LED light emitting structure and preparation method thereof

By adopting the design of double-sided wiring in the LED light emitting structure, the problems of optical scattering and crosstalk in the traditional LED flip structure are solved, and better display effect and conductivity are achieved.

CN112768581BActive Publication Date: 2025-04-29SHENZHEN AOSHI MICRO TECH CO LTD
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Patent Information

Application Number
CN202110162105.7
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2021-02-05
Publication Date
2025-04-29
Estimated Expiration
2041-02-05

AI Technical Summary

Technical Problem

The traditional LED flip structure causes optical scattering and crosstalk due to the metal wiring of the anode and cathode, which affects the display effect.

Method used

By providing double-sided wiring in the LED light emitting structure, the first electrode, the transparent conductive layer and the second electrode are respectively located on both sides of the light emitting unit, avoiding total reflection of internal light, thereby reducing optical scattering and crosstalk.

Benefits of technology

It is achieved to reduce optical scattering and crosstalk, improve the display effect, and enhance the conductivity of the transparent conductive layer through the second electrode.

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Abstract

The present invention relates to an LED light-emitting structure and a preparation method thereof, comprising: providing a supporting substrate, forming a light-emitting unit on the surface of the supporting substrate; forming a first electrode on the surface of the light-emitting unit away from the supporting substrate; providing a bonding substrate, bonding the obtained structure to the surface of the bonding substrate via a bonding layer; wherein the first electrode is in contact with the bonding layer; removing the supporting substrate, and forming a transparent conductive layer on the surface of the light-emitting unit away from the first electrode; and forming a second electrode on the surface of the transparent conductive layer away from the light-emitting unit. The preparation method of the above-mentioned LED light-emitting structure realizes double-sided wiring, avoids total reflection of internal light, thereby reducing optical scattering and crosstalk, and improving display effects. By setting the second electrode, the conductivity of the transparent conductive layer is enhanced.
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Description

Technical Field

[0001] The present application relates to the technical field of semiconductor component manufacturing, and in particular to an LED light-emitting structure and a preparation method thereof. Background Art

[0002] With the development of electronic technology, the performance requirements of electronic products are getting higher and higher, which makes the electronic components and circuit board substrate circuits more and more complex; at the same time, the size requirements of electronic products are getting smaller and thinner. Therefore, it is an inevitable trend for electronic components and circuit board substrate circuits to be integrated, miniaturized, and multifunctional. The more effective packaging of integrated circuits and ICs has played a key role in enhancing the functions of these products and further miniaturizing them. Therefore, it has become a trend to embed components such as chips into substrates to form embedded packaging substrates. Among them, flip-chip bonding is a widely implemented bonding method for packaging in the prior art.

[0003] However, the traditional flip-chip LED structure generally has the metal wiring of the anode and cathode on the same side of a light-emitting unit. This arrangement will form strong optical scattering and crosstalk, resulting in a non-center-symmetrical pixel emission, which affects the display effect. Summary of the invention

[0004] Based on this, it is necessary to provide an LED light-emitting structure and a preparation method thereof that can reduce the optical crosstalk caused by the pixel structure in order to solve the above technical problems.

[0005] In order to achieve the above object, on the one hand, the present invention provides a method for preparing an LED light-emitting structure, comprising the following steps:

[0006] Providing a supporting substrate, and forming a light-emitting unit on a surface of the supporting substrate;

[0007] forming a first electrode on a surface of the light emitting unit away from the supporting substrate;

[0008] Providing a bonding substrate, and bonding the obtained structure to the surface of the bonding substrate via a bonding layer; wherein the first electrode is in contact with the bonding layer;

[0009] removing the supporting substrate and forming a transparent conductive layer on the surface of the light-emitting unit away from the first electrode;

[0010] A second electrode is formed on a surface of the transparent conductive layer away from the light emitting unit.

[0011] By adopting the above-mentioned method for preparing the LED light-emitting structure, the first electrode of the LED light-emitting structure, the transparent conductive layer and the second electrode are respectively located on both sides of the light-emitting unit, realizing double-sided wiring, avoiding total reflection of internal light, thereby reducing optical scattering and crosstalk, and improving display effects. By setting the second electrode, the conductivity of the transparent conductive layer is enhanced.

[0012] In one embodiment, providing a supporting substrate and forming a light-emitting unit on a surface of the supporting substrate comprises the following steps:

[0013] Providing a supporting substrate, and forming an epitaxial layer on a surface of the supporting substrate;

[0014] The epitaxial layer is patterned to form a plurality of light-emitting units arranged at intervals, wherein the plurality of light-emitting units are arranged in a multi-row and multi-column array structure.

[0015] By adopting the above-mentioned method for preparing the LED light-emitting structure, the epitaxial layer is completely divided into a plurality of independent islands to form a plurality of light-emitting units arranged at intervals. This arrangement avoids the appearance of steps.

[0016] In one embodiment, before forming the first electrode on the surface of the light emitting unit away from the supporting substrate, the method further includes the following steps:

[0017] forming an insulating layer on the surface of the supporting substrate and the surface of the light emitting unit away from the supporting substrate, wherein the insulating layer fills the gaps between adjacent light emitting units and covers the surface of the light emitting unit away from the supporting substrate;

[0018] A plurality of through holes are formed in the insulating layer, the through holes correspond to the light emitting units one by one and expose the light emitting units.

[0019] In one embodiment, forming a first electrode on a surface of the light emitting unit away from the supporting substrate comprises the following steps:

[0020] forming an electrode layer in the through hole and on a surface of the insulating layer away from the supporting substrate;

[0021] The electrode layer is patterned to form a plurality of first electrodes arranged at intervals, each of the first electrodes extending along a row direction of the array structure to sequentially connect the light-emitting units located in different rows in parallel.

[0022] In one embodiment, forming a transparent conductive layer on a surface of the light emitting unit away from the first electrode comprises the following steps:

[0023] forming a transparent conductive material layer on a surface of the light-emitting unit away from the first electrode and a surface of the insulating layer away from the supporting substrate;

[0024] The transparent conductive material layer is patterned to form a plurality of transparent conductive layers arranged at intervals, each of the transparent conductive layers extending along the column direction of the array structure to sequentially connect the light emitting units located in different columns in parallel.

[0025] In one embodiment, the second electrode covers the transparent conductive layer.

[0026] The present invention also provides an LED light emitting structure, characterized in that it comprises:

[0027] Bonding substrates;

[0028] a first electrode, the first electrode being bonded to the surface of the bonding substrate via a bonding layer;

[0029] A light emitting unit, wherein the light emitting unit is disposed on a surface of the first electrode away from the bonding layer;

[0030] a transparent conductive layer, wherein the transparent conductive layer covers a surface of the light-emitting unit away from the first electrode;

[0031] The second electrode is located on a surface of the transparent conductive layer away from the light emitting unit.

[0032] The first electrode, transparent conductive layer and second electrode of the above LED light-emitting structure are respectively located on both sides of the light-emitting unit, realizing double-sided wiring, avoiding total reflection of internal light, thereby reducing optical scattering and crosstalk, and improving display effects. Among them, the second electrode can also enhance the conductivity of the transparent conductive layer.

[0033] In one embodiment, the second electrode covers a surface of the transparent conductive layer away from the light-emitting unit.

[0034] In one embodiment, the plurality of light-emitting units are arranged into a multi-row and multi-column array structure, the number of the first electrodes is multiple, the plurality of the first electrodes are arranged at intervals, and each of the first electrodes extends along the row direction of the array structure, so as to respectively connect the light-emitting units located in different rows in parallel in sequence; the number of the transparent conductive layers is multiple, the plurality of the transparent conductive layers are arranged at intervals, and each of the transparent conductive layers extends along the column direction of the array structure, so as to respectively connect the light-emitting units located in different columns in parallel in sequence; the number of the second electrodes is the same as the number of the transparent conductive layers, and are arranged in a one-to-one correspondence with the transparent conductive layers.

[0035] In one of the embodiments, the LED light-emitting structure also includes an insulating layer, which fills the gap between adjacent light-emitting units and is located between the light-emitting units and the bonding layer. A plurality of through holes are provided in the insulating layer, and the through holes correspond one-to-one to the light-emitting units; the first electrode is connected to the light-emitting unit via the through holes.

[0036] In one embodiment, a plurality of light-emitting windows are disposed on the second electrode, wherein the light-emitting windows expose the transparent conductive layer and are disposed one-to-one corresponding to the light-emitting units.

[0037] In one embodiment, the first electrode is the anode of the light-emitting unit, and the transparent conductive layer is the cathode of the light-emitting unit; or the first electrode is the cathode of the light-emitting unit, and the transparent conductive layer is the anode of the light-emitting unit. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the conventional technology, the drawings required for use in the embodiments or the conventional technology descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0039] Figure 1 It is a structural schematic diagram of an LED light-emitting structure;

[0040] Figure 2 A flow chart of a method for preparing an LED light-emitting structure provided in some embodiments of the present application;

[0041] Figure 3 This is a flow chart of step S1 in the method for preparing an LED light-emitting structure provided in one embodiment of the present application;

[0042] Figure 4 A schematic cross-sectional view of a structure obtained in step S11 of a method for preparing an LED light-emitting structure provided in one embodiment of the present application;

[0043] Figure 5 A schematic cross-sectional view of a structure obtained in step S12 of a method for preparing an LED light-emitting structure provided in one embodiment of the present application;

[0044] Figure 6 A schematic cross-sectional view of a structure obtained in step S3 of a method for preparing an LED light-emitting structure provided in one embodiment of the present application;

[0045] Figure 7 This is a flow chart of step S4 in the method for preparing an LED light-emitting structure provided in one embodiment of the present application;

[0046] Figure 8 A schematic cross-sectional view of a structure obtained in step S4 of a method for preparing an LED light-emitting structure provided in one embodiment of the present application;

[0047] Fig. 9 A top view of a structure obtained in step S4 of a method for preparing an LED light-emitting structure provided in one embodiment of the present application;

[0048] Fig.10 A schematic cross-sectional view of a structure obtained in step S5 of a method for preparing an LED light-emitting structure provided in one embodiment of the present application;

[0049] Fig.11 This is a flow chart of step S6 in the method for preparing an LED light-emitting structure provided in one embodiment of the present application;

[0050] Fig.12 This is a flow chart of step S6 in the method for preparing an LED light-emitting structure provided in one embodiment of the present application;

[0051] Fig.13 This is a schematic cross-sectional view of the structure obtained in step S7 of the method for preparing an LED light-emitting structure provided in one embodiment of the present application; wherein: Fig.13 It is also a schematic cross-sectional structure diagram of an LED light emitting structure provided in another embodiment;

[0052] Fig.14 A bottom view of an LED light emitting structure provided in one embodiment of the present application;

[0053] Fig.15 A schematic diagram of the shape of the second electrode in the LED light-emitting structure provided in one embodiment of the present application.

[0054] Description of reference numerals:

[0055] 1'-light-emitting unit, 2'-anode, 3'-cathode, 1-support substrate, 2-light-emitting unit, 21-epitaxial layer, 3-insulating layer, 4-first electrode, 5-bonding substrate, 6-bonding layer, 7-transparent conductive layer, 8-second electrode. DETAILED DESCRIPTION

[0056] In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Embodiments of the present application are provided in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0057] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0058] It should be understood that when an element or layer is referred to as being "on, adjacent to, connected to or coupled to other elements or layers, it may be directly on, adjacent to, connected to or coupled to other elements or layers, or there may be intervening elements or layers. On the contrary, when an element is referred to as being "directly on, directly adjacent to, directly connected to or directly coupled to other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, doping types and / or parts, these elements, components, regions, layers, doping types and / or parts should not be limited by these terms. These terms are merely used to distinguish one element, component, region, layer, doping type or part from another element, component, region, layer, doping type or part. Therefore, without departing from the teachings of the present invention, the first element, component, region, layer, doping type or portion discussed below may be represented as a second element, component, region, layer or portion; for example, a first electrode may be referred to as a second electrode, and similarly, a second electrode may be referred to as a first electrode; the first electrode and the second electrode are different electrodes.

[0059] Spatially relative terms such as "under," "beneath," "below," "under," "above," "above," and the like may be used herein to describe the relationship of an element or feature shown in the figures to other elements or features. It should be understood that, in addition to the orientations shown in the figures, spatially relative terms also include different orientations of the device in use and operation. For example, if the device in the accompanying drawings is flipped, an element or feature described as "under other elements" or "under it" or "under it" will be oriented as being "above" the other elements or features. Thus, the exemplary terms "under" and "under" may include both upper and lower orientations. In addition, the device may also include additional orientations (e.g., rotated 90 degrees or other orientations), and the spatial descriptors used herein are interpreted accordingly.

[0060] When used herein, the singular forms "a", "an", and "said / the" may also include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "include / comprise" or "have" and the like specify the presence of stated features, wholes, steps, operations, components, parts, or combinations thereof, but do not exclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts, or combinations thereof. At the same time, in this specification, the term "and / or" includes any and all combinations of the relevant listed items.

[0061] Embodiments of the invention are described herein with reference to cross-sectional views which are schematic diagrams of ideal embodiments (and intermediate structures) of the invention, such that variations in the shapes shown due to, for example, manufacturing techniques and / or tolerances are anticipated. Thus, embodiments of the invention should not be limited to the specific shapes of the regions shown herein, but rather include deviations in shapes due to, for example, manufacturing techniques. For example, an implanted region shown as a rectangle typically has rounded or curved features and / or an implant concentration gradient at its edges rather than a binary change from an implanted region to a non-implanted region. Similarly, a buried region formed by implantation may result in some implantation in the region between the buried region and the surface through which the implantation is performed. Thus, the regions shown in the figures are schematic in nature, their shapes do not represent the actual shape of the region of the device, and do not limit the scope of the invention.

[0062] like Figure 1 As shown, in the conventional flip-chip structure of LED, the metal wiring of the anode 2' and the cathode 3' is generally performed on the same side of a light-emitting unit 1', and this arrangement is bound to cause a step. Due to the total reflection of the internal light, when observing the pixel from the front, Figure 1 Strong light is emitted from the ABC positions, forming strong optical scattering and crosstalk, resulting in a non-centrally symmetrical pixel emission, which affects the display effect.

[0063] See also Figure 2 The present invention provides a method for preparing an LED light-emitting structure, comprising the following steps:

[0064] S1: providing a supporting substrate 1, and forming a light-emitting unit 2 on a surface of the supporting substrate 1;

[0065] S4: forming a first electrode 4 on a surface of the light emitting unit 2 away from the supporting substrate 1;

[0066] S5: providing a bonding substrate 5, and bonding the obtained structure to the surface of the bonding substrate 5 via a bonding layer 6; wherein the first electrode 4 is in contact with the bonding layer 6;

[0067] S6: removing the supporting substrate 1 and forming a transparent conductive layer 7 on the surface of the light emitting unit 2 away from the first electrode 4;

[0068] S7 : forming a second electrode 8 on a surface of the transparent conductive layer 7 away from the light emitting unit 2 .

[0069] By adopting the above-mentioned method for preparing the LED light-emitting structure, by providing the bonding substrate 5 and removing the supporting substrate 1, the first electrode 4, the transparent conductive layer 7 and the second electrode 8 of the LED light-emitting structure are respectively located on both sides of the light-emitting unit 2, thereby realizing double-sided wiring, avoiding total reflection of internal light, thereby reducing optical scattering and crosstalk, and improving the display effect. At the same time, by providing the second electrode 8, the conductivity of the transparent conductive layer 7 is enhanced.

[0070] See also Figure 2 and Figure 3 , step S1, in one embodiment, specifically includes the following steps:

[0071] S11: Figure 4 As shown, a supporting substrate 1 is provided, and an epitaxial layer 21 is formed on the surface of the supporting substrate 1;

[0072] S12: Figure 5 As shown, the epitaxial layer 21 is patterned to form a plurality of light-emitting units 2 arranged at intervals, and the plurality of light-emitting units 2 are arranged in a multi-row and multi-column array structure.

[0073] By adopting the above-mentioned method for preparing the LED light-emitting structure, the epitaxial layer 21 is completely divided into a plurality of independent islands to form a plurality of light-emitting units 2 arranged at intervals. This arrangement avoids the appearance of steps.

[0074] Specifically, in one embodiment, the supporting substrate 1 can use any one of an aluminum oxide substrate, a silicon substrate, a sapphire substrate, a glass substrate or a silicon carbide substrate, etc., and this embodiment does not limit the material of the supporting substrate 1; in one embodiment, the epitaxial layer 21 can be formed on the surface of the supporting substrate 1 by any one of the growth processes such as metal organic chemical vapor deposition (MOCVD) or plasma assisted chemical deposition, etc., and this embodiment does not limit the method of forming the epitaxial layer 21; in one embodiment, the epitaxial layer 21 can be patterned by conventional exposure process or dry etching, etc., and this embodiment does not limit the method of patterning the epitaxial layer 21.

[0075] Please continue reading Figure 2 and Figure 6 In one embodiment, the following steps may be included before step S4:

[0076] S2: forming an insulating layer 3 on the surface of the supporting substrate 1 and the surface of the light-emitting unit 2 away from the supporting substrate 1, wherein the insulating layer 3 fills the gaps between adjacent light-emitting units 2 and covers the surface of the light-emitting unit 2 away from the supporting substrate 1;

[0077] S3: forming a plurality of through holes in the insulating layer 3 , wherein the through holes correspond to the light emitting units 2 one by one and expose the light emitting units 2 .

[0078] Specifically, in one embodiment, the material of the insulating layer 3 can be silicon dioxide (SiO 2 ), silicon nitride (SiN x ) or aluminum oxide (Al 2 O 3 ) and the like, and the present embodiment does not limit the material of the insulating layer 3; in one embodiment, the insulating layer 3 can be formed by a deposition method such as plasma enhanced chemical vapor deposition (PECVD) or atomic layer deposition (ALD), and the present embodiment does not limit the method for forming the insulating layer 3; in one embodiment, a plurality of through holes can be formed in the insulating layer 3 by dry or wet etching, and the present embodiment does not limit the method for forming the through holes; in one embodiment, a photosensitive planarizing glue is used, which can be directly exposed without etching.

[0079] In one embodiment, the through hole is located directly above each light emitting unit 2 .

[0080] See also Figure 7 and Figure 8 , step S4, in one embodiment, specifically includes the following steps:

[0081] S41: forming an electrode layer (not shown in the figure) in the through hole and on the surface of the insulating layer 3 away from the supporting substrate 1;

[0082] S42: patterning the electrode layer to form a plurality of first electrodes 4 arranged at intervals, each of the first electrodes 4 extending along the row direction of the array structure to sequentially connect the light emitting units 2 located in different rows in parallel.

[0083] Specifically, in some embodiments, the top view of the structure obtained in step S4 is as follows: Fig. 9 As shown, if it is based on passive light-emitting array driving, the first electrode 4 is in a strip shape, so as to sequentially connect the light-emitting units 2 located in different rows in parallel.

[0084] See also Fig.10 For step S5, specifically, bonding glue can be applied on the surface of the obtained structure away from the supporting substrate to form a bonding layer 6; the bonding substrate 5 and the surface of the bonding glue away from the first electrode 4 are bonded; and heating and curing are performed to bond the obtained structure to the surface of the bonding substrate 5 via the bonding layer 6.

[0085] In one of the embodiments, the bonding adhesive can be benzocyclobutene (BCB) or other bonding materials, and this embodiment does not limit the material of the bonding layer; in one of the embodiments, the curing temperature of heating and curing can be 200-500°C, specifically 250°C, 300°C, 350°C, 400°C or 450°C, etc., and this embodiment does not limit the curing temperature of heating and curing.

[0086] See also Fig.11 and Fig.12 , step S6, in one embodiment, specifically includes the following steps:

[0087] S61: forming a transparent conductive material layer (not shown in the figure) on the surface of the light emitting unit 2 away from the first electrode 4 and on the surface of the insulating layer 3 away from the supporting substrate 1;

[0088] S62: patterning the transparent conductive material layer to form a plurality of transparent conductive layers 7 arranged at intervals, each transparent conductive layer 7 extending along the column direction of the array structure to sequentially connect the light emitting units 2 located in different columns in parallel.

[0089] Of course, in other examples, the transparent conductive material layer formed in step S61 may be directly used as the transparent conductive layer 7 without being patterned, that is, the transparent conductive layer 7 is a whole film layer, and the transparent conductive layer 7 completely covers the surface of the light-emitting unit 2 away from the first electrode 4 and the surface of the insulating layer 3 away from the supporting substrate 1. It should be noted that when the transparent conductive layer 7 is a front film layer, the second electrode 8 is also a whole film layer and completely covers the transparent conductive layer 7.

[0090] For step S6, in one embodiment, any one or more of the processes such as laser stripping, chemical etching or physical grinding can be used to remove the support substrate 1. This embodiment does not limit the method of removing the support substrate 1; specifically, in one of the embodiments using the laser stripping process to remove the support substrate 1, a short-wavelength laser can be focused on the interface between the support substrate 1 and the light-emitting unit 2. The wavelength of the laser can be 300nm-900nm, specifically 380nm, 400nm, 500nm or 800nm, etc. This embodiment does not limit the wavelength of the laser; the laser can be a pulsed laser or other laser, and the energy density of the laser can be 150-300mJ / cm 2 , specifically 200mJ / cm 2 .

[0091] After the above steps, there may be residues on the surface of the obtained structure that cannot be completely removed. In one embodiment, after step S6, the residues on the surface of the obtained structure can be removed by cleaning, dry etching or wet etching.

[0092] In one embodiment, the material of the transparent conductive layer may be any one of indium tin oxide (ITO), indium zinc oxide (IZO) or indium gallium zinc oxide (IGZO) and the like. This embodiment does not limit the material of the transparent conductive layer.

[0093] Since the material of the transparent conductive layer generally has a low conductivity, when the current is too large, the in-plane voltage drop will have a certain in-plane distribution, resulting in uneven luminous brightness. Therefore, a second electrode 8 needs to be provided. Fig.13 As shown, the conductivity of the transparent conductive layer 7 is enhanced.

[0094] See also Fig.14 In one embodiment, the second electrode 8 covers the transparent conductive layer 7 .

[0095] See also Fig.15 In one embodiment, the second electrode 8 is provided with a plurality of light emitting windows, which expose the transparent conductive layer 7 and are arranged one by one corresponding to the light emitting units 2 .

[0096] By adopting the above-mentioned method for preparing the LED light-emitting structure, the light-emitting window on the second electrode 8 can be used to modify the pixel shape, thereby further reducing the emission of stray light and reducing optical crosstalk.

[0097] It should be understood that although Figure 2 , 3 The steps in the flowcharts of , 8 and 12 are shown in sequence as indicated by the arrows, but these steps are not necessarily executed in the order indicated by the arrows. Unless otherwise specified in this document, there is no strict order restriction for the execution of these steps, and these steps can be executed in other orders. Moreover, Figure 1 At least part of the steps may include multiple steps or multiple stages. These steps or stages are not necessarily performed at the same time, but can be performed at different times. The execution order of these steps or stages is not necessarily sequential, but can be performed in turn or alternately with other steps or at least part of the steps or stages in other steps.

[0098] Please continue reading Fig.13 The present invention also provides an LED light emitting structure, comprising:

[0099] Bonding substrate 5;

[0100] A first electrode 4, the first electrode 4 is bonded to the surface of a bonding substrate 5 via a bonding layer 6;

[0101] A light emitting unit 2, wherein the light emitting unit 2 is disposed on a surface of the first electrode 4 away from the bonding layer 6;

[0102] A transparent conductive layer 7, the transparent conductive layer 7 covers a surface of the light emitting unit 2 away from the first electrode 4;

[0103] The second electrode 8 is located on a surface of the transparent conductive layer 7 away from the light emitting unit 2 .

[0104] The first electrode 4, the transparent conductive layer 7 and the second electrode 8 of the above LED light-emitting structure are respectively located on both sides of the light-emitting unit 2, realizing double-sided wiring, avoiding total reflection of internal light, thereby reducing optical scattering and crosstalk, and improving display effects. Among them, the second electrode 8 can also enhance the conductivity of the transparent conductive layer.

[0105] For details, please continue to refer to Fig.12 In one embodiment, the bonding layer 6 has a plurality of grooves, and the first electrode 4 includes two parts, wherein the first part of the first electrode 4 is located in the groove of the bonding layer 6, and the thickness of the first part of the first electrode 4 is the same as the height of the groove of the bonding layer 6; the lower surface of the second part of the first electrode 4 is higher than the lower surface of the bonding layer 6.

[0106] Please continue reading Fig.13 In one embodiment, the second electrode 8 covers the surface of the transparent conductive layer 7 away from the light emitting unit 2 .

[0107] Please continue reading Fig.14 In one embodiment, the bottom view of the LED light emitting structure is as follows: Fig.14 As shown, a plurality of light-emitting units 2 are arranged into a multi-row and multi-column array structure, the number of first electrodes 4 is multiple, the plurality of first electrodes 4 are arranged at intervals, and each first electrode 4 extends along the row direction of the array structure, so as to respectively connect the light-emitting units 2 located in different rows in parallel in sequence; the number of transparent conductive layers 7 is multiple, the plurality of transparent conductive layers 7 are arranged at intervals, and each transparent conductive layer 7 extends along the column direction of the array structure, so as to respectively connect the light-emitting units 2 located in different columns in parallel in sequence; the number of second electrodes 8 is the same as the number of transparent conductive layers 7, and they are arranged in a one-to-one correspondence with the transparent conductive layers 7.

[0108] Specifically, in some embodiments, if driven based on a passive light-emitting array, it includes multiple transparent conductive layers 7, each transparent conductive layer 7 is strip-shaped, and adjacent transparent conductive layers 7 are arranged at intervals; in some other embodiments, the transparent conductive layer 7 can also be a whole film layer, in which case it fully covers the surface of the light-emitting unit 2 away from the first electrode 4 and the surface of the insulating layer 3 away from the supporting substrate 1. In this case, the second electrode 8 is also a whole film layer and completely covers the transparent conductive layer 7.

[0109] In one embodiment, the second electrode 8 is in a strip shape and completely covers the transparent conductive layer 7 .

[0110] In one embodiment, the extension direction of the second electrode 8 is orthogonal to the extension direction of the first electrode 4; wherein the first electrode 4 is used for row driving and the second electrode 8 is used for column driving; or the first electrode 4 is used for column driving and the second electrode 8 is used for row driving.

[0111] Please continue reading Fig.13 In one of the embodiments, the LED light-emitting structure also includes an insulating layer 3, which fills the gap between adjacent light-emitting units 2 and is located between the light-emitting unit 2 and the bonding layer 6. A plurality of through holes are provided in the insulating layer 3, and the through holes correspond to the light-emitting units 2 one by one; the first electrode 4 is connected to the light-emitting unit 2 via the through holes.

[0112] Please continue reading Fig.15 In one embodiment, a plurality of light-emitting windows are provided on the second electrode 8 , wherein the light-emitting windows expose the transparent conductive layer 7 and are arranged one by one corresponding to the light-emitting units 2 .

[0113] The second electrode 8 of the above-mentioned LED light-emitting structure has a light-emitting window, which can be used to modify the pixel shape, thereby further reducing the emission of stray light and reducing optical crosstalk.

[0114] In one embodiment, the first electrode 4 is the anode of the light emitting unit 2 , and the transparent conductive layer 7 is the cathode of the light emitting unit 2 ; or the first electrode 4 is the cathode of the light emitting unit 2 , and the transparent conductive layer 7 is the anode of the light emitting unit 2 .

[0115] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example.

[0116] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features of the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0117] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be construed as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.

Claims

1. A method for preparing an LED light-emitting structure, characterized in that: The steps include: Providing a supporting substrate, and forming a light-emitting unit on a surface of the supporting substrate; forming a first electrode on a surface of the light emitting unit away from the supporting substrate; Providing a bonding substrate, and bonding the obtained structure to the surface of the bonding substrate via a bonding layer; wherein the first electrode is in contact with the bonding layer; removing the supporting substrate and forming a transparent conductive layer on the surface of the light-emitting unit away from the first electrode; forming a second electrode on a surface of the transparent conductive layer away from the light emitting unit; The second electrode covers the transparent conductive layer; a plurality of light-emitting windows are provided on the second electrode, the light-emitting windows expose the transparent conductive layer and are arranged one by one corresponding to the light-emitting units; The first electrode is the anode of the light-emitting unit, and the transparent conductive layer is the cathode of the light-emitting unit; or the first electrode is the cathode of the light-emitting unit, and the transparent conductive layer is the anode of the light-emitting unit.

2. The method for preparing an LED light emitting structure according to claim 1, characterized in that: The step of providing a supporting substrate and forming a light-emitting unit on a surface of the supporting substrate comprises the following steps: Providing a supporting substrate, and forming an epitaxial layer on a surface of the supporting substrate; The epitaxial layer is patterned to form a plurality of light-emitting units arranged at intervals, wherein the plurality of light-emitting units are arranged in a multi-row and multi-column array structure.

3. The method for preparing an LED light emitting structure according to claim 2, characterized in that: Before forming the first electrode on the surface of the light emitting unit away from the supporting substrate, the method further includes the following steps: forming an insulating layer on the surface of the supporting substrate and the surface of the light emitting unit away from the supporting substrate, wherein the insulating layer fills the gaps between adjacent light emitting units and covers the surface of the light emitting unit away from the supporting substrate; A plurality of through holes are formed in the insulating layer, the through holes correspond to the light emitting units one by one and expose the light emitting units.

4. The method for preparing an LED light emitting structure according to claim 3, characterized in that: The step of forming a first electrode on a surface of the light emitting unit away from the supporting substrate comprises the following steps: forming an electrode layer in the through hole and on a surface of the insulating layer away from the supporting substrate; The electrode layer is patterned to form a plurality of first electrodes arranged at intervals, each of the first electrodes extending along a row direction of the array structure to sequentially connect the light-emitting units located in different rows in parallel.

5. The method for preparing an LED light emitting structure according to claim 4, characterized in that: The step of forming a transparent conductive layer on a surface of the light emitting unit away from the first electrode comprises the following steps: forming a transparent conductive material layer on a surface of the light-emitting unit away from the first electrode and a surface of the insulating layer away from the supporting substrate; The transparent conductive material layer is patterned to form a plurality of transparent conductive layers arranged at intervals, each of the transparent conductive layers extending along the column direction of the array structure to sequentially connect the light emitting units located in different columns in parallel.

6. An LED light emitting structure, characterized in that: include: Bonding substrates; a first electrode, the first electrode being bonded to the surface of the bonding substrate via a bonding layer; A light emitting unit, wherein the light emitting unit is disposed on a surface of the first electrode away from the bonding layer; an insulating layer, wherein the insulating layer is located between the light emitting unit and the bonding layer; a transparent conductive layer, wherein the transparent conductive layer covers a surface of the light-emitting unit away from the first electrode; a second electrode, the second electrode being located on a surface of the transparent conductive layer away from the light-emitting unit; the second electrode covering the transparent conductive layer; a plurality of light-emitting windows being provided on the second electrode, the light-emitting windows exposing the transparent conductive layer and being provided one-to-one with the light-emitting units; The first electrode is the anode of the light-emitting unit, and the transparent conductive layer is the cathode of the light-emitting unit; or the first electrode is the cathode of the light-emitting unit, and the transparent conductive layer is the anode of the light-emitting unit.

7. The LED light emitting structure according to claim 6, characterized in that: The extension direction of the second electrode is orthogonal to the extension direction of the first electrode; wherein the first electrode is used for row driving, and the second electrode is used for column driving; or, the first electrode is used for column driving, and the second electrode is used for row driving.

8. The LED light emitting structure according to claim 6, characterized in that: The plurality of light-emitting units are arranged in a multi-row and multi-column array structure, the number of the first electrodes is multiple, the plurality of the first electrodes are arranged at intervals, and each of the first electrodes extends along a row direction of the array structure, so as to sequentially connect the light-emitting units located in different rows in parallel; There are multiple transparent conductive layers, which are arranged at intervals, and each transparent conductive layer extends along the column direction of the array structure to connect the light-emitting units located in different columns in parallel in sequence; the number of the second electrodes is the same as the number of the transparent conductive layers, and are arranged in a one-to-one correspondence with the transparent conductive layers.

9. The LED light emitting structure according to claim 8, characterized in that: The insulating layer fills the gaps between the adjacent light-emitting units. A plurality of through holes are arranged in the insulating layer. The through holes correspond to the light-emitting units one by one. The first electrode is connected to the light-emitting unit via the through holes.

10. The LED light emitting structure according to claim 6, characterized in that: The transparent conductive layer is in the shape of strips arranged at intervals, or is a whole film layer that completely covers the surface of the light-emitting unit away from the first electrode and the surface of the insulating layer.

Citation Information

Patent Citations

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