switch device and a manufacturing method thereof. Background Art

[0002] Micro-Electro-Mechanical System (MEMS) refers to a system that integrates multiple components designed and manufactured at the micron level and is suitable for low-cost mass production. Radio frequency micro-electromechanical system (RF MEMS) is one of the important application areas of MEMS technology. RF MEMS is used for signal processing in radio frequency and microwave frequency circuits. It is a technology that will have a significant impact on the existing radio frequency structures in radar and communications. Among RF MEMS devices, the most popular one is the RF MEMS switch, which is the core device in RF MEMS devices. RF MEMS switches are micromechanical switches that work in the frequency range from radio frequency to millimeter wave, and rely on mechanical movement to achieve on / off control of transmission lines. Compared with traditional field effect transistor (FET) switches and PIN diode switches, RF MEMS switches have the advantages of low power consumption, high isolation, low insertion loss, and low intermodulation components.

[0003] RF MEMS switches are widely used in communication systems and are important control components in the fields of radar, electronic countermeasures, wireless communications, etc. However, the manufacturing process of existing RF MEMS switches is relatively complicated, resulting in low manufacturing efficiency. Summary of the invention

[0004] In order to solve the above problems in the prior art, an object of the present invention is to provide a radio frequency MEMS switch device and a manufacturing method thereof which simplifies the manufacturing process to improve efficiency.

[0005] According to one aspect of an embodiment of the present invention, a radio frequency MEMS switch device is provided, which includes: a substrate; a signal line, a ground line and a first electrode arranged on the substrate, the signal line and the ground line are spaced apart from each other and connected to the first electrode; a second electrode is arranged above the first electrode to face the first electrode, the second electrode is spaced apart from the first electrode; a hinge connecting the second electrode and the ground line; the hinge, the second electrode, the signal line and the ground line are formed at the same time.

[0006] In the radio frequency MEMS switch device provided according to one aspect of an embodiment of the present invention, the radio frequency MEMS switch device further includes: a dielectric layer covering the first electrode.

[0007] In the radio frequency MEMS switch device provided according to one aspect of an embodiment of the present invention, the radio frequency MEMS switch device further includes: an isolation oxide layer disposed between the substrate and the signal line, the ground line and the first electrode.

[0008] In a radio frequency MEMS switch device provided according to one aspect of an embodiment of the present invention, the ground wire includes a first ground wire and a second ground wire, the first ground wire and the second ground wire are spaced apart from each other, and the signal wire is arranged between the first ground wire and the second ground wire; the second electrode is rectangular, and the order in which its four sides are connected in series is the first side, the second side, the third side and the fourth side, the first side is adjacent to the second ground wire, and the third side is adjacent to the first ground wire; the hinge includes a first hinge and a second hinge spaced apart from each other; the first hinge includes: a first beam formed by a first corner of the second electrode extending in a direction away from the first side; a second beam formed by the first beam extending in a direction toward the second side; and a second beam formed by the second beam extending in a direction toward the a third beam extending in a direction toward the third side; a fourth beam extending in a direction toward the fourth side by the third beam; wherein the fourth beam is connected to the first ground line, and the first angle is the angle between the first side and the fourth side; the second hinge comprises: a fifth beam extending in a direction away from the third side by the second corner of the second electrode; a sixth beam extending in a direction toward the fourth side by the fifth beam; a seventh beam extending in a direction toward the first side by the sixth beam; an eighth beam extending in a direction toward the second side by the seventh beam; the eighth beam is connected to the second ground line, and the second angle is the angle between the second side and the third side.

[0009] In the radio frequency MEMS switch device provided according to one aspect of an embodiment of the present invention, the second electrode has a plurality of release holes.

[0010] According to another aspect of an embodiment of the present invention, a method for manufacturing a radio frequency MEMS switch device is provided, which includes: forming a first electrode on a substrate; simultaneously forming on the substrate the signal line connected to the first electrode, a ground line spaced apart from the signal line, a second electrode located above the first electrode and facing the first electrode, and a hinge connecting the second electrode and the ground line.

[0011] In the method for manufacturing a radio frequency MEMS switch device provided according to an aspect of an embodiment of the present invention, before simultaneously forming on the substrate the signal line connected to the first electrode, a ground line spaced apart from the signal line, a second electrode located above the first electrode and facing the first electrode, and a hinge connecting the second electrode and the ground line, the method for manufacturing the radio frequency MEMS switch device further includes: forming a dielectric layer covering the first electrode.

[0012] In a method for manufacturing a radio frequency MEMS switch device provided according to an aspect of an embodiment of the present invention, before forming a first electrode on a substrate, the method for manufacturing a radio frequency MEMS switch device further includes: forming an isolation oxide layer on the substrate; forming the first electrode on the substrate, specifically including: forming the first electrode on the isolation oxide layer.

[0013] In a method for manufacturing a radio frequency MEMS switch device provided according to one aspect of an embodiment of the present invention, the signal line connected to the first electrode, the ground line spaced apart from the signal line, the second electrode located above the first electrode and facing the first electrode, and the hinge connecting the second electrode and the ground line are simultaneously formed on the substrate, specifically comprising: forming a sacrificial layer on the first electrode, the cross-sectional shape of the sacrificial layer being an isosceles trapezoid; forming a structural layer on the substrate and the sacrificial layer, the structural layer covering the sacrificial layer; patterning the structural layer to form the signal line, the ground line, the second electrode, the hinge, and a plurality of release holes located on the second electrode; and removing the sacrificial layer through the release holes.

[0014] In a method for manufacturing a radio frequency MEMS switch device provided according to an aspect of an embodiment of the present invention, the ground wire formed by patterning the structural layer includes a first ground wire and a second ground wire, the first ground wire and the second ground wire are spaced apart from each other, and the signal wire is arranged between the first ground wire and the second ground wire; the second electrode formed by patterning the structural layer is rectangular, the four sides of the second electrode are connected in series in the order of the first side, the second side, the third side and the fourth side, the first side is adjacent to the second ground wire, and the third side is adjacent to the first ground wire; the hinge formed by patterning the structural layer includes a first hinge and a second hinge spaced apart from each other; the first hinge includes: a first beam formed by a first corner of the second electrode extending in a direction away from the first side; A second beam is formed by extending a beam in a direction toward the second side; a third beam is formed by extending the second beam in a direction toward the third side; a fourth beam is formed by extending the third beam in a direction toward the fourth side; wherein the fourth beam is connected to the first ground line, and the first angle is the angle between the first side and the fourth side; the second hinge comprises: a fifth beam is formed by extending the second corner of the second electrode in a direction away from the third side; a sixth beam is formed by extending the fifth beam in a direction toward the fourth side; a seventh beam is formed by extending the sixth beam in a direction toward the first side; an eighth beam is formed by extending the seventh beam in a direction toward the second side; wherein the eighth beam is connected to the second ground line, and the second angle is the angle between the second side and the third side.

[0015] Beneficial effects: In the RF MEMS switch device and the manufacturing method thereof provided by the present invention, the coplanar waveguide and the upper electrode are constructed and formed at the same time, so that the manufacturing process can be simplified. In addition, since the coplanar waveguide and the upper electrode are constructed and formed at the same time, there is no need to fix the anchor point, which reduces the alignment accuracy requirements of the switch and shortens the manufacturing cycle. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The above and other aspects, features and advantages of the embodiments of the present invention will become more apparent through the following description in conjunction with the accompanying drawings, in which:

[0017] Figure 1 is a schematic structural diagram of a radio frequency MEMS switch device according to an embodiment of the present invention;

[0018] Figure 2 is a top view of a second electrode, a hinge and a ground line in a radio frequency MEMS switch device according to an embodiment of the present invention;

[0019] FIG. 3A to FIG. 3D is a process diagram of a radio frequency MEMS switch device according to an embodiment of the present invention;

[0020] FIG. 4A to FIG. 4C is a process diagram for simultaneously forming a second electrode and a coplanar waveguide in a method for manufacturing a radio frequency MEMS switch device according to an embodiment of the present invention;

[0021] Figure 5 is a result diagram of simulating the insertion loss of the radio frequency MEMS switch device according to an embodiment of the present invention using high-frequency structure simulation software;

[0022] Figure 6 This is a result diagram of simulating the isolation of the radio frequency MEMS switch device according to an embodiment of the present invention using high-frequency structure simulation software. DETAILED DESCRIPTION

[0023] Hereinafter, specific embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention may be implemented in many different forms, and the present invention should not be construed as being limited to the specific embodiments set forth herein. On the contrary, these embodiments are provided to explain the principles of the present invention and their practical applications, so that other persons skilled in the art can understand the various embodiments of the present invention and various modifications suitable for specific intended applications.

[0024] As used herein, the term "including" and its variations represent open terms, meaning "including but not limited to". The terms "based on", "according to", etc. mean "based at least in part on", "based at least in part on". The terms "one embodiment" and "an embodiment" mean "at least one embodiment". The term "another embodiment" means "at least one other embodiment". The terms "first", "second", etc. may refer to different or the same objects. Other definitions may be included below, whether explicit or implicit. Unless the context clearly indicates otherwise, the definition of a term is consistent throughout the specification.

[0025] As described in the background technology, the manufacturing process of the existing radio frequency (RF) MEMS switch is relatively complicated, resulting in low manufacturing efficiency. Therefore, in order to simplify the manufacturing process of the RF MEMS switch, an RF MEMS switch device and a manufacturing method thereof that simultaneously forms a coplanar waveguide and an upper electrode are provided according to an embodiment of the present invention. The RF MEMS switch device includes: a substrate; a signal line, a ground line, and a first electrode disposed on the substrate, the signal line and the ground line are spaced apart from each other and connected to the first electrode; a second electrode disposed above the first electrode to face the first electrode, the second electrode and the first electrode are spaced apart from each other; a hinge connecting the second electrode and the ground line; wherein the hinge, the second electrode, the signal line, and the ground line are formed simultaneously.

[0026] Therefore, in the RF MEMS switch device, the coplanar waveguide and the upper electrode are constructed at the same time, which can simplify the manufacturing process. In addition, since the coplanar waveguide and the upper electrode are constructed at the same time, there is no need to fix the anchor point, which reduces the alignment accuracy requirements of the switch and shortens the manufacturing cycle.

[0027] The radio frequency MEMS switch device and the manufacturing method thereof for simultaneously forming a coplanar waveguide and an upper electrode according to an embodiment of the present invention will be described in detail below with reference to the accompanying drawings.

[0028] Figure 1 is a schematic structural diagram of a radio frequency MEMS switch device according to an embodiment of the present invention.

[0029] Reference Figure 1 The radio frequency MEMS switch device according to an embodiment of the present invention includes a substrate 1, an isolation oxide layer 2, a first electrode 3, a dielectric layer 4, a first hinge 51, a second hinge 52, a second electrode 6, a first ground line 7, a second ground line 8, a signal line 9 and a release hole 10.

[0030] In one example, the substrate 1 may be a high-resistance silicon wafer, because high-resistance silicon has a smaller loss angle and can reduce substrate loss.

[0031] The isolation oxide layer 2 is disposed on the substrate 1. Specifically, the isolation oxide layer 2 is spread flat and fully spread on a surface of the substrate 1. The isolation oxide layer 2 may be a silicon dioxide (SiO2) layer, which can reduce leakage current and thus reduce the loss of the substrate 1.

[0032] Here, the ground wires include a first ground wire 7 and a second ground wire 8. The number of hinges is determined according to actual conditions, but is not less than the number of ground wires, and generally the number of hinges is 2 or 4. The first ground wire 7 and the second ground wire 8 are disposed on the isolation oxide layer 2, and are spaced apart from each other.

[0033] The first electrode 3 may also be referred to as a driving electrode. The first electrode 3 and the signal line 9 are also disposed on the isolation oxide layer 2, and both are located between the first ground line 7 and the second ground line 8. Further, the first electrode 3 and the signal line 9 are connected to each other. In this way, when the driving voltage is not applied to the first electrode 3, the signal line 9 can transmit a radio frequency signal together with the first electrode 3.

[0034] The dielectric layer 4 covers the first electrode 3 to prevent the second electrode 6 from directly contacting the first electrode 3 and causing short circuit or adhesion. The dielectric layer 4 can be made of a conventional dielectric material Si3N4, which has a larger dielectric constant and a larger breakdown field strength.

[0035] The second electrode 6 may also be referred to as an upper electrode. The second electrode 6 is disposed above the first electrode 3 to face the first electrode 3, and the second electrode 6 and the first electrode 3 maintain a predetermined spacing distance when the first electrode 3 is not applied with a driving voltage. Of course, in this case, the second electrode 6 maintains an appropriate spacing distance from the dielectric layer 4. That is, the second electrode 6 is suspended by the support of the hinge to face the first electrode 3 at a distance. Further, the second electrode 6 may face the first electrode 3 head-on. The second electrode 6 may be made of Au, which has a smaller elastic modulus and DC impedance.

[0036] The first hinge 51 connects the second electrode 6 to the first ground line 7, and the second hinge 52 connects the second electrode 6 to the second ground line 8. Here, the second electrode 6, the hinges (the first hinge 51, the second hinge 52), and the coplanar waveguide (including the signal line 9, the first ground line 7, and the second ground line 8) are formed at the same time, and the specific formation process will be described in detail in the following manufacturing method.

[0037] A plurality of release holes 10 are arranged on the second electrode 6, and the function of the release holes 10 will be described in detail in the following manufacturing method.

[0038] The specific connection method of the second electrode, the hinge and the ground wire (the first ground wire 7 and the second ground wire 8) is described in detail below. Figure 2is a top view of the second electrode, release hole, hinge and ground line in the RF MEMS switch device according to an embodiment of the present invention. Note that Figure 2 Other components in the RF MEMS switch device are omitted.

[0039] Refer to Figure 1 and Figure 2 The second electrode 6 is rectangular, and the order of its four sides connected in series is the first side 61, the second side 62, the third side 63 and the fourth side 64. The first side 61 is adjacent to the second ground line 8, and the third side 63 is adjacent to the first ground line 7.

[0040] The first hinge 51 includes: a first beam 511 formed by extending the first corner of the second electrode 6 in a direction away from the first side 61; a second beam 512 formed by extending the first beam 511 in a direction toward the second side 62; a third beam 513 formed by extending the second beam 512 in a direction toward the third side 63; and a fourth beam 514 formed by extending the third beam 513 in a direction toward the fourth side 64. Here, the fourth beam 514 is connected to the first ground line 7, and the first angle is the angle between the first side 61 and the fourth side 64.

[0041] The second hinge 52 includes: a fifth beam 521 formed by extending the second corner of the second electrode 6 in a direction away from the third side 63; a sixth beam 522 formed by extending the fifth beam 521 in a direction toward the fourth side 64; a seventh beam 523 formed by extending the sixth beam 522 in a direction toward the first side 61; and an eighth beam 524 formed by extending the seventh beam 523 in a direction toward the second side 62. Here, the eighth beam 524 is connected to the second ground line 8, and the second angle is the angle between the second side 62 and the third side 63. That is, the first angle and the second angle are a pair of opposite corners of the second electrode 6 in a rectangular shape.

[0042] The working principle of the RF MEMS switch device according to the embodiment of the present invention is described in detail below. Figure 1 When the RF MEMS switch device (capacitive switch) is in the open state, the RF signal is transmitted normally through the signal line 9 (and the first electrode 3). When a driving voltage is applied to the first electrode 3, the second electrode 6 moves downward under the action of the electrostatic force, so that the center of the second electrode 10 bends downward and contacts the second electrode 3 covered with the dielectric layer 4 (the RF MEMS switch device is in the closed state at this time). At this time, the RF signal will be coupled to the first ground line 7 and the second ground line 8 at both ends through the contacting second electrode 6, so that the transmitted RF signal is disconnected. In this way, the opening / closing of the RF MEMS switch device is controlled by the applied driving voltage, thereby achieving control of the RF signal.

[0043] The purpose of the structural design of the second electrode 6 is to reduce the driving voltage of the switch. The theoretical calculation formula of the driving voltage is as follows:

[0044]

[0045]

[0046] K total =nK m

[0047]

[0048] Wherein, K is the elastic coefficient of the structure of the second electrode 6, E is the elastic modulus of the material of the second electrode 6, w is the width of the beam, t is the thickness of the beam, l is the length of the beam, and K m is the elastic coefficient of a single hinge, n is the number of hinges, V p is the switch driving voltage, g0 is the air gap, ε0 is the vacuum dielectric constant, and A is the overlapping area of ​​the first electrode 3 and the second electrode 6.

[0049] According to the above theoretical formula, it can be concluded that reducing the thickness of the beam, and / or reducing the width of the beam, and / or increasing the length of the beam, and / or reducing the number of hinges, and / or increasing the bending degree of the hinges can make the second electrode 6 have a smaller elastic coefficient, thereby reducing the driving voltage of the switch.

[0050] FIG. 3A to FIG. 3D is a process diagram of a radio frequency MEMS switch device according to an embodiment of the present invention.

[0051] Reference Figure 3A , an isolation oxide layer 2 is formed on the substrate 1.

[0052] Reference Figure 3B , a first electrode 3 is formed on the isolation oxide layer 2.

[0053] Reference Figure 3C , a dielectric layer 4 covering the first electrode 3 is formed on the isolation oxide layer 2 .

[0054] In addition, it should be noted that the dielectric layer 4 here covers the upper surface and both side surfaces of the first electrode 3, but the dielectric layer 4 does not cover the front and back (perpendicular to the paper direction) surfaces of the first electrode 3. This is because when the signal line is subsequently manufactured, the signal line needs to be in contact with the front and back surfaces of the first electrode 3.

[0055] Reference Figure 3D A signal line (not shown here) connected to the first electrode 3, a first ground line 7, a second ground line 8, a second electrode 6 located above the first electrode 3 and facing the first electrode 3, a first hinge 51 connecting the second electrode 6 and the first ground line 7, and a second hinge 52 connecting the second electrode 6 and the second ground line 8 are simultaneously formed on the isolation oxide layer 2. FIG. 4A to FIG. 4C It is a process diagram for simultaneously forming a second electrode and a coplanar waveguide in a method for manufacturing a radio frequency MEMS switch device according to an embodiment of the present invention.

[0056] Reference Figure 4A , after completing Figure 3C After the process shown, a sacrificial layer 5 is formed on the dielectric layer 4 .

[0057] Here, the sacrificial layer 5 covers the upper surface and both sides of the dielectric layer 4 , but does not cover the front and back surfaces (perpendicular to the paper) of the dielectric layer 4 , and thus does not cover the front and back surfaces of the first electrode 3 .

[0058] In one example, the cross-sectional shape of the sacrificial layer 5 is an isosceles trapezoid, which is due to the influence of side etching during the etching process. However, such a structure facilitates the subsequent formation of a coplanar waveguide and a second electrode 6. This is because the corresponding connection point of the shape formed in this way is not a right angle, but an obtuse angle, which can reduce stress concentration and make the connection part more stable.

[0059] Reference Figure 4B A structural layer is formed on the isolation oxide layer 2 and the sacrificial layer 5, the structural layer covers the sacrificial layer 5, and the structural layer is patterned to form a signal line, a first ground line 7, a second ground line 8, a second electrode 6, a first hinge 51 and a second hinge 52, and a plurality of release holes 10 located on the second electrode 6.

[0060] Reference Figure 4C , the sacrificial layer 5 is removed through the release hole 10. In one example, the sacrificial layer 5 is dry-released for a long time through the release hole 10 using an M4L oxygen plasma stripper to remove the sacrificial layer 5.

[0061] Figure 5 1 is a result diagram of simulating the insertion loss of the RF MEMS switch device according to an embodiment of the present invention using high-frequency structure simulation software. Figure 5 ,As the operating frequency of the RF MEMS switch device increases, the performance of the RF MEMS switch device deteriorates, and its insertion loss is better than -0.10dB at the frequency of 6GHz.

[0062] Figure 6 1 is a result diagram of simulating the isolation of the RF MEMS switch device according to the embodiment of the present invention using high-frequency structure simulation software. Figure 6 , the RF MEMS switch device has the best switching performance when the operating frequency is 6Gz, and the isolation is better than -30dB.

[0063] The above describes specific embodiments of the present invention. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps recorded in the claims can be performed in an order different from that in the embodiments and still achieve the desired results. In addition, the processes depicted in the accompanying drawings do not necessarily require the specific order or continuous order shown to achieve the desired results. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.

[0064] Not all steps and units in the above-mentioned processes and system structure diagrams are necessary, and some steps or units can be ignored according to actual needs. The execution order of each step is not fixed and can be determined according to needs. The device structure described in the above-mentioned embodiments can be a physical structure or a logical structure, that is, some units may be implemented by the same physical entity, or some units may be implemented by multiple physical entities, or some components in multiple independent devices may be implemented together.

[0065] The terms "exemplary," "example," and the like used throughout this specification mean "used as an example, instance, or illustration" and do not mean "preferred" or "advantageous" over other embodiments. The detailed description includes specific details for the purpose of providing an understanding of the described techniques. However, these techniques can be implemented without these specific details. In some instances, in order to avoid obscuring the concepts of the described embodiments, well-known structures and devices are shown in block diagram form.

[0066] The optional implementation modes of the embodiments of the present invention are described in detail above in conjunction with the accompanying drawings. However, the embodiments of the present invention are not limited to the specific details in the above implementation modes. Within the technical concept of the embodiments of the present invention, various simple modifications can be made to the technical solutions of the embodiments of the present invention, and these simple modifications all belong to the protection scope of the embodiments of the present invention.

[0067] The above description of the contents of this specification is provided to enable any person of ordinary skill in the art to implement or use the contents of this specification. Various modifications to the contents of this specification will be apparent to those of ordinary skill in the art, and the general principles defined herein may be applied to other variations without departing from the scope of protection of the contents of this specification. Therefore, the contents of this specification are not limited to the examples and designs described herein, but are consistent with the widest range of principles and novel features disclosed herein.

Claims

1. A radio frequency MEMS switch device, characterized in that: include: substrate; A signal line, a ground line and a first electrode are arranged on the substrate, wherein the signal line and the ground line are spaced apart from each other and connected to the first electrode; a second electrode disposed above the first electrode to face the first electrode, the second electrode and the first electrode being spaced apart from each other; a hinge connecting the second electrode and the ground line; Wherein, the hinge, the second electrode, the signal line and the ground line are formed simultaneously; Wherein, the manufacturing method of the radio frequency MEMS switch device includes: forming the first electrode on the substrate; forming a sacrificial layer on the first electrode, wherein the cross-sectional shape of the sacrificial layer is an isosceles trapezoid; forming a structural layer on the substrate and the sacrificial layer, wherein the structural layer covers the sacrificial layer; Performing patterning on the structural layer to form the signal line, the ground line, the second electrode, the hinge, and a plurality of release holes on the second electrode; The sacrificial layer is removed through the release hole.

2. The radio frequency MEMS switch device according to claim 1, characterized in that: Also includes: A dielectric layer covers the first electrode.

3. The radio frequency MEMS switch device according to claim 1, characterized in that: Also includes: An isolation oxide layer is disposed between the substrate and the signal line, the ground line and the first electrode.

4. The radio frequency MEMS switch device according to claim 1 or 3, characterized in that: The ground line includes a first ground line and a second ground line, the first ground line and the second ground line are spaced apart from each other, and the signal line is arranged between the first ground line and the second ground line; The second electrode is rectangular, and the order of its four sides being connected in series is the first side, the second side, the third side and the fourth side, the first side is adjacent to the second ground line, and the third side is adjacent to the first ground line; The hinge includes a first hinge and a second hinge spaced apart from each other; The first hinge comprises: a first beam formed by extending the first corner of the second electrode in a direction away from the first side; a second beam formed by extending the first beam in a direction toward the second side; a third beam formed by extending the second beam in a direction toward the third side; and a fourth beam formed by extending the third beam in a direction toward the fourth side; wherein the fourth beam is connected to the first ground line, and the first angle is the angle between the first side and the fourth side; The second hinge includes: a fifth beam formed by the second corner of the second electrode extending in a direction away from the third side; a sixth beam formed by the fifth beam extending in a direction toward the fourth side; a seventh beam formed by the sixth beam extending in a direction toward the first side; and an eighth beam formed by the seventh beam extending in a direction toward the second side; wherein the eighth beam is connected to the second ground line, and the second angle is the angle between the second side and the third side.

5. The radio frequency MEMS switch device according to claim 1, characterized in that: The second electrode is provided with a plurality of release holes.

6. A method for manufacturing a radio frequency MEMS switch device, characterized in that: include: forming a first electrode on a substrate; forming, on the substrate, a signal line connected to the first electrode, a ground line spaced apart from the signal line, a second electrode located above the first electrode and facing the first electrode, and a hinge connecting the second electrode and the ground line; The signal line connected to the first electrode, a ground line spaced apart from the signal line, a second electrode located above the first electrode and facing the first electrode, and a hinge connecting the second electrode and the ground line are simultaneously formed on the substrate, specifically comprising: forming a sacrificial layer on the first electrode, wherein the cross-sectional shape of the sacrificial layer is an isosceles trapezoid; forming a structural layer on the substrate and the sacrificial layer, wherein the structural layer covers the sacrificial layer; Performing patterning on the structural layer to form the signal line, the ground line, the second electrode, the hinge, and a plurality of release holes on the second electrode; The sacrificial layer is removed through the release hole.

7. The method for manufacturing a radio frequency MEMS switch device according to claim 6, characterized in that: Before simultaneously forming on the substrate the signal line connected to the first electrode, a ground line spaced apart from the signal line, a second electrode located above the first electrode and facing the first electrode, and a hinge connecting the second electrode and the ground line, the method for manufacturing the RF MEMS switch device further includes: forming a dielectric layer covering the first electrode.

8. The method for manufacturing a radio frequency MEMS switch device according to claim 6, characterized in that: Before forming the first electrode on the substrate, the method for manufacturing the radio frequency MEMS switch device further includes: forming an isolation oxide layer on the substrate; Forming a first electrode on the substrate specifically includes: forming the first electrode on the isolation oxide layer.

9. The method for manufacturing a radio frequency MEMS switch device according to claim 6, characterized in that: The ground line formed by patterning the structural layer includes a first ground line and a second ground line, the first ground line and the second ground line are spaced apart from each other, and the signal line is arranged between the first ground line and the second ground line; The second electrode formed by patterning the structural layer is rectangular, the four sides of the second electrode are connected in series in the order of a first side, a second side, a third side and a fourth side, the first side is adjacent to the second ground line, and the third side is adjacent to the first ground line; The hinge formed by patterning the structural layer includes a first hinge and a second hinge spaced apart from each other; The first hinge comprises: a first beam formed by extending the first corner of the second electrode in a direction away from the first side; a second beam formed by extending the first beam in a direction toward the second side; a third beam formed by extending the second beam in a direction toward the third side; and a fourth beam formed by extending the third beam in a direction toward the fourth side; wherein the fourth beam is connected to the first ground line, and the first angle is the angle between the first side and the fourth side; The second hinge includes: a fifth beam formed by the second corner of the second electrode extending in a direction away from the third side; a sixth beam formed by the fifth beam extending in a direction toward the fourth side; a seventh beam formed by the sixth beam extending in a direction toward the first side; and an eighth beam formed by the seventh beam extending in a direction toward the second side; wherein the eighth beam is connected to the second ground line, and the second angle is the angle between the second side and the third side.

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