Display panel and display device

Abstract

The embodiment of the present invention discloses a display panel and a display device. The display panel includes a substrate; a first transistor and a second transistor, the first transistor and the second transistor are formed on the substrate, the first transistor includes a first active layer, a first gate, a first source and a first drain, the first active layer includes silicon; the second transistor includes a second active layer, a second gate, a second source and a second drain, the second active layer includes an oxide semiconductor; the second active layer is located on the side of the first active layer away from the substrate; a first insulating layer and a second insulating layer, the first insulating layer is located on the side of the second active layer away from the substrate, and is located between the second gate and the second active layer, the second insulating layer is located on the side of the second active layer facing the substrate, and the concentration of hydrogen in the first insulating layer is greater than the concentration of hydrogen in the second insulating layer. This is to improve the stability of the second transistor and ensure the good performance of the driving circuit.

Description

Technical Field

[0001] Embodiments of the present invention relate to the field of display technology, and in particular to a display panel and a display device. Background Art

[0002] Organic Light-Emitting Diode (OLED) display panels are widely popular because of their advantages such as self-luminescence, high contrast, thin thickness, fast response speed, and applicability to flexible panels.

[0003] The OLED element of the OLED display panel is a current-driven element, and a corresponding pixel circuit and a driving circuit need to be set. The driving circuit provides a driving signal to the pixel circuit so that the pixel circuit provides a driving current to the OLED element and drives the OLED element to emit light. Transistors are provided in the driving circuit and pixel circuit of the OLED display panel. Transistors often use oxide semiconductors, such as indium gallium zinc oxide (IGZO) as an active layer to reduce leakage in the transistor. However, the stability of IGZO transistors in the prior art is poor, which in turn affects the influence of the driving circuit and / or pixel circuit. Summary of the invention

[0004] The embodiments of the present invention provide a display panel and a display device, so as to improve the stability of the second transistor and ensure good performance of the driving circuit.

[0005] In a first aspect, an embodiment of the present invention provides a display panel, the display panel comprising

[0006] substrate substrate;

[0007] a first transistor and a second transistor, wherein the first transistor and the second transistor are formed on the substrate, the first transistor comprises a first active layer, a first gate, a first source and a first drain, the first active layer comprises silicon; the second transistor comprises a second active layer, a second gate, a second source and a second drain, the second active layer comprises an oxide semiconductor; the second active layer is located on a side of the first active layer away from the substrate;

[0008] a first insulating layer and a second insulating layer, wherein the first insulating layer is located on a side of the second active layer away from the substrate and between the second gate and the second active layer, and the second insulating layer is located on a side of the second active layer facing the substrate, wherein:

[0009] The concentration of hydrogen in the first insulating layer is greater than the concentration of hydrogen in the second insulating layer;

[0010] The display panel includes a pixel circuit and a driving circuit providing a driving signal to the pixel circuit, wherein the driving circuit includes the second transistor, and the pixel circuit includes the first transistor or the driving circuit includes the first transistor.

[0011] In a second aspect, an embodiment of the present invention further provides a display device, which includes the display panel described in the first aspect.

[0012] The display panel provided by the embodiment of the present invention includes a first crystal and a second transistor, the first active layer of the first transistor includes silicon, the second active layer of the second transistor includes an oxide semiconductor, the first insulating layer is located on the side of the second active layer away from the substrate, and the second insulating layer is located on the side of the second active layer close to the substrate. By setting the concentration of hydrogen elements in the first insulating layer to be greater than the concentration of hydrogen elements in the second insulating layer, that is, by appropriately increasing the concentration of hydrogen elements in the first insulating layer, it is beneficial to repair defects in the first insulating layer; by appropriately reducing the concentration of hydrogen elements in the second insulating layer, it is prevented that hydrogen elements diffuse into the second active layer, avoid affecting the second active layer, improve the stability of the second transistor, and ensure good performance of the driving circuit. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 is a schematic structural diagram of a display panel provided by an embodiment of the present invention;

[0014] Figure 2 is a structural schematic diagram of another display panel provided by an embodiment of the present invention;

[0015] Figure 3 is a structural schematic diagram of another display panel provided by an embodiment of the present invention;

[0016] Figure 4 is a structural schematic diagram of another display panel provided by an embodiment of the present invention;

[0017] Figure 5 is a structural schematic diagram of another display panel provided by an embodiment of the present invention;

[0018] Figure 6 is a structural schematic diagram of another display panel provided by an embodiment of the present invention;

[0019] Figure 7 is a structural schematic diagram of another display panel provided by an embodiment of the present invention;

[0020] Figure 8 is a structural schematic diagram of another display panel provided by an embodiment of the present invention;

[0021] Fig. 9 is a structural schematic diagram of another display panel provided by an embodiment of the present invention;

[0022] Fig.10 is a structural schematic diagram of another display panel provided by an embodiment of the present invention;

[0023] Fig.11 is a structural schematic diagram of another display panel provided by an embodiment of the present invention;

[0024] Fig.12 is a structural schematic diagram of another display panel provided by an embodiment of the present invention;

[0025] Fig.13 is a structural schematic diagram of another display panel provided by an embodiment of the present invention;

[0026] Fig.14 It is a structural schematic diagram of a display device provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0027] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the present invention, rather than to limit the present invention. It should also be noted that, for ease of description, only parts related to the present invention, rather than all structures, are shown in the accompanying drawings.

[0028] Figure 1 It is a schematic diagram of the structure of a display panel, such as Figure 1 As shown, the display panel 100 includes at least two types of transistors formed on a substrate 10. The at least two types of transistors include silicon, which may be polysilicon, for example, a transistor 20 having an active layer made of low temperature polysilicon (LTPS) material and a transistor 30 having an active layer made of an oxide semiconductor material.

[0029] Low-temperature polysilicon transistors have the advantages of high carrier mobility, fast response, and low power consumption, and oxide semiconductor transistors have the advantage of low leakage current. Therefore, when the display panel 100 includes both a transistor 20 with LTPS material as the active layer 21 and a transistor 30 with oxide semiconductor material as the active layer 31, it can be ensured that the display panel 100 has better performance.

[0030] However, low-temperature polysilicon materials have many defects, so the defects can be reduced by increasing the concentration of hydrogen in the insulating layer 48 on the side of the active layer 21 away from the substrate 10. However, since oxide semiconductor materials are very sensitive to hydrogen, when the insulating layers 40 and 41 on both sides of the active layer 31 are provided, the insulating layers 40 and 41 are made of materials that do not contain hydrogen, such as silicon oxide. However, the inventors have found that after silicon oxide is formed, some oxygen atoms may have bonds that are suspended, thereby forming defects, which may have an impact on the capture of carriers in the transistor 30, thereby affecting the stability of the transistor 30.

[0031] Based on the above technical problems, the inventors further studied the technical solutions of the embodiments of the present invention. Specifically, the embodiments of the present invention provide a display panel, a substrate;

[0032] A first transistor and a second transistor, the first transistor and the second transistor are formed on a substrate, the first transistor includes a first active layer, a first gate, a first source and a first drain, the first active layer includes silicon; the second transistor includes a second active layer, a second gate, a second source and a second drain, the second active layer includes an oxide semiconductor; the second active layer is located on a side of the first active layer away from the substrate;

[0033] A first insulating layer and a second insulating layer, the first insulating layer is located on a side of the second active layer away from the substrate and between the second gate and the second active layer, and the second insulating layer is located on a side of the second active layer facing the substrate, wherein:

[0034] The concentration of hydrogen in the first insulating layer is greater than the concentration of hydrogen in the second insulating layer;

[0035] The display panel includes a pixel circuit and a driving circuit for providing a driving signal to the pixel circuit, wherein the driving circuit includes a second transistor, and the pixel circuit includes a first transistor or the driving circuit includes the first transistor. The concentrations defined in this application are atomic concentrations, i.e., atomic content per unit area, unless otherwise specified.

[0036] By adopting the above technical solution, the first insulating layer and the second insulating layer are both provided with a small amount of hydrogen, and the concentration of hydrogen in the first insulating layer is greater than that in the second insulating layer, that is, the concentration of hydrogen in the first insulating layer is appropriately increased, which is beneficial to repairing defects in the first insulating layer; the concentration of hydrogen in the second insulating layer is appropriately reduced to prevent hydrogen from diffusing into the second active layer, avoid affecting the second active layer, improve the stability of the second transistor, and ensure good performance of the driving circuit.

[0037] The above is the core idea of ​​the present invention. The technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0038] Figure 2 is a schematic diagram of the structure of a display panel provided by an embodiment of the present invention, such as Figure 2 As shown, the display panel 100 provided by the embodiment of the present invention includes a substrate 10; a first transistor 20 and a second transistor 30, the first transistor 20 and the second transistor 30 are formed on the substrate 10, the first transistor 20 includes a first active layer 21, a first gate 22, a first source 23 and a first drain 24, the first active layer 21 includes silicon; the second transistor 30 includes a second active layer 31, a second gate 32, a second source 33 and a second drain 34, the second active layer 31 includes an oxide semiconductor; the second active layer 31 is located on the side of the first active layer 21 away from the substrate 10; a first insulating layer 40 and a second insulating layer 41, the first insulating layer 40 is located on the side of the second active layer 31 away from the substrate 10, and is located between the second gate 32 and the second active layer 31, and the second insulating layer 41 is located on the side of the second active layer 31 facing the substrate 10, wherein the concentration of hydrogen in the first insulating layer 40 is greater than the concentration of hydrogen in the second insulating layer 41; the display panel 100 includes a pixel circuit ( Figure 2 ) and a driving circuit 50 for providing a driving signal to the pixel circuit, wherein the driving circuit 50 includes at least one second transistor 30, Figure 2 The following description will be made by taking an example where the driving circuit 50 includes both the first transistor 20 and the second transistor 30 .

[0039] For example, Figure 2 As shown, the display panel 100 includes a display area AA and a non-display area NAA, wherein the non-display area NAA is located at least on one side of the display area AA. Figure 2 Take the non-display area NAA located on one side of the display area AA as an example for explanation, wherein the driving circuit 50 is located in the non-display area NAA, and the pixel circuit ( Figure 2 The pixel circuit 50 (not shown) provides a driving signal to drive the light-emitting element in the same sub-pixel to emit light, thereby realizing the display of the display panel 100. It should be noted that the specific structures of the driving circuit 50 and the pixel circuit are not limited in this embodiment.

[0040] It should be noted that in the present application, the first transistor 20 and the second transistor 30 can be transistors in a driving circuit, that is, the driving circuit 50 includes the first transistor 20 or the second transistor 30; in addition, the first transistor 20 and the second transistor 30 can be transistors in a pixel circuit, that is, the pixel circuit includes the first transistor 20 or the second transistor 30. If the second transistor 30 is located in the pixel circuit, it can be a driving transistor or a switching transistor.

[0041] For example, Figure 2 As shown, the driving circuit 50 includes a first transistor 20 and a second transistor 30. The first transistor 20 can be a bottom-gate transistor or a top-gate transistor. Figure 2 Take the first transistor 20 as a top-gate transistor as an example, that is, the first gate 22 is located on the side of the first active layer 21 away from the substrate 10. The second insulating layer 41 is located on the side of the first gate 22 away from the substrate 10, the second active layer 31 is located on the side of the second insulating layer 41 away from the substrate 10, the first insulating layer 40 is located on the side of the second active layer away from the substrate 10, the second gate 32 is located on the side of the first insulating layer 40 away from the substrate 10, the first source 23, the first drain 24, the second source 33 and the second drain 34 are all located on the side of the second gate 32 away from the substrate 10, and are insulated from the second gate 32, wherein the first source 23, the first drain 24, the second source 33 and the second drain 34 are arranged in the same layer, so that the process steps can be simplified. In addition, the first active layer 21 in the first transistor 20 includes silicon, which may be polysilicon, that is, the first active layer 21 is a polysilicon active layer, for example, a low temperature polysilicon (LTPS) active layer. The second active layer 31 in the second transistor 30 includes an oxide semiconductor, that is, the second active layer 31 is an oxide semiconductor active layer, for example, an IGZO active layer. Low temperature polysilicon thin film transistors have the advantages of high carrier mobility, fast response, and low power consumption, and oxide semiconductor thin film transistors have the advantage of low leakage current. In this way, when the driving circuit 50 includes the first transistor 20 and the second transistor 30, the driving circuit 50 has the advantages of high carrier mobility, fast response, low power consumption and low leakage current, so as to ensure that the driving circuit 50 has good performance and improve the display performance of the display panel 100.

[0042] Further, considering that the first insulating layer 40 is an insulating layer located between the second gate 32 and the second active layer 31, wherein the material of the first insulating layer 40 is generally silicon oxide, but after the silicon oxide is formed, there may be some oxygen atoms whose bonds are in a dangling state, thereby forming defects, which have effects such as capturing the carriers in the second transistor 30, and further affect the stability of the second transistor 30. In this embodiment, by setting the concentration of hydrogen elements in the first insulating layer 40 to be greater than the concentration of hydrogen elements in the second insulating layer 41, on the one hand, by appropriately increasing the concentration of hydrogen elements in the first insulating layer 40, the defects in the first insulating layer 40 are repaired, the defects in the first insulating layer 40 are prevented from capturing the carriers in the second transistor 30, and the withstand voltage performance of the first insulating layer 40 is improved; on the other hand, by appropriately reducing the concentration of hydrogen elements in the second insulating layer 41, excessive hydrogen elements are prevented from diffusing into the second active layer 31, and the second active layer 31 is avoided from being affected, thereby improving the stability of the second transistor 30 and further ensuring the good performance of the driving circuit 50.

[0043] It should be noted that the first insulating layer 40 is located on the side of the second active layer 32 away from the base substrate 10, and is located between the second gate 32 and the second active layer 31, and the second insulating layer 41 is located on the side of the second active layer 31 facing the base substrate 10. The first insulating layer 40 and the second insulating layer 41 may be arranged in contact with the second active layer 31, for example, see Figure 1 ; It is also possible that the first insulating layer 40 and / or the second insulating layer 41 are not in direct contact with the second active layer 31, that is, without affecting the performance of the second transistor 30, other insulating layers are arranged between the first insulating layer 40 and the second active layer 31, and / or other insulating layers are arranged between the second insulating layer 41 and the second active layer 31. This embodiment does not specifically limit this.

[0044] Optionally, the concentration of hydrogen in the first insulating layer 40 is C1, and the concentration of hydrogen in the second insulating layer 41 is C2, wherein C1=n×C2, 1<n<5. By setting the concentration of hydrogen in the first insulating layer 40 and the concentration of hydrogen in the second insulating layer 41 to satisfy this relationship, the stability of the second transistor 30 is ensured.

[0045] Optionally, the concentration of hydrogen in the first insulating layer 40 is C1, then 2×10 21 (atom / cm 3 )≤ C1≤1×10 22 (atom / cm 3 ). The concentration of hydrogen in the first insulating layer 40 is set to 2×10 21 (atom / cm 3 ) to 1×1022 (atom / cm 3 ), that is, the defects inside the first insulating layer 40 will not be repaired because the concentration of hydrogen in the first insulating layer 40 is too low, and the hydrogen in the first insulating layer 40 will not diffuse into the second active layer 31 and affect the performance of the second transistor 30 because the concentration of hydrogen in the first insulating layer 40 is too high. Therefore, in this embodiment, the concentration C1 of hydrogen in the first insulating layer 40 is preferably set to 2×10 21 (atom / cm 3 )≤C1≤1×10 22 (atom / cm 3 ) so as to repair the internal defects without affecting the second active layer 31 and improve the stability of the second transistor 30.

[0046] Optional, continue to see Figure 2 The display panel 100 provided in an embodiment of the present invention further includes a third insulating layer 42 , which is located on the side of the second gate 32 away from the base substrate 10 ; wherein the concentration of hydrogen elements in the third insulating layer 42 is less than the concentration of hydrogen elements in the first insulating layer 40 .

[0047] Since the second transistor 30 is very sensitive to hydrogen, the above content has mentioned that the concentration of hydrogen in the first insulating layer 40 is greater than that in the second insulating layer 41, but the hydrogen in the first insulating layer 40 is only used to repair defects in the first insulating layer 40 to prevent defects from capturing carriers in the transistor, and its concentration is very small. In this embodiment, the concentration of hydrogen in the third insulating layer 42 on the side of the second gate 32 away from the substrate 10 is set to be less than the concentration of hydrogen in the first insulating layer 40, that is, the concentration of hydrogen in the third insulating layer 42 is less, so that the third insulating layer 42 provides protection for the second transistor 30 to prevent excessive hydrogen from entering the second transistor 30 and affecting the performance of the second transistor 30.

[0048] Optionally, the concentration of hydrogen elements in the first insulating layer 40 is C1, the concentration of hydrogen elements in the second insulating layer 41 is C2, and the concentration of hydrogen elements in the third insulating layer 42 is C3, wherein C1≤2C2-C3.

[0049] Along the direction perpendicular to the base substrate 110 , the first insulating layer 40 and the second insulating layer 41 are respectively located on both sides of the second gate 32 of the second transistor 30 , that is, the first insulating layer 40 and the second insulating layer 41 are both gate insulating layers. After the film is formed, some bonds of oxygen atoms may be suspended, thereby forming defects and affecting the second transistor 30 . Therefore, in this embodiment, C1≤2C2-C3 is set, that is, C1-C2≤C2-C3. That is to say, although the concentration of hydrogen elements in the first insulating layer 40 is greater than the concentration of hydrogen elements in the second insulating layer 41, the difference between the concentration of hydrogen elements in the first insulating layer 40 and the concentration of hydrogen elements in the second insulating layer 41 is small. In this way, the defects inside the first insulating layer 40 are repaired by the hydrogen elements, and the defects inside the second insulating layer 41 are repaired by the hydrogen elements, thereby improving the stability of the second transistor 30. At the same time, on the basis that the concentration of hydrogen elements in the second insulating layer 41 is less than the concentration of hydrogen elements in the first insulating layer 40, the concentration of hydrogen elements in the second insulating layer 41 minus the concentration of hydrogen elements in the third insulating layer 42 is still greater than the difference between the concentration of hydrogen elements in the first insulating layer 40 and the concentration of hydrogen elements in the second insulating layer 41, thereby indicating that the hydrogen content of the third insulating layer 42 is lower. In this way, the third insulating layer 42 provides protection for the second transistor 30 to prevent excessive hydrogen elements from entering the second transistor 30 and affecting the performance of the second transistor 30.

[0050] Optional, Figure 3 It is a structural schematic diagram of another display panel provided by an embodiment of the present invention. As shown in Figure 3, the pixel circuit 60 includes a third transistor 70, the third transistor 70 includes a third active layer 71, a third source 73, a third drain 74 and a fourth gate 72, and the third active layer 73 includes an oxide semiconductor; the display panel 100 also includes a fourth insulating layer 43 and a fifth insulating layer 44, the fourth insulating layer 43 is located on the side of the third active layer 71 away from the base substrate 10, and is located between the third active layer 73 and the fourth gate 72, and the fifth insulating layer 44 is located on the side of the third active layer 71 toward the base substrate 10; wherein the concentration of hydrogen element in the fourth insulating layer 43 is greater than the concentration of hydrogen element in the fifth insulating layer 44.

[0051] For example, Figure 3As shown, the display panel 100 includes a display area AA and a non-display area NAA, the driving circuit 50 is located in the non-display area NAA, and the pixel circuit 60 is located in the display area AA. The pixel circuit 60 includes a third transistor 70, and the third active layer 71 in the third transistor 70 includes an oxide semiconductor, that is, the third active layer 71 is an oxide semiconductor active layer, for example, an IGZO active layer. The leakage current of the oxide semiconductor thin film transistor is very small, which can ensure that the leakage current is small during the working process of the pixel circuit 60, that is, in this embodiment, not only the second transistor 30 in the driving circuit 50 is set as an oxide semiconductor transistor, but also the third transistor 70 in the pixel circuit 70 is set as an oxide semiconductor transistor. In this way, the performance of the driving circuit 50 and the pixel circuit 30 is good at the same time, and the display performance of the display panel 100 is further improved.

[0052] Furthermore, in this embodiment, by setting the concentration of hydrogen elements in the fourth insulating layer 43 to be greater than the concentration of hydrogen elements in the fifth insulating layer 44, on the one hand, the concentration of hydrogen elements in the fourth insulating layer 43 is appropriately increased to repair the defects in the fourth insulating layer 43; on the other hand, the concentration of hydrogen elements in the fifth insulating layer 44 is appropriately reduced to prevent hydrogen elements from diffusing into the third active layer 71 and affecting the third active layer 71, thereby improving the stability of the third transistor 70 and ensuring good performance of the pixel circuit 60.

[0053] It should be noted that the fourth insulating layer 43 can be disposed on the same layer as the first insulating layer 40, and the fifth insulating layer 44 can be disposed on the same layer as the second insulating layer 41; or the fourth insulating layer 43 is not disposed on the same layer as the first insulating layer 40, and the fifth insulating layer 44 is not disposed on the same layer as the second insulating layer 41, wherein: Figure 3 The fourth insulating layer 43 is provided in the same layer as the first insulating layer 40, and the fifth insulating layer 44 is provided in the same layer as the second insulating layer 41. In addition, in this embodiment, by providing the third source 73 and the third drain 74 in the third transistor 70 in the same layer as the second source 33 and the second drain 34 in the second transistor 30 and the first source 23 and the first drain 24 in the first transistor 20, the process steps can be simplified and the manufacturing efficiency of the display panel can be improved.

[0054] Optionally, the third transistor 70 is a switching transistor of the pixel circuit 60, and the concentration of hydrogen elements in the first insulating layer 41 is greater than the concentration of hydrogen elements in the fourth insulating layer 43, that is, the concentration of hydrogen elements in the gate insulating layer of the second transistor 30 in the driving circuit 50 is greater than the concentration of hydrogen elements in the gate insulating layer of the third transistor 70 in the pixel circuit 70. This is because the concentration of hydrogen in the gate insulating layer of the oxide semiconductor transistor will affect the state of the oxide semiconductor transistor when it is turned on and off. When the oxide semiconductor transistor is used as an N-type transistor, when the concentration of hydrogen in the gate insulating layer is relatively large, when the gate of the transistor receives a high-level signal, that is, when the transistor is turned on, it is beneficial to the stability of the transistor, and when the gate of the transistor receives a low-level signal, that is, when the transistor is turned off, it is not beneficial to the stability of the transistor; and the display panel 100 may be used in a low-frequency refresh situation. When the frequency is low, the switching transistor in the pixel circuit 60 remains off for a longer time. Therefore, in this embodiment, the hydrogen concentration in the gate insulating layer of the switching transistor of the pixel circuit 60 is set to be smaller, and the turn-on time of the transistor in the driving circuit 50 is longer. Therefore, the concentration of hydrogen in the gate insulating layer of the second transistor 30 in the driving circuit 50 is set to be larger.

[0055] It should be noted that when the first insulating layer 40 and the fourth insulating layer 43 are located in the same film layer, for example, an ion implantation process can be used to implant different concentrations of hydrogen elements into the first insulating layer 40 and the fourth insulating layer 43 respectively, so that the concentration of hydrogen elements in the first insulating layer 40 is greater than the concentration of hydrogen elements in the fourth insulating layer 43.

[0056] Optionally, the third transistor 70 is a driving transistor of the pixel circuit 60, and the concentration of hydrogen in the first insulating layer 40 is less than the concentration of hydrogen in the fourth insulating layer 43. That is, the concentration of hydrogen in the gate insulating layer of the second transistor 30 in the driving circuit 50 is less than the concentration of hydrogen in the gate insulating layer of the third transistor 70 in the pixel circuit 70. Similarly, since the concentration of hydrogen in the gate insulating layer of the oxide semiconductor transistor affects the state of the oxide semiconductor transistor when it is turned on and off, and when the oxide semiconductor transistor is used as an N-type transistor, when the concentration of hydrogen in the gate insulating layer is large, when the gate of the transistor receives a high-level signal, that is, when the transistor is turned on, it is beneficial to the stability of the transistor, and when the gate of the transistor receives a low-level signal, that is, when the transistor is turned off, it is not beneficial to the stability of the transistor; and the display panel 100 may be applied to the case of low-frequency refresh. When the low-frequency refresh is used, the driving transistor in the pixel circuit 60 remains turned on for a long time. In order to ensure good stability, therefore, in this embodiment, the concentration of hydrogen in the gate insulating layer of the driving transistor of the pixel circuit 60 is set to be larger.

[0057] Optional, Figure 4 It is a structural schematic diagram of another display panel provided by an embodiment of the present invention. As shown in Figure 4, the pixel circuit 60 includes a fourth transistor 80, the fourth transistor 80 includes a fourth active layer 81, a fourth source 83, a fourth drain 84 and a fifth gate 85, and the fourth active layer 81 includes an oxide semiconductor; the display panel 100 also includes a sixth insulating layer 45 and a seventh insulating layer 46, the sixth insulating layer 45 is located on the side of the fourth active layer 81 away from the base substrate 10, and is located between the fourth active layer 81 and the fifth gate 85, and the seventh insulating layer 46 is located on the side of the fourth active layer 81 toward the base substrate 10; wherein the concentration of hydrogen element in the sixth insulating layer 45 is greater than the concentration of hydrogen element in the seventh insulating layer 46.

[0058] It should be noted that the pixel circuit 60 provided in the embodiment of the present invention may include two transistors (2T) or seven transistors (7T), etc. The embodiment of the present invention does not limit the specific structure of the pixel circuit 60. Figure 4 Only two transistors are shown by way of example.

[0059] Specifically, the pixel circuit 60 also includes a fourth transistor 80, and the fourth active layer 81 in the fourth transistor 80 may also be an oxide semiconductor active layer, for example, an IGZO active layer. That is, the two transistors in the pixel circuit 60 in this embodiment are both oxide semiconductor transistors. In addition, in this embodiment, by setting the concentration of hydrogen elements in the sixth insulating layer 45 to be greater than the concentration of hydrogen elements in the seventh insulating layer 46, on the one hand, the concentration of hydrogen elements in the sixth insulating layer 45 is appropriately increased to repair its internal defects; on the other hand, by appropriately reducing the concentration of hydrogen elements in the seventh insulating layer 46, the hydrogen elements are prevented from diffusing to the fourth active layer 81 and affecting the fourth active layer 81, thereby improving the stability of the fourth transistor 80 and further ensuring the good performance of the pixel circuit 60.

[0060] It should be noted that the sixth insulating layer 45, the fourth insulating layer 43 and the first insulating layer 40 can be located in the same film layer, or in different film layers, or any two insulating layers can be located in the same film layer; similarly, the seventh insulating layer 46, the fifth insulating layer 44 and the second insulating layer 41 can be located in the same film layer, or in different film layers, or any two insulating layers can be located in the same film layer. Figure 4The sixth insulating layer 45, the fourth insulating layer 43 and the first insulating layer 40 are arranged in the same layer, and the seventh insulating layer 46, the fifth insulating layer 44 and the second insulating layer 41 are arranged in the same layer. In addition, in this embodiment, the fourth source 83 and the fourth drain 84 in the fourth transistor 80, the third source 73 and the third drain 74 in the third transistor 70, the second source 33 and the second drain 34 in the second transistor 30, and the first source 23 and the first drain 24 in the first transistor 20 are arranged in the same layer, which can simplify the process steps and improve the manufacturing efficiency of the display panel.

[0061] Optionally, the third transistor 70 is a driving transistor of the pixel circuit 60, and the fourth transistor 80 is a switching transistor of the pixel circuit 60, wherein the concentration of hydrogen in the fourth insulating layer 43 is greater than the concentration of hydrogen in the sixth insulating layer 45. This is because the display panel 100 may be applied to a low-frequency refresh situation, and when the low-frequency refresh is applied, the driving transistor in the pixel circuit 60 remains turned on for a longer time. Therefore, in this embodiment, the hydrogen concentration in the gate insulating layer of the driving transistor of the pixel circuit 60 is set to be larger, which is beneficial to the stability of the third transistor 70.

[0062] It should be noted that when the sixth insulating layer 45 and the fourth insulating layer 43 are located in the same film layer, for example, different concentrations of hydrogen elements can be injected into the sixth insulating layer 45 and the fourth insulating layer 43 respectively by using an ion implantation process, so that the concentration of hydrogen elements in the fourth insulating layer 43 is greater than the concentration of hydrogen elements in the sixth insulating layer 45.

[0063] When the active layer of the transistor in the display panel 100 includes an oxide semiconductor, the concentration of hydrogen in the insulating layer near the active layer can also be set to be gradual, so that the transistor including the oxide semiconductor active layer maintains good stability. The second transistor 30 will be taken as an example below to illustrate the change in the concentration of hydrogen in the insulating layer near the second active layer 31. It can be understood that although the second transistor 30 is taken as an example, when the third transistor 70 in the pixel circuit 60 includes a transistor with an oxide semiconductor active layer, and the fourth transistor 80 includes a transistor with an oxide semiconductor active layer, the insulating layer near the third active layer 71 and the insulating layer near the fourth active layer 81 still satisfy such a relationship, and the following embodiments will not be repeated.

[0064] Optional, see Figure 2In the first insulating layer 40, the concentration of hydrogen elements on the side close to the second active layer 31 is less than that on the side away from the second active layer 31; in the second insulating layer 41, the concentration of hydrogen elements on the side close to the second active layer 31 is less than that on the side away from the second active layer 31. The advantage of this arrangement is that the defects inside the first insulating layer 40 and the second insulating layer 41 can be repaired by hydrogen elements to prevent the defects from capturing the carriers in the second transistor 30, and at the same time, the hydrogen elements in the first insulating layer 40 and the second insulating layer 41 can be prevented from diffusing into the second active layer 31, ensuring that the second active layer 31 will not be affected by more hydrogen elements.

[0065] Optionally, in the third insulating layer 42, the concentration of hydrogen elements on the side close to the second gate 32 is less than the concentration of hydrogen elements on the side away from the second gate 32. That is, the concentration of hydrogen elements on the side closer to the second gate 32 in the third insulating layer 42 close to the second gate 32 is lower, so as to ensure that the second transistor 30 has good performance.

[0066] Optional, continue to see Figure 2 The display panel 100 provided in the embodiment of the present invention further includes an eighth insulating layer 47, which is located between the first gate electrode 22 and the second insulating layer 41. The concentration of hydrogen in the eighth insulating layer 47 is greater than the concentration of hydrogen in the second insulating layer 41. In this way, it is possible to ensure that the hydrogen element repairs the defects in the first active layer 21, and at the same time prevent the hydrogen element from diffusing into the second active layer 31 and affecting the second active layer 31. Based on this solution, optionally, Figure 5 The display panel 100 provided by the embodiment of the present invention further includes a ninth insulating layer 48, which is located between the second insulating layer 41 and the eighth insulating layer 47, wherein the concentration of hydrogen in the ninth insulating layer 48 is less than that in the eighth insulating layer 47. In this embodiment, by setting the ninth insulating layer 48 as a transition insulating layer, that is, the concentrations of hydrogen in the ninth insulating layer 48, the eighth insulating layer 47 and the second insulating layer 41 are gradually reduced, so that the hydrogen can be ensured to repair the defects in the first active layer 21, and at the same time, the hydrogen can be prevented from diffusing into the second active layer 31 and affecting the second active layer 31. Optionally, along the direction from the first active layer 21 to the second active layer 31, the concentrations of hydrogen in the eighth insulating layer 47 and the ninth insulating layer 48 are both reduced in a gradient, and the concentration of hydrogen on the side of the ninth insulating layer 48 close to the eighth insulating layer 47 is less than the concentration of hydrogen on the side of the eighth insulating layer 47 close to the ninth insulating layer 48.

[0067] The above is an explanation of the case where the concentration of hydrogen in the same insulating layer is gradually changed along the direction perpendicular to the substrate 10. In other optional embodiments, multiple insulating layers may be provided, each insulating layer has the same concentration, and the concentration of hydrogen in adjacent insulating layers is different, so as to achieve a gradual effect. For example, Figure 6 is a schematic diagram of the structure of another display panel provided by an embodiment of the present invention, such as Figure 6 As shown, the first insulating layer 40 includes a first sub-insulating layer 401 and a second sub-insulating layer 402, and the first sub-insulating layer 401 is located on a side of the second sub-insulating layer 402 close to the second active layer 31; wherein, the concentration of hydrogen elements in the first sub-insulating layer 401 is the same, and the concentration of hydrogen elements in the second sub-insulating layer 402 is the same, but the concentration of hydrogen elements in the first sub-insulating layer 401 is less than the concentration of hydrogen elements in the second sub-insulating layer 402; and the concentration of hydrogen elements in the first sub-insulating layer 401 is greater than the concentration of hydrogen elements in the second insulating layer 41. The advantage of such a setting is that the defects inside the first sub-insulating layer 401 and the second sub-insulating layer 402 can be repaired by the hydrogen elements in the second sub-insulating layer 402, so as to prevent the defects from capturing the carriers in the second transistor 30, and at the same time, since the concentration of hydrogen elements in the first sub-insulating layer 401 is low, the hydrogen elements can be prevented from diffusing into the second active layer 31, so as to ensure that the second active layer 31 will not be affected by the hydrogen elements. The concentration of hydrogen in the first sub-insulating layer 401 is greater than that in the second insulating layer 41, which prevents the hydrogen in the second insulating layer 41 from diffusing into the second active layer 31, further ensuring that the second active layer 31 is not affected by the hydrogen. It should be noted that other insulating layers may also be arranged in this way, and other film layers will not be described in detail.

[0068] The following will specifically introduce how to further ensure good performance of each transistor in the driving circuit and / or pixel circuit by adjusting the concentration of oxygen elements or the number of oxygen atoms in the insulating layer.

[0069] Optionally, the first insulating layer 40 includes silicon oxide SiO X The second insulating layer 41 includes silicon oxide SiO y , wherein x is the ratio of the number of oxygen atoms to the number of silicon atoms in the first insulating layer 40 , y is the ratio of the number of oxygen atoms to the number of silicon atoms in the second insulating layer 41 , and x<y.

[0070] Exemplarily, the materials of the first insulating layer 40 and the second insulating layer 41 both include silicon oxide. However, since the first insulating layer 40 is an insulating layer of the second gate 32, the concentration of hydrogen in the first insulating layer 40 is appropriately increased to repair the internal fixation thereof, and the second insulating layer 41 is an insulating layer close to the second active layer 32, and the concentration of oxygen is appropriately increased to provide sufficient oxygen to the second active layer 32, so as to ensure good performance of the second transistor 30. Optionally, the concentration of oxygen in the first insulating layer 40 is less than the concentration of oxygen in the second insulating layer 41.

[0071] In the present embodiment, the concentration of oxygen in the first insulating layer 40 is appropriately reduced, and the concentration of hydrogen is appropriately increased. Thus, even if the first insulating layer 40 is silicon oxide, and there are dangling bonds in oxygen atoms during film formation, thereby forming defects, since the concentration of oxygen in the first insulating layer 40 is relatively low, there are fewer dangling bonds in oxygen atoms, and even if they exist, the defects inside can be repaired by the hydrogen in the first insulating layer 40. Furthermore, the oxygen in the second insulating layer 41 is appropriately increased, and the oxygen in the second insulating layer 41 provides more oxygen to the second active layer 31, thereby further improving the stability of the second transistor 30.

[0072] Optionally, the ratio of the concentration of oxygen element to the concentration of silicon element in the first insulating layer 40 is A, and the ratio of the concentration of oxygen element to the concentration of silicon element in the second insulating layer 41 is B, wherein A<B.

[0073] In this embodiment, when the first insulating layer 40 and the second insulating layer 41 both include oxygen and silicon elements, the concentration of oxygen in the first insulating layer 40 is appropriately reduced to reduce the presence of dangling bonds in oxygen atoms; the oxygen in the second insulating layer 41 is appropriately increased, and the oxygen in the second insulating layer 41 provides more oxygen to the second active layer 31, thereby improving the stability of the second transistor 30.

[0074] Optionally, the ratio of the concentration of oxygen element to the concentration of silicon element in the first insulating layer 40 is A, and the ratio of the concentration of oxygen element to the concentration of silicon element in the second insulating layer 41 is B; the concentration of hydrogen element in the first insulating layer 40 is C1, and the concentration of hydrogen element in the second insulating layer 41 is C2, wherein C1×(A-1)≤ C2×(B-1), that is, (A-1) / (B-1)≤C2 / C1, that is, the change in the oxygen-silicon ratio in the first insulating layer 40 and the second insulating layer 41 is larger, and the change in the concentration of hydrogen element will be smaller. In this way, the concentration of oxygen element in the first insulating layer 40 is smaller, reducing the situation of dangling bonds in oxygen atoms; the oxygen element in the second insulating layer 41 is appropriately increased, and more oxygen element is provided to the second active layer 31 through the oxygen element in the second insulating layer 41; and the concentration of oxygen element in the first insulating layer 40 is relatively low, and the oxygen concentration in the second insulating layer 41 is appropriately increased, assisted by the method of appropriately increasing the hydrogen concentration in the first insulating layer 40 within a reasonable range, to achieve comprehensive regulation and control to achieve the purpose of improving the stability of the second transistor 30.

[0075] Optionally, the concentration ratio of oxygen element in the third insulating layer 42 to silicon element is C, wherein A<C<B. By setting the concentration ratio of oxygen element in the third insulating layer 42 to the concentration of oxygen in the first insulating layer 40 , the second transistor 30 is protected.

[0076] Optionally, the concentration of hydrogen elements in the third insulating layer 42 is C3, wherein C2×(C-1)≥ C3×(B-1), i.e., (C-1) / (B-1)≥C3 / C2. That is to say, compared with the oxygen-silicon ratio, the concentration of hydrogen elements in the third insulating layer 42 and the second insulating layer 41 is reduced to a greater extent, so as to protect the second transistor 30 by the third insulating layer 42 having a very low hydrogen concentration.

[0077] It is understandable that, since the above example is only described with respect to the setting of the concentration of oxygen in the first insulating layer 41, the second insulating layer 42 and the third insulating layer 43 near the second transistor 30, when the display panel 100 further includes the third transistor 70 and the fourth transistor 80, for example, Figure 4 The fourth insulating layer 43, the fifth insulating layer 44 and the insulating layer 412 on the side of the fourth insulating layer 43 away from the fifth insulating layer 44 are also applicable to the above rules; and the sixth insulating layer 45, the seventh insulating layer 46 and the insulating layer 411 on the side of the sixth insulating layer 45 away from the seventh insulating layer 46 are also applicable to the above rules.

[0078] The above embodiments are all described by taking the case where the second transistor 30 is a top-gate transistor as an example. Optionally, the second transistor 30 may also be a dual-gate transistor. When the second transistor 30 is a dual-gate transistor, in addition to satisfying the rule of the hydrogen element concentration in the insulating layer in the above embodiments, it may also be individually set according to the characteristics of the dual-gate transistor itself.

[0079] Optional, Figure 7 It is a structural schematic diagram of another display panel provided by an embodiment of the present invention. As shown in Figure 7, the second transistor 30 includes a third gate 35, and the third gate 35 is located on the side of the second insulating layer 41 facing the base substrate 10, wherein the concentration of hydrogen elements in the third insulating layer 42 is less than or equal to the concentration of hydrogen elements in the second insulating layer 41.

[0080] Specifically, the second transistor 30 includes not only the second gate 32 but also the third gate 35, that is, the second transistor 30 is a dual-gate transistor, so that the mobility of the carriers in the second transistor 30 can be enhanced, and the response capability of the second transistor 30 can be enhanced; based on this, the size of the second transistor 30 can be appropriately reduced, and then the area of ​​the non-display area NAA where the driving circuit 50 is located can be reduced, so as to achieve a narrow frame of the display panel 100. In addition, when the second transistor 30 includes the third gate 35, some oxygen atoms in the second insulating layer 41 between the second active layer 31 and the third gate 32 are suspended, thereby forming defects, which may have an impact on the capture of carriers in the second transistor 30, and affect the stability of the second transistor 30. In this embodiment, the concentration of hydrogen elements in the second insulating layer 41 is set to be greater than the concentration of hydrogen elements in the third insulating layer 42. On the one hand, this prevents the hydrogen elements in the second insulating layer 41 from affecting the second active layer 31. On the other hand, defects inside the second insulating layer 41 are repaired by appropriate hydrogen elements. At the same time, the third insulating layer 42 is used to protect the second transistor 30, thereby further improving the stability of the second transistor 30.

[0081] Based on the above technical solution, continue to refer to Figure 7 Optionally, the thickness H1 of the first insulating layer 40 is less than the thickness H2 of the second insulating layer 41. When the second transistor 30 is a dual-gate transistor, the second gate 32 is the main gate of the second transistor 30, and the third gate 35 is the auxiliary gate of the second transistor 30. By setting the thickness of the first insulating layer 40 corresponding to the main gate to be less than the thickness of the second insulating layer 41 corresponding to the auxiliary gate, the control capability of the main gate over the second transistor 30 is ensured.

[0082] When the second transistor 30 is a dual-gate transistor, optionally, the first insulating layer 40 includes silicon oxide SiO X The second insulating layer 41 includes silicon oxide SiOy , where x is the ratio of the number of oxygen atoms to the number of silicon atoms in the first insulating layer 40, y is the ratio of the number of oxygen atoms to the number of silicon atoms in the second insulating layer 41, and x <y. That is, since the first insulating layer 40 is an insulating layer of the main gate (the second gate 32), the concentration of hydrogen in the first insulating layer 40 is appropriately increased to repair the internal structure, and the second insulating layer 41 is an insulating layer of the auxiliary gate (the third gate 35), and the concentration of oxygen is appropriately increased to provide sufficient oxygen to the second active layer 32, so as to ensure the good performance of the second transistor 30.

[0083] It should be noted that Figure 7 Only when the second transistor 30 is a dual-gate transistor, the relationship between the thickness H1 of the first insulating layer 40 and the thickness H2 of the second insulating layer 41 is described, and when the materials of the first insulating layer 40 and the second insulating layer 41 are both silicon oxide, the ratio of the number of oxygen atoms in the first insulating layer 40 to the number of silicon atoms and the ratio of the number of oxygen atoms in the second insulating layer 41 to the number of silicon atoms are defined. It can be understood that when the third transistor 70 is a dual-gate transistor, the fourth insulating layer 43 and the fifth insulating layer 44 also satisfy the above relationship; when the fourth transistor 80 is a dual-gate transistor, the sixth insulating layer 45 and the seventh insulating layer 46 also satisfy the above relationship.

[0084] On the basis of the above schemes, optionally, the substrate substrate 10 in the embodiment of the present invention may be a flexible substrate substrate or a rigid substrate substrate, which is not limited in the embodiment of the present invention. When the substrate substrate 10 is a flexible substrate, the substrate substrate 10 may include a polyimide substrate to ensure that the flexible substrate has good high temperature resistance and good insulation performance; wherein the substrate substrate 10 may include a layer of polyimide substrate or two layers of polyimide substrate, which is also not limited in the embodiment of the present invention. When the substrate substrate 10 includes a layer of polyimide substrate, the film structure of the substrate substrate 10 is simple, the preparation process is simple, and it is conducive to achieving the requirements of the thin and light design of the substrate substrate 10 and the entire display panel. When the substrate substrate 10 includes at least two layers of polyimide substrate, a buffer layer is also provided between the polyimide substrates to enhance the adhesion between the polyimide substrates and to prevent some impurities in the substrate from affecting the first active layer 21. In addition, since the polyimide substrate is generally prepared on a rigid substrate, after the drive circuit 50, the pixel circuit, the light-emitting element, etc. are prepared on the base substrate 10, a laser stripping technique is generally used to strip off and remove the rigid substrate. The polyimide substrate may be damaged when the rigid substrate is removed by laser stripping. Therefore, when the base substrate 10 includes at least two polyimide substrates, for example, a first polyimide substrate and a second polyimide substrate, a first buffer layer is provided between the first polyimide substrate and the second polyimide substrate, and a second buffer layer is provided between the second polyimide substrate and the first active layer 21, the first polyimide substrate is prepared on a rigid substrate, and the drive circuit 50 and the pixel circuit are prepared on the second buffer layer. Even if the first polyimide substrate may be damaged when the rigid substrate is removed by laser stripping, the integrity of the second polyimide substrate and the integrity of the second buffer layer on the second polyimide substrate can still be guaranteed, thereby ensuring the integrity of the entire display panel. See, for example, Figure 8 , Figure 8 For example, the base substrate 10 is a flexible substrate, and the base substrate 10 includes a first flexible substrate 11 and a second flexible substrate 13 of polyimide, a first buffer layer 12 between the first flexible substrate 11 and the second flexible substrate 13, and a second buffer layer 14 between the second flexible substrate 13 and the first active layer 21.

[0085] Based on the same inventive concept, an embodiment of the present invention further provides a display panel. Fig. 9 is a schematic diagram of the structure of another display panel provided by an embodiment of the present invention, such as Fig. 9As shown, the display panel 100 provided by the embodiment of the present invention includes a substrate 10; a first transistor 20 and a second transistor 30, the first transistor 20 and the second transistor 30 are formed on the substrate 10, the first transistor 20 includes a first active layer 21, a first gate 22, a first source 23 and a first drain 24, the first active layer 21 includes silicon; the second transistor 30 includes a second active layer 31, a second gate 32, a third gate 35, a second source 33 and a second drain 34, the second active layer 31 includes an oxide semiconductor; the second active layer 3 1 is located on the side of the first active layer 21 away from the base substrate 10; the first insulating layer 40 and the second insulating layer 41, the first insulating layer 40 and the second insulating layer 41 are respectively located on both sides of the second active layer 31, the first insulating layer 40 is located between the second gate 32 and the second active layer 31, the second insulating layer 41 is located between the third gate 35 and the second active layer 31, and the thickness of the first insulating layer 40 is less than the thickness of the second insulating layer 41; wherein the concentration of hydrogen in the first insulating layer 40 is greater than the concentration of hydrogen in the second insulating layer 41; the display panel 100 includes a pixel circuit ( Fig. 9 ) and a driving circuit 50 for providing a driving signal to the pixel circuit, wherein the driving circuit 50 includes a second transistor 20, and the pixel circuit includes a first transistor 20 or the driving circuit 50 includes a first transistor 20. Fig. 9 The driving circuit including the first transistor 20 is taken as an example for description.

[0086] For example, see Fig. 9 When the second gate 32 is the main gate of the second transistor 30 and the top gate of the second transistor 30, the thickness H1 of the first insulating layer 40 corresponding to the main gate is set to be smaller than the thickness H2 of the second insulating layer 41 corresponding to the auxiliary gate to ensure the control ability of the main gate over the second transistor 30.

[0087] For example, Fig.10 is a schematic diagram of the structure of another display panel provided by an embodiment of the present invention, such as Fig.10 As shown, when the second gate 32 is the main gate of the second transistor 30 and the bottom gate of the second transistor 30, the thickness of the first insulating layer 40 corresponding to the main gate is set to be smaller than the thickness of the second insulating layer 41 corresponding to the auxiliary gate to ensure the control ability of the main gate over the second transistor 30.

[0088] The display panel provided by the embodiment of the present invention sets the concentration of hydrogen elements in the first insulating layer (i.e., the insulating layer of the main gate) to be greater than the concentration of hydrogen elements in the second insulating layer (the insulating layer of the auxiliary gate), that is, the concentration of hydrogen elements in the first insulating layer is appropriately increased, which is beneficial to repairing defects in the first insulating layer; the concentration of hydrogen elements in the second insulating layer is appropriately reduced to prevent hydrogen elements from diffusing into the second active layer and affecting the second transistor, thereby improving the stability of the second transistor and ensuring good performance of the driving circuit; at the same time, by setting the thickness of the first insulating layer (i.e., the insulating layer of the main gate) to be smaller than the thickness of the second insulating layer (the insulating layer of the auxiliary gate), the control ability of the main gate over the second transistor is guaranteed.

[0089] Based on the same inventive concept, an embodiment of the present invention further provides a display panel. Fig.11 is a schematic diagram of the structure of another display panel provided by an embodiment of the present invention, such as Fig.11 As shown, the display panel 100 provided by the embodiment of the present invention includes a substrate 10, the substrate 10 includes a first region CC and a second region DD; a first transistor 20 and a second transistor 30, the first transistor 20 and the second transistor 30 are formed on the substrate 10, the first transistor 20 is located in the first region CC, and the second transistor 30 is located in the second region DD; the first transistor 20 includes a first active layer 21, a first gate 22, a first source 23 and a first drain 24, the first active layer includes silicon, which can be polysilicon, that is, the first active layer 21 is a polysilicon active layer, for example, an LTPS active layer. The second transistor 30 includes a second active layer 31, a second gate 32, a second source 33 and a second drain 34, the second active layer 31 includes an oxide semiconductor, that is, the second active layer 31 is an oxide semiconductor active layer, for example, an IGZO active layer. The second active layer 31 is located on the side of the first active layer 21 away from the base substrate 10; the first insulating layer 40 and the second insulating layer 41, the first insulating layer 40 is located on the side of the second active layer 31 away from the base substrate 10, and is located between the second gate 32 and the second active layer 31, and the second insulating layer 41 is located on the side of the second active layer 31 facing the base substrate 10, wherein the concentration of hydrogen in the first insulating layer 40 is greater than the concentration of hydrogen in the second insulating layer 41; the display panel 100 includes a pixel circuit ( Fig.11 ) and a driving circuit 50 for providing a driving signal to the pixel circuit, wherein the driving circuit 50 includes at least one second transistor 30, Fig.11 The driving circuit 50 includes both the first transistor 20 and the second transistor 30. The concentration of hydrogen in the first region CC is greater than that in the second region DD; the concentration of oxygen in the second region DD is greater than that in the first region CC.

[0090] In this embodiment, by setting the concentration of hydrogen elements in the first insulating layer 40 to be greater than the concentration of hydrogen elements in the second insulating layer 41, that is, by appropriately increasing the concentration of hydrogen elements in the first insulating layer 40, it is beneficial to repair defects in the first insulating layer 40; by appropriately reducing the concentration of hydrogen elements in the second insulating layer 41, it is prevented that hydrogen elements diffuse into the second active layer 31 and affect the second transistor 30, thereby improving the stability of the second transistor 30 and ensuring good performance of the driving circuit 50. In addition, by setting the concentration of hydrogen elements in the first region CC including the first transistor 20 to be appropriately increased, so that hydrogen elements repair defects in the first active layer 21, the performance of the first transistor 20 is good, and at the same time, the concentration of hydrogen elements in the second region DD is reduced, so that excessive hydrogen elements are prevented from affecting the second active layer 31, thereby affecting the performance of the second transistor 30; in addition, by setting the concentration of oxygen elements in the second region DD including the second transistor 30 to be appropriately increased, sufficient oxygen elements are provided to the second active layer 32, thereby ensuring good performance of the second transistor 30.

[0091] It should be noted that Fig.11 It is taken as an example that the concentration of oxygen element in all film layers in the second region DD is appropriately increased to provide sufficient oxygen element for the second active layer 32. In other optional embodiments, only part of the film layers may be provided, and the concentration of oxygen element is appropriately increased to provide sufficient oxygen element for the second active layer 32. For example, see Fig.12 , only the concentration of oxygen in the first insulating layer 40 and the second insulating layer 41 is appropriately increased to provide sufficient oxygen to the second active layer 32. That is to say, by setting the concentration of hydrogen in the first insulating layer 40 to be greater than that in the second insulating layer 41, that is, by appropriately increasing the concentration of hydrogen in the first insulating layer 40, it is beneficial to repair the defects in the first insulating layer 40; by appropriately reducing the concentration of hydrogen in the second insulating layer 41, it is prevented that hydrogen diffuses into the second active layer 31 and affects the second transistor 30, thereby improving the stability of the second transistor 30 and ensuring the good performance of the driving circuit 50; at the same time, the concentration of oxygen in the first insulating layer 40 and the second insulating layer 41 is appropriately increased to provide sufficient oxygen to the second active layer 32, further ensuring the good performance of the driving circuit 50.

[0092] It should be noted that, for example, an ion implantation process may be used to make the hydrogen element concentration and the oxygen element concentration in different regions different.

[0093] Since the regional setting can be performed, that is, the second region DD including the second transistor 30 is an oxygen-rich region, the hydrogen element will not affect the second active layer 31 due to the increase in the concentration of the hydrogen element in the first region CC. Fig.13Therefore, the second active layer 31 and the first active layer 21 can be set to the same film layer, and the first gate 22 and the second gate 32 are located in the same film layer; in this way, the thickness of the insulating layer can be reduced, thereby reducing the thickness of the display panel 100.

[0094] In addition, see Fig.13 , the first source 23, the first drain 24, the second source 33 and the second drain 34 are located in the same film layer, and the first source 23 is electrically connected to the first active layer 21 through the first via K1, and the first drain 24 is electrically connected to the first active layer 21 through the second via K2; the second source 33 is electrically connected to the second active layer 31 through the third via K3, and the second drain 34 is electrically connected to the second active layer 31 through the fourth via K4. When the thickness of the insulating layer is reduced, the depths of the first via K1, the second via K2, the third via K3 and the fourth via K4 are reduced, so that deep drilling is avoided and the difficulty of drilling is reduced.

[0095] Based on this solution, optional, continue to see Fig.13 The second region DD further includes a third insulating layer 42, and the third insulating layer 42 is located on the side of the second gate 32 away from the substrate 10. It should be noted that, on the basis that the second region DD is an oxygen-rich region, the relationship between the hydrogen concentrations and the oxygen concentrations in the first insulating layer 40, the second insulating layer 41 and the third insulating layer 42 in the foregoing content are all applicable to this solution, and will not be repeated here.

[0096] Based on the same inventive concept, an embodiment of the present invention further provides a display device, which includes any one of the display panels provided in the above embodiments. Fig.14 The display device 1000 includes a display panel 100. Therefore, the display device also has the beneficial effects of the display panel in the above embodiment. The similarities can be understood by referring to the above explanation of the display panel, which will not be repeated below.

[0097] The display device 1000 provided in the embodiment of the present invention can be Fig.14 The mobile phone shown can also be any electronic product with a display function, including but not limited to the following categories: televisions, laptops, desktop displays, tablet computers, digital cameras, smart bracelets, smart glasses, car displays, industrial control equipment, medical display screens, touch interactive terminals, etc. The embodiments of the present invention do not specifically limit this.

[0098] Note that the above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A display panel, characterized in that: include substrate substrate; a first transistor and a second transistor, wherein the first transistor and the second transistor are formed on the substrate, the first transistor comprises a first active layer, a first gate, a first source and a first drain, the first active layer comprises silicon; the second transistor comprises a second active layer, a second gate, a second source and a second drain, the second active layer comprises an oxide semiconductor; the second active layer is located on a side of the first active layer away from the substrate; a first insulating layer and a second insulating layer, wherein the first insulating layer is located on a side of the second active layer away from the substrate and between the second gate and the second active layer, and the second insulating layer is located on a side of the second active layer facing the substrate, wherein: The concentration of hydrogen in the first insulating layer is greater than the concentration of hydrogen in the second insulating layer; The display panel includes a pixel circuit and a driving circuit providing a driving signal to the pixel circuit, wherein the driving circuit includes the second transistor and the pixel circuit includes the first transistor or the driving circuit includes the first transistor.

2. The display panel according to claim 1, characterized in that: The display panel further includes a third insulating layer, and the third insulating layer is located on a side of the second gate away from the base substrate; wherein, The concentration of hydrogen elements in the third insulating layer is lower than the concentration of hydrogen elements in the first insulating layer.

3. The display panel according to claim 2, characterized in that: The second transistor includes a third gate, and the third gate is located on a side of the second insulating layer facing the substrate, wherein: The concentration of hydrogen elements in the third insulating layer is less than or equal to the concentration of hydrogen elements in the second insulating layer.

4. The display panel according to claim 3, characterized in that: The thickness of the first insulating layer is smaller than the thickness of the second insulating layer.

5. The display panel according to claim 2, characterized in that: The concentration of hydrogen in the first insulating layer is C1, the concentration of hydrogen in the second insulating layer is C2, and the concentration of hydrogen in the third insulating layer is C3, wherein: C1≤2C2-C3.

6. The display panel according to claim 2, characterized in that: In the third insulating layer, a concentration of hydrogen elements on a side close to the second gate is lower than a concentration of hydrogen elements on a side away from the second gate.

7. The display panel according to claim 1, characterized in that: The first insulating layer includes silicon oxide SiO X The second insulating layer includes silicon oxide SiO y , wherein x is the ratio of the number of oxygen atoms to the number of silicon atoms in the first insulating layer, y is the ratio of the number of oxygen atoms to the number of silicon atoms in the second insulating layer, and x<y.

8. The display panel according to claim 1, characterized in that: The concentration of hydrogen in the first insulating layer is C1, and the concentration of hydrogen in the second insulating layer is C2, wherein: C1=n×c2, 1<n<5.

9. The display panel according to claim 1, characterized in that: The concentration of hydrogen in the first insulating layer is C1, then 2×10 21 (atom / cm 3 )≤C1≤1×10 22 (atom / cm 3 ).

10. The display panel according to claim 1, characterized in that: In the first insulating layer, a concentration of hydrogen elements on a side close to the second active layer is lower than a concentration of hydrogen elements on a side away from the second active layer; In the second insulating layer, a concentration of hydrogen elements on a side close to the second active layer is lower than a concentration of hydrogen elements on a side away from the second active layer.

11. The display panel according to claim 1, characterized in that: The pixel circuit includes a third transistor, the third transistor includes a third active layer, a third source electrode, a third drain electrode and a fourth gate electrode, and the third active layer includes an oxide semiconductor; The display panel further includes a fourth insulating layer and a fifth insulating layer, wherein the fourth insulating layer is located on a side of the third active layer away from the base substrate and between the third active layer and the fourth gate, and the fifth insulating layer is located on a side of the third active layer facing the base substrate; wherein, The concentration of hydrogen elements in the fourth insulating layer is greater than the concentration of hydrogen elements in the fifth insulating layer.

12. The display panel according to claim 11, characterized in that: The third transistor is a switch transistor of the pixel circuit, and the concentration of hydrogen elements in the first insulating layer is greater than the concentration of hydrogen elements in the fourth insulating layer.

13. The display panel according to claim 11, characterized in that: The third transistor is a driving transistor of the pixel circuit, and a concentration of hydrogen elements in the first insulating layer is lower than a concentration of hydrogen elements in the fourth insulating layer.

14. The display panel according to claim 11, characterized in that: The pixel circuit includes a fourth transistor, the fourth transistor includes a fourth active layer, a fourth source electrode, a fourth drain electrode and a fifth gate electrode, and the fourth active layer includes an oxide semiconductor; The display panel further includes a sixth insulating layer and a seventh insulating layer, wherein the sixth insulating layer is located on a side of the fourth active layer away from the base substrate and between the fourth active layer and the fifth gate, and the seventh insulating layer is located on a side of the fourth active layer toward the base substrate; wherein, The concentration of hydrogen elements in the sixth insulating layer is greater than the concentration of hydrogen elements in the seventh insulating layer.

15. The display panel according to claim 14, characterized in that: The third transistor is a driving transistor of the pixel circuit, and the fourth transistor is a switching transistor of the pixel circuit, wherein: The concentration of hydrogen elements in the fourth insulating layer is greater than the concentration of hydrogen elements in the sixth insulating layer.

16. The display panel according to claim 2, characterized in that: A concentration of oxygen element in the first insulating layer is lower than a concentration of oxygen element in the second insulating layer.

17. The display panel according to claim 16, characterized in that: The ratio of the concentration of oxygen element to the concentration of silicon element in the first insulating layer is A, and the ratio of the concentration of oxygen element to the concentration of silicon element in the second insulating layer is B, wherein: A<B.

18. The display panel according to claim 16, characterized in that: The ratio of the concentration of oxygen element to the concentration of silicon element in the first insulating layer is A, and the ratio of the concentration of oxygen element to the concentration of silicon element in the second insulating layer is B; The concentration of hydrogen in the first insulating layer is C1, and the concentration of hydrogen in the second insulating layer is C2, wherein: C1×(A-1)≤C2×(B-1).

19. The display panel according to claim 18, characterized in that: The concentration ratio of oxygen element to silicon element in the third insulating layer is C, wherein, A<C<B.

20. The display panel according to claim 19, characterized in that: The concentration of hydrogen in the third insulating layer is C3, where C2×(C-1)≥C3×(B-1).

21. A display panel, characterized in that: include substrate substrate; a first transistor and a second transistor, wherein the first transistor and the second transistor are formed on the substrate, the first transistor comprises a first active layer, a first gate, a first source and a first drain, the first active layer comprises silicon; the second transistor comprises a second active layer, a second gate, a third gate, a second source and a second drain, the second active layer comprises an oxide semiconductor; the second active layer is located on a side of the first active layer away from the substrate; a first insulating layer and a second insulating layer, wherein the first insulating layer and the second insulating layer are respectively located on both sides of the second active layer, the first insulating layer is located between the second gate and the second active layer, the second insulating layer is located between the third gate and the second active layer, and the thickness of the first insulating layer is less than the thickness of the second insulating layer; wherein, The concentration of hydrogen in the first insulating layer is greater than the concentration of hydrogen in the second insulating layer; The display panel includes a pixel circuit and a driving circuit providing a driving signal to the pixel circuit, wherein the driving circuit includes the second transistor and the pixel circuit includes the first transistor or the driving circuit includes the first transistor.

22. A display device, characterized in that: A display panel comprising any one of claims 1-21.

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