Particle beam device, defect repair method, photolithography exposure process and photolithography system

Abstract

A particle beam apparatus is described, comprising: a stage configured to hold a semiconductor substrate; a particle beam source configured to generate a particle beam; a detector configured to detect a response of the substrate caused by an interaction of the particle beam with the substrate and output a detector signal representing the response; and a processing unit configured to: receive or determine the location of one or more defect target areas on the substrate; control the particle beam source to inspect the one or more defect target areas; identify one or more defects in the one or more defect target areas based on the detector signals acquired during the inspection of the one or more defect target areas; and control the particle beam source to repair the one or more defects.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to EP application 18195475.1 filed on September 19, 2018, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The invention relates to a particle beam device, a defect repairing method, a photolithography exposure process and a photolithography system. Background Art

[0004] A lithographic apparatus is a machine that applies a desired pattern to a substrate, usually to a target portion of the substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In this case, a pattern forming device (which is alternatively referred to as a mask or reticle) can be used to generate a circuit pattern to be formed on a single layer of the IC. The pattern can be transferred to a target portion (e.g., a portion including one or more dies) on a substrate (e.g., a silicon wafer). The transfer of the pattern is usually performed via imaging onto a layer of radiation-sensitive material (resist) disposed on the substrate. Typically, a single substrate will contain a network of adjacent target portions that are continuously patterned. Conventional lithographic apparatuses include: a so-called stepper, in which each target portion is irradiated by exposing the entire pattern to the target portion at once; and a so-called scanner, in which each target portion is irradiated by scanning the pattern by a radiation beam in a given direction (the "scanning" direction), while simultaneously scanning the substrate parallel or antiparallel to the direction. The pattern can also be transferred from the pattern forming device to the substrate by imprinting the pattern onto the substrate.

[0005] The radiation beam typically applied in a lithographic apparatus may be, for example, a DUV radiation beam (eg, having a wavelength of 248 nm or 193 nm) or an EUV radiation beam (eg, having a wavelength of 11 nm or 13.5 nm).

[0006] The manufacture of integrated circuits may often require stacking multiple layers, which requires precise alignment of the layers. Without this alignment, the required connections between the layers may be defective, resulting in integrated circuit failure.

[0007] Typically, one or more bottom layers of an integrated circuit will contain the smallest structures, such as transistors or their components. The structures of subsequent layers are usually larger and implement the connections between the structures in the bottom layer and the outside world. Given this, the alignment of the two layers will be the biggest challenge in the bottom of an integrated circuit.

[0008] As radiation beams with smaller wavelengths are applied, such as EUV radiation with a wavelength of 11 or 13.5 nm, it becomes more troublesome to ensure that each portion of the substrate being exposed receives an appropriate dose of radiation to correctly develop the exposure pattern. As the energy of the photons increases (photon energy is inversely proportional to wavelength), the total number of photons required to expose a particular feature decreases. In addition, the requirement to expose smaller features results in fewer photons contributing to the exposure process of the feature. As a result, it may happen that some features remain underexposed, i.e., do not receive sufficient dose or radiation.

[0009] In order to verify that the circuit or circuit layer is correctly patterned, the substrate is often inspected using inspection tools such as electron beam inspection tools. Such tools are used, for example, to evaluate whether certain process steps, for example, performed by a lithography apparatus, are performed as expected. As an example, using such inspection tools, it can be evaluated whether a specific area of ​​the substrate has been subjected to sufficient dose or radiation. Such an evaluation can then be used, for example, to optimize or adjust the exposure process of other substrates.

[0010] It is desirable to improve the functionality of inspection tools, such as e-beam inspection tools, in order to improve the overall lithographic manufacturing process of semiconductor devices. Summary of the invention

[0011] It is desirable to improve the functionality of inspection tools or devices, such as e-beam inspection tools.

[0012] In order to solve these problems, according to one aspect of the present invention, a particle beam device is provided, the particle beam device comprising:

[0013] - a stage configured to hold a semiconductor substrate;

[0014] - a particle beam source configured to generate a particle beam;

[0015] - a detector configured to detect a response of the substrate caused by the interaction of the particle beam with the substrate and to output a detector signal representative of the response;

[0016] - a processing unit, configured to:

[0017] a. receiving or determining the location of one or more defect target areas on a substrate;

[0018] b. Controlling the particle beam source to inspect one or more defect target areas;

[0019] c. identifying one or more defects within the one or more defect target regions based on detector signals acquired during inspection of the one or more defect target regions;

[0020] d. Control the particle beam source to repair one or more defects.

[0021] According to another aspect of the present invention, a defect repair method is provided, the defect repair method comprising:

[0022] - receiving a substrate comprising a patterned resist layer;

[0023] - receiving or determining the location of one or more defect target areas on a substrate;

[0024] - inspecting one or more defect target areas of the patterned resist layer;

[0025] - determining the location of one or more defects in one or more defect target areas based on the inspection;

[0026] - Modifying the patterned resist layer at the one or more defects to repair the defects.

[0027] According to another aspect of the present invention, a photolithography exposure process is provided, comprising:

[0028] - patterning a resist layer of the substrate by exposing the resist layer to a patterned radiation beam;

[0029] - Logging or recording exposure process data during exposure of the resist layer;

[0030] - determining the location of one or more defect target areas based on the exposure process data;

[0031] - inspecting one or more defect target areas, thereby identifying one or more defects in the one or more defect target areas;

[0032] - Modifying the patterned resist layer at the one or more defects to repair the defects. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Embodiments of the invention will now be described, by way of example only, with reference to the accompanying schematic drawings, in which corresponding reference numerals indicate corresponding parts, and in which:

[0034] Figure 1 depicts a lithographic apparatus that may be used in embodiments of the present invention;

[0035] Figure 2 depicts a particle beam apparatus according to an embodiment of the present invention;

[0036] Figure 3 shows the inspection and repair process of the contact hole array;

[0037] Figure 4 A flow chart of a defect repair method according to the present invention is depicted;

[0038] Figure 5A flow chart of a photolithography exposure process according to the present invention is depicted;

[0039] Figure 6a and 6b schematically depicts a top view and a side view of an inspection tool according to the present invention;

[0040] Figure 7 A more detailed embodiment of an inspection tool according to the invention is schematically depicted. DETAILED DESCRIPTION

[0041] Figure 1 A lithographic apparatus according to one embodiment of the invention is schematically depicted. The apparatus comprises an illumination system (illuminator) IL configured to condition a radiation beam B (e.g., UV radiation or any other suitable radiation); a mask support structure (e.g., mask stage) MT configured to support a pattern forming device (e.g., mask) MA and connected to a first positioning device PM, which is configured to accurately position the pattern forming device according to certain parameters. The apparatus also comprises a substrate stage (e.g., wafer stage) WT or "substrate support" configured to hold a substrate (e.g., a wafer coated with a resist) W and connected to a second positioning device PW, which is configured to accurately position the substrate according to certain parameters. The apparatus also comprises a projection system (e.g., a refractive projection lens system) PS configured to project a pattern imparted to the radiation beam B by the pattern forming device MA onto a target portion C (e.g., comprising one or more dies) of the substrate W.

[0042] The illumination system may include various types of optical components for directing, shaping, or controlling radiation, such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination thereof.

[0043] The mask support structure supports (i.e., carries) the weight of the pattern forming device. The mask support structure holds the pattern forming device in a manner that depends on the orientation of the pattern forming device, the design of the lithographic apparatus, and other conditions (such as, for example, whether the pattern forming device is held in a vacuum environment). The mask support structure can use mechanical, vacuum, electrostatic or other clamping techniques to hold the pattern forming device. The mask support structure can be a frame or a stage, for example, which can be fixed or movable as required. The mask support structure MT can ensure that the pattern forming device is in a desired position, for example relative to the projection system. Any use of the term "reticle" or "mask" herein can be considered to be synonymous with the more general term "pattern forming device".

[0044] The term "patterning device" as used herein should be broadly interpreted as referring to any device that can be used to impart a pattern to a cross-section of a radiation beam so as to create a pattern in a target area of ​​the substrate. It should be noted that the pattern imparted to the radiation beam may not exactly correspond to the desired pattern in the target portion of the substrate, for example if the pattern includes phase-shifting features or so called assist features. Typically, the pattern imparted to the radiation beam will correspond to a specific functional layer in a device created in the target portion such as an integrated circuit.

[0045] The patterning device may be transmissive or reflective. Examples of patterning devices include masks, programmable mirror arrays, and programmable LCD panels. Masks are well known in lithography and include mask types such as binary, alternating phase shift, and attenuated phase shift, as well as various hybrid mask types. An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted to reflect an incoming radiation beam in different directions. The tilted mirrors impart a pattern in the radiation beam, which is reflected by the matrix of mirrors.

[0046] The term "projection system" as used herein should be broadly interpreted as covering any type of projection system, including refractive, reflective, catadioptric, magnetic, electromagnetic and electrostatic optical systems, or any combination thereof, as appropriate to the exposure radiation used or other factors such as the use of immersion liquid or the use of vacuum, etc. Any use of the term "projection lens" herein may be considered synonymous with the more general term "projection system".

[0047] As depicted here, the device is of the transmissive type (eg, employing a transmissive mask). Alternatively, the device may be of the reflective type (eg, employing a programmable mirror array of the type described above, or employing a reflective mask).

[0048] The lithographic apparatus may be of a type having two (dual stage) or more substrate tables or "substrate supports" (and / or two or more mask tables or "mask supports"). In such a "multi-stage" machine, the additional tables or supports may be used in parallel, or preparation steps may be carried out on one or more tables or supports while one or more other tables or supports are being used for exposure.

[0049] The lithographic apparatus may also be of a type in which at least a portion of the substrate may be covered by a liquid having a relatively high refractive index (e.g., water) to fill the space between the projection system and the substrate. Immersion liquid may also be applied to other spaces in the lithographic apparatus, such as between the mask and the projection system. Immersion techniques may be used to increase the numerical aperture of the projection system. The term "immersion" as used herein does not mean that structures such as the substrate must be submerged in the liquid, but only that the liquid is located between the projection system and the substrate during exposure.

[0050] refer to Figure 1 , the illuminator IL receives a radiation beam from a radiation source SO. The light source and the lithographic apparatus may be separate entities, for example when the light source is an excimer laser. In this case, the light source is not considered to form part of the lithographic apparatus, and the radiation beam is transferred from the source SO to the illuminator IL with the aid of a beam transmission system BD comprising, for example, suitable guide mirrors and / or a beam expander. In other cases, the light source may be an integral part of the lithographic apparatus, for example when the light source is a mercury lamp. The source SO and the illuminator IL, and the beam transmission system BD if necessary, may be referred to together as a radiation system.

[0051] The illuminator IL may include an adjuster AD configured to adjust the angular intensity distribution of the radiation beam. Typically, at least the outer and / or inner radial extent (commonly referred to as outer σ and inner σ, respectively) of the intensity distribution in a pupil plane of the illuminator may be adjusted. In addition, the illuminator IL may include various other components, such as an integrator IN and a condenser CO. The illuminator may be used to adjust the radiation beam to have a desired uniformity and intensity distribution in its cross-section.

[0052] The radiation beam B is incident on a patterning device (e.g. a mask MA) held on a mask support structure (e.g. a mask table MT) and is patterned by the patterning device. After passing through the mask MA, the radiation beam B passes through a projection system PS which focuses the beam onto a target portion C of the substrate W. With the aid of a second positioning device PW and a position sensor IF (e.g. an interferometric device, a linear encoder or a capacitive sensor), the substrate table WT can be precisely moved (e.g. in order to position a different target portion C in the path of the radiation beam B). Similarly, the first positioning device PM and a further position sensor (in Figure 1 The first positioning device PM may be a stepper device (not explicitly shown in the figure) which may be used to accurately position the mask MA relative to the path of the radiation beam B (for example, after mechanical retrieval from a mask library, or during scanning). In general, movement of the mask table MT may be achieved with the aid of a long-stroke module (coarse positioning) and a short-stroke module (fine positioning) which form part of the first positioning device PM. Similarly, movement of the substrate table WT or "substrate support" may be achieved using a long-stroke module and a short-stroke module which form part of the second positioning device PW. In the case of a stepper (as opposed to a scanner), the mask table MT may be connected to the short-stroke actuator only, or it may be fixed. The mask MA and the substrate W may be aligned using mask alignment marks M1, M2 and substrate alignment marks P1, P2. Although the substrate alignment marks (as shown) occupy dedicated target portions, they may be located in the space between target portions (called scribe alignment marks). Similarly, where more than one die is provided on the mask MA, the mask alignment marks may be located between the dies.

[0053] The depicted device can be used in at least one of the following modes:

[0054] 1. In step mode, the mask table MT or "mask support" and the substrate table WT or "substrate support" remain substantially stationary while an entire pattern imparted to the radiation beam is projected onto a target portion C at one time (i.e. one static exposure). The substrate table WT or "substrate support" is then moved in the X and / or Y direction so that a different target portion C can be exposed. In step mode, the maximum size of the exposure field limits the size of the target portion C that is imaged in one static exposure.

[0055] 2. In scan mode, the mask table MT or "mask support" and the substrate table WT or "substrate support" are scanned synchronously while a pattern imparted to the radiation beam is projected onto a target portion C (i.e. a single dynamic exposure). The speed and direction of the substrate table WT or "substrate support" relative to the mask table MT or "mask support" may be determined by the (de-)magnification and image reversal characteristics of the projection system PS. In scan mode, the maximum size of the exposure field limits the width of the target portion (in the non-scanning direction) in a single dynamic exposure, while the length of the scanning movement determines the height of the target portion (in the scanning direction).

[0056] 3. In another mode, the mask table MT or "mask support" is kept substantially stationary so as to hold the programmable patterning device, and the substrate table WT or "substrate support" is moved or scanned while a pattern imparted to the radiation beam is projected onto a target portion C. In this mode, typically a pulsed radiation source is employed and the programmable patterning device is updated as required after each movement of the substrate table WT or "substrate support" or between successive radiation pulses during a scan. This mode of operation can be readily applied to maskless lithography utilizing a programmable patterning device, such as a programmable mirror array of the type described above.

[0057] Combinations and / or variations on the above-described modes of use or entirely different modes of use may also be employed.

[0058] In the embodiment shown, the lithographic apparatus further comprises an inspection tool IT according to the invention. Such an inspection tool IT may, for example, enable the determination of properties of structures, in particular buried structures, present on or in a region of interest of a substrate W processed by the lithographic apparatus. In one embodiment, as will be discussed in more detail below, the inspection tool may comprise an electron beam source for inspecting the substrate.

[0059] In an embodiment, the second positioning device PW may be configured to position the substrate W within the operating range of the inspection tool IT. In such an embodiment, the inspection tool IT may, for example, be configured to determine the properties of the mentioned structures, such as electrical properties, material properties and / or geometrical properties. In an embodiment, this information may then be provided to a control unit of the lithographic apparatus and used during the exposure process, for example by controlling one or more of the illumination system, the projection system or one of the positioning devices based on this information.

[0060] In the embodiment shown, the lithographic apparatus may be configured to apply DUV radiation to the radiation beam. In this case, the patterning device MA may be a transmissive patterning device and the projection system PS may include one or more lenses.

[0061] Alternatively, the lithographic apparatus according to the invention may be configured to apply EUV radiation to the radiation beam. In this case, the patterning device MA may be a reflective patterning device and the projection system PS may include one or more mirrors. In such an embodiment, the apparatus may include one or more vacuum chambers for accommodating the illumination system IL and / or the projection system PS.

[0062] According to one aspect of the present invention, a lithography apparatus may include an inspection and repair apparatus or a particle beam apparatus according to the present invention, so as to perform online or offline inspection and repair on a substrate to be processed or already processed.

[0063] According to one aspect of the present invention, there is provided a particle beam apparatus configured to inspect an object such as a semiconductor substrate and also configured to repair certain defects on the object when necessary. Figure 2 Schematically shown is an embodiment of such a particle beam device 10. In the shown embodiment, the particle beam device comprises a particle beam source 11. In one embodiment, the particle beam source 11 comprises an electron beam source (also called e-beam source).

[0064] A particle beam source 11 (such as an electron beam source) is generally known and can be applied in the present invention to project a particle beam 12 (e.g., an electron beam) onto an area of ​​an object 13 (e.g., a substrate). In the illustrated embodiment, the object 13 is mounted to the object stage 13.2 of the device by means of a clamping mechanism 13.4 (e.g., a vacuum clamp or an electrostatic clamp). In the case of an electron beam source, the above source can, for example, be used to generate an electron beam 12 with an energy in the range of 0.2keV to 100keV. The particle beam source 11 can generally have one or more lenses for focusing the particle beam 12 onto the object 13. In one embodiment, the device 10 can also include one or more scanning coils or deflection plates that can deflect the particle beam 12. By doing so, the particle beam 12 can, for example, be deflected along the X-axis and Y-axis (perpendicular to the X-axis and Z-axis), and the XY plane is parallel to the surface of the object, so that the area of ​​the object can be scanned. The arrangement of one or more scanning coils or deflection plates can be referred to as a beam deflector. Such a beam deflector can be configured to guide the particle beam to the desired position of the object 13. In one embodiment of the present invention, the particle beam source is configured to project multiple electron beams onto corresponding multiple sub-areas of the object 13. By doing so, the region of interest that can be examined or inspected per unit time can be enlarged. In addition, in an embodiment of the present invention, the particle beam source can be configured to change or adjust the energy level or dose of the one or more particle beams generated. In such an embodiment, the particle beam source can therefore be configured to change the current that characterizes the one or more electron beams.

[0065] In the case of an electron beam applied as a particle beam, various interactions on the surface will occur, as well as interactions with the material beneath the surface, resulting in the emission of both radiation and electrons from the exposed surface. Typically, when such an electron beam 12 interacts with a sample, the electrons that make up the beam will release energy through scattering and absorption within a teardrop-shaped volume, called the interaction volume. The energy exchange between the electron beam and the sample will typically result in a combination of: - the emission of secondary electrons by inelastic scattering,

[0066] - the emission of electrons reflected or backscattered out of the interaction volume by elastic scattering interaction with the sample,

[0067] - coupling to phonons (lattice vibrations)

[0068] -X-ray emission, and

[0069] - Emission of electromagnetic radiation, for example in the range from deep UV to IR.

[0070] The latter emission of electromagnetic radiation is often referred to as cathodoluminescence or CL light.

[0071] In an embodiment of the present invention, the particle beam device 10 further comprises a detector 15. Such a detector may be configured to detect a specific interaction of an electron beam, typically a particle beam, with an object. As an example, the detector 15 may be configured to detect secondary electrons. In one embodiment, the particle beam device 10 may comprise a plurality of detectors, each of which is configured to detect a specific interaction between a particle beam and an object. In the illustrated embodiment, the particle beam device further comprises a detector 15.1 for detecting backscattered electrons emitted by the object 13.

[0072] exist Figure 2 In FIG. 1 , arrows 14 indicate emitted secondary or backscattered electrons.

[0073] According to the present invention, one or more detectors (e.g., detectors 15 and 15.1) are configured to detect a response of the substrate caused by the interaction of the particle beam 12 with the object 13 (e.g., a semiconductor substrate). One or more detectors may also be configured to output a detector signal representing the detected response (e.g., detected secondary or backscattered electrons).

[0074] In one embodiment of the present invention, the particle beam apparatus includes a secondary electron detector for performing a low-dose inspection scan to inspect one or more defect target areas, as will be described in more detail below.

[0075] In the illustrated embodiment, the particle beam device further comprises a processing unit 17, eg comprising a microprocessor, a computer or the like, for processing detector signals received from the detectors, eg representing emitted secondary or backscattered electrons detected by the detectors 15 and 15.1.

[0076] In the embodiment shown, the processing unit 17 comprises an input terminal 17.2 for receiving a detector signal 15.2 from the detector 15, 15.1, for example a signal 15.2 representing detected emitted secondary or backscattered electrons.

[0077] In this embodiment, the processing unit further has an output terminal 17 . 4 for outputting a control signal 11 . 2 for controlling the particle beam source 11 .

[0078] Particle beam device according to the present invention is also configured to check the semiconductor substrate that has been provided with patterned resist layer, and corrects or repairs some defects in the patterned resist layer found during inspection when necessary.In order to realize this point, the processing unit 17 of particle beam device according to the present invention is configured to check one or more target areas on the substrate, and this target area potentially comprises one or more defects and / or has the risk of increasing and can comprise one or more defects.Such target area is also referred to as defect target area or defect prone target area.

[0079] In one embodiment of the invention, the processing unit 17 of the particle beam device is configured to receive an input signal 11.1 representing the location of one or more defect target regions of the substrate to be inspected, for example at an input terminal 17.2.

[0080] Alternatively or additionally, the processing unit 17 of the particle beam device 10 can be configured to determine the position of one or more defect target areas based on the received information. In particular, in an embodiment of the present invention, the processing unit 17 of the particle beam device is configured to receive exposure process data, for example, from a lithography device that has performed an exposure process and thus formed a patterned resist layer. In such an embodiment, the input signal 11.1 received by the processing unit 17 can therefore represent such exposure process data. As will be explained in more detail below, based on the received exposure process data, the processing unit 17 can be configured to determine which positions on the substrate may have defect features or structures.

[0081] According to the present invention, when the position of one or more defective target areas has been determined or received, the processing unit 17 of the particle beam device can implement control of the particle beam source and / or the beam deflector to inspect the defective target area. In one embodiment, such an inspection may involve scanning the defective target area using a particle beam generated by a particle beam source. As described above, during such a scan of the defective target area, the response of the substrate to the above-mentioned particle beam can be detected by a detector of the particle beam device. During such a scan, the detector can, for example, record the received response and / or generate an output signal (referred to as a detector signal) representing the received response. The received response of the detector can, for example, include radiation or particles emitted by the substrate in response to the incident particle beam. Note that after a scan of one or more defective target areas has been performed, a detector signal representing the received response can also be generated and output. As Figure 2As shown, one or more detector signals 15.2 representing the received responses of the detectors may be provided to a processing unit 17. According to the present invention, the processing unit 17 may then be configured to identify one or more defects within the one or more defect target areas based on the received detector signals. In particular, the processing unit may be configured to determine the location of one or more defects within the one or more defect target areas.

[0082] As an example, the patterned resist layer may include a pattern representing a plurality of contact holes. Typically, as also referred to above Figure 1 As shown, the substrate is provided with a plurality of target portions, whereby a specific pattern, for example a pattern comprising a plurality of contact holes, is provided to each of these target portions.

[0083] If one or more contact holes are subjected to an insufficient radiation dose during exposure performed by the lithographic apparatus, or if a particular portion of the target portion of the substrate is somewhat out of focus, the contact holes may not have the required size and may therefore be considered a defect.

[0084] According to the present invention, the particle beam device is configured to repair such defects when such defects are encountered. In particular, according to the present invention, the processing unit 17 of the particle beam device 10 is configured to control the particle beam source to repair the defects found due to the inspection of the defect target area. Such repair can be achieved, for example, by subjecting the defect (i.e., defect feature or structure) to a particle beam (e.g., an electron beam).

[0085] Those skilled in the art will recognize that when a resist layer (e.g., a patterned resist layer on a substrate) is subjected to a particle beam (e.g., an electron beam), the particle beam can affect the patterned resist layer. In particular, applying a particle beam to the resist layer can result in a change in the geometry of the resist layer. This phenomenon is commonly referred to as resist shrinkage.

[0086] Such shrinkage of the resist occurs because the applied electron beam locally heats the resist, causing degassing or reconfiguration of the resist's polymers. Heat is generated because the electrons transfer part of their energy to the material through phonon coupling.

[0087] Typically, this phenomenon is an undesirable side effect of the inspection process applied in a particle beam inspection tool, such as an electron beam (e-beam) or electron beam (e-beam) inspection tool.

[0088] Typically, to obtain a sufficient signal-to-noise ratio, an inspection tool such as an electron beam inspection tool scans a region of interest multiple times, whereupon the multiple scans are combined to obtain an image or representation of the region of interest. However, during each of these scans, the scanned region is affected.

[0089] In an embodiment of the present invention, the resist shrinkage phenomenon is intentionally applied to modify the patterned resist layer in order to repair defects in the patterned resist layer.

[0090] In an embodiment of the present invention, the particle beam device is an electron beam device. In such a device, the particle beam source can be an electron beam source or an electron beam source. In such an embodiment, the processing unit of the device can be configured to inspect one or more defect target areas on the substrate by means of an electron beam to detect the presence of defects in the defect target area. When such defects are found, the processing unit can then be configured to control the electron beam source to correct the defects. As an example, a defective contact hole can be mentioned. In order to meet the requirements, the diameter and depth of the contact hole should be within a predetermined range. If the radiation dose received by the contact hole is insufficient, the contact hole may be too small (too small in diameter) or insufficient in depth or both. Using an electron beam, a defective contact hole can be repaired so that the diameter and depth are within the desired range. Figure 3 Such an embodiment is schematically shown in FIG. Figure 3 The upper part of schematically depicts a portion of a patterned resist layer 100 used in the process of generating an array of contact holes, the patterned resist layer comprising a plurality of holes (indicated by the outlines 110 of the holes). The dashed line 120 represents the minimum diameter of the holes for producing suitable contact holes. An image of such a portion of the patterned resist layer 100 can be obtained, for example, using a particle beam device according to the present invention. By scanning a portion of the patterned resist layer 100, for example using an electron beam, an image of the holes in the patterned resist layer 100 can be acquired. By using, for example, Figure 2The processing unit 17 shown processes such an image, and the contour 110 of the hole can be obtained, and the accuracy of the hole can be evaluated, that is, whether the size of the hole is within the specification range. In the embodiment shown, the portion of the patterned resist layer 100 can, for example, correspond to one of the defect target areas of the patterned resist layer, that is, the area where defects may occur. In the embodiment shown, there are two defects in the portion of the patterned resist layer 100; it can be seen that the contours of the holes 100.1 and 100.2 in the plurality of holes 110 are located within the minimum diameter 110, that is, they are too small. In one embodiment, the defect (that is, the defective hole) can be repaired using a particle beam device according to the present invention. In particular, a particle beam (for example, an electron beam of a particle beam device according to the present invention) can be used to enlarge the defective hole. In particular, by scanning the defective hole again using a particle beam (for example, an electron beam), the defective hole can be enlarged. Alternatively or additionally, an electron beam can be used to scan along the circumference of the defective hole to enlarge the defective hole. Such additional scans may, for example, include scans along the contours 100.1 and 100.2 and / or scans along the desired diameter 120 of the contact hole. By doing so, the patterned resist layer is modified such that the observed or identified defects are repaired. Figure 3 The bottom of schematically shows a portion of the patterned resist layer 100 after applying an additional scan using a particle beam. It can be seen that the defective holes have been repaired, as shown by the enlarged outlines 100.11 and 100.21.

[0091] Thus, in one embodiment, the present invention provides a particle beam apparatus that can inspect a region of interest (eg, a region on a substrate where one or more defects may occur) and repair observed defects.

[0092] In one embodiment, the particle beam device according to the present invention can be configured to perform two operations using the same particle beam source, i.e., inspecting a substrate, in particular a patterned resist layer of the substrate; and repairing a substrate, in particular a defect of a patterned resist layer of the substrate. As an example, the particle beam source may include an electron beam source. In such an embodiment, the processing unit of the particle beam device may be configured to control the particle beam source so as to inspect one or more defect target areas with a particle beam having a first operating parameter set point, thereby controlling the particle beam source to repair one or more defects with a particle beam having a second operating parameter set point intensity. In one embodiment, the changed operating parameter is the intensity of the particle beam, or the current of the particle beam, or the dwell time of the particle beam. Each of these operating parameters can be considered to affect the applied dose, for example, expressed as μC / cm2 or the number of electrons / nm2. In one embodiment of the present invention, the applied dose should be relatively low for the inspection step, and relatively high for the repair or modification step. Therefore, in such an embodiment, the step of inspecting one or more defect target areas is performed with a lower current, a shorter dwell time or a lower intensity compared to the step of repairing the defect. By doing so, as will be appreciated by those skilled in the art, the undesirable effects of resist shrinkage during the inspection step can be kept to a minimum, while the desired resist shrinkage during the repair step can be exaggerated. In practice, local control of the applied dose (i.e., the amount of energy received at a particular location) can be achieved by controlling the dwell time (i.e., the time the beam dwells at a particular location).

[0093] Typically, the landing energy and beam current can be kept at fixed values; a typical landing energy can be between 300 and 800 eV, and a typical beam current can be between 1 and 100 nA. For inspection, a typical required dose would be about 30 electrons per pixel, with a pixel size between 0.5 and 1 nm. For defect repair, the required dose can be, for example, four times higher, for example, 120 electrons per pixel.

[0094] Alternatively, a particle beam device according to the present invention may include two different particle beam sources. In such a device, a particle beam source may for example include a first particle beam source for checking one or more defect target areas and a second particle beam source for repairing one or more defects. In such an embodiment, the particle beam source may be selected based on required tasks. In particular, a particle beam source with less or lower invasiveness may be selected to perform the inspection of one or more defect target areas, thereby reducing the resist shrinkage effect during the inspection, and a particle beam source with greater invasiveness may be selected to perform the repair step.

[0095] In an embodiment of the present invention, a low voltage and low current electron source of a CD-SEM may be applied to inspect defective areas, while a high voltage and high current beam may be applied to locally repair defects.

[0096] In an embodiment of the invention, the inspection step is performed by means of an electron beam source, whereas heavier particles such as ions are used to perform the repair step.

[0097] In the embodiment described above, one or more defects identified based on the inspection results of the defect target area are repaired by shrinking the material, so as to, for example, expand the size of the contact hole. As described above, this shrinking of the material can be achieved by subjecting the patterned resist layer to a particle beam such as an electron beam.

[0098] Alternatively, the present invention can be applied to repair defects by adding material. To ensure proper operation of the semiconductor device being manufactured, the size of the patterned structures and / or features must be within predetermined limits. Typically, the size of the structures and / or features needs to be within a certain range, for example, with upper and lower boundaries or limits or thresholds. Reference Figure 3 In the example of, contact holes such as contact hole 110 may have a required minimum diameter, for example, as shown in the figure, a diameter of 120, and the same is true for the maximum diameter. In this way, contact holes that are too large in size may be patterned, that is, too much material (that is, resist material) is removed thereby. If such defects are identified, they can be repaired by the addition of materials. Such addition can be achieved, for example, by means of electron beam induced deposition (EBID) or ion beam induced deposition (IBID). Such electron beam or ion beam induced deposition (EBID / IBID) involves decomposing gaseous molecules by means of an electron beam. When such an electron beam is incident on a substrate and gaseous molecules are directed to the substrate, when the gaseous molecules are decomposed by the electron beam, the material can be deposited on the substrate.

[0099] According to one aspect of the present invention, there is provided a defect repair method, which includes modifying a patterned resist layer obtained by an exposure process so as to repair one or more defects found in the patterned resist layer.

[0100] Figure 4The flow chart of the method is schematically shown. The defect repair method according to the present invention includes a first step 400 of receiving a substrate including a patterned resist layer. Such a patterned resist layer can be generated, for example, by an exposure process performed by a lithography device. In the next step 410, the defect repair method includes receiving or determining the position of one or more defect target areas on the substrate. In one embodiment, step 410 may involve receiving information indicating the position of one or more defect target areas (i.e., areas on the substrate that may contain defects). Such information can be obtained, for example, from a lithography device that has performed an exposure process to produce a patterned resist layer. The lithography device that performs the exposure process can, for example, determine at which positions on the substrate the exposure process may not be optimal, or at which positions certain process parameters are outside the expected range based on the process parameters recorded in the log during the exposure process.

[0101] Alternatively, step 410 may involve determining the location of one or more defect target regions on the substrate.Such a determination may, for example, be based on exposure process data representative of an exposure process performed to produce the patterned resist layer.

[0102] In a next step 420, the defect repair method according to the present invention comprises inspecting the patterned resist layer for one or more defect target areas. Such inspection may be performed, for example, using a particle beam device, such as a particle beam device according to the present invention.

[0103] In the next step 430, the defect repair process according to the present invention includes identifying one or more defects in one or more defect target areas based on inspection. In such a step, the method according to the present invention may involve determining the location or position of a structure or feature by processing inspection data (whether certain patterned structures or features are defective, for example, having dimensions or other features that exceed the specification range) and when such defective structures or features are found. As described above, when the size of a structure or feature is outside a predetermined boundary (for example, both an upper boundary and a lower boundary), the structure or feature may be considered defective, that is, identified as a defect. Therefore, the structure or feature may be too small or too large, or may have a shape that deviates from the desired shape. The step of identifying one or more defects may also include determining the location of one or more defects within the defect target area.

[0104] In a next step 440, the defect repair method according to the present invention comprises modifying the patterned resist layer at one or more defects to repair the defects. As already mentioned above, modifying the patterned resist layer to repair the defects may involve causing shrinkage of the material of the patterned resist layer and / or addition of material.

[0105] Such shrinking of material may be achieved, for example, using a particle radiation beam (eg, an electron beam).Addition of material may be achieved, for example, by using deposition methods such as electron beam induced deposition or EBID or ion beam induced deposition or IBID.

[0106] In one embodiment, the step of adding material may be followed by a step of removing material, thereby, for example, removing part of the deposited material. Such an embodiment may be beneficial in situations where the precision of the material deposition step may be low or insufficient.

[0107] According to an embodiment of the present invention, steps 420 and 440 can be performed, for example, using a particle beam device. Such a particle beam device can include a single particle beam source, which can, for example, operate with different intensities. Alternatively, the particle beam device can have two or more particle beam sources, for example, an electron beam device, which operate with different intensities and / or generate different particle beams, i.e., beams composed of different particles (e.g., ions and electrons).

[0108] According to one aspect of the present invention, a photolithography exposure process is provided. Figure 5 A flow chart of such an exposure method is schematically shown.

[0109] In a first step 500, the method includes patterning a resist layer of a substrate by exposing the resist layer to a patterned radiation beam. The method also includes a second step 510 of logging or recording exposure process data during the exposure of the resist layer. As will be appreciated by those skilled in the art, a typical exposure process of a resist layer of a substrate performed by means of a lithography apparatus may involve scanning the substrate by a patterned radiation beam. In such an arrangement, the patterned radiation beam of the exposure substrate may be, for example, slit-shaped, for example, having a width across a target portion on the substrate to be exposed. In order to accurately pattern the resist layer, various operating parameters need to be continuous within a strict specification range. In particular, in order to properly pattern the resist layer with a desired pattern, each portion of the exposed substrate should receive an appropriate dose of radiation. In addition, the exposed portion of the substrate should be kept in or near the focal plane of the patterned radiation beam so as to accurately pattern the substrate. With regard to the latter, it can be noted that the surface of the substrate may not be completely flat, making it difficult to keep the exposure area of ​​the substrate in focus. In this regard, it may be noted that, typically before exposing the substrate to the patterned radiation beam, the substrate may be scanned with a height sensor (also referred to as a level sensor) to determine a height map of the substrate. Such a height map may then be used to control the position of the stage on which the substrate is positioned so that the exposed portion of the substrate is as good as possible in the focal plane of the patterned radiation beam. During the exposure process, actual operating parameters, such as the position of the stage or the dose applied, may be monitored and logged or recorded. Such data (also referred to as exposure process data in the present invention) may be used to determine locations on the exposed substrate where defects may have occurred. Using such exposure process data, for example also including the determined height map of the substrate, locations where one or more operating parameters on the exposed substrate are outside the desired range may be identified. As an example, based on the exposure process data, it may be determined that certain locations on the substrate where an insufficient dose of radiation has been applied or where portions of the substrate are outside the focal plane of the patterned radiation beam. Within the meaning of the present invention, such locations are referred to as defect target areas. The technique for determining the location of defect areas using operating parameters logged or recorded during the exposure process may be referred to as pattern fidelity metrology. More details about this technique can be found, for example, in US9,990,451, US9,507,907, US9842186, and US2018 / 0031981, all of which are incorporated herein by reference. Thus, in a third step 520, the lithography exposure process according to the present invention includes determining the location of one or more defect target areas based on the exposure process data. As described above, the location of such areas, i.e., areas that potentially contain one or more defects due to substandard exposure processes, can be determined using logged or recorded exposure process data.In an embodiment of the present invention, the determination of one or more locations of the defect target area can be performed by a lithography device that has performed an exposure process. Alternatively, the exposure process data can be provided to an inspection tool or device, such as a particle beam device according to the present invention. Such a device can then perform step 520 to determine the location of one or more defect target areas.

[0110] In a fourth step 530, the lithographic exposure process according to the invention comprises inspecting one or more defect target regions to identify one or more defects in the one or more defect target regions. Such an inspection step may be performed, for example, using a particle beam apparatus according to the invention.

[0111] In the fifth step 540, the method includes modifying the patterned resist layer at one or more defects to repair defects. Such a step can be performed, for example, by exposing the defects to a particle beam (e.g., an electron beam) to correct the patterned resist layer. In one embodiment, as also described above, the step of modifying the patterned resist layer can therefore involve the deliberate contraction of some parts of the patterned resist layer to repair defects. The contraction of the part of the patterned resist layer can be completed, for example, using a particle beam such as an electron beam. Subjecting the resist layer to such a particle beam can cause the contraction of the resist at the position where the particle beam hits the substrate. In a particle beam device, the particle beam can be aligned to the desired position with high precision so that the resist layer can be selectively modified. In particular, the application of an electron beam or other types of particle beams may result in a phenomenon known as resist contraction, whereby the size of the patterned structure is affected by the application of a particle beam such as an electron beam. Alternatively or additionally, the step of modifying the patterned resist layer can involve adding material to the patterned resist layer, for example, by means of deposition methods such as electron beam induced deposition.

[0112] By means of the fifth step 540 , ie, modifying the patterned resist layer by removing or adding material, defects such as structures or features having dimensions outside of a desired range may be corrected or repaired.

[0113] According to one aspect of the present invention, a lithography system is provided, which is configured to perform a lithography exposure process according to the present invention. Such a lithography system may, for example, include Figure 1 The photolithography apparatus shown is used to perform steps 500 and 510 of the photolithography exposure process according to the present invention. Such a system may also include a particle beam apparatus according to the present invention, which is used to perform steps 530 and 540 of the photolithography exposure process according to the present invention. In such a system, the photolithography apparatus or the particle beam apparatus may be configured to perform step 520 of determining the location of one or more defect target regions.

[0114] For completeness, the following Figure 6a , 6b 7 schematically show some further details of a particle beam device which can be applied in a particle beam device or a lithography system according to the present invention.

[0115] Fig. 6A and 6B schematically depict a top view and a cross-sectional view of a particle beam device 50 according to an embodiment of the present invention. The illustrated embodiment includes a housing 51, a pair of loading ports 52, and the loading port 52 is used as an interface for receiving an object to be inspected and outputting the object that has been inspected. The embodiment as shown also includes an object transfer system referred to as an EFEM (equipment front end module) 53, which is configured to process objects and / or transfer objects to and from the loading port. In the illustrated embodiment, the EFEM 53 includes a processor robot 54, which is configured to transport objects between the loading port and the loading lock 55 of the EBI system 50. The loading lock 55 is an interface between the atmospheric conditions that appear outside the housing 51 and in the EFEM and the vacuum conditions that appear in the vacuum chamber 56 of the inspection tool 50. In the illustrated embodiment, the vacuum chamber 56 includes a particle beam source 57, which is configured to project an electron beam or a particle beam onto an object to be inspected and / or repaired (e.g., a semiconductor substrate or a wafer). The particle beam device 50 further comprises a positioning device 58 which is configured to move the object 59 relative to the particle beam generated by the particle beam source 57 .

[0116] In one embodiment, the positioning device may include a cascade arrangement of multiple positioners, such as an XY stage for positioning the object in a substantially horizontal plane and a Z stage for positioning the object in a vertical direction.

[0117] In one embodiment, the positioning device may include a coarse locator configured to provide a coarse positioning of the object over a relatively large distance and a fine locator configured to provide a fine positioning of the object over a relatively small distance.

[0118] In one embodiment, the positioning device 58 further comprises an object stage for holding the object during the inspection performed by the particle beam device 50. In such an embodiment, the object 59 may be clamped to the object stage by means of a clamp such as an electrostatic clamp. Such a clamp may be integrated in the object stage.

[0119] Figure 7 A more detailed embodiment of a particle beam device 200 according to the invention which may be configured to perform the defect repair method according to the invention is schematically shown. The particle beam device 200 comprises an electron beam source (referred to as electron gun 210 ) and an imaging system 240 .

[0120] The electron gun 210 includes an electron source 212, a suppressor electrode 214, an anode 216, a set of apertures 218, and a condenser 220. The electron source 212 may be a Schottky emitter or a modified Schottky emitter as described above. Through the positive charge of the anode 216, the electron beam 202 may be extracted, and the electron beam 202 may be controlled by using a tunable aperture 218, which may have different aperture sizes to eliminate unnecessary electron beams outside the aperture. In order to converge the electron beam 202, a condenser 220 is applied to the electron beam 202, which also provides amplification. Figure 7 The light concentrator 220 shown may be, for example, an electrostatic lens that can converge the electron beam 202. On the other hand, the light concentrator 220 may also be a magnetic lens.

[0121] The imaging system 240 may include, for example, a shield, a set of holes 242, a detector 244, four sets of deflectors 250, 252, 254 and 256, a pair of coils 262, a yoke 260 and an electrode 270. The electrode 270 may be used to delay and deflect the electron beam 202, and may also have an electrostatic lens function. In addition, the coil 262 and the yoke 260 may be configured to a magnetic objective lens.

[0122] Deflectors 250 and 256 can be applied to scan the electron beam 202 to a large field of view, and deflectors 252 and 254 can be used to scan the electron beam 202 to a small field of view. All deflectors 250, 252, 254 and 256 can control the scanning direction of the electron beam 202. Deflectors 250, 252, 254 and 256 can be electrostatic deflectors or magnetic deflectors. The opening of the yoke 260 faces the sample 300 to immerse the magnetic field into the sample 300. On the other hand, the electrode 270 is placed below the opening of the yoke 260, and therefore the sample 300 will not be damaged. In order to correct the chromatic aberration of the electron beam 202, the retarder 270, the sample 300 and the yoke 260 or a portion thereof can form a lens to eliminate the chromatic aberration of the electron beam 202. The particle beam device 200 also includes a processing unit 310, which can be embodied as a processor, a microprocessor, a controller, or a computer, for example. The processing unit 310 is configured to receive response signals from one or more detectors of the inspection tool (e.g., detector 244) and process the response signals into an image of the scanned or inspected structure or sample 300.

[0123] The embodiments may be further described using the following terms:

[0124] 1. A particle beam device, comprising:

[0125] - a stage configured to hold a semiconductor substrate;

[0126] - a particle beam source configured to generate a particle beam;

[0127] - a detector configured to detect a response of the substrate caused by the interaction of the particle beam with the substrate and to output a detector signal representative of the response;

[0128] - a processing unit, configured to:

[0129] ○ receiving or determining the location of one or more defect target areas on the substrate;

[0130] ○ controlling the particle beam source to inspect the one or more defect target areas;

[0131] o identifying a defect within the one or more defect target areas based on the detector signals acquired during the inspection of the one or more defect target areas

[0132] one or more defects;

[0133] o Controlling the particle beam source to repair the one or more defects.

[0134] 2. A particle beam apparatus according to clause 1, wherein the particle beam source comprises a beam deflector configured to direct the particle beam onto the substrate.

[0135] 3. The particle beam apparatus according to clause 1 or 2, wherein the processing unit is configured to control the intensity of the particle beam.

[0136] 4. A particle beam device according to claim 3, wherein the processing unit is configured to control the particle beam source to inspect the one or more defect target areas with a particle beam having a first intensity and to control the particle beam source to repair the one or more defects with a particle beam having a second intensity, the second intensity being higher than the first intensity.

[0137] 5. A particle beam apparatus according to any of the preceding clauses, wherein the particle beam source comprises an electron beam source.

[0138] 6. The particle beam apparatus according to any of the preceding clauses, wherein the particle beam source comprises a first particle beam source and a second particle beam source.

[0139] 7. The particle beam apparatus of clause 6, wherein the first particle beam source comprises an electron beam source and the second particle beam source comprises an ion beam source.

[0140] 8. The particle beam apparatus of clause 6, wherein the first particle beam source comprises a first electron beam source and the second particle beam source comprises a second electron beam source.

[0141] 9. The particle beam apparatus according to any of clauses 6 to 8, wherein the processing unit is configured to control the first particle beam source to inspect the one or more defect target areas, and control the second particle beam source to repair the one or more defects.

[0142] 10. Particle beam apparatus according to any of the preceding clauses, wherein the processing unit is configured to receive an input signal representing the position of the one or more defect target regions.

[0143] 11. A particle beam apparatus according to any one of clauses 1 to 9, wherein the processing unit is configured to receive an input signal representing exposure process data, and wherein the processing unit is configured to determine the positions of the one or more defect target areas based on the exposure process data.

[0144] 12. A particle beam apparatus according to any of the preceding clauses, wherein a defect is a structure or feature of the patterned resist layer having a size outside a predetermined range.

[0145] 13. The particle beam apparatus according to clause 12, wherein the processing unit is configured to control the particle beam source to repair the one or more defects by applying a particle beam to the defects to modify the size to a modified size within the predetermined range.

[0146] 14. The particle beam apparatus of clause 13, wherein the step of modifying the dimension involves shrinking of a resist of the patterned resist layer.

[0147] 15. A defect repair method, comprising:

[0148] - receiving a substrate comprising a patterned resist layer;

[0149] - receiving or determining the location of one or more defect target areas on the substrate;

[0150] - inspecting the one or more defect target areas of the patterned resist layer;

[0151] - determining the location of one or more defects in the one or more defect target areas based on the inspection;

[0152] - modifying the patterned resist layer at the one or more defects to repair the defects.

[0153] 16. The method of clause 15, wherein the step of inspecting the one or more defect target areas comprises scanning the one or more defect target areas with a particle beam.

[0154] 17. The method of clause 15 or 16, wherein the step of modifying the patterned resist layer at the one or more defects comprises exposing the one or more defects to a particle beam.

[0155] 18. The method according to any one of clauses 15 to 17, wherein the particle beam comprises an electron beam.

[0156] 19. A photolithography exposure process, comprising:

[0157] - patterning the resist layer of the substrate by exposing the resist layer to a patterned radiation beam;

[0158] - logging or recording exposure process data during said exposure of said resist layer;

[0159] - determining the location of one or more defect target areas based on the exposure process data;

[0160] - inspecting the one or more defect target areas, thereby identifying one or more defects in the one or more defect target areas;

[0161] - modifying the patterned resist layer at the one or more defects to repair the defects.

[0162] 20. The lithographic exposure process of clause 19, wherein the step of inspecting the one or more defect target areas comprises scanning the one or more target areas with a particle beam.

[0163] 21. The lithographic exposure process of clause 19 or 20, wherein the step of modifying the patterned resist layer at the one or more defects comprises exposing the one or more defects to a particle beam.

[0164] 22. A lithographic exposure process according to any one of clauses 19 to 21, wherein the particle beam comprises an electron beam.

[0165] 23. A lithography system configured to perform a lithography exposure process according to any one of clauses 19 to 22.

[0166] Although specific reference may be made herein to the use of lithographic equipment in the manufacture of ICs, it should be understood that the lithographic equipment described herein may have other applications, such as the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, flat panel displays, liquid crystal displays (LCDs), thin film heads, and the like. Those skilled in the art will understand that in the context of such alternative applications, any use of the term "wafer" or "die" herein is considered to be a synonym for the more general term "substrate" or "target portion", respectively. The substrate referred to herein may be processed before or after exposure, such as in a track (a tool that typically applies a layer of resist on a substrate and develops the exposed resist), a metrology tool, and / or an inspection tool. Where applicable, the disclosure herein may be applied to such and other substrate processing tools. In addition, a substrate may be processed more than once, for example, to manufacture a multi-layer IC, so the term "substrate" used herein may also refer to a substrate that already contains multiple processed layers.

[0167] Although specific reference has been made above to the use of embodiments of the invention in the context of optical lithography, it will be appreciated that the invention may be used in other applications, such as imprint lithography, and is not limited to optical lithography where the context permits. In imprint lithography, the topography in the patterning device defines the pattern produced on the substrate. The topography of the patterning device may be pressed into a layer of resist provided to the substrate, and the resist is then cured by applying electromagnetic radiation, heat, pressure, or a combination thereof. After the resist has cured, the patterning device is removed from the resist, leaving a pattern therein.

[0168] As used herein, the terms "radiation" and "beam" encompass all types of electromagnetic radiation, including ultraviolet (UV) radiation (e.g., having a wavelength of or about 365, 248, 193, 157, or 126 nm) and extreme ultraviolet (EUV) radiation (e.g., having a wavelength in the range of 5 to 20 nm), as well as particle beams (such as ion beams or electron beams).

[0169] The term "lens," where the context permits, may refer to any one or combination of various types of optical components, including refractive, reflective, magnetic, electromagnetic, and electrostatic optical components.

[0170] Although specific embodiments of the present invention have been described above, it should be understood that the present invention may be practiced in a manner other than that described. For example, the present invention may take the following forms: a computer program comprising one or more machine-readable instruction sequences describing the methods described above; or a data storage medium (e.g., a semiconductor memory, a magnetic disk, or an optical disk) in which such a computer program is stored.

[0171] The above description is intended to be illustrative rather than limiting. It will therefore be apparent to those skilled in the art that modifications may be made to the invention as described without departing from the scope of the claims set forth below.

Claims

1. A particle beam device, comprising: - a stage configured to hold a substrate having at least a portion of a semiconductor device and / or a resist layer; - a particle beam source configured to generate a particle beam; - a detector configured to detect a response of the substrate caused by the interaction of the particle beam with the substrate and to output a detector signal representative of the response; as well as - a processing unit, configured to: receiving or determining locations of one or more defect target areas on the substrate; controlling the particle beam source to inspect the one or more defect target areas; identifying one or more defects within the one or more defect target areas based on the detector signals acquired during the inspection of the one or more defect target areas; as well as The particle beam source is controlled to repair the one or more defects. 2 . The particle beam apparatus of claim 1 , wherein the particle beam source comprises a beam deflector configured to direct the particle beam onto the substrate. 3 . The particle beam apparatus according to claim 1 , wherein the processing unit is configured to control the intensity of the particle beam.

4. The particle beam device according to claim 3, wherein the processing unit is configured to control the particle beam source to inspect the one or more defect target areas with a particle beam having a first intensity, and control the particle beam source to repair the one or more defects with a particle beam having a second intensity, wherein the second intensity is higher than the first intensity.

5. The particle beam apparatus of claim 1, wherein the particle beam source comprises an electron beam source. The particle beam device according to claim 1 , wherein the particle beam source comprises a first particle beam source and a second particle beam source. 7 . The particle beam apparatus according to claim 6 , wherein the first particle beam source comprises an electron beam source, and the second particle beam source comprises an ion beam source. 8 . The particle beam apparatus of claim 6 , wherein the first particle beam source comprises a first electron beam source, and the second particle beam source comprises a second electron beam source. 9 . The particle beam apparatus according to claim 6 , wherein the processing unit is configured to control the first particle beam source to inspect the one or more defect target areas, and control the second particle beam source to repair the one or more defects.

10. The particle beam apparatus of claim 1, wherein the processing unit is configured to receive an input signal representing the location of the one or more defect target regions. 11 . The particle beam apparatus according to claim 1 , wherein the processing unit is configured to receive an input signal representing exposure process data, and wherein the processing unit is configured to determine the positions of the one or more defect target regions based on the exposure process data. 12 . The particle beam apparatus of claim 1 , wherein the defect is a structure or feature of the patterned resist layer having a size outside a predetermined range. 13 . The particle beam apparatus according to claim 12 , wherein the processing unit is configured to control the particle beam source to repair the one or more defects by applying a particle beam to the one or more defects to modify the size to a modified size within the predetermined range.

14. A defect repair method, comprising: - receiving a substrate comprising a patterned resist layer; - receiving or determining the location of one or more defect target areas on the substrate; - inspecting the one or more defect target areas of the patterned resist layer; - based on said inspection, determining the location of one or more defects in said one or more defect target areas; as well as - modifying the patterned resist layer at the one or more defects to repair the defects.

15. The method of claim 14, wherein the step of inspecting the one or more defect target areas comprises scanning the one or more defect target areas with a particle beam, and / or wherein modifying the patterned resist layer at the one or more defects comprises exposing the one or more defects to a particle beam.

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